CN115857612B - Band gap reference source and low temperature drift control method, system and chip thereof - Google Patents
Band gap reference source and low temperature drift control method, system and chip thereof Download PDFInfo
- Publication number
- CN115857612B CN115857612B CN202310189747.5A CN202310189747A CN115857612B CN 115857612 B CN115857612 B CN 115857612B CN 202310189747 A CN202310189747 A CN 202310189747A CN 115857612 B CN115857612 B CN 115857612B
- Authority
- CN
- China
- Prior art keywords
- bjt
- tube
- source
- reference source
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000012360 testing method Methods 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000001276 controlling effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 101000986989 Naja kaouthia Acidic phospholipase A2 CM-II Proteins 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
A band gap reference source, a low temperature drift control method, a system and a chip thereof are provided, wherein the band gap reference source comprises a band gap reference module and a leakage current compensation module. In the band gap reference module, a first BJT tube and a second BJT tube are used for outputting reference voltage; the first current mirror is connected with the first BJT tube and the second BJT tube and is used for providing bias current for the second BJT tube. In the leakage current compensation module, the BJT tube group is used for providing leakage current compensation for the second BJT tube; the second current mirror is used for mirroring leakage current generated by the BJT tube group to the second BJT tube; the switch control unit is used for controlling the switch of each BJT tube in the BJT tube group. By switching on at least one BJT tube in the BJT tube group, the electric leakage of the second BJT tube collector to the chip substrate can be effectively compensated, the temperature coefficient of the band gap reference source is reduced, the precision and the performance of the whole circuit are ensured, the design and the manufacturing process of the BJT tube are not required to be adjusted, and the BJT tube is simple in structure, flexible and adjustable and convenient to implement.
Description
Technical Field
The present disclosure relates to the field of integrated circuits, and in particular, to a bandgap reference source, and a method, a system, and a chip for controlling a low temperature drift of the bandgap reference source.
Background
Bandgap references are widely used in various integrated circuits to provide a reference voltage that is substantially constant over temperature variations. The principle is that the base-emitter voltage difference delta Vbe of two BJT transistors (Bipolar Junction Transistor, bipolar junction transistors) with different current densities has a positive temperature coefficient, and the temperature drift characteristic of Vbe is counteracted within a certain range by weighting the coefficient, so that the reference voltage Vref with approximately zero temperature drift is obtained.
However, in practice, the collector of the BJT transistor leaks electricity to the chip substrate at high temperature, so that the reference voltage increases, thereby affecting the accuracy and performance of the overall circuit. In the related art, BJT tube manufacturers are required to reduce the leakage by changing designs, processes, etc., but this requires an increased device area and high production costs.
Disclosure of Invention
In order to solve at least one of the above technical problems, an object of the present application is to provide a bandgap reference source, a low temperature drift control method, a system and a chip thereof, which can effectively compensate the leakage of the second BJT tube collector to the chip substrate by switching on at least one BJT tube in the BJT tube group, reduce the temperature coefficient of the bandgap reference source, help to ensure the precision and performance of the whole circuit, and do not need to adjust the design and manufacturing process of the BJT tube itself.
To achieve the above object, the present application provides a bandgap reference source, including: a band gap reference module and a leakage current compensation module; wherein,,
the band gap reference block comprises a band gap reference block,
a first resistor and a second resistor;
the emitter of the first BJT tube is grounded through the first resistor, and the emitter of the second BJT tube is connected with the emitter of the first BJT tube through the second resistor; the base electrodes of the two are connected with each other and are connected with a voltage output end for outputting reference voltage;
a first current mirror connected to the first and second BJT transistors for providing a bias current to the second BJT transistor;
the leakage current compensation module comprises a circuit board,
a BJT tube set for providing leakage current compensation to the second BJT tube;
a second current mirror for mirroring the leakage current generated by the BJT tube group to the second BJT tube;
and the switch control unit is used for controlling the switch of each BJT tube in the BJT tube group.
Further, the second current mirror comprises a first MOS tube and a second MOS tube which are connected in a common-gate and common-source mode; the source electrodes of the two are connected with a power supply voltage end; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the first MOS transistor and the BJT tube group;
and the drain electrode of the second MOS tube is connected with the collector electrode of the second BJT tube.
Still further, the BJT stack includes a plurality of BJT tubes connected by common collector and common emitter;
the collector electrodes of the BJT tubes are connected with the second current mirror; the emitters of the first BJT transistors are connected with the emitter of the first BJT transistor; the bases of the switches are respectively connected with corresponding switches of the switch control unit.
Still further, the switch control unit includes a plurality of switches;
and one end of the switches is correspondingly connected with the base electrodes of the BJT tubes, and the other end of the switches is connected with the emitter electrode of the first BJT tube.
Further, the first current mirror comprises a third MOS tube and a fourth MOS tube which are connected in a common-gate and common-source mode; the source electrodes of the two are connected with a power supply voltage end; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the third MOS transistor and the collector electrode of the first BJT transistor;
and the drain electrode of the fourth MOS tube is connected with the collector electrode of the second BJT tube.
Further, the bandgap reference module further comprises,
a compensation resistor;
and one end of the compensation capacitor is connected with the collector electrode of the second BJT tube, and the other end of the compensation capacitor is connected with the voltage output end through the compensation resistor.
Still further, the bandgap reference module further comprises,
the third current mirror is composed of a third MOS tube and a fifth MOS tube which are connected by a common gate and a common source; the drain electrode of the fifth MOS tube is connected with the grid electrode of the MOS tube in the fourth current mirror;
the fourth current mirror is composed of a sixth MOS tube and a seventh MOS tube which are connected by a common gate and a common source; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the sixth MOS transistor; the sources of the two are grounded; the drain electrode of the seventh MOS tube is connected with the drain electrode of the eighth MOS tube;
an eighth MOS transistor, the grid electrode of which is connected with the collector electrode of the second BJT transistor; the source electrode is connected with the power supply voltage terminal.
Still further, the bandgap reference module further comprises,
a third resistor and a fourth resistor;
the grid electrode of the source follower is connected with the drain electrode of the eighth MOS tube; the drain electrode of the capacitor is connected with the power supply voltage end through the third resistor; the source electrode of the voltage source is connected with the voltage output end through the fourth resistor;
and one end of the fifth resistor is connected with the voltage output end, and the other end of the fifth resistor is grounded.
Further, the BJT tube in the BJT tube group is the same as the production lot of the second BJT tube.
In order to achieve the above object, the present application further provides a method for controlling a low temperature drift of a bandgap reference source, which is applied to the bandgap reference source as described above, including,
based on preset configuration, different BJT tubes in the BJT tube group of the band gap reference source are controlled to be opened so as to enter a plurality of corresponding test states;
in each test state, acquiring a temperature coefficient of a reference voltage of the band gap reference source to obtain a plurality of temperature coefficients corresponding to the plurality of test states;
acquiring a minimum temperature coefficient of the plurality of temperature coefficients;
and controlling the corresponding BJT tube to be opened according to the open state of the BJT tube group in the test state corresponding to the minimum temperature coefficient so as to output the band gap reference voltage with the minimum temperature coefficient.
In order to achieve the above object, the present application further provides a low temperature drift control system for a bandgap reference source, comprising,
a bandgap reference source as described above;
a low temperature drift control device; among these are the inclusion of,
the control module is used for controlling different BJT tubes in the BJT tube group of the band gap reference source to be opened based on preset configuration so as to enter a plurality of corresponding test states;
the acquisition module is used for acquiring the temperature coefficient of the reference voltage of the band gap reference source in each test state to obtain a plurality of temperature coefficients corresponding to the plurality of test states, and acquiring the minimum temperature coefficient in the plurality of temperature coefficients;
the control module is further configured to control the corresponding BJT tube to be turned on according to the turned-on state of the BJT tube set in the test state corresponding to the minimum temperature coefficient, so as to output a bandgap reference voltage with the minimum temperature coefficient.
To achieve the above object, the present application further provides a chip, which includes the bandgap reference source as described above.
To achieve the above object, the present application provides a computer-readable storage medium having stored thereon computer instructions which, when executed, perform the steps of the low temperature drift control method of a bandgap reference source as described above.
