CN116243522A - Touch display panel, preparation method and device thereof, antistatic film and application thereof - Google Patents

Abstract

The present application relates to the field of display technology, in particular to a touch display panel and its preparation method, device, antistatic film and its application. To solve the problem that the resistance specification of the square resistance of the antistatic layer in the related art can only meet the application requirements of small and medium-sized display screens, and is not conducive to the improvement of static dissipation capacity when it is applied to large-size display screens. A touch display panel, comprising: a liquid crystal display panel and an antistatic layer, the liquid crystal display panel comprising an opposing array substrate and an opposing substrate, and a touch sensing layer disposed on a side of the opposing substrate facing the array substrate; The electrostatic layer is arranged on the side of the opposing substrate away from the array substrate; the antistatic layer includes: a first material layer and a second material layer stacked in sequence along a direction gradually away from the opposing substrate; the material of the first material layer includes: silicon oxide and aluminum oxide, the material of the second material layer includes: silicon nitride and aluminum nitride.

Description

Touch display panel and its preparation method, device, antistatic film and application thereof

technical field

The present application relates to the field of display technology, in particular to a touch display panel and its preparation method, device, antistatic film and its application.

Background technique

With the continuous development of Thin film transistor liquid crystal display (TFT-LCD) technology, the demand for thinner and lighter liquid crystal displays is becoming more and more intense, which has given birth to the development of In-cell touch technology. Realize the integration of display and touch. In-cell refers to the integration of the touch function into the TFT-LCD display panel. This process is to form an antistatic layer on the opposite substrate of the liquid crystal display panel, so it can save a glass substrate and the bonding process. Therefore, the cost is reduced, and the thickness and weight of the liquid crystal display panel are reduced, lightness and thinness are realized, and the reflectivity can be reduced to a certain extent.

The application of vehicle displays in automotive displays is becoming more and more common, especially the requirements for large-screen displays and multi-screen displays are getting higher and higher. Larger screens also have more stringent requirements on the In-cell conductive anti-interference film layer (that is, anti-static layer). For example, the conductive anti-interference film layer requires the film layer to have a small resistivity, further reduce the square resistance, and improve the static dissipation ability. At the same time, there should be no interference to the touch signal, and the square resistance should not be too high, otherwise it will lead to a decrease in static electricity dissipation.

At present, the square resistance of the anti-static layer of In-cell products is mostly controlled between 5E7 and 1E10. The overall square resistance is relatively high and the resistance value control range is relatively large. In the display screen, the resistance specification of the square resistance can meet the application requirements. However, as the display becomes larger and the electron transmission distance increases, the conductivity of the square resistance of these In-cell products becomes poor, which is not conducive to the static charge. Lead away, which is not conducive to the improvement of static dissipation capacity in In-cell products.

Contents of the invention

Based on this, the present application provides a touch display panel and its preparation method, device, antistatic film and its application, which are used to solve the resistance specification of the square resistance of the antistatic layer in the related art, which can only meet the requirements of small and medium-sized display screens. The application requirements are not conducive to the improvement of static dissipation capacity when it is applied to large-size display screens.

In a first aspect, a touch display panel is provided, including:

A liquid crystal display panel, the liquid crystal display panel comprising an opposing array substrate and an opposing substrate, and a touch sensing layer disposed on a side of the opposing substrate facing the array substrate;

An antistatic layer, disposed on a side of the opposite substrate away from the array substrate;

The antistatic layer includes: a first material layer and a second material layer sequentially stacked along a direction gradually away from the opposite substrate;

The material of the first material layer includes silicon oxide and aluminum oxide, and the material of the second material layer includes silicon nitride and aluminum nitride.

Optionally, in the first material layer, the mass proportion of the silicon element in the total mass of the silicon element and the aluminum element is 83%-93%;

The molecular formula of silicon oxide is SiO ₂ , and the molecular formula of aluminum oxide is Al ₂ O ₃ .

Optionally, the second material layer is prepared by nitriding the surface of the first material layer.

Optionally, the thickness of the first material layer is 80-100 nm, and the thickness of the second material layer is 4-6 nm.

Optionally, the square resistance of the antistatic layer is 1E7˜9.9E7Ω.

Optionally, the transmittance of the touch display panel is greater than or equal to 99%.

In a second aspect, a method for preparing a touch display panel is provided, including:

A liquid crystal display panel is provided, and the liquid crystal display panel includes an opposing array substrate and an opposing substrate, and a touch sensing layer formed on a side of the opposing substrate facing the array substrate;

By sputtering, a first material layer is formed on the side of the opposite substrate away from the array substrate, and the material of the first material layer includes: silicon oxide and aluminum oxide;

Nitriding the surface of the first material layer away from the array substrate, forming a second material layer on the surface of the first material layer away from the array substrate to prepare an antistatic layer, the antistatic layer includes The first material layer and the second material layer, the materials of the second material layer include: silicon nitride and aluminum nitride.

Optionally, the target material used in the sputtering includes: silicon element and aluminum element, and the mass ratio of the silicon element to the total mass of the silicon element and the aluminum element is 83% to 93%;

The vacuum degree of the sputtering is 0.15-0.25 Pa, the reaction gas used in the sputtering is oxygen, the flow rate of the oxygen gas is: 50-80 sccm, and the flow rate of the inert gas used in the sputtering is 100-100 sccm. 140 sccm.

Optionally, the power of the high-frequency pulse power used in the sputtering is 2.6-3KW, the pulse duty ratio is 60-80%, and the pulse frequency is 120-150KHz.

Optionally, the coating temperature during sputtering is 75-85° C., and the coating speed is 0.4-0.6 m/min.

Optionally, performing nitriding treatment on the surface of the first material layer away from the array substrate includes:

The surface of the first material layer away from the array substrate is bombarded with nitrogen plasma, and nitrogen atoms are injected into the surface of the first material layer away from the array substrate.

Optionally, the vacuum degree of the bombardment is 0.1-0.15 Pa, the flow rate of the inert gas used for generating the nitrogen plasma is 90-110 sccm, and the flow rate of the nitrogen gas used for the bombardment is 40-60 sccm.

Optionally, the temperature of the nitriding treatment is 95-110° C., and the radio frequency power used for the nitriding treatment is 1.5-2 KW.

In a third aspect, a touch display device is provided, including:

The touch display panel as described in the first aspect.

In a fourth aspect, an antistatic film is provided, comprising:

basal layer;

An antistatic layer disposed on the base layer, the antistatic layer comprising: a square resistance layer and a protective layer stacked in sequence along a direction gradually away from the base layer;

The material of the square resistance layer includes: silicon oxide and aluminum oxide, and the material of the protective layer includes: silicon nitride and aluminum nitride.

The fifth aspect provides an application of the antistatic film as described in the fourth aspect in the preparation of a touch sensor.

Compared with the prior art, the present application has the following beneficial effects:

By setting the first material layer and the second material layer, the material of the first material layer includes: silicon oxide and aluminum oxide, the material of the second material layer includes: silicon nitride and aluminum nitride, on the one hand, by making the first material The element ratio and thickness of the antistatic layer and the second material layer can be adjusted to control the square resistance of the antistatic layer within a stable range, such as the range of 1E7～9.9E7Ω, rather than a wide range, so When the antistatic layer is applied to a large-size display, not only can the large-size display have good static dissipative capability, but also the large-size display can maintain high touch performance. For example, when the square resistance value of the antistatic layer is below 9.9E7Ω, high-voltage charges can be guided away through the antistatic layer, which can solve the problem in the related art that the square resistance value is too high, which is not conducive to static electricity dissipation. To improve the problem, when the square resistance of the antistatic layer is above 1E7, the problem of poor touch performance caused by too low square resistance in the related art can be reduced. On the other hand, the second material layer has high density and can block water and oxygen, so as to protect the first material layer, thereby improving the performance stability of the antistatic layer in harsh environments, thereby being able to Improve app stability for large displays. The problem that the antistatic layer in the related art cannot meet the application requirements of large-size display screens is solved.

Description of drawings

FIG. 1 is a schematic cross-sectional structure diagram of a touch display panel provided by some embodiments of the present application;

FIG. 2 is a schematic flowchart of a method for manufacturing a touch display panel provided by some embodiments of the present application;

Fig. 3 is a schematic cross-sectional structure diagram of an antistatic film provided by some embodiments of the present application.

Detailed ways

The present application will be described in further detail below in conjunction with specific embodiments. This application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of this application more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Based on the above technical problems, some embodiments of the present application provide a touch display panel 10, as shown in FIG. The array substrate 11 and the opposite substrate 12, and the liquid crystal layer 13 interposed between the array substrate 11 and the opposite substrate 12, and the touch sensing layer 14 disposed on the side of the opposite substrate 12 facing the array substrate 11; The electrostatic layer 2 is disposed on a side of the opposite substrate 12 away from the array substrate 11 .

The antistatic layer 2 includes: a first material layer 21 and a second material layer 22 stacked in sequence along the direction gradually away from the opposite substrate 12; the material of the first material layer 21 includes: silicon oxide and aluminum oxide, and the second material layer 22 materials include: silicon nitride and aluminum nitride.

Among them, silicon oxide has the characteristics of high temperature resistance and small thermal expansion coefficient.

Alumina is a high hardness compound that ionizes at high temperatures.

Silicon nitride is an important structural ceramic material with high hardness, lubricity and wear resistance. It is an atomic crystal and can resist oxidation at high temperatures.

Aluminum nitride is a covalently bonded substance that is very stable in an inert high temperature environment.

In the touch display panel provided in the embodiment of the present application, by setting the first material layer 21 and the second material layer 22, the material of the first material layer 21 includes: silicon oxide and aluminum oxide, and the material of the second material layer 22 includes : silicon nitride and aluminum nitride, on the one hand, by adjusting the element ratio and thickness of the first material layer 21 and the second material layer 22, etc., the square resistance of the antistatic layer 2 can be controlled in a stable range Within, such as the range of 1E7 ~ 9.9E7Ω, rather than a wide range, so that not only when the antistatic layer 2 is applied to a large-size display, the large-size display can maintain good static dissipation capacity , and can also maintain the high touch performance of the large-size display screen. For example, when the square resistance value of the antistatic layer is below 9.9E7Ω, high-voltage charges can be guided away through the antistatic layer, which can solve the problem in the related art that the square resistance value is too high, which is not conducive to static electricity dissipation. To improve the problem, when the square resistance of the antistatic layer is above 1E7, the problem of poor touch performance caused by too low square resistance in the related art can be reduced. On the other hand, the second material layer 22 has high density and can block water and oxygen, so as to protect the first material layer 21, thereby improving the performance stability of the antistatic layer in harsh environments. Thereby, the application stability of the large-size display screen can be improved. The problem that the antistatic layer in the related art cannot meet the application requirements of large-size display screens is solved.

Wherein, both the above-mentioned first material layer 21 and the second material layer 22 can be formed by sputtering. For example, the first material layer 21 and the second material layer 22 may be respectively sputtered and coated by using corresponding targets.

In some embodiments, the second material layer 22 is prepared by nitriding the surface of the first material layer 21 .

In these embodiments, the second material layer 22 can be formed on the surface of the first material layer 21 away from the array substrate by nitriding the surface of the first material layer 21 by implanting nitrogen atoms, and the preparation is simple and convenient. .

Wherein, the mass ratio of the silicon element and the aluminum element in the first material layer 21 is not specifically limited, as long as the above square resistance requirement can be met.

In some embodiments, in the first material layer 21, the mass proportion of silicon element in the total mass of silicon element and aluminum element is 83%-93%; the molecular formula of silicon oxide is SiO ₂ , and the molecular formula of aluminum oxide is Al ₂ O ₃ .

In these embodiments, by controlling the mass proportion of silicon element in the total mass of silicon element and aluminum element to be 83% to 93% within the above range, and controlling the molecular formula of silicon oxide to be SiO ₂ , the molecular formula of aluminum oxide is Al ₂ O ₃ , can better control the square resistance of the first material layer 21, such as controlling the square resistance of the antistatic layer in the range of 1E7～9.9E7Ω, so that the antistatic layer can be used for large-scale In the display screen, it meets the application requirements of large-size display screens for anti-static performance and touch performance. At the same time, by controlling the mass ratio of the silicon element, oxygen element and aluminum element in the above range, the first material layer 21 can maintain a high transmittance and a high refractive index without greatly affecting the display.

In some embodiments, the transmittance of the touch display panel is greater than or equal to 99%.

In these embodiments, by controlling the transmittance of the touch display panel to be greater than 99%, the light transmittance of the touch display panel 10 will not be greatly affected, and thus the display will not be greatly affected.

Wherein, the thicknesses of the first material layer 21 and the second material layer 22 are not specifically limited, and in practical applications, they can be reasonably set according to actual needs, so that the first material layer 21 and the second material layer 22 can Reach the technical effect that the present application can achieve.

In some embodiments, the thickness of the first material layer 21 is 80-100 nm, and the thickness of the second material layer 22 is 4-6 nm.

In these embodiments, it has been found through experiments that by controlling the thicknesses of the first material layer 21 and the second material layer 22 within the above-mentioned range, the square resistance of the first material layer 21 can be kept to the greatest extent, such as being kept at In the range of 1E7～9.9E7Ω, at the same time, through the second material layer 22 of the above thickness, the first material layer 21 can be protected, and the square resistance change phenomenon of the first material layer 21 in a harsh environment can be reduced, so that Improve the stability of the antistatic layer 2, and in addition, by limiting the thickness of the second material layer 22 within the above range, it is also possible to take into account the better electron transport performance of the second material layer 22, and avoid conduction to the first material layer 21. sex has a greater impact.

In some embodiments, the square resistance of the antistatic layer 2 is 1E7˜9.9E7Ω.

In these embodiments, by controlling the square resistance of the antistatic layer 2 within the above range, the antistatic and touch control requirements of large-size display screens can be met.

Some embodiments of the present application provide a touch display device, including: the above touch display panel.

An example of the touch display device may be a vehicle display device. Vehicle-mounted display devices are based on their harsh vehicle-mounted environment. When testing the reliability of touch display panels, the test time will be doubled. For example, in the case that the test duration of the traditional touch display panel is 240 hours, the test duration of the vehicle display device is 1000 hours or even longer.

And because the antistatic layer 2 adopted by the vehicle-mounted display device provided by the embodiment of the present application includes a first material layer 21 and a second material layer 22, and the above-mentioned antistatic layer is reliably tested under the conditions of 85° C. and 85% humidity. The performance test found that: the antistatic layer 2 can meet the long-term (1000h) reliability test requirements, has good water and oxygen barrier performance, and solves the problem that the antistatic layer 2 in the related art cannot meet the long-term requirements under high temperature and high humidity conditions. Reliability testing requirements, and the antistatic layer 2 is prone to defects such as touch failure and electrostatic discharge failure during use, which makes the antistatic layer 2 have poor square resistance stability.

Some embodiments of the present application provide a method for manufacturing a touch display panel, as shown in FIG. 2 , including:

S1), providing a liquid crystal display panel 1, the liquid crystal display panel 1 includes an opposing array substrate 11 and an opposing substrate 12, and a touch sensing layer 14 formed on a side of the opposing substrate 12 facing the array substrate 11;

S2), by sputtering, a first material layer 21 is formed on the side of the opposite substrate 12 facing away from the array substrate 11, and the material of the first material layer 21 includes: silicon oxide and aluminum oxide;

S3), nitriding the surface of the first material layer 21 away from the array substrate 11, forming the second material layer 22 on the surface of the first material layer 21 away from the array substrate 11, and preparing the antistatic layer 2, the antistatic layer 2 It includes a first material layer 21 and a second material layer 22, and the material of the second material layer 22 includes: silicon nitride and aluminum nitride.

In some embodiments, the target material used in the above-mentioned sputtering includes: silicon element and aluminum element, the mass proportion of silicon element in the total mass of silicon element and aluminum element is 83% to 93%; the vacuum degree of sputtering is 0.15-0.25 Pa, the reaction gas used in sputtering is oxygen, the flow rate of oxygen is 50-80 sccm, and the flow rate of inert gas used in sputtering is 100-140 sccm.

Among them, the mass proportion of silicon element in the total mass of silicon element and aluminum element is 83%-93%, and the mass proportion of aluminum element in the total mass of silicon element and aluminum element is 7%-17%.

In these embodiments, an inert gas is used as a working gas to generate plasma, and the plasma sputters the target material to coat the opposing substrate 12. For example, the inert gas may be argon, and oxygen may be The reaction gas of the film layer can adjust the degree of chemical reaction between oxygen and the target material by adjusting the flow rate of oxygen, so that the level of resistance can be adjusted.

In some embodiments, the mass proportion of the silicon element in the total mass of the silicon element and the aluminum element is 87%-89%.

At this time, the mass ratio of the aluminum element to the total mass of the silicon element and the aluminum element is 11% to 13%, that is, in the target material, the mass ratio of the silicon element to the aluminum element can be 87:13, 88: 12 or 89:11.

In some embodiments, the radio frequency power used in the sputtering process is 2.6-3KW, the pulse duty ratio is 60-80%, and the pulse frequency is 120-150KHz.

In these embodiments, the thickness of the first material layer 21 and the ionization rate of the material can be adjusted by controlling the power of the high-frequency power supply within the above-mentioned range and controlling the pulse duty ratio of the radio-frequency within the above-mentioned range, so that By changing the resistivity and square resistance of the first material layer 21 , the square resistance of the antistatic layer 2 is finally within the range of 1E7˜9.9E7Ω.

In some embodiments, the coating temperature during sputtering is 75-85° C., and the coating speed is 0.4-0.6 m/min.

In these embodiments, by controlling the coating temperature and speed within the above range, low-temperature coating can be achieved and the quality of the coating can be improved. Under this coating temperature, there is no effect on the array substrate. If the coating temperature is set higher than normal temperature, the number of target particles can be increased. Kinetic energy to enhance the compactness of the first material layer 21 .

Wherein, the specific method of nitriding the surface of the first material layer 21 far away from the array substrate 11 is not limited, as long as the nitriding treatment can be carried out on the surface of the first material layer 21 far away from the array substrate 11, the first material layer 21 The contained materials can be prepared as the second material layer 22 with a certain thickness.

In some embodiments, performing nitriding treatment on the surface of the first material layer 21 away from the array substrate 11 may include:

The surface of the first material layer 21 away from the array substrate 11 is bombarded with nitrogen plasma, and nitrogen atoms are implanted on the surface of the first material layer 21 away from the array substrate. During this process, the nitrogen plasma reacts with the surface of the first material layer 21 away from the array substrate to form silicon nitride and aluminum nitride films.

In these embodiments, the second material layer 22 is prepared by plasma bombardment, and the thickness and density of the second material layer 22 can be adjusted by adjusting the conditions of plasma bombardment, so that And the second material layer 22 with a relatively thin thickness, the preparation method is simple and convenient.

In some embodiments, the vacuum degree of the bombardment is 0.1-0.15 Pa, the flow rate of the inert gas used to generate the nitrogen plasma is 90-110 sccm, and the flow rate of the nitrogen gas used for the bombardment is 40-60 sccm.

In these embodiments, the amount of nitriding reaction can be controlled by controlling the degree of vacuum, the flow rate of nitrogen gas and the flow rate of inert gas, which provides the conditions for plasma injection reaction.

Wherein, the inert gas used to generate the nitrogen plasma may be argon.

In some embodiments, the temperature of the nitriding treatment is 95-110° C., and the radio frequency power used for the nitriding treatment is 1.5-2 KW.

In these embodiments, by controlling the temperature of the nitriding treatment and the radio frequency power within the above range, higher energy can be provided for the plasma injection, so that the performance and preparation time of the second material layer 22 can be optimized, and further can be Prepare the second material layer 22 with higher density, thinner thickness and better water and oxygen barrier function.

Some embodiments of the present application provide an antistatic film, as shown in FIG. 3 , including: a base layer 100 and an antistatic layer 2, the antistatic layer 2 is arranged on the base layer 100, and the antistatic layer 2 includes: A resistive layer 201 and a protective layer 202 are sequentially stacked in a direction away from the base layer 100 ; wherein the resistive layer 201 is made of silicon oxide and aluminum oxide, and the protective layer 202 is made of silicon nitride and aluminum nitride.

Wherein, the base layer 100 can be exemplified by a rigid film (such as glass) or a flexible film (such as PI, etc.).

The square resistance is the square resistance, which refers to the resistance between the sides of a square thin film conductive material. The square resistance has a characteristic, that is, the side-to-side resistance of a square of any size is the same, no matter whether the side length is 1 meter or 0.1 meter, their square resistance is the same, that is, the square resistance is only related to the thickness of the conductive film, etc. Factors, but not the size of the area.

The above-mentioned resistive layer 201 refers to a conductive film having the above-mentioned resistive properties. By selecting the material and thickness of the conductive film, a square resistance layer 201 with a certain square resistance can be prepared.

In the antistatic film provided in the embodiment of the present application, since the material of the square resistance layer 201 includes: silicon oxide and aluminum oxide, it is found through experiments that the material selection of the square resistance layer 201 can control the square resistance of the square resistance layer 201 at one Within a stable range, such as within the range of 1E7～9.9E7Ω, rather than within a wide range, when the square resistance layer 201 located within this range is used for the antistatic layer 2, on the one hand, the antistatic layer 2 can be applied It is suitable for large-size display screens and maintains good electrostatic dissipation capability of the large-size display screens. For example, when the square resistance value of the antistatic layer 2 is below 9.9E7Ω, high-voltage charges can be guided away through the square resistance layer 201 , can solve the problem in the related art that the resistance value of the square resistance layer is too high, which is not conducive to the improvement of the static dissipative ability. On the other hand, when the square resistance value of the antistatic layer 2 is above 1E7, it can reduce the The problem of poor touch performance caused by the low 2-square resistance of the anti-static layer of the large-size display. In summary, the resistance specification of the square resistance of the antistatic layer 2 can be applied to large-size display screens, solving the problem that the resistance specification of the square resistance of the antistatic layer 2 in the related art can only meet small and medium-sized display screens. It is not conducive to the improvement of static electricity dissipation ability when it is applied to large-size display screens.

In addition, in the embodiment of the present application, by setting the protection layer 202, since the material of the protection layer 202 includes: silicon nitride and aluminum nitride, the density of the protection layer 202 is relatively high, and the resistance layer 201 can be Water and oxygen barrier is carried out, so that when the touch display panel is applied to a large-size display screen (such as a vehicle display screen), the square resistance performance of the square resistance layer 201 can be protected, and the resistance of the square resistance layer 201 in the application can be reduced. The square resistance value changes, so that the square resistance stability of the square resistance layer 201 can be improved, and the application stability of the large-size display screen can be further improved.

In some embodiments, the antistatic film 2 may further include a touch sensing layer disposed on a side of the base layer 100 away from the antistatic layer.

In these embodiments, the antistatic film 2 can be used in a touch display panel.

In the subsequent preparation process, since the antistatic layer 2 includes a square resistance layer 201 and a protective layer 202, when the antistatic film is cleaned and baked, due to the water and oxygen barrier performance of the protective layer 202, The resistive layer 201 can be water-oxygen barrier, thereby reducing problems such as touch failure and electrostatic discharge failure caused by changes in the square resistance of the resistive layer 201 .

Some embodiments of the present application provide an application of the above-mentioned antistatic film 2 in manufacturing a touch sensor.

The touch sensor may include the antistatic film, FPC and the like.

The specific implementation manners of the present application have been introduced above. In order to objectively illustrate the technical effects produced by the present application, the following examples and comparative examples will be used for description.

In the following examples and comparative examples, all raw materials can be obtained through commercial purchase, and in order to maintain the reliability of the experiment, the raw materials used in the following examples and comparative examples have the same physical and chemical parameters or undergo the same process. deal with.

Example 1

The preparation method of antistatic film in embodiment 1 is as follows:

Step 1), using a ceramic material with a silicon-aluminum weight ratio of 88%: 12% as a sputtering target, feeding argon gas 120 sccm and oxygen 50 sccm into the first coating cavity, and controlling the vacuum degree of the first coating cavity is 0.15pa. Turn on the RF power supply, the power of the RF power supply is 2.8KW, the pulse duty ratio is 70%, the pulse frequency is 135KHz, the temperature in the first coating chamber is controlled to 80°C, the coating speed is 0.5m/min, and the coating thickness is 80nm until.

Step 2), move the prepared square resist layer substrate into the second coating cavity, and use RF plasma to passivate the surface of the square resist layer. The vacuum degree of RF plasma bombardment is 0.1Pa, and the power is 1.7KW , the flow rate of argon gas into the second coating cavity is 100 sccm, the flow rate of nitrogen gas is 50 sccm, the temperature in the cavity is 100° C., until the thickness of the coating film is 4 nm.

Example 2

The preparation method of antistatic film in embodiment 2 is basically the same as the preparation method of antistatic film in embodiment 1. The difference is that the silicon-aluminum weight ratio in step 1) in embodiment 2 is 83%: 17%. The flow rate is 100 sccm, the oxygen flow rate is 80 sccm, and the vacuum degree of the first coating chamber is 0.25 Pa. The power of the RF power supply is 2.6KW, the pulse duty ratio is 60%, the pulse frequency is 120KHz, the temperature in the first coating chamber is 75°C, the coating speed is 0.4m/min, and the coating thickness is 90nm. In step 2), the vacuum degree of RF plasma bombardment is 0.15Pa, the power is 2KW, the flow rate of argon gas into the second coating cavity is 90 sccm, the flow rate of nitrogen gas is 40 sccm, the temperature in the cavity is 95 ° C, and the coating thickness is 5nm.

Example 3

The preparation method of the antistatic film in embodiment 3 is basically the same as the preparation method of the antistatic film in embodiment 1, and the difference is that the silicon-aluminum weight ratio in step 1) in embodiment 3 is 93%:7%. The flow rate is 140 sccm, the oxygen flow rate is 60 sccm, and the vacuum degree of the first coating chamber is 0.2 Pa. The power of the RF power supply is 3.0KW, the pulse duty ratio is 80%, the pulse frequency is 150KHz, the temperature in the first coating chamber is 85°C, the coating speed is 0.6m/min, and the coating thickness is 100nm. In step 2), the vacuum degree of RF plasma bombardment is 0.12Pa, the power is 1.5KW, the flow rate of argon gas into the second coating cavity is 110 sccm, the flow rate of nitrogen gas is 60 sccm, and the temperature in the cavity is 110°C. The thickness is 6nm.

Example 4

The preparation method of the antistatic film in Example 4 is basically the same as that of the antistatic film in Example 1. The difference is that the thickness of the square resistance layer in Example 4 is 70nm, and the thickness of the protective layer is 7nm.

Comparative example 1

The antistatic film in Comparative Example 1 only includes a square resistance layer, and the preparation method of the square resistance layer is basically the same as that of the square resistance layer in Example 1, except that the thickness of the square resistance layer in Comparative Example 1 is 100nm.

test case

The antistatic film prepared in Example 1 and Comparative Example 1 was tested for reliability at 85°C and 85% humidity for 1000h. The reliability under 1000h is tested, and the test results are shown in Table 1 below:

Table 1

It can be seen from Table 1 that by using aluminum oxide and silicon oxide as the square resistance layer, and using silicon nitride and aluminum nitride as the protective layer, when the thickness of the two is appropriate, it can ensure that the antistatic layer has a suitable square resistance. It can be used for large-size display screens. It has good touch performance, strong static dissipation ability, and high reliability under the test conditions of 1000h at 85°C and 85% humidity, and the transmittance of the antistatic layer is also relatively high. High, can reach more than 99%. In comparison example 1, because there is no protective layer to protect the square resistance layer, the reliability is poor under the test conditions of 1000h at 85°C and 85% humidity, and the square resistance of the antistatic layer cannot be kept within a stable range. The thickness of the square resistance layer is relatively thick, and the square resistance tends to decrease. Although the electrostatic dissipation ability is strong, the touch performance is poor, and it is not suitable for large-size displays. In addition, by increasing the thickness of the square resistance layer and the protective layer, the square resistance tends to increase, and the electrostatic dissipation ability is weakened.

In summary, in the case of the material selection of the square resistance layer and the protective layer provided by the application, by adjusting the thickness of the square resistance layer and the protective layer, the antistatic layer can have an appropriate square resistance. When an antistatic layer with proper square resistance is applied to a large-size display, it can maintain the large-size display with good static dissipation performance and high touch performance, and due to the protection of the protective layer in the antistatic layer, The antistatic layer can also maintain a small change in square resistance in harsh environments, thereby maintaining the stability of the square resistance of large-size display screens, thereby improving the application stability of large-size display screens.

The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.

The above-mentioned embodiments only express several implementation modes of the present application, and the description thereof is relatively specific and detailed, but should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of protection of the patent application should be based on the appended claims.

Claims (16)

1. A touch display panel, characterized in that, comprising: A liquid crystal display panel, the liquid crystal display panel comprising an opposing array substrate and an opposing substrate, and a touch sensing layer disposed on a side of the opposing substrate facing the array substrate; An antistatic layer, disposed on a side of the opposite substrate away from the array substrate; The antistatic layer includes: a first material layer and a second material layer sequentially stacked along a direction gradually away from the opposite substrate; The material of the first material layer includes: silicon oxide and aluminum oxide, and the material of the second material layer includes: silicon nitride and aluminum nitride. 2. The touch display panel according to claim 1, characterized in that, In the first material layer, the mass proportion of silicon element in the total mass of silicon element and aluminum element is 83%-93%; The molecular formula of silicon oxide is SiO ₂ , and the molecular formula of aluminum oxide is Al ₂ O ₃ . 3. The touch display panel according to claim 1, characterized in that, The second material layer is prepared by nitriding the surface of the first material layer away from the array substrate. 4. The touch display panel according to claim 1, characterized in that, The thickness of the first material layer is 80-100 nm, and the thickness of the second material layer is 4-6 nm. 5. The touch display panel according to claim 1, characterized in that, The square resistance of the antistatic layer is 1E7˜9.9E7Ω. 6. The touch display panel according to claim 1, characterized in that, The transmittance of the touch display panel is greater than or equal to 99%. 7. A method for preparing a touch display panel, comprising: A liquid crystal display panel is provided, and the liquid crystal display panel includes an opposing array substrate and an opposing substrate, and a touch sensing layer formed on a side of the opposing substrate facing the array substrate; By sputtering, a first material layer is formed on the side of the opposite substrate away from the array substrate, and the material of the first material layer includes: silicon oxide and aluminum oxide; Nitriding the surface of the first material layer away from the array substrate, forming a second material layer on the surface of the first material layer away from the array substrate to prepare an antistatic layer, the antistatic layer includes The first material layer and the second material layer, the materials of the second material layer include: silicon nitride and aluminum nitride. 8. The method of claim 7, wherein, The target material used in the sputtering includes: silicon element and aluminum element, and the mass ratio of the silicon element to the total mass of the silicon element and the aluminum element is 83% to 93%; The vacuum degree of the sputtering is 0.15-0.25 Pa, the reaction gas used in the sputtering is oxygen, the flow rate of the oxygen gas is: 50-80 sccm, and the flow rate of the inert gas used in the sputtering is 100-100 sccm. 140 sccm. 9. The method of claim 7, wherein, The power of the pulse power source used in the sputtering is 2.6-3.0KW, the pulse duty ratio is 60-80%, and the pulse frequency is 120-150KHz. 10. The method of claim 7, wherein, The coating temperature during sputtering is 75-85° C., and the coating speed is 0.4-0.6 m/min. 11. The method according to claim 7, wherein the nitriding treatment on the surface of the first material layer away from the array substrate comprises: The surface of the first material layer away from the array substrate is bombarded with nitrogen plasma, and nitrogen atoms are injected into the surface of the first material layer away from the array substrate. 12. The method of claim 11, wherein, The vacuum degree of the bombardment is 0.1-0.15 Pa, the flow rate of the inert gas used to generate the nitrogen plasma is 90-110 sccm, and the flow rate of the nitrogen gas used in the bombardment is 40-60 sccm. 13. The method of claim 7, wherein, The temperature of the nitriding treatment is 95-110°C, and the radio frequency power used in the nitriding treatment is 1.5-2KW. 14. A touch display device, characterized in that it comprises: The touch display panel according to any one of claims 1-6. 15. An antistatic film, characterized in that, comprising: basal layer; An antistatic layer disposed on the base layer, the antistatic layer comprising: a square resistance layer and a protective layer stacked in sequence along a direction gradually away from the base layer; The material of the square resistance layer includes: silicon oxide and aluminum oxide, and the protective layer is prepared by nitriding the surface of the square resistance layer. 16. An application of the antistatic film as claimed in claim 15 in the preparation of a touch sensor.

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