CN115223911A - Chip transfer substrate, transfer device and chip transfer method - Google Patents
Chip transfer substrate, transfer device and chip transfer method Download PDFInfo
- Publication number
- CN115223911A CN115223911A CN202110426192.2A CN202110426192A CN115223911A CN 115223911 A CN115223911 A CN 115223911A CN 202110426192 A CN202110426192 A CN 202110426192A CN 115223911 A CN115223911 A CN 115223911A
- Authority
- CN
- China
- Prior art keywords
- chip
- transferred
- photosensitive adhesive
- transfer substrate
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67736—Loading to or unloading from a conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
Description
技术领域technical field
本发明实施例涉及显示技术领域,尤其涉及一种芯片转移基板、转移装置和芯片转移方法。Embodiments of the present invention relate to the field of display technology, and in particular, to a chip transfer substrate, a transfer device and a chip transfer method.
背景技术Background technique
微发光二极管(Micro Light Emitting Diode,Micro LED)具有高亮度、寿命长、响应速度快、高对比度等优点,采用Micro LED的显示装置已经成为新一代的显示技术。Micro Light Emitting Diode (Micro LED) has the advantages of high brightness, long life, fast response, and high contrast. Display devices using Micro LED have become a new generation of display technology.
目前,批量转移技术是制备Micro LED显示装置的关键技术,现有技术中通常采用胶体来实现对Micro LED的转移,但是在转移过程中,胶体容易被碳化,且在Micro LED周围容易出现残胶的现象,严重影响Micro LED转移的良率。At present, batch transfer technology is the key technology for the preparation of Micro LED display devices. In the prior art, colloids are usually used to transfer Micro LEDs. However, during the transfer process, the colloids are easily carbonized, and glue residues are prone to appear around the Micro LEDs. phenomenon, which seriously affects the yield of Micro LED transfer.
发明内容SUMMARY OF THE INVENTION
本发明实施例提供一种芯片转移基板、转移装置和芯片转移方法,以提高芯片在转移过程中的良率。Embodiments of the present invention provide a chip transfer substrate, a transfer device and a chip transfer method, so as to improve the yield of chips during the transfer process.
第一方面,本发明实施例提供了一种芯片转移基板,包括:In a first aspect, an embodiment of the present invention provides a chip transfer substrate, including:
转移基底;transfer substrate;
胶层,位于所述转移基底上,所述胶层包括阵列排布的多个光敏胶单元,相邻所述光敏胶单元之间存在间距;所述光敏胶单元用于在受到光源照射时,粘附待转移芯片阵列中对应的待转移芯片至目标基板;an adhesive layer, located on the transfer substrate, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, and there is a distance between the adjacent photosensitive adhesive units; the photosensitive adhesive units are used for Adhering the corresponding chips to be transferred in the array of chips to be transferred to the target substrate;
其中每个所述光敏胶单元对应至少一个待转移芯片。Each of the photosensitive adhesive units corresponds to at least one chip to be transferred.
可选地,每个所述光敏胶单元对应一个所述待转移芯片。Optionally, each of the photosensitive adhesive units corresponds to one of the chips to be transferred.
可选地,所述光敏胶单元的形状与所述待转移芯片的形状相同,尺寸相等。Optionally, the photosensitive adhesive unit has the same shape and size as the chip to be transferred.
可选地,每个所述光敏胶单元对应多个所述待转移芯片;Optionally, each of the photosensitive adhesive units corresponds to a plurality of the chips to be transferred;
优选地,所述光敏胶单元的形状与对应的多个所述待转移芯片所在区域的形状相同,尺寸相等;其中,多个所述待转移芯片所在区域包括多个待转移芯片所在位置以及多个所述待转移芯片中相邻所述待转移芯片的间距位置。Preferably, the photosensitive adhesive unit has the same shape and size as the corresponding regions where the plurality of chips to be transferred are located; wherein, the regions where the plurality of chips to be transferred are located include the positions of the plurality of chips to be transferred and a plurality of A spacing position between adjacent chips to be transferred among the chips to be transferred.
可选地,所述待转移芯片的尺寸小于或等于100微米。Optionally, the size of the chip to be transferred is less than or equal to 100 microns.
可选地,还包括非光敏胶,所述非光敏胶至少设置于部分相邻所述光敏胶单元之间。Optionally, a non-photosensitive adhesive is also included, and the non-photosensitive adhesive is disposed at least between some adjacent photosensitive adhesive units.
可选地,所述非光敏胶围绕所述光敏胶单元设置,所述光敏胶单元与所述非光敏胶为一体结构。Optionally, the non-photosensitive adhesive is disposed around the photosensitive adhesive unit, and the photosensitive adhesive unit and the non-photosensitive adhesive are integrally formed.
第二方面,本发明实施例还提供了一种芯片转移装置,该芯片转移装置包括:In a second aspect, an embodiment of the present invention further provides a chip transfer device, the chip transfer device comprising:
光源,所述光源用于提供预设波长的光线;a light source, the light source is used to provide light with a preset wavelength;
芯片转移基板,所述芯片转移基板包括转移基底和位于所述转移基底上的胶层,所述胶层包括阵列排布的多个光敏胶单元,相邻所述光敏胶单元之间存在间距;所述光敏胶单元用于在受到所述光源照射时,粘附待转移芯片阵列中对应的待转移芯片至目标基板。a chip transfer substrate, the chip transfer substrate includes a transfer substrate and an adhesive layer on the transfer substrate, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, and there is a gap between adjacent photosensitive adhesive units; The photosensitive adhesive unit is used for adhering the corresponding chips to be transferred in the array of chips to be transferred to the target substrate when irradiated by the light source.
