CN115976340A - Device and method for separating antimony from crude arsenic by vacuum distillation - Google Patents
Device and method for separating antimony from crude arsenic by vacuum distillation Download PDFInfo
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- 229910052787 antimony Inorganic materials 0.000 title claims abstract description 41
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 31
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000005292 vacuum distillation Methods 0.000 title claims abstract description 14
- 238000009833 condensation Methods 0.000 claims abstract description 63
- 230000005494 condensation Effects 0.000 claims abstract description 63
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 61
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000000926 separation method Methods 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 238000004821 distillation Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 238000000746 purification Methods 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000000498 cooling water Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000978 Pb alloy Inorganic materials 0.000 description 3
- HUEBVZADHUOMHL-UHFFFAOYSA-N [As].[Pb] Chemical compound [As].[Pb] HUEBVZADHUOMHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- JEMGLEPMXOIVNS-UHFFFAOYSA-N arsenic copper Chemical compound [Cu].[As] JEMGLEPMXOIVNS-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000001093 anti-cancer Effects 0.000 description 1
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004009 herbicide Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000002917 insecticide Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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Abstract
Description
技术领域technical field
本发明涉及粗砷提纯技术领域;特别涉及一种从粗砷中真空蒸馏分离锑的装置和方法。The invention relates to the technical field of crude arsenic purification; in particular, it relates to a device and method for vacuum distillation and separation of antimony from crude arsenic.
背景技术Background technique
砷具有优异的物理化学性能,作为金属添加剂可以改善金属材料性能;砷可以和一系列金属组合成合金材料,如砷铅合金和砷铜合金,砷铅合金主要应用于生产铅蓄电池和军用铅弹,砷铜合金主要应用于生产火车燃烧室的支撑螺旋杆及高温还原气氛中的零部件。半导体材料是砷最重要的应用之一,主要应用于合成砷化镓、砷化铟等,同时也可以作为半导体材料锗和硅的掺杂元素,掺砷后将大大提高半导体导电能力。作为第二代半导体的核心材料,砷已成为支撑高科技发展、新产品开发的关键材料。砷还具有医疗价值,研究证明砷在抗癌邻域发挥重要作用。砷同时也是制备除草剂、杀虫剂、防腐剂、颜料等材料的重要原料。随着砷产业的发展,砷在硒在冶金、材料、化工和医疗等领域充当着越来越重要的角色。Arsenic has excellent physical and chemical properties. As a metal additive, it can improve the properties of metal materials; arsenic can be combined with a series of metals to form alloy materials, such as arsenic-lead alloy and arsenic-copper alloy. Arsenic-lead alloy is mainly used in the production of lead batteries and military lead bullets , arsenic-copper alloys are mainly used in the production of supporting screw rods for train combustion chambers and parts in high-temperature reducing atmospheres. Semiconductor material is one of the most important applications of arsenic. It is mainly used in the synthesis of gallium arsenide and indium arsenide. It can also be used as a doping element for semiconductor materials germanium and silicon. Doping arsenic will greatly improve the conductivity of semiconductors. As the core material of the second-generation semiconductor, arsenic has become a key material supporting high-tech development and new product development. Arsenic also has medical value, and studies have proved that arsenic plays an important role in the field of anti-cancer. Arsenic is also an important raw material for the preparation of herbicides, insecticides, preservatives, pigments and other materials. With the development of the arsenic industry, arsenic plays an increasingly important role in the fields of metallurgy, materials, chemical industry and medical treatment.
砷大多伴生在锡、铅、锌、铜、金等有色金属矿中,单独的砷矿床很少,我国矿产资源回收量已远超过当前砷的需求量,因此,单独的砷矿目前一般已不再开采,主要从有色冶炼二次资源中含砷较高的高砷烟尘和硫化砷渣中提取利用砷,由于原料成分复杂,尤其是同主族杂质锑在生产过程中一起进入成品中,含量较高导致生产出来的工业砷品级低,销售困难且价格低。而高品级砷供不应求且价格高,开发有效的粗砷分离锑的装备和方法有利于推进含砷物料的无害化与资源化处置技术发展,生产高品级砷创造良好的社会与经济效益。Most of the arsenic is associated with tin, lead, zinc, copper, gold and other non-ferrous metal ores. There are very few independent arsenic deposits. The recovery of mineral resources in my country has far exceeded the current demand for arsenic. Therefore, there are generally no arsenic deposits alone. Re-mining mainly extracts and utilizes arsenic from high-arsenic dust and arsenic sulfide slag with high arsenic content in the secondary resources of non-ferrous smelting. Due to the complex composition of raw materials, especially antimony, which is the main group impurity, enters the finished product during the production process. Higher levels lead to low-grade industrial arsenic produced, making it difficult to sell and low in price. However, the supply of high-grade arsenic is in short supply and the price is high. The development of effective equipment and methods for separating antimony from crude arsenic is conducive to promoting the development of harmless and resourceful disposal of arsenic-containing materials, and the production of high-grade arsenic will create good social and economic benefits.
目前提纯砷分离锑的方法主要有化学提纯法和物理提纯法。化学提纯法通过将砷氯化精馏提纯,再通过氢气还原得到高品级砷。CN103184354A公开了一种高纯砷的制备方法,粗砷通过真空蒸馏-氯气氯化-精馏提纯-氢气还原四个步骤获得高纯砷。该方法是制备高品级砷的主流方法,但流程长、对设备要求高、生产过程存在安全风险、生产成本高、产品质量不稳定。物理提纯法是根据粗砷中各元素在不同温度下饱和蒸气压不同,或添加合金与杂质元素生成难挥发化合物的方法,在一定温度、体系压力条件下,饱和蒸气压高的砷元素优先挥发、冷凝,从而与其他杂质元素分离。CN101054168A公开了一种高纯砷的生产方法,首先将砷和铅按1:1.5~4的比例在坩埚中加热制备砷铅合金,将坩埚其置入真空罐中,连接一锥形冷凝器,抽真空加热,砷在冷凝器上冷凝,杂质元素留在残留物中实现分离,得到高品级砷。该方法质量稳定,成本低,但是生产过程劳动强度大。CN112226633A公开了一种可降低工业砷中锑含量的装置及其生产方法,所述装置加热炉、真空罐体、装料坩埚、耐火材料层、锥型冷凝器、冷凝分流筛板、真空系统组成;该装置结构较为简单,处理流程较短,但是过程较难控制,对原料要求较高。At present, the methods for purifying arsenic and separating antimony mainly include chemical purification and physical purification. The chemical purification method obtains high-grade arsenic by chlorinating and rectifying the arsenic, and then reducing it with hydrogen. CN103184354A discloses a method for preparing high-purity arsenic. Crude arsenic is obtained through four steps of vacuum distillation-chlorine chlorination-rectification purification-hydrogen reduction. This method is the mainstream method for preparing high-grade arsenic, but it has a long process, high requirements for equipment, safety risks in the production process, high production cost, and unstable product quality. The physical purification method is based on the different saturated vapor pressures of the elements in crude arsenic at different temperatures, or the method of adding alloys and impurity elements to form refractory compounds. Under certain temperature and system pressure conditions, arsenic elements with high saturated vapor pressures are preferentially volatilized , Condensed, thus separated from other impurity elements. CN101054168A discloses a production method of high-purity arsenic. First, arsenic and lead are heated in a crucible at a ratio of 1:1.5 to 4 to prepare an arsenic-lead alloy. The crucible is placed in a vacuum tank and connected to a conical condenser. Vacuum heating, arsenic condenses on the condenser, impurity elements remain in the residue to achieve separation, and high-grade arsenic is obtained. The method has stable quality and low cost, but the labor intensity of the production process is high. CN112226633A discloses a device capable of reducing antimony content in industrial arsenic and its production method. The device consists of a heating furnace, a vacuum tank body, a charging crucible, a refractory material layer, a conical condenser, a condensing shunt sieve plate, and a vacuum system ; The structure of the device is relatively simple, the processing flow is relatively short, but the process is difficult to control, and the requirements for raw materials are relatively high.
发明内容Contents of the invention
针对粗砷提纯现存问题,本发明提供一种粗砷中真空蒸馏分离锑的装置;在装置中形成一定的温度梯度,根据饱和蒸气压和冷凝温度差异,砷和锑蒸气通过分级冷凝在不同位置冷凝,实现高效分离;本发明通过以下技术方案实现:Aiming at the existing problems of crude arsenic purification, the present invention provides a device for vacuum distillation and separation of antimony from crude arsenic; a certain temperature gradient is formed in the device, and arsenic and antimony vapors are condensed in different positions by stages according to the difference in saturated vapor pressure and condensation temperature Condensation to realize high-efficiency separation; the present invention is realized through the following technical solutions:
一种从粗砷中真空蒸馏分离锑的装置,包括反应器罩1、测温装置2、冷却装置3、冷凝塔4、加热装置5、连接法兰6、真空罐体7、装料坩埚8、抽真空装置9和控制系统10;所述装料坩埚8和加热装置5置于真空罐体7底部,加热装置5对装料坩埚8进行四周加热,装料坩埚8和加热装置5上方放置多级冷凝塔4,多级冷凝塔4内设有多个冷凝片和中央螺杆,冷凝片通过螺母固定在中央螺杆上,通过调节螺母调整冷凝片的位置,冷凝片上开有气流孔,相邻两个冷凝片上的气流孔相对布置,冷凝片上设有固定测温装置2;所述冷凝塔4上方为反应器罩1,反应器罩1与抽真空装置9连接,抽真空装置9通过法兰与真空罐体连接,反应器罩1上设有冷却装置3,低沸点杂质和尾气在反应器罩上收集;整个装置与控制系统10连接。A device for vacuum distillation and separation of antimony from crude arsenic, comprising a
本发明所述冷凝塔4为圆筒状,冷凝片通过垫圈进行固定。The
本发明所述冷凝塔4通过改变冷凝片数量,实现多级冷凝,达到冷凝级数可控可调的目的;通过改变用于固定冷凝片的螺母和垫圈的位置,实现级间距精确可控,达到级间距可随想要达到的实验效果进行相对精确调控的目的;通过改变螺母和垫圈的位置,使冷凝片在螺杆上移动,实现各级冷凝片相对加热面高度精确可控,达到冷凝温区可随想要达到的实验效果进行相对精确调控的目的。The
优选的,本发明所述装料坩埚8一侧的真空罐体7和加热装置5上设有密封门,便于取出和放入装料坩埚8。Preferably, the
优选的,本发明所述冷凝塔4的高度为26.0cm,冷凝片厚度为5mm,螺母厚度为10.5mm,垫圈厚度2.5mm。Preferably, the height of the
优选的,本发明将原料加入真空罐体7内的装料坩埚8中,开启抽真空装置9和冷却装置3,蒸气在冷凝塔4中进行冷凝过程,冷凝温区从设定温度到80℃全覆盖,通过改变冷凝片的级数、位置以及间距,挥发出来的锑蒸气和部分砷蒸气在温度较高的冷凝盘上冷凝,低沸点杂质和尾气在炉体上部的反应器罩上收集;在中低温区冷凝盘收集得到锑含量较低的砷。Preferably, in the present invention, raw materials are added to the charging
优选的,本发明所述原料为含锑0.5%~2%,纯度96%~98%的粗砷;Preferably, the raw material of the present invention is crude arsenic containing 0.5% to 2% antimony and a purity of 96% to 98%;
优选的,本发明所述真空罐体7内压强为1~10000Pa,蒸馏温度为400~650℃,蒸馏时间为1~7h。Preferably, the pressure inside the
本发明的有益效果:Beneficial effects of the present invention:
(1)本方法生产过程中无任何含砷废气、废水产生,安全无污染;炉子结构合理,该装置装料坩埚和加热装置在真空罐内部,传热效率高,使得粗砷熔化快,生产效率大大提高,降低生产成本;同时改变了传统真空炉外部加热方式,仅仅是装料坩埚四周加热,提高了加热效率,内部空间充足。(1) There is no arsenic-containing waste gas and waste water produced in the production process of this method, which is safe and pollution-free; the furnace structure is reasonable, and the charging crucible and heating device of the device are inside the vacuum tank, and the heat transfer efficiency is high, so that the crude arsenic is melted quickly and the production The efficiency is greatly improved and the production cost is reduced; at the same time, the external heating method of the traditional vacuum furnace is changed, and only the surrounding of the crucible is heated, which improves the heating efficiency and has sufficient internal space.
(2)本发明所述装置可以直接取出装料坩埚,改善了传统真空炉取放料困难的问题;顶部设有冷却装置3,可以控制反应器罩温度低于80度,使低沸点杂质和尾气在反应器罩上收集。(2) The device of the present invention can directly take out the charging crucible, which improves the difficult problem of taking and discharging materials in traditional vacuum furnaces; the top is provided with a
(3)本发明所述装置冷凝区为多级冷凝塔,可通过调节冷凝片数量,实现多级冷凝;可通过调节冷凝片间距,实现级间距精准控制;可通过调节冷凝片在中央螺杆上的位置,实现冷凝温区的控制;上述三者协同调控,从而获得混合蒸气在真空蒸馏过程中不同级数、不同行程以及不同温区的需要,易于实现分离效果的精细调控;冷凝塔为圆筒状,冷凝蒸汽不会挥发到真空炉壁上,方便清理。(3) The condensing zone of the device described in the present invention is a multi-stage condensation tower, which can realize multi-stage condensation by adjusting the number of condensing fins; can realize precise control of the stage spacing by adjusting the spacing of the condensing fins; can adjust the condensation fins on the central screw position to realize the control of the condensing temperature zone; the above-mentioned three coordinate regulation, so as to obtain the needs of different stages, different strokes and different temperature zones of the mixed vapor in the vacuum distillation process, and it is easy to realize the fine control of the separation effect; the condensing tower is circular Cylindrical, the condensed steam will not volatilize to the vacuum furnace wall, which is convenient for cleaning.
(4)本发明所述装置顶部设有抽真空装置,实现真空炉内气压和温度的双重控制,更好的实现冷凝条件的控制。(4) The top of the device of the present invention is provided with a vacuum device to realize dual control of air pressure and temperature in the vacuum furnace, and better control of condensation conditions.
(5)本发明工艺流程短,粗砷通过真空蒸馏分级冷凝,经真空气化分离提纯后,可以得到含锑不高于0.04%的砷,产品质量高,杂质锑元素分离效果好,所需设备简单,提纯成本低,回收率高,作业环境安全友好。(5) The technological process of the present invention is short, thick arsenic is condensed through vacuum distillation classification, after vacuum gasification separation and purification, can obtain the arsenic that contains antimony not higher than 0.04%, the product quality is high, and impurity antimony element separation effect is good, required The equipment is simple, the purification cost is low, the recovery rate is high, and the working environment is safe and friendly.
(6)本方法原料适应性广、可操作条件广,能够找到含砷锑量不同的原料,在不同条件下的最佳冷凝温区。(6) The method has wide raw material adaptability and wide operable conditions, and can find raw materials with different amounts of arsenic and antimony, and optimal condensation temperature zones under different conditions.
附图说明Description of drawings
图1是本发明装置示意图。Fig. 1 is a schematic diagram of the device of the present invention.
图2为本发明所述冷凝盘的结构示意图。Fig. 2 is a structural schematic diagram of the condensation pan of the present invention.
图3为本发明所述冷凝盘的连接示意图。Fig. 3 is a schematic diagram of the connection of the condensation pan of the present invention.
图中:1-反应器罩、2-测温装置、3-冷却装置、4-冷凝塔、5-加热装置、6-连接法兰、7-真空罐体、8-装料坩埚、9-抽真空装置;10-控制系统。In the figure: 1-reactor cover, 2-temperature measuring device, 3-cooling device, 4-condensing tower, 5-heating device, 6-connecting flange, 7-vacuum tank, 8-charging crucible, 9- Vacuum device; 10-control system.
具体实施方式Detailed ways
下面结合附图和具体实施方式,对本发明作进一步说明,但本发明的保护范围并不限于所述内容。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to the content described.
实施例1Example 1
一种从粗砷中真空蒸馏分离锑的装置,包括反应器罩1、测温装置2、冷却装置3、冷凝塔4、加热装置5、连接法兰6、真空罐体7、装料坩埚8、抽真空装置9和控制系统10;所述装料坩埚8和加热装置5置于真空罐体7底部,加热装置5对装料坩埚8进行四周加热,提高加热效率,避免传统设备对整个炉体加热导致的热损失较多;装料坩埚8和加热装置5上方放置冷凝塔4,所述冷凝塔4为圆筒状,高度为26.0cm,冷凝塔4内置有中央螺杆,冷凝片套在中央螺杆上,两侧用螺母或者垫圈进行固定,冷凝片上开有气流孔,相邻两个冷凝片的气流孔相对放置,冷凝塔4外设有固定测温装置2;冷凝区内混合蒸气的行程由冷凝片的数量决定,各级冷凝区的温度和间距由冷凝片的位置决定,并由螺母和垫圈进行固定。混合蒸气在冷凝塔内冷凝,冷凝温区覆盖范围广、冷凝温度梯度明显、冷凝区间灵活可控,所收集物料更能真实反应此处冷凝相组成对应的冷凝条件;所述冷凝塔4上方为反应器罩1,反应器罩1与抽真空装置9连接,抽真空装置9通过法兰与真空罐体连接,反应器罩1上设有冷却装置3,低沸点杂质和尾气在反应器罩上收集;整个装置与控制系统10连接;所述装料坩埚8一侧的真空罐体7和加热装置5上设有密封门,便于取出和放入装料坩埚8。A device for vacuum distillation and separation of antimony from crude arsenic, comprising a
实施例2Example 2
将含砷96.88%,含锑0.32%的300g块状粗砷处理至直径小于1cm的小块状,放入装料坩埚8,将装料坩埚8放入带有加热装置5的真空罐体7中,在装料坩埚8上部放冷凝塔4,冷凝塔内每隔4.7cm设置一个冷凝片并固定,构成5个等间距冷凝区间,装好冷凝塔4后安装反应器罩1,连接抽真空装置9,控制压强为1Pa,蒸馏温度为420-470℃,蒸馏时间3h,待压强稳定后升温,升温速率为10℃/min,同时打开冷却水开关。Process 300g of block-shaped crude arsenic containing 96.88% arsenic and 0.32% antimony to a small block with a diameter of less than 1 cm, put it into a charging
加热过程中,装料坩埚8中的砷和锑蒸发形成蒸气,经过冷凝塔4,使挥发出来的锑蒸气和部分砷蒸气在温度较高的冷凝片上冷凝,低沸物在炉体上部收集装置冷凝,在中低温区冷凝片收集得到锑含量较低的砷,冷凝产物主要集中在170~80℃温区之间;待反应结束降温至100℃以下,关闭冷却水,停泵,收集物料。实验过程中,测得各冷凝温区为I区352.8℃、Ⅱ区318.7℃、Ⅲ区220℃、Ⅳ区169.9℃、Ⅴ区134.4℃。During the heating process, the arsenic and antimony in the charging
Ⅰ区收集51.2g,Ⅱ区收集11.4g,Ⅲ区收集19.4g,Ⅳ区收集135.7g,Ⅴ区收集53.3g,反应器罩收集23.7g,坩埚内收集0.9g,挥发率达98.23%,直收率69.43%;将得到的砷参照中华人民共和国有色金属行业标准TS/T68-2014,采用电感耦合等离子体质谱仪(ICP-MS)进行检测,检测结果砷纯度>99%,其中锑含量0.19%。51.2g was collected in zone Ⅰ, 11.4g in zone Ⅱ, 19.4g in zone Ⅲ, 135.7g in zone Ⅳ, 53.3g in zone Ⅴ, 23.7g in the reactor cover, 0.9g in the crucible, and the volatilization rate reached 98.23%. The yield is 69.43%; the obtained arsenic is detected with reference to the non-ferrous metal industry standard TS/T68-2014 of the People's Republic of China by using an inductively coupled plasma mass spectrometer (ICP-MS). %.
实施例3Example 3
将含砷96.72%,含锑0.81%的300g块状粗砷处理至直径小于1cm的小块状,放入装料坩埚8,将装料坩埚8放入带有加热装置5的真空罐体7中,在装料坩埚8上部放冷凝塔4,冷凝塔内每隔4.7cm设置一个冷凝片并固定,构成5个等间距冷凝区间,与测温点刚好对应,装好冷凝塔4后安装反应器罩1,连接抽真空装置9,控制压强为5000Pa,蒸馏温度为480-520℃,蒸馏时间6h,待压强稳定后升温,升温速率为10℃/min,同时打开冷却水开关。Treat 300 g of block-shaped crude arsenic containing 96.72% arsenic and 0.81% antimony to a small block with a diameter of less than 1 cm, put it into a charging
加热过程中,装料坩埚8的砷和锑蒸发形成蒸气,经过冷凝塔4,使挥发出来的锑蒸气和部分砷蒸气在温度较高的冷凝片上冷凝,低沸物在炉体上部收集装置冷凝,在中低温区冷凝片收集得到锑含量较低的砷,冷凝产物主要集中在230~80℃温区之间;待反应结束降温至100℃以下,关闭冷却水,停泵,收集物料。实验过程中,各冷凝片对应冷凝温区为I区432.9℃、Ⅱ区391.0℃、Ⅲ区278.2℃、Ⅳ区229.5℃、Ⅴ区174.1℃。During the heating process, the arsenic and antimony in the charging
Ⅰ区收集0.7g,Ⅱ区收集5.7g,Ⅲ区收集17g,Ⅳ区收集71.2g,Ⅴ区收集130.3g,反应器罩收集66.5g,坩埚内收集0.5g,挥发率达97.13%,直收率72.83%;将得到的砷参照中华人民共和国有色金属行业标准TS/T68-2014,采用电感耦合等离子体质谱仪(ICP-MS)进行检测,检测结果砷纯度>99%,其中锑含量0.04%。Collect 0.7g in zone Ⅰ, 5.7g in zone Ⅱ, 17g in zone Ⅲ, 71.2g in zone Ⅳ, 130.3g in zone Ⅴ, 66.5g in the reactor hood, and 0.5g in the crucible. The volatilization rate reaches 97.13%. The yield is 72.83%; the obtained arsenic is detected with reference to the non-ferrous metal industry standard TS/T68-2014 of the People's Republic of China by using an inductively coupled plasma mass spectrometer (ICP-MS). .
实施例4Example 4
将含砷96.12%,含锑1.81%的300g块状粗砷处理至直径小于1cm的小块状,放入装料坩埚8,将装料坩埚8放入带有加热装置5的真空罐体7中,在装料坩埚8上部放放冷凝塔4,冷凝塔内每隔4.7cm设置一个冷凝片并固定,构成5个等间距冷凝区间,与测温点对应,装好冷凝塔4后安装反应器罩1,连接抽真空装置9,通CO气体,控制压强为10000Pa,蒸馏温度为580-620℃,蒸馏时间7h,待压强稳定后升温,升温速率为10℃/min,同时打开冷却水开关。Process 300g of block-shaped crude arsenic containing 96.12% arsenic and 1.81% antimony to a small block with a diameter of less than 1 cm, put it into a charging
加热过程中,装料坩埚8的砷和锑蒸发形成蒸气,经过冷凝塔4,使挥发出来的锑蒸气和部分砷蒸气在温度较高的冷凝片上冷凝,低沸物在炉体上部收集装置冷凝,在中低温区冷凝片收集得到锑含量较低的砷,冷凝产物主要集中在480~310℃温区之间;待反应结束降温至100℃以下,关闭冷却水,停泵,收集物料;实验过程中,各冷凝片对应冷凝温区为I区484.8℃、Ⅱ区436.7℃、Ⅲ区314.6℃、Ⅳ区236.1℃、Ⅴ区173.6℃。During the heating process, the arsenic and antimony in the charging
Ⅰ区收集32.8g,Ⅱ区收集184.8g,Ⅲ区收集22.5g,Ⅳ区收集1.2g,Ⅴ区收集0.9g,反应器罩收集35.4g,坩埚内收集1.6g,挥发率达99.47%,直收率70.10%;将得到的砷参照中华人民共和国有色金属行业标准TS/T68-2014,采用电感耦合等离子体质谱仪(ICP-MS)进行检测,检测结果砷纯度>99%,其中锑含量0.14%。32.8g was collected in zone Ⅰ, 184.8g in zone Ⅱ, 22.5g in zone Ⅲ, 1.2g in zone Ⅳ, 0.9g in zone Ⅴ, 35.4g in the reactor cover, 1.6g in the crucible, and the volatilization rate reached 99.47%. The yield is 70.10%; the obtained arsenic is detected with reference to the non-ferrous metal industry standard TS/T68-2014 of the People's Republic of China by using an inductively coupled plasma mass spectrometer (ICP-MS). %.
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