CN115323359B - Deposition processing equipment - Google Patents
Deposition processing equipmentInfo
- Publication number
- CN115323359B CN115323359B CN202211108837.9A CN202211108837A CN115323359B CN 115323359 B CN115323359 B CN 115323359B CN 202211108837 A CN202211108837 A CN 202211108837A CN 115323359 B CN115323359 B CN 115323359B
- Authority
- CN
- China
- Prior art keywords
- air
- plate
- distribution channel
- holes
- furnace body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of film deposition and discloses a deposition treatment device, which comprises a furnace body, wherein an air inlet plate and an air exhaust plate are arranged in the furnace body, the air exhaust plate and the air inlet plate are oppositely arranged so as to enable a substrate to be arranged between the air inlet plate and the air exhaust plate, the air inlet plate and the air exhaust plate are provided with first air holes which are uniformly distributed, the air inlet plate and the air exhaust plate are also provided with second air holes, and the second air holes are communicated with the first air holes through an air distribution channel so as to enable air to flow between the first air holes and the second air holes. The first air holes are uniformly formed in the air suction plate and the air inlet plate, and the substrate is arranged between the air suction plate and the air inlet plate, so that the reaction area of the substrate is uniformly covered by the gas, and the uniformity of the deposited film layer is improved.
Description
Technical Field
The invention relates to the technical field of film deposition, in particular to a deposition treatment device.
Background
Plasma Enhanced Chemical Vapor Deposition (PECVD) ionizes a gas containing atoms constituting a thin film by means of microwaves or radio frequency, etc., to locally form plasma, which has strong chemical activity and easily reacts to deposit a desired thin film on a substrate. The plasma enhanced chemical vapor deposition equipment mainly comprises a loading chamber, a conveying chamber and a process deposition chamber.
At present, long tubules are generally adopted for extending from one end to the other end of the air inlet and the air outlet in the deposition chamber, so that the air coming out of the tubules cannot uniformly cover the whole reaction area of the matrix, uneven air distribution is caused, the uniformity of a deposited film layer is very poor, and the conversion efficiency of the battery is low.
Disclosure of Invention
The invention aims to provide a deposition treatment device, which adopts a plate type air inlet and outlet plate with uniformly distributed air holes, so that the reaction area of a substrate is uniformly covered by air, and the uniformity of a deposited film layer is improved.
To achieve the purpose, the invention adopts the following technical scheme:
A deposition processing apparatus comprising:
the furnace body is used for accommodating the substrate;
The air inlet plate is arranged in the furnace body;
The air suction plate and the air inlet plate are oppositely arranged in the furnace body so as to enable the substrate to be arranged between the air suction plate and the air inlet plate, wherein:
The air inlet plate and the air exhaust plate are provided with first air holes, second air holes and an air distribution channel, wherein the first air holes, the second air holes are uniformly arranged, the second air holes are communicated with external equipment, and the air distribution channel is communicated with the first air holes and the second air holes.
Preferably, the gas distribution channel further comprises a first gas distribution channel and a second gas distribution channel, the second gas holes are communicated with the first gas distribution channel, the first gas distribution channel is communicated with at least one second gas distribution channel, and the second gas distribution channel is communicated with a plurality of first gas holes.
Preferably, the gas distribution channel comprises a three-stage gas distribution channel, a plurality of first air holes are connected through the three-stage gas distribution channel to form a gas distribution unit, and a plurality of gas distribution units are communicated with the two-stage gas distribution channel.
Preferably, the path lengths from the connection part of the secondary gas distribution channel and the tertiary gas distribution channel in the gas distribution unit to the first gas holes in the gas distribution unit are equal.
Preferably, a sealing piece is arranged at a port of the furnace body.
Preferably, the end of the air inlet plate and/or the air exhaust plate is connected with the sealing piece so as to support and fix the air inlet plate and/or the air exhaust plate.
Preferably, the air inlet plate and/or the air exhaust plate are/is arranged on the inner cavity wall of the furnace body.
Preferably, the air extraction plate and the air inlet plate comprise two plate-shaped structures which are buckled with each other, each plate-shaped structure is provided with a half flow passage, and the half flow passages on the two plate-shaped structures are in butt joint to form the air distribution channel.
Preferably, the diameters of the first air hole and the second air hole on the air suction plate are not smaller than the diameters of the first air hole and the second air hole on the air intake plate.
Preferably, the furnace body is cylindrical or square.
The invention has the beneficial effects that:
the first air holes are uniformly formed in the air suction plate and the air inlet plate, and the substrate is arranged between the air suction plate and the air inlet plate, so that the reaction area of the substrate is uniformly covered by the gas, and the uniformity of the deposited film layer is improved.
