CN115473502A - Internal matching circuit of ceramic tube shell packaged power amplifier - Google Patents
Internal matching circuit of ceramic tube shell packaged power amplifier Download PDFInfo
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- CN115473502A CN115473502A CN202211012736.1A CN202211012736A CN115473502A CN 115473502 A CN115473502 A CN 115473502A CN 202211012736 A CN202211012736 A CN 202211012736A CN 115473502 A CN115473502 A CN 115473502A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 239000003985 ceramic capacitor Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The application provides an internal matching circuit of a ceramic tube package power amplifier, which comprises a harmonic impedance, an envelope impedance control network and the internal matching power amplifier, wherein the harmonic impedance, the envelope impedance control network and the internal matching power amplifier are packaged in the ceramic tube package together; one end of a first inductor L1 of the harmonic impedance and envelope impedance control network is connected to an output inner matching capacitor or a tube shell of the inner matching power amplifier, the other end of the first inductor L1 is connected with one end of a first capacitor C1, the other end of the first capacitor C1 is grounded, one end of a second inductor L2 is connected with the first capacitor C1, the other end of the second inductor L2 is connected with a first resistor R1, the other end of the first resistor R1 is connected with one end of a third inductor L3, the other end of the third inductor L3 is connected with a second capacitor C2, the other end of the second capacitor C2 is grounded, and the harmonic impedance and envelope impedance control network is added into the inner matching power amplifier packaged by the ceramic tube shell, so that the power amplifier VBW is greatly improved, the memory effect is reduced, and the linearization performance of the device is improved.
Description
Technical Field
The application relates to the technical field of integrated circuits, in particular to an internal matching circuit of a ceramic tube shell packaging power amplifier.
Background
In wireless communication devices, a radio frequency power amplifier as a core component is particularly important. In practical application of power amplification, the output efficiency and memory effect of the power amplification are two important indexes.
The output efficiency of the power amplifier depends on the performance of the power die itself and is also related to the matching circuit. Usually, the internal matching circuit of the ceramic package tube-shell high-power amplifier only performs fundamental impedance pre-matching, and the harmonic impedance matching circuit is usually placed in an external matching circuit, as shown in fig. 1, the external matching circuit of the power amplifier usually includes functions of fundamental impedance matching, a bias circuit and the like, and in addition to parasitic effects of the tube shell and the like, the harmonic impedance matching usually cannot reach an optimal state, and particularly, when the power amplifier is produced on a large scale, due to the discrete effect, the effect of improving the output efficiency by performing the harmonic impedance matching in this way is limited, and is usually only 2-3%.
The memory effect of the power amplifier is closely related to the working bandwidth, and the Video Bandwidth (VBW) representing the working bandwidth of the rf power amplifier and the memory effect affecting the linearity of the power amplifier are two important factors for measuring the performance of the rf power amplifier. From a frequency domain perspective, the memory effect of a power amplifier is defined as the phenomenon in which the amplitude and phase characteristics of the power amplifier change as the envelope frequency of the input signal changes. The memory effect of the power amplifier is generally divided into two types, one is the electric memory effect, and is related to the device and circuit design of the power amplifier; the other is the thermal memory effect, which is related to the temperature cycle of the transistor channel. Because the thermal memory effect of the power amplifier is optimized by a device manufacturer before the device leaves a factory, the optimized memory effect in the actual design of the power amplifier circuit generally refers to the electrical memory effect of the power amplifier.
The main reason for the generation of the electrical memory effect is that within the operating bandwidth of the amplifier, the source impedance and the load impedance of the amplifier vary with the frequency of the input broadband modulation signal, and exhibit frequency-dependent characteristics, which ultimately cause the amplitude and phase of the output intermodulation component of the amplifier to vary with the frequency of the input signal, specifically to the asymmetry of the upper and lower sidebands of the output spectral component of the amplifier. In order to reduce the memory effect, most of the articles add an auxiliary circuit on the bias circuit to short-circuit the envelope signal and the second harmonic, as shown in fig. 1, but due to the discrete action of the transmission line, the method is difficult to realize broadband short-circuit, and it is also difficult to improve the VBW of the power amplifier with a large amplitude by reducing the equivalent inductance of the microstrip line at the offset, and the bias circuit usually has the function of the feed network, and is difficult to realize the function of reducing the envelope impedance.
Disclosure of Invention
The exemplary embodiments of the present application provide an internal matching circuit of a ceramic package packaged power amplifier, so as to at least achieve the technical effects of reducing the memory effect of a power amplifier and improving the VBW and output efficiency of the power amplifier.
The application provides an internal matching circuit of a ceramic tube package power amplifier, which comprises a harmonic impedance and an envelope impedance control network, wherein the harmonic impedance and the envelope impedance control network and the internal matching power amplifier are packaged in a ceramic tube package together; the harmonic impedance and envelope impedance control network comprises a first inductor L1, a first capacitor C1, a second inductor L2, a first resistor R1, a third inductor L3 and a second capacitor C2; one end of the first inductor L1 is connected to an output inner matching capacitor or a tube shell of the inner matching power amplifier, the other end of the first inductor L1 is connected to one end of the first capacitor C1, the other end of the first capacitor C1 is grounded, one end of the second inductor L2 is connected to the first capacitor C1, the other end of the second inductor L2 is connected to the first resistor R1, the other end of the first resistor R1 is connected to one end of the third inductor L3, the other end of the third inductor L3 is connected to the second capacitor C2, and the other end of the second capacitor C2 is grounded.
In an embodiment, the first inductor L1, the second inductor L2 and the third inductor L3 are connected by gold wire bonding wires.
In an embodiment, the first resistor R1, the second capacitor C2 and the third capacitor C3 are respectively a thin film resistor and a ceramic capacitor, and are interconnected through a gold bonding wire.
In an embodiment, an equivalent inductance L of the first inductance L1, the second inductance L2 and the third inductance L3 is in parallel resonance with a parasitic capacitance Cg of the internal matching power amplifier, a resonance frequency is fr, the equivalent inductance L = L1+ L2+ L3, a video bandwidth of the power amplifier is determined by the resonance frequency fr, and the video bandwidth is controlled by adjusting gold wire parameters of the second inductance L2 and the third inductance L3.
In an embodiment, the harmonic impedance, envelope impedance control network comprises one or more.
The application has the following beneficial effects:
1. according to the invention, through the first inductor L1 and the first capacitor, the optimization of the second harmonic resistance of the power amplifier is realized, and the purpose of improving the power amplifier efficiency is achieved. Compared with the external matching capacitor, the circuit realizes the second harmonic impedance matching, the efficiency is obviously improved by about 5-6%, and the automatic test is carried out before the power amplifier device leaves the factory, so that the consistency of the device performance is ensured, and the large-scale production and use of communication equipment manufacturers are facilitated.
2. The invention achieves the purpose of reducing envelope impedance through a first resistor R of an envelope network. Compared with a method for improving the VBW bandwidth through an external matching bias circuit, when envelope frequency resonates in a traditional method, impedance is usually in a high-resistance area. The invention not only improves the resonance frequency of the envelope, but also reduces the envelope impedance, so that the envelope impedance is flatter, and the effect of reducing the memory effect is more obvious.
3. The equivalent inductance of the control network and the parasitic capacitance of the power tube core generate resonance, the optimization and reduction of the inductance are realized by controlling the second inductance L2 and the third inductance L3, the resonance frequency of the envelope is improved, and the video bandwidth of the power amplifier is widened. Compared with the reduction of the inductance and the parasitic inductance on the power supply arm, the video bandwidth of the power amplifier is about 100MHz-200MHz; the inductance is reduced by adjusting the parameters of the gold bonding wire, so that the VBW can be increased to about 500 MHz.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic diagram of a prior art power amplifier circuit for reducing memory effect and optimizing harmonic impedance;
FIG. 2 is a block diagram of an internal matching circuit of the ceramic package rate amplifier of the present application;
FIG. 3 shows simulation results of the optimized envelope impedance of the present application;
FIG. 4 is a schematic diagram of an embodiment of a harmonic impedance and envelope impedance control network according to the present application;
FIG. 5 is a schematic structural diagram of one embodiment of a harmonic impedance and envelope impedance control network according to the present application;
fig. 6 is a schematic structural diagram of one embodiment of a harmonic impedance and envelope impedance control network according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings in the preferred embodiments of the present application, and it is obvious that the described embodiments are some, not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
According to the requirement of a 5G communication system on a linearization technology and aiming at the defects in the prior art, the internal matching circuit is added in the internal matching power amplifier packaged by the ceramic tube shell, and the internal matching circuit has envelope impedance control and harmonic impedance control functions, can widen the video bandwidth of the power amplifier, flexibly control the envelope impedance and control the harmonic impedance, so that the envelope impedance is reduced, the harmonic impedance is optimized, the memory effect of a power amplifier is reduced, and the output efficiency of the power amplifier is improved under the condition that the fundamental wave working frequency band of the power amplifier is not influenced.
