CN117578092B - Millimeter wave frequency selective surface structure and processing method thereof - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/003—Apparatus or processes specially adapted for manufacturing conductors or cables using irradiation
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Abstract
The invention discloses a millimeter wave frequency selective surface structure and a processing method thereof, wherein the millimeter wave frequency selective surface structure comprises an optically transparent low-loss dielectric substrate, a first optically transparent flexible dielectric film and a second optically transparent flexible dielectric film which are sequentially arranged, and an optically transparent metal resonant layer is arranged between the first optically transparent flexible dielectric film and the second optically transparent flexible dielectric film in a hot pressing way; the light transparent low-loss medium substrate is bonded with the first light transparent flexible medium film through the light transparent adhesive tape; the light transparent metal resonance layer is a wire mesh resonance structure formed by hot pressing or a light transparent conductive oxide resonance structure. The invention can solve the problem of signal interference of millimeter wave frequency in wireless communication, has high optical transparency, low insertion loss, good frequency selectivity, small and exquisite appearance, easy manufacture and great potential in millimeter wave application.
Description
Technical Field
The invention relates to the technical field of new generation information, in particular to a millimeter wave frequency selective surface structure with high visible light transmittance and low loss and a processing method thereof.
Background
Optically transparent technology is considered to be one of the most effective solutions to the problem of communication system integration. The optically transparent electromagnetic device has the advantage of being optically transparent on the basis of realizing the communication function. In general, the implementation of optically transparent devices requires that the dielectric substrate and conductive circuitry be fully or partially optically transparent. Thus, the development of optically transparent devices places new demands on the optical transparency of dielectric substrates. In addition, to achieve complete or partial transparency to the conductive circuitry, researchers have mainly used transparent conductive oxides, such as indium tin oxide and or metallic nanostructures. The use of silver nanowires and copper nanowires or metallic nanostructures is advantageous for optical transparency, while also resulting in increased conductor loss and manufacturing difficulties. Furthermore, there are few optically transparent dielectric substrates available, which have a relatively large dielectric loss tangent in the millimeter wave band, which further deteriorates the performance of the optically transparent device.
A Frequency Selective Surface (FSS) is defined as a periodic array of metal sheets or etched holes that open onto conductive sheets on a dielectric substrate that exhibit bandpass or bandstop responses to electromagnetic waves. Frequency selective surfaces are of great interest due to their remarkable characteristics, such as low cost, low profile and ease of manufacture, and have been widely studied in various applications ranging from microwave to infrared and terahertz bands, including antennas, absorbers, radomes, shielding, and the like. While bandpass frequency selective surfaces can effectively filter out-of-band interfering signals, in-passband signals may also experience large attenuation (or large insertion loss) due to high dielectric and conductor losses, particularly in the millimeter wave and terahertz bands. Conventional bandpass frequency selective surfaces are known to fail to meet the optical transparency requirements. The optical transparent band-pass filter is used as a novel frequency selective surface with excellent performance, not only can isolate and attenuate unwanted signals, but also can be used in wider application scenes according to the optical transparent characteristic of the optical transparent band-pass filter.
Due to limitations of the manufacturing process, the current stage optically transparent conductive films or metallic nanostructures are typically realized on optically transparent dielectric substrates, such as glass, polymethyl methacrylate or acrylic, polyimide (PI), polyethylene terephthalate (PET), polycarbonate, and combinations thereof, which makes the manufacturing freedom of optically transparent frequency selective surfaces worse than traditional opaque frequency selective surfaces, while in-band interpolation losses are also very high.
Disclosure of Invention
The invention provides a high visible light transmittance and low loss millimeter wave frequency selective surface structure and a processing method thereof, which can ensure that the frequency selective surface has excellent characteristics such as high visible light transmittance, low insertion loss, high frequency selective characteristic and the like without damaging a substrate.
A millimeter wave frequency selective surface structure comprises an optically transparent low-loss dielectric substrate, a first optically transparent flexible dielectric film and a second optically transparent flexible dielectric film which are sequentially arranged, wherein an optically transparent metal resonant layer is arranged between the first optically transparent flexible dielectric film and the second optically transparent flexible dielectric film in a hot pressing mode; the light transparent low-loss medium substrate is bonded with the first light transparent flexible medium film through the light transparent adhesive tape; the light transparent metal resonance layer is a wire mesh resonance structure formed by hot pressing or a light transparent conductive oxide resonance structure.
A millimeter wave frequency selective surface structure processing method comprises the following steps:
step S1: single layer opaque periodic metal circuit structure: bonding the optical transparent metal resonant layers arranged between the second optical transparent flexible medium films in a hot pressing way by adopting an optical transparent adhesive, and realizing a single-layer opaque periodic metal circuit structure through a chemical etching process of dry film, development, etching and surface cleaning;
step S2: double-layer opaque periodic metal circuit structure: placing the first light transparent flexible medium film coated with the light transparent glue on the single-layer opaque periodic metal circuit structure in the step S1, and then hot-pressing for 2 minutes under the pressure of 1 Mpa to finally finish the double-layer opaque periodic metal circuit structure;
step S3: high transparency bilayer periodic metal circuit structure: after hot pressing, baking the bonded double-layer opaque periodic metal circuit structure in the step S2 in an oven at 160 ℃ for 2 hours to enable the transparent adhesive to be melted and become transparent under baking, and finally forming the double-layer periodic metal circuit structure with high transparency;
step S4: realization of transparent frequency selective surface structure: the double-layer periodic metal circuit structure of the step S3 is combined with the optically transparent low-loss dielectric substrate by spin coating and ultraviolet irradiation exposure by using an optically transparent ultraviolet curing agent to obtain the low-loss optically transparent frequency selective surface structure.
The invention discloses a surface structure with high visible light transmittance and low loss millimeter wave frequency selection and a processing method thereof, which have the following beneficial effects compared with the prior art:
1) According to the invention, the metal structure is etched on the flexible PET substrate, and the metal structure is bonded by means of photoetching glue, so that the manufacture of the optically transparent low-loss millimeter wave frequency selective surface can be realized under the condition that the high-molecular dielectric substrate is not required to be processed or damaged;
2) The invention develops a manufacturing method for the frequency selective surface of the optically transparent low-loss cycloolefin copolymer dielectric substrate, realizes the application of a new material in millimeter wave devices, and simultaneously, the new material shows a low insertion loss characteristic higher than that of the traditional dielectric material;
3) The invention has larger copper thickness and width to improve the optical transparent frequency selective surface performance, but still keeps higher optical transparency, and compared with the commonly used thin conductor and narrow line width method, the method has the advantages of more economy and easier processing, and simultaneously has better performance;
4) The invention adopts a single resonance structure, combines with the design analysis of a wire mesh process, realizes better low-loss characteristic and optical transparency characteristic than the traditional non-optical transparent frequency selective surface, and can realize the optical transparent low-loss millimeter wave frequency selective surface with excellent frequency selective performance;
5) The invention can solve the problem of signal interference of millimeter wave frequency in wireless communication, has high optical transparency, low insertion loss, good frequency selectivity, small and exquisite appearance, easy manufacture and great potential in millimeter wave application.
Drawings
FIG. 1 is a basic architecture diagram of a frequency selective surface structure of the present invention;
FIG. 2 is a top view of a frequency selective surface structure and a metal resonant layer grid transparentization process diagram according to the present invention;
FIG. 3 is a diagram of a three-dimensional structure of a frequency selective surface structure and a grid transparentization process of a metal resonant layer according to the present invention;
FIG. 4 is a graph of the frequency response of the frequency selective surface structure of the present invention under different subunits;
FIG. 5 is a graph of the frequency response of the frequency selective surface structure of the present invention at different wire mesh linewidths;
FIG. 6 is a graph of simulated and tested millimeter wave transmission for a frequency selective surface structure of the present invention;
FIG. 7 is a graph showing the transmittance of the low loss cycloolefin polymer dielectric substrate and the frequency selective surface structure according to the present invention in the optical band.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings:
the terms referred to in this application are explained first:
1. high light transmittance: the light transmittance is high, namely, the light transmittance is high;
2. low loss: the dielectric material has very low dielectric loss tangent value which reaches one ten thousandth of magnitude;
3. light transparency low loss: and has two characteristics/properties of 'light transparency' and 'low loss'. "optically transparent" is generally referred to as "transparent" or "transparent under visible light"; 'low loss' refers to 'low loss';
4. visible light transmittance: the term "ratio/proportion of visible light transmission" is understood to mean, in particular, the "ratio of visible light remaining after passing through a device after irradiation of the device with visible light";
5. the light is transparent: is commonly referred to as 'transparent' or 'transparent under visible light';
6. opaque: it means ' opaque to visible light ', i.e. after the visible light irradiates a device, the ratio of visible light left after passing through the device is 0, i.e. 100% of visible light does not pass through the device '.
As shown in fig. 1, the millimeter wave frequency selective surface structure comprises an optically transparent low-loss dielectric substrate 1, a first optically transparent flexible dielectric film 2 and a second optically transparent flexible dielectric film 4 which are sequentially arranged, wherein an optically transparent metal resonant layer 3 is arranged between the first optically transparent flexible dielectric film 2 and the second optically transparent flexible dielectric film 4 in a hot pressing manner; the light transparent low-loss medium substrate 1 is bonded with the first light transparent flexible medium film 2 through light transparent glue; the optically transparent metal resonance layer 3 is a wire mesh resonance structure formed by hot pressing, or an optically transparent conductive oxide resonance structure.
The optically transparent low-loss dielectric substrate 1 is low-loss glass, acrylic or low-loss cycloolefin copolymer. The dielectric constant at 22GHz of the millimeter wave band was 2.36, the loss tangent was 0.0009 and the thickness was 1.5 mm.
The first optically transparent flexible dielectric film 2 and the second optically transparent flexible dielectric film 4 are polyethylene terephthalate or polyimide. The first optically transparent flexible dielectric film 2 and the second optically transparent flexible dielectric film 4 were polyethylene terephthalate, which had dielectric constants and loss tangents of 3.2 and 0.003, respectively, and a thickness of 0.045 mm.
As shown in fig. 2, both ends of the optically transparent metal resonance layer 3 are etched with a cross slit structure, the unit length d1 of which is 6 mm, the cross slit length d3 is 4.7 mm, and the cross slit width d2 is 0.6 mm. The number of wire mesh portions N and the wire mesh line width t of the wire mesh portions at the four corners of the cross slit are selected in accordance with the transmittance and the frequency response of the frequency selective surface. As shown in fig. 4 and 5, the abscissa of both graphs is frequency (GHz) and the ordinate of both graphs is transmission loss (dB). In order to obtain a 22GHz frequency selective characteristic, a low pass band insertion loss and a visible light transmittance, the number N of screens is 5 (see fig. 4), and the line width of the screens is 0.04 mm (see fig. 5).
The light transparent metal resonance layer 3 of the invention adopts a cross gap resonance structure with a rectangular ring metal wire mesh structure around, and the thickness is 0.035 milliRice with conductivity of 5.8 x 10 7 S/m。
The light transparent adhesive used for bonding the light transparent low-loss medium substrate 1 and the first light transparent flexible medium film 2 is 9310 ultraviolet curing agent, and the light transparent adhesive and the first light transparent flexible medium film 2 are perfectly bonded through spin coating and exposure.
A millimeter wave frequency selective surface structure processing method comprises the following steps:
step S1: single layer opaque periodic metal circuit structure: bonding the optical transparent metal resonant layers 3 arranged between the second optical transparent flexible medium films 4 by adopting optical transparent adhesive in a hot pressing way, and realizing a single-layer opaque periodic metal circuit structure through a chemical etching process of dry film, development, etching and surface cleaning; resulting in the second optically transparent flexible dielectric film 4+ optically transparent metal resonator layer 3 portion of figure 1.
Step S2: double-layer opaque periodic metal circuit structure: placing the first optically transparent flexible medium film 2 coated with optically transparent adhesive on the single-layer opaque periodic metal circuit structure in the step S1, and then hot-pressing for 2 minutes under the pressure of 1 Mpa to finally finish the double-layer opaque periodic metal circuit structure; the second optically transparent flexible dielectric film 4+ optically transparent metal resonator layer 3+ first optically transparent flexible dielectric film 2 portion of figure 1 is obtained. Corresponding to the upper right hand portion of fig. 3.
Step S3: high transparency bilayer periodic metal circuit structure: after hot pressing, baking the bonded double-layer opaque periodic metal circuit structure in the step S2 in an oven at 160 ℃ for 2 hours to enable the transparent adhesive to be melted and become transparent under baking, and finally forming the double-layer periodic metal circuit structure with high transparency; corresponding to the lower right hand portion of fig. 3.
Step S4: realization of transparent frequency selective surface structure: the double-layer periodic metal circuit structure of step S3 is combined with the optically transparent low-loss dielectric substrate 1 by spin coating and uv irradiation exposure using an optically transparent uv curing agent to obtain a low-loss optically transparent frequency selective surface structure. And obtaining the millimeter wave frequency selective surface structure of the second optical transparent flexible dielectric film 4+optical transparent metal resonant layer 3+first optical transparent flexible dielectric film 2+optical transparent low-loss dielectric substrate 1 in fig. 1.
The invention discloses a millimeter wave frequency selective surface structure with high visible light transmittance and low loss, which comprises an optically transparent low-loss dielectric substrate 1, a first optically transparent flexible dielectric film 2, a second optically transparent flexible dielectric film 4 and an optically transparent metal resonant layer 3 formed by hot pressing the first optically transparent flexible dielectric film 2 and the second optically transparent flexible dielectric film 4, as shown in figures 1, 2 and 3. The optically transparent low-loss dielectric substrate 1 is bonded to the optically transparent flexible dielectric film 2 by an extremely thin optically transparent adhesive. The optically transparent low-loss dielectric substrate 1 needs to satisfy the transparency to visible light and have a small loss tangent in the millimeter wave band, such as a low-loss cycloolefin copolymer. The first optically transparent flexible dielectric film 2 and the second optically transparent flexible dielectric film 4 are required to satisfy the optically transparent property while having flexibility and capable of forming a metal layer such as polyethylene terephthalate (PET) in the middle by hot pressing. The optically transparent metal resonance layer 3 may be a wire mesh resonance structure that can be formed by hot pressing.
In experimental tests, the test of the free space method measuring platform constructed by the vector network analyzer has the Frequency characteristics of the Frequency selective surface with high light transmittance and low loss, the analog and measured Transmission responses of the Frequency selective surface with high light transmittance and low loss at normal incidence, which are very identical to each other, as shown in fig. 6, wherein the abscissa and the ordinate are the Frequency (GHz) and Transmission loss (dB), respectively. As can be seen from the figure, the center frequencies in the measurements (solid line results in fig. 6-Case 3 low loss optical transparent frequency selective surface (Case 3: ll-resin TFSS)) and the Simulation (dashed line results in fig. 6) are almost identical, 21.4 and 21.8 GHz, respectively. Small deviations and inconsistencies in center frequency are mainly due to drift in substrate dielectric constant and errors in device fabrication and measurement. The measured and simulated 3dB bandwidths for the frequency selective surface with high light transmittance and low loss are 6.25 and 5.86 GHz, respectively, 18.47 to 24.72 GHz and 19.08 to 24.94 GHz, respectively. For transmission loss, the simulated peak insertion loss was 0.52 dB, which is better than the measured 0.62 dB.
Further, FIG. 7 accurately measures the visible light transmittance of a high transmittance and low loss frequency selective surface over the wavelength range of 400-700 nm, with the abscissa and ordinate being the measured wavelength (in nanometers) and the corresponding visible light transmittance (in:%). As can be seen from the figure, the average transmittance of this processed cycloolefin copolymer substrate in the visible spectrum is about 85 to 90%, which makes the homemade cycloolefin copolymer substrate a suitable candidate for an optically transparent electronic device. In contrast, the average light transmittance of the high light transmittance and low loss frequency selective surface is about 65%.
Therefore, the invention can realize excellent insertion loss and good optical transparency, has good frequency selectivity, has simple structure and low cost, has huge application prospect, and provides a new method for the next generation millimeter wave frequency selection surface with excellent performance.
Claims (8)
1. The millimeter wave frequency selective surface structure is characterized by comprising an optically transparent low-loss dielectric substrate (1), a first optically transparent flexible dielectric film (2) and a second optically transparent flexible dielectric film (4) which are sequentially arranged, wherein the optically transparent low-loss dielectric substrate (1) is low-loss glass, acrylic or low-loss cycloolefin copolymer; an optical transparent metal resonant layer (3) is arranged between the first optical transparent flexible medium film (2) and the second optical transparent flexible medium film (4) in a hot pressing mode; the light transparent low-loss medium substrate (1) is bonded with the first light transparent flexible medium film (2) through light transparent glue; the light transparent metal resonance layer (3) is a wire mesh resonance structure formed by hot pressing;
the two ends of the optical transparent metal resonant layer (3) are etched with a cross slot structure, the unit length d1 of the cross slot structure is 6 mm, the length d3 of the cross slot is 4.7 mm, and the width d2 of the cross slot is 0.6 mm; the number of wire mesh portions N and the wire mesh line width t of the wire mesh portions at the four corners of the cross slit are selected in accordance with the transmittance and the frequency response of the frequency selective surface.
2. The millimeter wave frequency selective surface structure according to claim 1, characterized in that the optically transparent low loss dielectric substrate (1) has a dielectric constant of 2.36, a loss tangent of 0.0009 and a thickness of 1.5 mm at 22GHz in the millimeter wave band.
3. Millimeter wave frequency selective surface structure according to claim 1, characterized in that the first optically transparent flexible dielectric film (2) and the second optically transparent flexible dielectric film (4) are polyethylene terephthalate or polyimide.
4. A millimeter wave frequency selective surface structure according to claim 3, characterized in that the first optically transparent flexible dielectric film (2) and the second optically transparent flexible dielectric film (4) are polyethylene terephthalate with dielectric constants and loss tangents of 3.2 and 0.003, respectively, and a thickness of 0.045 mm.
5. The millimeter wave frequency selective surface structure of claim 1, wherein the number of screens N is 5 and the screen line width is 0.04 mm at the millimeter wave frequency band of 22 GHz.
6. The millimeter wave frequency selective surface structure of claim 1, characterized in that the optically transparent metallic resonant layer (3) is a cross-slot resonant structure surrounded by a rectangular ring wire mesh structure having a thickness of 0.035 mm and an electrical conductivity of 5.8 x 10 7 S/m。
7. Millimeter wave frequency selective surface structure according to claim 1, characterized in that the optically transparent glue used for bonding the optically transparent low-loss dielectric substrate (1) and the first optically transparent flexible dielectric film (2) is 9310 uv curing agent, both being bonded by spin coating and exposure.
8. A method of processing the millimeter wave frequency selective surface structure of any one of claims 1-7, comprising the steps of:
step S1: single layer opaque periodic metal circuit structure: bonding the optical transparent metal resonant layers (3) arranged between the second optical transparent flexible medium films (4) in a hot pressing way by adopting optical transparent adhesive, and realizing a single-layer opaque periodic metal circuit structure through chemical etching process technologies of dry film, development, etching and surface cleaning;
step S2: double-layer opaque periodic metal circuit structure: placing a first light transparent flexible medium film (2) coated with light transparent glue on the single-layer opaque periodic metal circuit structure in the step S1, and then hot-pressing for 2 minutes under the pressure of 1 Mpa to finally finish the double-layer opaque periodic metal circuit structure;
step S3: high transparency bilayer periodic metal circuit structure: after hot pressing, baking the bonded double-layer opaque periodic metal circuit structure in the step S2 in a 160 ℃ oven for 2 hours to enable the transparent adhesive to be melted and become transparent under baking, and finally forming the double-layer periodic metal circuit structure with high transparency;
step S4: realization of transparent frequency selective surface structure: the double-layer periodic metal circuit structure of the step S3 is combined with the optically transparent low-loss dielectric substrate by spin coating and ultraviolet irradiation exposure by using an optically transparent ultraviolet curing agent to obtain the low-loss optically transparent frequency selective surface structure.
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