CN115083868B - Electron emission device, electron detection device and combination thereof - Google Patents
Electron emission device, electron detection device and combination thereof Download PDFInfo
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- CN115083868B CN115083868B CN202210713908.1A CN202210713908A CN115083868B CN 115083868 B CN115083868 B CN 115083868B CN 202210713908 A CN202210713908 A CN 202210713908A CN 115083868 B CN115083868 B CN 115083868B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/065—Construction of guns or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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Abstract
本发明公开了一种电子发射装置、一种电子探测装置及其组合体。电子发射装置包括绝缘基体和金属面，金属面覆盖绝缘基体的一侧，金属面的一侧构造出若干灯丝，若干灯丝间隔排布且延伸方向相互平行。电子探测装置包括若干隔离层、若干PN结、若干电子接收层、若干导电柱和若干引出层。本发明提供的电子发射装置与电子探测装置为多电子发射源发射、多探测点接收的形式，能够实现样品图像的阵列化采集，提高采样通量和探测效率。电子发射装置与电子探测装置的组合体能够实现发射‑探测一体化，这种一体化装置所占真空腔室的体积大大减小，有利于推动扫描电子显微镜的小型化、便携化，即为便携式的扫描电子显微镜的实现创造了条件。
The present invention discloses an electron emission device, an electron detection device and a combination thereof. The electron emission device comprises an insulating substrate and a metal surface, wherein the metal surface covers one side of the insulating substrate, and a plurality of filaments are constructed on one side of the metal surface, wherein the plurality of filaments are arranged at intervals and their extension directions are parallel to each other. The electron detection device comprises a plurality of isolation layers, a plurality of PN junctions, a plurality of electron receiving layers, a plurality of conductive columns and a plurality of lead-out layers. The electron emission device and the electron detection device provided by the present invention are in the form of multi-electron emission source emission and multi-detection point reception, which can realize arrayed acquisition of sample images and improve sampling flux and detection efficiency. The combination of the electron emission device and the electron detection device can realize emission-detection integration, and the volume of the vacuum chamber occupied by such an integrated device is greatly reduced, which is conducive to promoting the miniaturization and portability of scanning electron microscopes, that is, creating conditions for the realization of portable scanning electron microscopes.
Description
Technical Field
The present invention relates to the field of scanning electron microscope, and more particularly, to an electron emission device, an electron detection device, and a combination thereof.
Background
Scanning electron microscopy (ScanningElectronMicroscope, abbreviated as SEM), scanning electron microscopy for short, is a commonly used microscopic analysis instrument that uses various physical signals excited by a focused electron beam as it scans the surface of a sample to modulate the image.
The electron beam is generated by an electron emission device, which is a device for generating electron beam current with high energy density, and the electron beam is emitted from a filament, typically a tungsten filament, to be irradiated on the surface of the sample. Different physical signals generated by the irradiation of the electron beam on the surface of the sample are detected by different types of detection devices, wherein the detection devices comprise an electron detection device, a cathode fluorescence detection device, an X-ray detection device and the like. Electronic signals, such as secondary electrons and backscattered electrons, are detected by electron detection devices, and high-flux electron microscopy uses electron detection devices that are mostly semiconductor detection devices, such as silicon-based PN junction type detection devices.
At present, most of electron emission devices used by a scanning electron microscope are single-beam emission sources, namely single-point emission, and a detection device for detecting an electronic signal is single-point receiving, so that the efficiency is low, the sampling flux is affected, the array acquisition of images cannot be realized, and the existing electron emission devices also have the problems of complex filament processing and easy damage. In addition, the electron emission device and the electron detection device are relatively independent, the distance between the electron emission device and the sample and the distance between the sample and the electron detection device are macroscopic, and the receiving area of the existing electron detection device needs to be designed to be larger in consideration of improving the detection efficiency of secondary electrons and back scattered electrons on the surface of the sample, and accordingly a scanning electron microscope needs to provide a larger internal space.
Disclosure of Invention
To solve the above-mentioned drawbacks at least to some extent, the present invention provides an electron emission device, an electron detection device, and a combination thereof.
In a first aspect, the present invention provides an electron emission device, including an insulating substrate and a metal surface, where the metal surface covers one side of the insulating substrate, and one side of the metal surface constructs a plurality of filaments, and the filaments are arranged at intervals and have parallel extending directions.
Optionally, a portion of the metal face is etched to form the filament.
Optionally, an isolation groove is arranged on one side of the insulating base body, which is close to the filament, so that at least a certain interval is formed between the emitting end part of the filament and the insulating base body.
In a second aspect, the present invention provides an electronic detecting device, including a plurality of isolation layers, a plurality of PN junctions, a plurality of electron receiving layers, a plurality of conductive columns, and a plurality of extraction layers, where the plurality of isolation layers are stacked in a stepwise manner along a thickness direction thereof to form a plurality of step surfaces perpendicular to the thickness direction, the plurality of extraction layers are covered on the plurality of step surfaces in a one-to-one correspondence, the plurality of PN junctions are arranged at a bottom of the isolation layer located at a bottommost layer at intervals, the plurality of conductive columns are arranged in at least one isolation layer in a penetrating manner so as to electrically connect the plurality of PN junctions with the plurality of extraction layers in a one-to-one correspondence, the extraction layers are used for connecting leads, and the plurality of electron receiving layers are covered on a side of the PN junctions away from the isolation layer in a one-to-one correspondence.
Alternatively, the PN junction is opposite to the corresponding extraction layer in the thickness direction, and the conductive pillar extends in the thickness direction.
Optionally, the electronic device further comprises a cushion layer and an electronic receiving expansion layer, wherein the cushion layer is an insulating layer, the cushion layer is arranged at the bottom of the isolation layer at the bottommost layer, and the electronic receiving expansion layer covers one side of the cushion layer far away from the isolation layer and is electrically connected with each of the plurality of electronic receiving layers.
Optionally, the electron receiving expansion layer is electrically connected with the electron receiving layers through a plurality of conductive transition sections, and the width of the conductive transition sections is smaller than that of the electron receiving layers.
Optionally, the electron receiving expansion layer, the conductive transition section and the electron receiving layer are an integral metal layer.
Optionally, a projected area of the extraction layer in the thickness direction is larger than a projected area of the PN junction in the thickness direction.
In a third aspect, the present invention provides an assembly of an electron emission device and an electron detection device, including the electron emission device and the electron detection device, where the electron detection device is connected to a side of the insulating substrate away from the metal surface, and a plurality of filaments and a plurality of PN junctions are located on the same side of the assembly and are in one-to-one correspondence with each other.
The electron emission device and the electron detection device provided by the invention are in the forms of multi-electron emission source emission and multi-detection point receiving, can realize the arrayed acquisition of sample images, and improve the sampling flux and the detection efficiency. The combination of the electron emission device and the electron detection device can realize emission-detection integration, the volume of a vacuum chamber occupied by the integrated device is greatly reduced, the miniaturization and portability of a scanning electron microscope are facilitated, and conditions are created for the realization of the portable scanning electron microscope.
The above, as well as additional objectives, advantages, and features of the present invention will become apparent to those skilled in the art from the following detailed description of a specific embodiment of the present invention when read in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter by way of example and not by way of limitation with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts or portions. It will be appreciated by those skilled in the art that the drawings are not necessarily drawn to scale. In the accompanying drawings:
fig. 1 is a schematic structural diagram of an assembly of an electron emission device and an electron detection device according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a combination of an electron emission device and an electron detection device according to an embodiment of the invention.
Fig. 3 is a front view of fig. 1.
Fig. 4 is a right side view of fig. 1.
Fig. 5 is a left side view of fig. 1.
Fig. 6 is a B-B cross-sectional view of fig. 3.
Fig. 7 is a schematic view of a part of the structure of an electronic detecting device in an embodiment of the present invention.
Fig. 8 is a schematic diagram illustrating the operation of the combination of the electron emission device and the electron detection device according to an embodiment of the present invention.
Fig. 9 is a schematic diagram of the working principle of the combination of the electron emission device and the electron detection device in the embodiment of the invention.
Reference numerals:
The composite 100, the insulating base 1, the isolation groove 11, the metal surface 2, the filament 3, the isolation layer 4, the extraction layer 5, the PN junction 6, the conductive column 7, the electron receiving layer 8, the sample 9, the cushion layer 101, the electron receiving expansion layer 102 and the conductive transition section 103
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order to improve the sampling flux and efficiency of a scanning electron microscope and change the current situation of single-point emission and single-point reception, the invention provides an electron emission device, an electron detection device and a combination thereof.
The electron emission device provided by the invention comprises an insulating substrate 1 and a metal surface 2. The metal face 2 covers one side face of the insulating base 1. One side of the metal face 2 is provided with a plurality of filaments 3, i.e. a plurality of filaments 3 are positioned on the same side of the metal face 2. The filaments 3 are arranged at intervals and the extending directions are parallel to each other. Filament electrodes are led out from the metal surface 2, each filament 3 can be used as an electron emission source to emit electrons independently, and a plurality of filaments 3 arranged at intervals are combined into a plurality of electron emission sources, so that the electron emission device provided by the invention can emit a plurality of electrons simultaneously.
The invention provides an electronic detection device which comprises a plurality of isolation layers 4, a plurality of PN junctions 6, a plurality of electron receiving layers 8, a plurality of conductive columns 7 and a plurality of extraction layers 5. The plurality of spacers 4 are stacked stepwise in the thickness direction thereof to form a plurality of step surfaces perpendicular to the thickness direction. It will be appreciated that the planes of the stepped surfaces are spaced apart in the thickness direction and are parallel to one another. The plurality of lead-out layers 5 are correspondingly covered on the plurality of step surfaces formed by the isolation layers 4 one by one. Alternatively, the open portion (step surface) of the upper surface of each isolation layer 4 is covered with the extraction layer 5. The lead-out layer 5 is used for connecting leads. It will be appreciated that since the extraction layers 5 are respectively covered on different isolation layers 4, they are isolated from each other, and no signal crossing occurs.
The PN junctions 6 are arranged at intervals at the bottom of the isolation layer 4 at the bottommost layer, the conductive columns 7 are arranged in at least one isolation layer 4 in a penetrating mode so as to electrically connect the PN junctions 6 with the lead-out layers 5 in a one-to-one correspondence mode, and the electron receiving layers 8 cover one side, far away from the isolation layer 4, of the PN junctions 6 in a one-to-one correspondence mode. The electron receiving layer 8 is used for receiving electrons and transmitting signals to the PN junction 6, the PN junction 6 generates current to be led to the corresponding lead-out layer 5 through the corresponding conductive column 7, the current is led out through the corresponding lead-out wire, and the signals are processed to form pixels at the display end. It will be appreciated that the several PN junctions 6 receive signals independently of each other.
The assembly 100 of the electron emission device and the electron detection device provided by the invention comprises the electron emission device and the electron detection device, wherein the electron detection device is connected with one side of the insulating substrate 1 far away from the metal surface 2, a plurality of filaments 3 and a plurality of PN junctions 6 are positioned on the same side of the assembly 100, and the filaments 3 and the PN junctions 6 are in one-to-one correspondence. The electron beam emitted from the filament 3 collides with the surface of the sample 9, secondary electrons and back scattered electrons are excited, and the secondary electrons and the back scattered electrons are reflected to the electron receiving layer 8 below the corresponding PN junction 6 and received by the corresponding PN junction 6. The insulating substrate 1 isolates the filament 3 from the PN junction 6, so that the influence of electric field interference and sputtering of electron beams on the signal receiving process of the PN junction 6 is avoided.
The electron emission device and the electron detection device provided by the invention are in the forms of multi-electron emission source emission and multi-detection point receiving, can realize the arrayed acquisition of sample images, and improve the sampling flux and the detection efficiency. The combination of the electron emission device and the electron detection device can realize emission-detection integration, the volume of a vacuum chamber occupied by the integrated device is greatly reduced, the miniaturization and portability of a scanning electron microscope are facilitated, and conditions are created for the realization of the portable scanning electron microscope.
One embodiment of an assembly 100 of an electron emission device and an electron detection device according to the present invention is described below with reference to fig. 1 to 7.
As shown in fig. 1, the metal surface 2 covers one side surface of the insulating substrate 1, and the insulating substrate 1 plays a supporting role for the metal surface 2, and simultaneously isolates the metal surface 2 from the acquisition end of the electronic detection device. In this embodiment, the metal surface 2 is a tungsten metal surface, which is deposited on one side of the insulating substrate 1 by vapor deposition through a semiconductor processing process. The bottom of the metal face 2 is formed with a plurality of filaments 3 extending in parallel with each other. It will be appreciated that in this embodiment, the filament 3 is a tungsten filament.
The filaments 3 are formed by ion etching a part of the metal surface 2, that is, after the metal surface 2 is deposited, ion etching is performed on the metal surface 2, and a plurality of filaments 3 are formed at the bottom of the metal surface 2. The processing difficulty of the filament 3 is lower, and as the filament 3 is formed by etching the metal surface 3, the filament 3 and the rest part of the metal surface 3 are of an integrated structure, the structural strength of the filament 3 is stronger, and the filament has the advantage of being difficult to damage.
The insulating substrate 1 and the metal surface 2 are rectangular, as shown in fig. 1 and 2, the filaments 3 are arranged at intervals along the extending direction of the bottom edge of the metal surface 2, and the extending direction of the filaments 3 is mutually perpendicular to the arranging direction. The emission end of the filament 3 (the free end of the filament 3) emits electrons downward along the extending direction of the filament 3.
Preferably, the plurality of filaments 3 are arranged at equal intervals, whereby the electron emission device can uniformly emit electron beams to the surface of the sample 9, and uniformly collect surface information of the sample 9.
Further, the insulating base 1 is processed with an isolation groove 11 on a side thereof close to the filament 3 by an etching process so as to provide a certain space between at least a portion of the emission end of the filament 3 (free end of the filament 3) and the insulating base 1. Specifically, the filament 3 formed after etching contacts the insulating base 1 toward one side of the insulating base 1, and as shown in fig. 2 and 3, the bottom of one side of the insulating base 1 near the filament 3 is etched to form an isolation groove 11 so that a portion of the filament 3 near the emission end thereof protrudes with respect to the insulating base 1, i.e., is not in contact with the insulating base 1, to form an electron emission source. The part of the insulating substrate 1 corresponding to the isolation groove 11 can isolate the emitting end of the filament 3 from the signal collecting end of the electronic detection device, so that the electronic interference detector signal of transverse sputtering is avoided when the filament 3 emits electrons, and the effect of protecting the emitting end of the filament 3 is also achieved.
In this embodiment, the bottom of the insulating base 1 is located below the bottom of the filament 3, so as to better isolate the filament 3 from the signal collecting end, and avoid interference to the signal collecting process.
Alternatively, the electronic detecting means is connected to the insulating base 1 by an adhesion process.
As shown in fig. 1 and 5, a plurality of isolation layers 4 of the electronic detecting device are stacked one on another in the thickness direction thereof to form a step structure. In the present embodiment, the thickness direction of the spacers 4 and the extending direction of the filaments 3 are parallel to each other, and the number of spacers 4 is equal to the number of filaments 3. The upper surface areas of the isolation layers 4 are sequentially reduced from bottom to top, the isolation layers 4 are overlapped to form a plurality of upward step surfaces, and the arrangement direction of the step surfaces is the same as that of the filaments 3. Each step surface is covered with a corresponding extraction layer 5, the extraction layers 5 are isolated from each other and are not contacted with each other, and the extraction layers 5 are welded with the lead wires. Alternatively, the extraction layer 5 is formed by metal evaporation.
The PN junctions 6 are arranged on the lower surface of the isolation layer 4 at the bottommost layer and are electrically connected with the lead-out layers 5 one by one through the conductive posts 7.
Alternatively, the PN junction 6 is fabricated by a semiconductor doping process, constructed from different doping layers together.
Optionally, a conductive pillar 7 is formed in the isolation layer 4 by means of metal implantation, for extracting signals of the corresponding PN junction 6 to the extraction layer 5. The contact of the conductive post 7 with the extraction layer 5 expands the signal extraction terminal to the surface, facilitating the soldering between the lead and the extraction layer 5.
In the present embodiment, as shown in fig. 6, the PN junction 6 is opposed to the corresponding lead-out layer 5 in the thickness direction of the isolation layer 4, and the conductive post 7 extends in the thickness direction of the isolation layer 4 and penetrates at least one isolation layer 4. And, the projection area of the extraction layer 5 in the thickness direction of the isolation layer 4 is larger than the projection area of the corresponding PN junction 6 in the thickness direction of the isolation layer 4, so that the welding processing of the lead wire is facilitated.
The signal acquisition end of the electronic detection device consists of a PN junction 6 and an electronic receiving layer 8 covering the bottom surface of the PN junction 6. The electron receiving layer 8 is used for receiving electrons and transmitting signals to the PN junction 6, and current is generated by the PN junction 6 and led to the corresponding lead-out layer 5 through the corresponding conductive column 7. The step-shaped layered design among the isolation layers 4 enables the extraction layers 5 to be isolated from each other and not contacted, so that independent extraction of a signal acquisition end is realized, namely, isolation of signals is realized, a PN junction 6 with a small area is converted into the extraction layer 5 with a large area, and welding processing of leads is facilitated.
It is understood that in the present embodiment, the number of filaments 3, the separation layer 4, the extraction layer 5, the PN junction 6, the conductive posts 7, and the electron receiving layer 8 are all equal.
