[go: up one dir, main page]

CN115377651A - Antenna package - Google Patents

Antenna package Download PDF

Info

Publication number
CN115377651A
CN115377651A CN202210541784.3A CN202210541784A CN115377651A CN 115377651 A CN115377651 A CN 115377651A CN 202210541784 A CN202210541784 A CN 202210541784A CN 115377651 A CN115377651 A CN 115377651A
Authority
CN
China
Prior art keywords
cavity
conductive track
package
plastic element
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210541784.3A
Other languages
Chinese (zh)
Inventor
R·科菲
G·基米希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Original Assignee
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR2105186A external-priority patent/FR3123160B1/en
Application filed by STMicroelectronics Grenoble 2 SAS, STMicroelectronics Alps SAS filed Critical STMicroelectronics Grenoble 2 SAS
Publication of CN115377651A publication Critical patent/CN115377651A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Details Of Aerials (AREA)

Abstract

Embodiments of the present disclosure generally relate to antenna packages. A package includes an upper layer mounted to a lower layer. The upper layer comprises a stack of insulating layers and conductive elements and comprises a first conductive track of the antenna. The plastic element rests on the stack. A first cavity is defined in the plastic element. The second electrically conductive track of the antenna is located on a wall of the plastic element (e.g. in or adjacent the first cavity). A second cavity is also defined in the plastic element surrounding the first cavity. The third conductive track of the antenna is located on a wall of the plastic element (e.g. in the second cavity). A third cavity is defined between the upper and lower layers, and an integrated circuit chip is mounted within the third cavity and electrically connected to the antenna.

Description

天线封装件Antenna package

优先权priority

本申请要求于2021年5月18日提交的第2105186号法国申请的优先权权益,其内容通过引用以其整体并入到法律允许的最大程度。This application claims the benefit of priority from French Application No. 2105186, filed May 18, 2021, the contents of which are incorporated by reference in their entirety to the fullest extent permitted by law.

技术领域technical field

本公开总体上涉及电子设备,并且具体地,涉及包括位于封装件中的天线及其制造方法的设备。The present disclosure relates generally to electronic devices, and in particular, to devices including antennas in packages and methods of manufacturing the same.

背景技术Background technique

天线是用于发射(发射器)或接收(接收器)电磁波的元件。天线是无线电系统中的基本元件。An antenna is an element used to transmit (transmitter) or receive (receiver) electromagnetic waves. Antennas are fundamental elements in radio systems.

发明内容Contents of the invention

一个实施例提供了一种封装件,所述封装件包括:在上层中的堆叠,堆叠包括绝缘层和导电元件;由塑料制成的元件,元件搁置在所述堆叠上并且限定第一腔;以及天线,天线包括在堆叠中的第一导电轨道和在元件的第一腔的侧壁上的第二导电轨道。One embodiment provides a package comprising: a stack in an upper layer, the stack including an insulating layer and a conductive element; an element made of plastic resting on the stack and defining a first cavity; and an antenna comprising a first conductive track in the stack and a second conductive track on a side wall of the first cavity of the element.

另一实施例提供一种用于制造封装件的方法,为了形成上层,方法包括:形成包括绝缘层和导电元件的堆叠,并且包括形成天线的一部分的第一导电轨道;形成由塑料制成的元件,元件搁置在所述堆叠上,并且在元件和堆叠之间限定第一腔;以及形成搁置在元件的壁上的第二导电轨道。Another embodiment provides a method for manufacturing a package, in order to form the upper layer, the method includes: forming a stack comprising an insulating layer and a conductive element, and including a first conductive track forming part of the antenna; forming a an element resting on the stack and defining a first cavity between the element and the stack; and forming a second conductive track resting on a wall of the element.

根据一个实施例,第一腔填充有介电常数小于20的第一材料。According to one embodiment, the first cavity is filled with a first material having a dielectric constant less than 20.

根据一个实施例,封装件限定围绕第一腔的第二腔。According to one embodiment, the encapsulation defines a second cavity surrounding the first cavity.

根据一个实施例,第二腔通过壁与第一腔分离,壁延伸第一腔的整个高度并搁置在堆叠上。According to one embodiment, the second chamber is separated from the first chamber by a wall extending the entire height of the first chamber and resting on the stack.

根据一个实施例,第二腔包括沿着第二腔的至少一个侧壁延伸的第三传导轨道。According to one embodiment, the second cavity comprises a third conductive track extending along at least one side wall of the second cavity.

根据一个实施例,第三导电轨道包括在元件的第二壁上从堆叠延伸的第一部分和在第二腔的底部上延伸的第二部分。According to one embodiment, the third conductive track comprises a first portion extending from the stack on the second wall of the element and a second portion extending on the bottom of the second cavity.

根据一个实施例,第三导电轨道的第二部分与第二导电轨道的平面共面。According to one embodiment, the second portion of the third conductive track is coplanar with the plane of the second conductive track.

根据一个实施例,第三导电轨道的第二部分在与第二导电轨道的平面不同的平面中延伸。According to one embodiment, the second portion of the third conductive track extends in a different plane than the plane of the second conductive track.

根据一个实施例,第三导电轨道电耦合到第一导电轨道。According to one embodiment, the third conductive track is electrically coupled to the first conductive track.

根据一个实施例,第二腔填充有不同于填充第一腔的第一材料的第二材料。According to one embodiment, the second cavity is filled with a second material different from the first material filling the first cavity.

根据一个实施例,该方法包括,在形成元件之后,分别用第一材料和第二材料填充第一腔和第二腔。According to one embodiment, the method comprises, after forming the element, filling the first cavity and the second cavity with the first material and the second material, respectively.

根据一个实施例,封装件包括附接到所述上层并且在所述上层与所述下层之间限定第三腔的下层。According to one embodiment, the encapsulation comprises a lower layer attached to said upper layer and defining a third cavity between said upper layer and said lower layer.

根据一个实施例,封装件包括在第一导电轨道和第三腔之间延伸到堆叠中的第四导电轨道。According to one embodiment, the package comprises a fourth conductive track extending into the stack between the first conductive track and the third cavity.

根据一个实施例,元件由掺杂有非导电的无机金属化合物的热塑性材料制成。According to one embodiment, the element is made of a thermoplastic material doped with a non-conductive inorganic metal compound.

