CN116380797B - Stress measurement device and method - Google Patents
Stress measurement device and methodInfo
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- CN116380797B CN116380797B CN202310406163.9A CN202310406163A CN116380797B CN 116380797 B CN116380797 B CN 116380797B CN 202310406163 A CN202310406163 A CN 202310406163A CN 116380797 B CN116380797 B CN 116380797B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Spectroscopy & Molecular Physics (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a stress measuring device and a method, which relate to the technical field of stress measurement, the scheme designs a reflection and transmission combined optical path based on the photoelastic principle, the reflection optical path can obtain the polarization characteristic of a flexible substrate layer by adopting a phase shift method, and combines the polarization characteristic of the known flexible substrate layer, the transmission light path can adopt a multi-step phase shift fitting method to obtain the polarization characteristics of the inorganic semiconductor layer, and further the full-field positive stress and the shear stress of the flexible substrate layer and the inorganic semiconductor layer are respectively determined through a packaging technology and a stress separation technology, so that a full-field stress distribution image can be displayed in real time.
Description
Technical Field
The invention relates to the technical field of stress measurement, in particular to a stress measurement device and a stress measurement method.
Background
As is well known, the flexible electronic has the characteristics of ductility, light weight, reconfigurable functions and the like, and has wide application prospects in the fields of information, energy, medical treatment, national defense and the like. The service condition of the flexible electronic device is complex, and the flexible electronic device is easy to fail, and in order to solve the contradiction between the rigidity, brittleness and extensible flexibility of the inorganic semiconductor material, stress analysis is needed as the basis of structural design. Therefore, the development of the quantitative characterization technology for stress fields of all layers in the flexible electronic structure can provide theoretical support for optimizing the performance of flexible electronic devices and promote industrial development, but the flexible electronic structure has multiple layers with different performances of all layers, and the stress characterization is difficult to realize.
The existing stress measurement technology comprises a spectrum technology (XRD, micro Raman spectrum and the like) and a light measurement technology (moire method, DIC and the like), and has certain limitations that the XRD and Raman spectrum methods are limited to crystal materials and have low measurement efficiency, and can only measure the superficial stress of the materials, so that quantitative measurement of the internal stress of an inorganic flexible electronic structure is difficult to realize. The various interference, non-interference moire technology, DIC and other methods are based on deformation measurement to indirectly represent stress, and are not applicable to inorganic flexible electronic structures with large morphology change, dominant deformation caused by non-stress factors, small deformation caused by stress, and complex internal structure, stress distribution and state.
In addition, the digital photoelastic method is not only a full-field technology capable of revealing the internal stress of the material, but also has the advantages of non-destructiveness, real-time, strong observability, high resolution and the like, and has wide application prospect in stress analysis of inorganic flexible electronic structures. Compared with other methods, the photoelastic method directly measures the whole-field internal stress by utilizing the stress-optical characteristics of material birefringence, and is suitable for stress analysis of flexible structures. Meanwhile, the infrared digital photoelastic technology makes breakthrough progress in the internal stress analysis of semiconductor devices.
However, the existing measurement means can only realize stress analysis of the inorganic semiconductor material or the flexible substrate material independently, and experimental research on internal stress of the inorganic flexible electronic structure has not been carried out. Meanwhile, aiming at the multilayer heterostructure, the transmission photoelastic method at present only can acquire comprehensive information of the stress of the multilayer structure, and decoupling of single-layer stress cannot be achieved, so that the internal stress level of each layer cannot be finely represented. In summary, there is no good measurement means for stress measurement of inorganic flexible electronic structures.
Disclosure of Invention
The invention aims to provide a stress measuring device and a stress measuring method, which are used for solving the technical problems that the prior transmission-based photoelastic method can only acquire comprehensive information of stress of a multilayer structure, decoupling of single-layer stress cannot be realized, and the internal stress level of each layer cannot be finely represented.
In a first aspect, the present invention provides a stress measurement device, comprising:
The light source assembly can generate a visible light beam and a near infrared light beam, and the visible light beam and the near infrared light beam are coaxial;
The switching device is positioned on the light path of the light source assembly and comprises a depolarizing spectroscope and a reflecting mirror, wherein the switching device is provided with a working position, and one of the depolarizing spectroscope and the reflecting mirror is selectively arranged at the working position;
The first light beam acquisition device is used for detecting light intensity information I R of light beams entering the switching device, and the second light beam acquisition device is used for detecting light intensity information I T of the light beams entering the switching device, and the optical axes of the switching device, the first light beam acquisition device and the second light beam acquisition device are on the same straight line;
The object carrying assembly is positioned between the switching device and the second light beam acquisition device and is used for fixing a sample to be detected, the flexible substrate layer of the fixed sample to be detected is close to the switching device, and the inorganic semiconductor layer of the sample to be detected is close to the second light beam acquisition device;
A data processor respectively connected with the first light beam acquisition device and the second light beam acquisition device;
The stress measuring device is provided with a first working mode and a second working mode;
In the first working mode, the light source assembly generates a visible light beam, and the working position of the switching device is provided with a depolarizing spectroscope, wherein the depolarizing spectroscope reflects the visible light beam generated by the light source assembly to a sample to be detected, and the depolarizing spectroscope transmits the reflected light reflected from the sample to be detected and makes the reflected light enter the first light beam acquisition device, so that light intensity information I R is obtained;
In the second working mode, the light source assembly generates a near infrared light beam, a reflecting mirror is arranged at the working position of the switching device, the reflecting mirror reflects the near infrared light beam generated by the light source assembly to the sample to be tested, and the second light beam collecting device receives the near infrared light beam transmitted from the sample to be tested, so that light intensity information I T is obtained;
The data processor receives and calculates the light intensity information I R and the light intensity information I T, so that stress fields of the flexible substrate layer and the inorganic semiconductor layer of the sample to be detected are obtained.
Further, the light source assembly includes:
A first collimated light source capable of producing a visible light beam;
a second collimated light source capable of producing a near infrared light beam;
The first spectroscope is respectively positioned at two opposite sides of the first spectroscope, and is capable of transmitting the near infrared light beam and reflecting the visible light beam so as to enable the visible light beam and the near infrared light beam to be emitted from the light emitting position of the first spectroscope;
a polarizer for receiving the light emitted from the first beam splitter and shaping the visible light beam and the near infrared light beam into plane polarized light;
The first 1/4 wave plate component is used for shaping light into circularly polarized light, the first 1/4 wave plate component comprises a first fixed frame, a first near infrared light 1/4 wave plate and a first visible light 1/4 wave plate, the first visible light 1/4 wave plate is used for being connected with the first fixed frame and receiving light emitted from the polarizer when the stress measuring device is in a first working mode so as to enable the light source component to generate visible light beams, and the first near infrared light 1/4 wave plate is used for being connected with the first fixed frame and receiving light emitted from the polarizer when the stress measuring device is in a second working mode so as to enable the light source component to generate near infrared light beams.
Further, the first light beam acquisition device comprises a second visible light 1/4 wave plate, a first polarization analyzer and first image acquisition equipment which are sequentially arranged along the light entering direction;
The second light beam acquisition device comprises a second near infrared light 1/4 wave plate, a second polarization analyzer and second image acquisition equipment which are sequentially arranged along the light entering direction.
In a second aspect, the present invention provides a stress measurement method implemented by the stress measurement device, including:
s1, loading a sample to be tested;
placing a sample to be tested on the carrying component to enable the sample to be in a plane stress state;
s2, obtaining polarization information of the flexible substrate layer;
Switching the stress measuring device to a first working mode and starting, and obtaining light intensity information I R by using a first light beam acquisition device;
s3, obtaining polarization information of the inorganic semiconductor layer;
Switching the stress measuring device to a second working mode and starting, and obtaining light intensity information I T by using a second light beam acquisition device;
S4, the data processor calculates the isopiestic line parameter and the isopiestic line parameter of the flexible substrate layer through the light intensity information I R;
S5, the data processor calculates the isopipe parameters and the isopipe parameters of the inorganic semiconductor layer through the light intensity information I T and the isopipe parameters of the flexible substrate layer;
s6, calculating stress fields of the flexible substrate layer and the inorganic semiconductor layer according to the isopipe parameters and the isopipe parameters of the flexible substrate layer and the isopipe parameters of the inorganic semiconductor layer.
Further, the step S2 specifically includes the steps of:
turning on the first collimated light source to generate a visible light beam;
the first visible light 1/4 wave plate is arranged on a first fixing frame;
installing the depolarizing spectroscope in the working position;
The visible light beam sequentially passes through a reflection light path, light intensity information I R of polarized light of the reflection light path under different light field settings is obtained by rotating a polarizer, a first visible light 1/4 wave plate, a second visible light 1/4 wave plate and a first polarization analyzer based on relative settings of a phase shift method, and the light intensity information I R is acquired in a gray scale pattern mode by adopting first image acquisition equipment.
Further, the step S3 specifically includes the steps of:
Turning on the second collimated light source to generate a near infrared light beam;
the first near infrared light 1/4 wave plate is arranged on a first fixing frame;
mounting the mirror in the working position;
The near infrared light beam sequentially passes through a transmission light path, light intensity information I T of polarized light of the transmission light path under different light field settings is obtained by rotating a polarizer, a first near infrared light 1/4 wave plate, a second near infrared light 1/4 wave plate and a second polarization analyzer based on the related settings of a multi-step phase shift fitting method, and the light intensity information I T is acquired in a gray scale pattern mode by adopting second image acquisition equipment.
Further, in the step S4, the data processor determines the isopipe parameters and the isopipe parameters of the flexible substrate layer by using a six-step or ten-step phase shift method, and performs the unwrapping process by using a quality-guided phase unwrapping algorithm.
Further, in the step S5, the data processor determines the isophase line parameter and the isophase line parameter of the inorganic semiconductor layer by using a multi-step phase shift fitting method, and performs the unwrapping process by using a quality-guided phase unwrapping algorithm.
