CN117207082A - Wafer polishing pad - Google Patents

Abstract

The invention provides a wafer polishing pad. The wafer polishing pad includes: a plurality of grooves formed on the wafer polishing pad and extending to the inside of the wafer polishing pad, and the plurality of grooves are concentric from the center of the wafer polishing pad outward. Circularly arranged; a plurality of channels, each channel extending outward from the center of the wafer polishing pad and passing through a plurality of the grooves. The above technical solution is to set channels that run through multiple grooves on the surface of the wafer polishing pad, so that each groove is connected with the adjacent groove, keeping the grinding fluid in the groove as long as possible, and reducing the amount of grinding fluid. waste. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating adjacent grooves, the by-products generated in the middle of the polishing pad and in the grooves can be discharged from the grooves as quickly as possible, reducing wafer grinding damage and improving wafer grinding efficiency.

Description

Wafer polishing pad

Technical field

The invention relates to the field of semiconductors, and in particular to a wafer polishing pad.

Background technique

As the size of semiconductor devices decreases day by day, the deposition process of multi-layer interconnection or relatively large filling depth causes excessive undulations on the wafer surface, causing difficulty in focusing the photolithography process, weakening the ability to control line width, and reducing the To ensure the consistency of line width across the entire wafer, the industry has introduced chemical mechanical polishing (CMP) to planarize the wafer surface. After the semiconductor manufacturing process enters the sub-micron (sub-micron) field, chemical mechanical polishing has become an indispensable manufacturing process technology. In the chemical mechanical polishing process, the chemical mechanical polishing device has become one of the important equipment in the semiconductor process.

Chemical mechanical polishing uses chemical etching and mechanical force to planarize silicon wafers or other substrate materials during processing. Please refer to FIGS. 1 to 2 . FIG. 1 is a schematic structural diagram of a chemical mechanical polishing machine in the prior art, and FIG. 2 is a schematic structural diagram of a polishing pad in the prior art. As shown in FIG. 1 , the grinding equipment includes: a grinding fluid delivery arm 11 , a grinding head 12 , a grinding pad 13 , a grinding pad adjuster (Diamond Disk) 14 and a grinding platform 15 . The wafer is carried under the polishing head 12 , and a certain pressure performs a polishing action on the polishing pad 13 , accompanied by the output of the polishing fluid and the adjustment of the polishing pad adjuster 14 . The grinding head 12 moves at a certain angular speed driven by an electric motor. The rotation speeds of the grinding head 12 and the grinding pad 13 are basically the same. The grinding fluid is transported at a certain flow rate through the transmission function of the grinding fluid delivery arm 11 To the surface of the polishing table 13 , the polishing liquid is distributed on the surface of the polishing pad 13 through the rotational centrifugal force of the polishing table 13 and the swinging effect of the polishing liquid delivery arm 11 . The polishing pad 13 is made of multi-layer rubber, its surface is made of polyurethane fiber, and its bottom is sticky for sticking to the surface of the polishing platform 15. As shown in Figure 2, the surface of the polishing pad 13 is composed of a plurality of It is composed of concentric grooves 131 for storing and distributing grinding fluid. The polishing pad adjuster 14 is used to smooth the polishing fluid and modify the surface of the polishing pad 13 to maintain the roughness of the surface of the polishing pad 13 .

However, as the polishing pad 13 is consumed, the polishing pad 13 will become flatter and have serious edge wear, thereby failing to achieve a normal polishing rate and uniformity (Uniformity, UN for short) of wafer polishing. ) and wafer defects (Defect). The depth of the groove 131 on the surface of the polishing pad 13, that is, the problem of edge smoothing is common in the industry. The pressure and mechanical rotation of the polishing head 12 and the polishing pad adjuster 14 on the surface of the polishing pad 13 will The surface of the polishing pad 13 is damaged, and the edge of the polishing pad 13 suffers greater loss due to the boundary effect. Please refer to FIGS. 3A to 3B , wherein FIG. 3A is a schematic diagram of the groove structure of the polishing pad before use, and FIG. 3B is a schematic diagram of the groove structure of the polishing pad after being used for a period of time. As shown in FIG. 3A , the depth of the groove 131 of the polishing pad 13 is the same in the middle and at the edge before use of the polishing pad 13 . As the polishing pad 13 wears, as shown in FIG. 3B , the The depth of the trench 131 is relatively shallow at the edges. In addition, after the polishing pad 13 is worn, a part of by-products 132 (By-product) will be generated in the middle edge groove 131 of the polishing pad 13 , thereby causing product defects to the wafer to a certain extent. In addition, due to the high-speed rotation of the polishing pad 13 and the action of centrifugal force, most of the polishing fluid will be thrown out. The consumption of polishing fluid is also a considerable expense in the chemical mechanical polishing industry.

Therefore, how to solve the problem of edge grinding of the polishing pad, increase the service life of the polishing pad, improve the quality of wafer polishing, and save polishing costs are currently problems that need to be solved.

Contents of the invention

The technical problem to be solved by the present invention is how to solve the edge grinding problem of the polishing pad, increase the service life of the polishing pad, improve the wafer polishing quality, save the polishing cost, and provide a wafer polishing pad.

In order to solve the above problems, the present invention provides a wafer polishing pad, including: a plurality of grooves formed on the wafer polishing pad and extending to the inside of the wafer polishing pad, and the plurality of grooves are formed from the wafer polishing pad. The wafer polishing pad is arranged in a concentric circle from the center outward; a plurality of channels are arranged, and each channel extends outward from the center of the wafer polishing pad and penetrates a plurality of the grooves.

In some embodiments, the trench near the edge of the wafer polishing pad is a closed trench.

In some embodiments, each of the channels extends through all of the trenches.

In some embodiments, the channel is a linear channel.

In some embodiments, the width of each channel gradually increases outward from the center of the wafer polishing pad.

In some embodiments, the width of each channel gradually decreases outward from the center of the wafer polishing pad.

In some embodiments, the width of each channel remains the same outward from the center of the wafer polishing pad.

In some embodiments, the channel is a spiral channel.

In some embodiments, the width of each channel gradually increases outward from the center of the wafer polishing pad.

In some embodiments, the number of grooves is 25-30, and the number of channels is 6-10.

The above technical solution is to set up channels that penetrate multiple grooves on the surface of the wafer polishing pad, so that each groove is connected to the adjacent grooves. Compared with the prior art, the polishing fluid can only be deposited and circulated. Within the groove on the surface of the polishing pad, and the polishing pad adjuster is used to smooth the polishing fluid. The improved polishing pad of the present invention allows the polishing fluid to circulate not only in this groove, but also to the adjacent grooves. In the groove, keep the grinding fluid in the groove as long as possible to reduce the waste of grinding fluid. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating adjacent grooves, the by-products generated in the middle of the polishing pad and in the grooves can be discharged from the grooves as quickly as possible, reducing wafer grinding damage and improving wafer grinding efficiency.

It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit the present invention. Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the authorized specification.

Description of the drawings

In order to more clearly illustrate the technical solutions in the specific embodiments of the present invention, the following will briefly introduce the drawings that need to be used in the description of the specific embodiments. Obviously, the drawings in the following description are only some specific embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 is a schematic structural diagram of a chemical mechanical grinding machine in the prior art.

Figure 2 is a schematic top view of the structure of a polishing pad in the prior art.

Figure 3A is a schematic diagram of the groove structure of the polishing pad before use.

Figure 3B is a schematic diagram of the groove structure of the polishing pad after being used for a period of time.

FIG. 4 is a schematic structural diagram of the first embodiment of the wafer polishing pad according to the present invention.

FIG. 5 is a schematic structural diagram of a second embodiment of the wafer polishing pad according to the present invention.

FIG. 6 is a schematic structural diagram of a third embodiment of the wafer polishing pad according to the present invention.

FIG. 7 is a schematic structural diagram of a fourth embodiment of the wafer polishing pad according to the present invention.

FIG. 8 is a schematic structural diagram of a fifth embodiment of the wafer polishing pad according to the present invention.

FIG. 9 is a schematic structural diagram of a sixth embodiment of the wafer polishing pad according to the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of the present invention.

Please refer to FIG. 4 , which is a schematic structural diagram of the first embodiment of the wafer polishing pad according to the present invention. As shown in FIG. 4 , the wafer polishing pad 40 includes: a plurality of grooves 41 and a plurality of channels 42 . The plurality of grooves 41 are formed on the wafer polishing pad 40 and extend into the interior of the wafer polishing pad 40 . The plurality of grooves 41 form concentric circles outward from the center of the wafer polishing pad 40 arrangement. Each of the channels 42 extends outward from the center of the wafer polishing pad 40 and penetrates a plurality of the trenches 41 .

The above technical solution is to set up channels that penetrate multiple grooves on the surface of the wafer polishing pad, so that each groove is connected to the adjacent grooves. Compared with the prior art, the polishing fluid can only be deposited and circulated. Within the groove on the surface of the polishing pad, and the polishing pad adjuster is used to smooth the polishing fluid. The improved wafer polishing pad of the present invention allows the polishing fluid to not only circulate in the groove, but also circulate through the channel. In the adjacent grooves, keep the grinding fluid in the groove as long as possible to reduce the waste of grinding fluid. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, penetrating adjacent trenches can also allow by-products produced in the middle of the wafer polishing pad and in the trenches to be discharged from the trenches as quickly as possible, reducing wafer grinding damage and improving wafer polishing efficiency.

In this embodiment, the trench 41 close to the edge of the wafer polishing pad 40 is a closed trench. As shown in FIG. 4 , the edge trench 411 close to the edge of the wafer polishing pad 40 is not penetrated by the channel 42 and is a closed trench, which can effectively alleviate the loss of polishing fluid and ensure the edge. grinding rate to avoid insufficient edge grinding during wafer grinding.

In this embodiment, the channel 42 is a linear channel. Compared with the prior art, the polishing fluid can only be deposited and circulated in the grooves on the surface of the polishing pad, and the polishing pad adjuster is used to spread the polishing fluid. The improved wafer polishing pad of the present invention 40 allows the grinding liquid to not only circulate in the groove 41, but also circulate into the adjacent grooves 41 through the channel 42, keeping the grinding liquid in the groove 41 as long as possible and reducing grinding. Liquid wasted. This avoids damage to the wafer polishing pad 40 caused by frequent adjustment of the polishing fluid by the polishing pad adjuster, and reduces the generation of by-products. In addition, by penetrating the adjacent trenches 41, the by-products generated in the middle of the wafer polishing pad 40 and in the trench 41 can be discharged from the trench 41 as quickly as possible, thereby reducing wafer polishing damage and improving wafer polishing efficiency. Grinding efficiency.

In this embodiment, the width of each channel 42 remains the same from the center of the wafer polishing pad 40 outward. In this embodiment, the width of the channels 42 is the first width W1. The first width W1 ranges from 15 mils to 23 mils. The channels 42 are equally wide everywhere, so that the grinding liquid can not only circulate in the grooves 41, but also flow into the adjacent grooves 41, which increases the smooth flow rate of the grinding liquid and distributes the grinding liquid more evenly. , thus making the wafer grinding rate stable and the surface flatter.

In some embodiments, the surface of the wafer polishing pad is made of polyurethane fiber for contacting and polishing the wafer surface. The number of grooves 41 is 25-25, the depth of the grooves 41 is 25-35 mils, and the width of the grooves 41 is 15-23 mils; wherein, mil A unit of wafer size, 1 mil is 10 ^-3 inches. There are 6 to 10 channels 42 .

Please refer to FIG. 5 , which is a schematic structural diagram of a second embodiment of the wafer polishing pad according to the present invention. The difference between the embodiment shown in FIG. 5 and the embodiment shown in FIG. 4 is that the width of each channel 52 of the wafer polishing pad 50 in this embodiment gradually increases outward from the center of the wafer polishing pad 50 . increase. In this embodiment, the channel 52 has a first width W1, a second width W2, and a third width W3 in order from the center of the wafer polishing pad 50 outward. The first width W1 ranges from 15 mils to 23 mils, the second width W2 ranges from 20 mils to 28 mils, and the third width W3 ranges from 25 mils to 35 mils. . In this implementation, the width of the channel 52 close to the center of the wafer polishing pad 50 is narrow, which can effectively slow down the flow of polishing liquid to the outer ring groove 51 and play a role in saving polishing liquid; close to the wafer polishing pad The width of the channel 52 at the edge of the wafer is wide, and the rate at which the polishing fluid flows to the outer ring of the groove 51 is fast, which helps to meet the process requirements that require a high polishing rate outside the wafer.

In this embodiment, the trench 51 close to the edge of the wafer polishing pad 50 is a closed trench. As shown in FIG. 5 , the edge groove 511 close to the edge of the wafer polishing pad 50 is not penetrated by the channel 52 and is a closed groove, which can effectively alleviate the loss of polishing fluid and ensure the edge. grinding rate to avoid insufficient edge grinding during wafer grinding.

In this embodiment, the channel 52 is a linear channel. Compared with the prior art, the polishing fluid can only be deposited and circulated in the grooves on the surface of the polishing pad, and the polishing pad adjuster is used to spread the polishing fluid. The improved wafer polishing pad of the present invention 50 allows the grinding liquid to not only circulate in the groove 51, but also circulate into the adjacent groove 51 through the channel 52, keeping the grinding liquid in the groove 51 as long as possible, reducing the Waste of grinding fluid. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating the adjacent trenches 51, the by-products generated in the middle of the wafer polishing pad 50 and in the trench 51 can be discharged from the trench 51 as quickly as possible, thereby reducing wafer grinding damage and improving wafer polishing efficiency. Grinding efficiency.

Please refer to FIG. 6 , which is a schematic structural diagram of a third embodiment of the wafer polishing pad according to the present invention. The difference between the embodiment shown in FIG. 6 and the embodiment shown in FIG. 4 is that the width of each channel 62 of the wafer polishing pad 60 in this embodiment gradually increases outward from the center of the wafer polishing pad 60 . decrease. In this embodiment, the channel 62 has a third width W3, a second width W2, and a first width W1 in order from the center of the wafer polishing pad 60 outward. The first width W1 ranges from 15 mils to 23 mils, the second width W2 ranges from 20 mils to 28 mils, and the third width W3 ranges from 25 mils to 35 mils. . In this implementation, the width of the channel 62 close to the center of the wafer polishing pad 60 is wide, and the rate at which the polishing fluid flows to the outer ring groove 61 is fast, which helps to meet the process requirements that require a high polishing rate in the center of the wafer; The width of the channel 62 near the edge of the wafer polishing pad 60 is narrow, which can effectively slow down the flow of polishing liquid to the outer ring groove 61 and save polishing liquid.

In this embodiment, the trench 61 close to the edge of the wafer polishing pad 60 is a closed trench. As shown in FIG. 6 , the edge trench 611 close to the edge of the wafer polishing pad 60 is not penetrated by the channel 62 and is a closed trench, which can effectively alleviate the loss of polishing fluid and ensure the edge. grinding rate to avoid insufficient edge grinding during wafer grinding.

In this embodiment, the channel 62 is a linear channel. Compared with the prior art, the polishing fluid can only be deposited and circulated in the grooves on the surface of the polishing pad, and the polishing pad adjuster is used to spread the polishing fluid. The improved wafer polishing pad of the present invention 60 allows the grinding liquid to not only circulate in the groove 61, but also circulate into the adjacent grooves 61 through the channel 62, keeping the grinding liquid in the groove 61 as long as possible and reducing grinding. Liquid wasted. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating the adjacent trenches 61, the by-products generated in the middle of the wafer polishing pad 60 and in the trench 61 can be discharged from the trench 61 as quickly as possible, thereby reducing wafer grinding damage and improving wafer polishing efficiency. Grinding efficiency.

Please refer to FIG. 7 , which is a schematic structural diagram of a fourth embodiment of the wafer polishing pad according to the present invention. The difference between the embodiment shown in FIG. 7 and the embodiment shown in FIG. 4 is that each channel 72 of the wafer polishing pad 70 in this embodiment penetrates all the trenches 71 . As shown in FIG. 7 , in this embodiment, the trench 71 close to the edge of the wafer polishing pad 70 is an open trench, and the edge trench 711 close to the edge of the wafer polishing pad 70 is The penetration of the channel 52 helps to reduce by-products in the edge groove 711 of the wafer polishing pad 70 and increase the circulation and discharge of the polishing fluid in the edge groove 711, thereby reducing the number of defects at the edge of the wafer.

In this embodiment, the channel 72 is a linear channel. Compared with the prior art in which the polishing fluid can only be deposited and circulated in the grooves on the surface of the polishing pad, and the polishing pad adjuster is used to spread the polishing fluid, the improved wafer polishing pad 70 of the present invention enables In addition to circulating in this groove 71, the grinding fluid can also flow into the adjacent groove 71 through the channel 72, keeping the grinding fluid in the groove 71 as long as possible and reducing the waste of grinding fluid. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating the adjacent trenches 71 , by-products generated in the middle of the wafer polishing pad 70 and in the trench 71 can be discharged from the trench 71 as quickly as possible, thereby reducing wafer polishing damage and improving wafer polishing efficiency. Grinding efficiency.

In this embodiment, the width of each channel 72 remains the same from the center of the wafer polishing pad 70 outward. In this embodiment, the width of the channels 72 is the first width W1. The first width W1 ranges from 15 mils to 23 mils. The channels 72 are equally wide everywhere, so that the grinding liquid can not only circulate in the grooves 71 but also flow into the adjacent grooves 71 , which increases the smooth flow rate of the grinding liquid and distributes the grinding liquid more evenly. , thus making the wafer grinding rate stable and the surface flatter.

Please refer to FIG. 8 , which is a schematic structural diagram of a fifth embodiment of the wafer polishing pad according to the present invention. The difference between the embodiment shown in FIG. 8 and the embodiment shown in FIG. 7 is that the width of each channel 82 of the wafer polishing pad 80 in this embodiment gradually increases outward from the center of the wafer polishing pad 80 . increase. In this embodiment, the channel 82 has a first width W1, a second width W2, and a third width W3 in order from the center of the wafer polishing pad 80 outward. The first width W1 ranges from 15 mils to 23 mils, the second width W2 ranges from 20 mils to 28 mils, and the third width W3 ranges from 25 mils to 35 mils. . In this implementation, the width of the channel 82 close to the center of the wafer polishing pad 80 is narrow, which can effectively slow down the flow of polishing liquid to the outer ring groove 81 and play a role in saving polishing liquid; close to the wafer polishing pad The width of the channel 82 at the edge 80 is wide, and the rate at which the polishing fluid flows to the outer ring groove 81 is fast, which helps to meet the process requirements that require a high polishing rate outside the wafer. In other embodiments, the width of each channel 82 may also be configured to gradually decrease outward from the center of the wafer polishing pad 80 to meet process requirements requiring a high polishing rate at the center of the wafer. It is also possible to set the width of each channel 82 to first decrease and then increase from the center of the wafer polishing pad 80 , or to set the width of each channel 82 to go from the center of the wafer polishing pad 80 to the outside. First increase and then decrease, and set the channels 82 with different widths to control the flow rate of the grinding liquid in the different grooves 81 to meet the process requirements of different grinding rates.

In this embodiment, the trench 81 close to the edge of the wafer polishing pad 80 is an open trench, and the edge trench 811 close to the edge of the wafer polishing pad 80 is penetrated by the channel 82, so that It helps to reduce by-products in the edge groove 811 of the wafer polishing pad 80 and increase the circulation and discharge of the polishing liquid in the edge groove 811, thereby reducing the number of defects at the edge of the wafer.

In this embodiment, the channel 82 is a linear channel. Compared with the prior art, the polishing fluid can only be deposited and circulated in the grooves on the surface of the polishing pad, and the polishing pad adjuster is used to spread the polishing fluid. The improved wafer polishing pad of the present invention 80 allows the grinding liquid to not only circulate in the groove 81, but also circulate into the adjacent grooves 81 through the channel 82, keeping the grinding liquid in the groove 81 as long as possible and reducing grinding. Liquid wasted. Avoid damage to the polishing pad caused by frequent adjustment of the polishing fluid by the polishing pad adjuster and reduce the generation of by-products. In addition, by penetrating the adjacent trenches 81 , by-products generated in the middle of the wafer polishing pad 80 and in the trench 81 can be discharged from the trench 81 as quickly as possible, thereby reducing wafer polishing damage and improving wafer polishing efficiency. Grinding efficiency.

Please refer to FIG. 9 , which is a schematic structural diagram of a sixth embodiment of the wafer polishing pad according to the present invention. The difference between the embodiment shown in FIG. 9 and the embodiment shown in FIG. 8 is that the channel 92 of the wafer polishing pad 90 in this embodiment is a spiral channel. In this embodiment, the spiral direction of the channel 92 is adapted to the rotation direction of the wafer polishing pad 90, so that the polishing fluid can flow more smoothly on the surface of the wafer polishing pad 90, so that the polishing fluid can effectively Uniform distribution ensures stable grinding rate and reduces product defects. In other embodiments, wave-shaped channels can also be provided to control the flow rate of the grinding fluid so that the grinding fluid can be effectively and evenly distributed to adapt to different process requirements.

In this embodiment, the channel 92 has a first width W1, a second width W2, and a third width W3 in order from the center of the wafer polishing pad 90 outward. The first width W1 ranges from 15 mils to 23 mils, the second width W2 ranges from 20 mils to 28 mils, and the third width W3 ranges from 25 mils to 35 mils. . In this implementation, the width of the channel 92 close to the center of the wafer polishing pad 90 is narrow, which can effectively slow down the flow of polishing liquid to the outer ring groove 91 and play a role in saving polishing liquid; close to the wafer polishing pad The width of the channel 92 at the edge 90 is wide, and the rate at which the polishing fluid flows to the outer ring groove 91 is fast, which helps to meet the process requirements that require a high polishing rate outside the wafer. In other embodiments, the width of each channel 82 may also be configured to gradually decrease outward from the center of the wafer polishing pad 80 to meet process requirements requiring a high polishing rate at the center of the wafer. It is also possible to set the width of each channel 82 to first decrease and then increase from the center of the wafer polishing pad 80 , or to set the width of each channel 82 to go from the center of the wafer polishing pad 80 to the outside. First increase and then decrease, and set the channels 82 with different widths to control the flow rate of the grinding liquid in the different grooves 81 to meet the process requirements of different grinding rates.

In this embodiment, the trench 91 close to the edge of the wafer polishing pad 90 is an open trench, and the edge trench 911 close to the edge of the wafer polishing pad 90 is penetrated by the channel 92, so that It helps to reduce by-products in the edge groove 911 of the wafer polishing pad 90 and increase the circulation and discharge of the polishing liquid in the edge groove 911, thereby reducing the number of defects at the edge of the wafer.

The wafer polishing pads in multiple embodiments of the above technical solution can meet the process requirements of different polishing rates and are suitable for polishing equipment of various sizes such as 6-inch/8-inch/12-inch. Different channel shapes and channel widths are set according to different processes to promote the circulation and even distribution of the grinding fluid, reduce the waste of grinding fluid, and discharge the grinding by-products in the trench as soon as possible, reducing wafer grinding damage and improving wafer grinding. efficiency.

It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiments," "some embodiments," etc., indicate that the described embodiments may include particular features, structures, or characteristics. However, each embodiment may not necessarily include the specific features, structures or characteristics. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in connection with an embodiment, whether or not explicitly described, it is within the knowledge of a person skilled in the relevant art to implement such feature, structure or characteristic in conjunction with other embodiments.

Often, a term can be understood, at least in part, from its usage in the context. For example, the term "one or more" as used herein, depending at least in part on the context, may be used to describe any feature, structure or characteristic in the singular, or may be used to describe any feature, structure or characteristic in the plural. combination. Similarly, terms such as "a," "an," or "the" may equally be understood to express a singular usage or a plural usage, depending at least in part on the context. Additionally, the term "based on" may be understood as not necessarily intended to express an exclusive set of factors, but may instead, also depending at least in part on context, allow for the presence of other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected/coupled" does not only mean that one component is directly coupled to another component, but also refers to that one component is indirectly coupled to another component through an intermediate component.

It should be noted that the terms "including" and "having" and their modifications involved in the document of the present invention are intended to cover non-exclusive inclusion. The terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence, unless the context clearly indicates otherwise. It should be understood that data so used are interchangeable under appropriate circumstances. . In addition, the embodiments and features of the embodiments of the present invention may be combined with each other without conflict. Furthermore, in the above description, descriptions of well-known components and techniques are omitted to avoid unnecessarily obscuring the concepts of the present invention. In the above-mentioned embodiments, each embodiment focuses on its differences from other embodiments, and the same/similar parts between the various embodiments can be referred to each other.

The above are only preferred embodiments of the present invention. It should be noted that those of ordinary skill in the art can also make several improvements and modifications without departing from the principles of the present invention. These improvements and modifications should also be regarded as It is the protection scope of the present invention.

Claims (10)

1. A wafer polishing pad, comprising:

the grooves are formed on the wafer polishing pad and extend into the wafer polishing pad, and the grooves are concentrically distributed outwards from the center of the wafer polishing pad;

and each channel extends outwards from the center of the wafer polishing pad and penetrates through a plurality of grooves.

2. The wafer polishing pad of claim 1, wherein the grooves near the edge of the wafer polishing pad are closed grooves.

3. The wafer polishing pad of claim 1 wherein each of the channels extends through all of the grooves.

4. The wafer polishing pad of claim 1 wherein the channels are linear channels.

5. The wafer polishing pad of claim 4 wherein the width of each channel increases gradually outwardly from the center of the wafer polishing pad.

6. The wafer polishing pad of claim 4 wherein the width of each channel tapers outwardly from the center of the wafer polishing pad.

7. The wafer polishing pad of claim 4, wherein the width of each of the channels remains the same from the center of the wafer polishing pad outward.

8. The wafer polishing pad of claim 1, wherein the channel is a spiral channel.

9. The wafer polishing pad of claim 8, wherein the width of each channel increases gradually outwardly from the center of the wafer polishing pad.

10. The wafer polishing pad of claim 1 wherein the number of grooves is 25 to 30 and the number of channels is 6 to 10.