Drawings
FIG. 1 is a schematic view of a deposition processing apparatus of the present invention;
FIG. 2 is an enlarged view at A in FIG. 1;
FIG. 3 is a view of the inside of a chamber of the deposition processing apparatus of the present invention;
FIG. 4 is a schematic view of an I-shaped gas distribution unit in the deposition processing apparatus of the present invention;
FIG. 5 is a schematic view of an X-shaped gas distribution unit in the deposition processing apparatus according to the present invention;
FIG. 6 is a schematic view of the third stage gas distribution channel of the deposition apparatus according to the present invention, wherein the gas distribution unit is X-shaped;
FIG. 7 is a diagram showing a distribution of first and second air holes in an air inlet plate and an air exhaust plate of a deposition processing apparatus according to the present invention;
FIG. 8 is a second distribution diagram of the first and second air holes in the air inlet plate and the air exhaust plate of the deposition processing apparatus according to the present invention;
FIG. 9 is a third distribution diagram of the first and second air holes in the air inlet plate and the air exhaust plate of the deposition processing apparatus according to the present invention;
FIG. 10 is a cross-sectional view of the upper half of the flow channel of the suction or intake plate in the deposition processing apparatus of the present invention.
In the figure:
1-first air holes, 2-second air holes, 3-air extraction plates, 4-air inlet plates, 5-substrates, 6-sealing pieces, 7-furnace bodies, 8-gas distribution channels, 81-first-stage gas distribution channels, 82-second-stage gas distribution channels, 83-third-stage gas distribution channels and 9-half flow channels.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
In the description of the present invention, unless explicitly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, and may, for example, be fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected through an intervening medium, or in communication between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "left", "right", and the like are orientation or positional relationships based on those shown in the drawings, merely for convenience of description and simplicity of operation, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the invention. Furthermore, the terms "first," "second," and the like, are used merely for distinguishing between descriptions and not for distinguishing between them.
As shown in figures 1-9, the invention provides a deposition treatment device, which comprises a furnace body 7, wherein the furnace body 7 is used for accommodating a substrate 5, an air inlet plate 4 is arranged in the furnace body 7, an air exhaust plate 3 is arranged in the furnace body 7 opposite to the air inlet plate 4 so as to enable the substrate 5 to be arranged between the air inlet plate 4 and the air exhaust plate 3, and first air holes 1, second air holes 2 communicated with external equipment and an air distribution channel 8 communicated with the first air holes 1 and the second air holes 2 are arranged on the air inlet plate 4 and the air exhaust plate 3.
Through evenly setting up first gas pocket 1 on bleed plate 3 and air inlet plate 4 to put matrix 5 between bleed plate 3 and air inlet plate 4, make the reaction area of matrix 5 evenly covered by gas, avoid appearing the reaction blind area.
In the following, the invention will be described in detail, as shown in fig. 1 and 2, a deposition processing apparatus includes a furnace body 7, where in this embodiment, the furnace body 7 is cylindrical, and can accommodate a plurality of substrates 5 for deposition, the substrates 5 may be electrode plate arrays, graphite boats, etc., and the furnace body 7 is made of stainless steel to improve the service life of the furnace body 7. In other embodiments, the furnace body 7 may be square, and the material thereof may be SiC, quartz or other metal materials except stainless steel, and the specific size of the furnace body 7 may be designed in advance according to the size of the substrate. An air inlet plate 4 and an air exhaust plate 3 are arranged in the furnace body 7, and the air exhaust plate 3 and the air inlet plate 4 are arranged opposite to each other so as to enable the substrate 5 to be arranged between the two. The air inlet plate 4 and the air exhaust plate 3 are provided with first air holes 1 which are uniformly distributed, the air inlet plate 4 and the air exhaust plate 3 are also provided with second air holes 2, and the second air holes 2 are communicated with the first air holes 1 through air distribution channels 8 so as to enable air to flow between the first air holes 1 and the second air holes 2. In the present embodiment, the second air hole 2 on the air intake plate 4 is connected to an external air supply device, and the second air hole 2 on the air exhaust plate 3 is connected to an air exhaust device. Further, the air can enter the furnace body 7 from the second air hole 2 of the air inlet plate 4 along the air distribution channel 8 from the first air hole 1 on the air inlet plate 4, the first air holes 1 are uniformly distributed on the air inlet plate 4 so that the air covers the whole matrix 5, and then the air is discharged from the second air hole 2 on the air inlet plate 3 through the air distribution channel 8 by the first air hole 1 on the air inlet plate 3, further, the air inlet plate 3 and the air inlet plate 4 respectively comprise two mutually buckled plate-shaped structures, each plate-shaped structure is provided with a half runner 9, the half runners 9 on the two plate-shaped structures are butted to form the air distribution channel 8, so that the air inlet plate 4 and the air inlet plate 3 are convenient to process and mold, the buckling mode is not required in the embodiment, and a pasting and fixing buckling mode or a buckling mode such as a buckling mode or a bolt and the like can be disassembled.
Specifically, the air distribution channel 8 comprises a first-stage air distribution channel 81 and a second-stage air distribution channel 82, the second air holes 2 are communicated with the first-stage air distribution channel 81, the first-stage air distribution channel 81 is communicated with at least one second-stage air distribution channel 82, the second-stage air distribution channel 82 is communicated with a plurality of first air holes 1, further, the air distribution channel 8 comprises a third-stage air distribution channel 83, a plurality of first air holes 1 are communicated through the third-stage air distribution channel 83 to form an air distribution unit, and it is understood that the densities of the first air holes 1 on the air inlet plate 4 and the air exhaust plate 3 can be designed according to deposition requirements in the early stage, so that the air distribution channels, such as a fourth-stage air distribution channel and a fifth-stage air distribution channel, can be continuously increased, so that the distribution density of the first air holes 1 can be continuously increased. In this embodiment, taking three stages as an example, a plurality of gas distribution units are communicated with the second gas distribution channel 82, and the path lengths from the connection part of the second gas distribution channel 82 and the third gas distribution channel 83 in the gas distribution unit to the first air holes 1 in the gas distribution unit are all equal, so as to ensure that each first air hole 1 of the air inlet plate 4 and the air exhaust plate 3 has the same gas flow. It should be noted that the air distribution unit may be formed in an i shape as shown in fig. 4, or may be formed in an X shape as shown in fig. 5 in other embodiments, and may be formed in an X shape as shown in fig. 6 when the three-stage air distribution channel 83 adopts an arc channel. The air distribution units are uniformly distributed on the air inlet plate 4 and the air exhaust plate 3 and are connected with the second air holes 2. The first air holes 1 can be uniformly distributed on the air inlet plate 4 and the air exhaust plate 3 through repeated arrangement of the air distribution units. Specifically, the air distribution patterns shown in fig. 7, 8 and 9 may be designed in advance according to the sizes and shapes of the specific air inlet plate 4 and the air exhaust plate 3, and it should be noted that, in this embodiment, the arrangement of the air distribution unit array may be adjusted according to the size of the substrate 5, and the arrangement pattern is based on the expansion of the air distribution units into square, parallelogram, rectangle or other special shapes. So that the first air holes 1 are uniformly distributed on the air inlet plate 4 and the air exhaust plate 3 to integrally cover the substrate 5, and the air distribution is more uniform.
Further, the diameter of the first air hole 1 and the diameter of the second air hole 2 on the air suction plate 3 are not smaller than the diameter of the first air hole 1 and the diameter of the second air hole 2 on the air intake plate 4. The second air holes 2 and the first air holes 1 on the air suction plate 3 can be prevented from being blocked by dust accumulation, and the cleaning frequency is reduced.
Further, the air inlet plate 4 and/or the air exhaust plate 3 are arranged on the inner cavity wall of the furnace body 7, so as to provide mounting positions for the air inlet plate 4 and the air exhaust plate 3, and the air inlet plate and the air exhaust plate can be connected and fixed through bolts or other connecting pieces such as screws. It should be noted that, in other embodiments, the port of the furnace body 7 is provided with a sealing member 6, the sealing member 6 may be a fixed flange, the external pipeline may be used to introduce or extract gas through a flange hole of the fixed flange, and an end portion of the air inlet plate 4 and/or the air extraction plate 3 is connected to the sealing member 6, so as to support and fix the air inlet plate 4 and/or the air extraction plate 3.
In other embodiments, the air inlet plate 4, the air exhaust plate 3 and the inner cavity wall of the furnace body 7 may be integrally formed, for example, the upper wall of the furnace body 7 is the air inlet plate 4, the lower wall of the furnace body 7 is the air exhaust plate 3, or the air exhaust plate 3 is oppositely arranged left and right and front and back, so that installation components can be saved, and the whole cavity is more concise.
It is to be understood that the above examples of the present invention are provided for clarity of illustration only and are not limiting of the embodiments of the present invention. Various obvious changes, rearrangements and substitutions can be made by those skilled in the art without departing from the scope of the invention. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (8)
1. A deposition processing apparatus for plasma enhanced chemical vapor deposition, comprising:
the furnace body (7), the said furnace body (7) is used for holding the basal body (5);
the air inlet plate (4) is arranged in the furnace body (7);
The air suction plate (3), the air suction plate (3) and the air inlet plate (4) are oppositely arranged in the furnace body (7) so as to enable the substrate (5) to be arranged between the two, wherein:
The air inlet plate (4) and the air exhaust plate (3) are provided with uniformly arranged first air holes (1), second air holes (2) communicated with external equipment and air distribution channels (8) communicated with the first air holes (1) and the second air holes (2), so that the reaction area of the substrate (5) is uniformly covered by air, and the uniformity of a deposited film layer is improved;
The air distribution channel (8) further comprises a first-stage air distribution channel (81) and a second-stage air distribution channel (82), the second air holes (2) are communicated with the first-stage air distribution channel (81), the first-stage air distribution channel (81) is communicated with at least one second-stage air distribution channel (82), and the second-stage air distribution channel (82) is communicated with a plurality of first air holes (1);
The gas distribution channel (8) comprises a three-stage gas distribution channel (83), a plurality of first air holes (1) are connected through the three-stage gas distribution channel (83) to form gas distribution units, and the gas distribution units are communicated with the two-stage gas distribution channel (82).
2. The deposition processing apparatus according to claim 1, wherein the path lengths from the connection of the secondary gas distribution channel (82) and the tertiary gas distribution channel (83) in the gas distribution unit to the first gas holes (1) in the gas distribution unit are all equal.
3. A deposition processing apparatus as claimed in claim 1, wherein the furnace body (7) has a closure (6) at a port.
4. A deposition treatment apparatus as claimed in claim 3, wherein the end of the inlet plate (4) and/or the suction plate (3) is connected to the closure (6) to support and secure the inlet plate (4) and/or the suction plate (3).
5. The deposition treatment device according to claim 1, characterized in that the gas inlet plate (4) and/or the gas exhaust plate (3) are arranged on the inner chamber wall of the furnace body (7).
6. The deposition treatment device according to claim 1, wherein the air extraction plate (3) and the air intake plate (4) each comprise two mutually buckled plate-shaped structures, each plate-shaped structure is provided with a half flow passage (9), and the half flow passages (9) on the two plate-shaped structures are butted to form the air distribution channel (8).
7. The deposition processing apparatus according to claim 1, wherein the diameters of the first air holes (1) and the second air holes (2) on the air suction plate (3) are not smaller than the diameters of the first air holes (1) and the second air holes (2) on the air suction plate (4).
8. The deposition treatment device according to claim 1, characterized in that the furnace body (7) is cylindrical or square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211108837.9A CN115323359B (en) | 2022-09-13 | 2022-09-13 | Deposition processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211108837.9A CN115323359B (en) | 2022-09-13 | 2022-09-13 | Deposition processing equipment |
Publications (2)
| Publication Number | Publication Date |
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| CN115323359A CN115323359A (en) | 2022-11-11 |
| CN115323359B true CN115323359B (en) | 2025-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211108837.9A Active CN115323359B (en) | 2022-09-13 | 2022-09-13 | Deposition processing equipment |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118361922B (en) * | 2024-06-20 | 2024-10-11 | 德沪涂膜设备(苏州)有限公司 | Perovskite vacuum drying device |
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| FR2930562B1 (en) * | 2008-04-28 | 2010-06-04 | Acerde | REACTOR AND METHOD FOR DEPOSITION AGAINST A SUBTRACT OF MATERIAL FROM THE DECOMPOSITION OF A GAS |
| DE102013101534A1 (en) * | 2013-02-15 | 2014-08-21 | Aixtron Se | Gas distributor for a CVD reactor |
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Address after: 518122 No. 1 Jikang Road, Kengzi Street, Pingshan District, Shenzhen, Guangdong, China Applicant after: Shenzhen Laplace Energy Co.,Ltd. Address before: 518122 No. 1 Jikang Road, Kengzi Street, Pingshan District, Shenzhen, Guangdong, China Applicant before: SHENZHEN LAPLACE ENERGY TECHNOLOGY Co.,Ltd. Address after: 518122 No. 1 Jikang Road, Kengzi Street, Pingshan District, Shenzhen, Guangdong, China Applicant after: Laplace New Energy Technology Co.,Ltd. Address before: 518122 No. 1 Jikang Road, Kengzi Street, Pingshan District, Shenzhen, Guangdong, China Applicant before: Shenzhen Laplace Energy Co.,Ltd. |
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