根据一个实施例,该元件通过激光直接结构化方法形成。According to one embodiment, the element is formed by a laser direct structuring method.

附图说明Description of drawings

将在以下对特定实施例的描述中详细描述前述特征和优点以及其它特征和优点,所述具体实施例通过说明而非限制的方式给出。The foregoing and other features and advantages will be described in detail in the following description of specific embodiments, given by way of illustration and not limitation.

图1是电子设备的一个实施例的截面图;Figure 1 is a cross-sectional view of one embodiment of an electronic device;

图2是电子设备的另一实施例的横截面图;Figure 2 is a cross-sectional view of another embodiment of an electronic device;

图3是电子设备的另一实施例的横截面图;3 is a cross-sectional view of another embodiment of an electronic device;

图4是电子设备的另一实施例的横截面图;Figure 4 is a cross-sectional view of another embodiment of an electronic device;

图5是电子设备的另一实施例的横截面图;以及5 is a cross-sectional view of another embodiment of an electronic device; and

图6表示用于制造图1的实施例的一部分的方法的示例。FIG. 6 shows an example of a method for manufacturing a part of the embodiment of FIG. 1 .

具体实施方式Detailed ways

在各个附图中,相同的特征由相同的附图标记表示。特别地,在各种实施例中共同的结构和/或功能特征可以具有相同的参考并且可以布置相同的结构、尺寸和材料特性。In the various figures, the same features are indicated by the same reference numerals. In particular, common structural and/or functional features may have the same references and may arrange the same structural, dimensional and material properties in the various embodiments.

为了清楚起见,仅详细示出和描述了可用于理解本文描述的实施例的操作和元件。For purposes of clarity, only the operations and elements useful for understanding the embodiments described herein have been shown and described in detail.

除非另有说明,否则当提及连接在一起的两个元件时,这表示没有除了导体之外的任何中间元件的直接连接,并且当提及耦合在一起的两个元件时,这表示这两个元件可以连接或者它们可以经由一个或多个其他元件耦合。Unless otherwise stated, when referring to two elements connected together, this means that there is no direct connection of any intermediate elements other than conductors, and when referring to two elements coupled together, it means that the two elements may be connected or they may be coupled via one or more other elements.

在以下公开中,除非另外指出,否则当提及绝对位置限定词时,诸如术语“前”、“后”、“顶”、“底”、“左”、“右”等,或相对位置限定词,诸如术语“上方”、“下方”、“更高”、“更低”等,或对于定向的限定词,例如“水平”、“竖直”等,参考附图中所示的定向。In the following disclosure, unless otherwise indicated, when referring to absolute position qualifiers, such as the terms "front", "rear", "top", "bottom", "left", "right", etc., or relative position qualifiers Words such as the terms "above", "below", "higher", "lower", etc., or qualifiers for orientation such as "horizontal", "vertical", etc., refer to the orientation shown in the drawings.

除非另有说明,否则表述“约”、“大概”、“基本上”和“大约”表示在10%内,并且优选在5%内。The expressions "about", "approximately", "substantially" and "approximately" mean within 10%, and preferably within 5%, unless otherwise stated.

图1是电子设备10的一个实施例的截面图。设备10是天线设备,更具体地,是封装件中的天线(“AiP”)。FIG. 1 is a cross-sectional view of one embodiment of an electronic device 10 . Device 10 is an antenna device, more specifically, an antenna in a package ("AiP").

器件10包括集成电路芯片12。芯片12位于封装件中。因此,芯片12被封装件保护。天线14耦合到芯片12,以便允许芯片通过天线14发射或接收信号。Device 10 includes an integrated circuit chip 12 . Chip 12 is located in the package. Thus, chip 12 is protected by the package. Antenna 14 is coupled to chip 12 to allow the chip to transmit or receive signals through antenna 14 .

封装件包括例如支撑件(下层)16。支撑件16是(例如)半导体衬底,其包括(例如)电子组件或包括导电轨道的绝缘层的堆叠。The package includes, for example, a support (lower layer) 16 . The support 16 is, for example, a semiconductor substrate comprising, for example, electronic components or a stack of insulating layers including conductive tracks.

该封装件还包括上层18。上层18和下层16通过导电元件20彼此附接。例如,上层18和下层16通过焊球焊接在一起,形成封装件的侧壁。焊球允许例如下层与上层的电连接。因此,芯片12位于其中的腔22被限定在下层与上层之间,并且在由导电元件20形成的金属环内。The package also includes an upper layer 18 . The upper layer 18 and the lower layer 16 are attached to each other by conductive elements 20 . For example, the upper layer 18 and the lower layer 16 are soldered together by solder balls to form the sidewalls of the package. The solder balls allow, for example, electrical connection of the lower layer to the upper layer. The cavity 22 in which the chip 12 is located is thus defined between the lower and upper layers and within the metal ring formed by the conductive element 20 .

备选地,芯片12可以位于封装件中的另一位置处。例如,芯片12可以位于堆叠24中,换句话说,由堆叠24的层组成。Alternatively, chip 12 may be located at another location in the package. For example, chip 12 may be located in stack 24 , in other words, consist of layers of stack 24 .

上层18包括层的堆叠24。例如,堆叠24构成包括绝缘层和导电轨道的互连网络。例如,堆叠24包括绝缘层或介电层,例如不同介电材料的绝缘层或介电层。例如,堆叠24包括第一介电材料的下层26,即最靠近下层16。堆叠24包括搁置在第二介电材料的层26上的中间层28。第二材料优选不同于第一材料。堆叠24包括搁置在例如第一介电材料的层28上的上层30。The upper layer 18 includes a stack 24 of layers. For example, stack 24 constitutes an interconnection network comprising insulating layers and conductive tracks. For example, stack 24 includes insulating or dielectric layers, such as insulating or dielectric layers of different dielectric materials. For example, the stack 24 includes a lower layer 26 of a first dielectric material, ie, closest to the lower layer 16 . The stack 24 includes an intermediate layer 28 resting on a layer 26 of a second dielectric material. The second material is preferably different from the first material. Stack 24 includes an upper layer 30 resting on, for example, layer 28 of a first dielectric material.

例如,堆叠24包括与最靠近支撑件16的绝缘层的下侧齐平的金属柱32,即,最靠近腔22的层。支撑件16包括与其上表面(即,最靠近腔22的面)齐平的金属柱34,金属柱34位于柱32的对面。螺柱32和34允许上层和下层经由球20的电连接。例如,球20位于每个立柱32与相应的立柱34之间。For example, stack 24 includes metal posts 32 flush with the underside of the insulating layer closest to support 16 , ie, the layer closest to cavity 22 . The support 16 includes a metal post 34 flush with its upper surface (ie, the face closest to the cavity 22 ), opposite the post 32 . Studs 32 and 34 allow electrical connection of the upper and lower layers via ball 20 . For example, a ball 20 is positioned between each post 32 and a corresponding post 34 .

天线14包括天线结构,包括例如堆叠24中的一个或多个金属层36或金属轨道,优选地在上层30之间。在图1所示的示例中,仅示出了一个层36。层36例如经由位于堆叠24中的导电轨道38耦合到芯片12。这允许芯片12激励层36以便发射或接收信号。层36例如还经由轨道38耦合到地。Antenna 14 includes an antenna structure including, for example, one or more metal layers 36 or metal tracks in stack 24 , preferably between upper layers 30 . In the example shown in Figure 1, only one layer 36 is shown. Layer 36 is coupled to chip 12 , for example via conductive tracks 38 located in stack 24 . This allows chip 12 to actuate layer 36 in order to transmit or receive signals. Layer 36 is also coupled to ground, eg via track 38 .

例如,堆叠24包括由下层26围绕的金属轨道40,金属轨道40与芯片12相对地延伸,优选地与整个芯片12相对地延伸。轨道40形成用于芯片12的保护屏蔽。轨道40位于层36与芯片12之间。根据另一实施例,其中芯片12不位于层36的对面,可以不存在轨道40。For example, the stack 24 includes a metal track 40 surrounded by the lower layer 26 , the metal track 40 extending opposite the chip 12 , preferably extending opposite the entire chip 12 . Track 40 forms a protective shield for chip 12 . Track 40 is located between layer 36 and chip 12 . According to another embodiment, where chip 12 is not located opposite layer 36 , track 40 may not be present.

上层18还包括上元件42。元件42搁置在堆叠24上。元件42包括基部50。基部50例如是平面的。基部50与堆叠24相对地延伸,优选地与整个堆叠24相对地延伸。元件42还包括壁48和52。壁48和52位于基部50与堆叠24之间。更具体地,基部50搁置在壁48和52上。因此,基部由壁48和52支撑,并且壁48和52搁置在堆叠24上。The upper layer 18 also includes an upper element 42 . Component 42 rests on stack 24 . Element 42 includes a base 50 . The base 50 is, for example, planar. The base 50 extends opposite the stack 24 , preferably the entire stack 24 . Element 42 also includes walls 48 and 52 . Walls 48 and 52 are located between base 50 and stack 24 . More specifically, base 50 rests on walls 48 and 52 . Thus, the base is supported by the walls 48 and 52 , and the walls 48 and 52 rest on the stack 24 .

元件42由塑料材料制成。例如,元件42由例如掺杂有非导电金属无机化合物的热塑性材料制成。元件42例如由基于环氧树脂的硬塑料制成。元件42包括基部50和壁48和52,并且优选地形成为构成盖的单个单元。Element 42 is made of plastic material. For example, element 42 is made of a thermoplastic material, for example doped with a non-conductive metal-inorganic compound. Element 42 is made, for example, of hard plastic based on epoxy resin. Element 42 includes base 50 and walls 48 and 52, and is preferably formed as a single unit constituting the cover.

元件42限定内腔44。一旦元件42附接到堆叠,腔44就是封闭的腔,即在所有侧面上被包围的腔。腔44优选是中心的。腔44优选地面向保护层40。层40优选地在芯片12与腔44之间。腔44优选地面向层36。Element 42 defines a lumen 44 . Once the element 42 is attached to the stack, the cavity 44 is a closed cavity, ie a cavity that is enclosed on all sides. Cavity 44 is preferably central. Cavity 44 preferably faces protective layer 40 . Layer 40 is preferably between chip 12 and cavity 44 . Cavity 44 preferably faces layer 36 .

腔44由基座50和堆叠24在第一方向(例如,竖直方向)上限定,并且在与第一尺寸(例如,水平面)正交的平面中由壁48限定。基部50形成腔的底部。壁48围绕腔44。Cavity 44 is defined by base 50 and stack 24 in a first direction (eg, a vertical direction) and by walls 48 in a plane orthogonal to a first dimension (eg, a horizontal plane). The base 50 forms the bottom of the cavity. Wall 48 surrounds cavity 44 .

在图1的实施例中,元件42还限定封闭腔46。腔46优选地围绕腔44延伸。腔46优选地形成围绕腔44的环。腔46由壁48与腔44分开。In the embodiment of FIG. 1 , element 42 also defines a closed cavity 46 . Cavity 46 preferably extends around cavity 44 . Cavity 46 preferably forms a ring around cavity 44 . Cavity 46 is separated from cavity 44 by wall 48 .

腔46由基部42和堆叠24沿第一方向(例如,竖直方向)限定,并且在与第一尺寸(例如,水平面)正交的平面中由壁48和壁52限定。壁52围绕腔46。基部50形成腔的底部。腔46围绕壁48。壁52因此形成元件42的外侧壁。壁52优选地与堆叠24的侧壁共面。Cavity 46 is defined by base 42 and stack 24 in a first direction (eg, vertical direction) and by walls 48 and 52 in a plane orthogonal to a first dimension (eg, horizontal). Wall 52 surrounds cavity 46 . The base 50 forms the bottom of the cavity. Cavity 46 surrounds wall 48 . The wall 52 thus forms the outer side wall of the element 42 . Wall 52 is preferably coplanar with the side walls of stack 24 .

在图1的示例中,基部50具有基本上恒定的厚度。因此,根据图1的实施例,腔44和46的高度基本上相等。In the example of FIG. 1 , the base 50 has a substantially constant thickness. Thus, according to the embodiment of FIG. 1 , cavities 44 and 46 are substantially equal in height.

元件42附接到堆叠24。例如,元件42通过未表示的粘合剂层附接到堆叠24。Element 42 is attached to stack 24 . For example, element 42 is attached to stack 24 by an adhesive layer not shown.

除了层36之外,天线14还包括位于腔44中的基座50上的导电层或轨道(贴片)54。层54优选由金属制成。层54位于层36的一部分的对面,或者更一般地,层36的集合形成天线的激发部分。层54允许发射通过层36的激发而获得的天线的信号。层54是电隔离的,特别是与层36电隔离的。换句话说,层54不与任何导电元件接触,并且特别地不与层36电耦合。In addition to layer 36 , antenna 14 includes a conductive layer or track (patch) 54 on a base 50 in cavity 44 . Layer 54 is preferably made of metal. Layer 54 is located opposite a portion of layer 36, or more generally, the collection of layers 36 that forms the active portion of the antenna. Layer 54 allows the emission of signals of the antenna obtained by excitation of layer 36 . Layer 54 is electrically isolated, in particular from layer 36 . In other words, layer 54 is not in contact with any conductive elements, and in particular is not electrically coupled with layer 36 .

根据图1的实施例,天线14包括参与天线激励的次级部分导电层或轨道58。次级部分58优选为金属层,优选地是与层36相同的金属。次级部分58在元件42之上延伸到腔46中。次级部分58形成围绕腔44的导电环。因此,次级部分58在腔46的壁之上延伸。次级部分58从堆叠24延伸壁48、52中的一个的高度,优选地壁52的整个高度。次级部分58优选地在基部50的至少一部分(即,腔46的底部,优选地在层54的平面中)之上延伸到腔46中。因此,次级部分58的横截面视图优选为L形。因此,次级部分优选地包括指向堆叠24的腿部(leg),以及指向层54的腿部,例如与层54共面。According to the embodiment of FIG. 1 , the antenna 14 comprises a secondary part conductive layer or track 58 which participates in the excitation of the antenna. The secondary part 58 is preferably a metal layer, preferably the same metal as layer 36 . The secondary part 58 extends over the element 42 into the cavity 46 . The secondary part 58 forms a conductive ring around the cavity 44 . Thus, the secondary part 58 extends over the wall of the cavity 46 . The secondary part 58 extends from the stack 24 the height of one of the walls 48 , 52 , preferably the entire height of the wall 52 . The secondary portion 58 preferably extends into the cavity 46 over at least a portion of the base 50 (ie, the bottom of the cavity 46 , preferably in the plane of the layer 54 ). The secondary part 58 is therefore preferably L-shaped in cross-sectional view. Thus, the secondary part preferably comprises a leg directed towards the stack 24 , and a leg directed towards the layer 54 , eg coplanar with the layer 54 .

次级部分58通过至少一个导电元件60(例如至少一个导电过孔或导电环)耦合到层36。至少一个导电元件60延伸穿过堆叠24的一个或多个绝缘层,以便到达层36。换句话说,至少一个导电元件60与层36接触并且延伸到堆叠24的上表面。次级部分58搁置成与元件60接触,该元件60与堆叠24的上表面齐平。Secondary portion 58 is coupled to layer 36 by at least one conductive element 60 , such as at least one conductive via or ring. At least one conductive element 60 extends through one or more insulating layers of stack 24 in order to reach layer 36 . In other words, at least one conductive element 60 is in contact with layer 36 and extends to the upper surface of stack 24 . The secondary part 58 rests in contact with an element 60 which is flush with the upper surface of the stack 24 .

腔44填充有材料56。该材料具有例如小于20,优选小于10,更优选小于3,例如大于1的介电常数。材料56例如是空气。Cavity 44 is filled with material 56 . The material has, for example, a dielectric constant of less than 20, preferably less than 10, more preferably less than 3, eg greater than 1 . Material 56 is, for example, air.

腔46填充有第二材料47,优选地不同于填充腔44的第一材料。第二材料的介电常数例如小于20,优选小于10,更优选小于3,例如大于1。材料47例如是空气。备选地,材料47可以是与材料56相同的材料。备选地,材料47可以是导电材料。Cavity 46 is filled with a second material 47 , preferably different from the first material filling cavity 44 . The dielectric constant of the second material is, for example, less than 20, preferably less than 10, more preferably less than 3, eg greater than 1. Material 47 is, for example, air. Alternatively, material 47 may be the same material as material 56 . Alternatively, material 47 may be a conductive material.

基底50优选地具有小于100μm的厚度,优选地小于50μm。优选地,基座50尽可能薄,同时避免元件42的变形。从基部50延伸到堆叠24的壁48提供稳定器并且确保基部50不变形。Substrate 50 preferably has a thickness of less than 100 μm, preferably less than 50 μm. Preferably, base 50 is as thin as possible while avoiding deformation of element 42 . The wall 48 extending from the base 50 to the stack 24 provides a stabilizer and ensures that the base 50 does not deform.

层54具有例如介于5μm到30μm之间的厚度。层58具有例如与层54相同的厚度。层58具有例如介于20μm到50μm之间的厚度。Layer 54 has a thickness, for example, between 5 μm and 30 μm. Layer 58 has, for example, the same thickness as layer 54 . Layer 58 has a thickness, for example, between 20 μm and 50 μm.

层36和层40例如分开介于250μm到400μm之间的距离,例如基本上等于350μm。层54与层36之间的距离例如取决于由天线14发射或接收的波长范围。例如,对于频率基本上等于60GHz的信号,层54与层36之间的距离基本上等于400μm。优选地,层54与层36之间的距离大于150μm,例如大于200μm。Layer 36 and layer 40 are for example separated by a distance between 250 μm and 400 μm, for example substantially equal to 350 μm. The distance between layer 54 and layer 36 depends, for example, on the wavelength range emitted or received by antenna 14 . For example, for a signal with a frequency substantially equal to 60 GHz, the distance between layer 54 and layer 36 is substantially equal to 400 μm. Preferably, the distance between layer 54 and layer 36 is greater than 150 μm, for example greater than 200 μm.

层54与层36之间的距离是天线封装件的重要特性。实际上,层54与层36之间的距离必须足够高以允许层54辐射透射信号。层54和层36由具有特别是介电常数的特性的材料进一步分隔开,从而允许有效的信号通道。The distance between layer 54 and layer 36 is an important characteristic of the antenna package. In practice, the distance between layer 54 and layer 36 must be high enough to allow layer 54 to radiate through the signal. Layer 54 and layer 36 are further separated by a material having properties, in particular a dielectric constant, allowing efficient signal passage.

可以选择形成填充堆叠上的腔44的材料层并在层上形成层54。然而,根据使用方式来精确地选择层的厚度可能是不可能的。A layer of material may be selected to form that fills cavity 44 on the stack and forms layer 54 thereon. However, it may not be possible to precisely select the thickness of the layer depending on the manner of use.

图2是电子设备61的另一实施例的横截面图。FIG. 2 is a cross-sectional view of another embodiment of an electronic device 61 .

装置61与图1的装置10的不同之处在于,面向腔46的基部50的厚度不同于面向腔44的基部50的厚度,优选地大于基部50面向腔44的厚度。换句话说,腔46的高度小于腔44的高度。基部50的上表面,即距离腔44和46最远的表面是平面的。Device 61 differs from device 10 of FIG. 1 in that base 50 facing cavity 46 has a different thickness than base 50 facing cavity 44 , preferably greater than the thickness of base 50 facing cavity 44 . In other words, the height of cavity 46 is less than the height of cavity 44 . The upper surface of base 50, the surface furthest from cavities 44 and 46, is planar.

层54和58位于它们各自的腔中,如结合图1所描述的。层58包括在壁52上方延伸的腿部和在基部50上方延伸并且因此不在与层54相同的平面中的腿部。Layers 54 and 58 are located in their respective cavities as described in connection with FIG. 1 . Layer 58 includes legs extending above wall 52 and legs extending above base 50 and thus not in the same plane as layer 54 .

根据另一个实施例,在基部50上方延伸的层58的腿部与层54共面,并且基部50的面向腔46的厚度不同于基部50的面向腔44的厚度,优选地大于基部50的面向腔44的厚度。According to another embodiment, the legs of the layer 58 extending above the base 50 are coplanar with the layer 54, and the thickness of the base 50 facing the cavity 46 is different from, preferably greater than, the thickness of the base 50 facing the cavity 44. The thickness of cavity 44.

图3是电子设备70的另一实施例的截面图。FIG. 3 is a cross-sectional view of another embodiment of an electronic device 70 .

设备70与图1和图2的实施例的不同之处在于,设备70不包括腔46。因此,元件42形成单个腔44。腔44包括层54和材料56,如关于图1所描述的。横向围绕腔44的壁48形成元件42的侧壁,并且因此形成上层18的侧壁的一部分。因此,元件42对应于包括与腔44相对应的单个腔的块。壁48因此与堆叠24的侧壁共面。Device 70 differs from the embodiment of FIGS. 1 and 2 in that device 70 does not include cavity 46 . Thus, element 42 forms a single cavity 44 . Cavity 44 includes layer 54 and material 56 as described with respect to FIG. 1 . A wall 48 laterally surrounding the cavity 44 forms the side walls of the element 42 and thus forms part of the side walls of the upper layer 18 . Element 42 thus corresponds to a block comprising a single cavity corresponding to cavity 44 . Wall 48 is thus coplanar with the side walls of stack 24 .

堆叠24优选地不包括导电元件60。天线14不包括次级部分58。Stack 24 preferably does not include conductive elements 60 . Antenna 14 does not include secondary part 58 .

图4为电子设备80的另一实施例的横截面图。FIG. 4 is a cross-sectional view of another embodiment of an electronic device 80 .

装置80与图1的实施例的不同之处在于,次级部分58不存在于腔46中。因此,腔46仅包括材料47。The device 80 differs from the embodiment of FIG. 1 in that the secondary part 58 is not present in the cavity 46 . Thus, cavity 46 only includes material 47 .

如在图3的实施例中,不存在导电元件60。As in the embodiment of FIG. 3 , the conductive element 60 is absent.

图5是电子设备90的另一实施例的横截面图。FIG. 5 is a cross-sectional view of another embodiment of an electronic device 90 .

装置90与图1的实施例的不同之处在于,层54位于基部50的上表面上,即,元件42的上表面上。层54位于腔44的对面。层54例如在水平面中具有小于或等于腔44的尺寸的尺寸。因此,腔44仅填充有材料56。因此,次级部分58位于与包括层54的平面不同的平面中。特别地,搁置在基部50上的次级部分58的腿部不与层54共面。Device 90 differs from the embodiment of FIG. 1 in that layer 54 is located on the upper surface of base 50 , ie on the upper surface of element 42 . Layer 54 is located opposite cavity 44 . The layer 54 has, for example, dimensions in the horizontal plane which are smaller than or equal to the dimensions of the cavity 44 . Thus, cavity 44 is only filled with material 56 . The secondary part 58 therefore lies in a different plane than the plane including the layer 54 . In particular, the legs of the secondary part 58 resting on the base 50 are not coplanar with the layer 54 .

图6示出了用于制造图1的实施例的一部分的示例方法。更具体地,图6包括四个截面图A、B、C和D,每个示出了用于制造图1的实施例的一部分的方法中的步骤。由视图A、B、C和D示出的步骤优选地是连续的。FIG. 6 illustrates an example method for fabricating a portion of the embodiment of FIG. 1 . More specifically, FIG. 6 includes four cross-sectional views A, B, C, and D, each illustrating a step in a method for manufacturing a portion of the embodiment of FIG. 1 . The steps shown by views A, B, C and D are preferably sequential.

图6的视图A示出了形成元件42或盖的步骤。优选地,通过将构成元件42的材料注射到具有元件42的期望形状的模具中来形成元件42。注射例如通过注射器或通过合适的元件来完成,例如作为用于制造元件42的机器的一部分。构成元件42的材料在注射期间优选为液体形式。然后,例如通过热处理,即通过增加其温度,使材料达到固相。然后去除模具。View A of FIG. 6 shows the steps of forming the element 42 or cover. Preferably, element 42 is formed by injecting the material making up element 42 into a mold having the desired shape of element 42 . Injection is done, for example, by means of a syringe or by a suitable element, for example as part of the machine used to manufacture element 42 . The material making up element 42 is preferably in liquid form during injection. The material is then brought to a solid phase, for example by heat treatment, ie by increasing its temperature. Then remove the mold.

构成元件42的材料是塑料。构成元件42的材料优选为与激光直接成型(LDS)方法兼容的材料,换句话说,掺杂有非导电金属无机化合物的热塑性材料。The material constituting the element 42 is plastic. The material constituting the element 42 is preferably a material compatible with the laser direct structuring (LDS) method, in other words, a thermoplastic material doped with a non-conductive metal-inorganic compound.

