CN114855142B - A kind of parylene material with low surface energy and preparation method thereof - Google Patents
A kind of parylene material with low surface energy and preparation method thereof Download PDFInfo
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- 229920000052 poly(p-xylylene) Polymers 0.000 title claims abstract description 71
- 239000000463 material Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 51
- 230000008020 evaporation Effects 0.000 claims abstract description 49
- 239000002994 raw material Substances 0.000 claims abstract description 44
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 25
- 239000011737 fluorine Substances 0.000 claims abstract description 25
- 238000005336 cracking Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 12
- UVWPNDVAQBNQBG-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,9-icosafluorononane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F UVWPNDVAQBNQBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000010702 perfluoropolyether Substances 0.000 claims description 4
- FIAHOPQKBBASOY-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-henicosafluorododecyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCOC(=O)C=C FIAHOPQKBBASOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- BPHQIXJDBIHMLT-UHFFFAOYSA-N perfluorodecane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BPHQIXJDBIHMLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- LFNVRNWBMJBTKZ-UHFFFAOYSA-N 1-fluorohexan-1-ol Chemical compound CCCCCC(O)F LFNVRNWBMJBTKZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N propionic acid ethyl ester Natural products CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000003075 superhydrophobic effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 11
- 239000002585 base Substances 0.000 description 6
- 238000001291 vacuum drying Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OOLUVSIJOMLOCB-UHFFFAOYSA-N 1633-22-3 Chemical compound C1CC(C=C2)=CC=C2CCC2=CC=C1C=C2 OOLUVSIJOMLOCB-UHFFFAOYSA-N 0.000 description 1
- NRKYWOKHZRQRJR-UHFFFAOYSA-N 2,2,2-trifluoroacetamide Chemical compound NC(=O)C(F)(F)F NRKYWOKHZRQRJR-UHFFFAOYSA-N 0.000 description 1
- -1 2,2,2-trifluoroethyl trifluoroethyl ester Chemical class 0.000 description 1
- XZJPYETUABEQFI-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluorooctane-1,8-diol Chemical compound OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CO XZJPYETUABEQFI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
技术领域technical field
本发明涉及功能材料表面技术领域,具体涉及一种低表面能的派瑞林材料及其制备方法。The invention relates to the technical field of functional material surfaces, in particular to a parylene material with low surface energy and a preparation method thereof.
背景技术Background technique
派瑞林(Parylene)是六十年代中期美国UnionCarbide Co.开发应用的一种新型敷形涂层材料,它是一种对二甲苯的聚合物,根据分子结构的不同,派瑞林可分为N型、C型、D型、F型、HT型等多种类型。派瑞林是一种保护性高分子材料,中文名,聚对二甲苯,派瑞林它可在真空下气相沉积,派瑞林活性分子的良好穿透力能在电子元件内部、底部,周围形成无针孔,厚度均匀的透明绝缘涂层,给元件提供一个完整的优质防护涂层,抵御酸碱、盐雾、霉菌及各种腐蚀性气件的侵害。Parylene is a new type of conformal coating material developed and applied by Union Carbide Co. in the United States in the mid-1960s. It is a polymer of p-xylene. According to different molecular structures, Parylene can be divided into N type, C type, D type, F type, HT type and other types. Parylene is a protective polymer material. Its Chinese name is parylene. Parylene can be vapor-deposited under vacuum. The good penetrating power of the active molecules of Parylene can form a pinhole-free transparent insulating coating with uniform thickness on the inside, bottom and surrounding of electronic components, providing a complete high-quality protective coating for components to resist acid, alkali, salt spray, mold and various corrosive gases.
但是,现有的派瑞林材料表面能较高,存在应用场景受限等不足之处。However, the existing parylene materials have high surface energy and have shortcomings such as limited application scenarios.
发明内容Contents of the invention
本发明提供一种低表面能的派瑞林材料及其制备方法,基于现有的派瑞林材料,在保持其原有的优异物理化学性能的同时,降低其表面能,结合带有微纳米结构的基材,使得被镀膜表面达到超疏水状态,实现在某些特定工作条件下自清洁的特性。The invention provides a parylene material with low surface energy and a preparation method thereof. Based on the existing parylene material, while maintaining its original excellent physical and chemical properties, its surface energy is reduced, combined with a substrate with a micro-nano structure, so that the surface of the coated film reaches a super-hydrophobic state, and realizes the self-cleaning characteristic under certain specific working conditions.
本发明所要解决的技术问题是通过如下技术方案实现的:The technical problem to be solved by the present invention is achieved through the following technical solutions:
本发明提供一种低表面能的派瑞林材料,由派瑞林原料和含氟试剂经化学气相沉积形成。The invention provides a parylene material with low surface energy, which is formed by chemical vapor deposition of parylene raw materials and fluorine-containing reagents.
优选的,所述含氟试剂包括2,2,3,3,4,4,5,5,6,6,7,7-十二氟-1,8-辛二醇、3,3,3-三氟丙酸乙酯、九碳全氟聚醚硅氧烷、2,2,2-三氟乙基三氟乙酯、全氟聚醚、2,2,2-三氟乙酰胺、全氟壬烷、全氟癸基乙基丙烯酸酯、十一氟正己烷-1-醇、全氟癸烷。Preferably, the fluorine-containing reagents include 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoro-1,8-octanediol, 3,3,3-trifluoroethyl propionate, nine-carbon perfluoropolyether siloxane, 2,2,2-trifluoroethyl trifluoroethyl ester, perfluoropolyether, 2,2,2-trifluoroacetamide, perfluorononane, perfluorodecyl ethyl acrylate, undecafluoron-hexane-1-ol, Perfluorodecane.
优选的,所述派瑞林原料的蒸发温度和所述含氟试剂的蒸发温度的差值小于或等于25℃。Preferably, the difference between the evaporation temperature of the parylene raw material and the evaporation temperature of the fluorine-containing reagent is less than or equal to 25°C.
优选的,所述派瑞林原料的蒸发温度和所述含氟试剂的蒸发温度的差值为0℃~25℃。Preferably, the difference between the evaporation temperature of the parylene raw material and the evaporation temperature of the fluorine-containing reagent is 0°C to 25°C.
优选的,所述含氟试剂的裂解温度低于700℃。Preferably, the cracking temperature of the fluorine-containing reagent is lower than 700°C.
一种低表面能的派瑞林材料的制备方法,包括以下步骤:A kind of preparation method of the parylene material of low surface energy, comprises the following steps:
步骤1、将派瑞林原料和含氟试剂放入蒸发室;Step 1. Put the parylene raw material and fluorine-containing reagent into the evaporation chamber;
步骤2、给整个反应装置抽真空,保证反应在真空条件下发生;Step 2, vacuumize the whole reaction device to ensure that the reaction takes place under vacuum conditions;
步骤3、先使裂解炉的温度升到690℃或650℃,再将蒸发室温度升到175℃;Step 3, first raise the temperature of the cracking furnace to 690°C or 650°C, and then raise the temperature of the evaporation chamber to 175°C;
步骤4、原料反应后在室温的腔室内的基材上沉积成膜。Step 4, after the reaction of the raw materials, deposit and form a film on the substrate in the chamber at room temperature.
优选的,在所述步骤1中,如果派瑞林原料与含氟试剂的蒸发温度相差>10℃,则瑞林原料与含氟试剂应当分开放置进入蒸发室;如果派瑞林原料与含氟试剂的蒸发温度相差<10℃,派瑞林原料与含氟试剂可以混合放入蒸发室。Preferably, in step 1, if the difference between the evaporation temperatures of the parylene raw material and the fluorine-containing reagent is >10°C, then the parylene raw material and the fluorine-containing reagent should be placed separately into the evaporation chamber; if the difference between the evaporation temperatures of the parylene raw material and the fluorine-containing reagent is <10°C, the parylene raw material and the fluorine-containing reagent can be mixed and put into the evaporation chamber.
优选的,所述基材可以采用任何材料。Preferably, the base material can be any material.
优选的,如果所述基材采用金属基板,需做增强黏附性能的处理。Preferably, if the base material is a metal substrate, it needs to be treated to enhance the adhesion performance.
优选的,在所述步骤4中未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。Preferably, the raw material that cannot be deposited in step 4 passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump.
本发明的有益效果在于:The beneficial effects of the present invention are:
1、本发明的低表面能的派瑞林材料具有较高的接触角和优异的物理化学性质,比如较高的介电常数和较好的机械性能;1. The parylene material with low surface energy of the present invention has higher contact angle and excellent physical and chemical properties, such as higher dielectric constant and better mechanical properties;
2、本发明的低表面能的派瑞林材料基于其体性质而具有持久性,性能稳定;2. The parylene material with low surface energy of the present invention has persistence and stable performance based on its bulk properties;
3、本发明的低表面能的派瑞林材料具有多种可调控因素,可灵活地适应不同应用场景的需求;3. The low surface energy parylene material of the present invention has a variety of adjustable factors, which can be flexibly adapted to the needs of different application scenarios;
4、本发明的低表面能的派瑞林材料制备方法简单,可选择的原料范围广泛,成本较低,有利于大规模生产。4. The low surface energy parylene material of the present invention has a simple preparation method, a wide range of raw materials to choose from, and low cost, which is conducive to large-scale production.
附图说明Description of drawings
图1是本发明的低表面能的派瑞林材料制备方法示意图;Fig. 1 is the schematic diagram of the preparation method of parylene material of low surface energy of the present invention;
图2是本发明实施例5的低表面能的派瑞林材料截面为多孔结构;Fig. 2 is that the parylene material section of the low surface energy of the embodiment of the present invention 5 is a porous structure;
图3是本发明的低表面能的派瑞林材料样品接触角测试实验结果;Fig. 3 is the parylene material sample contact angle test result of low surface energy of the present invention;
图4是本发明的低表面能的派瑞林材料样品机械性能测试实验结果。Fig. 4 is the experimental result of the mechanical property test of the parylene material sample with low surface energy of the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
图1是本发明的低表面能的派瑞林材料制备方法示意图。本发明的低表面能的派瑞林材料可通过以下方法制成,可根据派瑞林材料的不同以及含氟试剂的不同等因素调整具体方法。以下以派瑞林C为基础材料为例,给出具体方法。以其他基础材料制备的过程可参照进行。Fig. 1 is a schematic diagram of the preparation method of the low surface energy parylene material of the present invention. The low surface energy parylene material of the present invention can be prepared by the following method, and the specific method can be adjusted according to factors such as different parylene materials and different fluorine-containing reagents. Taking parylene C as the basic material as an example, the specific method is given below. The process of preparing with other basic materials can be referred to.
制备方法:CVD化学气相沉积Preparation method: CVD chemical vapor deposition
步骤1:将派瑞林C原料和含氟试剂一同放入蒸发室;Step 1: Put the parylene C raw material and the fluorine-containing reagent into the evaporation chamber together;
步骤2:给整个反应装置抽真空,保证反应在真空条件下发生;Step 2: Vacuumize the entire reaction device to ensure that the reaction takes place under vacuum conditions;
步骤3:先使裂解炉的温度升到690℃,再将蒸发室温度升到175℃。Step 3: first raise the temperature of the cracking furnace to 690°C, and then raise the temperature of the evaporation chamber to 175°C.
步骤4:原料反应后在室温的腔室内沉积成膜。Step 4: Deposit and form a film in a chamber at room temperature after the raw materials are reacted.
下面将结合实施例对本公开的实施方案进行详细描述,但是本领域技术人员将会理解,下列实施例仅用于说明本公开,而不应视为对本公开的范围的限定。以下实施例中所使用的派瑞林为美国生产的Dichloro-p-cyclophane和Di-p-xylene[2,2]paracyclophane。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市购获得的常规产品。Embodiments of the present disclosure will be described in detail below in conjunction with examples, but those skilled in the art will understand that the following examples are only for illustrating the present disclosure, and should not be regarded as limiting the scope of the present disclosure. The parylene used in the following examples is Dichloro-p-cyclophane and Di-p-xylene[2,2]paracyclophane produced in the United States. Those who do not indicate the specific conditions in the examples are carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used were not indicated by the manufacturer, and they were all commercially available conventional products.
实施例1Example 1
将派瑞林C原料从真空干燥罐中取出,称量所需的重量放入蒸发室。待裂解室加热到690℃后,蒸发室加热到175℃,派瑞林C原料经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为一般玻璃片。Take out the parylene C raw material from the vacuum drying tank, weigh the required weight and put it into the evaporation chamber. After the cracking chamber is heated to 690°C, the evaporation chamber is heated to 175°C. After evaporation, the parylene C raw material undergoes a chemical reaction in the cracking chamber, and then deposits on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The base material is a general glass sheet.
实施例2Example 2
将派瑞林N原料从真空干燥罐中取出,称量所需的重量放入蒸发室。待裂解室加热到650℃后,蒸发室加热到175℃,派瑞林N原料经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为一般玻璃片。Take out the parylene N raw material from the vacuum drying tank, weigh the required weight and put it into the evaporation chamber. After the cracking chamber is heated to 650°C, the evaporation chamber is heated to 175°C. The parylene N raw material reacts chemically in the cracking chamber after being evaporated, and then deposits on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The base material is a general glass sheet.
