CN115275781B - Surface emitting laser based on polymer material and preparation method thereof - Google Patents
Surface emitting laser based on polymer material and preparation method thereof Download PDFInfo
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- 239000002861 polymer material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 161
- 229920000642 polymer Polymers 0.000 claims abstract description 85
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000005253 cladding Methods 0.000 claims abstract description 44
- 239000012792 core layer Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 32
- 229910000679 solder Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229920002100 high-refractive-index polymer Polymers 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010025 steaming Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009998 heat setting Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- Semiconductor Lasers (AREA)
Abstract
本发明公开了一种基于聚合物材料的面发射激光器及其制备工艺，该面发射激光器包括半导体激光芯片结构和聚合物波导结构；半导体激光芯片结构包括衬底和在衬底上生长的外延层，聚合物波导结构包括直波导结构和垂直发射结构，直波导结构中间为芯层，芯层由上包层和下包层包裹；半导体激光芯片结构的一部分掩埋在聚合物波导结构中，另一部分裸露在空气中，而聚合物波导结构远离半导体激光芯片结构的一端设置为垂直发射结构，该垂直发射结构为45°反射镜面结构或二阶光栅结构。本发明将有源器件边发射激光器与无源器件聚合物波导进行集成，实现激光出射方向由边发射转换为面发射，实现了面发射激光器的制备，制作工艺简单、易操作，成本低。
The present invention discloses a surface emitting laser based on polymer materials and a preparation process thereof, wherein the surface emitting laser comprises a semiconductor laser chip structure and a polymer waveguide structure; the semiconductor laser chip structure comprises a substrate and an epitaxial layer grown on the substrate, the polymer waveguide structure comprises a straight waveguide structure and a vertical emission structure, the straight waveguide structure has a core layer in the middle, and the core layer is wrapped by an upper cladding layer and a lower cladding layer; a part of the semiconductor laser chip structure is buried in the polymer waveguide structure, and the other part is exposed in the air, and one end of the polymer waveguide structure away from the semiconductor laser chip structure is set as a vertical emission structure, and the vertical emission structure is a 45° reflection mirror structure or a second-order grating structure. The present invention integrates an active device edge emitting laser with a passive device polymer waveguide, realizes the conversion of the laser emission direction from edge emission to surface emission, realizes the preparation of the surface emitting laser, and has a simple manufacturing process, easy operation, and low cost.
Description
Technical Field
The invention relates to the technical field of preparing surface-emitting semiconductor lasers, in particular to a surface-emitting laser based on a polymer material and a preparation method thereof.
Background
With the development of technology, surface-emitting semiconductor lasers have been receiving a lot of attention due to their unique advantages, and VCSEL semiconductor lasers (Vertical-Cavity Surface-EMITTING LASER) have been the main implementation of the current Surface-emitting lasers, and VCSELs can achieve higher wafer yield, round-like beams and a more simplified process flow than edge-emitting lasers.
The surface emitting laser of the medium short wave light such as purple light and blue-green light in the visible light wave band is mainly directly excited by gallium nitride GaN-based materials, and has the difficulty in the growth of a high reflectivity DBR structure in the short wave VCSEL laser, the improvement of current injection efficiency and the thermal management of the laser. Surface-emitting lasers for long-wavelength light in the visible wavelength band, such as red light, also present significant challenges in thermal management, because the higher emitted photon energy limits the x composition range of the DBR AlxGa1-xAs to 0.5-1.0, and the al composition ratio limits the refractive index range available for materials in the DBR structure, thus requiring more DBR layers to achieve the desired reflectivity, so that the high current impedance produced by the multi-layer DBR greatly aggravates the thermal effects of the device, affecting the lifetime and performance of the laser. In addition, in the process of manufacturing the surface-emitting semiconductor laser, a complicated semiconductor processing process is required to be performed on a minute semiconductor chip, and the process is complicated and difficult, and the manufacturing cost is high.
The integrated optics can combine optical devices with different functions, different materials and different structures into a highly integrated optical path so as to realize the integration and microminiaturization of an optical information processing system, and the inherent defects of large volume, poor stability, difficult alignment and collimation of the light beam of the traditional optical system are abandoned. Therefore, lasers with different materials and different wavelengths are integrated with the optical device, so that the manufacture of novel lasers with excellent characteristics can be realized, and the performance of the lasers is improved.
Polymer waveguides are important branches of integrated optics, and are attracting attention in modern optical communications due to their low cost, small volume, simple fabrication process, good compatibility, low light absorption loss, and the like, and their ease of processing and ability to be well compatible with existing integration processes. In recent years, with the continuous improvement of the performance of polymer optical materials, the application of low-loss and high-stability polymer waveguides in optical waveguide resonant cavities is rapidly expanded, and the polymer waveguides become research hot spots in the field of integrated photonic devices.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a surface-emitting laser based on a polymer material and a preparation method thereof, wherein the active device side-emitting laser and a passive device polymer waveguide are integrated, so that the laser emitting direction is converted from side emission to surface emission, the preparation of the surface-emitting laser is realized, the prepared surface-emitting laser has better performance, and meanwhile, the preparation process is simple, the operation is easy, and the cost is low.
To achieve the above object, one or more embodiments of the present invention provide the following technical solutions:
In a first aspect, the present invention provides a surface emitting laser based on a polymeric material.
A surface emitting laser based on a polymer material, comprising a semiconductor laser chip structure and a polymer waveguide structure;
The semiconductor laser chip structure comprises a substrate and an epitaxial layer grown on the substrate, wherein the epitaxial layer is respectively provided with a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top in sequence; the polymer waveguide structure comprises a straight waveguide structure and a vertical emission structure, wherein a core layer is arranged in the middle of the straight waveguide structure and is wrapped by an upper cladding layer and a lower cladding layer;
one part of the semiconductor laser chip structure is buried in the polymer waveguide structure, the other part of the semiconductor laser chip structure is exposed in the air, and one end of the polymer waveguide structure, which is far away from the semiconductor laser chip structure, is arranged into a vertical emission structure.
Further technical scheme still includes the substrate, the substrate holds semiconductor laser chip structure and polymer waveguide structure, be equipped with the solder layer between substrate and semiconductor laser chip structure and the polymer waveguide structure.
According to a further technical scheme, the upper surface of the exposed part of the semiconductor laser chip structure is covered with an insulating layer, a P-surface metal layer is plated on the insulating layer, and the P-surface metal layer is used as a P-surface electrode to be connected with the electrode; the insulating layer is internally provided with a current injection window, and the P-surface metal layer is directly contacted with the semiconductor laser chip structure at the current injection window.
According to a further technical scheme, the left end of the semiconductor laser chip structure is plated with a high-reflection film, the right end of the semiconductor laser chip structure is plated with an antireflection film, and the refractive index of the antireflection film is smaller than that of the polymer.
According to a further technical scheme, the vertical emission structure is formed by utilizing the shapeability of a polymer material to manufacture a specific laser emission structure, and comprises a 45-degree reflecting mirror surface structure and a second-order grating structure.
According to a further technical scheme, the lower edge of the core layer in the polymer waveguide structure is flush with the lower edge of the active layer in the semiconductor laser chip structure.
According to a further technical scheme, the refractive index of the core layer is larger than that of the lower cladding layer, and the refractive index of the lower cladding layer is larger than that of the upper cladding layer.
According to a further technical scheme, the material of the lower cladding layer in the polymer waveguide structure is a polymer with a low refractive index; or directly using the solder layer as the lower cladding of the waveguide structure.
In a second aspect, the present invention provides a method for preparing a surface emitting laser based on a polymeric material, comprising the steps of:
preparing an epitaxial layer on a gallium arsenide substrate by using an MOCVD process;
Making an insulating layer and a current injection window on the epitaxial layer through photoetching and PECVD processes;
depositing metal solder on the substrate by electron beam evaporation;
Preparing an edge-emitting laser by cleavage and electron beam steaming;
coating a polymer on the gallium arsenide substrate with the solder layer through spin coating;
preparing a vertical emission structure and a chip fixing clamping groove based on the polymer;
Cleaning by an acetone solvent, then placing in a nitrogen environment for hot baking, placing the chip in a clamping groove, and melting the solder layer by means of rapid heating and cooling so as to bond the chip.
According to a further technical scheme, the preparation of the vertical emission structure and the chip fixing clamping groove based on the polymer specifically comprises the following steps:
the waveguides, 45 ° mirror structures and chip-mounting card slots are fabricated on the polymer by scribing or gray scale mask lithography.
