CN115377651A - Antenna package - Google Patents
Antenna package Download PDFInfo
- Publication number
- CN115377651A CN115377651A CN202210541784.3A CN202210541784A CN115377651A CN 115377651 A CN115377651 A CN 115377651A CN 202210541784 A CN202210541784 A CN 202210541784A CN 115377651 A CN115377651 A CN 115377651A
- Authority
- CN
- China
- Prior art keywords
- cavity
- conductive track
- package
- plastic element
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Details Of Aerials (AREA)
Abstract
Description
优先权priority
本申请要求于2021年5月18日提交的第2105186号法国申请的优先权权益,其内容通过引用以其整体并入到法律允许的最大程度。This application claims the benefit of priority from French Application No. 2105186, filed May 18, 2021, the contents of which are incorporated by reference in their entirety to the fullest extent permitted by law.
技术领域technical field
本公开总体上涉及电子设备,并且具体地,涉及包括位于封装件中的天线及其制造方法的设备。The present disclosure relates generally to electronic devices, and in particular, to devices including antennas in packages and methods of manufacturing the same.
背景技术Background technique
天线是用于发射(发射器)或接收(接收器)电磁波的元件。天线是无线电系统中的基本元件。An antenna is an element used to transmit (transmitter) or receive (receiver) electromagnetic waves. Antennas are fundamental elements in radio systems.
发明内容Contents of the invention
一个实施例提供了一种封装件,所述封装件包括:在上层中的堆叠,堆叠包括绝缘层和导电元件;由塑料制成的元件,元件搁置在所述堆叠上并且限定第一腔;以及天线,天线包括在堆叠中的第一导电轨道和在元件的第一腔的侧壁上的第二导电轨道。One embodiment provides a package comprising: a stack in an upper layer, the stack including an insulating layer and a conductive element; an element made of plastic resting on the stack and defining a first cavity; and an antenna comprising a first conductive track in the stack and a second conductive track on a side wall of the first cavity of the element.
另一实施例提供一种用于制造封装件的方法,为了形成上层,方法包括:形成包括绝缘层和导电元件的堆叠,并且包括形成天线的一部分的第一导电轨道;形成由塑料制成的元件,元件搁置在所述堆叠上,并且在元件和堆叠之间限定第一腔;以及形成搁置在元件的壁上的第二导电轨道。Another embodiment provides a method for manufacturing a package, in order to form the upper layer, the method includes: forming a stack comprising an insulating layer and a conductive element, and including a first conductive track forming part of the antenna; forming a an element resting on the stack and defining a first cavity between the element and the stack; and forming a second conductive track resting on a wall of the element.
根据一个实施例,第一腔填充有介电常数小于20的第一材料。According to one embodiment, the first cavity is filled with a first material having a dielectric constant less than 20.
根据一个实施例,封装件限定围绕第一腔的第二腔。According to one embodiment, the encapsulation defines a second cavity surrounding the first cavity.
根据一个实施例,第二腔通过壁与第一腔分离,壁延伸第一腔的整个高度并搁置在堆叠上。According to one embodiment, the second chamber is separated from the first chamber by a wall extending the entire height of the first chamber and resting on the stack.
根据一个实施例,第二腔包括沿着第二腔的至少一个侧壁延伸的第三传导轨道。According to one embodiment, the second cavity comprises a third conductive track extending along at least one side wall of the second cavity.
根据一个实施例,第三导电轨道包括在元件的第二壁上从堆叠延伸的第一部分和在第二腔的底部上延伸的第二部分。According to one embodiment, the third conductive track comprises a first portion extending from the stack on the second wall of the element and a second portion extending on the bottom of the second cavity.
根据一个实施例,第三导电轨道的第二部分与第二导电轨道的平面共面。According to one embodiment, the second portion of the third conductive track is coplanar with the plane of the second conductive track.
根据一个实施例,第三导电轨道的第二部分在与第二导电轨道的平面不同的平面中延伸。According to one embodiment, the second portion of the third conductive track extends in a different plane than the plane of the second conductive track.
根据一个实施例,第三导电轨道电耦合到第一导电轨道。According to one embodiment, the third conductive track is electrically coupled to the first conductive track.
根据一个实施例,第二腔填充有不同于填充第一腔的第一材料的第二材料。According to one embodiment, the second cavity is filled with a second material different from the first material filling the first cavity.
根据一个实施例,该方法包括,在形成元件之后,分别用第一材料和第二材料填充第一腔和第二腔。According to one embodiment, the method comprises, after forming the element, filling the first cavity and the second cavity with the first material and the second material, respectively.
根据一个实施例,封装件包括附接到所述上层并且在所述上层与所述下层之间限定第三腔的下层。According to one embodiment, the encapsulation comprises a lower layer attached to said upper layer and defining a third cavity between said upper layer and said lower layer.
根据一个实施例,封装件包括在第一导电轨道和第三腔之间延伸到堆叠中的第四导电轨道。According to one embodiment, the package comprises a fourth conductive track extending into the stack between the first conductive track and the third cavity.
根据一个实施例,元件由掺杂有非导电的无机金属化合物的热塑性材料制成。According to one embodiment, the element is made of a thermoplastic material doped with a non-conductive inorganic metal compound.
根据一个实施例,该元件通过激光直接结构化方法形成。According to one embodiment, the element is formed by a laser direct structuring method.
附图说明Description of drawings
将在以下对特定实施例的描述中详细描述前述特征和优点以及其它特征和优点,所述具体实施例通过说明而非限制的方式给出。The foregoing and other features and advantages will be described in detail in the following description of specific embodiments, given by way of illustration and not limitation.
图1是电子设备的一个实施例的截面图;Figure 1 is a cross-sectional view of one embodiment of an electronic device;
图2是电子设备的另一实施例的横截面图;Figure 2 is a cross-sectional view of another embodiment of an electronic device;
图3是电子设备的另一实施例的横截面图;3 is a cross-sectional view of another embodiment of an electronic device;
图4是电子设备的另一实施例的横截面图;Figure 4 is a cross-sectional view of another embodiment of an electronic device;
图5是电子设备的另一实施例的横截面图;以及5 is a cross-sectional view of another embodiment of an electronic device; and
图6表示用于制造图1的实施例的一部分的方法的示例。FIG. 6 shows an example of a method for manufacturing a part of the embodiment of FIG. 1 .
具体实施方式Detailed ways
在各个附图中,相同的特征由相同的附图标记表示。特别地,在各种实施例中共同的结构和/或功能特征可以具有相同的参考并且可以布置相同的结构、尺寸和材料特性。In the various figures, the same features are indicated by the same reference numerals. In particular, common structural and/or functional features may have the same references and may arrange the same structural, dimensional and material properties in the various embodiments.
为了清楚起见,仅详细示出和描述了可用于理解本文描述的实施例的操作和元件。For purposes of clarity, only the operations and elements useful for understanding the embodiments described herein have been shown and described in detail.
除非另有说明,否则当提及连接在一起的两个元件时,这表示没有除了导体之外的任何中间元件的直接连接,并且当提及耦合在一起的两个元件时,这表示这两个元件可以连接或者它们可以经由一个或多个其他元件耦合。Unless otherwise stated, when referring to two elements connected together, this means that there is no direct connection of any intermediate elements other than conductors, and when referring to two elements coupled together, it means that the two elements may be connected or they may be coupled via one or more other elements.
在以下公开中,除非另外指出,否则当提及绝对位置限定词时,诸如术语“前”、“后”、“顶”、“底”、“左”、“右”等,或相对位置限定词,诸如术语“上方”、“下方”、“更高”、“更低”等,或对于定向的限定词,例如“水平”、“竖直”等,参考附图中所示的定向。In the following disclosure, unless otherwise indicated, when referring to absolute position qualifiers, such as the terms "front", "rear", "top", "bottom", "left", "right", etc., or relative position qualifiers Words such as the terms "above", "below", "higher", "lower", etc., or qualifiers for orientation such as "horizontal", "vertical", etc., refer to the orientation shown in the drawings.
