CN117664022A - Wafer shape measurement method and device, readable storage medium and electronic equipment - Google Patents
Wafer shape measurement method and device, readable storage medium and electronic equipment Download PDFInfo
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Abstract
The invention discloses a wafer appearance measurement method, a device, a readable storage medium and electronic equipment, which are applied to a wafer appearance measurement system, wherein the system comprises a measurement motion platform for placing a wafer, an edge finder, an appearance measurement probe and a positioning camera, wherein the edge finder, the appearance measurement probe and the positioning camera are erected near the measurement motion platform, and the method comprises the following steps: coarsely positioning and searching the wafer by utilizing the edge finder so as to put the wafer on a measuring motion platform; controlling a measuring motion platform to move the wafer so that the circle center of the wafer moves to the center of a positioning camera, and collecting a template image for positioning; and calculating the coordinates of the motion points and the sampling points of each scanning line in a coordinate system of a measurement motion platform, controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain the surface type data of each scanning line, and determining the shape data of the wafer according to the surface type data. The invention solves the problem of low accuracy in the wafer appearance measurement in the prior art.
Description
Technical Field
The present invention relates to the field of measurement technologies, and in particular, to a wafer shape measurement method and apparatus, a readable storage medium, and an electronic device.
Background
Wafers are fundamental raw materials in semiconductor devices, and most of the current electronic products are manufactured from wafers, and the performance of the wafers has a great influence on the semiconductor industry. In production, the surface microtexture has the most direct effect on the evaluation of many technical properties of the engineering part. The quality of the surface of the wafer can be comprehensively assessed through the measurement of the morphology, and then the quality of the processing method and the rationality of the design requirement are confirmed.
At present, the method for measuring the microscopic morphology of the wafer sample mainly extracts and calculates the morphology information of the sample in a mode that moire fringes are formed by imaging a projection grating and a detection grating. In this technique, there is a problem in that the influence of factors such as light source fluctuation, change in the surface reflectance of the object to be measured, and the environment on the measurement signal is large, and therefore, the measurement accuracy is low.
Disclosure of Invention
In view of the above, the present invention aims to provide a wafer topography measurement method, a device, a storage medium and an electronic apparatus, which are aimed at solving the problem of low accuracy in wafer topography measurement in the prior art.
The embodiment of the invention is realized as follows:
the wafer appearance measurement method is applied to a wafer appearance measurement system, the wafer appearance measurement system comprises a measurement motion platform for placing a wafer, and an edge finder, an appearance measurement probe and a positioning camera which are arranged nearby the measurement motion platform, and the method comprises the following steps:
performing coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on the measuring motion platform;
controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera, and collecting a template image for positioning;
calculating coordinates of the motion points and sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system;
and controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
Further, in the wafer appearance measurement method, before the step of using the edge finder to perform coarse positioning and finding on the wafer to place the wafer on the measurement motion platform, the method further includes:
and calibrating the relation between the positioning camera and each coordinate system to obtain the calibration parameters.
Further, in the wafer topography measurement method, the step of calibrating the relationship between the positioning camera and each coordinate system to obtain the calibration parameter includes:
correcting distortion of the positioning camera and correcting a conversion relation from a positioning camera coordinate system to a wafer coordinate system;
and determining an origin of an image coordinate system according to an intersection point of the image blocks near the wafer, and determining coordinate axes of the image coordinate system according to the arrangement direction of the image blocks so as to determine the image coordinate system.
Further, in the wafer profile measurement method, the step of calibrating the relationship between the positioning camera and each coordinate system to obtain the calibration parameter further includes the steps of:
providing the wafer with a circle center mark, leveling a wafer supporting leg of the measurement motion platform, and ensuring that the wafer is vertical to a positioning camera and a measurement probe;
after the wafer is roughly positioned by the edge finder, the wafer is placed on the measuring motion platform by a carrying mechanism;
searching and configuring the position of the measuring probe aiming at the center of the wafer, and adjusting the angle of the positioning camera around the vertical axis to keep the positioning camera parallel to the coordinate axis of the measuring motion platform;
the center of the wafer is moved to the center position of the visual field of the positioning camera according to the theoretical offset of the center of the positioning camera and the center of the measuring probe, and then the center of the wafer is moved to the exact center position in the visual field of the positioning camera by moving the measuring motion platform;
placing a graphic sheet on a measurement motion platform, then moving the measurement motion platform to the center of the positioning camera, collecting current graphic images, respectively moving a fixed distance along an X axis and a Y axis of the measurement motion platform, and respectively collecting images obtained by moving in the X direction and the Y direction to obtain two graphic sheet images;
positioning different coordinates of the same fixed feature point in the two graphic images in a camera coordinate system in the two graphic images;
and calculating the included angle between the image coordinate system and the wafer coordinate system according to the different coordinates, and calculating the actual distance corresponding to one pixel in the camera coordinate system.
Further, in the wafer appearance measurement method, the step of calculating coordinates of the motion points and the sampling points of each scanning line in a measurement motion platform coordinate system according to the template image and the calibration parameter, and generating the scanning track and the sampling control parameter by using the coordinates in the measurement motion platform coordinate system includes:
calculating the coordinates and angles of the image coordinate system in the positioning camera coordinate system according to the template image and the calibration parameters;
and calculating the coordinates of the motion points and the sampling points of each scanning line in a coordinate system of the measuring motion platform according to the calibration information.
Further, in the wafer appearance measurement method, the step of calculating coordinates of the motion point and the sampling point of each scanning line in the coordinate system of the measurement motion platform according to the calibration information includes:
designating a scanning line, giving an effective sampling position, outputting coordinates of a start moving point and an end moving point of the scanning line in the image coordinate system, coordinates of the start sampling point and the end sampling point, a sampling interval and an effective sampling point set to obtain the calibration information.
Further, the wafer appearance measurement method, wherein the method further comprises:
extracting a pattern cutting image from the current graphic image, rotating the pattern cutting image to a horizontal direction, and designating the distribution of the pattern cutting image on the wafer;
and acquiring a template image designated by a user and an origin and a coordinate axis of the image coordinate system according to the distribution of the pattern cutting graph on the wafer, and determining the position of the origin of the image coordinate system on the template image.
Another object of the present invention is to provide a wafer topography measurement apparatus, applied in a wafer topography measurement system, where the wafer topography measurement system includes a measurement motion platform for placing a wafer, and an edge finder, a topography measurement probe and a positioning camera that are installed near the measurement motion platform, and the apparatus includes:
the positioning module is used for carrying out coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on the measuring motion platform;
the moving module is used for controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera and collect template images for positioning;
the calculation module is used for calculating the coordinates of the motion points and the sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system;
and the measurement module is used for controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain the surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
It is a further object of the present invention to provide a readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the method of any of the above.
It is a further object of the invention to provide an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, which processor implements the steps of the method described above when executing the program.
The invention performs coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on a measuring motion platform; controlling the measuring motion platform to move the wafer so that the circle center of the wafer moves to the center of the positioning camera, and collecting the current wafer image; calculating the coordinates of the motion points and the sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system; the measurement motion platform is controlled to sample the surface type data of each scanning line of the wafer for the wafer image according to the scanning track and the sampling control parameters, and the shape data of the wafer is determined according to the surface type data, so that the problems of factors such as light source fluctuation, surface reflectivity change of a piece to be measured, environment and the like do not need to be considered, the problem that the factors such as light source fluctuation, surface reflectivity change of the piece to be measured, environment and the like influence the measurement result is avoided, and the problem that the measurement accuracy is lower when the wafer shape measurement is carried out in the prior art is solved.
Drawings
FIG. 1 is a flow chart of a wafer topography measurement method according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram showing the positional relationship of each coordinate system in a wafer topography measurement method according to an embodiment of the present invention;
fig. 3 is a block diagram showing a wafer topography apparatus according to a second embodiment of the present invention.
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
How to improve the wafer topography measurement efficiency will be described in detail below with reference to specific embodiments and drawings.
Example 1
Referring to fig. 1, a wafer topography measurement method in a first embodiment of the present invention is applied to a wafer topography measurement system, where the wafer topography measurement system includes a measurement motion platform for placing a wafer, and an edge finder, a topography measurement probe and a positioning camera that are installed near the measurement motion platform, and the method includes steps S10 to S13.
And S10, performing coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on the measuring motion platform.
The edge finder is a detection tool used in industry for accurately determining the position of a workpiece to be processed. Specifically, the edge finder is used for carrying out coarse positioning searching on the wafer, then the wafer is placed on the measurement motion platform, and when the method is implemented, the wafer is placed on the measurement motion platform through the conveying mechanism (such as a wafer robot).
Specifically, the embodiment of the invention is a patterned wafer topography measurement, which refers to measuring the topography of only a partial region conforming to a fixed pattern. For example, only the topography in a rectangular area in the wafer is tested.
Further, the wafer shape measurement system mainly comprises an edge finder, a shape measurement probe, a telecentric positioning camera and a measurement motion platform. The positioning camera and the measuring probe are parallel in direction. In particular, the arrangement positional relationship among the respective coordinate systems may be shown in fig. 2, where Xw and Yw are the X-axis and Y-axis of the wafer coordinate system, XStage and YStage are the X-axis and Y-axis of the measurement motion platform coordinate system, XCam and YCam are the X-axis and Y-axis of the positioning camera coordinate system, and Xpattern and Ypattern are the X-axis and Y-axis of the image coordinate system.
In particular, the relationship between the positioning camera and the plurality of coordinate systems is calibrated for accurately performing the topography measurement of the wafer.
Specifically, distortion correction is performed on a positioning camera (telecentric lens), and a conversion relation from a camera coordinate system to a wafer coordinate system is corrected, wherein the coordinate system of a motion platform is measured, the wafer coordinate system is an internally used coordinate system, the origin of the wafer coordinate system coincides with the center of the wafer, and the coordinate axis is parallel to the coordinate axis of Stage. The image coordinate system is established mainly based on selecting an intersection point in an image block near the center of the wafer as an origin point of the coordinate system, and setting the direction of the coordinate axes to be consistent with the arrangement direction. For modeling convenience.
In addition, in some alternative embodiments of the present invention, the determination of the conversion relationship of other coordinate systems may be implemented as follows:
providing the wafer with a circle center mark, leveling a wafer supporting leg of the measurement motion platform, and ensuring that the wafer is vertical to a positioning camera and a measurement probe;
after the wafer is roughly positioned by the edge finder, the wafer is placed on the measuring motion platform by a carrying mechanism;
searching and configuring the position of the measuring probe aiming at the center of the wafer, and adjusting the angle of the positioning camera around the vertical axis to keep the positioning camera parallel to the coordinate axis of the measuring motion platform;
the center of the wafer is moved to the center position of the visual field of the positioning camera according to the theoretical offset of the center of the positioning camera and the center of the measuring probe, and then the center of the wafer is moved to the exact center position in the visual field of the positioning camera by moving the measuring motion platform;
placing a graphic sheet on a measurement motion platform, then moving the measurement motion platform to the center of the positioning camera, collecting current graphic images, respectively moving a fixed distance along an X axis and a Y axis of the measurement motion platform, and respectively collecting images obtained by moving in the X direction and the Y direction to obtain two graphic sheet images;
positioning different coordinates of the same fixed feature point in the two graphic images in a camera coordinate system in the two graphic images;
and calculating the included angle between the image coordinate system and the wafer coordinate system according to the different coordinates, and calculating the actual distance corresponding to one pixel in the camera coordinate system.
The wafer coordinate system is fixed on the measuring motion platform, so that the coordinates of the wafer coordinate system before and after the movement in the X and Y directions are known, then the coordinates of the same characteristic point in the image coordinate system can be used for calculating the included angle between the image coordinate system and the wafer coordinate system and the physical distance corresponding to one pixel in the camera coordinate system, when the wafer with a circle center mark is prepared, the circle center mark can be clearly seen and aligned in the measuring probe and the positioning camera, the Pin foot is supported by the wafer of the leveling measuring motion platform, the wafer is ensured to be vertical to the camera and the probe, the wafer is placed on the measuring motion platform through a carrying mechanism (such as a wafer robot) after being roughly positioned by the edge finder, the measuring probe is searched and configured to be aligned with the center of the wafer, the angle of the camera around the vertical axis is adjusted, the X axis or the Y axis of the positioning camera is kept parallel to the X axis or the Y axis of the Stage, and then the center of the wafer is moved to the vicinity of the center of the positioning camera according to the theoretical offset of the center of the camera and the center of the probe. The wafer center mark is then moved to the very center position in the camera field of view (wafer coordinate system/metrology motion stage coordinate system) by finely moving the metrology motion stage, placing the graphic sheet onto the metrology motion stage coordinate system, and then moving the metrology motion stage coordinate system to position the camera center. An Image is first taken, denoted Image0, and moved a fixed distance Dx and Dy along the X-axis and Y-axis, respectively, of the measurement motion platform (which requires as close as possible to the field of view of the camera, while ensuring that the same distinct feature point can be seen in two different images), called ImageX and ImageY, respectively. And then respectively positioning the coordinates of the same fixed feature point in the two images in the camera coordinate system in the two images for the two images obtained by X-direction movement and Y-direction movement as { PcamX0, pcamY0} and { PcamX ', pcamY' }. And then calculating the included angle between the image coordinate system and the wafer coordinate system. At the same time, how much actual distance a pixel corresponds to in the camera coordinate system is calculated.
And S11, controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera, and collecting a template image for positioning.
Specifically, the measurement motion platform is controlled to move the wafer so that the center of the circle of the wafer moves to the center of the positioning camera, thereby collecting the wafer image, extracting the pattern cutting images through the wafer image, rotating the pattern cutting images to the horizontal direction, then enabling a user to specify the distribution of the pattern cutting images on the whole wafer, and enabling the user to specify the template image for positioning according to the pattern cutting images.
And step S12, calculating coordinates of the motion points and the sampling points of each scanning line in a coordinate system of a measurement motion platform according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the coordinate system of the measurement motion platform.
Specifically, the calibration parameters include various transformation matrixes, coefficients and the like among the coordinate systems obtained through calibration, and the coordinates of the motion points and the sampling points of each scanning line in the coordinate system of the measurement motion platform can be calculated by combining the calibration parameters with the template image. The method comprises the steps that a user designates the coordinates of a starting point and an ending point of a scanning line in an image coordinate system and the coordinates of sampling points, then the coordinates of the scanning line are converted into a camera coordinate system by utilizing the relation between the image coordinate system and the camera coordinate system, and then the coordinates of a measuring motion platform are converted.
Wherein the user can specify the scan line and give the valid sampling position in the modeling tool. And finally, outputting coordinates of a starting moving point and an ending moving point of the scanning line in an image coordinate system according to a stipulated format by a modeling tool, coordinates of a starting sampling point and an ending sampling point, sampling intervals and an effective sampling point set, positioning coordinates and angles of the image coordinate system in a camera coordinate system according to model (calibration) parameters and positioning images by a positioning algorithm, and particularly, matching or positioning straight lines or a plurality of coordinates in the images by a template by the positioning algorithm, and then calculating the coordinates and angles. And then, converting and calculating coordinates of the motion points and the sampling points of each scanning line in a coordinate system of the measurement motion platform according to the calibration information, wherein the calibration information at least comprises the origin offset between the coordinates, the included angle between the coordinate axes and the physical distance corresponding to the pixels. .
And S13, controlling the measuring motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
And then controlling a measuring motion platform to sample the wafer according to the scanning track, collecting the surface type data on each scanning line, removing invalid sampling point data according to the valid sampling point set, and finally calculating wafer appearance data according to the data.
In summary, in the wafer appearance measurement method according to the above embodiment of the present invention, the wafer is placed on the measurement motion platform by using the edge finder to perform coarse positioning and finding on the wafer; controlling the measuring motion platform to move the wafer so that the circle center of the wafer moves to the center of the positioning camera, and collecting the current wafer image; calculating the coordinates of the motion points and the sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system; the measurement motion platform is controlled to sample the surface type data of each scanning line of the wafer for the wafer image according to the scanning track and the sampling control parameters, and the shape data of the wafer is determined according to the surface type data, so that the problems of factors such as light source fluctuation, surface reflectivity change of a piece to be measured, environment and the like do not need to be considered, the problem that the factors such as light source fluctuation, surface reflectivity change of the piece to be measured, environment and the like influence the measurement result is avoided, and the problem that the measurement accuracy is lower when the wafer shape measurement is carried out in the prior art is solved.
Example two
Referring to fig. 3, a wafer appearance measurement device according to a second embodiment of the present invention is applied to a wafer appearance measurement system, the wafer appearance measurement system includes a measurement motion platform for placing a wafer, and an edge finder, an appearance measurement probe and a positioning camera which are erected near the measurement motion platform, the device includes:
the positioning module 100 is configured to perform coarse positioning searching on the wafer by using the edge finder, so as to place the wafer on the measurement motion platform;
the moving module 200 is used for controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera and collect template images for positioning;
the calculation module 300 is configured to calculate coordinates of the motion points and the sampling points of each scan line in a measurement motion platform coordinate system according to the template image and the calibration parameters, and generate a scan track and a sampling control parameter by using the coordinates in the measurement motion platform coordinate system;
and the measurement module 400 is used for controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain the surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
Further, the wafer appearance measuring device is characterized in that the device comprises:
and the calibration module is used for calibrating the relation between the positioning camera and each coordinate system so as to obtain the calibration parameters.
Further, the wafer appearance measurement device, wherein the calibration module comprises:
the correction unit is used for carrying out distortion correction on the positioning camera and correcting the conversion relation from the positioning camera coordinate system to the wafer coordinate system;
and the determining unit is used for determining an origin point of an image coordinate system according to the intersection point of the image blocks near the wafer, and determining coordinate axes of the image coordinate system according to the arrangement direction of the image blocks so as to determine the image coordinate system.
Further, the wafer appearance measurement device, wherein the calibration module further comprises:
providing the wafer with a circle center mark, leveling a wafer supporting leg of the measurement motion platform, and ensuring that the wafer is vertical to a positioning camera and a measurement probe;
after the wafer is roughly positioned by the edge finder, the wafer is placed on the measuring motion platform by a carrying mechanism;
searching and configuring the position of the measuring probe aiming at the center of the wafer, and adjusting the angle of the positioning camera around the vertical axis to keep the positioning camera parallel to the coordinate axis of the measuring motion platform;
the center of the wafer is moved to the center position of the visual field of the positioning camera according to the theoretical offset of the center of the positioning camera and the center of the measuring probe, and then the center of the wafer is moved to the exact center position in the visual field of the positioning camera by moving the measuring motion platform;
placing a graphic sheet on a measurement motion platform, then moving the measurement motion platform to the center of the positioning camera, collecting current graphic images, respectively moving a fixed distance along an X axis and a Y axis of the measurement motion platform, and respectively collecting images obtained by moving in the X direction and the Y direction to obtain two graphic sheet images;
positioning different coordinates of the same fixed feature point in the two graphic images in a camera coordinate system in the two graphic images;
and calculating the included angle between the image coordinate system and the wafer coordinate system according to the different coordinates, and calculating the actual distance corresponding to one pixel in the camera coordinate system.
Further, the wafer appearance measurement device, wherein the calculation module includes:
the first calculation unit is used for calculating the coordinates and angles of the image coordinate system in the positioning camera coordinate system according to the template image and the calibration parameters;
and the second calculation unit is used for calculating the coordinates of the motion points and the sampling points of each scanning line in the coordinate system of the measurement motion platform according to the calibration information.
Further, in some optional embodiments of the present invention, the computing unit is specifically configured to:
designating a scanning line, giving an effective sampling position, outputting coordinates of a start moving point and an end moving point of the scanning line in the image coordinate system, coordinates of the start sampling point and the end sampling point, a sampling interval and an effective sampling point set to obtain the calibration information.
Further, the wafer appearance measurement device, wherein the device further comprises:
the extraction module is used for extracting a pattern cutting image from the current graphic image, rotating the pattern cutting image to the horizontal direction and designating the distribution of the pattern cutting image on the wafer;
and acquiring a template image designated by a user and an origin and a coordinate axis of the image coordinate system according to the distribution of the pattern cutting graph on the wafer, and determining the position of the origin of the image coordinate system on the template image.
The functions or operation steps implemented when the above modules are executed are substantially the same as those in the above method embodiments, and are not described herein again.
Example III
Another aspect of the present invention also provides a readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of the method described in the first embodiment above.
Example IV
In another aspect, the present invention also provides an electronic device, where the electronic device includes a memory, a processor, and a computer program stored on the memory and executable on the processor, where the processor executes the program to implement the steps of the method described in the first embodiment.
The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, they should be considered as the scope of the description of the present specification as long as there is no contradiction between the combinations of the technical features.
Those of skill in the art will appreciate that the logic and/or steps represented in the flow diagrams or otherwise described herein, e.g., a ordered listing of executable instructions for implementing logical functions, can be embodied in any computer-readable storage medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable storage medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
More specific examples (a non-exhaustive list) of the computer-readable storage medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). In addition, the computer-readable storage medium may even be paper or other suitable medium upon which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other medium, then compiled, interpreted, or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The wafer appearance measurement method is characterized by being applied to a wafer appearance measurement system, wherein the wafer appearance measurement system comprises a measurement motion platform for placing a wafer, and an edge finder, an appearance measurement probe and a positioning camera which are arranged nearby the measurement motion platform, and the method comprises the following steps:
performing coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on the measuring motion platform;
controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera, and collecting a template image for positioning;
calculating coordinates of the motion points and sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system;
and controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
2. The wafer topography measurement method of claim 1, wherein the step of using the edge finder to perform a coarse positioning search on the wafer to place the wafer on the measurement motion stage further comprises:
and calibrating the relation between the positioning camera and each coordinate system to obtain the calibration parameters.
3. The wafer topography measurement method of claim 2, wherein calibrating the relationship between the positioning camera and the respective coordinate systems to obtain the calibration parameters comprises:
correcting distortion of the positioning camera and correcting a conversion relation from a positioning camera coordinate system to a wafer coordinate system;
and determining an origin of an image coordinate system according to an intersection point of the image blocks near the wafer, and determining coordinate axes of the image coordinate system according to the arrangement direction of the image blocks so as to determine the image coordinate system.
4. The wafer topography measurement method of claim 2, wherein the step of calibrating the relationship between the positioning camera and the respective coordinate systems to obtain the calibration parameters further comprises the steps of:
providing the wafer with a circle center mark, leveling a wafer supporting leg of the measurement motion platform, and ensuring that the wafer is vertical to a positioning camera and a measurement probe;
after the wafer is roughly positioned by the edge finder, the wafer is placed on the measuring motion platform by a carrying mechanism;
searching and configuring the position of the measuring probe aiming at the center of the wafer, and adjusting the angle of the positioning camera around the vertical axis to keep the positioning camera parallel to the coordinate axis of the measuring motion platform;
the center of the wafer is moved to the center position of the visual field of the positioning camera according to the theoretical offset of the center of the positioning camera and the center of the measuring probe, and then the center of the wafer is moved to the exact center position in the visual field of the positioning camera by moving the measuring motion platform;
placing a graphic sheet on a measurement motion platform, then moving the measurement motion platform to the center of the positioning camera, collecting current graphic images, respectively moving a fixed distance along an X axis and a Y axis of the measurement motion platform, and respectively collecting images obtained by moving in the X direction and the Y direction to obtain two graphic sheet images;
positioning different coordinates of the same fixed feature point in the two graphic images in a camera coordinate system in the two graphic images;
and calculating the included angle between the image coordinate system and the wafer coordinate system according to the different coordinates, and calculating the actual distance corresponding to one pixel in the camera coordinate system.
5. The wafer topography measurement method according to claim 1, wherein the step of calculating coordinates of the moving points and the sampling points of each scan line in a measurement motion platform coordinate system according to the template image and the calibration parameter, and generating a scan trajectory and a sampling control parameter using the coordinates in the measurement motion platform coordinate system comprises:
calculating the coordinates and angles of the image coordinate system in the positioning camera coordinate system according to the template image and the calibration parameters;
and calculating the coordinates of the motion points and the sampling points of each scanning line in a coordinate system of the measuring motion platform according to the calibration information.
6. The wafer topography measurement method of claim 5, wherein the step of calculating coordinates of the motion points and the sampling points of each scan line in the measurement motion platform coordinate system based on the calibration information comprises:
designating a scanning line, giving an effective sampling position, outputting coordinates of a start moving point and an end moving point of the scanning line in the image coordinate system, coordinates of the start sampling point and the end sampling point, a sampling interval and an effective sampling point set to obtain the calibration information.
7. The wafer topography measurement method of claim 4, further comprising:
extracting a pattern cutting image from the current graphic image, rotating the pattern cutting image to a horizontal direction, and designating the distribution of the pattern cutting image on the wafer;
and acquiring a template image designated by a user and an origin and a coordinate axis of the image coordinate system according to the distribution of the pattern cutting graph on the wafer, and determining the position of the origin of the image coordinate system on the template image.
8. The utility model provides a wafer appearance measuring device, its characterized in that is applied to among the wafer appearance measuring system, wafer appearance measuring system is including being used for placing the measurement motion platform of wafer, and set up in seek limit ware, appearance measurement probe, the location camera near the measurement motion platform, the device includes:
the positioning module is used for carrying out coarse positioning searching on the wafer by utilizing the edge finder so as to put the wafer on the measuring motion platform;
the moving module is used for controlling the measuring motion platform to move the wafer so as to enable the circle center of the wafer to move to the center of the positioning camera and collect template images for positioning;
the calculation module is used for calculating the coordinates of the motion points and the sampling points of each scanning line in a measuring motion platform coordinate system according to the template image and the calibration parameters, and generating a scanning track and sampling control parameters by utilizing the coordinates in the measuring motion platform coordinate system;
and the measurement module is used for controlling the measurement motion platform to sample the wafer according to the scanning track and the sampling control parameters to obtain the surface type data on each scanning line, and determining the shape data of the wafer according to the surface type data.
9. A readable storage medium, on which a computer program is stored, characterized in that the program, when being executed by a processor, implements the steps of the method according to any one of claims 1 to 7.
10. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of the method according to any one of claims 1 to 7 when the program is executed.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118328854A (en) * | 2024-06-14 | 2024-07-12 | 上海优睿谱半导体设备有限公司 | Measuring system and method for center positioning of motion platform |
| CN119559285A (en) * | 2025-01-22 | 2025-03-04 | 苏州联讯仪器股份有限公司 | Method, device and equipment for generating wafer map and testing wafer |
| CN119803327A (en) * | 2024-12-18 | 2025-04-11 | 深圳中科飞测科技股份有限公司 | Wafer two-dimensional warpage measurement device, method and wafer measurement system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118328854A (en) * | 2024-06-14 | 2024-07-12 | 上海优睿谱半导体设备有限公司 | Measuring system and method for center positioning of motion platform |
| CN119803327A (en) * | 2024-12-18 | 2025-04-11 | 深圳中科飞测科技股份有限公司 | Wafer two-dimensional warpage measurement device, method and wafer measurement system |
| CN119559285A (en) * | 2025-01-22 | 2025-03-04 | 苏州联讯仪器股份有限公司 | Method, device and equipment for generating wafer map and testing wafer |
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