CN115890478B - Polishing heads and polishing equipment - Google Patents
Polishing heads and polishing equipment Download PDFInfo
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- CN115890478B CN115890478B CN202211713309.6A CN202211713309A CN115890478B CN 115890478 B CN115890478 B CN 115890478B CN 202211713309 A CN202211713309 A CN 202211713309A CN 115890478 B CN115890478 B CN 115890478B
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- polishing
- silicon wafer
- head
- discharge port
- polishing head
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- 238000005498 polishing Methods 0.000 title claims abstract description 149
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000010703 silicon Substances 0.000 claims abstract description 87
- 239000007788 liquid Substances 0.000 claims abstract description 38
- 239000007789 gas Substances 0.000 claims description 15
- 238000001179 sorption measurement Methods 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 90
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000000126 substance Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007518 final polishing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 preferably Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明实施例公开了抛光头和抛光设备，所述抛光头包括：头部主体；设置在所述头部主体的下表面上的吸附口，所述吸附口用于吸附硅片，使得所述硅片能够与所述头部主体一起运动；设置在所述头部主体的下表面上的第一排放口，所述第一排放口沿径向方向设置在所述吸附口的外侧，用于在所述硅片被抛光时在所述硅片的周向外侧排放气体，以减少所述硅片的边缘附近的抛光液的量。
An embodiment of the present invention discloses a polishing head and a polishing device, wherein the polishing head comprises: a head body; a suction port arranged on the lower surface of the head body, wherein the suction port is used to suction a silicon wafer so that the silicon wafer can move together with the head body; and a first discharge port arranged on the lower surface of the head body, wherein the first discharge port is arranged on the outer side of the suction port along the radial direction, and is used to discharge gas on the circumferential outer side of the silicon wafer when the silicon wafer is polished, so as to reduce the amount of polishing liquid near the edge of the silicon wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing head and polishing equipment.
Background
In the process of producing silicon wafers, a Final Polishing (FP) process is the last process to control the wafer flatness and roughness parameters. The final polishing process is to remove the defects of the front-end process and mirror polish the surface of the silicon wafer by removing a certain amount from the surface of the silicon wafer.
During FP operations, the most common embodiment is the chemical mechanical Polishing (CMP, chemical Mechanical Polishing) method, and the chemical mechanical Polishing process of silicon wafers is a complex multiple reaction process, which can be divided into two dynamic processes: firstly, oxidizing agents, catalysts and the like in polishing liquid adsorbed on a polishing pad and silicon atoms on the surface of a silicon wafer are subjected to a dynamic process of oxidation reduction, and secondly, a resolution process that reactants on the polishing surface of the silicon wafer are separated from the surface of the silicon wafer, namely, a dynamic process that unreacted silicon atoms are re-exposed. The chemical mechanical polishing process is a process combining mechanical friction and chemical corrosion, combines the advantages of the mechanical friction and the chemical corrosion, and can obtain a flat silicon wafer surface.
In the CMP method, it is required to press a silicon wafer against a vibrating polishing table with a polishing pad by a polishing head while supplying a polishing liquid to the polishing pad. During polishing, the polishing head and the polishing table are rotated relative to each other, and the polishing liquid is distributed to the polishing pad by centrifugal force generated by the rotation of the polishing table, but also because of the centrifugal force, the amount of slurry in the central region of the polishing pad is smaller than that in the edge region of the polishing pad, resulting in a larger amount of polishing removal in the edge region of the silicon wafer surface than in the central region of the silicon wafer surface, thereby causing deterioration in the surface flatness of the silicon wafer.
Disclosure of Invention
In view of this, it is desirable to provide a polishing head and a polishing apparatus capable of polishing a silicon wafer under a uniform working pressure, thereby improving the quality of planarization of the silicon wafer.
The technical scheme of the invention is realized as follows:
In a first aspect, embodiments of the present invention provide a polishing head comprising:
A head body;
an adsorption port provided on a lower surface of the head body, the adsorption port being for adsorbing a silicon wafer so that the silicon wafer can move together with the head body;
And a first discharge port provided on a lower surface of the head body, the first discharge port being provided outside the adsorption port in a radial direction for discharging a gas outside a circumferential direction of the silicon wafer when the silicon wafer is polished to reduce an amount of the polishing liquid near an edge of the silicon wafer.
In a second aspect, an embodiment of the present invention provides a polishing apparatus including the polishing head according to the first aspect.
The embodiment of the invention provides a polishing head and polishing equipment; the polishing head adsorbs a silicon wafer through the adsorption port arranged on the lower surface of the head main body, so that the silicon wafer is fixed to the head main body and can move together with the head main body, the lower surface of the head main body of the polishing head is also provided with a first discharge port, and the first discharge port is arranged to discharge gas at the circumferential outer side of the silicon wafer when the silicon wafer is polished, so that a gas barrier can be formed at the circumferential outer side of the silicon wafer, excessive polishing liquid can be blocked to gather at the edge of the silicon wafer by virtue of the gas barrier, the quantity of polishing liquid for polishing the edge of the silicon wafer is reduced, the excessive polishing of the edge of the silicon wafer is avoided, and the flatness of the polished silicon wafer is improved.
Drawings
FIG. 1 is a schematic view of a conventional polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a front view of a polishing head according to an embodiment of the present invention;
FIG. 3 is a bottom view of a polishing head according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a polishing apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
After the silicon wafer is subjected to a double-sided polishing process, fine damage is usually left on the surface. In order to remove the damage and make the silicon wafer mirror and continuously improve the flatness, FP work is generally performed. The conventional FP work is to bring a Polishing Head (Polishing Head) loaded with a silicon wafer into contact with the surface of a Polishing pad attached to a lower platen, and the surface of the silicon wafer is polished by a chemical reaction between a colloidal Polishing liquid (Colloidal slurry) supplied through a Polishing liquid pipe (slurry Tube) and a chemical (chemical) and by the influence of a physical reaction caused by mechanical pressurization.
Specifically, the silicon wafer after the double-sided polishing process is put into a cleaning machine, and then the FP operation is required after the silicon wafer is discharged from the cleaning machine, and the complete FP operation flow includes three polishing operations, specifically as follows: firstly, performing a first FP step, which can also be called as a rough Polishing (Stock Polishing) step, on a silicon wafer, wherein the step is used for removing surface defects caused by a preceding process of the silicon wafer and manufacturing the silicon wafer into a mirror surface state; this step is used to adjust the flatness of the abrasive particles (particles) and the entire wafer surface during the process. The rough polishing step is followed by a second FP step that adjusts the abrasive particles by using a minimum amount of polishing to adjust the roughness of the wafer surface. After the second FP step is completed, a third FP step is performed, which is used to adjust the micro roughness (micro roughness) and fine particles (FINE PARTICLE) on the surface of the silicon wafer and complete the ending operation. After completing the FP operation of the above 3 steps, the silicon wafer is simply surface-cleaned in the apparatus, and finally placed in the blanking cassette (unloading cassette), and a waiting process is performed until the blanking cassette is filled with the silicon wafer.
For the first FP step in the above operation flow, that is, the rough Polishing step, in the process of the operation, a Finish Polishing (FP) device 100 capable of implementing the technical solution of the embodiment of the present invention is shown in fig. 1, where the FP device 100 specifically may include: the polishing apparatus comprises a polishing head 101, an adsorption pad 102, a polishing liquid supply line 103, a polishing disk 104, a polishing pad 105 attached to the polishing disk 104, a first drive shaft 106 and a second drive shaft 107. When the FP device 100 is used for final polishing of the silicon wafer W, a polishing liquid is supplied to the polishing pad 105 through the polishing liquid supply line 103 at a constant supply flow rate under the condition that the adsorption pad 102 is adsorbed to the back surface of the silicon wafer W, and after the polishing liquid is supplied to the polishing pad 105 and contacts the silicon wafer W, the polishing disk 104 and the polishing head 101 are driven to perform relative rotation by the first drive shaft 106 and the second drive shaft 107, respectively, and pressure is applied to the silicon wafer W by the polishing head 101 to complete the final polishing operation of the silicon wafer W. The damaged surfaces of the silicon wafer W generated in the previous part of the mechanical processing process can be removed by performing the final polishing operation on the silicon wafer W, and these damaged surfaces are chemically softened by the polishing liquid in the final polishing process, and the chemically softened damaged surfaces can be removed by the mechanical movement with the polishing pad 105. And repeating the final polishing process to completely remove the damaged surface on the surface of the silicon wafer W and finally planarize the surface of the silicon wafer W.
Since the wafer and the polishing pad are always in a relative rotation state when final polishing is performed using the FP device 100, the polishing liquid tends to accumulate at the edge of the wafer due to centrifugal action caused by rotation, which makes the polishing removal amount of the edge region of the wafer surface larger than that of the central region of the wafer surface, and the unevenness of the polishing removal amount eventually causes the flatness of the wafer surface to deteriorate.
In this regard, the embodiment of the invention provides a polishing head and polishing equipment; the flatness level of the polished silicon wafer can be improved by intervening the distribution and components of the polishing liquid in the polished area of the silicon wafer.
Referring to fig. 2, in a first aspect, an embodiment of the present invention proposes a polishing head 200, the polishing head 200 comprising:
A head main body 201;
An adsorption port 202 provided on a lower surface 201a of the head main body 201, the adsorption port 202 being for adsorbing a silicon wafer W so that the silicon wafer W can move together with the head main body 201;
A first discharge port 203 provided on a lower surface 201a of the head main body 201, the first discharge port 203 being provided outside the adsorption port 202 in a radial direction for discharging a gas outside a circumferential direction of the silicon wafer W when the silicon wafer W is polished to reduce an amount of the polishing liquid near an edge of the silicon wafer W.
As shown in fig. 2, the head main body 201 has a pipe penetrating the center thereof in the vertical direction, the pipe leading to the suction port 202 so that a negative pressure can be formed at the suction port 202 to suck the wafer W to the polishing head 200 so that the polishing head 200 can drive the wafer W to move therewith, a first discharge port 203 is further provided at the outer side of the suction port 202 in the radial direction of the lower surface 201a of the head main body 201, the first discharge port 203 is also located at the outer side of the wafer W sucked to the polishing head 200 in the circumferential direction for discharging a gas at the outer side of the wafer W in the circumferential direction to blow off the polishing liquid collected near the edge of the wafer W, the amount of the polishing liquid near the edge of the wafer W is reduced, thereby reducing the polishing amount to the edge of the wafer, and improving the surface flatness of the polished wafer.
Embodiments of the present invention provide a polishing head 200; the polishing head 200 adsorbs a silicon wafer W through an adsorption port 202 provided on a lower surface 201a of a head main body 201 so that the silicon wafer W is fixed to the head main body 201 to be movable together with the head main body 201, and a first discharge port 203 is further provided on the lower surface 201a of the head main body 201 of the polishing head 200, the first discharge port 203 being provided so as to be capable of discharging a gas at a circumferential outer side of the silicon wafer W when the silicon wafer W is polished, whereby a gas barrier can be formed at the circumferential outer side of the silicon wafer W, whereby an excessive amount of polishing liquid can be prevented from accumulating at an edge of the silicon wafer, an amount of polishing liquid for polishing the edge of the silicon wafer is reduced, thereby avoiding excessive polishing of the edge of the silicon wafer, and improving flatness of the polished silicon wafer.
In order to further reduce polishing of the edge portion of the silicon wafer, it is preferable that the polishing head 200 further includes a second discharge port 204 provided on the lower surface 201a of the head main body 201, the second discharge port 204 being located between the suction port 202 and the first discharge port 203 in a radial direction for discharging a liquid on the circumferential outer side of the silicon wafer W when the silicon wafer W is polished to reduce the concentration of the polishing liquid near the edge of the silicon wafer W, as shown in fig. 2 and 3.
As shown in fig. 2 and 3, a second discharge port 204 is further provided between the suction port 202 and the first discharge port 203 in the radial direction of the lower surface 201a of the head main body 201, and the second discharge port 204 is used for discharging liquid outside the circumferential direction of the silicon wafer W to dilute the polishing liquid near the edge of the silicon wafer, thereby reducing the concentration thereof and also playing a role of avoiding the excessive polishing of the edge of the silicon wafer.
In order to dilute the polishing liquid without adversely affecting the polishing liquid, preferably, the liquid is deionized water or a strong alkali solution, wherein the pH value of the strong alkali solution is greater than 11, particularly preferably, the pH value of the strong alkali solution is about 12, and the strong alkali solution can chemically react with grinding components such as silicon dioxide and the like in the grinding liquid to form a peptized body so as to effectively reduce the polishing capability of the polishing liquid.
For the realization of the first discharge opening, it may be formed, for example, as an annular opening. In order to enable more uniform discharge of the gas, preferably, as shown in fig. 3, the polishing head 200 includes a plurality of the first discharge ports 203 arranged in the circumferential direction of the lower surface 201a of the head main body 201, that is, a plurality of discrete first discharge ports 203, each of which may be uniformly spaced apart from each other. In the embodiment shown in fig. 3, each first discharge opening is rectangular, it is contemplated that the first discharge openings may take other shapes, such as circular, oblong, etc.
According to another preferred embodiment of the present invention, as shown in fig. 3, the polishing head 200 includes a plurality of the second discharge ports 204 arranged in the circumferential direction of the lower surface 201a of the head main body 201. In the embodiment shown in fig. 3, the second discharge port 204 is circular, but of course, the second discharge port 204 may be formed in other shapes, such as rectangular, triangular, etc.
The start time and duration of the discharge of the first and second discharge ports 203 and 204 may be selected according to actual production conditions, and for one polishing operation, neither the first discharge port 203 nor the second discharge port 204 is discharged to allow the silicon wafer to be sufficiently contacted with the polishing liquid to obtain necessary polishing, and the first discharge port 203 may be intermittently discharged with the gas and the second discharge port 204 may be intermittently discharged with the liquid in the intermediate stage of polishing to avoid excessive polishing of the edge of the silicon wafer.
In order to be able to accurately control the first and second discharge ports 203 and 204 according to actual production needs, it is preferable that, referring to fig. 2, the polishing head further comprises a controller 205, the controller 205 being for controlling the discharge of the first and second discharge ports 203 and 204.
In order to achieve rotational movement of the polishing head about its own axis and translational movement on the polishing pad, the polishing head 200 preferably further comprises a driver 206 for driving the polishing head in movement, as shown in fig. 2.
In order not to contaminate the polishing liquid, the gas is preferably an inert gas, for example, the gas may be nitrogen.
In a second aspect, referring to fig. 4, an embodiment of the present invention provides a polishing apparatus 300, the polishing apparatus 300 comprising the polishing head 200 according to the first aspect.
It should be noted that: the technical schemes described in the embodiments of the present invention may be arbitrarily combined without any collision.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A polishing head, the polishing head comprising:
A head body;
an adsorption port provided on a lower surface of the head body, the adsorption port being for adsorbing a silicon wafer so that the silicon wafer can move together with the head body;
A first discharge port provided on a lower surface of the head main body, the first discharge port being provided outside the adsorption port in a radial direction for discharging a gas outside a circumferential direction of the silicon wafer when the silicon wafer is polished to reduce an amount of a polishing liquid near an edge of the silicon wafer,
Wherein the polishing head further comprises a driver for driving the polishing head to move, the driver is used for realizing the rotation movement and the translation movement of the polishing head around the self axis, the polishing head further comprises a second discharge port arranged on the lower surface of the head main body, the second discharge port is positioned between the adsorption port and the first discharge port along the radial direction and is used for discharging liquid at the circumferential outer side of the silicon wafer when the silicon wafer is polished so as to reduce the concentration of the polishing liquid near the edge of the silicon wafer,
The first and second discharge ports are configured to: in the initial stage of polishing, neither the first discharge port nor the second discharge port is discharged; the first discharge port is intermittently discharged with gas and the second discharge port is discharged with liquid at an intermediate stage of polishing.
