CN115692146A - Edge intake components and semiconductor process equipment - Google Patents
Edge intake components and semiconductor process equipment Download PDFInfo
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Abstract
本发明提供一种边缘进气组件,用于设置于工艺腔室的顶部开口上,自工艺腔室的边缘向工艺腔室内通入工艺气体,边缘进气组件包括:上环盖、中环盖、下环盖和进气管路,上环盖、中环盖和下环盖叠置于工艺腔室上,上环盖上设有至少一个进气孔,进气孔通过进气管路引入工艺气体;下环盖的内环壁上环绕设有多个喷气孔,喷气孔用于向工艺腔室内喷出工艺气体;上环盖和中环盖之间形成有至少一组匀气组合气道,每组匀气组合气道分别与一个进气孔和多个喷气孔连通,通过匀气组合气道将进气孔引入的工艺气体从多个喷气孔中排出。本发明提供的边缘进气组件能够在保证进气均匀性的同时,提高进气结构整体稳定性及维护性能。本发明还提供一种半导体工艺设备。
The present invention provides an edge air inlet assembly, which is used to be arranged on the top opening of a process chamber, and process gas is introduced into the process chamber from the edge of the process chamber. The edge air inlet assembly includes: an upper ring cover, a middle ring cover, The lower ring cover and the air inlet pipeline, the upper ring cover, the middle ring cover and the lower ring cover are stacked on the process chamber, and at least one air inlet is arranged on the upper ring cover, and the air inlet introduces process gas through the inlet pipeline; the lower The inner ring wall of the ring cover is surrounded by a plurality of gas injection holes, which are used to spray process gas into the process chamber; at least one group of uniform gas combination air channels is formed between the upper ring cover and the middle ring cover, and each group of uniform gas The combined gas channel is respectively connected with one gas inlet hole and a plurality of gas injection holes, and the process gas introduced by the gas inlet hole is discharged from the plurality of gas injection holes through the uniform gas combination gas channel. The edge air intake assembly provided by the invention can improve the overall stability and maintenance performance of the air intake structure while ensuring the uniformity of the intake air. The invention also provides a semiconductor process equipment.
Description
技术领域technical field
本发明涉及半导体工艺设备领域,具体地,涉及一种半导体工艺设备的边缘进气组件和一种半导体工艺设备。The invention relates to the field of semiconductor process equipment, in particular to an edge air intake component of semiconductor process equipment and semiconductor process equipment.
背景技术Background technique
电感耦合等离子体(Inductive Coupled Plasma,ICP)刻蚀机广泛应用于集成电路(integrated circuit,IC)和半导体制程中,在等离子体刻蚀机的工艺腔室中,腔室的进气路径分为中心进气和边缘进气,不同的工艺气体分别通过中心进气和边缘进气路径注入到高真空状态的工艺腔室内并进行混合,再向工艺腔室上部的电极加载高频电源,以对腔室内混合的工艺气体进行电离形成等离子体,进而对承载盘上暴露在等离子体环境下的晶圆(Wafer)表面进行刻蚀工艺。Inductive Coupled Plasma (ICP) etching machine is widely used in integrated circuit (integrated circuit, IC) and semiconductor manufacturing process. In the process chamber of plasma etching machine, the intake path of the chamber is divided into Central air intake and edge air intake, different process gases are injected into the process chamber in a high vacuum state through the center air intake and edge air intake paths and mixed, and then high-frequency power is applied to the electrodes on the upper part of the process chamber to control The process gas mixed in the chamber is ionized to form plasma, and then the surface of the wafer (Wafer) exposed to the plasma environment on the carrier plate is etched.
在半导体工艺中,工艺腔室中气体流场分布的均匀性及稳定性对晶圆(Wafer)表面的刻蚀均匀性具有十分重要的影响。因此,为提高气体由边缘进气路径向晶圆四周提供工艺气体的周向速率均匀性,通常在工艺腔室的上盖中加工出用于对工艺气体进行分流的分流通道,工艺气体由分流通道的进气孔进入分流通道中,并由分流通道在上盖上形成的沿周向均匀分布的多个出气口进入工艺腔室中。然而,现有的加工有分流通道的上盖常容易出现漏气、进气均匀性差等问题,且结构维护困难、使用寿命短。因此,如何提供一种能够在保证进气均匀性的同时提高结构整体稳定性及维护性能的边缘进气结构,成为本领域亟待解决的技术问题。In the semiconductor process, the uniformity and stability of the gas flow field distribution in the process chamber has a very important influence on the etching uniformity of the wafer (Wafer) surface. Therefore, in order to improve the circumferential velocity uniformity of the process gas provided by the gas from the edge inlet path to the periphery of the wafer, a shunt channel for shunting the process gas is usually processed in the upper cover of the process chamber, and the process gas is distributed by the shunt. The inlet holes of the channel enter into the distribution channel, and a plurality of gas outlets uniformly distributed along the circumference formed by the distribution channel on the upper cover enter into the process chamber. However, the existing upper cover processed with the shunt channel is often prone to problems such as air leakage and poor air intake uniformity, and the structure is difficult to maintain and has a short service life. Therefore, how to provide an edge air intake structure that can improve the overall stability and maintenance performance of the structure while ensuring the uniformity of the intake air has become a technical problem to be solved urgently in this field.
发明内容Contents of the invention
本发明旨在提供一种半导体工艺设备的边缘进气组件和一种半导体工艺设备,该边缘进气组件能够在保证进气均匀性的同时提高进气结构整体稳定性及维护性能。The present invention aims to provide an edge air intake assembly of semiconductor process equipment and a semiconductor process equipment. The edge air intake assembly can improve the overall stability and maintenance performance of the intake structure while ensuring the uniformity of the intake air.
为实现上述目的,作为本发明的一个方面,提供一种边缘进气组件,用于设置于工艺腔室的顶部开口上,自所述工艺腔室的边缘向所述工艺腔室内通入工艺气体,所述边缘进气组件包括:上环盖、中环盖、下环盖和进气管路,所述上环盖、所述中环盖和所述下环盖叠置于所述工艺腔室上,所述上环盖上设有至少一个进气孔,所述进气孔通过所述进气管路引入所述工艺气体;所述下环盖的内环壁上环绕设有多个喷气孔,所述喷气孔用于向所述工艺腔室内喷出所述工艺气体;In order to achieve the above object, as one aspect of the present invention, an edge gas inlet assembly is provided, which is used to be arranged on the top opening of the process chamber, and process gas is introduced into the process chamber from the edge of the process chamber , the edge air intake assembly includes: an upper ring cover, a middle ring cover, a lower ring cover and an air intake pipeline, the upper ring cover, the middle ring cover and the lower ring cover are stacked on the process chamber, The upper ring cover is provided with at least one air intake hole, and the air intake hole introduces the process gas through the air intake pipeline; the inner ring wall of the lower ring cover is surrounded by a plurality of gas injection holes, so The gas injection hole is used to inject the process gas into the process chamber;
所述上环盖和所述中环盖之间形成有至少一组匀气组合气道,每组所述匀气组合气道分别与一个进气孔和多个所述喷气孔连通,通过所述匀气组合气道将所述进气孔引入的所述工艺气体从多个所述喷气孔中排出。Between the upper ring cover and the middle ring cover is formed at least one set of gas-uniform combined air passages, each group of uniform gas combined air passages communicates with one air intake hole and a plurality of the air injection holes respectively, through the The uniform gas combination gas channel discharges the process gas introduced by the gas inlet holes from the plurality of gas injection holes.
可选地,每组所述匀气组合气道包括:Optionally, each group of the uniform gas combination airway includes:
位于所述上环盖和所述中环盖之间的第一导流槽和多个第二导流槽,所述第一导流槽的进气端与所述进气孔连通,所述第一导流槽具有至少两个排气端,所述第一导流槽的每个排气端对应连接一个所述第二导流槽的进气端,所述第二导流槽用于对流入所述第二导流槽内的气体再次进行分流;A first guide groove and a plurality of second guide grooves located between the upper ring cover and the middle ring cover, the inlet end of the first guide groove communicates with the air inlet hole, and the first guide groove A diversion groove has at least two exhaust ends, and each exhaust end of the first diversion groove is correspondingly connected to an inlet end of the second diversion groove, and the second diversion groove is used for The gas flowing into the second diversion groove is divided again;
每个所述第二导流槽具有至少两个排气端,所述第二导流槽的排气端与所述喷气孔连通。Each of the second guide grooves has at least two exhaust ends, and the exhaust ends of the second guide grooves communicate with the air injection holes.
可选地,所述上环盖的底面上形成有所述第一导流槽,所述中环盖的顶面上形成有多个第二导流槽,所述中环盖中形成有与多个所述第二导流槽一一对应的多个中盖通孔,所述中盖通孔由对应的所述第二导流槽的底部贯穿至所述中环盖的底面,且所述第二导流槽通过所述中盖通孔与所述喷气孔连通。Optionally, the first diversion groove is formed on the bottom surface of the upper ring cover, a plurality of second diversion grooves are formed on the top surface of the middle ring cover, and a plurality of second diversion grooves are formed in the middle ring cover. The second diversion groove corresponds to a plurality of middle cover through holes, and the middle cover through hole penetrates from the bottom of the corresponding second diversion groove to the bottom surface of the middle ring cover, and the second The guide groove communicates with the air injection hole through the through hole of the middle cover.
可选地,所述第一导流槽包括多级沿周向延伸的上弧形槽,同一级所述上弧形槽之间周向间隔设置且长度一致,不同级所述上弧形槽之间径向错开,第一级所述上弧形槽在中点位置与所述进气孔连通,在最后一级以外的所述上弧形槽中,每条所述上弧形槽的两端分别与下一级的两条所述上弧形槽的中点位置连通,最后一级所述上弧形槽的两端与所述第二导流槽连通。Optionally, the first diversion groove includes multiple stages of upper arc-shaped grooves extending in the circumferential direction, the upper arc-shaped grooves of the same stage are arranged at intervals in the circumferential direction and have the same length, and the upper arc-shaped grooves of different stages The upper arc-shaped grooves of the first stage communicate with the air inlet at the midpoint position, and in the upper arc-shaped grooves other than the last stage, each of the upper arc-shaped grooves The two ends communicate with the midpoints of the two upper arc-shaped grooves of the next stage respectively, and the two ends of the upper arc-shaped grooves of the last stage communicate with the second diversion groove.
可选地,所述第二导流槽包括多级沿周向延伸的下弧形槽,同一级所述下弧形槽之间周向间隔设置且长度一致,不同级所述下弧形槽之间径向错开,第一级所述下弧形槽在中点位置与最后一级所述上弧形槽连通,在最后一级以外的所述下弧形槽中,每条所述下弧形槽的两端与下一级的两条所述下弧形槽的中点位置连通,最后一级所述下弧形槽的两端分别与两个所述中盖通孔连通。Optionally, the second guide groove includes multiple stages of lower arc-shaped grooves extending in the circumferential direction, the lower arc-shaped grooves of the same stage are arranged at intervals in the circumferential direction and have the same length, and the lower arc-shaped grooves of different stages radially staggered between them, the lower arc-shaped grooves of the first stage communicate with the upper arc-shaped grooves of the last stage at the midpoint position, and in the lower arc-shaped grooves other than the last stage, each of the lower arc-shaped grooves The two ends of the arc-shaped groove communicate with the midpoint of the two lower arc-shaped grooves of the next stage, and the two ends of the lower arc-shaped groove of the last stage communicate with the two through holes of the middle cover respectively.
可选地,最后一级的每条所述上弧形槽的两端通过两条上连接槽分别与两条第一级所述下弧形槽的中点位置连通。Optionally, both ends of each upper arc-shaped groove of the last stage communicate with midpoints of the two lower arc-shaped grooves of the first stage through two upper connecting grooves.
可选地,所述中环盖的顶面上形成有周向延伸的环形分隔槽,多个所述第二导流槽形成在所述环形分隔槽的底部,所述边缘进气组件还包括环形分隔件,所述环形分隔件匹配设置在所述环形分隔槽中,所述环形分隔件中形成有多个连接通孔,所述第二导流槽通过所述连接通孔与对应的所述第一导流槽连通。Optionally, a circumferentially extending annular separation groove is formed on the top surface of the middle ring cover, and a plurality of second guide grooves are formed at the bottom of the annular separation groove, and the edge air intake assembly further includes an annular A partition, the annular partition is matched in the annular partition groove, a plurality of connecting through holes are formed in the annular partition, and the second diversion groove is connected with the corresponding through connecting through holes. The first diversion groove is connected.
可选地,所述下环盖和中环盖之间形成有环形气道,所述匀气组合气道与所述喷气孔通过所述环形气道彼此连通。Optionally, an annular air channel is formed between the lower ring cover and the middle ring cover, and the combined gas uniform channel and the gas injection holes communicate with each other through the annular air channel.
可选地,所述下环盖的顶面上具有环绕所述下环盖轴线的环形凸起部,且所述环形凸起部的内侧柱面与所述下环盖的内壁相平,所述中环盖的底面上形成有环形凹槽,所述下环盖的顶面与所述中环盖的底面接触,所述环形凸起部对应设置在所述环形凹槽中,且所述环形凸起部的顶部与所述环形凹槽的槽底接触,所述环形凸起部的外侧柱面与所述环形凹槽的侧壁之间形成所述环形气道。Optionally, the top surface of the lower ring cover has an annular protrusion surrounding the axis of the lower ring cover, and the inner cylindrical surface of the annular protrusion is flat with the inner wall of the lower ring cover, so An annular groove is formed on the bottom surface of the middle ring cover, the top surface of the lower ring cover is in contact with the bottom surface of the middle ring cover, the annular protrusion is correspondingly arranged in the annular groove, and the annular protrusion The top of the raised portion is in contact with the groove bottom of the annular groove, and the annular air channel is formed between the outer cylindrical surface of the annular protrusion and the side wall of the annular groove.
可选地,所述上环盖、所述中环盖和所述下环盖均为矩形,所述上环盖的四个端角上分别设有一个所述进气孔,所述匀气组合气道为四组,所述匀气组合气道和所述进气孔一一对应设置。Optionally, the upper ring cover, the middle ring cover and the lower ring cover are all rectangular, and the four end corners of the upper ring cover are respectively provided with one of the air inlet holes, and the gas uniform combination There are four groups of air passages, and the air uniformity combined air passages and the air intake holes are provided in one-to-one correspondence.
可选地,所述进气管路包括进气总管、分流盒和多根进气支管,所述进气总管的第一端用于由气源接收工艺气体,所述进气总管的第二端通过所述分流盒与至少一根所述进气支管的第一端连通,所述进气支管的第二端与所述进气孔一一对应连通。Optionally, the air intake pipeline includes an air intake main pipe, a distribution box and a plurality of air intake branch pipes, the first end of the air intake main pipe is used to receive process gas from a gas source, and the second end of the air intake main pipe The distribution box communicates with the first end of at least one intake branch pipe, and the second end of the intake branch pipe communicates with the intake holes one by one.
作为本发明的第二个方面,提供一种半导体工艺设备,所述半导体工艺设备包括工艺腔室、边缘进气组件和承载盘,所述承载盘设置于所述工艺腔室内,所述边缘进气组件设置于所述工艺腔室的顶部开口处,其中,所述边缘进气组件为前面所述的边缘进气组件。As a second aspect of the present invention, a semiconductor process equipment is provided, the semiconductor process equipment includes a process chamber, an edge inlet assembly and a carrier plate, the carrier plate is arranged in the process chamber, and the edge inlet The gas assembly is arranged at the top opening of the process chamber, wherein the edge air intake assembly is the above-mentioned edge air intake assembly.
在本发明提供的边缘进气组件和半导体工艺设备中,上环盖和中环盖之间形成有至少一组匀气组合气道,每组匀气组合气道均能够将一个进气孔引入的工艺气体分流至多个喷气孔并喷出,从而通过下环盖均匀地喷射至承载盘上方空间的边缘区域。该匀气组合气道位于上环盖和中环盖之间,从而仅需使上环盖与中环盖的相对表面贴合并进行固定即可组装该匀气组合气道,组装过程中不存在化学或物理反应,与现有技术中焊接多层子通道的方案相比,提高了结构整体的稳定性及气体通路的截面均匀性,可以进一步保证下环盖喷射工艺气体的均匀性。In the edge air intake assembly and the semiconductor process equipment provided by the present invention, at least one group of uniform gas combination air passages is formed between the upper ring cover and the middle ring cover, and each group of uniform gas combination air passages can introduce an air intake hole into the The process gas is divided into multiple gas injection holes and sprayed out, so as to be evenly sprayed to the edge area of the space above the carrier plate through the lower ring cover. The gas-uniform combination air channel is located between the upper ring cover and the middle ring cover, so that only the opposite surfaces of the upper ring cover and the middle ring cover need to be attached and fixed to assemble the gas-distribution combined air channel, and there is no chemical or Compared with the solution of welding multi-layer sub-channels in the prior art, the physical reaction improves the stability of the overall structure and the uniformity of the cross-section of the gas passage, and can further ensure the uniformity of the injection process gas of the lower ring cover.
并且,在通过密封件(如,密封圈)对匀气组合气道进行密封时,密封件仅需对上环盖的底面与中环盖的顶面之间的缝隙进行密封,在上盖拆装过程中,密封件仅受对侧平面的挤压作用,不会在挤压状态下与其他结构之间发生摩擦而承受剪切力,提高了上盖密封、拆装的便捷性,延长了上盖中密封件的使用寿命。And, when sealing the uniform gas combination air passage through the sealing member (such as a sealing ring), the sealing member only needs to seal the gap between the bottom surface of the upper ring cover and the top surface of the middle ring cover, and then disassemble and assemble the upper cover. During the process, the seal is only squeezed by the opposite side plane, and will not be subjected to shear force due to friction with other structures in the squeezed state, which improves the convenience of sealing and disassembling the upper cover, and extends the length of the upper cover. The service life of the seal in the cover.
此外,在匀气组合气道中积有颗粒物等需除去的物质时,仅需将上环盖、中环盖和下环盖拆开,即可将匀气组合气道对应于上环盖的底面或中环盖的顶面上的凹槽结构直接暴露在外,以便于对这些凹槽结构进行清洁,提高了维护整体结构的便捷性。In addition, when particles and other substances that need to be removed accumulate in the combined air passage of the uniform gas, it is only necessary to disassemble the upper ring cover, the middle ring cover and the lower ring cover, and the combined air passage of the uniform gas can be corresponding to the bottom surface of the upper ring cover or The groove structures on the top surface of the middle ring cover are directly exposed to the outside, so as to facilitate cleaning of these groove structures and improve the convenience of maintaining the overall structure.
附图说明Description of drawings
附图是用来提供对本发明的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本发明,但并不构成对本发明的限制。在附图中:The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the description, together with the following specific embodiments, are used to explain the present invention, but do not constitute a limitation to the present invention. In the attached picture:
图1是本发明实施例提供的边缘进气组件的斜向俯视图;Fig. 1 is an oblique top view of an edge intake assembly provided by an embodiment of the present invention;
图2是本发明实施例提供的边缘进气组件的斜向仰视图;Fig. 2 is an oblique bottom view of the edge air intake assembly provided by the embodiment of the present invention;
图3是图1中边缘进气组件在α平面的剖视图;Fig. 3 is a cross-sectional view of the edge air intake assembly in Fig. 1 on the α plane;
图4是图1中边缘进气组件在β平面的剖视图;Fig. 4 is a cross-sectional view of the edge air intake assembly in Fig. 1 on the β plane;
图5是本发明实施例提供的边缘进气组件的俯视图;Fig. 5 is a top view of an edge intake assembly provided by an embodiment of the present invention;
图6是本发明实施例提供的边缘进气组件的仰视图;Fig. 6 is a bottom view of the edge intake assembly provided by the embodiment of the present invention;
图7是本发明实施例提供的边缘进气组件中分流盒与进气支管之间的连接关系示意图;Fig. 7 is a schematic diagram of the connection relationship between the splitter box and the intake branch pipe in the edge intake assembly provided by the embodiment of the present invention;
图8是本发明实施例提供的边缘进气组件中分流盒的剖视图;Fig. 8 is a cross-sectional view of a splitter box in an edge air intake assembly provided by an embodiment of the present invention;
图9是本发明实施例提供的边缘进气组件中上环盖的底面结构示意图;Fig. 9 is a schematic diagram of the bottom surface structure of the upper ring cover in the edge air intake assembly provided by the embodiment of the present invention;
图10是本发明实施例提供的边缘进气组件中中环盖的顶面结构示意图;Fig. 10 is a schematic diagram of the top surface structure of the middle ring cover in the edge air intake assembly provided by the embodiment of the present invention;
图11是本发明实施例提供的边缘进气组件中的气路局部放大示意图;Fig. 11 is a partially enlarged schematic diagram of the gas path in the edge air intake assembly provided by the embodiment of the present invention;
图12是本发明实施例提供的边缘进气组件中的气路示意图;Fig. 12 is a schematic diagram of the air path in the edge air intake assembly provided by the embodiment of the present invention;
图13是现有技术中一种匀气组合气道的气路结构示意图;Fig. 13 is a schematic diagram of the gas path structure of a uniform gas combination air channel in the prior art;
图14是现有技术中另一种匀气组合气道的气路结构示意图。Fig. 14 is a schematic view of the gas path structure of another gas uniform combined air channel in the prior art.
具体实施方式Detailed ways
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
在现有的上盖结构中,分流通道通常包括多层结构和单层结构两种形式。其中,多层结构的分流通道包括沿厚度方向层叠设置在上盖中且环绕工艺腔室轴线布置的多层气道,每层中的每一气道均通过垂直的连接通道与下一层中的多个气道连接,进而实现气流在由上层向下层流动时分岔,最下层的多个气道在上盖上形成周向均匀间隔分布的多个出气口,以实现均匀进气。In the existing upper cover structure, the shunt channel generally includes two forms: a multi-layer structure and a single-layer structure. Wherein, the distribution channels of the multi-layer structure include multi-layer gas channels stacked in the upper cover along the thickness direction and arranged around the axis of the process chamber. A plurality of air passages are connected to realize the bifurcation of the air flow when flowing from the upper layer to the lower layer, and the plurality of air passages in the lowermost layer form a plurality of air outlets evenly distributed in the circumferential direction on the upper cover to achieve uniform air intake.
具体地,如图13所示,上盖包括底座1和设置在底座1中的阶梯状环形导流槽中的多个环形隔板,图中为分出三层气道的情况(上盖为环状结构,图中所示为上盖某一周向位置的横截面)。下层环形隔板4、中层环形隔板3以及上层环形隔板2依次通过焊接的方式固定在阶梯状环形导流槽中,并将该阶梯状环形导流槽分为上层气道5、中层气道6和下层气道7。每一环形隔板上均形成有多个沿厚度方向贯穿环形隔板的通孔(即形成垂直的连接通道),工艺气体依次流经上、中、下三层气道,并在由上一气道流动至下一气道时分流,最后由下层气道7流动至多个出气口8并流入工艺腔室内。Specifically, as shown in Figure 13, the upper cover includes a
单层结构的分流通道包括在上盖中形成的环绕工艺腔室轴线且同心同层设置的多圈子通道,外圈的每个子通道通过径向延伸的连接通道与内圈的多个子通道连通,进而实现气流在由外圈向内圈流动时分岔,最内圈的多个子通道在上盖上形成周向均匀间隔分布的多个出气口,以实现均匀进气。The distribution channels of the single-layer structure include multi-circle sub-channels formed in the upper cover around the axis of the process chamber and concentrically arranged on the same layer. Each sub-channel of the outer ring communicates with multiple sub-channels of the inner ring through a radially extending connecting channel. Furthermore, the air flow is bifurcated when flowing from the outer ring to the inner ring, and the plurality of sub-channels in the innermost ring form a plurality of air outlets evenly distributed in the circumferential direction on the upper cover to achieve uniform air intake.
具体地,如图14所示,上盖包括上盖板10和底座20,其中上盖板10为环形的T型横截面结构,在上盖板10的内外两侧壁上形成有燕尾形密封槽,两燕尾形密封槽中可分别设置外侧O型密封圈(O-Ring)30和内侧O型密封圈40,以通过径向密封的方式实现气道匀流区的密封(上盖为环状结构,图中所示为上盖某一周向位置的横截面)。盖板10部分插入径向密封区并对气道匀流区中的多圈子通道的顶部进行密封,使多圈子通道之间仅通过径向延伸的连接通道连通。Specifically, as shown in FIG. 14, the upper cover includes an
然而,在多层结构的分流通道中,为保证气密性,环形隔板的边缘需与分流通道的内壁连续满焊连接,其焊接形变量较大,难以保证通道尺寸精度,气道截面形状变形严重不规则,严重影响边缘进气的均匀性,且进气孔与出气口的气密性受形变影响,有较大的漏气风险,同时焊接工艺过程复杂繁琐,焊接工装多,造成制造周期长、加工成本高,且在通道长期使用后沉积有颗粒物,需要清洁维护时,整体焊接成型的通道结构无法打开,需定期报废更换,维护成本高、使用寿命短。However, in the multi-layer structure of the distribution channel, in order to ensure airtightness, the edge of the annular partition needs to be connected with the inner wall of the distribution channel by continuous full welding. The welding deformation is large, and it is difficult to ensure the dimensional accuracy of the channel. The deformation is seriously irregular, which seriously affects the uniformity of the edge air intake, and the airtightness of the air intake hole and the air outlet is affected by the deformation, and there is a greater risk of air leakage. At the same time, the welding process is complicated and cumbersome, and there are many welding tools, resulting The cycle is long, the processing cost is high, and particles are deposited after the channel is used for a long time. When cleaning and maintenance are required, the integrally welded channel structure cannot be opened, and it needs to be scrapped and replaced regularly. The maintenance cost is high and the service life is short.
而在单层结构的分流通道中,为保证气密性,通常需采用螺栓等结构固定上盖板10,将上盖板10的底部紧紧按压在通道结构中,安装过程中极易剪切、挤压密封圈等弹性件,且密封圈背向子通道的一侧长期暴露在腔内的工艺气体中,易造成密封圈表面受腐蚀并粘结在通道侧壁上,拆除过程中需要依靠顶丝拆下上盖板10,使得上盖板10拆卸困难,并且,受上盖的大小限制,单层结构的分流通道中子通道的圈数有限(现有技术中最多仅能均布8个边缘出气口),难以满足日益增长的进气均匀性要求。In the single-layer structure of the distribution channel, in order to ensure airtightness, it is usually necessary to fix the
为解决上述技术问题,作为本发明的一个方面,提供一种边缘进气组件,用于设置在半导体工艺设备的顶部开口上,自工艺腔室的边缘向工艺腔室内通入工艺气体。如图1至图6所示,边缘进气组件包括上环盖100、中环盖200、下环盖300和进气管路,上环盖100、中环盖200和下环盖300叠置于工艺腔室上,上环盖100上设有至少一个进气孔,进气孔通过进气管路引入工艺气体;下环盖的内环壁上环绕设有多个喷气孔,喷气孔用于向工艺腔室内喷出工艺气体。In order to solve the above-mentioned technical problems, as one aspect of the present invention, an edge gas inlet assembly is provided, which is used to be arranged on the top opening of a semiconductor process equipment, and to feed process gas into the process chamber from the edge of the process chamber. As shown in Figures 1 to 6, the edge air intake assembly includes an
上环盖100和中环盖200之间形成有至少一组匀气组合气道(气道结构位于上环盖100的底面和/或中环盖200的顶面上),每组匀气组合气道分别与一个进气孔和多个喷气孔连通,以通过匀气组合气道将进气孔引入的工艺气体从多个喷气孔中排出至工艺腔室内。Between the
需要说明的是,环盖设计是为了安装介质窗,具体地,如图1、图2所示,上环盖100、中环盖200和下环盖300同轴设置,从而在介质窗700(可以为石英材料)安装在上环盖100上后,上环盖100、中环盖200、介质窗700、和下环盖300共同组成工艺腔室的上盖,该上盖密封安装在工艺腔室顶部后,可通过在介质窗700上方馈入射频,以将工艺腔室内注入的工艺气体启辉形成等离子体。It should be noted that the ring cover is designed to install the medium window. Specifically, as shown in FIG. 1 and FIG. After being installed on the
为提高各喷气孔向工艺腔室中排出工艺气体的气流方向的准确性,作为本发明的一种优选实施方式,如图1至图6所示,边缘进气组件还包括多个喷嘴400,多个喷嘴400一一对应地与多个喷气孔连接,匀气组合气道中的工艺气体通过多个喷嘴400排出至工艺腔室内。In order to improve the accuracy of the flow direction of the process gas discharged from each gas injection hole into the process chamber, as a preferred embodiment of the present invention, as shown in Figures 1 to 6, the edge air intake assembly also includes a plurality of
本发明实施例对喷嘴400的型号及数量不作具体限定,例如,可选地,喷嘴400可以为8英寸喷嘴,如图12所示,64个喷嘴400在下环盖300的内壁上周向等间隔设置。The embodiment of the present invention does not specifically limit the type and quantity of the
在本发明中,上环盖100和中环盖200之间形成有至少一组匀气组合气道,每组匀气组合气道均能够将一个进气孔引入的工艺气体分流至多个喷气孔并喷出,从而通过下环盖300均匀地喷射至承载盘上方空间的边缘区域(即实现均匀的边缘进气)。该匀气组合气道位于上环盖100和中环盖200之间,从而仅需使上环盖100与中环盖200的相对表面贴合并进行固定即可组装该匀气组合气道,组装过程中不存在化学或物理反应,与现有技术中焊接多层子通道的方案相比,提高了结构整体的稳定性及气体通路的截面均匀性,可以进一步保证下环盖300喷射工艺气体的均匀性。In the present invention, at least one group of uniform gas combination gas passages is formed between the
并且,在通过密封件(如,密封圈)对匀气组合气道进行密封时,密封件仅需对上环盖100的底面与中环盖200的顶面之间的缝隙进行密封,在上盖拆装过程中,密封件仅受对侧平面的挤压作用,不会在挤压状态下与其他结构之间发生摩擦而承受剪切力,提高了上盖密封、拆装的便捷性,延长了上盖中密封件的使用寿命。And, when sealing the uniform gas combined air passage by the sealing member (such as a sealing ring), the sealing member only needs to seal the gap between the bottom surface of the
此外,在匀气组合气道中积有颗粒物等需除去的物质时,仅需将上环盖100、中环盖200和下环盖300拆开,即可将匀气组合气道对应于上环盖100的底面或中环盖200的顶面上的凹槽结构直接暴露在外,以便于对这些凹槽结构进行清洁,提高了维护整体结构的便捷性。In addition, when particles and other substances that need to be removed accumulate in the combined air channel of the uniform gas, it is only necessary to disassemble the
作为本发明的一种可选实施方式,匀气组合气道可包括至少两极分流凹槽结构,具体地,如图3、图4所示,每组匀气组合气道包括:位于上环盖100和中环盖200之间的第一导流槽110和多个第二导流槽210,第一导流槽110的进气端与进气孔连通,第一导流槽110具有至少两个排气端,第一导流槽110的每个排气端对应连接一个第二导流槽210的进气端,第二导流槽210用于对流入第二导流槽210的气体再次进行分流。每个第二导流槽210具有至少两个排气端,第二导流槽210的排气端与喷气孔连通。As an optional embodiment of the present invention, the gas-homogenizing combined air channel may include at least two pole-dividing groove structures. Specifically, as shown in Fig. 3 and Fig. 4, each group of gas-homogenizing combined air channel includes: The
为提高上环盖100与中环盖200壁厚的利用率,作为本发明的一种优选实施方式,第一导流槽110和第二导流槽210可分别形成在两环盖的两相对表面上,具体地:In order to improve the utilization rate of the wall thickness of the
如图3、图4所示,上环盖100的底面上形成有第一导流槽110,中环盖200的顶面上形成有多个第二导流槽210,中环盖200中形成有与多个第二导流槽210一一对应的多个中盖通孔220,中盖通孔220由对应的第二导流槽210的底部贯穿至中环盖200的底面,且第二导流槽210通过中盖通孔220与喷气孔连通。As shown in Fig. 3 and Fig. 4, a
在本发明实施例中,上环盖100底面上的每个第一导流槽110与中环盖200顶面上的多个第二导流槽210连通,每一第一导流槽110中的工艺气体可分流至多个第二导流槽210中,每一第二导流槽210中的工艺气体可分流至多个中盖通孔220中。从而在工艺气体通过上环盖100上的进气孔进入第一导流槽110后,可经过至少两次分流作用并均匀地通过多个中盖通孔220流动至下环盖300,进而通过下环盖300均匀地喷射至承载盘上方空间的边缘区域(即实现均匀的边缘进气)。并且,每一侧表面上的凹槽结构的开口均可由对侧贴合的表面封闭,并配合密封件进行密封,即,第一导流槽110由中环盖200的顶面封住,第二导流槽210由上环盖100的底面封住,因此在本发明的一些实施例中,第一导流槽110与第二导流槽210的设置区域可以重叠,从而在同等壁厚条件下容纳更多级分流结构,提高上环盖100与中环盖200壁厚的利用率(在第一导流槽110或第二导流槽210为多级分流结构的情况下,上环盖100与中环盖200上均可设置多级分流结构,从而分流级数可超过单个表面上容纳的最高分流级数)。In the embodiment of the present invention, each
本发明实施例对第一导流槽110如何与上环盖100上的进气孔连接不作具体限定,例如,第一导流槽110可延伸至上环盖100底面的边缘并形成进气孔,或者进气孔在上环盖100内部延伸,以将第一导流槽110与上环盖100侧壁上的开口连通。The embodiment of the present invention does not specifically limit how the
为进一步提高匀气组合气道的气密性,优选地,如图1至图4所示,进气孔120直接沿厚度方向贯穿上环盖100,其一端与第一导流槽110对应的至少一个进气孔120,另一端在上环盖100的顶面上形成开口,进气管路向上环盖100的顶面上的进气孔开口提供工艺气体。In order to further improve the airtightness of the combined gas uniform air channel, preferably, as shown in Figures 1 to 4, the air inlet 120 directly penetrates the
在本发明实施例中,每个第一导流槽110均通过对应的进气孔120与上环盖100顶面上的开口连通,从而可以避免上环盖100底面上的凹槽图案延伸至上环盖100的边缘,进而在对匀气组合气道进行密封时,可直接在中环盖200的顶面与上环盖100的底面之间设置环绕凹槽图案所在区域的密封件(如,O型密封圈),提高了匀气组合气道的气密性。并且,导流槽通过沿高度方向延伸的进气孔120和中盖通孔220与其他空间连通,从而在对边缘进气组件进行维护时,可以方便、快捷地对组成匀气组合气道的凹槽和孔洞结构进行清洁,提高了边缘进气组件的维护性能。In the embodiment of the present invention, each
为进一步提高多个喷气孔向工艺腔室中喷射工艺气体的均匀性,优选地,如图3、图4所示,下环盖300和中环盖200之间形成有环形气道320,匀气组合气道与喷气孔通过环形气道320彼此连通。In order to further improve the uniformity of injecting process gas into the process chamber by multiple gas injection holes, preferably, as shown in Fig. The combined air channel and the jet holes communicate with each other through the
在本发明实施例中,下环盖300与中环盖200之间形成有环形气道320,从而在气源向匀气组合气道中提供工艺气体时,工艺气体经多次分流后,先由匀气组合气道均匀注入环形气道320中,再通过下环盖300上的多个喷气孔均匀进入工艺腔室,从而在工艺气体进入喷气孔前对工艺气体在不同区域之间气压进行平衡,进一步提高多个喷气孔向工艺腔室中喷射工艺气体的均匀性。In the embodiment of the present invention, an
作为本发明的一种可选实施方式,如图3、图4所示,下环盖300的顶面上具有环绕下环盖300轴线的环形凸起部310,且环形凸起部310的内侧柱面与下环盖300的内壁相平,中环盖200的底面上形成有环形凹槽,环形凸起部310对应设置在环形凹槽中,且环形凸起部310的顶部与环形凹槽的槽底接触,环形凸起部310的外侧柱面与环形凹槽的侧壁之间形成环形气道320。在中环盖中形成有多个中盖通孔220的情况下,第二导流槽210通过多个中盖通孔220与环形气道320连通。As an optional embodiment of the present invention, as shown in Fig. 3 and Fig. 4, the top surface of the
在本发明实施例中,下环盖300的顶面上具有沿下环盖300内壁向上凸起的环形凸起部310,喷嘴400一一对应地安装在沿径向贯穿环形凸起部310的多个安装孔中,在气源向匀气组合气道中提供工艺气体时,工艺气体经多次分流后,由第二导流槽210流入中盖通孔220并注入环形气道320中,再由环形气道320流入多个喷气孔并喷射至工艺腔室,从而在工艺气体进入喷气孔前对工艺气体在不同区域之间气压进行平衡,进一步提高多个喷气孔向工艺腔室中喷射工艺气体的均匀性。In the embodiment of the present invention, the top surface of the
为进一步提高多个喷嘴400向工艺腔室中喷射工艺气体的均匀性,优选地,如图9、图10所示,第一导流槽110与多个第二导流槽210的多个连通位置(连通位置A至H)绕中环盖200的轴线周向等间隔设置,多个中盖通孔220绕中环盖200的轴线周向等间隔设置;连通位置与对应的进气孔120沿对应的第一导流槽110的最短连通路径的长度相同,且多个中盖通孔220与对应的连通位置沿对应的第二导流槽210的最短连通路径的长度相同。In order to further improve the uniformity of injecting process gas from
在本发明实施例中,多个连通位置和多个中盖通孔220均周向等间隔设置,且多个连通位置与对应的进气孔120之间的最短路径相同、多个中盖通孔220与对应的连通位置之间的最短路径也相同,从而周向等间隔设置的中盖通孔220与对应的进气孔120之间的最短气流路径长度也相同,即气流由进气孔流向各个角度的中盖通孔220并通过下环盖300流入工艺腔室中的路径长度相同,从而进一步保证了下环盖300向工艺腔室中喷射工艺气体的均匀性。In the embodiment of the present invention, the plurality of communication positions and the plurality of middle cover through
本发明实施例对上环盖100、中环盖200和下环盖300横截面的外轮廓不作具体限定,例如,为便于设置进气孔120以及对环盖之间进行装配,优选地,上环盖100、中环盖200和下环盖300(的外轮廓)均为矩形(或近似矩形,即在矩形的四角对应的环盖棱线进行圆角或倒角处理),上环盖100的四个端角上分别设有一个进气孔120,匀气组合气道为四组,匀气组合气道和进气孔120一一对应设置。The embodiment of the present invention does not specifically limit the outer contours of the cross-sections of the
在本发明实施例中,进气孔120设置在四角区域,从而可以增大周向设置的第一导流槽110和第二导流槽210的可设置区域。并且,当上环盖100、中环盖200和下环盖300采用螺栓进行装配时,如图9和图10所示,螺栓孔可设置在四角区域(近似矩形轮廓的四角对应位置的四个圆孔),并且,装配所需的销孔也可设置在该四角区域(在装配螺栓前先将圆柱销依次穿过多个环盖中对应位置的销孔,以确保多个环盖的螺栓孔之间对齐)。In the embodiment of the present invention, the air intake holes 120 are arranged in the four corners, so that the area where the first
本发明实施例对如何实现第一导流槽110和第二导流槽210的多个连通位置与对应的进气孔120之间的最短路径相同不作具体限定,例如,可选地,第一导流槽110包括多级沿周向延伸的上弧形槽,同一级上弧形槽之间周向间隔设置且长度一致,不同级上弧形槽之间径向错开,第一级上弧形槽在中点位置与进气孔120连通,在最后一级以外的上弧形槽中,每条上弧形槽的两端分别(通过两条上连接槽101)与下一级的两条上弧形槽的中点位置连通,最后一级上弧形槽的两端与第二导流槽210连通。The embodiment of the present invention does not specifically limit how to realize the same shortest path between multiple communication positions of the
即,每一级上弧形槽均由弧形的中点位置接收工艺气体,并通过槽的两端向下一级的两条上弧形槽(或两个第二导流槽210)注入工艺气体,从而工艺气体每流过一级上弧形槽则支流数翻一倍,由最后一级上弧形槽流入第二导流槽210时,工艺气体的总支路数量为进气孔120的数量乘2的上弧形槽级数次方(也即第二导流槽210的数量)。That is, the arc-shaped slots on each level receive the process gas from the midpoint of the arc, and inject the gas into the two upper arc-shaped slots (or two second diversion slots 210 ) of the next level through the two ends of the slots. process gas, so that the number of branches of the process gas is doubled every time the process gas flows through the upper arc-shaped groove of the first stage. The number of 120 is multiplied by 2 to the power of the series of the upper arc grooves (that is, the number of the second diversion grooves 210 ).
同样地,第二导流槽210也可包括多级沿周向延伸的下弧形槽(如图11所示,第一级下弧形槽211和第二级下弧形槽212),同一级下弧形槽之间周向间隔设置且长度一致,不同级下弧形槽之间径向错开,第一级下弧形槽在中点位置与最后一级上弧形槽连通,在最后一级以外的下弧形槽中,每条下弧形槽的两端分别(通过两条下连接槽201)与下一级的两条下弧形槽的中点位置连通,最后一级下弧形槽的两端分别与两个中盖通孔220连通。Similarly, the
即,每一级下弧形槽均由弧形的中点位置接收工艺气体,并通过槽的两端向下一级的两条下弧形槽(或两个中盖通孔220)注入工艺气体,工艺气体每流过一级下弧形槽则支流数翻一倍,由最后一级下弧形槽流入中盖通孔220时,工艺气体的总支路数量为第二导流槽210的数量乘2的下弧形槽级数次方(也即中盖通孔220的数量)。That is, the lower arc-shaped grooves of each stage receive the process gas from the midpoint of the arc, and inject the process gas into the two lower arc-shaped grooves (or two middle cover through holes 220) of the next stage through the two ends of the grooves. For gas, the number of branches of the process gas is doubled every time the process gas flows through the lower arc-shaped groove of the first stage. The number multiplied by 2 to the power of the lower arc groove series (that is, the number of through
本发明实施例对上连接槽101和下连接槽201的延伸方向不作具体限定,例如,作为本发明的一种可选实施方式,上连接槽101和下连接槽201可沿径向延伸。The embodiment of the present invention does not specifically limit the extending direction of the upper connecting
在进气孔120设置在四角区域的情况下,作为本发明的一种优选实施方式,上级的上弧形槽半径大于下级的上弧形槽半径,上级的下弧形槽半径大于下级的下弧形槽半径,从而在保持进气孔120为垂直延伸的孔洞(方便清洁)的同时,合理利用了上环盖100和中环盖200壁厚,在同等壁厚条件下可设置更多级上弧形槽和下弧形槽,进一步提高进气均匀性。In the case that the air intake hole 120 is arranged in the four-corner area, as a preferred embodiment of the present invention, the radius of the upper arc-shaped groove of the upper stage is greater than the radius of the upper arc-shaped groove of the lower stage, and the radius of the lower arc-shaped groove of the upper stage is larger than that of the lower stage. The radius of the arc groove, so that while keeping the air inlet 120 as a vertically extending hole (convenient for cleaning), the wall thickness of the
本发明实施例对第一导流槽110和第二导流槽210中弧形槽的数量不作具体限定,例如,在本发明的一些实施例中,第一导流槽110和第二导流槽210可以仅包括一级弧形槽。The embodiment of the present invention does not specifically limit the number of arc-shaped grooves in the first
例如,作为本发明的一种可选实施方式,第一导流槽110仅包括一级上弧形槽,具体地,如图11所示,第二导流槽210包括多级沿周向延伸的下弧形槽(第一级下弧形槽211和第二级下弧形槽212),同一级下弧形槽之间周向间隔设置且长度一致,不同级下弧形槽之间径向错开,第一级下弧形槽在中点位置与第一导流槽110连通,在最后一级以外的下弧形槽中,每条下弧形槽的两端分别通过两条下连接槽201与下一级的两条下弧形槽的中点位置连通,最后一级下弧形槽的两端分别与两个中盖通孔220连通。For example, as an optional embodiment of the present invention, the first
第一导流槽110包括沿周向延伸的上弧形槽111,上弧形槽111在中点位置与进气孔120连通,上弧形槽111的两端分别与两条第一级下弧形槽211连通。The
作为本发明的另一种可选实施方式,第一导流槽110仅包括一级上弧形槽,第二导流槽210包括两级下弧形槽,具体地,如图11所示,第二导流槽210包括多个第一级下弧形槽211和多个第二级下弧形槽212,多个第一级下弧形槽211之间周向间隔设置且长度一致,多个第二级下弧形槽212之间周向间隔设置且长度一致。第一级下弧形槽211与第二级下弧形槽212之间沿径向错开,第一级下弧形槽211在中点位置与上环盖底面上对应的第一导流槽110连通,且在两端通过两条下连接槽201与两条第二级下弧形槽212的中点位置连通。第二级下弧形槽212的两端分别与两个中盖通孔220连通。As another optional embodiment of the present invention, the
本发明实施例对第一导流槽110如何与对应的第二导流槽210连通不作具体限定,例如,在本发明的一些实施例中,第一导流槽110在上环盖100底面上的投影与第二导流槽210的投影部分错开,仅在连通位置重叠。例如,如图11、图12所示,最后一级的每条上弧形槽111的两端分别通过两条上连接槽101与第二导流槽210连通,且与最后一级上弧形槽111的两端连接的两条上连接槽101与第二导流槽210在上环盖100底面上的投影在连通位置重叠(图中未示出上环盖100,仅展示上环盖100中的进气孔120以及底部的凹槽图案)。即,第一导流槽110中的上弧形槽均与第二导流槽210中的下弧形槽径向错开,从而仅在上连接槽101与第二导流槽210投影重叠的连通位置相互连通。The embodiment of the present invention does not specifically limit how the
为提高弧形槽之间的气密性,进一步保证进气均匀性,优选地,如图10至图12所示,最后一级的每条上弧形槽的两端分别与两条第一级下弧形槽的中点位置对应,中环盖200的顶面上还形成有周向延伸的环形分隔槽230,多个第二导流槽210形成在环形分隔槽230的底部,边缘进气组件还包括环形分隔件240,环形分隔件240匹配设置在环形分隔槽230中,环形分隔件240中形成有位于多个连通位置的多个连接通孔,第二导流槽210通过连接通孔与对应的第一导流槽110连通。In order to improve the airtightness between the arc-shaped grooves and further ensure the uniformity of air intake, preferably, as shown in Figure 10 to Figure 12, the two ends of each upper arc-shaped groove in the last stage are respectively connected with the two first Corresponding to the midpoint position of the lower arc groove, a circumferentially extending
需要说明的是,环形分隔件240优选为弹性件,从而在上环盖100的底面与中环盖200的顶面压合后,环形分隔件240可在弹力作用下更紧密地对弧形槽进行密封。在本发明实施例中,通过环形分隔件240对第二导流槽210进行覆盖,第二导流槽210通过连接通孔与对应的第一导流槽110连通,从而进一步提高了第二导流槽210中下弧形槽之间的气密性。It should be noted that the
并且,在设置有环形分隔件240的情况下,优选地,如图9、图10所示,第一导流槽110中上弧形槽的设置区域可以与第二导流槽210中下弧形槽的设置区域重合(即上下弧形槽在上环盖底面上的投影所在区域可以重叠),从而进一步提高上环盖100与中环盖200壁厚的利用率,在同等壁厚条件下容纳更多级弧形槽(同等壁厚条件下,上弧形槽与下弧形槽设置区域重叠的方案中弧形槽总级数上限可以为上弧形槽与下弧形槽径向错开方案中弧形槽总级数上限的两倍)。And, in the case where the
此外,环形分隔件240可同时对上弧形槽和下弧形槽进行密封,从而进一步提高了匀气组合气道的气密性,保证了进气均匀性。In addition, the
为进一步提高进气均匀性,优选地,如图1至图12所示,进气管路包括进气总管510、分流盒520和多根进气支管530,进气总管510的第一端用于由气源接收工艺气体,进气总管510的第二端通过分流盒520与至少一根进气支管530的第一端连通,进气支管530的第二端与进气孔一一对应连通。In order to further improve the uniformity of intake air, preferably, as shown in FIGS. The process gas is received from the gas source, and the second end of the
在本发明实施例中,进气管路中进气总管510通过分流盒520与多根进气支管530连接,即在工艺气体进入上环盖100前先将其分流成多股,从而进一步增加了工艺气体的分流次数,进一步提高了进气均匀性。In the embodiment of the present invention, the intake
为进一步提高进气均匀性,优选地,如图7、图8所示,进气总管510的第一端穿过分流盒520的顶壁与分流盒520的内部连通,分流盒520的侧壁沿进气总管510第一端径向的截面轮廓为正多边形(或在存在倒角、圆角情况下为近似正多边形),且进气总管510第一端的轴线穿过正多边形的几何中心,多根进气支管530的第一端穿过侧壁并与分流盒520的内部连通,且多根进气支管530的第一端在侧壁上的连接位置与正多边形的多条边一一对应。In order to further improve the uniformity of air intake, preferably, as shown in Figure 7 and Figure 8, the first end of the
为便于组装进气管路,优选地,进气总管510和进气支管530用于与分流盒520连接的一端均为分离式设计,如图1、如图7、图8所示,进气总管510和进气支管530均包括两段分离的管道,其中一根管道的一端与分流盒520连通(即图7、图8中所示的管道),另一端通过气路接头与另一根管道连接,本发明实施例对气路接头的型号不作具体限定,例如,该气路接头可以为1/4英寸气路接头。另一根管道的一端与上环盖100顶面上的进气孔通过O型密封圈(O-Ring)密封连接。In order to facilitate the assembly of the intake pipeline, preferably, the end of the
在本发明实施例中,进气总管510由分流盒520的顶壁接入分流盒520的腔体中,多根进气支管530由分流盒520的侧壁接入腔体,且多个侧壁与进气总管510第一端之间的距离相等,从而在工艺气体由进气总管510的第二端沿进气总管510流入分流盒520中后,可沿多个不同方向均匀地流入多根进气支管530中,进而均匀地分流至多个进气孔120中,进一步提高了进气均匀性。In the embodiment of the present invention, the intake
本发明实施例对分流盒520的结构不作具体限定,例如,可选地,分流盒520包括顶盖521和盒体522,顶盖521用于密封盒体522顶部的开口,顶盖521形成为分流盒520的顶壁,盒体522的侧壁形成为分流盒520的侧壁。为保证分流盒520的气密性,优选地,如图8所示,密封盒体522的顶部表面形成有环绕开口的顶盖密封槽,顶盖密封槽中设置有环形密封件(例如,可以是O型密封圈)。The embodiment of the present invention does not specifically limit the structure of the
为保证上盖中流体通路的气密性,优选地,上环盖100与中环盖200之间、中环盖200与下环盖300之间也可采用密封件密封连接。In order to ensure the airtightness of the fluid passage in the upper cover, preferably, seals can also be used for sealing connection between the
为提高进气管路的稳定性,优选地,如图1所示,上环盖100的一角还形成有边缘进气通道,边缘进气通道的一端在上环盖100的侧壁上形成边缘进气口501,另一端在上环盖100的顶面上形成边缘进气接口,进气总管510的进气端与边缘进气接口连接,从而通过上环盖100固定进气总管510进气端的位置,在半导体工艺设备的使用过程中,气源通过相应管路与上环盖100上的边缘进气口501连接,管路拆装过程均不会影响进气总管510,从而提高了进气管路的稳定性,进而提高了边缘进气气流的均匀性与稳定性。In order to improve the stability of the intake pipeline, preferably, as shown in FIG.
具体地,如图4和图5所示,上环盖100的底面或中环盖200的顶面上形成有环绕中环盖200轴线的第一环形密封槽231和第二环形密封槽232(图4和图5中所示为第一环形密封槽231形成在中环盖200的顶面上,第二环形密封槽232形成在上环盖100的底面上的情况),第一环形密封槽231的半径小于第一导流槽110和第二导流槽210中弧形槽的半径,第二环形密封槽232的半径大于第一导流槽110和第二导流槽210中弧形槽的半径。环形凸起部310的顶面上形成有环绕中环盖200轴线的第三环形密封槽331,下环盖300的顶面上形成有环绕下环盖300轴线且半径大于环形气道320最大半径的第四环形密封槽332。第一环形密封槽231、第二环形密封槽232、第三环形密封槽331和第四环形密封槽332中均设置有环形密封件(例如,可以是O型密封圈)。Specifically, as shown in Fig. 4 and Fig. 5, a first
如图4所示,上环盖100的底面或中环盖200的顶面上形成有环绕中环盖200轴线的诱电线圈槽233,诱电线圈槽233中设置有诱电线圈,用于快速释放上盖中累积的电荷,增强边缘进气组件的各组件间的电连接性,以保持与接地端电性连接。As shown in Figure 4, the bottom surface of the
本发明实施例对进气支管530、进气孔120和第一导流槽110的数量不作具体限定,例如,当上环盖100、中环盖200和下环盖300的外轮廓为近似正方形时,可选地,如图1至图12所示,进气管路包括4根进气支管530,上环盖100在四角区域分别形成有4个进气孔120(进气孔120-1、进气孔120-2、进气孔120-3和进气孔120-4),上环盖100的底面上对应形成有4个第一导流槽110。The embodiment of the present invention does not specifically limit the number of the
如图9至图12所示,在第一导流槽110仅包括1级上弧形槽111时,第二导流槽210包括2级下弧形槽(第一级下弧形槽211和第二级下弧形槽212)时,4个进气孔120(进气孔120-1、进气孔120-2、进气孔120-3和进气孔120-4)分别通过4个第二导流槽210在8个连通位置(连通位置A至H)与8个第二导流槽210连通。8个第二导流槽210又分别通过32个中盖通孔220与下方的环形间隙连通。As shown in Figures 9 to 12, when the
例如,图11所示为气流由进气孔120-1流向其对应的8个中盖通孔220的流向示意图,图1至图12中箭头所示为气流走向,气流由进气孔120-1流入上弧形槽111后,沿上弧形槽111分流为两股并流动至两端的两个连通位置,即连通位置A和连通位置B,随后一股气流由连通位置A流入第二导流槽210中,并最终分流至4个中盖通孔220(B-1、B-2、B-3、B-4)中,另一股气流由连通位置B流入另一第二导流槽210中,最终也分流至4个中盖通孔220(A-1、A-2、A-3、A-4)中,进气孔120-1对应的通位置A和连通位置B与上盖轴线在水平面上的投影的连线之间的夹角为45°,最终连通的中盖通孔220所在区域对应夹角为90°,即,4个进气孔120分别将工艺气体均匀分流至环形缝隙的四分之一区域中,最终实现360°均匀进气。For example, FIG. 11 shows a schematic diagram of the flow direction of the airflow from the air intake hole 120-1 to the corresponding eight middle cover through
作为本发明的第二个方面,提供一种半导体工艺设备,包括工艺腔室、边缘进气组件和承载盘,承载盘设置于工艺腔室内,边缘进气组件设置于工艺腔室的顶部开口处,其中,该边缘进气组件为本发明实施例提供的边缘进气组件。As a second aspect of the present invention, a semiconductor process equipment is provided, including a process chamber, an edge inlet assembly and a carrier plate, the carrier tray is arranged in the process chamber, and the edge inlet assembly is arranged at the top opening of the process chamber , wherein the edge air intake assembly is the edge air intake assembly provided by the embodiment of the present invention.
在本发明提供的半导体工艺设备中,上环盖100和中环盖200之间形成有至少一组匀气组合气道,每组匀气组合气道均能够将一个进气孔引入的工艺气体分流至多个喷气孔并喷出,从而通过下环盖300均匀地喷射至承载盘上方空间的边缘区域。该匀气组合气道位于上环盖100和中环盖200之间,从而仅需使上环盖100与中环盖200的相对表面贴合并进行固定即可组装该匀气组合气道,组装过程中不存在化学或物理反应,与现有技术中焊接多层子通道的方案相比,提高了结构整体的稳定性及气体通路的截面均匀性,可以进一步保证下环盖300喷射工艺气体的均匀性。In the semiconductor process equipment provided by the present invention, at least one group of uniform gas combined gas channels is formed between the
并且,在通过密封件(如,密封圈)对匀气组合气道进行密封时,密封件仅需对上环盖100的底面与中环盖200的顶面之间的缝隙进行密封,在上盖拆装过程中,密封件仅受对侧平面的挤压作用,不会在挤压状态下与其他结构之间发生摩擦而承受剪切力,提高了上盖密封拆装的便捷性,延长了上盖中密封件的使用寿命。And, when sealing the uniform gas combined air passage by the sealing member (such as a sealing ring), the sealing member only needs to seal the gap between the bottom surface of the
此外,在匀气组合气道中积有颗粒物等需除去的物质时,仅需将上环盖100、中环盖200和下环盖300拆开,即可将匀气组合气道对应于上环盖100的底面或中环盖200的顶面上的凹槽结构直接暴露在外,以便于对这些凹槽结构进行清洁,提高了维护整体结构的便捷性。In addition, when particles and other substances that need to be removed accumulate in the combined air channel of the uniform gas, it is only necessary to disassemble the
作为本发明的一种可选实施方式,如图1、图2、图5、图6所示,介质窗700的中央位置形成有中心进气孔603,半导体工艺设备还包括中间进气管路602,用于通过中心进气孔603向工艺腔室内提供工艺气体。As an optional embodiment of the present invention, as shown in Figure 1, Figure 2, Figure 5, and Figure 6, a
在本发明实施例中,中间进气管路通过中心进气孔603向承载盘上方空间的中心区域提供工艺气体,本发明实施例提供的边缘进气组件通过下环盖内环壁上环绕设置的多个喷气孔向承载盘上方空间的边缘区域提供工艺气体,从而组合实现中间进气加边缘进气,进一步提高工艺腔室中工艺气体的进气均匀性。In the embodiment of the present invention, the intermediate air intake pipeline supplies the process gas to the central area of the space above the carrier plate through the central
为提高中间进气管路的稳定性,优选地,如图1、图2所示,上环盖100的一角还形成有中间进气通道,中间进气通道的一端在上环盖100的侧壁上形成中间进气口601,另一端在上环盖100的顶面上形成中间进气接口,中间进气管路602的进气端与中间进气接口连接,从而通过上环盖100固定中间进气管路602进气端的位置,在半导体工艺设备的使用过程中,气源通过相应管路与上环盖100上的中间进气口601连接,管路拆装过程均不会影响中间进气管路602,从而提高了中间进气管路的稳定性,进而提高了中间进气气流的均匀性与稳定性。为便于布置管路,优选地,如图1、图2所示,中间进气口601与边缘进气口501位置相邻。In order to improve the stability of the middle air intake pipeline, preferably, as shown in Figure 1 and Figure 2, a corner of the
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.
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