CN117702259A - Method for quickly cooling PVT furnace - Google Patents
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- 238000001816 cooling Methods 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000112 cooling gas Substances 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims abstract description 21
- 239000001307 helium Substances 0.000 claims abstract description 13
- 229910052734 helium Inorganic materials 0.000 claims abstract description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 64
- 229910052786 argon Inorganic materials 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 32
- 229910002804 graphite Inorganic materials 0.000 description 31
- 239000010439 graphite Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 230000006698 induction Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
- F27D2009/0002—Cooling of furnaces
- F27D2009/0005—Cooling of furnaces the cooling medium being a gas
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本申请公开了一种PVT炉快速降温的方法,包括以下步骤:S1:PVT炉停止加热,向PVT炉内充入冷却气体,冷却气体为氦气,控制PVT炉内压强,直至PVT炉的温度不超过50℃;S2:完成降温,向PVT炉内充入惰性气体,直至PVT炉内压力达到大气压,取出坩埚。本申请的PVT炉快速降温的方法,能够大幅缩短PVT炉降至常温的时间,从而提高生产效率。
This application discloses a method for rapid cooling of a PVT furnace, which includes the following steps: S1: Stop heating the PVT furnace, fill the PVT furnace with cooling gas, the cooling gas is helium, and control the pressure in the PVT furnace until the temperature of the PVT furnace Not exceeding 50℃; S2: Complete the cooling, fill the PVT furnace with inert gas until the pressure in the PVT furnace reaches atmospheric pressure, and take out the crucible. The rapid cooling method of the PVT furnace in this application can greatly shorten the time for the PVT furnace to cool down to normal temperature, thereby improving production efficiency.
Description
技术领域Technical field
本申请涉及半导体生长技术领域,具体地涉及一种PVT炉快速降温的方法。The present application relates to the field of semiconductor growth technology, and specifically to a method for rapid cooling of a PVT furnace.
背景技术Background technique
碳化硅(SiC)以其宽禁带、高饱和电子迁移率、高击穿电场和高热导率等优异特性,成为第三代半导体的热门材料,被广泛应用于5G通信、新能源汽车和光伏逆变器等产业。Silicon carbide (SiC) has become a popular material for third-generation semiconductors due to its wide bandgap, high saturation electron mobility, high breakdown electric field and high thermal conductivity. It is widely used in 5G communications, new energy vehicles and photovoltaics. Inverter and other industries.
第三代半导体碳化硅单晶的制备方法主要包括物理气相传输法(PVT)、顶部籽晶溶液生长法(TSSG)和高温化学气相沉积法(HT-CVD),其中PVT法是当前商业化的主要技术路线。The preparation methods of third-generation semiconductor silicon carbide single crystals mainly include physical vapor transport (PVT), top seed solution growth (TSSG) and high-temperature chemical vapor deposition (HT-CVD). The PVT method is currently commercialized. Main technical routes.
第三代半导体碳化硅单晶生长所用的高纯碳化硅粉料合成方法有:液相法、固相法和气相法。其中固相法(改善自蔓延法合成碳化硅又称PVT法)制备高纯碳化硅具有纯度高、产量大和颗粒结晶度好等特点,被广泛推广。The synthesis methods of high-purity silicon carbide powder used in the growth of third-generation semiconductor silicon carbide single crystals include: liquid phase method, solid phase method and gas phase method. Among them, the solid-phase method (improved self-propagation method to synthesize silicon carbide, also known as PVT method) to prepare high-purity silicon carbide has the characteristics of high purity, large output and good particle crystallinity, and has been widely promoted.
目前,第三代半导体碳化硅单晶和高纯粉料最常用的的制备方法都是通过PVT炉制得。PVT炉是实现PVT法的设备,它采用感应加热将石墨坩埚加热到2000~2300 ℃,在石英管/不锈钢腔体内以物理气相传输法(PVT)生长高纯SiC晶体和高纯SiC粉体。PVT炉具备耐受温度高、升温速度快和保温性能好等特点。At present, the most commonly used preparation methods for third-generation semiconductor silicon carbide single crystals and high-purity powders are through PVT furnaces. The PVT furnace is an equipment that implements the PVT method. It uses induction heating to heat the graphite crucible to 2000~2300°C, and grows high-purity SiC crystals and high-purity SiC powder in a quartz tube/stainless steel cavity using the physical vapor transport method (PVT). PVT furnace has the characteristics of high temperature resistance, fast heating speed and good thermal insulation performance.
由于PVT炉具有较好的保温性能,致使其降温速度慢。PVT炉自室温升温至2200 ℃只需要5~10 h,但PVT炉从2200 ℃降温至室温则需要30~40 h。PVT炉的降温速度慢,大大降低了其周期循环使用效率,无法达到最佳的生产效率。因此需要开发一种经济高效的方式,加快PVT炉的降温速度。Because the PVT furnace has good heat preservation performance, its cooling rate is slow. It only takes 5 to 10 hours to heat up the PVT furnace from room temperature to 2200 ℃, but it takes 30 to 40 hours to cool down the PVT furnace from 2200 ℃ to room temperature. The cooling rate of PVT furnace is slow, which greatly reduces its cycle efficiency and cannot achieve optimal production efficiency. Therefore, it is necessary to develop a cost-effective way to speed up the cooling of PVT furnaces.
发明内容Contents of the invention
本申请的目的在于加快PVT炉的降温速率。The purpose of this application is to speed up the cooling rate of the PVT furnace.
为达到以上目的,本申请采用的技术方案为:一种PVT炉快速降温的方法,包括以下步骤:S1:PVT炉停止加热,向所述PVT炉内充入冷却气体,所述冷却气体为氦气,控制所述PVT炉内压强,直至所述PVT炉的温度不超过50 ℃;S2:完成降温,向所述PVT炉内充入惰性气体,直至所述PVT炉内压力达到大气压,取出坩埚。In order to achieve the above purpose, the technical solution adopted in this application is: a method for rapid cooling of a PVT furnace, which includes the following steps: S1: Stop heating the PVT furnace, and fill the PVT furnace with cooling gas. The cooling gas is helium. Gas, control the pressure in the PVT furnace until the temperature of the PVT furnace does not exceed 50°C; S2: Complete the cooling, fill the PVT furnace with inert gas until the pressure in the PVT furnace reaches atmospheric pressure, and take out the crucible .
作为一种优选,所述冷却气体和所述惰性气体的纯度大于99.9999%。Preferably, the purity of the cooling gas and the inert gas is greater than 99.9999%.
作为另一种优选,所述步骤S1中,控制所述PVT炉的压强为600~800 mbar。As another preference, in step S1, the pressure of the PVT furnace is controlled to 600~800 mbar.
作为另一种优选,所述惰性气体为氩气。As another preference, the inert gas is argon.
作为另一种优选,所述S1步骤具体为:所述PVT炉停止加热,向所述PVT炉内充入所述冷却气体,所述冷却气体为氦气,打开强冷系统的阀门,启动所述强冷系统的风机,使用热交换器对所述冷却气体进行换热降温,直至所述PVT炉的温度不超过50 ℃。As another preference, step S1 specifically includes: stopping heating of the PVT furnace, filling the cooling gas into the PVT furnace, where the cooling gas is helium, opening the valve of the forced cooling system, and starting all The fan of the forced cooling system uses a heat exchanger to exchange heat and lower the temperature of the cooling gas until the temperature of the PVT furnace does not exceed 50°C.
一种PVT炉快速降温的方法,包括以下步骤:A1:PVT炉停止加热,向所述PVT炉内充入第一冷却气体,所述第一冷却气体为氩气或氦气,控制所述PVT炉内压强,直至所述PVT炉的温度不超过1000 ℃;A2:将所述PVT炉内的所述第一冷却气体抽出,并充入第二冷却气体,所述第二冷却气体为氢气,直至所述PVT炉的温度不超过50 ℃;A3:完成降温,向所述PVT炉内充入惰性气体,直至所述PVT炉内压力达到大气压,取出坩埚。A method for rapidly cooling a PVT furnace, including the following steps: A1: Stop heating the PVT furnace, fill the PVT furnace with a first cooling gas, the first cooling gas is argon or helium, control the PVT The pressure in the furnace is until the temperature of the PVT furnace does not exceed 1000°C; A2: Extract the first cooling gas in the PVT furnace and fill it with a second cooling gas, and the second cooling gas is hydrogen, Until the temperature of the PVT furnace does not exceed 50°C; A3: Complete the cooling, fill the PVT furnace with inert gas until the pressure in the PVT furnace reaches atmospheric pressure, and take out the crucible.
作为另一种优选,所述第一冷却气体、所述第二冷却气体和所述惰性气体的纯度大于99.9999%。As another preference, the purity of the first cooling gas, the second cooling gas and the inert gas is greater than 99.9999%.
作为另一种优选,所述步骤A1中,控制所述PVT炉的压强为600~800 mbar。As another preference, in step A1, the pressure of the PVT furnace is controlled to 600~800 mbar.
作为另一种优选,所述惰性气体为氩气。As another preference, the inert gas is argon.
进一步优选,所述步骤A2具体为:将所述第一冷却气体抽出并充入所述第二冷却性气体,打开强冷系统的阀门,启动所述强冷系统的风机,使用热交换器对所述第二冷却气体进行换热降温,直至所述PVT炉的温度不超过50 ℃。Further preferably, the step A2 specifically includes: extracting the first cooling gas and filling it with the second cooling gas, opening the valve of the forced cooling system, starting the fan of the forced cooling system, and using a heat exchanger to The second cooling gas performs heat exchange and cooling until the temperature of the PVT furnace does not exceed 50°C.
与现有技术相比,本申请的有益效果在于:Compared with the existing technology, the beneficial effects of this application are:
(1)本申请的PVT炉快速降温的方法,能够大幅缩短PVT炉降至常温的时间,从而提高生产效率;(1) The rapid cooling method of the PVT furnace in this application can greatly shorten the time for the PVT furnace to drop to normal temperature, thereby improving production efficiency;
(2)本申请的PVT炉快速降温的方法,避免为PVT炉内引入新的杂质,同时降低降温成本。(2) The method of rapid cooling of the PVT furnace in this application avoids the introduction of new impurities into the PVT furnace and at the same time reduces the cost of cooling.
附图说明Description of the drawings
图1为本申请一个实施例的PVT炉快速降温的装置;Figure 1 is a device for rapid cooling of a PVT furnace according to an embodiment of the present application;
图中:1、石墨坩埚;2、热场;3、PVT炉;4、强冷系统;41、风机;42、热交换器;43、阀门。In the picture: 1. Graphite crucible; 2. Thermal field; 3. PVT furnace; 4. Forced cooling system; 41. Fan; 42. Heat exchanger; 43. Valve.
具体实施方式Detailed ways
下面,结合具体实施方式,对本申请做进一步描述,需要说明的是,在不相冲突的前提下,以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。Below, the present application will be further described with reference to specific implementation modes. It should be noted that, on the premise that there is no conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.
本申请的说明书和权利要求书中的术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。The terms "comprising" and "having" and any variations thereof in the description and claims of this application are intended to cover a non-exclusive inclusion, for example, a process, method, system, product or product that includes a series of steps or units. Apparatus are not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such processes, methods, products or devices.
本申请提供一种PVT炉快速降温的方法,包括以下步骤:This application provides a method for rapid cooling of a PVT furnace, which includes the following steps:
S1:PVT炉停止加热,向PVT炉内充入冷却气体,冷却气体为氦气,控制PVT炉内压强,直至PVT炉的温度不超过50 ℃;S1: Stop heating the PVT furnace, fill the PVT furnace with cooling gas, the cooling gas is helium, and control the pressure in the PVT furnace until the temperature of the PVT furnace does not exceed 50 ℃;
S2:向PVT炉内充入惰性气体,直至PVT炉内压力达到大气压,完成降温。S2: Fill the PVT furnace with inert gas until the pressure in the PVT furnace reaches atmospheric pressure and complete the cooling.
在一些实施例中,PVT炉接入强冷系统,强冷系统设置有热交换器或风机等降温装置,提升PVT炉的降温速率,节省时间。通过强冷系统中热交换器的设置,使得PVT炉内的气体流动起来,并与热交换器充分接触,可以快速带走炉内的温度,进一步提高降温速度。In some embodiments, the PVT furnace is connected to a forced cooling system, and the forced cooling system is equipped with cooling devices such as heat exchangers or fans to increase the cooling rate of the PVT furnace and save time. Through the setting of the heat exchanger in the forced cooling system, the gas in the PVT furnace flows and fully contacts the heat exchanger, which can quickly take away the temperature in the furnace and further increase the cooling speed.
在一些实施例中,步骤S1具体为:PVT炉停止加热,向PVT炉内充入冷却气体,冷却气体为氦气,打开强冷系统的阀门,启动强冷系统的风机,使用热交换器对冷却气体进行换热降温,直至PVT炉的温度不超过50 ℃。In some embodiments, step S1 is specifically: stop heating the PVT furnace, fill the PVT furnace with cooling gas, the cooling gas is helium, open the valve of the forced cooling system, start the fan of the forced cooling system, and use the heat exchanger to The cooling gas undergoes heat exchange and cooling until the temperature of the PVT furnace does not exceed 50°C.
在一些实施例中,步骤S1中控制PVT炉内的压强为600~800 mbar。In some embodiments, the pressure in the PVT furnace is controlled to be 600~800 mbar in step S1.
在一些实施例中,惰性气体选择价格低廉的氩气。In some embodiments, the inert gas is inexpensive argon.
在一些实施例中,为了避免向PVT炉中引入杂质,冷却气体及惰性气体选用纯度大于99.9999%的高纯气体。In some embodiments, in order to avoid introducing impurities into the PVT furnace, high-purity gases with a purity greater than 99.9999% are selected as cooling gas and inert gas.
本申请还提供一种PVT炉快速降温的方法,包括以下步骤:This application also provides a method for rapid cooling of a PVT furnace, which includes the following steps:
A1:PVT炉停止加热,向PVT炉内充入第一冷却气体,第一冷却气体为氩气或氦气,控制PVT炉内压强,直至PVT炉的温度不超过1000 ℃;A1: Stop heating the PVT furnace, fill the PVT furnace with the first cooling gas, the first cooling gas is argon or helium, and control the pressure in the PVT furnace until the temperature of the PVT furnace does not exceed 1000°C;
A2:将PVT炉内的第一冷却气体抽出,并充入第二冷却气体,第二冷却气体为氢气,直至PVT炉的温度不超过50 ℃;A2: Extract the first cooling gas from the PVT furnace and fill it with the second cooling gas. The second cooling gas is hydrogen until the temperature of the PVT furnace does not exceed 50°C;
A3:向PVT炉内充入惰性气体,直至PVT炉内压力达到大气压,完成降温。A3: Fill the PVT furnace with inert gas until the pressure in the PVT furnace reaches atmospheric pressure to complete the cooling.
在一些优选的实施例中,PVT炉接入强冷系统,并在步骤A2中,待PVT炉充入第二冷却性气体后,打开强冷系统的阀门,启动强冷系统的风机,并使用热交换器进行换热,直至PVT炉内温度不超过50 ℃。In some preferred embodiments, the PVT furnace is connected to the forced cooling system, and in step A2, after the PVT furnace is filled with the second cooling gas, the valve of the forced cooling system is opened, the fan of the forced cooling system is started, and the The heat exchanger performs heat exchange until the temperature in the PVT furnace does not exceed 50°C.
在一些实施例中,A1步骤控制PVT炉内压强为600~800 mbar。In some embodiments, step A1 controls the pressure in the PVT furnace to be 600~800 mbar.
在一些实施例中,惰性气体为价格相对低廉的氩气。In some embodiments, the inert gas is relatively inexpensive argon.
在一些优选的实施例中,第一冷却气体、第二冷却气体和惰性气体为均高纯气体,纯度大于99.9999%,以确保PVT炉内不被杂质污染,并且确保降温系统的安全运行。In some preferred embodiments, the first cooling gas, the second cooling gas and the inert gas are all high-purity gases, with a purity greater than 99.9999%, to ensure that the PVT furnace is not contaminated by impurities and to ensure the safe operation of the cooling system.
PVT炉内部是一个封闭的环境,热的传导主要靠气体的传输,其中不同导热系数的冷却气体的导热速度决定了降温速度。氩气的热导率为0.016 W/(m·K),氦气的热导率为0.15 W/(m·K),氢气的热导率为0.1805 W/(m·K),由此可见,氢气的热导率是三种冷却气体中最高的,PVT炉降温时使用氢气可以加快降温速率。The interior of the PVT furnace is a closed environment, and heat conduction mainly depends on gas transmission. The heat conduction speed of cooling gases with different thermal conductivity determines the cooling speed. The thermal conductivity of argon is 0.016 W/(m·K), the thermal conductivity of helium is 0.15 W/(m·K), and the thermal conductivity of hydrogen is 0.1805 W/(m·K). It can be seen that , The thermal conductivity of hydrogen is the highest among the three cooling gases. Using hydrogen when cooling the PVT furnace can speed up the cooling rate.
将PVT炉的降温分为两个阶段,并且两个阶段充入不同的冷却气体,在A1阶段中充入氩气降温,待PVT炉降温至1000 ℃以下,将PVT炉内的氩气抽出,并充入氢气。The cooling of the PVT furnace is divided into two stages, and different cooling gases are filled in the two stages. In the A1 stage, argon gas is filled for cooling. When the PVT furnace cools down to below 1000°C, the argon gas in the PVT furnace is extracted. And filled with hydrogen gas.
由于氢气在高温下将与PVT炉内的碳反应,造成炉内污染,因此使用氩气将温度降低后,将PVT炉内气体更换为氢气,缩短降温时间。Since hydrogen will react with the carbon in the PVT furnace at high temperatures, causing pollution in the furnace, argon gas is used to lower the temperature, and then the gas in the PVT furnace is replaced with hydrogen to shorten the cooling time.
在标准的状态下,氩气的热导率为0.016 W/(m·K),氩气在热传导过程中能力有限,但其相较于其他惰性气体成本低廉,因此在A2步骤中降温结束后向PVT炉内充入氩气,使得PVT炉内外气压保持一致。Under standard conditions, the thermal conductivity of argon is 0.016 W/(m·K). Argon has limited capabilities in the heat conduction process, but its cost is low compared to other inert gases. Therefore, after cooling in step A2 Fill the PVT furnace with argon gas to keep the air pressure inside and outside the PVT furnace consistent.
在向炉内充入冷却气体时,先以大流量迅速将PVT炉充满,在降温的过程中维持小流量以使得惰性气体充分的进行热交换。When filling the furnace with cooling gas, first quickly fill the PVT furnace with a large flow rate, and maintain a small flow rate during the cooling process to allow the inert gas to fully conduct heat exchange.
本申请还提供一种PVT炉快速降温的装置,如图1所示,包括石墨坩埚1、热场2、PVT炉3和强冷系统4,热场2内置有石墨坩埚1,热场2装载在PVT炉3内,PVT炉3连接强冷系统4。This application also provides a device for rapid cooling of a PVT furnace, as shown in Figure 1, including a graphite crucible 1, a thermal field 2, a PVT furnace 3 and a forced cooling system 4. The thermal field 2 has a built-in graphite crucible 1, and the thermal field 2 is loaded with In the PVT furnace 3, the PVT furnace 3 is connected to the forced cooling system 4.
强冷系统4中包括有风机41、热交换器42和阀门43,阀门43用于控制强冷系统4的管道是否与PVT炉3连通。The forced cooling system 4 includes a fan 41, a heat exchanger 42 and a valve 43. The valve 43 is used to control whether the pipeline of the forced cooling system 4 is connected to the PVT furnace 3.
热交换器42为常用的现有技术,图中以使用冷却循环水进行热交换为例。The heat exchanger 42 is a commonly used existing technology. In the figure, the use of cooling circulating water for heat exchange is used as an example.
PVT炉3设置有感应加热系统和真空压力系统,其感应加热系统由感应电源和感应线圈组成,PVT炉3内的真空压力系统由机械泵、分子泵、比例阀和流量计等部件组成。PVT炉3腔体由石英管和金属法兰等部件组成。The PVT furnace 3 is equipped with an induction heating system and a vacuum pressure system. The induction heating system is composed of an induction power supply and an induction coil. The vacuum pressure system in the PVT furnace 3 is composed of a mechanical pump, a molecular pump, a proportional valve, a flow meter and other components. PVT furnace 3 cavity is composed of quartz tubes, metal flanges and other components.
热场2内部为石墨桶,石墨桶的外侧由石墨软毡缠绕3~5层,石墨桶顶部覆盖多层石墨软毡,石墨桶底部设置有石墨硬毡。石墨软毡及石墨硬毡都具有保温作用,而设置在石墨桶底部的石墨硬毡还起到支撑石墨桶的作用。石墨软毡和石墨硬毡的纯度均大于99.998%。The inside of the thermal field 2 is a graphite barrel. The outside of the graphite barrel is wrapped with 3 to 5 layers of graphite soft felt. The top of the graphite barrel is covered with multiple layers of graphite soft felt, and the bottom of the graphite barrel is provided with graphite hard felt. Both soft graphite felt and hard graphite felt have a thermal insulation effect, and the hard graphite felt placed at the bottom of the graphite barrel also plays a role in supporting the graphite barrel. The purity of graphite soft felt and hard graphite felt is both greater than 99.998%.
石墨坩埚1适于嵌入式放置在热场2的石墨桶内,石墨坩埚1包括石墨体、石墨上盖和石墨下盖,石墨上盖和石墨下盖分别使用石墨螺栓与石墨体连接。其中石墨坩埚的纯度大于99.9999%。Graphite crucible 1 is suitable for being embedded in the graphite barrel of thermal field 2. Graphite crucible 1 includes a graphite body, a graphite upper cover and a graphite lower cover. The graphite upper cover and graphite lower cover are connected to the graphite body using graphite bolts respectively. The purity of the graphite crucible is greater than 99.9999%.
实施例1Example 1
为测试本申请PVT炉快速降温的方法,使用如图1所示的降温装置,先将PVT炉进行升温,再保温一段时间。升温和保温步骤模拟实际PVT炉生产场景In order to test the method of rapid cooling of the PVT furnace in this application, the cooling device shown in Figure 1 is used to first heat up the PVT furnace and then keep it warm for a period of time. The heating and holding steps simulate actual PVT furnace production scenarios
升温阶段:将装有石墨坩埚1的热场2放入PVT炉3的腔体中,将PVT炉3内压力设置在1*10-3 mbar以下,并将PVT炉3加热至2200 ℃。Heating stage: Place the thermal field 2 containing the graphite crucible 1 into the cavity of the PVT furnace 3, set the pressure in the PVT furnace 3 below 1*10 -3 mbar, and heat the PVT furnace 3 to 2200°C.
保温阶段:PVT炉3达到2200 ℃时,向PVT炉3内充入氩气,将炉内压力设置在600±2 mbar,炉内温度保持在2200±10 ℃,将PVT炉3保温10个小时。Insulation stage: When PVT furnace 3 reaches 2200 ℃, fill PVT furnace 3 with argon gas, set the pressure in the furnace to 600±2 mbar, keep the temperature in the furnace at 2200±10 ℃, and keep PVT furnace 3 warm for 10 hours .
降温阶段:S1:PVT炉3停止加热并开始计时,将炉内氩气抽空,向PVT炉3内充入氦气,将炉内压力控制在800±2 mbar左右,直至PVT炉3温度降低至50 ℃以下;Cooling stage: S1: PVT furnace 3 stops heating and starts timing, evacuates the argon gas in the furnace, fills helium into PVT furnace 3, and controls the pressure in the furnace to about 800±2 mbar until the temperature of PVT furnace 3 drops to Below 50 ℃;
S2:向PVT炉3充入氩气,炉内压力达到大气压后停止计时。S2: Fill PVT furnace 3 with argon gas, and stop timing after the pressure in the furnace reaches atmospheric pressure.
实施例2Example 2
实施例2的升温阶段和保温阶段与实施例1中保持一致。The temperature rise stage and heat preservation stage in Example 2 remain the same as in Example 1.
降温阶段:S10:PVT炉3停止加热并开始计时,将炉内压力控制在800±2 mbar,直至将PVT炉3的温度降低至1000 ℃;Cooling stage: S10: PVT furnace 3 stops heating and starts timing, and controls the pressure in the furnace at 800±2 mbar until the temperature of PVT furnace 3 is reduced to 1000°C;
S11:将PVT炉3内的氩气抽空并充入氢气,将炉内压力控制在800±2 mbar,直至将PVT炉3的温度降低至50 ℃以下;S11: Evacuate the argon gas in the PVT furnace 3 and fill it with hydrogen, and control the pressure in the furnace at 800±2 mbar until the temperature of the PVT furnace 3 is reduced to below 50°C;
S2:将PVT炉3内氢气抽空,向炉内充入氩气直至炉内压力达到大气压,停止计时。S2: Evacuate the hydrogen in the PVT furnace 3, fill the furnace with argon until the pressure in the furnace reaches atmospheric pressure, and stop the timing.
实施例3Example 3
升温阶段:将装有石墨坩埚1的热场2放入PVT炉3的腔体中,打开强冷系统4的阀门43,将PVT炉3内压力设置在1*10-3 mbar以下,关闭风阀43,并将PVT炉3加热至2200 ℃。Heating stage: Place the thermal field 2 equipped with the graphite crucible 1 into the cavity of the PVT furnace 3, open the valve 43 of the forced cooling system 4, set the pressure in the PVT furnace 3 below 1*10-3 mbar, and turn off the air Valve 43, and heat PVT furnace 3 to 2200°C.
保温阶段:PVT炉3达到2200 ℃时,向PVT炉3内充入氩气,将炉内压力设置在600±2 mbar,炉内温度保持在2200±10 ℃,将PVT炉3保温10个小时。Insulation stage: When PVT furnace 3 reaches 2200 ℃, fill PVT furnace 3 with argon gas, set the pressure in the furnace to 600±2 mbar, keep the temperature in the furnace at 2200±10 ℃, and keep PVT furnace 3 warm for 10 hours .
降温步骤:S10:PVT炉3停止加热并开始计时,将PVT炉3内氩气抽空并充入氦气,炉内压力控制在800±2 mbar,直至将PVT炉3的温度降低至1500 ℃;Cooling step: S10: PVT furnace 3 stops heating and starts timing. The argon gas in PVT furnace 3 is evacuated and filled with helium. The pressure in the furnace is controlled at 800±2 mbar until the temperature of PVT furnace 3 is reduced to 1500°C;
S11:将强冷系统4的阀门43打开,启动风机41,将炉内压力控制在800±2 mbar,热交换器42中进水温度控制在28 ℃以内,直至PVT炉3温度降低至50 ℃以下;S11: Open the valve 43 of the forced cooling system 4, start the fan 41, control the pressure in the furnace at 800±2 mbar, and control the inlet water temperature in the heat exchanger 42 within 28 ℃ until the temperature of the PVT furnace 3 drops to 50 ℃ the following;
S2:向炉内充入氩气直至炉内压力达到大气压,停止计时。S2: Fill the furnace with argon gas until the pressure in the furnace reaches atmospheric pressure, and stop the timing.
实施例4Example 4
实施例4中升温阶段和降温阶段的操作步骤与实施例3中保持一致。The operating steps of the heating stage and the cooling stage in Example 4 are consistent with those in Example 3.
降温步骤:S10:PVT炉3停止加热并开始计时,将PVT炉3内充入氩气,炉内压力控制在800±2 mbar,直至将PVT炉3的温度降低至1000 ℃;Cooling step: S10: PVT furnace 3 stops heating and starts timing, fills PVT furnace 3 with argon gas, and controls the pressure in the furnace at 800±2 mbar until the temperature of PVT furnace 3 is reduced to 1000°C;
S11:将PVT炉3内氩气抽空并充入氢气,强冷系统4的阀门43打开,启动风机41,将炉内压力控制在800±2 mbar,热交换器42中进水温度控制在28 ℃以内,直至PVT炉3温度降低至50 ℃以下;S11: Evacuate the argon gas in the PVT furnace 3 and fill it with hydrogen, open the valve 43 of the forced cooling system 4, start the fan 41, control the pressure in the furnace at 800±2 mbar, and control the inlet water temperature in the heat exchanger 42 at 28 ℃, until the temperature of PVT furnace 3 drops below 50 ℃;
S2:向炉内充入氩气直至炉内压力达到大气压,停止计时。S2: Fill the furnace with argon gas until the pressure in the furnace reaches atmospheric pressure, and stop the timing.
对比例1Comparative example 1
对比例1的升温阶段和保温阶段与实施例1中保持一致。The temperature rise stage and heat preservation stage of Comparative Example 1 remained the same as in Example 1.
降温阶段:PVT炉3停止加热并开始计时,炉内充入氩气,将炉内压力控制在800±2mbar左右,直至PVT炉3温度降低至50 ℃以下;Cooling stage: PVT furnace 3 stops heating and starts timing, the furnace is filled with argon gas, and the pressure in the furnace is controlled at about 800±2mbar until the temperature of PVT furnace 3 drops below 50°C;
S2:向PVT炉3充入氩气,炉内压力达到大气压后停止计时。S2: Fill PVT furnace 3 with argon gas, and stop timing after the pressure in the furnace reaches atmospheric pressure.
对比例2Comparative example 2
对比例2中升温阶段和降温阶段的操作步骤与实施例3中保持一致。The operating steps of the heating stage and the cooling stage in Comparative Example 2 are consistent with those in Example 3.
降温阶段:S10:PVT炉3停止加热并开始计时,炉内充入氩气,将炉内压力控制在800±2 mbar,直至将PVT炉3的温度降低至1500 ℃;Cooling stage: S10: PVT furnace 3 stops heating and starts timing, the furnace is filled with argon gas, and the pressure in the furnace is controlled at 800±2 mbar until the temperature of PVT furnace 3 is reduced to 1500°C;
S11:将强冷系统4的阀门43打开,启动风机41,将炉内压力控制在800±2 mbar,热交换器42中进水温度控制在28 ℃以内,直至PVT炉3温度降低至50 ℃以下;S11: Open the valve 43 of the forced cooling system 4, start the fan 41, control the pressure in the furnace at 800±2 mbar, and control the inlet water temperature in the heat exchanger 42 within 28 ℃ until the temperature of the PVT furnace 3 drops to 50 ℃ the following;
S2:向炉内充入氩气直至炉内压力达到大气压,停止计时。S2: Fill the furnace with argon gas until the pressure in the furnace reaches atmospheric pressure, and stop the timing.
将上述实施例1~实施例4、对比例1~对比例2的测试时间记录在下表1中。The test times of the above-mentioned Examples 1 to 4 and Comparative Examples 1 to 2 are recorded in Table 1 below.
表1 各实施例与对比例所用降温时间Table 1 Cooling time used in each example and comparative example
由实施例1~实施例4、对比例1~对比例2的对比结果分析表明,本申请的PVT炉快速降温方法能够缩短PVT炉的降温时间,从而提升生产效率。在最优的降温方案中,能够将降温时间缩短约60%,也即最快能够将降温速率提升60%。Analysis of the comparative results of Examples 1 to 4 and Comparative Examples 1 to 2 shows that the rapid cooling method of the PVT furnace of the present application can shorten the cooling time of the PVT furnace, thereby improving production efficiency. In the optimal cooling scheme, the cooling time can be shortened by about 60%, which means the cooling rate can be increased by 60% at the fastest.
此外,本申请还考虑到降温成本的问题,使用热交换器、风机在不显著增加成本的条件下提升降温速率,并且使用较为低廉的氩气充盈PVT炉使其压强达到大气压。In addition, this application also takes into account the issue of cooling costs, using heat exchangers and fans to increase the cooling rate without significantly increasing costs, and using relatively cheap argon gas to fill the PVT furnace to bring the pressure to atmospheric pressure.
本申请的PVT炉降温方法及装置,具有较好的降温效果,可以大幅缩短降温环节时间,提高生产效率。The PVT furnace cooling method and device of the present application have a good cooling effect, can greatly shorten the cooling process time, and improve production efficiency.
以上描述了本申请的基本原理、主要特征和本申请的优点。本行业的技术人员应该了解,本申请不受上述实施例的限制,上述实施例和说明书中描述的只是本申请的原理,在不脱离本申请精神和范围的前提下本申请还会有各种变化和改进,这些变化和改进都落入要求保护的本申请的范围内。本申请要求的保护范围由所附的权利要求书及其等同物界定。The above describes the basic principles, main features and advantages of the present application. Those skilled in the industry should understand that the present application is not limited by the above-mentioned embodiments. What is described in the above-mentioned embodiments and descriptions is only the principle of the present application. The present application will have various applications without departing from the spirit and scope of the present application. changes and improvements that fall within the scope of the claimed application. The scope of protection claimed in this application is defined by the appended claims and their equivalents.
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