2. The polishing head according to claim 1, wherein the liquid is deionized water or a strong lye, wherein the strong lye has a Ph value of greater than 11.
3. A polishing head according to claim 1, wherein said polishing head comprises a plurality of said first discharge ports arranged in a circumferential direction of said lower surface of said head main body.
4. A polishing head according to claim 1, wherein said polishing head comprises a plurality of said second discharge ports arranged in a circumferential direction of said lower surface of said head main body.
5. The polishing head of claim 1,2, or 4, further comprising a controller for controlling the discharge of the first and second discharge ports.
6. A polishing head according to any one of claims 1 to 4, wherein the gas is an inert gas.
7. A polishing apparatus, characterized in that the polishing apparatus comprises the polishing head according to any one of claims 1 to 6.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211713309.6A CN115890478B (en) | 2022-12-29 | 2022-12-29 | Polishing heads and polishing equipment |
| TW112105939A TWI855563B (en) | 2022-12-29 | 2023-02-18 | Polishing heads and polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211713309.6A CN115890478B (en) | 2022-12-29 | 2022-12-29 | Polishing heads and polishing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115890478A CN115890478A (en) | 2023-04-04 |
| CN115890478B true CN115890478B (en) | 2024-11-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211713309.6A Active CN115890478B (en) | 2022-12-29 | 2022-12-29 | Polishing heads and polishing equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115890478B (en) |
| TW (1) | TWI855563B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050109091A (en) * | 2004-05-13 | 2005-11-17 | 삼성전자주식회사 | Apparatus for polishing a substrate |
| CN112677033A (en) * | 2020-12-03 | 2021-04-20 | 上海新昇半导体科技有限公司 | Polishing head, chemical mechanical polishing device and chemical mechanical polishing method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100335485B1 (en) * | 1999-07-02 | 2002-05-04 | 윤종용 | Chemical-mechanical polishing apparatus and method |
| KR20070028189A (en) * | 2005-09-07 | 2007-03-12 | 동부일렉트로닉스 주식회사 | Polishing Pad Conditioner |
| WO2013031111A1 (en) * | 2011-09-01 | 2013-03-07 | 信越半導体株式会社 | Silicon wafer polishing method and abrasive |
| JP5967040B2 (en) * | 2013-09-11 | 2016-08-10 | 信越半導体株式会社 | Mirror polished wafer manufacturing method |
| JP6304349B1 (en) * | 2016-11-15 | 2018-04-04 | 株式会社Sumco | Wafer edge polishing apparatus and method |
| CN108908066A (en) * | 2018-07-18 | 2018-11-30 | 江阴大手印精密材料科技发展有限公司 | A kind of polishing wafer device |
| JP7511417B2 (en) * | 2020-08-31 | 2024-07-05 | 株式会社Ｓｃｒｅｅｎホールディングス | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
| CN114473842A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | A grinding disc, chemical mechanical polishing equipment, system and method |
| CN113579991B (en) * | 2021-09-27 | 2021-12-21 | 西安奕斯伟硅片技术有限公司 | A final polishing method and system for a silicon wafer, and a silicon wafer |
-
2022
- 2022-12-29 CN CN202211713309.6A patent/CN115890478B/en active Active
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2023
- 2023-02-18 TW TW112105939A patent/TWI855563B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050109091A (en) * | 2004-05-13 | 2005-11-17 | 삼성전자주식회사 | Apparatus for polishing a substrate |
| CN112677033A (en) * | 2020-12-03 | 2021-04-20 | 上海新昇半导体科技有限公司 | Polishing head, chemical mechanical polishing device and chemical mechanical polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI855563B (en) | 2024-09-11 |
| TW202327796A (en) | 2023-07-16 |
| CN115890478A (en) | 2023-04-04 |
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