Further, as shown in fig. 2 and 7, the electronic detecting device provided in this embodiment further includes a cushion layer 101 and an electron receiving expansion layer 102. The pad layer 101 is an insulating layer, i.e. the pad layer 101 is not conductive. The pad layer 101 is provided at the bottom of the lowermost spacer layer 4 and may be formed by precipitation at the bottom of the lowermost spacer layer 4. The electron receiving expansion layer 102 is supported by the cushion layer 101, covers a side of the cushion layer 101 away from the isolation layer 4, and is electrically connected to each of the plurality of electron receiving layers 8. The arrangement of the electron receiving expanding layer 102 and the cushion layer 101 greatly increases the electron receiving area of the electron detecting device, and improves the electron detecting efficiency.
In some embodiments, the electron receiving expansion layer 102 may solder the lead-out wire as another lead-out terminal for the signal.
Specifically, as shown in fig. 2, the electron receiving expanding layer 102 is electrically connected to the electron receiving layers 8 through the conductive transition sections 103, and the width of the conductive transition sections 103 is smaller than the width of the electron receiving layers 8. And conductive transition 103 is also in contact with pad layer 101 to support pad layer 101.
In this embodiment, as shown in fig. 2, the electron receiving expansion layer 102, the conductive transition section 103 and the electron receiving layer 8 are integrated as a metal layer.
In the processing of the assembly 100 in this embodiment, a substrate is first deposited on the bottom of the isolation layer 4 at the bottommost layer, and a plurality of PN junctions 6 are directly formed on the substrate by a semiconductor doping process, and the undoped substrate portion becomes a pad layer 101, where the pad layer 101 provides support for the deposition of a subsequent metal layer.
The operation and the principle of the assembly 100 of the electron emission device and the electron detection device according to the embodiment of the present invention are described below with reference to fig. 8 and 9.
As shown in fig. 8, the filament 3 is used as an electron source to emit an electron beam, the electron beam reacts with the sample 10 to excite secondary electrons and back scattered electrons, the secondary electrons and the back scattered electrons are received by the corresponding PN junctions 6 through the electron receiving layer 8, and the impurity electrons are blocked by the insulating substrate 1 to avoid interference signals.
As shown in fig. 9, the filament 3 is numbered a-e, taking filament a as an example, electrons emitted by the filament a are received by the signal acquisition end a, led out to the lead-out layer a 'through the corresponding conductive column 7, led out by the lead electrically connected to the lead-out layer a', and the signal is processed to form a pixel a at the display end. And synchronous multi-point scanning imaging is realized through filaments a-e arranged in an array.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (8)
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| CN202210713908.1A CN115083868B (en) | 2022-06-22 | 2022-06-22 | Electron emission device, electron detection device and combination thereof |
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| CN202210713908.1A CN115083868B (en) | 2022-06-22 | 2022-06-22 | Electron emission device, electron detection device and combination thereof |
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| CN110875165A (en) * | 2018-08-30 | 2020-03-10 | 中国科学院微电子研究所 | Field emission cathode electron source and array thereof |
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| JP2654012B2 (en) * | 1987-05-06 | 1997-09-17 | キヤノン株式会社 | Electron emitting device and method of manufacturing the same |
| JP3639808B2 (en) * | 2000-09-01 | 2005-04-20 | キヤノン株式会社 | Electron emitting device, electron source, image forming apparatus, and method of manufacturing electron emitting device |
| KR20050051818A (en) * | 2003-11-28 | 2005-06-02 | 삼성에스디아이 주식회사 | Field emission display device |
| JP4095610B2 (en) * | 2004-12-28 | 2008-06-04 | キヤノン株式会社 | Electron emitting device, electron source, image display device, and video receiving display device |
| WO2008001805A1 (en) * | 2006-06-28 | 2008-01-03 | Sumitomo Electric Industries, Ltd. | Diamond electron radiation cathode, electron source, electron microscope, and electron beam exposer |
| TWI427659B (en) * | 2010-12-06 | 2014-02-21 | Hon Hai Prec Ind Co Ltd | Electron emitter and electron emitting element |
| CN105374654B (en) * | 2014-08-25 | 2018-11-06 | 同方威视技术股份有限公司 | Electron source, x-ray source, the equipment for having used the x-ray source |
| FR3053830A1 (en) * | 2016-07-07 | 2018-01-12 | Thales | VACUUM CATHODE ELECTRONIC TUBE BASED ON NANOTUBES OR NANOWIAS |
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| US5580467A (en) * | 1995-03-29 | 1996-12-03 | Samsung Display Devices Co., Ltd. | Method of fabricating a field emission micro-tip |
| CN110875165A (en) * | 2018-08-30 | 2020-03-10 | 中国科学院微电子研究所 | Field emission cathode electron source and array thereof |
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