CN115911173B - A novel silicon carbide device based on laser graphitization technology and preparation method - Google Patents
A novel silicon carbide device based on laser graphitization technology and preparation method Download PDFInfo
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- CN115911173B CN115911173B CN202211439666.8A CN202211439666A CN115911173B CN 115911173 B CN115911173 B CN 115911173B CN 202211439666 A CN202211439666 A CN 202211439666A CN 115911173 B CN115911173 B CN 115911173B
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 53
- 238000005516 engineering process Methods 0.000 title claims abstract description 30
- 238000005087 graphitization Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention belongs to the technical field of semiconductor device preparation, and discloses a novel silicon carbide device based on a laser graphitization technology and a preparation method thereof, wherein the novel silicon carbide device comprises a high-resistance silicon carbide single crystal wafer, a silicon dioxide protective layer, a metal electrode, a connecting electrode and a lead electrode; the metal electrode is positioned inside the high-resistance silicon carbide single crystal wafer; the silicon dioxide protective layer is arranged around the metal electrode and covers the upper surface of the high-resistance silicon carbide single crystal wafer in the area where the non-metal electrode is located, so that the high-resistance silicon carbide single crystal wafer and the metal electrode are guaranteed to be on the same plane, the connecting electrode is arranged on the metal electrode, so that the connecting electrode and the silicon dioxide protective layer are guaranteed to be on the same plane, and the lead electrode is arranged on the upper surfaces of the connecting electrode and the silicon dioxide protective layer. The invention designs a novel silicon carbide device, provides an effective and simple process manufacturing technology, solves the preparation and performance problems of silicon carbide-based high-energy particles and a ray detector, and realizes the development of the novel silicon carbide radiation detector.
Description
Technical Field
The invention belongs to the technical field of semiconductor device preparation, and relates to a novel silicon carbide device based on a laser graphitization technology and a preparation method thereof.
Background
The silicon carbide is a third generation wide band gap semiconductor material, the band gap is 3.2eV, the breakdown electric field can reach 2.2MV/cm and is obviously higher than that of a silicon-based material, and the electron saturation speed is 2.0 multiplied by 10 7 cm/s and can reach 2 times of that of silicon, so that the silicon carbide device can bear higher working voltage, has reduced carrier drift time, lower carrier recombination probability and higher time resolution than the silicon-based device, and is an ideal material for preparing a semiconductor detector. The silicon carbide devices prepared at present are all based on planar structures and are mainly prepared by adopting a method based on homoepitaxy of silicon carbide single crystals. The detector energy resolution of the device is high under the condition of full deposition, but the voltage required by full depletion of an epitaxial layer is large, and a high-quality epitaxial substrate is expensive and difficult to obtain. 2. Compared with an epitaxially grown silicon carbide device, the silicon carbide single crystal device has lower cost, but the carrier collection distance is too long, and if the sample is thinned to shorten the collection distance, the problems of surface defects and self-support are also required to be solved. With the increasing of the requirements on the performance of semiconductor detectors, the traditional two-dimensional structure is insufficient to meet the scientific research requirements, and the three-dimensional silicon carbide device adopting the laser etching technology has the advantages of low processing cost, high etching rate, controllable carrier collection distance, diversified structure and the like. After laser processing treatment, the silicon carbide single crystal sample can form a layer of graphite at an etching interface, and a metal electrode contacted with the graphite is in ohmic contact. Therefore, the invention innovatively provides a novel silicon carbide device based on a laser graphitization technology and a preparation method thereof.
Disclosure of Invention
The invention aims to provide a novel silicon carbide device based on a laser graphitization technology and a preparation method thereof, aiming at a plurality of technical problems in the process of preparing silicon carbide high-energy particles or a ray detector.
The technical scheme of the invention is as follows:
a novel silicon carbide device based on a laser graphitization technology comprises a high-resistance silicon carbide single crystal wafer 1, a silicon dioxide protective layer 2, a metal electrode 3, a connecting electrode 4 and a lead electrode 5;
the high-resistance silicon carbide single crystal wafer 1 is of a main structure;
the metal electrode 3 is positioned in the high-resistance silicon carbide single crystal wafer 1;
the silicon dioxide protective layer 2 is arranged around the metal electrode 3 and covers the upper surface of the high-resistance silicon carbide single crystal chip 1 in the area where the non-metal electrode 3 is positioned, so that the high-resistance silicon carbide single crystal chip 1 and the metal electrode 3 are ensured to be on the same plane;
The connecting electrode 4 is positioned on the metal electrode 3, so that the connecting electrode 4 and the silicon dioxide protective layer 2 are in the same plane;
the lead electrode 5 is located on the upper surfaces of the connection electrode 4 and the silicon oxide protective layer 2.
The preparation method of the novel silicon carbide device based on the laser graphitization technology comprises the following steps:
Step 1, preparing a through hole array on a high-resistance silicon carbide single crystal wafer 1 by adopting pulse laser, wherein the diameter of the through hole is 1-500 mu m, cathodes and anode arrays are alternately arranged, the interval between anodes in the same row is 5-300 mu m, the interval between cathodes in the same row is 5-300 mu m, and the interval between adjacent cathodes and anodes is 10-800 mu m;
step 2, using mixed solution of hydrofluoric acid and deionized water to ultrasonically process for 5-20 min, and removing byproducts after laser processing;
Step 3, preparing a metal electrode 3 in the through hole by using an electrochemical deposition metal technology, and simultaneously enabling the electrochemical deposition metal electrode 3 and the surface of the high-resistance silicon carbide single crystal wafer 1 to be on the same plane by adopting a chemical mechanical polishing technology;
step 4, depositing a 10 nm-600 nm silicon dioxide protective layer 2 on the surface of the high-resistance silicon carbide single crystal wafer 1 by adopting a microwave plasma chemical vapor deposition technology;
Step 5, using a photoetching technology to open a window at the position with the through hole, and etching the silicon dioxide protective layer 2 by adopting hydrofluoric acid solution;
Step 6, preparing a connecting electrode 4 by adopting a thermal evaporation or electron beam evaporation method, wherein the thickness is not less than the thickness of deposited silicon dioxide, and then adopting a CMP technology to ensure that the connecting electrode 4 and the silicon dioxide layer 2 keep the same height;
and 7, manufacturing the lead electrode 5 by adopting a photoetching technology.
The invention has the beneficial effects that the invention designs a novel silicon carbide device structure and a preparation method based on the laser graphitization technology, and provides an effective and simple process manufacturing technology, thereby solving the preparation and performance problems of silicon carbide-based high-energy particles and a ray detector and realizing the development of a novel silicon carbide radiation detector.
Drawings
Fig. 1 is a schematic structural diagram of a novel silicon carbide device based on laser graphitization.
Fig. 2 is a structural top view of a novel silicon carbide device based on laser graphitization.
In the figure, 1 high-resistance silicon carbide monocrystal, 2 silicon dioxide protective layer, 3 metal electrode, 4 connecting electrode and 5 lead electrode.
Detailed Description
The following describes the embodiments of the present invention further with reference to the technical scheme and the accompanying drawings.
Example 1
The embodiment provides a novel silicon carbide device based on a laser graphitization technology and a preparation method thereof, and the novel silicon carbide device comprises the following process steps:
step 1, selecting a high-resistance silicon carbide single crystal wafer 1 with the thickness of 350 mu m and the surface of 5mm square;
step 2, on the high-resistance silicon carbide single crystal wafer 1, adopting a plurality of times of changing the focus of laser processing equipment to manufacture a through hole with high true width ratio, wherein the diameter of the through hole is 50um;
Step3, cleaning the processed sample by adopting hydrofluoric acid solution;
step 4, filling the through holes with metal electrodes 3 by using an electrochemical electrode metal technology, and then removing redundant metal by using a CMP technology;
And 5, depositing a silicon dioxide protective layer 2 on the upper and lower surfaces of the high-resistance silicon carbide single crystal wafer 1 by utilizing a microwave plasma chemical vapor deposition technology, wherein the thickness is 200nm. Wherein, the upper surface is photoetched, windows are opened above the metal electrode 3, and then hydrofluoric acid solution is adopted to etch the silicon dioxide protective layer 2, so that the upper surface of the metal electrode 3 is etched to the same height;
And 6, carrying out metal deposition at the window by using an electron beam deposition method to prepare the connecting electrode 4, wherein the thickness is not less than 200nm, and then removing redundant metal on the upper surface of the silicon dioxide protective layer 2 by adopting a CMP technology.
And 7, connecting electrodes on the silicon dioxide protective layer 2 by using a photoetching method to manufacture the lead electrode 5.
Claims (1)
1. A silicon carbide device based on a laser graphitization technology comprises a high-resistance silicon carbide single crystal wafer (1), a silicon dioxide protective layer (2), a metal electrode (3), a connecting electrode (4) and a lead electrode (5);
the high-resistance silicon carbide single crystal wafer (1) is of a main structure;
the metal electrode (3) is positioned in the high-resistance silicon carbide single crystal wafer (1);
The silicon dioxide protective layer (2) is arranged around the metal electrode (3) and covers the upper surface of the high-resistance silicon carbide single crystal wafer (1) in the area where the non-metal electrode (3) is located, so that the high-resistance silicon carbide single crystal wafer (1) and the metal electrode (3) are guaranteed to be on the same plane;
the connecting electrode (4) is positioned on the metal electrode (3), so that the connecting electrode (4) and the silicon dioxide protective layer (2) are ensured to be on the same plane;
The lead electrode (5) is positioned on the upper surfaces of the connecting electrode (4) and the silicon dioxide protective layer (2);
The method is characterized by comprising the following steps of:
Step 1, preparing a through hole array on a high-resistance silicon carbide single crystal wafer (1) by adopting pulse laser, wherein the diameter of the through hole is 1-500 mu m, cathodes and anode arrays are alternately arranged, the spacing between anodes in the same row is 5-300 mu m, the spacing between cathodes in the same row is 5-300 mu m, and the spacing between adjacent cathodes and anodes is 10-800 mu m;
step 2, using mixed solution of hydrofluoric acid and deionized water to ultrasonically process for 5-20 min, and removing byproducts after laser processing;
step 3, preparing a metal electrode (3) in the through hole by using an electrochemical deposition metal technology, and simultaneously adopting a chemical mechanical polishing technology to enable the electrochemical deposition metal electrode (3) and the surface of the high-resistance silicon carbide single crystal wafer (1) to be on the same plane;
Step 4, depositing a 10 nm-600 nm silicon dioxide protective layer (2) on the surface of the high-resistance silicon carbide single crystal wafer (1) by adopting a microwave plasma chemical vapor deposition technology;
Step 5, using a photoetching technology to open a window at the position with the through hole, and etching the silicon dioxide protective layer (2) by adopting hydrofluoric acid solution;
Step 6, preparing a connecting electrode (4) by adopting a thermal evaporation or electron beam evaporation method, wherein the thickness is not less than the thickness of deposited silicon dioxide, and then adopting a CMP technology to ensure that the connecting electrode (4) and the silicon dioxide layer 2 keep the same height;
and 7, manufacturing the lead electrode (5) by adopting a photoetching technology.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211439666.8A CN115911173B (en) | 2022-11-17 | 2022-11-17 | A novel silicon carbide device based on laser graphitization technology and preparation method |
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| CN202211439666.8A CN115911173B (en) | 2022-11-17 | 2022-11-17 | A novel silicon carbide device based on laser graphitization technology and preparation method |
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| CN115911173A CN115911173A (en) | 2023-04-04 |
| CN115911173B true CN115911173B (en) | 2025-04-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101032034A (en) * | 2004-06-30 | 2007-09-05 | 克里公司 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
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| US20130288489A1 (en) * | 2009-05-15 | 2013-10-31 | Translith Systems, Llc | Method and Apparatus to Fabricate Vias in Substrates for Gallium Nitride MMICs |
| JP6245568B2 (en) * | 2012-06-01 | 2017-12-13 | 株式会社レーザーシステム | Laser processing method |
| CN108493292B (en) * | 2018-04-12 | 2020-06-09 | 大连理工大学 | Silicon carbide single crystal-based X-ray detector and preparation method thereof |
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| CN101032034A (en) * | 2004-06-30 | 2007-09-05 | 克里公司 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
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