CN116845112B - Diode with mixed conduction mechanism - Google Patents
Diode with mixed conduction mechanism Download PDFInfo
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- CN116845112B CN116845112B CN202310826403.0A CN202310826403A CN116845112B CN 116845112 B CN116845112 B CN 116845112B CN 202310826403 A CN202310826403 A CN 202310826403A CN 116845112 B CN116845112 B CN 116845112B
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- 230000007246 mechanism Effects 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 40
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 210000000746 body region Anatomy 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 239000002245 particle Substances 0.000 abstract description 16
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
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- Electrodes Of Semiconductors (AREA)
Abstract
本申请提供一种混合导通机制二极管，包括：第一导电类型衬底层；第一导电类型漂移区，其设置于所述第一导电类型衬底层的一侧；第二导电类型体区，其设置于所述第一导电类型漂移区背离所述第一导电类型衬底层的一侧；锗硅区，其设置于所述第一导电类型漂移区背离所述第一导电类型衬底层的一侧，其中所述第二导电类型体区和所述锗硅区通过所述第一导电类型漂移区分隔开；阳极结构，分别接触所述第二导电类型体区、所述第一导电类型漂移区和所述锗硅区；其中，在正向导通时，所述锗硅区与所述阳极结构的接触处形成空穴导通通道。本申请可通过混合导通机制提高器件大电流导通性能以及抗单粒子辐照性能。
The present application provides a hybrid conduction mechanism diode, comprising: a first conductive type substrate layer; a first conductive type drift region, which is arranged on one side of the first conductive type substrate layer; a second conductive type body region, which is arranged on the side of the first conductive type drift region away from the first conductive type substrate layer; a germanium silicon region, which is arranged on the side of the first conductive type drift region away from the first conductive type substrate layer, wherein the second conductive type body region and the germanium silicon region are separated by the first conductive type drift region; an anode structure, which contacts the second conductive type body region, the first conductive type drift region and the germanium silicon region respectively; wherein, when forward conducting, a hole conduction channel is formed at the contact between the germanium silicon region and the anode structure. The present application can improve the device's large current conduction performance and single particle irradiation resistance performance through a hybrid conduction mechanism.
Description
Technical Field
The invention relates to the field of power semiconductor devices, in particular to a diode with a mixed conduction mechanism.
Background
Super barrier rectifiers (Super Barrier Rectifier, SBR) were proposed by APD company engineers in the united states in the earliest 2007. The SBR takes an upper metal (metal) as an anode, a lower substrate (N+ substrate) is connected with a cathode, a PN junction diode (PIN) and a MOS transistor are integrated between the anode and the cathode in parallel to form a rectifying device, the forward starting voltage of the SBR can be flexibly controlled by adjusting the threshold voltage of the MOS gate, and the reverse voltage-withstanding and electric leakage level of the SBR utilize the reverse bias characteristic of the PN junction. Thus, SBR can simultaneously achieve low forward conduction voltage drop, low reverse leakage level, high temperature stability and short recovery time rectifier characteristics due to its use of operating principles different from conventional PIN and schottky diode (Schottky barrier diode, SBD) devices.
The Schottky contact super barrier rectifier (SSBR) is improved on the basis of the Super Barrier Rectifier (SBR), the SSBR has the advantages of a conventional SBR, a rectifying device is formed by integrating a PIN diode and a MOS channel which are connected in parallel through Schottky contact between an anode and a cathode, forward starting voltage can be controlled more flexibly by adjusting threshold voltages of the Schottky contact and the MOS gate, reverse withstand voltage and electric leakage level utilize PN junction reverse bias characteristics, and barrier reduction effect caused by mirror charges in direct Schottky contact is suppressed. However, the SSBR still has a problem of poor resistance to single particle irradiation.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a diode with a mixed conduction mechanism, which mainly solves the problem that the conventional device is poor in single particle irradiation resistance.
In order to achieve the above and other objects, the present invention adopts the following technical scheme.
The application provides a diode with a mixed conduction mechanism, which comprises a first conduction type substrate layer, a first conduction type drift region, a second conduction type body region, a germanium-silicon region and an anode structure, wherein the first conduction type drift region is arranged on one side of the first conduction type substrate layer, the second conduction type drift region is arranged on one side of the first conduction type drift region, which is away from the first conduction type substrate layer, the germanium-silicon region is arranged on one side of the first conduction type drift region, which is away from the first conduction type substrate layer, the second conduction type body region and the germanium-silicon region are separated through the first conduction type drift region, the anode structure is respectively contacted with the second conduction type body region, the first conduction type drift region and the germanium-silicon region, and a hole conduction channel is formed at the contact position of the germanium-silicon region and the anode structure during forward conduction.
In one embodiment of the application, the anode structure comprises a gate oxide layer, a first conductive type polysilicon layer and a metal anode region, wherein the gate oxide layer is arranged on one side of the first conductive type drift region, which is away from the first conductive type substrate layer, and is respectively contacted with the first conductive type drift region and the second conductive type body region, the first conductive type polysilicon layer is arranged on one side of the gate oxide layer, which is away from the first conductive type drift region, and the metal anode region is bridged on the gate oxide layer and the first conductive type polysilicon layer, and forms Schottky contact with the second conductive type body region, wherein an electronic conduction channel is formed at the contact position of the gate oxide layer and the second conductive type body region during forward conduction.
In one embodiment of the present application, the germanium-silicon region is a heavily doped germanium-silicon region of the second conductivity type.
In an embodiment of the present application, the doping concentration of the first conductivity type substrate layer is higher than the doping concentration of the first conductivity type drift region.
In an embodiment of the present application, a first conductivity type buffer layer is further included, which is disposed between the first conductivity type substrate layer and the first conductivity type drift region.
In an embodiment of the present application, the doping concentration of the first conductivity type buffer layer is between the doping concentration of the first conductivity type substrate layer and the doping concentration of the first conductivity type drift region.
In one embodiment of the present application, the anode structure includes a plurality of anode structures, and each of the anode structures is disposed at intervals.
In an embodiment of the present application, a cathode structure is further disposed on a side of the first conductivity type substrate layer facing away from the first conductivity type drift region.
In an embodiment of the present application, the doping concentration of the second conductivity type germanium-silicon region is higher than the doping concentration of the first conductivity type drift region.
As described above, the diode with the mixed conduction mechanism provided by the invention has the following beneficial effects.
According to the application, the germanium-silicon region is arranged between the drift region and the anode structure, the hole conduction channel is provided through the germanium-silicon region, and when the device is opened in the forward direction, the electron conduction channel and the hole conduction channel form a mixed conduction mechanism, so that the forward large-current conduction capability is improved, and the surge reliability is improved. Meanwhile, when the device is subjected to single particle irradiation, the germanium-silicon region can provide a hole channel, so that holes generated by a single particle effect flow out of the device from the region under the action of an electric field, single particle gate penetration of the device is not easy to occur, and the single particle irradiation resistance of the device is greatly improved.
Drawings
FIG. 1 is a cross-sectional view of a hybrid conduction mode diode according to an embodiment of the present application.
Fig. 2 is a cross-sectional view of a diode with a buffer layer according to an embodiment of the application.
The semiconductor device comprises a 1-metal anode region, a 2-first conductivity type polycrystalline silicon layer, a 3-gate oxide layer, a 4-second conductivity type body region, a 5-first conductivity type drift region, a 6-first conductivity type substrate layer, a 7-germanium silicon region and an 8-first conductivity type buffer layer.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
Referring to fig. 1, fig. 1 is a cross-sectional view of a hybrid conduction mode diode according to an embodiment of the application. The diode comprises a substrate layer 6 of a first conductivity type, a drift region 5 of the first conductivity type, a silicon germanium region 7, a body region 4 of a second conductivity type and an anode structure. The first conductivity type drift region 5 is provided on one side of the first conductivity type substrate layer. The second conductivity type body region 4 is arranged on one side of the first conductivity type drift region 5, which faces away from the first conductivity type substrate layer, and the germanium-silicon region 7 is arranged on one side of the first conductivity type drift region 5, which faces away from the first conductivity type substrate layer, wherein the second conductivity type body region 4 and the germanium-silicon region 7 are separated by the first conductivity type drift region 5. The anode structure contacts the second conductivity type body region 4, the first conductivity type drift region 5 and the silicon germanium region 7, respectively.
In an embodiment, the side of the first conductivity type substrate layer 6 facing away from the first conductivity type drift region 5 may also be provided with a cathode structure, through which an external circuit is connected.
In an embodiment, the first conductivity type may be N-type and the second conductivity type may be P-type.
In one embodiment, the anode structure includes a gate oxide layer 3, a first conductivity type polysilicon layer 2, and a metal anode region 1. The gate oxide layer 3 is arranged on one side of the first conductive type drift region 5, which is away from the first conductive type substrate layer 6, and the gate oxide layer 3 is respectively contacted with the first conductive type drift region 5 and the second conductive type body region 4, the first conductive type polysilicon layer 2 is arranged on one side of the gate oxide layer 3, which is away from the first conductive type drift region 5, the metal anode region 1 is bridged on the gate oxide layer 3 and the first conductive type polysilicon layer 2, and the metal anode region 1 and the second conductive type body region 4 form Schottky contact. The gate oxide layer 3 may entirely cover the first conductive type drift region 5 and partially cover the second conductive type body region 4 such that the gate oxide layer 3 contacts both the first conductive type drift region 5 and the second conductive type body region 4. The remaining contact surface of the second conductivity type body region 4 not covered by the gate oxide layer 3 is in contact with the metal anode region 1. Since the germanium-silicon region 7 and the second conductivity type body region 4 are located on different sides of the gate oxide layer 3, respectively, the metal anode region 1 extends from the second conductivity type body region 4 to the germanium-silicon region 7 via the surface of the first conductivity type polysilicon layer 2 facing away from the gate oxide layer 3 to form a crossover structure. The gate oxide layer 3 is used as a gate of the diode MOS structure, the first conductive type substrate layer 6 is used as a source of the MOS structure, the second conductive type body region 4 is used as a MOS channel, and when the diode is in a forward conduction state, an electron conduction channel is formed at the contact position of the gate oxide layer 3 and the second conductive type body region 4.
In an embodiment, the number of anode structures may be plural, each anode structure is disposed at the same side at intervals, and the arrangement of the plurality of anode structures is convenient for mass production and manufacturing, so as to improve the manufacturing efficiency of the rectifier. The number of the concrete anode structures can be set and adjusted according to the actual application requirements.
In an embodiment, the ge-si region 7 may be doped to form a heavily doped ge-si region of the second conductivity type, by adding the contact between the ge-si region 7 and the metal anode region 1, so that when the device is turned on in the forward direction, a hole conduction channel is formed at the contact between the ge-si region 7 and the metal anode region 1, and a mixed conduction mechanism is formed by the electron conduction channel and the hole conduction channel. The opening voltage of the hole conduction channel can be adjusted by adjusting the size and the doping concentration of the germanium-silicon region 7, and the opening voltage of the electron conduction channel can be adjusted by adjusting the doping concentration of the second conductive type body region 4, so that the requirements of forward conduction performance and single particle irradiation resistance of different application scenes can be met. In addition, the arrangement of the germanium-silicon region 7 can optimize the electric field distribution inside the device, so that the breakdown voltage of the device is increased.
In an embodiment, the doping concentration of the germanium-silicon region 7 may be set higher than the doping concentration of the first conductivity type drift region 5. When the device is opened in the forward direction, the forward direction conduction voltage of the diode structure formed by the germanium-silicon and the first conduction type drift region 5 is higher, the electron conduction channel is opened first, the hole conduction channel is opened later, the forward direction large current conduction capability can be greatly improved, the surge reliability is improved, when the device is subjected to single particle irradiation, the germanium-silicon region 7 can provide the hole conduction channel, so that holes generated by the single particle effect flow out of the device from the hole conduction channel under the action of an electric field, single particle gate penetration of the device is not easy to occur, and the single particle irradiation resistance of the device can be greatly improved.
In an embodiment, the thickness of each layered structure in the hybrid conduction mechanism diode may be set and adjusted according to practical application requirements, and the thickness of the gate oxide layer 3 may be set to 9 nm, for example.
In an embodiment, the first conductivity type substrate layer 6, the first conductivity type drift region 5 and the second conductivity type body region 4 may all use silicon as a main material, the germanium-silicon region 7 uses germanium-silicon as a main material, and each main material forms a corresponding layered structure through doping, wherein the first conductivity type substrate layer 6, the second conductivity type body region 4 and the germanium-silicon region 7 may be obtained through heavy doping, the first conductivity type drift region 5 may be obtained through light doping, and the first conductivity type polysilicon layer 2 may also be obtained through heavy doping, so that the doping concentration of the first conductivity type substrate layer 6 is higher than that of the first conductivity type drift region 5. The dopant of the heavily doped second conductivity type body region 4 is measured to be 3.5x10 13cm-2, the dopant concentration of the heavily doped first conductivity type substrate layer 6 is measured to be 5 x 10 19cm-3, and the dopant concentration of the lightly doped first conductivity type drift region 5 is measured to be 5 x 10 15cm-3-. So that the doping concentration of the first conductivity type substrate layer 6 is higher than the doping concentration of the first conductivity type drift region 5. The doping concentration of each layer structure can also be adjusted according to the requirement, and the method is not limited herein.
Referring to fig. 2, fig. 2 is a cross-sectional view of a diode with a buffer layer according to an embodiment of the application. A first conductivity type buffer layer 8 may also be provided between the first conductivity type substrate layer 6 and the first conductivity type drift region 5. Which is arranged between the first conductivity type substrate layer 6 and the first conductivity type drift region 5. Wherein the doping concentration of the first conductivity type buffer layer 8 is between the doping concentration of the first conductivity type substrate layer 6 and the doping concentration of the first conductivity type drift region 5. The electric field distribution inside the device is further optimized by providing a buffer layer 8 of the first conductivity type, so that the reverse breakdown voltage of the diode is increased.
Based on the technical scheme, compared with the traditional device, the hybrid conduction mechanism diode can improve the forward high-current conduction capability and the surge reliability. And when the device is subjected to single particle irradiation, the heavily doped second conductive type germanium-silicon region 7 can provide a hole channel, so that holes generated by a single particle effect flow out of the device from the region under the action of an electric field, the device is not easy to pass through a single particle gate, and the single particle irradiation resistance of the device is greatly improved.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (6)
1.A hybrid conduction-mechanism diode, comprising:
a first conductivity type substrate layer;
a first conductivity type drift region provided on one side of the first conductivity type substrate layer;
a second conductivity type body region disposed on a side of the first conductivity type drift region facing away from the first conductivity type substrate layer;
The germanium-silicon region is arranged on one side of the first conductive type drift region, which is away from the first conductive type substrate layer, wherein the second conductive type body region and the germanium-silicon region are separated by the first conductive type drift region;
An anode structure contacting the second conductivity type body region, the first conductivity type drift region, and the germanium-silicon region, respectively; the anode structure comprises a gate oxide layer, a first conductive type polysilicon layer, a metal anode region, a germanium-silicon region, a second conductive type polysilicon region, a metal anode region and a second conductive type polysilicon layer, wherein the gate oxide layer is arranged on one side of the first conductive type drift region, which is away from the first conductive type substrate layer, and the gate oxide layer is respectively contacted with the first conductive type drift region and the second conductive type body region;
And in the forward conduction, a hole conduction channel is formed at the contact position of the germanium-silicon region and the anode structure.
2. The hybrid conduction mode diode of claim 1, wherein the doping concentration of the first conductivity type substrate layer is higher than the doping concentration of the first conductivity type drift region.
3. The hybrid conduction mode diode of claim 1, further comprising a first conductivity type buffer layer disposed between the first conductivity type substrate layer and the first conductivity type drift region.
4. The hybrid conduction mode diode of claim 3, wherein the first conductivity type buffer layer has a doping concentration between the doping concentration of the first conductivity type substrate layer and the doping concentration of the first conductivity type drift region.
5. The hybrid conduction-mechanism diode of claim 1, wherein the anode structure comprises a plurality of anode structures, each anode structure being spaced apart.
6. The hybrid conduction mode diode as recited in claim 1, wherein a side of the first conductivity type substrate layer facing away from the first conductivity type drift region is further provided with a cathode structure.
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| CN202310826403.0A CN116845112B (en) | 2023-07-05 | 2023-07-05 | Diode with mixed conduction mechanism |
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| CN202310826403.0A CN116845112B (en) | 2023-07-05 | 2023-07-05 | Diode with mixed conduction mechanism |
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| CN116845112B true CN116845112B (en) | 2025-01-10 |
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| CN116190458A (en) * | 2023-02-28 | 2023-05-30 | 重庆大学 | A Schottky contact super-barrier rectifier including Schottky diode |
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| JP3572268B2 (en) * | 2001-04-03 | 2004-09-29 | 三菱重工業株式会社 | Method for manufacturing semiconductor device |
| CN106783964A (en) * | 2017-01-24 | 2017-05-31 | 深圳基本半导体有限公司 | A kind of wide band gap semiconductor device and preparation method thereof |
| CN108091682B (en) * | 2017-11-21 | 2020-05-01 | 重庆大学 | High-reliability Schottky contact super barrier rectifier |
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| CN104425627A (en) * | 2013-08-29 | 2015-03-18 | 英飞凌科技股份有限公司 | Vertical Semiconductor Device and Method of Manufacturing Thereof |
| CN115295613A (en) * | 2022-10-08 | 2022-11-04 | 烟台台芯电子科技有限公司 | A kind of fast recovery diode structure and its manufacturing method |
| CN116190458A (en) * | 2023-02-28 | 2023-05-30 | 重庆大学 | A Schottky contact super-barrier rectifier including Schottky diode |
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