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CN116453471A - Channel current control device and method for mini LED backlight source - Google Patents

Channel current control device and method for mini LED backlight source Download PDF

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Publication number
CN116453471A
CN116453471A CN202310391447.5A CN202310391447A CN116453471A CN 116453471 A CN116453471 A CN 116453471A CN 202310391447 A CN202310391447 A CN 202310391447A CN 116453471 A CN116453471 A CN 116453471A
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signal
control
channel
current
mini led
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李萌
刘拓夫
朱力强
周俊
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On Bright Electronics Shanghai Co Ltd
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On Bright Electronics Shanghai Co Ltd
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Priority to CN202310391447.5A priority Critical patent/CN116453471A/en
Priority to TW112124961A priority patent/TWI868773B/en
Publication of CN116453471A publication Critical patent/CN116453471A/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406Control of illumination source
    • G09G3/342Control of illumination source using several illumination sources separately controlled corresponding to different display panel areas, e.g. along one dimension such as lines
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/32Pulse-control circuits
    • H05B45/325Pulse-width modulation [PWM]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/345Current stabilisation; Maintaining constant current
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)

Abstract

The application provides channel current control equipment and a channel current control method for a mini LED backlight source. The channel current control device includes: the control unit is used for providing corresponding reference voltage signals, pulse width modulation signals and digital current setting signals for each mini LED channel in the mini LED backlight source; and for each mini LED channel, the channel current control device comprises: the LED light source comprises a constant current control unit, a high-voltage transistor and a low-voltage transistor, wherein the high-voltage transistor is connected in series between a plurality of LEDs in a mini LED channel and the low-voltage transistor, a grid electrode of the high-voltage transistor receives a pulse width modulation signal, an input end of the constant current control unit receives a reference voltage signal, the pulse width modulation signal and a digital current setting signal, and an output end of the constant current control unit is connected with the low-voltage transistor so as to realize current regulation and constant current control on the mini LED channel.

Description

用于mini LED背光源的通道电流控制设备及方法Channel current control device and method for mini LED backlight

技术领域technical field

本申请总体上涉及显示设备领域,更具体地涉及用于mini LED背光源的通道电流控制设备及方法。The present application generally relates to the field of display devices, and more specifically relates to channel current control devices and methods for mini LED backlight sources.

背景技术Background technique

在应用于显示设备的背光源中,mini LED背光源作为一种新型的背光源。相较于采用传统背光源的显示设备,采用mini LED背光源的显示设备在动态对比度和亮度上的表现更佳,且具有轻薄、高画质、低功耗和节能等优势,很大程度上提升了显示设备的性能。mini LED背光源可以实现区域调光,因而能够通过精细分区,对显示设备的屏幕上显示的整体画面进行动态调光,从而实现高动态对比度的显示。Among the backlights applied to display devices, the mini LED backlight is a new type of backlight. Compared with display devices using traditional backlights, display devices using mini LED backlights perform better in terms of dynamic contrast and brightness, and have the advantages of thinness, high image quality, low power consumption, and energy saving. Improved display device performance. The mini LED backlight can realize regional dimming, so it can dynamically adjust the overall picture displayed on the screen of the display device through fine partitioning, so as to achieve high dynamic contrast display.

图1为传统背光源的恒流控制电路的示意图。如图1所示,Vout为前级DC/DC或者AC/DC的输出电压,控制单元产生参考电压Vref信号和脉冲宽度调制PWM信号,Vref信号通过运算放大器OP和高压晶体管HM以及电阻R产生通道的恒定电流,PWM信号为调光信号。在PWM调光时,传统背光源采用统一调光的方式,即,各个通道的PWM1-PWMx信号为同一信号,调节时所有通道的LED灯为同一亮度。但是,对于采用mini LED背光源的显示设备而言,考虑到区域调光的需求,在进行调光时每个通道的电流是不同的,所以每个通道得到的PWM调光信号也不同。随着调光区域的增多,mini LED背光源的多个LED通道之间的电流匹配问题以及各个LED通道与控制单元之间的通讯问题都成了急需解决的问题。FIG. 1 is a schematic diagram of a constant current control circuit of a conventional backlight source. As shown in Figure 1, Vout is the output voltage of the previous stage DC/DC or AC/DC. The control unit generates the reference voltage Vref signal and pulse width modulation PWM signal. The Vref signal generates a channel through the operational amplifier OP, the high-voltage transistor HM and the resistor R. The constant current, the PWM signal is the dimming signal. In PWM dimming, the traditional backlight adopts a unified dimming method, that is, the PWM1-PWMx signals of each channel are the same signal, and the LED lights of all channels are at the same brightness during adjustment. However, for a display device using a mini LED backlight, considering the requirement for local dimming, the current of each channel is different during dimming, so the PWM dimming signal obtained by each channel is also different. With the increase of the dimming area, the current matching problem between multiple LED channels of the mini LED backlight and the communication problem between each LED channel and the control unit have become problems that need to be solved urgently.

发明内容Contents of the invention

鉴于以上所述的问题,本申请提供了一种用于mini LED背光源的通道电流控制设备及方法。In view of the above problems, the present application provides a channel current control device and method for mini LED backlight sources.

根据本申请的一方面,提供了一种用于mini LED背光源的通道电流控制设备,包括:控制单元,用于向mini LED背光源中的每个mini LED通道提供对应的参考电压信号、脉冲宽度调制信号和数字电流设置信号;并且针对每个mini LED通道,该通道电流控制设备包括:恒流控制单元、高压晶体管和低压晶体管,其中,高压晶体管串联连接在mini LED通道中的多个LED和低压晶体管之间,并且高压晶体管的栅极接收脉冲宽度调制信号,恒流控制单元的输入端接收参考电压信号、脉冲宽度调制信号和数字电流设置信号,并且恒流控制单元的输出端与低压晶体管连接,以实现对mini LED通道的电流调节和恒流控制。According to one aspect of the present application, there is provided a channel current control device for mini LED backlight, including: a control unit, used to provide each mini LED channel in the mini LED backlight with a corresponding reference voltage signal, pulse A width modulation signal and a digital current setting signal; and for each mini LED channel, the channel current control device includes: a constant current control unit, a high-voltage transistor and a low-voltage transistor, wherein the high-voltage transistor is connected in series to a plurality of LEDs in the mini LED channel and the low-voltage transistor, and the gate of the high-voltage transistor receives the pulse width modulation signal, the input terminal of the constant current control unit receives the reference voltage signal, the pulse width modulation signal and the digital current setting signal, and the output terminal of the constant current control unit is connected with the low voltage Transistor connections for current regulation and constant current control of mini LED channels.

根据本申请的另一方面,提供了一种用于mini LED背光源的通道电流控制方法,应用于如上所述的通道电流控制设备,该方法包括:通过控制单元向mini LED背光源中的每个mini LED通道提供对应的参考电压信号、脉冲宽度调制信号和数字电流设置信号;利用高压晶体管基于脉冲宽度调制信号对每个mini LED通道进行调光控制,利用恒流控制单元和低压晶体管基于参考电压信号、脉冲宽度调制信号和数字电流设置信号实现对miniLED通道的电流调节和恒流控制。According to another aspect of the present application, there is provided a channel current control method for mini LED backlight, which is applied to the channel current control device as described above, and the method includes: sending each of the mini LED backlight through the control unit Each mini LED channel provides the corresponding reference voltage signal, pulse width modulation signal and digital current setting signal; use the high voltage transistor to control the dimming of each mini LED channel based on the pulse width modulation signal, use the constant current control unit and the low voltage transistor based on the reference The voltage signal, pulse width modulation signal and digital current setting signal realize the current regulation and constant current control of the miniLED channel.

根据本申请的又一方面,提供了一种显示设备,包括mini LED背光源和如上所述的用于mini LED背光源的通道电流控制设备。According to yet another aspect of the present application, a display device is provided, including a mini LED backlight source and the above-mentioned channel current control device for the mini LED backlight source.

附图说明Description of drawings

从下面结合附图对本申请的具体实施方式的描述中可以更好地理解本申请,其中:The present application can be better understood from the following description of specific embodiments of the application in conjunction with the accompanying drawings, wherein:

图1示出了传统背光源的恒流控制电路的示意图;FIG. 1 shows a schematic diagram of a constant current control circuit of a conventional backlight source;

图2示出了根据本申请的实施例的用于mini LED背光源的通道电流控制设备的电路的示意图;FIG. 2 shows a schematic diagram of a circuit of a channel current control device for a mini LED backlight according to an embodiment of the present application;

图3示出了根据本申请的实施例的用于mini LED背光源的通道电流控制设备中的每个通道的电流控制电路的示意图;3 shows a schematic diagram of a current control circuit for each channel in a channel current control device for a mini LED backlight according to an embodiment of the present application;

图4示出了根据本申请的实施例的如图3中所示的解码器电路中的每个阵列单元的电路的示意图;FIG. 4 shows a schematic diagram of a circuit of each array unit in the decoder circuit shown in FIG. 3 according to an embodiment of the present application;

图5示出了根据本申请的实施例的电流镜控制单元阵列的示意图;以及5 shows a schematic diagram of a current mirror control unit array according to an embodiment of the application; and

图6示出了根据本申请的另一实施例的电流镜控制单元阵列的示意图。Fig. 6 shows a schematic diagram of a current mirror control unit array according to another embodiment of the present application.

具体实施方式Detailed ways

下面将详细描述本申请的各个方面的特征和示例性实施例。在下面的详细描述中,提出了许多具体细节,以便提供对本申请的全面理解。但是,对于本领域技术人员来说很明显的是,本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请的更好的理解。本申请决不限于下面所提出的任何具体配置,而是在不脱离本申请的精神的前提下覆盖了元素、部件和算法的任何修改、替换和改进。在附图和下面的描述中,没有示出公知的结构和技术,以便避免对本申请造成不必要的模糊。Features and exemplary embodiments of various aspects of the present application will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the application. It will be apparent, however, to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by showing examples of the present application. The application is in no way limited to any specific configuration presented below, but covers any modifications, substitutions and improvements of elements, components and algorithms without departing from the spirit of the application. In the drawings and the following description, well-known structures and techniques have not been shown in order to avoid unnecessarily obscuring the application.

本申请提出了一种用于mini LED背光源的通道电流控制设备,通过参考电压信号设定每个通道的最大亮度电流,通过PWM信号对高压晶体管的控制来实现每个通道的调光,并且通过数字电流设置(ISET)信号来调节每个通道的通道电流。此外,整个显示屏幕可以被分成N个区域(即,N个通道),该N个区域与控制单元之间的通讯可以采用串行的时分复用的方式。从而,根据本申请的通道电流控制设备可以充分满足mini LED背光源的区域调光的需求。This application proposes a channel current control device for mini LED backlight, which sets the maximum brightness current of each channel through the reference voltage signal, and realizes the dimming of each channel through the control of the high-voltage transistor by the PWM signal, and The channel current of each channel is adjusted by a digital current setting (ISET) signal. In addition, the entire display screen can be divided into N areas (that is, N channels), and the communication between the N areas and the control unit can be in a serial time-division multiplexing manner. Therefore, the channel current control device according to the present application can fully meet the demand for local dimming of mini LED backlight sources.

图2示出了根据本申请的实施例的用于mini LED背光源的通道电流控制设备的电路的示意图。如图2所示,mini LED背光源包括多个mini LED通道,通道电流控制设备包括控制单元,用于向每个mini LED通道提供对应的控制信号,例如,参考电压Vref信号、脉冲宽度调制PWM信号和数字ISET信号。FIG. 2 shows a schematic diagram of a circuit of a channel current control device for a mini LED backlight according to an embodiment of the present application. As shown in Figure 2, the mini LED backlight includes multiple mini LED channels, and the channel current control device includes a control unit for providing corresponding control signals to each mini LED channel, such as reference voltage Vref signal, pulse width modulation PWM signal and digital ISET signal.

对于每个mini LED通道,通道电流控制设备包括:恒流控制单元、高压晶体管HM和低压晶体管LM。如图所示,高压晶体管串联连接在mini LED通道中的多个LED和低压晶体管之间,并且高压晶体管的栅极用于接收PWM信号,以基于该PWM信号来对mini LED通道进行调光控制;恒流控制单元的输入端用于接收Vref信号、PWM信号和ISET信号,并且其输出端与低压晶体管连接,以与低压晶体管一起实现对mini LED通道的电流调节和恒流控制。For each mini LED channel, the channel current control device includes: a constant current control unit, a high voltage transistor HM and a low voltage transistor LM. As shown in the figure, the high-voltage transistor is connected in series between multiple LEDs in the mini LED channel and the low-voltage transistor, and the gate of the high-voltage transistor is used to receive the PWM signal to dim the mini LED channel based on the PWM signal. ; The input terminal of the constant current control unit is used to receive the Vref signal, PWM signal and ISET signal, and its output terminal is connected to the low-voltage transistor to realize current regulation and constant current control of the mini LED channel together with the low-voltage transistor.

与图1所示的传统背光源的恒流控制电路相比,在根据本申请的实施例的通道电流控制设备中,图1中与每个通道连接的高压晶体管被替换为高压晶体管与低压晶体管的串联。高压晶体管负责通道的PWM调光以及高压隔离,低压晶体管与恒流控制单元一起用于实现恒流控制。这样,在使用时高压晶体管可以充分导通,相对于传统架构可以在通道上的电流相同的情况下使用较小的高压晶体管,从而可以节约通道的芯片面积。Compared with the constant current control circuit of the traditional backlight shown in FIG. 1, in the channel current control device according to the embodiment of the present application, the high-voltage transistor connected to each channel in FIG. 1 is replaced by a high-voltage transistor and a low-voltage transistor series. The high-voltage transistor is responsible for PWM dimming and high-voltage isolation of the channel, and the low-voltage transistor is used together with the constant current control unit to realize constant current control. In this way, the high-voltage transistor can be fully turned on when in use, and compared with the traditional architecture, a smaller high-voltage transistor can be used when the current on the channel is the same, thereby saving the chip area of the channel.

此外,在图1所示的传统背光源的恒流控制电路中,每个通道的恒流控制是通过运算放大器OP和高压晶体管HM以及电阻R来实现的。与之不同的是,在根据本申请的实施例的通道电流控制设备中,使用电流镜来替代传统背光源的恒流控制电路中的电阻,通过通道接收到的数字ISET信号对通道的当前电流进行控制,通过简单的解码器阵列来控制电流镜电路中的晶体管的导通个数,从而根据导通电流镜单元的个数对通道电流进行控制。这样可以省去对数字ISET信号进行数模转换的数模转换单元,同时可以实现精密的通道电流控制。下面将参考图3对根据本申请的实施例的恒流控制原理进行解释。In addition, in the constant current control circuit of the traditional backlight source shown in FIG. 1 , the constant current control of each channel is realized through the operational amplifier OP, the high voltage transistor HM and the resistor R. The difference is that in the channel current control device according to the embodiment of the present application, a current mirror is used to replace the resistor in the constant current control circuit of the traditional backlight source, and the current current current of the channel is affected by the digital ISET signal received by the channel. For control, the number of transistors in the current mirror circuit is controlled through a simple decoder array, so as to control the channel current according to the number of current mirror units. In this way, the digital-to-analog conversion unit for digital-to-analog conversion of the digital ISET signal can be omitted, and precise channel current control can be realized at the same time. The principle of constant current control according to the embodiment of the present application will be explained below with reference to FIG. 3 .

图3示出了根据本申请的实施例的用于mini LED背光源的通道电流控制设备中的每个通道的电流控制电路的示意图。如图3所示,每个通道的电流控制电路包括恒流控制单元、高压晶体管和低压晶体管。恒流控制单元的内部电路结构如两个虚线框中所示。具体来说,恒流控制单元包括电流镜电路和解码器电路,电流镜电路包括输入侧晶体管M0、和并联连接的N个输出侧晶体管M1至MN,解码器电路用于基于数字ISET信号生成N个电流镜控制信号,分别用于控制N个输出侧晶体管中对应的输出侧晶体管的导通或关断,从而控制导通电流镜单元的个数。Fig. 3 shows a schematic diagram of a current control circuit for each channel in the channel current control device for mini LED backlight according to an embodiment of the present application. As shown in Figure 3, the current control circuit of each channel includes a constant current control unit, a high voltage transistor and a low voltage transistor. The internal circuit structure of the constant current control unit is shown in the two dashed boxes. Specifically, the constant current control unit includes a current mirror circuit and a decoder circuit. The current mirror circuit includes an input-side transistor M0 and N output-side transistors M1 to M N connected in parallel. The decoder circuit is used to generate The N current mirror control signals are respectively used to control the turn-on or turn-off of the corresponding output-side transistors among the N output-side transistors, so as to control the number of turn-on current mirror units.

数字ISET信号可以包括n位二进制码,从而可以控制2n个电流镜的导通或关断,即,N等于2的n次方。如图3中所示,ISET信号例如是ISET<10:0>,相应地,该信号可以用于控制2048个电流镜单元的导通或关断。在该示例中,n=11且N=2048。关于如何通过解码器电路基于数字ISET信号生成N个电流镜控制信号,将在下文中参考图4至图6来进行详细描述。The digital ISET signal may include n-bit binary codes, so as to control 2 n current mirrors to be turned on or off, that is, N is equal to 2 to the nth power. As shown in FIG. 3 , the ISET signal is, for example, ISET<10:0>. Correspondingly, this signal can be used to control the turn-on or turn-off of 2048 current mirror units. In this example, n=11 and N=2048. How to generate N current mirror control signals based on the digital ISET signal through the decoder circuit will be described in detail below with reference to FIGS. 4 to 6 .

另外,如图3所示,Vref信号通过第一运算放大器OP1连接到输入侧晶体管M0的栅极,用于设定mini LED通道的最大亮度电流,低压晶体管的栅极通过第二运算放大器OP2连接到输入侧晶体管M0的漏极,并且低压晶体管的源极连接到并联N个输出侧晶体管的漏极。In addition, as shown in Figure 3, the Vref signal is connected to the gate of the input-side transistor M0 through the first operational amplifier OP1, which is used to set the maximum brightness current of the mini LED channel, and the gate of the low-voltage transistor is connected through the second operational amplifier OP2 to the drain of the input-side transistor M0, and the source of the low-voltage transistor is connected to the drains of N output-side transistors in parallel.

需要注意的是,根据本申请的一些实施例,低压晶体管可以包括并联的多个低压晶体管,并且恒流控制单元还可以包括逻辑控制电路,用于基于PWM信号和数字ISET信号的预定数目的高比特位来生成多个低压晶体管控制信号,以分别控制该多个低压晶体管中对应的低压晶体管的导通或关断。例如,图3示出了三个低压晶体管和对应的三个低压晶体管控制信号a、b、c。实际上,每个低压晶体管也可以是预定数目的低压晶体管的并联。例如,图3中所示的m=1表示第一个低压晶体管可以包括一个低压晶体管,m=3表示第二个低压晶体管可以包括并联的三个低压晶体管,m=5表示第三个低压晶体管可以包括并联的三个低压晶体管。也就是说,图3中所示的每个通道可以包括并联的9个低压晶体管。It should be noted that, according to some embodiments of the present application, the low-voltage transistor may include a plurality of low-voltage transistors connected in parallel, and the constant current control unit may also include a logic control circuit for a predetermined number of high voltage transistors based on the PWM signal and the digital ISET signal. A plurality of low-voltage transistor control signals are generated bit by bit, so as to respectively control the turn-on or turn-off of corresponding low-voltage transistors in the plurality of low-voltage transistors. For example, FIG. 3 shows three low voltage transistors and corresponding three low voltage transistor control signals a, b, c. Actually, each low voltage transistor may also be a parallel connection of a predetermined number of low voltage transistors. For example, m=1 shown in FIG. 3 indicates that the first low-voltage transistor may include one low-voltage transistor, m=3 indicates that the second low-voltage transistor may include three low-voltage transistors connected in parallel, and m=5 indicates that the third low-voltage transistor Three low voltage transistors connected in parallel may be included. That is, each channel shown in FIG. 3 may include 9 low-voltage transistors connected in parallel.

如图3所示,逻辑控制电路例如可以接收数字ISET信号的最高三位以产生低压晶体管控制信号a、b、c,用于控制导通的低压晶体管的个数。在调节通道电流时,根据电流的大小量级来确定导通的低压晶体管的个数,可以在电流调节的过程中保持低压晶体管的栅极电压在较小的范围内波动,从而对通道的抗干扰性能有一定程度的提高。As shown in FIG. 3 , for example, the logic control circuit can receive the highest three bits of the digital ISET signal to generate low-voltage transistor control signals a, b, and c for controlling the number of turned-on low-voltage transistors. When adjusting the channel current, the number of low-voltage transistors turned on is determined according to the magnitude of the current, and the gate voltage of the low-voltage transistor can be kept fluctuating within a small range during the current adjustment process, thereby reducing the resistance of the channel. Jamming performance has been somewhat improved.

下面将参考图4至图6来描述根据本申请的实施例的解码器电路的具体结构以及如何基于数字ISET信号生成N个电流镜控制信号。The specific structure of the decoder circuit according to the embodiment of the present application and how to generate N current mirror control signals based on the digital ISET signal will be described below with reference to FIGS. 4 to 6 .

为了控制N个电流镜单元,解码器电路可以包括N个解码器子单元,用于生成N个电流镜控制信号,以分别控制N个输出侧晶体管中对应的输出侧晶体管的导通或关断。In order to control N current mirror units, the decoder circuit may include N decoder subunits for generating N current mirror control signals to respectively control the turn-on or turn-off of corresponding output-side transistors among the N output-side transistors .

下面以11位的ISET<10:0>信号为例,想要将11位的ISET信号转换为对应数量的电流镜控制信号,一种方案可以是用11位二进制码来控制211个晶体管导通或关断,只需要相应的11根控制信号即可,但该方案受电流镜匹配精度的影响很大,尤其在高比特位发生进位时,导通的电流镜单元会发生大量变化。例如,当控制码字从1023(16进制数对应0x3ff)变化至1024(16进制数对应0x400)时,将会出现此前导通的电流镜单元关断,此前关断的电流镜单元导通,受到电流镜匹配精度的影响,总电流可能发生较大变化,从而影响电流调节的线性度。因此,该方案对电流镜匹配精度的要求很高。Take the 11-bit ISET<10:0> signal as an example below. If you want to convert the 11-bit ISET signal into a corresponding number of current mirror control signals, one solution can be to use 11-bit binary codes to control 2 11 transistors. Only 11 corresponding control signals are needed to turn on or off, but this scheme is greatly affected by the matching accuracy of the current mirror, especially when a carry occurs in a high bit, the current mirror unit that is turned on will change a lot. For example, when the control code word changes from 1023 (the hexadecimal number corresponds to 0x3ff) to 1024 (the hexadecimal number corresponds to 0x400), the current mirror unit that was turned on before will be turned off, and the current mirror unit that was turned off before will turn on Generally, due to the influence of the matching accuracy of the current mirror, the total current may change greatly, thus affecting the linearity of current regulation. Therefore, this solution has high requirements on the matching accuracy of the current mirror.

另一种方案是将控制信号转换为温度计码,此时在相邻码字变化时只会有1个电流镜的导通状态发生变化,可以提高电流调节的线性度。但是,对于要基于11位的ISET信号生成211个电流镜控制信号的情况,所需要的控制信号的数量过多。Another solution is to convert the control signal into a thermometer code. At this time, when adjacent code words change, only the conduction state of one current mirror changes, which can improve the linearity of current regulation. However, in the case of generating 2 11 current mirror control signals based on the 11-bit ISET signal, the number of required control signals is excessive.

根据本申请的实施例,提出了矩阵阵列控制方案。具体而言,解码器电路可以包括N个解码器子单元,这些解码器子单元可以被排布为M行×K列的矩阵阵列,其中所述矩阵阵列中的每个阵列单元可以包括一个或多个解码器子单元。这里,M乘以K可以等于或小于N。当M乘以K等于N时,矩阵阵列中的每个阵列单元包括一个解码器子单元,而当M乘以K小于N时,矩阵阵列中的每个阵列单元可以包括多个解码器子单元。According to an embodiment of the present application, a matrix array control scheme is proposed. Specifically, the decoder circuit may include N decoder subunits, and these decoder subunits may be arranged as a matrix array of M rows×K columns, wherein each array unit in the matrix array may include one or Multiple decoder subunits. Here, M times K may be equal to or smaller than N. When M times K is equal to N, each array unit in the matrix array includes one decoder subunit, and when M times K is less than N, each array unit in the matrix array may include multiple decoder subunits .

图4示出了根据本申请的实施例的如图3中所示的解码器电路中的每个阵列单元的电路的示意图。该阵列单元的输入控制信号分别为A、B、C,输出信号为D,其中输入控制信号A、B、C为基于ISET信号转换而来的温度计码信号,输出信号D为该阵列单元所生成的电流镜控制信号。因而,解码器电路还包括码转换单元(图中未示出),用于将ISET信号转换为每个阵列单元的输入控制信号A、B、C。如图4所示,每个阵列单元受到A、B、C信号的控制,其控制逻辑为:C||(A&B),即C信号存在时,相应的一行阵列单元对应的电流镜单元全部导通,C信号不存在时,由A&B阵列来控制对应的电流镜单元的导通或关断。FIG. 4 shows a schematic diagram of a circuit of each array unit in the decoder circuit shown in FIG. 3 according to an embodiment of the present application. The input control signals of the array unit are A, B, and C respectively, and the output signal is D, wherein the input control signals A, B, and C are thermometer code signals converted based on the ISET signal, and the output signal D is generated by the array unit The current mirror control signal. Therefore, the decoder circuit further includes a code conversion unit (not shown in the figure), which is used to convert the ISET signal into input control signals A, B, and C of each array unit. As shown in Figure 4, each array unit is controlled by A, B, and C signals, and its control logic is: C||(A&B), that is, when the C signal exists, all the current mirror units corresponding to the corresponding row of array units are turned on When the C signal is not present, the A&B array controls the corresponding current mirror unit to be turned on or off.

根据本申请的一个实施例,当M乘以K等于N时,矩阵阵列中的每个阵列单元包括一个解码器子单元,码转换单元可以将ISET信号转换为包括M位温度计码的第一行控制信号C、包括M位温度计码的第二行控制信号A和包括K位温度计码的列控制信号B。第一行控制信号C和第二行控制信号A中的每一位分别用于控制N个解码器子单元中相应的一行解码器子单元,列控制信号B中的每一位分别用于控制N个解码器子单元中相应的一列解码器子单元,并且所述第一行控制信号的优先级高于所述第二行控制信号。According to an embodiment of the present application, when M multiplied by K is equal to N, each array unit in the matrix array includes a decoder subunit, and the code conversion unit can convert the ISET signal into the first row including the M-bit thermometer code A control signal C, a second row control signal A including an M-bit thermometer code, and a column control signal B including a K-bit thermometer code. Each bit in the first row control signal C and the second row control signal A is used to control a corresponding row of decoder subunits among the N decoder subunits, and each bit in the column control signal B is used to control A corresponding column of decoder subunits among the N decoder subunits, and the priority of the first row control signal is higher than that of the second row control signal.

更具体而言,码转换单元可以被配置为基于ISET信号的最高m位生成第一行控制信号C和第二行控制信号A,并且基于ISET信号的剩余(n-m)位生成列控制信号。例如,第一行控制信号C的M位温度计码所表示的值等于ISET信号的最高m位的二进制码表示的值,第二行控制信号A的M位温度计码所表示的值等于ISET信号的最高m位的二进制码表示的值加1,列控制信号的K位温度计码所表示的值等于ISET信号的剩余(n-m)位的二进制码表示的值。More specifically, the code conversion unit may be configured to generate the first row control signal C and the second row control signal A based on the highest m bits of the ISET signal, and generate the column control signal based on the remaining (n-m) bits of the ISET signal. For example, the value represented by the M-bit thermometer code of the control signal C in the first row is equal to the value represented by the highest m-bit binary code of the ISET signal, and the value represented by the M-bit thermometer code of the control signal A in the second row is equal to the value represented by the ISET signal Add 1 to the value represented by the binary code of the highest m bits, and the value represented by the K-bit thermometer code of the column control signal is equal to the value represented by the binary code of the remaining (n-m) bits of the ISET signal.

图5示出了根据本申请的实施例的电流镜控制单元阵列的示意图。在该实施例中,假设ISET信号为9位的二进制码信号ISET<8:0>,可以将电流镜控制单元阵列设计为16×32的矩阵阵列。这里的电流镜控制单元实际上就对应于解码器电路中的解码器子单元。也就是说,解码器电路可以被排布为包括16行32列的解码器子单元(即,一共512个解码器子单元),每个矩阵阵列单元包括一个解码器子单元。如图5所示,A1至A32可以对应于第1行解码器子单元,P1至P32可以对应于第16行解码器子单元,A1至P1可以对应于第1列解码器子单元,A32至P32可以对应于第32列解码器子单元。FIG. 5 shows a schematic diagram of a current mirror control unit array according to an embodiment of the present application. In this embodiment, assuming that the ISET signal is a 9-bit binary code signal ISET<8:0>, the current mirror control unit array can be designed as a 16×32 matrix array. The current mirror control unit here actually corresponds to the decoder subunit in the decoder circuit. That is to say, the decoder circuit can be arranged to include decoder subunits in 16 rows and 32 columns (ie, a total of 512 decoder subunits), and each matrix array unit includes a decoder subunit. As shown in Figure 5, A1 to A32 may correspond to the first row of decoder subunits, P1 to P32 may correspond to the 16th row of decoder subunits, A1 to P1 may correspond to the first column of decoder subunits, A32 to P32 may correspond to the 32nd column decoder subunit.

在该实施例中,ISET信号的最高4位ISET<8:5>被转换为采用温度计码的第一行信号C<15:0>,其最低5位ISET<4:0>被转换为采用温度计码的列信号B<31:0>,并且ISET<8:5>+1被转换为采用温度计码的第二行信号A<15:0>,即A比C多控制一行。当控制信号ISET<8:0>来临时,第一行信号C将控制前ISET<8:5>行的单元全部导通,第ISET<8:5>+1行的行信号A为高,此时该行将根据列信号B<31:0>控制ISET<4:0>个单元导通,实现总导通单元数量:ISET<8:5>*32+ISET<4:0>=ISET<8:0>,与控制码字数量相同。在以上等式中,ISET<8:5>表示基于该高4位控制信号控制导通的电流镜单元的数量,ISET<4:0>表示基于该低5位控制信号控制导通的电流镜单元的数量,ISET<8:0>表示基于该9位控制信号控制导通的电流镜单元的数量。In this embodiment, the highest 4 bits ISET<8:5> of the ISET signal are converted to the first row signal C<15:0> using thermometer code, and the lowest 5 bits ISET<4:0> are converted to use The column signal B<31:0> of the thermometer code, and ISET<8:5>+1 is converted into the second row signal A<15:0> of the thermometer code, that is, A controls one more row than C. When the control signal ISET<8:0> comes, the signal C of the first line will control all the units of the previous ISET<8:5> line to be turned on, and the line signal A of the line ISET<8:5>+1 is high, At this time, the row will control the conduction of ISET<4:0> units according to the column signal B<31:0>, and realize the total number of conduction units: ISET<8:5>*32+ISET<4:0>=ISET< 8:0>, which is the same as the number of control codewords. In the above equation, ISET<8:5> represents the number of current mirror units that are turned on based on the upper 4-bit control signal, and ISET<4:0> represents the current mirror that is turned on based on the lower 5-bit control signal The number of units, ISET<8:0> indicates the number of current mirror units that are turned on based on the 9-bit control signal.

根据该实施例,由于行列的控制信号A、B、C均采用温度计码,因此以码字+1为例,不论码字是否出现进位,每次只会增加一个新的导通的电流镜单元,而原有导通的电流镜单元不会发生变化。既提高了电流调节的线性度,又降低了控制信号的数量。例如,按照图5所示的电流镜控制单元阵列的排布方式,为了基于9位的ISET信号控制512个电流镜单元的导通或关断,只需要16+16+32=64个控制信号,而非512个控制信号。According to this embodiment, since the control signals A, B, and C of the rows and columns all use thermometer codes, so taking the code word +1 as an example, no matter whether there is a carry in the code word, only a new conductive current mirror unit will be added each time , while the original conducting current mirror unit will not change. This not only improves the linearity of current regulation, but also reduces the number of control signals. For example, according to the arrangement of the current mirror control unit array shown in Figure 5, in order to control the on or off of 512 current mirror units based on the 9-bit ISET signal, only 16+16+32=64 control signals are required , instead of 512 control signals.

此外,针对更多位数的ISET信号,可以根据类似于图5所示的方式进行电流镜控制单元阵列的排布。例如,当ISET信号为11位的二进制码字ISET<10:0>时,基于该ISET信号可以控制2048个电流镜单元的导通或关断。采用类似于图5所示的阵列排布方式,可以将电流镜控制单元排布为32行64列的矩阵阵列。采用这种阵列排布,如果行列的控制信号A、B、C均采用温度计码,则需要32+32+64=128个控制信号,与2048个控制信号相比也大幅度地降低了控制信号的数量。In addition, for ISET signals with more digits, the array of current mirror control units can be arranged in a manner similar to that shown in FIG. 5 . For example, when the ISET signal is an 11-bit binary code word ISET<10:0>, 2048 current mirror units can be controlled to be turned on or off based on the ISET signal. Using an array arrangement similar to that shown in FIG. 5 , the current mirror control units can be arranged as a matrix array with 32 rows and 64 columns. With this array arrangement, if the control signals A, B, and C of the rows and columns all use thermometer codes, 32+32+64=128 control signals are required, which greatly reduces the control signals compared with 2048 control signals quantity.

但是,为了进一步降低控制信号的数量,可以考虑将ISET信号的若干个最高位转换为行列控制信号,将剩余的少量低位转换为控制阵列单元内的解码器子单元。However, in order to further reduce the number of control signals, it may be considered to convert some of the highest bits of the ISET signal into row and column control signals, and convert the remaining few low bits to control the decoder subunits in the array unit.

采用这种阵列排布方式,当ISET信号为n位的二进制码时,为了控制N=2n个电流镜单元,解码器电路中的N个解码器子单元可以被排布为M行×K列的矩阵阵列,其中,矩阵阵列中的每个阵列单元包括多个解码器子单元。例如,M乘以K可以等于2的p次方(p小于n),矩阵阵列中的每个阵列单元包括2的(n-p)次方个解码器子单元。With this array arrangement, when the ISET signal is an n-bit binary code, in order to control N=2 n current mirror units, the N decoder subunits in the decoder circuit can be arranged as M rows×K A matrix array of columns, wherein each array unit in the matrix array includes a plurality of decoder subunits. For example, M multiplied by K may be equal to 2 to the pth power (p is smaller than n), and each array unit in the matrix array includes 2 to the (np) power of decoder subunits.

在这种情况下,与之前描述的码字转换方式类似,解码器电路中的码转换单元可以将ISET信号的最高p位转换为包括M位温度计码的第一行控制信号、包括M位温度计码的第二行控制信号和包括K位温度计码的列控制信号,并且将ISET信号的剩余(n-p)位转换为包括2的(n-p)次方位温度计码的阵列单元控制信号。第一行控制信号和第二行控制信号中的每一位分别用于控制矩阵阵列中相应的一行阵列单元对应的解码器子单元,列控制信号中的每一位分别用于控制矩阵阵列中相应的一列阵列单元对应的解码器子单元,第一行控制信号的优先级高于第二行控制信号,并且阵列单元控制信号的每一位分别用于控制矩阵阵列中的每个阵列单元中对应的解码器子单元。In this case, similar to the code word conversion method described before, the code conversion unit in the decoder circuit can convert the highest p bits of the ISET signal into the first line control signal including the M-bit thermometer code, including the M-bit thermometer code. The second row control signal of the code and the column control signal including the K-bit thermometer code, and convert the remaining (n-p) bits of the ISET signal into an array unit control signal including the 2(n-p)th position thermometer code. Each bit in the first row control signal and the second row control signal is used to control the decoder subunit corresponding to the corresponding row of array units in the matrix array, and each bit in the column control signal is used to control the decoder subunits in the matrix array respectively. Corresponding to the decoder subunit corresponding to a column of array units, the priority of the first row control signal is higher than that of the second row control signal, and each bit of the array unit control signal is used to control each array unit in the matrix array. Corresponding decoder subunit.

具体而言,ISET信号的最高p位构成的ISET信号可以被称为高位ISET信号,码转换单元可以被配置为基于高位ISET信号的最高m位生成第一行控制信号和第二行控制信号,并且基于高位ISET信号的剩余(p-m)位生成列控制信号。第一行控制信号的M位温度计码所表示的值等于高位ISET信号的最高m位的二进制码表示的值,第二行控制信号的M位温度计码所表示的值等于高位ISET信号的最高m位的二进制码表示的值加1;列控制信号的K位温度计码所表示的值等于高位ISET信号的剩余(p-m)位的二进制码表示的值。Specifically, the ISET signal formed by the highest p bits of the ISET signal may be referred to as a high-order ISET signal, and the code conversion unit may be configured to generate the first row control signal and the second row control signal based on the highest m bits of the high-order ISET signal, And a column control signal is generated based on the remaining (p-m) bits of the upper ISET signal. The value represented by the M-bit thermometer code of the control signal in the first row is equal to the value represented by the highest m-bit binary code of the high-order ISET signal, and the value represented by the M-bit thermometer code of the control signal in the second row is equal to the highest m of the high-order ISET signal The value represented by the binary code of the bit is added by 1; the value represented by the K-bit thermometer code of the column control signal is equal to the value represented by the binary code of the remaining (p-m) bits of the high-order ISET signal.

图6示出了根据本申请的另一实施例的电流镜控制单元阵列的示意图。如图6所示,针对11位的ISET信号ISET<10:0>,在将该信号的最高9位信号ISET<11:2>转化为行列控制基础上,将低2位信号ISET<1:0>转化为控制更精细的电流镜单元的温度计码信号,其控制的每个电流镜单元的电流大小是原先控制的电流镜单元的1/4,根据ISET信号的低2位信号控制这些电流镜单元的导通或关断。采用图6所示的电流镜控制单元阵列排布方式,为了实现对2048个电流镜单元的控制,一共需要16+16+32+4=68个控制信号,相对于采用类似于图5所示的电流镜控制单元阵列排布方式而言,可以进一步减少控制信号的数量。Fig. 6 shows a schematic diagram of a current mirror control unit array according to another embodiment of the present application. As shown in Figure 6, for the 11-bit ISET signal ISET<10:0>, on the basis of converting the highest 9-bit signal ISET<11:2> of the signal into row and column control, the lower 2-bit signal ISET<1: 0> is converted into a thermometer code signal that controls a finer current mirror unit, and the current size of each current mirror unit controlled by it is 1/4 of the original current mirror unit, and these currents are controlled according to the low 2-bit signal of the ISET signal turn on or off of the mirror unit. Using the array arrangement of the current mirror control units shown in Figure 6, in order to realize the control of 2048 current mirror units, a total of 16+16+32+4=68 control signals are needed, compared to the method similar to that shown in Figure 5 In terms of the current mirror control unit array arrangement, the number of control signals can be further reduced.

此外,根据本申请的实施例,还提供了一种用于mini LED背光源的通道电流控制方法。该方法应用于如上所述的通道电流控制设备,并且包括:通过控制单元向mini LED背光源中的每个mini LED通道提供对应的参考电压信号、脉冲宽度调制信号和数字电流设置信号;利用高压晶体管基于脉冲宽度调制信号对每个mini LED通道进行调光控制,利用恒流控制单元和低压晶体管基于参考电压信号、脉冲宽度调制信号和数字电流设置信号实现对mini LED通道的电流调节和恒流控制。In addition, according to the embodiment of the present application, a channel current control method for a mini LED backlight source is also provided. The method is applied to the channel current control device as described above, and includes: providing a corresponding reference voltage signal, a pulse width modulation signal and a digital current setting signal to each mini LED channel in the mini LED backlight through the control unit; The transistor controls the dimming of each mini LED channel based on the pulse width modulation signal, and uses the constant current control unit and the low voltage transistor to realize the current regulation and constant current of the mini LED channel based on the reference voltage signal, pulse width modulation signal and digital current setting signal control.

基于根据本申请的实施例的通道电流控制设备及方法可以充分满足mini LED背光源的区域调光的需求。The channel current control device and method based on the embodiments of the present application can fully meet the demand for local dimming of mini LED backlight sources.

上文中提到了“一个实施例”、“另一实施例”、“实施例”,然而应理解,在各个实施例中提及的特征并不一定只能应用于该实施例,而是可能用于其他实施例。一个实施例中的特征可以应用于另一实施例,或者可以被包括在另一实施例中。"One embodiment", "another embodiment" and "embodiment" are mentioned above, but it should be understood that the features mentioned in each embodiment are not necessarily only applicable to this embodiment, but may be used in other embodiments. Features in one embodiment can be applied to, or included in, another embodiment.

上文中提到了“第一”、“第二”…等序数词。然而应理解这些表述仅仅是为了叙述和引用的方便,所限定的对象并不存在次序上的先后关系。Ordinal numerals such as "first", "second"... are mentioned above. However, it should be understood that these expressions are only for the convenience of description and reference, and there is no sequential relationship between the defined objects.

此外,各种操作或步骤以最有助于理解说明性实施例的方式被描述为多个离散操作;然而,描述的顺序不应被解释为暗示这些操作或步骤必须依赖于顺序。特别是,这些操作或步骤不需要按照呈现的顺序执行。Additionally, various operations or steps have been described as multiple discrete operations in a manner that is most helpful in understanding the illustrative embodiments; however, the order of description should not be construed as to imply that these operations or steps are necessarily order dependent. In particular, these operations or steps need not be performed in the order presented.

本申请可以以其他的具体形式实现,而不脱离其精神和本质特征。例如,特定实施例中所描述的特征可以被修改,而系统体系结构并不脱离本申请的基本精神。因此,当前的实施例在所有方面都被看作是示例性的而非限定性的,本申请的范围由所附权利要求而非上述描述定义,并且,落入权利要求的含义和等同物的范围内的全部改变从而都被包括在本申请的范围之中。The present application may be implemented in other specific forms without departing from its spirit and essential characteristics. For example, features described in certain embodiments may be modified without departing from the basic spirit of the application. Accordingly, the present embodiments are to be considered in all respects as illustrative rather than restrictive, the scope of the application being defined by the appended claims rather than the above description, and within the meaning and equivalents of the claims All changes in scope are thereby embraced within the scope of this application.

Claims (20)

1.一种用于mini LED背光源的通道电流控制设备,包括:1. A channel current control device for mini LED backlight, comprising: 控制单元,用于向所述mini LED背光源中的每个mini LED通道提供对应的参考电压信号、脉冲宽度调制信号和数字电流设置信号;并且a control unit for providing a corresponding reference voltage signal, a pulse width modulation signal and a digital current setting signal to each mini LED channel in the mini LED backlight; and 针对所述每个mini LED通道,所述通道电流控制设备包括:恒流控制单元、高压晶体管和低压晶体管,For each mini LED channel, the channel current control device includes: a constant current control unit, a high-voltage transistor and a low-voltage transistor, 其中,所述高压晶体管串联连接在所述mini LED通道中的多个LED和所述低压晶体管之间,并且所述高压晶体管的栅极用于接收所述脉冲宽度调制信号,Wherein, the high-voltage transistor is connected in series between a plurality of LEDs in the mini LED channel and the low-voltage transistor, and the gate of the high-voltage transistor is used to receive the pulse width modulation signal, 所述恒流控制单元的输入端用于接收所述参考电压信号、所述脉冲宽度调制信号和所述数字电流设置信号,并且所述恒流控制单元的输出端与所述低压晶体管连接,以实现对所述mini LED通道的电流调节和恒流控制。The input terminal of the constant current control unit is used to receive the reference voltage signal, the pulse width modulation signal and the digital current setting signal, and the output terminal of the constant current control unit is connected to the low voltage transistor to Realize current regulation and constant current control on the mini LED channel. 2.根据权利要求1所述的通道电流控制设备,其中,所述恒流控制单元包括电流镜电路和解码器电路,2. The channel current control device according to claim 1, wherein the constant current control unit comprises a current mirror circuit and a decoder circuit, 所述电流镜电路包括输入侧晶体管、和并联连接的N个输出侧晶体管,The current mirror circuit includes an input-side transistor and N output-side transistors connected in parallel, 所述解码器电路用于基于所述数字电流设置信号生成N个电流镜控制信号,分别用于控制所述N个输出侧晶体管中对应的输出侧晶体管的导通或关断,The decoder circuit is configured to generate N current mirror control signals based on the digital current setting signal, which are respectively used to control the turn-on or turn-off of corresponding output-side transistors among the N output-side transistors, 其中,所述数字电流设置信号包括n位二进制码,并且所述N等于2的n次方。Wherein, the digital current setting signal includes an n-bit binary code, and the N is equal to 2 to the nth power. 3.根据权利要求2所述的通道电流控制设备,其中,所述参考电压信号通过第一运算放大器连接到所述输入侧晶体管的栅极,用于设定所述mini LED通道的最大亮度电流。3. The channel current control device according to claim 2, wherein the reference voltage signal is connected to the gate of the input side transistor through a first operational amplifier for setting the maximum brightness current of the mini LED channel . 4.根据权利要求2所述的通道电流控制设备,其中,所述低压晶体管的栅极通过第二运算放大器连接到所述输入侧晶体管的漏极,并且所述低压晶体管的源极连接到所述N个输出侧晶体管的漏极。4. The channel current control device according to claim 2, wherein the gate of the low-voltage transistor is connected to the drain of the input-side transistor through a second operational amplifier, and the source of the low-voltage transistor is connected to the The drains of the N output side transistors. 5.根据权利要求1至4中任一项所述的通道电流控制设备,其中,所述低压晶体管包括并联的多个低压晶体管,并且所述恒流控制单元还包括:5. The channel current control device according to any one of claims 1 to 4, wherein the low voltage transistor comprises a plurality of low voltage transistors connected in parallel, and the constant current control unit further comprises: 逻辑控制电路,用于基于所述脉冲宽度调制信号和所述数字电流设置信号的预定数目的高比特位来生成多个低压晶体管控制信号,分别用于控制所述多个低压晶体管中对应的低压晶体管的导通或关断。A logic control circuit, configured to generate a plurality of low-voltage transistor control signals based on the pulse width modulation signal and a predetermined number of high bits of the digital current setting signal, respectively used to control corresponding low-voltage transistors among the plurality of low-voltage transistors Transistors are turned on or off. 6.根据权利要求2所述的通道电流控制设备,其中,所述解码器电路包括N个解码器子单元,用于生成所述N个电流镜控制信号;并且6. The channel current control device according to claim 2, wherein the decoder circuit comprises N decoder subunits for generating the N current mirror control signals; and 所述N个解码器子单元被排布为M行×K列的矩阵阵列,其中所述矩阵阵列中的每个阵列单元包括一个或多个解码器子单元。The N decoder subunits are arranged as a matrix array of M rows×K columns, wherein each array unit in the matrix array includes one or more decoder subunits. 7.根据权利要求6所述的通道电流控制设备,其中,M乘以K等于N,所述矩阵阵列中的每个阵列单元包括一个解码器子单元。7. The channel current control device according to claim 6, wherein M multiplied by K is equal to N, and each array unit in the matrix array includes a decoder subunit. 8.根据权利要求7所述的通道电流控制设备,其中,所述解码器电路还包括码转换单元,用于将所述数字电流设置信号转换为包括M位温度计码的第一行控制信号、包括M位温度计码的第二行控制信号和包括K位温度计码的列控制信号;8. The channel current control device according to claim 7, wherein the decoder circuit further comprises a code conversion unit for converting the digital current setting signal into a first row control signal comprising an M-bit thermometer code, A second row control signal including an M-bit thermometer code and a column control signal including a K-bit thermometer code; 所述第一行控制信号和所述第二行控制信号中的每一位分别用于控制所述N个解码器子单元中相应的一行解码器子单元;Each bit of the first row control signal and the second row control signal is used to control a corresponding row of decoder subunits among the N decoder subunits; 所述列控制信号中的每一位分别用于控制所述N个解码器子单元中相应的一列解码器子单元;并且Each bit in the column control signal is used to control a corresponding column of decoder subunits among the N decoder subunits; and 所述第一行控制信号的优先级高于所述第二行控制信号。The priority of the first row control signal is higher than that of the second row control signal. 9.根据权利要求8所述的通道电流控制设备,其中,所述码转换单元被配置为基于所述数字电流设置信号的最高m位生成所述第一行控制信号和所述第二行控制信号,并且基于所述数字电流设置信号的剩余(n-m)位生成所述列控制信号。9. The channel current control device according to claim 8, wherein the code conversion unit is configured to generate the first row control signal and the second row control signal based on the highest m bits of the digital current setting signal signal, and generate the column control signal based on the remaining (n-m) bits of the digital current setting signal. 10.根据权利要求9所述的通道电流控制设备,其中,所述第一行控制信号的M位温度计码所表示的值等于所述数字电流设置信号的最高m位的二进制码表示的值;10. The channel current control device according to claim 9, wherein the value represented by the M-bit thermometer code of the first row of control signals is equal to the value represented by the highest m-bit binary code of the digital current setting signal; 所述第二行控制信号的M位温度计码所表示的值等于所述数字电流设置信号的最高m位的二进制码表示的值加1;The value represented by the M-bit thermometer code of the second row control signal is equal to the value represented by the highest m-bit binary code of the digital current setting signal plus 1; 所述列控制信号的K位温度计码所表示的值等于所述数字电流设置信号的剩余(n-m)位的二进制码表示的值。The value represented by the K-bit thermometer code of the column control signal is equal to the value represented by the binary code of the remaining (n-m) bits of the digital current setting signal. 11.根据权利要求6所述的通道电流控制设备,其中,M乘以K等于2的p次方且p小于n,所述矩阵阵列中的每个阵列单元包括2的(n-p)次方个解码器子单元。11. The channel current control device according to claim 6, wherein, M multiplied by K is equal to the p power of 2 and p is less than n, and each array unit in the matrix array comprises 2 (n-p) power decoder subunit. 12.根据权利要求11所述的通道电流控制设备,其中,所述解码器电路还包括码转换单元,用于将所述数字电流设置信号的最高p位转换为包括M位温度计码的第一行控制信号、包括M位温度计码的第二行控制信号和包括K位温度计码的列控制信号,并且将所述数字电流设置信号的剩余(n-p)位转换为包括2的(n-p)次方位温度计码的阵列单元控制信号;12. The channel current control device according to claim 11, wherein the decoder circuit further comprises a code conversion unit for converting the highest p bits of the digital current setting signal into the first p bits comprising an M-bit thermometer code. a row control signal, a second row control signal comprising an M-bit thermometer code, and a column control signal comprising a K-bit thermometer code, and converting the remaining (n-p) bits of the digital current setting signal into a (n-p) order comprising 2 The array unit control signal of the thermometer code; 所述第一行控制信号和所述第二行控制信号中的每一位分别用于控制所述矩阵阵列中相应的一行阵列单元;Each bit of the first row control signal and the second row control signal is used to control a corresponding row of array units in the matrix array; 所述列控制信号中的每一位分别用于控制所述矩阵阵列中相应的一列阵列单元;Each bit in the column control signal is used to control a corresponding column of array units in the matrix array; 所述第一行控制信号的优先级高于所述第二行控制信号;并且the first row control signal has a higher priority than the second row control signal; and 所述阵列单元控制信号的每一位分别用于控制所述矩阵阵列中的每个阵列单元中对应的解码器子单元。Each bit of the array unit control signal is respectively used to control a corresponding decoder subunit in each array unit in the matrix array. 13.根据权利要求12所述的通道电流控制设备,其中,所述数字电流设置信号的最高p位构成的数字电流设置信号被称为高位数字电流设置信号,13. The channel current control device according to claim 12, wherein the digital current setting signal formed by the highest p bits of the digital current setting signal is called a high-order digital current setting signal, 所述码转换单元被配置为基于所述高位数字电流设置信号的最高m位生成所述第一行控制信号和所述第二行控制信号,并且基于所述高位数字电流设置信号的剩余(p-m)位生成所述列控制信号。The code conversion unit is configured to generate the first row control signal and the second row control signal based on the highest m bits of the high-order digital current setting signal, and based on the remaining (p-m) of the high-order digital current setting signal ) bit generates the column control signal. 14.根据权利要求13所述的通道电流控制设备,其中,所述第一行控制信号的M位温度计码所表示的值等于所述高位数字电流设置信号的最高m位的二进制码表示的值;14. The channel current control device according to claim 13, wherein the value represented by the M-bit thermometer code of the first line control signal is equal to the value represented by the highest m-bit binary code of the high-order digital current setting signal ; 所述第二行控制信号的M位温度计码所表示的值等于所述高位数字电流设置信号的最高m位的二进制码表示的值加1;The value represented by the M-bit thermometer code of the second line control signal is equal to the value represented by the highest m-bit binary code of the high-order digital current setting signal plus 1; 所述列控制信号的K位温度计码所表示的值等于所述高位数字电流设置信号的剩余(p-m)位的二进制码表示的值。The value represented by the K-bit thermometer code of the column control signal is equal to the value represented by the binary code of the remaining (p-m) bits of the high-order digital current setting signal. 15.根据权利要求8至14中任一项所述的通道电流控制设备,其中,每个阵列单元被配置为实现如下控制逻辑以生成对应的电流镜控制信号:C||(A&B),其中C表示所述第一行控制信号,A表示所述第二行控制信号,B表示所述列控制信号。15. The channel current control device according to any one of claims 8 to 14, wherein each array unit is configured to implement the following control logic to generate a corresponding current mirror control signal: C||(A&B), where C represents the first row control signal, A represents the second row control signal, and B represents the column control signal. 16.一种用于mini LED背光源的通道电流控制方法,应用于如权利要求1至15中任一项所述的通道电流控制设备,该方法包括:16. A channel current control method for a mini LED backlight, applied to the channel current control device according to any one of claims 1 to 15, the method comprising: 通过所述控制单元向所述mini LED背光源中的每个mini LED通道提供对应的参考电压信号、脉冲宽度调制信号和数字电流设置信号;providing a corresponding reference voltage signal, a pulse width modulation signal and a digital current setting signal to each mini LED channel in the mini LED backlight through the control unit; 利用所述高压晶体管基于所述脉冲宽度调制信号对每个mini LED通道进行调光控制,Using the high-voltage transistor to perform dimming control on each mini LED channel based on the pulse width modulation signal, 利用所述恒流控制单元和所述低压晶体管基于所述参考电压信号、所述脉冲宽度调制信号和所述数字电流设置信号实现对所述mini LED通道的电流调节和恒流控制。Using the constant current control unit and the low voltage transistor to realize current regulation and constant current control of the mini LED channel based on the reference voltage signal, the pulse width modulation signal and the digital current setting signal. 17.根据权利要求16所述的通道电流控制方法,其中,所述恒流控制单元包括电流镜电路和解码器电路,所述电流镜电路包括输入侧晶体管、和并联连接的N个输出侧晶体管,所述方法还包括:17. The channel current control method according to claim 16, wherein the constant current control unit comprises a current mirror circuit and a decoder circuit, and the current mirror circuit comprises an input side transistor and N output side transistors connected in parallel , the method also includes: 利用所述解码器电路基于所述数字电流设置信号生成N个电流镜控制信号,分别用于控制所述N个输出侧晶体管中对应的输出侧晶体管的导通或关断,Using the decoder circuit to generate N current mirror control signals based on the digital current setting signal, which are respectively used to control the turn-on or turn-off of corresponding output-side transistors among the N output-side transistors, 其中,所述数字电流设置信号包括n位二进制码,并且所述N等于2的n次方。Wherein, the digital current setting signal includes an n-bit binary code, and the N is equal to 2 to the nth power. 18.根据权利要求17所述的通道电流控制方法,其中,所述参考电压信号通过第一运算放大器连接到所述输入侧晶体管的栅极,所述方法还包括:基于所述参考电压信号设定对应的mini LED通道的最大亮度电流。18. The channel current control method according to claim 17, wherein the reference voltage signal is connected to the gate of the input-side transistor through a first operational amplifier, and the method further comprises: setting Set the maximum brightness current of the corresponding mini LED channel. 19.根据权利要求16所述的通道电流控制方法,其中,所述低压晶体管包括并联的多个低压晶体管,所述方法还包括:基于所述脉冲宽度调制信号和所述数字电流设置信号的预定数目的高比特位来生成多个低压晶体管控制信号,分别用于控制所述多个低压晶体管中对应的低压晶体管的导通或关断。19. The channel current control method according to claim 16, wherein the low-voltage transistor comprises a plurality of low-voltage transistors connected in parallel, and the method further comprises: a predetermined value based on the pulse width modulation signal and the digital current setting signal The number of high bits is used to generate a plurality of low-voltage transistor control signals, which are respectively used to control the turn-on or turn-off of corresponding low-voltage transistors in the plurality of low-voltage transistors. 20.一种显示设备,包括mini LED背光源和如权利要求1至15中任一项所述的用于所述mini LED背光源的通道电流控制设备。20. A display device, comprising a mini LED backlight and the channel current control device for the mini LED backlight according to any one of claims 1 to 15.
CN202310391447.5A 2023-04-12 2023-04-12 Channel current control device and method for mini LED backlight source Pending CN116453471A (en)

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