CN115966491B - Wafer cutting plane detection device and method, wafer cutting device and method - Google Patents
Wafer cutting plane detection device and method, wafer cutting device and method Download PDFInfo
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Abstract
The invention provides a wafer cutting plane detection device and method, a wafer cutting device and method, wherein gas is respectively conveyed to the surface of a reference plate and the surface of a laser protection layer on a wafer through a first pipeline and a second pipeline, the average pressure difference between the gas in the first pipeline and the gas in the second pipeline caused by the difference between the vertical distance from the reference surface to the first pipeline and the vertical distance from the surface of the laser protection layer to the second pipeline is measured, the average height difference between the reference surface of the reference plate and the surface of the laser protection layer is obtained through calculation according to the average pressure difference, and the average height difference and the average thickness of the laser protection layer are subtracted by adopting the height of the reference surface so as to obtain the cutting plane of the wafer, so that the detected cutting plane is more accurate, the defocusing phenomenon during laser cutting is avoided, and the poor cutting is avoided.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and in particular, to a wafer dicing plane detecting apparatus and method, and a wafer dicing apparatus and method.
Background
In the 3D IC process, in order to achieve bonding between the chip and the wafer, the complete wafer needs to be cut into chips, and then the chips with different functions are connected with the wafer through a bonding technology, so that the area of the chip is reduced, and the integration level is improved. At present, the mainstream cutting method comprises mechanical cutting, laser cutting and plasma etching, wherein the plasma etching has the advantages of high processing speed, good stress healing effect after etching, high etching depth-to-width ratio (the thickness of a wafer is smaller than 100 μm) and the like, and becomes the mainstream wafer cutting method, but a plurality of layers of materials in a wafer cannot be processed by adopting the plasma etching, such as a metal layer on a cutting channel, a material with a low dielectric constant, oxide and the like, but can be more easily ablated by laser. Therefore, when the wafer is cut by adopting a method combining plasma etching and laser cutting, a laser protection layer needs to be coated on the surface of the wafer, a dielectric layer on a substrate and a metal layer positioned in the dielectric layer are cut by adopting laser, and the substrate is etched by adopting plasma.
When laser cutting is adopted, if the focusing plane of the laser is not coincident with the expected cutting plane, defocusing phenomenon can be caused, defocusing can cause insufficient laser energy for cutting on the laser protection layer, and then the laser protection layer is remained on the cutting surface, so that a cutting surface 'long grass' phenomenon can be generated after subsequent etching.
In order to prevent the defocusing phenomenon, a desired cutting plane is detected and obtained before laser cutting is adopted, an optical detection device is adopted to detect and obtain the cutting plane at present, but as the laser protection layer and the dielectric layer are made of transparent materials, light emitted by the optical detection device can penetrate through the laser protection layer and the dielectric layer, so that the actually detected and obtained cutting plane is different from the desired cutting plane, and even a large difference exists between the cutting planes of different areas on the detected and obtained wafer. As shown in fig. 1, an insulating dielectric layer 11 and a laser protection layer 12 are formed on a substrate (not shown) in a wafer, and the surface of the insulating dielectric layer 11 is rugged, resulting in the surface of the laser protection layer 12 also being rugged, and a cutting plane obtained by detection with an optical detection device may be located in the insulating dielectric layer 11 or in the laser protection layer 12, for example, may be located at H1, H2 or H3, resulting in an inability to determine an accurate cutting plane.
Therefore, how to make the plane of laser focusing coincide with the desired cutting plane to avoid causing poor cutting is a problem that needs to be solved currently.
Disclosure of Invention
The invention aims to provide a wafer cutting plane detection device and method, and a wafer cutting device and method, so that a detected cutting plane is more accurate, the defocusing phenomenon during laser cutting is avoided, and the poor cutting is further avoided.
In order to achieve the above object, the present invention provides a wafer dicing plane detecting apparatus for detecting a dicing plane of a wafer covered with a laser protection layer, the wafer having an uneven surface such that the laser protection layer has an uneven surface, the wafer dicing plane detecting apparatus comprising:
The surface of the reference plate is a horizontal reference surface;
The first pipeline and the second pipeline are respectively arranged above the reference plate and the wafer and are used for respectively conveying gas to the surface of the reference plate and the surface of the laser protection layer so that part of the gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively;
The pressure sensor is used for measuring the average pressure difference between the gas in the first pipeline and the gas in the second pipeline, which is caused by the difference between the vertical distance from the reference surface to the first pipeline and the vertical distance from the surface of the laser protection layer to the second pipeline;
And the data analysis unit is used for calculating and obtaining an average height difference between the reference surface of the reference plate and the surface of the laser protection layer according to the average pressure difference, and subtracting the average height difference and the average thickness of the laser protection layer from the height of the reference surface to obtain the cutting plane of the wafer.
Optionally, the wafer dicing plane detecting device further includes:
A compression pump for providing compressed gas;
A flow meter for detecting a total flow of the compressed gas;
and the diverter is used for conveying the compressed gas to the first pipeline and the second pipeline respectively according to the initial flow of the set proportion.
Optionally, the heights of the outlet ends of the first pipeline and the second pipeline are the same, a third pipeline and a fourth pipeline are respectively communicated with the same heights of the first pipeline and the second pipeline, the pressure sensor is respectively communicated with the third pipeline and the fourth pipeline so as to measure the average pressure difference between the third pipeline and the fourth pipeline, and then the average pressure difference between the first pipeline and the gas in the second pipeline caused by the difference between the vertical distance between the reference surface and the first pipeline and the vertical distance between the surface of the laser protection layer and the second pipeline is obtained by converting the average pressure difference between the third pipeline and the fourth pipeline according to the set proportion of the initial flow in the first pipeline and the second pipeline.
Optionally, the vertical distance between the reference surface and the outlet end of the first pipeline and the vertical distance between the surface of the laser protection layer and the outlet end of the second pipeline are both 50-200 μm.
The invention also provides a wafer cutting device, which is used for cutting a wafer, wherein the wafer is covered with a laser protection layer, the wafer is provided with an uneven surface, and the laser protection layer is provided with the uneven surface, and the wafer cutting device comprises:
The wafer cutting plane detection device is used for detecting and obtaining the cutting plane of the wafer;
And the laser is used for emitting laser to the cutting channel of the wafer, and the laser is focused at the cutting plane so as to cut the laser protection layer and the cutting channel on the cutting channel.
Optionally, the wafer includes a substrate and an insulating dielectric layer and a metal layer formed on the substrate, and the cutting plane is located in the insulating dielectric layer and the metal layer, so that the laser protection layer on the dicing street and the insulating dielectric layer and the metal layer on the dicing street are cut.
Optionally, the wafer dicing apparatus further includes:
And the focusing unit is arranged between the wafer and the laser and is used for focusing the laser at the cutting plane.
Optionally, the wafer dicing apparatus further includes:
The wafer is fixed on the bearing table, and the laser is focused on the cutting plane by moving the bearing table.
Optionally, the focal depth of the laser ranges from 8 μm to 10 μm.
The invention also provides a wafer cutting plane detection method, which comprises the following steps:
Providing a wafer and a reference plate, wherein the wafer is covered with a laser protection layer, the wafer is provided with an uneven surface, the laser protection layer is provided with an uneven surface, and the surface of the reference plate is a horizontal reference surface;
Delivering gas to the surface of the underlying reference plate and the surface of the laser protection layer through a first pipeline and a second pipeline, respectively, so that part of the gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline, respectively;
Measuring the average pressure difference between the gases in the first pipeline and the second pipeline caused by the difference between the vertical distance from the reference surface to the first pipeline and the vertical distance from the surface of the laser protection layer to the second pipeline;
calculating and obtaining an average height difference between a reference surface of the reference plate and the surface of the laser protection layer according to the average pressure difference;
and subtracting the average height difference and the average thickness of the laser protection layer from the height of the reference surface to obtain a cutting plane of the wafer.
Optionally, before the gas is respectively delivered to the surface of the underlying reference plate and the surface of the laser protection layer through the first pipeline and the second pipeline, the wafer cutting plane detection method further includes:
Providing a compressed gas;
detecting the total flow of the compressed gas;
And conveying the compressed gas to the first pipeline and the second pipeline respectively according to the initial flow of the set proportion.
Optionally, the heights of the outlet ends of the first pipeline and the second pipeline are the same, and the step of measuring the average pressure difference between the gases in the first pipeline and the second pipeline caused by the difference between the height of the rugged surface of the laser protection layer and the reference surface includes:
measuring an average pressure difference between gases at the same height in the first and second lines;
and according to the set proportion of the initial flow in the first pipeline and the second pipeline, converting the average pressure difference between the gases at the same height in the first pipeline and the second pipeline to obtain the average pressure difference between the gases in the first pipeline and the second pipeline, which is caused by the difference between the vertical distance from the reference surface to the first pipeline and the vertical distance from the surface of the laser protection layer to the second pipeline.
The invention also provides a wafer cutting method, which comprises the following steps:
providing a wafer, wherein the wafer is covered with a laser protection layer, and the wafer is provided with an uneven surface, so that the laser protection layer is provided with the uneven surface;
detecting and obtaining a cutting plane of the wafer by adopting the wafer cutting plane detection method;
and emitting laser to a cutting channel of the wafer, wherein the laser is focused at the cutting plane so as to cut the laser protection layer and the cutting channel on the cutting channel.
Optionally, the wafer includes a substrate, and an insulating dielectric layer and a metal layer formed on the substrate, and the cutting plane is located in the insulating dielectric layer and the metal layer, and cuts the laser protection layer on the dicing street and the insulating dielectric layer and the metal layer on the dicing street.
Optionally, the wafer dicing method further includes:
and cutting the substrate on the cutting path by adopting an etching process.
Optionally, the wafer is fixed on a carrier, and the carrier is moved so that the laser is focused at the cutting plane.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. The wafer cutting plane detection device comprises a reference plate, a first pipeline and a second pipeline, wherein the surface of the reference plate is a horizontal reference plane, the first pipeline and the second pipeline are respectively arranged above the reference plate and the wafer, the first pipeline and the second pipeline are used for respectively conveying gas to the surface of the reference plate and the surface of the laser protection layer, so that part of gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively, a pressure sensor is used for measuring the average pressure difference between the first pipeline and the gas in the second pipeline caused by the difference between the vertical distance between the reference plane and the first pipeline and the vertical distance between the surface of the laser protection layer and the second pipeline, and a data analysis unit is used for calculating and obtaining the average height difference between the reference plane of the reference plate and the surface of the laser protection layer according to the average pressure difference, and subtracting the average height difference and the thickness of the reference plane so as to obtain the average laser cutting plane, and further avoid the phenomenon that the laser cutting plane is bad.
2. The wafer cutting device comprises the wafer cutting plane detection device and a laser, wherein the wafer cutting plane detection device is used for detecting and obtaining a cutting plane of a wafer, and the laser is used for emitting laser to a cutting path of the wafer, and the laser is focused at the cutting plane so as to cut the laser protection layer and the cutting path on the cutting path, so that the obtained cutting plane is more accurate, and further, the phenomenon of defocusing is avoided, and poor cutting is avoided.
3. The wafer cutting plane detection method comprises the steps of providing a wafer and a reference plate, covering the wafer with a laser protection layer, enabling the wafer to have an uneven surface, enabling the laser protection layer to have the uneven surface, enabling the surface of the reference plate to be a horizontal reference plane, respectively conveying gas to the surface of the reference plate below and the surface of the laser protection layer through a first pipeline and a second pipeline, enabling part of gas to be blocked by the reference plate and the laser protection layer and returned to the first pipeline and the second pipeline respectively, measuring average pressure difference between the first pipeline and the gas in the second pipeline due to the difference of the vertical distance between the reference plane and the first pipeline and the vertical distance between the surface of the laser protection layer and the second pipeline, calculating and obtaining average height difference between the reference plane of the reference plate and the surface of the laser protection layer according to the average pressure difference, subtracting the average height difference of the reference plane and the average height difference of the laser protection layer from the average height difference of the reference plane and the average height difference of the laser protection layer, and obtaining the average height difference of the laser protection layer, and further avoiding bad cutting plane caused by laser cutting.
4. According to the wafer cutting method, the wafer cutting plane detection method is adopted to detect and obtain the cutting plane of the wafer, so that the obtained cutting plane is more accurate, and laser is emitted to the cutting path of the wafer, and is focused on the cutting plane, so that the phenomenon of defocusing is avoided when the laser protection layer on the cutting path and the cutting path are cut, and poor cutting is avoided.
Drawings
FIG. 1 is a schematic illustration of a rugged surface of a wafer;
FIG. 2 is a schematic diagram of a wafer dicing plane detecting apparatus according to an embodiment of the invention;
FIG. 3 is a flow chart of a wafer dicing plane detecting method according to an embodiment of the invention;
FIG. 4 is a schematic view of a wafer dicing apparatus according to an embodiment of the invention;
Fig. 5 is a flowchart of a wafer dicing method according to an embodiment of the invention.
The reference numerals of fig. 1 to 5 are as follows:
11-insulating medium layer, 12-laser protection layer, 20-wafer cutting plane detection device, 21-wafer, 211-laser protection layer, 212-bearing table, 22-reference plate, 231-first pipeline, 2311-first outlet end, 232-second pipeline, 2321-second outlet end, 233-third pipeline, 234-fourth pipeline, 24-pressure sensor, 25-diverter, 26-flowmeter, 27-compression pump, 31-laser, 32-focusing unit and 33-supporting platform.
Detailed Description
In order to make the objects, advantages and features of the present invention more apparent, the wafer dicing plane detecting apparatus and method, and the wafer dicing apparatus and method according to the present invention will be described in further detail with reference to the accompanying drawings. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
An embodiment of the invention provides a wafer cutting plane detection device, which is used for detecting a cutting plane of a wafer, wherein the wafer is covered with a laser protection layer, the wafer is provided with an uneven surface, the laser protection layer is provided with an uneven surface, the wafer cutting plane detection device comprises a reference plate, a first pipeline and a second pipeline, the first pipeline and the second pipeline are respectively arranged above the reference plate and the wafer, the first pipeline and the second pipeline are used for respectively conveying gas to the surface of the reference plate and the surface of the laser protection layer, so that part of gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively, a pressure sensor is used for measuring an average pressure difference between the first pipeline and the second pipeline caused by a difference between the vertical distance between the reference plate and the vertical distance between the surface of the laser protection layer and the second pipeline, a data analysis unit is used for calculating the average pressure difference between the reference plate and the average height of the wafer, and the average height difference between the laser protection layer is obtained according to the average height difference between the reference plate and the average height of the laser protection layer.
The wafer dicing plane detecting apparatus according to the present embodiment will be described in detail with reference to fig. 1 and 2, and the arrow direction in fig. 2 is the gas flow direction.
The wafer 21 is covered with a laser protection layer 211, the wafer 21 has an uneven surface, so that the laser protection layer 211 has an uneven surface, and the surface of the reference plate 22 is a horizontal reference plane.
The wafer 21 includes a plurality of chip regions and dicing streets connecting adjacent chip regions, and the chips are obtained after dicing the streets.
The wafer 21 includes a substrate and an insulating dielectric layer formed on the substrate, and various devices, metal layers and other structures are formed in the insulating dielectric layer, so that the surface of the insulating dielectric layer is rugged.
The material of the reference plate 22 may be glass, ceramic, or the like.
The reference plate 22 does not have a rugged surface, but rather has a flat surface so that the surface of the reference plate 22 can serve as a reference surface for subsequent measurements.
The material of the laser protection layer 211 may be a water-soluble resin with high viscosity, and the laser protection layer 211 is coated on the wafer 21 by spin coating. Since the laser protection layer 211 has a high viscosity, resulting in poor fluidity, when the laser protection layer 211 is coated on the wafer 21, the thickness of the laser protection layer 211 at each position of the wafer 21 can be substantially the same only by the centrifugal force of rotation, and the entire surface of the laser protection layer 211 cannot be flattened by the fluidity of the laser protection layer 211 itself. Therefore, the surface topography of the wafer 21 is transferred to the surface of the laser protection layer 211, so that the surface topography of the laser protection layer 211 is the same as the surface topography of the wafer 21.
The laser protection layer 211 is used for protecting the region (including the chip region) outside the dicing street from being etched when the substrate on the dicing street is subsequently diced by adopting an etching process, and the laser protection layer 211 is also used for protecting the region outside the dicing street during laser dicing, so that slag generated by laser dicing is prevented from adhering to the region outside the dicing street.
The reference plate 22 and the wafer 21 are spaced apart in the horizontal direction, and the entire surface of the laser protection layer 211 may be lower or higher than the surface of the reference plate 22, or a part of the surface of the laser protection layer 211 may be flush with the surface of the reference plate 22, in which case, due to the surface roughness of the laser protection layer 211, a part of the surface of the laser protection layer 211 is lower than and a part of the surface is higher than the surface of the reference plate 22.
The first pipe 231 and the second pipe 232 are respectively disposed above the reference plate 22 and the wafer 21, and the first pipe 231 and the second pipe 232 are used for respectively delivering gas to the surface of the reference plate 22 and the surface of the laser protection layer 211, so that part of the gas is blocked by the reference plate 22 and the laser protection layer 211 and returns to the first pipe 231 and the second pipe 232, respectively.
The wafer cutting plane detection device further comprises:
A compression pump 27 for providing compressed gas to provide a flow force to the gas in the inlet line;
a flow meter 26 for detecting a total flow of the compressed gas;
the diverter 25 is configured to deliver the total flow of the compressed gas to the first pipeline 231 and the second pipeline 232 according to an initial flow of a set ratio, where the set ratio is preferably 1:1.
Preferably, the compressed gas is a single type of gas, so that the compressed gas can be completely split into the first pipeline 231 and the second pipeline 232 according to the set proportion, otherwise, if the compressed gas contains at least two types of gases, the splitter 25 cannot completely split each type of gas into the first pipeline 231 and the second pipeline 232 according to the set proportion, and thus the difference of the pressure is caused by the difference of the types of the gases in the first pipeline 231 and the second pipeline 232, and the result of the pressure difference measured later is inaccurate.
The compressed gas is preferably a gas that does not react with the laser protection layer 211, such as nitrogen or argon.
The total flow of the compressed gas detected by the flow meter 26 may be 5mL/min to 10mL/min.
The first outlet end 2311 of the first pipe 231 is aligned with the reference surface of the reference plate 22, the second outlet end 2321 of the second pipe 232 is aligned with the surface of the laser protection layer 211, and when the delivered gas reaches the surface of the reference plate 22 and the surface of the laser protection layer 211 respectively, part of the gas is blocked by the reference plate 22 and the laser protection layer 211 and returns to the first pipe 231 and the second pipe 232 respectively, so that the flow rates in the first pipe 231 and the second pipe 232 are changed compared with the initial flow rate, and the gas pressures in the first pipe 231 and the second pipe 232 are changed compared with the initial state. The other portion of the gas flows through the gap between the first outlet end 2311 and the reference plate 22 and the gap between the second outlet end 2321 and the laser protection layer 211, respectively.
Preferably, the first outlet end 2311 is a first baffle disposed at an outlet of the first pipeline 231, the second outlet end 2321 is a second baffle disposed at an outlet of the second pipeline 232, a first through hole is disposed at a center of the first baffle, a second through hole is disposed at a center of the second baffle, the first through hole is communicated with the first pipeline 231, the second through hole is communicated with the second pipeline 232, the first through hole is aligned with a reference surface of the reference plate 22, the second through hole is aligned with a surface of the laser protection layer 211, a diameter of the first through hole is preferably smaller than an inner diameter of the first pipeline 231, a diameter of the second through hole is preferably smaller than an inner diameter of the second pipeline 232, an acting area of gas on the reference surface and a surface of the laser protection layer 211 is reduced, and a rugged change of the surface of the laser protection layer 211 can be more obviously represented by a change of gas pressure in the second pipeline 232, so that a subsequent pressure difference is more accurately measured.
Preferably, the heights of the first outlet end 2311 and the second outlet end 2321 are the same, that is, the bottom surfaces of the first outlet end 2311 and the second outlet end 2321 are located on the same horizontal plane, the vertical distance between the reference surface and the first outlet end 2311 of the first pipeline 231 and the vertical distance between the surface of the laser protection layer 211 and the second outlet end 2321 of the second pipeline 232 are all 50 μm to 200 μm, so as to avoid that the reference plate 22 and the wafer 21 collide with the first pipeline 231 and the second pipeline 232 respectively due to too small vertical distance, and avoid that the gas returned into the first pipeline 231 and the second pipeline 232 is too small due to too large vertical distance, and further avoid that the pressure difference between the gas in the first pipeline 231 and the gas in the second pipeline 232 obtained by subsequent measurement is inaccurate.
The pressure sensor 24 is configured to measure an average pressure difference between the gases in the first pipe 231 and the second pipe 232 caused by a difference between a vertical distance from the reference surface to the first pipe 231 and a vertical distance from a surface of the laser protection layer 211 to the second pipe 232.
The reasons for the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 include 1) that the set ratio of the total flow of the compressed gas split to the initial flow in the first pipe 231 and the second pipe 232 is not 1:1, the difference of the initial flow may cause the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232, and 2) that the surface of the laser protection layer 211 is rugged, resulting in that the vertical distance from the surface of the different positions of the laser protection layer 211 to the second outlet end 2321 of the second pipe 232 is different from the vertical distance from the reference surface of the reference plate 22 to the first outlet end 2311 of the first pipe 231, and further, the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 is caused.
The first outlet end 2311 of the first pipeline 231 and the second outlet end 2321 of the second pipeline 232 are the same in height, a third pipeline 233 and a fourth pipeline 234 are respectively communicated with the first pipeline 231 and the second pipeline 232 in the same height, the pressure sensor 24 is respectively communicated with the third pipeline 233 and the fourth pipeline 234, so as to measure the pressure difference between the third pipeline 233 and the fourth pipeline 234 as the pressure difference between the gases at the same height in the first pipeline 231 and the second pipeline 232, average the pressure differences corresponding to a plurality of positions on the surface of the wafer 21 to obtain the average pressure difference between the gases at the same height in the first pipeline 231 and the second pipeline 232, and further, according to the set proportion of the initial flow rates in the first pipeline 231 and the second pipeline 232, the average pressure difference between the gases at the same height in the first pipeline 231 and the second pipeline 232 is converted into the average pressure difference between the first pipeline 231 and the second pipeline 232 to obtain the average pressure difference between the reference pressure difference between the first pipeline 231 and the second pipeline 232, and the average pressure difference between the reference pressure difference between the first pipeline 231 and the second pipeline 232 is caused by removing the first laser light to the first laser light 1.
It should be noted that, when the set ratio of the initial flow rates in the first pipe 231 and the second pipe 232 is 1:1, the average pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 is the average pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 caused by the difference between the vertical distance from the reference surface of the reference plate 22 to the first pipe 231 and the vertical distance from the surface of the laser protection layer 211 to the second pipe 232.
The data analysis unit (not shown) is configured to calculate an average height difference between the reference surface of the reference plate 22 and the surface of the laser protection layer 211 according to an average pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 caused by a difference between the vertical distance of the reference surface of the reference plate 22 to the first pipe 231 and the vertical distance of the surface of the laser protection layer 211 to the second pipe 232, and to subtract the average height difference and the average thickness of the laser protection layer 211 from the height of the reference surface to obtain the cutting plane of the wafer 21.
Since the thicknesses of the laser protection layer 211 are substantially the same at each position of the wafer 21, the thicknesses of the laser protection layer 211 at a plurality of positions may be measured and averaged to obtain an average thickness of the laser protection layer 211.
The average height difference may be positive or negative, if the surface of the laser protection layer 211 at most positions is higher than the reference plane, the average height difference is negative, and if the surface of the laser protection layer 211 at most positions is lower than the reference plane, the average height difference is positive.
Since the height of the reference plane is known, by subtracting the average height difference from the height of the reference plane, the average height of the laser protection layer 211 can be obtained, and subtracting the average thickness of the laser protection layer 211, the average height of the surface of the wafer 21 can be obtained, that is, the accurate position of the plane on which most of the positions of the wafer 21 are located (i.e., the plane on which H2 in fig. 1 is located) can be obtained, and this plane is taken as the cutting plane when the wafer 21 is subsequently cut by laser, the laser is focused on this cutting plane, and the focal depth of the laser is used to cover the area above and below the cutting plane, so that the laser protection layer 211 above and below the cutting plane can be cut and removed, and the laser protection layer 211 is prevented from remaining on the cutting plane, thereby avoiding the cutting defects such as "grass growth" on the cutting plane.
From the above, the wafer dicing plane detection device comprises a reference plate, a first pipeline and a second pipeline, wherein the surface of the reference plate is a horizontal reference plane, the first pipeline and the second pipeline are respectively arranged above the reference plate and the wafer, the first pipeline and the second pipeline are used for respectively conveying gas to the surface of the reference plate and the surface of the laser protection layer, so that part of gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively, the pressure sensor is used for measuring the average pressure difference between the first pipeline and the gas in the second pipeline caused by the difference between the vertical distance between the reference plane and the first pipeline and the vertical distance between the surface of the laser protection layer and the second pipeline, and the data analysis unit is used for calculating and obtaining the average height difference between the reference plane of the reference plate and the surface of the laser protection layer according to the average pressure difference, and is used for subtracting the average height difference between the reference plane and the average height of the laser protection layer so as to avoid the phenomenon that the wafer is diced well, and the wafer dicing plane is further avoided from being cut well.
The embodiment of the invention provides a wafer cutting device which is used for cutting a wafer, wherein the wafer is covered with a laser protection layer, the wafer is provided with an uneven surface, the laser protection layer is provided with an uneven surface, the wafer cutting device comprises a wafer cutting plane detection device and a laser, the wafer cutting plane detection device is used for detecting and obtaining a cutting plane of the wafer, the laser is used for emitting laser to a cutting channel of the wafer, and the laser is focused at the cutting plane so as to cut the laser protection layer and the cutting channel on the cutting channel.
The wafer dicing apparatus according to the present embodiment will be described in detail with reference to fig. 1,2 and 4.
The wafer 21 is covered with a laser protection layer 211, and the wafer 21 has an uneven surface, so that the laser protection layer 211 has an uneven surface.
The wafer 21 includes a substrate and an insulating dielectric layer formed on the substrate, and various structures such as devices and metal layers are formed in the insulating dielectric layer, so that the surface of the insulating dielectric layer is rugged, and further, the surface of the laser protection layer 211 is rugged.
The wafer dicing plane detecting device 20 is configured to detect and obtain a dicing plane of the wafer 21.
The wafer dicing plane detecting apparatus 20 is referred to above and will not be described herein.
The cutting plane is located in the insulating dielectric layer and the metal layer (e.g., the plane in which H2 in fig. 1 is located), so that the laser protection layer 211 on the scribe line and the insulating dielectric layer and the metal layer on the scribe line are cut.
As shown in fig. 2 and 4, the wafer dicing plane detecting device 20 and the laser 31 are fixed on a supporting platform 33, the wafer 21 is fixed on a carrying table 212, the reference plate 22 is fixed on another carrying table (the reference plate 22 and the carrying table below it are not shown in fig. 4), and the wafer 21 is moved by moving the carrying table 212, so as to complete the detection of the dicing plane of the wafer 21 and the dicing of the wafer 21.
Wherein the laser light L1 may be focused at the cutting plane by moving the stage 212 horizontally and vertically.
The wafer dicing apparatus further includes a focusing unit 32 disposed between the wafer 21 and the laser 31, the focusing unit 32 being configured to focus the laser light L1 at the dicing plane.
The focusing unit 32 may include a lens and a member for fixing the lens.
When the laser L1 is focused on the cutting plane, the focal depth of the laser L1 can be used to cover the area above and below the cutting plane, so that the laser protection layers 211 above and below the cutting plane can be cut and removed by the laser L1, and the laser protection layers 211 are prevented from remaining on the cutting plane, thereby avoiding poor cutting such as long grass on the cutting plane.
Preferably, the focal depth of the laser L1 ranges from 8 μm to 10 μm.
From the above, the wafer cutting device of the invention comprises the wafer cutting plane detection device for detecting and obtaining the cutting plane of the wafer, and the laser for emitting laser to the cutting path of the wafer, wherein the laser is focused on the cutting plane to cut the laser protection layer on the cutting path and the cutting path, so that the obtained cutting plane is more accurate, and the defocusing phenomenon can be avoided, thereby avoiding the bad cutting.
An embodiment of the present invention provides a wafer dicing plane detecting method, referring to fig. 3, including:
Step S11, providing a wafer and a reference plate, wherein the wafer is covered with a laser protection layer, the wafer is provided with an uneven surface, the laser protection layer is provided with an uneven surface, and the surface of the reference plate is a horizontal reference surface;
step S12, conveying gas to the surface of the reference plate and the surface of the laser protection layer below through a first pipeline and a second pipeline respectively, so that part of the gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively;
step S13, measuring the average pressure difference between the gases in the first pipeline and the second pipeline caused by the difference between the vertical distance from the reference surface to the first pipeline and the vertical distance from the surface of the laser protection layer to the second pipeline;
Step S14, calculating and obtaining the average height difference between the reference surface of the reference plate and the surface of the laser protection layer according to the average pressure difference;
And S15, subtracting the average height difference and the average thickness of the laser protection layer from the height of the reference surface to obtain a cutting plane of the wafer.
The wafer dicing plane detecting method will be described in detail with reference to fig. 1 and 2, and the arrow direction in fig. 2 is the gas flow direction.
According to step S11, a wafer 21 and a reference plate 22 are provided, the wafer 21 is covered with a laser protection layer 211, the wafer 21 has a rugged surface, so that the laser protection layer 211 has a rugged surface, and the surface of the reference plate 22 is a horizontal reference plane.
The wafer 21 includes a plurality of chip regions and dicing streets connecting adjacent chip regions, and the chips are obtained after dicing the streets.
The wafer 21 includes a substrate and an insulating dielectric layer formed on the substrate, and various devices, metal layers and other structures are formed in the insulating dielectric layer, so that the surface of the insulating dielectric layer is rugged.
The material of the reference plate 22 may be glass, ceramic, or the like.
The reference plate 22 does not have a rugged surface, but rather has a flat surface so that the surface of the reference plate 22 can serve as a reference surface for subsequent measurements.
The material of the laser protection layer 211 may be a water-soluble resin with high viscosity, and the laser protection layer 211 is coated on the wafer 21 by spin coating. Since the laser protection layer 211 has a high viscosity, resulting in poor fluidity, when the laser protection layer 211 is coated on the wafer 21, the thickness of the laser protection layer 211 at each position of the wafer 21 can be substantially the same only by the centrifugal force of rotation, and the entire surface of the laser protection layer 211 cannot be flattened by the fluidity of the laser protection layer 211 itself. Therefore, the surface topography of the wafer 21 is transferred to the surface of the laser protection layer 211, so that the surface topography of the laser protection layer 211 is the same as the surface topography of the wafer 21.
The laser protection layer 211 is used for protecting the region (including the chip region) outside the dicing street from being etched when the substrate on the dicing street is subsequently diced by adopting an etching process, and the laser protection layer 211 is also used for protecting the region outside the dicing street during laser dicing, so that slag generated by laser dicing is prevented from adhering to the region outside the dicing street.
The reference plate 22 and the wafer 21 are spaced apart in the horizontal direction, and the entire surface of the laser protection layer 211 may be lower or higher than the surface of the reference plate 22, or a part of the surface of the laser protection layer 211 may be flush with the surface of the reference plate 22, in which case, due to the surface roughness of the laser protection layer 211, a part of the surface of the laser protection layer 211 is lower than and a part of the surface is higher than the surface of the reference plate 22.
Step S12, delivering gas to the surface of the reference plate 22 and the surface of the laser protection layer 211 below through the first pipe 231 and the second pipe 232, respectively, so that part of the gas is blocked by the reference plate 22 and the laser protection layer 211 and returns to the first pipe 231 and the second pipe 232, respectively.
The wafer cut plane detection method further includes, before delivering gas to the surface of the underlying reference plate 22 and the surface of the laser protection layer 211 through the first pipe 231 and the second pipe 232, respectively:
Providing compressed gas with a compression pump 27 to provide a flow force to the gas in the inlet line;
Detecting the total flow of the compressed gas using a flow meter 26;
the compressed gas with the total flow is delivered to the first pipeline 231 and the second pipeline 232 by adopting a flow divider 25 according to the initial flow of the set proportion, wherein the set proportion is preferably 1:1.
Preferably, the compressed gas is provided as a single type of gas, so that the compressed gas can be completely split into the first pipeline 231 and the second pipeline 232 according to the set proportion, otherwise, if the compressed gas contains at least two types of gases, the splitter 25 cannot completely split each type of gas into the first pipeline 231 and the second pipeline 232 according to the set proportion, and thus the difference of the pressure is caused by the difference of the types of gases in the first pipeline 231 and the second pipeline 232, so that the result of the pressure difference measured later is inaccurate.
The compressed gas is preferably a gas that does not react with the laser protection layer 211, such as nitrogen or argon.
The total flow of the compressed gas detected by the flow meter 26 may be 5mL/min to 10mL/min.
The first outlet end 2311 of the first pipe 231 is aligned with the reference surface of the reference plate 22, the second outlet end 2321 of the second pipe 232 is aligned with the surface of the laser protection layer 211, and when the delivered gas reaches the surface of the reference plate 22 and the surface of the laser protection layer 211 respectively, part of the gas is blocked by the reference plate 22 and the laser protection layer 211 and returns to the first pipe 231 and the second pipe 232 respectively, so that the flow rates in the first pipe 231 and the second pipe 232 are changed compared with the initial flow rate, and the gas pressures in the first pipe 231 and the second pipe 232 are changed compared with the initial state. The other portion of the gas flows through the gap between the first outlet end 2311 and the reference plate 22 and the gap between the second outlet end 2321 and the laser protection layer 211, respectively.
Preferably, the heights of the first outlet end 2311 and the second outlet end 2321 are the same, that is, the bottom surfaces of the first outlet end 2311 and the second outlet end 2321 are located on the same horizontal plane, the vertical distance between the reference surface and the first outlet end 2311 of the first pipeline 231 and the vertical distance between the surface of the laser protection layer 211 and the second outlet end 2321 of the second pipeline 232 are all 50 μm to 200 μm, so as to avoid that the reference plate 22 and the wafer 21 collide with the first pipeline 231 and the second pipeline 232 respectively due to too small vertical distance, and avoid that the gas returned into the first pipeline 231 and the second pipeline 232 is too small due to too large vertical distance, and further avoid that the pressure difference between the gas in the first pipeline 231 and the gas in the second pipeline 232 obtained by subsequent measurement is inaccurate.
Step S13, measuring an average pressure difference between the gases in the first pipeline 231 and the second pipeline 232 caused by a difference between the vertical distance from the reference surface to the first pipeline 231 and the vertical distance from the surface of the laser protection layer 211 to the second pipeline 232.
The reasons for the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 include 1) that the set ratio of the total flow of the compressed gas split to the initial flow in the first pipe 231 and the second pipe 232 is not 1:1, the difference of the initial flow may cause the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232, and 2) that the surface of the laser protection layer 211 is rugged, resulting in that the vertical distance from the surface of the different positions of the laser protection layer 211 to the second outlet end 2321 of the second pipe 232 is different from the vertical distance from the reference surface of the reference plate 22 to the first outlet end 2311 of the first pipe 231, and further, the pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 is caused.
The step S13 includes:
Firstly, the wafer 21 is moved so that the second outlet end 2321 of the second pipeline 211 can convey gas to the laser protection layer 211 at a plurality of positions of the wafer 21 to measure the pressure difference between the gas at the same height in the first pipeline 231 and the gas at the same height in the second pipeline 232 corresponding to each position, wherein the first outlet end 2311 and the second outlet end 2321 are the same in height, a third pipeline 233 and a fourth pipeline 234 are respectively communicated at the same height in the first pipeline 231 and the second pipeline 232, and a pressure sensor 24 is respectively communicated with the third pipeline 233 and the fourth pipeline 234 to measure the pressure difference between the third pipeline 233 and the fourth pipeline 234 as the pressure difference between the gas at the same height in the first pipeline 231 and the gas at the same height in the second pipeline 232, and the average pressure difference between the gas at the same height in the first pipeline 231 and the second pipeline 232 is obtained after the average of the pressure difference corresponding to the plurality of positions;
Then, according to the set ratio of the initial flow rates in the first pipe 231 and the second pipe 232, the average pressure difference between the gases in the first pipe 231 and the second pipe 232 caused by the difference between the vertical distance from the reference surface of the reference plate 22 to the first pipe 231 and the vertical distance from the surface of the laser protection layer 211 to the second pipe 232 is obtained by converting the average pressure difference between the gases in the first pipe 231 and the second pipe 232 at the same height in the first pipe 231 and the second pipe 232 to remove the interference of the above-described cause 1) that causes the pressure difference.
It should be noted that, when the set ratio of the initial flow rates in the first pipe 231 and the second pipe 232 is 1:1, the average pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 is the average pressure difference between the gases at the same height in the first pipe 231 and the second pipe 232 caused by the difference between the vertical distance from the reference surface of the reference plate 22 to the first pipe 231 and the vertical distance from the surface of the laser protection layer 211 to the second pipe 232.
In addition, it should be noted that, in the process of moving the wafer 21, the second outlet end 2321 of the second pipe 211 may be enabled to convey gas to a part of or all of the surface of the wafer 21, so as to measure and obtain as much pressure difference data as possible, so that the average pressure difference is more accurate. Also, the datum plate 22 may be movable or stationary during the metrology process.
Step S14, calculating to obtain an average height difference between the reference plane of the reference plate 22 and the surface of the laser protection layer 211 according to an average pressure difference between the gases at the same height in the first pipeline 231 and the second pipeline 232 caused by a difference between the vertical distance between the reference plane of the reference plate 22 and the first pipeline 231 and the vertical distance between the surface of the laser protection layer 211 and the second pipeline 232.
Wherein the average height difference between the reference plane of the reference plate 22 and the surface of the laser protection layer 211 can be calculated using a pressure and a calculation formula of the pressure, which are well known to those skilled in the art.
Step S15, subtracting the average height difference and the average thickness of the laser protection layer 211 from the height of the reference plane to obtain a dicing plane of the wafer 21.
Since the thicknesses of the laser protection layer 211 at the respective positions of the wafer 21 are substantially the same, the thicknesses of the laser protection layer 211 at the plurality of positions may be measured by a film thickness tester and averaged to obtain an average thickness of the laser protection layer 211.
The average height difference may be positive or negative, if the surface of the laser protection layer 211 at most positions is higher than the reference plane, the average height difference is negative, and if the surface of the laser protection layer 211 at most positions is lower than the reference plane, the average height difference is positive.
Since the height of the reference plane is known, by subtracting the average height difference from the height of the reference plane, the average height of the laser protection layer 211 can be obtained, and subtracting the average thickness of the laser protection layer 211, the average height of the surface of the wafer 21 can be obtained, that is, the accurate position of the plane on which most of the positions of the wafer 21 are located (i.e., the plane on which H2 in fig. 1 is located) can be obtained, and this plane is taken as the cutting plane when the wafer 21 is subsequently cut by laser, the laser is focused on this cutting plane, and the focal depth of the laser is used to cover the area above and below the cutting plane, so that the laser protection layer 211 above and below the cutting plane can be cut and removed, and the laser protection layer 211 is prevented from remaining on the cutting plane, thereby avoiding the cutting defects such as "grass growth" on the cutting plane.
From the above, the wafer dicing plane detection method of the present invention is characterized by providing a wafer and a reference plate, wherein the wafer is covered with a laser protection layer, the wafer has a rugged surface, the laser protection layer has a rugged surface, the surface of the reference plate is a horizontal reference plane, the first pipeline and the second pipeline respectively convey gas to the surface of the reference plate below and the surface of the laser protection layer, so that part of the gas is blocked by the reference plate and the laser protection layer and returns to the first pipeline and the second pipeline respectively, the average pressure difference between the first pipeline and the gas in the second pipeline caused by the difference between the vertical distance between the reference plane and the first pipeline and the vertical distance between the surface of the laser protection layer and the vertical distance between the reference plane and the second pipeline is measured, the average height difference between the reference plane of the reference plate and the surface of the laser protection layer is calculated according to the average pressure difference, and the average dicing plane is obtained by subtracting the average height difference between the reference plane and the average thickness of the reference plane and the laser protection layer, and the wafer dicing plane is prevented from being further caused by the average dicing plane.
An embodiment of the present invention provides a wafer dicing method, referring to fig. 5, the wafer dicing method includes:
Step S21, providing a wafer, wherein the wafer is covered with a laser protection layer, and the wafer is provided with an uneven surface, so that the laser protection layer is provided with the uneven surface;
S22, detecting and obtaining a cutting plane of the wafer by adopting the wafer cutting plane detection method;
And S23, emitting laser to the cutting channel of the wafer, and focusing the laser at the cutting plane to cut the laser protection layer and the cutting channel on the cutting channel.
The wafer dicing method is described in detail with reference to fig. 1, 2 and 4.
According to step S21, a wafer 21 is provided, and a laser protection layer 211 is covered on the wafer 21, where the wafer 21 has an uneven surface, so that the laser protection layer 211 has an uneven surface.
The wafer 21 includes a substrate and an insulating dielectric layer formed on the substrate, and various devices, metal layers and other structures are formed in the insulating dielectric layer, so that the surface of the insulating dielectric layer is rugged, and further, the surface of the laser protection layer 211 is rugged.
According to step S22, the dicing plane of the wafer 21 is obtained by the wafer dicing plane detecting method.
The wafer dicing plane detection method is referred to above and will not be described herein.
And the cutting plane obtained by detection is positioned in the insulating medium layer and the metal layer (such as the plane in which H2 in fig. 1 is positioned), and the laser protection layer 211 on the cutting path of the wafer and the insulating medium layer and the metal layer on the cutting path are cut.
According to step S23, a laser 31 is used to emit laser light L1 to dicing streets of the wafer 21, and the laser light L1 is focused at the dicing plane to dice the laser protection layer 211 and the dicing streets on the dicing streets.
As shown in fig. 2 and 4, the wafer dicing plane detecting device 20 and the laser 31 are fixed on a supporting platform 33, the wafer 21 is fixed on a carrying table 212, the reference plate 22 is fixed on another carrying table (the reference plate 22 and the carrying table below it are not shown in fig. 4), and the wafer 21 is moved by moving the carrying table 212, so as to complete the detection of the dicing plane of the wafer 21 and the dicing of the wafer 21.
Wherein the laser light L1 may be focused at the cutting plane by moving the stage 212 horizontally and vertically.
When the laser L1 is focused on the cutting plane, the focal depth of the laser L1 can be used to cover the area above and below the cutting plane, so that the laser protection layers 211 above and below the cutting plane can be cut and removed by the laser L1, and the laser protection layers 211 are prevented from remaining on the cutting plane, thereby avoiding poor cutting such as long grass on the cutting plane.
Preferably, the focal depth of the laser L1 ranges from 8 μm to 10 μm.
The wafer cutting method further comprises the step of cutting the substrate on the cutting path by adopting an etching process to obtain chips. The etching process may be a dry or wet etch.
The laser protection layer 211 is used for protecting the region (including the chip region) outside the dicing street from being etched when the substrate on the dicing street is diced by adopting an etching process, and the laser protection layer 211 is also used for protecting the region outside the dicing street during laser dicing, so that slag generated by laser dicing is prevented from adhering to the region outside the dicing street.
As can be seen from the above, in the wafer dicing method according to the present invention, the dicing plane of the wafer is obtained by detecting the dicing plane of the wafer by using the wafer dicing plane detecting method, so that the obtained dicing plane is more accurate, and the laser is emitted to the dicing street of the wafer, and is focused on the dicing plane, so that the defocusing phenomenon is avoided when the laser protection layer and the dicing street on the dicing street are diced, and thus the dicing defect is avoided.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (16)
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| CN114918558A (en) * | 2022-05-27 | 2022-08-19 | 武汉新芯集成电路制造有限公司 | Laser dicing apparatus and wafer dicing method |
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| CN114918558A (en) * | 2022-05-27 | 2022-08-19 | 武汉新芯集成电路制造有限公司 | Laser dicing apparatus and wafer dicing method |
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