As shown in fig. 2, the internal matching circuit of the ceramic package-in-package power amplifier includes a harmonic impedance and an envelope impedance control network, and the harmonic impedance and the envelope impedance control network are packaged in the ceramic package together with the internal matching power amplifier, so as to improve the output efficiency of the power amplifier and improve the linearity performance of the internal matching power amplifier.
The harmonic impedance and envelope impedance control network comprises a first inductor L1, a first capacitor C1, a second inductor L2, a first resistor R1, a third inductor L3 and a second capacitor C2; one end of the first inductor L1 is connected to an output inner matching capacitor or a tube shell of the inner matching power amplifier, the other end of the first inductor L1 is connected to one end of the first capacitor C1, the other end of the first capacitor C1 is grounded, one end of the second inductor L2 is connected to the first capacitor C1, the other end of the second inductor L2 is connected to the first resistor R1, the other end of the first resistor R1 is connected to one end of the third inductor L3, the other end of the third inductor L3 is connected to the second capacitor C2, and the other end of the second capacitor C2 is grounded. The first inductor L1, the second inductor L2 and the third inductor L3 are connected through gold wire bonding leads, namely variables such as the arc height, the span and the gold wire number of the bonding gold wire are adjusted to control the inductance value.
The first resistor R1, the second capacitor C2 and the third capacitor C3 respectively adopt a thin film resistor and a ceramic capacitor and are interconnected through a bonding gold wire, the equivalent inductance L of the first inductor L1, the second inductor L2 and the third inductor L3 and the parasitic capacitance Cg of the internal matching power amplifier are in parallel resonance, the resonance frequency is fr, the equivalent inductance L = L1+ L2+ L3, and the video bandwidth is controlled by adjusting gold wire parameters of the second inductor L2 and the third inductor L3. The higher the resonant frequency, the wider the video bandwidth of the power amplifier. The video bandwidth of a power amplifier is generally determined by a parallel resonance frequency fr, and the higher the resonance frequency, the wider the video bandwidth. The correlation formula is as follows:
since the parasitic capacitance Cg of the die itself is a fixed value, the video bandwidth of the power amplifier can be controlled by adjusting the gold wire parameters of the second inductor L2 and the third inductor L3.
It should be noted that, at present, the conventional power amplifier is based on an external matching circuit to improve a bias circuit to reduce the memory effect and the second harmonic matching, for example, the drain adopts a double-bias network form, a shorter and wider drain bias network, and a multi-stage bypass decoupling, and these methods are mainly used to reduce the equivalent inductance of the drain bias network, improve the resonant frequency, and widen the video bandwidth. However, these methods have limited VBW widening, and a shorter and wider bias network may cause low-frequency performance deterioration, and the envelope impedance value is usually in a high-impedance region, which is not favorable for reducing the memory effect of the broadband signal.
The ceramic can as shown in fig. 2 encloses a GaN HEMT die, an input-output matching circuit, and a harmonic impedance and envelope impedance control network. Cg is the die output capacitance, determined by the gate width of the die. The output matching circuit adopts a T-shaped LCL low-pass filter network to realize impedance conversion, wherein L is realized by a gold wire bonding lead. The bonding lead inductance meets circuit matching and simultaneously realizes the electrical interconnection of the device and the microstrip circuit. And C is a ceramic capacitor, and the circuit has better impedance transformation ratio by adjusting a gold wire bonding lead and the ceramic capacitor.
The first inductor L1 and the first capacitor C1 are used for optimizing harmonic impedance and improving power amplifier efficiency. The capacitance value of the first capacitor is selected to depend on the frequency of a second harmonic, for the power amplifier in a frequency band of 700MHz-4000MHz, the capacitance range of the capacitance value of the first capacitor is usually about 0.5pf-3pf, and the inductance value of the first inductor L1 is changed by adjusting a gold wire, so that the harmonic impedance of the power amplifier works in a higher efficiency area. The efficiency improvement realized at present is nearly 5 percent, which is superior to the traditional method.
The equivalent inductance of the first inductance L1, the second inductance L2 and the third inductance L3 will present a high impedance state to the fundamental wave, i.e. will not affect the performance of the fundamental wave, i.e. it is ensured that the power amplifier is not affected in the fundamental wave operating frequency band. Since the first inductor L1 is mainly used for adjusting the harmonic impedance, it is usually achieved by adjustment of the second and third inductors L3 that the fundamental performance is not affected. The filter capacitors and resistors act to reduce the envelope impedance while providing good radio frequency to ground performance.
The third order intermodulation component controlled by the envelope is filtered out by the additional circuit. The filter capacitor has the function of introducing the resonance circuit to control the baseband impedance, and the baseband impedance is reduced, so that the third-order intermodulation distortion caused by the baseband impedance is as small as possible. The baseband impedance, also referred to as envelope impedance, refers to the impedance to which the amplifier responds within the baseband frequency band, which includes the band of modulated signals (envelope) and the difference frequency of each carrier in the case of multiple carriers. The first resistor R1 is introduced to avoid the pure LC network resonance in the envelope band, which causes a very large impedance value in the envelope band of the signal.
As shown in fig. 3, a curve S (2,2) is envelope impedance realized when the VBW bandwidth is increased by the conventional method, and at a resonance point, the envelope impedance is in a high-impedance region; the curve S (4,4) is the envelope impedance realized when the VBW bandwidth is increased by simultaneously introducing the first resistor R1, and at the resonance point, the envelope impedance is in a low-impedance region, and the envelope impedance in the whole band (DC-500 MHz) is flatter.
In an embodiment, the harmonic impedance, envelope impedance control network comprises one or more.
As shown in fig. 4, in this embodiment, for the power amplifier tube of the Doherty technology for high-efficiency and small-volume application, two independent power amplifier tubes (used as Carrier amplifier and Peak amplifier of the Doherty amplifier, respectively) are integrated in one package. According to the invention, the harmonic impedance and the envelope impedance control network are respectively added to two independent power amplifiers, so that the power amplifier efficiency is improved, the memory effect of the power amplifier is reduced, and the linearization performance of the device is improved.
As shown in fig. 5, the envelope impedance control network may also be directly connected to the package through a gold wire, so as to reduce the memory effect of the power amplifier.
In the present embodiment, the memory effect reduction circuit of the present invention can be applied to the internal matching power amplifier of different types of ceramic package, as shown in fig. 6.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include 1 or more of that feature. In the description of the present application, "plurality" means at least 2, e.g., 2, 3, etc., unless explicitly defined otherwise.
While preferred embodiments of the present application have been described, additional variations and modifications in accordance with these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the application.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (6)
1. An internal matching circuit of a ceramic tube-shell packaged power amplifier is applied to the internal matching power amplifier packaged by the ceramic tube shell, and is characterized by comprising a harmonic impedance and envelope impedance control network, wherein the harmonic impedance and envelope impedance control network and the internal matching power amplifier are packaged in the ceramic tube shell together; the harmonic impedance and envelope impedance control network comprises a first inductor L1, a first capacitor C1, a second inductor L2, a first resistor R1, a third inductor L3 and a second capacitor C2; one end of the first inductor L1 is connected to an output inner matching capacitor or a tube shell of the inner matching power amplifier, the other end of the first inductor L1 is connected to one end of the first capacitor C1, the other end of the first capacitor C1 is grounded, one end of the second inductor L2 is connected to the first capacitor C1, the other end of the second inductor L2 is connected to the first resistor R1, the other end of the first resistor R1 is connected to one end of the third inductor L3, the other end of the third inductor L3 is connected to the second capacitor C2, and the other end of the second capacitor C2 is grounded.
2. The internal matching circuit of a ceramic package power amplifier according to claim 1, wherein the first inductor L1, the second inductor L2 and the third inductor L3 are connected by gold wire bonding wires.
3. The internal matching circuit of a ceramic package power amplifier as recited in claim 2, wherein said first resistor R1, said second capacitor C2 and said third capacitor C3 are respectively a thin film resistor and a ceramic capacitor, and are interconnected by a gold bonding wire.
4. The internal matching circuit of a ceramic package power amplifier according to claim 3, wherein an equivalent inductance L of the first inductance L1, the second inductance L2 and the third inductance L3 is in parallel resonance with a parasitic capacitance Cg of the internal matching power amplifier, a resonance frequency is fr, the equivalent inductance L = L1+ L2+ L3, a video bandwidth of the power amplifier is determined by the resonance frequency fr, and the video bandwidth is controlled by adjusting gold wire parameters of the second inductance L2 and the third inductance L3.
5. The ceramic package packaged power amplifier internal matching circuit of claim 4, wherein the harmonic impedance, envelope impedance control network comprises one or more.
6. The ceramic package power amplifier internal matching circuit of claim 5, wherein the harmonic impedance, envelope impedance control network is connected directly to the package by a gold wire.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211012736.1A CN115473502A (en) | 2022-08-23 | 2022-08-23 | Internal matching circuit of ceramic tube shell packaged power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211012736.1A CN115473502A (en) | 2022-08-23 | 2022-08-23 | Internal matching circuit of ceramic tube shell packaged power amplifier |
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| CN202211012736.1A Pending CN115473502A (en) | 2022-08-23 | 2022-08-23 | Internal matching circuit of ceramic tube shell packaged power amplifier |
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