CN116002609A - Micro-channel structure based on three-dimensional integrated TSV adapter plate and preparation method - Google Patents
Micro-channel structure based on three-dimensional integrated TSV adapter plate and preparation method Download PDFInfo
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- CN116002609A CN116002609A CN202211670983.0A CN202211670983A CN116002609A CN 116002609 A CN116002609 A CN 116002609A CN 202211670983 A CN202211670983 A CN 202211670983A CN 116002609 A CN116002609 A CN 116002609A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 241000724291 Tobacco streak virus Species 0.000 claims abstract description 156
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000000059 patterning Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
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- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
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- 238000004220 aggregation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
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- 238000002513 implantation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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Abstract
The invention discloses a micro-channel structure based on a three-dimensional integrated TSV adapter plate and a preparation method thereof, wherein the structure comprises a top TSV adapter plate and a bottom TSV adapter plate; etching is performed on the top TSV adapter plate to form a plurality of TSV array columns, and gaps among the TSV array columns form micro-channels; the bottom TSV adapter plate and the top TSV adapter plate are bonded through metal, and micro-channel inlets and outlets and TSVs corresponding to TSVs on the top TSV adapter plate are formed on the bottom TSV adapter plate through etching. The micro-channel structure of the three-dimensional integrated TSV adapter plate provided by the invention carries out channel etching on the silicon TSV adapter plate to form the TSV array column which can be used as a fin, so that disturbance is enhanced, and the heat transfer effect of the micro-channel is enhanced; and the chip can be used as an electrical interconnection interface to lead out and interconnect a plurality of interfaces of the chip, and the signal density is high.
Description
Technical Field
The invention belongs to the field of integrated circuit packaging, and particularly relates to a micro-channel structure based on a three-dimensional integrated TSV adapter plate and a preparation method thereof.
Background
Along with the continuous improvement of the performance and the integration level of the electronic device, the power consumption of the electronic device is gradually increased; simultaneously along with 3D stacking technology of chipsThe technology of chip or device integration has been miniaturized and lightened by techniques such as surgery and 2.5D three-dimensional integration, and the integrated power density of electronic devices has been further increased from the initial 10W/cm 2 Has been developed to 100W/cm on chip 2 The increase of power density will lead to the occurrence of high temperature regions in the process of chip, module and even system integration, and further to the decrease of the working performance and the gradual decrease of the working life of electronic devices, so that the thermal management will become a key problem for restricting the development of microelectronics.
In the three-dimensional integration technology, high-performance chips are stacked by silicon base, and the heat of a single chip can reach 100W/cm 2 If a plurality of high-performance chips exist in the device, the traditional passive heat dissipation mode is difficult to realize the transfer of high-density heat, and the heat aggregation can greatly reduce the performance of the chips; the heat resistance of the chip heat transmission link is reduced by utilizing an advanced active heat management mode, heat is efficiently transferred in the future, an embedded micro-runner is directly introduced to a silicon adapter plate in a three-dimensional integration technology, the original electrical interconnection function of the adapter plate is not influenced, the optimization of a chip heat transmission path is realized, the heat dissipation capacity of a three-dimensional integrated product is further improved, and the performance of the three-dimensional integrated product is ensured to be free from the restriction of thermal problems.
Fifty-eight of medium electricity propose a heat dissipation type TSV keysets of embedded microchannel, this keysets divide into microchannel recess layer and TSV apron layer, wherein microchannel recess layer and TSV apron layer pass through the bond layer and connect, and microchannel recess layer includes microchannel recess and keysets body through-hole through the etching formation, is equipped with lateral wall metallization layer in the keysets body through-hole, and TSV apron layer includes microfluidic access & exit and the TSV through-hole through the etching formation, is equipped with lateral wall metallization layer in the TSV through-hole. However, the technology does not adopt TSV through holes as fins for heat dissipation enhancement, and heat dissipation under micro-scale may be limited, so that only a single signal transmission process is realized.
Disclosure of Invention
In view of the above, the invention provides a micro-channel structure based on a three-dimensional integrated TSV adapter plate and a preparation method thereof, wherein the structure utilizes TSV array columns after channel etching as fins, so that disturbance is enhanced, heat transfer effect of the micro-channel is enhanced, and a plurality of interfaces of a chip are electrically interconnected through the TSV array columns, and signal density is improved.
To achieve the purpose, a first aspect of the invention provides a micro-channel structure based on a three-dimensional integrated TSV adapter plate, wherein the structure comprises a top TSV adapter plate and a bottom TSV adapter plate;
etching the top TSV adapter plate to form a plurality of TSV array columns, and forming micro-channels in gaps among the TSV array columns;
the bottom TSV adapter plate and the top TSV adapter plate are bonded through metal, and micro-channel inlets and outlets and TSVs corresponding to TSVs on the top TSV adapter plate are formed on the bottom TSV adapter plate through etching.
Preferably, the TSV array column includes one or more TSVs.
Preferably, metal imaging is performed on the periphery of the TSV adapter plates at the bottom and the top of the TSV array column.
Preferably, the TSV array column is a cylinder, a polyhedron or an elliptic cylinder.
Preferably, the top of the bottom TSV adapter plate is metal-patterned, and the metal-patterned areas are in one-to-one correspondence with the metal-patterning of the top TSV adapter plate.
Preferably, the materials of the top TSV adapter plate and the bottom TSV adapter plate are silicon.
Preferably, the metal material used for the metal imaging is gold or copper.
The invention provides a preparation method of a micro-channel structure based on a three-dimensional integrated TSV adapter plate, which comprises the following steps:
s1: on an adapter plate A containing a TSV array, carrying out metal patterning on the surface of the adapter plate A according to the designed space, size and density of TSV array columns to form a bonding layer, wherein the thickness and the material of the bonding layer are determined according to the specific process of a product;
s2: according to the actual requirements of micro-channel spacing, TSV array column size and TSV array column density, forming TSV array columns on the adapter plate A through one-time etching, and obtaining a top TSV adapter plate, wherein the one-time etching depth is smaller than the thickness of the adapter plate A;
s3: on an adapter plate B containing a TSV array, carrying out metal patterning on the surface of the adapter plate B according to the space, the size and the density of the TSV array columns to obtain a bonding layer, wherein the patterning corresponds to the patterning of the adapter plate A one by one;
s4: carrying out primary etching on the adapter plate B according to the size and the interval of the inlet and outlet of the micro-channel in actual demand to form the inlet and outlet of the micro-channel, and obtaining the bottom TSV adapter plate, wherein the depth of the primary etching is larger than the thickness of the adapter plate B;
s5: and through a high-temperature hot-press bonding process, bonding the upper layer and the lower layer of the TSV adapter plate with the bottom TSV adapter plate through bonding metal, and obtaining the micro-channel structure based on the three-dimensional integrated TSV adapter plate.
The beneficial effects of the invention are as follows: the micro-channel structure of the three-dimensional integrated TSV adapter plate provided by the invention carries out channel etching on the silicon TSV adapter plate to form the TSV array column which can be used as a fin, so that disturbance is enhanced, and the heat transfer effect of the micro-channel is enhanced; and the chip can be used as an electrical interconnection interface to lead out and interconnect a plurality of interfaces of the chip, and the signal density is high.
Drawings
Fig. 1 is a schematic diagram of a micro-fluidic channel structure of a three-dimensional integrated TSV interposer according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure of a top TSV interposer according to an embodiment of the present invention;
fig. 3 is a schematic top view of a top TSV adapter plate according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure of a bottom TSV interposer according to an embodiment of the present invention;
fig. 5 is a schematic top view of a bottom TSV adapter plate according to an embodiment of the present invention;
in the figure: 1. the top TSV adapter plate 2, the bottom TSV adapter plate 3 and the metal layer 1-1 TSV array column 1-2 TSV2-1 are bonded, and the micro-channel is provided with an inlet and an outlet.
Detailed Description
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
The invention will now be described in detail with reference to the drawings and specific examples.
The micro-channel structure based on the three-dimensional integrated TSV adapter plate is shown in fig. 1, and comprises: a top TSV interposer 1 and a bottom TSV interposer 2, wherein:
as shown in fig. 2 and 3, a plurality of TSV array columns 1-1 are etched on the top TSV interposer 1, and micro channels are formed in gaps between the TSV array columns 1-1.
As an embodiment, each TSV array column 1-1 further includes one or more TSVs 1-2, and the TSV array column 1-1 not only can be used as a fin for micro-channel heat dissipation, but also can be used for electrical interconnection interfaces to lead out and interconnect multiple interfaces of a chip.
The periphery of the bottom and the top TSV adapter plates of the TSV array column 1-1 are subjected to metal imaging, and a bonding metal layer 3 is arranged and used for bonding with the bottom TSV adapter plate 2.
As an example, the TSV array column 1-1 is any one of a cylinder, a polyhedron, or an elliptic cylinder.
As shown in fig. 3 and 4, the bottom TSV adapter plate 2 is bonded to the top TSV adapter plate 1 through the metal bonding layer 3, and the micro-channel inlets and outlets 2-1 and TSVs corresponding to the TSVs 1-2 on the top TSV adapter plate 1 are etched on the bottom TSV adapter plate 2.
As an embodiment, the top of the bottom TSV adapter plate 2 is metal patterned, and the metal patterned areas are in one-to-one correspondence with the metal patterning of the top TSV adapter plate 1, so as to realize bonding with the top TSV adapter plate 1.
After the top TSV adapter plate 1 and the bottom TSV adapter plate 2 are bonded, as shown in fig. 1, fluid enters a flow channel through a micro-flow channel inlet and outlet 2-1 and is subjected to full heat exchange with the TSV array column 1-2, the TSV array column 1-2 transmits electrical signals of the top TSV adapter plate 1 to the bottom TSV adapter plate 2, and the bottom TSV adapter plate 2 is connected with a PCB through a ball implantation mode and the like, so that electrical signal output is achieved.
As an embodiment, the top TSV interposer and the bottom TSV interposer are both silicon; the metal material used for metal imaging is gold or copper.
The preparation method of the micro-channel structure based on the three-dimensional integrated TSV adapter plate comprises the following steps:
s1: on an adapter plate A containing a TSV array, carrying out metal patterning on the surface of the adapter plate A according to the designed space, size and density of TSV array columns to form a bonding layer, wherein the thickness and the material of the bonding layer are determined according to the specific process of a product;
s2: according to the actual requirements of micro-channel spacing, TSV array column size and TSV array column density, forming TSV array columns on the adapter plate A through one-time etching, and obtaining a top TSV adapter plate, wherein the one-time etching depth is smaller than the thickness of the adapter plate A;
s3: on an adapter plate B containing a TSV array, carrying out metal patterning on the surface of the adapter plate B according to the space, the size and the density of the TSV array columns to obtain a bonding layer, wherein the patterning corresponds to the patterning of the adapter plate A one by one;
s4: carrying out primary etching on the adapter plate B according to the size and the interval of the inlet and outlet of the micro-channel in actual demand to form the inlet and outlet of the micro-channel, and obtaining the bottom TSV adapter plate, wherein the depth of the primary etching is larger than the thickness of the adapter plate B;
s5: and through a high-temperature hot-press bonding process, bonding the upper layer and the lower layer of the TSV adapter plate with the bottom TSV adapter plate through bonding metal, and obtaining the micro-channel structure based on the three-dimensional integrated TSV adapter plate.
Claims (8)
1. The micro-channel structure based on the three-dimensional integrated TSV adapter plate is characterized by comprising a top TSV adapter plate and a bottom TSV adapter plate;
etching the top TSV adapter plate to form a plurality of TSV array columns, and forming micro-channels in gaps among the TSV array columns; the bottom TSV adapter plate and the top TSV adapter plate are bonded through metal, and micro-channel inlets and outlets and TSVs corresponding to TSVs on the top TSV adapter plate are formed on the bottom TSV adapter plate through etching.
2. The three-dimensional integrated TSV interposer-based micro flow channel structure of claim 1 wherein the TSV array column includes one or more TSVs.
3. The micro-fluidic channel structure based on the three-dimensional integrated TSV adapter plate according to claim 1, wherein metal imaging is performed on the periphery of the bottom and the top TSV adapter plates of the TSV array columns.
4. The three-dimensional integrated TSV interposer-based micro flow channel structure of claim 1 wherein the TSV array columns are cylinders, polyhedrons or elliptic columns.
5. The micro flow channel structure based on the three-dimensional integrated TSV adapter plate according to claim 1, wherein the top of the bottom TSV adapter plate is subjected to metal patterning, and the metal patterning areas are in one-to-one correspondence with the metal patterning of the top TSV adapter plate.
6. The three-dimensional integrated TSV interposer-based micro flow channel structure of claim 1 wherein both the top TSV interposer and the bottom TSV interposer material are silicon.
7. The micro flow channel structure based on the three-dimensional integrated TSV adapter plate according to any one of claims 3 or 5, wherein the metal material used for the metal imaging is gold or copper.
8. The preparation method of the micro-channel structure based on the three-dimensional integrated TSV adapter plate is characterized by comprising the following steps of:
s1: on an adapter plate A containing a TSV array, carrying out metal patterning on the surface of the adapter plate A according to the designed space, size and density of TSV array columns to form a bonding layer, wherein the thickness and the material of the bonding layer are determined according to the specific process of a product;
s2: according to the actual requirements of micro-channel spacing, TSV array column size and TSV array column density, forming TSV array columns on the adapter plate A through one-time etching, and obtaining a top TSV adapter plate, wherein the one-time etching depth is smaller than the thickness of the adapter plate A;
s3: on an adapter plate B containing a TSV array, carrying out metal patterning on the surface of the adapter plate B according to the space, the size and the density of the TSV array columns to obtain a bonding layer, wherein the patterning corresponds to the patterning of the adapter plate A one by one;
s4: carrying out primary etching on the adapter plate B according to the size and the interval of the inlet and the outlet of the micro-channel in actual demand to form the inlet and the outlet of the micro-channel, and obtaining the bottom TSV adapter plate, wherein the depth of the primary etching is larger than the thickness of the adapter plate B;
s5: and through a high-temperature hot-press bonding process, bonding the upper layer and the lower layer of the TSV adapter plate with the bottom TSV adapter plate through bonding metal, and obtaining the micro-channel structure based on the three-dimensional integrated TSV adapter plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211670983.0A CN116002609A (en) | 2022-12-26 | 2022-12-26 | Micro-channel structure based on three-dimensional integrated TSV adapter plate and preparation method |
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| CN202211670983.0A CN116002609A (en) | 2022-12-26 | 2022-12-26 | Micro-channel structure based on three-dimensional integrated TSV adapter plate and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219518A (en) * | 2023-11-07 | 2023-12-12 | 之江实验室 | Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117219518A (en) * | 2023-11-07 | 2023-12-12 | 之江实验室 | Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof |
| CN117219518B (en) * | 2023-11-07 | 2024-04-23 | 之江实验室 | Micro-channel substrate and manufacturing method thereof, on-chip packaging structure and manufacturing method thereof |
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