除非另有说明,否则表述“约”、“大概”、“基本上”和“大约”表示在10%内,并且优选在5%内。The expressions "about", "approximately", "substantially" and "approximately" mean within 10%, and preferably within 5%, unless otherwise stated.
图1是电子设备10的一个实施例的截面图。设备10是天线设备,更具体地,是封装件中的天线(“AiP”)。FIG. 1 is a cross-sectional view of one embodiment of an
器件10包括集成电路芯片12。芯片12位于封装件中。因此,芯片12被封装件保护。天线14耦合到芯片12,以便允许芯片通过天线14发射或接收信号。
封装件包括例如支撑件(下层)16。支撑件16是(例如)半导体衬底,其包括(例如)电子组件或包括导电轨道的绝缘层的堆叠。The package includes, for example, a support (lower layer) 16 . The
该封装件还包括上层18。上层18和下层16通过导电元件20彼此附接。例如,上层18和下层16通过焊球焊接在一起,形成封装件的侧壁。焊球允许例如下层与上层的电连接。因此,芯片12位于其中的腔22被限定在下层与上层之间,并且在由导电元件20形成的金属环内。The package also includes an
备选地,芯片12可以位于封装件中的另一位置处。例如,芯片12可以位于堆叠24中,换句话说,由堆叠24的层组成。Alternatively,
上层18包括层的堆叠24。例如,堆叠24构成包括绝缘层和导电轨道的互连网络。例如,堆叠24包括绝缘层或介电层,例如不同介电材料的绝缘层或介电层。例如,堆叠24包括第一介电材料的下层26,即最靠近下层16。堆叠24包括搁置在第二介电材料的层26上的中间层28。第二材料优选不同于第一材料。堆叠24包括搁置在例如第一介电材料的层28上的上层30。The
例如,堆叠24包括与最靠近支撑件16的绝缘层的下侧齐平的金属柱32,即,最靠近腔22的层。支撑件16包括与其上表面(即,最靠近腔22的面)齐平的金属柱34,金属柱34位于柱32的对面。螺柱32和34允许上层和下层经由球20的电连接。例如,球20位于每个立柱32与相应的立柱34之间。For example,
天线14包括天线结构,包括例如堆叠24中的一个或多个金属层36或金属轨道,优选地在上层30之间。在图1所示的示例中,仅示出了一个层36。层36例如经由位于堆叠24中的导电轨道38耦合到芯片12。这允许芯片12激励层36以便发射或接收信号。层36例如还经由轨道38耦合到地。
例如,堆叠24包括由下层26围绕的金属轨道40,金属轨道40与芯片12相对地延伸,优选地与整个芯片12相对地延伸。轨道40形成用于芯片12的保护屏蔽。轨道40位于层36与芯片12之间。根据另一实施例,其中芯片12不位于层36的对面,可以不存在轨道40。For example, the
上层18还包括上元件42。元件42搁置在堆叠24上。元件42包括基部50。基部50例如是平面的。基部50与堆叠24相对地延伸,优选地与整个堆叠24相对地延伸。元件42还包括壁48和52。壁48和52位于基部50与堆叠24之间。更具体地,基部50搁置在壁48和52上。因此,基部由壁48和52支撑,并且壁48和52搁置在堆叠24上。The
元件42由塑料材料制成。例如,元件42由例如掺杂有非导电金属无机化合物的热塑性材料制成。元件42例如由基于环氧树脂的硬塑料制成。元件42包括基部50和壁48和52,并且优选地形成为构成盖的单个单元。
元件42限定内腔44。一旦元件42附接到堆叠,腔44就是封闭的腔,即在所有侧面上被包围的腔。腔44优选是中心的。腔44优选地面向保护层40。层40优选地在芯片12与腔44之间。腔44优选地面向层36。
腔44由基座50和堆叠24在第一方向(例如,竖直方向)上限定,并且在与第一尺寸(例如,水平面)正交的平面中由壁48限定。基部50形成腔的底部。壁48围绕腔44。
在图1的实施例中,元件42还限定封闭腔46。腔46优选地围绕腔44延伸。腔46优选地形成围绕腔44的环。腔46由壁48与腔44分开。In the embodiment of FIG. 1 ,
腔46由基部42和堆叠24沿第一方向(例如,竖直方向)限定,并且在与第一尺寸(例如,水平面)正交的平面中由壁48和壁52限定。壁52围绕腔46。基部50形成腔的底部。腔46围绕壁48。壁52因此形成元件42的外侧壁。壁52优选地与堆叠24的侧壁共面。
在图1的示例中,基部50具有基本上恒定的厚度。因此,根据图1的实施例,腔44和46的高度基本上相等。In the example of FIG. 1 , the
元件42附接到堆叠24。例如,元件42通过未表示的粘合剂层附接到堆叠24。
除了层36之外,天线14还包括位于腔44中的基座50上的导电层或轨道(贴片)54。层54优选由金属制成。层54位于层36的一部分的对面,或者更一般地,层36的集合形成天线的激发部分。层54允许发射通过层36的激发而获得的天线的信号。层54是电隔离的,特别是与层36电隔离的。换句话说,层54不与任何导电元件接触,并且特别地不与层36电耦合。In addition to
根据图1的实施例,天线14包括参与天线激励的次级部分导电层或轨道58。次级部分58优选为金属层,优选地是与层36相同的金属。次级部分58在元件42之上延伸到腔46中。次级部分58形成围绕腔44的导电环。因此,次级部分58在腔46的壁之上延伸。次级部分58从堆叠24延伸壁48、52中的一个的高度,优选地壁52的整个高度。次级部分58优选地在基部50的至少一部分(即,腔46的底部,优选地在层54的平面中)之上延伸到腔46中。因此,次级部分58的横截面视图优选为L形。因此,次级部分优选地包括指向堆叠24的腿部(leg),以及指向层54的腿部,例如与层54共面。According to the embodiment of FIG. 1 , the
次级部分58通过至少一个导电元件60(例如至少一个导电过孔或导电环)耦合到层36。至少一个导电元件60延伸穿过堆叠24的一个或多个绝缘层,以便到达层36。换句话说,至少一个导电元件60与层36接触并且延伸到堆叠24的上表面。次级部分58搁置成与元件60接触,该元件60与堆叠24的上表面齐平。
腔44填充有材料56。该材料具有例如小于20,优选小于10,更优选小于3,例如大于1的介电常数。材料56例如是空气。
腔46填充有第二材料47,优选地不同于填充腔44的第一材料。第二材料的介电常数例如小于20,优选小于10,更优选小于3,例如大于1。材料47例如是空气。备选地,材料47可以是与材料56相同的材料。备选地,材料47可以是导电材料。
基底50优选地具有小于100μm的厚度,优选地小于50μm。优选地,基座50尽可能薄,同时避免元件42的变形。从基部50延伸到堆叠24的壁48提供稳定器并且确保基部50不变形。
层54具有例如介于5μm到30μm之间的厚度。层58具有例如与层54相同的厚度。层58具有例如介于20μm到50μm之间的厚度。
层36和层40例如分开介于250μm到400μm之间的距离,例如基本上等于350μm。层54与层36之间的距离例如取决于由天线14发射或接收的波长范围。例如,对于频率基本上等于60GHz的信号,层54与层36之间的距离基本上等于400μm。优选地,层54与层36之间的距离大于150μm,例如大于200μm。
层54与层36之间的距离是天线封装件的重要特性。实际上,层54与层36之间的距离必须足够高以允许层54辐射透射信号。层54和层36由具有特别是介电常数的特性的材料进一步分隔开,从而允许有效的信号通道。The distance between
可以选择形成填充堆叠上的腔44的材料层并在层上形成层54。然而,根据使用方式来精确地选择层的厚度可能是不可能的。A layer of material may be selected to form that fills
图2是电子设备61的另一实施例的横截面图。FIG. 2 is a cross-sectional view of another embodiment of an
装置61与图1的装置10的不同之处在于,面向腔46的基部50的厚度不同于面向腔44的基部50的厚度,优选地大于基部50面向腔44的厚度。换句话说,腔46的高度小于腔44的高度。基部50的上表面,即距离腔44和46最远的表面是平面的。
层54和58位于它们各自的腔中,如结合图1所描述的。层58包括在壁52上方延伸的腿部和在基部50上方延伸并且因此不在与层54相同的平面中的腿部。
根据另一个实施例,在基部50上方延伸的层58的腿部与层54共面,并且基部50的面向腔46的厚度不同于基部50的面向腔44的厚度,优选地大于基部50的面向腔44的厚度。According to another embodiment, the legs of the
图3是电子设备70的另一实施例的截面图。FIG. 3 is a cross-sectional view of another embodiment of an
设备70与图1和图2的实施例的不同之处在于,设备70不包括腔46。因此,元件42形成单个腔44。腔44包括层54和材料56,如关于图1所描述的。横向围绕腔44的壁48形成元件42的侧壁,并且因此形成上层18的侧壁的一部分。因此,元件42对应于包括与腔44相对应的单个腔的块。壁48因此与堆叠24的侧壁共面。
堆叠24优选地不包括导电元件60。天线14不包括次级部分58。
图4为电子设备80的另一实施例的横截面图。FIG. 4 is a cross-sectional view of another embodiment of an
装置80与图1的实施例的不同之处在于,次级部分58不存在于腔46中。因此,腔46仅包括材料47。The
如在图3的实施例中,不存在导电元件60。As in the embodiment of FIG. 3 , the
图5是电子设备90的另一实施例的横截面图。FIG. 5 is a cross-sectional view of another embodiment of an
装置90与图1的实施例的不同之处在于,层54位于基部50的上表面上,即,元件42的上表面上。层54位于腔44的对面。层54例如在水平面中具有小于或等于腔44的尺寸的尺寸。因此,腔44仅填充有材料56。因此,次级部分58位于与包括层54的平面不同的平面中。特别地,搁置在基部50上的次级部分58的腿部不与层54共面。
图6示出了用于制造图1的实施例的一部分的示例方法。更具体地,图6包括四个截面图A、B、C和D,每个示出了用于制造图1的实施例的一部分的方法中的步骤。由视图A、B、C和D示出的步骤优选地是连续的。FIG. 6 illustrates an example method for fabricating a portion of the embodiment of FIG. 1 . More specifically, FIG. 6 includes four cross-sectional views A, B, C, and D, each illustrating a step in a method for manufacturing a portion of the embodiment of FIG. 1 . The steps shown by views A, B, C and D are preferably sequential.
图6的视图A示出了形成元件42或盖的步骤。优选地,通过将构成元件42的材料注射到具有元件42的期望形状的模具中来形成元件42。注射例如通过注射器或通过合适的元件来完成,例如作为用于制造元件42的机器的一部分。构成元件42的材料在注射期间优选为液体形式。然后,例如通过热处理,即通过增加其温度,使材料达到固相。然后去除模具。View A of FIG. 6 shows the steps of forming the
构成元件42的材料是塑料。构成元件42的材料优选为与激光直接成型(LDS)方法兼容的材料,换句话说,掺杂有非导电金属无机化合物的热塑性材料。The material constituting the
图6的视图B示出了层位置54和58的激光激活,以产生用于这些位置的金属化的基底。View B of FIG. 6 shows laser activation of
在图6的视图C所示的步骤期间,将元件42放置在化学镀槽组合物中。结果,在图6的视图B的步骤中激活的位置处形成层54和58。During the step shown in view C of FIG. 6,
备选地,在图6的步骤的视图B中激活的位置大于层54和58。因此,图6的视图C的步骤允许形成具有大于层54和58的尺寸的尺寸的金属层。然后蚀刻这些层以形成层54和58。Alternatively, the location activated in view B of the step of FIG. 6 is greater than
在图6的视图D的步骤中,腔44和46分别填充有材料56和47。例如,材料以液体形式沉积在腔中并且例如通过热处理(annealing)步骤凝固。In the step of view D of FIG. 6
在随后的未图示的步骤中,元件42被附接到堆叠24。In a subsequent step, not shown, the
图6示出了图1的实施例的制造。然而,通过修改图6的视图A中所示的模具的形状并且通过修改图6的视图B中的步骤的激光激活位置,所描述的方法适用于附图2至5的实施例。FIG. 6 illustrates the fabrication of the embodiment of FIG. 1 . However, by modifying the shape of the mold shown in view A of FIG. 6 and by modifying the laser activation position of the step in view B of FIG. 6 , the method described is applicable to the embodiments of FIGS. 2 to 5 .
对应于直接激光结构化方法的图6的步骤B和C可以由其他金属层沉积步骤替代,例如溅射步骤或喷涂步骤。然后,元件42的材料可以不同于结合图6的视图A论述的材料。然后,元件42可以由适合于形成元件42和用于沉积金属层的任何塑料材料制成。Steps B and C of FIG. 6 corresponding to the direct laser structuring method can be replaced by other metal layer deposition steps, such as sputtering steps or spraying steps. However, the material of
所描述的实施例的优点是可以更好地控制辐射导电层54(以其它方式称为“贴片”)与激励层36之间的距离。因此有利地可以减小该距离,以便减小封装件的尺寸,同时保持用于天线的操作的足够距离。An advantage of the described embodiment is that the distance between the radiating conductive layer 54 (otherwise referred to as a "patch") and the
所描述的实施例的另一优点是其允许独立于结构的类型而通过材料56分离层54和层36。实际上,该结构由塑料元件或盖42保持,并且材料56的强度不影响封装件的强度。Another advantage of the described embodiment is that it allows separation of
所描述的实施例的另一优点是可以选择彼此不同的、围绕层58的材料47和围绕层54的材料56。Another advantage of the described embodiment is that the
已经描述了各种实施例和变型。所属领域的技术人员将理解,可以组合这些实施例的某些特征,并且所属领域的技术人员将容易想到其它变型。Various embodiments and modifications have been described. Those skilled in the art will appreciate that certain features of these embodiments may be combined, and that other variations will readily occur to those skilled in the art.
最后,基于上文提供的功能描述,本文描述的实施例和变型的实际实施方式在本领域技术人员的能力范围内。Finally, based on the functional description provided above, the practical implementation of the embodiments and variants described herein is within the capabilities of a person skilled in the art.
Claims (29)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2105186A FR3123160B1 (en) | 2021-05-18 | 2021-05-18 | Antenna box |
| FR2105186 | 2021-05-18 | ||
| US17/742,039 | 2022-05-11 | ||
| US17/742,039 US12009572B2 (en) | 2021-05-18 | 2022-05-11 | Antenna package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115377651A true CN115377651A (en) | 2022-11-22 |
Family
ID=83740489
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221223744.6U Active CN217691621U (en) | 2021-05-18 | 2022-05-17 | Package member |
| CN202210541784.3A Pending CN115377651A (en) | 2021-05-18 | 2022-05-17 | Antenna package |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221223744.6U Active CN217691621U (en) | 2021-05-18 | 2022-05-17 | Package member |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN217691621U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN217691621U (en) * | 2021-05-18 | 2022-10-28 | 意法半导体(格勒诺布尔2)公司 | Package member |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487059A (en) * | 2010-12-02 | 2012-06-06 | 三星电子株式会社 | Stacked package structure |
| CN108879114A (en) * | 2017-05-16 | 2018-11-23 | 华为技术有限公司 | Integrated antenna packages structure and terminal |
| US20190036202A1 (en) * | 2017-07-28 | 2019-01-31 | The Antenna Company International N.V. | Component for a dual band antenna, a dual band antenna comprising said component, and a dual band antenna system |
| CN109671680A (en) * | 2017-10-16 | 2019-04-23 | 台湾积体电路制造股份有限公司 | The chip packaging piece of tube core structure and forming method thereof with different height |
| US20200098524A1 (en) * | 2018-09-21 | 2020-03-26 | Stmicroelectronics (Tours) Sas | Capacitor |
| CN217691621U (en) * | 2021-05-18 | 2022-10-28 | 意法半导体(格勒诺布尔2)公司 | Package member |
-
2022
- 2022-05-17 CN CN202221223744.6U patent/CN217691621U/en active Active
- 2022-05-17 CN CN202210541784.3A patent/CN115377651A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487059A (en) * | 2010-12-02 | 2012-06-06 | 三星电子株式会社 | Stacked package structure |
| CN108879114A (en) * | 2017-05-16 | 2018-11-23 | 华为技术有限公司 | Integrated antenna packages structure and terminal |
| US20190036202A1 (en) * | 2017-07-28 | 2019-01-31 | The Antenna Company International N.V. | Component for a dual band antenna, a dual band antenna comprising said component, and a dual band antenna system |
| CN109671680A (en) * | 2017-10-16 | 2019-04-23 | 台湾积体电路制造股份有限公司 | The chip packaging piece of tube core structure and forming method thereof with different height |
| US20200098524A1 (en) * | 2018-09-21 | 2020-03-26 | Stmicroelectronics (Tours) Sas | Capacitor |
| CN217691621U (en) * | 2021-05-18 | 2022-10-28 | 意法半导体(格勒诺布尔2)公司 | Package member |
Also Published As
| Publication number | Publication date |
|---|---|
| CN217691621U (en) | 2022-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7504721B2 (en) | Apparatus and methods for packaging dielectric resonator antennas with integrated circuit chips | |
| US7675465B2 (en) | Surface mountable integrated circuit packaging scheme | |
| CN1627562B (en) | Apparatus and method for constructing an antenna using vias in a substrate as radiating elements | |
| US20150207233A1 (en) | Dielectric resonator antenna | |
| US20160043455A1 (en) | Microwave Chip Package Device | |
| JP6058144B2 (en) | High frequency module | |
| US20120104574A1 (en) | Integrated antennas in wafer level package | |
| US20060276157A1 (en) | Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications | |
| US11289433B2 (en) | Semiconductor device packages and methods of manufacturing the same | |
| CN102881986A (en) | Semiconductor package | |
| US9245859B2 (en) | Wireless module | |
| JP5919398B2 (en) | Semiconductor module and method for manufacturing the semiconductor module | |
| CN107265393B (en) | Semiconductor Devices Containing MEMS Dies | |
| TWI722913B (en) | Semiconductor package | |
| JP6622649B2 (en) | Non-contact communication module | |
| CN114843722A (en) | Radio frequency device and method for manufacturing radio frequency device | |
| CN115377651A (en) | Antenna package | |
| EP3836207B1 (en) | Semiconductor structure and method for manufacturing a semiconductor structure | |
| CN113258256B (en) | Antenna module | |
| US10021790B2 (en) | Module with internal wire fence shielding | |
| KR20160026920A (en) | Electronic device having a lead with selectively modified electrical properties | |
| US11121467B2 (en) | Semiconductor package with compact antenna formed using three-dimensional additive manufacturing process | |
| US12009572B2 (en) | Antenna package | |
| CN110021563B (en) | Electronic package | |
| EP4213297B1 (en) | Antenna layer structures separated by fluid-filled cavity, an antenna inlay, and a component carrier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |