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CN115096965B - Thin film transistor type biochemical sensing microarray chip and preparation method thereof - Google Patents

Thin film transistor type biochemical sensing microarray chip and preparation method thereof Download PDF

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CN115096965B
CN115096965B CN202210606517.XA CN202210606517A CN115096965B CN 115096965 B CN115096965 B CN 115096965B CN 202210606517 A CN202210606517 A CN 202210606517A CN 115096965 B CN115096965 B CN 115096965B
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郭小军
欧阳邦
陈苏杰
宋亚文
沈超超
尹晓宽
唐伟
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Shanghai Jiao Tong University
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    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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Abstract

The thin film transistor type biochemical sensing micro array chip provided by the invention comprises: a substrate; the pixel array comprises a plurality of reference electrodes and a plurality of pixel units, wherein each pixel unit comprises a thin film transistor and a sensitive electrode positioned above the thin film transistor, the bottom gate electrode of the thin film transistor is electrically connected with the sensitive electrode, the surface of the sensitive electrode is provided with a decoration layer, and the reference electrodes are in one-to-one correspondence with the pixel units in a plurality of rows; a plurality of row selection signal lines respectively electrically connected with the reference electrodes; a plurality of column read signal lines; a plurality of common electrode lines; and a plurality of isolation walls positioned above the packaging layer, wherein each isolation wall surrounds an isolation area, and the isolation areas continuously expose all the sensitive electrodes and one reference electrode in one row of pixel units. The invention is beneficial to improving the chip integration level and reducing crosstalk and power consumption.

Description

薄膜晶体管型生化传感微阵列芯片及其制备方法Thin film transistor type biochemical sensing microarray chip and preparation method thereof

技术领域Technical field

本发明涉及传感技术领域,尤其涉及一种薄膜晶体管型生化传感微阵列芯片及其制备方法。The present invention relates to the field of sensing technology, and in particular to a thin film transistor biochemical sensing microarray chip and a preparation method thereof.

背景技术Background technique

在各种电位测量技术中,基于场效应晶体管(Field-Effect Transistor,FET)的传感器由于其具有尺寸小、可并行传感、响应时间短以及与电子制造工艺兼容等优势受到了广泛的关注。在场效应晶体管的基础上衍生出了一些其他类型的离子敏感传感器件,为多种生化传感器提供了一个器件平台并使之得到了显著的发展,广泛应用于食品安全、环境监控、医疗诊断、化学分析、土壤检测等方面。Among various potential measurement technologies, sensors based on field-effect transistors (FETs) have received widespread attention due to their advantages such as small size, parallel sensing, short response time, and compatibility with electronic manufacturing processes. Some other types of ion-sensitive sensing devices have been derived based on field effect transistors, which provide a device platform for a variety of biochemical sensors and have achieved significant development. They are widely used in food safety, environmental monitoring, medical diagnosis, chemistry, etc. analysis, soil testing, etc.

在电化学传感芯片技术中,目前国内外很多研究机构和企业通过CMOS(Complementary Metal-Oxide-Semiconductor,互补金属氧化物半导体)集成电路工艺设计实现了各种微阵列芯片的集成检测。然而采用硅基CMOS工艺实现传感芯片的制备不仅具有成本高、可定制性差等工艺方面的不足,而且难以兼容于多种传感前端的集成,并且封装工艺也较为复杂。薄膜晶体管由于制造成本低、设计周期短,可利用溶液法制备,可与多种传感材料直接集成等优势,得到了大量应用研究。随着物联网的发展,传感器的数量大大增加,低功耗多传感芯片将成为电化学传感未来发展的趋势。目前大多数工作都是将有限的传感器进行集成。集成阵列为实现多传感应用提供了一种可行的技术方案。因此,系统需要多路选通模块从每个单元像素获取信号。而目前的方案都至少包含2个晶体管,其中一个晶体管用于开关选通,另一个晶体管用于与传感器集成以处理传感信号。但是,2个晶体管的方案不仅会造成芯片体积的增大,而且易出现漏电、串扰、功耗高等问题,从而影响芯片的性能。In electrochemical sensing chip technology, many domestic and foreign research institutions and enterprises have implemented integrated detection of various microarray chips through CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) integrated circuit process design. However, the use of silicon-based CMOS technology to prepare sensor chips not only has process deficiencies such as high cost and poor customizability, but is also difficult to be compatible with the integration of multiple sensing front-ends, and the packaging process is also relatively complex. Thin film transistors have received a lot of application research due to their low manufacturing cost, short design cycle, preparation by solution method, and direct integration with a variety of sensing materials. With the development of the Internet of Things, the number of sensors has greatly increased, and low-power multi-sensor chips will become the future development trend of electrochemical sensing. Most current work involves integrating limited sensors. Integrated arrays provide a feasible technical solution for realizing multi-sensing applications. Therefore, the system requires multiple gating modules to obtain signals from each unit pixel. Current solutions include at least two transistors, one of which is used for switching gating, and the other is used to integrate with the sensor to process the sensing signal. However, the two-transistor solution will not only increase the size of the chip, but is also prone to problems such as leakage, crosstalk, and high power consumption, thus affecting the performance of the chip.

因此,如何减小传感芯片的尺寸,同时改善传感芯片的性能,扩展传感芯片的应用领域,是目前亟待解决的技术问题。Therefore, how to reduce the size of the sensor chip, improve the performance of the sensor chip, and expand the application field of the sensor chip is an urgent technical problem that needs to be solved.

发明内容Contents of the invention

本发明提供一种薄膜晶体管型生化传感微阵列芯片及其制备方法,用于解决现有的传感芯片尺寸较大的问题,并改善传感芯片的性能,扩展传感芯片的应用领域。The invention provides a thin film transistor type biochemical sensing microarray chip and a preparation method thereof, which are used to solve the problem of large size of existing sensing chips, improve the performance of the sensing chip, and expand the application field of the sensing chip.

为了解决上述问题,本发明提供了一种薄膜晶体管型生化传感微阵列芯片,包括:In order to solve the above problems, the present invention provides a thin film transistor biochemical sensing microarray chip, including:

衬底;substrate;

像素阵列,位于所述衬底上,包括多个参比电极、以及呈列阵列排布的多个像素单元,所述像素单元包括薄膜晶体管和位于所述薄膜晶体管上方的敏感电极,所述薄膜晶体管包括底栅电极、覆盖所述底栅电极的底栅绝缘层、位于所述底栅绝缘层表面的源电极和漏电极、覆盖所述源电极和所述漏电极的半导体层、覆盖所述半导体层的封装层,所述底栅电极电连接所述敏感电极,所述敏感电极表面具有修饰层,多个所述参比电极与多行所述像素单元一一对应;A pixel array, located on the substrate, includes a plurality of reference electrodes and a plurality of pixel units arranged in an array. The pixel unit includes a thin film transistor and a sensitive electrode located above the thin film transistor. The thin film The transistor includes a bottom gate electrode, a bottom gate insulating layer covering the bottom gate electrode, a source electrode and a drain electrode located on the surface of the bottom gate insulating layer, a semiconductor layer covering the source electrode and the drain electrode, and a semiconductor layer covering the source electrode and the drain electrode. The encapsulation layer of the semiconductor layer, the bottom gate electrode is electrically connected to the sensitive electrode, the surface of the sensitive electrode has a modification layer, and a plurality of the reference electrodes correspond to multiple rows of the pixel units in one-to-one correspondence;

多条行选信号线,位于所述衬底上,多条所述行选信号线分别与多个所述参比电极电连接;A plurality of row selection signal lines are located on the substrate, and the plurality of row selection signal lines are electrically connected to a plurality of reference electrodes respectively;

多条列读取信号线,位于所述衬底上,每列所述像素单元中的所述漏电极均连接同一条所述列读取信号线;A plurality of column read signal lines are located on the substrate, and the drain electrodes in the pixel units in each column are connected to the same column read signal line;

多条公共电极线,位于所述衬底上,每条所述公共电极线连接每列所述像素单元中所有的所述源电极;A plurality of common electrode lines located on the substrate, each common electrode line connecting all the source electrodes in the pixel units in each column;

多个隔离墙,每个所述隔离墙连续分布于一行所述像素单元的所有所述封装层上方,每个所述隔离墙包围一隔离区域,所述隔离区域连续暴露一行所述像素单元中所有的所述敏感电极、以及与一行所述像素单元对应的一个所述参比电极。A plurality of isolation walls, each of which is continuously distributed over all the encapsulation layers of a row of pixel units, and each of the isolation walls surrounds an isolation area, and the isolation area is continuously exposed to a row of the pixel units. All the sensitive electrodes and one reference electrode corresponding to one row of pixel units.

可选的,所述参比电极包括Ag/AgCl电极、以及含有饱和氯盐的多孔聚合物膜。Optionally, the reference electrode includes an Ag/AgCl electrode and a porous polymer membrane containing saturated chlorine salt.

可选的,所述氯盐为氯化钠或氯化钾,所述多孔聚合物膜的材料为聚氯乙烯或聚乙烯醇缩丁醛或为聚乙烯醇缩丁醛与聚氧化乙烯-聚氧化丙烯-聚氧化乙烯三嵌段共聚物的共混材料。Optionally, the chloride salt is sodium chloride or potassium chloride, and the porous polymer membrane is made of polyvinyl chloride or polyvinyl butyral or polyvinyl butyral and polyethylene oxide-polymer. Blend material of propylene oxide-polyoxyethylene triblock copolymer.

可选的,所述底栅电极、所述源电极、所述漏电极、所述行选信号线、所述列读取信号线、所述公共电极线的材料均为导电聚合物、碳基导电物、金属、金属氧化物、金属纳米线、金属或者金属氧化物纳米颗粒。Optionally, the bottom gate electrode, the source electrode, the drain electrode, the row selection signal line, the column read signal line, and the common electrode line are all made of conductive polymer, carbon-based Conductors, metals, metal oxides, metal nanowires, metal or metal oxide nanoparticles.

可选的,所述半导体层的材料为无机材料、有机小分子半导体材料、聚合物半导体材料、或者小分子半导体材料-聚合物绝缘材料混合体系。Optionally, the material of the semiconductor layer is an inorganic material, an organic small molecule semiconductor material, a polymer semiconductor material, or a small molecule semiconductor material-polymer insulating material hybrid system.

可选的,所述半导体层覆盖部分的所述源电极、部分的所述漏电极、以及所述源电极与所述漏电极之间的所述底栅绝缘层,所述封装层覆盖所述半导体层、部分的所述源电极、部分的所述漏电极和所述底栅绝缘层;所述薄膜晶体管还包括:Optionally, the semiconductor layer covers part of the source electrode, part of the drain electrode, and the bottom gate insulating layer between the source electrode and the drain electrode, and the encapsulation layer covers the A semiconductor layer, a portion of the source electrode, a portion of the drain electrode and the bottom gate insulating layer; the thin film transistor further includes:

导电互联层,贯穿所述封装层和部分的所述底栅绝缘层,所述导电互联层的一端电连接所述底栅电极、另一端电连接所述敏感电极。A conductive interconnection layer penetrates the encapsulation layer and part of the bottom gate insulating layer. One end of the conductive interconnection layer is electrically connected to the bottom gate electrode, and the other end is electrically connected to the sensitive electrode.

可选的,多个所述像素单元沿第一方向和第二方向呈阵列排布,沿第一方向间隔排布的多个所述像素单元作为一行所述像素单元,所述第一方向和所述第二方向均为平行于所述衬底的顶面的方向,且所述第一方向与所述第二方向相交;Optionally, a plurality of the pixel units are arranged in an array along the first direction and the second direction, and the plurality of pixel units arranged at intervals along the first direction serve as a row of pixel units, and the first direction and The second directions are all directions parallel to the top surface of the substrate, and the first direction intersects the second direction;

每个所述参比电极沿所述第一方向位于一行所述像素单元的外部,且多个所述参比电极沿所述第二方向间隔排布。Each of the reference electrodes is located outside a row of pixel units along the first direction, and a plurality of the reference electrodes are arranged at intervals along the second direction.

可选的,所述修饰层的材料为环己酮、聚氯乙烯、四(3,5-二(三氟甲基)苯基)硼酸钾、四[3,5-双(三氟甲基)苯基]硼酸钠、双(2-乙基己基)癸二酸酯、离子载体、生化敏感材料、或者生物敏感材料。Optionally, the material of the modification layer is cyclohexanone, polyvinyl chloride, potassium tetrakis(3,5-bis(trifluoromethyl)phenyl)borate, tetrakis[3,5-bis(trifluoromethyl) ) phenyl] sodium borate, bis(2-ethylhexyl) sebacate, ionophore, biochemically sensitive materials, or biologically sensitive materials.

可选的,所述隔离墙的材料为疏水性材料。Optionally, the material of the isolation wall is a hydrophobic material.

为了解决上述问题,本发明还提供了一种薄膜晶体管型生化传感微阵列芯片的制备方法,包括如下步骤:In order to solve the above problems, the present invention also provides a method for preparing a thin film transistor type biochemical sensing microarray chip, which includes the following steps:

提供衬底;Provide a substrate;

形成像素阵列、多条行选信号线、多条列读取信号线和多条公共电极线于所述衬底的顶面上,所述像素阵列包括多个参比电极、以及呈列阵列排布的多个像素单元,所述像素单元包括薄膜晶体管和位于所述薄膜晶体管上方的敏感电极,所述薄膜晶体管包括底栅电极、覆盖所述底栅电极的底栅绝缘层、位于所述底栅绝缘层表面的源电极和漏电极、覆盖所述源电极和所述漏电极的半导体层、覆盖所述半导体层的封装层,所述底栅电极电连接所述敏感电极,所述敏感电极表面具有修饰层,多个所述参比电极与多行所述像素单元一一对应,多条所述行选信号线分别与多个所述参比电极电连接,每列所述像素单元中的所述漏电极均连接同一条所述列读取信号线,每条所述公共电极线连接每列所述像素单元中所有的所述源电极;A pixel array, a plurality of row selection signal lines, a plurality of column read signal lines and a plurality of common electrode lines are formed on the top surface of the substrate. The pixel array includes a plurality of reference electrodes and are arranged in a column array. A plurality of pixel units are arranged, and the pixel unit includes a thin film transistor and a sensitive electrode located above the thin film transistor. The thin film transistor includes a bottom gate electrode, a bottom gate insulating layer covering the bottom gate electrode, and a sensitive electrode located above the bottom gate electrode. The source electrode and the drain electrode on the surface of the gate insulating layer, the semiconductor layer covering the source electrode and the drain electrode, the encapsulation layer covering the semiconductor layer, the bottom gate electrode is electrically connected to the sensitive electrode, and the sensitive electrode The surface has a modification layer, a plurality of the reference electrodes correspond to a plurality of rows of the pixel units, a plurality of the row selection signal lines are electrically connected to a plurality of the reference electrodes respectively, and the pixel units in each column are The drain electrodes are all connected to the same column read signal line, and each common electrode line is connected to all the source electrodes in the pixel units in each column;

形成多个隔离墙于所述像素阵列上方,每个所述隔离墙连续分布于一行所述像素单元的所有所述封装层上方,每个所述隔离墙包围一隔离区域,所述隔离区域连续暴露一行所述像素单元中所有的所述敏感电极、以及与一行所述像素单元对应的一个所述参比电极。A plurality of isolation walls are formed above the pixel array, each of the isolation walls is continuously distributed over all the packaging layers of the pixel unit in a row, each of the isolation walls surrounds an isolation area, and the isolation area is continuously All the sensitive electrodes in one row of the pixel units and one of the reference electrodes corresponding to one row of the pixel units are exposed.

本发明提供的薄膜晶体管型生化传感微阵列芯片及其制备方法,在像素阵列的每个像素单元中仅设置一个薄膜晶体管,将像素单元的开关功能和传感功能集成在同一个薄膜晶体管中,从而可以通过减小每个像素单元的尺寸来降低整个薄膜晶体管型生化传感微阵列芯片的尺寸。而且,由于仅设置一个薄膜晶体管,因而能够减少薄膜晶体管型生化传感微阵列芯片的漏电、串扰等问题,并有助于降低薄膜晶体管型生化传感微阵列芯片的功耗,从而改善传感芯片的性能,扩展传感芯片的应用领域。The invention provides a thin film transistor biochemical sensing microarray chip and a preparation method thereof. Only one thin film transistor is provided in each pixel unit of the pixel array, and the switching function and sensing function of the pixel unit are integrated into the same thin film transistor. , thereby reducing the size of the entire thin film transistor-type biochemical sensing microarray chip by reducing the size of each pixel unit. Moreover, since only one thin film transistor is provided, it can reduce leakage, crosstalk and other problems of the thin film transistor type biochemical sensing microarray chip, and help reduce the power consumption of the thin film transistor type biochemical sensing microarray chip, thereby improving sensing. The performance of the chip expands the application fields of sensing chips.

本发明提供的薄膜晶体管型生化传感微阵列芯片可以与RFID(射频识别)系统结合,可通过手机天线耦合,并进行整流稳压,实现无源供电,同时可通过DAC(数-模转换)模块给偏置电压,ADC(模-数转换)通过电流电压转换后进行读取,仅包括一个薄膜晶体管的像素单元结构有利于多传感多位点检测,整体系统可实现低电压低功耗工作。此外,采用薄膜晶体管形成的像素阵列与衬底(例如柔性衬底)兼容,能够实现与皮肤等柔性表面的共形和紧密贴合,从而保证了信号检测的稳定可靠,显著降低噪声,有望应用于可穿戴汗液检测等领域。而多样化的材料选择(例如半导体材料、封装层材料、底栅绝缘层材料等),以及灵活的工艺优化,使得其应对多样化的传感需求,具有更短的设计到产品产出周期。The thin film transistor type biochemical sensing microarray chip provided by the invention can be combined with an RFID (radio frequency identification) system, can be coupled through a mobile phone antenna, and can be rectified and stabilized to achieve passive power supply. At the same time, it can be powered by a DAC (digital-to-analog conversion). The module provides a bias voltage, and the ADC (analog-to-digital conversion) reads the current and voltage after conversion. The pixel unit structure including only one thin film transistor is conducive to multi-sensing and multi-site detection, and the overall system can achieve low voltage and low power consumption. Work. In addition, the pixel array formed by thin film transistors is compatible with substrates (such as flexible substrates) and can achieve conformal and close fit with flexible surfaces such as skin, thereby ensuring stable and reliable signal detection, significantly reducing noise, and is expected to be used in in wearable sweat detection and other fields. The diverse material selection (such as semiconductor materials, packaging layer materials, bottom gate insulating layer materials, etc.) and flexible process optimization enable it to cope with diverse sensing needs and have a shorter design-to-product production cycle.

附图说明Description of the drawings

附图1是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片的结构示意图;Figure 1 is a schematic structural diagram of a thin film transistor type biochemical sensing microarray chip in a specific embodiment of the present invention;

附图2是本发明具体实施方式中薄膜晶体管的结构示意图;Figure 2 is a schematic structural diagram of a thin film transistor in a specific embodiment of the present invention;

附图3是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片与RFID结合之后的结构示意图;Figure 3 is a schematic structural diagram of a thin film transistor biochemical sensing microarray chip combined with RFID in a specific embodiment of the present invention;

附图4是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片的制备方法流程图。Figure 4 is a flow chart of a method for preparing a thin film transistor-type biochemical sensing microarray chip in a specific embodiment of the present invention.

具体实施方式Detailed ways

下面结合附图对本发明提供的薄膜晶体管型生化传感微阵列芯片及其制备方法的具体实施方式做详细说明。The specific embodiments of the thin film transistor type biochemical sensing microarray chip and its preparation method provided by the present invention will be described in detail below with reference to the accompanying drawings.

本具体实施方式提供了一种薄膜晶体管型生化传感微阵列芯片,附图1是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片的结构示意图,附图2是本发明具体实施方式中薄膜晶体管的结构示意图。如图1和图2所示,所述薄膜晶体管型生化传感微阵列芯片,包括:This specific embodiment provides a thin film transistor type biochemical sensing microarray chip. Figure 1 is a schematic structural diagram of the thin film transistor type biochemical sensing microarray chip in the specific implementation of the present invention. Figure 2 is a specific implementation of the present invention. Schematic diagram of the structure of a medium thin film transistor. As shown in Figures 1 and 2, the thin film transistor biochemical sensing microarray chip includes:

衬底20;substrate 20;

像素阵列,位于所述衬底20上,包括多个参比电极10、以及呈列阵列排布的多个像素单元19,所述像素单元19包括薄膜晶体管和位于所述薄膜晶体管上方的敏感电极28,所述薄膜晶体管包括底栅电极21、覆盖所述底栅电极21的底栅绝缘层22、位于所述底栅绝缘层22表面的源电极23和漏电极24、覆盖所述源电极23和所述漏电极24的半导体层25、覆盖所述半导体层25的封装层26,所述底栅电极21电连接所述敏感电极28,所述敏感电极28表面具有修饰层29,多个所述参比电极10与多行所述像素单元19一一对应;The pixel array is located on the substrate 20 and includes a plurality of reference electrodes 10 and a plurality of pixel units 19 arranged in a column array. The pixel units 19 include thin film transistors and sensitive electrodes located above the thin film transistors. 28. The thin film transistor includes a bottom gate electrode 21, a bottom gate insulating layer 22 covering the bottom gate electrode 21, a source electrode 23 and a drain electrode 24 located on the surface of the bottom gate insulating layer 22, covering the source electrode 23 and the semiconductor layer 25 of the drain electrode 24 and the encapsulation layer 26 covering the semiconductor layer 25. The bottom gate electrode 21 is electrically connected to the sensitive electrode 28. The surface of the sensitive electrode 28 has a modification layer 29, and a plurality of The reference electrode 10 corresponds to multiple rows of the pixel units 19 in a one-to-one correspondence;

多条行选信号线14,位于所述衬底20上,多条所述行选信号线14分别与多个所述参比电极10电连接;A plurality of row selection signal lines 14 are located on the substrate 20, and the plurality of row selection signal lines 14 are electrically connected to a plurality of reference electrodes 10 respectively;

多条列读取信号线11,位于所述衬底20上,每列所述像素单元19中的所述漏电极24均连接同一条所述列读取信号线11;A plurality of column read signal lines 11 are located on the substrate 20, and the drain electrodes 24 in each column of the pixel units 19 are connected to the same column read signal line 11;

多条公共电极线12,位于所述衬底20上,每条所述公共电极线12连接每列所述像素单元19中所有的所述源电极23;A plurality of common electrode lines 12 are located on the substrate 20, and each common electrode line 12 connects all the source electrodes 23 in each column of the pixel units 19;

多个隔离墙13,每个所述隔离墙连续分布于一行所述像素单元的所有所述封装层上方,每个所述隔离墙13包围一隔离区域131,所述隔离区域131连续暴露一行所述像素单元19中所有的所述敏感电极28、以及与一行所述像素单元19对应的一个所述参比电极10。A plurality of isolation walls 13, each of which is continuously distributed over all the encapsulation layers of a row of pixel units, each of the isolation walls 13 surrounds an isolation area 131, and the isolation area 131 continuously exposes all the packaging layers of a row of pixel units. All the sensitive electrodes 28 in the pixel units 19 and one reference electrode 10 corresponding to one row of the pixel units 19.

具体来说,多个所述像素单元19在所述衬底20的顶面上沿第一方向D1和第二方向D2呈二维阵列排布,以构成所述像素阵列。其中,所述第一方向D1可以为所述像素阵列的行方向,所述第二方向D2可以为所述像素阵列的列方向。每个所述像素单元19仅包括一个所述薄膜晶体管。如图2所示,所述薄膜晶体管包括位于所述衬底20的顶面上的所述底栅电极21、覆盖所述底栅电极21的所述底栅绝缘层22、位于所述底栅绝缘22表面的所述源电极23和所述漏电极24、覆盖部分所述源电极23、以及所述源电极23和所述漏电极24之间的间隙区域的所述半导体层25、覆盖所述半导体层25、部分所述源电极23、部分所述漏电极24、以及部分所述底栅绝缘层22的所述封装层26。位于同一个所述像素单元19内的所述底栅电极21与所述敏感电极28电连接。多个所述参比电极10与多行所述像素单元19一一对应,即每行所述像素单元19共用同一个所述参比电极10。其中,所述第一方向D1和所述第二方向D2均为平行于所述衬底20的顶面的方向,且所述第一方向D1与所述第二方向D2相交。本具体实施方式中所述的相交可以是垂直相交,也可以是倾斜相交。Specifically, a plurality of the pixel units 19 are arranged in a two-dimensional array along the first direction D1 and the second direction D2 on the top surface of the substrate 20 to form the pixel array. The first direction D1 may be a row direction of the pixel array, and the second direction D2 may be a column direction of the pixel array. Each pixel unit 19 includes only one thin film transistor. As shown in FIG. 2 , the thin film transistor includes the bottom gate electrode 21 on the top surface of the substrate 20 , the bottom gate insulating layer 22 covering the bottom gate electrode 21 , and the bottom gate electrode 21 on the top surface of the substrate 20 . The source electrode 23 and the drain electrode 24 on the surface of the insulator 22, the semiconductor layer 25 covering part of the source electrode 23, and the gap area between the source electrode 23 and the drain electrode 24, covering all The semiconductor layer 25 , a portion of the source electrode 23 , a portion of the drain electrode 24 , and a portion of the encapsulation layer 26 of the bottom gate insulating layer 22 . The bottom gate electrode 21 located in the same pixel unit 19 is electrically connected to the sensitive electrode 28 . Multiple reference electrodes 10 correspond to multiple rows of pixel units 19 in a one-to-one correspondence, that is, each row of pixel units 19 shares the same reference electrode 10 . The first direction D1 and the second direction D2 are both directions parallel to the top surface of the substrate 20 , and the first direction D1 and the second direction D2 intersect. The intersection described in this specific embodiment may be a vertical intersection or an oblique intersection.

所述薄膜晶体管型生化传感微阵列芯片还包括通道选择电路17、以及多条所述行选信号线14,每条所述行选信号线14的一端电连接所述通道选择电路17、另一端连接一个所述参比电极10。每个所述隔离墙13连续分布于一行所述像素单元19的所有所述封装层26上方,且每个所述隔离墙13包围连续暴露一行所述像素单元19中所有的所述敏感电极28、以及与一行所述像素单元19对应的一个所述参比电极10的一个所述隔离区域131,即所述隔离墙13成围框状,以包围所述隔离区域131内的一行所述像素单元19的所有所述敏感电极28和一个所述参比电极10。在对待测溶液进行测试时,相邻两行的所述像素单元19通过所述隔离墙13相互隔离,且所述待测溶液被置于一个所述隔离墙13中的所述隔离区域131内,通过所述隔离区域131暴露的所述参比电极10和所述敏感电极28通过所述待测溶液形成导电通路,以实现对所述待测溶液的检测。The thin film transistor type biochemical sensing microarray chip also includes a channel selection circuit 17 and a plurality of row selection signal lines 14. One end of each row selection signal line 14 is electrically connected to the channel selection circuit 17 and the other end. One end is connected to one of the reference electrodes 10 . Each isolation wall 13 is continuously distributed over all the encapsulation layers 26 of the pixel units 19 in a row, and each isolation wall 13 surrounds and continuously exposes all the sensitive electrodes 28 in the pixel units 19 in a row. , and one isolation area 131 of one reference electrode 10 corresponding to one row of pixel units 19, that is, the isolation wall 13 is in a frame shape to surround one row of pixels in the isolation area 131. All of the sensitive electrodes 28 of the unit 19 and one of the reference electrodes 10 . When testing the solution to be tested, the pixel units 19 in two adjacent rows are isolated from each other by the isolation wall 13 , and the solution to be tested is placed in the isolation area 131 in one of the isolation walls 13 , the reference electrode 10 and the sensitive electrode 28 exposed through the isolation area 131 form a conductive path through the solution to be tested, so as to realize the detection of the solution to be tested.

