CN116526986B - Self-adaptive capacitance anti-radiation radio frequency SOI power amplifier - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention provides an anti-irradiation radio frequency SOI power amplifier circuit structure of a self-adaptive capacitor, which belongs to the field of radio frequency integrated circuits and comprises a four-stack power amplifier, an irradiation detection control circuit and a switch capacitor array. The four-stack power amplifier comprises four-stack transistors, a bias resistor and a radio frequency choke inductor, the irradiation detection control circuit comprises an irradiation detection circuit and a threshold detector, and the switch capacitor array consists of the switch transistors and the capacitors. Due to the effect of the total dose irradiation, the performance of the transistor is reduced when irradiated, the performance of the power amplifier is also reduced, according to the invention, the self-adaptive switch capacitor array is added in the traditional four-stack power amplifier, so that the capacitor size is self-adaptively adjusted under the irradiation condition, and the power amplifier performance degradation caused by irradiation can be obviously improved. At the working frequency of 10 GHz, compared with the traditional four-stack power amplifier, the gain, the power additional efficiency and the saturated output power of the invention are obviously improved in the irradiation environment of 300 krad.
Description
Technical Field
The invention belongs to the field of radio frequency integrated circuits, and particularly relates to an anti-irradiation radio frequency SOI power amplifier of a self-adaptive capacitor.
Background
The exploration of aerospace brings wide development space for an aerospace communication system, and the aerospace communication technology is an important communication bridge for pushing human space exploration, however, the performance of the wireless transceiver system is easy to change in an irradiation environment when the wireless transceiver system faces various irradiation tests in space. The SOI technology is widely applied to various irradiation-resistant applications due to the excellent irradiation resistance performance, and has good application prospect in the process of fully integrating the system. In addition, the transistor stacking technology based on the SOI technology can make up for the defect of low withstand voltage value of a single transistor, thereby improving the output power of the power amplifier. Sataporn of san Diego division, calif. university designed a power amplifier with saturated output power of 1.74W and operating frequency of 1.9GHz based on 130nmSOI technology, and its circuit schematic is shown in FIG. 4. The conventional non-radiation-hardened power amplifier shown in fig. 4 may have performance reduced to some extent due to reduced carrier mobility, changed threshold voltage, etc. after receiving a certain dose of radiation. The radio frequency power amplifier serving as a core component of the wireless receiving and transmitting system has less research which can be referred to in the aspect of radiation reinforcement, and has great research significance in consideration of radiation resistance reinforcement of the radio frequency power amplifier.
Disclosure of Invention
The invention provides an anti-radiation radio frequency SOI power amplifier circuit structure of a self-adaptive capacitor, which is characterized in that an SOI technology is used, and the self-adaptive capacitor for resisting radiation is added to an RF SOI power amplifier, so that the anti-radiation reinforcement of the power amplifier is realized, and the problem of the degradation of the radiation performance of the power amplifier is effectively reduced.
The invention has the specific technical scheme that the self-adaptive capacitance anti-irradiation radio frequency SOI power amplifier comprises four stacked power amplifiers, an irradiation detection control circuit and a switch capacitor array. The four-stack power amplifier comprises four-stack transistors, a bias resistor and a radio frequency choke inductor, the irradiation detection control circuit comprises an irradiation detection circuit and a threshold detector, the switch capacitor array consists of the switch transistor and a capacitor, the grid electrodes of the four-stack transistors are respectively connected with the switch capacitor array and the bias resistor, the drain electrodes of the four-stack transistors are connected with the radio frequency choke inductor, the irradiation detection circuit is connected with the threshold detector, irradiation signals are detected and amplified through the irradiation detection circuit and are converted into control signals through the threshold detector, and the on and off of the switch capacitor array are controlled.
Further, the four-stack power amplifier comprises four-stack transistors, a bias resistor and a radio frequency choke inductor. The four stacked transistors comprise a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4, the bias resistor comprises a first resistor Rb1, a second resistor Rb2, a third resistor Rb3 and a fourth resistor Rb4, the radio frequency choke inductance is a first inductance RFC, and the switched capacitor array comprises a first switched capacitor array CA1, a second switched capacitor array CA2 and a third switched capacitor array CA3. The grid electrode of the first transistor M1 is connected with the signal input end RFin, meanwhile, the grid electrode of the first transistor M1 is connected with a first bias voltage Vb1 through a first resistor Rb1, the source electrode of the first transistor M1 is grounded, the drain electrode of the first transistor M1 is connected with the source electrode of the second transistor M2, the grid electrode of the second transistor M2 is connected with the ground through a first switch capacitor array CA1, meanwhile, the grid electrode of the second transistor M2 is connected with a second bias voltage Vb2 through a second resistor Rb2, the drain electrode of the second transistor M2 is connected with the source electrode of the third transistor M3, the grid electrode of the third transistor M3 is connected with the third bias voltage Vb3 through a third resistor Rb3, the drain electrode of the third transistor M3 is connected with the source electrode of the fourth transistor M4, the grid electrode of the fourth transistor M4 is connected with the ground through a third switch capacitor array CA3, the grid electrode of the fourth transistor M4 is connected with the fourth bias voltage Rb4 through the fourth resistor Rb4, and the drain electrode of the fourth transistor M4 is connected with the signal output end RFC via the fourth resistor RFC 4.
Further, the irradiance detection control circuit includes an irradiance detection circuit and a threshold detector. The irradiation detection circuit comprises a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5 and a sixth resistor R6, and the threshold detector comprises a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2 and a third threshold detector A3. The drain electrode and the grid electrode of the fifth transistor M5 are connected with a power supply, the source electrode of the fifth transistor M5 is connected with the grid electrode and the drain electrode of the sixth transistor M6, the source electrode of the sixth transistor M6 is connected with the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected with the power supply, the lower end of the sixth resistor R6 is connected with the drain electrode of the seventh transistor M7, the grid electrode of the seventh transistor M7 is connected with the upper end of the fifth resistor R5, the source electrode of the seventh transistor M7 is connected with the drain electrode and the grid electrode of the eighth transistor M8, the source electrode of the eighth transistor M8 is grounded, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 are sequentially connected in series, the upper end of the seventh resistor R7 is connected with the lower end of the sixth resistor R6, the lower end of the ninth resistor R9 is grounded, each threshold detector is composed of four inverters in series, the input of the first threshold detector A1 is connected with the upper end of the seventh resistor R7, the output of the first threshold detector A1 is a control signal SW1, the output of the first threshold detector A2 is connected with the upper end of the third threshold detector A3, the output of the third threshold detector A2 is connected with the upper end of the third threshold detector A2.
Further, the switched capacitor array is composed of a switching transistor and a capacitor. The first switched capacitor array CA1 includes a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12, and an eleventh transistor M13, the second switched capacitor array CA2 includes a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22, and a fourteenth transistor M23, and the third switched capacitor array CA3 includes a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32, and a seventeenth transistor M33. For the transistors in the switch capacitor array, the gates of the ninth transistor M11, the twelfth transistor M21 and the fifteenth transistor M31 are controlled by a first control signal SW1, the gates of the tenth transistor M12, the thirteenth transistor M22 and the sixteenth transistor M32 are controlled by a second control signal SW2, the gates of the eleventh transistor M13, the fourteenth transistor M23 and the seventeenth transistor M33 are controlled by a third control signal SW3, the upper ends of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32 and the twelfth capacitor C33 of the third switch capacitor array CA3 are connected to the gate of the fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, the lower end of the tenth capacitor C31 is grounded, the gate of the fifteenth transistor M31 is controlled by the first control signal SW1, the source of the eleventh capacitor C32 is grounded, the lower end of the sixteenth transistor M32 is grounded, the gate of the sixteenth transistor M32 is controlled by the third control signal SW3, the gate of the sixteenth transistor M32 is controlled by the second control signal SW2, the drain of the seventeenth transistor C33 is grounded, and the drain of the seventeenth transistor C33 is controlled by the drain of the third switch capacitor array CA 3.
Further, in the fourth stacked power amplifier, the static current flows from the power supply, through the first inductor RFC, into the drain of the fourth transistor M4, out of the source of the fourth transistor M4, into the drain of the third transistor M3, out of the source of the third transistor M3, into the drain of the second transistor M2, out of the source of the second transistor M2, into the drain of the first transistor M1, out of the source of the first transistor M1, and finally into the ground, and in the irradiation detection control circuit, the static current flows from the power supply, through two branches to the ground, respectively, the current in the first branch sequentially flows through the fifth transistor M5, the sixth transistor M6 and the fifth resistor R5 to the ground, the current in the second branch sequentially flows through the sixth resistor R6, one part sequentially flows through the seventh transistor M7, the eighth transistor M8 to the ground, and the other part sequentially flows through the seventh resistor R7, the eighth resistor R8 to the ground.
Further, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, and the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are NMOS transistors.
Further, the capacitance values of the first capacitor C10, the second capacitor C11, the third capacitor C12, the fourth capacitor C13, the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22, the eighth capacitor C23, the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32 and the twelfth capacitor C33 in each switched capacitor array are in a range of 1ff to 10nf.
Further, the resistance values of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3, the fourth resistor Rb4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 are in the range of 100deg.OMEGA-100deg.KOMEGA.
Further, the range of the first inductance RFC is 100 pH-100 nH.
The working principle is that the performance of the transistor is reduced when the radiation is irradiated due to the total dose radiation effect, and the carrier mobility, the threshold voltage and the like of the NMOS transistor are reduced to a certain extent. At this time, the currents of the fifth transistor M5, the sixth transistor M6 and the fifth resistor R5 branch in the radiation detection control circuit will decrease, resulting in a voltage drop of the source electrode of the sixth transistor M6, the voltage is amplified by the sixth resistor R6, the seventh transistor M7 and the eighth transistor M8 branch, the potential rising along with the total radiation dose is output from the drain electrode of the seventh transistor M7, and the potential rising along with the total radiation dose is obtained through the voltage division network composed of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9, and three potentials with different variation amplitudes are obtained, and respectively pass through the first threshold detector A1, the second threshold detector A2 and the third threshold detector A3, so as to obtain the first control signal SW1, the second control signal SW2 and the third control signal SW3. The total dose irradiation effect can reduce the performance of the four-stack power amplifier, and three control signals generated by the irradiation detection control circuit are changed from low level to high level under different irradiation doses, and the closing and opening of the corresponding capacitors are respectively controlled to correct the performance of the power amplifier. The irradiation sensitivity of the irradiation detection control circuit can be adjusted by adjusting the values of the fifth resistor R5 and the sixth resistor R6, and also can be adjusted by adjusting the values of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9. In addition, the irradiation resistance of the four-stack power amplifier can be improved to different degrees by adjusting the capacitance in the switch capacitor array.
The four-stack power amplifier has the beneficial effects that the power amplifier performance degradation caused by irradiation can be obviously improved by adding the self-adaptive switched capacitor array into the traditional four-stack power amplifier, and the traditional four-stack power amplifier has 2.4dB gain (S21) drop, 8% power additional efficiency PAE drop and 1.6dBm saturated output power Psat drop under the irradiation environment of 300krad at the working frequency of 10 GHz. The self-adaptive capacitance anti-radiation radio frequency SOI power amplifier provided by the invention can realize that the gain (S21) is not reduced, the power added efficiency PAE is reduced by 2%, the saturated output power Psat is only reduced by 0.5dBm under the irradiation of the total dose of 300krad, and has obvious improvement effect on the power amplifier performance degradation caused by irradiation.
Drawings
Fig. 1 is a block diagram of a circuit module adopting a radio frequency stacked power amplifier according to the present invention.
Fig. 2 is a circuit diagram showing connection between a switched capacitor array CAi (i is 1,2 or 3) and an irradiation detection control circuit according to the present invention.
Fig. 3 is a schematic diagram of an adaptive capacitor anti-radiation rf SOI power amplifier according to embodiment 1 of the present invention.
Fig. 4 is a circuit diagram of a conventional non-irradiation reinforced power amplifier in the prior art.
Fig. 5 shows the variation of gain (S21) with irradiation of a conventional non-irradiation reinforced power amplifier.
Fig. 6 shows the variation of the gain (S21) of the adaptive capacitance anti-radiation rf SOI power amplifier according to example 1 with radiation.
Fig. 7 shows the variation of saturated output power Psat and power added efficiency PAE of a conventional non-irradiated reinforcement power amplifier with irradiation.
Fig. 8 shows the variation of the radiation-resistant rf SOI power amplifier saturated output power Psat and the power added efficiency PAE of the adaptive capacitance according to the radiation of embodiment 1.
Detailed Description
The present invention will be further described with reference to the following specific embodiments in order to make the objects, technical solutions and advantages of the present invention more clear.
The following non-limiting example 1 will enable one of ordinary skill in the art to more fully understand the invention, but is not intended to limit the invention in any way.
Example 1
With reference to fig. 1 to 3, the embodiment provides an adaptive capacitance anti-radiation radio frequency SOI power amplifier, which comprises four stacked power amplifiers, an irradiation detection control circuit and a switched capacitor array. The four-stack power amplifier comprises four-stack transistors, a bias resistor, a radio frequency choke inductor, an input matching network and an output matching network, wherein the four-stack transistors comprise a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4, the bias resistor comprises a first resistor Rb1, a second resistor Rb2, a third resistor Rb3 and a fourth resistor Rb4, the radio frequency choke inductor is a first inductor RFC, the input matching network comprises a second inductor Lin and a thirteenth capacitor Cin, and the output matching network comprises a third inductor Lout and a fourteenth capacitor Cout. The radiation detection control circuit includes a radiation detection circuit and a threshold detector. The irradiation detection circuit comprises a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5 and a sixth resistor R6, and the threshold detector comprises a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2 and a third threshold detector A3, wherein each threshold detector consists of four inverters which are connected in series. The switch capacitor array is composed of a switch transistor and a capacitor, the first switch capacitor array CA1 comprises a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12 and an eleventh transistor M13, the second switch capacitor array CA2 comprises a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22 and a fourteenth transistor M23, and the third switch capacitor array CA3 comprises a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32 and a seventeenth transistor M33.
The circuit structure is shown in figure 3. For a four-stack power amplifier, a gate of a first transistor M1 is connected with a signal input end RFin through an input matching network, meanwhile, the gate of the first transistor M1 is connected with a first bias voltage Vb1 through a first resistor Rb1, a source of the first transistor M1 is grounded, a drain of the first transistor M1 is connected with a source of a second transistor M2, the gate of the second transistor M2 is connected with the ground through a first switch capacitor array CA1, meanwhile, the gate of the second transistor M2 is connected with a second bias voltage Vb2 through a second resistor Rb2, the drain of the second transistor M2 is connected with a source of a third transistor M3, the gate of the third transistor M3 is connected with a third bias voltage Vb3 through a third resistor Rb3, the drain of the third transistor M3 is connected with a source of a fourth transistor M4, the gate of the fourth transistor M4 is connected with the ground through a third switch capacitor array CA3, meanwhile, the gate of the fourth transistor M4 is connected with a fourth bias voltage Rb4 through a fourth resistor Rb4, and the fourth bias voltage is connected with an RFout through a fourth resistor Rb4, and the RFC is connected with a signal output end of the fourth transistor is connected with the RFC. For the irradiation detection control circuit, the drain and gate of the fifth transistor M5 are connected with the power supply, the source of the fifth transistor M5 is connected with the gate and drain of the sixth transistor M6, the source of the sixth transistor M6 is connected with the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected with the power supply, the lower end of the sixth resistor R6 is connected with the drain of the seventh transistor M7, the gate of the seventh transistor M7 is connected with the upper end of the fifth resistor R5, the source of the seventh transistor M7 is connected with the drain and gate of the eighth transistor M8, the source of the eighth transistor M8 is grounded, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 are sequentially connected in series, the upper end of the seventh resistor R7 is connected with the lower end of the sixth resistor R6, the lower end of the ninth resistor R9 is grounded, each threshold detector is connected with four inverters in series, and the switch capacitor array CAi is 1, 2 or 3) is specifically connected with the irradiation detection control circuit, as shown in fig. 2, the input of the first threshold detector A1 is connected with the upper end of the seventh resistor R7, the output of the first threshold detector A1 is the first control signal SW1, the input of the second threshold detector A2 is connected with the upper end of the eighth resistor R8, the output of the second threshold detector A2 is the second control signal SW2, the input of the third threshold detector A3 is connected with the upper end of the ninth resistor R9, and the output of the third threshold detector A3 is the third control signal SW3. For the switched capacitor array, the first, second and third switched capacitor arrays CA1, CA2 and CA3 have the same circuit structure, and the third switched capacitor array CA3 is taken as an example, and the ninth capacitor C30, the tenth capacitor C31 and the eleventh capacitor C32, The upper end of the twelfth capacitor C33 is connected to the grid electrode of the fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, the lower end of the tenth capacitor C31 is connected to the drain electrode of the fifteenth transistor M31, the grid electrode of the fifteenth transistor M31 is controlled by the first control signal SW1, the source electrode of the fifteenth transistor M31 is grounded, the lower end of the eleventh capacitor C32 is connected to the drain electrode of the sixteenth transistor M32, the grid electrode of the sixteenth transistor M32 is controlled by the second control signal SW2, the source electrode of the sixteenth transistor M32 is grounded, the lower end of the twelfth capacitor C33 is connected to the drain electrode of the seventeenth transistor M33, the grid electrode of the seventeenth transistor M33 is controlled by the third control signal SW3, the source electrode of the seventeenth transistor M33 is grounded, and especially the ninth transistor M11, The gates of the twelfth transistor M21, the fifteenth transistor M31 are controlled by the first control signal SW1, the gates of the tenth transistor M12, the thirteenth transistor M22, the sixteenth transistor M32 are controlled by the second control signal SW2, and the gates of the eleventh transistor M13, the fourteenth transistor M23, the seventeenth transistor M33 are controlled by the third control signal SW 3. The input matching network comprises a second inductor Lin and a thirteenth capacitor Cin, one end of the thirteenth capacitor Cin is connected with the signal output end RFin, and meanwhile, the input matching network is grounded through the second inductor Lin, and the other end of the thirteenth capacitor Cin is connected with the grid electrode of the first transistor M1. The output matching network includes a third inductor Lout and a fourteenth capacitor Cout, one end of the fourteenth capacitor Cout is connected to the signal output terminal RFout, and is grounded through the third inductor Lout, and the other end of the fourteenth capacitor Cout is connected to the drain electrode of the fourth transistor M4.
In the fourth stacked power amplifier part, the trend of the static current starts from a power supply, flows into the drain electrode of the fourth transistor M4 through the first inductor RFC, flows out of the source electrode of the fourth transistor M4, flows into the drain electrode of the third transistor M3, flows out of the source electrode of the third transistor M3, flows into the drain electrode of the second transistor M2, flows out of the source electrode of the second transistor M2, flows into the drain electrode of the first transistor M1, flows out of the source electrode of the first transistor M1 and finally flows into the ground, and in the irradiation detection control circuit, the trend of the static current starts from the power supply, flows into the ground through two branches respectively, the current in the first branch sequentially flows through the fifth transistor M5, the sixth transistor M6 and the fifth resistor R5 to the ground, one part sequentially flows through the seventh transistor M7, the eighth transistor M8 to the ground, and the other part sequentially flows through the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 to the ground.
In the four-stack power amplifier, the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 are NMOS, the gate length L is 120nm, the gate width W is 1536um, the inductance value of the first inductor RFC is 10nH, the values of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3 and the fourth resistor Rb4 are 10kΩ, the value of the second inductor Lin is 144pH, the value of the thirteenth capacitor Cin is 8.5pF, the value of the third inductor Lout is 450pH, and the value of the fourteenth capacitor Cout is 1.83pF in the output matching network. In the irradiation detection control circuit, the fifth transistor M5 and the sixth transistor M6 are NMOS, the gate length L is 120nm, the gate width W is 160nm, the seventh transistor M7 and the eighth transistor M8 are NMOS, the gate length L is 120nm, the gate width W is 800nm, the resistance values of the fifth resistor R5 and the sixth resistor R6 are 10kΩ, and the resistance values of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 are 17kΩ, 14.3kΩ and 68.7kΩ respectively. In the switched capacitor array, the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are all NMOS, the gate length L is 220nm, the gate width W is 16um, the values of the first capacitor C10, the second capacitor C11, the third capacitor C12, and the fourth capacitor C13 are 2.16pF, 1.08pF, 1.2pF, and 1.2pF, respectively, in the second switched capacitor array CA2, the values of the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22, and the eighth capacitor C23 are 540fF, 60fF, 144fF, and 240fF, respectively, and in the third switched capacitor array CA3, the values of the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32, the twelfth capacitor C33, and the 60fF 3f, and the 60fF, respectively.
The working principle is that the performance of the transistor is reduced when the radiation is irradiated due to the total dose radiation effect, and the carrier mobility, the threshold voltage and the like of the NMOS transistor are reduced to a certain extent. At this time, the currents of the fifth transistor M5, the sixth transistor M6 and the fifth resistor R5 branch in the radiation detection control circuit will decrease, resulting in a voltage drop of the source electrode of the sixth transistor M6, the voltage is amplified by the sixth resistor R6, the seventh transistor M7 and the eighth transistor M8 branch, the potential rising along with the total radiation dose is output from the drain electrode of the seventh transistor M7, and the potential rising along with the total radiation dose is obtained through the voltage division network composed of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9, and three potentials with different variation amplitudes are obtained, and respectively pass through the first threshold detector A1, the second threshold detector A2 and the third threshold detector A3, so as to obtain the first control signal SW1, the second control signal SW2 and the third control signal SW3. The total dose irradiation effect can reduce the performance of the four-stack power amplifier, and three control signals generated by the irradiation detection control circuit are changed from low level to high level under different irradiation doses, and the closing and opening of the corresponding capacitors are respectively controlled to correct the performance of the power amplifier. The irradiation sensitivity of the irradiation detection control circuit can be adjusted by adjusting the values of the fifth resistor R5 and the sixth resistor R6, and also can be adjusted by adjusting the values of the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9. In addition, the irradiation resistance of the four-stack power amplifier can be improved to different degrees by adjusting the capacitance in the switch capacitor array.
According to the graph of gain versus irradiance shown in fig. 5, the gain of a conventional four stack power amplifier (S21) decreases with irradiance by 2.4dB at 10GHz with a total dose of 300 krad.
Fig. 6 is a graph showing the variation of the gain of the radiation-resistant radio-frequency SOI power amplifier using the adaptive capacitor according to the present embodiment along with the radiation, and it can be seen that the graph is significantly more compact, and the gain (S21) at 10GHz is not reduced under the total dose radiation condition of 300 krad.
Fig. 7 shows a graph of saturated output power Psat and power added efficiency PAE of a conventional four-stack power amplifier as a function of irradiation. At a total dose of 300krad the saturated output power Psat drops by 1.6dBm and the power added efficiency PAE drops by approximately 8%.
The irradiation-dependent curves of the saturated output power Psat and the power added efficiency PAE of the irradiation-resistant radio-frequency SOI power amplifier with the adaptive capacitor obtained in the embodiment of fig. 8 show that the saturated output power Psat is only reduced by 0.5dBm and the power added efficiency PAE is only reduced by 2% under the irradiation condition of the total dose of 300krad, which is obviously improved compared with the traditional four-stack power amplifier.
Claims (6)
1. The self-adaptive capacitance anti-radiation radio frequency SOI power amplifier is characterized by comprising a four-stack power amplifier, an irradiation detection control circuit and a switch capacitance array, wherein the four-stack power amplifier comprises four-stack transistors, a bias resistor and a radio frequency choke inductor, the irradiation detection control circuit comprises an irradiation detection circuit and a threshold detector, the switch capacitance array consists of a plurality of switch transistors and a plurality of capacitors, the grid electrode of the four-stack transistors is respectively connected with the switch capacitance array and the bias resistor, the drain electrode of the four-stack transistors is connected with the radio frequency choke inductor, the irradiation detection circuit is connected with the threshold detector, an irradiation signal is detected and amplified by the irradiation detection circuit and is converted into a control signal by the threshold detector, and the on and off of the switch capacitance array are controlled;
The four stack transistors comprise a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4, wherein the bias resistor comprises a first resistor Rb1, a second resistor Rb2, a third resistor Rb3 and a fourth resistor Rb4, the radio frequency choke inductor is a first inductor RFC, the switch capacitor array comprises a first switch capacitor array CA1, a second switch capacitor array CA2 and a third switch capacitor array CA3, the grid electrode of the first transistor M1 is connected with a signal input end RFin, the grid electrode of the first transistor M1 is connected with a first bias voltage Vb1 through the first resistor Rb1, the source electrode of the first transistor M1 is grounded, the drain electrode of the first transistor M1 is connected with the source electrode of the second transistor M2 through the first switch capacitor array CA1, the grid electrode of the second transistor M2 is connected with a second bias voltage Vb2 through the second resistor Rb2, the drain electrode of the second transistor M2 is connected with the third transistor M3, the grid electrode of the third transistor M3 is connected with the fourth transistor M4 through the second resistor Rb3, and the grid electrode of the fourth transistor M4 is connected with the fourth bias voltage Cb3 through the fourth resistor Rb4, and the grid electrode of the fourth transistor M4 is connected with the fourth bias voltage;
The irradiation detection circuit comprises a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a fifth resistor R5 and a sixth resistor R6, wherein the threshold detector comprises a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a first threshold detector A1, a second threshold detector A2 and a third threshold detector A3, the drain electrode and the grid electrode of the fifth transistor M5 are connected with a power supply, the source electrode of the fifth transistor M5 is connected with the grid electrode and the drain electrode of the sixth transistor M6, the source electrode of the sixth transistor M6 is connected with the upper end of the fifth resistor R5, the lower end of the fifth resistor R5 is grounded, the upper end of the sixth resistor R6 is connected with the drain electrode of the seventh transistor M7, the grid electrode of the seventh transistor M7 is connected with the upper end of the fifth resistor R5, the source electrode of the seventh transistor M7 is connected with the drain electrode and the grid electrode of the eighth transistor M8, the source electrode of the eighth transistor M8 is grounded, the source electrode of the seventh transistor M8 is connected with the upper end of the seventh resistor R9, the seventh threshold detector A2 is connected with the upper end of the seventh resistor A3, the first threshold detector A2 is connected with the upper end of the seventh threshold detector A2, the signal SW2 is connected with the upper end of the seventh threshold detector A2 in series, the output signal SW2 is connected with the upper end of the seventh threshold detector A2;
The first switched capacitor array CA1 includes a first capacitor C10, a second capacitor C11, a third capacitor C12, a fourth capacitor C13, a ninth transistor M11, a tenth transistor M12, and an eleventh transistor M13; the second switched capacitor array CA2 includes a fifth capacitor C20, a sixth capacitor C21, a seventh capacitor C22, an eighth capacitor C23, a twelfth transistor M21, a thirteenth transistor M22, a fourteenth transistor M23, and the third switched capacitor array CA3 includes a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32, a twelfth capacitor C33, a fifteenth transistor M31, a sixteenth transistor M32, a seventeenth transistor M33; for the transistors in the switch capacitor array, the gates of the ninth transistor M11, the twelfth transistor M21 and the fifteenth transistor M31 are controlled by a first control signal SW1, the gates of the tenth transistor M12, the thirteenth transistor M22 and the sixteenth transistor M32 are controlled by a second control signal SW2, the gates of the eleventh transistor M13, the fourteenth transistor M23 and the seventeenth transistor M33 are controlled by a third control signal SW3, the upper ends of a ninth capacitor C30, a tenth capacitor C31, an eleventh capacitor C32 and a twelfth capacitor C33 of the third switch capacitor array CA3 are connected to the gate of a fourth transistor M4, the lower end of the ninth capacitor C30 is grounded, the lower end of the tenth capacitor C31 is grounded, the gate of the fifteenth transistor M31 is controlled by the first control signal SW1, the source of the eleventh capacitor C32 is grounded, the lower end of the sixteenth transistor M32 is grounded, the gate of the sixteenth transistor M32 is controlled by the second control signal SW2, the drain of the seventeenth transistor M33 is grounded, the drain of the seventeenth transistor M33 is controlled by the control signal SW3, the source of the seventeenth transistor M33 is grounded, and the first switched capacitor array CA1, the second switched capacitor array CA2, and the third switched capacitor array CA3 have the same circuit structure.
2. The adaptive capacitance anti-radiation radio frequency SOI power amplifier according to claim 1, wherein in the four-stack power amplifier, the static current starts from a power supply, flows into a drain electrode of a fourth transistor M4 through a first inductor RFC, flows out of a source electrode of the fourth transistor M4, flows into a drain electrode of a third transistor M3, flows out of a source electrode of the third transistor M3, flows into a drain electrode of a second transistor M2, flows out of a source electrode of the second transistor M2, flows into a drain electrode of a first transistor M1, flows out of a source electrode of the first transistor M1, and finally flows into ground, and in the radiation detection control circuit, the static current starts from the power supply, respectively flows to ground through two branches, the current in the first branch sequentially flows through a fifth transistor M5, a sixth transistor M6 and a fifth resistor R5 to ground, the current in the second branch sequentially flows through a seventh transistor M7, an eighth transistor M8 to ground, and the other part sequentially flows through a seventh resistor R7, an eighth resistor R8 to a ninth resistor R9.
3. The adaptive capacitance radio frequency SOI power amplifier according to claim 2, wherein the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the ninth transistor M11, the tenth transistor M12, the eleventh transistor M13, the twelfth transistor M21, the thirteenth transistor M22, the fourteenth transistor M23, the fifteenth transistor M31, the sixteenth transistor M32, and the seventeenth transistor M33 are NMOS transistors.
4. The adaptive capacitance anti-radiation radio frequency SOI power amplifier as set forth in claim 3, wherein the capacitance values of the first capacitor C10, the second capacitor C11, the third capacitor C12, the fourth capacitor C13, the fifth capacitor C20, the sixth capacitor C21, the seventh capacitor C22, the eighth capacitor C23, the ninth capacitor C30, the tenth capacitor C31, the eleventh capacitor C32 and the twelfth capacitor C33 in each switch capacitor array are 1 fF-10 nF.
5. The adaptive capacitance anti-radiation radio frequency SOI power amplifier according to claim 4, wherein the resistance values of the first resistor Rb1, the second resistor Rb2, the third resistor Rb3, the fourth resistor Rb4, the fifth resistor R5, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 are in the range of 100 Ω -100 kΩ.
6. The adaptive capacitance anti-radiation radio frequency SOI power amplifier of claim 4, wherein the range of the first inductor RFC is 100pH to 100nH.
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