CN116960217A - Solar cell module - Google Patents

Abstract

The present invention provides a solar cell module comprising: a first module having a first substrate, the first module further having a first conductive line disposed on a first surface of the first substrate, and a second conductive line disposed on a second surface of the first substrate; the second module also has a first conductive line disposed on the first surface of the second substrate and a second conductive line disposed on the second surface of the second substrate; and a film comprising a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to the first surface of the film, wherein the first substrate covers the first film opening, and wherein the second substrate covers the second film opening; wherein the film includes a through hole at a position between the first substrate and the second substrate; and wherein the first conductive wire of the first module is electrically connected to the second conductive wire of the second module via a conductive wire located in a through hole of the film, the assembly being of high quality and high energy conversion efficiency.

Description

A solar cell component

This invention is a division of the Chinese patent application with the application number 2021111488146 and the invention title "A Solar Cell Manufacturing Method and Manufacturing System" submitted on September 29, 2021. The contents of the parent case are incorporated herein by reference.

Technical field

The present invention relates to the field of solar cells, and in particular, to a solar cell module.

Background technique

Solar cells, also known as photovoltaic cells, are power generation technologies that use the photovoltaic effect to directly convert solar radiation into electrical energy. They have the advantages of sufficient resources, cleanliness, safety, and long service life, and are considered to be one of the most promising renewable energy technologies. one.

Currently, silicon heterojunction cells in solar cells have the advantages of low-temperature preparation, simple process steps, superior temperature coefficient, and good product stability, and are expected to become one of the mainstream technologies in the photovoltaic industry. The silicon heterojunction cell includes: a single crystal silicon substrate, intrinsic layers located on the front and back sides of the single crystal silicon substrate, an N-type doped layer on the front intrinsic layer, and a P-type doping layer on the back intrinsic layer. layer, a conductive transparent layer located on the N-type doped layer and a conductive transparent layer on the P-type doped layer.

However, current existing systems for fabricating silicon heterojunction cells are large and costly because they break the system into several reaction chamber sections and require automated equipment to distribute the substrates onto substrate carriers and then The substrates are collected back after processing.

Contents of the invention

The invention provides a solar cell component with high finished product quality and high energy conversion efficiency.

In a first aspect, the invention provides a system for substrate processing, comprising: a frame including a frame opening; and a membrane configured to be coupled to the frame and cover at least a portion of the frame opening, the membrane being configured to couple to the frame and cover at least a portion of the frame opening, The membrane includes a membrane opening, wherein the membrane opening has a membrane opening area equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling to the substrate, wherein when the substrate When coupled to the membrane, the substrate covers the membrane opening and wherein the membrane is configured to maintain the substrate in a set position relative to the frame, and wherein the membrane opening area is less than the The total area of the substrate.

The beneficial effect of the substrate processing system provided by the present invention is that by arranging a thin film around the substrate, the thin film acts as a barrier to prevent plasma from diffusing to the back side of the substrate during the plasma deposition process on the front side of the substrate, and to avoid During the plasma deposition process, plasma is diffused to the front side of the substrate. Moreover, because the frame is provided with a thin film, plasma deposition can be completed on the front and back sides of the substrate on the frame, thereby avoiding flipping of the substrate to improve the finished product of the solar cell module. quality.

Optionally, the system further includes the substrate, wherein the substrate is coupled to the membrane and covers the membrane opening.

Optionally, the substrate is coupled to the film via adhesive or via one or more clamps.

Optionally, the membrane is in tension when coupled to the frame.

Optionally, at least part of the film is a component of a solar cell.

Optionally, the system further includes a transport track configured to transport the frame when the film is coupled to the frame, and to transport the frame when the substrate is coupled to the film. . The transport rails enable the frames to be transported along the transport path, or in other words, the transport rails enable the frames to be moved from one processing station to the next.

Optionally, the frame includes a first magnet, and wherein the transfer track includes a second magnet configured to interact with the first magnet of the frame to retain the frame The first and second magnets function to maintain a vertical orientation of the frame at a certain position relative to the transport track.

Optionally, the system further includes a plurality of processing stations, wherein the transfer track is configured to sequentially move the frame, the film and the substrate to the processing stations.

Optionally, the processing station includes at least two of the etching station, a plasma enhanced chemical vapor deposition (PECVD) station and a physical vapor deposition (PVD) station. an etching station configured to provide dry etching for the substrate; a plasma enhanced chemical vapor deposition (PECVD) station configured to provide PECVD deposition for the substrate; physics a vapor deposition (physical vapor deposition, PVD) station configured to provide PVD deposition for the substrate;

Optionally, the system further includes a memory configured to accommodate a plurality of frames carrying a plurality of substrates, wherein one of the plurality of frames is a frame having the frame opening, and wherein the One of the plurality of substrates is the substrate coupled to the membrane.

Optionally, the film is configured to form a seal around the substrate. The sealed structure prevents plasma from spreading.

Optionally, the membrane includes an additional membrane opening, wherein the membrane is configured to couple with an additional substrate such that the additional substrate covers the additional membrane opening.

Optionally, the system is configured to process the substrate to fabricate one or more solar cells.

Optionally, the frame includes a plasma-resistant coating that protects the frame from plasma corrosion.

Optionally, the system further includes a first isolation grid disposed on the first surface of the film, and a second isolation grid disposed on the second surface of the film, wherein all of the The second surface is opposite the first surface of the film. The function of the first isolation grid and the second isolation grid is to isolate adjacent substrates.

Optionally, the system further includes a vertical holding mechanism configured to hold the frame vertically. In some cases, the vertical retention mechanism may include a magnet that interacts with another magnet at the frame. The function of the vertical holding mechanism keeps the frame in a vertical orientation, so that deposition on the front and back of the substrate can be completed. Compared with the horizontal orientation, the frame occupies a smaller plane area, thereby reducing the footprint of the solar cell manufacturing system. ,save costs.

Optionally, the system also includes a vertical holding mechanism. The vertical holding mechanism on the top of the frame can also be a transmission track or a constraint mechanism. That is, the vertical holding mechanism on the top of the frame is not provided with magnets, but a transmission track or a constraint mechanism to avoid Magnets affect plasma deposition.

In a second aspect, the present invention provides a method of processing a substrate, comprising: providing a frame including a frame opening, wherein a membrane having a membrane opening is coupled to a frame covering at least a portion of the frame opening, and wherein the substrate is coupled to a membrane covering the membrane opening. ; Holding the frame, the film and the substrate vertically together; forming a first I layer over the first surface of the substrate when the substrate is vertically oriented; forming a first I layer on the substrate when the substrate is vertically oriented; A second I layer is formed above the second surface, and the second surface of the substrate is opposite to the first surface; an N layer is formed above the first I layer when the substrate is vertically oriented; and an N layer is formed above the second I layer when the substrate is vertically oriented. A P layer is formed above.

The beneficial effects of the substrate processing method provided by the present invention are that the vertical orientation can occupy a smaller area during substrate processing, and the method allows the two opposite surfaces of the substrate in the vertical orientation to be transferred from opposite sides of the transmission path. Perform substrate processing. Therefore, there is no need to flip the substrate during the manufacturing process of the solar cell module, avoiding the clamping operation of the substrate, which can effectively improve product quality. Furthermore, the film can act as a barrier to avoid the need for plasma deposition on the front side of the substrate. Plasma diffusion to the back side of the substrate and avoidance of plasma diffusion to the front side of the substrate during plasma deposition on the back side of the substrate.

Optionally, the method further includes: forming a first conductive layer over the first surface of the substrate; and forming a second conductive layer over the second surface of the substrate.

Optionally, the first conductive layer includes a first ITO layer, and the second conductive layer includes a second ITO layer.

Optionally, the method further includes forming a first conductive line on the first surface of the substrate while the substrate is coupled to the film, the first conductive line being connected to the a surface of a first conductive layer; and forming a second conductive line on the second surface of the substrate while the substrate is coupled to the film, the second conductive line being connected to the second surface of the conductive layer.

Optionally, the first conductive line extends beyond the first edge of the substrate.

Optionally, the second conductive line extends beyond a second edge of the substrate opposite the first edge of the substrate.

Optionally, the substrate, at least a portion of the film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and the The two conductive layers together form a first module; and wherein the method further includes connecting the first module and the second module to form an assembly.

Optionally, the first module and the second module are connected using adhesive.

Optionally, the first module includes a first substrate, a first conductive line over a first surface of the first substrate, and a second conductive line over a second surface of the first substrate. line, the second surface of the first substrate is opposite to the first surface of the first substrate; the second module includes a second substrate, on the first surface of the second substrate a first conductive line above the surface, and a second conductive line above a second surface of the second substrate, the second surface of the second substrate being in contact with the third surface of the second substrate. One surface is opposite; and wherein, when the first module and the second module are connected, the first conductive line on the first surface of the first substrate is electrically connected to the second substrate. the second conductive line on the second surface of the sheet.

Optionally, the method further includes: placing a first polymer film and a second polymer film on opposite surfaces of the component; and placing the first polymer film, the component and the second The polymer film is sandwiched between the first glass and the second glass.

Optionally, the first module includes a solar cell module.

Optionally, the method further includes texturing the first surface and the second surface of the substrate when the substrate is vertically oriented, wherein in the first I layer, the N layer, the second I layer and the P layer before performing the texturing action.

Optionally, the method further includes moving the frame, the film and the substrate together to a plurality of processing stations, wherein the moving actions are performed while the substrate is vertically oriented.

Optionally, the method further includes removing the film from the frame.

Optionally, the substrate is used to fabricate a solar module, and wherein the method further includes coupling another thin film to the frame, and coupling another substrate to the thin film to fabricate another solar module.

Optionally, the peripheral portion of the membrane is coupled to the portion of the membrane defining the membrane opening and forms a seal with the portion of the membrane defining the membrane opening, the sealing helping to avoid plasma diffusion, thereby avoiding contamination.

Optionally, the membrane includes additional membrane openings, wherein an additional substrate is coupled to the membrane covering the additional membrane openings.

Optionally, the method further includes providing a texturing treatment on the opposing surface of the substrate. Texturing can be achieved using dry etching.

Optionally, the method further includes, prior to the act of providing texturing, coupling the film with a first isolation grid, wherein the first isolation grid is coupled to the first surface of the film.

Optionally, the method further includes coupling the membrane to a second isolation grid, wherein the second isolation grid is coupled to a second surface of the membrane, the second surface of the membrane being in contact with the The first surfaces of the films are opposite.

Optionally, the first isolation grid is configured to isolate the substrate from an additional substrate also coupled to the membrane, wherein at least a portion of the first isolation grid is located between the substrate and the membrane. between the additional substrates.

Optionally, the method further includes: forming a first conductive layer above the N layer, and forming a second conductive layer above the P layer, wherein the first conductive layer is above the substrate, Spanning the space between the substrate and the additional substrate, and extending over the additional substrate.

Optionally, the method further includes removing the first isolation grid, wherein removing the first isolation grid causes portions of the first conductive layer extending over the space between the substrate and the additional substrate to be removed, thereby causing the substrate to The chip is electrically isolated from the attached substrate.

Optionally, the method further includes using a laser device to remove a portion of the first conductive layer spanning the gap between the substrate and the additional substrate.

Optionally, the substrate is processed to form the first module, and the method further includes: using the additional substrate to form a second module; and connecting the conductive lines on the first surface of the first module to the second surface of the second module. of conductive wires for electrical coupling.

Optionally, the act of electrically coupling includes stacking a portion of the second module on a portion of the first module such that the conductive lines on the first surface of the first module are in contact with the conductive lines on the second surface of the second module.

Optionally, the act of electrically coupling includes creating a hole through the thickness of the film at a location between the substrate and the additional substrate, and forming an electrical conductor in the hole.

In a third aspect, the present invention provides a solar cell assembly, including: a first module having a first substrate, the first substrate having a first surface and a third surface opposite to the first surface. Two surfaces, the first module further has a first conductive line disposed on the first surface of the first substrate, and a second conductive line disposed on the second surface of the first substrate. Conductive lines; a second module having a first surface and a second surface opposite the first surface, the second module also having a first conductive line disposed on the first surface of the second substrate, and a second module disposed on the second substrate. a second conductive line on a second surface of the sheet; and a film including a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to the first surface of the film, wherein the first substrate covers the first film opening, and wherein the second substrate covers the second film opening; wherein the film includes a film located between the first substrate and the second substrate and wherein the first conductive line of the first module is electrically connected to the second conductive line of the second module via the conductive line located in the through hole of the film. Conductive thread.

The solar cell module provided by the invention has the beneficial effects of high finished product quality and high energy conversion efficiency.

Optionally, the first module further includes a first I layer disposed on the first surface of the first substrate, a second I layer disposed on the second surface of the first substrate, and a second I layer disposed between the first I layer. The N layer on top, and the P layer provided on the second I layer.

Optionally, the solar cell component further includes a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the between the second polymer film.

Optionally, the solar cell component further includes a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.

In a fourth aspect, the present invention provides a solar cell module, including: a first module including a first film provided with a first film opening; and a first substrate covering the first film opening, wherein the first The substrate has a first surface and a second surface opposite the first surface, wherein the first module further has a first conductive line disposed on the first surface of the first substrate, and a second conductive line on the second surface of the first substrate; and a second substrate covering the second film opening, wherein the second substrate has a first surface and is connected to the first surface. a second surface opposite to each other, wherein the second module further has a first conductive line disposed on the first surface of the second substrate, and a first conductive line disposed on the second surface of the second substrate. a second conductive line on both surfaces; wherein a portion of the first conductive line of the first module extends beyond the edge of the first substrate and is located on the first film; wherein the second module A portion of the second conductive line extends beyond the edge of the second substrate and is located on the second film; and wherein a portion of the second film overlaps a portion of the first film such that the The first conductive line of the first module is electrically coupled to the second conductive line of the second module.

Optionally, the first module further includes a first I layer disposed on the first surface of the first substrate, an N layer disposed on the I layer, and a second N layer disposed on the second surface of the first substrate. I layer, and P layer arranged on the second I layer.

Optionally, the solar cell component further includes a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the between the second polymer film.

Optionally, the solar cell component further includes a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.

In a fifth aspect, the present invention provides one or more solar cell manufacturing systems, including a transportation chamber, a longitudinally-shaped transmission track is provided in the transportation chamber, and the longitudinally-shaped transmission track has a structure located on both sides of the transmission track. a first side and a second side; wherein the frame (carrier) is movable and has a frame opening; wherein a film (e.g., an adhesive film) is adhered to the movable frame and has a plurality of film openings, and the frame opening exposes the plurality of films An opening, each membrane opening exposing a corresponding substrate attached to the membrane.

The beneficial effects of the manufacturing system provided by the present invention are: on the one hand, it can reduce the floor space of the solar cell manufacturing system and save costs; on the other hand, it can avoid pollution caused by plasma diffusion; and on the other hand, it can avoid flipping the substrate to improve the solar cell module. of finished product quality.

Optionally, the manufacturing system further includes a front film station having a first electrode located on a first side of the transfer track and a second electrode located on a second side of the transfer track, The first electrode and the second electrode are configured to move toward the transfer track to form an enclosed space accommodating the substrate.

Optionally, the front film station is configured to form a front film layer on the first surface of the substrate.

Optionally, the manufacturing system further includes a back film station having a first electrode located on the second side of the transport track, and a first electrode located on the first side of the transport track. The second electrode of the back film station, the first electrode of the back film station and the second electrode of the back film station are configured to move toward the transport track to form a closed space containing the substrate.

Optionally, the back film station is configured to form a back film layer on the back surface of the substrate.

Optionally, the front film station is configured to form the front film layer before the back film station forms the back film layer.

Optionally, the back film station is configured to form the back film layer before the front film station forms the front film layer.

Optionally, the manufacturing system further includes a preparation station and a texturing station, wherein both the preparation station and the texturing station are arranged before the front film station and the back film station, and the texturing station A station is configured to provide texturing on the front surface and the back surface of the substrate.

Optionally, the manufacturing system further includes a magnetron sputtering station configured to process the substrate after the substrate is processed by the front film station and the back film station. .

Optionally, the magnetron sputtering station includes a first magnetron sputtering device and a second magnetron sputtering device.

Optionally, the first magnetron sputtering apparatus is configured to face the first surface of the substrate, and is configured to form the front conductive layer on the first surface of the substrate.

Optionally, the second magnetron sputtering device is configured to face the back surface of the substrate, and is configured to form a back conductive layer on the back surface of the substrate.

Optionally, the manufacturing system further includes an isolation grid station configured to respectively arrange isolation grid devices on the first and rear surfaces of the film between adjacent substrates.

Optionally, the manufacturing system further includes a texturing station, wherein the texturing station is located before a preparation station, and the isolation barrier station is arranged between the texturing station and the preparation station.

Optionally, the manufacturing system includes a texturing station configured to provide texturing on the substrate.

Optionally, the texturing station includes dry etching equipment.

Optionally, the texturing station is located between the preparation station and the front/back film station.

Optionally, the material of the isolation grid device includes conductor material and/or tape material.

Optionally, the manufacturing system further includes a stamping station configured to form a through hole through the film between adjacent substrates.

Optionally, the manufacturing system further includes a bus bar connection station located after the stamping station, the bus bar connection station configured to form electrical conductors in the through holes (and optionally also in the base). on the front side and the rear surface of a substrate) such that conductive lines (bus bars) on the front surface of one substrate are identical to conductive lines (bus bars) on the rear surface of an adjacent substrate Electrical connection.

Optionally, the manufacturing system further includes a laser device configured to remove a portion of the front conductive layer and a portion of the back conductive layer between adjacent substrates.

Optionally, the manufacturing system further includes a loading station located behind the preparation station and before the front film station and the back film station.

Optionally, the manufacturing system further includes a buffer chamber located after the front film station and the back film station and before the magnetron sputtering station.

Optionally, the manufacturing system further includes a preheating station located behind the texturing station and before the front film station and the back film station.

Optionally, the manufacturing system also includes an unloading station located after the magnetron sputtering station and before the stamping station.

Optionally, the film includes polyimide, polyester or polypropylene.

Optionally, only a portion of the film around the film window has adhesive properties.

Optionally, the film comprises two planar pieces, one or each of said planar pieces having an adhesive surface, wherein said planar pieces are attached to each other via a last portion of said adhesive surface, wherein said The film opening of one of the two planar components corresponds to the film opening of the other of the two planar components.

Optionally, the substrate is sandwiched between corresponding portions of two planar sheets of film.

In a sixth aspect, the present invention provides a method of manufacturing one or more solar cells performed by a manufacturing system, the method comprising: providing a plurality of substrates, the plurality of substrates including a first substrate, the third substrate Adhering a substrate to a film (e.g., an adhesive film), wherein a film opening in the film exposes a portion of the first substrate; attaching the film to a movable frame; and moving the film along a transport track The frame is transported in the transport cavity.

Optionally, the frame is transported to a first position in which opposing surfaces of the first substrate face the first electrode and the second electrode of the front film station respectively, the opposing surfaces including a front surface and a rear surface; wherein the method further includes: moving the first electrode and the second electrode toward the frame to form an enclosed space accommodating the first substrate; and on the first substrate A front film layer is formed on the front surface of the sheet.

Optionally, the method further includes: transporting the frame to a second position, in which opposite surfaces of the first substrate face the first electrode and the second electrode of the back film station respectively. ;Move the first electrode and the second electrode of the back film station toward the frame to form a closed space that accommodates the first substrate; and on the rear surface of the first substrate A back film layer is formed on top.

Optionally, before forming the front film layer or the back film layer, the method further includes texturing the front and rear surfaces of the first substrate.

Optionally, after forming the front film layer and the back film layer, the method further includes forming a front conductive layer on the front film layer; and forming a back conductive layer on the back film layer.

Optionally, before forming the front conductive layer and the back conductive layer, the first surface and the back surface of the film are respectively provided with isolation grid devices.

Optionally, at least a portion of the front conductive layer extends over a gap between the first substrate and the second substrate, and the method further includes removing the portion of the front conductive layer.

Optionally, at least a portion of the back conductive layer extends over a gap between the first substrate and the second substrate, and the method further includes removing the portion of the back conductive layer. .

Optionally, portions of the front conductive layer and/or portions of the back conductive layer are removed by removing the isolation grid device from the film.

Optionally, a laser is used to remove portions of the front conductive layer and/or portions of the back conductive layer.

Optionally, after removing the portion of the front conductive layer between the first substrate and the second substrate, and after removing the portion of the back conductive layer between the adjacent substrates, the method further includes: A through hole penetrating the film is formed between the film and the second substrate.

Optionally, both the first substrate and the second substrate are connected to the film, and the method further includes forming an electrical conductor in the through hole to connect the first substrate to the first substrate. A first bus bar at one surface is connected to a second bus bar at a second surface of the second substrate.

Optionally, the method further includes cutting the first portion of the film containing the first substrate from a second portion of the film attached to the frame.

Optionally, the method further includes: removing a remaining portion of the membrane coupled to the frame; and reattaching a new membrane to the frame after the remaining portion of the membrane is removed from the frame. The framework is used for the fabrication of the next solar cell.

In a seventh aspect, the present invention provides a solar cell module including at least one substrate unit, wherein the substrate unit includes a plurality of substrates connected together through an adhesive film, and the plurality of substrates include a first substrate. and a second substrate, the first surface of each substrate has a front film layer, the back side of each substrate is provided with a back film layer, the substrate opening exposes at least a portion of the substrate, between adjacent substrates The adhesive film is provided with a through hole penetrating the adhesive film, the surface of the front film layer is provided with a conductive line, the surface of the back film layer is provided with another conductive line, and the front surface of the first substrate It is electrically connected to the back surface of the second substrate.

Optionally, the front conductive layer is disposed between the front film layer and a conductive line associated with the front film layer; and the rear conductive layer is disposed between the back film layer and another conductive line associated with the back film layer.

Optionally, the thickness of the substrate is between 50 microns and 1.5 millimeters.

Optionally, the solar cell component further includes a first plastic sealing layer and a second plastic sealing layer.

The manufacturing system includes a movable frame and a transfer track for manufacturing solar cells, wherein the frame includes a frame opening, the frame surrounding the frame opening is configured to couple with a film (e.g., an adhesive film), the film includes a plurality of film openings, wherein each Each film opening is configured to expose a corresponding one of the substrates.

Optionally, bearing frame materials include aluminum alloy, stainless steel, carbon composite or titanium.

Optionally, the surface of the carrier frame includes a plasma resistant coating.

Optionally, the manufacturing system further includes a detachable mechanism configured to detachably connect the frame to the first isolation grid device on one side of the membrane.

Optionally, the detachable mechanism is further configured to detachably connect the frame with a second isolation grid device on an opposite side of the membrane.

Optionally, the manufacturing system also includes a transport track.

Optionally, the transmission track includes pulleys, conveyor belts or magnetic levitation mechanisms.

Optionally, the manufacturing system further includes a vertical holding mechanism for vertically holding the frame.

Optionally, the top of the vertical holding mechanism includes magnets.

Optionally, the vertical holding mechanism at the top of the movable frame has a first magnet, and a concave magnetic shield is provided on the inner wall of the top of the transport chamber, the concave shape facing the movable frame , the top of the movable frame can be transferred in the groove, a second magnet is provided on the inner wall opposite to the groove, the second magnet is opposite to the first magnet, and the opposite The second magnet is opposite to the first magnet, and a gap is formed between the top of the movable frame and the bottom of the groove.

Solar cells include multiple substrates joined together by thin films (e.g., adhesive films) such that multiple substrates can be formed and/or processed together at one time without strictly controlling the shape and position of the conductive lines on each substrate , and can better realize the electrical connection between the front side of one substrate and the second surface of the adjacent substrate.

Other features will be described in the detailed description.

Description of the drawings

The above and other features and advantages will become apparent to those skilled in the art from the following detailed description of exemplary embodiments thereof with reference to the accompanying drawings, in which:

Figure 1A shows a system for substrate processing provided by the present invention;

FIG. 1B shows an additional process provided by the present invention after the process performed by the system of FIG. 1A;

Figure 2 illustrates a framework provided by the present invention configured for use with the system of Figure 1A;

Figure 3 shows a frame of Figure 2 provided by the present invention, particularly showing the frame movably coupled to a transmission track;

Figure 4 shows a cross-section of the transmission track of Figure 3 provided by the present invention;

Figure 5 shows a membrane provided by the present invention for coupling with the frame of Figure 2;

Figures 6A to 6C illustrate different variations of membranes provided by the present invention for coupling to the frame of Figure 2;

Figure 6D shows a method of attaching a substrate to a film provided by the present invention;

Figure 6E shows a frame provided by the present invention with a plurality of subframes for carrying corresponding films and corresponding substrate groups;

6F shows an isolation grid configured to isolate substrates from each other provided by the present invention;

Figure 6G illustrates the isolation of a substrate group provided by the present invention;

Figure 6H shows another method of attaching a substrate to a film provided by the present invention;

Figure 7 shows a processing chamber in a processing mode provided by the present invention;

Figure 8 shows the relative positioning between the components of the processing chamber of Figure 7 and the frame of Figure 2 provided by the present invention;

Figure 9 shows the processing chamber of Figure 7 in transfer mode provided by the present invention;

Figure 10A shows another processing chamber provided by the present invention;

Figure 10B shows two film stations provided by the present invention, each film station having the configuration shown in Figure 10A and in a processing mode;

Figure 10C shows the two film stations of Figure 10B in transmission mode provided by the present invention;

Figure 11 shows a sputtering module with an open shutter provided by the present invention;

Figure 12 shows a sputtering module with a closed shutter provided by the present invention;

Figure 13 illustrates a technique provided by the present invention for removing a processed substrate from the frame of Figure 2;

Figure 14 shows a cross-sectional view of the solar cell module provided by the present invention;

Figure 15A shows a module provided by the present invention with a thin film of multiple substrates coupled thereto;

Figure 15B shows two modules provided by the present invention coupled together to form an assembly;

Figure 15C shows twelve modules provided by the invention coupled together to form an assembly;

Figure 16 shows the installation of polymer films and glass onto multiple modules provided by the present invention;

Figure 17 shows the technology provided by the present invention to electrically connect two modules coupled to each other through thin films;

Figure 18 shows a substrate processing method provided by the present invention;

Figure 19 illustrates another system for substrate processing provided by the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention. Among them, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification and appended claims of this application, the singular expressions "a," "the," "above," "the" and "the" are intended to also include, for example, "a "or more" unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of this application, "at least one" and "one or more" refer to one or more than two (including two). The term "and/or" is used to describe the relationship between associated objects, indicating that there can be three relationships; for example, A and/or B can mean: A exists alone, A and B exist simultaneously, and B exists alone, Where A and B can be singular or plural. The character "/" generally indicates that the related objects are in an "or" relationship.

Various exemplary embodiments and details, where relevant, are described below with reference to the accompanying drawings. It should be noted that the drawings may or may not be drawn to scale, and that elements of similar structure or function are designated by the same reference numerals throughout the drawings. It should also be noted that the drawings are only intended to facilitate the description of the embodiments. They are not intended to be an exhaustive description of the invention or to limit the scope of the invention. Additionally, the illustrated embodiments need not have all aspects or advantages demonstrated. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment, and may be practiced in any other embodiment, even if not so shown, or if not explicitly described.

According to the technical solution of the present invention, the solar cell manufacturing system and the transportation chamber have a longitudinally shaped transmission track, and the transportation chamber is provided with a first side and a second side located on both sides of the transmission track. A film (eg, adhesive film) is adhered to the movable frame and has a plurality of film windows (also called film openings). The frame has a frame opening that exposes the membrane and at least a portion of the membrane opening. Each film opening is configured to expose a corresponding substrate. The manufacturing system has a front film station for forming a front film layer on a first surface of a substrate, and a back film station for forming a back film layer on a second surface of the substrate. The invention occupies a small area and is beneficial to cost saving.

In order to make the above objects, features and beneficial effects of the present invention more apparent, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Manufacturing systems and methods

Figure 1A illustrates a manufacturing system 10 for manufacturing one or more solar cells. As shown in FIG. 1A , a solar cell manufacturing system 10 is provided for forming one or more heterojunction solar cells, and includes a preparation station 107 , a loading station 108 , a texturing station 104 , two front film stations 102 (each A plasma enhanced chemical vapor deposition (PECVD) chamber with a front plasma enhanced chemical vapor deposition (PECVD) chamber), two back film stations 103 (each with a rear PECVD chamber) and a magnetron sputtering station 106 (with a first magnetron sputtering device 106a and a second magnetron sputtering device 106b). Manufacturing system 10 also includes a slit valve 130 configured to interface between atmospheric pressure and vacuum involved in the various processes performed by manufacturing system 10 .

The preparation station 107, the loading station 108, the texturing station 104, the front film station 102, the back film station 103 and the magnetron sputtering equipment 106 are configured to cooperate with each other in space and time. This avoids the need to have a separate film guide to achieve spatial and temporal matching between processing stations, and the solar cell manufacturing system is relatively simple and has a small footprint. Additionally, because the substrate does not require the use of a manipulator to enter or exit any film guide, the substrate is less prone to particles.

Texturing station 104 is configured to texture a front surface and a back surface of a substrate such that a front surface (eg, a first surface) and a back surface (eg, a second surface) of a substrate (also referred to as a substrate) Create texture. The front thin film station 102 is configured to form a front thin film layer on the front surface of the substrate, where the front thin film layer includes a front intrinsic layer and a front doped layer located on the front intrinsic layer. The back film station 103 is configured to form a back film layer on a back surface of a substrate (also called a substrate), where the back film layer includes a rear intrinsic layer and a rear doped layer located on the rear intrinsic layer. The magnetron sputtering station 106 is configured to form a front conductive layer and a back conductive layer on the front and back sides of a substrate (also referred to as a substrate), respectively. In some embodiments, each conductive layer may be an indium tin oxide (ITO) layer. In other embodiments, each conductive layer may be made of other materials.

As shown in FIG. 1A , after the front film station 102 and the back film station 103 , the solar cell manufacturing system 10 also includes a buffer chamber 110 and a magnetron sputtering station 106 . After the buffer chamber 110 , the magnetron sputtering station 106 The pressure of may be different from the pressure in the cavity of the front membrane station 102 or the pressure in the cavity of the back membrane station 103 . The buffer chamber 110 is configured such that the pressure in the buffer chamber 110 can reach the pressure in the magnetron sputtering station 106 .

The material of the front intrinsic layer and the rear intrinsic layer includes amorphous silicon (A-SI:H). In some cases, each of the front intrinsic layer and the rear intrinsic layer may include one or more (eg, 2, 3, etc.) layers of amorphous silicon: the material of the front doped layer may be amorphous silicon or stacked layer of microcrystalline silicon, or both are doped with N-type ions. The material of the post-doped layer is amorphous silicon doped with P-type ions. In some cases, the front-doped intrinsic layer may be a phosphorus-doped intrinsic layer and the rear-doped intrinsic layer may be a boron-doped intrinsic layer. In this case, phosphorus may be used to form the N layer, and boron may be used to form the P layer. The material of the front conductive layer and the rear conductive layer is transparent conductive oxide. In other embodiments, other materials may be used for different layers.

In some cases, the N and P layers may be made of microcrystalline silicon. Additionally, in some embodiments, any, any multiple, or all of the I layer, N layer, and P layer may be composed of multiple deposited layers of similar materials deposited under different processing conditions to improve the performance of the solar cell. conversion efficiency.

The solar cell manufacturing system 10 also includes a transmission path 100 . In some cases, transfer path 100 may include tracks, guides, transfer surfaces, etc. extending along one or more transfer chambers that provide a vacuum environment. The elongated track L is arranged in the transfer cavity 1014 . The elongated track L is configured to allow movement of the frame 101 along it, thereby placing the frame 101 at different processing stations for processing substrates carried by the frame 101 .

As shown in Figure IB, during use, the frame 101 is provided with a frame opening (item 170). The membrane 120 with membrane openings is then coupled to the frame 101 (item 171). When membrane 120 is coupled to frame 101, membrane 120 covers at least a portion of the frame opening, allowing the frame opening to expose membrane 120 and the membrane opening. Next, a plurality of substrates 20 (also referred to as substrates) are coupled to the membrane 120 such that the substrates respectively cover the membrane openings (item 172). In other embodiments, the substrate may be coupled to the membrane 120 first, and then the membrane 120 may be coupled to the frame 101 . When membrane 120 is coupled to frame 101, membrane 120 is under tension (eg, in at least two orthogonal directions).

Next, the frame 101 with the film 120 and the substrate 20 is inserted into the preparation station 107 (item 174). Fabrication system 10 then sequentially transports frame 101 (along with film 120 and substrate 20) to different stations for placement of solar cell components onto the substrate (item 176). The processing of substrate 20 by manufacturing system 10 in item 176 will be described in detail with reference to FIG. 1A. The processed substrates (modules) are then provided to storage station 112 (item 178), as shown in Figure 1B.

Next, the processed substrate is retrieved from storage station 112 (item 180). In some embodiments, interconnect holes are then punched through the membrane 120 at locations between the processed substrates. Additionally, in some embodiments, if an isolation grid device is provided to isolate processed substrates (also referred to as substrates) or groups of substrates from each other during processing by the manufacturing system 10, the isolation grid device may also be used in item 180. removed during the period. Isolation grid devices may be configured to be disposed on membrane 120 at locations between processed substrates. Therefore, when a layer is formed on a substrate by the manufacturing system 10, a portion of the layer may be formed on the surface of the substrate, extend to an isolation gate device disposed between the substrate and an adjacent substrate, and extend to the adjacent substrate. on the surface of the adjacent substrate. When the isolation grid device is later removed, a portion of the layer located on the isolation grid device will be correspondingly removed, thereby breaking the formed layer into separate layer portions for each substrate. Removal of the isolation grid device will also expose the membrane 120 at locations between the processed substrates, allowing the membrane 120 at these locations to be perforated to implement interconnect holes.

Next, electrical conductors (conductive wires such as bus bars) are then disposed on the processed substrate (item 181). In the embodiment shown, bus bars and cell connections are formed on the processed substrate. In some embodiments, printing techniques may be used to form the bus bars. Additionally, in some embodiments, a set of front bus bars can be formed on the front surface of each processed substrate (also known as the substrate), and a set of rear bus bars can be formed on each processed substrate (also known as the substrate) on the back surface. Bus bars are formed to connect the ITO surface at the processed substrate, and in the final product, these bus bars are configured to collect electrons from the ITO surface. In some embodiments, the bus bars may be made from silver or silver-coated copper wire or strips. In another embodiment, the bus bars may be made of plated copper. In additional embodiments, the bus bars may be made of other materials. In Item 181, electrical conductors may also be formed in the interconnect holes described with reference to Item 180, thereby connecting the front bus bar of the substrate to the rear bus bar of the adjacent substrate (as shown in Figure 17, which will be in (described in further detail below).

Next, the processed substrate (module) is removed from the frame 101 (item 182). In some embodiments, removal of the module from the frame 101 may be accomplished by cutting the membrane 120 such that a first portion of the membrane 120 to which the module is attached may be removed from the frame 101 while leaving a portion of the membrane 120 coupled to the frame 101 Part II (item 190). The second portion of film 120 may be removed from frame 101 to allow frame 101 to be reused (for another film and other substrates) (item 170).

Next, the module connected to the cutout film 120 is placed in an oven and heat treated (item 183). This heat treatment hardens the silver paste that can be used to form bus bars (in item 181). In some cases, a solvent can be added to make the silver pliable for the busbars to form (eg, via screen printing), and the applied heat is used to evaporate the solvent. In some cases, there may be multiple frames 101 with multiple corresponding films 120 for processing by the manufacturing system 10 . In this case, multiple cut-off films 120 (with corresponding module groups) can be heat treated together.

Next, the heat-treated module sets (coupled to corresponding severing films 120) are connected to each other to form an assembly (item 184). For example, a first set of modules on a first severing film 120 may be connected to a second set of modules on a second severing film 120 . In some embodiments, the outer portion of the second severing film 120 may overlap with the outer portion of the first severing film 120 to form an electrical connection between the first set of modules and the second set of modules (as shown in FIGS. 15B and 15C display, which will be described in further detail). This overlapping technique allows the top bus bar at the top surface of one module to be electrically connected to the bottom bus bar at the bottom surface of an adjacent module via the overlap region.

Next, a polymer layer (eg, an ethylene vinyl acetate copolymer (EVA) layer) is then disposed on the opposite side of the component, and the glass is disposed on the opposite side containing the polymer layer and the component, thereby Forming the completed solar panel assembly (item 186). The completed solar panel assembly is then connected to the junction box (item 187). The junction box is configured to collect and output direct current (DC) voltage across the solar panel assembly. The solar cells in the solar panel assembly are connected in series along the first direction of the solar panel assembly. Horizontal bus bars collect the outputs of corresponding columns and form counterweight connections. The DC voltage supplied by both sides of the solar cells in the solar panel assembly is collected at the junction box via parallel and series connections.

In some embodiments, the features described with reference to Item 170, Item 171, Item 172, Item 180, Item 181, Item 182, Item 183, Item 184, Item 186, Item 187, or any combination of the foregoing, may be performed automatically by the processing station , the processing station may be considered to be part of the manufacturing system 10 . For example, manufacturing system 10 may optionally include: a frame processing station for providing frame 101 (described with reference to item 170); a film installation station configured to couple film 120 to frame 101 (described with reference to item 171); a base a sheet mounting station configured to couple the substrate to the membrane 120 (described with reference to item 172), an isolation mesh removal station configured to remove one or more isolation meshes from the frame 101 and/or from the membrane 120 Grid equipment (described with reference to Item 180), a hole punching (or punching) station configured to form through holes (described with reference to Item 180) in the film 120, configured to form busbars on opposite sides of the substrate A strip printing station, and a bus bar connection station configured to form electrical conductors to connect bus bars from one side of the substrate to bus bars from the opposite side of the adjacent substrate (described with reference to Item 181), a trim station, A heating station (described with reference to item 183) configured to remove a portion of the film 120 containing the processed substrate (described with reference to item 182) for thermally treating the processed substrate 20, configured to connect a plurality of An assembly station that processes the substrate (substrate) 20 to form a component (described with reference to item 184) is configured to provide a polymer layer and glass (described with reference to item 186) on opposite sides of the component. An encapsulation station is configured as A film removal station that removes the remainder of the film 120 (described with reference to items 170, 190) from the frame 101, or any combination of the foregoing.

In some embodiments, any processing station described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Furthermore, in some embodiments, any processing station described herein may optionally include a control component, a feedback component (eg, one or more sensors), or any other mechanical and/or electrical component.

The processing of the substrate in item 176 by the manufacturing system 10 will now be described with reference to FIG. 1A. First, the frame 101 carrying the substrate 20 is transferred from the preparation chamber 107 to the load chamber (LL) 108, which is configured to transfer the substrate 20 from an atmospheric environment to a vacuum environment. The frame 101 carrying the substrate 20 is transferred from the loading station 108 to the texturing station 104. The texturing station 104 includes a front texturing station 104a and a rear texturing station 104b. In some embodiments, each of texturing station 104a/texturing station 104b may be an inductively coupled plasma etching apparatus. In other embodiments, each of texturing station 104a/texturing station 104b may be a capacitively coupled plasma etching device. Additionally, in some embodiments, each texturing station 104a/texturing station 104b may include a cavity in which texturing may be performed on the substrate 20. The texturing process performed by the texturing station 104 is to roughen the opposing surfaces of each substrate 20 to reduce reflections from the surfaces of the substrates 20 so that more photons can be absorbed by the substrates 20 .

In the example shown, the surface of substrate 20 is textured by dry etching in texturing station 104 so that the degree of texturing is relatively easy to control and the texture is not too deep. Therefore, substrate 20 need not be thicker (compared to wet etching techniques). In other words, due to the dry etching technique, the substrate 20 having a thinner thickness can be used to form the solar cell. Since the thickness of the substrate is relatively thin, the cost of the substrate is reduced. In this embodiment, the thickness of the substrate can be anywhere from 50 microns to 180 microns. In some embodiments, dry etching may be accomplished using reactive ion etching (RIE).

It is advantageous to use dry etching in the same vacuum environment before PECVD deposition. This is because there is no oxidation of the silicon surface and therefore covering the exposed silicon surface may not be as urgent as in current processing sequences. In the current processing sequence, the silicon surface after wet etching has a waiting time requirement to complete PECVD deposition on the bare silicon surface to prevent oxidation.

In the example shown, after the substrate 20 carried by the frame 101 is processed by the texturing station 104, the frame 101 carrying the substrate 20 is conveyed into the preheating station 109 before entering the first front film station 102 because the first The temperature in the front film station 102 is different from the temperature in the texturing station 104 and the preheating station 109 is configured to preheat the substrate 20 to a specific temperature before being processed by the first front film station 102 . By way of non-limiting example, preheating station 109 may be configured to preheat substrate 20 to a temperature above 100 degrees Celsius, above 150 degrees Celsius, etc. During processing by the film station 102, temperatures may reach above the preheat temperature.

A first front film station 102 (eg, the leftmost film station 102 in FIG. 1A ) is configured to cover the I layer over (or to) the front surface of the substrate 20 , and a first back film station 103 (eg, The leftmost film station 103)) in Figure 1A is configured to place the I layer over (or to) the backside of the substrate 20. Furthermore, the second front film station 102 is configured to provide an N layer on the front surface of the substrate 20 , and the second back film station 103 is configured to provide a P layer on the second surface of the substrate 20 . In some cases, front film station 102 and back film station 103 may each be configured to perform PECVD to create I, N, and P layers onto substrate 20, respectively. In one implementation, PECVD deposition can be performed to form the I, N, and P layers. By orienting the substrate 20 vertically, separate stations can sequentially deposit corresponding materials onto opposite surfaces of the substrate 20 from opposite sides of the transfer path 100 , which is advantageous because it prevents doping of one side of the substrate chemicals contaminate the other side of the substrate.

In other embodiments, two front film stations 102 may be configured to process the front surface of the substrate (also referred to as the first surface), and then two back film stations 102 then process the back surface of the substrate (also referred to as the second surface). surface). For example, a first front film station 102 may form an I layer on the front surface of the substrate 20 and then a second front film station 102 may form an N layer on the front surface of the substrate 20 . Next, the first back film station 103 may form the I layer on the back surface of the substrate 20 , and then the second back film station 103 may form the P layer on the back surface of the substrate 20 .

In some embodiments, the front film station 102 may have two sub-stations for forming the first I layer and the N layer respectively. In this case, the Manchester system 10 may not include the second front film station 102 . In addition, the back film station 103 may have two sub-stations for respectively forming the second I layer and the P layer. In this case, the manufacturing system 10 may not include the second back film station 103 . Furthermore, in some embodiments, the substations may be arranged to first form a first I-layer, then a second I-layer, and subsequently the N-layer and P-layer. In other embodiments, substations may be arranged to form layers in other orders. For example, in other embodiments, the substations may be arranged to first form a first I layer, then an N layer, then a second I layer, and then a P layer. In other embodiments, manufacturing system 10 may include additional film stations or sub-stations to form additional layers on the front surface of substrate 20 and/or additional layers on the back surface of substrate 20 .

In the embodiment shown, the frame 101 carrying the substrate 20 first enters the first front film station 102 and then the first back film station 103. In other embodiments, the frame 101 first enters the first back film station 103 and then Enter the first front membrane station 102.

As shown in FIG. 1A , after being processed by the front film station 102 and the back film station 103 , the substrate 20 carried by the frame 101 is transported to the buffer chamber 110 before being processed by the magnetron sputtering station 106 . The pressure in 106 may be different from the pressure in the cavity of the front membrane station 102 or the pressure in the cavity of the back membrane station 103 . The buffer chamber 110 is configured to bring the pressure in the buffer chamber 110 to the pressure in the magnetron sputtering station 106 and/or to heat the substrate 204 . For example, in some embodiments, buffer chamber 110 may provide a buffer for differential pressures between PECVD processing and PVD processing. Alternatively or additionally, buffer chamber 110 may include a substrate heating mechanism configured to heat the substrate to maintain substrate 20 at a specific temperature in buffer chamber 110 . In some cases, the heating mechanism may be configured to maintain a temperature in the buffer chamber 110 at 100c, which is lower than the temperatures associated with the PECVD process (eg, anywhere from 200°C to 250°C).

The magnetron sputtering station 106 includes a first magnetron sputtering device 106a and a second magnetron sputtering device 106b. The first magnetron sputtering device 106a is configured to deposit material onto the first surface of the respective processed substrate 20 to create a first conductive layer (eg, a front conductive layer or a back conductive layer). Similarly, the second magnetron sputtering device 106b is configured to deposit material onto a second surface (opposite the corresponding first surface) of the respective processed substrate 20 to create a second conductive layer (eg, a front conductive layer or rear conductive layer). In some cases, each of the first magnetron sputtering device 106a and the second magnetron sputtering device 106b may be configured to perform physical vapor deposition (PVD) to create the conductive layer. In some embodiments, each conductive layer may be an ITO layer/film. The ITO layer includes indium, tin, and oxygen, and can be optically clear.

Continuing with reference to Figure 1A, after being processed by the magnetron sputtering station 106, the frame 101 carrying the substrate 20 is then transported to an unloading chamber 111 to convert the substrate from a vacuum environment to an atmospheric environment. The frame 101 is then transported from the unloading chamber 111 to a storage station 112 which stores the frame 101 together with the processed substrate 20 .

When the frame 101 carrying the substrate 20 is transported along the transport path 100, the frame 101 is oriented vertically (eg, the normal to the plane of the frame 101/substrate is approximately parallel to the floor, where approximately parallel refers to 0 degrees plus/minus 10 degree angle). Therefore, when the substrate 20 is vertically oriented, the substrate 20 is processed by the texturing station 104, the front film station 102, the back film station 103 and the sputtering station 106. This feature is advantageous because it allows the transfer path 100 to occupy a smaller area (compared to a horizontal system in which the substrate is processed horizontally). Furthermore, orienting the substrate vertically allows the texturing station 10 to perform texturing on opposing surfaces of the substrate without resorting to turning tools (which occupy a larger area and thus result in relatively high costs) to achieve different surfaces. processing. It should be noted that in this embodiment, in addition to using the transmission path 100, the frame 101 can also be transported using a slit valve located in the chamber of the processing station. Among them, slit valves can separate different chambers of different processing stations.

In manufacturing system 10, substrate 20 is processed without flipping the substrate. This is because substrate 20 is oriented vertically when processed by manufacturing system 10 . In particular, the manufacturing system 10 has various processing stations arranged on opposite sides of the transport path 100 , which allows two opposing surfaces of a vertically oriented substrate 20 to be processed from opposite sides of the transport path 100 . Therefore, there is no need to turn over the substrate 20 during the manufacturing process.

substrate carrying frame

Figure 2 shows the frame 101 in greater detail. As shown in FIG. 2 , the frame 101 includes a peripheral portion 1010 defining a frame opening 1011 and a transmission track 1012 for enabling the frame 1010 to move along a predetermined track. By way of non-limiting example, the transfer track 1012 may be one or more wheels, one or more rollers, one or more bearings, one or more gliders, one or more wheels configured to couple with a track or belt. Mechanical interface, etc.

In some embodiments, the transport track 1012 may be disposed at the bottom of the frame 101 . In other embodiments, the transfer track 1012 may be arranged at one side of the frame 101 or at the top of the frame 101 . In other embodiments, the transfer track 1012 may also be provided at other locations.

By way of non-limiting example, the material of frame 101 may include aluminum alloy, stainless steel, carbon composite, titanium, polymer, or any other metal or alloy. The surface of the frame 1010 may be coated with an anti-plasma coating, and the anti-plasma coating protects the bearing frame 1010 from plasma corrosion.

Referring to Figure 3, a transport track 1012 enables transport of the frame 101 along the transport path 100 so that the frame 101 (with the film 120 and the substrate 20) can be placed in different stations of the manufacturing system 10, as shown in Figure 2 with the carrier The functional frame 101 is transported in a vertical direction along the transport path 100 . Because the substrate 20 and the film 120 are coupled to the frame 101 (where the major surfaces of the substrate 20 and the film 120 are parallel to the plane of the frame 101 ), due to the vertical orientation of the frame 101 , the substrate 20 is There is also a vertical orientation during processing. This configuration is advantageous because the frame 101 occupies a smaller area. In particular, the footprint occupied by a vertically oriented frame 101 is approximately L times t, where L is the length of the frame 101 and t is the thickness of the frame 101 . The planar area occupied in the frame 101 if the frame 101 is oriented horizontally (in this case the occupied area will be L times L). Therefore, the transport track in the manufacturing system 10 occupies less area (compared to a horizontal system that processes substrates horizontally), and manufacturing costs are reduced.

In some embodiments, the transfer path 100 may include a pulley configured to be removably and mechanically coupled to the transfer track 1012 . In other embodiments, the transfer path 100 may include a conveyor belt or magnetic suspension mechanism configured to interface with the transfer track 1012 . In further embodiments, the transport path 100 may simply provide a surface for allowing the transport track 1012 to move over it. Additionally, in some embodiments, transport path 100 may include rails, and transport rail 1012 and rails may be implemented using a tongue-and-groove mechanism or any mechanical coupler that allows frame 101 to be moveably and removably coupled to the rails.

As shown in FIGS. 2-4 , the frame 101 also includes a vertical holding mechanism 1013 for keeping the frame 101 vertical while substrates coupled to the frame 101 are being processed by the manufacturing system 10 . Vertical retention mechanism 1013 is configured to interface with channel 402 of track 404 coupled to support structure 118 (FIG. 4). In particular, the channel 402 is configured to receive the vertical mechanism 1013 so that the frame 101 can slide relative to the track 404 and remain in a vertical direction.

In the illustrated embodiment, the vertical retention mechanism 1013 includes a magnet (referred to herein as the "first magnet"). As shown in Figure 4 (Figure 4 is a side view of Figure 3), the first magnet of the vertical holding mechanism 1013 has an N pole and an S pole. The track 404 is provided with a magnetic shield 150 having a concave or c-shaped cross-sectional shape. The track 404 also has a second magnet 151 and a third magnet 152. The second magnet 151 has an N pole facing the vertical holding mechanism 1013, and the third magnet 152 has an S pole facing the vertical holding mechanism 1013. During processing of the substrate 20, the frame 101 (and the substrate) is held upright by the repulsion between the first and second magnets 151 of the vertical holding mechanism 1013, the top of which is spaced from the inner surface of the track 404. open so that the top of the vertical holding mechanism 1013 does not contact the inner surface of the track 404. The opposite sides of the vertical holding mechanism 1013 are also spaced apart from the inside surface of the track 404 due to the opposite poles of the docking magnets. Therefore, the movement of the frame 101 relative to the track 404 does not generate any particles and contamination problems are avoided.

In other embodiments, the vertical holding mechanism 1013 on the top of the frame 101 can also be a transmission rail or a constraint mechanism, that is, the vertical holding mechanism 1013 on the top of the frame 101 is not provided with magnets, but is a transmission rail or constraint mechanism similar to the transmission rail 1012 to avoid magnets affecting plasma deposition.

In the embodiment shown, the vertical holding mechanism 1013 is arranged on top of the frame 101 . In other embodiments, the vertical holding mechanism 1013 may also be provided at other locations, such as at the bottom of the frame 101, on the side of the frame 101, etc.

In other embodiments, frame 101 does not include transfer rail 1012 . For example, in some embodiments, the conveyor path 100 may include a conveyor track 1012 , such as one or more wheels, one or more rollers, or the like, that mechanically supports the frame 101 and allows the frame 101 to move along the conveyor path 100 . In other embodiments, the bottom of frame 101 may not be in contact with any rails, and rails may not be needed. In such cases, top rail 118 may include mechanical components configured to removably couple to frame 101 while maintaining frame 101 vertically and supporting the weight of frame 101 .

Figure 5 shows an example of a film (eg, adhesive film) 120 configured to be coupled to the frame 101 of Figure 3, with the film 120 having a plurality of films corresponding to respective substrates that will be coupled to the film 120. Opening 1201. Frame opening 1011 of frame 101 exposes membrane 120 and also exposes membrane opening 1201 . The frame opening 1011 and the membrane opening 1201 also cooperate with each other to expose the substrate coupled to the corresponding membrane opening 1201 during the manufacturing process.

The material of the membrane 120 may be made of a material that is resistant to high temperatures and/or large temperature changes without significant deformation, and is chemically resistant to plasma reactions. In this manner, film 120 may be able to withstand high temperatures while being processed by manufacturing system 10 . In some cases, the temperature in one or more stations of manufacturing system 10 is no higher than 250 degrees Celsius, and film 120 is not susceptible to deformation at such temperatures. Furthermore, in some cases, the adhesion effect of substrate 20 on film 120 is not adversely affected by the high temperatures reached during the manufacturing process performed by manufacturing system 10 . In some embodiments, silicone-based adhesives or any other adhesive capable of withstanding high temperatures (e.g., above 150 degrees Celsius, such as 200-250 degrees Celsius, adhesives above 250 degrees Celsius, etc.) can be used The substrate 20 is attached to the film 120 . In some embodiments, the material of the film 120 may be polyimide, polyester polypropylene, or the like. In some embodiments, thin film 120 may be made of a material capable of withstanding the heat involved during the plasma process to form a layer on the substrate. In some embodiments, the film 120 will become a component of the solar cell module after completion of the manufacturing process. In this case, the film 120 can be made of a transparent or translucent material that is part of the solar cell module and is assembled as part of the future light channel.

In the example shown, each membrane opening 1201 has a portion configured to expose a majority of the corresponding substrate 20 to be attached to the membrane 120 , which is advantageous because it allows the membrane opening 1201 to expose both sides of the substrate 20 Most of the surface area in the opposite surface. Thus, the manufacturing system 10 can form layers of solar cell modules on opposite sides of the substrate 20 while the substrate 20 is being carried by the frame 101 and the film 120 .

In the example of Figure 5, membrane 120 has 36 membrane openings 1201. One possible way is to cut the film to form the film opening as shown in Figure 5; another possible way is to adhere the strip film laterally and vertically to the frame, thereby Form film openings. In other examples, membrane 120 may have other numbers of membrane openings 1201. For example, in other examples, film 120 may have less than 36 film openings 1201, such as two rows of six film openings (ie, 12 film openings), one film opening, etc. In other examples, membrane 120 may have more than 36 membrane openings 1201.

It should be noted that the frame 101 is not limited to carrying one film 120 . Frame 101 may be configured to couple to one membrane 120 (Fig. 6A) or to multiple membranes 120 (Figs. 6B-6C). Figure 6B shows a frame 101 carrying three membranes 120, each membrane 120 having 12 substrates 20 coupled thereto. Figure 6C shows a frame 101 carrying six films 120, each film 120 having six substrates 20 coupled thereto. The frame 101 may carry other numbers of films 120 . Additionally, each film 120 may carry other numbers of substrates 20 .

Figure 6D illustrates a method of coupling substrate 20 to membrane 120. As shown in top view, membrane 120 has membrane openings 1201. Each membrane opening 120 has a size (area) whose total area is less than the total area of the corresponding substrate 20 in the example shown, and the membrane openings 120 have cross-sectional dimensions that are smaller than the cross-sectional dimensions of the substrate 20, which allows the substrate 20 to The substrate 20 overlaps the film 120 by 1 mm on each of the two opposite sides. Next, referring to the middle view of Figure 6D, adhesive is applied to the portion of film 120 surrounding film opening 1201. In some cases, the application of the adhesive may be performed by an adhesive device (eg, an automated dispensing dispenser), and the adhesive device may be part of the manufacturing system 10 . Next, referring to the lower view of Figure 6D, the substrate 20 is coupled to the film 120 via adhesive to form a substrate strip (or substrate strip). When the substrate 20 is coupled to the membrane 120 , the substrate 20 covers the corresponding membrane opening 1201 , and the membrane opening 1201 exposes a majority of the corresponding substrate 20 .

In other embodiments, the width of the overlap (measured in a direction perpendicular to the perimeter of the film opening) between the substrate 20 and the portion of the film 120 adjacent the film opening may differ from 1 mm. For example, the overlap width may be from 0.3 mm to 3 mm, or from 0.4 mm to 2 mm, or from 0.5 mm to 1.5 mm.

As discussed above, membrane 120 may be configured to couple to frame 101 . In some cases, membrane 120 may be coupled directly to frame 101 . In some embodiments, coupling may be achieved using an adhesive (eg, silicone-based adhesive). The adhesive may be applied by the manufacturing system 10, or the film 120 may be contacted with the adhesive on its surface (eg, at one or more locations along an outer peripheral portion of the film 120). In other cases, membrane 120 may be indirectly coupled to frame 101 . For example, as shown in FIG. 6E , in some cases, each membrane 120 may be coupled to a subframe 610 , and the subframe 610 is coupled to the frame 101 .

In some cases, after mounting substrate 20 to membrane 120 and after membrane 120 is coupled to frame 101, an isolation grid may be coupled to membrane 120 to isolate the substrate or group of substrates. Referring to FIG. 6F , an example of an isolation grid device 160 having a frame 1601 and a grid opening 1602 defined by an isolation grid 1603 disposed on the frame 1602 is shown. Isolation grid device 160 is configured for placement over 120 film 120 in an overlay configuration (where the major plane of isolation grid device 160 is parallel to the major plane of the film) such that isolation grid 1603 is disposed between adjacent substrates 20 , the isolation frame device 160 may optionally further include a detachable mechanism for detachably connecting the frame 1601 to the frame 101 and/or to the membrane 120 . Frame 1601 and isolation barrier 1603 may be made of metal or alloy, such as aluminum alloy. The surfaces of the frame 1601 and the isolation barrier 1603 may be coated with a plasma-resistant coating for protecting the surfaces of the frame 1601 and the isolation barrier 1603 (eg, preventing the surfaces of the frame 1601 and the isolation barrier 1603 from being corroded by plasma).

Although one isolation grid arrangement 160 is shown, during use there may be two isolation grid arrangements 160 disposed on opposite sides of the membrane 120 . Isolation grid device 160 may be coupled to frame 101 and/or membrane 120 .

During a deposition process performed by fabrication system 10 , conductive material is deposited over opposing surfaces of substrate 20 to form a conductive layer on the front/first side of substrate 20 (front conductive layer, and on the back/first side of substrate 20 back conductive layer above the second side). For example, the front conductive layer may include conductive material extending across the front surface of the first substrate, across the area between the first substrate and the adjacent (second substrate) and across the front surface of the second substrate. Isolation grid device 160 prevents conductive material from being deposited onto opposing surfaces of film 120 at locations between substrates 20 because these locations are covered by isolation grid 1603 of isolation barrier device 160 . After forming the conductive layers on the opposing surfaces of the substrate 20, the isolation grid devices 160 on the opposing sides of the film 120 may then be removed.

When isolation barrier 1603 is subsequently removed, the deposited conductive material on isolation barrier 1603 on opposite sides of membrane 120 between adjacent processed substrates is also removed along with isolation barrier 16023. As a result, the conductive layers on both sides of the treated substrate are broken down into separate smaller conductive layers for each treated substrate. Therefore, the initial electrical connection provided by the front conductive layer between the substrates 20 is broken, and the initial electrical connection provided by the back conductive layer between the substrates 20 is also broken. The substrate 20 may then be electrically connected in different ways. For example, a front bus bar formed on a front conductive layer of a first processed substrate (first substrate) may be electrically connected to a front bus bar formed on a front conductive layer of the first processed substrate. The rear bus bar on the back conductive layer of the adjacent second processed substrate (second substrate) (first substrate). In some cases, the material of isolation barrier 1603 may be a conductive material such that the plasma utilized during the fabrication method may be continuously directed. This facilitates continuous deposition on the surface of the substrate to form a conductive layer of desired thickness. The isolation grid arrangement 160 may also help achieve a uniform thickness of the conductive layer formed on each substrate.

It should be noted that the isolation grid device 160 is not limited to the configuration shown, and in other embodiments, the isolation grid device 160 may have other configurations. For example, in other embodiments, isolation grid device 160 may be configured as one or more tapes (sizes and/or shapes) for placement between adjacent substrates 20 . During use, the tape is placed on the membrane 120 between the substrates 20. It may be that a first tape is placed on a first surface of film 120 and a second tape is placed on a second surface of film 120 (opposite the first surface). The tape prevents conductive material from being deposited onto opposing surfaces of film 120 between substrates 20. After the conductive layers are formed on the opposite surfaces of the substrate 20, the tape is removed to break the conductive layers on each side into separate smaller conductive layers for the respective processed substrate 20.

In some cases, FIG. 6H illustrates a method of coupling substrate 20 to membrane 120. As shown in (a) in Fig. 6H, the frame 101 is prepared. Next, as shown in (b) of FIG. 6H , the first film 120 is coupled to the upper and lower edges of the frame 101 , and it can be seen from the figure that the first film 120 is strip-shaped. Then, as shown in (c) in FIG. 6H , the second film 120 is vertically coupled at the opening of the frame 101 . It can be seen from the figure that the second film 120 is in the shape of a strip and intersects the first film 120 at 90°. . In this way, a film opening is formed through the first film 120 and the second film 120 . It can be seen from the figure that the second film 120 is evenly distributed, so that the formed film openings 1201 are of equal size. As shown in (d) of FIG. 6H , an adhesive is applied to the film opening 1201 formed by the film 120 , and the substrate 20 is coupled to the film 120 through the adhesive to form a substrate strip (or substrate strip). When the substrate 20 is coupled to the membrane 120, the substrate 20 covers the corresponding membrane opening 1201, and the substrate 20 covers the area exposed by the membrane opening 1201. Compared with the method shown in Figure 6D above, the method of coupling the substrate to the film shown in Figure 6H avoids cutting the film to form film openings, so it can save more film material and help reduce production costs.

In some cases, two isolation grids 160 are provided for two opposite sides of the frame 120 to isolate the substrate 20 before placing the frame 120 within the preparation station 107 . Specifically, the first isolation grid device 160 is disposed on the first surface of the film 120 to isolate the substrate 20 coupled to the first surface of the film 120, and the second isolation grid device 160 is disposed on the second surface (together with the first surface of the film 120). surfaces facing each other) to isolate the space behind the respective wafers 20. The frame 120, together with the two isolation grids 160, is then transported to a different station of the manufacturing system 10 for processing the substrates. After processing the substrate, the processed substrate is output to storage station 112 along with frame 120 and isolation grid 160 .

In some embodiments, frame 101 optionally includes one or more mechanical connectors configured to couple to one or more isolation grid devices 160 . In some non-limiting examples, the mechanical connector may be a screw, a clamp, a snap-fit connector, a friction coupler, a clip, or the like.

In other cases, the frame 120 carrying the substrate 20 but not the isolation grid device 160 may be inserted into the preparation station 107 . In this case, the manufacturing system 10 may provide the load-bearing isolation grid device 160 after the frame 120 is inserted into the preparation station 107 . For example, one or more isolation grid devices 160 may be provided before/in/after the front film station 102, before/in/after the back film station 103, in the buffer station 110, or during magnetron sputtering. Station 106 is coupled to framework 101 . After the magnetron sputtering station 106 has formed the front and back conductive layers on the respective front and back surfaces of the processed substrate, the isolation grid device (S) 160 may then be separated from the frame 101 . Removing the isolation grid device 160 from the frame 101 breaks down the front conductive layer into a separate smaller front conductive layer for the corresponding substrate, and also breaks down the back conductive layer into a separate smaller back conductive layer for the corresponding substrate. , as discussed similarly.

In other embodiments, isolation grid device 160 is optional and manufacturing system 10 is not required to process substrate 20 . If isolation grid arrangement 160 is not disposed between substrates 20 , the front and rear conductive layers will extend over the area between adjacent substrates 20 . In this case, the front conductive layer can be broken down into separate smaller front conductive layers for the corresponding substrate 20 using laser equipment. Similarly, a laser device or a separate laser device may also be used to break down the back conductive layer into separate smaller back conductive layers for respective substrates 20 . By controlling the energy level of the laser, the removal depth can be well controlled, so that the front conductive layer and the back conductive layer between adjacent substrates 20 can be removed without damaging the film 120 .

As discussed previously, an adhesive may be applied to the film 120 when attaching the substrate to the film 120 . In some cases, some of the adhesive may extend to areas on film 120 between the substrates. In this case, the adhesive at this area may be removed from the surface of the film 120 of the substrate before the isolation grid device 160 is disposed on the film 120 . Such a technique will prevent isolation grid device 160 from adhering to membrane 120 . In an alternative technique, adhesive is applied only to areas of the film 120 that are configured to engage the substrates 20, thereby providing areas of the film 120 between the substrates 20 without adhesive. In another alternative technique, if some of the adhesive extends to areas on the film 120 between the substrates 20, adhesive tape can be placed over those areas to cover the adhesive (where the adhesive tape is The mixture side is in contact with the adhesive on film 120). In other embodiments, another film can be placed over the area to cover the adhesive. In one embodiment, the substrate 20 can be coupled to the first film 120 and the second film 120 can be adhered to the first film 120 to cover the area between the substrates 20 which can include adhesive. The first film 120 may have a plurality of film openings, and the second film 120 may also have a plurality of film openings respectively corresponding to the film openings of the first film 120 . The film opening of the second film 120 may be sized to accommodate the corresponding substrate 20 coupled to the first film 120 . The film opening of the first film 120 may be smaller in size than the film opening of the second film 120 because the first film 120 needs to provide some area around the film opening to allow the substrate 20 to couple to the film opening.

It is noted that the isolation grid device 160 is not limited to the example of the configuration shown, and the isolation grid device 160 may have other configurations. For example, as shown in FIG. 6G , in other embodiments, isolation grid device 160 may have isolation grids configured to isolate groups of substrates 20 .

Film station

As discussed above, film station 102/film station 103 is configured to deposit one or more layers onto the surface of substrate 20. The one or more layers (or films) may include an I layer and an N layer. In other cases, the layers may include I-layers and P-layers. Figure 7 shows a top view of the film station 102/film station 103, specifically showing the film station 102/film station 103 having a first electrode 102a and a second electrode 102b in use. Operating position for substrates carried by frame 101 for processing; Figure 8 is a front view of the film station 102/103 of Figure 7; Figure 9 shows a top view of the film station 102/103, particularly in a non-operated position the first electrode 102a and the second electrode 102b.

As shown in Figures 7 and 8, the first electrode 102a and the second electrode 102b of the membrane station 102/103 are located on opposite sides of the frame 101. The first electrode 102a and the second electrode 102b may move toward the transport track 1012 or toward the frame 101 to form an enclosed space covering the substrate 20 to be processed. The movement of the first electrode 102a and the second electrode 102b may be achieved by one or more driving devices in the manufacturing system 10. When the first electrode 102a and the second electrode 102b are in their respective operating positions, an enclosed space is formed covering the substrate 20 and the first electrode 102a and the second electrode 102b are operated to deposit one or more layers to the substrate 20 on the front surface. The distance between the first electrode 102a and the substrate 20 can be adjusted to meet different processing requirements.

In some embodiments, the first electrode 102a (eg, showerhead) can be moved independently relative to the front housing to adjust the processing gap. The front housing may be grounded and may be placed in contact with the frame 101 to form a closed loop for the plasma (ground return). The second electrode 102b (e.g., a heater) can be moved to be in close proximity to the membrane 120 but not contact the membrane 120 (e.g., this can be achieved by using a ceramic pin to ensure a small but fixed gap therebetween), preventing the heater from contacting the membrane 120 Frame to avoid heater heating the frame. In some cases, the structure coupled to the second electrode 102b may contact the frame 101 to provide support and seal the frame 101 against the front housing.

As shown in Figure 1A, the front film station 102 is configured to form a layer on the front surface of the substrate, and the back film station 103 is configured to form a layer on the back surface of the substrate, wherein the substrate is carried The frames 101 of sheets are transferred to different film stations 102/103. Therefore, the deposition sources associated with the front film station and the back film station 102 are respectively located on opposite sides of the transport path 100 , and the back film station 103 has the same configuration as the front film station 103 because the front film station 102 The back film station 103 is configured to operate on the opposite surface of the substrate, except that the electrodes 102a/102b of the back film station 103 are reversed (compared to the configuration of the front film station 102). The configuration of the back film station 103 is the same as that of the front film station 102. The configuration of film station 102 is the same. Therefore, when the substrate is being processed (when the back side of the substrate faces the second electrode 102b of the front film station 102), the front side of the substrate faces the first electrode 102a of the front film station 102, and while the substrate is being transported After arriving at the back film station 103, the front side of the substrate faces the second electrode 102b of the back film station 103 (the back side of the substrate faces the first electrode 102a of the back film station 103).

In some embodiments, the electrodes 102a, 102b of the thin film station 102/103 may not be configured with deposited thin films. The type of gas filled in the processing station determines the type of thin film layer that is deposited. In traditional HIJ type PECVD, an I layer is usually deposited on both sides of the substrate before depositing the dopant layer (N or P) to passivate the exposed silicon surface in time to prevent oxidation or contamination of the dopants. In this embodiment, the deposition of the I layer on both sides of the substrate can occur in a relatively short period of time (by sequentially arranging the I layers on both sides of the substrate). In this way, the deposition of the intrinsic layer and the doped layer are The waiting time is shortened. Another advantage is that if the dry-etch texturing is done in situ and then deposited with PECVD (no air gets in), there is little chance of oxide formation on the new silicon surface, and therefore, the cell's performance is more consistent.

In some embodiments, the electrodes 102a/102b of the thin film station 102/103 may be configured to form a back intrinsic layer (I layer) on the back side of the substrate 20, and a back doped layer (I layer) on the back side of the substrate 20. For example, N layer or P layer)). In other embodiments, the thin film station 102/103 may include a back intrinsic station and a back doping station, wherein the back intrinsic station is configured to form a back intrinsic layer (I layer), and the back doping station is configured For forming a back doping layer (eg, N layer or P layer) on the back surface of the substrate 20 . In this case, the back intrinsic station can have electrodes dedicated to forming the I layer (as shown in Figure 7), and the back doping station can also have electrodes dedicated to forming the doped layer (as shown in Figure 7 Show).

In some cases, the first electrode 102a of the membrane station 102/103 may include a gas showerhead. In one embodiment, only the gas injection head is movable and a bellows is provided on the periphery of the gas injection head to achieve sealing. In another embodiment, the housing defining the cavity of the membrane station 102/103 and the gas shower head may be moved independently to adjust the processing distance (eg, gap).

In the membrane station 102/103 of Figure 7, the gas distribution plate serves as the power supply electrode and the heater serves as the ground electrode, where the heater may be movable or fixed. In some embodiments, thin film station 102/103 may include a PECVD chamber.

As shown in FIG. 9 , when material deposition is not performed, the first electrode 102 a and the second electrode 102 b move away from each other and away from the frame 101 . In this configuration, the frame 101 can be transported along the transmission path 100 to another processing station. The processing chamber in Figure 9 includes a central column or bracket through which the heater base is moved. In another embodiment, the housing defining the chamber and gas showerhead of the membrane station 102/103 in Figure 9 can be moved independently to adjust the processing distance (eg, gap).

In other embodiments, the film station 102/103 may have other configurations. For example, Figures 10A, 10B, and 10C show a processing station with four pillars surrounding the heater base that may provide More uniform pressure, allowing the heater to form a gas seal with the upper part of the chamber. In another embodiment, shown in Figures 10A, 10B and 10C, the housing defining the chamber and gas shower head of the membrane station 102/103 can be moved independently to adjust the processing distance (eg, gap). Another film station 102 is shown in Figure 10A. The film station 102 of Figure 10A is similar to the film station 102 of Figure 7, except that the film station 102 of Figure 10A has heaters supported at the four corners of the heater (rather than in the middle). Supporting the heater at four corners is advantageous as this allows forces to be applied around the perimeter of the heater. The configuration of thin film stations 102/103 shown in Figure 10A also allows for RF return on the grounded portion at the front chamber body and allows for the formation of a semi-seal to contain reactions in the confined space between the upper and lower electrodes sexual gas. Semi-hermetic means the reactive gases are contained within the chamber, with the pumping port also inside. External purge gas can be pushed within this volume through some cracks/grooves/openings in the frame 101, heater and mechanical ground contacts.

Figure 10B shows two film stations 102/103, each having the configuration shown in Figure 10A. In the embodiment shown, each film station is in processing mode. When in processing mode, the housings of each thin film station on opposite sides of the substrate 20 are moved towards the frame 101 carrying the substrate 20, one housing having a heater and the other housing having a spray head. The showerhead is then operated to deposit material onto substrate 20.

Figure 10C shows the film station 102/103 of Figure 10B in transfer mode. When in transfer mode, the housing of each film station on the opposite side of the substrate 20 moves away from the frame 101 and carries the substrate 20 . The frame 101 carrying the substrate 20 can then be transported out of the film station.

In some embodiments, thin film station 102 can be configured to form an intrinsic layer on a first side of a respective substrate, and thin film station 103 can be configured to form an intrinsic layer on a second side of a respective substrate (opposite the respective first side). ) forms an intrinsic layer on it.

In other embodiments, thin film station 102 can be configured to form a doped layer (eg, an N layer or a P layer) on a first side of a corresponding substrate, and thin film station 103 can be configured to form a doped layer (eg, an N layer or a P layer) on a first side of a corresponding substrate. Doped layers (eg, N layer or P layer) are formed on two sides (opposite to the corresponding first side).

Magnetron sputtering station

As shown in FIG. 1A , the magnetron sputtering station 106 includes a first magnetron sputtering device 106a and a second magnetron sputtering device 106b, wherein the first magnetron sputtering device 106a faces the substrate (substrate) to be processed. The front surface of the second magnetron sputtering device 106b faces the back surface of the substrate (substrate) being processed. Therefore, the first magnetron sputtering device 106 a and the second magnetron sputtering device 106 b are located on opposite sides of the transport path 100 . The first magnetron sputtering device 106a is configured to form a first conductive layer on the front surface of the processed substrate, and the second magnetron sputtering device 106b is configured to form a first conductive layer on the back surface of the processed substrate (with A second conductive layer is formed on the first surface (opposite).

FIG. 11 is a schematic structural diagram of the magnetron sputtering apparatus 106a/106b of FIG. 1A, particularly showing the magnetron sputtering apparatus 106a/106b with an open shutter 106c. Figure 12 is a schematic structural diagram of the magnetron sputtering apparatus 106a/106b, specifically showing that the magnetron sputtering apparatus 106a/106b does not deposit material because the shutter 106c is closed (i.e., the physical shielding of the shutter 106c prevents the sputtered material from reaching the substrate) . In particular, when shutter 106c is open, particles from magnetron sputtering apparatus 106a (or magnetron sputtering apparatus 106b) can reach the surface of the processed substrate (FIG. 11). When shutter 106c is closed, particles from magnetron sputtering apparatus 106a or magnetron sputtering apparatus 106b cannot reach the surface of the processed substrate (Fig. 12).

During use, the frame 101 carrying the substrate 20 (with the intrinsic and doped layers formed thereon) is transported to the first magnetron sputtering apparatus 106a. The shutter 106c of the first magnetron sputtering apparatus 106a is opened to allow particles to be sputtered toward the front surface of the substrate 20, and then a front conductive layer is formed on the front surface of the substrate. The frame 101 carrying the substrate 20 is then transferred to the second magnetron sputtering apparatus 106b. The shutter 106c of the second magnetron sputtering apparatus 106b is opened to allow particles to be sputtered toward the backside of the substrate 20, and then a backside conductive layer is formed on the backside of the substrate.

In other embodiments, instead of forming the conductive front and back conductive layers on the front and back surfaces of the substrate 20 , respectively, the magnetron sputtering apparatus 106 a / 106 b may be arranged opposite to each other, thereby allowing for the formation of conductive front and rear conductive layers on the substrate 20 , respectively. A front conductive layer and a back conductive layer are formed simultaneously on the front surface and the back surface.

In some embodiments, the front conductive layer is formed first, and the back conductive layer is formed. In other embodiments, the back conductive layer is formed first, and the front conductive layer is formed. It should be noted that the terms "front" and "back" are used to refer to two opposite sides of a planar object (eg, substrate, module, etc.). The front conductive layer may be the first conductive layer and the back conductive layer may be the second conductive layer, or vice versa.

In some embodiments, the front conductive layer provided by magnetron sputtering apparatus 106a may be an ITO layer and may have conductive material connected to multiple substrates. Additionally, the back conductive layer provided by magnetron sputtering apparatus 106b may also be an ITO layer and may have conductive material connected to multiple substrates. Because the substrate is connected to membrane 120, the conductive layers on each side are formed to have a uniform configuration across multiple substrates. The conductive material is then broken down into individual conductive portions of the respective substrates, for example by removal of the separate substrates and/or by isolation grid devices of the laser.

In some embodiments, the front conductive layer may extend to the edge of the front surface of the substrate. Furthermore, in some embodiments, the back conductive layer may extend to a position on the back surface of the substrate away from an edge of the second surface of the substrate, such that an end of the back conductive layer is aligned with an edge of the second surface of the substrate. the gap between. This gap reduces the risk of the front conductive layer (eg, ITO layer) contacting the back conductive layer (eg, ITO layer) to create a short circuit. In some embodiments, the gap between the end of the back conductive layer and the edge of the substrate may be achieved by covering a peripheral portion of the second surface of the substrate. Thus, the back conductive layer extends to the edge of the film opening (which exposes the second surface of the substrate). In other embodiments, the front conductive layer may extend onto the front surface of the substrate away from the edge of the substrate, resulting in a gap between the end of the front conductive layer and the edge of the front surface of the substrate.

Substrate removal and frame preparation

As discussed with reference to item 182 in Figure IB, after the substrate 20 carried by the frame 101 is processed into its respective modules, the modules (which are coupled together by the membrane 120) are then removed from the frame 101. As shown in Figure 13, the middle substrate area of film 120 is cut. The cut portion of film 120 (eg, the first portion) becomes part of module 30, which also includes the substrate (processed substrate 20). The substrates are joined together through the first (cut) portion of film 120.

It should be noted that the substrate does not need to be removed from the cut-out portion of film 120 and will become part of the solar cell being formed. In particular, modules 30 (including substrates connected by cutout films 120) can be connected to other modules 30, and/or can undergo plastic encapsulation to form solar cells.

As shown in FIG. 13 , after removing the first portion of the film 120 , the remaining (second) portion 40 of the film 120 remains attached to the peripheral portion 1010 of the frame 101 . To prepare the frame 101 for processing the next set of substrates, the remaining portion 40 of the film 120 is removed. The new film 120 is then coupled to the frame 101 for the fabrication of the next solar cell. Therefore, the frame 101 can be utilized multiple times. This has the benefit of reducing manufacturing costs.

Solar battery

Referring to FIG. 14 , to form the solar cell 50 , a first plastic layer 502 and a second plastic layer 503 may be deposited on opposite surfaces of the module 30 . The first plastic layer 502 and the second plastic layer 503 may be plastic sealing layers. In one embodiment, the first plastic layer 502 and the second plastic layer 503 may be corresponding EVA films. The first glass 501 and the second glass 504 may also be placed on opposite sides of the module 30 to form the solar cell 50 .

As discussed above, module 30 includes cutout membrane 120 that becomes part of solar cell 50 . The cutting film 120 has a plurality of film openings covered by respective substrates (the substrate 20 on which the intrinsic layer and the doped layer are formed), and these film openings are connected together through the cutting film 120 .

In some cases, each substrate of module 30 has a first intrinsic layer (I layer) and an N layer on a first I layer, where the first I layer and N layer together may be considered a first (or Front) film layer. Each substrate of the module 30 also has a second intrinsic layer (I layer) and a P layer on the second I layer, where the second I layer and the P layer together can be considered a second (or rear) thin film layer. . In some embodiments, the first I-layer and the second I-layer may be made of amorphous silicon. Furthermore, in some embodiments, the N layer may be a doped layer including amorphous silicon and/or crystalline silicon doped with N-type ions, and the P layer may be a doped layer including P-type ions doped with Ionic amorphous silicon and/or crystalline silicon.

In some cases, solar cell 50 may be formed by connecting multiple modules 30 together to form an assembly. FIG. 15A shows a module 30 having a severing film 120 and a plurality of substrates 20 (processed substrates having intrinsic layers and doped layers) connected together by the severing films 120 . Before connecting module 30 to another module 30, bus bars may be formed on opposite sides of module 30 (as similarly discussed with reference to item 181 of Figure IB). In some embodiments, the bus bar is configured to collect and transport charge from the solar cell. In the example shown, a first set of bus bars is formed on a first surface of module 30 , with the bus bars extending in parallel and to a first edge of module 30 . A second set of bus bars is formed on a second surface (opposite the first surface) where the bus bars extend parallel and to a second edge of the module 30 (opposite the first edge). The first set of bus bars and the second set The bus bars are parallel to each other. In other embodiments, the first set of bus bars and the second set of bus bars may form a non-zero angle relative to each other.

Figure 15B shows two modules 30a/30b coupled together to form assembly 32. As shown in Figure 15B, the second module 30a overlaps the first module 30b along the side. Specifically, the second set of bus bars extends at the rear side of the second module 30b.

It should be noted that the assembly 32 is not limited to having two modules 30 coupled to each other, and the assembly 32 may have other numbers of modules 30 . Figure 15C shows twelve modules 30 coupled together to form an assembly 32, each module 30 having six substrates. Each module 30 has a first side that overlaps a first adjacent module 30 (where the first set of bus bars (eg, top bus bars) extends), and also has a second side that overlaps a second adjacent module 30 (the first set of bus bars (e.g., top bus bars) extends). Two sets of bus bars (e.g., bottom bus bars extending).

In some embodiments, because the top busbar of one module 30 is aligned with the bottom busbar of the adjacent module 30 , when two modules 30 overlap each other, the top busbar of one module 30 will align with the bottom busbar of the adjacent module 30 . Bottom Bus Bar Electrical Contact In other embodiments, adhesive may or may not be required, and adjacent modules 30 may simply overlap each other.

After multiple modules 30 are coupled to each other to form assembly 32 , assembly 32 may be further processed to form solar cells 50 . Figure 16 shows the mounting of polymer film (eg EVA film) and glass to an assembly 32 having a plurality of modules 30. The polymer film is first disposed on the opposite surface of the component 32, and then the glass is disposed on the opposite side to accommodate the polymer film and the component 32. The thickness of the solar cell 50 can be between 50 microns and 300 microns, for example , between 100 microns and 180 microns.

In the embodiment corresponding to FIGS. 15A to 16 described above, multiple modules 30 (each module 30 having a single row of processed substrates) are coupled together through an overlay stack. In some embodiments, module 30 may have multiple rows of processed substrates coupled to a common membrane 120 . In such cases, adjacent rows of processed substrates (substrates) on the same film 120 may be electrically connected to each other. Figure 17 shows a technique for electrical connection of two modules coupled to each other through thin films. As shown in Figure 17, the film 120 connects the first substrate 20a and the second substrate 20b. The first substrate 20a is coupled to the membrane 120 and covers the first membrane opening 1201a. The second substrate 20b is coupled to the film 120 and connected to the second film opening 1201b.

The first substrate 20a has been processed and includes an I layer and an N layer on a first surface of the first substrate 20a, and it also includes a second surface (opposite the first surface) of the first substrate 20a I layer and P layer on top. The first substrate 20a also includes a front conductive layer and a back conductive layer.

Similarly, the second substrate 20b has been processed and includes the I layer and the N layer on the first surface of the second substrate 20b, and it also includes the I layer and the N layer on the second surface of the second substrate 20b (similar to the first I layer and P layer on opposite surfaces). The second substrate 20b also includes a front conductive layer and a back conductive layer. In some embodiments, each conductive layer may be an ITO layer.

As shown in Figure 17, a first set of bus bars (eg, top bus bars) 36a and a second set of bus bars (eg, bottom bus bars) 38a are formed by printing on opposing surfaces of the first substrate 20a. Similarly, a first set of bus bars (eg, top bus bars) 36b and a second set of bus bars (eg, bottom bus bars) 38b are formed by printing on opposing surfaces of the second substrate 20b. In some embodiments, the first set of bus bars 36a is connected to the surface of the front conductive layer (eg, ITO layer) and the second set of bus bars 38a is connected to the surface of the back conductive layer (eg, ITO layer).

To connect the top bus bar 36a of the first substrate 20a to the bottom bus bar 38b of the adjacent second substrate 20b, a set of vias 39 may be formed, such as by 20a, 20b (also called substrate). Next, conductive lines may be formed in the vias (and optionally on the surface of the substrate) to electrically connect the top bus bar 36a of the first substrate 20a to the bottom bus bar 38b of the second substrate 20b.

In one embodiment, vias are formed in the film 120 and then the top bus bars 36a/36b are formed on the top surface of the substrate 20a/20b (eg, using printing techniques). Top bus bar 36a may overlap hole 1201a, and top bus bar 36b may overlap hole 1201b, such that the material of bus bars 36a/36b will sink into holes 1201a/1201b respectively. Material can pass completely through holes 1201a/1201b. Next, the substrate 20a/20b can be turned over. Bottom bus bars 38a/38b are then formed on the bottom surface of substrate 20a/20b (eg, using printing techniques). Bottom bus bar 38b overlaps hole 1201a to connect to top bus bar 36a. In some cases, the material of bottom bus bar 38b may be sunk into hole 1201a (eg, if the material of top bus bar 36a only partially extends within hole 1201a) to connect to top bus bar 36a. In other cases, the material of bottom bus bar 38b may not sink into hole 1201a (eg, if the material of bus bar 36a extends through hole 1201a) to connect to top bus bar 36a. Bottom bus bar 38a is connected to the top bus bar of the previous substrate (not shown) in front of substrate 20a. Hole 1201b connects top bus bar 36b of substrate 20b to the bottom bus bar of the next substrate (not shown). In some cases, each bus bar may be a printed silver wire.

method

Figure 18 illustrates a substrate processing method 1800 in accordance with some embodiments. Substrate processing method 1800 includes:

S1802: Provide a frame provided with a frame opening, a film configured to be coupled to the frame and cover at least a portion of the frame opening, and couple the substrate to the film provided with the film opening.

S1804, maintain the vertical orientation of the frame, the film and the substrate.

S1806: When the substrate is vertically oriented, form a first I layer on the first surface of the substrate.

S1808: When the substrate is vertically oriented, a second I layer is formed above the second surface of the substrate, and the second surface of the substrate is opposite to the first surface.

S1810: When the substrate is vertically oriented, form an N layer above the first I layer of the substrate.

S1812, when the substrate is vertically oriented, form a P layer on the second I layer.

Optionally, in method 1800, the first I layer, the N layer, the second I layer and the P layer are formed by performing plasma enhanced chemical vapor deposition (PECVD).

Optionally, method 1800 further includes: forming a first conductive layer over the first surface of the substrate; and forming a second conductive layer over the second surface of the substrate.

Optionally, in method 1800, the first conductive layer includes a first ITO layer and the second conductive layer includes a second ITO layer.

Optionally, method 1800 further includes: forming a first conductive line on the first surface of the substrate while the substrate is coupled to the film, the first conductive line being connected to the surface of the first conductive layer; and while the substrate is coupled to A second conductive line is formed on the second surface of the substrate while the film is formed, and the second conductive line is connected to the surface of the second conductive layer.

Optionally, in method 1800, the first conductive line extends beyond the first edge of the substrate.

Optionally, in method 1800, the second conductive line extends beyond a second edge of the substrate opposite the first edge of the substrate.

Optionally, in method 1800, the substrate, at least a portion of the film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and the second conductive layer together form a first module; and wherein the method further includes connecting the first module and the second module to form an assembly.

Optionally, in method 1800, an adhesive is used to connect the first module and the second module.

Optionally, in method 1800, the second module includes a second substrate, a first conductive line over a first surface of the second substrate, and a second conductive line over a second surface of the second substrate. , the second surface of the second substrate is opposite to the first surface of the second substrate; and wherein when the first module and the second module are connected, the first surface of the first substrate The first conductive line is electrically connected to the second conductive line on the second surface of the second substrate.

Optionally, method 1800 also includes: placing a first polymer film and a second polymer film on opposing surfaces of the component; and clamping the first polymer film between the first glass and the second glass, the component and the second polymer film. Two polymer films.

Optionally, in method 1800, the first module includes a solar cell module.

Optionally, the method 1800 further includes texturing the first surface and the second surface of the substrate when the substrate is in a vertical orientation, wherein the first I layer, the N layer, the second I layer and the P layer are formed before Perform texturing actions.

Optionally, the method 1800 also includes moving the frame/film/substrate together to a plurality of processing stations, wherein the moving action is performed with the substrate vertically oriented.

Optionally, method 1800 also includes removing the film from the frame.

Optionally, in method 1800, the substrate is used to fabricate a solar module, and wherein the method further includes coupling another membrane to the frame, and coupling another substrate to the membrane to fabricate another membrane. A solar module.

Optionally, in method 1800, the peripheral portion of the membrane is coupled to and forms a seal with the portion of the membrane that defines the membrane opening.

Optionally, in method 1800, the membrane includes additional membrane openings, wherein the additional substrate is coupled to the membrane covering the additional membrane openings.

Optionally, method 1800 also includes providing texturing on the opposing surface of the substrate, which may be accomplished using dry etching.

Optionally, method 1800 further includes, prior to the act of providing texturing, coupling the film with a first isolation grid, wherein the first isolation grid is coupled to the first surface of the film.

Optionally, method 1800 further includes coupling the membrane to a second isolation grid, wherein the second isolation grid is coupled to a second surface of the membrane opposite the first surface of the membrane.

Optionally, in method 1800, the first isolation grid is configured to isolate the substrate from an additional substrate that is also coupled to the membrane, with at least a portion of the first isolation grid being located between the substrate and the additional substrate.

Optionally, the method 1800 further includes forming a first conductive layer over the N layer and forming a second conductive layer over the P layer, wherein the first conductive layer is over the substrate and spans between the substrate and the additional substrate. spaced, and extended over additional substrates.

Optionally, the method 1800 further includes removing the first isolation grid, wherein removing the first isolation grid causes portions of the first conductive layer extending over the space between the substrate and the additional substrate to be removed, thereby causing the substrate to The chip is electrically isolated from the attached substrate.

Optionally, method 1800 further includes using a laser device to remove a portion of the first conductive layer spanning the gap between the substrate and the additional substrate.

Optionally, in method 1800, the substrate is processed to form the first module, and the method further includes: using the additional substrate to form a second module; and connecting the conductive lines on the front surface of the first module to the second module. Conductive lines on the second surface are electrically coupled.

Optionally, in method 1800, the act of electrically coupling includes stacking a portion of the second module on a portion of the first module such that the conductive lines on the front surface of the first module are in contact with the conductive lines on the second surface of the second module. Conductive wire contact.

Optionally, in method 1800, the acts of electrically coupling include creating a hole through the thickness of the film at a location between the substrate and the additional substrate; and forming an electrical conductor in the hole.

Manufacturing system variants

Figure 19 shows a variation of the manufacturing system 10 which is identical to the manufacturing system 10 shown in Figure 1A except that it does not include the texturing station 104. In the manufacturing system 10 of Figure 19, there is a first front film station 102 configured to form an I layer on a first side of the substrate, and a second front film station 102 configured to form an N layer on the first side of the substrate. Premembrane Station 102. System 10 also has a first backcoat station 103 configured to form an I layer on the second side of the substrate, and a second backcoat station 103 configured to form a P layer on the second side of the substrate. In some embodiments, the first front film station 102 and the first back film station 103 may be configured as microcrystalline layers of N-doped layers and P-doped layers. Additionally, in some embodiments, the I layer may be an amorphous silicon (SI:H) layer. During use of the system 10 of Figure 19, substrates carried by the frame 101 are textured prior to entering the preparation chamber 107. In some cases, texturing is performed on the front and back surfaces of the substrate by dry etching in a dry etch chamber. In other cases, texturing is performed on the front and back surfaces of the substrate by wet etching.

The use of the terms "first", "second", "third" and "fourth" does not imply any particular order but is included to identify individual elements. Furthermore, the use of the terms first, second, etc. do not imply any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another element. Note that the terms first and second are used here and elsewhere for labeling purposes and are not intended to indicate any particular spatial or temporal ordering. Furthermore, the marking of a first element does not imply the presence of a second element, and vice versa.

Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims (8)

1. A solar cell component, comprising: A first module. The first module has a first substrate. The first substrate has a first surface and a second surface opposite to the first surface. The first module also has a first substrate disposed on the first surface. a first conductive line on the first surface of a substrate, and a second conductive line disposed on the second surface of the first substrate; A second module. The second module has a second substrate. The second substrate has a first surface and a second surface opposite to the first surface. The second module also has a second substrate disposed on the first surface. a first conductive line on the first surface of the two substrates, and a second conductive line disposed on the second surface of the second substrate; and A film including a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to a first surface of the film, wherein the first substrate covers the The first film opening, the second substrate covers the second film opening; wherein the film includes a through hole located between the first substrate and the second substrate; and wherein the first conductive line of the first module is electrically connected to the second conductive line of the second module via a conductive line located in the through hole of the film. 2. The solar cell module according to claim 1, wherein the first module further includes a first I layer disposed on the first surface of the first substrate, disposed on the first A second I layer on the second surface of a substrate, an N layer disposed on the first I layer, and a P layer disposed on the second I layer. 3. The solar cell module according to claim 2, further comprising a first polymer film and a second polymer film, wherein the first module, the second module and the film are located on the between the first polymer film and the second polymer film. 4. The solar cell module according to claim 3, further comprising a first glass and a second glass, wherein the first polymer film and the second polymer film are disposed between the first glass and the second glass. between the second glass. 5. A solar cell component, characterized in that it includes: A first module, including a first film provided with a first film opening, and a first substrate covering the first film opening, wherein the first substrate has a first surface and a first surface opposite to the first surface. a second surface, wherein the first module further has a first conductive line disposed on the first surface of the first substrate, and a first conductive line disposed on the second surface of the first substrate. the second conductive line; and The second module includes a second film provided with a second film opening, and a second substrate covering the second film opening, wherein the second substrate has a first surface and a second surface opposite to the first surface. a second surface, wherein the second module further has a first conductive line disposed on the first surface of the second substrate, and a first conductive line disposed on the second surface of the second substrate. second conductive wire; Wherein, a part of the first conductive line of the first module extends beyond the edge of the first substrate and is located on the first film; wherein a portion of the second conductive line of the second module extends beyond an edge of the second substrate and is located on the second film; and Wherein, a portion of the second film overlaps a portion of the first film such that the first conductive line of the first module is electrically coupled to the second conductive line of the second module. 6. The solar cell assembly according to claim 5, wherein the first module further includes a first I layer disposed on the first surface of the first substrate, and the I layer is disposed on the first surface of the first substrate. an N layer above the first substrate, a second I layer disposed on the second surface of the first substrate, and a P layer disposed on the second I layer. 7. The solar cell module according to claim 6, further comprising a first polymer film and a second polymer film, wherein the first module, the second module and the film are located on the between the first polymer film and the second polymer film. 8. The solar cell module according to claim 7, further comprising a first glass and a second glass, wherein the first polymer film and the second polymer film are located between the first glass and the second glass. between the second glass.