According to the band gap reference source, the band gap reference source outputs reference voltage through a first BJT tube and a second BJT tube in the band gap reference module, bias current is provided for the second BJT tube through a first current mirror, leakage current compensation is provided for the second BJT tube through the BJT tube group, leakage current generated by the BJT tube group is mirrored to the second BJT tube through a second current mirror, and a switch of each BJT tube in the BJT tube group is controlled through a switch control unit. Therefore, at least one BJT tube in the BJT tube group is connected, the electric leakage of the second BJT tube collector electrode to the chip substrate can be effectively compensated, the temperature coefficient of the band gap reference source is reduced, the precision and the performance of the whole circuit are guaranteed, the design and the manufacturing process of the BJT tube are not required to be adjusted, and the BJT tube is simple in structure, flexible and adjustable and convenient to implement.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate and explain the application and do not limit it. In the drawings:
FIG. 1 is a block diagram of a bandgap reference source according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a bandgap reference source according to an embodiment of the present application;
FIG. 3 is a graph of temperature characteristics of a bandgap reference source without a leakage current compensation module according to an embodiment of the application;
FIG. 4 is a graph of temperature characteristics of a bandgap reference source employing a leakage current compensation module according to an embodiment of the present application;
FIG. 5 is a block diagram of a chip architecture according to an embodiment of the present application;
FIG. 6 is a flow chart of a method for controlling low temperature drift of a bandgap reference source according to an embodiment of the present application;
fig. 7 is a block diagram of a low temperature drift control system of a bandgap reference source according to an embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it is to be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided to provide a more thorough and complete understanding of the present application. It should be understood that the drawings and examples of the present application are for illustrative purposes only and are not intended to limit the scope of the present application.
It should be understood that the various steps recited in the method embodiments of the present application may be performed in a different order and/or performed in parallel. Furthermore, method embodiments may include additional steps and/or omit performing the illustrated steps. The scope of the present application is not limited in this respect.
The term "including" and variations thereof as used herein are intended to be open-ended, i.e., including, but not limited to. The term "based on" is "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments. Related definitions of other terms will be given in the description below.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, units, or data and not for limiting the order or interdependence of the functions performed by such devices, modules, units, or data.
It should be noted that references to "one" or "a plurality" in this application are intended to be illustrative rather than limiting, and those of ordinary skill in the art will appreciate that "one or more" is intended to be interpreted as "one or more" unless the context clearly indicates otherwise. "plurality" is understood to mean two or more.
Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings.
Example 1
Fig. 1 is a block diagram of a bandgap reference source according to an embodiment of the present application, and referring to fig. 1, a bandgap reference source 10 includes a bandgap reference module 11 and a leakage current compensation module 12.
The bandgap reference module 11 includes a first current mirror CM1, a first BJT Q1, a second BJT Q2, a first resistor R1 and a second resistor R2. The first BJT Q1 and the second BJT Q2 are used for outputting reference voltage; a first current mirror CM1 for providing a bias current to the second BJT Q2.
The leakage current compensation module 12 includes a second current mirror CM2, a BJT group a, and a switch control unit SC. The BJT tube set A is used for providing leakage current compensation for the second BJT tube Q2; a second current mirror CM2 for mirroring the leakage current generated by the BJT group a to the second BJT Q2; and a switch control unit SC for controlling the switching of each BJT in the BJT group a.
Example 2
Fig. 2 is a schematic structural diagram of a bandgap reference source according to an embodiment of the application, and the bandgap reference source according to the embodiment of the application will be described in detail with reference to fig. 2.
In the bandgap reference module 11, an emitter of the first BJT Q1 is grounded through a first resistor R1, and an emitter of the second BJT Q2 is connected to an emitter of the first BJT Q1 through a second resistor R2; the bases of the first BJT Q1 and the second BJT Q2 are connected and connected with a voltage output end Vref.
It should be noted that, the base-emitter voltage of the first BJT Q1 is Vbe1, the base-emitter voltage of the second BJT Q2 is Vbe2, and the base-emitter voltage difference Δvbe of both have a positive temperature coefficient. The bandgap reference source 10 outputs a reference voltage through the first and second BJT transistors Q1 and Q2.
The first current mirror CM1 connects the first BJT Q1 and the second BJT Q2. In this embodiment, the first current mirror CM1 includes a third MOS transistor M3 and a fourth MOS transistor M4 that are connected by a common gate and a common source. The sources of the third MOS tube M3 and the fourth MOS tube M4 are connected with a power supply voltage end VDD, the grid electrodes of the third MOS tube M3 and the fourth MOS tube M4 are connected with the drain electrode of the third MOS tube M3 and the collector electrode of the first BJT tube Q1, and the drain electrode of the fourth MOS tube M4 is connected with the collector electrode of the second BJT tube Q2. The first current mirror CM1 is used to provide a bias current to the second BJT Q2.
In the leakage current compensation module 12, the second current mirror CM2 includes a first MOS transistor M1 and a second MOS transistor M2 that are connected by a common gate and a common source. The source electrodes of the first MOS tube M1 and the second MOS tube M2 are connected with a power supply voltage end VDD, the grid electrodes of the first MOS tube M1 and the second MOS tube M2 are connected with the drain electrode of the first MOS tube M1 and the BJT tube group A, and the drain electrode of the second MOS tube M2 is connected with the collector electrode of the second BJT tube Q2. The leakage current compensation module 12 mirrors the leakage current generated by the BJT group a to the second BJT Q2 through the second current mirror CM 2.
BJT tube set A includes a plurality of BJT tubes connected in a common collector-common emitter. The collectors of the BJT transistors are connected with the drain electrode of the first MOS transistor M1 in the second current mirror CM 2; emitters of the BJT transistors are connected with emitters of the first BJT transistor Q1; the bases of the BJT transistors are respectively connected with corresponding switches of the switch control unit SC. The leakage current compensation module 12 provides leakage current compensation to the second BJT Q2 through the BJT group a.
In a specific example, the BJT tube group a includes at least three BJT tubes, and the amplification factor may be the same, and the ratio may be 1:1:1, or may be increased, and the ratio may be 1:2:4.
Preferably, the BJT tube in BJT tube group a is the same as the production lot of the second BJT tube Q2. Therefore, the same substrate silicon wafer and the same manufacturing process are adopted, so that the same leakage current coefficient can be formed, and a better compensation effect can be achieved.
The switch control unit SC includes a plurality of switches. One end of the plurality of switches is correspondingly connected with the base electrodes of the plurality of BJT tubes in the BJT tube group A, and the other end of the plurality of switches is connected with the emitter electrode of the first BJT tube Q1. The leakage current compensation module 12 controls the switching of each BJT in the BJT group a through the switching control unit SC.
In this embodiment, the bandgap reference module 11 further includes a compensation resistor R6 and a compensation capacitor C. One end of the compensation capacitor C is connected with the collector electrode of the second BJT Q2, and the other end of the compensation capacitor C is connected with the voltage output end Vref through the compensation resistor R6. The compensation structure is used to separate the primary pole and the secondary primary pole, in a specific example, the loop phase margin can be made greater than 45 °.
Further, the bandgap reference module 11 further includes a third current mirror CM3, a fourth current mirror CM4, and an eighth MOS transistor M8.
The third current mirror CM3 is formed by a third MOS transistor M3 and a fifth MOS transistor M5 that are connected by a common gate and a common source. The drain electrode of the fifth MOS tube M5 is connected with the grid electrode of the MOS tube in the fourth current mirror CM 4. The fourth current mirror CM4 is composed of a sixth MOS transistor M6 and a seventh MOS transistor M7 which are connected by a common gate and a common source. The gates of the sixth MOS tube M6 and the seventh MOS tube M7 are connected with the drain electrode of the sixth MOS tube M6, and the source electrodes of the sixth MOS tube M6 and the seventh MOS tube M7 are grounded. The drain electrode of the seventh MOS tube M7 is connected with the drain electrode of the eighth MOS tube M8. An eighth MOS transistor M8, the grid electrode of which is connected with the collector electrode of the second BJT transistor Q2; the source is connected to the power supply voltage terminal VDD. The eighth MOS transistor M8 is configured to amplify a signal, and the third current mirror CM3 and the fourth current mirror CM4 are configured to provide a bias current to the eighth MOS transistor M8.
It can be understood that the MOS transistors in the first current mirror CM1, the second current mirror CM2, the third current mirror CM3, and the fourth current mirror CM4 in the above embodiment may be BJT transistors, which is not particularly limited in this application.
Still further, the bandgap reference module 11 further includes a source follower S, a third resistor R3, a fourth resistor R4, and a fifth resistor R5.
The grid electrode of the source follower S is connected with the drain electrode of the eighth MOS tube M8; the drain electrode of the source follower S is connected with a power supply voltage end VDD through a third resistor R3; the source of the source follower S is connected to the voltage output terminal Vref through a fourth resistor R4. One end of the fifth resistor R5 is connected with the voltage output end Vref, and the other end of the fifth resistor R5 is grounded. The third resistor R3 is used for protecting the drain voltage of the source follower S; the fourth resistor R4 and the fifth resistor R5 are used for forming a voltage division, and the divided voltage is fed back to the base electrode of the second BJT Q2 to form a feedback loop.
It is understood that the source follower S may be a MOS transistor or a BJT transistor.
It should be noted that, if the leakage current compensation module 12 in fig. 2 is not used, the gate voltage of the eighth MOS transistor M8 is reduced due to the leakage current of the second BJT transistor Q2 from the chip substrate at high temperature, so that the gate voltage and the source voltage of the source follower S are increased, and further, the reference voltage is increased, and at this time, the temperature characteristic curve of the bandgap reference source 10 is shown in fig. 3.
If the leakage current compensation module 12 in fig. 2 is adopted, the current leakage of the collector electrode of the BJT tube (in the working state) in the BJT tube group a is also leaked to the chip substrate, so that the current leakage of the first MOS tube M1 in the second current mirror CM2 is increased, the current of the second MOS tube M2 is increased, and the current of the second MOS tube M2 is injected into the second BJT tube Q2, thereby realizing the compensation of the leakage current of the second BJT tube Q2 itself. The BJT tube set A is used for adapting the compensation amplitude of leakage current, and the on-off of a plurality of BJT tubes in the BJT tube set A can be regulated through control logic, so that different temperature curves can be obtained.
Specifically, for the bandgap reference source 10 of fig. 2, the corresponding adjustment may be performed by the switch control unit SC according to the test result on the production line. For example, referring to fig. 4, curve 1 is a temperature characteristic curve of one BJT in the BJT group a when the BJT is turned on, and the positive temperature coefficient thereof is more obvious; curve 2 is the temperature characteristic curve of the BJT tube set a when two BJT tubes are open; curve 3 is a temperature characteristic curve of the BJT tube group a when all three BJT tubes are open, and its negative temperature coefficient is more obvious. Therefore, when the two BJT transistors corresponding to the curve 2 in the BJT tube group a are controlled to be turned on, compared with the case that the leakage current compensation module 12 is not used, the leakage current of the second BJT transistor Q2 collector to the chip substrate can be effectively compensated, and the temperature coefficient of the bandgap reference source 10 can be reduced to 30ppm/°c.
It is understood that the trimming (trimming) of the leakage current compensation may be performed manually or automatically, which is not particularly limited in this application.
In summary, according to the bandgap reference source of the embodiments of the present application, the reference voltage is output through the first BJT and the second BJT in the bandgap reference module, the bias current is provided to the second BJT through the first current mirror, the leakage current compensation is provided to the second BJT through the BJT group, the leakage current generated by the BJT group is mirrored to the second BJT through the second current mirror, and the switch of each BJT in the BJT group is controlled by the switch control unit. Therefore, at least one BJT tube in the BJT tube group is connected, the electric leakage of the second BJT tube collector electrode to the chip substrate can be effectively compensated, the temperature coefficient of the band gap reference source is reduced, the precision and the performance of the whole circuit are guaranteed, the design and the manufacturing process of the BJT tube are not required to be adjusted, and the BJT tube is simple in structure, flexible and adjustable and convenient to implement.
Example 3
Fig. 5 is a block diagram of a chip structure according to an embodiment of the present application. Referring to fig. 5, a chip 100 includes the bandgap reference source 10 of the above-described embodiment.
Example 4
Fig. 6 is a flowchart of a method for controlling a low temperature drift of a bandgap reference source according to an embodiment of the application. The method for controlling the low temperature drift of the bandgap reference source is applied to the bandgap reference source in the above embodiment, and referring to fig. 6, the method includes the following steps:
in step 301, based on a preset configuration, different BJT transistors in the BJT transistor group of the bandgap reference source are controlled to be turned on to enter a plurality of corresponding test states.
That is, a plurality of test states are formed based on a plurality of switch combinations of the preset BJT tube group. Thus providing different magnitudes of leakage current compensation to the bandgap reference module in different test states.
In step 302, in each test state, the temperature coefficient of the reference voltage of the bandgap reference source is obtained to obtain a plurality of temperature coefficients corresponding to a plurality of test states.
Specifically, the reference voltage maximum value Vmax, the reference voltage minimum value Vmin, the reference voltage average value Vmean, and the temperature variation range (Tmax-Tmin) can be obtained, and the temperature coefficient of the reference voltage can be obtained by:
therefore, the temperature coefficient corresponding to each test state is obtained in sequence, and a plurality of temperature coefficients are obtained.
In step 303, a minimum temperature coefficient of the plurality of temperature coefficients is obtained.
In step 304, the corresponding BJT tube is controlled to be turned on according to the turned-on state of the BJT tube group in the test state corresponding to the minimum temperature coefficient, so as to output the bandgap reference voltage with the minimum temperature coefficient.
According to the low-temperature drift control method of the band-gap reference source, based on preset configuration, different BJT tubes in the BJT tube group of the band-gap reference source are controlled to be opened so as to enter a plurality of corresponding test states, the temperature coefficient of the reference voltage of the band-gap reference source is obtained in each test state, the minimum temperature coefficient in the plurality of temperature coefficients is obtained, and the corresponding BJT tube group is controlled to be opened according to the opened state of the BJT tube group in the test state corresponding to the minimum temperature coefficient, so that electric leakage of the second BJT tube collector to the chip substrate can be automatically and effectively compensated, and the temperature coefficient of the band-gap reference source is reduced to the minimum.
Example 5
Fig. 7 is a block diagram of a low temperature drift control system of a bandgap reference source according to an embodiment of the present application. Referring to fig. 7, the low temperature drift control system 1000 of the bandgap reference source includes the bandgap reference source 10 and the low temperature drift control device 20 in the above-described embodiment.
The low-temperature drift control device 20 comprises a control module 21 and an acquisition module 22. The control module 21 controls different BJT transistors in the BJT transistor group of the bandgap reference source 10 to be turned on based on a preset configuration, so as to enter a plurality of corresponding test states. An obtaining module 22, configured to obtain, in each test state, a temperature coefficient of a reference voltage of the bandgap reference source 10, so as to obtain a plurality of temperature coefficients corresponding to the plurality of test states, and obtain a minimum temperature coefficient of the plurality of temperature coefficients.
And, the control module 21 also controls the corresponding BJT tube to be opened according to the opened state of the BJT tube group in the test state corresponding to the minimum temperature coefficient, so as to output the bandgap reference voltage with the minimum temperature coefficient.
It should be noted that, in the above embodiment, the explanation of the method for controlling the low temperature drift of the bandgap reference source is also applicable to the system for controlling the low temperature drift of the bandgap reference source in this embodiment, and will not be described herein.
Example 6
In one embodiment of the present application, there is also provided a computer readable storage medium, which may be included in the system described in the above embodiment; or may exist alone without being assembled into the system. The computer readable storage medium carries one or more computer instructions which, when executed, implement the steps of the vehicle gateway testing method of the above-described embodiments.
Embodiments of the present application, the computer-readable storage medium may be a non-volatile computer-readable storage medium, which may include, for example, but not limited to: portable computer diskette, hard disk, random Access Memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), portable compact disc read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
Those of ordinary skill in the art will appreciate that: the foregoing description is only a preferred embodiment of the present application, and is not intended to limit the present application, but although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or that equivalents may be substituted for part of the technical features thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. The band gap reference source is characterized by comprising a band gap reference module and a leakage current compensation module; wherein,,
the band gap reference block comprises a band gap reference block,
a first resistor and a second resistor;
the emitter of the first BJT tube is grounded through the first resistor, and the emitter of the second BJT tube is connected with the emitter of the first BJT tube through the second resistor; the base electrodes of the two are connected with each other and are connected with a voltage output end for outputting reference voltage;
a first current mirror connected to the first and second BJT transistors for providing a bias current to the second BJT transistor;
the first current mirror comprises a third MOS tube and a fourth MOS tube which are connected in a common-gate and common-source mode; the source electrodes of the two are connected with a power supply voltage end; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the third MOS transistor and the collector electrode of the first BJT transistor; the drain electrode of the fourth MOS tube is connected with the collector electrode of the second BJT tube;
a compensation resistor;
one end of the compensation capacitor is connected with the collector electrode of the second BJT tube, and the other end of the compensation capacitor is connected with the voltage output end through the compensation resistor;
the third current mirror is composed of a third MOS tube and a fifth MOS tube which are connected by a common gate and a common source; the drain electrode of the fifth MOS tube is connected with the grid electrode of the MOS tube in the fourth current mirror;
the fourth current mirror is composed of a sixth MOS tube and a seventh MOS tube which are connected by a common gate and a common source; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the sixth MOS transistor; the sources of the two are grounded; the drain electrode of the seventh MOS tube is connected with the drain electrode of the eighth MOS tube;
an eighth MOS transistor, the grid electrode of which is connected with the collector electrode of the second BJT transistor; the source electrode is connected with the power supply voltage end;
the leakage current compensation module comprises a circuit board,
a BJT tube set for providing leakage current compensation to the second BJT tube;
a second current mirror for mirroring the leakage current generated by the BJT tube group to the second BJT tube;
and the switch control unit is used for controlling the switch of each BJT tube in the BJT tube group.
2. The bandgap reference source of claim 1, wherein said second current mirror comprises a first MOS transistor and a second MOS transistor connected together by a common gate and common source; the source electrodes of the two are connected with a power supply voltage end; the grid electrodes of the first MOS transistor and the second MOS transistor are connected with the drain electrode of the first MOS transistor and the BJT tube group;
and the drain electrode of the second MOS tube is connected with the collector electrode of the second BJT tube.
3. The bandgap reference source according to claim 2, wherein said set of BJT tubes comprises a plurality of BJT tubes connected by a common collector common emitter;
the collector electrodes of the BJT tubes are connected with the second current mirror; the emitters of the first BJT transistors are connected with the emitter of the first BJT transistor; the bases of the switches are respectively connected with corresponding switches of the switch control unit.
4. A bandgap reference source as claimed in claim 3, wherein said switch control unit comprises a plurality of switches;
and one end of the switches is correspondingly connected with the base electrodes of the BJT tubes, and the other end of the switches is connected with the emitter electrode of the first BJT tube.
5. The bandgap reference source according to claim 1, wherein said bandgap reference module further comprises,
a third resistor and a fourth resistor;
the grid electrode of the source follower is connected with the drain electrode of the eighth MOS tube; the drain electrode of the capacitor is connected with the power supply voltage end through the third resistor; the source electrode of the voltage source is connected with the voltage output end through the fourth resistor;
and one end of the fifth resistor is connected with the voltage output end, and the other end of the fifth resistor is grounded.
6. The bandgap reference source according to any of claims 1-5, wherein the BJT transistors in the BJT stack are identical to the production lot of the second BJT transistors.
7. A method for controlling low temperature drift of a bandgap reference source, which is applied to the bandgap reference source of claim 1, the method comprising,
based on preset configuration, different BJT tubes in the BJT tube group of the band gap reference source are controlled to be opened so as to enter a plurality of corresponding test states;
in each test state, acquiring a temperature coefficient of a reference voltage of the band gap reference source to obtain a plurality of temperature coefficients corresponding to the plurality of test states;
acquiring a minimum temperature coefficient of the plurality of temperature coefficients;
and controlling the corresponding BJT tube to be opened according to the open state of the BJT tube group in the test state corresponding to the minimum temperature coefficient so as to output the band gap reference voltage with the minimum temperature coefficient.
8. A low temperature drift control system of a band gap reference source is characterized by comprising,
the bandgap reference source of claim 1;
a low temperature drift control device; among these are the inclusion of,
the control module is used for controlling different BJT tubes in the BJT tube group of the band gap reference source to be opened based on preset configuration so as to enter a plurality of corresponding test states;
the acquisition module is used for acquiring the temperature coefficient of the reference voltage of the band gap reference source in each test state to obtain a plurality of temperature coefficients corresponding to the plurality of test states, and acquiring the minimum temperature coefficient in the plurality of temperature coefficients;
the control module is further configured to control the corresponding BJT tube to be turned on according to the turned-on state of the BJT tube set in the test state corresponding to the minimum temperature coefficient, so as to output a bandgap reference voltage with the minimum temperature coefficient.
