CN116088262A - Photomask mark and manufacturing method thereof - Google Patents
Photomask mark and manufacturing method thereof Download PDFInfo
- Publication number
- CN116088262A CN116088262A CN202211500061.5A CN202211500061A CN116088262A CN 116088262 A CN116088262 A CN 116088262A CN 202211500061 A CN202211500061 A CN 202211500061A CN 116088262 A CN116088262 A CN 116088262A
- Authority
- CN
- China
- Prior art keywords
- grooves
- identification
- groove
- photomask
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
技术领域technical field
本申请涉及光掩膜版领域,尤其涉及一种可修改的光掩模版标识及其制作方法。The present application relates to the field of photomask plates, in particular to a modifiable photomask plate mark and a manufacturing method thereof.
背景技术Background technique
光刻工艺是集成电路制造工艺中不可或缺的重要技术。光刻工艺通常包括步骤:先在晶圆表面涂布光刻胶等感光材料,在光刻胶材料干燥后,通过曝光机将光掩模版上的掩模图形以特定光源曝在所述的光刻胶感光材料上,随后,再以显影剂将光刻胶感光材料显影,在晶圆表面形成光刻胶图形,所述光刻胶图形在后续进行离子注入工艺或刻蚀工艺时作为掩膜图形。Photolithography is an indispensable and important technology in the integrated circuit manufacturing process. The photolithography process generally includes steps: firstly coat photosensitive materials such as photoresist on the surface of the wafer, and after the photoresist material is dried, expose the mask pattern on the photomask plate to the light with a specific light source through an exposure machine. On the photoresist photosensitive material, the photoresist photosensitive material is then developed with a developer to form a photoresist pattern on the wafer surface, and the photoresist pattern is used as a mask during the subsequent ion implantation process or etching process graphics.
现有的光掩膜版一般包括:透明基板;位于所述透明基板的表面上形成若干分立的遮蔽图形(或掩膜图形);位于所述透明基板表面上的环形框架,所述环形框架包围所述遮蔽图形;位于所述环形框架顶部表面的保护膜,所述保护膜和环形框架用于密封所述光掩膜版。Existing photomasks generally include: a transparent substrate; a number of discrete shielding patterns (or mask patterns) are formed on the surface of the transparent substrate; an annular frame is positioned on the surface of the transparent substrate, and the annular frame surrounds The shielding pattern; a protective film on the top surface of the annular frame, the protective film and the annular frame are used to seal the photomask.
现有在光掩模版的制作之前还需要在透明基板的形成日期、批次等标识,现有的标识是直接蚀刻在透明基板上,后续工艺中不可更改,给掩膜版的制作过程中的管理带来诸多不便。Before the production of the photomask, it is necessary to mark the formation date and batch of the transparent substrate. The existing mark is directly etched on the transparent substrate, which cannot be changed in the subsequent process, and it is necessary for the production process of the mask. Management brings many inconveniences.
发明内容Contents of the invention
本申请一些实施例提供了一种光掩模版的标识,包括:Some embodiments of the present application provide an identification of a photomask, including:
透明基板,所述透明基板包括曝光区域和位于曝光区域周围的边缘区域;a transparent substrate comprising an exposed area and an edge area surrounding the exposed area;
所述透明基板的边缘区域中具有多个标识槽,每一个所述标识槽均包括行列排布的多个主凹槽以及将相邻的主凹槽连接的副凹槽,所述副凹槽的宽度小于所述主凹槽的宽度,一个所述标识槽中的某些主凹槽和副凹槽中填充有不透光材料构成一个标识码,多个所述标识槽中对应的多个所述标识码构成一个标识。There are a plurality of identification grooves in the edge region of the transparent substrate, and each of the identification grooves includes a plurality of main grooves arranged in rows and columns and auxiliary grooves connecting adjacent main grooves, the auxiliary grooves The width is smaller than the width of the main groove, and some of the main grooves and auxiliary grooves in one of the identification grooves are filled with opaque materials to form an identification code, and the corresponding multiple of the identification grooves The identification code constitutes an identification.
在一些实施例中,每一个所述标识槽中的多个主凹槽呈3x3,4x4或5x5的行列排布,相邻的主凹槽在行方向上和列方向上均通过一个副凹槽连接。In some embodiments, the multiple main grooves in each of the marking grooves are arranged in rows and columns of 3x3, 4x4 or 5x5, and adjacent main grooves are connected by a secondary groove in the row direction and the column direction .
在一些实施例中,所述副凹槽的宽度为主凹槽宽度的1/3-2/3。In some embodiments, the width of the secondary groove is 1/3-2/3 of the width of the main groove.
在一些实施例中,所述一个标识码为数字0-9中的任意一个,或者字母A-Z中的任意一个。In some embodiments, the one identification code is any one of numbers 0-9, or any one of letters A-Z.
在一些实施例中,一个已有的标识码在去除部分主凹槽和/或副凹槽中的不透光材料后修改为其他的标识码,或者一个已有的标识码在去除全部主凹槽和副凹槽中的不透光材料后再在相应的主凹槽和副凹槽填充不透光材料修改为其他的标识码。In some embodiments, an existing identification code is modified to another identification code after removing part of the opaque material in the main groove and/or the secondary groove, or an existing identification code is modified after removing all the main grooves. The opaque material in the groove and the sub-groove is then filled with the opaque material in the corresponding main groove and the sub-groove to modify it into other identification codes.
在一些实施例中,所述不透光材料为不透光的金属或油墨。In some embodiments, the opaque material is opaque metal or ink.
在一些实施例中,所述标识包括产品批号、序列号、工厂代号、日期、客户代码中的一种或几种。In some embodiments, the identification includes one or more of product batch number, serial number, factory code, date, and customer code.
在一些实施例中,所述标识槽的宽度为6-12mm。In some embodiments, the width of the identification groove is 6-12mm.
在一些实施例中,所述透明基板的曝光区域的表面上具有若干分立的遮蔽图形;所述透明基板曝光区域的边缘表面上具有环绕所述遮蔽图形的环形框架;所述环形框架的顶部表面具有封闭所述环形框架内空间的保护膜。In some embodiments, the surface of the exposed area of the transparent substrate has several discrete masking patterns; the edge surface of the exposed area of the transparent substrate has a ring frame surrounding the masking graph; the top surface of the ring frame There is a protective film closing the space inside the annular frame.
本申请还提供了一种光掩模版的标识的制作方法,包括:The present application also provides a method for making a photomask mark, including:
提供透明基板,所述透明基板包括曝光区域和位于曝光区域周围的边缘区域;providing a transparent substrate comprising an exposed area and an edge area surrounding the exposed area;
在所述透明基板的边缘区域中形成多个标识槽,每一个所述标识槽均包括行列排布的多个主凹槽以及将相邻的主凹槽连接的副凹槽,所述副凹槽的宽度小于所述主凹槽的宽度;A plurality of identification grooves are formed in the edge region of the transparent substrate, each of the identification grooves includes a plurality of main grooves arranged in rows and columns and auxiliary grooves connecting adjacent main grooves, the auxiliary grooves the width of the groove is smaller than the width of the main groove;
在所述标识槽中的某些主凹槽和副凹槽中填充不透光材料,在所述标识槽形成标识码,多个所述标识槽中对应形成的多个所述标识码构成一个标识。Some of the main grooves and minor grooves in the identification grooves are filled with opaque materials, and identification codes are formed in the identification grooves, and a plurality of the identification codes correspondingly formed in a plurality of the identification grooves constitute a logo.
在一些实施例中,所述不透光材料为不透光的金属或油墨。In some embodiments, the opaque material is opaque metal or ink.
在一些实施例中,还包括:在所述透明基板的曝光区域表面上形成若干分立的遮蔽图形。In some embodiments, the method further includes: forming several discrete masking patterns on the surface of the exposure region of the transparent substrate.
在一些实施例中,所述遮蔽图形和标识码的形成过程包括:在所述透明基板的边缘区域和曝光区域表面上形成不透光的金属层;在所述不透光的金属层上形成图形化的掩膜层,所述图形化的掩膜层暴露出所述不透光的金属层需要被去除的区域;以所述图形化的掩膜层为掩膜,刻蚀去除所述暴露的不透光的金属层,在所述透明基板的曝光区域表面上形成若干分立的遮蔽图形,在所述边缘区域的标识槽中的某些主凹槽和副凹槽中填充不透光材料,在所述标识槽形成标识码,多个所述标识槽中对应形成的多个所述标识码构成一个标识。In some embodiments, the forming process of the masking pattern and the identification code includes: forming an opaque metal layer on the edge area of the transparent substrate and the surface of the exposed area; forming an opaque metal layer on the opaque metal layer A patterned mask layer, the patterned mask layer exposes the region where the opaque metal layer needs to be removed; using the patterned mask layer as a mask, etching removes the exposed area An opaque metal layer, forming several discrete shielding patterns on the surface of the exposure area of the transparent substrate, and filling some of the main grooves and sub-grooves in the marking grooves in the edge area with opaque material An identification code is formed in the identification groove, and a plurality of identification codes correspondingly formed in the plurality of identification grooves constitute an identification.
在一些实施例中,所述不透光材料为油墨时,通过点涂工艺在所述标识槽中的某些主凹槽和副凹槽中填充不透光材料。In some embodiments, when the opaque material is ink, the opaque material is filled in some main grooves and sub-grooves in the marking groove through a dispensing process.
在一些实施例中,所述一个标识码为数字0-9中的任意一个,或者字母A-Z中的任意一个。In some embodiments, the one identification code is any one of numbers 0-9, or any one of letters A-Z.
在一些实施例中,通过去除一个已有的标识码中部分主凹槽和/或副凹槽中的不透光材料后将所述已有的标识码修改为其他的标识码,或者通过去除一个已形成的标识码中全部主凹槽和副凹槽中的不透光材料后,再在相应的主凹槽和副凹槽填充不透光材料将所述已有的标识码修改为其他的标识码。In some embodiments, the existing identification code is modified to other identification codes by removing the opaque material in some main grooves and/or minor grooves in an existing identification code, or by removing After the opaque material in all the main grooves and sub-grooves in a formed identification code, fill the opaque material in the corresponding main grooves and sub-grooves to modify the existing identification code to other the identification code for .
在一些实施例中,每一个所述标识槽中的多个主凹槽呈3x3,4x4或5x5的行列排布,相邻的主凹槽在行方向上和列方向上均通过一个副凹槽连接。In some embodiments, the multiple main grooves in each of the marking grooves are arranged in rows and columns of 3x3, 4x4 or 5x5, and adjacent main grooves are connected by a secondary groove in the row direction and the column direction .
在一些实施例中,所述副凹槽的宽度为主凹槽宽度的1/3-2/3,所述标识槽的宽度为6-12mm。In some embodiments, the width of the secondary groove is 1/3-2/3 of the width of the main groove, and the width of the identification groove is 6-12mm.
在一些实施例中,还包括:位于所述透明基板曝光区域的边缘表面上的环绕所述遮蔽图形的环形框架;位于所述环形框架的顶部表面封闭所述环形框架内空间的保护膜。In some embodiments, it also includes: a ring frame surrounding the masking pattern located on the edge surface of the exposure area of the transparent substrate; a protective film located on the top surface of the ring frame to close the space in the ring frame.
本申请前述一些实施例中的光掩模版的标识,包括:透明基板,所述透明基板包括曝光区域和位于曝光区域周围的边缘区域;所述透明基板的边缘区域中具有多个标识槽,每一个所述标识槽均包括行列排布的多个主凹槽以及将相邻的主凹槽连接的副凹槽,所述副凹槽的宽度小于所述主凹槽的宽度,一个所述标识槽中的某些主凹槽和副凹槽中填充有不透光材料构成一个标识码,多个所述标识槽中对应的多个所述标识码构成一个标识。本申请的已有标识码后续可以移除部分不透光材料以改变为其他标识码,或者可以将不透光材料去除后重新在相应的主凹槽和副凹槽中填充不透光材料以变成其他的标识码,可以很简便的实现对标识的修改,以满足掩膜板制作过程中的管理需求。并且,前述特定结构的标识槽一方面可以方便不透光材料填充后形成的标识码的识别,另一方面,一个前述特定结构的标识槽中通过对主凹槽和副凹槽不同的填充方式可以形成不同的数字(0-9)或不同的字母(A-Z),以满足不同的标识的需求。The marking of the photomask in some of the foregoing embodiments of the present application includes: a transparent substrate, the transparent substrate includes an exposure area and an edge area around the exposure area; there are a plurality of identification grooves in the edge area of the transparent substrate, each Each of the identification grooves includes a plurality of main grooves arranged in rows and columns and auxiliary grooves connecting adjacent main grooves, the width of the auxiliary grooves is smaller than the width of the main grooves, and one of the identification grooves Some of the main grooves and auxiliary grooves in the grooves are filled with opaque material to form an identification code, and the corresponding multiple identification codes in the plurality of identification grooves form an identification. The existing identification code of the present application can subsequently remove part of the opaque material to change into another identification code, or the opaque material can be refilled in the corresponding main groove and sub-groove after the opaque material is removed. It can be changed into other identification codes, and the modification of the identification can be easily implemented to meet the management requirements in the mask manufacturing process. Moreover, the identification groove of the above-mentioned specific structure can facilitate the identification of the identification code formed after filling the opaque material on the one hand; Different numbers (0-9) or different letters (A-Z) can be formed to meet different identification requirements.
附图说明Description of drawings
图1-图8,图11为本申请一些实施例中光掩膜版标识制作过程的结构示意图;Fig. 1-Fig. 8, Fig. 11 are the schematic structural diagrams of the photomask mark making process in some embodiments of the present application;
图9为本申请一些实施例中数字0-9的标识码图;Fig. 9 is an identification code diagram of numbers 0-9 in some embodiments of the present application;
图10为本申请一些实施例中字母A-Z的标识码图。Fig. 10 is a diagram of the identification codes of letters A-Z in some embodiments of the present application.
具体实施方式Detailed ways
下面结合附图对本申请的具体实施方式做详细的说明。在详述本申请实施例时,为便于说明,示意图会不依一般比例作局部放大,而且所述示意图只是示例,其在此不应限制本申请的保护范围。此外,在实际制作中应包含长度、宽度及深度的三维空间尺寸。The specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. When describing the embodiments of the present application in detail, for the convenience of explanation, the schematic diagrams will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the protection scope of the present application. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.
本申请一些实施例首先提供了一种光掩膜版标识的制作方法,下面结合附图对光掩膜版制作过程进行详细的描述。Some embodiments of the present application firstly provide a method for manufacturing a photomask mark, and the photomask manufacturing process will be described in detail below with reference to the accompanying drawings.
参考图1和图2,其中图2为图1沿切割线AB方向的剖面结构示意图,提供透明基板201,所述透明基板201包括曝光区域21和位于曝光区域21周围的边缘区域22。Referring to FIGS. 1 and 2 , where FIG. 2 is a schematic cross-sectional view of FIG. 1 along the cutting line AB, a
所述透明基板201作为光掩模版的载体,所述透明基板201的材质为透光的材质,所述透明基板201的透光率大于90%。在一些实施例中所述透明基板201的材料可以为石英玻璃或苏打玻璃。在其他一些实施例中,所述透明基板201的材料还可以为熔融硅石(fusedsilica)、氟化钙、氮化硅、氧化钛合金、蓝宝石。The
在一些实施例中,所述透明基板201包括曝光区域21和位于曝光区域21周围的边缘区域22,所述曝光区域21可以呈方形或圆形或其他合适的形状,所述边缘区域22呈环形,环绕所述曝光区域21。所述曝光区域21表面上用于形成遮蔽图形(或遮光图形)202,所述曝光区域21表面上还可以用于形成相移层,所述曝光区域21四周边缘表面上后续用于形成环形框架,所述透明基板201的边缘区域22用于形成可修改的标识。In some embodiments, the
所述标识用于对制作的光掩模版进行标记,以作为制作的不同的光掩模版的身份信息或区分信息。在一些实施例中,所述标识可以包括产品批号、序列号、工厂代号、日期、客户代码中的一种或几种,例如有些标识中可以包括序列号、工厂代号和日期,有些标识中可以包括批号、工厂代号和日期,有些标识中可以包括批号、工厂代号、日期和客户代码。The identification is used to mark the produced photomask as identity information or distinguishing information of different produced photomasks. In some embodiments, the identification may include one or more of product batch number, serial number, factory code, date, and customer code. For example, some identifications may include serial number, factory code and date, and some identifications may include Including batch number, factory code and date, some marks can include batch number, factory code, date and customer code.
所述标识由多个标识码组成,一个所述标识码可以为一个数字或一个字母。所述数字为0-9(0、1、2、3、4、5、6、7、8、9)中的任意一个,所述字母为A-Z(A、B、C、D、E、F、G、H、I、J、K、L、M、N、O、P、Q、R、S、T、U、V、W、X、Y、Z)中的任意一个。在一些实施例中,所述标识可以由多个数字组成,或者多个字母组成,或者多个数字和字母的组合组成。The identification is composed of multiple identification codes, and one identification code can be a number or a letter. The number is any one of 0-9 (0, 1, 2, 3, 4, 5, 6, 7, 8, 9), and the letter is A-Z (A, B, C, D, E, F , G, H, I, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z). In some embodiments, the identification may consist of multiple numbers, or multiple letters, or a combination of multiple numbers and letters.
参考图3-图5,其中图4为图3沿切割线AB方向的剖面结构示意图,图5为图3沿切割线CD方向的剖面结构示意图,在所述透明基板201的边缘区域22中形成多个标识槽210,每一个所述标识槽210均包括行列排布的多个主凹槽211以及将相邻的主凹槽211连接的副凹槽212,所述副凹槽212的宽度W1小于所述主凹槽211的宽度W2。Referring to FIGS. 3-5 , in which FIG. 4 is a schematic cross-sectional structure diagram of FIG. 3 along the cutting line AB, and FIG. 5 is a schematic cross-sectional structure diagram of FIG. 3 along the cutting line CD direction. A plurality of
一个所述标识槽210中后续填充不透光材料以形成一个标识码,多个标识槽210中相应的填充不透光材料后形成多个标识码。One
每一个所述标识槽210均包括行列排布的多个主凹槽211以及将相邻的主凹槽211连接的副凹槽212,所述副凹槽212的宽度W1小于所述主凹槽211的宽度W2,一方面前述特定结构的标识槽210可以方便不透光材料填充后形成的标识码的识别,另一方面,一个前述特定结构的标识槽210中通过对主凹槽211和副凹槽212不同的填充方式可以形成不同的数字(0-9)或不同的字母(A-Z),以满足不同的标识的需求。Each of the
在一些实施例中,所述副凹槽212的宽度W1为主凹槽211宽度W2的1/3-2/3。In some embodiments, the width W1 of the
在一些实施例中,所述主凹槽211的深度和所述副凹槽212的深度相同。在其他一些实施例中,所述主凹槽211的深度和所述副凹槽212的深度可以不同,具体的所述主凹槽211的深度可以大于或小于所述副凹槽212的深度,后续填充不透光金属材料后,使得主凹槽211中不透光金属材料的表面高度与所述副凹槽212不透光金属材料的表面高度不同,使得形成的标识码更具立体感,便于标识码的识别。In some embodiments, the depth of the
在一些实施例中,每一个所述标识槽210中的多个主凹槽211呈3x3,4x4或5x5的行列排布,相邻的主凹槽211在行方向上和列方向上均通过一个副凹槽212连接。本实施例中,每一个所述标识槽210中的9个所述主凹槽211呈3x3,的行列排布,相邻的主凹槽211在行方向上和列方向上均通过一个副凹槽212连接,即一共需要10个副凹槽212将所述9个所述主凹槽211在行方向上和列方向上连接。In some embodiments, the plurality of
在一些实施例中,所述标识槽210的宽度为6-12mm。所述标识槽210的宽度为标识槽210沿横向方向(行方向或平行于切割线CD的方向)上最外侧的两个主凹槽211之间的两外侧距离。In some embodiments, the width of the
在一些实施例中,所述标识槽210的形成过程为:在所述透明基板201的表面上形成图形化的掩膜层(图中未示出),所述图形化的掩膜层中具有暴露出所述透明基板201边缘区域表面的多个掩膜开口,一个所述掩膜开口包括行列排布的多个主第一开口以及将相邻的第一开口连接的第二开口,所述第二开口的宽度小于所述第一开口的宽度,所述第一开口的位置与主凹槽的位置对应,所述第二开口的位置与所述副凹槽的位置对应;以所述图形化的掩膜层为掩膜,沿所述掩膜开口刻蚀所述透明基板201,在透明基板201的边缘区域中形成多个标识槽210,每一个所述标识槽210均包括行列排布的多个主凹槽211以及将相邻的主凹槽211连接的副凹槽212,所述副凹槽212的宽度W1小于所述主凹槽211的宽度W2。本实施中,以所述边缘区域22中形成四个标识槽210作为示例进行说明。在其他实施例中,所述边缘区域22中可以形成其他数量的标识槽。In some embodiments, the formation process of the
参考图6-图8,其中图7为图6沿切割线AB方向的剖面结构示意图,图8为图6沿切割线CD方向的剖面结构示意图,在所述标识槽210中的某些主凹槽211和副凹槽212中填充不透光材料,在所述标识槽210形成标识码213,多个所述标识槽210中对应形成的多个所述标识码213构成一个标识。Referring to Fig. 6-Fig. 8, Fig. 7 is a schematic cross-sectional structural diagram of Fig. 6 along the cutting line AB, and Fig. 8 is a schematic cross-sectional structural diagram of Fig. 6 along the cutting line CD direction, some main recesses in the
在一个所述标识槽210中的某些(全部或部分)主凹槽211和副凹槽212中填充不透光材料,就可以在该标识槽210中形成一个标识码213。An
通过在一个标识槽210的主凹槽211和副凹槽212中通过不同的填充组合可以形成不同的标识符213。所述标识码213可以为一个数字或一个字母。所述数字为0-9(0、1、2、3、4、5、6、7、8、9)中的任意一个,具体的,请参考图9,图9中从左到右从上到下分别为标识槽中填充不透光材料后的标识码0、1、2、3、4、5、6、7、8、9的结构示意图。所述字母为A-Z(A、B、C、D、E、F、G、H、I、J、K、L、M、N、O、P、Q、R、S、T、U、V、W、X、Y、Z)中的任意一个,具体的请参考图11,具体的,请参考图10,图10中从左到右从上到下分别为标识槽中填充不透光材料后的标识码A、B、C、D、E、F、G、H、I、J、K、L、M、N、O、P、Q、R、S、T、U、V、W、X、Y、Z的结构示意图。即本申请中特定结构的标识槽210通过不同的主凹槽211和副凹槽212的填充组合,既可以形成数字,又可以形成字母,满足标识多样性的需求。本实施例中,所述四个标识槽210中填充不透光材料后形成的标识码为:7CI1。
继续参考图6-图8,在一些实施例中,可以将全部的标识槽210中均进行填充以形成标识码。在其他一些实施例中,可以仅填充部分的标识槽210以形成标识码,在后续工艺中如需修改标识时,比如增加一些新的信息,只需要在剩余的标识槽210中填充不透光材料以形成标识码。Continuing to refer to FIGS. 6-8 , in some embodiments, all the
在一些实施例中,根据工艺的需要修改标识时,本申请可以很简便的对已有的标识码进行修改,以满足工艺的需要。具体的,通过去除一个已有的标识码中部分主凹槽和/或副凹槽中的不透光材料后将所述已有的标识码修改为其他的标识码,比图6中,将第三个字母标识码“I”的两边去除,可以形成数字标识码“1”,或者通过去除一个已形成的标识码中全部主凹槽和副凹槽中的不透光材料后,再在相应的主凹槽和副凹槽填充不透光材料将所述已有的标识码修改为其他的标识码,比如将图6这种一个或多个标识码这种的全部的不透光材料全部去除,然后在相应的主凹槽和副凹槽填充不透光材料将所述已有的标识码修改为其他的标识码。In some embodiments, when the identification is modified according to the needs of the process, the present application can easily modify the existing identification code to meet the needs of the process. Specifically, modify the existing identification code to other identification codes by removing the opaque material in some main grooves and/or sub-grooves in an existing identification code, compared to Figure 6, the The two sides of the third letter identification code "I" can be removed to form a digital identification code "1", or after removing the opaque material in all the main grooves and auxiliary grooves in a formed identification code, Corresponding main grooves and auxiliary grooves are filled with opaque materials to modify the existing identification codes to other identification codes, such as one or more identification codes as shown in Figure 6 with all the opaque materials All are removed, and then the corresponding main grooves and auxiliary grooves are filled with opaque material to modify the existing identification codes to other identification codes.
所述不透光材料为不透光的金属或油墨。在一些实施例中,所述不透光材料与曝光区域21需要形成的遮蔽图形202的材料相同,均为不透光的金属。所述不透光的金属为铬、镍、铝、钌、钼、钛、钽、铜、钨、银、铂中的一种或几种,或者为铬、镍、铝、钌、钼、钛、钽、铜、钨、银、铂、氧化铬、氧化铁、氧化铌、氮化铬、三氧化钼、氮化钼、氧化铬、氮化钛、氮化锆、氧化钛、氮化钽、氧化钽、二氧化硅、氮化铌、氮化硅、氮氧化硅、无定形碳、碳氧化硅、中性氧化铝、氧化铝中的一种或几种。所述遮蔽图形202和标识码213可以为单层或多层堆叠结构(比如两层或两层以上的堆叠结构)The opaque material is opaque metal or ink. In some embodiments, the opaque material is the same material as the
在一些实施例中,所述边缘区域22的标识码213与曝光区域21的遮蔽图形202同步形成,以实现标识码工艺和遮蔽图形工艺的集成,节省成本。在一具体的实施例中,所述边缘区域22的标识码213与曝光区域21的遮蔽图形202的形成过程包括:在所述透明基板201的边缘区域22和曝光区域21表面上形成不透光的金属层(图中未示出);在所述不透光的金属层上形成图形化的掩膜层(图中未示出),所述图形化的掩膜层暴露出所述不透光的金属层需要被去除的区域;以所述图形化的掩膜层为掩膜,刻蚀去除所述暴露的不透光的金属层,在所述透明基板201的曝光区域21表面上形成若干分立的遮蔽图形202,在所述边缘区域22的标识槽210中的某些主凹槽和副凹槽中填充不透光材料,在所述标识槽210形成标识码213,多个所述标识槽210中对应形成的多个所述标识码213构成一个标识。In some embodiments, the
在另一些实施例中,所述不透光材料为油墨时,通过点涂工艺在所述标识槽中的某些主凹槽和副凹槽中填充不透光材料。In other embodiments, when the opaque material is ink, the opaque material is filled in some of the main grooves and sub-grooves in the marking groove through a dispensing process.
在一些实施例中,参考图11,还包括:在所述透明基板201的曝光区域21的边缘表面上形成环绕所述遮蔽图形202的环形框架204;在所述环形框架204的顶部表面形成封闭所述环形框架204内空间的保护膜206。In some embodiments, referring to FIG. 11 , further comprising: forming an
所述环形框架204用于支撑后续形成的保护膜,通过所述环形框架204与和后续形成的保护膜可以将光掩膜版201上的遮蔽图形202和光掩膜版201的中间区域表面与外部环境隔离,防止外部环境的污染。The
所述环形框架204呈中空的环形,所述环形框架204的材料为具有一定机械强度的材料。在一些实施例中,所述环形框架204的材料为铝。在其他一些实施例中,所述环形框架204的材料可以为铝合金、陶瓷、碳钢或其他合适的金属材料或非金属材料。The
在一些实施例中,所述环形框架204通过粘附层203粘附在所述透明基板的边缘区域。In some embodiments, the
所述粘附层203的材料为有机粘合剂,在一些实施例中,所述有机粘合剂为橡胶粘合剂、聚氨酯粘合剂、丙烯酸粘合剂、SEBS(苯乙烯乙烯丁烯苯乙烯)粘合剂、SEPS(苯乙烯乙烯丙烯苯乙烯)粘合剂或硅氧烷粘合剂。The material of the
所述保护膜206的材料为透光材料。The material of the
本申请一些实施例还提供了一种光掩模版标识,参考图6-图8,其中图7为图6沿切割线AB方向的剖面结构示意图,图8为图6沿切割线CD方向的剖面结构示意图,包括:Some embodiments of the present application also provide a photomask mark, referring to FIGS. 6-8 , wherein FIG. 7 is a schematic cross-sectional structural diagram of FIG. 6 along the cutting line AB, and FIG. 8 is a cross-sectional view of FIG. 6 along the cutting line CD. Structure diagram, including:
透明基板201,所述透明基板201包括曝光区域21和位于曝光区域21周围的边缘区域22;A
所述透明基板201的边缘区域22中具有多个标识槽210,每一个所述标识槽210均包括行列排布的多个主凹槽211以及将相邻的主凹槽211连接的副凹槽212,所述副凹槽212的宽度小于所述主凹槽211的宽度,一个所述标识槽210中的某些主凹槽211和副凹槽212中填充有不透光材料构成一个标识码213,多个所述标识槽210中对应的多个所述标识码213构成一个标识。There are a plurality of marking
在一些实施例中,每一个所述标识槽210中的多个主凹槽211呈3x3,4x4或5x5的行列排布,相邻的主凹槽211在行方向上和列方向上均通过一个副凹槽212连接。In some embodiments, the plurality of
在一些实施例中,所述副凹槽212的宽度W1为主凹槽211宽度W2的1/3-2/3。In some embodiments, the width W1 of the
在一些实施例中,参考图9,所述一个标识码为数字0-9中的任意一个。在一些实施例中,参考图10,所述一个标识码为字母A-Z中的任意一个。In some embodiments, referring to FIG. 9 , the one identification code is any one of numbers 0-9. In some embodiments, referring to FIG. 10 , the one identification code is any one of letters A-Z.
在一些实施例中,一个已有的标识码在去除部分主凹槽和/或副凹槽中的不透光材料后修改为其他的标识码,或者一个已有的标识码在去除全部主凹槽和副凹槽中的不透光材料后再在相应的主凹槽和副凹槽填充不透光材料修改为其他的标识码。In some embodiments, an existing identification code is modified to another identification code after removing part of the opaque material in the main groove and/or the secondary groove, or an existing identification code is modified after removing all the main grooves. The opaque material in the groove and the sub-groove is then filled with the opaque material in the corresponding main groove and the sub-groove to modify it into other identification codes.
在一些实施例中,所述不透光材料为不透光的金属或油墨。In some embodiments, the opaque material is opaque metal or ink.
在一些实施例中,所述标识包括产品批号、序列号、工厂代号、日期、客户代码中的一种或几种。In some embodiments, the identification includes one or more of product batch number, serial number, factory code, date, and customer code.
在一些实施例中,所述标识槽210的宽度为6-12mm。In some embodiments, the width of the
在一些实施例中,参考图11,还包括:位于所述透明基板201的曝光区域21的表面上的若干分立的遮蔽图形202;位于所述透明基板201曝光区域21的边缘表面上的环绕所述遮蔽图形202的环形框架204;位于所述环形框架204的顶部表面封闭所述环形框架204内空间的保护膜206。In some embodiments, referring to FIG. 11 , it further includes: several
需要说明的是,本申请光掩膜版的一些实施例中与前述光掩膜版形成方法的一些实施例中相同或相似部分的限定或描述在此不再赘述,具体请参考前述光掩膜版形成方法的一些实施例中相应部分的限定或描述。It should be noted that the definitions or descriptions of the same or similar parts in some embodiments of the photomask of the present application as in some embodiments of the aforementioned photomask forming method will not be repeated here. For details, please refer to the aforementioned photomask Definitions or descriptions of corresponding parts in some embodiments of the plate forming method.
本申请虽然已以较佳实施例公开如上,但其并不是用来限定本申请,任何本领域技术人员在不脱离本申请的精神和范围内,都可以利用上述揭示的方法和技术内容对本申请技术方案做出可能的变动和修改,因此,凡是未脱离本申请技术方案的内容,依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化及修饰,均属于本申请技术方案的保护范围。Although the present application has been disclosed as above with preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can use the methods and technical contents disclosed above to analyze the present application without departing from the spirit and scope of the present application. Possible changes and modifications are made in the technical solution. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the application without departing from the content of the technical solution of the application belong to the technical solution of the application. protected range.
Claims (19)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211500061.5A CN116088262A (en) | 2022-11-28 | 2022-11-28 | Photomask mark and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211500061.5A CN116088262A (en) | 2022-11-28 | 2022-11-28 | Photomask mark and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116088262A true CN116088262A (en) | 2023-05-09 |
Family
ID=86199942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211500061.5A Pending CN116088262A (en) | 2022-11-28 | 2022-11-28 | Photomask mark and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116088262A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037671A (en) * | 1998-11-03 | 2000-03-14 | Advanced Micro Devices, Inc. | Stepper alignment mark structure for maintaining alignment integrity |
| DE10259322A1 (en) * | 2002-12-18 | 2004-07-15 | Infineon Technologies Ag | Making alignment mark in opaque layer on substrate, forms trenches of differing depth, fills selectively, then adds and polishes further layers to leave defined opaque mark |
| TW201327763A (en) * | 2011-12-21 | 2013-07-01 | United Microelectronics Corp | Non-overlay mask pattern on scribe lane region, method of forming the same, and method of avoiding contamination in semiconductor process |
-
2022
- 2022-11-28 CN CN202211500061.5A patent/CN116088262A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037671A (en) * | 1998-11-03 | 2000-03-14 | Advanced Micro Devices, Inc. | Stepper alignment mark structure for maintaining alignment integrity |
| DE10259322A1 (en) * | 2002-12-18 | 2004-07-15 | Infineon Technologies Ag | Making alignment mark in opaque layer on substrate, forms trenches of differing depth, fills selectively, then adds and polishes further layers to leave defined opaque mark |
| TW201327763A (en) * | 2011-12-21 | 2013-07-01 | United Microelectronics Corp | Non-overlay mask pattern on scribe lane region, method of forming the same, and method of avoiding contamination in semiconductor process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9244341B2 (en) | Photomask and method for forming the same | |
| US7803503B2 (en) | Halftone mask and method for making pattern substrate using the halftone mask | |
| KR101443531B1 (en) | Photo mask manufacturing method, photo mask, pattern transfer method and flat pannel display manufacturing method | |
| JP6965557B2 (en) | Imprint template and imprint template manufacturing method | |
| TWI621907B (en) | Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device | |
| JP2014002255A5 (en) | ||
| TW201810096A (en) | Multiple patterning method for integrated circuit components | |
| EP1483628B1 (en) | Full phase shifting mask in damascene process | |
| TW202101114A (en) | Method for die-level unique authentication and serialization of semiconductor devices | |
| US10168612B2 (en) | Photomask blank including a thin chromium hardmask | |
| CN116088262A (en) | Photomask mark and manufacturing method thereof | |
| JP7039993B2 (en) | Photomasks, blanks for imprint molds, and their manufacturing methods | |
| CN108459462B (en) | Photomask, method of manufacturing the same, and method of exposure | |
| US20160377974A1 (en) | Psm blank for enhancing small size cd resolution | |
| CN101105624A (en) | Photomask and exposure method | |
| JP5176641B2 (en) | Halftone phase shift mask and manufacturing method thereof | |
| KR102193506B1 (en) | Photomask, photomask blank, method of manufacturing photomask, and method of manufacturing electronic device | |
| CN115657418B (en) | Photomask and method for making the same | |
| KR20110012893A (en) | Manufacturing method of photo mask | |
| CN114609860A (en) | Mask repair method and mask | |
| CN115639720A (en) | Photomask and manufacturing method thereof | |
| US20220397818A1 (en) | Phase shift mask for euv lithography and manufacturing method for the phase shift mask | |
| CN107045258A (en) | A kind of light shield and the method encoded using the light shield in product surface making date | |
| JP6638493B2 (en) | Method of manufacturing template having multi-stage structure | |
| CN115793383A (en) | Photomask and manufacturing method thereof and defect detection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |