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CN115079524A - Preparation method of driving substrate - Google Patents

Preparation method of driving substrate Download PDF

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Publication number
CN115079524A
CN115079524A CN202210792254.6A CN202210792254A CN115079524A CN 115079524 A CN115079524 A CN 115079524A CN 202210792254 A CN202210792254 A CN 202210792254A CN 115079524 A CN115079524 A CN 115079524A
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exposure
reference scale
layer
area
splicing
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汤帅
李烨操
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Suzhou China Star Optoelectronics Technology Co Ltd
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Suzhou China Star Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本申请实施例公开了一种驱动基板的制备方法,本申请实施例的驱动基板的制备方法在拼接曝光过程中,同层设置的第一曝光层和第二曝光层重叠形成第一拼接区域,并将第一基准标尺、第二基准标尺以及和第三基准标尺均设置在第一拼接区域外侧,且第一基准标尺、第二基准标尺以及和第三基准标尺均是由单次曝光形成,以有效避免因多次曝光而导致基准标尺本身存在误差的影响。而后续同层设置的第三曝光层和第四曝光层在曝光对位中均会使用第二基准标尺进行对位,如此通过在曝光同层时采用同一组基准标尺,如此有效避免了因采用不同基准标尺而导致位置偏差的影响。进而在曝光工艺制程中,提升第二层重叠曝光区域的对位性能,改善重叠曝光区的拼接精度。

Figure 202210792254

The embodiment of the present application discloses a method for preparing a driving substrate. In the method for preparing a driving substrate according to the embodiment of the present application, during the splicing exposure process, a first exposure layer and a second exposure layer disposed on the same layer overlap to form a first splicing area, The first reference scale, the second reference scale and the third reference scale are all arranged outside the first splicing area, and the first reference scale, the second reference scale and the third reference scale are all formed by a single exposure, In order to effectively avoid the influence of errors in the reference scale itself caused by multiple exposures. The third exposure layer and the fourth exposure layer set in the same layer will use the second reference scale for alignment during exposure alignment, so by using the same set of reference scales when exposing the same layer, this effectively avoids the use of The influence of positional deviation caused by different datum scales. Furthermore, in the exposure process, the alignment performance of the overlapping exposure areas of the second layer is improved, and the splicing accuracy of the overlapping exposure areas is improved.

Figure 202210792254

Description

驱动基板的制备方法Preparation method of driving substrate

技术领域technical field

本申请涉及拼接曝光对位方法领域,具体涉及一种驱动基板的制备方法。The present application relates to the field of splicing exposure alignment methods, in particular to a method for preparing a driving substrate.

背景技术Background technique

随着半导体显示制造技术的不断发展,人们对显示尺寸的要求也越来越高,更大尺寸的电视逐渐进入了普通家庭。为了提升自身竞争力,面板制造厂商必须开发在低世代产线生产大尺寸面板的技术。受限于低世代产线曝光机掩模版分辨率保证区大小,在不更换曝光设备的基础上制作大尺寸面板,只能采用拼接曝光的方式,即一个面板需要多次曝光。With the continuous development of semiconductor display manufacturing technology, people have higher and higher requirements for display size, and larger-sized TVs have gradually entered ordinary households. In order to enhance their competitiveness, panel makers must develop technologies to produce large-size panels in low-generation production lines. Limited by the size of the reticle resolution guarantee area of the low-generation production line exposure machine, to make large-size panels without replacing the exposure equipment, only the method of splicing exposure can be used, that is, a panel needs to be exposed multiple times.

在对现有技术的研究和实践过程中,本申请的发明人发现,在现有的曝光工艺中,第一层电路图案在空白的基板上进行曝光,其电路图案的位置精度由曝光设备本身的精度决定。同时第一层曝光也会形成对位标尺图案,作为后续各层曝光对位的基准,对位标尺的绝对位置准确性是影响后续层电路图案位置精度的首要因素。对于拼接曝光工艺,其拼接曝光的位置精度要求更高,因此拼接区域的对位更为重要。目前拼接曝光工艺对位方案主要分为两种,第一种是后续层对位使用非拼接区域AA的标尺,如图1所示。第二种是后续层拼接区域对位使用第一层拼接区域的标尺,如图2所示。其中,第一种对位方案存在技术缺陷是对于第二层电路拼接曝光区aa而言,由于其对位标尺分别是两次曝光制作而成,对位标尺本身的位置与尺寸存在偏差,这种偏差无法消除,直接影响第二层电路的拼接曝光精度。而第二种对位方案存在技术缺陷是由于共用的基准标尺A1是第一电路层重叠曝光形成,其本身的位置与尺寸精度会受到重叠曝光的影响,对第二电路层重叠曝光区aa的拼接精度造成一定的影响。因此,现有的制备方法中均由于基准标尺的位置及尺寸差异而影响拼接产品第二层及以后的重叠曝光区的拼接精度。During the research and practice of the prior art, the inventors of the present application found that, in the prior exposure process, the first layer of circuit patterns are exposed on a blank substrate, and the positional accuracy of the circuit patterns is determined by the exposure equipment itself accuracy is determined. At the same time, the exposure of the first layer will also form an alignment scale pattern, which is used as the benchmark for the alignment of subsequent layers of exposure. The absolute position accuracy of the alignment scale is the primary factor affecting the position accuracy of the circuit pattern of the subsequent layers. For the stitching exposure process, the positional accuracy of the stitching exposure is required to be higher, so the alignment of the stitching area is more important. At present, the alignment schemes of the splicing exposure process are mainly divided into two types. The first is to use the ruler of the non-splicing area AA for the alignment of the subsequent layers, as shown in FIG. 1 . The second is to use the ruler of the first layer splicing area for alignment of the subsequent layer splicing area, as shown in Figure 2. Among them, the technical defect of the first alignment scheme is that for the exposure area aa of the second layer of circuit splicing, since the alignment scales are made by two exposures respectively, the position and size of the alignment scales themselves are deviated. This kind of deviation cannot be eliminated, which directly affects the splicing exposure accuracy of the second-layer circuit. The second alignment scheme has technical defects because the shared reference scale A1 is formed by overlapping exposure of the first circuit layer, and its position and size accuracy will be affected by the overlapping exposure. The splicing accuracy has a certain impact. Therefore, in the existing preparation methods, the splicing accuracy of the second layer and subsequent overlapping exposure areas of the spliced product is affected due to the difference in the position and size of the reference scale.

发明内容SUMMARY OF THE INVENTION

本申请实施例提供一种驱动基板的制备方法,可以在拼接曝光产品曝光工艺制程中,提升第二层重叠曝光区域的对位性能,改善重叠曝光区的拼接精度。The embodiment of the present application provides a method for preparing a driving substrate, which can improve the alignment performance of the overlapping exposure area of the second layer and improve the splicing accuracy of the overlapping exposure area during the exposure process of the splicing exposure product.

本申请实施例提供一种驱动基板的制备方法,包括:An embodiment of the present application provides a method for preparing a driving substrate, including:

S1:提供一玻璃基板,通过第一掩模板与所述玻璃基板对位,以在所述玻璃基板上界定第一曝光区域,在所述玻璃基板的第一曝光区域形成第一曝光层,所述第一曝光层包括第一基准标尺;S1: Provide a glass substrate, which is aligned with the glass substrate through a first mask, so as to define a first exposure area on the glass substrate, and form a first exposure layer in the first exposure area of the glass substrate. the first exposure layer includes a first reference scale;

S2:通过第二掩模板与所述玻璃基板对位,以在所述玻璃基板上界定第二曝光区域,所述第二曝光区域与所述第一曝光区域部分重叠设置以形成为第一拼接区域,在所述玻璃基板的所述第二曝光区域形成与所述第一曝光层同层设置的第二曝光层,所述第二曝光层包括第二基准标尺和第三基准标尺,所述第一基准标尺、所述第二基准标尺以及和第三基准标尺同时位于所述第一拼接区域的外侧,且所述第二基准标尺位于所述第一基准标尺和所述第三基准标尺之间;S2: Aligning the glass substrate with a second mask to define a second exposure area on the glass substrate, and the second exposure area and the first exposure area are partially overlapped to form a first splicing In the second exposure area of the glass substrate, a second exposure layer disposed in the same layer as the first exposure layer is formed, the second exposure layer includes a second reference scale and a third reference scale, the The first reference scale, the second reference scale and the third reference scale are located outside the first splicing area at the same time, and the second reference scale is located between the first reference scale and the third reference scale. between;

S3:通过第三掩模板同时与所述第一基准标尺和所述第二基准标尺进行对位后,以在所述玻璃基板上界定第三曝光区域;S3: define a third exposure area on the glass substrate after the third mask plate is aligned with the first reference scale and the second reference scale at the same time;

S4:通过第四掩模板同时与所述第二基准标尺和所述第三基准标尺进行对位后,以在所述玻璃基板上界定第四曝光区域,所述第四曝光区域与所述第三曝光区域部分重叠设置形成第二拼接区域;S4: After aligning with the second reference scale and the third reference scale at the same time through a fourth mask, a fourth exposure area is defined on the glass substrate, and the fourth exposure area is aligned with the first reference scale. The three exposure areas are partially overlapped to form a second splicing area;

S5:通过所述第三掩模板对所述玻璃基板的第三曝光区域进行曝光以形成第三曝光层,所述第三曝光层位于所述第一曝光层的上方,通过所述第四掩模板对所述玻璃基板的第四曝光区域进行曝光以形成与所述第三曝光层同层设置的第四曝光层。S5: Expose the third exposure region of the glass substrate through the third mask to form a third exposure layer, the third exposure layer is located above the first exposure layer, and the fourth exposure layer is passed through the fourth mask. The template exposes the fourth exposure area of the glass substrate to form a fourth exposure layer disposed in the same layer as the third exposure layer.

可选的,在本申请的一些实施例中,所述第二基准标尺位于所述第二拼接区域内。Optionally, in some embodiments of the present application, the second reference scale is located in the second splicing area.

可选的,在本申请的一些实施例中,所述第二基准标尺位于所述玻璃基板的中部。Optionally, in some embodiments of the present application, the second reference scale is located in the middle of the glass substrate.

可选的,在本申请的一些实施例中,所述第二基准标尺设有多个,多个所述第二基准标尺沿所述第二拼接区域的长度延伸方向间隔排列。Optionally, in some embodiments of the present application, a plurality of the second reference scales are provided, and the plurality of the second reference scales are arranged at intervals along the extending direction of the length of the second splicing region.

可选的,在本申请的一些实施例中,所述第二拼接区域的长度延伸方向的两端均设有一所述第二基准标尺。Optionally, in some embodiments of the present application, both ends of the second splicing region in the length extension direction are provided with the second reference scale.

可选的,在本申请的一些实施例中,所述第一基准标尺和所述第三基准标尺均设有多个,多个所述第一基准标尺沿所述第二拼接区域的长度延伸方向间隔排列,多个所述第三基准标尺沿所述第二拼接区域的长度延伸方向间隔排列。Optionally, in some embodiments of the present application, a plurality of the first reference scale and the third reference scale are provided, and the plurality of the first reference scales extend along the length of the second splicing area. The directions are arranged at intervals, and a plurality of the third reference scales are arranged at intervals along the length extension direction of the second splicing area.

可选的,在本申请的一些实施例中,一所述第一基准标尺分别与一所述第二基准标尺和一所述第三基准标尺沿所述第二拼接区域的宽度延伸方向平齐设置。Optionally, in some embodiments of the present application, the first reference scale is respectively flush with the second reference scale and the third reference scale along the width extension direction of the second splicing area. set up.

可选的,在本申请的一些实施例中,所述第一基准标尺位于所述第三曝光区域远离所述第四曝光区域的一侧。Optionally, in some embodiments of the present application, the first reference scale is located on a side of the third exposure area away from the fourth exposure area.

可选的,在本申请的一些实施例中,所述第三基准标尺位于所述第四曝光区域远离所述第三曝光区域的一侧。Optionally, in some embodiments of the present application, the third reference scale is located on a side of the fourth exposure area away from the third exposure area.

可选的,在本申请的一些实施例中,所述的驱动基板的制备方法在所述步骤S5之后还包括:Optionally, in some embodiments of the present application, after the step S5, the method for preparing the driving substrate further includes:

S6:通过第五掩模板同时与所述第一基准标尺和所述第二基准标尺进行对位后,以在所述玻璃基板上界定第五曝光区域;S6: define a fifth exposure area on the glass substrate after aligning with the first reference scale and the second reference scale at the same time through a fifth mask;

S7:通过第六掩模板同时与所述第二基准标尺和所述第三基准标尺进行对位后,以在所述玻璃基板上界定第六曝光区域,所述第六曝光区域与所述第五曝光区域部分重叠设置以形成第三拼接区域,所述第三拼接区域与所述第二拼接区域重合设置;S7: After aligning with the second reference scale and the third reference scale at the same time through the sixth mask, a sixth exposure area is defined on the glass substrate, and the sixth exposure area is aligned with the first reference scale. The five exposure areas are partially overlapped to form a third splicing area, and the third splicing area and the second splicing area are overlapped and arranged;

S8:通过所述第五掩模板对所述玻璃基板的第五曝光区域进行曝光以形成第五曝光层,所述第五曝光层位于所述第三曝光层的上方,通过所述第六掩模板对所述玻璃基板的第六曝光区域进行曝光以形成与所述第五曝光层同层设置的第六曝光层。S8: Expose the fifth exposure area of the glass substrate through the fifth mask to form a fifth exposure layer, the fifth exposure layer is located above the third exposure layer, and the sixth exposure layer is passed through the sixth mask. The template exposes the sixth exposure area of the glass substrate to form a sixth exposure layer disposed in the same layer as the fifth exposure layer.

本申请实施例在拼接曝光过程中,同层设置的第一曝光层和第二曝光层重叠形成第一拼接区域,并将第一基准标尺、第二基准标尺以及和第三基准标尺均设置在第一拼接区域外侧,且第一基准标尺、第二基准标尺以及和第三基准标尺均是由单次曝光形成,以有效避免因多次曝光而导致基准标尺本身存在误差的影响。而后续同层设置的第三曝光层和第四曝光层在曝光对位中均会使用第二基准标尺进行对位,如此通过在曝光同层时采用同一组基准标尺,如此有效避免了因采用不同基准标尺而导致位置偏差的影响。本申请的驱动基板的制备方法可以有效解决由于基准标尺的位置及尺寸差异造成的影响,进而在曝光工艺制程中,提升第二层重叠曝光区域的对位性能,改善重叠曝光区的拼接精度。During the splicing exposure process in the embodiment of the present application, the first exposure layer and the second exposure layer provided on the same layer overlap to form a first splicing area, and the first reference scale, the second reference scale and the third reference scale are all set on the Outside the first splicing area, the first reference scale, the second reference scale, and the third reference scale are all formed by a single exposure, so as to effectively avoid the influence of errors in the reference scale itself caused by multiple exposures. The third exposure layer and the fourth exposure layer set in the same layer will use the second reference scale for alignment during exposure alignment. In this way, by using the same set of reference scales when exposing the same layer, this effectively avoids the use of The influence of positional deviation caused by different datum scales. The preparation method of the driving substrate of the present application can effectively solve the influence caused by the difference in the position and size of the reference scale, and further in the exposure process, the alignment performance of the overlapping exposure area of the second layer is improved, and the splicing accuracy of the overlapping exposure area is improved.

附图说明Description of drawings

为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained from these drawings without creative effort.

图1是一种现有的玻璃基板的曝光对位方式的示意图;FIG. 1 is a schematic diagram of an existing exposure alignment mode of a glass substrate;

图2是另一种现有的玻璃基板的曝光对位方式的示意图;FIG. 2 is a schematic diagram of an exposure alignment method of another existing glass substrate;

图3是本申请实施例提供的驱动基板的制备方法的流程示意图;3 is a schematic flowchart of a method for preparing a driving substrate provided by an embodiment of the present application;

图4是本申请实施例提供的驱动基板的制备方法的步骤S1的结构示意图;FIG. 4 is a schematic structural diagram of step S1 of the method for preparing a driving substrate provided by an embodiment of the present application;

图5是本申请实施例提供的驱动基板的制备方法的步骤S2的结构示意图;FIG. 5 is a schematic structural diagram of step S2 of the method for preparing a driving substrate provided by an embodiment of the present application;

图6是本申请实施例提供的驱动基板的制备方法的第三曝光层曝光后的结构示意图;FIG. 6 is a schematic structural diagram of the third exposure layer after exposure of the method for preparing a driving substrate provided in an embodiment of the present application;

图7是本申请实施例提供的驱动基板的制备方法的第四曝光层曝光后的结构示意图;FIG. 7 is a schematic structural diagram of the fourth exposure layer after exposure of the method for preparing a driving substrate provided by an embodiment of the present application;

图8是本申请实施例提供的驱动基板的制备方法的步骤S6、S7以及S8的流程示意图。FIG. 8 is a schematic flowchart of steps S6 , S7 and S8 of the manufacturing method of the driving substrate provided by the embodiment of the present application.

具体实施方式Detailed ways

下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。此外,应当理解的是,此处所描述的具体实施方式仅用于说明和解释本申请,并不用于限制本申请。在本申请中,在未作相反说明的情况下,使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下,具体为附图中的图面方向;而“内”和“外”则是针对装置的轮廓而言的。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, but not to limit the present application. In this application, unless otherwise stated, the directional words used such as "upper" and "lower" generally refer to the upper and lower sides of the device in actual use or working state, specifically the drawing direction in the accompanying drawings ; while "inside" and "outside" refer to the outline of the device.

目前拼接曝光工艺对位方案主要分为两种,第一种是后续层对位使用非拼接区域AA的标尺,参照图1,具体流程为:第一层电路图案的曝光分为左右两次进行,中间斜纹填充的窄条区域为拼接曝光区aa。后续电路层曝光对位所需要的基准标尺在非拼接区域AA处,由两次曝光分别形成。第二层电路图案的曝光也分为左右两次进行,其两次曝光的拼接区域与第一层电路曝光拼接区域一致。第二层电路左侧曝光对位使用的基准标尺A1是由第一层电路左侧曝光制作,第二层电路右侧曝光对位使用的基准标尺A2是由第一层电路右侧曝光制作。该方案的技术缺陷是对于第二层电路拼接曝光区而言,由于其对位标尺分别是两次曝光制作而成,标尺本身的位置与尺寸存在偏差,这种偏差无法消除,直接影响第二层电路的拼接曝光精度。At present, the alignment schemes of the splicing exposure process are mainly divided into two types. The first one is to use the ruler of the non-splicing area AA for the subsequent layer alignment. Referring to Figure 1, the specific process is as follows: the exposure of the first layer of circuit patterns is divided into two left and right , the narrow strip area filled with the middle twill is the splicing exposure area aa. The reference scale required for the exposure alignment of the subsequent circuit layers is at the non-splicing area AA, which is formed by two exposures respectively. The exposure of the circuit pattern of the second layer is also divided into two left and right, and the splicing area of the two exposures is consistent with the splicing area of the first layer of circuit exposure. The datum scale A1 used for exposure alignment on the left side of the second layer circuit is made by the left side exposure of the first layer circuit, and the datum scale A2 used for the exposure alignment on the right side of the second layer circuit is made by the right side exposure of the first layer circuit. The technical defect of this solution is that for the second-layer circuit splicing exposure area, since the alignment scales are made by two exposures respectively, there is a deviation between the position and size of the scale itself. This deviation cannot be eliminated and directly affects the second layer. The stitching exposure accuracy of the layer circuit.

参照图2,而第二种现有的对位方案为:第一层电路图案的曝光分为左右两次进行,中间斜纹填充的窄条区域为拼接曝光区aa。在后续电路层曝光对位中所需要的基准标尺,左右量测的基准标尺分别由左右单次曝光形成,中间位置的基准标尺A1位于拼接曝光区内,它是由左右两次重叠曝光形成。第二层电路图案的曝光也分为左右两次进行,其两次曝光的重叠区域与第一层电路曝光重叠区域一致;第二层电路左右两次曝光时,其重叠区域共用基准标尺A1。该方案的技术缺陷:虽然该方案可以避免不同基准标尺位置差异的问题,但是由于共用的基准标尺位是第一层电路重叠曝光形成,其本身的位置与尺寸精度会受到重叠曝光的影响,对第二层电路重叠曝光区的拼接精度造成一定的影响。Referring to FIG. 2 , the second existing alignment scheme is: the exposure of the circuit pattern of the first layer is divided into left and right two times, and the narrow strip area filled with twill in the middle is the splicing exposure area aa. The datum scale required in the subsequent circuit layer exposure alignment, the datum scale for left and right measurement is formed by left and right single exposures, and the middle position datum scale A1 is located in the splicing exposure area, which is formed by two overlapping exposures on the left and right. The exposure of the circuit pattern of the second layer is also divided into two left and right, and the overlapping area of the two exposures is consistent with the overlapping area of the first layer circuit exposure; when the second layer circuit is exposed twice, the overlapping area shares the reference scale A1. The technical defects of this scheme: Although this scheme can avoid the problem of the position difference of different reference scales, since the common reference scale position is formed by the overlapping exposure of the first layer circuit, its own position and size accuracy will be affected by the overlapping exposure. The splicing accuracy of the overlapping exposure area of the second layer circuit has a certain influence.

因此,需要设计一种制备方法以有效改善重叠曝光区的拼接精度。Therefore, a preparation method needs to be designed to effectively improve the splicing accuracy of overlapping exposure areas.

本申请实施例提供一种驱动基板的制备方法。以下分别进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。Embodiments of the present application provide a method for manufacturing a driving substrate. Each of them will be described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

参阅图3,本申请提供一种驱动基板的制备方法,包括:Referring to FIG. 3, the present application provides a method for preparing a driving substrate, including:

S1:提供一玻璃基板,通过第一掩模板与玻璃基板对位,以在玻璃基板上界定第一曝光区域,在玻璃基板的第一曝光区域形成第一曝光层,第一曝光层包括第一基准标尺;S1: Provide a glass substrate, align with the glass substrate through a first mask, so as to define a first exposure area on the glass substrate, and form a first exposure layer on the first exposure area of the glass substrate, and the first exposure layer includes a first exposure layer. datum ruler;

S2:通过第二掩模板与玻璃基板对位,以在玻璃基板上界定第二曝光区域,第二曝光区域与第一曝光区域部分重叠设置以形成为第一拼接区域,在玻璃基板的第二曝光区域形成与第一曝光层同层设置的第二曝光层,第二曝光层包括第二基准标尺和第三基准标尺,第一基准标尺、第二基准标尺以及和第三基准标尺同时位于第一拼接区域的外侧,且第二基准标尺位于第一基准标尺和第三基准标尺之间;S2: Aligning the glass substrate with the second mask plate to define a second exposure area on the glass substrate, the second exposure area and the first exposure area are partially overlapped to form a first splicing area, and a second exposure area on the glass substrate The exposure area forms a second exposure layer disposed in the same layer as the first exposure layer, the second exposure layer includes a second reference scale and a third reference scale, and the first reference scale, the second reference scale, and the third reference scale are simultaneously located on the first reference scale. An outer side of the splicing area, and the second reference scale is located between the first reference scale and the third reference scale;

S3:通过第三掩模板同时与第一基准标尺和第二基准标尺进行对位后,以在玻璃基板上界定第三曝光区域;S3: After the third mask plate is aligned with the first reference scale and the second reference scale at the same time, the third exposure area is defined on the glass substrate;

S4:通过第四掩模板同时与第二基准标尺和第三基准标尺进行对位后,以在玻璃基板上界定第四曝光区域,第四曝光区域与第三曝光区域部分重叠设置形成第二拼接区域;S4: After the fourth mask is aligned with the second reference scale and the third reference scale at the same time, a fourth exposure area is defined on the glass substrate, and the fourth exposure area and the third exposure area are partially overlapped to form a second splicing area;

S5:通过第三掩模板对玻璃基板的第三曝光区域进行曝光以形成第三曝光层,第三曝光层位于第一曝光层的上方,通过第四掩模板对玻璃基板的第四曝光区域进行曝光以形成与第三曝光层同层设置的第四曝光层。S5: exposing the third exposure area of the glass substrate through a third mask to form a third exposure layer, the third exposure layer is located above the first exposure layer, and exposing the fourth exposure area of the glass substrate through a fourth mask Exposure to form a fourth exposure layer disposed in the same layer as the third exposure layer.

可以理解的是,本申请实施例在拼接曝光过程中,同层设置的第一曝光层和第二曝光层的重叠形成第一拼接区域,而并将第一基准标尺、第二基准标尺以及和第三基准标尺均设置在第一拼接区域外侧,且第一基准标尺、第二基准标尺以及和第三基准标尺均是由单次曝光形成,以有效避免因多次曝光而导致基准标尺本身存在误差的影响。而后续同层设置的第三曝光层和第四曝光层在曝光对位中均会使用第二基准标尺进行对位,如此通过在曝光同层时采用同一组基准标尺,如此有效避免了因采用不同基准标尺而导致位置偏差的影响。进而本申请的驱动基板的制备方法可以有效解决由于基准标尺的位置及尺寸差异造成的影响,进而在拼接曝光产品曝光工艺制程中,提升第二层及以后重叠曝光区域的对位性能,改善重叠曝光区的拼接精度。It can be understood that, during the splicing exposure process in the embodiment of the present application, the overlapping of the first exposure layer and the second exposure layer provided in the same layer forms the first splicing area, and the first reference scale, the second reference scale and the The third datum scale is set outside the first splicing area, and the first datum scale, the second datum scale and the third datum scale are all formed by a single exposure, so as to effectively avoid the existence of the datum scale itself due to multiple exposures effect of errors. The third exposure layer and the fourth exposure layer set in the same layer will use the second reference scale for alignment during exposure alignment. In this way, by using the same set of reference scales when exposing the same layer, this effectively avoids the use of The influence of positional deviation caused by different datum scales. Furthermore, the preparation method of the driving substrate of the present application can effectively solve the influence caused by the difference in the position and size of the reference scale, and further in the exposure process of the splicing exposure product, the alignment performance of the second layer and subsequent overlapping exposure areas can be improved, and the overlapping can be improved. The stitching accuracy of the exposure area.

下面将对驱动基板100的制备方法进行详细的阐述:The preparation method of the driving substrate 100 will be described in detail below:

请参阅图4和图5,在步骤S1中,提供一玻璃基板10,通过第一掩模板与玻璃基板10对位,以在玻璃基板10上界定第一曝光区域11,在玻璃基板10的第一曝光区域11形成第一曝光层20,第一曝光层20包括第一基准标尺21。Please refer to FIG. 4 and FIG. 5 , in step S1 , a glass substrate 10 is provided and aligned with the glass substrate 10 through a first mask to define a first exposure area 11 on the glass substrate 10 . An exposure area 11 forms a first exposure layer 20 , and the first exposure layer 20 includes a first reference scale 21 .

可以理解的是,该第一曝光层20与后续的第二曝光层30、第三曝光层40以及第四曝光层50既可以为驱动基板100的金属层,或者也可以为驱动基板100的像素层等。而第一基准标尺21、第二基准标尺31以及第三基准标尺32均为金属材质,如此以便于后续与各个掩模板进行识别对位。而第一基准标尺21、第二基准标尺31以及第三基准标尺32为同种图案,以便于第一掩模板和第二掩模板上图案的制备。It can be understood that the first exposure layer 20 and the subsequent second exposure layer 30 , the third exposure layer 40 and the fourth exposure layer 50 can be either the metal layer of the driving substrate 100 or the pixels of the driving substrate 100 . layer etc. The first reference scale 21 , the second reference scale 31 , and the third reference scale 32 are all made of metal, so as to facilitate subsequent identification and alignment with each mask. The first reference scale 21 , the second reference scale 31 and the third reference scale 32 are of the same pattern, so as to facilitate the preparation of patterns on the first mask plate and the second mask plate.

在步骤S2中,通过第二掩模板与玻璃基板10对位,以在玻璃基板10上界定第二曝光区域12,第二曝光区域12与第一曝光区域11部分重叠设置以形成为第一拼接区域15。在玻璃基板10的第二曝光区域12形成与第一曝光层20同层设置的第二曝光层30,第二曝光层30包括第二基准标尺31和第三基准标尺32。第一基准标尺21、第二基准标尺31以及第三基准标尺32同时位于第一拼接区域15的外侧,且第二基准标尺31位于第一基准标尺21和第三基准标尺32之间。In step S2, the second mask plate is aligned with the glass substrate 10 to define a second exposure area 12 on the glass substrate 10, and the second exposure area 12 and the first exposure area 11 are partially overlapped to form a first splicing area 15. In the second exposure region 12 of the glass substrate 10 , a second exposure layer 30 is formed on the same layer as the first exposure layer 20 , and the second exposure layer 30 includes a second reference scale 31 and a third reference scale 32 . The first reference scale 21 , the second reference scale 31 and the third reference scale 32 are simultaneously located outside the first splicing area 15 , and the second reference scale 31 is located between the first reference scale 21 and the third reference scale 32 .

可以理解的是,第一掩模板和第二掩模板可以为独立的两个板体设置,以便于独立使用。当然第一掩模板和第二掩模板也可以为一整块板体设置,在曝光过程中,通过调整位置以使得在制备第一曝光层20和第二曝光层30时分别使第一掩模板和第二掩模板分别与曝光机所对应即可。而第二曝光区域12的面积大于第一曝光区域11的面积,如此在制备过程中,如此以使得整个第一拼接区域15在同层设置的第一曝光层20和第二曝光层30中的位置偏移两者的中心设置,更靠近边缘处,如此以便于与后续位于中间处的第二基准标尺31错开设置。It can be understood that, the first mask plate and the second mask plate can be provided as two independent plates so as to be used independently. Of course, the first mask plate and the second mask plate can also be set as a whole plate body. During the exposure process, the positions of the first mask plate are adjusted so that when the first exposure layer 20 and the second exposure layer 30 are prepared, the first mask plate is made respectively. And the second mask plate may correspond to the exposure machine respectively. The area of the second exposure area 12 is larger than the area of the first exposure area 11, so in the preparation process, so that the entire first splicing area 15 in the first exposure layer 20 and the second exposure layer 30 disposed on the same layer The positions are offset from the center of the two, closer to the edge, so as to be staggered from the second reference scale 31 located in the middle.

请参阅图6,在步骤S3中,通过第三掩模板同时与第一基准标尺21和第二基准标尺31进行对位后,以在玻璃基板10上界定第三曝光区域13。Referring to FIG. 6 , in step S3 , the third mask plate is used to define the third exposure area 13 on the glass substrate 10 after aligning with the first reference scale 21 and the second reference scale 31 at the same time.

可以理解的是,该第三掩模板上设有与第一基准标尺21和第二基准标尺31相对应标记,如此通过对应标记以对第三掩模板的位置进行限定以在玻璃基板10上界定出第三曝光区域13。It can be understood that, the third mask plate is provided with marks corresponding to the first reference scale 21 and the second reference scale 31 , so that the position of the third mask plate is defined by the corresponding marks to define on the glass substrate 10 The third exposure area 13 is obtained.

请参阅图7,在步骤S4中,通过第四掩模板同时与第二基准标尺31和第三基准标尺32进行对位后,以在玻璃基板10上界定第四曝光区域14,第四曝光区域14与第三曝光区域13部分重叠设置形成第二拼接区域16。Please refer to FIG. 7 , in step S4 , after the fourth mask plate is used to align the second reference scale 31 and the third reference scale 32 at the same time, the fourth exposure area 14 is defined on the glass substrate 10 , and the fourth exposure area is 14 is partially overlapped with the third exposure area 13 to form a second splicing area 16 .

可以理解的是,该第四掩模板上设有与第二基准标尺31和第三基准标尺32相对应标记,如此通过对应标记对第四掩模板的位置进行限定以在玻璃基板10上界定出第四曝光区域14。而该第三掩模板和第四掩模板可以为独立的两个板体设置,以便于独立使用。当然第三掩模板和第四掩模板也可以为一整块板体设置,在曝光过程中,通过调整位置以使得在制备第三曝光层40和第四曝光层50时分别使第三掩模板和第四掩模板分别与曝光机所对应即可。It can be understood that, the fourth mask plate is provided with marks corresponding to the second reference scale 31 and the third reference scale 32 , so that the position of the fourth mask plate is defined by the corresponding marks to define on the glass substrate 10 . Fourth exposure area 14 . The third mask plate and the fourth mask plate can be set as two independent plates, so as to be used independently. Of course, the third mask plate and the fourth mask plate can also be provided as a whole plate body. During the exposure process, the positions of the third mask plate are adjusted so that when the third exposure layer 40 and the fourth exposure layer 50 are prepared, the third mask plate is respectively And the fourth mask plate may correspond to the exposure machine respectively.

参照图6和图7,在一些实施例中,第二基准标尺31位于第二拼接区域16内。其中,需要说明的是,曝光是一个光斑扫描的过程,横向光斑在竖向做扫描,对位的实质就是识别基准层的位置,对位得到的数据中有一项是反映横向光斑,在横向需要扩大或者缩小的比例(横向扩大或缩小的绝对值/横向跨距),对位标尺的横向跨距越大,那么对位数据的误差(对位精度或随机误差等)就越小。而由于第二拼接区域16位于第三曝光区域13和第四曝光区域14的横向最外侧,如此通过使第二基准标尺31位于第二拼接区域16中,这样使得对位准确性更高。Referring to FIGS. 6 and 7 , in some embodiments, the second reference scale 31 is located within the second stitching area 16 . Among them, it should be noted that exposure is a process of spot scanning. The horizontal spot is scanned vertically. The essence of alignment is to identify the position of the reference layer. One of the data obtained by alignment is to reflect the horizontal spot. The ratio of enlargement or reduction (absolute value of horizontal enlargement or reduction/horizontal span), the larger the horizontal span of the alignment scale, the smaller the error of alignment data (alignment accuracy or random error, etc.). Since the second splicing area 16 is located at the laterally outermost side of the third exposure area 13 and the fourth exposure area 14 , the second reference scale 31 is located in the second splicing area 16 , so that the alignment accuracy is higher.

在一些实施例中,第二基准标尺31位于玻璃基板10的中部。如此以便于第三掩模板和第四掩模板的对位放置。In some embodiments, the second reference scale 31 is located in the middle of the glass substrate 10 . This facilitates the alignment and placement of the third mask plate and the fourth mask plate.

参照图6和图7,在一些实施例中,第二基准标尺31设有多个,多个第二基准标尺31沿第二拼接区域16的长度延伸方向间隔排列。其中,通过设置多个第二基准标尺31以进一步增加对位位置,进而提高第三掩模板和第四掩模板的对位准确性。6 and 7 , in some embodiments, a plurality of second reference scales 31 are provided, and the plurality of second reference scales 31 are arranged at intervals along the lengthwise extending direction of the second splicing area 16 . Wherein, by setting a plurality of second reference scales 31 to further increase the alignment position, the alignment accuracy of the third mask plate and the fourth mask plate is further improved.

进一步地,第二拼接区域16的长度延伸方向的两端均设有一个第二基准标尺31。如此通过竖向方向的两端边缘的对位,更能较好提高后续掩膜掩模板对位的准确性。Further, both ends of the lengthwise extending direction of the second splicing area 16 are provided with a second reference scale 31 . In this way, the alignment accuracy of the subsequent mask and mask plate can be better improved by the alignment of the two ends in the vertical direction.

更进一步地,第一基准标尺21和第三基准标尺32均设有多个,多个第一基准标尺21沿第二拼接区域16的长度延伸方向间隔排列,多个第三基准标尺32沿第二拼接区域16的长度延伸方向间隔排列。其中,通过设置多个第一基准标尺21和多个第三基准标尺32以进一步增加对位位置,进而提高第三掩模板和第四掩模板的对位准确性。Further, a plurality of first reference scales 21 and a plurality of third reference scales 32 are provided. The lengthwise extending directions of the two splicing regions 16 are arranged at intervals. Wherein, by setting a plurality of first reference scales 21 and a plurality of third reference scales 32 to further increase the alignment position, thereby improving the alignment accuracy of the third mask plate and the fourth mask plate.

进一步地,一第一基准标尺21分别与一第二基准标尺31和一第三基准标尺32沿第二拼接区域16的宽度延伸方向平齐设置。如此以使得第三曝光区域13和第四曝光区域14的横向保证平齐,以进一步提高对位准确性。Further, a first reference scale 21 is respectively disposed flush with a second reference scale 31 and a third reference scale 32 along the width extension direction of the second splicing area 16 . In this way, the lateral directions of the third exposure area 13 and the fourth exposure area 14 are guaranteed to be flush, so as to further improve the alignment accuracy.

参照图6和图7,在步骤S5中,通过第三掩模板对玻璃基板10的第三曝光区域13进行曝光以形成第三曝光层40,第三曝光层40位于第一曝光层20的上方,通过第四掩模板对玻璃基板10的第四曝光区域14进行曝光以形成与第三曝光层40同层设置的第四曝光层50。Referring to FIGS. 6 and 7 , in step S5 , the third exposure region 13 of the glass substrate 10 is exposed through a third mask to form a third exposure layer 40 located above the first exposure layer 20 and exposing the fourth exposure region 14 of the glass substrate 10 through a fourth mask to form a fourth exposure layer 50 disposed at the same layer as the third exposure layer 40 .

其中,在第三曝光层40和第四曝光层50时,会先通过第三掩模板和第四掩模板先进行对位,其既可以第三掩模板和第四掩模板保持不动,之后通过移动玻璃基板10进行对位。或者也可以使玻璃基板10固定不动,以通过按顺序放置第三掩模板和第四掩模板进行对位。以下为移动玻璃基板10的方式:先通过第三掩模板与玻璃基板10上的第一基准标尺21和第二基准标尺31对位,记录对位数据,调整误差,之后移动玻璃基板10的第二基准标尺31和第三基准标尺32与第四掩模板进行对位,记录对位数据,调整误差,之后再移动玻璃基板10回到与第三掩模板的对位所记录的位置开始进行曝光,当曝光形成第三曝光层40后,再移动玻璃基板10以使其与第四掩模板对位所记录的位置进行对位曝光。如此在同层设置的第三曝光层40和第四曝光层50中,先通过对位调整误差再进行逐一曝光的方式,以提高同层曝光层形成的拼接准确性。Among them, when the third exposure layer 40 and the fourth exposure layer 50 are used, the third mask plate and the fourth mask plate are firstly aligned, which can keep the third mask plate and the fourth mask plate still, and then Positioning is performed by moving the glass substrate 10 . Alternatively, the glass substrate 10 may be fixed to perform alignment by placing the third mask plate and the fourth mask plate in sequence. The method of moving the glass substrate 10 is as follows: firstly, align the first reference scale 21 and the second reference scale 31 on the glass substrate 10 through the third mask, record the alignment data, adjust the error, and then move the first reference scale 21 and the second reference scale 31 on the glass substrate 10. The second reference scale 31 and the third reference scale 32 are aligned with the fourth mask, the alignment data is recorded, the error is adjusted, and then the glass substrate 10 is moved back to the recorded position for alignment with the third mask to start exposure. , after exposure to form the third exposure layer 40 , the glass substrate 10 is then moved to align the position recorded with the fourth mask to perform alignment exposure. In this way, in the third exposure layer 40 and the fourth exposure layer 50 arranged in the same layer, the splicing accuracy of the exposure layers formed on the same layer is improved by adjusting the error of position and then performing exposure one by one.

参照图6和图7,在一些实施例中,第一基准标尺21位于第三曝光区域13远离第四曝光区域14的一侧。需要说明的是,曝光是一个光斑扫描的过程,横向光斑在竖向做扫描,对位的实质就是识别基准层的位置,对位得到的数据中有一项是反映横向光斑,在横向需要扩大或者缩小的比例,对位标尺的横向跨距越大,那么对位数据的误差就越小,如此通过使得第一基准标尺21位于第三曝光区域13远离第四曝光区域14的一侧,即第一基准标尺21位于曝光区域横向最外侧,以使得对位准确性更高。6 and 7 , in some embodiments, the first reference scale 21 is located on a side of the third exposure area 13 away from the fourth exposure area 14 . It should be noted that exposure is a process of spot scanning. The horizontal spot is scanned vertically. The essence of alignment is to identify the position of the reference layer. One of the data obtained by alignment reflects the horizontal spot, which needs to be enlarged or The reduced ratio, the larger the horizontal span of the alignment scale, the smaller the error of alignment data, so that the first reference scale 21 is located on the side of the third exposure area 13 away from the fourth exposure area 14, that is, the A reference scale 21 is located at the outermost lateral side of the exposure area, so that the alignment accuracy is higher.

在一些实施例中,第三基准标尺32位于第四曝光区域14远离第三曝光区域13的一侧。同理,通过使得第三基准标尺32位于第三曝光区域13远离第四曝光区域14的一侧,即第三基准标尺32位于曝光区域横向最外侧,以使得对位准确性更高。In some embodiments, the third reference scale 32 is located on a side of the fourth exposure area 14 away from the third exposure area 13 . Similarly, the third reference scale 32 is located on the side of the third exposure area 13 away from the fourth exposure area 14 , that is, the third reference scale 32 is located at the outermost laterally of the exposure area, so that the alignment accuracy is higher.

参照图8,在本申请的一些实施例中,驱动基板100的制备方法还包括以下步骤:Referring to FIG. 8 , in some embodiments of the present application, the manufacturing method of the driving substrate 100 further includes the following steps:

S6:通过第五掩模板同时与第一基准标尺21和第二基准标尺31进行对位后,以在玻璃基板10上界定第五曝光区域;S6: After the fifth mask plate is aligned with the first reference scale 21 and the second reference scale 31 at the same time, the fifth exposure area is defined on the glass substrate 10;

S7:通过第六掩模板同时与第二基准标尺31和第三基准标尺32进行对位后,以在玻璃基板10上界定第六曝光区域,第六曝光区域与第五曝光区域部分重叠设置以形成第三拼接区域,第三拼接区域与第二拼接区域16重合设置;S7: After the sixth mask plate is simultaneously aligned with the second reference scale 31 and the third reference scale 32, a sixth exposure area is defined on the glass substrate 10, and the sixth exposure area and the fifth exposure area are partially overlapped and set to A third splicing area is formed, and the third splicing area and the second splicing area 16 are overlapped and arranged;

S8:通过第五掩模板对玻璃基板10的第五曝光区域进行曝光以形成第五曝光层,第五曝光层位于第三曝光层40的上方,通过第六掩模板对玻璃基板10的第六曝光区域进行曝光以形成与第五曝光层同层设置的第六曝光层。S8 : exposing the fifth exposure area of the glass substrate 10 through the fifth mask to form a fifth exposure layer, the fifth exposure layer is located above the third exposure layer 40 , and the sixth exposure area of the glass substrate 10 is exposed through the sixth mask The exposure area is exposed to form a sixth exposure layer disposed in the same layer as the fifth exposure layer.

其中,当在第三曝光层40和第四曝光层50上制备其他曝光层时,通过使得第五掩模板和第六掩模板继续与第一基准标尺21、第二基准标尺31以及第三基准标尺32进行对位,如此以保证后续重叠曝光区域的对位性能,改善重叠曝光区的拼接精度。Wherein, when other exposure layers are prepared on the third exposure layer 40 and the fourth exposure layer 50, by making the fifth mask plate and the sixth mask plate continue to communicate with the first reference scale 21, the second reference scale 31 and the third reference The scale 32 is aligned, so as to ensure the alignment performance of the subsequent overlapping exposure areas and improve the splicing accuracy of the overlapping exposure areas.

以上对本申请实施例所提供的一种驱动基板的制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。The method for preparing a driving substrate provided by the embodiments of the present application has been described in detail above, and the principles and implementations of the present application are described with specific examples. The descriptions of the above embodiments are only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of the application, there will be changes in the specific implementation and application scope. In summary, the content of this specification should not be construed as a Application restrictions.

Claims (10)

1.一种驱动基板的制备方法,其特征在于,包括:1. A preparation method of a driving substrate, characterized in that, comprising: S1:提供一玻璃基板,通过第一掩模板与所述玻璃基板对位,以在所述玻璃基板上界定第一曝光区域,在所述玻璃基板的第一曝光区域形成第一曝光层,所述第一曝光层包括第一基准标尺;S1: Provide a glass substrate, which is aligned with the glass substrate through a first mask, so as to define a first exposure area on the glass substrate, and form a first exposure layer in the first exposure area of the glass substrate. the first exposure layer includes a first reference scale; S2:通过第二掩模板与所述玻璃基板对位,以在所述玻璃基板上界定第二曝光区域,所述第二曝光区域与所述第一曝光区域部分重叠设置以形成为第一拼接区域,在所述玻璃基板的所述第二曝光区域形成与所述第一曝光层同层设置的第二曝光层,所述第二曝光层包括第二基准标尺和第三基准标尺,所述第一基准标尺、所述第二基准标尺以及第三基准标尺同时位于所述第一拼接区域的外侧,且所述第二基准标尺位于所述第一基准标尺和所述第三基准标尺之间;S2: Aligning the glass substrate with a second mask to define a second exposure area on the glass substrate, and the second exposure area and the first exposure area are partially overlapped to form a first splicing In the second exposure area of the glass substrate, a second exposure layer disposed in the same layer as the first exposure layer is formed, the second exposure layer includes a second reference scale and a third reference scale, the The first reference scale, the second reference scale and the third reference scale are simultaneously located outside the first splicing area, and the second reference scale is located between the first reference scale and the third reference scale ; S3:通过第三掩模板同时与所述第一基准标尺和所述第二基准标尺进行对位后,以在所述玻璃基板上界定第三曝光区域;S3: define a third exposure area on the glass substrate after the third mask plate is aligned with the first reference scale and the second reference scale at the same time; S4:通过第四掩模板同时与所述第二基准标尺和所述第三基准标尺进行对位后,以在所述玻璃基板上界定第四曝光区域,所述第四曝光区域与所述第三曝光区域部分重叠设置形成第二拼接区域;S4: After aligning with the second reference scale and the third reference scale at the same time through a fourth mask, a fourth exposure area is defined on the glass substrate, and the fourth exposure area is aligned with the first reference scale. The three exposure areas are partially overlapped to form a second splicing area; S5:通过所述第三掩模板对所述玻璃基板的第三曝光区域进行曝光以形成第三曝光层,所述第三曝光层位于所述第一曝光层的上方,通过所述第四掩模板对所述玻璃基板的第四曝光区域进行曝光以形成与所述第三曝光层同层设置的第四曝光层。S5: Expose the third exposure region of the glass substrate through the third mask to form a third exposure layer, the third exposure layer is located above the first exposure layer, and the fourth exposure layer is passed through the fourth mask. The template exposes the fourth exposure area of the glass substrate to form a fourth exposure layer disposed in the same layer as the third exposure layer. 2.如权利要求1所述的驱动基板的制备方法,其特征在于,所述第二基准标尺位于所述第二拼接区域内。2 . The manufacturing method of a driving substrate according to claim 1 , wherein the second reference scale is located in the second splicing area. 3 . 3.如权利要求1所述的驱动基板的制备方法,其特征在于,所述第二基准标尺位于所述玻璃基板的中部。3 . The manufacturing method of the driving substrate according to claim 1 , wherein the second reference scale is located in the middle of the glass substrate. 4 . 4.如权利要求2所述的驱动基板的制备方法,其特征在于,所述第二基准标尺设有多个,多个所述第二基准标尺沿所述第二拼接区域的长度延伸方向间隔排列。4 . The manufacturing method of the driving substrate according to claim 2 , wherein a plurality of the second reference scales are provided, and the plurality of the second reference scales are spaced along the length extension direction of the second splicing area. 5 . arrangement. 5.如权利要求4所述的驱动基板的制备方法,其特征在于,所述第二拼接区域的长度延伸方向的两端均设有一所述第二基准标尺。5 . The manufacturing method of the driving substrate according to claim 4 , wherein the second reference scale is provided at both ends of the second splicing region in the lengthwise extending direction. 6 . 6.如权利要求4所述的驱动基板的制备方法,其特征在于,所述第一基准标尺和所述第三基准标尺均设有多个,多个所述第一基准标尺沿所述第二拼接区域的长度延伸方向间隔排列,多个所述第三基准标尺沿所述第二拼接区域的长度延伸方向间隔排列。6 . The manufacturing method of the driving substrate according to claim 4 , wherein a plurality of the first reference scales and the third reference scales are provided, and a plurality of the first reference scales are arranged along the first reference scales. 7 . The length extension directions of the two splicing regions are arranged at intervals, and a plurality of the third reference scales are arranged at intervals along the length extension directions of the second splicing regions. 7.如权利要求6所述的驱动基板的制备方法,其特征在于,一所述第一基准标尺分别与一所述第二基准标尺和一所述第三基准标尺沿所述第二拼接区域的宽度延伸方向平齐设置。7 . The manufacturing method of a driving substrate according to claim 6 , wherein, one of the first reference scales, one of the second reference scales and one of the third reference scales are respectively along the second splicing area. 8 . The width of the extension direction is set flush. 8.如权利要求1所述的驱动基板的制备方法,其特征在于,所述第一基准标尺位于所述第三曝光区域远离所述第四曝光区域的一侧。8 . The method for manufacturing a driving substrate according to claim 1 , wherein the first reference scale is located on a side of the third exposure area away from the fourth exposure area. 9 . 9.如权利要求1所述的驱动基板的制备方法,其特征在于,所述第三基准标尺位于所述第四曝光区域远离所述第三曝光区域的一侧。9 . The method for manufacturing a driving substrate according to claim 1 , wherein the third reference scale is located on a side of the fourth exposure area away from the third exposure area. 10 . 10.如权利要求1所述的驱动基板的制备方法,其特征在于,所述的驱动基板的制备方法在所述步骤S5之后还包括:10 . The method for manufacturing a driving substrate according to claim 1 , wherein after the step S5 , the method for preparing a driving substrate further comprises: 10 . S6:通过第五掩模板同时与所述第一基准标尺和所述第二基准标尺进行对位后,以在所述玻璃基板上界定第五曝光区域;S6: define a fifth exposure area on the glass substrate after aligning with the first reference scale and the second reference scale at the same time through a fifth mask; S7:通过第六掩模板同时与所述第二基准标尺和所述第三基准标尺进行对位后,以在所述玻璃基板上界定第六曝光区域,所述第六曝光区域与所述第五曝光区域部分重叠设置以形成第三拼接区域,所述第三拼接区域与所述第二拼接区域重合设置;S7: After aligning with the second reference scale and the third reference scale at the same time through the sixth mask, a sixth exposure area is defined on the glass substrate, and the sixth exposure area is aligned with the first reference scale. The five exposure areas are partially overlapped to form a third splicing area, and the third splicing area and the second splicing area are overlapped and arranged; S8:通过所述第五掩模板对所述玻璃基板的第五曝光区域进行曝光以形成第五曝光层,所述第五曝光层位于所述第三曝光层的上方,通过所述第六掩模板对所述玻璃基板的第六曝光区域进行曝光以形成与所述第五曝光层同层设置的第六曝光层。S8: Expose the fifth exposure area of the glass substrate through the fifth mask to form a fifth exposure layer, the fifth exposure layer is located above the third exposure layer, and the sixth exposure layer is passed through the sixth mask. The template exposes the sixth exposure area of the glass substrate to form a sixth exposure layer disposed in the same layer as the fifth exposure layer.
CN202210792254.6A 2022-07-05 2022-07-05 Preparation method of driving substrate Pending CN115079524A (en)

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