第三方面,本发明实施例还提供了一种芯片转移方法,包括:In a third aspect, an embodiment of the present invention also provides a chip transfer method, including:
提供芯片转移基板,所述芯片转移基板包括转移基底和位于所述转移基底上的胶层,所述胶层包括阵列排布的多个光敏胶单元,相邻所述光敏胶单元之间存在间距;A chip transfer substrate is provided, the chip transfer substrate includes a transfer substrate and an adhesive layer on the transfer substrate, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, and there is a spacing between adjacent photosensitive adhesive units ;
提供承载基板,所述承载基板上设置有待转移芯片阵列,并将所述光敏胶单元与所述待转移芯片阵列进行对位;providing a carrier substrate on which a chip array to be transferred is arranged, and the photosensitive adhesive unit and the chip array to be transferred are aligned;
提供光源,所述光源用于提供预设波长的光线;providing a light source for providing light with a preset wavelength;
提供目标基板,通过所述光源照射所述光敏胶单元,以粘附所述待转移芯片阵列中对应的待转移芯片至所述目标基板。A target substrate is provided, and the photosensitive adhesive unit is irradiated by the light source to adhere the corresponding chips to be transferred in the array of chips to be transferred to the target substrate.
可选地,所述提供转移基板,包括:Optionally, the providing a transfer substrate includes:
提供转移基底,并在所述转移基底上形成整层连续的胶层;providing a transfer substrate, and forming an entire continuous adhesive layer on the transfer substrate;
对所述胶层进行图形化,以使所述胶层在用于形成光敏胶单元的位置形成设定图案,向所述设定图案中填充光敏材料,形成所述光敏胶单元。The adhesive layer is patterned so that the adhesive layer forms a set pattern at a position for forming a photosensitive adhesive unit, and a photosensitive material is filled into the set pattern to form the photosensitive adhesive unit.
本发明实施例提供了一种芯片转移基板、转移装置和芯片转移方法,其中芯片转移基板包括转移基底和位于转移基底上的胶层。其中,胶层包括阵列排布的多个光敏胶单元,每个光敏胶单元至少对应一个待转移芯片,且相邻的光敏胶单元之间存在间距。由于相邻的光敏胶单元之间存在间距,使得间距位置不存在光敏胶,待转移芯片与光敏胶单元对应设置,因此在转移芯片的过程中,相邻的光敏胶单元之间的间距位置不会产生胶材气化或碳化的现象,从而有利于提高待转移芯片的转移良率。此外,因相邻光敏胶单元之间的间距位置不存在光敏胶,在对待转移芯片进行单点修复过程中,在采用激光照射芯片转移基板时,不会在待转移芯片的周围形成残胶,有利于提高单点修复的良率。Embodiments of the present invention provide a chip transfer substrate, a transfer device and a chip transfer method, wherein the chip transfer substrate includes a transfer base and an adhesive layer on the transfer base. Wherein, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, each photosensitive adhesive unit corresponds to at least one chip to be transferred, and there is a gap between adjacent photosensitive adhesive units. Since there is a distance between adjacent photosensitive adhesive units, there is no photosensitive adhesive at the spacing position, and the chip to be transferred is set corresponding to the photosensitive adhesive unit. Therefore, in the process of transferring the chip, the spacing between adjacent photosensitive adhesive units is The phenomenon of vaporization or carbonization of the glue material will occur, which is beneficial to improve the transfer yield of the chip to be transferred. In addition, because there is no photosensitive adhesive in the spacing between adjacent photosensitive adhesive units, during the single-point repair process of the chip to be transferred, when the substrate is transferred by laser irradiation of the chip, residual glue will not be formed around the chip to be transferred. It is beneficial to improve the yield of single point repair.
附图说明Description of drawings
图1为本发明实施例提供的一种芯片转移基板的俯视结构图;FIG. 1 is a top-view structural view of a chip transfer substrate according to an embodiment of the present invention;
图2是本发明实施例提供的一种芯片转移基板的剖视图;2 is a cross-sectional view of a chip transfer substrate provided by an embodiment of the present invention;
图3为本发明实施例提供的一种芯片转移过程的示意图;3 is a schematic diagram of a chip transfer process according to an embodiment of the present invention;
图4为本发明实施例提供的另一种芯片转移基板的俯视结构图;4 is a top-view structural view of another chip transfer substrate provided by an embodiment of the present invention;
图5为本发明实施例提供的另一种芯片转移过程对应的芯片转移基板的剖面结构示意图;5 is a schematic cross-sectional structural diagram of a chip transfer substrate corresponding to another chip transfer process provided by an embodiment of the present invention;
图6为本发明实施例提供的另一种芯片转移基板的俯视结构示意图;6 is a schematic top-view structural diagram of another chip transfer substrate provided by an embodiment of the present invention;
图7为本发明实施例提供的一种芯片转移装置的结构示意图;7 is a schematic structural diagram of a chip transfer device according to an embodiment of the present invention;
图8为本发明实施例提供的一种芯片转移方法的流程图;8 is a flowchart of a chip transfer method provided by an embodiment of the present invention;
图9为本发明实施例提供的另一种芯片转移基板的结构示意图;FIG. 9 is a schematic structural diagram of another chip transfer substrate according to an embodiment of the present invention;
图10为本发明实施例提供的一种光敏胶单元与待转移芯片对位的过程示意图;10 is a schematic diagram of a process of aligning a photosensitive adhesive unit and a chip to be transferred according to an embodiment of the present invention;
图11为本发明实施例提供的一种光敏胶单元粘附对应的待转移芯片的过程示意图;11 is a schematic diagram of a process of adhering a photosensitive adhesive unit to a corresponding chip to be transferred according to an embodiment of the present invention;
图12为本发明实施例提供的一种待转移芯片转移至目标基板上的过程示意图。FIG. 12 is a schematic diagram of a process of transferring a to-be-transferred chip to a target substrate according to an embodiment of the present invention.