According to a further technical scheme, the preparation of the vertical emission structure and the chip fixing clamping groove based on the polymer comprises the following steps:
preparing a waveguide, a grating structure and a chip fixing clamping groove on the high refractive index polymer layer in an ultraviolet exposure and development mode;
and coating a layer of low polymer on the waveguide and the grating structure by a spin coating method to serve as an upper cladding layer, or directly taking air with refractive index lower than that of the core polymer as the upper cladding layer of the waveguide and the grating structure.
The technical scheme has the following beneficial effects:
(1) According to the surface emitting laser based on the polymer material and the preparation method thereof, the active device side emitting laser and the passive device polymer waveguide are integrated, so that the laser emitting direction is converted from side emission to surface emission, the preparation of the surface emitting laser is realized, the prepared surface emitting laser has better performance, and meanwhile, the preparation process is simple, easy to operate and low in cost.
(2) The invention makes full use of the light transmission characteristic of the polymer, and makes a coupling structure outside the semiconductor laser chip, so that a complex semiconductor processing technology is not required on a tiny chip structure.
(3) The invention uses the photo-setting and heat-setting characteristics of the polymer material, which is basically consistent with the photoetching technology in the semiconductor technology, so that the processing and the manufacturing are simple, and the operation is easy.
(4) The polymer waveguide structure has high operability, not only can realize the function of surface emission, but also can realize the shaping of laser beams through specific structural design.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
FIG. 1 is a diagram showing a structure of a laser device for performing surface emission by using a 45 degree inclined plane structure in accordance with a first embodiment of the present invention;
FIG. 2 is a diagram of a structure of a laser for performing surface emission using a second-order grating structure in a second embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating light propagation of a surface emitting laser according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a chip in a surface-emitting laser according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a chip cavity surface in a surface emitting laser according to an embodiment of the present invention;
fig. 6 shows a straight waveguide structure in a surface emitting laser according to an embodiment of the present invention.
The semiconductor device comprises a chip structure, a polymer waveguide, a chip structure, a substrate, a core layer, a low cladding layer, a metal layer, a substrate, a core layer, a 7-45-degree reflecting mirror, a second-order grating, a 9-degree antireflection film, a 10-degree antireflection film, a 11-degree antireflection film, an electrode, a 12-degree active layer, a 13-degree upper waveguide layer, a 14-degree lower waveguide layer, a 15-degree lower confinement layer, a 16-degree substrate, a 17-degree upper confinement layer, a 18-degree upper cladding layer, a 19-degree vertical emission structure, a 20-degree insulating layer, a 21-degree P-surface metal layer, a 22-degree epitaxial layer, a 23-degree current injection window, a 24-degree straight waveguide structure.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
Example 1
The present embodiment proposes a surface-emitting laser based on a polymer material, as shown in fig. 1 and 3, including a semiconductor laser chip structure 1 and a polymer waveguide structure 2, where the semiconductor laser chip structure 1, as shown in fig. 4, includes a substrate 16 and an epitaxial layer 22 grown on the substrate 16, and the epitaxial layer 22 is, from bottom to top, a lower confinement layer 15, a lower waveguide layer 14, an active layer 12, an upper waveguide layer 13, and an upper confinement layer 17, respectively; the polymer waveguide structure 2 comprises a straight waveguide structure 24 and a vertical emission structure 19, as shown in fig. 6, a core layer 6 is arranged in the middle of the straight waveguide structure, and the core layer 6 is wrapped by an upper cladding layer 18 and a lower cladding layer 4.
The semiconductor laser chip structure 1 is partially buried in the polymer waveguide structure 2, the other part is exposed in the air, and further, the semiconductor laser chip structure 1 is partially buried in the straight waveguide structure of the polymer waveguide structure 2, and the straight waveguide structure covers the chip structure, which is mainly determined by the size of the device.
The end of the polymer waveguide structure 2 remote from the semiconductor laser chip structure 1 is arranged as a vertical emission structure 19. The substrate 5 receives the semiconductor laser chip structure 1 and the polymer waveguide structure 2, and a solder layer 3 is arranged between the substrate 5 and the semiconductor laser chip structure 1 and the polymer waveguide structure 2.
As shown in fig. 5, the upper surface of the exposed portion of the semiconductor laser chip structure 1 (i.e., the upper surface of the exposed portion of the upper limiting layer 17) is covered with an insulating layer 20, and a P-side metal layer 21 is plated on the insulating layer 20, wherein a window exists in the insulating layer 20, so that the P-side metal layer 21 directly contacts the chip in the window, the window is a current injection window 23, the P-side metal layer 21 is used as a P-side electrode to be connected with the electrode 11, the lower surface of the semiconductor laser chip structure 1 fixes the chip structure on the substrate 5 through solder, the solder forms the solder layer 3, the solder layer 3 is used as an N-side electrode, and the solder layer 3 is a metal solder layer, so that the chip can be fixed and can be used as a conductive channel of the N-side electrode. Meanwhile, the left end of the semiconductor laser chip structure 1 (i.e., the end of the semiconductor laser chip structure not buried by the polymer waveguide structure) is plated with the high reflection film 10, and the right end thereof (i.e., the end of the semiconductor laser chip structure buried by the polymer waveguide structure) is plated with the antireflection film 9.
The vertical emission structure 19 is a specific laser emission structure made of a polymer material with shapeability, and in this embodiment, the vertical emission structure 19 is a 45 ° mirror structure, and a metal layer is plated on the 45 ° mirror structure.
As shown in fig. 3, after the P-side electrode and the N-side electrode of the semiconductor laser chip structure are energized, the active layer 12 of the chip structure generates laser resonance in the horizontal direction after the chip structure meets the lasing condition, and outputs from the antireflection film 9 at the right end of the chip structure, the refractive index of the material of the antireflection film 9 is smaller than that of the polymer, so that the possibility of coupling out laser is provided, the antireflection film 9 is used as an output end to be wrapped by the polymer waveguide structure 2, after the laser is output from the right end of the chip structure, the laser is directly coupled into the polymer waveguide structure, the waveguide structure limits light in the core layer 6, so that the laser propagates linearly, and when the laser is transmitted to the vertical emission structure 19 (here, the vertical emission structure in fig. 3 only indicates the propagation direction of light, and the specific structure can be the corresponding structure in fig. 1 or 2), the transmission direction of the light is deflected by 90 degrees, so that the horizontal linear transmission is changed into vertical output, and then the surface emission is realized.
The lower edge of the core layer 6 in the polymer waveguide structure 2 is flush with the lower edge of the active layer 12 in the semiconductor laser chip structure 1, and the thickness w a of the core layer 6 in the polymer waveguide structure 2 = the thickness w b of the active layer 12 in the semiconductor laser chip structure 1. Further, the thickness of the core layer 6 in the polymer waveguide structure is identical and level with the thickness of the active layer 12 in the chip structure. On this basis, the lower cladding layer 4 below the core layer 6 corresponds to the lower confinement layer 15 and the lower waveguide layer 14 below the active layer 12.
The middle layer of the polymer waveguide structure 2 is a core layer 6, the upper and lower sides of the core layer 6 are an upper cladding layer 18 and a lower cladding layer 4 respectively, the refractive index of the core layer 6 is larger than that of the upper and lower cladding layers, the condition that laser is transmitted in the core layer is provided, and further, in order to ensure single-mode transmission, the structure is provided with the following steps: the refractive index n 1 of the core layer is larger than the refractive index n 2 of the lower cladding layer and larger than the refractive index n 3 of the upper cladding layer.
Preferably, the material of the lower cladding layer 4 in the polymer waveguide structure 2 is a polymer with low refractive index, so that the polymer waveguide is satisfied, and the polymer structure is different from a silicon-based waveguide, and belongs to the field of polymer waveguides.
Preferably, the lower cladding layer 4 in the polymer waveguide structure 2 is directly coated on the solder layer 3, the polymer refractive index of the lower cladding layer 4 is smaller than the refractive index of the core layer, and the upper cladding layer is arranged above the core layer 6, and the refractive index of the upper cladding layer is smaller than the polymer refractive index of the lower cladding layer 4. It is further preferred that air having a refractive index lower than the core layer 6 and lower than the solder layer 3 is used as the upper cladding layer in the polymer waveguide structure 2. In practice, one of the transmission conditions of the waveguide is that the refractive index of the core layer is larger than that of the cladding layer, and if the refractive index of other materials meets the condition, the waveguide can also be used as the cladding layer, for example, an air layer with the refractive index of 1 is used as the upper cladding layer, and a solder layer with the refractive index of low is used as the lower cladding layer, so that the process step of coating other polymer materials is omitted, and the materials are saved, and meanwhile, the time and the labor are saved.
In the polymer waveguide structure 2, according to the single-mode transmission condition of light, the cutoff wavelength λ 0 needs to satisfy the following relation:
λc(TM0)<λ0<λc(TE0)
where λ c(TM0) represents the cutoff wavelength of TM 0 mode and λ c(TE0) represents the cutoff wavelength of TE 0 mode, whereby the relationship between the cutoff wavelength and the thickness of the core layer 6 in the polymer waveguide structure can be obtained, thereby determining the thickness of the core layer.
The width of the core layer 6 in the polymer waveguide structure 2 is determined according to the following relation:
Where W represents the width of the core layer, n represents the refractive index of the core layer in the polymer waveguide structure, and Δn represents the refractive index difference between the core layer and the cladding material.
The vertical emission structure 19 in the polymer waveguide structure can change the transmission direction of the horizontal laser light to the transmission in the vertical direction, so that the surface emission is realized, in this embodiment, the vertical emission structure 19 is configured as a 45 ° reflecting mirror structure, and when the incident light is incident into the structure, the refractive index of the surface material of the 45 ° reflecting mirror structure is high, and there is no great loss to the incident light, so that the light is refracted by 90 ° at the structure, so that the surface emission is realized.
The solder layer 3 comprises, but is not limited to, auSn, sn, in or other metal solders, and the melting point of the metal solders is lower and is smaller than the tolerance temperature of the polymer, so that the stability of the polymer waveguide structure is ensured; the substrate 5 includes, but is not limited to GaAs, inP, si, siC, siN substrates, which have good heat dissipation properties and can improve the stability of the device for long-term operation.
Preferably, the polymer material has strong plasticity, so that the polymer material can be used for manufacturing various waveguide structures, and the specific waveguide structure can play a role in adjusting the quality of output laser, for example, in a wedge-shaped waveguide structure, the single-mode output is ensured, and meanwhile, the power amplification effect can be obtained.
Preferably, the chip structure can be an array structure on a horizontal plane, and the output laser is coupled together through the waveguide channel and then emitted through the vertical emission structure, so that not only can the surface emission be realized, but also the output power can be ensured.
Example two
In this embodiment, as shown in fig. 2, the vertical emission structure 19 is a second-order grating structure 8, when incident light enters the second-order grating structure 8, two-order diffracted light is generated, the first-order diffracted light is reflected and resonated in the horizontal direction to provide light amplification, and the second-order diffracted light is emitted vertically at an angle of 90 ° to the incident direction, so that the light emitted horizontally is emitted vertically, thereby realizing the effect of surface emission.
Preferably, the refractive index of the polymer material is smaller than that of the semiconductor material, and the grating period is inversely proportional to the effective refractive index according to a calculation formula of the grating period, so that the grating period based on the polymer material is larger than that of the semiconductor material, and the process difficulty is reduced.
The calculation formula of the grating structure period is as follows:
Where N represents the order of the grating, N eff represents the effective refractive index of the material, and λ B represents the laser wavelength.
As the material of the second-order grating structure is a polymer material, the smaller the effective refractive index, the larger the period and the smaller the process difficulty according to the formula of the period of the grating structure. Preferably, the filler material in the second order grating structure is air or another polymeric material.
Example III
The embodiment provides a preparation method of a surface emitting laser based on a polymer material, wherein after a semiconductor laser chip is prepared through MOCVD (metal organic chemical vapor deposition), photoetching, corrosion, evaporation and other processes, a solder layer is evaporated on a substrate, then a polymer waveguide structure is prepared, and the chip is fixed on the substrate in the preparation process, so that the structure of the surface emitting laser is finally obtained.
The preparation method provided by the embodiment specifically comprises the following steps:
(1) And preparing an epitaxial layer on the gallium arsenide GaAs substrate by using an MOCVD process, wherein the epitaxial layer comprises a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer.
(2) The insulating layer and the current injection window are made through photoetching and PECVD processes, and current diffusion is limited.
(3) Metal solder is deposited on the substrate by electron beam evaporation.
(4) After the substrate is dissociated into the bar by cleavage, the high-reflection film and the antireflection film are respectively plated at the two ends of the bar by an electron beam evaporation method, and then the bar is dissociated again to prepare the edge-emitting laser chip. Specifically, the bar refers to a horizontal array of a plurality of laser chips, and in this step, the prepared wafer with the horizontal and vertical array structure is dissociated into the bar of the horizontal array, so that a plurality of chips can be coated at the same time, and after the coating, the chips are dissociated into single chips.
(5) And coating a layer of polymer serving as a lower cladding on the GaAs substrate with the solder layer by a spin coating method. It should be noted that the gallium arsenide substrate herein is different from the gallium arsenide substrate in the chip configuration and is used herein as a carrier substrate only.
(6) The 45-degree reflecting mirror surface structure, the waveguide structure and the chip fixing clamping groove are prepared on the polymer through a scribing or gray scale mask photoetching technology, are cleaned through acetone or other alcohol solvents, and are placed in a nitrogen environment for heat baking, so that the solidified polymer is further solidified. As shown in fig. 3, the lower cladding layer does not completely cover the solder layer, but exposes the clamping groove with the same size as the chip, so that the chip can be in direct contact with the solder layer, and the purpose of bonding the chip can be achieved under certain conditions.
(7) The chip is placed in the chip fixing clamping groove, and the solder layer is melted in a rapid heating and cooling mode to achieve the purpose of chip bonding.
Example IV
The embodiment provides a preparation method of a surface emitting laser based on a polymer material, wherein after a semiconductor laser chip is prepared through MOCVD (metal organic chemical vapor deposition), photoetching, corrosion, evaporation and other processes, a solder layer is evaporated on a substrate, then a polymer waveguide structure is prepared, and the chip is fixed on the substrate in the preparation process, so that the structure of the surface emitting laser is finally obtained.
The preparation method provided by the embodiment specifically comprises the following steps:
(1) An epitaxial layer 22 is prepared on the gallium arsenide GaAs substrate by using an MOCVD process, and the epitaxial layer is respectively a lower limiting layer 15, a lower waveguide layer 14, an active layer 12, an upper waveguide layer 13, an upper limiting layer 17 and an ohmic contact layer from bottom to top in sequence to prepare the chip structure.
(2) An insulating layer 20 and a current injection window 23 are manufactured on an epitaxial layer 22 of a chip structure through photoetching and PECVD processes, and diffusion of current is limited by the current injection window 23.
(3) A metal solder is deposited on the substrate 5 by electron beam evaporation.
(4) After the substrate 5 is dissociated into bars by cleavage, high reflection films and antireflection films are respectively plated at two ends of the bars by an electron beam evaporation method, and dissociated again to manufacture the edge-emitting laser chip. Specifically, the bar refers to a horizontal array of a plurality of laser chips, and in this step, the prepared wafer with the horizontal and vertical array structure is dissociated into the bar of the horizontal array, so that a plurality of chips can be coated at the same time, and after the coating, the chips are dissociated into single chips.
(5) And coating a layer of polymer serving as a lower cladding on the GaAs substrate with the solder layer by a spin coating method. It should be noted that the gallium arsenide substrate herein is different from the gallium arsenide substrate in the chip configuration and is used herein as a carrier substrate only.
(6) Preparing a waveguide, a grating structure and a chip fixing clamping groove on the high refractive index polymer layer in an ultraviolet exposure and development mode;
(7) Coating a layer of low polymer on the waveguide and the grating structure by a spin coating method to serve as an upper cladding layer, or directly taking air with refractive index lower than that of the core polymer as the upper cladding layer of the waveguide and the grating structure;
(8) Cleaning by acetone or other alcohol solvents, and then placing in a nitrogen environment for thermal baking to further solidify the solidified polymer, thereby obtaining a waveguide structure, a grating structure and a chip fixing clamping groove in the process;
(10) The chip structure is placed in the chip fixing clamping groove, and the solder layer is melted in a rapid heating and cooling mode to achieve the purpose of chip bonding.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
While the foregoing description of the embodiments of the present invention has been presented in conjunction with the drawings, it should be understood that it is not intended to limit the scope of the invention, but rather, it is intended to cover all modifications or variations within the scope of the invention as defined by the claims of the present invention.
While the foregoing description of the embodiments of the present invention has been presented in conjunction with the drawings, it should be understood that it is not intended to limit the scope of the invention, but rather, it is intended to cover all modifications or variations within the scope of the invention as defined by the claims of the present invention.
Claims (10)
1. A surface emitting laser based on polymer material, characterized by comprising a semiconductor laser chip structure and a polymer waveguide structure;
The semiconductor laser chip structure comprises a substrate and an epitaxial layer grown on the substrate, wherein the epitaxial layer is respectively provided with a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top in sequence; the polymer waveguide structure comprises a straight waveguide structure and a vertical emission structure, wherein a core layer is arranged in the middle of the straight waveguide structure and is wrapped by an upper cladding layer and a lower cladding layer;
one part of the semiconductor laser chip structure is buried in the polymer waveguide structure, the other part of the semiconductor laser chip structure is exposed in the air, and one end of the polymer waveguide structure, which is far away from the semiconductor laser chip structure, is arranged into a vertical emission structure.
2. A surface emitting laser based on a polymeric material as claimed in claim 1, further comprising a substrate, said substrate receiving the semiconductor laser chip structure and the polymeric waveguide structure, a solder layer being provided between said substrate and the semiconductor laser chip structure and the polymeric waveguide structure.
3. The surface-emitting laser based on polymer material according to claim 1, wherein an upper surface of the exposed portion of the semiconductor laser chip structure is covered with an insulating layer, the insulating layer is plated with a P-side metal layer, and the P-side metal layer is connected with the electrode as a P-side electrode; the insulating layer is internally provided with a current injection window, and the P-surface metal layer is directly contacted with the semiconductor laser chip structure at the current injection window.
4. The surface-emitting laser based on polymer material according to claim 1, wherein the semiconductor laser chip structure is coated with a high reflection film at a left end and an antireflection film at a right end, and the refractive index of the antireflection film is smaller than that of the polymer.
5. The surface emitting laser based on polymer material according to claim 1, wherein the vertical emission structure is a 45 ° reflecting mirror structure or a second order grating structure, and the specific laser emission structure is made by using the shapeability of the polymer material.
6. A polymer material based surface emitting laser as claimed in claim 1, wherein a lower edge of a core layer in the polymer waveguide structure is flush with a lower edge of an active layer in the semiconductor laser chip structure.
7. A surface emitting laser based on a polymeric material as claimed in claim 1, wherein the refractive index of said core layer is greater than the refractive index of the lower cladding layer, which is greater than the refractive index of the upper cladding layer.
8. A method for preparing a surface emitting laser based on a polymer material, comprising the steps of:
preparing an epitaxial layer on a gallium arsenide substrate by using an MOCVD process;
Making an insulating layer and a current injection window on the epitaxial layer through photoetching and PECVD processes;
depositing metal solder on the substrate by electron beam evaporation;
Preparing an edge-emitting laser chip by cleavage and an electron beam steaming method;
coating a polymer on the gallium arsenide substrate with the solder layer through spin coating;
preparing a vertical emission structure and a chip fixing clamping groove based on the polymer;
Cleaning by an acetone solvent, then placing in a nitrogen environment for hot baking, placing the chip in a clamping groove, and melting the solder layer by means of rapid heating and cooling so as to bond the chip.
9. The method for manufacturing a surface-emitting laser based on a polymer material according to claim 8, wherein the manufacturing of the vertical emission structure and the chip fixing groove based on the polymer specifically comprises:
the waveguides, 45 ° mirror structures and chip-mounting card slots are fabricated on the polymer by scribing or gray scale mask lithography.
10. The method for manufacturing a surface-emitting laser based on a polymer material according to claim 8, wherein the manufacturing of the vertical emission structure and the chip fixing groove based on the polymer specifically comprises:
preparing a waveguide, a grating structure and a chip fixing clamping groove on the high refractive index polymer layer in an ultraviolet exposure and development mode;
and coating a layer of low polymer on the waveguide and the grating structure by a spin coating method to serve as an upper cladding layer, or directly taking air with refractive index lower than that of the core polymer as the upper cladding layer of the waveguide and the grating structure.
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| CN110998393A (en) * | 2017-05-19 | 2020-04-10 | 阿道特公司 | Optical interconnect module with 3D polymer waveguides |
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| JP2017513056A (en) * | 2014-03-18 | 2017-05-25 | 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． | Grating coupler and manufacturing method thereof |
| US9746608B1 (en) * | 2014-12-11 | 2017-08-29 | Partow Technologies, Llc. | Integrated optical assembly apparatus and integrated fabrication method for coupling optical energy |
| CN112382926B (en) * | 2020-10-27 | 2022-03-18 | 厦门市三安集成电路有限公司 | Low-capacitance vertical cavity surface emitting laser and manufacturing method thereof |
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