所述薄膜晶体管型生化传感微阵列芯片还包括读取电路15、以及均与所述读取电路15电连接的多条所述列读取信号线11,每列所述像素单元19中的所述漏电极24均连接同一条所述列读取信号线11。所述薄膜晶体管型生化传感微阵列芯片还包括电源电路16、以及均与所述电源电路16连接的多条所述公共电极线12,每条所述公共电极线12连接每列所述像素单元19中所有的所述源电极23。The thin film transistor type biochemical sensing microarray chip also includes a reading circuit 15 and a plurality of column reading signal lines 11 electrically connected to the reading circuit 15. The pixel units 19 in each column The drain electrodes 24 are all connected to the same column read signal line 11 . The thin film transistor type biochemical sensing microarray chip also includes a power supply circuit 16 and a plurality of common electrode lines 12 connected to the power supply circuit 16. Each of the common electrode lines 12 is connected to the pixels in each column. All said source electrodes 23 in unit 19.

所述薄膜晶体管型生化传感微阵列芯片中还可以包括控制电路18,所述控制电路18可以电连接所述读取电路15和所述通道选择电路17,从而可以通过所述控制电路18向所述读取电路15和所述通道选择电路17传输控制信号,以控制所述像素阵列中每个所述像素单元19的工作状态。所述工作状态包括开启状态和关闭状态。The thin film transistor type biochemical sensing microarray chip may also include a control circuit 18. The control circuit 18 may be electrically connected to the reading circuit 15 and the channel selection circuit 17, so that the control circuit 18 can The reading circuit 15 and the channel selection circuit 17 transmit control signals to control the working state of each pixel unit 19 in the pixel array. The working state includes an open state and a closed state.

可选的,所述参比电极10包括Ag/AgCl电极、以及含有饱和氯盐的多孔聚合物膜。Optionally, the reference electrode 10 includes an Ag/AgCl electrode and a porous polymer membrane containing saturated chlorine salt.

可选的,所述氯盐为氯化钠或氯化钾,所述多孔聚合物膜的材料为聚氯乙烯(poly(vinyl chloride),PVC)或聚乙烯醇缩丁醛(polyvinyl butyral,PVB)或为聚乙烯醇缩丁醛与聚氧化乙烯-聚氧化丙烯-聚氧化乙烯三嵌段共聚物((polyvinyl butyral,PVB))的共混材料。Optionally, the chloride salt is sodium chloride or potassium chloride, and the porous polymer membrane is made of polyvinyl chloride (poly(vinyl chloride), PVC) or polyvinyl butyral (polyvinyl butyral, PVB). ) or a blend material of polyvinyl butyral and polyoxyethylene-polyoxypropylene-polyoxyethylene triblock copolymer (polyvinyl butyral, PVB).

可选的,所述底栅电极21、所述源电极23、所述漏电极24、所述行选信号线14、所述列读取信号线11、所述公共电极线12的材料均为导电聚合物、碳基导电物、金属、金属氧化物、金属纳米线、金属或者金属氧化物纳米颗粒。Optionally, the bottom gate electrode 21, the source electrode 23, the drain electrode 24, the row selection signal line 14, the column read signal line 11, and the common electrode line 12 are all made of Conductive polymers, carbon-based conductors, metals, metal oxides, metal nanowires, metal or metal oxide nanoparticles.

可选的,所述底栅绝缘层22的材料包括但不限于绝缘材料(例如氧化物材料或者氮化物材料)、以及聚合物介电材料等。Optionally, the material of the bottom gate insulating layer 22 includes but is not limited to insulating materials (such as oxide materials or nitride materials), polymer dielectric materials, and the like.

可选的,所述半导体层25的材料为无机材料、有机小分子半导体材料、聚合物半导体材料、或者小分子半导体材料-聚合物绝缘了混合体系材料。Optionally, the material of the semiconductor layer 25 is an inorganic material, an organic small molecule semiconductor material, a polymer semiconductor material, or a small molecule semiconductor material-polymer insulated hybrid system material.

具体来说,所述半导体层25的材料可以包括无机材料但不限于如III-V族半导体材料,或有机小分子、聚合物中的一种或两种,或所述薄膜晶体管的半导体层的材料包括有机小分子或者聚合物与绝缘聚合物共混的材料,或均为由有机小分子与高分子聚合物形成的共混物。其中,所述有机小分子可以是但不限于6,13-双(三异丙基硅烷基乙炔基)并五苯(6,13-bis(triisopropylsilylethynyl)-pentacene,TIPS-pentacene)、三乙基甲硅烷基乙炔基取代双噻吩蒽(bis(triethyl-silyle-thynyl)anthradithiophene,TES-ADT)或2,7-二苯基[1]苯并噻吩[3,2-b][1]苯并噻吩(2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene,C8BTBT);所述高分子聚合物可以采用但不限于聚苯乙烯(polystyrene,PS)、聚(三芳胺)(poly(triarylamine),PTAA)或聚甲基丙烯酸甲酯(poly(methylmethacrylate),PMMA)。Specifically, the material of the semiconductor layer 25 may include inorganic materials but is not limited to group III-V semiconductor materials, or one or both of organic small molecules and polymers, or the semiconductor layer of the thin film transistor. The materials include blends of small organic molecules or polymers and insulating polymers, or blends of small organic molecules and high molecular polymers. Wherein, the organic small molecule may be, but is not limited to, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), triethyl Bis(triethyl-silyle-thynyl)anthradithiophene (TES-ADT) or 2,7-diphenyl[1]benzothiophene[3,2-b][1]benzo Thiophene (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, C8BTBT); the polymer can be, but is not limited to, polystyrene (polystyrene, PS), poly(triarylamine) ) (poly(triarylamine), PTAA) or poly(methylmethacrylate), PMMA).

可选的,所述半导体层25覆盖部分的所述源电极23、部分的所述漏电极24、以及所述源电极23与所述漏电极24之间的所述底栅绝缘层22,所述封装层26覆盖所述半导体层25、部分的所述源电极23、部分的所述漏电极24和所述底栅绝缘层22;所述薄膜晶体管还包括:Optionally, the semiconductor layer 25 covers part of the source electrode 23, part of the drain electrode 24, and the bottom gate insulating layer 22 between the source electrode 23 and the drain electrode 24, so The encapsulation layer 26 covers the semiconductor layer 25, part of the source electrode 23, part of the drain electrode 24 and the bottom gate insulating layer 22; the thin film transistor also includes:

导电互连层27,贯穿所述封装层26和部分的所述底栅绝缘层22,所述导电互连层27的一端电连接所述底栅电极21、另一端电连接所述敏感电极28。其中,所述导电互连层27的材料为导电聚合物、碳基导电物、金属、金属氧化物、金属纳米线、金属或者金属氧化物纳米颗粒。Conductive interconnection layer 27 penetrates the encapsulation layer 26 and part of the bottom gate insulating layer 22. One end of the conductive interconnection layer 27 is electrically connected to the bottom gate electrode 21, and the other end is electrically connected to the sensitive electrode 28. . Wherein, the material of the conductive interconnection layer 27 is conductive polymer, carbon-based conductive material, metal, metal oxide, metal nanowire, metal or metal oxide nanoparticles.