具体实施方式Detailed ways
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅仅用于解释本发明,而非对本发明的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本发明相关的部分而非全部结构。The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, the drawings only show some but not all structures related to the present invention.
正如背景技术所述,现有技术在对LED芯片进行批量转移的过程中,通常采用激光照射光敏胶来实现粘附或释放LED芯片。在转移过程中,由于有LED芯片和没有LED芯片位置处光敏胶吸收的能量不同,当激光的功率过大时,没有LED芯片遮挡的位置,光敏胶吸收的能量过大,光敏胶被大面积气化,或者相邻LED芯片之间的光敏胶被碳化,严重影响LED芯片的转移良率。当进行单点修复时,由于有LED芯片和没有LED芯片位置处光敏胶吸收的能量不同,也容易造成LED芯片周围出现残胶的现象,影响修复的良率。As described in the background art, in the process of batch transferring LED chips in the prior art, laser light is usually used to irradiate photosensitive adhesive to realize adhesion or release of LED chips. During the transfer process, due to the difference in the energy absorbed by the photosensitive adhesive at the positions with and without LED chips, when the power of the laser is too large, there is no position blocked by the LED chip, the energy absorbed by the photosensitive adhesive is too large, and the photosensitive adhesive is covered by a large area. Vaporization, or carbonization of the photosensitive adhesive between adjacent LED chips, seriously affects the transfer yield of LED chips. When single-point repair is performed, due to the difference in energy absorbed by the photosensitive adhesive at the positions with and without the LED chip, it is easy to cause glue residue around the LED chip, which affects the repair yield.
针对上述问题,本发明实施例提供一种芯片转移基板,能够提高LED芯片在转移过程中的良率。图1为本发明实施例提供的一种芯片转移基板的俯视结构图,图2是本发明实施例提供的一种芯片转移基板的剖视图,其中,图2可以是图1沿剖面线AA’剖切得到的剖视图;图3为本发明实施例提供的一种芯片转移过程的示意图。参考图1-图3,本发明实施例提供的芯片转移基板包括:转移基底10;胶层20,位于转移基底10上,胶层20包括阵列排布的多个光敏胶单元210,相邻光敏胶单元210之间存在间距;光敏胶单元210用于在受到光源照射时,粘附待转移芯片阵列中对应的待转移芯片40至目标基板50;其中每个光敏胶单元210对应至少一个待转移芯片40。In view of the above problems, embodiments of the present invention provide a chip transfer substrate, which can improve the yield of LED chips during the transfer process. 1 is a top plan view of a chip transfer substrate provided by an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a chip transfer substrate provided by an embodiment of the present invention, wherein FIG. 2 may be a section taken along section line AA' in FIG. 1 Figure 3 is a schematic diagram of a chip transfer process provided by an embodiment of the present invention. Referring to FIGS. 1 to 3 , a chip transfer substrate provided by an embodiment of the present invention includes: a
具体地,转移基底10可以为玻璃基板,用于对设置于其上的胶层20起到支撑作用。胶层20包括多个光敏胶单元210,光敏胶单元210在转移基底10上以阵列形式排布。待转移芯片阵列设置在承载基板30上,待转移芯片阵列中包括待转移芯片40,其中,承载基板30可以为蓝宝石基板或砷化镓基板,待转移芯片40可以为Micro LED。设置于转移基底10上的每个光敏胶单元210均至少对应一个待转移芯片40,也就是说,每个光敏胶单元210在转移基底10上的垂直投影至少覆盖一个待转移芯片40。光敏胶单元210可以由聚酰亚胺等光敏聚合物材料制成,当光敏胶单元210受到光源发出的第一波长的光线照射时可迅速固化产生一定的粘性,从而能够粘附对应的需要转移的待转移芯片40;其中第一波长的光线可以为紫外线。Specifically, the
在本实施例中,相邻的光敏胶单元210之间存在间距,该间距可以根据产品的实际需求进行设置。为了确保待转移芯片40的转移可靠性,需要将待转移芯片40与光敏胶单元210进行精准对位,以使得待转移芯片40与光敏胶单元210贴合。当光敏胶单元210受到紫外光源照射时,光敏胶单元210迅速固化,并粘附对应的待转移芯片40,采用光源发出的第二波长的光线照射粘附有待转移芯片40的芯片转移基板,使得光敏胶单元210失去粘性,以将待转移芯片40转移至目标基板50上,从而实现LED芯片的批量转移,其中,第二波长的光线可以为红外线。待转移芯片40以阵列形式排布在待转移芯片阵列中,当待转移芯片40与转移基板对位时,光敏胶单元210只存在于有待转移芯片40的位置,没有待转移芯片40的位置不存在光敏胶单元210,因此在转移基板接受光源照射时,被待转移芯片40遮挡的光敏胶单元40固化产生粘性,而在相邻光敏胶单元210的间距处,由于不设置光敏胶,因此间距位置不会因吸收光源的能量而出现气化或碳化的现象。In this embodiment, there is a distance between adjacent photosensitive
此外,当芯片转移基板粘附的待转移芯片40出现损坏而进行激光单点修复时,通过光源发出的第二波长的光线照射对应的光敏胶单元210,使得光敏胶单元210失去粘性,芯片转移基板上对应位置的待转移芯片40脱落,以便能够重新粘附新的待转移芯片40。在对需要修复的待转移芯片40进行激光照射时,由于未被待转移芯片40遮挡的位置(即相邻光敏胶单元40之间的间距位置)不存在光敏胶,因此在采用激光照射芯片转移基板时,待转移芯片40的周围也不会存在残胶,不会影响激光单点修复的良率。In addition, when the chip to be transferred 40 adhered to the chip transfer substrate is damaged and the laser single-point repair is performed, the corresponding photosensitive
在其他实施例中,也可以包括两种光源,一种光源用于发出第一波长的光线,以固化光敏胶单元210;另一种光源用于发出第二波长的光线,以使得光敏胶单元210失去粘性。In other embodiments, two light sources may also be included, one light source is used for emitting light with a first wavelength to cure the photosensitive
本发明实施例提供了一种芯片转移基板,包括转移基底和位于转移基底上的胶层。其中,胶层包括阵列排布的多个光敏胶单元,每个光敏胶单元至少对应一个待转移芯片,且相邻的光敏胶单元之间存在间距。由于相邻的光敏胶单元之间存在间距,使得间距位置不存在光敏胶,待转移芯片与光敏胶单元对应设置,因此在转移芯片的过程中,相邻的光敏胶单元之间的间距位置不会产生胶材气化或碳化的现象,从而有利于提高待转移芯片的转移良率。此外,在对待转移芯片进行单点修复时,相邻光敏胶单元之间的间距位置因不存在光敏胶,不会在待转移芯片的周围形成残胶,有利于提高单点修复的良率。An embodiment of the present invention provides a chip transfer substrate, which includes a transfer substrate and an adhesive layer on the transfer substrate. Wherein, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, each photosensitive adhesive unit corresponds to at least one chip to be transferred, and there is a gap between adjacent photosensitive adhesive units. Since there is a distance between adjacent photosensitive adhesive units, there is no photosensitive adhesive at the spacing position, and the chip to be transferred is set corresponding to the photosensitive adhesive unit. Therefore, in the process of transferring the chip, the spacing between adjacent photosensitive adhesive units is The phenomenon of vaporization or carbonization of the glue material will occur, which is beneficial to improve the transfer yield of the chip to be transferred. In addition, when the chip to be transferred is single-point repaired, since there is no photosensitive adhesive in the spacing between adjacent photosensitive adhesive units, no adhesive residue will be formed around the to-be-transferred chip, which is beneficial to improve the yield of single-point repair.
需要说明的是,本发明实施例提到的单点修复还可以是对转移到目标基板50上的芯片进行修复,在目标基板50同样设置有本发明实施例提供的胶层。It should be noted that the single-point repair mentioned in the embodiment of the present invention may also be repairing the chip transferred to the
继续参考图3,图3所示的芯片转移基板的结构为每个光敏胶单元210对应一个待转移芯片40的情况。在本实施例中,光敏胶单元210的形状与待转移芯片40的形状形同,尺寸相同。在实现光敏胶单元210与待转移芯片40的精准对位后,光敏胶单元210能够刚好贴合待转移芯片40,待转移芯片40的周围和相邻待转移芯片40之间均没有光敏胶,因此在保证粘附牢固的情况下,能够改善相邻待转移芯片40之间出现胶材气化或碳化的现象。优选地,相邻光敏胶单元210之间的间距与对应的相邻待转移芯片40之间的间距相等,间距尺寸均为d,便于实现光敏胶单元210与待转移芯片40进行精准对位,能够降低光敏胶单元210图形化的工艺难度。同时,任意相邻光敏胶单元210之间的间距也可以相等,能够提高光敏胶单元210与对应的待转移芯片40对位的精度。Continuing to refer to FIG. 3 , the structure of the chip transfer substrate shown in FIG. 3 is that each photosensitive
作为本发明实施例提供的另一种可选实施方式,每个光敏胶单元210还可以与多个待转移芯片40对应。图4为本发明实施例提供的另一种芯片转移基板的俯视结构图,图5为本发明实施例提供的另一种芯片转移过程对应的芯片转移基板的剖面结构示意图,参考图4和图5,每个光敏胶单元210对应多个待转移芯片40;优选地,光敏胶单元210的形状与对应的多个待转移芯片40所在区域的形状相同,尺寸相等;其中,多个待转移芯片40所在区域包括多个待转移芯片40所在位置以及多个待转移芯片40中相邻待转移芯片40的间距位置。As another optional implementation manner provided by the embodiment of the present invention, each photosensitive
具体地,在本实施例中,待转移芯片40为micro LED芯片,其尺寸小于或等于100微米,为了简化工艺难度,可以将光敏胶单元210的尺寸做的大一些,使得每个光敏胶单元210可以粘附多个待转移芯片40,也即每个光敏胶单元210在转移基底10上的垂直投影覆盖多个待转移芯片40。示例性地,待转移芯片40以阵列排布的形式设置于承载基板30上,一个光敏胶单元210的尺寸与9个待转移芯片90所在区域的形状、尺寸均相同,也就说,一个光敏胶单元210的尺寸、形状和9个待转移芯片40所形成区域的尺寸、形状相同,其中,9个待转移芯片40所形成区域的尺寸包括9个待转移芯片40的尺寸和相邻待转移芯片40之间的间距尺寸。相邻光敏胶单元210之间的间距位置同样没有光敏胶,因此,在光源照射转移基板时,仅在存在光敏胶单元210的位置粘附对应的待转移芯片40,而在相邻光敏胶单元210之间的间距位置,不会出现产生光敏胶气化或碳化的现象。Specifically, in this embodiment, the
在本实施例中,通过将每个光敏胶单元210对应多个待转移芯片40,能够相应的增大光敏胶单元210的尺寸,在制作转移基板时,能够降低形成光敏胶单元210的工艺难度,有利于提高光敏胶单元210与待转移芯片40之间的对位精度。In this embodiment, by assigning each photosensitive
图6为本发明实施例提供的另一种芯片转移基板的俯视结构示意图,参考图6,在上述各技术方案的基础上,本发明实施例提供的芯片转移基板还包括非光敏胶220,非光敏胶220至少设置于部分相邻光敏胶单元210之间。FIG. 6 is a schematic top-view structure diagram of another chip transfer substrate provided by an embodiment of the present invention. Referring to FIG. 6 , on the basis of the above technical solutions, the chip transfer substrate provided by an embodiment of the present invention further includes a
具体地,非光敏胶220可以围绕光敏胶单元210设置,且光敏胶单元210和非光敏胶220为一体结构,也即,相邻光敏胶单元210之间的间距位置设置有非光敏胶220。控制光敏胶单元210与待转移芯片40对位贴合,当光敏胶单元210受到光源发出的第一波长的光线照射时,被待转移芯片40遮挡的光敏胶单元210吸收的能量较小,而无待转移芯片40遮挡的非光敏胶220吸收的能量较大,但是由于非光敏胶220中不含有光敏材料,因此,非光敏胶220可以作为光敏胶单元210的缓冲结构,在光源发出的光线能量过高时,非光敏胶220吸收能量不会使得自身发生气化或碳化,同时非光敏胶220还能够吸收部分照射至光敏胶单元210中的能量,以减弱光源能量过高造成的光敏胶气化或碳化的现象。被照射后的光敏胶单元210迅速固化,并粘附对应的待转移芯片40。采用光源发出的第二波长的光线照射粘附有待转移芯片40的芯片转移基板,使得光敏胶单元210失去粘性,以将待转移芯片40转移至目标基板50上,从而实现LED芯片的批量转移。Specifically, the non-photosensitive adhesive 220 may be disposed around the photosensitive
本发明实施例还提供了一种芯片转移装置,图7为本发明实施例提供的一种芯片转移装置的结构示意图,参考图1、图2和图7,该芯片转移装置包括光源100,光源100用于提供预设波长的光线;转移基板,转移基板包括转移基底10和位于转移基底10上的胶层20,胶层20包括阵列排布的多个光敏胶单元210,相邻光敏胶单元210之间存在间距;光敏胶单元210用于在受到光源照射时,粘附待转移芯片阵列中对应的待转移芯片40至目标基板50。其中,光源100可以发出第一波长的光线和第二波长的光线,光敏胶单元210在受到第一波长的光线照射时,能够迅速固化产生粘性,以粘附对应的待转移芯片40。光敏胶单元210在受到第二波长的光线照射时,能够恢复至流体状态,失去粘性,从而使得粘附的待转移芯片40脱落。An embodiment of the present invention further provides a chip transfer device. FIG. 7 is a schematic structural diagram of a chip transfer device provided by an embodiment of the present invention. Referring to FIGS. 1 , 2 and 7 , the chip transfer device includes a
本发明实施例提供的芯片转移装置包括本发明任意实施例所提供的芯片转移基板,因此该芯片转移装置也具备本发明任意实施例所描述的有益效果,在此不再赘述。The chip transfer device provided by the embodiment of the present invention includes the chip transfer substrate provided by any embodiment of the present invention. Therefore, the chip transfer device also has the beneficial effects described in any embodiment of the present invention, which will not be repeated here.
本发明实施例还提供了一种芯片转移方法,该芯片转移方法可以应用于本发明上述任意实施例的芯片转移装置,图8为本发明实施例提供的一种芯片转移方法的流程图,图9-图12为图8中芯片转移方法步骤对应的过程示意图,参考图8-图12,本发明实施例提供的芯片转移方法包括:An embodiment of the present invention further provides a chip transfer method, and the chip transfer method can be applied to the chip transfer apparatus of any of the above-mentioned embodiments of the present invention. FIG. 8 is a flowchart of a chip transfer method provided by an embodiment of the present invention. FIG. 9-FIG. 12 are schematic process diagrams corresponding to the steps of the chip transfer method in FIG. 8. Referring to FIG. 8-FIG. 12, the chip transfer method provided by the embodiment of the present invention includes:
S110、提供芯片转移基板,芯片转移基板包括转移基底和位于转移基底上的胶层,胶层包括阵列排布的多个光敏胶单元,相邻光敏胶单元之间存在间距。S110, providing a chip transfer substrate, the chip transfer substrate includes a transfer substrate and an adhesive layer on the transfer substrate, the adhesive layer includes a plurality of photosensitive adhesive units arranged in an array, and there is a gap between adjacent photosensitive adhesive units.
具体地,图9为本发明实施例提供的另一种芯片转移基板的结构示意图,参考图9,芯片转移基板包括转移基底10和位于转移基底10上的胶层20。胶层20包括光敏胶单元210和围绕光敏胶单元210设置的非光敏胶220,其中,光敏胶单元210和非光敏胶220为一体结构,胶层20可以采用涂覆的方式形成在转移基底10上。例如,在转移基底10上涂覆一整层连续的胶层20,对胶层20进行图形化,以使胶层20在用于形成光敏胶单元210的位置形成设定图案,向设定图案中填充光敏材料,形成光敏胶单元210。其中设定图案可以根据待转移芯片40的形状进行设计,以实现光敏胶单元210与待转移芯片40之间的精准对位。可以采用纳米压印技术(包括热压印和极紫外压印)或光刻技术在胶层20上形成设定图案,向设定图案中填充光敏材料,形成光敏胶单元210,光敏材料可以为聚酰亚胺等光敏聚合物材料。转移基底10可以为玻璃基板,用于对设置于其上的胶层20起到支撑作用。Specifically, FIG. 9 is a schematic structural diagram of another chip transfer substrate provided by an embodiment of the present invention. Referring to FIG. 9 , the chip transfer substrate includes a
S120、提供承载基板,承载基板上设置有待转移芯片阵列,并将光敏胶单元与待转移芯片阵列进行对位。S120 , providing a carrier substrate on which a chip array to be transferred is disposed, and aligning the photosensitive adhesive unit with the chip array to be transferred.
具体地,图10为本发明实施例提供的一种光敏胶单元与待转移芯片对位的过程示意图,参考图10,在承载基板30上形成待转移芯片阵列,待转移芯片阵列中包括待转移芯片40,待转移芯片40可以为Micro LED。设置于转移基底10上的每个光敏胶单元210均至少对应一个待转移芯片40,将待转移芯片40与光敏胶单元210进行精准对位,以使得待转移芯片40与光敏胶单元210贴合。Specifically, FIG. 10 is a schematic diagram of a process of aligning a photosensitive adhesive unit and a chip to be transferred according to an embodiment of the present invention. Referring to FIG. 10 , an array of chips to be transferred is formed on the
S130、提供光源,光源用于提供预设波长的光线。S130 , providing a light source, where the light source is used to provide light with a preset wavelength.
具体地,图11为本发明实施例提供的一种光敏胶单元粘附对应的待转移芯片的过程示意图,参考图11,光源为能够提供预设波长光线的光源,预设波长光线可以为紫外线和红外线等,光源发出的能量小于10毫焦耳。当光敏胶单元210受到第一波长的光线(紫外线)照射时,光敏胶单元210迅速固化,并粘附对应的待转移芯片40。由于非光敏胶220围绕光敏胶单元210设置,也即,相邻光敏胶单元210之间的间距位置设置有非光敏胶220。光敏胶单元210的形状、尺寸均与待转移芯片40的形状、尺寸相同,控制光敏胶单元210与待转移芯片40对位贴合,当光敏胶单元210受到紫外光源照射时,被待转移芯片40遮挡的光敏胶单元210吸收的能量较小,而无待转移芯片40遮挡的非光敏胶220吸收的能量较大,但是由于非光敏胶220中不含有光敏材料,因此,非光敏胶220可以作为光敏胶单元210的缓冲结构,在光源发出的光线能量过高时,非光敏胶220吸收能量不会使得自身发生气化或碳化,同时非光敏胶220还能够吸收部分照射至光敏胶单元210中的能量,以减弱光源能量过高造成的光敏胶气化或碳化的现象。被照射后的光敏胶单元210迅速固化,并粘附对应的待转移芯片40。Specifically, FIG. 11 is a schematic diagram of a process of adhering a photosensitive adhesive unit to a corresponding chip to be transferred according to an embodiment of the present invention. Referring to FIG. 11 , the light source is a light source capable of providing light with a preset wavelength, and the preset wavelength light can be ultraviolet rays And infrared, etc., the energy emitted by the light source is less than 10 millijoules. When the photosensitive
S140、提供目标基板,通过光源照射光敏胶单元,以粘附待转移芯片阵列中对应的待转移芯片至目标基板。S140 , providing a target substrate, and irradiating the photosensitive adhesive unit with a light source to adhere the corresponding chips to be transferred in the array of chips to be transferred to the target substrate.
具体地,图12为本发明实施例提供的一种待转移芯片转移至目标基板上的过程示意图,参考图12,采用第二波长的光线(红外线)照射粘附有待转移芯片40的芯片转移基板,固化后的光敏胶单元210熔化而失去粘性,以将待转移芯片40转移至目标基板50上,从而实现待转移芯片40的批量转移。Specifically, FIG. 12 is a schematic diagram of a process of transferring a chip to be transferred to a target substrate according to an embodiment of the present invention. Referring to FIG. 12 , a second wavelength of light (infrared) is used to illuminate the chip transfer substrate to which the
当光敏胶单元210通过紫外线照射,粘附待转移芯片40后,若芯片转移基板粘附的待转移芯片40出现损坏,则可以通过激光单点修复的方式修复损坏的待转移芯片40。示例性地,可以通过光源发出的红外线照射对应的光敏胶单元210,使得光敏胶单元210失去粘性,芯片转移基板上对应位置的待转移芯片40脱落,以便能够重新粘附新的待转移芯片40。在对需要修复的待转移芯片40进行激光照射时,由于未被待转移芯片40遮挡的位置(即相邻光敏胶单元40之间的间距位置)存在非光敏胶,并不存在光敏胶,在进行激光照射时,非光敏胶不会出现碳化的现象,因此脱落下来的待转移芯片40的周围也不会存在残胶,不会影响激光单点修复的良率。When the photosensitive
本发明实施例提供了一种芯片转移方法,通过对胶层进行图案化,以形成多个阵列排布的光敏胶单元,每个光敏胶单元至少对应一个待转移芯片,且相邻的光敏胶单元之间存在间距。由于相邻的光敏胶单元之间存在间距,使得间距位置不存在光敏胶,因此在转移芯片的过程中,待转移芯片与光敏胶单元对应设置,相邻的光敏胶单元之间的间距位置不会因吸收光照能量而产生胶材气化或碳化的现象,从而有利于提高待转移芯片的转移良率。此外,因相邻光敏胶单元之间的间距位置不存在光敏胶,在对待转移芯片进行单点修复过程中,不会在待转移芯片的周围形成残胶,有利于提高单点修复的良率。The embodiment of the present invention provides a chip transfer method, by patterning the adhesive layer to form a plurality of photosensitive adhesive units arranged in an array, each photosensitive adhesive unit corresponds to at least one to-be-transferred chip, and adjacent photosensitive adhesive units There are gaps between cells. Since there is a gap between adjacent photosensitive adhesive units, there is no photosensitive adhesive at the spacing position. Therefore, during the process of transferring the chip, the chip to be transferred and the photosensitive adhesive unit are set correspondingly, and the spacing position between adjacent photosensitive adhesive units is different. The phenomenon that the glue material is vaporized or carbonized due to the absorption of light energy is beneficial to improve the transfer yield of the chip to be transferred. In addition, because there is no photosensitive adhesive in the spacing between adjacent photosensitive adhesive units, during the single-point repair process of the to-be-transferred chip, no adhesive residue will be formed around the to-be-transferred chip, which is beneficial to improve the yield of single-point repair. .
注意,上述仅为本发明的较佳实施例及所运用技术原理。本领域技术人员会理解,本发明不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此,虽然通过以上实施例对本发明进行了较为详细的说明,但是本发明不仅仅限于以上实施例,在不脱离本发明构思的情况下,还可以包括更多其他等效实施例,而本发明的范围由所附的权利要求范围决定。Note that the above are only preferred embodiments of the present invention and applied technical principles. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and can also include more other equivalent embodiments without departing from the concept of the present invention. The scope is determined by the scope of the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110426192.2A CN115223911A (en) | 2021-04-20 | 2021-04-20 | Chip transfer substrate, transfer device and chip transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110426192.2A CN115223911A (en) | 2021-04-20 | 2021-04-20 | Chip transfer substrate, transfer device and chip transfer method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115223911A true CN115223911A (en) | 2022-10-21 |
Family
ID=83604873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110426192.2A Pending CN115223911A (en) | 2021-04-20 | 2021-04-20 | Chip transfer substrate, transfer device and chip transfer method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115223911A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117410395A (en) * | 2023-10-07 | 2024-01-16 | 海目星激光科技集团股份有限公司 | Micro LED transfer method |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737799B1 (en) * | 2002-11-19 | 2004-05-18 | Au Optronics Corporation | Active matrix organic light emitting diode display and fabrication method of the same |
| US20140312368A1 (en) * | 2013-04-19 | 2014-10-23 | Lextar Electronics Corporation | Led display and manufacturing method thereof |
| CN108122814A (en) * | 2017-10-27 | 2018-06-05 | 江西乾照光电有限公司 | The sorting transfer method of LED core particle in a kind of LED chip |
| WO2019015683A1 (en) * | 2017-07-21 | 2019-01-24 | 亿光电子工业股份有限公司 | Light-emitting device and manufacturing method therefor, and light-emitting assembly |
| CN109950183A (en) * | 2019-04-11 | 2019-06-28 | 深圳市丰泰工业科技有限公司 | Once shift the die bond technique of multiple chips |
| CN110429052A (en) * | 2019-08-12 | 2019-11-08 | 厦门乾照光电股份有限公司 | A kind of chip selectivity method for carrying |
| CN110797295A (en) * | 2019-11-15 | 2020-02-14 | 广东省半导体产业技术研究院 | Chip transfer method and device |
| CN110993749A (en) * | 2019-12-09 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method of micro light-emitting diode and display panel |
| CN111081604A (en) * | 2019-12-02 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Micro-LED transfer device and micro-LED transfer method |
| CN111477650A (en) * | 2020-04-16 | 2020-07-31 | 广东工业大学 | A kind of Micro-LED mass transfer method and transfer device |
| CN111584408A (en) * | 2020-06-01 | 2020-08-25 | 广东工业大学 | A Micro-LED Mass Transfer Device and Method Based on Phase Mask Interference |
-
2021
- 2021-04-20 CN CN202110426192.2A patent/CN115223911A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6737799B1 (en) * | 2002-11-19 | 2004-05-18 | Au Optronics Corporation | Active matrix organic light emitting diode display and fabrication method of the same |
| US20140312368A1 (en) * | 2013-04-19 | 2014-10-23 | Lextar Electronics Corporation | Led display and manufacturing method thereof |
| WO2019015683A1 (en) * | 2017-07-21 | 2019-01-24 | 亿光电子工业股份有限公司 | Light-emitting device and manufacturing method therefor, and light-emitting assembly |
| CN108122814A (en) * | 2017-10-27 | 2018-06-05 | 江西乾照光电有限公司 | The sorting transfer method of LED core particle in a kind of LED chip |
| CN109950183A (en) * | 2019-04-11 | 2019-06-28 | 深圳市丰泰工业科技有限公司 | Once shift the die bond technique of multiple chips |
| CN110429052A (en) * | 2019-08-12 | 2019-11-08 | 厦门乾照光电股份有限公司 | A kind of chip selectivity method for carrying |
| CN110797295A (en) * | 2019-11-15 | 2020-02-14 | 广东省半导体产业技术研究院 | Chip transfer method and device |
| CN111081604A (en) * | 2019-12-02 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Micro-LED transfer device and micro-LED transfer method |
| CN110993749A (en) * | 2019-12-09 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Mass transfer method of micro light-emitting diode and display panel |
| CN111477650A (en) * | 2020-04-16 | 2020-07-31 | 广东工业大学 | A kind of Micro-LED mass transfer method and transfer device |
| CN111584408A (en) * | 2020-06-01 | 2020-08-25 | 广东工业大学 | A Micro-LED Mass Transfer Device and Method Based on Phase Mask Interference |
Non-Patent Citations (1)
| Title |
|---|
| 盛翠霞 等: "高分辨率CCD芯片FTF4052M的驱动系统设计", 《光学精密工程》, vol. 04, 15 April 2007 (2007-04-15), pages 564 - 569 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117410395A (en) * | 2023-10-07 | 2024-01-16 | 海目星激光科技集团股份有限公司 | Micro LED transfer method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI637481B (en) | Semiconductor structure, light emitting device and method of manufacturing same | |
| CN111477650B (en) | A kind of Micro-LED mass transfer method and transfer device | |
| JP7252032B2 (en) | Transfer substrate, mounting method using same, and method for manufacturing image display device | |
| KR102830402B1 (en) | Method of manufacturing a display apparatus and source susbrate structure | |
| JP6932676B2 (en) | Transfer method, manufacturing method of image display device using this, and transfer device | |
| TWI634371B (en) | Method of transferring small components | |
| CN114698401B (en) | Light-emitting diode substrate and manufacturing method thereof, and display device | |
| CN114008759A (en) | Light-induced selective transfer of components between substrates | |
| US20120142124A1 (en) | Method of applying phosphor to semiconductor light-emitting device | |
| JP6737613B2 (en) | Optical body and light emitting device | |
| JP2019507206A5 (en) | ||
| CN103187516A (en) | Deposition of phosphor on die top using dry film photoresist | |
| JP2013179219A (en) | Pattern forming apparatus and method of manufacturing semiconductor device | |
| JP2019220666A (en) | Sapphire substrate for forming semiconductor element, method of manufacturing the same, and method of transferring semiconductor element | |
| CN115223911A (en) | Chip transfer substrate, transfer device and chip transfer method | |
| WO2022241626A1 (en) | Carrier plate and transfer apparatus | |
| JP2020145243A (en) | Chip transfer plate, chip transfer method, image display device manufacturing method, and semiconductor device manufacturing method | |
| CN113711089A (en) | Radiation angle conversion element and light emitting device | |
| CN115513244A (en) | Temporary substrate, transfer method of light emitting diode chip and display assembly | |
| JP7640449B2 (en) | Display device manufacturing jig, display device manufacturing method, display device manufactured using the display device manufacturing jig, and display device manufactured using the display device manufacturing method | |
| TW201622968A (en) | Embossed film, sheet film, transfer material, and method for producing embossed film | |
| JP7269548B2 (en) | Holding member, transfer member, chip substrate, transfer member manufacturing method and manufacturing apparatus, light emitting substrate manufacturing method | |
| CN119836080B (en) | A miniLED packaging process and packaging structure | |
| TWI894926B (en) | Hybrid encapsulation film and method of manufacturing light emitting device using the same | |
| TWI848877B (en) | Microelectronic component transfer apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |