CN116698271A - Waterproof pressure sensor device with improved temperature calibration and corresponding temperature calibration method - Google Patents

Abstract

A waterproof pressure sensor device with improved temperature calibration and a corresponding temperature calibration method are disclosed. A pressure sensor device having: a pressure sensing structure fabricated in a first die of semiconductor material; a package configured to contain the pressure sensing structure inside in an impermeable manner, the package having a base structure and a body structure arranged on the base structure, having an access opening in contact with the external environment and internally defining a housing cavity, the first die is arranged in the housing cavity, and in the housing cavity The first die is covered with a coating material. The pressure sensor device is also provided with a heating structure accommodated in the housing cavity and allowing heating of the pressure sensing structure from inside the package.

Description

Waterproof pressure sensor device with improved temperature calibration and corresponding temperature calibration method

technical field

The present disclosure relates to a waterproof pressure sensor device and temperature calibration method with improved temperature calibration.

Background technique

Water-resistant or impermeable (so-called "waterproof") microelectromechanical (MEMS - microelectromechanical systems) pressure sensor devices are known.

For example, these pressure sensor devices can be used in portable or wearable electronic devices, such as smartphones, smart bracelets or smart watches, which can be used in underwater applications or in water in general.

The aforementioned pressure sensor devices typically comprise a sensing structure provided with a membrane suspended above the chamber and in which a sensing element, such as a piezoresistor, is arranged to detect deformations caused by shock pressure waves.

The detection structure is integrated within the package, usually together with corresponding signal reading and processing electronics, provided as an ASIC (Application Specific Integrated Circuit), which provides at the output a pressure signal indicative of the detected pressure.

The aforementioned enclosure has an access port allowing the detection of external pressure and internally defines a housing cavity housing the aforementioned sensing structure and associated ASIC.

Typically, this housing cavity is filled with a protective coating, such as a polymer or silicone type, such as a coating gel (so-called "potting gel"), which coats and protects the detection structure and the ASIC from moisture and usually Effects of contamination from outside the package. Only this protective material is in contact with the external environment, effectively making the housing cavity (filled with the same protective material) impermeable or sealed.

In a known manner, the electrical testing procedure of a pressure sensor device, in particular at the end of the respective manufacturing process, consists in performing a number of pressure measurements at different temperature values in order to calibrate the response of the same pressure sensor device when the temperature varies (e.g. , in order to adapt, as a function of temperature, to the pressure signal provided at the output during subsequent normal operation).

These testing procedures typically envisage the use of external testing equipment provided with measuring probes and configured to regulate the temperature of the testing chamber in which the pressure sensor arrangement is arranged in order to vary its temperature and acquire corresponding calibration pressure signals. For example, the pressure signal at the output of the pressure sensor device may be obtained at the following different calibrated temperature values (or set points): 10°C, 42.5°C and 70°C.

A suitable temperature sensor can be integrated in the pressure sensor device in order to enable a feedback control of the temperature reached by the same pressure sensor device during the calibration phase.

One issue affecting this testing procedure relates to the fact that the above-mentioned protective coating within the enclosure of the pressure sensor device is thermally insulating due to the reduced thermal conductivity of the material from which it is made.

Therefore, in the above test process, it usually takes a long time to wait until the required calibration temperature value is reached; specifically, these waiting times may even be on the order of tens of seconds.

For example, Figure 1 shows the test temperature trend during calibration, considering several different pressure sensor setups for electrical testing.

This Figure 1 shows the ramps required for the temperature to stabilize around the calibrated value; for example, considering the pressure sensor setup tested, these ramps (indicated by "Ramp1", "Ramp2" and "Ramp3") have the following average durations: from The ramp (Ramp1) from 25°C to 10°C takes about 30 seconds; the ramp (Ramp2) from 10°C to 42.5°C takes about 50 seconds; the ramp (Ramp3) from 42.5°C to 70°C takes about 30 seconds.

In particular, the time delay mainly occurs around the calibration value when a reduction in the thermal gradient between the measurement chamber and the interior of the pressure sensor device determines a reduction in the heat transfer rate and the subsequent latency to reach the calibration value.

These waiting times typically require a considerable overall duration of the electrical procedure to test the pressure sensor device.

Furthermore, the circuitry required in the external test equipment to control and regulate the calibration temperature of the pressure sensor arrangement is rather complex.

Contents of the invention

In general, the present disclosure aims to overcome the previously highlighted disadvantages of known solutions.

According to the present disclosure, a pressure sensor device and a corresponding calibration method are thus provided.

At least one embodiment of a pressure sensor device of the present disclosure may be generalized to include a pressure sensing structure disposed in a first die of semiconductor material; a package configured to house said pressure sensing structure internally in an impermeable manner, The package includes a base structure and a body structure arranged on the base structure, having access to the external environment and internally defining a housing cavity, wherein the first die is arranged to cover There is a coating material, and a heating structure housed in the housing cavity, the heating structure configured to allow heating of the pressure sensing structure from within the enclosure.

Description of drawings

For a better understanding of the present disclosure, embodiments thereof will now be described, by way of non-limiting examples only, with reference to the accompanying drawings, in which:

Figure 1 shows an exemplary trend of calibration temperature during an electrical testing process of a pressure sensor device;

Fig. 2 shows a schematic cross-section of a pressure sensor device according to an embodiment of the present disclosure;

Fig. 3 shows a schematic plan view of the pressure detection structure of the pressure sensor device of Fig. 2 with an associated heating structure;

4 is a schematic block diagram of a test system for a pressure sensor device; and

5 and 6 are flowcharts of the electrical testing process of the pressure sensor device.

Detailed ways

Figure 2 shows a pressure sensor arrangement 1 comprising a pressure sensing structure 2 arranged in a first die 4 of semiconductor material, in particular silicon.

The first die 4 has a top or first surface 4a and a bottom or second surface 4b extending parallel to a horizontal plane xy and facing each other along a vertical axis z normal to said horizontal plane xy.

The pressure sensing structure 2 comprises a membrane 6 provided at the top surface 4a, arranged above the cavity 7, embedded in the die 4; in other words, the membrane 6 is inserted into the cavity 7 below and the aforementioned top surface of the first die 4 between 4a.

A detection element 8, in particular a piezoresistor, is arranged in the membrane 6 and is configured to allow detection of deformations of the membrane 6 due to shock pressure waves.

The pressure sensor device 1 also comprises a processing circuit 10, implemented as an ASIC, integrated in a second die 12 of semiconductor material, in particular silicon, having a respective top or first surface 12a and a respective bottom or second surface 12b.

In the illustrated embodiment, the aforementioned first die 4 and second die 12 are arranged in a stack, wherein the top surface 12a of the second die 12 is coupled to the bottom surface 4b of the first die 4 via the first bonding area 13 .

A first bond wire 15 electrically connects a first pad 16 carried by the top surface 4a of the first die 4 to a corresponding second pad 17 carried by the top surface 12a of the second die 12 to allow the pressure sensing structure 2 (and the corresponding detection element 8) and the electrical connection between the processing circuit 10.

In particular, the processing circuit 10 is configured to generate an output pressure signal indicative of the pressure impinging on the membrane 6 from the electrical signal provided by the detection element 8 .

The pressure sensor device 1 also comprises a waterproof enclosure 20 configured to house the aforementioned stack formed by the pressure sensing structure 2 and the associated processing circuit 10 inside in an impermeable or airtight manner.

The package 20 includes a base structure 21 and a body structure 22, the body structure 22 is arranged on the base structure 21 and has a cup shape, and defines a housing cavity 23 inside, and the pressure detection structure 2 and the processing circuit 10 are arranged in the housing cavity 23 .

The bottom surface 12 b of the second die 12 is connected to the inner surface 21 a of the base structure 21 facing the aforementioned housing cavity 23 through a second bonding region 24 .

A second bond wire 25 electrically connects a third pad 26 carried by the top surface 12a of the second die 12 to a corresponding fourth pad 27 carried by the inner surface 21a of the base structure 21 to allow handling of the circuit 10 and packaging The electrical connection between the exterior of the piece 20.

To this end, conductive vias 28 pass through the entire thickness of the base structure 21 and connect the aforementioned fourth pad 27 to an external connection element 29, for example in the form of a corresponding pad (as shown in the example) or a conductive bump. Provided in the form of blocks, carried by the outer surface 21b of the same base structure 21, placed in contact with the external environment.

In a manner not shown, these external connection elements 29 can be contacted from outside the enclosure 20, for example by a control unit of the electronics in which the pressure sensor arrangement 1 is incorporated, or, as will be discussed in detail below, by electrical test equipment.

The body structure 22 has an upward (at the end opposite to the base structure 21 ) access port 30 for allowing the pressure wave to be detected to be introduced into the package 20 .

The protective coating 32 almost completely fills the aforementioned housing cavity 23 and completely covers and coats the aforementioned stack formed by the pressure sensing structure 2 and associated processing circuitry 10 to ensure its protection from water (or generally from the external environment). Contaminants); the protective coating 32 is in particular a coating gel (potting gel), for example a polymer or silicone gel.

According to an aspect of the present disclosure, the pressure sensor device 1 further comprises a heating structure 40 integrated in the same first die 4 (schematically shown in FIG. 2 ), the heating structure 40 is configured to allow The pressure detection structure 2 is heated inside the package 20 .

In detail and with reference also to FIG. 3 (showing by way of example the aforementioned membrane 6 with a cross-shaped arrangement of four detection elements 8 ), the heating structure 40 comprises a plurality of resistive elements 42 arranged at the first die 4 at the top surface 4a, close to the membrane 6.

Such a resistive element 42 is for example made of a corresponding area of polysilicon (or other suitable material) formed laterally and externally with respect to the membrane 6 on the top surface 4 a of the first die 4 .

In the example shown, the membrane 6 is substantially square in the horizontal plane xy, and the aforementioned resistive elements 42 are arranged in two groups, respectively aligned with first and second sides of the same membrane 6 opposite to each other.

These resistive elements 42 are electrically connected in parallel to each other by a first conductive track 43 a and a second conductive track 43 b also arranged on the same top surface 4 a of the first die 4 . Specifically, the first conductive track 43a connects the first ends of the aforementioned resistive elements 42 to each other and to the first pad 44a formed on the aforementioned top surface 4a; the second conductive track 43b connects the second ends of the aforementioned resistive elements 42 to each other. are connected to each other and to the second pad 44b.

During operation, the first pad 44a is for example set to supply potential (Val) and the second pad 44b is set to reference potential (ground, GND), so that a heating current flows through the aforementioned resistive element 42, causing it to heat up, and This results in a temperature change of adjacent pressure detection structures 2 .

Advantageously, the parallel connection of the resistive elements 42 allows obtaining a low resistance to the flow of the aforementioned heating current, thereby reducing the electrical consumption associated with the aforementioned heating.

For example, in the illustrated embodiment, the aforementioned heating structure 40 comprises 24 resistive elements 42 connected in parallel to each other, each resistive element being provided with a polysilicon region having a width equal to 6 μm and a length equal to 21 μm, so as to form a total resistance having a value of 10 Ω ( Consider that the resistivity of polysilicon is equal to 725Ω/sq).

Furthermore, the pressure sensor device 1 also comprises a further pad 45 electrically connected (in a manner not shown) to the detection element 8 arranged in the membrane 6 to allow detection of deformations of the same membrane 6 .

Furthermore, the pressure sensor arrangement 1 comprises at least one temperature sensor 46 (shown schematically in the same figure 3 ), which is also integrated in the first die 4 , in the example close to the membrane 6 , for allowing Detect the temperature of the pressure detection structure 2 . To this end, the aforementioned temperature sensors 46 are electrically connected (in a manner not shown) to respective pads 47 also formed on the top surface 4 a of the first die 4 .

In a manner not shown in detail, respective first bonding wires 15 may electrically connect the first pad 44a and the second pad 44b and the further pads 45 and 47 to the processing circuitry integrated in the second die 12 10.

In a possible embodiment, as schematically shown in FIG. 2 above, the processing circuit 10 may include a temperature regulation module 48 integrated in the second die 12 and configured based on the above-mentioned The feedback control of the temperature reached by the pressure detection structure 2 detected by the temperature sensor 46 controls the supply of the aforementioned heating current to the heating structure 40 , in particular during the testing and temperature calibration process of the pressure sensor device 1 .

In an alternative embodiment (not shown here), bonding wires may directly connect the aforementioned first pad 44a and second pad 44b to a corresponding fourth pad 27 carried by the inner surface 21a of the base structure 21 to provide Electrical connection towards the outside of the package 20 is allowed. In this case, the adjustment of the temperature of the pressure detection structure 2 by the heating structure 40 can be entrusted to an electronic device outside the pressure sensor device 1 .

Tests carried out by the applicant have shown a high response speed of the heating structure 40, for example being able to raise the temperature of the pressure detection structure 2 from 20°C to 50°C in only 150 ms, resulting in a heating rate of 200°C/s (while Not the heating rate of 4°C/s obtainable from external heating of the pressure sensor device 1 by external testing equipment).

Thus, during electrical testing and temperature calibration of the pressure sensor device 1 , the aforementioned heating structure 40 may be operated to heat the pressure detection structure 2 from inside the package 20 of the pressure sensor device 1 .

In particular, the aforementioned heating structure 40 can induce such heating either exclusively (ie without any intervention of the external testing device) or in cooperation with the external testing device.

In this regard, FIG. 4 schematically shows an electrical test system 49 comprising a test chamber 49a and test equipment 49b arranged in the test chamber 49a and configured to perform pressure sensor The testing and calibration process of the device 1, especially the acquisition of pressure signals at different calibration temperature values.

Referring to Fig. 5, a first test and temperature calibration process is now described, in which the regulation of the temperature of the pressure sensor arrangement 1 is entrusted exclusively to the sole heating structure 40 (ie without the intervention of the aforementioned test device 49b).

Specifically, in an initial step 50, the temperature of the aforementioned test chamber 49a housing the pressure sensor device 1 during the test is set to a temperature lower than the first calibration temperature value, for example equal to 5°C.

Subsequently, in step 51, a new temperature set point is iteratively established for the calibration of the pressure sensor device 1 (in particular, in the case of the first iteration of the process, the first temperature set point is for example equal to 10° C. ).

Then, in step 52 , internal heating of the same pressure sensor device 1 is effected by having the corresponding heating structure 40 supplied with a heating current.

Then, at step 53, it is verified that reaching the established temperature set point has reached within a first temperature range, such as an example ±5°C around the aforementioned set point (it should be noted that this verification can be based on information provided by the temperature sensor 46).

If the verification is affirmative, at step 54 , the heating current supplied to the heating structure 40 is feedback-controlled, for example by the aforementioned temperature regulation module 48 inside the processing circuit 10 , so as to reach a stable temperature of the same heating structure 40 .

Specifically, at step 55, it is verified that the established temperature set point is stable within a second temperature range lower than the aforementioned first temperature range, for example ±0.2°C around the established set point.

In case the verification is positive, at step 56 it is determined that the set point has been reached and eg acquisition and storage of a corresponding calibration value of the pressure signal provided at the output of the pressure sensor device 1 is effected.

The process can then be carried out iteratively (returning to the aforementioned step 51 ), with new temperature setpoints being set, for example with a value higher than the previous one, until the calibration of the pressure sensor device 1 is completed.

As an alternative to what has been shown, the heating of the pressure detection structure 2 can be realized by the combination and cooperation of the aforementioned heating structure 40 inside the pressure sensor device 1 and the testing device 49b outside the same pressure sensor device 1 .

Referring to Figure 6, in this case, in an initial step 60, new temperature setpoints are iteratively established for the calibration of the pressure sensor device 1 (in the case of the first iteration of the process, in particular - temperature set point).

Then, at step 61 , the test apparatus 49b is operated to externally heat the pressure detection structure 2 of the pressure sensor device 1 by heat conduction.

Specifically, as shown in step 62, the controller (for example, a PID proportional-integral-derivative controller) of the test device 49b regulates the heating/cooling of the pressure sensor device 1 (for example, using the temperature sensor 46 internally controlled by the same pressure sensor device 1 information provided as feedback).

Then, at step 63, it is verified by the same controller whether the established temperature set point has reached within a third temperature range (it should be noted that the third temperature range is between the aforementioned first and second temperature ranges), such as the aforementioned ±0.5°C around set point.

After the affirmative verification, at step 64 the same controller proceeds to a new verification to verify that the temperature is stable within the aforementioned second temperature range around the established set point (eg ±0.2°C).

In case the verification is positive, at step 65 it is determined that the set point has been reached and a calibration procedure is carried out, for example by acquiring and storing the corresponding value of the pressure signal provided at the output of the pressure sensor device 1 .

In this case, in parallel with the temperature regulation action carried out by the testing device 49b, once it is verified at step 66 that the established temperature set point has reached within the aforementioned first temperature range (e.g. ±5°C), at step 67 also by Supplying a heating current activates the corresponding heating structure 40 to enable internal heating of the same pressure sensor device 1 .

It should be noted, therefore, that this internal heating works in conjunction with the heating from the outside implemented by the testing device 49b, thereby speeding up the attainment of the established temperature set point.

Specifically, as shown in step 68 , for example, the heating current supplied to the heating structure 40 is feedback-controlled through the above-mentioned temperature adjustment module 48 inside the processing circuit 10 to achieve a stable temperature of the same heating structure 40 .

Once it is verified at step 69 that the temperature is stable within a second temperature range around the established set point, it is determined that the set point has been reached and acquisition of a calibration signal (as previously described at step 65) is performed.

The process can then be carried out iteratively, establishing (at step 60 ) a new temperature set point, for example with a value higher than the previous value, until the calibration of the pressure sensor device 1 is completed.

The advantages provided by the present disclosure are apparent from the foregoing description.

In any case, it is emphasized that the integration of the heating structure 40 within the pressure sensor device 1 allows to significantly reduce the time required for the electrical testing process of the same pressure sensor device 1 and also reduces the complexity of the test equipment 49b .

The presence of this heating structure 40 allows the temperature of each pressure sensor device 1 to be finely adjusted, possibly also during its normal operation (even outside the aforementioned electrical testing process).

Finally, changes and modifications may be applied to the present disclosure and the embodiments of the present disclosure.

In particular, it is emphasized that the number and arrangement of the resistive elements 42 of the heating structure 40 described above may vary with respect to what was previously shown by way of example. For example, these resistive elements 42 can be arranged around the entire circumference of the membrane 6 of the pressure detection structure 2 in the horizontal plane xy, or only side by side with one or even more sides of the same membrane 6 . Likewise, the resistive element 42 may also be made of a material other than polysilicon.

In addition, it is emphasized again that the temperature control and adjustment of the pressure detection structure 2 through the heating structure 40 can be implemented inside the processing circuit 10 of the pressure sensor device 1 (in the above-mentioned temperature regulation module 48), or alternatively, through the same Electronics external to the pressure sensor device 1 are realized (for example by the test device 49b described above).

Finally, it is to be noted that the pressure sensor device 1 may have various fields of use, such as industrial or automotive applications, generally in any application requiring hermetic pressure detection.

At least one embodiment of the pressure sensor device (1) of the present disclosure may be generalized to include a pressure sensing structure (2) disposed in a first die (4) of semiconductor material; a package (20), configured to The pressure detection structure (2) is housed inside in an infiltration manner, and the package (20) includes a base structure (21) and a body structure (22), the body structure is arranged on the base structure (21), and has a An access (30) for external environment contact, and internally defines a housing cavity (23), wherein the first tube core (4) is arranged to be covered with a coating material (32), and is housed in the housing cavity ( 23) The heating structure (40) configured to allow heating of the pressure detection structure (2) from inside the enclosure (20).

The heating structure (40) may be integrated in the first die (4).

The heating structure (40) may include a plurality of resistive elements (42) arranged on the top surface (4a) of the first die (4), the resistive elements being connected in parallel with each other to be heated by a current pass through to realize the heating of the pressure detection structure (2).

The pressure sensing structure (2) may include a membrane (6) disposed at the top surface (4a) of the first die (4), arranged in a above the corresponding cavity (7) inside; and a detection element (8) of piezoresistive type, which is arranged in said membrane (6) and is configured to allow detection of deformation of the membrane (6) due to shock pressure waves; wherein , said resistance element (42) of said heating structure (40) may be arranged outside said membrane (6) and close to said membrane (6).

Said resistive elements (42) may be made of respective polysilicon regions formed on the top surface (4a) of said first die (4) laterally and externally with respect to said membrane (6).

The device may also comprise a processing circuit (10), implemented as an ASIC (Application Specific Integrated Circuit), integrated in a second die (12) of semiconductor material, accommodated in said housing cavity (23) of said package (20) ); the processing circuit (10) may include a temperature regulation module (48) integrated in the second die (12) and configured to control heating current to the heating structure (40) supply.

The device may also include a temperature sensor (46) integrated in the first die (4) for allowing detection of the temperature of the pressure detection structure (2); wherein the temperature regulation module (48) may be configured to During the testing and temperature calibration process of the pressure sensor device (1), the supply of heating current to the heating structure (40) is controlled based on the feedback control of the temperature of the pressure detection structure (2) detected by said temperature sensor (46).

The first and second dies (4, 12) may be arranged in a stack, wherein the top surface (12a) of the second die (12) is connected to the bottom surface of the first die (4) by a bonding area (13) (4b).

The heating structure (40) may be configured to heat the pressure detection structure (2) from inside the package (20) during an electrical testing process of the pressure sensor device (1), wherein at different temperatures An output signal from the pressure detection structure (2) is obtained at a reference value.

The electrical test system (49) may be configured to acquire output signals from the pressure sensing structure (2) of the pressure sensor arrangement (1) at different temperature reference values.

The system may comprise a testing device (49b) configured to regulate the temperature of the pressure detection structure (2) from outside the enclosure (20) in cooperation with the heating structure (40) and in combination.

At least one embodiment of the disclosed method of electrical testing of a pressure sensor device (1) may be generalized to include a pressure sensing structure (2) fabricated in a first die (4) of semiconductor material; a package (20), being Configured to accommodate the pressure detection structure (2) inside in an impermeable manner, the package (20) includes a base structure (21) and a body structure (22), the body structure is arranged on the base structure (21), having access (30) to the external environment, and internally defining a housing cavity (23), in which the first tube core (4) is arranged to be coated with a coating material (32) Covering, the method comprising regulating the temperature of the pressure sensing structure (2) from inside the enclosure (20) by means of a heating structure (40) housed in the housing cavity (23).

The method may comprise acquiring an output signal of a pressure detection structure (2) of the pressure sensor device (1) at different temperature reference values.

The method may comprise, in coordination with and in conjunction with heating by said heating structure (40) from the inside of said enclosure (20), conditioning said enclosure (20) by means of external testing equipment (49b) from the outside of said enclosure (20). The temperature of the pressure detection structure (2).

The method may include effecting temperature regulation by said external testing device (49b); and subsequently activating said heating structure ( 40).

The method may comprise implementing feedback control of a heating current supplied to the heating structure (40) to achieve a stable temperature of the same heating structure (40) within a second temperature range around a reference value, said second range being smaller than said first a range.

The various embodiments described above may be combined to provide further embodiments. Aspects of the embodiments can be modified, if desired, to employ concepts of the various patents, applications and publications to provide further embodiments.

These and other changes can be made to the embodiments in light of the above detailed description. Generally, in the appended claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and claims, but should be construed to include all possible embodiments as well as those claimed. Claim the full range of equivalents to which you are entitled. Accordingly, the claims are not limited by the present disclosure.

Claims (20)

1. An apparatus, comprising:

a first die, comprising:

a pressure sensing structure comprising a membrane and a sensing element within the membrane; and

a heating structure;

a package containing the first die, the package comprising a base structure and a body structure on the base structure, the package having an access port in fluid communication with an external environment and defining a housing cavity therein, the first die being disposed in the housing cavity and being covered by a coating material in the housing cavity,

wherein the heating structure is configured to heat the pressure detection structure from an interior of the package.

2. The apparatus of claim 1, wherein the first die further comprises:

a first portion at which a piezoelectric transduction structure is integrated; and

a second portion, separate and distinct from the first portion, at which the heating structure is integrated.

3. The apparatus of claim 2, wherein the heating structure comprises a plurality of resistive elements on the first surface of the first die, the plurality of resistive elements connected in parallel with one another for being traversed by a heating current to effect heating of the pressure detection structure.

4. The apparatus of claim 3, wherein the pressure detection structure comprises a membrane disposed at the surface of the first die, the membrane disposed over a cavity buried within the first die; and is also provided with

Wherein the detection element is piezoresistive and is configured to detect deformation of the membrane due to an impact pressure wave, an

Wherein the plurality of resistive elements of the heating structure are disposed adjacent and proximate to the film.

5. The apparatus of claim 3, wherein the plurality of resistive elements comprise respective polysilicon regions at the first surface of the first die, and the plurality of resistive elements are transverse to the film.

6. The apparatus of claim 3, further comprising a second die comprising processing circuitry implemented as an application specific integrated circuit, ASIC, the second die located in the housing cavity of the package, and the processing circuitry comprising a temperature regulation module configured to control the supply of the heating current to the heating structure.

7. The apparatus of claim 6, wherein:

the first die further includes a temperature sensor configured to detect a temperature of the pressure detection structure, and

the temperature adjustment module is configured to control the supply of the heating current to the heating structure based on feedback control of the temperature of the pressure detection structure detected by the temperature sensor during a test and temperature calibration process.

8. The apparatus of claim 6, wherein the first die and the second die are stacked and a second surface of the second die is coupled to the first surface of the first die by a bonding region.

9. The apparatus of claim 1, wherein the heating structure is configured to implement heating of the pressure detection structure from an interior of the package during an electrical test process, and wherein output signals from the pressure detection structure are acquired at different temperature reference values.

10. A method, comprising:

a test pressure sensor device, the pressure sensor device comprising:

a first die, comprising:

a pressure detection structure; and

a heating structure;

a package containing the first die, the package comprising a base structure and a body structure on the base structure, the body structure having an access opening in contact with an external environment and defining a housing cavity therein, the first die being disposed in the housing cavity, the first die being covered by a coating material,

wherein testing the pressure sensor device comprises:

the temperature of the pressure detecting structure is regulated from inside the package by the heating structure accommodated in the housing cavity.

11. The method of claim 10, further comprising acquiring output signals from the pressure sensing structure of the pressure sensor apparatus at different temperature reference values.

12. The method of claim 10, further comprising adjusting a temperature of the pressure detection structure from outside the package by an external test device in conjunction and in cooperation with heating from inside the package by the heating structure.

13. The method of claim 12, further comprising:

enabling temperature regulation by the external test equipment; and

the heating structure is then activated when the temperature of the pressure detection structure is within a first range around a temperature reference value.

14. The method of claim 13, further comprising implementing feedback control of a heating current supplied to the heating structure to reach a stable temperature within a second temperature range around the temperature reference value, the second range being less than the first range.

15. A system, comprising:

a pressure sensor device comprising:

a base structure comprising a surface;

a body structure on a surface of the base structure, the body structure comprising a housing cavity and a port in fluid communication with the housing cavity, the port exposing the housing cavity to an environment external to the pressure sensor device;

a first die on the surface or the base structure and within the housing cavity; and

a second die within the housing cavity and on the first die, the second die comprising:

a pressure detection structure;

a heating structure configured to generate heat within the housing cavity; and

a temperature sensor;

an external test device comprising a test chamber containing the pressure sensor arrangement, the external test device being configured to externally heat the pressure sensor arrangement by generating heat within the test chamber containing the pressure sensor.

16. The system of claim 15, wherein:

the pressure sensor detection structure of the first die includes a membrane having a first side and a second side opposite the first side;

the pressure sensor device further includes a plurality of resistive elements, and

the plurality of resistive elements includes a first set on the first side of the film and a second set on the second side of the film;

the film is located between the first set of the plurality of resistive elements and the second set of the plurality of resistive elements.

17. The system of claim 15, wherein the pressure sensor device further comprises a plurality of resistive elements, and the plurality of resistive elements are connected in parallel with each other.

18. The system of claim 15, wherein the pressure sensor device further comprises a coating material in the housing cavity, the coating material encapsulating the first die and the second die.

19. The system of claim 15, wherein the external test device and the heating structure are configured to heat the exterior of the pressure sensor apparatus and the interior of the pressure sensor apparatus simultaneously.

20. The system of claim 19, wherein the external test equipment heating is configured to heat the pressure sensor device to a temperature within a first temperature range detected by the temperature sensor within the pressure sensor device, and after the temperature is within the first temperature range, the heating structure is configured to be activated to heat an interior of the pressure sensor device.