其中,所述导电互连层27可以是采用激光过孔、机械穿孔和喷墨打印等方式形成贯穿所述封装层26和部分的所述底栅绝缘层22的通孔之后,向所述通孔内填充导电材料形成。Wherein, the conductive interconnection layer 27 may be formed by using laser vias, mechanical perforations, inkjet printing, etc. to form through-holes penetrating the encapsulation layer 26 and part of the bottom gate insulating layer 22, and then to the through-holes. The holes are filled with conductive material.

可选的,多个所述像素单元19沿第一方向D1和第二方向D2呈阵列排布,沿所述第一方向D1间隔排布的多个所述像素单元19作为一行所述像素单元,所述第一方向D1和所述第二方向D2均为平行于所述衬底20的顶面的方向,且所述第一方向D1与所述第二方向D2相交;Optionally, a plurality of the pixel units 19 are arranged in an array along the first direction D1 and the second direction D2, and the plurality of pixel units 19 arranged at intervals along the first direction D1 serve as a row of pixel units. , the first direction D1 and the second direction D2 are both directions parallel to the top surface of the substrate 20, and the first direction D1 intersects the second direction D2;

每个所述参比电极10沿所述第一方向D1位于一行所述像素单元19的外部,且多个所述参比电极10沿所述第二方向D2间隔排布。Each reference electrode 10 is located outside a row of pixel units 19 along the first direction D1, and a plurality of the reference electrodes 10 are arranged at intervals along the second direction D2.

具体来说,每个所述参比电极10沿所述第一方向D1排布于与其对应的一行所述像素单元19的外侧,且多个所述参比电极10沿所述第二方向D2平行且间隔排布,以提高所述衬底20顶面的空间利用率,且有助于简化所述薄膜晶体管型生化传感微阵列芯片内部的电路结构。Specifically, each reference electrode 10 is arranged outside its corresponding row of pixel units 19 along the first direction D1, and a plurality of the reference electrodes 10 is arranged along the second direction D2. They are arranged in parallel and spaced apart to improve the space utilization on the top surface of the substrate 20 and to help simplify the circuit structure inside the thin film transistor type biochemical sensing microarray chip.

可选的,所述修饰层29的材料为环己酮、聚氯乙烯、四(3,5-二(三氟甲基)苯基)硼酸钾、四[3,5-双(三氟甲基)苯基]硼酸钠、双(2-乙基己基)癸二酸酯、离子载体、生化敏感材料、或者生物敏感材料。Optionally, the material of the modification layer 29 is cyclohexanone, polyvinyl chloride, potassium tetrakis(3,5-bis(trifluoromethyl)phenyl)borate, tetrakis[3,5-bis(trifluoromethyl) [ethyl]phenyl] sodium borate, bis(2-ethylhexyl) sebacate, ionophore, biochemically sensitive materials, or biologically sensitive materials.

具体来说,所述敏感电极28的表面可通过修饰生物探针或者修饰离子选择膜来形成所述修饰层29,从而产生对目标检测物的特异性。所述敏感电极28表面的所述修饰层29的材料包括但不限于环己酮(C6H10O),聚氯乙烯(PVC),四(3,5-二(三氟甲基)苯基)硼酸钾(KTFPB),四[3,5-双(三氟甲基)苯基]硼酸钠(Na-TFPB),双(2-乙基己基)癸二酸酯(DOS),钾离子载体(缬氨霉素等)、钠离子载体、铵根离子载体等离子载体,聚苯胺(PANI)、聚吡咯(PPy)、石墨烯、碳纳米管等生化敏感材料,核酸适配体、抗体、抗原等生物敏感材料。Specifically, the surface of the sensitive electrode 28 can be modified by modifying a biological probe or an ion-selective membrane to form the modification layer 29, thereby generating specificity for the target detection substance. The materials of the modification layer 29 on the surface of the sensitive electrode 28 include but are not limited to cyclohexanone (C6H10O), polyvinyl chloride (PVC), and potassium tetrakis(3,5-di(trifluoromethyl)phenyl)borate. (KTFPB), sodium tetrakis[3,5-bis(trifluoromethyl)phenyl]borate (Na-TFPB), bis(2-ethylhexyl)sebacate (DOS), potassium ionophore (valine (mycin, etc.), sodium ionophores, ammonium ionophores and other ionophores, polyaniline (PANI), polypyrrole (PPy), graphene, carbon nanotubes and other biochemical sensitive materials, nucleic acid aptamers, antibodies, antigens and other biologically sensitive materials Material.

可选的,所述隔离墙13的材料为疏水性材料。其中,所述疏水性材料可以是但不限于硅酮胶、PDMS(聚二甲基硅氧烷)等。Optionally, the material of the isolation wall 13 is a hydrophobic material. The hydrophobic material may be, but is not limited to, silicone glue, PDMS (polydimethylsiloxane), etc.

所述封装层26的材料可以是但不限于金属氧化物、高性能聚合物等。在一示例中,所述封装层26的材料为CYTOP(非晶含氟树脂)。The material of the encapsulation layer 26 may be, but is not limited to, metal oxide, high-performance polymer, etc. In one example, the material of the encapsulation layer 26 is CYTOP (amorphous fluorine-containing resin).

附图3是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片与RFID结合之后的结构示意图。本具体实施方式提供的薄膜晶体管型生化传感微阵列芯片可以与RFID系统结合。如图3所示,在所述薄膜晶体管型生化传感微阵列芯片与射频识别结构32结合后,所述薄膜晶体管型生化传感微阵列芯片中的每行所述像素单元19中的所有所述敏感电极28与一个所述参比电极10通过位于所述隔离区域131内的待测溶液接触形成电气连通。所述薄膜晶体管型生化传感微阵列芯片与所述射频识别结构32结合工作时,移动终端30与所述射频识别结构32中的天线31耦合,并进行整流稳压,实现无源供电,所述电源电路16通过所述公共电极线12为所述薄膜晶体管中的所述源电极23提供电源电压,所述参比电极10通过所述通道选择电路17为该行像素单元提供选通电压,此时选通信号通过所述待测溶液加载在所述薄膜晶体管上,所述读取电路15能够读出此时的传感信号。所述通道选择电路17、所述读取电路15和所述电源电路16可以由所述射频识别结构32进行控制。同时,由于用于导通每一行像素单元的所述待测溶液是由所述隔离墙13进行相互隔离,因此可以控制其他非工作行的像素单元为关闭状态。仅包括单个所述薄膜晶体管的所述像素单元的结构有利于多传感多位点检测和多模态集成。所述移动终端30可以是但不限于手机。Figure 3 is a schematic structural diagram of a thin film transistor type biochemical sensing microarray chip combined with RFID in a specific embodiment of the present invention. The thin film transistor type biochemical sensing microarray chip provided in this specific embodiment can be combined with an RFID system. As shown in FIG. 3 , after the thin film transistor type biochemical sensing microarray chip is combined with the radio frequency identification structure 32 , all the pixel units 19 in each row of the thin film transistor type biochemical sensing microarray chip are The sensitive electrode 28 is electrically connected to one of the reference electrodes 10 through contact with the solution to be measured located in the isolation area 131 . When the thin film transistor biochemical sensing microarray chip works in conjunction with the radio frequency identification structure 32, the mobile terminal 30 is coupled with the antenna 31 in the radio frequency identification structure 32, and performs rectification and voltage stabilization to achieve passive power supply. The power circuit 16 provides a power supply voltage to the source electrode 23 in the thin film transistor through the common electrode line 12, and the reference electrode 10 provides a gate voltage for the row of pixel units through the channel selection circuit 17, At this time, the strobe signal is loaded on the thin film transistor through the solution to be measured, and the reading circuit 15 can read the sensing signal at this time. The channel selection circuit 17 , the reading circuit 15 and the power supply circuit 16 can be controlled by the radio frequency identification structure 32 . At the same time, since the solution to be tested for turning on the pixel units in each row is isolated from each other by the isolation wall 13, the pixel units in other non-working rows can be controlled to be in a closed state. The structure of the pixel unit including only a single thin film transistor is beneficial to multi-sensing multi-site detection and multi-modal integration. The mobile terminal 30 may be but is not limited to a mobile phone.

本具体实施方式提供的面向生化传感的微阵列芯片,通过采用具有低带隙态密度的所述半导体层,可以降低所述薄膜晶体管型传感微阵列芯片的工作电压;另外采用了仅具有单个薄膜晶体管结构的像素单元,将开关功能和传感功能集成于同一个薄膜晶体管,减少了漏电途径和像素内串扰,从而达到低电压、低功耗传感芯片制造的目的。The microarray chip for biochemical sensing provided in this embodiment can reduce the operating voltage of the thin film transistor type sensing microarray chip by using the semiconductor layer with low bandgap state density; in addition, the microarray chip with only a low bandgap state density is used. The pixel unit with a single thin film transistor structure integrates the switching function and the sensing function in the same thin film transistor, reducing the leakage path and intra-pixel crosstalk, thereby achieving the purpose of manufacturing low-voltage and low-power sensing chips.

不仅如此,本具体实施方式还提供了一种薄膜晶体管型生化传感微阵列芯片的制备方法。附图4是本发明具体实施方式中薄膜晶体管型生化传感微阵列芯片的制备方法流程图,本具体实施方式制备的薄膜晶体管型生化传感微阵列芯片的结构可以参见图1-图3。如图1-图4所示,所述薄膜晶体管型生化传感微阵列芯片的制备方法,包括如下步骤:Not only that, this specific embodiment also provides a method for preparing a thin film transistor type biochemical sensing microarray chip. Figure 4 is a flow chart of a method for preparing a thin film transistor biochemical sensing microarray chip in a specific embodiment of the present invention. The structure of the thin film transistor type biochemical sensing microarray chip prepared in this specific embodiment can be seen in Figures 1-3. As shown in Figures 1 to 4, the preparation method of the thin film transistor type biochemical sensing microarray chip includes the following steps:

步骤S41,提供衬底20;Step S41, provide substrate 20;

步骤S42,形成像素阵列、多条行选信号线14、多条列读取信号线11和多条公共电极线12于所述衬底20的顶面上,所述像素阵列包括多个参比电极10、以及呈列阵列排布的多个像素单元19,所述像素单元19包括薄膜晶体管和位于所述薄膜晶体管上方的敏感电极28,所述薄膜晶体管包括底栅电极21、覆盖所述底栅电极21的底栅绝缘层22、位于所述底栅绝缘层22表面的源电极23和漏电极24、覆盖所述源电极23和所述漏电极24的半导体层25、覆盖所述半导体层25的封装层26,所述底栅电极21电连接所述敏感电极28,所述敏感电极28表面具有修饰层29,多个所述参比电极10与多行所述像素单元19一一对应,多条所述行选信号线14分别与多个所述参比电极10电连接,每列所述像素单元19中的所述漏电极24均连接同一条所述列读取信号线11,每条所述公共电极线12连接每列所述像素单元19中所有的所述源电极23;Step S42: Form a pixel array, a plurality of row selection signal lines 14, a plurality of column read signal lines 11 and a plurality of common electrode lines 12 on the top surface of the substrate 20. The pixel array includes a plurality of reference electrode 10, and a plurality of pixel units 19 arranged in an array. The pixel unit 19 includes a thin film transistor and a sensitive electrode 28 located above the thin film transistor. The thin film transistor includes a bottom gate electrode 21, covering the bottom gate electrode 21. The bottom gate insulating layer 22 of the gate electrode 21, the source electrode 23 and the drain electrode 24 located on the surface of the bottom gate insulating layer 22, the semiconductor layer 25 covering the source electrode 23 and the drain electrode 24, and the semiconductor layer 25 covering the source electrode 23 and the drain electrode 24. 25 of the encapsulation layer 26, the bottom gate electrode 21 is electrically connected to the sensitive electrode 28, the surface of the sensitive electrode 28 has a modification layer 29, a plurality of the reference electrodes 10 and a plurality of rows of the pixel units 19 correspond one to one , a plurality of row selection signal lines 14 are electrically connected to a plurality of reference electrodes 10 respectively, and the drain electrodes 24 in each column of the pixel units 19 are connected to the same column read signal line 11, Each common electrode line 12 connects all the source electrodes 23 in the pixel units 19 in each column;

步骤S43,形成多个隔离墙13于所述像素阵列上方,每个所述隔离墙13连续分布于一行所述像素单元19的所有所述封装层26上方,每个所述隔离墙13中包围一隔离区域131,所述隔离区域131连续暴露一行所述像素单元19中所有的所述敏感电极28、以及与一行所述像素单元19对应的一个所述参比电极10。Step S43: Form a plurality of isolation walls 13 above the pixel array. Each isolation wall 13 is continuously distributed over all the encapsulation layers 26 of the pixel units 19 in a row. Each isolation wall 13 is surrounded by An isolation area 131 continuously exposes all the sensitive electrodes 28 in a row of the pixel units 19 and one of the reference electrodes 10 corresponding to a row of the pixel units 19 .

本具体实施方式提供的薄膜晶体管型生化传感微阵列芯片及其制备方法,在像素阵列的每个像素单元中仅设置一个薄膜晶体管,将像素单元的开关功能和传感功能集成在同一个薄膜晶体管中,从而可以通过减小每个像素单元的尺寸来降低整个薄膜晶体管型生化传感微阵列芯片的尺寸。而且,由于仅设置一个薄膜晶体管,因而能够减少薄膜晶体管型生化传感微阵列芯片的漏电、串扰等问题,并有助于降低薄膜晶体管型生化传感微阵列芯片的功耗,从而改善传感芯片的性能,扩展传感芯片的应用领域。The thin film transistor type biochemical sensing microarray chip and its preparation method provided by this specific embodiment only provide one thin film transistor in each pixel unit of the pixel array, and the switching function and sensing function of the pixel unit are integrated in the same thin film. In transistors, the size of the entire thin film transistor-type biochemical sensing microarray chip can be reduced by reducing the size of each pixel unit. Moreover, since only one thin film transistor is provided, it can reduce leakage, crosstalk and other problems of the thin film transistor type biochemical sensing microarray chip, and help reduce the power consumption of the thin film transistor type biochemical sensing microarray chip, thereby improving sensing. The performance of the chip expands the application fields of sensing chips.

以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above are only preferred embodiments of the present invention. It should be noted that those of ordinary skill in the art can also make several improvements and modifications without departing from the principles of the present invention. These improvements and modifications should also be regarded as It is the protection scope of the present invention.

Claims (9)

1. A thin film transistor-type biochemical sensing microarray chip, comprising:
a substrate;
the pixel array is positioned on the substrate and comprises a plurality of reference electrodes and a plurality of pixel units which are arranged in an array, wherein each pixel unit comprises a thin film transistor and a plurality of sensitive electrodes which are positioned above the thin film transistor, each thin film transistor comprises a bottom gate electrode, a bottom gate insulating layer which covers the bottom gate electrode, a source electrode and a drain electrode which are positioned on the surface of the bottom gate insulating layer, a semiconductor layer which covers the source electrode and the drain electrode, and a packaging layer which covers the semiconductor layer, the bottom gate electrode is electrically connected with the sensitive electrodes, the surface of each sensitive electrode is provided with a modification layer, the reference electrodes are in one-to-one correspondence with a plurality of rows of pixel units, and each pixel unit only comprises one thin film transistor;
a plurality of row selection signal lines positioned on the substrate, wherein the row selection signal lines are respectively and electrically connected with the reference electrodes;
a plurality of column read signal lines on the substrate, wherein the drain electrode in each column of the pixel units is connected with the same column read signal line;
a plurality of common electrode lines on the substrate, each common electrode line connecting all the source electrodes in each column of the pixel units;
the isolation walls are in a surrounding frame shape, each isolation wall is continuously distributed above all packaging layers of one row of pixel units, each isolation wall surrounds an isolation area, each isolation area is continuously exposed to all sensitive electrodes in one row of pixel units and one reference electrode corresponding to one row of pixel units, two adjacent rows of pixel units are mutually isolated through the isolation walls, the isolation areas in the isolation walls are used for containing a solution to be detected, and the reference electrode exposed through the isolation areas and the sensitive electrode form a conductive path through the solution to be detected so as to realize detection of the solution to be detected;
the pixel units are arranged in an array along a first direction and a second direction, the pixel units are arranged at intervals along the first direction and serve as one row of pixel units, the first direction and the second direction are all directions parallel to the top surface of the substrate, and the first direction and the second direction are intersected;
each reference electrode is located outside one row of the pixel units along the first direction, and a plurality of reference electrodes are arranged at intervals along the second direction.
2. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the reference electrode comprises an Ag/AgCl electrode and a porous polymer film containing saturated chloride salt.
3. The thin film transistor type biochemical sensing microarray chip according to claim 2, wherein the chloride salt is sodium chloride or potassium chloride, and the porous polymer film is polyvinyl chloride or polyvinyl butyral or a blend material of polyvinyl butyral and polyoxyethylene-polyoxypropylene-polyoxyethylene triblock copolymer.
4. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the materials of the bottom gate electrode, the source electrode, the drain electrode, the row selection signal line, the column reading signal line, and the common electrode line are conductive polymers, carbon-based conductors, metal oxides, metal nanowires, metals, or metal oxide nanoparticles.
5. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the material of the semiconductor layer is an inorganic material, an organic small molecule semiconductor material, a polymer semiconductor material, or a small molecule semiconductor material-polymer insulation material mixed system.
6. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the semiconductor layer covers a part of the source electrode, a part of the drain electrode, and the bottom gate insulating layer between the source electrode and the drain electrode, and the encapsulation layer covers the semiconductor layer, a part of the source electrode, a part of the drain electrode, and the bottom gate insulating layer; the thin film transistor further includes:
and the conductive interconnection layer penetrates through the packaging layer and part of the bottom gate insulating layer, one end of the conductive interconnection layer is electrically connected with the bottom gate electrode, and the other end of the conductive interconnection layer is electrically connected with the sensitive electrode.
7. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the material of the modification layer is cyclohexanone, polyvinylchloride, potassium tetrakis (3, 5-bis (trifluoromethyl) phenyl) borate, sodium tetrakis [3, 5-bis (trifluoromethyl) phenyl ] borate, bis (2-ethylhexyl) sebacate, ionophore, biochemical sensitive material, or biosensing material.
8. The thin film transistor type biochemical sensing microarray chip according to claim 1, wherein the material of the partition wall is a hydrophobic material.
9. The method for manufacturing a thin film transistor type biochemical sensing microarray chip according to claim 1, comprising the steps of:
providing a substrate;
forming a pixel array, a plurality of row selection signal lines, a plurality of column reading signal lines and a plurality of common electrode lines on the top surface of the substrate, wherein the pixel array comprises a plurality of reference electrodes and a plurality of pixel units distributed in a column array, each pixel unit comprises a thin film transistor and a sensitive electrode positioned above the thin film transistor, the thin film transistor comprises a bottom gate electrode, a bottom gate insulating layer covering the bottom gate electrode, a source electrode and a drain electrode positioned on the surface of the bottom gate insulating layer, a semiconductor layer covering the source electrode and the drain electrode, a packaging layer covering the semiconductor layer, the bottom gate electrode is electrically connected with the sensitive electrode, the surface of the sensitive electrode is provided with a modification layer, the reference electrodes are in one-to-one correspondence with a plurality of rows of pixel units, each pixel unit only comprises one thin film transistor, the row selection signal lines are respectively and electrically connected with the reference electrodes, the drain electrode in each column of pixel unit is connected with the same row reading signal line, and the common electrode in each column of pixel unit is connected with all the pixel units;
forming a plurality of isolation walls above the pixel array, wherein the isolation walls are in a surrounding frame shape, each isolation wall is continuously distributed above all packaging layers of one row of pixel units, each isolation wall surrounds an isolation area, each isolation area continuously exposes all sensitive electrodes in one row of pixel units and one reference electrode corresponding to one row of pixel units, two adjacent rows of pixel units are mutually isolated through the isolation walls, the isolation areas in the isolation walls are used for containing a solution to be detected, and the reference electrodes exposed through the isolation areas and the sensitive electrodes form a conductive path through the solution to be detected so as to realize detection of the solution to be detected.
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