9. A chip comprising the bandgap reference source of any one of claims 1 to 6.
10. A computer readable storage medium having stored thereon computer instructions which when run perform the steps of the method for controlling the low temperature drift of a bandgap reference source as claimed in claim 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310189747.5A CN115857612B (en) | 2023-03-02 | 2023-03-02 | Band gap reference source and low temperature drift control method, system and chip thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310189747.5A CN115857612B (en) | 2023-03-02 | 2023-03-02 | Band gap reference source and low temperature drift control method, system and chip thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115857612A CN115857612A (en) | 2023-03-28 |
| CN115857612B true CN115857612B (en) | 2023-05-09 |
Family
ID=85659700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310189747.5A Active CN115857612B (en) | 2023-03-02 | 2023-03-02 | Band gap reference source and low temperature drift control method, system and chip thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115857612B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119690191A (en) * | 2025-02-25 | 2025-03-25 | 芯洲科技(北京)股份有限公司 | Wide temperature range high precision band gap reference circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
| CN104635835A (en) * | 2013-11-14 | 2015-05-20 | 展讯通信（上海）有限公司 | Band-gap reference circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144250A (en) * | 1999-01-27 | 2000-11-07 | Linear Technology Corporation | Error amplifier reference circuit |
| JP4544458B2 (en) * | 2004-11-11 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| US8829883B2 (en) * | 2011-09-09 | 2014-09-09 | Atmel Corporation | Leakage-current compensation for a voltage regulator |
| CN103760944B (en) * | 2014-02-10 | 2016-04-06 | 绍兴光大芯业微电子有限公司 | Realize base current compensation without amplifier internal electric source structure |
| US9971374B2 (en) * | 2015-12-22 | 2018-05-15 | Semiconductor Components Industries, Llc | HV MOS leakage compensation for ultralow current operation |
| JP6805005B2 (en) * | 2017-01-30 | 2020-12-23 | エイブリック株式会社 | Leakage current compensation circuit and semiconductor device |
| IT201900022518A1 (en) * | 2019-11-29 | 2021-05-29 | St Microelectronics Srl | BANDGAP REFERENCE CIRCUIT, DEVICE AND CORRESPONDING USE |
| CN113093852B (en) * | 2021-04-14 | 2022-11-01 | 北京芯愿景软件技术股份有限公司 | Electric leakage compensation circuit |
| CN113419591B (en) * | 2021-07-23 | 2022-06-17 | 深圳英集芯科技股份有限公司 | Leakage current compensation structure, method, device and equipment based on band gap collector |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
-
2023
- 2023-03-02 CN CN202310189747.5A patent/CN115857612B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
| CN104635835A (en) * | 2013-11-14 | 2015-05-20 | 展讯通信（上海）有限公司 | Band-gap reference circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115857612A (en) | 2023-03-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2022105890A1 (en) | Voltage bias circuit with adjustable output, and chip and communication terminal | |
| CN108052154B (en) | High-order low-temperature drift band gap reference circuit without operational amplifier | |
| CN209514446U (en) | A kind of wide temperature range band-gap reference voltage circuit | |
| CN111562807A (en) | Bandgap Reference | |
| CN113311898B (en) | An LDO circuit, chip and communication terminal with power supply suppression | |
| CN115993867B (en) | A low-power high-voltage linear regulator with adjustable output voltage and a voltage stabilization method thereof | |
| CN115857612B (en) | Band gap reference source and low temperature drift control method, system and chip thereof | |
| CN113485505B (en) | High-voltage low-power-consumption band-gap reference voltage source | |
| CN113157041A (en) | Wide-input band gap reference voltage source | |
| CN216719001U (en) | Low-temperature drift band gap reference voltage source based on Brokaw structure | |
| CN114489221A (en) | Band gap reference voltage source circuit and band gap reference voltage source | |
| CN118331381B (en) | Band-gap reference circuit with base current compensation | |
| CN115857601A (en) | A High Performance Bandgap Reference Circuit | |
| CN108052151A (en) | A kind of bandgap voltage reference without clamped amplifier | |
| CN118210349A (en) | Linear voltage stabilizer circuit, memory circuit and micro-processing chip | |
| US20110068756A1 (en) | Band-gap reference voltage generation circuit | |
| CN112256078B (en) | Positive temperature coefficient current source and zero temperature coefficient current source | |
| CN105739596B (en) | A High-precision Reference Voltage Source Circuit Using Quadratic Positive Temperature Coefficient Compensation | |
| CN117453001A (en) | A new type of high-precision bandgap reference source | |
| CN116166078A (en) | A low-temperature drift high-precision reference voltage source for CAN bus transceiver | |
| CN111596717B (en) | Second-order compensation reference voltage source | |
| CN116069111A (en) | A High and Low Temperature Curvature Compensation Zener Reference Voltage Source Circuit | |
| CN108376010A (en) | A kind of low temp rising high precision current source suitable for arbitrary resistance type | |
| CN115576383B (en) | Band gap reference circuit and band gap reference chip | |
| CN223051669U (en) | Zero temperature coefficient generating circuit capable of inhibiting process drift and chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |