CN115939931A - A semiconductor laser control system - Google Patents

Abstract

The present invention relates to the field of semiconductor laser control, in particular to a semiconductor laser control system that can provide 3-way voltage-controlled voltage source module output and 4-way voltage-controlled current source module output, with various voltage and current output combinations, which can be controlled by a host computer. To drive different types of lasers, the voltage-controlled voltage source and voltage-controlled current source in the design are relatively independent, which can realize the independent control of the magnitude and frequency of each voltage and current, and realize continuous output of voltage and current through specific processing circuits. With the characteristics of good output synchronization, the microprocessor control module with high-performance DSP computing processor as the core, through table look-up calculation, implements the control of the current value of each voltage-controlled current source and the voltage value of the voltage-controlled voltage source, which can control Semiconductor lasers achieve fast wavelength tuning in the nanosecond range.

Description

A semiconductor laser control system

technical field

The invention relates to the field of semiconductor laser control, in particular to a semiconductor laser control system.

Background technique

With the advantages of compact structure, good beam quality, long life and stable performance, semiconductor lasers are widely used in communication, material processing and manufacturing, military, medical and other fields. Laser equipment has a wide range of applications. Especially as a key optoelectronic device in Optical Coherence Tomography (OCT), the performance of semiconductor lasers is directly related to core technical indicators such as imaging resolution and detectable section depth of the OCT system.

The four-segment wide-tuning fast-sweep semiconductor laser includes: a semiconductor optical amplifier unit (SOA), two passive cavity regions A, a laser region B, a phase adjustment region C and a power amplification region D. While realizing the ultra-wide scanning frequency range of the laser chip, it can still ensure a sufficiently small dynamic linewidth and a sufficiently high side mode suppression ratio. By changing the injection current of the power amplification area D, the purpose of further increasing the output power can be achieved. Therefore, the four-segment wide-tuning fast-sweep semiconductor laser can provide a high-performance laser light source and application system environment for the new generation of OCT systems.

At present, the tuning realization principles of tunable semiconductor lasers are mainly divided into three types: voltage/current tuning, temperature tuning and mechanical tuning. The four-segment wide-tuning fast-sweep semiconductor laser adopts the voltage/current tuning method. Wavelength adjustment is by changing the bias voltage of the reverse PN junction of the two passive cavity regions A. When the applied voltage changes, it can affect the carrier accumulation density at the reverse biased PN junction, and then affect the passive cavity region A The refractive index of the material is adjusted to obtain a tunable comb reflectance spectrum. The lengths of the two passive cavity regions A can be different, so that the peak-to-peak value of the comb reflection spectrum is slightly different, which can produce a vernier effect and perform single longitudinal mode feedback on the laser light in the laser region B. By changing the voltages of the two passive cavity regions A respectively and utilizing the vernier effect, wide-range tuning and fast frequency-sweeping of the laser can be realized. The working principle of the phase adjustment area C is the same as that of the passive cavity area A at both ends. By changing the voltage applied to both ends of the adjustment area C, the overall phase of the middle part is adjusted, so that the wavelength peak of the lasing wavelength can be matched with the passive cavity at both ends. The peak of the lasing wavelength selected by the vernier effect in the body region A is aligned, thereby reducing the width of the lasing line.

However, the existing tunable laser control system does not have high precision and is unstable in controlling the wavelength, and the system cannot meet the use function of four-segment wide-tuning fast-sweeping semiconductor lasers, and cannot provide three independent voltage sources to control two passive cavities at the same time. Area A, a phase adjustment area C, three independent current sources respectively control the power amplifier D, the laser area B, the semiconductor optical amplifier unit SOA, and one semiconductor cooling chip control module. The current market urgently needs to solve this problem.

Contents of the invention

In view of this, an embodiment of the present invention provides a semiconductor laser control system, which realizes nanosecond-level fast wavelength tuning.

A semiconductor laser control system provided in an embodiment of the present invention includes a microprocessor control module, multiple independent DAC conversion modules, multiple independent voltage-controlled voltage source modules, and multiple independent voltage-controlled current sources module, multiple independent ADC conversion modules, multiple independent voltage acquisition modules, multiple independent current acquisition modules, temperature sampling feedback modules, and communication modules;

The microprocessor control module communicates with the host computer through the communication module, receives the control instructions of the host computer to control the semiconductor laser to work, and returns the working data information of the semiconductor laser to the host computer, wherein the The semiconductor laser includes a first passive cavity area, a second passive cavity area, a phase adjustment area, a laser area, a power amplifier, and a semiconductor optical amplification unit;

The DAC conversion module is used to divide the voltage into a target number of analog voltages according to the control instructions of the microprocessor control module, and the analog voltage is used for the control voltage-controlled voltage source module or voltage-controlled current source of the semiconductor laser module;

The voltage-controlled voltage source module is used to change the output voltage according to the difference of the input voltage signal, and use the output voltage to control the passive cavity area and the phase adjustment area of the semiconductor laser to;

The voltage-controlled current source module is used to change the output current according to the difference of the input voltage signal, and the output current is used to control the power amplifier, the laser area and the semiconductor optical amplification unit of the semiconductor laser;

The ADC conversion module is used to convert the voltage signal and current signal collected by the voltage acquisition module and the current acquisition module into digital signals of a target quantity, and send the digital signals to the microprocessor control module ;

The current collection module is used to collect the current signal of the circuit, and convert the current signal into a voltage signal and transmit it to the ADC conversion module;

The voltage acquisition module is used to collect the voltage signal of the circuit where it is located, and transmit the voltage signal to the ADC conversion module;

The temperature sampling feedback module is electrically connected to the microprocessor control module and is used to actually monitor the temperature of the semiconductor laser;

The communication module is used for communication between the microprocessor control module and the host computer.

As an optional solution, the multiple independent DAC conversion modules include 7 independent DAC conversion modules, which are respectively the first DAC conversion module, the second DAC conversion module, the third DAC conversion module, and the fourth DAC conversion module. A conversion module, a fifth DAC conversion module, a sixth DAC conversion module and a seventh DAC conversion module;

The multiple independent voltage-controlled voltage source modules include 3 independent voltage-controlled voltage source modules, which are respectively a first voltage-controlled voltage source module, a second voltage-controlled voltage source module and a third voltage-controlled voltage source module;

The multiple independent voltage-controlled current source modules are 3 independent voltage-controlled current source modules, which are respectively the first voltage-controlled current source module, the second voltage-controlled current source module and the third voltage-controlled current source module;

The multiple independent ADC conversion modules include 7 independent ADC conversion modules, which are respectively the first ADC conversion module, the second ADC conversion module, the third ADC conversion module, the fourth ADC conversion module, and the fifth ADC conversion module , the sixth ADC conversion module and the seventh ADC conversion module;

The multiple independent voltage acquisition modules are three independent voltage acquisition modules, which are respectively a first voltage acquisition module, a second voltage acquisition module and a third voltage acquisition module;

The multiple independent current acquisition modules are four independent current acquisition modules, which are respectively a first current acquisition module, a second current acquisition module, a third current acquisition module and a fourth current acquisition module.

As an optional solution, the first DAC conversion module is connected to the semiconductor optical amplification unit through the first voltage-controlled current source module, and the first analog voltage signal output by the first DAC conversion module controls the The first voltage-controlled current source module outputs a first tuning current signal to tune the semiconductor optical amplifying unit;

The second DAC conversion module is connected to the power amplifier through the second voltage-controlled current source module, and the second analog voltage signal output by the second DAC conversion module controls the second voltage-controlled current source module to output the first two tuning current signals to tune the power amplifier;

The third DAC conversion module is connected to the first passive cavity region through the first voltage-controlled voltage source module, and the third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled The voltage source module outputs a first tuning voltage signal to tune the first passive cavity region;

The fourth DAC conversion module is connected to the laser area through the third voltage-controlled current source module, and the fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output the first three tuning current signals to tune the laser zone;

The fifth DAC conversion module is connected to the phase adjustment area through the second voltage-controlled voltage source module, and the fifth analog voltage signal output by the fifth DAC conversion module controls the output of the second voltage-controlled voltage source module the second tuning voltage signal tunes the phase adjustment area;

The sixth DAC conversion module is connected to the second passive cavity region through the third voltage-controlled voltage source module, and the sixth analog voltage signal output by the sixth DAC conversion module controls the third voltage-controlled The voltage source module outputs a third tuning voltage signal to tune the second passive cavity region.

As an optional solution, the microprocessor control module controls the first voltage-controlled current source to output the first current through the first DAC conversion module, and the first current acquisition module acquires the first voltage Control the first current output by the current source and transmit the collected first current signal to the first ADC conversion module, the first current acquisition module and the first ADC conversion module convert the first current The signal is converted into a first digital signal and transmitted to the microprocessor control module;

The microprocessor control module controls the second voltage-controlled current source to output a second current through the second DAC conversion module, and the second current collection module collects the first current output from the second voltage-controlled current source. Two currents and transfer the collected second current signal to the second ADC conversion module, the second current acquisition module and the second ADC conversion module convert the second current signal into a second digital signal for transmission to the microprocessor control module;

The microprocessor control module controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module, and the first voltage acquisition module collects the first voltage outputted by the first voltage-controlled voltage source. a voltage and transmit the collected first voltage signal to the third ADC conversion module, and the first voltage acquisition module and the third ADC conversion module convert the first voltage signal into a third digital signal for transmission to the microprocessor control module;

The microprocessor control module controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module, and the third current collection module collects the first current output from the third voltage-controlled current source. Three currents and transfer the collected third current signal to the fourth ADC conversion module, the third current acquisition module and the fourth ADC conversion module convert the third current signal into a fourth digital signal for transmission to the microprocessor control module;

The microprocessor control module controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module, and the second voltage acquisition module collects the second voltage output from the second voltage-controlled voltage source. second voltage and transmit the collected second voltage signal to the fifth ADC conversion module, the second voltage acquisition module and the fifth ADC conversion module convert the second voltage signal into a fifth digital signal for transmission to the microprocessor control module;

The microprocessor control module controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module, and the third voltage acquisition module collects the third voltage output from the third voltage-controlled voltage source. Three voltages and transfer the collected third voltage signal to the sixth ADC conversion module, the third voltage acquisition module and the sixth ADC conversion module convert the third voltage signal into a sixth digital signal for transmission to the microprocessor control module.

As an optional solution, it also includes a thermistor for collecting the temperature of the semiconductor laser, a semiconductor cooling chip for adjusting the temperature of the semiconductor laser, and a semiconductor cooling control module for controlling the operation of the semiconductor cooling chip , the seventh DAC conversion module is controlled to be electrically connected to the semiconductor cooling chip through the semiconductor cooling control module, the fourth current collection module is electrically connected to the semiconductor cooling chip, and the seventh ADC conversion module is connected to the semiconductor cooling chip through the The fourth current acquisition module collects the cooling control current of the semiconductor cooling chip, the thermistor is packaged with the semiconductor laser and the semiconductor cooling chip as a whole, and the microprocessor control module passes the The temperature sampling feedback module acquires the temperature of the thermistor, the temperature sampling feedback module collects the die temperature of the semiconductor laser through the thermistor, and feeds back the measured temperature value to the microprocessor control module The microprocessor control module controls the voltage-controlled current source module to adjust the cooling control current of the semiconductor cooling chip according to the measured temperature value to adjust the cooling efficiency.

As an optional solution, it also includes a data storage module for storing the control data of the control system and a heat dissipation module for cooling the control system and maintaining a constant temperature working environment, the data storage module and the heat dissipation module are respectively connected with the The microprocessor control module is electrically connected.

As an optional solution, the semiconductor refrigeration control module includes an H-bridge drive circuit, the H-bridge drive circuit is electrically connected to the semiconductor refrigeration chip, and the H-bridge drive circuit is controlled by the seventh DAC conversion module The power supply current controls the refrigeration efficiency of the semiconductor refrigeration sheet.

As an optional solution, the heat dissipation module is an air-cooled radiator, and the air-cooled radiator includes a fan, a heat sink, and a heat pipe.

As an optional solution, the microprocessor control module includes a PGA programmable logic controller or an ARM processor.

As an optional solution, the semiconductor laser is a four-segment wide-tuned fast frequency-sweeping semiconductor laser.

The semiconductor laser control system provided in the embodiment of the present invention can provide 3-way voltage-controlled voltage source module output and 4-way voltage-controlled current source module output. There are various voltage and current output combinations, and different types of lasers can be driven through the control of the host computer 9. Laser, the voltage-controlled voltage source and voltage-controlled current source in the design are relatively independent, which can realize the independent control of the magnitude and frequency of each voltage and current, and realize the continuous output of voltage and current with good output synchronization through specific processing circuits and other characteristics, the microprocessor control module with high-performance DSP computing processor as the core, after table look-up calculation, implements the control of the current value of each voltage-controlled current source and the voltage value of the voltage-controlled voltage source, and can control the semiconductor laser to realize nanometer Fast wavelength tuning in seconds.

Description of drawings

Fig. 1 provides a structural block diagram of a semiconductor laser control system in an embodiment of the present invention;

2 is a schematic structural diagram of a temperature sampling feedback module in a semiconductor laser control system provided in an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a closed-loop temperature control function of a semiconductor refrigerating plate in a semiconductor laser control system provided in an embodiment of the present invention.