Further, the multi-step phase shift fitting method specifically operates as:
the optical axis angle of at least one of the first near-infrared light 1/4 wave plate, the second polarization analyzer, the second near-infrared light 1/4 wave plate and the polarizer is adjusted for multiple times, so that sequence photoelastic images in space and in situ under different light field combinations are obtained;
extracting gray values of pixel points at the same position in the sequence photoelastic images and corresponding to light field parameters corresponding to the images to form a light intensity sequence at the pixel position;
The optical element comprises an equal-inclination line parameter and an equal-difference line parameter which are calculated based on a Jones matrix and a polarization theory and comprise an unknown inorganic semiconductor layer, an equal-inclination line parameter and an equal-difference line parameter of a known flexible substrate layer, light intensity expressions of all light field parameters and a fitting function, wherein a light intensity sequence obtained through experiments is used as a sampling point, light intensity information of each sampling point is an actual measurement value, a light field parameter is a state parameter of the actual measurement value, the equal-inclination line parameter and the equal-difference line parameter of the flexible substrate layer are used as state parameters, and the equal-inclination line parameter and the equal-difference line parameter of the inorganic semiconductor layer are used as fitting variables, wherein the light field parameter is an optical axis angle of an optical element adjusted in a first near infrared light 1/4 wave plate, a second polarization analyzer, a second near infrared light 1/4 wave plate and a polarizer;
And (3) fitting all pixel points of the sequence photoelastic image point by adopting an iteration means, and finally obtaining the isocline parameters and the isocline parameters of the inorganic semiconductor layer.
Further, in the step S6, after the data processor completes the unwrapping treatment on the isopipe parameter and the isopipe parameter of the inorganic semiconductor layer, the stress-optical law is adopted to determine the principal stress difference and the isopipe distribution field of the flexible substrate layer and the inorganic semiconductor layer, and the shear stress difference method is adopted to obtain full-field positive stress and shear stress distribution images.
Compared with the prior art, the invention has the following advantages and technical effects:
The stress measuring device comprises a light source component, a switching device, a first light beam acquisition device, a second light beam acquisition device, a carrying component and a data processor. The light source component can generate a visible light beam and a near infrared light beam, the visible light beam and the near infrared light beam are coaxial, and the light source component can selectively emit the visible light beam or the near infrared light beam at any time. The switching device comprises a depolarizing spectroscope and a reflecting mirror, wherein the switching device is provided with a working position, and one of the depolarizing spectroscope and the reflecting mirror is selectively arranged at the working position. The first light beam acquisition device is used for detecting light intensity information I R of light beams entering the light beam acquisition device, the second light beam acquisition device is used for detecting light intensity information I T of light beams entering the light beam acquisition device, and optical axes of the switching device, the first light beam acquisition device and the second light beam acquisition device are on the same straight line. The object carrying assembly is used for fixing a sample to be detected, the flexible substrate layer of the fixed sample to be detected is close to the switching device, and the inorganic semiconductor layer of the sample to be detected is close to the second light beam collecting device. The data processor is used for calculating and analyzing the data acquired by the first light beam acquisition device and the second light beam acquisition device. The stress measuring device is provided with a first working mode and a second working mode, in the first working mode, the light source assembly generates a visible light beam, the depolarizing spectroscope is arranged at the working position of the switching device, the depolarizing spectroscope reflects the visible light beam generated by the light source assembly to a sample to be measured, the depolarizing spectroscope transmits the reflected light reflected from the sample to be measured and enables the reflected light to enter the first light beam collecting device, so that light intensity information I R is obtained, in the second working mode, the light source assembly generates a near infrared light beam, the reflecting mirror is arranged at the working position of the switching device, the reflecting mirror reflects the near infrared light beam generated by the light source assembly to the sample to be measured, and the second light beam collecting device receives the near infrared light beam transmitted from the sample to be measured, so that light intensity information I T is obtained. The data processor receives and calculates the light intensity information I R and the light intensity information I T, so that stress fields of the flexible substrate layer and the inorganic semiconductor layer of the sample to be detected are obtained.
In the first working mode and the second working mode, the flexible substrate layer and the inorganic semiconductor layer at the same position of the test sample can be respectively processed by utilizing visible light and near infrared tubes, so that light intensity information I R and light intensity information I T are obtained. The scheme designs a reflection and transmission combined light path based on the photoelastic principle, namely, the reflection light path corresponds to a first working mode and a second working mode, the reflection light path can obtain the polarization characteristic of the flexible substrate layer by adopting a phase shift method, the transmission light path can obtain the polarization characteristic of the inorganic semiconductor layer by adopting a multi-step phase shift fitting method in combination with the polarization characteristic of the known flexible substrate layer, and then the full-field normal stress and the full-field shear stress of the flexible substrate layer and the inorganic semiconductor layer are respectively determined by a packaging technology and a stress separation technology, so that a full-field stress distribution image can be displayed in real time. The visible light beam and the near infrared light beam are coaxial, and the optical axes of the switching device, the first light beam acquisition device and the second light beam acquisition device are on the same straight line, namely, coaxial optical path arrangement is adopted to realize in-situ measurement of a sample to be measured, and the spatial resolution of a stress field depends on the resolution of image acquisition equipment, so that the device and the method for measuring the stress of the inorganic flexible electronic structure based on the photoelastic method can realize full-field, real-time and in-situ high-resolution quantitative characterization of the stress field in each layer of the inorganic flexible electronic structure, and provide a simple, effective and low-cost characterization means for the complex stress state in the structure caused by mismatching of the sizes/moduli/thermal mismatch coefficients of the inorganic semiconductor layer and the flexible substrate layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a stress measurement device according to an embodiment of the present invention in a first operation mode;
FIG. 2 is a schematic diagram of a stress measurement device according to an embodiment of the present invention in a second operation mode;
Fig. 3 is a combination chart of different polarized light fields of partial photoelastic images (a) - (f) in the stress measurement method according to the embodiment of the present invention.
The image sensor comprises a 1-first collimation light source, a 2-second collimation light source, a 3-first spectroscope, a 4-polarizer, a 5-first 1/4 wave plate component, a 6-switching device, a 7-sample to be measured, a 71-flexible substrate layer, a 72-inorganic semiconductor layer, an 8-first light beam acquisition device, a 81-second visible light 1/4 wave plate, a 82-first polarization analyzer, a 83-first image acquisition device, a 9-second light beam acquisition device, a 91-second near infrared light 1/4 wave plate, a 92-second polarization analyzer, a 93-second image acquisition device and a 10-data processor.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediary, or in communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
As shown in figures 1 and 2, the stress measuring device provided by the invention adopts a reflection and transmission combined optical path to realize quantitative characterization of the internal stress field of each layer in full-field, in-situ and real-time.
The specific device comprises:
The light source assembly can generate a visible light beam and a near infrared light beam, the visible light beam and the near infrared light beam are coaxial, and the light source assembly can selectively emit the visible light beam or the near infrared light beam at any time.
The light source assembly is capable of emitting a visible light beam and the near infrared light beam from the same location, but may emit only one of the visible light beam and the near infrared light beam at a time. Specifically, the light source assembly comprises a first collimated light source 1, a second collimated light source 2, a polarizer 4 and a first 1/4 wave plate assembly 5, wherein the first collimated light source 1 can generate a visible light beam, and the second collimated light source 2 can generate a near infrared light beam. The light source assembly further comprises a first spectroscope 3, wherein the first spectroscope 3 can be a dichroic spectroscope, such as a long-wave-pass dichroic spectroscope, and can reflect light with a wavelength lower than a specific value and allow light with a wavelength higher than the specific value to pass through, and the mirror surface of the first spectroscope 3 forms an included angle of 45 degrees with the light beams emitted by the first collimating light source 1 and the second collimating light source 2 respectively, so that the first spectroscope 3 can transmit the near infrared light beam and reflect the visible light beam, and the visible light beam and the near infrared light beam can be emitted from the light emitting position of the first spectroscope 3. The user can selectively turn on the first collimated light source 1 or the second collimated light source 2 to cause the light source assembly to emit a visible light beam and the near infrared light beam.
The polarizer 4 is used for receiving the light emitted from the first beam splitter 3 and shaping the visible light beam and the near infrared light beam into plane polarized light, and the polarizer 4 may be a dual wavelength polarizer or a broadband polarizer. Such as a dual wavelength polarizer, can pass both visible Duan Mou single wavelength light and near infrared band light to form plane polarized light. The shaped light can enter the first 1/4 wave plate assembly 5 to be shaped again into circularly polarized light. In addition, the first 1/4 wave plate component 5 has two working states, which correspond to different light beams respectively. Specifically, the first 1/4 wave plate component 5 includes a first fixing frame, a first near infrared light 1/4 wave plate and a first visible light 1/4 wave plate, where the first visible light 1/4 wave plate is used to connect with the first fixing frame and receive light emitted from the polarizer 4 when the stress measurement device is in a first working mode, so that the light source component generates a visible light beam, and the first near infrared light 1/4 wave plate is used to connect with the first fixing frame and receive light emitted from the polarizer 4 when the stress measurement device is in a second working mode, so that the light source component generates a near infrared light beam.
The apparatus further comprises:
the switching device 6 is positioned on the light path of the light source assembly, the switching device 6 comprises a depolarizing spectroscope and a reflecting mirror, the switching device 6 is provided with a working position, and one of the depolarizing spectroscope and the reflecting mirror is selectively arranged at the working position.
The working position of the switching device 6 is located on the light path of the light source assembly, that is, the light beam generated by the light source assembly passes through the working position, when the depolarizing spectroscope is placed at the working position, the reflecting mirror is not in the whole device, otherwise, when the reflecting mirror is placed at the working position, the depolarizing spectroscope is not in the whole device, and the two are alternatively installed, so that the device can form a reflection light path and a transmission light path. Furthermore, the depolarizing spectroscope and the reflecting mirror in the switching device 6 can be two independent and unconnected components, or can be arranged on a turntable of the same assembly frame, and the depolarizing spectroscope and the reflecting mirror are positioned at the working position by rotating the turntable. The turntable can also be arranged as a sliding disk, and the switching of the depolarizing spectroscope and the reflecting mirror is realized in a sliding manner.
The apparatus further comprises:
The first light beam acquisition device 8 and the second light beam acquisition device 9 are respectively positioned on the left side and the right side of the switching device 6, and the first light beam acquisition device 8 and the second light beam acquisition device 9 are respectively positioned on the left side and the right side of the switching device 6. The first light beam collecting device 8 is used for detecting light intensity information I R of light beams entering the light beam collecting device, the second light beam collecting device 9 is used for detecting light intensity information I T of light beams entering the light beam collecting device, and the optical axes of the switching device 6, the first light beam collecting device 8 and the second light beam collecting device 9 are on the same straight line.
Specifically, the first beam collecting device 8 includes a second visible light 1/4 wave plate 81, a first polarization analyzer 82, and a first image collecting device 83, which are sequentially disposed along the light incident direction. The light intensity information I R of the reflected light path polarized light E R under different light field settings is obtained by rotating the polarizer 4, the first visible light 1/4 wave plate, the second visible light 1/4 wave plate 81 and the main axis direction of the first polarization analyzer 82 based on the phase shift method related settings, and the light intensity information I R is collected in the form of gray scale by adopting the first image collecting device 83. The second light beam collecting device 9 includes a second near infrared light 1/4 wave plate 91, a second polarization analyzer 92, and a second image collecting device 93, which are sequentially disposed along the light incident direction. Based on the related settings of the multi-step phase shift fitting method, the light intensity information I T of the transmitted light path polarized light E T under different light field settings is obtained by rotating the polarizer 4, the first near infrared light 1/4 wave plate, the second near infrared light 1/4 wave plate 91 and the second polarization analyzer 92 in the main axis direction, and the light intensity information I T is acquired in the form of a gray scale by adopting the second image acquisition equipment 93. Because the optical axes of the switching device 6, the first beam acquisition device 8 and the second beam acquisition device 9 are on the same straight line, the acquired aperture information meets the requirement of in-situ performance.
The apparatus further comprises:
And the carrying component is positioned between the switching device 6 and the second light beam acquisition device 9 and is used for fixing the sample 7 to be detected. The carrying component is provided with an X-Y displacement table perpendicular to the optical axis, the flexible substrate layer 71 of the fixed sample 7 to be tested is close to the switching device 6, and the inorganic semiconductor layer 72 of the sample 7 to be tested is close to the second light beam acquisition device 9. The carrier assembly may be a conventional light element fixture.
The apparatus further comprises:
And the data processor 10 is respectively connected with the first light beam acquisition device 8 and the second light beam acquisition device 9 and is used for acquiring and calculating data.
In the first operation mode and the second operation mode, the flexible substrate layer 71 and the inorganic semiconductor layer 72 at the same position of the test sample can be processed by using visible light and near infrared light, respectively, so as to obtain light intensity information I R and light intensity information I T. The reflection and transmission combined optical path is designed based on the photoelastic principle, namely, the first working mode and the second working mode are corresponding, the reflection optical path can obtain the polarization characteristic of the flexible substrate layer 71 by adopting a phase shift method, the transmission optical path can obtain the polarization characteristic of the inorganic semiconductor layer 72 by adopting a multi-step phase shift fitting method in combination with the polarization characteristic of the known flexible substrate layer 71, and then the full-field normal stress and the full-field shear stress of the flexible substrate layer 71 and the inorganic semiconductor layer 72 are respectively determined by a packaging technology and a stress separation technology, so that a full-field stress distribution image can be displayed in real time. The visible light beam and the near infrared light beam are coaxial, and the optical axes of the switching device 6, the first light beam acquisition device 8 and the second light beam acquisition device 9 are on the same straight line, namely, the coaxial optical path arrangement is adopted to realize in-situ measurement of the sample 7 to be measured, and the spatial resolution of the stress field depends on the distribution rate of the image acquisition equipment, so that the device and the method for measuring the stress of the inorganic flexible electronic structure based on the photoelastic method can realize full-field, real-time and in-situ high-resolution quantitative characterization of the stress field in each layer of the inorganic flexible electronic structure, and provide a simple, effective and low-cost characterization means for the complex stress state in the structure caused by the mismatching of the sizes/moduli/thermal mismatch coefficients of the inorganic semiconductor layer 72 and the flexible substrate layer 71.
The stress measuring method provided by the invention comprises the following steps of:
s1, loading a sample 7 to be tested;
And placing the sample 7 to be tested on the carrying component to enable the sample 7 to be tested to be in a plane stress state, wherein the flexible substrate layer 71 of the sample 7 to be tested is close to the switching device 6, and the inorganic semiconductor layer 72 of the sample 7 to be tested is close to the second light beam acquisition device 9.
S2, obtaining polarization information of the flexible substrate layer 71;
The stress measuring device is switched to the first operating mode and started, and the first beam acquisition device 8 is used for obtaining the light intensity information I R.
Specifically, the first collimated light source 1 is turned on to enable the light source assembly to generate a visible light beam, a first visible light 1/4 wave plate is placed on the first fixing frame, and the depolarizing spectroscope is installed at the working position, so that a reflection light path is formed by the device, and the light beam is reflected at an interlayer interface of the flexible substrate layer 71 and the inorganic semiconductor layer 72. The visible light beam sequentially passes through the reflection light path, obtains light intensity information I R of polarized light of the reflection light path under different light field settings in the main axis direction of the rotating polarizer 4, the first visible light 1/4 wave plate, the second visible light 1/4 wave plate 81 and the first polarization analyzer 82 based on the phase shift method related setting, and acquires the light intensity information I R in a gray scale pattern mode by adopting the first image acquisition device 83.
S3, obtaining polarization information of the inorganic semiconductor layer 72;
The stress measuring device is switched to the second operating mode and started, and the second light beam acquisition device 9 is used for obtaining the light intensity information I T.
Specifically, the second collimation light source 2 is turned on to generate near infrared light beams, the first near infrared light 1/4 wave plate is placed on the first fixing frame, the reflecting mirror is arranged at the working position, so that a transmission light path is formed by the device, and the light beams are reflected by the switching device 6 and then sequentially emitted to the second light beam collecting device 9 through the flexible substrate layer 71 and the inorganic semiconductor layer 72. The near infrared light beam sequentially passes through the transmission light path, obtains light intensity information I T of polarized light of the transmission light path under different light field settings by rotating the polarizer 4, the first near infrared light 1/4 wave plate, the second near infrared light 1/4 wave plate 91 and the second polarization analyzer 92 in the main axis direction based on the related settings of the multi-step phase shift fitting method, and acquires the light intensity information I T in a gray scale pattern mode by adopting the second image acquisition equipment 93.
Step s4, the data processor 10 calculates the isopipe parameter and the isopipe parameter of the flexible substrate layer 71 according to the light intensity information I R. Specifically, the data processor 10 determines the isopipe parameters and isopipe parameters of the flexible substrate layer 71 using a six-step or ten-step phase shift method, and performs unwrapping using a mass-guided phase unwrapping algorithm.
Step s5, the data processor 10 calculates the isopipe parameter and the isopipe parameter of the inorganic semiconductor layer 72 according to the light intensity information I T, the isopipe parameter and the isopipe parameter of the flexible substrate layer 71. Specifically, the data processor 10 determines the isopipe parameters and isopipe parameters of the inorganic semiconductor layer 72 using a multi-step phase shift fitting method, and performs a unwrapping process using a mass-guided phase unwrapping algorithm.
Step S6, calculating stress fields of the flexible substrate layer 71 and the inorganic semiconductor layer 72 according to the isopipe parameters and the isopipe parameters of the flexible substrate layer 71 and the inorganic semiconductor layer 72 and the isopipe parameters. Specifically, after the data processor 10 completes the unwrapping process on the isopipe parameters and isopipe parameters of the inorganic semiconductor layer 72, the stress-optical law is adopted to determine the principal stress difference and the isopipe distribution field of the flexible substrate layer 71 and the inorganic semiconductor layer 72, and the shear stress difference method is adopted to obtain full-field normal stress and shear stress distribution images.
Further, the multi-step phase shift fitting method specifically operates as:
For the transmission light path, the optical axis angle of at least one of the first near infrared light 1/4 wave plate, the second polarization analyzer 92, the second near infrared light 1/4 wave plate 91 and the polarizer 4 is adjusted for multiple times, so as to obtain the sequence photoelastic images of the space in situ under different light field combinations. For example, as shown in fig. 3, the optical axis angle ζ of the first near-infrared light 1/4 wave plate is fixed to 45 °, the optical axis angle β of the second polarization analyzer 92 is 0 °, the optical axis angle γ of the second near-infrared light 1/4 wave plate 91 is adjusted to 70 °, the optical axis angle α of the polarizer 4 is continuously adjusted, and the steps of 10 ° from 0 ° to 170 ° are increased, and 18 sets of photoelastic images are acquired.
And extracting gray values of pixel points at the same position in the sequence photoelastic images and corresponding to light field parameters corresponding to the images to form a light intensity sequence at the pixel position.
The optical intensity expressions of all optical field parameters (such as the optical axis angles of the polarizer 4 and the second near-infrared light 1/4 wave plate 91) and the known isopipe parameters and isopipe parameters of the flexible substrate layer 71, the known isopipe parameters and isopipe parameters, and all optical field parameters calculated based on the jones matrix and the polarization theory are used as fitting functions, the experimentally obtained optical intensity sequence is used as a sampling point, the optical intensity information of each sampling point is an actual measurement value, the optical field parameters are state parameters of the actual measurement value, and the phase information is used as a fitting variable.
And (3) fitting all pixel points of the sequence photoelastic image point by adopting an iteration means, and finally obtaining the isocline parameters and the isocline parameters of the inorganic semiconductor layer 72.
The light intensity information of the polarized light is described by jones vector, and the polarization characteristics (the equi-differential line parameter and the equi-tilt line parameter) of the polarizing element and the sample 7 to be measured are described by jones matrix.
The light intensity expression:
where γ is the optical axis angle of the second near-infrared light 1/4 wave plate 91, α is the optical axis angle of the polarizer 4, θ 1 and θ 2 are the isopotential parameters of the inorganic semiconductor layer 72 and the flexible substrate layer 71, respectively, and δ 1 and δ 2 are the isopotential parameters of the inorganic semiconductor layer 72 and the flexible substrate layer 71, respectively.
It should be noted that the above embodiments are merely for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present invention.
Claims (10)
1. A stress measurement device, comprising:
The light source assembly can generate a visible light beam and a near infrared light beam, and the visible light beam and the near infrared light beam are coaxial;
The switching device (6) is positioned on the light path of the light source assembly, and the switching device (6) comprises a depolarizing spectroscope and a reflecting mirror, wherein the switching device (6) is provided with a working position, and one of the depolarizing spectroscope and the reflecting mirror is selectively arranged at the working position;
The light source comprises a switching device (6), a first light beam acquisition device (8) and a second light beam acquisition device (9) which are respectively positioned at two sides of the switching device (6), wherein the first light beam acquisition device (8) is used for detecting light intensity information I R of a light beam which is emitted into the switching device, and the second light beam acquisition device (9) is used for detecting light intensity information I T of the light beam which is emitted into the switching device, and the optical axes of the switching device (6), the first light beam acquisition device (8) and the second light beam acquisition device (9) are on the same straight line;
The object carrying component is positioned between the switching device (6) and the second light beam acquisition device (9) and is used for fixing a sample (7) to be detected, a flexible substrate layer (71) of the fixed sample (7) to be detected is close to the switching device (6), and an inorganic semiconductor layer (72) of the sample (7) to be detected is close to the second light beam acquisition device (9);
A data processor (10) connected to the first beam acquisition device (8) and the second beam acquisition device (9), respectively;
The stress measuring device is provided with a first working mode and a second working mode;
In the first working mode, the light source component generates a visible light beam, a depolarizing spectroscope is arranged at the working position of the switching device (6), the depolarizing spectroscope reflects the visible light beam generated by the light source component to the sample (7) to be detected, and the depolarizing spectroscope transmits the reflected light reflected from the sample (7) to be detected and enables the reflected light to enter the first light beam acquisition device (8), so that light intensity information I R is obtained;
In the second working mode, the light source assembly generates a near infrared light beam, a reflecting mirror is arranged at the working position of the switching device (6), the reflecting mirror reflects the near infrared light beam generated by the light source assembly to the sample (7) to be detected, and the second light beam acquisition device (9) receives the near infrared light beam transmitted from the sample (7) to be detected, so that light intensity information I T is obtained;
The data processor (10) receives and calculates the light intensity information I R and the light intensity information I T, so that stress fields of the flexible substrate layer (71) and the inorganic semiconductor layer (72) of the sample (7) to be detected are obtained.
2. The stress measurement device of claim 1, wherein:
the light source assembly includes:
-a first collimated light source (1), the first collimated light source (1) being capable of producing a visible light beam;
-a second collimated light source (2), said second collimated light source (2) being capable of generating a near infrared light beam;
The first spectroscope (3), the first collimation light source (1) and the second collimation light source (2) are respectively positioned at two opposite sides of the first spectroscope (3), and the first spectroscope (3) can transmit the near infrared light beam and reflect the visible light beam so that the visible light beam and the near infrared light beam are emitted from the light emitting position of the first spectroscope (3);
A polarizer (4) for receiving the light emitted from the first beam splitter (3) and shaping the visible light beam and the near infrared light beam into plane polarized light;
The first 1/4 wave plate component (5) is used for shaping light into circularly polarized light, the first 1/4 wave plate component (5) comprises a first fixed frame, a first near infrared light 1/4 wave plate and a first visible light 1/4 wave plate, the first visible light 1/4 wave plate is used for being connected with the first fixed frame and receiving light emitted from the polarizer (4) when the stress measuring device is in a first working mode so as to enable the light source component to generate visible light beams, and the first near infrared light 1/4 wave plate is used for being connected with the first fixed frame and receiving light emitted from the polarizer (4) when the stress measuring device is in a second working mode so as to enable the light source component to generate the near infrared light beams.
3. The stress measurement device according to claim 2, wherein the first light beam collecting means (8) comprises a second visible light 1/4 wave plate (81), a first analyzer (82) and a first image collecting device (83) arranged in this order in the light entering direction;
The second light beam acquisition device (9) comprises a second near infrared light 1/4 wave plate (91), a second polarization analyzer (92) and a second image acquisition device (93) which are sequentially arranged along the light entering direction.
4. A stress measurement method, implemented by the stress measurement device according to claim 3, comprising:
S1, loading a sample (7) to be tested;
Placing a sample (7) to be tested on the carrying component to enable the sample to be in a plane stress state;
s2, obtaining polarization information of the flexible substrate layer (71);
switching the stress measuring device to a first working mode and starting, and obtaining light intensity information I R by using a first light beam acquisition device (8);
s3, obtaining polarization information of the inorganic semiconductor layer (72);
Switching the stress measuring device to a second working mode and starting, and obtaining light intensity information I T by using a second light beam acquisition device (9);
S4, calculating by the data processor (10) through the light intensity information I R to obtain the isopipe parameters and the isopipe parameters of the flexible substrate layer (71);
S5, the data processor (10) calculates the isocline parameter and the isocline parameter of the inorganic semiconductor layer (72) through the light intensity information I T and the isocline parameter of the flexible substrate layer (71);
S6, calculating stress fields of the flexible substrate layer (71) and the inorganic semiconductor layer (72) according to the isopipe parameters and the isopipe parameters of the flexible substrate layer (71) and the isopipe parameters as well as the isopipe parameters and the isopipe parameters of the inorganic semiconductor layer (72).
5. The method according to claim 4, wherein the step S2 specifically includes the steps of:
Turning on a first collimated light source (1) to generate a visible light beam;
the first visible light 1/4 wave plate is arranged on a first fixing frame;
installing the depolarizing spectroscope in the working position;
The visible light beam sequentially passes through a reflection light path, light intensity information I R of polarized light of the reflection light path under different light field settings is obtained in the main axis direction of a rotary polarizer (4), a first visible light 1/4 wave plate, a second visible light 1/4 wave plate (81) and a first polarization analyzer (82) based on the phase shift method related setting, and the light intensity information I R is acquired in a gray level diagram mode by adopting a first image acquisition device (83).
6. The method according to claim 4, wherein the step S3 specifically includes the steps of:
turning on a second collimated light source (2) to generate a near infrared light beam;
the first near infrared light 1/4 wave plate is arranged on a first fixing frame;
mounting the mirror in the working position;
The near infrared light beam sequentially passes through a transmission light path, light intensity information I T of polarized light of the transmission light path under different light field settings is obtained through rotating a polarizer (4), a first near infrared light 1/4 wave plate, a second near infrared light 1/4 wave plate (91) and a second polarization analyzer (92) based on the related settings of a multi-step phase shift fitting method, and the light intensity information I T is acquired in a gray scale pattern mode by adopting a second image acquisition device (93).
7. The method according to claim 4, wherein in the step S4, the data processor (10) determines the isopipe parameters and the isopipe parameters of the flexible substrate layer (71) by using a six-step or ten-step phase shift method, and performs the unwrapping process by using a mass-guided phase unwrapping algorithm.
8. The method according to claim 4, wherein in the step S5, the data processor (10) determines the isopipes and isopipes of the inorganic semiconductor layer (72) by using a multi-step phase shift fitting method, and performs the unwrapping process by using a mass-guided phase unwrapping algorithm.
9. The method of claim 8, wherein the multi-step phase shift fitting method is specifically operative to:
The optical axis angle of at least one of the first near-infrared light 1/4 wave plate, the second polarization analyzer (92), the second near-infrared light 1/4 wave plate (91) and the polarizer (4) is adjusted for multiple times, so that sequence photoelastic images of the space in situ under different light field combinations are obtained;
extracting gray values of pixel points at the same position in the sequence photoelastic images and corresponding to light field parameters corresponding to the images to form a light intensity sequence at the pixel position;
The optical element comprises an equal inclination line parameter and an equal difference line parameter of an unknown inorganic semiconductor layer (72), an equal inclination line parameter and an equal difference line parameter of a known flexible substrate layer (71), and light intensity expressions of all light field parameters, which are calculated based on a Jones matrix and a polarization theory, and are used as fitting functions, wherein a light intensity sequence obtained through experiments is used as a sampling point, light intensity information of each sampling point is an actual measurement value, light field parameters are state parameters of the actual measurement value, the equal inclination line parameter and the equal difference line parameter of the flexible substrate layer (71) are used as fitting variables, and the equal inclination line parameter and the equal difference line parameter of the inorganic semiconductor layer (72) are used as fitting variables, wherein the light field parameters are optical axis angles of optical elements after adjustment in a first near infrared light 1/4 wave plate, a second near infrared light 1/4 wave plate (91) and a polarizing mirror (4);
And (3) fitting all pixel points of the sequence photoelastic image point by adopting an iteration means, and finally obtaining the isocline parameters and the isocline parameters of the inorganic semiconductor layer (72).
10. The method according to claim 4, wherein in the step S6, the data processor (10) determines the principal stress difference and the equal-inclination distribution field of the flexible substrate layer (71) and the inorganic semiconductor layer (72) respectively by using a stress-optical law after the unwrapping process is completed on the equal-inclination parameters and the equal-difference parameters of the inorganic semiconductor layer (72), and obtains full-field normal stress and shear stress distribution images by a shear stress difference method.
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