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CN115543067A - Tactile feedback device - Google Patents

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Publication number
CN115543067A
CN115543067A CN202110735534.9A CN202110735534A CN115543067A CN 115543067 A CN115543067 A CN 115543067A CN 202110735534 A CN202110735534 A CN 202110735534A CN 115543067 A CN115543067 A CN 115543067A
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dielectric material
material layer
high dielectric
layer
tactile feedback
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张志雄
王维谦
周政旭
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Innolux Corp
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Innolux Display Corp
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/016Input arrangements with force or tactile feedback as computer generated output to the user
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields

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Abstract

本公开提供一种触觉回馈装置,包括:一基板;多个电极,设置于该基板上;至少一高介电材料层,设置于该多个电极上;以及一抗反射层,设置于该至少一高介电材料层上。

Figure 202110735534

The present disclosure provides a tactile feedback device, comprising: a substrate; a plurality of electrodes disposed on the substrate; at least one high dielectric material layer disposed on the plurality of electrodes; and an anti-reflection layer disposed on the at least one electrode. on a layer of high dielectric material.

Figure 202110735534

Description

触觉回馈装置Haptic feedback device

技术领域technical field

本公开有关于一种触觉回馈装置,特别是有关于一种配置有高介电材料层的触觉回馈装置。The present disclosure relates to a tactile feedback device, in particular to a tactile feedback device configured with a high dielectric material layer.

背景技术Background technique

现有的电场式触觉回馈(haptic)装置是在电极上覆盖抗反射层,然而,此结构在进行静电放电(ESD)测试或是在高电压操作下,抗反射层会因无法有效抵抗高电压而被击穿,造成抗反射层与电极受损。The existing electric field type haptic feedback (haptic) device covers the electrode with an anti-reflection layer. However, when this structure is subjected to electrostatic discharge (ESD) tests or under high-voltage operation, the anti-reflection layer will not be able to effectively withstand high voltage. However, it is broken down, causing damage to the anti-reflective layer and the electrode.

目前防止高电压击伤的方式,包括增加抗反射层厚度、增加遮蔽层、或降低电荷累积。然而,若单纯增加抗反射层厚度极有可能造成触觉回馈功能失效。而设置遮蔽层或是降低电荷累积的方式均无法达到目前测试规范,且若遮蔽层阻值过低还会造成触觉回馈功能失效。The current ways to prevent high voltage damage include increasing the thickness of the anti-reflection layer, increasing the shielding layer, or reducing charge accumulation. However, simply increasing the thickness of the anti-reflection layer may cause the failure of the tactile feedback function. However, the method of setting a shielding layer or reducing charge accumulation cannot meet the current test specifications, and if the resistance of the shielding layer is too low, the tactile feedback function will fail.

发明内容Contents of the invention

根据本公开的一实施例,提供一种触觉回馈装置,包括:一基板;多个电极,设置于该基板上;至少一高介电材料层,设置于这些电极上;以及一抗反射层,设置于该至少一高介电材料层上。According to an embodiment of the present disclosure, a tactile feedback device is provided, comprising: a substrate; a plurality of electrodes disposed on the substrate; at least one high dielectric material layer disposed on the electrodes; and an anti-reflection layer, disposed on the at least one high dielectric material layer.

附图说明Description of drawings

以下将配合所附附图详述本公开实施例。应注意的是,各种特征部件并未按照比例绘制且仅用以说明例示。事实上,元件的尺寸可能经放大或缩小,以清楚地表现出本公开实施例的技术特征。Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the various features are not drawn to scale and are used for illustrative purposes only. In fact, the dimensions of elements may be enlarged or reduced to clearly represent the technical features of the embodiments of the present disclosure.

图1根据本公开的一实施例,一种触觉回馈装置的剖面示意图;FIG. 1 is a schematic cross-sectional view of a tactile feedback device according to an embodiment of the present disclosure;

图2根据本公开的一实施例,一种触觉回馈装置的剖面示意图;FIG. 2 is a schematic cross-sectional view of a tactile feedback device according to an embodiment of the present disclosure;

图3根据本公开的一实施例,一种触觉回馈装置的剖面示意图;FIG. 3 is a schematic cross-sectional view of a tactile feedback device according to an embodiment of the present disclosure;

图4根据本公开的一实施例,一种高介电材料层的电性及触觉回馈测试;FIG. 4 is an electrical and tactile feedback test of a high dielectric material layer according to an embodiment of the present disclosure;

图5根据本公开的一实施例,一种低介电材料层的电性及触觉回馈测试;FIG. 5 is an electrical and tactile feedback test of a low-dielectric material layer according to an embodiment of the present disclosure;

图6根据本公开的一实施例,一种低介电材料层的电性及触觉回馈测试。FIG. 6 is an electrical and tactile feedback test of a low dielectric material layer according to an embodiment of the present disclosure.

符号说明:Symbol Description:

10:触觉回馈装置10: Haptic feedback device

12:基板12: Substrate

14:电极14: electrode

15:低介电材料层15: Low dielectric material layer

15a:第一低介电材料层15a: the first low dielectric material layer

15b:第二低介电材料层15b: the second low dielectric material layer

15c:第三低介电材料层15c: the third low dielectric material layer

16:高介电材料层16: High dielectric material layer

16a:第一高介电材料层16a: the first high dielectric material layer

16b:第二高介电材料层16b: the second high dielectric material layer

18:硬化层18: hardened layer

20:抗反射层20: Anti-reflection layer

22:抗污层22: Anti-fouling layer

THC:硬化层的厚度T HC : Thickness of hardened layer

THD:高介电材料层的厚度T HD : Thickness of high dielectric material layer

THD1:第一高介电材料层的厚度T HD1 : the thickness of the first high dielectric material layer

THD2:第二高介电材料层的厚度T HD2 : the thickness of the second high dielectric material layer

TLD:低介电材料层的厚度T LD : Thickness of the low dielectric material layer

TLD1:第一低介电材料层的厚度T LD1 : the thickness of the first low dielectric material layer

TLD2:第二低介电材料层的厚度T LD2 : the thickness of the second low dielectric material layer

TLD3:第三低介电材料层的厚度T LD3 : the thickness of the third low dielectric material layer

具体实施方式detailed description

以下的公开内容提供许多不同的实施例以实施本案的不同特征。以下的公开内容叙述各个构件及其排列方式的特定范例,以简化说明。当然,这些特定的范例并非用以限定。例如,若是本公开实施例叙述了一第一特征部件形成于一第二特征部件之上或上方,即表示其可能包含上述第一特征部件与上述第二特征部件是直接接触的实施例,亦可能包含了有附加特征部件形成于上述第一特征部件与上述第二特征部件之间,而使上述第一特征部件与第二特征部件可能未直接接触的实施例。The following disclosure provides many different embodiments to implement the different features of the present invention. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if an embodiment of the present disclosure describes that a first characteristic component is formed on or above a second characteristic component, it may include embodiments in which the first characteristic component is in direct contact with the second characteristic component, and also Embodiments may be included in which additional features are formed between the first and second features such that the first and second features may not be in direct contact.

应理解的是,额外的操作步骤可实施于所述方法之前、之间或之后,且在所述方法的其他实施例中,部分的操作步骤可被取代或省略。It should be understood that additional operational steps may be performed before, during or after the method, and in other embodiments of the method, some of the operational steps may be replaced or omitted.

此外,其中可能用到与空间相关用词,例如「在…下方」、「下方」、「较低的」、「在…上方」、「上方」、「较高的」及类似的用词,这些空间相关用词是为了便于描述图示中一个(些)元件或特征部件与另一个(些)元件或特征部件之间的关系,这些空间相关用词包括使用中或操作中的装置的不同方位,以及附图中所描述的方位。当装置被转向不同方位时(旋转45度或其他方位),则其中所使用的空间相关形容词也将依转向后的方位来解释。再者,当述及一第一材料层位于一第二材料层上或之上时,包括第一材料层与第二材料层直接接触的情形,或者,其间亦可能间隔有一或更多其它材料层的情形,在此情形中,第一材料层与第二材料层之间可能不直接接触。在本公开一些实施例中,关于接合、连接的用语例如「连接」、「互连」等,除非特别定义,否则可指两个结构是直接接触,或者亦可指两个结构并非直接接触,其中有其它结构设于此两个结构之间。且此关于接合、连接的用语亦可包括两个结构都可移动,或者两个结构都固定的情况。In addition, spatial terms such as "below", "beneath", "lower", "above", "above", "higher" and similar terms may be used herein, These spatially relative terms are used to facilitate the description of the relationship between one (some) element or feature and another (some) element or feature in the drawings. orientation, and the orientation depicted in the accompanying drawings. When the device is turned in a different orientation (rotated by 45 degrees or otherwise), the spatially relative adjectives used therein will also be interpreted in terms of the turned orientation. Furthermore, when it is mentioned that a first material layer is located on or over a second material layer, it includes the situation that the first material layer is in direct contact with the second material layer, or there may be one or more other material layers interposed therebetween. layer, in which case there may be no direct contact between the first material layer and the second material layer. In some embodiments of the present disclosure, terms such as "connection" and "interconnection" related to bonding and connection, unless otherwise specified, may mean that two structures are in direct contact, or may also mean that two structures are not in direct contact, There are other structures located between these two structures. And the terms about joining and connecting may also include the situation that both structures are movable, or both structures are fixed.

在说明书中,「约」、「大约」、「大抵」、「大致」、「实质上」、「相同」、「相似」的用语通常表示一特征值在一给定值的正负15%之内,或正负10%之内,或正负5%之内,或正负3%之内,或正负2%之内,或正负1%之内,或正负0.5%之内的范围。在此给定的数量为大约的数量,亦即在没有特定说明「约」、「大约」、「大抵」、「大致」、「实质上」的情况下,仍可隐含「约」、「大约」、「大抵」、「大致」、「实质上」的含义。In the description, the terms "about", "approximately", "approximately", "approximately", "substantially", "the same", and "similar" usually mean that a characteristic value is within plus or minus 15% of a given value. within, or within plus or minus 10%, or within plus or minus 5%, or within plus or minus 3%, or within plus or minus 2%, or within plus or minus 1%, or within plus or minus 0.5% scope. The quantities given here are approximate quantities, that is to say, "about", "approximately", "approximately", "approximately" and "substantially" can still be implied if there is no specific description of "about", "approximately", "substantially" The meanings of "approximately", "approximately", "approximately", and "substantially".

应当理解的是,虽然本文使用术语「第一」、「第二」、「第三」等来描述不同的元件、部件、区域、层及/或区段,这些元件、部件、区域、层及/或区段不应当被这些术语所限制。这些术语可以仅被用于将一个元件、部件、区域、层或区段与另一元件、部件、区域、层或区段区分开来。因此,在不脱离本公开的技术的前提下,以下讨论的第一元件、部件、区域、层或区段可以被称为第二元件、部件、区域、层或区段。It should be understood that although the terms "first", "second", "third", etc. are used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the technology of the present disclosure.