Reference signs: microprocessor control module 1, temperature sampling feedback module 2, communication module 3, thermistor 4, semiconductor cooling chip 5, semiconductor cooling control module 6, data storage module 7, heat dissipation module 8, upper computer 9, Wheatstone bridge circuit 211, instrument amplifier circuit 212, ADC conversion circuit 213, proportional integral circuit 214;

The first passive cavity area 11, the second passive cavity area 12, the phase adjustment area 13, the laser area 14, the power amplifier 15, and the semiconductor optical amplification unit 16;

The first DAC conversion module 21, the second DAC conversion module 22, the third DAC conversion module 23, the fourth DAC conversion module 24, the fifth DAC conversion module 25, the sixth DAC conversion module 26, and the seventh DAC conversion module 27;

A first voltage-controlled voltage source module 31, a second voltage-controlled voltage source module 32, and a third voltage-controlled voltage source module 33;

A first voltage-controlled current source module 41, a second voltage-controlled current source module 42, and a third voltage-controlled current source module 43;

The first ADC conversion module 51, the second ADC conversion module 52, the third ADC conversion module 53, the fourth ADC conversion module 54, the fifth ADC conversion module 55, the sixth ADC conversion module 56, and the seventh ADC conversion module 57;

The first voltage acquisition module 61, the second voltage acquisition module 62, the third voltage acquisition module 63;

The first current collection module 71 , the second current collection module 72 , the third current collection module 73 , and the fourth current collection module 74 .

Detailed ways

In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

The terms "first", "second", "third", "fourth" and the like in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily to describe specific sequence or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms "comprising" and "having", as well as any variations thereof, are intended to cover a non-exclusive inclusion, for example, a process, method, system, product or device comprising a sequence of steps or elements is not necessarily limited to the expressly listed instead, may include other steps or elements not explicitly listed or inherent to the process, method, product or apparatus.

A semiconductor laser control system provided in an embodiment of the present invention includes a microprocessor control module 1, multiple independent DAC conversion modules, multiple independent voltage-controlled voltage source modules, and multiple independent voltage-controlled current modules. Source module, multiple independent ADC conversion modules, multiple independent voltage acquisition modules, multiple independent current acquisition modules, temperature sampling feedback module 2 and communication module 3;

The microprocessor control module 1 communicates with the host computer 9 through the communication module 3, receives control instructions from the host computer 9 to control the operation of the semiconductor laser, and returns the working data information of the semiconductor laser to the host computer. 9. Microprocessor control module 1 can include FPGA programmable logic controller or ARM processor and related auxiliary circuits. It has powerful DSP computing capabilities. The control instructions for controlling the operation of semiconductor lasers can instruct examples to adjust laser output power and laser output. The phase, adjusting the laser output wavelength, controlling the cooling temperature of the semiconductor cooling sheet 5, etc. are not limited.

In this embodiment, the semiconductor laser may include a first passive cavity region 11, a second passive cavity region 12, a phase adjustment region 13, a laser region 14, a power amplifier 15, and a semiconductor optical amplification unit 16, but it needs to be explained Yes, this control system does not include the semiconductor laser, which is introduced here only for the convenience of explaining the connection and control relationship of each component of the control system, and will not be described in detail below.

The DAC conversion module is used to divide the voltage into a target number of analog voltages according to the control instruction of the microprocessor control module 1, and the analog voltage is used for the control voltage-controlled voltage source module or voltage-controlled current of the semiconductor laser. The source module and the DAC conversion module can use high-frequency DAC converters. Specifically, when controlling the four-segment semiconductor laser, 7 independent DAC conversion modules can be selected. The target number is 2 ¹⁴ , which is 16384, and the 7 channels are independent of each other. The DAC conversion module can include more than 14-bit DAC conversion chip and its peripheral circuit, EMC filter circuit, and can divide 0~3.3V (or 0~5.5V) into not less than 16384 parts according to the instruction of the microprocessor control module 1 An analog voltage, the output analog voltage is used to control a voltage-controlled voltage source module or a voltage-controlled current source module.

The voltage-controlled voltage source module is used to change the output voltage according to the difference of the input voltage signal, and use the output voltage to control the first passive cavity region 11, the second passive cavity region 12, and the phase adjustment of the semiconductor laser Zone 13, the voltage-controlled voltage source module can include a precision operational amplifier circuit, a negative feedback circuit composed of precision resistors, a MOS tube output circuit, and an acceleration circuit;

The voltage-controlled current source module is used to change the output current according to the difference of the input voltage signal, and the output current is used to control the power amplifier 15, the laser region 14 and the semiconductor optical amplification unit 16 of the semiconductor laser, and the voltage-controlled current source module can be Including precision operational amplifier circuit, negative feedback circuit composed of precision resistors, MOS tube output circuit, acceleration circuit;

The ADC conversion module is used to convert the voltage signal and current signal collected by the voltage acquisition module and the current acquisition module into digital signals of a target quantity, and send the digital signals to the microprocessor control module 1. The ADC conversion module can use a high-frequency converter. Specifically, the ADC conversion module can include more than 14-bit ADC conversion chips, peripheral circuits, and integrated operational amplifier circuits. The target number is 2. ¹⁴ is 16384. The voltage acquisition module 1. The voltage signal and current signal collected by the current acquisition module are converted into digital signals ranging from 0 to 16384, and the digital signals are sent to the microprocessor control module 1 .

The current acquisition module is used to collect the current signal of the circuit where it is located, and convert the current signal into a voltage signal and transmit it to the ADC conversion module. Specifically, the current acquisition module may include a precision sampling resistor, a voltage follower, a differential operational amplifier, Instrumentation amplifier, adding operator.

The voltage acquisition module is used to acquire the voltage signal of the circuit where it is located, and transmits the voltage signal to the ADC conversion module. The voltage acquisition module may include a voltage follower, a differential operational amplifier, an instrumentation amplifier, and an adding operator.

As shown in Fig. 2, the temperature sampling feedback module 2 is electrically connected with the microprocessor control module 1 for actually monitoring the temperature of the semiconductor laser, and the temperature sampling feedback module 2 may include a Wheatstone bridge circuit 211, an instrument amplifier Circuit 212, proportional integral circuit 214, ADC conversion circuit 213, EMC filter circuit (not shown in the figure);

The communication module 3 is used for the communication between the microprocessor control module 1 and the upper computer 9, and the communication module 3 can transmit connectors of different signals, including conversion of communication networks such as RS-232 and RS-422/485 signals, so that The drive, control, and serial information of the actuation components in the system architecture are compatible, and those skilled in the art can flexibly choose as long as they meet the requirements of the usage scenarios, and there is no limitation on this.

The upper computer 9 is a computer that can directly issue control commands, which is convenient for the staff to control and manage the control system, and an industrial computer can be used, which is not limited.

As shown in Figure 1, the semiconductor laser control system provided in the embodiment of the present invention, taking the four-segment wide-tuning fast-sweeping semiconductor laser as an example, each device of the semiconductor laser control system can have the following configurations, which is convenient to meet the control requirements. Ground, the multiple independent DAC conversion modules include 7 independent DAC conversion modules, which are respectively the first DAC conversion module 21, the second DAC conversion module 22, the third DAC conversion module 23, and the fourth DAC conversion module 24 , the fifth DAC conversion module 25, the sixth DAC conversion module 26 and the seventh DAC conversion module 27, the multiple independent voltage-controlled voltage source modules include 3 independent voltage-controlled voltage source modules, respectively the first voltage Controlled voltage source module 31, second voltage-controlled voltage source module 32 and third voltage-controlled voltage source module 33, multiple independent voltage-controlled current source modules are 3 independent voltage-controlled current source modules, respectively the first voltage-controlled current source module The control current source module 41, the second voltage control current source module 42 and the third voltage control current source module 43, the multiple independent ADC conversion modules include 7 independent ADC conversion modules, respectively the first ADC conversion module 51. The second ADC conversion module 52, the third ADC conversion module 53, the fourth ADC conversion module 54, the fifth ADC conversion module 55, the sixth ADC conversion module 56 and the seventh ADC conversion module 57, the multiple channels are independent of each other The voltage acquisition module is 3 independent voltage acquisition modules, which are respectively the first voltage acquisition module 61, the second voltage acquisition module 62 and the third voltage acquisition module 63, and the multiple independent current acquisition modules are 4 independent current acquisition modules. The current acquisition modules are respectively a first current acquisition module 71, a second current acquisition module 72, a third current acquisition module 73 and a fourth current acquisition module 74.

In some embodiments, the first DAC conversion module 21 is connected to the semiconductor optical amplification unit 16 through the first voltage-controlled current source module 41, and the first analog voltage signal output by the first DAC conversion module 21 Controlling the first voltage-controlled current source module 41 to output a first tuning current signal to tune the semiconductor optical amplifier, the second DAC conversion module 22 communicates with the power amplifier 15 through the second voltage-controlled current source module 42 connected, the second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15, and the third DAC conversion module 23 passes The first voltage-controlled voltage source module 31 is connected to the first passive cavity area 11, and the third analog voltage signal output by the third DAC conversion module 23 controls the first voltage-controlled voltage source module 31 to output The first tuning voltage signal tunes the first passive cavity region 11, the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43, and the fourth DAC conversion module 24 The fourth analog voltage signal output controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser area 14, and the fifth DAC conversion module 25 passes through the second voltage-controlled voltage source module 32 Connected to the phase adjustment area 13, the fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal to tune the phase adjustment area, the The sixth DAC conversion module 26 is connected to the second passive cavity region 12 through the third voltage-controlled voltage source module 33, and the sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third The voltage-controlled voltage source module 33 outputs a third tuning voltage signal to tune the second passive cavity region 12 .

In some embodiments, the microprocessor control module 1 controls the first voltage-controlled current source to output the first current through the first DAC conversion module 21, and the first current acquisition module 71 acquires the first The first current output by the voltage-controlled current source and the collected first current signal are transmitted to the first ADC conversion module 51, and the first current collection module 71 and the first ADC conversion module 51 convert the first current signal to the first ADC conversion module 51. The first current signal is converted into a first digital signal and transmitted to the microprocessor control module 1, and the microprocessor control module 1 controls the second voltage-controlled current source to output the first digital signal through the second DAC conversion module 22. Two currents, the second current collection module 72 collects the second current output by the second voltage-controlled current source and transmits the collected second current signal to the second ADC conversion module 52, the first The second current acquisition module 72, the second ADC conversion module 52 converts the second current signal into a second digital signal and transmits it to the microprocessor control module 1, and the microprocessor control module 1 passes through the second digital signal The three DAC conversion module 23 controls the first voltage-controlled voltage source to output the first voltage, and the first voltage acquisition module 61 collects the first voltage output by the first voltage-controlled voltage source and collects the obtained first voltage. The voltage signal is transmitted to the third ADC conversion module 53, and the first voltage acquisition module 61 and the third ADC conversion module 53 convert the first voltage signal into a third digital signal and transmit it to the microprocessor Control module 1, the microprocessor control module 1 controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module 24, and the third current acquisition module 73 acquires the third voltage-controlled current source The third current output by the current source and the acquired third current signal are transmitted to the fourth ADC conversion module 54, and the third current acquisition module 73 and the fourth ADC conversion module 54 convert the third current signal to the fourth ADC conversion module 54. The three current signals are converted into fourth digital signals and transmitted to the microprocessor control module 1, and the microprocessor control module 1 controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module 25 , the second voltage acquisition module 62 acquires the second voltage output by the second voltage-controlled voltage source and transmits the acquired second voltage signal to the fifth ADC conversion module 55, the second voltage The acquisition module 62 and the fifth ADC conversion module 55 convert the second voltage signal into a fifth digital signal and transmit it to the microprocessor control module 1, and the microprocessor control module 1 passes the sixth DAC The conversion module 26 controls the third voltage-controlled voltage source to output a third voltage, and the third voltage acquisition module 63 collects the third voltage output by the third voltage-controlled voltage source and collects the obtained third voltage signal Delivered to the sixth ADC conversion module 56, the third voltage acquisition module 63 and the sixth ADC conversion module 56 convert the third voltage signal into a sixth digital signal and transmit it to the microprocessor control module 1.

As shown in FIG. 3 , in some embodiments, it also includes a thermistor 4 for collecting the temperature of the semiconductor laser, a semiconductor cooling chip 5 for adjusting the temperature of the semiconductor laser, and a semiconductor cooling chip for controlling the temperature of the semiconductor laser. 5 working semiconductor refrigeration control module 6, the semiconductor refrigeration control module 6 is used to adjust the refrigeration power of the semiconductor refrigeration chip 5 according to the instructions of the microprocessor control module 1, and the seventh DAC conversion module 27 controls through The semiconductor cooling control module 6 is electrically connected to the semiconductor cooling chip 5, the fourth current collection module 74 is electrically connected to the semiconductor cooling chip 5, and the seventh ADC conversion module 57 passes through the fourth The current collection module 74 collects the cooling control current of the semiconductor cooling chip 5, the thermistor 4 is packaged with the semiconductor laser and the semiconductor cooling chip 5, and the microprocessor control module 1 passes through the semiconductor cooling chip 5. The temperature sampling feedback module 2 acquires the temperature of the thermistor 4, the temperature sampling feedback module 2 collects the die temperature of the semiconductor laser through the thermistor 4, and feeds back the measured temperature value to the micro The processor control module 1, the microprocessor control module 1 controls the voltage-controlled current source module to adjust the cooling control current of the semiconductor cooling chip 5 to adjust the cooling efficiency according to the measured temperature value.

In some embodiments, the semiconductor refrigeration control module 6 includes an H-bridge driving circuit, the H-bridge driving circuit is electrically connected to the semiconductor refrigeration sheet 5, and the output current is provided through the voltage-variable current source module, and the voltage-controlled voltage source is used to provide the output current. The module provides an output voltage, and the seventh DAC conversion module 27 controls the power supply current of the H-bridge drive circuit to control the cooling efficiency of the semiconductor cooling chip 5 .

In some embodiments, the semiconductor laser control system also includes a data storage module 7 for storing control system control data and a heat dissipation module 8 for cooling the control system and maintaining a constant temperature working environment, the data storage module 7, the The heat dissipation modules 8 are respectively electrically connected to the microprocessor control module 1. In this embodiment, the data storage module 7 can use a FLASH memory, which can be flexibly selected by those skilled in the art, and is not limited thereto.

In some embodiments, the heat dissipation module 8 is an air-cooled radiator, and the air-cooled radiator may include a fan, a heat sink, and a heat pipe, which can be flexibly selected by those of ordinary skill in the art, and is not limited thereto.

Example 1

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when performing the relationship operation between the combination of recording current and voltage and the output wavelength and power.

The microprocessor control module 1 changes the current of the voltage-controlled current source module and the voltage of the voltage-controlled voltage source module through the DAC conversion module, and then respectively controls the two passive cavity areas, the phase adjustment area 13, and the laser area of the four-segment laser. 14. Power amplifier 15, semiconductor optical amplification unit 16, specifically, the first DAC conversion module 21 is connected to the semiconductor optical amplification unit 16 through the first voltage-controlled current source module 41, and the first DAC conversion The first analog voltage signal output by the module 21 controls the first voltage-controlled current source module 41 to output the first tuning current signal to tune the semiconductor optical amplifier, and the second DAC conversion module 22 passes the second voltage-controlled current The source module 42 is connected to the power amplifier 15, and the second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15, The third DAC conversion module 23 is connected to the first passive cavity region 11 through the first voltage-controlled voltage source module 31, and the third analog voltage signal output by the third DAC conversion module 23 controls the The first voltage-controlled voltage source module 31 outputs a first tuning voltage signal to tune the first passive cavity region 11, and the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43 , the fourth analog voltage signal output by the fourth DAC conversion module 24 controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser area 14, and the fifth DAC conversion module 25 passes the The second voltage-controlled voltage source module 32 is connected to the phase adjustment area 13, and the fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal Tuning the phase adjustment area 13, the sixth DAC conversion module 26 is connected to the second passive cavity area 12 through the third voltage-controlled voltage source module 33, and the output of the sixth DAC conversion module 26 is The sixth analog voltage signal controls the third voltage-controlled voltage source module 33 to output a third tuning voltage signal to tune the second passive cavity region 12 .

The current value is represented by 14-bit AD value, and the adjustment range of each current is 100-16000. The voltage value is represented by 14-bit AD value, and the adjustment range of each voltage is 100-16000. The voltage step of the two passive cavity regions is 50, the voltage step of the phase adjustment region 13 is 50, the injection current step of the laser region 14 is 50, the injection current step of the power amplifier 15D is 50, and the semiconductor optical amplification unit 16 The injection step current step is 50. This step fixes the voltage or current of any five control areas in turn, and the other current or voltage value increases sequentially from small to large. When the voltage or current value in the control area of any five DAC conversion modules is fixed, and the other voltage or current value is gradually changed, the corresponding laser output wavelength has repetitive and turning jumps. There are multiple sets of voltage or current combinations in each control zone corresponding to the same wavelength and the same power. Organize and analyze the data, and record the output wavelength and power value of the laser corresponding to each current and voltage combination in order according to the wavelength from small to large, and the power from small to large. Among them, only one corresponding combination data is taken for the same wavelength and power combination.

Example 2

The semiconductor laser control system provided in the embodiment of the present invention has an output power calibration function, and the following operations can be performed when calibrating the output current and voltage of the control system.

The semiconductor laser is connected with the semiconductor laser control system, when entering the calibration function, the microprocessor control module 1 controls the output current of the first voltage-controlled current source module 41 through the first DAC conversion module 21, and the first current acquisition module 71 collects the first The voltage-controlled current source module 41 outputs the current and transmits the signal to the first ADC conversion module 51 . The first current acquisition module 71 and the first ADC conversion module 51 convert the current signal into a digital signal and transmit it to the microprocessor control module 1 .

The value that the first ADC conversion module 51 transmits to the microprocessor control module 1 calibrates the current output by the first voltage-controlled current source module 41, for example: the DAC conversion chip in the first DAC conversion module 21 is 14 bits, and the output voltage value is 0-5V, the resolution is 0.3mV, that is, when the microcontroller processor outputs 0 to the first DAC conversion module 21, the first DAC conversion module 21 outputs 0V to the first voltage-controlled current source module 41, when the microcontroller processor module When the first DAC conversion module 21 outputs 1, the first DAC conversion module 21 outputs 0.3mV to the first voltage-controlled current source module 41, the measurement range of the first ADC conversion module 51 is 0-100mA, and the ADC conversion chip is 14 bits ( That is, 2 ¹⁴ is 16384), and the resolution is 100÷16384=0.0061mA.

When the microprocessor control module 1 outputs X to the first DAC conversion module 21, the first ADC conversion module 51 outputs 16 to the microprocessor control module 1 (16+0.0061=0.0976≈

0.1mA), at this time, the calibration program of the microprocessor control module 1 considers that when the microprocessor control module 1 outputs X to the first DAC conversion module 21, the output of the first voltage-controlled current source module 41 is 0.1mA. Similarly, the output current of the first voltage-controlled current source module 41 is calibrated in steps of 0.1 mA from 0 mA to the maximum current of the semiconductor optical amplifier unit 16 .

The microprocessor control module 1 controls the output voltage of the first voltage-controlled voltage source module 31 through the third DAC conversion module 23, and the first voltage acquisition module 61 collects the voltage output by the first voltage-controlled voltage source module 31 and transmits the signal to the third ADC conversion module 53. The third voltage acquisition module 63 and the third ADC conversion module 53 convert the voltage signal into a digital signal and transmit it to the microprocessor control module 1 . For example: the DAC conversion chip in the third DAC conversion module 23 is 16 (65536), the output voltage value is 0-5V, and the resolution is 5+1000÷6536=0.076mV, that is, the micro-control processor module converts the third DAC When the module 23 outputs 0, the third DAC conversion module 23 outputs 0V to the first voltage-controlled voltage source module 31; The voltage-controlled voltage source outputs 0.076mV. The measurement range of the third ADC conversion module 53 is 0-5V, the ADC conversion chip is 16 bits (65536), and the resolution is 5+1000÷65536=0.076mV. When the microprocessor control module 1 outputs X to the third DAC conversion module 23, when the third DAC conversion module 23 outputs 13 to the microprocessor control module 1 (13+0.076=0.988≈1mV), the microprocessor control module The calibration program of 1 considers that when the microprocessor control module 1 outputs X to the third DAC conversion module 23, the output of the third voltage-controlled voltage source module 33 is 1mV, and similarly starts from 0V until the second passive cavity area 12 reaches the maximum Calibrate the output voltage of the voltage-controlled voltage source 1 with a step value of 1mV until the current is reached.

It can be understood that the calibration of the output current values of the second voltage-controlled current source module 42, the third voltage-controlled current source module 43, and the semiconductor refrigeration control module 6 is carried out with reference to the first voltage-controlled current source in the same way, and the second voltage-controlled voltage The calibration of the output voltage values of the first voltage-controlled voltage source and the third voltage-controlled voltage source is the same as that of the first voltage-controlled voltage source, and will not be repeated here.

Example 3

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when displaying the output current, voltage, and power of each channel.

With reference to Embodiment 2, it can be seen that the semiconductor laser control system has a current acquisition module, a voltage acquisition module, and an ADC conversion module, which can collect the output current value of each voltage variable current source, the output voltage value of the voltage variable voltage source, and the output of the semiconductor refrigeration control module 6 current value. In the case of static output or low-speed frequency sweeping, the current acquisition module, voltage acquisition module, and ADC conversion module can collect the current value output by each voltage variable current source, the voltage value output by the voltage variable voltage source, and the semiconductor laser control module in real time. Output the current value and feed back the data to the upper computer 9 operating system. In the case of high-speed frequency sweeping, the real-time acquisition of the current acquisition module, voltage acquisition module, and ADC conversion module will affect the frequency sweep speed. At this time, the current and voltage acquisition functions are turned off. The current value output by each variable current source module, the voltage value output by the variable voltage source module and the output current value of the semiconductor refrigeration control module 6 will be fed back to the host computer 9 with the values calibrated with reference to the second embodiment. Of course, in order to ensure the accuracy of the feedback data, a calibration of the output current and voltage of the reference embodiment 2 can be performed before the high-speed frequency sweep operation, and details will not be repeated here.

Example 3

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when performing semiconductor laser temperature calibration.

At present, most semiconductor lasers use a thermistor 4 as a temperature sensor for monitoring the temperature of the semiconductor laser, and the thermistor 4 is packaged together with the semiconductor cooling plate 5 and the semiconductor laser. The temperature measurement principle of the temperature sampling feedback module 2 of the semiconductor laser control system of the present invention is that the thermistor 4 in the semiconductor laser and other precision resistors form a Wheatstone bridge circuit 211 . When the temperature of the semiconductor laser changes, the resistance of the thermistor 4 changes, causing the potential of the Wheatstone bridge circuit 211 to change. The potential change signal is converted into a digital signal between 0 and 4096 after being converted by the instrument amplifier circuit, proportional integral circuit, and ADC conversion circuit. The temperature sampling feedback module 2 collects the voltage signal and converts the voltage signal into a 12-bit digital signal corresponding to 0~4096. In order to achieve precise temperature control, a correspondence table between the voltage signal and the measured temperature can be established in advance.

During the calibration process of the thermistor 4, in order to avoid abnormal temperature measurement during the working process of the laser, the measurement temperature calibration range of the thermistor 4 must be greater than the storage temperature range of the semiconductor laser, and the thermistor 4 is connected to the semiconductor control system through a wire. Put the thermistor 4 into the constant temperature box, set the temperature as the lowest temperature for measurement, and measure the temperature after half an hour of constant temperature. At this time, the value displayed in the system is a certain value between 0 and 4096. Compare this value with Corresponds to the current measured temperature value. Increase the temperature of the incubator by 1°C and keep the temperature for half an hour, then repeat the measurement process, and record the corresponding relationship between the measured temperature and the measured voltage. Repeat the test in this way until the set temperature in the incubator is 10°C higher than the upper limit of the storage temperature of the semiconductor laser, and the calibration ends. The interval of measured temperature data in this data sheet is 1°C. When the measured data is smaller than the required interval, the measured temperature value is calculated by linear interpolation, and rounded to an accuracy of 0.01°C, and the sorted out voltage The correspondence table between the signal and the measured temperature is stored in the data storage module 7 for future use.

Example 4

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when performing the closed-loop temperature control function of the semiconductor cooling plate 5 .

The emission wavelength of the semiconductor laser is closely related to the temperature of the die, and the temperature rise will cause the wavelength to become longer. In order to ensure the accuracy and repeatability of the output wavelength of the semiconductor laser, to ensure the long-term stable operation of the semiconductor laser, the semiconductor laser die and thermistor 4 , semiconductor refrigeration sheet 5 are packaged together. The temperature sampling feedback module 2 collects the die temperature of the semiconductor laser through the thermistor 4, and feeds back the measured temperature value to the microprocessor control module 1, and the microprocessor control module 1 performs PID calculation through an algorithm according to the sampling temperature. The seven DAC converter modules control the voltage variable current source module to supply power to the H-bridge driving circuit, and the H-bridge driving circuit is connected to the semiconductor cooling chip 5 . By changing the power supply current of the H-bridge drive circuit to control the cooling efficiency of the semiconductor cooling chip 5, the semiconductor cooling chip 5 is kept at a constant temperature.

When the system is just powered on, due to the system reset, the thermistor 4 is delayed in collecting stable signals, etc., resulting in a delay of several milliseconds to several seconds in the stable collection of data, in order to ensure the stability of the system, avoid the current oscillation or excessive When the system is just powered on or restarted, the output current of the variable current source of the semiconductor cooling chip 5 is controlled to be 0 until the system works normally. After the temperature collection data of the thermistor 4 is stable, the semiconductor cooling chip 5 starts to work normally. If the thermal protection function is enabled, the microprocessor control module 1 immediately controls the first DAC conversion module 211 to the sixth DAC conversion module 26 when the temperature collected by the temperature acquisition feedback module is abnormal for 5 consecutive times or exceeds the allowable temperature range of the laser. Output 0 voltage, stop the external output of the variable voltage source module and the variable current source module, and protect the semiconductor laser. It should be noted that the thermal protection function can be turned off during the test.

Example 5

The semiconductor laser control system provided in the embodiment of the present invention can perform the following operations when outputting a wide tuning wavelength.

After the semiconductor laser control system is started, the microprocessor control module 1 sends an instruction to retrieve each control area bias voltage or current stored in the data storage module 7 and the wavelength and power correspondence table of the semiconductor laser output light, and the correspondence table Stored in the RAM of the microprocessor control module 1 itself, and at the same time retrieve the temperature calibration table, the microprocessor control module 1 communicates with the host computer 9 through the communication module 3, and receives the control instructions sent by the host computer 9. The control instructions include four Parameters such as the starting wavelength, stepping wavelength, stepping time, and ending wavelength of the output light of the segment laser.

Microprocessor control module 1 writes two passive cavity areas, one phase adjustment area 13, Power amplifier 15, laser area 14, semiconductor optical amplifying unit 16 control the voltage or current control program of the six modules. After writing the control program, the control system starts to control the four-segment laser to emit light. The microprocessor control module 1 issues digital-to-analog conversion instructions for the first DAC module 1 to the sixth DAC module through SPI communication and GPIO pins.

The first DAC conversion module 21 is connected to the semiconductor optical amplification unit 16 through the first voltage-controlled current source module 41, and the first analog voltage signal output by the first DAC conversion module 21 controls the first voltage The control current source module 41 outputs the first tuning current signal to tune the semiconductor optical amplifying unit 16, the second DAC conversion module 22 is connected to the power amplifier 15 through the second voltage control current source module 42, and the first The second analog voltage signal output by the second DAC conversion module 22 controls the second voltage-controlled current source module 42 to output a second tuning current signal to tune the power amplifier 15, and the third DAC conversion module 23 passes the first voltage The controlled voltage source module 31 is connected to the first passive cavity area 11, and the third analog voltage signal output by the third DAC conversion module 23 controls the first voltage controlled voltage source module 31 to output the first tuning voltage signal Tuning the first passive cavity region 11, the fourth DAC conversion module 24 is connected to the laser region 14 through the third voltage-controlled current source module 43, and the fourth analog output of the fourth DAC conversion module 24 The voltage signal controls the third voltage-controlled current source module 43 to output a third tuning current signal to tune the laser zone 14, and the fifth DAC conversion module 25 adjusts the phase with the second voltage-controlled voltage source module 32 zone 13, the fifth analog voltage signal output by the fifth DAC conversion module 25 controls the second voltage-controlled voltage source module 32 to output a second tuning voltage signal to tune the phase adjustment zone 13, and the sixth DAC conversion The module 26 is connected to the second passive cavity area 12 through the third voltage-controlled voltage source module 33, and the sixth analog voltage signal output by the sixth DAC conversion module 26 controls the third voltage-controlled voltage source The module 33 outputs the third tuning current signal to tune the second passive cavity region 12 .

The conversion rates of the first DAC conversion module 211 to the sixth DAC conversion module 26 are ≥600 MHz, supplemented by a specially designed integration circuit. The step signal output by the microprocessor control module 1 can be converted into an analog voltage signal with high linearity, and the analog voltage signal drives the voltage-controlled current source module and the voltage-controlled current source module composed of high-speed precision operational amplifiers, and can output continuous Controllable and precise voltage or current. The microprocessor control module 1 selects two passive cavity areas and one phase adjustment area corresponding to the wavelength and power according to the external setting requirements for the output wavelength of the laser and according to the current and voltage combination and the output wavelength and power correspondence table 13. Power amplifier 15, laser area 14, and semiconductor optical amplifying unit 16 inject current or voltage values to realize fast wavelength tuning.

In this embodiment, the semiconductor laser is a four-segment wide-tuning fast frequency-sweeping semiconductor laser. It should be noted that the semiconductor laser control system in the embodiment of the present invention can also provide downward compatibility to drive other types of lasers, such as a one-segment semiconductor laser, two-segment type semiconductor laser, three-segment type semiconductor laser. It is only necessary that the number of voltage sources and current sources output by the semiconductor laser control system, as well as the output voltage and current range meet the output requirements of other lasers. Connect the pins of the thermistor 4 and the pins of the semiconductor cooling plate 5 with the semiconductor laser control system according to the requirements of the laser, connect the other current tuning signals with the voltage-controlled current source module, connect the voltage signal with the voltage-controlled voltage source module, and connect Pay attention to determine the power range. The semiconductor laser control system can be controlled to drive the corresponding laser to emit light through the software communication of the upper computer 9 . If precise control of the wavelength and temperature is required, the wavelength, power and temperature of the laser can be calibrated with reference to Embodiment 1 and Embodiment 2.

The semiconductor laser control system provided in the embodiment of the present invention can provide 3-way voltage-controlled voltage source module output and 4-way voltage-controlled current source module output. There are various voltage and current output combinations, and different types of lasers can be driven through the control of the host computer 9. Laser, the voltage-controlled voltage source and voltage-controlled current source in the design are relatively independent, which can realize the independent control of the magnitude and frequency of each voltage and current, and realize the continuous output of voltage and current with good output synchronization through specific processing circuits and other characteristics, the microprocessor control module with high-performance DSP computing processor as the core, after table look-up calculation, implements the control of the current value of each voltage-controlled current source and the voltage value of the voltage-controlled voltage source, and can control the semiconductor laser to realize nanometer Fast wavelength tuning in seconds.

It should be understood that steps may be reordered, added or deleted using the various forms of flow shown above. For example, the steps described in the present disclosure may be performed in parallel, sequentially, or in a different order, as long as the desired result of the technical solution disclosed in the present invention can be achieved, no limitation is imposed herein.

The above specific implementation methods do not constitute a limitation to the protection scope of the present invention. It should be apparent to those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made depending on design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. A semiconductor laser control system is characterized by comprising a microprocessor control module, a plurality of paths of mutually independent DAC conversion modules, a plurality of paths of mutually independent voltage-controlled voltage source modules, a plurality of paths of mutually independent voltage-controlled current source modules, a plurality of paths of mutually independent ADC conversion modules, a plurality of paths of mutually independent voltage acquisition modules, a plurality of paths of mutually independent current acquisition modules, a temperature sampling feedback module and a communication module;

the microprocessor control module is communicated with an upper computer through the communication module 3, receives a control instruction of the upper computer to control the semiconductor laser to work and transmits back working data information of the semiconductor laser to the upper computer, wherein the semiconductor laser comprises a first passive cavity area, a second passive cavity area, a phase adjusting area, a laser area, a power amplifier and a semiconductor light amplifying unit;

the DAC conversion module is used for dividing voltage into a target number of analog voltages according to a control instruction of the microprocessor control module, and the analog voltages are used for controlling a voltage-controlled voltage source module or a voltage-controlled current source module of the semiconductor laser;

the voltage-controlled voltage source module is used for changing output voltage according to different input voltage signals and controlling a passive cavity area and a phase adjusting area of the semiconductor laser by using the output voltage;

the voltage-controlled current source module is used for changing output current according to different input voltage signals, and the output current is used for controlling a power amplifier, a laser area and a semiconductor optical amplification unit of the semiconductor laser;

the ADC conversion module is used for converting the voltage signals and the current signals acquired by the voltage acquisition module and the current acquisition module into digital signals with target quantity and sending the digital signals to the microprocessor control module;

the current acquisition module is used for acquiring a current signal of the circuit, converting the current signal into a voltage signal and transmitting the voltage signal to the ADC conversion module;

the voltage acquisition module is used for acquiring voltage signals of the circuit and transmitting the voltage signals to the ADC module;

the temperature sampling feedback module is electrically connected with the microprocessor control module and is used for actually monitoring the temperature of the semiconductor laser;

the communication module is used for communicating the microprocessor control module with the upper computer.

2. The semiconductor laser control system of claim 1, wherein the plurality of mutually independent DAC conversion modules comprises 7 mutually independent DAC conversion modules, namely a first DAC conversion module, a second DAC conversion module, a third DAC conversion module, a fourth DAC conversion module, a fifth DAC conversion module, a sixth DAC conversion module and a seventh DAC conversion module;

the multiple independent voltage-controlled voltage source modules comprise 3 independent voltage-controlled voltage source modules which are respectively a first voltage-controlled voltage source module, a second voltage-controlled voltage source module and a third voltage-controlled voltage source module;

the multiple independent voltage-controlled current source modules are 3 independent voltage-controlled current source modules which are respectively a first voltage-controlled current source module, a second voltage-controlled current source module and a third voltage-controlled current source module;

the multiple independent ADC conversion modules comprise 7 independent ADC conversion modules which are respectively a first ADC conversion module, a second ADC conversion module, a third ADC conversion module, a fourth ADC conversion module, a fifth ADC conversion module, a sixth ADC conversion module and a seventh ADC conversion module;

the multiple independent voltage acquisition modules are 3 independent voltage acquisition modules which are respectively a first voltage acquisition module, a second voltage acquisition module and a third voltage acquisition module;

the current acquisition modules which are mutually independent in multiple paths are 4 independent current acquisition modules which are respectively a first current acquisition module, a second current acquisition module, a third current acquisition module and a fourth current acquisition module.

3. The semiconductor laser control system of claim 2, wherein the first DAC conversion module is connected to the semiconductor optical amplification unit via the first voltage-controlled current source module, and a first analog voltage signal output by the first DAC conversion module controls the first voltage-controlled current source module to output a first tuning current signal to tune the semiconductor optical amplification unit;

the second DAC conversion module is connected with the power amplifier through the second voltage-controlled current source module, and a second analog voltage signal output by the second DAC conversion module controls the second voltage-controlled current source module to output a second tuning current signal to tune the power amplifier;

the third DAC conversion module is connected with the first passive cavity area through the first voltage-controlled voltage source module, and a third analog voltage signal output by the third DAC conversion module controls the first voltage-controlled voltage source module to output a first tuning voltage signal to tune the first passive cavity area;

the fourth DAC conversion module is connected with the laser area through the third voltage-controlled current source module, and a fourth analog voltage signal output by the fourth DAC conversion module controls the third voltage-controlled current source module to output a third tuning current signal to tune the laser area;

the fifth DAC conversion module is connected with the phase adjustment area through the second voltage-controlled voltage source module, and a fifth analog voltage signal output by the fifth DAC conversion module controls the second voltage-controlled voltage source module to output a second tuning voltage signal to tune the phase adjustment area;

the sixth DAC conversion module is connected to the second passive cavity through the third voltage-controlled voltage source module, and a sixth analog voltage signal output by the sixth DAC conversion module controls the third voltage-controlled voltage source module to output a third tuning voltage signal to tune the second passive cavity.

4. The semiconductor laser control system according to claim 2, wherein the microprocessor control module controls the first voltage-controlled current source to output a first current through the first DAC conversion module, the first current collection module collects the first current output by the first voltage-controlled current source and transmits a collected first current signal to the first ADC conversion module, and the first current collection module and the first ADC conversion module convert the first current signal into a first digital signal and transmit the first digital signal to the microprocessor control module;

the microprocessor control module controls the second voltage-controlled current source to output a second current through the second DAC conversion module, the second current acquisition module acquires the second current output by the second voltage-controlled current source and transmits an acquired second current signal to the second ADC conversion module, and the second current acquisition module and the second ADC conversion module convert the second current signal into a second digital signal and transmit the second digital signal to the microprocessor control module;

the microprocessor control module controls the first voltage-controlled voltage source to output a first voltage through the third DAC conversion module, the first voltage acquisition module acquires the first voltage output by the first voltage-controlled voltage source and transmits an acquired first voltage signal to the third ADC conversion module, and the first voltage acquisition module and the third ADC conversion module convert the first voltage signal into a third digital signal and transmit the third digital signal to the microprocessor control module;

the microprocessor control module controls the third voltage-controlled current source to output a third current through the fourth DAC conversion module, the third current collection module collects the third current output by the third voltage-controlled current source and transmits a collected third current signal to the fourth ADC conversion module, and the third current collection module and the fourth ADC conversion module convert the third current signal into a fourth digital signal and transmit the fourth digital signal to the microprocessor control module;

the microprocessor control module controls the second voltage-controlled voltage source to output a second voltage through the fifth DAC conversion module, the second voltage acquisition module acquires the second voltage output by the second voltage-controlled voltage source and transmits an acquired second voltage signal to the fifth ADC conversion module, and the second voltage acquisition module and the fifth ADC conversion module convert the second voltage signal into a fifth digital signal and transmit the fifth digital signal to the microprocessor control module;

the microprocessor control module controls the third voltage-controlled voltage source to output a third voltage through the sixth DAC conversion module, the third voltage acquisition module acquires the third voltage output by the third voltage-controlled voltage source and transmits an acquired third voltage signal to the sixth ADC conversion module, and the third voltage acquisition module and the sixth ADC conversion module convert the third voltage signal into a sixth digital signal and transmit the sixth digital signal to the microprocessor control module.

5. The semiconductor laser control system according to claim 2, further comprising a thermistor for collecting a temperature of the semiconductor laser, a semiconductor chilling plate for adjusting the temperature of the semiconductor laser, and a semiconductor chilling control module for controlling operation of the semiconductor chilling plate, wherein the seventh DAC conversion module controls the semiconductor chilling control module 6 to be electrically connected to the semiconductor chilling plate, the fourth current collection module is electrically connected to the semiconductor chilling plate, the seventh ADC conversion module collects a chilling control current of the semiconductor chilling plate through the fourth current collection module, the thermistor is packaged with the semiconductor laser and the semiconductor chilling plate into a whole, the microprocessor control module obtains a temperature of the thermistor through the temperature sampling feedback module, the temperature sampling feedback module collects a die temperature of the semiconductor laser through the thermistor and feeds a measured temperature value back to the microprocessor control module, and the microprocessor control module controls the voltage-controlled current source module to adjust the chilling control current of the semiconductor chilling plate according to the measured temperature value to adjust the chilling efficiency.

6. The semiconductor laser control system according to claim 1 or 5, further comprising a data storage module for storing control data of the control system and a heat dissipation module for dissipating heat of the control system and maintaining the control system in a constant temperature working environment, wherein the data storage module and the heat dissipation module are electrically connected to the microprocessor control module respectively.

7. The semiconductor laser control system of claim 1, wherein the semiconductor refrigeration control module comprises an H-bridge driving circuit, the H-bridge driving circuit is electrically connected to the semiconductor refrigeration chip, and the seventh DAC conversion module controls a supply current of the H-bridge driving circuit to control the refrigeration efficiency of the semiconductor refrigeration chip.

8. The semiconductor laser control system of claim 6, wherein the heat dissipation module is an air-cooled heat sink comprising a fan, a heat sink, and a heat pipe.

9. A semiconductor laser control system as claimed in claim 1 wherein the microprocessor control module comprises a PGA programmable logic controller or an ARM processor.

10. The semiconductor laser control system of claim 2 wherein the semiconductor laser is a four-segment wide-tuning fast swept semiconductor laser.

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