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CN117590507A - Blazed grating array structure based on nano-imprint and preparation method and application thereof - Google Patents

Blazed grating array structure based on nano-imprint and preparation method and application thereof Download PDF

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CN117590507A
CN117590507A CN202311582103.9A CN202311582103A CN117590507A CN 117590507 A CN117590507 A CN 117590507A CN 202311582103 A CN202311582103 A CN 202311582103A CN 117590507 A CN117590507 A CN 117590507A
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imprinting
array structure
substrate
grating array
angle
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崔玉双
雍一秋
陈斯
葛海雄
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Nanjing University
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • G02B5/1857Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

The invention provides a blazed grating array structure based on nano imprinting and a preparation method and application thereof. The invention prepares a right-angle grating array structure on an elastic support substrate by adopting a nano imprinting technology to form an elastomer imprinting composite template; then the right angle grating array structure on the elastomer composite template is copied into an imprinting adhesive layer on the quartz glass substrate by utilizing a nano imprinting technology, then the right angle grating array structure is copied into a sacrificial layer on the quartz glass substrate by utilizing a dry etching technology, and then the blazed grating array structure with uniform appearance and stable mechanical property can be simply, conveniently and efficiently obtained by combining a vacuum coating technology and an inclination angle etching technology. The preparation method provided by the invention has the advantages of simple operation, low cost and easy mass production, can simply and efficiently control the blazed angle of the blazed grating by regulating and controlling the technological parameters of the preparation process, and has wide application prospects in the fields of optical elements, integrated optics and the like.

Description

基于纳米压印的闪耀光栅阵列结构及其制备方法和应用Nanoimprint-based blazed grating array structure and its preparation method and application

技术领域Technical field

本发明涉及微纳加工技术领域,尤其涉及一种基于纳米压印的闪耀光栅阵列结构及其制备方法和应用。The invention relates to the field of micro-nano processing technology, and in particular to a nanoimprint-based blazed grating array structure and its preparation method and application.

背景技术Background technique

19世纪20年代,德国物理学家夫琅和费用金属细丝和细螺丝,制成了最早的光栅;此后由于加工技术的发展和精密仪器的需要,微米乃至纳米级的光栅被设计并制造出来。光栅种类很多,按照用途被分为透射式光栅和反射式光栅,按照形状又分为平面光栅和凹面光栅等。In the 1820s, German physicist Fraunhofer made the earliest gratings using metal filaments and screws. Since then, due to the development of processing technology and the need for precision instruments, micron and even nanoscale gratings have been designed and manufactured. . There are many types of gratings. They are divided into transmission gratings and reflection gratings according to their uses. They are also divided into flat gratings and concave gratings according to their shapes.

衍射光栅是单色器和光谱仪等精密仪器中重要的光学元件,通常使用的是平面光栅,该光栅设计简单、易于加工,但是平面光栅的衍射零级与干涉零级位置重合,造成了能量的浪费。具有周期性倾斜结构的闪耀光栅,可以将大部分衍射光集中到单一的非零阶,使衍射和干涉零级分开,从而避免能量浪费,有效解决了平面光栅的这一问题。在超精密仪器中,闪耀光栅既可以作为高效色散元件应用于光谱仪中,也可以作为高效光栅耦合器应用于集成光学中,不仅具有较高的衍射效率,还可以显著提高测量系统的灵敏度、分辨率和测量范围。因此,如何制备出稳定高效的闪耀光栅成为了当前的研究热点。Diffraction grating is an important optical element in precision instruments such as monochromators and spectrometers. Plane gratings are usually used. The grating is simple in design and easy to process. However, the diffraction zero order of the plane grating coincides with the interference zero order, resulting in energy variation. waste. The blazed grating with a periodic tilt structure can concentrate most of the diffracted light into a single non-zero order, separating the diffraction and interference zero orders, thus avoiding energy waste and effectively solving this problem of planar gratings. In ultra-precision instruments, blazed gratings can be used as high-efficiency dispersion elements in spectrometers or as high-efficiency grating couplers in integrated optics. They not only have high diffraction efficiency, but can also significantly improve the sensitivity and resolution of the measurement system. rate and measurement range. Therefore, how to prepare stable and efficient blazed gratings has become a current research hotspot.

目前,制备闪耀光栅的方法主要包括机械刻划、全息离子束刻蚀、湿法刻蚀以及电子束光刻等。其中,机械刻划法和全息离子束刻蚀是目前生产大面积闪耀光栅的主要方法。机械刻划的关键在于金刚石刻刀的角度和精度,但是由于金刚石刀具的曲率半径不能降为零,所以实际制作的光栅上会形成圆角,与理想光栅形貌产生偏差从而影响衍射效率。全息离子束刻蚀的闪耀光栅质量受限于光刻胶掩模的质量,而掩模轮廓取决于光刻胶的曝光和显影条件,同时需要精确控制掩模的高度和占空比,因此在加工过程中很难制造出满足要求的光刻胶掩模。至于其他制备方法,一方面是繁琐耗时的制备过程,另一方面是价格昂贵的制造成本,限制了其在工业化生产中的应用。At present, the methods for preparing blazed gratings mainly include mechanical scribing, holographic ion beam etching, wet etching, and electron beam lithography. Among them, mechanical scribing and holographic ion beam etching are currently the main methods for producing large-area blazed gratings. The key to mechanical scribing lies in the angle and accuracy of the diamond cutter. However, since the radius of curvature of the diamond cutter cannot be reduced to zero, rounded corners will be formed on the actual grating, which will deviate from the ideal grating shape and affect the diffraction efficiency. The quality of blazed gratings in holographic ion beam etching is limited by the quality of the photoresist mask, and the mask profile depends on the exposure and development conditions of the photoresist. At the same time, the height and duty cycle of the mask need to be precisely controlled, so in It is difficult to produce a photoresist mask that meets the requirements during processing. As for other preparation methods, on the one hand, they are cumbersome and time-consuming preparation processes, and on the other hand, they are expensive manufacturing costs, which limit their application in industrial production.

有鉴于此,如何使用操作简单且成本低廉的方法制备闪耀光栅,已成为当前亟待解决的问题。In view of this, how to prepare blazed gratings using a simple and low-cost method has become an urgent problem to be solved.

发明内容Contents of the invention

针对上述现有技术存在的问题,本发明的目的在于提供一种基于纳米压印的闪耀光栅阵列结构及其制备方法和应用。本发明通过将纳米压印技术与刻蚀技术相结合,以简便的操作方法和较低的成本制备了形貌均匀、机械性能稳定的闪耀光栅结构,且该闪耀光栅的闪耀角易于调控,能够用于紫外波段。In view of the problems existing in the above-mentioned prior art, the purpose of the present invention is to provide a nanoimprint-based blazed grating array structure and its preparation method and application. By combining nanoimprint technology and etching technology, the present invention prepares a blazed grating structure with uniform morphology and stable mechanical properties with a simple operating method and low cost. The blazed angle of the blazed grating is easy to control and can For use in the UV band.

为实现上述目的,本发明提供了一种基于纳米压印的闪耀光栅阵列结构的制备方法,包括如下步骤:In order to achieve the above objectives, the present invention provides a method for preparing a blazed grating array structure based on nanoimprinting, which includes the following steps:

S1、采用纳米压印技术,在弹性支撑衬底上制备直角光栅阵列结构,得到弹性体压印复合模板;S1. Use nanoimprint technology to prepare a right-angle grating array structure on an elastic support substrate to obtain an elastomer-imprinted composite template;

S2、在石英玻璃基底上依次涂布牺牲层和压印胶层,得到预处理压印基底;S2. Coat the sacrificial layer and the imprinting adhesive layer on the quartz glass substrate in sequence to obtain a pre-treated imprinting substrate;

S3、采用所述弹性体压印复合模板对所述预处理压印基底进行纳米压印,使所述弹性体压印复合模板上的直角光栅阵列结构压印到所述预处理压印基底的所述压印胶层中,得到第一基底;S3. Use the elastomer imprinting composite template to perform nanoimprinting on the pretreatment imprinting base, so that the right-angle grating array structure on the elastomer imprinting composite template is imprinted onto the pretreatment imprinting base. From the embossing rubber layer, a first base is obtained;

S4、采用干法刻蚀技术,对所述第一基底中的所述压印胶层和所述牺牲层依次进行刻蚀,直至光栅凹槽处暴露出所述石英玻璃基底,得到第二基底;S4. Use dry etching technology to etch the imprinting adhesive layer and the sacrificial layer in the first substrate in sequence until the quartz glass substrate is exposed at the grating groove to obtain a second substrate. ;

S5、采用真空镀膜技术,在所述第二基底的直角光栅阵列结构的表面沉积金属层,然后溶解所述第二基底中的所述牺牲层,得到第三基底;S5. Use vacuum coating technology to deposit a metal layer on the surface of the right-angle grating array structure of the second substrate, and then dissolve the sacrificial layer in the second substrate to obtain a third substrate;

S6、以沉积的所述金属层为掩膜,采用倾角度刻蚀技术对所述第三基底中的所述石英玻璃基底进行刻蚀,并去除所述金属层,得到闪耀光栅阵列结构。S6. Using the deposited metal layer as a mask, use tilt-angle etching technology to etch the quartz glass substrate in the third substrate, and remove the metal layer to obtain a blazed grating array structure.

作为本发明的进一步改进,在步骤S1中,所述弹性体压印复合模板的制备方法包括如下步骤:As a further improvement of the present invention, in step S1, the preparation method of the elastomer imprinted composite template includes the following steps:

S11、在硅衬底表面涂布压印胶,得到预处理硅衬底;S11. Coat imprint glue on the surface of the silicon substrate to obtain a pre-treated silicon substrate;

S12、将弹性支撑衬底覆盖在所述预处理硅衬底表面,待所述弹性支撑衬底充分吸附所述压印胶后,得到预处理压印衬底;S12. Cover the surface of the pre-processed silicon substrate with an elastic support substrate. After the elastic support substrate fully absorbs the imprint glue, a pre-process imprint substrate is obtained;

S13、采用直角光栅硅模板对所述预处理压印衬底进行纳米压印,得到具有直角光栅阵列结构的弹性支撑衬底;S13. Use a right-angle grating silicon template to conduct nano-imprinting on the pre-processed imprint substrate to obtain an elastic support substrate with a right-angle grating array structure;

S14、对所述具有直角光栅阵列结构的弹性支撑衬底进行低表面能处理,得到弹性体压印复合模板。S14. Perform low surface energy treatment on the elastic support substrate with a right-angle grating array structure to obtain an elastomer imprinted composite template.

作为本发明的进一步改进,在步骤S14中,所述低表面能处理在真空环境中进行,所述低表面能处理采用的试剂为全氟烷基氯硅烷;所述低表面能处理的温度为80~95℃;所述低表面能处理的时间为3~5h。As a further improvement of the present invention, in step S14, the low surface energy treatment is performed in a vacuum environment, and the reagent used in the low surface energy treatment is perfluoroalkyl chlorosilane; the temperature of the low surface energy treatment is 80~95℃; the low surface energy treatment time is 3~5h.

作为本发明的进一步改进,在步骤S2中,所述牺牲层的涂布厚度为180~200nm,所述压印胶层的涂布厚度为70~90nm。As a further improvement of the present invention, in step S2, the coating thickness of the sacrificial layer is 180-200 nm, and the coating thickness of the imprinting adhesive layer is 70-90 nm.

作为本发明的进一步改进,在步骤S2中,所述牺牲层的原料为水溶性高分子材料或油溶性高分子材料;所述水溶性高分子材料为聚乙烯醇、聚乙烯基吡咯烷酮中的一种或两种混合,所述油溶性高分子材料为聚甲基丙烯酸甲酯。As a further improvement of the present invention, in step S2, the raw material of the sacrificial layer is a water-soluble polymer material or an oil-soluble polymer material; the water-soluble polymer material is one of polyvinyl alcohol and polyvinylpyrrolidone. One kind or two kinds are mixed, and the oil-soluble polymer material is polymethyl methacrylate.

作为本发明的进一步改进,在步骤S5中,所述金属层中的金属为铬;所述金属层的沉积厚度为110~130nm。As a further improvement of the present invention, in step S5, the metal in the metal layer is chromium; the deposition thickness of the metal layer is 110-130 nm.

作为本发明的进一步改进,在步骤S6中,所述倾角度刻蚀时采用的屏栅电压为350~450V,束流为88~92mA,样品台的倾斜角度为30~60°,刻蚀的时间为12~20分钟。As a further improvement of the present invention, in step S6, the screen grid voltage used in the tilt angle etching is 350~450V, the beam current is 88~92mA, the tilt angle of the sample stage is 30~60°, and the etched The time is 12 to 20 minutes.

作为本发明的进一步改进,在步骤S6中,去除所述金属层的试剂为硝酸铈铵、乙酸和水的混合溶液。As a further improvement of the present invention, in step S6, the reagent for removing the metal layer is a mixed solution of ceric ammonium nitrate, acetic acid and water.

为实现上述目的,本发明还提供了一种基于纳米压印的闪耀光栅阵列结构,该闪耀光栅阵列结构采用上述技术方案中任一技术方案所述的制备方法制备得到。In order to achieve the above object, the present invention also provides a blazed grating array structure based on nanoimprinting. The blazed grating array structure is prepared by using the preparation method described in any of the above technical solutions.

本发明还提供了上述基于纳米压印的闪耀光栅阵列结构在光学元件和集成光学领域中的应用。The invention also provides the application of the above-mentioned nanoimprint-based blazed grating array structure in the fields of optical elements and integrated optics.

本发明的有益效果是:The beneficial effects of the present invention are:

1、本发明提供的基于纳米压印的闪耀光栅阵列结构的制备方法,通过采用纳米压印技术,在弹性支撑衬底上制备直角光栅阵列结构,形成弹性体压印复合模板;然后再利用纳米压印技术,将弹性体复合模板上的直角光栅阵列结构复制到石英玻璃基底上的压印胶层中,再利用干法刻蚀技术将直角光栅阵列结构复制到石英玻璃基底上的牺牲层中,再结合真空镀膜技术和倾角度刻蚀技术,即可简便高效地获得形貌均匀、机械性能稳定的闪耀光栅阵列结构。1. The method for preparing a blazed grating array structure based on nanoimprinting provided by the present invention adopts nanoimprinting technology to prepare a right-angle grating array structure on an elastic support substrate to form an elastomer imprinting composite template; and then utilizes nanoimprinting technology. Imprinting technology copies the right-angle grating array structure on the elastomer composite template into the imprinting adhesive layer on the quartz glass substrate, and then uses dry etching technology to copy the right-angle grating array structure into the sacrificial layer on the quartz glass substrate. , combined with vacuum coating technology and tilt angle etching technology, a blazed grating array structure with uniform morphology and stable mechanical properties can be obtained simply and efficiently.

2、本发明提供的基于纳米压印的闪耀光栅阵列结构的制备方法具有操作简单、成本低、易量产的优点,在光学元件和集成光学等领域有着广阔的应用前景。基于本发明提供的方法,能够通过调控金属层的高度、离子束刻蚀的倾角和刻蚀时间等工艺参数,简单高效地控制闪耀光栅的闪耀角,从而优化参数提高其衍射效率。基于本发明提供的制备方法获得的闪耀光栅阵列结构的闪耀角能够达到7.2°,以便应用于紫外波段。2. The preparation method of the nanoimprint-based blazed grating array structure provided by the present invention has the advantages of simple operation, low cost, and easy mass production, and has broad application prospects in the fields of optical components and integrated optics. Based on the method provided by the present invention, the blaze angle of the blazed grating can be controlled simply and efficiently by regulating the height of the metal layer, the inclination angle of the ion beam etching, the etching time and other process parameters, thereby optimizing the parameters and improving its diffraction efficiency. The blaze angle of the blazed grating array structure obtained based on the preparation method provided by the invention can reach 7.2°, so that it can be applied in the ultraviolet band.

附图说明Description of drawings

图1为本发明提供的基于纳米压印的闪耀光栅阵列结构的制备方法的工艺流程示意图。Figure 1 is a schematic process flow diagram of a method for preparing a blazed grating array structure based on nanoimprinting provided by the present invention.

图2为实施例1中在石英玻璃基底上制备的闪耀光栅阵列结构的SEM图。Figure 2 is an SEM image of the blazed grating array structure prepared on a quartz glass substrate in Example 1.

附图标记Reference signs

1-石英玻璃基底;2-牺牲层;3-压印胶层;4-弹性体压印复合模板;5-金属层。1-Quartz glass substrate; 2-Sacrificial layer; 3-Imprinting adhesive layer; 4-Elastomer embossing composite template; 5-Metal layer.

具体实施方式Detailed ways

为了使本发明的目的、技术方案和优点更加清楚,下面结合附图和具体实施例对本发明进行详细描述。In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be described in detail below with reference to the drawings and specific embodiments.

在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与本发明的方案密切相关的结构和/或处理步骤,而省略了与本发明关系不大的其他细节。Here, it should also be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the solution of the present invention are shown in the drawings, and the details related to the present invention are omitted. Invent other details that are less relevant.

另外,还需要说明的是,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。Additionally, it should be noted that the terms "comprises," "comprises," or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements not only includes those elements, but also It also includes other elements not expressly listed or that are inherent to the process, method, article or equipment.

本发明提供了一种基于纳米压印的闪耀光栅阵列结构的制备方法,其工艺流程示意图如图1所示,包括如下步骤:The invention provides a method for preparing a blazed grating array structure based on nanoimprinting. The process flow diagram is shown in Figure 1, which includes the following steps:

S1、采用紫外纳米压印技术,在弹性支撑衬底上制备直角光栅阵列结构,得到弹性体压印复合模板4;S1. Use UV nanoimprint technology to prepare a right-angle grating array structure on an elastic support substrate to obtain an elastomer imprinted composite template 4;

S2、在石英玻璃基底1上依次涂布牺牲层2和压印胶层3,得到预处理压印基底;S2. Coat the sacrificial layer 2 and the imprinting adhesive layer 3 on the quartz glass substrate 1 in sequence to obtain a pretreated imprinting substrate;

S3、采用弹性体压印复合模板4对预处理压印基底进行纳米压印,使弹性体压印复合模板4上的直角光栅阵列结构压印到预处理压印基底的压印胶层3中,得到第一基底;S3. Use the elastomer imprinting composite template 4 to perform nanoimprinting on the pretreatment imprinting base, so that the right-angle grating array structure on the elastomer imprinting composite template 4 is imprinted into the imprinting adhesive layer 3 of the pretreatment imprinting base. , get the first base;

S4、采用干法刻蚀技术,对第一基底中的压印胶层3和牺牲层2依次进行刻蚀,直至光栅凹槽处暴露出石英玻璃基底1,得到第二基底;S4. Use dry etching technology to etch the imprinting adhesive layer 3 and the sacrificial layer 2 in the first substrate in sequence until the quartz glass substrate 1 is exposed at the grating groove to obtain the second substrate;

S5、采用真空镀膜技术,在第二基底的直角光栅阵列结构的表面沉积金属层5,然后溶解第二基底中的牺牲层2,得到第三基底;S5. Use vacuum coating technology to deposit a metal layer 5 on the surface of the right-angle grating array structure of the second substrate, and then dissolve the sacrificial layer 2 in the second substrate to obtain a third substrate;

S6、以沉积的金属层5为掩膜,采用倾角度刻蚀技术对第三基底中的石英玻璃基底1进行刻蚀,并去除金属层5,得到闪耀光栅阵列结构。S6. Using the deposited metal layer 5 as a mask, use tilt-angle etching technology to etch the quartz glass substrate 1 in the third substrate, and remove the metal layer 5 to obtain a blazed grating array structure.

优选的,在步骤S1中,弹性体压印复合模板4的制备方法包括如下步骤:Preferably, in step S1, the preparation method of the elastomer imprinted composite template 4 includes the following steps:

S11、在硅衬底表面涂布压印胶,得到预处理硅衬底;S11. Coat imprint glue on the surface of the silicon substrate to obtain a pre-treated silicon substrate;

S12、将弹性支撑衬底覆盖在预处理硅衬底表面,待弹性支撑衬底充分吸附所述压印胶后,得到预处理压印衬底;S12. Cover the elastic support substrate on the surface of the pre-processed silicon substrate. After the elastic support substrate fully absorbs the imprint glue, a pre-process imprint substrate is obtained;

S13、采用直角光栅硅模板对预处理压印衬底进行纳米压印,得到具有直角光栅阵列结构的弹性支撑衬底;S13. Use a right-angle grating silicon template to conduct nano-imprinting on the pre-processed imprint substrate to obtain an elastic support substrate with a right-angle grating array structure;

S14、对具有直角光栅阵列结构的弹性支撑衬底进行低表面能处理,得到弹性体压印复合模板4。S14. Perform low surface energy treatment on the elastic support substrate with a right-angle grating array structure to obtain an elastomer imprinted composite template 4.

本发明对于步骤S11中使用的硅衬底中硅的来源没有特殊规定,采用本领域技术人员熟知的硅作为衬底即可。在本发明的一些实施例中,选用的硅衬底优选为p掺杂的n型单面抛光硅片,晶向为<100>,电阻率1-10Ωcm-2,厚度为500±0.3μm。The present invention has no special regulations on the source of silicon in the silicon substrate used in step S11. Silicon well known to those skilled in the art can be used as the substrate. In some embodiments of the present invention, the silicon substrate selected is preferably a p-doped n-type single-sided polished silicon wafer with a crystal orientation of <100>, a resistivity of 1-10Ωcm -2 and a thickness of 500±0.3μm.

在步骤S11中,使用的压印胶可以为纳米压印过程中使用的常规压印胶。在本发明的一些实施例中,将该压印胶优选为紫外固化纳米压印胶,以便通过紫外曝光的方式使压印胶固化。在硅衬底表面涂布压印胶的方式优选为旋涂,在本发明的一些实施例中,旋涂的速度优选为2500~3500转/min,更优选为3000转/min;涂布的时间优选为30~50s,更优选为40s;涂布厚度优选为220~250nm,更优选为220~230nm。In step S11, the imprinting glue used may be a conventional imprinting glue used in the nanoimprinting process. In some embodiments of the present invention, the imprinting glue is preferably a UV-curable nanoimprinting glue, so that the imprinting glue is cured by ultraviolet exposure. The method of coating the imprint glue on the surface of the silicon substrate is preferably spin coating. In some embodiments of the present invention, the speed of spin coating is preferably 2500-3500 rpm, more preferably 3000 rpm; The time is preferably 30 to 50 s, more preferably 40 s; the coating thickness is preferably 220 to 250 nm, more preferably 220 to 230 nm.

在步骤S12中,本发明通过使用弹性支撑衬底对压印胶进行吸附,有利于纳米压印操作的进行。本发明对于使用的弹性支撑衬底的来源没有特殊规定,采用常规市售产品即可。弹性支撑衬底在预处理硅衬底上的吸胶时间优选为6~10min,更优选为8min,以便将压印胶完全填充进弹性支撑衬底中。In step S12, the present invention facilitates the nanoimprinting operation by using an elastic support substrate to adsorb the imprinting glue. The present invention has no special regulations on the source of the elastic support substrate used, and conventional commercially available products can be used. The glue absorption time of the elastic support substrate on the pre-treated silicon substrate is preferably 6 to 10 minutes, more preferably 8 minutes, so that the imprint glue can be completely filled into the elastic support substrate.

在步骤S13中,纳米压印过程优选在氮气氛围下进行,基于选择的紫外固化纳米压印胶,在采用直角光栅硅模板对预处理压印衬底施加一定压力后,在紫外光下曝光4~6min,优选为5min,以便使直角光栅硅模板上的纳米图案复制进预处理压印衬底中,获得具有直角光栅阵列结构的弹性支撑衬底,该弹性支撑衬底上的直角光栅阵列结构的形状和尺寸由直角光栅硅模板直接决定,可以根据需要对直角光栅硅模板进行选择。在本发明的一些实施例中,使用的直角光栅硅模板中的直角光栅阵列结构的线宽、周期和深度分别优选为277.5nm、555nm和110nm。In step S13, the nanoimprinting process is preferably performed under a nitrogen atmosphere. Based on the selected UV-curable nanoimprinting glue, a right-angle grating silicon template is used to apply a certain pressure to the pre-processed imprinting substrate, and then exposed to ultraviolet light for 4 seconds. ~6min, preferably 5min, in order to copy the nano-pattern on the right-angle grating silicon template into the pre-processed imprint substrate to obtain an elastic support substrate with a right-angle grating array structure. The right-angle grating array structure on the elastic support substrate The shape and size are directly determined by the right-angle grating silicon template, and the right-angle grating silicon template can be selected according to needs. In some embodiments of the present invention, the line width, period and depth of the right-angle grating array structure in the right-angle grating silicon template used are preferably 277.5nm, 555nm and 110nm respectively.

在步骤S14中,低表面能处理优选在真空环境中进行,利用全氟烷基氯硅烷作为低表面能试剂对具有直角光栅阵列结构的弹性支撑衬底进行低表面能处理。优选的,在本发明的一些实施例中,在进行上述低表面能处理之前,还对具有直角光栅阵列结构的弹性支撑衬底进行了臭氧处理,以便在弹性支撑衬底上引入羟基。In step S14, the low surface energy treatment is preferably performed in a vacuum environment, and perfluoroalkyl chlorosilane is used as a low surface energy reagent to perform low surface energy treatment on the elastic support substrate having a right-angle grating array structure. Preferably, in some embodiments of the present invention, before performing the above-mentioned low surface energy treatment, the elastic support substrate with the right-angle grating array structure is also subjected to ozone treatment to introduce hydroxyl groups on the elastic support substrate.

在本发明的一些实施例中,低表面能处理时的真空度优选为10-3Torr;全氟烷基氯硅烷优选为1H,1H,2H,2H-全氟癸基三氯硅烷;低表面能处理的温度优选为80~95℃,更优选为85~90℃;低表面能处理的时间优选为3~5h,更优选为4h。如此设置,有利于全氟烷基氯硅烷气化,从而利用得到全氟烷基氯硅烷蒸汽与具有直角光栅阵列结构的弹性支撑衬底表面的羟基结合。In some embodiments of the present invention, the vacuum degree during low surface energy treatment is preferably 10 -3 Torr; the perfluoroalkyl chlorosilane is preferably 1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane; the low surface energy The temperature that can be treated is preferably 80 to 95°C, more preferably 85 to 90°C; the time for low surface energy treatment is preferably 3 to 5 hours, more preferably 4 hours. This arrangement facilitates the vaporization of perfluoroalkyl chlorosilane, thereby utilizing the obtained perfluoroalkyl chlorosilane vapor to combine with the hydroxyl groups on the surface of the elastic support substrate having a right-angle grating array structure.

在步骤S2中,牺牲层2的原料优选为水溶性高分子材料或油溶性高分子材料,其中,水溶性高分子材料优选为聚乙烯醇、聚乙烯基吡咯烷酮中的一种或两种混合,油溶性高分子材料优选为聚甲基丙烯酸甲酯。牺牲层2的涂布方式优选为旋涂。In step S2, the raw material of the sacrificial layer 2 is preferably a water-soluble polymer material or an oil-soluble polymer material, wherein the water-soluble polymer material is preferably one or a mixture of two of polyvinyl alcohol and polyvinylpyrrolidone, The oil-soluble polymer material is preferably polymethylmethacrylate. The coating method of the sacrificial layer 2 is preferably spin coating.

更具体地,在本发明的一些实施例中,旋涂牺牲层2时使用的旋涂试剂为水溶性高分子材料的水溶液或者油溶性高分子材料的油溶液。该水溶液或油溶液中高分子材料的质量浓度优选为2%~4%,更优选为3%。在进行旋涂时,旋涂的速率优选为2500~3500转/min,更优选为3000转/min,旋涂时间优选为35~45s,更优选为40s;牺牲层2的涂布厚度优选为180nm~200nm,更优选为185~190nm。More specifically, in some embodiments of the present invention, the spin coating reagent used when spin coating the sacrificial layer 2 is an aqueous solution of a water-soluble polymer material or an oil solution of an oil-soluble polymer material. The mass concentration of the polymer material in the aqueous solution or oil solution is preferably 2% to 4%, and more preferably 3%. When performing spin coating, the spin coating speed is preferably 2500-3500 rpm, more preferably 3000 rpm, the spin-coating time is preferably 35-45 s, more preferably 40 s; the coating thickness of the sacrificial layer 2 is preferably 180nm to 200nm, more preferably 185 to 190nm.

在步骤S2中,压印胶层3的原料选择方式与步骤S11中压印胶的选择方式一致,在此不再赘述。该压印胶层3的涂布方式也优选为旋涂,该旋涂的速度优选为2500~3500转/min,更优选为3000转/min;涂布的时间优选为30~50s,更优选为40s;该压印胶层3的涂布厚度优选为70~90nm,更优选为70~80nm。In step S2, the raw material selection method of the embossing glue layer 3 is consistent with the selection method of the embossing glue in step S11, and will not be described again here. The coating method of the embossed rubber layer 3 is also preferably spin coating. The speed of the spin coating is preferably 2500-3500 rpm, more preferably 3000 rpm; the coating time is preferably 30-50 s, more preferably The coating thickness of the embossing adhesive layer 3 is preferably 70 to 90 nm, and more preferably 70 to 80 nm.

在步骤S3中,采用弹性体压印复合模板4对预处理压印基底进行纳米压印的方式与步骤S13中的纳米压印方式一致,在此不再赘述。经步骤S3的压印处理后,得到的第一基底即为压印胶层3中具有直角光栅阵列结构的石英玻璃基底。In step S3, the method of nanoimprinting the preprocessed imprinting substrate using the elastomer imprinting composite template 4 is consistent with the nanoimprinting method in step S13, and will not be described again. After the imprinting process in step S3, the first substrate obtained is a quartz glass substrate with a right-angle grating array structure in the imprinting adhesive layer 3.

在步骤S4中,采用干法刻蚀技术对第一基底中的压印胶层3和牺牲层2依次进行刻蚀时,压印胶层3中具有的直角光栅阵列即为掩膜。在本发明的一些实施例中,采用的干法刻蚀技术为电感耦合等离子体刻蚀工艺,对压印胶层3进行刻蚀时采用的气体为分别为O2和CHF3的混合气体,对牺牲层2进行刻蚀时采用的刻蚀气体为纯O2,如此设置,有利于各层刻蚀充分。In step S4, when dry etching technology is used to etch the imprinting adhesive layer 3 and the sacrificial layer 2 in the first substrate in sequence, the right-angle grating array in the imprinting adhesive layer 3 is a mask. In some embodiments of the present invention, the dry etching technology used is an inductively coupled plasma etching process, and the gas used to etch the imprinting rubber layer 3 is a mixed gas of O 2 and CHF 3 respectively. The etching gas used when etching the sacrificial layer 2 is pure O 2 . Such an arrangement is conducive to sufficient etching of each layer.

本发明对于上述刻蚀的路径没有特殊规定,采用本领域技术人员熟知的获得具有直角光栅阵列结构的路径进行刻蚀即可。本发明利用基于纳米压印技术构建的直角光栅阵列结构图案,对压印胶层和牺牲层依次进行刻蚀,得到的第二基底即为牺牲层2中具有直角光栅阵列结构的石英玻璃基底。The present invention has no special regulations on the above-mentioned etching path, and etching can be performed using a path that is well known to those skilled in the art to obtain a right-angle grating array structure. The present invention uses a right-angle grating array structure pattern constructed based on nanoimprint technology to etch the imprinting adhesive layer and the sacrificial layer in sequence. The second substrate obtained is a quartz glass substrate with a right-angle grating array structure in the sacrificial layer 2.

在步骤S5中,采用的真空镀膜技术为在高真空条件下,采用加热蒸发的方式蒸发镀膜材料并使之气化,使粒子飞至基片表面凝聚成膜的技术。在本发明的一些实施例中,沉积的金属层5中的金属优选为铬;该金属层5的沉积厚度优选为110~130nm,更优选为120nm。In step S5, the vacuum coating technology used is a technology that uses heating and evaporation to evaporate and vaporize the coating material under high vacuum conditions, so that the particles fly to the surface of the substrate and condense to form a film. In some embodiments of the present invention, the metal in the deposited metal layer 5 is preferably chromium; the deposition thickness of the metal layer 5 is preferably 110-130 nm, more preferably 120 nm.

在步骤S5中,沉积金属层5后,优选采用溶剂丙酮溶解牺牲层2。In step S5, after depositing the metal layer 5, the sacrificial layer 2 is preferably dissolved using the solvent acetone.

在步骤S6中,采用的倾角度刻蚀技术与常规的离子束刻蚀工艺基本一致,仅将样品台由水平转动刻蚀改为样品台倾角度刻蚀。具体地,在本发明的一些实施例中,进行倾角度刻蚀时采用的屏栅电压优选为350~450V,更优选为350V;束流优选为88~92mA,更优选为90mA;样品台的倾斜角度优选为30~60°,更优选为45°;刻蚀的时间优选为12~20分钟,更优选为15~20分钟。In step S6, the tilt angle etching technology used is basically the same as the conventional ion beam etching process, except that the sample stage is changed from horizontal rotation etching to sample stage tilt angle etching. Specifically, in some embodiments of the present invention, the screen voltage used when performing tilt angle etching is preferably 350-450V, more preferably 350V; the beam current is preferably 88-92mA, more preferably 90mA; the sample stage The tilt angle is preferably 30 to 60°, more preferably 45°; the etching time is preferably 12 to 20 minutes, more preferably 15 to 20 minutes.

在步骤S6中,去除金属层5采用的方式优选为试剂浸泡和超声,以便通过试剂浸泡使金属层5溶解,并利用超声促进金属层5从石英玻璃基底1上脱离。其中,试剂优选为硝酸铈铵、乙酸和纯水组成的混合溶液。在本发明的一些实施例中,该混合溶液中硝酸铈铵、乙酸和纯水的质量比优选为8:22:70。基于该混合溶液,有利于将沉积的金属层5充分去除。In step S6 , the method of removing the metal layer 5 is preferably reagent immersion and ultrasound, so as to dissolve the metal layer 5 through reagent immersion, and use ultrasound to promote the detachment of the metal layer 5 from the quartz glass substrate 1 . Among them, the reagent is preferably a mixed solution composed of ceric ammonium nitrate, acetic acid and pure water. In some embodiments of the present invention, the mass ratio of ceric ammonium nitrate, acetic acid and pure water in the mixed solution is preferably 8:22:70. Based on this mixed solution, it is beneficial to fully remove the deposited metal layer 5 .

基于本发明提供的上述制备方法,能够制备得到基于纳米压印的闪耀光栅阵列结构,该闪耀光栅阵列结构能够应用于光学元件和集成光学领域。Based on the above preparation method provided by the present invention, a blazed grating array structure based on nanoimprinting can be prepared, and the blazed grating array structure can be applied in the fields of optical elements and integrated optics.

并且,基于本发明提供的上述方法,能够通过对直角光栅硅模板的规格选择、对金属层的高度、离子束刻蚀的倾角和刻蚀时间等相关工艺参数进行调控,简单高效地控制闪耀光栅的闪耀角,从而优化参数提高其衍射效率。在本发明的一些实施例中,获得的闪耀光栅的闪耀角能够达到7.2°,可以应用于紫外波段。Moreover, based on the above method provided by the present invention, the blazed grating can be controlled simply and efficiently by selecting the specifications of the right-angle grating silicon template, regulating the height of the metal layer, the inclination angle of the ion beam etching and the etching time and other related process parameters. blaze angle, thereby optimizing parameters to improve its diffraction efficiency. In some embodiments of the present invention, the blaze angle of the obtained blazed grating can reach 7.2°, and can be applied to the ultraviolet band.

下面结合具体的实施例对本发明提供的基于纳米压印的闪耀光栅阵列结构及其制备方法和应用进行说明。The nanoimprint-based blazed grating array structure provided by the present invention and its preparation method and application will be described below with reference to specific examples.

实施例1Example 1

本实施例提供了一种基于纳米压印的闪耀光栅阵列结构的制备方法,包括如下步骤:This embodiment provides a method for preparing a blazed grating array structure based on nanoimprinting, which includes the following steps:

S1、采用紫外纳米压印技术,在弹性支撑衬底上制备直角光栅阵列结构,得到弹性体压印复合模板4,具体包括如下步骤:S1. Use UV nanoimprint technology to prepare a right-angle grating array structure on an elastic support substrate to obtain an elastomer imprint composite template 4, which specifically includes the following steps:

S11、在硅衬底表面涂布压印胶,得到预处理硅衬底。S11. Coat imprint glue on the surface of the silicon substrate to obtain a pre-treated silicon substrate.

其中,硅衬底的规格为:p掺杂的n型单面抛光硅片,晶向为<100>,电阻率1-10Ωcm-2,厚度为500±0.3μm;Among them, the specifications of the silicon substrate are: p-doped n-type single-sided polished silicon wafer, crystal orientation is <100>, resistivity is 1-10Ωcm -2 , and thickness is 500±0.3μm;

压印胶的涂布方式为:以质量浓度10%的紫外纳米压印胶为旋涂试剂,以3000转/min的速率旋涂40s,涂布厚度约为220~250nm。The coating method of the imprint glue is as follows: using UV nanoimprint glue with a mass concentration of 10% as the spin coating reagent, spin coating at a speed of 3000 rpm for 40 seconds, and the coating thickness is approximately 220 to 250 nm.

S12、将弹性支撑衬底覆盖在预处理硅衬底表面,吸胶8min后,使弹性支撑衬底充分吸附压印胶,得到预处理压印衬底。S12. Cover the surface of the pre-treated silicon substrate with the elastic support substrate. After absorbing glue for 8 minutes, allow the elastic support substrate to fully absorb the imprint glue to obtain the pre-treatment imprint substrate.

S13、采用直角光栅硅模板对预处理压印衬底进行纳米压印,得到具有直角光栅阵列结构的弹性支撑衬底。S13. Use a right-angle grating silicon template to conduct nano-imprinting on the preprocessed imprint substrate to obtain an elastic support substrate with a right-angle grating array structure.

其中,采用的直角光栅硅模板中的直角光栅阵列结构的线宽、周期和深度分别优选为277.5nm、555nm和110nm。纳米压印过程在氮气氛围下进行,在采用直角光栅硅模板对预处理压印衬底施加一定压力后,在紫外光下曝光5min,以便使直角光栅硅模板上的纳米图案复制进预处理压印衬底中。Among them, the line width, period and depth of the right-angle grating array structure in the right-angle grating silicon template are preferably 277.5nm, 555nm and 110nm respectively. The nanoimprinting process is carried out in a nitrogen atmosphere. After applying a certain pressure to the pre-processed imprint substrate using a right-angle grating silicon template, it is exposed to ultraviolet light for 5 minutes so that the nano-pattern on the right-angle grating silicon template can be copied into the pre-processed pressure substrate. in the printing substrate.

S14、先对具有直角光栅阵列结构的弹性支撑衬底进行臭氧处理,在弹性支撑衬底上引入羟基;然后在真空度为10-3Torr的真空系统中,利用1H,1H,2H,2H-全氟癸基三氯硅烷对臭氧处理后的具有直角光栅阵列结构的弹性支撑衬底进行低表面能处理,低表面能处理的温度为90℃,处理时间为5h,得到弹性体压印复合模板4。S14. First, perform ozone treatment on the elastic support substrate with a right-angle grating array structure, and introduce hydroxyl groups on the elastic support substrate; then use 1H, 1H, 2H, 2H- in a vacuum system with a vacuum degree of 10 -3 Torr. Perfluorodecyltrichlorosilane was used to perform low surface energy treatment on the ozone-treated elastic support substrate with a right-angle grating array structure. The low surface energy treatment temperature was 90°C and the treatment time was 5 hours to obtain an elastomer imprinted composite template. 4.

该弹性体压印复合模板4中的直角光栅阵列结构与原直角光栅硅模板上的直角光栅阵列结构的参数相同,线宽、周期和深度分别为277.5nm、555nm和110nm。The right-angle grating array structure in the elastomer imprinted composite template 4 has the same parameters as the right-angle grating array structure on the original right-angle grating silicon template, and the line width, period and depth are 277.5nm, 555nm and 110nm respectively.

S2、在石英玻璃基底1上依次涂布牺牲层2和压印胶层3,得到预处理压印基底。S2. Coat the sacrificial layer 2 and the imprinting adhesive layer 3 on the quartz glass substrate 1 in sequence to obtain a pretreated imprinting substrate.

其中,牺牲层2的涂布方式为:以质量浓度为3%的聚甲基丙烯酸甲酯的氯苯溶液为旋涂试剂,以3000转/min的速率旋涂40s,获得涂布厚度为180nm的牺牲层2;Among them, the coating method of the sacrificial layer 2 is: using a chlorobenzene solution of polymethyl methacrylate with a mass concentration of 3% as the spin coating reagent, spin coating at a speed of 3000 rpm for 40 s to obtain a coating thickness of 180 nm sacrificial layer 2;

压印胶层3的涂布方式为:以质量浓度为3%的紫外纳米压印胶为旋涂试剂,以3000转/min的速率旋涂40s,获得涂布厚度为75nm的压印胶层3。The coating method of the embossing adhesive layer 3 is as follows: using UV nanoimprinting adhesive with a mass concentration of 3% as the spin coating reagent, spin coating at a speed of 3000 rpm for 40 s to obtain an embossing adhesive layer with a coating thickness of 75nm. 3.

S3、采用弹性体压印复合模板4对预处理压印基底进行纳米压印,使弹性体压印复合模板4上的直角光栅阵列结构压印到预处理压印基底的压印胶层3中,得到第一基底,即为压印胶层3中具有直角光栅阵列结构的石英玻璃基底。S3. Use the elastomer imprinting composite template 4 to perform nanoimprinting on the pretreatment imprinting base, so that the right-angle grating array structure on the elastomer imprinting composite template 4 is imprinted into the imprinting adhesive layer 3 of the pretreatment imprinting base. , the first substrate is obtained, which is a quartz glass substrate with a right-angle grating array structure in the imprinting adhesive layer 3 .

其中,纳米压印过程在氮气氛围下进行,在采用弹性体压印复合模板4对预处理压印基底施加一定压力后,在紫外光下曝光5min,以便使弹性体压印复合模板4上的直角光栅阵列结构复制进预处理压印衬底中。Among them, the nanoimprinting process is carried out in a nitrogen atmosphere. After applying a certain pressure to the pretreated imprinting substrate using the elastomer imprinting composite template 4, it is exposed to ultraviolet light for 5 minutes, so that the elastomer imprinting composite template 4 can be The rectangular grating array structure is replicated into the preprocessed imprint substrate.

S4、采用电感耦合等离子体刻蚀工艺对第一基底中的压印胶层3和牺牲层2依次进行干法刻蚀,直至光栅凹槽处暴露出石英玻璃基底1,得到第二基底,即为牺牲层2中具有直角光栅阵列结构的石英玻璃基底。S4. Use an inductively coupled plasma etching process to sequentially dry-etch the imprinting adhesive layer 3 and the sacrificial layer 2 in the first substrate until the quartz glass substrate 1 is exposed at the grating groove to obtain the second substrate, namely It is a quartz glass substrate with a right-angle grating array structure in the sacrificial layer 2.

其中,对压印胶层3进行刻蚀时采用的气体为分别为O2和CHF3按照体积比1:1混合而成的混合气体,对牺牲层2进行刻蚀时采用的刻蚀气体为纯O2Among them, the gas used to etch the imprinting rubber layer 3 is a mixed gas of O 2 and CHF 3 in a volume ratio of 1:1, and the etching gas used to etch the sacrificial layer 2 is Pure O 2 .

S5、采用真空镀膜技术,在第二基底的直角光栅阵列结构的表面沉积金属铬,形成厚度为120nm的金属层5,然后采用丙酮溶解第二基底中的牺牲层2,得到第三基底。S5. Use vacuum coating technology to deposit metal chromium on the surface of the right-angle grating array structure of the second substrate to form a metal layer 5 with a thickness of 120 nm. Then use acetone to dissolve the sacrificial layer 2 in the second substrate to obtain a third substrate.

S6、以沉积的金属层5为掩膜,采用倾角度刻蚀技术,在屏栅电压为350V、束流为90mA、样品台的倾斜角度为45°的条件下对第三基底中的石英玻璃基底1进行刻蚀,刻蚀的时间为20分钟,并采用由硝酸铈铵、乙酸和纯水按照质量比8:22:70混合而成的混合溶剂去除金属层5,得到闪耀光栅阵列结构,其SEM图如图2所示。S6. Use the deposited metal layer 5 as a mask and use tilt-angle etching technology to etch the quartz glass in the third substrate under the conditions of a screen grid voltage of 350V, a beam current of 90mA, and a tilt angle of the sample stage of 45°. The substrate 1 is etched for 20 minutes, and the metal layer 5 is removed using a mixed solvent composed of ammonium cerium nitrate, acetic acid and pure water in a mass ratio of 8:22:70 to obtain a blazed grating array structure. Its SEM picture is shown in Figure 2.

对实施例1得到的闪耀光栅阵列结构的闪耀角进行测量和计算,结果表明其闪耀角为7.2°,能够应用于紫外波段。The blaze angle of the blaze grating array structure obtained in Example 1 was measured and calculated. The results showed that the blaze angle was 7.2° and could be applied to the ultraviolet band.

并且,本实施例步骤S1中制备的弹性体压印复合模板4可重复多次使用,整体制备方法具有操作简单、成本低等优点,最终制备的闪耀光栅具有稳定的机械性能、持久性以及耐磨性,可以作为光学元件应用在分光计、光谱仪等精密仪器以及集成光学等领域,应用前景广阔。Moreover, the elastomer imprinted composite template 4 prepared in step S1 of this embodiment can be used repeatedly. The overall preparation method has the advantages of simple operation and low cost. The finally prepared blazed grating has stable mechanical properties, durability and durability. Abrasive, it can be used as optical components in precision instruments such as spectrometers and spectrometers, as well as in integrated optics and other fields. It has broad application prospects.

综上所述,本发明提供了一种基于纳米压印的闪耀光栅阵列结构及其制备方法和应用。本发明通过采用纳米压印技术,在弹性支撑衬底上制备直角光栅阵列结构,形成弹性体压印复合模板;然后再利用纳米压印技术,将弹性体复合模板上的直角光栅阵列结构复制到石英玻璃基底上的压印胶层中,再利用干法刻蚀技术将直角光栅阵列结构复制到石英玻璃基底上的牺牲层中,然后结合真空镀膜技术和倾角度刻蚀技术,即可简便高效地获得形貌均匀、机械性能稳定的闪耀光栅阵列结构。本发明提供的制备方法具有操作简单、成本低、易量产的优点,通过调控制备过程的工艺参数能够简单高效地控制闪耀光栅的闪耀角,在光学元件和集成光学等领域有着广阔的应用前景。In summary, the present invention provides a nanoimprint-based blazed grating array structure and its preparation method and application. The present invention uses nano-imprint technology to prepare a right-angle grating array structure on an elastic support substrate to form an elastomer-imprinted composite template; and then uses nano-imprint technology to copy the right-angle grating array structure on the elastomer composite template to In the imprinting adhesive layer on the quartz glass substrate, dry etching technology is used to copy the right-angle grating array structure to the sacrificial layer on the quartz glass substrate, and then combined with vacuum coating technology and tilt angle etching technology, it can be simple and efficient A blazed grating array structure with uniform morphology and stable mechanical properties is obtained. The preparation method provided by the invention has the advantages of simple operation, low cost, and easy mass production. By regulating the process parameters of the preparation process, the blaze angle of the blazed grating can be controlled simply and efficiently, and has broad application prospects in the fields of optical elements and integrated optics. .

以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围。The above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently substituted. without departing from the spirit and scope of the technical solution of the present invention.

Claims (10)

1. The preparation method of the blazed grating array structure based on nano imprinting is characterized by comprising the following steps of:
s1, preparing a right-angle grating array structure on an elastic support substrate by adopting a nano imprinting technology to obtain an elastomer imprinting composite template;
s2, sequentially coating a sacrificial layer and an imprinting glue layer on the quartz glass substrate to obtain a pretreated imprinting substrate;
s3, nanoimprinting is carried out on the pretreated imprinting substrate by adopting the elastomer imprinting composite template, so that a right-angle grating array structure on the elastomer imprinting composite template is imprinted in the imprinting adhesive layer of the pretreated imprinting substrate, and a first substrate is obtained;
s4, sequentially etching the imprinting adhesive layer and the sacrificial layer in the first substrate by adopting a dry etching technology until the quartz glass substrate is exposed at the grating groove to obtain a second substrate;
s5, depositing a metal layer on the surface of the right-angle grating array structure of the second substrate by adopting a vacuum coating technology, and then dissolving the sacrificial layer in the second substrate to obtain a third substrate;
and S6, etching the quartz glass substrate in the third substrate by using the deposited metal layer as a mask and adopting an inclination angle etching technology, and removing the metal layer to obtain the blazed grating array structure.
2. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in step S1, the method for preparing the elastomer imprinting composite template includes the following steps:
s11, coating imprinting glue on the surface of the silicon substrate to obtain a pretreated silicon substrate;
s12, covering an elastic support substrate on the surface of the pretreated silicon substrate, and obtaining a pretreated imprinting substrate after the elastic support substrate fully adsorbs the imprinting glue;
s13, nanoimprinting is carried out on the pretreated imprinting substrate by adopting a right-angle grating silicon template, and an elastic supporting substrate with a right-angle grating array structure is obtained;
s14, carrying out low surface energy treatment on the elastic support substrate with the right-angle grating array structure to obtain the elastomer imprinting composite template.
3. The method for preparing a blazed grating array structure based on nano imprinting according to claim 2, wherein: in step S14, the low surface energy treatment is performed in a vacuum environment, and the reagent used in the low surface energy treatment is perfluoroalkyl chlorosilane; the temperature of the low surface energy treatment is 80-95 ℃; the time of the low surface energy treatment is 3-5 h.
4. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in the step S2, the coating thickness of the sacrificial layer is 180-200 nm, and the coating thickness of the imprinting glue layer is 70-90 nm.
5. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in step S2, the material of the sacrificial layer is a water-soluble polymer material or an oil-soluble polymer material; the water-soluble polymer material is one or two of polyvinyl alcohol and polyvinylpyrrolidone, and the oil-soluble polymer material is polymethyl methacrylate.
6. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in step S5, the metal in the metal layer is chromium; the deposition thickness of the metal layer is 110-130 nm.
7. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in step S6, the screen grid voltage adopted in the inclination angle etching is 350-450V, the beam current is 88-92 mA, the inclination angle of the sample stage is 30-60 degrees, and the etching time is 12-20 minutes.
8. The method for preparing a blazed grating array structure based on nano imprinting according to claim 1, wherein: in step S6, the reagent for removing the metal layer is a mixed solution of ceric ammonium nitrate, acetic acid and water.
9. The blazed grating array structure based on nano imprinting is characterized in that: is prepared by the preparation method of any one of claims 1 to 8.
10. Use of a blazed grating array structure based on nanoimprinting as claimed in claim 9, characterized in that: the blazed grating array structure is applied to the fields of optical elements and integrated optics.
CN202311582103.9A 2023-11-24 2023-11-24 Blazed grating array structure based on nano-imprint and preparation method and application thereof Pending CN117590507A (en)

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