除非另外定义,在此使用的全部用语(包括技术及科学用语)具有与本领域技术人员所通常理解的相同涵义。能理解的是,这些用语,例如在通常使用的字典中定义的用语,应被解读成具有与相关技术及本公开的背景或上下文一致的意思,而不应以一理想化或过度正式的方式解读,除非在本公开实施例有特别定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It can be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having meanings consistent with the background or context of the related art and the present disclosure, and should not be interpreted in an idealized or overly formal manner. Interpretation, unless otherwise defined in the embodiments of the present disclosure.

请参阅图1,根据本公开的一实施例,提供一种触觉回馈装置10。图1为触觉回馈装置10的剖面示意图。Please refer to FIG. 1 , according to an embodiment of the present disclosure, a tactile feedback device 10 is provided. FIG. 1 is a schematic cross-sectional view of a tactile feedback device 10 .

在图1中,触觉回馈装置10包括基板12、多个电极14、高介电材料层16、硬化层18、抗反射层20、以及抗污层22。电极14设置于基板12上。高介电材料层16设置于电极14上,并填入电极14之间。硬化层18设置于高介电材料层16上。抗反射层20设置于硬化层18上。抗污层22设置于抗反射层20上。In FIG. 1 , the tactile feedback device 10 includes a substrate 12 , a plurality of electrodes 14 , a high dielectric material layer 16 , a hardening layer 18 , an antireflective layer 20 , and an antifouling layer 22 . The electrodes 14 are disposed on the substrate 12 . The high dielectric material layer 16 is disposed on the electrodes 14 and filled between the electrodes 14 . The hardening layer 18 is disposed on the high dielectric material layer 16 . The anti-reflection layer 20 is disposed on the hardened layer 18 . The anti-fouling layer 22 is disposed on the anti-reflection layer 20 .

在部分实施例中,基板12可包括硬质基板,例如,玻璃基板,但本公开不限于此。在部分实施例中,基板12可包括软质基板,例如,聚酰亚胺(PI)基板,但本公开不限于此。在部分实施例中,电极14可由任何适合的导电材料所构成。In some embodiments, the substrate 12 may include a rigid substrate, such as a glass substrate, but the disclosure is not limited thereto. In some embodiments, the substrate 12 may include a flexible substrate, such as a polyimide (PI) substrate, but the disclosure is not limited thereto. In some embodiments, the electrodes 14 may be formed of any suitable conductive material.

在部分实施例中,高介电材料层16的介电常数大约介于10至40之间。在部分实施例中,高介电材料层16的介电常数大约介于10至15之间。在部分实施例中,高介电材料层16可包括有机介电材料掺杂高介电纳米粒子,例如,聚乙烯酚(PVP)、聚甲基丙烯酸酯(PMMA)、或聚乙烯醇掺杂二氧化钛(TiO2)、钛酸钡(BaTiO3)或氧化锆(ZrO2),但本公开不限于此。在部分实施例中,高介电材料层16可包括无机高介电材料,例如,二氧化铪、氮化铝、或二氧化钛,但本公开不限于此。在部分实施例中,高介电材料层16的厚度THD大约介于4微米至20微米之间。在部分实施例中,高介电材料层16的厚度THD大约介于4微米至8微米之间。In some embodiments, the dielectric constant of the high dielectric material layer 16 is about 10-40. In some embodiments, the dielectric constant of the high dielectric material layer 16 is about 10-15. In some embodiments, the high dielectric material layer 16 may include organic dielectric materials doped with high dielectric nanoparticles, for example, polyvinylphenol (PVP), polymethacrylate (PMMA), or polyvinyl alcohol doped Titanium dioxide (TiO2), barium titanate (BaTiO3) or zirconia (ZrO2), but the present disclosure is not limited thereto. In some embodiments, the high dielectric material layer 16 may include inorganic high dielectric materials, such as hafnium dioxide, aluminum nitride, or titanium dioxide, but the disclosure is not limited thereto. In some embodiments, the thickness T HD of the high dielectric material layer 16 is approximately between 4 μm and 20 μm. In some embodiments, the thickness T HD of the high dielectric material layer 16 is approximately between 4 microns and 8 microns.

在部分实施例中,硬化层18可包括高硬度有机材料,例如,硅氧烷材料、环氧树脂或有机硅树脂,但本公开不限于此。在部分实施例中,硬化层18的厚度THC大约介于4微米至10微米之间。In some embodiments, the hardening layer 18 may include a high-hardness organic material, such as silicone material, epoxy resin or silicone resin, but the disclosure is not limited thereto. In some embodiments, the thickness T HC of the hardened layer 18 is approximately between 4 μm and 10 μm.

在部分实施例中,抗反射层20的介电常数大约介于3至10之间。在部分实施例中,抗反射层20可包括无机低介电材料,例如,氧化硅、氮化硅或氮氧化硅,但本公开不限于此。In some embodiments, the dielectric constant of the anti-reflection layer 20 is about 3-10. In some embodiments, the antireflection layer 20 may include inorganic low dielectric materials, such as silicon oxide, silicon nitride or silicon oxynitride, but the disclosure is not limited thereto.

在部分实施例中,抗污层22可包括氟是有机物或二氧化钛,但本公开不限于此。In some embodiments, the antifouling layer 22 may include organic fluorine or titanium dioxide, but the disclosure is not limited thereto.

请参阅图2,根据本公开的一实施例,提供一种触觉回馈装置10。图2为触觉回馈装置10的剖面示意图。Please refer to FIG. 2 , according to an embodiment of the present disclosure, a tactile feedback device 10 is provided. FIG. 2 is a schematic cross-sectional view of the tactile feedback device 10 .

在图2中,触觉回馈装置10包括基板12、多个电极14、低介电材料层15、高介电材料层16、硬化层18、抗反射层20、以及抗污层22。电极14设置于基板12上。低介电材料层15设置于电极14上,并填入电极14之间。高介电材料层16设置于低介电材料层15上。硬化层18设置于高介电材料层16上。抗反射层20设置于硬化层18上。抗污层22设置于抗反射层20上。在部分实施例中,可调整低介电材料层15与高介电材料层16设置的顺序,例如,高介电材料层16设置于电极14上,并填入电极14之间,以及低介电材料层15设置于高介电材料层16上(未图示)。In FIG. 2 , the tactile feedback device 10 includes a substrate 12 , a plurality of electrodes 14 , a low dielectric material layer 15 , a high dielectric material layer 16 , a hardening layer 18 , an antireflection layer 20 , and an antifouling layer 22 . The electrodes 14 are disposed on the substrate 12 . The low dielectric material layer 15 is disposed on the electrodes 14 and filled between the electrodes 14 . The high dielectric material layer 16 is disposed on the low dielectric material layer 15 . The hardening layer 18 is disposed on the high dielectric material layer 16 . The anti-reflection layer 20 is disposed on the hardened layer 18 . The anti-fouling layer 22 is disposed on the anti-reflection layer 20 . In some embodiments, the order of setting the low dielectric material layer 15 and the high dielectric material layer 16 can be adjusted, for example, the high dielectric material layer 16 is disposed on the electrode 14 and filled between the electrodes 14, and the low dielectric material layer 16 The electrical material layer 15 is disposed on the high dielectric material layer 16 (not shown).

在部分实施例中,基板12可包括硬质基板,例如,玻璃基板,但本公开不限于此。在部分实施例中,基板12可包括软质基板,例如,聚酰亚胺(PI)基板,但本公开不限于此。在部分实施例中,电极14可由任何适合的导电材料所构成。In some embodiments, the substrate 12 may include a rigid substrate, such as a glass substrate, but the disclosure is not limited thereto. In some embodiments, the substrate 12 may include a flexible substrate, such as a polyimide (PI) substrate, but the disclosure is not limited thereto. In some embodiments, the electrodes 14 may be formed of any suitable conductive material.

在部分实施例中,低介电材料层15的介电常数大约介于3至10之间。在部分实施例中,低介电材料层15的介电常数大约介于4至7之间。在部分实施例中,低介电材料层15可包括无机低介电材料,例如,氧化硅、氮化硅或氮氧化硅,但本公开不限于此。在部分实施例中,低介电材料层15的厚度TLD大约介于0.1微米至10微米之间。在部分实施例中,低介电材料层15的厚度TLD大约介于0.3微米至3微米之间。In some embodiments, the dielectric constant of the low dielectric material layer 15 is about 3-10. In some embodiments, the dielectric constant of the low dielectric material layer 15 is about 4-7. In some embodiments, the low dielectric material layer 15 may include an inorganic low dielectric material, such as silicon oxide, silicon nitride or silicon oxynitride, but the disclosure is not limited thereto. In some embodiments, the thickness T LD of the low dielectric material layer 15 is approximately between 0.1 μm and 10 μm. In some embodiments, the thickness T LD of the low dielectric material layer 15 is approximately between 0.3 μm and 3 μm.

在部分实施例中,高介电材料层16的介电常数大约介于10至40之间。在部分实施例中,高介电材料层16的介电常数大约介于10至15之间。在部分实施例中,高介电材料层16可包括有机高介电材料掺杂高介电纳米粒子,例如,聚乙烯酚(PVP)、聚甲基丙烯酸酯(PMMA)、或聚乙烯醇掺杂二氧化钛(TiO2)、钛酸钡(BaTiO3)或氧化锆(ZrO2),但本公开不限于此。在部分实施例中,高介电材料层16可包括无机高介电材料,例如,二氧化铪、氮化铝、或二氧化钛,但本公开不限于此。在部分实施例中,高介电材料层16的厚度THD大约介于4微米至20微米之间。在部分实施例中,高介电材料层16的厚度THD大约介于4微米至8微米之间。In some embodiments, the dielectric constant of the high dielectric material layer 16 is about 10-40. In some embodiments, the dielectric constant of the high dielectric material layer 16 is about 10-15. In some embodiments, the high dielectric material layer 16 may include organic high dielectric materials doped high dielectric nanoparticles, for example, polyvinylphenol (PVP), polymethacrylate (PMMA), or polyvinyl alcohol doped Titanium dioxide (TiO2), barium titanate (BaTiO3) or zirconia (ZrO2), but the present disclosure is not limited thereto. In some embodiments, the high dielectric material layer 16 may include inorganic high dielectric materials, such as hafnium dioxide, aluminum nitride, or titanium dioxide, but the disclosure is not limited thereto. In some embodiments, the thickness T HD of the high dielectric material layer 16 is approximately between 4 μm and 20 μm. In some embodiments, the thickness T HD of the high dielectric material layer 16 is approximately between 4 microns and 8 microns.

在部分实施例中,硬化层18可包括高硬度有机材料,例如,硅氧烷材料、环氧树脂或有机硅树脂,但本公开不限于此。在部分实施例中,硬化层18的厚度THC大约介于4微米至10微米之间。In some embodiments, the hardening layer 18 may include a high-hardness organic material, such as silicone material, epoxy resin or silicone resin, but the disclosure is not limited thereto. In some embodiments, the thickness T HC of the hardened layer 18 is approximately between 4 μm and 10 μm.

在部分实施例中,抗反射层20的介电常数大约介于4至10之间。在部分实施例中,抗反射层20可包括无机低介电材料,例如,氧化硅、氮化硅或氮氧化硅,但本公开不限于此。In some embodiments, the dielectric constant of the anti-reflection layer 20 is about 4-10. In some embodiments, the antireflection layer 20 may include inorganic low dielectric materials, such as silicon oxide, silicon nitride or silicon oxynitride, but the disclosure is not limited thereto.

在部分实施例中,抗污层22可包括氟系有机物或二氧化钛,但本公开不限于此。In some embodiments, the antifouling layer 22 may include fluorine-based organics or titanium dioxide, but the disclosure is not limited thereto.

请参阅图3,根据本公开的一实施例,提供一种触觉回馈装置10。图3为触觉回馈装置10的剖面示意图。Please refer to FIG. 3 , according to an embodiment of the present disclosure, a tactile feedback device 10 is provided. FIG. 3 is a schematic cross-sectional view of the tactile feedback device 10 .

在图3中,触觉回馈装置10包括基板12、多个电极14、第一低介电材料层15a、第一高介电材料层16a、第二低介电材料层15b、第二高介电材料层16b、第三低介电材料层15c、硬化层18、抗反射层20、以及抗污层22。电极14设置于基板12上。第一低介电材料层15a设置于电极14上,并填入电极14之间。第一高介电材料层16a设置于第一低介电材料层15a上。第二低介电材料层15b设置于第一高介电材料层16a。第二高介电材料层16b设置于第二低介电材料层15b。第三低介电材料层15c设置于第二高介电材料层16b。硬化层18设置于第三低介电材料层15c上。抗反射层20设置于硬化层18上。抗污层22设置于抗反射层20上。在本实施例中,低介电材料层(15a、15b、15c)与高介电材料层(16a、16b)以如图3所示的交替方式设置于电极14与抗反射层20之间。在部分实施例中,低介电材料层(15a、15b、15c)与高介电材料层(16a、16b)亦可以其他交替方式设置(未图示)。在部分实施例中,低介电材料层(15a、15b、15c)与高介电材料层(16a、16b)亦可以非交替方式设置(未图示)。In FIG. 3 , the tactile feedback device 10 includes a substrate 12, a plurality of electrodes 14, a first low dielectric material layer 15a, a first high dielectric material layer 16a, a second low dielectric material layer 15b, a second high dielectric material layer The material layer 16b, the third low dielectric material layer 15c, the hardening layer 18, the antireflection layer 20, and the antifouling layer 22. The electrodes 14 are disposed on the substrate 12 . The first low dielectric material layer 15 a is disposed on the electrodes 14 and filled between the electrodes 14 . The first high dielectric material layer 16a is disposed on the first low dielectric material layer 15a. The second low dielectric material layer 15b is disposed on the first high dielectric material layer 16a. The second high dielectric material layer 16b is disposed on the second low dielectric material layer 15b. The third low dielectric material layer 15c is disposed on the second high dielectric material layer 16b. The hardening layer 18 is disposed on the third low dielectric material layer 15c. The anti-reflection layer 20 is disposed on the hardened layer 18 . The anti-fouling layer 22 is disposed on the anti-reflection layer 20 . In this embodiment, the low dielectric material layers ( 15 a , 15 b , 15 c ) and high dielectric material layers ( 16 a , 16 b ) are alternately disposed between the electrodes 14 and the antireflection layer 20 as shown in FIG. 3 . In some embodiments, the low dielectric material layers ( 15 a , 15 b , 15 c ) and the high dielectric material layers ( 16 a , 16 b ) can also be alternately arranged in other ways (not shown). In some embodiments, the low dielectric material layers ( 15 a , 15 b , 15 c ) and the high dielectric material layers ( 16 a , 16 b ) may also be arranged in a non-alternating manner (not shown).

在部分实施例中,基板12可包括硬质基板,例如,玻璃基板,但本公开不限于此。在部分实施例中,基板12可包括软质基板,例如,聚酰亚胺(PI)基板,但本公开不限于此。在部分实施例中,电极14可由任何适合的导电材料所构成。In some embodiments, the substrate 12 may include a rigid substrate, such as a glass substrate, but the disclosure is not limited thereto. In some embodiments, the substrate 12 may include a flexible substrate, such as a polyimide (PI) substrate, but the disclosure is not limited thereto. In some embodiments, the electrodes 14 may be formed of any suitable conductive material.

在部分实施例中,第一低介电材料层15a、第二低介电材料层15b、以及第三低介电材料层15c的介电常数大约介于3至10之间。在部分实施例中,第一低介电材料层15a、第二低介电材料层15b、以及第三低介电材料层15c的介电常数大约介于4至7之间。在部分实施例中,第一低介电材料层15a、第二低介电材料层15b、以及第三低介电材料层15c可包括有机低介电材料,例如,氧烷材料、环氧树脂或有机硅树脂,但本公开不限于此。在部分实施例中,第一低介电材料层15a、第二低介电材料层15b、以及第三低介电材料层15c可包括无机低介电材料,例如,氧化硅、氮化硅或氮氧化硅,但本公开不限于此。在部分实施例中,第一低介电材料层15a的厚度TLD1、第二低介电材料层15b的厚度TLD2、以及第三低介电材料层15c的厚度TLD3分别大约介于0.1微米至10微米之间。在部分实施例中,第一低介电材料层15a的厚度TLD1、第二低介电材料层15b的厚度TLD2、以及第三低介电材料层15c的厚度TLD3分别大约介于0.3微米至3微米之间。In some embodiments, the dielectric constants of the first low dielectric material layer 15 a , the second low dielectric material layer 15 b , and the third low dielectric material layer 15 c are about 3-10. In some embodiments, the dielectric constants of the first low dielectric material layer 15 a , the second low dielectric material layer 15 b , and the third low dielectric material layer 15 c are about 4-7. In some embodiments, the first low dielectric material layer 15a, the second low dielectric material layer 15b, and the third low dielectric material layer 15c may include organic low dielectric materials, such as oxane materials, epoxy resins, etc. Or silicone resin, but the present disclosure is not limited thereto. In some embodiments, the first low dielectric material layer 15a, the second low dielectric material layer 15b, and the third low dielectric material layer 15c may include inorganic low dielectric materials, such as silicon oxide, silicon nitride or silicon oxynitride, but the disclosure is not limited thereto. In some embodiments, the thickness T LD1 of the first low dielectric material layer 15a, the thickness T LD2 of the second low dielectric material layer 15b, and the thickness T LD3 of the third low dielectric material layer 15c are respectively about 0.1 microns to 10 microns. In some embodiments, the thickness T LD1 of the first low dielectric material layer 15a, the thickness T LD2 of the second low dielectric material layer 15b, and the thickness T LD3 of the third low dielectric material layer 15c are respectively about 0.3 between microns and 3 microns.

在部分实施例中,第一高介电材料层16a与第二高介电材料层16b的介电常数大约介于10至40之间。在部分实施例中,第一高介电材料层16a与第二高介电材料层16b的介电常数大约介于10至15之间。在部分实施例中,第一高介电材料层16a与第二高介电材料层16b可包括有机高介电材料掺杂高介电纳米粒子,例如,聚乙烯酚(PVP)、聚甲基丙烯酸酯(PMMA)、或聚乙烯醇掺杂二氧化钛(TiO2)、钛酸钡(BaTiO3)或氧化锆(ZrO2),但本公开不限于此。在部分实施例中,第一高介电材料层16a与第二高介电材料层16b可包括无机高介电材料,例如,二氧化铪、氮化铝、或二氧化钛,但本公开不限于此。在部分实施例中,第一高介电材料层16a的厚度THD1与第二高介电材料层16b的厚度THD2分别大约介于4微米至20微米之间。在部分实施例中,第一高介电材料层16a的厚度THD1与第二高介电材料层16b的厚度THD2分别大约介于4微米至8微米之间。在部分实施例中,高介电材料层的总厚度(THD1+THD2)大于低介电材料层的总厚度(TLD1+TLD2+TLD3)。In some embodiments, the dielectric constants of the first high dielectric material layer 16a and the second high dielectric material layer 16b are about 10-40. In some embodiments, the dielectric constants of the first high dielectric material layer 16a and the second high dielectric material layer 16b are about 10-15. In some embodiments, the first high dielectric material layer 16a and the second high dielectric material layer 16b may include organic high dielectric materials doped with high dielectric nanoparticles, for example, polyvinylphenol (PVP), polymethyl Acrylate (PMMA), or polyvinyl alcohol doped titanium dioxide (TiO2), barium titanate (BaTiO3), or zirconia (ZrO2), but the disclosure is not limited thereto. In some embodiments, the first high dielectric material layer 16a and the second high dielectric material layer 16b may include inorganic high dielectric materials, such as hafnium dioxide, aluminum nitride, or titanium dioxide, but the disclosure is not limited thereto. . In some embodiments, the thickness T HD1 of the first high dielectric material layer 16 a and the thickness T HD2 of the second high dielectric material layer 16 b are respectively approximately between 4 μm and 20 μm. In some embodiments, the thickness T HD1 of the first high dielectric material layer 16 a and the thickness T HD2 of the second high dielectric material layer 16 b are respectively approximately between 4 micrometers and 8 micrometers. In some embodiments, the total thickness (T HD1 +T HD2 ) of the high dielectric material layer is greater than the total thickness (T LD1 +T LD2 +T LD3 ) of the low dielectric material layer.

在部分实施例中,硬化层18可包括高硬度有机材料,例如,硅氧烷材料、环氧树脂或有机硅树脂,但本公开不限于此。在部分实施例中,硬化层18的厚度THC大约介于4微米至10微米之间。In some embodiments, the hardening layer 18 may include a high-hardness organic material, such as silicone material, epoxy resin or silicone resin, but the disclosure is not limited thereto. In some embodiments, the thickness T HC of the hardened layer 18 is approximately between 4 μm and 10 μm.

在部分实施例中,抗反射层20的介电常数大约介于3至10之间。在部分实施例中,抗反射层20可包括无机低介电材料,例如,氧化硅、氮化硅或氮氧化硅,但本公开不限于此。In some embodiments, the dielectric constant of the anti-reflection layer 20 is about 3-10. In some embodiments, the antireflection layer 20 may include inorganic low dielectric materials, such as silicon oxide, silicon nitride or silicon oxynitride, but the disclosure is not limited thereto.

在部分实施例中,抗污层22可包括氟是有机物或二氧化钛,但本公开不限于此。In some embodiments, the antifouling layer 22 may include organic fluorine or titanium dioxide, but the disclosure is not limited thereto.

实施例1Example 1

本公开高介电材料层的电性及触觉回馈测试Electrical properties and tactile feedback test of the disclosed high dielectric material layer

本实施例针对本公开所使用的高介电材料层进行其电性及触觉回馈的测试,以评估上述高介电材料层是否合规。此处选用介电常数为11的高介电材料层进行ESD及触觉回馈的合规测试,结果如图4所示。请参阅图4,ESD的合规标准为容许崩溃电压达15KV,触觉回馈的合规标准为达标准值的20%。由图中可看出,当上述高介电材料层的厚度设定于5至8微米时,此高介电材料层可通过ESD测试,且其触觉回馈可维持40%至60%的效果。由测试结果显示,上述高介电材料层可提供适当且足够的设计空间(design window),应用于本公开触觉回馈装置中。In this embodiment, the electrical properties and tactile feedback tests are performed on the high dielectric material layer used in the present disclosure, so as to evaluate whether the above high dielectric material layer complies with regulations. Here, a high-dielectric material layer with a dielectric constant of 11 is selected for compliance testing of ESD and tactile feedback, and the results are shown in Figure 4. Please refer to Figure 4, the compliance standard for ESD is a allowable breakdown voltage up to 15KV, and the compliance standard for haptic feedback is 20% of the standard value. It can be seen from the figure that when the thickness of the high dielectric material layer is set at 5 to 8 microns, the high dielectric material layer can pass the ESD test, and its tactile feedback can maintain 40% to 60% of the effect. The test results show that the above-mentioned high dielectric material layer can provide an appropriate and sufficient design window for application in the tactile feedback device of the present disclosure.

比较例1Comparative example 1

低介电材料层的电性及触觉回馈测试(1)Electrical properties and tactile feedback test of low dielectric material layer(1)

本比较例针对低介电材料层进行其电性及触觉回馈的测试,以评估上述低介电材料层是否合规。此处选用介电常数为3.85的低介电材料层进行ESD及触觉回馈的合规测试,结果如图5所示。请参阅图5,ESD的合规标准为容许崩溃电压达15KV,触觉回馈的合规标准为达标准值的20%。由图中可看出,当上述低介电材料层的厚度小于4微米时,虽此低介电材料层可维持触觉回馈效果,但其无法通过ESD测试,需将上述低介电材料层的厚度设定大于12微米以上时,方能通过ESD测试,然而,此时该低介电材料层的触觉回馈已降至20%以下(无触觉回馈效果)。由测试结果显示,上述低介电材料层并无法提供任何设计空间,不适用于本公开触觉回馈装置中。In this comparative example, the electric properties and tactile feedback tests of the low-dielectric material layer are conducted to evaluate whether the above-mentioned low-dielectric material layer complies with regulations. Here, a low-dielectric material layer with a dielectric constant of 3.85 is selected for compliance testing of ESD and tactile feedback, and the results are shown in Figure 5. Please refer to Figure 5, the compliance standard for ESD is a allowable breakdown voltage up to 15KV, and the compliance standard for haptic feedback is 20% of the standard value. It can be seen from the figure that when the thickness of the above-mentioned low-dielectric material layer is less than 4 microns, although the low-dielectric material layer can maintain the tactile feedback effect, it cannot pass the ESD test. Only when the thickness is set to be greater than 12 microns can the ESD test be passed. However, at this time, the tactile feedback of the low dielectric material layer has dropped below 20% (no tactile feedback effect). The test results show that the above-mentioned low-dielectric material layer does not provide any design space, and is not suitable for the tactile feedback device of the present disclosure.

比较例2Comparative example 2

低介电材料层的电性及触觉回馈测试(2)Electrical properties and tactile feedback test of low dielectric material layer(2)

本比较例针对低介电材料层进行其电性及触觉回馈的测试,以评估上述低介电材料层是否合规。此处选用介电常数为3.47的低介电材料层进行ESD及触觉回馈的合规测试,结果如图6所示。请参阅图6,ESD的合规标准为容许崩溃电压达15KV,触觉回馈的合规标准为达标准值的20%。由图中可看出,当上述低介电材料层的厚度小于6微米时,虽此低介电材料层可维持触觉回馈效果,但其无法通过ESD测试,需将上述低介电材料层的厚度设定大于8微米以上时,方能通过ESD测试,然而,此时该低介电材料层的触觉回馈已降至20%以下(无触觉回馈效果)。由测试结果显示,上述低介电材料层并无法提供任何设计空间,不适用于本公开触觉回馈装置中。In this comparative example, the electric properties and tactile feedback tests of the low-dielectric material layer are conducted to evaluate whether the above-mentioned low-dielectric material layer complies with regulations. Here, a low-dielectric material layer with a dielectric constant of 3.47 is selected for compliance testing of ESD and tactile feedback, and the results are shown in Figure 6. Please refer to Figure 6, the compliance standard for ESD is a allowable breakdown voltage up to 15KV, and the compliance standard for haptic feedback is 20% of the standard value. It can be seen from the figure that when the thickness of the above-mentioned low-dielectric material layer is less than 6 microns, although the low-dielectric material layer can maintain the tactile feedback effect, it cannot pass the ESD test. Only when the thickness is set to be greater than 8 microns can the ESD test be passed. However, at this time, the tactile feedback of the low dielectric material layer has dropped below 20% (no tactile feedback effect). The test results show that the above-mentioned low-dielectric material layer does not provide any design space, and is not suitable for the tactile feedback device of the present disclosure.

在本公开中,于抗反射层与电极之间设置单一高介电材料层或设置高介电材料层与低介电材料层组成的复合层,借由引进可储纳静电荷的特定高介电材料(其介电常数大约介于10至40之间),以解决传统抗反射层在ESD测试过程中容易被击穿的问题,并有效避免因单纯增加抗反射层厚度而造成触觉回馈功能失效的问题。In the present disclosure, a single high-dielectric material layer or a composite layer composed of a high-dielectric material layer and a low-dielectric material layer is arranged between the anti-reflection layer and the electrode, by introducing a specific high-dielectric material that can store static charges Electrical materials (with a dielectric constant between about 10 and 40) to solve the problem that the traditional anti-reflection layer is easily broken down during the ESD test, and effectively avoid the tactile feedback function caused by simply increasing the thickness of the anti-reflection layer failure problem.

上述一些实施例的部件,以便本领域技术人员可以更理解本公开实施例的观点。本领域技术人员应该理解,他们能以本公开实施例为基础,设计或修改其他制程和结构以达到与在此介绍的实施例相同的目的及/或优势。本领域技术人员也应该理解到,此类等效的结构并无悖离本公开的精神与范围,且他们能在不违背本公开的精神和范围之下,做各式各样的改变、取代和替换。因此,本公开的保护范围当视后附的权利要求所界定者为准。另外,虽然本公开已以数个较佳实施例公开如上,然其并非用以限定本公开。The components of some of the above embodiments are described so that those skilled in the art can better understand the viewpoints of the embodiments of the present disclosure. Those skilled in the art should understand that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purpose and/or advantages as the embodiments introduced here. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of the present disclosure, and they can make various changes and substitutions without departing from the spirit and scope of the present disclosure. and replace. Therefore, the scope of protection of the present disclosure should be defined by the appended claims. In addition, although the present disclosure has been disclosed above with several preferred embodiments, they are not intended to limit the present disclosure.

整份说明书对特征、优点或类似语言的引用,并非意味可以利用本公开实现的所有特征和优点应该或者可以在本公开的任何单个实施例中实现。相对地,涉及特征和优点的语言被理解为其意味着结合实施例描述的特定特征、优点或特性包括在本公开的至少一个实施例中。因而,在整份说明书中对特征和优点以及类似语言的讨论可以但不一定代表相同的实施例。Reference throughout this specification to features, advantages, or similar language, does not imply that all features and advantages that may be realized with the present disclosure should or can be achieved in any single embodiment of the disclosure. Conversely, language referring to the features and advantages is understood to mean that a specific feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of the features and advantages, and similar language, throughout this specification may, but do not necessarily, refer to the same embodiment.

再者,在一个或多个实施例中,可以任何合适的方式组合本公开的所描述的特征、优点和特性。根据本文的描述,相关领域的技术人员将意识到,可在没有特定实施例的一个或多个特定特征或优点的情况下实现本公开。在其他情况下,在某些实施例中可辨识附加的特征和优点,这些特征和优点可能不存在于本公开的所有实施例中。Furthermore, the described features, advantages, and characteristics of the disclosure may be combined in any suitable manner in one or more embodiments. One skilled in the relevant art will recognize, from the description herein, that the present disclosure can be practiced without one or more of the specific features or advantages of a particular embodiment. In other cases, additional features and advantages may be recognized in certain embodiments, which may not be present in all embodiments of the present disclosure.

Claims (10)

1.一种触觉回馈装置,包括:1. A tactile feedback device, comprising: 一基板;a substrate; 多个电极,设置于该基板上;a plurality of electrodes arranged on the substrate; 至少一高介电材料层,设置于该多个电极上;以及at least one high dielectric material layer disposed on the plurality of electrodes; and 一抗反射层,设置于该至少一高介电材料层上。An anti-reflection layer is disposed on the at least one high dielectric material layer. 2.如权利要求1所述的触觉回馈装置,其特征在于,该至少一高介电材料层包括一高介电材料层。2. The tactile feedback device according to claim 1, wherein the at least one high dielectric material layer comprises a high dielectric material layer. 3.如权利要求2所述的触觉回馈装置,其特征在于,该高介电材料层的介电常数介于10至40之间。3 . The tactile feedback device according to claim 2 , wherein the dielectric constant of the high dielectric material layer is between 10 and 40. 4 . 4.如权利要求2所述的触觉回馈装置,其特征在于,该高介电材料层的厚度介于4微米至20微米之间。4. The tactile feedback device according to claim 2, wherein the thickness of the high dielectric material layer is between 4 microns and 20 microns. 5.如权利要求2所述的触觉回馈装置,更包括一低介电材料层,设置于该高介电材料层的一侧。5. The tactile feedback device as claimed in claim 2, further comprising a low dielectric material layer disposed on one side of the high dielectric material layer. 6.如权利要求5所述的触觉回馈装置,其特征在于,该低介电材料层的介电常数介于4至10之间。6 . The tactile feedback device according to claim 5 , wherein the dielectric constant of the low dielectric material layer is between 4 and 10. 7.如权利要求1所述的触觉回馈装置,其特征在于,该至少一高介电材料层包括多个高介电材料层。7. The haptic feedback device according to claim 1, wherein the at least one high dielectric material layer comprises a plurality of high dielectric material layers. 8.如权利要求7所述的触觉回馈装置,更包括多个低介电材料层,与该多个高介电材料层交替设置。8 . The tactile feedback device as claimed in claim 7 , further comprising a plurality of low dielectric material layers arranged alternately with the plurality of high dielectric material layers. 9.如权利要求8所述的触觉回馈装置,其特征在于,该多个高介电材料层的总厚度大于该多个低介电材料层的总厚度。9. The tactile feedback device according to claim 8, wherein the total thickness of the plurality of high dielectric material layers is greater than the total thickness of the plurality of low dielectric material layers. 10.如权利要求1所述的触觉回馈装置,更包括一硬化层,设置于该至少一高介电材料层上。10. The tactile feedback device as claimed in claim 1, further comprising a hardened layer disposed on the at least one high dielectric material layer.
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