实施例3Example 3
将派瑞林C原料从真空干燥罐中取出,称量所需的重量;按一定质量与体积比称取全氟壬烷。若两种原料蒸发温度差值小于10℃,可混合放入蒸发室;若两种原料蒸发温度差值大于10℃,需分开放入蒸发室。待裂解室加热到690℃后,蒸发室加热到175℃,派瑞林C与含氟试剂经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为一般玻璃片。Take out the parylene C raw material from the vacuum drying tank, weigh the required weight; weigh perfluorononane according to a certain mass-to-volume ratio. If the difference in evaporation temperature of the two raw materials is less than 10°C, they can be mixed and placed in the evaporation chamber; if the difference in evaporation temperature of the two raw materials is greater than 10°C, they need to be placed in the evaporation chamber separately. After the cracking chamber is heated to 690°C, the evaporation chamber is heated to 175°C. Parylene C and the fluorine-containing reagent undergo a chemical reaction in the cracking chamber after evaporation, and then deposit on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The base material is a general glass sheet.
实施例4Example 4
将派瑞林N原料从真空干燥罐中取出,称量所需的重量;按一定质量与体积比称取全氟壬烷。若两种原料蒸发温度差值小于10℃,可混合放入蒸发室;若两种原料蒸发温度差值大于10℃,需分开放入蒸发室。待裂解室加热到650℃后,蒸发室加热到175℃,派瑞林N与含氟试剂经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为一般玻璃片。Take out the parylene N raw material from the vacuum drying tank, and weigh the required weight; weigh perfluorononane according to a certain mass-to-volume ratio. If the difference in evaporation temperature of the two raw materials is less than 10°C, they can be mixed and placed in the evaporation chamber; if the difference in evaporation temperature of the two raw materials is greater than 10°C, they need to be placed in the evaporation chamber separately. After the cracking chamber is heated to 650°C, the evaporation chamber is heated to 175°C. Parylene N and the fluorine-containing reagent undergo a chemical reaction in the cracking chamber after evaporation, and then deposit on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The base material is a general glass sheet.
实施例5Example 5
将派瑞林C原料从真空干燥罐中取出,称量所需的重量;按一定质量与体积比称取全氟壬烷。若两种原料蒸发温度差值小于10℃,可混合放入蒸发室;若两种原料蒸发温度差值大于10℃,需分开放入蒸发室。待裂解室加热到690℃后,蒸发室加热到175℃,派瑞林C与含氟试剂经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为带纳米结构的硅片/PDMS。Take out the parylene C raw material from the vacuum drying tank, weigh the required weight; weigh perfluorononane according to a certain mass-to-volume ratio. If the difference in evaporation temperature of the two raw materials is less than 10°C, they can be mixed and placed in the evaporation chamber; if the difference in evaporation temperature of the two raw materials is greater than 10°C, they need to be placed in the evaporation chamber separately. After the cracking chamber is heated to 690°C, the evaporation chamber is heated to 175°C. Parylene C and the fluorine-containing reagent undergo a chemical reaction in the cracking chamber after evaporation, and then deposit on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The substrate is silicon wafer/PDMS with nanostructures.
实施例6Example 6
将派瑞林N原料从真空干燥罐中取出,称量所需的重量;按一定质量与体积比称取全氟壬烷。若两种原料蒸发温度差值小于10℃,可混合放入蒸发室;若两种原料蒸发温度差值大于10℃,需分开放入蒸发室。待裂解室加热到650℃后,蒸发室加热到175℃,派瑞林N与含氟试剂经蒸发后在裂解室发生化学反应,随后在室温的腔室中沉积在基材上成膜,未能沉积的原料经过冷井黏附在低温的冷井棒上,防止进入真空泵。基材为带纳米结构的硅片/PDMS。Take out the parylene N raw material from the vacuum drying tank, and weigh the required weight; weigh perfluorononane according to a certain mass-to-volume ratio. If the difference in evaporation temperature of the two raw materials is less than 10°C, they can be mixed and placed in the evaporation chamber; if the difference in evaporation temperature of the two raw materials is greater than 10°C, they need to be placed in the evaporation chamber separately. After the cracking chamber is heated to 650°C, the evaporation chamber is heated to 175°C. Parylene N and the fluorine-containing reagent undergo a chemical reaction in the cracking chamber after evaporation, and then deposit on the substrate in a chamber at room temperature to form a film. The undeposited raw material passes through the cold well and adheres to the low-temperature cold well rod to prevent it from entering the vacuum pump. The substrate is silicon wafer/PDMS with nanostructures.
图2是本发明实施例5的低表面能的派瑞林材料截面为多孔结构。本发明提供的低表面能的派瑞林材料平整致密,截面为多孔结构。在保持原有派瑞林材料优异的物理化学性能的同时降低了表面能,接触角大幅提高。Fig. 2 is a cross section of the low surface energy parylene material of Example 5 of the present invention with a porous structure. The parylene material with low surface energy provided by the invention is flat and dense, and has a porous structure in cross section. While maintaining the excellent physical and chemical properties of the original parylene material, the surface energy is reduced, and the contact angle is greatly increased.
图3是本发明的低表面能的派瑞林材料样品接触角测试实验结果。取实施例1-6制备的样品,依次编号为样品S1-S6,进行接触角实验测试。Fig. 3 is the experimental result of the contact angle test of the low surface energy parylene material sample of the present invention. The samples prepared in Examples 1-6 were taken, numbered as samples S1-S6 in sequence, and subjected to the contact angle test.
对比6组样品接触角实验数据:Comparing the experimental data of contact angle of 6 groups of samples:
样品S1:无结构的改性前派瑞林C薄膜(实施例1制备的样品);Sample S1: unstructured parylene C film (the sample prepared in Example 1) before modification;
样品S2:无结构的改性前派瑞林N薄膜(实施例2制备的样品);Sample S2: unstructured parylene N thin film (the sample prepared in Example 2) before modification;
样品S3:无结构的改性后派瑞林C薄膜(实施例3制备的样品);Sample S3: Parylene C thin film (the sample prepared in embodiment 3) after modification without structure;
样品S4:无结构的改性后派瑞林N薄膜(实施例4制备的样品);Sample S4: Parylene N thin film (sample prepared in Example 4) after modification without structure;
样品S5:覆盖在纳米结构上的改性后派瑞林C薄膜(实施例5制备的样品);Sample S5: the modified Parylene C film (the sample prepared in Example 5) covered on the nanostructure;
样品S6:覆盖在纳米结构上的改性后派瑞林N薄膜(实施例6制备的样品);Sample S6: the modified Parylene N film (the sample prepared in Example 6) covered on the nanostructure;
取实施例1-4制备的样品,依次编号为样品S1-S4,测试其介电常数及其机械性能,统计数据见下列表1及图4:Get the samples prepared in Examples 1-4, numbered as samples S1-S4 in sequence, and test their dielectric constant and mechanical properties. The statistical data are shown in Table 1 and Fig. 4 below:
表1样品S1-S4介电常数实验结果Table 1 Sample S1-S4 Dielectric Constant Experimental Results
由此可见,相比于原始派瑞林原料,改性后的派瑞林材料不仅具有更低的表面能,其介电常数有所降低,并且机械性能也有一定的提高。It can be seen that compared with the original parylene raw material, the modified parylene material not only has lower surface energy, but also has a lower dielectric constant and improved mechanical properties.
虽然已经参考优选实施例详细地示出和描述了本发明的特征,但是本领域技术人员将理解,在不脱离本发明的范围的精神的情况下,可以在其中进行其他改变。同样地,各种图可以描绘用于本公开的示例性架构或其他配置,其用于理解可以包括在本公开中的特征和功能。本公开不限于所示出的示例架构或配置,而是可以使用各种替代架构和配置来实现。另外,尽管以上根据各种示例性实施例和实现描述了本公开,但是应当理解,在一个或多个单独实施例中描述的各种特征和功能不限于它们对于它们所属的特定实施例的适用性的描述。相反,它们可以单独地或以某种组合方式应用于本公开的一个或多个其他实施例,无论是否描述了这样的实施例,以及这些特征是否被呈现为所描述的实施例的一部分。因此,本公开的广度和范围不应受任何上述示例性实施例的限制。While features of the present invention have been shown and described in detail with reference to a preferred embodiment, it will be understood by those skilled in the art that other changes may be made therein without departing from the spirit and scope of the invention. Likewise, the various diagrams may depict exemplary architectures or other configurations for the present disclosure, which are used to understand the features and functions that may be included in the present disclosure. The present disclosure is not limited to the illustrated example architectures or configurations, but can be implemented using various alternative architectures and configurations. In addition, while the present disclosure has been described above in terms of various exemplary embodiments and implementations, it should be understood that various features and functions described in one or more individual embodiments are not limited to their description as to their applicability to the particular embodiment to which they pertain. Rather, they may be applied to one or more other embodiments of the present disclosure, whether or not such embodiments are described, and whether these features are presented as part of a described embodiment, alone or in some combination. Thus, the breadth and scope of the present disclosure should not be limited by any of the above-described exemplary embodiments.
图4是本发明的低表面能的派瑞林材料样品机械性能测试实验结果。Fig. 4 is the experimental result of the mechanical property test of the parylene material sample with low surface energy of the present invention.
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