图6的视图B示出了层位置54和58的激光激活,以产生用于这些位置的金属化的基底。View B of FIG. 6 shows laser activation of layer locations 54 and 58 to produce a metallized substrate for these locations.

在图6的视图C所示的步骤期间,将元件42放置在化学镀槽组合物中。结果,在图6的视图B的步骤中激活的位置处形成层54和58。During the step shown in view C of FIG. 6, element 42 is placed in the electroless bath composition. As a result, layers 54 and 58 are formed at the locations activated in the step of view B of FIG. 6 .

备选地,在图6的步骤的视图B中激活的位置大于层54和58。因此,图6的视图C的步骤允许形成具有大于层54和58的尺寸的尺寸的金属层。然后蚀刻这些层以形成层54和58。Alternatively, the location activated in view B of the step of FIG. 6 is greater than layers 54 and 58 . Thus, the steps of view C of FIG. 6 allow the formation of metal layers having dimensions larger than those of layers 54 and 58 . These layers are then etched to form layers 54 and 58 .

在图6的视图D的步骤中,腔44和46分别填充有材料56和47。例如,材料以液体形式沉积在腔中并且例如通过热处理(annealing)步骤凝固。In the step of view D of FIG. 6 cavities 44 and 46 are filled with material 56 and 47 respectively. For example, the material is deposited in the cavity in liquid form and solidified, for example by an annealing step.

在随后的未图示的步骤中,元件42被附接到堆叠24。In a subsequent step, not shown, the element 42 is attached to the stack 24 .

图6示出了图1的实施例的制造。然而,通过修改图6的视图A中所示的模具的形状并且通过修改图6的视图B中的步骤的激光激活位置,所描述的方法适用于附图2至5的实施例。FIG. 6 illustrates the fabrication of the embodiment of FIG. 1 . However, by modifying the shape of the mold shown in view A of FIG. 6 and by modifying the laser activation position of the step in view B of FIG. 6 , the method described is applicable to the embodiments of FIGS. 2 to 5 .

对应于直接激光结构化方法的图6的步骤B和C可以由其他金属层沉积步骤替代,例如溅射步骤或喷涂步骤。然后,元件42的材料可以不同于结合图6的视图A论述的材料。然后,元件42可以由适合于形成元件42和用于沉积金属层的任何塑料材料制成。Steps B and C of FIG. 6 corresponding to the direct laser structuring method can be replaced by other metal layer deposition steps, such as sputtering steps or spraying steps. However, the material of element 42 may be different from that discussed in connection with view A of FIG. 6 . Element 42 may then be made of any plastic material suitable for forming element 42 and for depositing metal layers.

所描述的实施例的优点是可以更好地控制辐射导电层54(以其它方式称为“贴片”)与激励层36之间的距离。因此有利地可以减小该距离,以便减小封装件的尺寸,同时保持用于天线的操作的足够距离。An advantage of the described embodiment is that the distance between the radiating conductive layer 54 (otherwise referred to as a "patch") and the actuation layer 36 can be better controlled. This distance can thus advantageously be reduced in order to reduce the size of the package while maintaining a sufficient distance for the operation of the antenna.

所描述的实施例的另一优点是其允许独立于结构的类型而通过材料56分离层54和层36。实际上,该结构由塑料元件或盖42保持,并且材料56的强度不影响封装件的强度。Another advantage of the described embodiment is that it allows separation of layer 54 and layer 36 by material 56 independently of the type of structure. In fact, the structure is held by the plastic element or cover 42 and the strength of the material 56 does not affect the strength of the enclosure.

所描述的实施例的另一优点是可以选择彼此不同的、围绕层58的材料47和围绕层54的材料56。Another advantage of the described embodiment is that the material 47 of the surrounding layer 58 and the material 56 of the surrounding layer 54 can be selected differently from each other.

已经描述了各种实施例和变型。所属领域的技术人员将理解,可以组合这些实施例的某些特征,并且所属领域的技术人员将容易想到其它变型。Various embodiments and modifications have been described. Those skilled in the art will appreciate that certain features of these embodiments may be combined, and that other variations will readily occur to those skilled in the art.

最后,基于上文提供的功能描述,本文描述的实施例和变型的实际实施方式在本领域技术人员的能力范围内。Finally, based on the functional description provided above, the practical implementation of the embodiments and variants described herein is within the capabilities of a person skilled in the art.

Claims (29)

1.一种封装件,包括:1. A package comprising: 上层,包括:upper layer, including: 堆叠,包括绝缘层和导电元件;Stacks, including insulating layers and conductive elements; 塑料元件,具有搁置在所述堆叠上的第一侧、与所述第一侧相对的第二侧,并且包括从所述第一侧延伸到所述塑料元件中的第一腔,所述第一腔具有第一高度,所述第一高度小于所述塑料元件在所述第一侧与所述第二侧之间的厚度;以及A plastic element having a first side resting on the stack, a second side opposite the first side, and including a first cavity extending from the first side into the plastic element, the first a cavity has a first height less than the thickness of the plastic element between the first side and the second side; and 天线,包括所述堆叠中的第一导电轨道和所述塑料元件的壁上的第二导电轨道。An antenna comprising a first conductive track in the stack and a second conductive track on the wall of the plastic element. 2.根据权利要求1所述的封装件,其中所述第二导电轨道位于所述第一腔的底部处。2. The package of claim 1, wherein the second conductive track is located at the bottom of the first cavity. 3.根据权利要求2所述的封装件,其中所述第一腔填充有具有小于20的介电常数的第一材料。3. The package of claim 2, wherein the first cavity is filled with a first material having a dielectric constant less than 20. 4.根据权利要求1所述的封装件,其中所述第二导电轨道在所述第一腔之上,位于所述塑料元件的所述第二侧上。4. The package of claim 1, wherein the second conductive track is above the first cavity on the second side of the plastic element. 5.根据权利要求1所述的封装件,其中所述塑料元件还包括从所述第一侧延伸到所述塑料元件中的第二腔,所述第二腔具有第二高度,所述第二高度小于所述塑料元件在所述第一侧与所述第二侧之间的所述厚度,所述第二腔围绕所述第一腔。5. The package of claim 1, wherein the plastic component further comprises a second cavity extending into the plastic component from the first side, the second cavity has a second height, the first cavity A second height is less than the thickness of the plastic element between the first side and the second side, and the second cavity surrounds the first cavity. 6.根据权利要求5所述的封装件,其中所述第二腔通过第一壁与所述第一腔分离,所述第一壁延伸所述第一腔的所述第一高度并且搁置在所述堆叠上。6. The package of claim 5, wherein the second cavity is separated from the first cavity by a first wall extending the first height of the first cavity and resting on on the stack. 7.根据权利要求5所述的封装件,其中所述天线还包括位于所述第二腔内的第三导电轨道。7. The package of claim 5, wherein the antenna further comprises a third conductive track located within the second cavity. 8.根据权利要求7所述的封装件,其中所述第三导电轨道包括在所述第二腔的侧壁上延伸的第一部分及在所述第二腔的底部上延伸的第二部分。8. The package of claim 7, wherein the third conductive track comprises a first portion extending on a sidewall of the second cavity and a second portion extending on a bottom of the second cavity. 9.根据权利要求8所述的封装件,其中所述第二导电轨道位于所述第一腔的底部处,并且其中所述第三导电轨道的所述第二部分与所述第二导电轨道共面。9. The package of claim 8, wherein the second conductive track is located at the bottom of the first cavity, and wherein the second portion of the third conductive track is in contact with the second conductive track Coplanar. 10.根据权利要求8所述的封装件,其中所述第二导电轨道位于所述第一腔的底部处,并且其中所述第三导电轨道的所述第二部分在与所述第二导电轨道的平面不同的平面中延伸。10. The package of claim 8, wherein the second conductive track is located at the bottom of the first cavity, and wherein the second portion of the third conductive track is in contact with the second conductive track. The planes of the tracks extend in different planes. 11.根据权利要求7所述的封装件,其中所述第三导电轨道被电耦合到所述第一导电轨道。11. The package of claim 7, wherein the third conductive track is electrically coupled to the first conductive track. 12.根据权利要求5所述的封装件,其中所述第一腔被填充有第一电介质材料,并且其中所述第二腔被填充有不同于所述第一电介质材料的第二电介质材料。12. The package of claim 5, wherein the first cavity is filled with a first dielectric material, and wherein the second cavity is filled with a second dielectric material different from the first dielectric material. 13.根据权利要求1所述的封装件,还包括:13. The package of claim 1, further comprising: 下层;Lower layer; 其中所述上层通过电连接元件被附接到所述下层;wherein said upper layer is attached to said lower layer by electrical connection elements; 其中第三腔被限定于所述上层与所述下层之间并且由所述电连接元件围绕;以及wherein a third cavity is defined between said upper layer and said lower layer and is surrounded by said electrical connection element; and 集成电路芯片,位于所述第三腔内并且电连接到所述天线。an integrated circuit chip located within the third cavity and electrically connected to the antenna. 14.根据权利要求13所述的封装件,还包括在所述第一导电轨道与所述第三腔之间延伸到所述堆叠中的第四导电轨道。14. The package of claim 13, further comprising a fourth conductive track extending into the stack between the first conductive track and the third cavity. 15.根据权利要求1所述的封装件,其中所述塑料元件由掺杂有非导电无机金属化合物的热塑性材料制成。15. The package of claim 1, wherein the plastic element is made of a thermoplastic material doped with a non-conductive inorganic metal compound. 16.一种用于制造封装件的方法,包括:16. A method for manufacturing a package comprising: 通过以下操作形成上层;The upper layer is formed by the following operations; 形成堆叠,所述堆叠包括绝缘层和导电元件并且包括形成天线的一部分的第一导电轨道;forming a stack comprising an insulating layer and a conductive element and comprising a first conductive track forming part of the antenna; 形成塑料元件,所述塑料元件具有第一侧和与所述第一侧相对的第二侧,其中形成所述塑料元件包括形成从所述第一侧延伸到所述塑料元件中的第一腔,所述第一腔具有第一高度,所述第一高度小于所述塑料元件在所述第一侧与所述第二侧之间的厚度;forming a plastic element having a first side and a second side opposite the first side, wherein forming the plastic element includes forming a first cavity extending from the first side into the plastic element , the first cavity has a first height, the first height is less than the thickness of the plastic element between the first side and the second side; 将所述塑料元件安装到所述堆叠,其中所述第一侧搁置在所述堆叠上并且所述第一腔由所述堆叠封闭;以及mounting the plastic element to the stack, wherein the first side rests on the stack and the first cavity is closed by the stack; and 形成搁置在所述塑料元件的壁上的第二导电轨道。A second conductive track resting on the wall of the plastic element is formed. 17.根据权利要求16所述的方法,还包括用具有小于20的介电常数的第一材料填充所述第一腔。17. The method of claim 16, further comprising filling the first cavity with a first material having a dielectric constant less than 20. 18.根据权利要求16所述的方法,其中形成所述塑料元件还包括形成从所述第一侧延伸到所述塑料元件中的第二腔,所述第二腔具有第二高度,所述第二高度小于所述塑料元件在所述第一侧与所述第二侧之间的所述厚度,所述第二腔围绕所述第一腔。18. The method of claim 16, wherein forming the plastic element further comprises forming a second cavity extending from the first side into the plastic element, the second cavity having a second height, the The second height is less than the thickness of the plastic element between the first side and the second side, the second cavity surrounding the first cavity. 19.根据权利要求18所述的方法,还包括形成沿着所述第二腔的至少一个壁延伸的第三导电轨道。19. The method of claim 18, further comprising forming a third conductive track extending along at least one wall of the second cavity. 20.根据权利要求19所述的方法,其中所述第三导电轨道包括在所述第二腔的侧壁上延伸的第一部分及在所述第二腔的底部上延伸的第二部分。20. The method of claim 19, wherein the third conductive track includes a first portion extending on a sidewall of the second cavity and a second portion extending on a bottom of the second cavity. 21.根据权利要求20所述的方法,其中所述第二导电轨道在所述第一腔的底部上延伸,并且所述第三导电轨道的所述第二部分与所述第二导电轨道共面。21. The method of claim 20, wherein the second conductive track extends over the bottom of the first cavity, and the second portion of the third conductive track is in common with the second conductive track. noodle. 22.根据权利要求20所述的方法,其中所述第二导电轨道在所述第一腔的底部上延伸,并且所述第三导电轨道的所述第二部分在与所述第二导电轨道的平面不同的平面中延伸。22. The method of claim 20, wherein the second conductive track extends over the bottom of the first cavity, and the second portion of the third conductive track is in contact with the second conductive track extend in different planes of the plane. 23.根据权利要求19所述的方法,还包括将所述第三导电轨道电耦合到所述第一导电轨道。23. The method of claim 19, further comprising electrically coupling the third conductive track to the first conductive track. 24.根据权利要求18所述的方法,还包括用第一电介质材料填充所述第一腔并且用不同于所述第一电介质材料的第二电介质材料填充所述第二腔。24. The method of claim 18, further comprising filling the first cavity with a first dielectric material and filling the second cavity with a second dielectric material different from the first dielectric material. 25.根据权利要求24所述的方法,其中形成所述塑料元件包括模制,并且其中分别用所述第一介电材料和所述第二介电材料填充所述第一腔和所述第二腔发生在模制之后。25. The method of claim 24, wherein forming the plastic element comprises molding, and wherein filling the first cavity and the second cavity with the first dielectric material and the second dielectric material, respectively Two cavities occur after molding. 26.根据权利要求16所述的方法,还包括:26. The method of claim 16, further comprising: 形成下层;以及form the lower layer; and 将所述上层附接到所述下层,所述附接在所述上层与所述下层之间限定第三腔。The upper layer is attached to the lower layer, the attachment defining a third cavity between the upper layer and the lower layer. 27.根据权利要求26所述的方法,还包括形成第四导电轨道,所述第四导电轨道在所述第一导电轨道与所述第三腔之间延伸到所述堆叠中。27. The method of claim 26, further comprising forming a fourth conductive track extending into the stack between the first conductive track and the third cavity. 28.根据权利要求16所述的方法,其中所述塑料元件由掺杂有非导电无机金属化合物的热塑性材料制成。28. The method of claim 16, wherein the plastic element is made of a thermoplastic material doped with a non-conductive inorganic metal compound. 29.根据权利要求28所述的方法,其中形成所述塑料元件包括执行激光直接成型操作。29. The method of claim 28, wherein forming the plastic element comprises performing a laser direct structuring operation.
CN202210541784.3A 2021-05-18 2022-05-17 Antenna package Pending CN115377651A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR2105186A FR3123160B1 (en) 2021-05-18 2021-05-18 Antenna box
FR2105186 2021-05-18
US17/742,039 2022-05-11
US17/742,039 US12009572B2 (en) 2021-05-18 2022-05-11 Antenna package

Publications (1)

Publication Number Publication Date
CN115377651A true CN115377651A (en) 2022-11-22

Family

ID=83740489

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202221223744.6U Active CN217691621U (en) 2021-05-18 2022-05-17 Package member
CN202210541784.3A Pending CN115377651A (en) 2021-05-18 2022-05-17 Antenna package

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202221223744.6U Active CN217691621U (en) 2021-05-18 2022-05-17 Package member

Country Status (1)

Country Link
CN (2) CN217691621U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN217691621U (en) * 2021-05-18 2022-10-28 意法半导体(格勒诺布尔2)公司 Package member

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487059A (en) * 2010-12-02 2012-06-06 三星电子株式会社 Stacked package structure
CN108879114A (en) * 2017-05-16 2018-11-23 华为技术有限公司 Integrated antenna packages structure and terminal
US20190036202A1 (en) * 2017-07-28 2019-01-31 The Antenna Company International N.V. Component for a dual band antenna, a dual band antenna comprising said component, and a dual band antenna system
CN109671680A (en) * 2017-10-16 2019-04-23 台湾积体电路制造股份有限公司 The chip packaging piece of tube core structure and forming method thereof with different height
US20200098524A1 (en) * 2018-09-21 2020-03-26 Stmicroelectronics (Tours) Sas Capacitor
CN217691621U (en) * 2021-05-18 2022-10-28 意法半导体(格勒诺布尔2)公司 Package member

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487059A (en) * 2010-12-02 2012-06-06 三星电子株式会社 Stacked package structure
CN108879114A (en) * 2017-05-16 2018-11-23 华为技术有限公司 Integrated antenna packages structure and terminal
US20190036202A1 (en) * 2017-07-28 2019-01-31 The Antenna Company International N.V. Component for a dual band antenna, a dual band antenna comprising said component, and a dual band antenna system
CN109671680A (en) * 2017-10-16 2019-04-23 台湾积体电路制造股份有限公司 The chip packaging piece of tube core structure and forming method thereof with different height
US20200098524A1 (en) * 2018-09-21 2020-03-26 Stmicroelectronics (Tours) Sas Capacitor
CN217691621U (en) * 2021-05-18 2022-10-28 意法半导体(格勒诺布尔2)公司 Package member

Also Published As

Publication number Publication date
CN217691621U (en) 2022-10-28

Similar Documents

Publication Publication Date Title
US7504721B2 (en) Apparatus and methods for packaging dielectric resonator antennas with integrated circuit chips
US7675465B2 (en) Surface mountable integrated circuit packaging scheme
CN1627562B (en) Apparatus and method for constructing an antenna using vias in a substrate as radiating elements
US20150207233A1 (en) Dielectric resonator antenna
US20160043455A1 (en) Microwave Chip Package Device
JP6058144B2 (en) High frequency module
US20120104574A1 (en) Integrated antennas in wafer level package
US20060276157A1 (en) Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications
US11289433B2 (en) Semiconductor device packages and methods of manufacturing the same
CN102881986A (en) Semiconductor package
US9245859B2 (en) Wireless module
JP5919398B2 (en) Semiconductor module and method for manufacturing the semiconductor module
CN107265393B (en) Semiconductor Devices Containing MEMS Dies
TWI722913B (en) Semiconductor package
JP6622649B2 (en) Non-contact communication module
CN114843722A (en) Radio frequency device and method for manufacturing radio frequency device
CN115377651A (en) Antenna package
EP3836207B1 (en) Semiconductor structure and method for manufacturing a semiconductor structure
CN113258256B (en) Antenna module
US10021790B2 (en) Module with internal wire fence shielding
KR20160026920A (en) Electronic device having a lead with selectively modified electrical properties
US11121467B2 (en) Semiconductor package with compact antenna formed using three-dimensional additive manufacturing process
US12009572B2 (en) Antenna package
CN110021563B (en) Electronic package
EP4213297B1 (en) Antenna layer structures separated by fluid-filled cavity, an antenna inlay, and a component carrier

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination