CN117926216B - Semiconductor deposition equipment and cleaning method of semiconductor deposition equipment - Google Patents

Abstract

The present invention discloses a semiconductor deposition device and a cleaning method for the semiconductor deposition device. The semiconductor deposition device is provided with a lifting and shaking device in an exhaust duct connected to an exhaust port of a reaction chamber. The lifting and shaking device is provided on an inner wall of the exhaust duct close to the reaction chamber and extends to the exhaust port of the reaction chamber along the axial direction of the exhaust duct. A support portion is provided at an extended end of the lifting device. The lifting and shaking device is controlled to drive the support portion to rise from the exhaust duct to the exhaust port of the reaction chamber and move relative to the exhaust port to clear the blockage of the exhaust port of the reaction chamber. Therefore, the present invention can solve the blockage problem of the exhaust port of the reaction chamber without opening the reaction chamber, thereby improving the operation efficiency of the equipment. The exhaust duct in the present invention is provided with a duct expansion section. The radially expanded portion of the duct expansion section along the exhaust duct is used to place the lifting and shaking device in a retracted state, thereby not obstructing the gas flow in the exhaust duct.

Description

Semiconductor deposition equipment and cleaning method of semiconductor deposition equipment

Technical Field

The present invention relates to the technical field of semiconductor processing equipment, and in particular to a semiconductor deposition equipment and a cleaning method for the semiconductor deposition equipment.

Background technique

Thin film deposition on semiconductor wafers is a very important module in the semiconductor manufacturing process. Typical semiconductor deposition equipment mainly includes chemical vapor deposition equipment, physical vapor deposition equipment, plasma enhanced vapor deposition equipment, metal organic chemical vapor deposition (MOCVD) equipment, etc.

Generally, in the semiconductor thin film deposition process, as shown in FIG. 1 and FIG. 2 , a vacuum or low-pressure reaction chamber 100 is provided in the semiconductor deposition equipment, and a wafer carrier 103 is provided in the reaction chamber 100, and a wafer is placed on the wafer carrier 103. The deposition gas is introduced into the reaction chamber 100 through an air intake device (such as a shower head), and transported to the surface of one or more wafers placed on the wafer carrier for processing, so as to grow a film with a specific crystal structure. An exhaust port 101 is provided on the bottom wall of the reaction chamber 100, and the exhaust port is connected to an exhaust pipeline 102. The used deposition gas is discharged from the reaction chamber 100 through the exhaust port 101 located at the bottom of the reaction chamber through the exhaust pipeline 102. At the same time, in order to achieve uniform deposition, the wafer carrier 103 rotates at high speed driven by the rotating shaft 104.

Due to improper placement of the wafer, or the wafer is prone to deformation in a high temperature environment, the wafer will fly under the action of centrifugal force during the deposition process (the wafer is thrown out of the wafer carrier). If the thrown wafer falls on the exhaust port of the reaction chamber, it will cause the exhaust passage to be blocked. In addition, during the deposition process, parasitic deposition of reaction by-products will form near the exhaust port. As the number of growth furnaces accumulates, the deposition near the exhaust port becomes thicker and thicker, gradually blocking the exhaust port, and also affecting the gas flow in the reaction chamber. Therefore, it is necessary to clean the blocked exhaust port.

However, this cleaning process usually requires opening the reaction chamber, which is cumbersome and consumes a lot of production time.

Summary of the invention

In view of the above shortcomings of the prior art, the object of the present invention is to provide a semiconductor deposition equipment and a cleaning method for semiconductor deposition equipment to solve the blockage problem of the exhaust port of the reaction chamber, especially the blockage problem of the exhaust port caused by flying chips, without opening the reaction chamber, thereby improving the operating efficiency of the equipment.

In order to achieve the above-mentioned object and other related objects, the present invention provides a semiconductor deposition device, comprising:

a reaction chamber;

an exhaust port, located at the bottom of the reaction chamber;

An exhaust pipeline is connected to the exhaust port, the exhaust pipeline includes a pipeline body and a pipeline expansion section, the pipeline expansion section includes a pipeline body area and a shoulder, the diameter of the pipeline body area is the same as the inner diameter of the pipeline body, and the shoulder expands around the pipeline body area along the radial direction of the exhaust pipeline;

The lifting and shaking device is arranged on the inner wall of the pipeline expansion section, and the lifting and shaking device extends from the inner wall of the pipeline expansion section along the axial direction of the exhaust pipeline toward the exhaust port;

The support portion is located at the extended end of the lifting and shaking device, and both the lifting and shaking device and the support portion are covered by the shoulder portion;

The control device is arranged outside the exhaust pipeline, and is sealed through the exhaust pipeline and connected to the lifting and shaking device to control the movement of the lifting and shaking device, thereby driving at least part of the support part to extend into the reaction chamber and move relative to the exhaust port.

Optionally, the lifting and shaking device includes:

A transverse telescopic assembly, one end of which is connected to the inner wall of the pipeline expansion section, and the other end of which includes a telescopic portion extending in the radial direction of the exhaust pipeline, and a control device connected to the transverse telescopic assembly to control the telescopic portion to move in the radial direction of the exhaust pipeline;

A longitudinal lifting assembly, one end of which is connected to the telescopic portion so that the longitudinal lifting assembly moves in the radial direction of the exhaust pipe under the drive of the telescopic portion, and the other end includes a lifting portion extending along the axial direction of the exhaust pipe toward the exhaust port. The control device is connected to the longitudinal lifting assembly to control the movement of the lifting portion along the axial direction of the exhaust pipe. The support portion is arranged at the extended end of the lifting portion and is fixedly connected to the extended end of the lifting portion.

Optionally, the inner diameter of the pipeline expansion section does not exceed 3 times the inner diameter of the pipeline body.

Optionally, the contour of the support portion is an arc or ring that matches the contour of the pipeline body.

Optionally, a plurality of lifting and shaking devices are circumferentially distributed in the exhaust pipe, a plurality of control devices are arranged outside the exhaust pipe, the plurality of control devices correspond one-to-one to the plurality of lifting and shaking devices, and a plurality of support parts are arranged one-to-one at the extension end of the lifting part.

Optionally, when a plurality of support portions are simultaneously located in the pipeline body or the pipeline body region, the plurality of support portions are arranged in a circumferential direction of a surface where the inner contour of the pipeline body is located.

Optionally, gaps are provided between adjacent support portions, and the gaps allow each support portion to move along the radial direction of the pipeline body or the pipeline body region.

Optionally, a first pressure sensor is provided upstream of the exhaust port, and the first pressure sensor is connected to the control device to feed back a detection value of the first pressure sensor to the control device.

Optionally, a second pressure sensor is provided downstream of the lifting and shaking device in the exhaust pipeline, and the second pressure sensor is connected to the control device to feed back the detection values of the first pressure sensor and the second pressure sensor to the control device.

Optionally, a temperature sensor is provided near the exhaust port, and the temperature sensor is connected to the control device to feed back the detection value of the temperature sensor to the control device.

Optionally, the reaction chamber comprises a plurality of exhaust ports, and the plurality of exhaust ports are evenly distributed at the bottom of the reaction chamber.

Optionally, the transverse telescopic assembly includes an electric push rod, and the longitudinal lifting assembly also includes an electric push rod.

The present invention also provides a cleaning method for a semiconductor deposition device, the semiconductor deposition device comprising a reaction chamber, an exhaust port located at the bottom of the reaction chamber, and an exhaust pipeline connected to the exhaust port, comprising:

S0: installing an exhaust pipe including a pipe body and a pipe expansion section to an exhaust port, wherein the pipe expansion section includes a pipe body area and a shoulder, wherein the inner diameter of the pipe body area is the same as the inner diameter of the pipe body, and the shoulder extends around the pipe body area along the radial direction of the exhaust pipe;

S1: a lifting and shaking device is arranged on the inner wall of the pipeline expansion section, a control device is arranged outside the exhaust pipeline, the control device is sealed through the exhaust pipeline and connected to the lifting and shaking device, a support portion is arranged at the top of the lifting and shaking device, the support portion is located at an initial position so that the lifting and shaking device and the support portion are both covered by the shoulder;

S2: Determine whether the exhaust port is blocked;

S3: when it is determined that the exhaust port is blocked, the control device controls the lifting and shaking device to move, so that at least a portion of the support portion extends into the reaction chamber and moves relative to the exhaust port;

S4: until it is determined that the exhaust port is not blocked, the control device controls the lifting and shaking device to reset so that the supporting part is located at the initial position again.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

A first pressure sensor is arranged upstream of the exhaust port, and a detection value of the first pressure sensor is obtained.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

A second pressure sensor is arranged downstream of the lifting and shaking device in the exhaust pipeline to obtain a detection value of the second pressure sensor.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

Setting a first preset pressure, and determining whether a pressure detection value of the first pressure sensor exceeds the first preset pressure;

When the pressure detection value of the first pressure sensor exceeds the first preset pressure, it is determined that the exhaust port is blocked;

When the pressure detection value of the first pressure sensor is not greater than the first preset pressure, it is determined that the exhaust port is not blocked.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

Setting a second preset pressure, and determining whether a difference between the pressure detection values of the first pressure sensor and the second pressure sensor exceeds the second preset pressure;

When the difference between the pressure detection values exceeds a second preset pressure, it is determined that the exhaust port is blocked;

When the difference between the pressure detection values is not greater than the second preset pressure, it is determined that the exhaust port is not blocked.

Optionally, when a plurality of exhaust ports are evenly arranged at the bottom of the reaction chamber, and the plurality of exhaust pipes correspond to the plurality of exhaust ports one by one, the step of determining whether the exhaust ports are blocked in step S2 includes:

Obtaining detection values of the first pressure sensors corresponding to the exhaust ports and an average pressure value of the detection values of the first pressure sensors;

Setting a third preset pressure, and determining whether the difference between the detection value of each first pressure sensor and the average pressure value exceeds the third preset pressure;

When the difference between the detection value of any first pressure sensor and the average pressure value exceeds a third preset pressure, it is determined that the corresponding exhaust port is blocked;

When the difference between the detection value of any first pressure sensor and the average pressure value is not greater than the third preset pressure, it is determined that the corresponding exhaust port is not blocked.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

A temperature sensor is arranged near the exhaust port to obtain a temperature detection value of the temperature sensor.

Optionally, the step of determining whether the exhaust port is blocked in step S2 includes:

Setting a first preset temperature, and determining whether a temperature detection value of the temperature sensor exceeds the first preset temperature;

When the temperature detection value exceeds the first preset temperature, it is determined that the exhaust port is blocked;

When the temperature detection value is not greater than the first preset temperature, it is determined that the exhaust port is not blocked.

Optionally, when a plurality of exhaust ports are evenly arranged at the bottom of the reaction chamber, and the plurality of exhaust pipes correspond to the plurality of exhaust ports one by one, the step of determining whether the exhaust ports are blocked in step S2 includes:

Obtaining detection values of temperature sensors corresponding to each exhaust port and an average temperature value of the detection values of each temperature sensor;

Setting a second preset temperature, and determining whether the difference between the detection value of each temperature sensor and the average temperature value exceeds the average temperature value;

When the difference between the detection value of any temperature sensor and the average temperature value exceeds a second preset temperature, it is determined that the corresponding exhaust port is blocked;

When the difference between the detection value of any temperature sensor and the average temperature value is not greater than the second preset temperature, it is determined that the corresponding exhaust port is not blocked.

Optionally, in step S3, the step of controlling the lifting and shaking device to move by the control device so that at least a portion of the support portion extends into the reaction chamber and moves relative to the exhaust port includes:

Control the lifting and shaking device to move toward the center of the exhaust pipe so that the support part is no longer covered by the shoulder;

Controlling the lifting and shaking device to move along the axial direction of the exhaust pipeline toward the exhaust port, so that the support part contacts the obstruction of the exhaust port and extends into the reaction chamber;

The lifting and shaking device is controlled to perform repeated lifting and lowering motions along the axial direction of the exhaust pipe, or, at the same time, the lifting and shaking device is controlled to perform repeated telescopic motions along the radial direction of the exhaust pipe.

Optionally, multiple lifting and shaking devices are arranged on the inner wall of the expansion section of the pipeline, and multiple control devices are connected to the multiple lifting and shaking devices in a one-to-one correspondence to control the multiple lifting and shaking devices to perform repeated lifting and lowering movements along the axial direction of the exhaust pipeline in a staggered manner, or, at the same time, control the multiple lifting and shaking devices to perform repeated telescopic movements along the radial direction of the exhaust pipeline in a staggered manner.

Compared with the prior art, the semiconductor deposition equipment and the cleaning method of the semiconductor deposition equipment described in the present invention have at least the following beneficial effects:

The present invention arranges a lifting and shaking device in an exhaust pipeline connected to the exhaust port of a reaction chamber. The lifting and shaking device is arranged on the inner wall of the exhaust pipeline close to the reaction chamber and extends to the exhaust port of the reaction chamber along the axial direction of the exhaust pipeline. The support part is arranged at the extended end of the lifting device. The lifting and shaking device is controlled to drive the support part to rise from the exhaust pipeline to the exhaust port of the reaction chamber, so as to lift and shake the blockage of the exhaust port of the reaction chamber. Therefore, the present invention can solve the blockage problem of the exhaust port of the reaction chamber, especially the blockage problem of the exhaust port of the reaction chamber caused by flying pieces, and the present invention can clear the blockage of the exhaust port without opening the reaction chamber, thereby improving the operation efficiency of the equipment.

The exhaust pipeline in the present invention is provided with a pipeline expansion section, and the radially expanded part of the pipeline expansion section along the exhaust pipeline is used to place the lifting and shaking device in a retracted state, so that the gas flow in the exhaust pipeline will not be hindered when the semiconductor deposition equipment operates normally.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of a reaction chamber in the prior art;

FIG2 is a schematic diagram of the bottom structure of a reaction chamber in the prior art;

FIG3 is a schematic structural diagram of a semiconductor deposition device in Example 1 of the present invention;

FIG4 is a schematic structural diagram of an exhaust pipeline provided with a lifting and shaking device in Embodiment 1 of the present invention;

FIG5 is a schematic structural diagram of another exhaust pipeline provided with a lifting and shaking device in Embodiment 1 of the present invention;

6a-6b are schematic structural diagrams of a support portion in Embodiment 1 of the present invention;

FIG7 is a schematic structural diagram of a semiconductor deposition device in Example 1 of the present invention;

FIG8 is a schematic structural diagram of another semiconductor deposition device in Example 1 of the present invention;

FIG. 9 is a flow chart of a cleaning method for semiconductor deposition equipment in Embodiment 2 of the present invention.

List of reference numerals:

100 Reaction Chamber

101 Exhaust port

102 Exhaust pipe

1021 Pipeline body

1022 Pipeline expansion section

1022-1 Pipeline body area

1022-2 Shoulder

103 Wafer carrier

104 Rotation axis

105 Transmission cavity

200 Lifting and shaking device

201 Horizontal expansion component

202 Vertical lifting assembly

203 Support

300 Control Device

400 Filtration Device

501 First pressure sensor

502 Second pressure sensor

600 Temperature Sensor

700 Valves

Detailed ways

The following specific embodiments illustrate the embodiments of the present invention, and those familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component can be changed at will during actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the restrictive conditions that can be implemented in this application, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by the present invention.

Example 1

The present embodiment provides a semiconductor deposition device. Referring to FIG. 3 , the semiconductor deposition device includes a reaction chamber 100 , an exhaust port 101 , an exhaust pipeline 102 , a lifting and shaking device 200 , a support portion 203 , and a control device 300 .

Specifically, referring to FIG3 , the reaction chamber 100 includes a top and a bottom that are arranged opposite to each other, and an exhaust port 101 is arranged at the bottom of the reaction chamber 100, and the exhaust port 101 is used to discharge the reaction waste gas in the reaction chamber 100 to the outside of the reaction chamber 100. The number of the exhaust ports 101 can be one or more. When the bottom of the reaction chamber 100 includes a plurality of exhaust ports 101, the plurality of exhaust ports 101 are evenly distributed at the bottom of the reaction chamber 100.

The exhaust pipeline 102 is connected to the exhaust port 101 to guide the gas exhausted from the exhaust port 101. When there are multiple exhaust ports 101, there are also multiple exhaust pipelines 102, which are connected to the exhaust ports 101 in a one-to-one correspondence. Referring to FIG. 4 or 5, the exhaust pipeline 102 includes a pipeline body 1021 and a pipeline expansion section 1022, and the pipeline expansion section 1022 is coaxially arranged with the pipeline body 1021.

In one embodiment, as shown in FIG. 4 , the pipe body 1021 of the exhaust pipe 102 may be directly connected to the exhaust port 101, in which case the first port of the pipe body 1021 of the exhaust pipe 102 corresponds to the port of the exhaust port 101, the inner diameter of the pipe body 1021 is the same as the inner diameter of the exhaust port 101, and the second port of the pipe body 1021 is connected to the pipe expansion section 1022. Another pipe body 1021 may be connected downstream of the pipe expansion section 1022.

In another embodiment, as shown in FIG5 , the pipeline expansion section 1022 of the exhaust pipeline 102 may be directly connected to the exhaust port 101, in which case the first port of the pipeline expansion section 1022 corresponds to the port of the exhaust port 101, and the second port of the pipeline expansion section 1022 is connected to the pipeline body 1021. The inner diameter of the pipeline body 1021 may be the same as the inner diameter of the exhaust port 101, or the inner diameter of the pipeline body 1021 may be slightly larger than the inner diameter of the exhaust port 101, so as to smoothly extract particles and small flying pieces that enter the exhaust pipeline 102 through the exhaust port 101 of the reaction chamber 100, and prevent the particles and small flying pieces from falling into the pipeline expansion section 1022 and blocking the connection between the pipeline body 1021 and the pipeline expansion section 1022.

4 or 5, the pipeline expansion section 1022 includes a pipeline body area 1022-1 and a shoulder 1022-2. The inner diameter of the pipeline body area 1022-1 is the same as the inner diameter of the pipeline body 1021. The shoulder 1022-2 is arranged around the pipeline body area 1022-1 and is expanded along the radial direction of the exhaust pipeline 102, that is, the inner diameter d1 of the pipeline expansion section 1022 is greater than the inner diameter d2 of the pipeline body 1021. The shoulder 1022-2 is the part of the pipeline expansion section 1022 that is expanded relative to the pipeline body 1021. This part is used to accommodate the lifting and shaking device 200 and the support part 203 to avoid directly setting the lifting and shaking device 200 on the body of the exhaust pipeline 102. When the semiconductor deposition equipment is in normal operation, the lifting and shaking device 200 generates flow resistance to the original airflow conduction in the exhaust pipeline 102, affecting the normal exhaust of the reaction chamber 100. Furthermore, the inner diameter d1 of the pipeline expansion section 1022 is not more than 3 times the inner diameter d2 of the pipeline body 1021, that is, the inner diameter d1 of the pipeline expansion section 1022 is larger than the inner diameter d2 of the pipeline body 1021, and the ratio of d1:d2 does not exceed 3:1, so that when the semiconductor deposition equipment is operating normally, the lifting and shaking device 200 is accommodated in the shoulder 1022-2 of the pipeline expansion section 1022 and close to the inner wall of the pipeline expansion section 1022, so that the air guide channel surrounded by it is connected to the pipeline body 1021 below and the inner diameters of the two are equivalent or not much different, which can reduce or avoid the problem of poor airflow caused by the change in diameter of the exhaust pipe. If the ratio of d1:d2 is too large, the volume of the pipeline expansion section 1022 will be too large to affect the airflow.

Referring to Figure 4 or 5, the lifting and shaking device 200 is arranged on the inner wall of the pipeline expansion section 1022, that is, on the inner wall of the shoulder 1022-2. The lifting and shaking device 200 as a whole extends from the inner wall of the pipeline expansion section 1022 along the axial direction of the exhaust pipeline 102 toward the exhaust port 101. The lifting and shaking device 200 includes a transverse telescopic component 201 and a longitudinal lifting component 202, so as to have the functions of transverse telescopic and longitudinal lifting. In this embodiment, the lifting and shaking device 200 includes a transverse telescopic component 201 and a longitudinal lifting component 202, one end of the transverse telescopic component 201 is connected to the inner wall of the pipeline expansion section 1022, and the other end includes a telescopic portion extending in the radial direction of the exhaust pipeline 102, and the transverse telescopic component 201 is connected to the control device 300 to control the telescopic portion to move in the radial direction of the exhaust pipeline 102. Optionally, one end of the longitudinal lifting assembly 202 is connected to the telescopic part so that the longitudinal lifting assembly 202 moves along the radial direction of the exhaust pipe 102 under the drive of the telescopic part, and the other end includes a lifting part extending along the axial direction of the exhaust pipe 102 toward the exhaust port 101, and the control device 300 is also connected to the longitudinal lifting assembly 202 to control the lifting part to move along the axial direction of the exhaust pipe 102. Optionally, the transverse telescopic assembly 201 includes an electric push rod, and the longitudinal lifting assembly 202 also includes an electric push rod. For example, the telescopic part in the transverse telescopic assembly 201 is an electric push rod, and the lifting part in the longitudinal lifting assembly 202 is an electric push rod. Optionally, a plurality of lifting and shaking devices 200 are arranged in the exhaust pipe 102 around the circumference of the exhaust pipe 102, and a plurality of control devices 300 are arranged outside the exhaust pipe 102, and the plurality of control devices 300 correspond to the plurality of lifting and shaking devices 200 one by one.

Referring to Figures 4 or 5, the support portion 203 is located at the extended end of the lifting and shaking device 200, that is, the extended end of the longitudinal lifting component 202. The lifting and shaking device 200 and the support portion 203 are both accommodated and covered by the shoulder 1022-2. Optionally, the contour of the support portion 203 is an arc or ring that matches the contour of the pipeline body 1021. This embodiment takes two arc-shaped support portions 203 as an example, as shown in Figures 6a and 6b. When there are multiple lifting and shaking devices 200, multiple support portions 203 are arranged one by one at the extended end of the lifting portion. In addition, when multiple support portions 203 are simultaneously located in the pipeline body 1021 or the pipeline body area 1022-1, the multiple support portions 203 are arranged in the circumferential direction of the surface where the inner contour of the pipeline body 1021 is located, which can be arranged at intervals or without intervals. When the lifting and shaking device 200 is required to use the radial expansion and contraction function in the pipeline body 1021 or the pipeline body area 1022-1, a gap is provided between adjacent support parts 203, and the gap allows each support part 203 to move along the radial direction of the pipeline body 1021 or the pipeline body area 1022-1, that is, the support parts 203 need to be arranged at intervals. Conversely, when the lifting and shaking device 200 does not need to use the radial expansion and contraction function in the pipeline body 1021 or the pipeline body area 1022-1, the plurality of support parts 203 can be arranged without intervals along the circumferential direction of the inner contour of the pipeline body 1021.

3 , the control device 300 is disposed outside the exhaust pipe 102 , and is sealedly connected to the lifting and shaking device 200 through the exhaust pipe 102 to control the movement of the lifting and shaking device 200 , thereby driving at least a portion of the support portion 203 to extend into the reaction chamber 100 and move relative to the exhaust port 101 .

In order to determine whether the exhaust port 101 is blocked, the semiconductor deposition equipment can be provided with a sensor connected to the control device 300, such as a pressure sensor or a temperature sensor, to determine whether the exhaust port 101 is blocked according to the pressure fluctuation value or temperature fluctuation value in the reaction chamber 100 and the pressure difference fluctuation value upstream and downstream of the exhaust port 101. Specifically, the measurement of the temperature value and the pressure value can be achieved through the following embodiments. It should be noted that the connection between the sensor and the control device 300 described in the present application can be a direct communication connection or an electrical connection, and the signal of the sensor is directly transmitted to the control device 300, or it can be an indirect communication connection or an electrical connection, for example, the signal of the sensor is transmitted to the industrial computer of the semiconductor deposition equipment, and then the industrial computer transmits the signal to the control device 300. The upstream and downstream mentioned in the present application refer to the upstream of the gas flow and the downstream of the gas flow in the exhaust direction.

In one embodiment, referring to FIG. 7 , the semiconductor deposition device further includes a first pressure sensor 501, which is located upstream of the exhaust port 101. The first pressure sensor 501 is connected to the control device 300 to feed back the detection value of the first pressure sensor 501 to the control device 300. The control device 300 determines whether the exhaust port 101 is blocked by the fluctuation of the detection value of the first pressure sensor 501, and then determines whether it is necessary to control at least part of the support portion 203 driven by the lifting and shaking device 200 to extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to clean the blockage in the exhaust port 101. Exemplarily, if a flying wafer occurs in the reaction chamber 100 and the wafer is thrown off and falls on the exhaust port 101 of the reaction chamber 100, or the reaction by-products gather on the exhaust port 101, the exhaust pipe 102 will be blocked, which will affect the gas flow in the reaction chamber 100. At this time, the pressure value upstream of the exhaust port 101 will be larger than that of the normal operation of the semiconductor deposition device. Therefore, by installing the first pressure sensor 501 upstream of the exhaust port 101, the fluctuation of the detection value of the first pressure sensor 501 can be used to determine whether the exhaust port is blocked by flying wafers or reaction byproducts and whether it needs to be cleaned. If it is determined that cleaning is required, the control device 300 controls at least a portion of the support portion 203 driven by the lifting and shaking device 200 to extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction byproducts that have fallen on the exhaust port 101 from the exhaust port 101.

In an optional embodiment, referring to FIG. 7 , the semiconductor deposition apparatus further includes a first pressure sensor 501 and a second pressure sensor 502, wherein the first pressure sensor 501 is located upstream of the exhaust port 101. The second pressure sensor 502 is located downstream of the lifting and shaking device 200 in the exhaust pipe 102, and the first pressure sensor 501 and the second pressure sensor 502 are respectively connected to the control device 300 to feed back the detection values of the first pressure sensor 501 and the second pressure sensor 502 to the control device 300, and the control device 300 receives the detection values of the first pressure sensor 501 and the second pressure sensor 502, and determines whether the exhaust port 101 is blocked by the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502, and further determines whether it is necessary to control the support portion 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101 along the axial direction of the exhaust pipe 102, so as to clean the blockage in the exhaust port 101. Exemplarily, if flying wafers occur in the reaction chamber 100 and the wafers that are thrown off fall onto the exhaust port 101 of the reaction chamber 100, or if reaction byproducts gather on the exhaust port 101, the exhaust pipe 102 will be blocked. At this time, the pressure value upstream and downstream of the exhaust port 101 will become larger relative to the normal operation of the semiconductor deposition equipment. Therefore, by installing a first pressure sensor 501 upstream of the exhaust port 101 and installing a second pressure sensor 502 downstream of the lifting and shaking device 200 in the exhaust pipe 102, it can be determined whether the exhaust port needs to be cleaned by the fluctuation of the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502. If it is determined that cleaning is required, the control device 300 controls the support portion 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction byproducts that fall on the exhaust port 101 from the exhaust port 101.

Optionally, a valve 700 may be provided downstream of the lifting and shaking device 200 in the exhaust pipeline 102, and the pressure in the reaction chamber 100 may be maintained at the pressure required by the semiconductor deposition process by controlling the valve 700. In addition, the opening degree of the valve 700 may be used to determine whether the exhaust port 101 in the reaction chamber 100 is blocked. In this embodiment, the valve 700 may be a butterfly valve.

A filter device 400 can also be provided on the exhaust line 102, and the filter device 400 is provided at the corner of the exhaust line 102, corresponding to the exhaust port 101 of the reaction chamber 100, and the filter device 400 is provided between the lifting and shaking device 200 and the second pressure sensor 502. The filter device 400 can filter particulate matter or small debris discharged from the reaction chamber 100, avoid blockage of the exhaust line 102, and ensure the air tightness of the line. According to the first pressure sensor 501 and the second pressure sensor 502, the timing of updating the filter device 400 can be determined. Exemplarily, when the deposition reaction is completed, the manipulator transfers the wafer carrier 103 or the wafer on the wafer carrier 103 from the reaction chamber 100 to the wafer transfer chamber 105. At this time, it can be observed whether there is a wafer missing on the wafer carrier 103. If there is a wafer missing, it is judged that there is a flying wafer situation, and if there is no wafer missing, it is judged that there is no flying wafer situation. Alternatively, for example, as the number of growth furnaces increases, the parasitic deposition of reaction byproducts near the exhaust port 101 becomes thicker and thicker, gradually blocking the exhaust port 101. Therefore, it is also possible to observe whether the number of growth furnaces of the semiconductor deposition equipment exceeds the preset number of furnaces. When there is no flying wafer situation and the number of growth furnaces does not exceed the preset number of furnaces, if the reading difference between the first pressure sensor 501 and the second pressure sensor 502 is large, it is determined that the exhaust port 101 is not blocked, but the filter device 400 needs to be replaced.

In an optional embodiment, referring to FIG. 8 , the semiconductor deposition device further includes a temperature sensor 600, which is located near the exhaust port 101, and is connected to the control device 300 to feed back the detection value of the temperature sensor 600 to the control device 300. The operator or the control device 300 determines whether the exhaust port 101 is blocked by the fluctuation of the detection value of the temperature sensor 600, and then determines whether it is necessary to control the support part 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101 to clean the obstruction blocked in the exhaust port 101. Exemplarily, if a flying wafer occurs in the reaction chamber 100 and the wafer is thrown off and falls on the exhaust port 101 of the reaction chamber 100, or the reaction by-products gather on the exhaust port 101, the exhaust pipe 102 will be blocked, which will affect the gas flow in the reaction chamber 100. At this time, the temperature near the exhaust port 101 will become higher than the normal operation state of the semiconductor deposition device. Therefore, by installing the temperature sensor 600 at the location, it can be determined whether the exhaust port at the location needs to be cleaned by the fluctuation of the detection value of the temperature sensor 600. If it is determined that cleaning is required, the control device 300 controls the support portion 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction byproducts that have fallen on the exhaust port 101 from the exhaust port 101.

In an optional embodiment, referring to FIG. 7 , a plurality of exhaust ports 101 may be provided in the reaction chamber 100 in this embodiment, and a plurality of exhaust pipes 102 correspond to the plurality of exhaust ports 101 one by one, and a lifting and shaking device 200 and a corresponding control device 300 are provided in each exhaust pipe 102, and a first pressure sensor 501 is provided upstream of each exhaust port 101, and each first pressure sensor 501 is respectively connected to the control device 300 provided on the corresponding exhaust port 101. Whether the detection value of the first pressure sensor 501 corresponding to each exhaust port 101 fluctuates relative to the average pressure value of the detection value of each first pressure sensor 501 can be used as a reference for whether each exhaust port 101 is blocked. For example, the control device 300 determines whether the exhaust port 101 corresponding to the first pressure sensor 501 is blocked by comparing the difference between the detection value of each first pressure sensor 501 and the average pressure value of the detection values of each first pressure sensor 501, and further determines whether it is necessary to control the support portion 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the corresponding exhaust port 101, so as to clean the obstruction blocked in the corresponding exhaust port 101. Exemplarily, if a wafer flying occurs in the reaction chamber 100 and the wafer is thrown off and falls on a certain exhaust port 101 of the reaction chamber 100, or the reaction by-products gather on the exhaust port 101, the exhaust pipeline 102 corresponding to the exhaust port will be blocked, which will affect the gas flow in the reaction chamber 100. At this time, the pressure value upstream of the exhaust port 101 will become larger than the pressure value upstream of other exhaust ports 101. Therefore, if the detection value of the first pressure sensor 501 corresponding to a certain exhaust port 101 is significantly higher than the detection values of the first pressure sensors 501 corresponding to other exhaust ports 101, that is, the detection value of the first pressure sensor 501 corresponding to a certain exhaust port 101 significantly exceeds the average pressure value, then it is determined that the exhaust port 101 is blocked, and the control device 300 corresponding to the exhaust port 101 controls the support part 203 driven by the lifting and shaking device 200 corresponding to the exhaust port 101 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction by-products that have fallen on the exhaust port 101 from the exhaust port 101. In another optional embodiment, referring to FIG. 7 , in this embodiment, a plurality of exhaust ports 101 may be provided in the reaction chamber 100, a plurality of exhaust pipes 102 correspond to the plurality of exhaust ports 101 one by one, a lifting and shaking device 200 and a corresponding control device 300 are provided in each exhaust pipe 102, a first pressure sensor 501 is provided upstream of each exhaust port 101, a second pressure sensor 502 is provided downstream of the lifting and shaking device 200 in each exhaust pipe 102, and each first pressure sensor 501 and second pressure sensor 502 are connected to the control device 300 provided on the corresponding exhaust port 101. Whether the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to each exhaust port 101 fluctuates relative to the average value of the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to each exhaust port 101 can be used as a reference for whether each exhaust port 101 is blocked. For example, the control device 300 determines whether the exhaust port 101 is blocked by comparing the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to a certain exhaust port 101 with the average value of the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to each exhaust port 101, and further determines whether it is necessary to control the support part 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101 to clear the blockage in the exhaust port 101. For example, if flying wafers occur in the reaction chamber 100 and the dropped wafers fall onto a certain exhaust port 101 of the reaction chamber 100, or reaction by-products gather on the exhaust port 101, the exhaust line 102 corresponding to the exhaust port will be blocked, affecting the gas flow in the reaction chamber 100. At this time, the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to the exhaust port 101 will become larger than the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to other exhaust ports 101. Therefore, if the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to a certain exhaust port 101 is significantly higher than the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to other exhaust ports 101, that is, the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to a certain exhaust port 101 is significantly higher than the average value of the difference between the detection values of the first pressure sensor 501 and the second pressure sensor 502 corresponding to each exhaust port 101, then it is determined that the exhaust port 101 is blocked, and the control device 300 corresponding to the exhaust port 101 controls the support part 203 driven by the lifting and shaking device 200 corresponding to the exhaust port 101 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction by-products that have fallen on the exhaust port 101 from the exhaust port 101.

In another optional embodiment, referring to FIG. 8 , in this embodiment, a plurality of exhaust ports 101 may be provided in the reaction chamber 100, a plurality of exhaust pipes 102 correspond to the plurality of exhaust ports 101 one by one, a lifting and shaking device 200 and a corresponding control device 300 are provided in each exhaust pipe 102, a temperature sensor 600 is provided near each exhaust port 101, and each temperature sensor 600 is connected to the control device 300 provided on the corresponding exhaust port 101. Whether the detection value of the temperature sensor 600 corresponding to each exhaust port 101 fluctuates relative to the average temperature value of the detection value of each temperature sensor 600 can be used as a reference for whether each exhaust port 101 is blocked. For example, the control device 300 determines whether the exhaust port 101 corresponding to the temperature sensor 600 is blocked by comparing the difference between the detection value of each temperature sensor 600 and the average temperature value of the detection values of each temperature sensor 600, and then determines whether it is necessary to control the support part 203 driven by the lifting and shaking device 200 to at least partially extend into the reaction chamber 100 and move relative to the corresponding exhaust port 101, so as to clean the obstruction blocked in the corresponding exhaust port 101. Exemplarily, if flying wafers occur in the reaction chamber 100 and the wafers that are thrown off fall on a certain exhaust port 101 of the reaction chamber 100, or reaction by-products gather on the exhaust port 101, the exhaust pipe 102 corresponding to the exhaust port will be blocked, which will affect the gas flow in the reaction chamber 100. At this time, the temperature value near the exhaust port 101 will become larger than the temperature value near other exhaust ports 101. Therefore, if the detection value of the temperature sensor 600 corresponding to a certain exhaust port 101 is significantly higher than the detection values of the temperature sensors 600 corresponding to other exhaust ports 101, that is, the detection value of the temperature sensor 600 corresponding to a certain exhaust port 101 significantly exceeds the average temperature value, then it is determined that the exhaust port 101 is blocked, and the control device 300 corresponding to the exhaust port 101 controls the support part 203 driven by the lifting and shaking device 200 corresponding to the exhaust port 101 to at least partially extend into the reaction chamber 100 and move relative to the exhaust port 101, so as to shake off the wafers or reaction by-products that have fallen on the exhaust port 101 from the exhaust port 101.

Example 2

This embodiment provides a cleaning method for a semiconductor deposition device. Referring to FIG. 9 , the cleaning method includes:

S0: installing an exhaust pipe including a pipe body and a pipe expansion section to an exhaust port, wherein the pipe expansion section includes a pipe body area and a shoulder, wherein the inner diameter of the pipe body area is the same as the inner diameter of the pipe body, and the shoulder expands around the pipe body area along the radial direction of the exhaust pipe;

Specifically, referring to FIG. 4 or 5, an exhaust pipe 102 is provided, the exhaust pipe 102 includes a pipe body 1021 and a pipe expansion section 1022, the pipe expansion section 1022 is coaxially arranged with the pipe body 1021, the pipe expansion section 1022 includes a pipe body area 1022-1 and a shoulder 1022-2, the inner diameter of the pipe body area 1022-1 is the same as the inner diameter of the pipe body 1021, the shoulder 1022-2 expands along the radial direction of the exhaust pipe 102 around the pipe body area 1022-1, and the shoulder 1022-2 is the part of the pipe expansion section 1022 that expands relative to the pipe body 1021. During installation, the pipe expansion section 1022 can be installed corresponding to the exhaust port 101, or the pipe body 1021 can be installed corresponding to the exhaust port 101, and the details can be referred to in Example 1, which is not limited in this embodiment.

S1: a lifting and shaking device is arranged on the inner wall of the pipeline expansion section, a control device is arranged outside the exhaust pipeline, the control device is sealed through the exhaust pipeline and connected to the lifting and shaking device, a support portion is arranged at the top of the lifting and shaking device, the support portion is located at an initial position so that the lifting and shaking device and the support portion are both covered by the shoulder;

Specifically, referring to FIG. 4 or 5, the lifting and shaking device 200 is arranged on the inner wall of the pipeline expansion section 1022, and the pipeline expansion section 1022 is used to accommodate the lifting and shaking device 200 and the support part 203. The lifting and shaking device 200 includes a transverse telescopic component 201 and a longitudinal lifting component 202. The transverse telescopic component 201 is fixed on the pipeline expansion section 1022, and a control device 300 is arranged outside the exhaust pipeline 102, so that the control device 300 passes through the exhaust pipeline 102 in a sealed manner and is respectively connected to the transverse telescopic component 201 and the longitudinal lifting component 202 of the lifting and shaking device 200. The support part 203 is arranged at the extended end of the longitudinal lifting component 202 of the lifting and shaking device 200, so that the support part 203 is located at an initial position so that the lifting and shaking device 200 and the support part 203 are both covered by the shoulder 1022-2.

S2: Determine whether the exhaust port is blocked;

Specifically, referring to FIG. 7 or 8, before determining whether the exhaust port 101 is blocked, it is possible to first observe whether there are flying chips in the reaction chamber 100 of the semiconductor deposition equipment. Generally, after the deposition reaction in the reaction chamber 100 is completed, the robot transfers the wafer carrier 103 or the wafer on the wafer carrier 103 from the reaction chamber 100 to the wafer transfer chamber 105. At this time, it can be observed whether there are missing wafers on the wafer carrier 103. If there are missing wafers, it is determined that there are flying chips. If there are no missing wafers, it is determined that there are no flying chips. When it is observed that there are flying chips in the reaction chamber 100, the next step is performed to determine whether the flying chips block the exhaust port 101 of the reaction chamber 100.

It should be noted that the exhaust port 101 may also be blocked due to other reasons besides flying wafers. For example, as the number of growth furnaces increases, the parasitic deposition of reaction byproducts near the exhaust port 101 becomes thicker and thicker, gradually blocking the exhaust port 101. Therefore, before determining whether the exhaust port 101 is blocked, it is also possible to first observe whether the number of growth furnaces of the semiconductor deposition equipment exceeds the preset number of furnaces. When it is observed that the number of growth furnaces exceeds the preset number of furnaces, the next step is performed to determine whether the reaction byproducts block the exhaust port 101 of the reaction chamber 100.

When determining whether the exhaust port 101 of the reaction chamber 100 is blocked, the following scheme can be used:

In one embodiment, referring to FIG. 7 , a first pressure sensor 501 is provided upstream of the exhaust port 101, and a detection value of the first pressure sensor 501 is obtained. A first preset pressure is set, and the preset pressure is used as a basis for determining whether the exhaust port 101 is blocked. After setting the first preset pressure and obtaining the detection value of the first pressure sensor 501, it is determined whether the pressure detection value of the first pressure sensor 501 exceeds the first preset pressure. When the pressure detection value of the first pressure sensor 501 exceeds the first preset pressure, it is determined that the exhaust port 101 is blocked. When the pressure detection value of the first pressure sensor 501 is not greater than the first preset pressure, it is determined that the exhaust port 101 is not blocked. The pressure value of the first preset pressure can be set according to the actual situation in the reaction chamber 100, and is not specifically limited here.

In one embodiment, referring to FIG. 7 , a first pressure sensor 501 is provided upstream of the exhaust port 101 to obtain a detection value of the first pressure sensor 501. A second pressure sensor 502 is provided downstream of the lifting and shaking device 200 in the exhaust pipe 102 to obtain a detection value of the second pressure sensor 502. A second preset pressure is set as a basis for determining whether the exhaust port 101 is blocked. According to the second preset pressure, the reading of the first pressure sensor 501, and the reading of the second pressure sensor 502, it is determined whether the difference in the pressure detection values between the first pressure sensor 501 and the second pressure sensor 502 exceeds the second preset pressure. When the difference in the pressure detection values exceeds the second preset pressure, it is determined that the exhaust port 101 is blocked. When the difference in the pressure detection values is not greater than the second preset pressure, it is determined that the exhaust port 101 is not blocked. In this embodiment, the second preset pressure value is 50 mPa. If the pressure difference (P1-P2) between the first pressure sensor 501P1 and the second pressure sensor 502P2 on the same exhaust pipeline 102 does not exceed 50 mPa, and the pressure floating range of the P1 value is within ±5%, it can be determined that the exhaust port 101 is not blocked. On the contrary, if the pressure difference (P1-P2) between the P1 value of the first pressure sensor 501 and the P2 value of the first pressure sensor 501 on the same exhaust pipeline 102 exceeds 50 mPa, and the pressure of the P1 value shows an increasing trend, it is determined that the exhaust port 101 is blocked.

Optionally, referring to FIG. 7 , a valve 700 may be provided downstream of the lifting and shaking device 200 in the exhaust pipe 102, and the valve 700 may be a butterfly valve. When judging whether the exhaust port 101 is blocked, the blockage of the exhaust port 101 may be judged based on the floating range of the pressure difference and the opening angle of the butterfly valve. When the pressure difference (P1-P2) between the P1 value of the first pressure sensor 501 and the P2 value of the first pressure sensor 501 on the same exhaust pipe 102 does not exceed 50 mPa, the pressure floating range of the P1 value of the first pressure sensor 501 is within ±5%, and the floating range of the opening angle of the butterfly valve is within ±5%, it can be determined that the exhaust port 101 is not blocked. When the pressure difference (P1-P2) between the P1 value of the first pressure sensor 501 and the P2 value of the first pressure sensor 501 on the same exhaust pipe 102 exceeds 50 mPa, the pressure of the P1 value of the first pressure sensor 501 is increasing, and the opening angle of the butterfly valve is increasing, the exhaust port 101 is blocked.

In one embodiment, referring to FIG. 7 , a plurality of exhaust ports 101 are evenly arranged at the bottom of the reaction chamber 100, and a plurality of exhaust pipes 102 correspond to the plurality of exhaust ports 101 one by one. A first pressure sensor 501 is arranged upstream of each exhaust port 101 to obtain the detection value of the first pressure sensor 501 corresponding to each exhaust port 101 and the average pressure value of the detection value of each first pressure sensor 501. A third preset pressure is set to determine whether the difference between the detection value of each first pressure sensor 501 and the average pressure value exceeds the third preset pressure. When the difference between the detection value of any first pressure sensor 501 and the average pressure value exceeds the third preset pressure, it is determined that the corresponding exhaust port 101 is blocked. When the difference between the detection value of any first pressure sensor 501 and the average pressure value is not greater than the third preset pressure, it is determined that the corresponding exhaust port 101 is not blocked.

In one embodiment, referring to FIG. 8 , a temperature sensor 600 is provided near the exhaust port 101, and a first preset temperature is set, and the first preset temperature is used as a basis for determining whether the exhaust port 101 is blocked. When determining whether the exhaust port 101 is blocked, it is determined whether the temperature detection value of the temperature sensor 600 exceeds the first preset temperature based on the reading of the temperature sensor 600 and the first preset temperature. When the temperature detection value exceeds the first preset temperature, it is determined that the exhaust port 101 is blocked. When the temperature detection value is not greater than the first preset temperature, it is determined that the exhaust port 101 is not blocked.

In one embodiment, referring to FIG. 8 , when a plurality of exhaust ports 101 are evenly arranged at the bottom of the reaction chamber 100, a plurality of exhaust pipes 102 correspond to the plurality of exhaust ports 101 one by one. A temperature sensor 600 is arranged near each exhaust port 101 to obtain the detection value of the temperature sensor 600 corresponding to each exhaust port 101 and the average temperature value of the detection value of each temperature sensor 600. A second preset temperature is set to determine whether the difference between the detection value of each temperature sensor 600 and the average temperature value exceeds the average temperature value. When the difference between the detection value of any temperature sensor 600 and the average temperature value exceeds the second preset temperature, it is determined that the corresponding exhaust port 101 is blocked. When the difference between the detection value of any temperature sensor 600 and the average temperature value is not greater than the second preset temperature, it is determined that the corresponding exhaust port 101 is not blocked.

S3: When it is determined that the exhaust port is blocked, the control device controls the lifting and shaking device to move, so that at least part of the support portion extends into the reaction chamber and moves relative to the exhaust port 101;

Specifically, referring to FIG. 4 or 5 and FIG. 7 , in actual operation, the movement and position of the lifting and shaking device 200 are controlled according to the actual blockage condition of the exhaust port 101 , and the following description will be made taking the blockage as a flying piece as an example.

When the flying flakes block the exhaust port 101, firstly, the lifting and shaking device 200 is controlled to move toward the center of the exhaust pipe 102, so that the support portion 203 is no longer covered by the shoulder 1022-2. Then, the lifting and shaking device 200 is controlled to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support portion 203 contacts the flying flakes at the exhaust port 101 and extends into the reaction chamber 100, and the flying flakes are pushed away from the exhaust port 101. Then, the lifting and shaking device 200 is controlled to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102, and the flying flakes are shaken off into the reaction chamber 100 away from the exhaust port 101. When the semiconductor deposition equipment is periodically maintained, the reaction chamber 100 is opened again, and the flying flakes in the reaction chamber 100 are cleaned up collectively. Alternatively, the lifting and shaking device 200 can also be controlled to perform repeated telescopic movements along the radial direction of the exhaust pipe 102 at the same time, so as to shake off the flying flakes more easily or more efficiently.

Specifically, the lifting and shaking device 200 includes a transverse telescopic component 201 and a longitudinal lifting component 202. The lifting and shaking device 200 can be moved toward the center of the exhaust pipe 102 by controlling the transverse telescopic component 201, so that the support portion 203 located at the top of the lifting and shaking device 200 is located in the pipe body area 1022-1 and is no longer covered by the shoulder 1022-2. Then, by controlling the longitudinal lifting component 202, the lifting and shaking device 200 moves toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support portion 203 contacts the flying pieces of the exhaust port 101 and extends into the reaction chamber 100 to push the flying pieces away. Then, the longitudinal lifting component 202 is controlled to make the support portion 203 perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102 to shake off the flying pieces. At this time, in order to shake off the flying pieces more easily or efficiently, the support part 203 can be repeatedly lifted and lowered along the axial direction of the exhaust pipe 102 while the lateral telescopic component 201 can be controlled to make the support part 203 repeatedly telescopic along the radial direction of the exhaust pipe 102.

Furthermore, in order to obtain a better shaking effect, multiple lifting and shaking devices 200 may be arranged on the inner wall of the pipeline expansion section 1022, and multiple control devices 300 may be connected to the multiple lifting and shaking devices 200 in a one-to-one correspondence, so as to control the multiple lifting and shaking devices 200 to perform repeated lifting and lowering movements along the axial direction of the exhaust pipeline 102 synchronously or staggered. Alternatively, multiple lifting and shaking devices 200 may be controlled to perform repeated telescopic movements along the radial direction of the exhaust pipeline 102 synchronously or staggered. In actual operation, the movement and position of one or more lifting and shaking devices 200 are controlled according to the actual blockage of the exhaust port 101.

When the flying flakes only cover a portion of the exhaust port 101, at least one lifting and shaking device 200 can be controlled to move toward the center of the exhaust duct 102, so that the support portion 203 located at the top of the lifting and shaking device 200 is located in the duct body area 1022-1, and the at least one lifting and shaking device 200 is controlled to move toward the exhaust port 101 along the axial direction of the exhaust duct 102, so that the top of the at least one lifting and shaking device 200 contacts the flying flakes at the exhaust port 101 and extends into the reaction chamber 100, pushing the flying flakes away from the exhaust port 101, and then controlling the at least one lifting and shaking device 200 to perform repeated lifting and lowering movements along the axial direction of the exhaust duct 102 to shake the flying flakes off into the reaction chamber 100 away from the exhaust port 101, and then opening the reaction chamber 100 when performing periodic maintenance on the semiconductor deposition equipment to clean up the flying flakes in the reaction chamber 100.

When the flying flakes completely cover or cover a large area of the exhaust port 101, multiple lifting and shaking devices 200 or all of the lifting and shaking devices 200 can be controlled to move toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the lifting and shaking device 200 is located in the pipe body area 1022-1, and the multiple or all of the lifting and shaking devices 200 are controlled to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the top of the multiple or all of the lifting and shaking devices 200 contacts the flying flakes at the exhaust port 101 and extends into the reaction chamber 100, so as to push the flying flakes away from the exhaust port 101, and then the multiple or all of the lifting and shaking devices 200 are controlled to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102 to shake the flying flakes off into the reaction chamber 100 away from the exhaust port 101. Among them, the multiple or all lifting and shaking devices 200 perform repeated lifting and lowering motions together along the axial direction of the exhaust pipe 102, and can perform repeated lifting and lowering motions together in the same direction or in different directions. In order to obtain a better shaking effect, the multiple or all lifting and shaking devices 200 can be controlled to perform repeated lifting and lowering motions along the axial direction of the exhaust pipe 102 at staggered times. For example, when a part of the lifting and shaking devices 200 moves upward along the axial direction of the exhaust pipe 102, another part of the lifting and shaking devices 200 moves downward along the axial direction of the exhaust pipe 102; more preferably, when one of the two adjacent lifting and shaking devices 200 moves upward along the axial direction of the exhaust pipe 102, the other lifting and shaking device 200 moves downward along the axial direction of the exhaust pipe 102.

In order to more easily or efficiently push away the flying flakes and increase the force points of the flying flakes, while at least one lifting and shaking device 200 can be repeatedly lifted and lowered along the axial direction of the exhaust duct 102, at least one control device 300 can be used to control the corresponding lifting and shaking device 200 to perform repeated telescopic movements along the radial direction of the exhaust duct 102, thereby shaking off the flying flakes into the reaction chamber 100 away from the exhaust port 101. When controlling a plurality of lifting and shaking devices 200 to perform repeated lifting and lowering motions along the axial direction of the exhaust pipe 102, at least one of the lifting and shaking devices 200 can be controlled to perform repeated telescopic motions along the radial direction of the exhaust pipe 102, or the plurality of lifting and shaking devices 200 can be controlled to perform repeated telescopic motions along the radial direction of the exhaust pipe 102. The plurality of lifting and shaking devices 200 can perform repeated telescopic motions in the same direction together, or can perform repeated telescopic motions in different directions. It should be noted that when the plurality of lifting and shaking devices 200 perform repeated telescopic motions in the same direction along the radial direction of the exhaust pipe 102 in the pipe body 1021 or the pipe body area 1022-1, the support parts 203 are arranged in the circumferential direction of the surface where the inner contour of the pipe body 1021 is located, and gaps are provided between adjacent support parts 203, and the gaps allow each support part 203 to move in the radial direction of the pipe body 1021 or the pipe body area 1022-1. Similarly, in order to obtain a better shaking effect, the multiple lifting and shaking devices 200 can be controlled to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102 at staggered peaks, and the multiple lifting and shaking devices 200 can be controlled to perform repeated telescopic movements along the radial direction of the exhaust pipe 102 at staggered peaks. For example, when a part of the lifting and shaking devices 200 moves in the first axial direction along the axial direction of the exhaust pipe 102 and in the first radial direction along the radial direction of the exhaust pipe 102, another part of the lifting and shaking devices 200 moves in the second axial direction along the axial direction of the exhaust pipe 102 and in the second radial direction along the radial direction of the exhaust pipe 102; more preferably, among two adjacent lifting and shaking devices 200, when one of the lifting and shaking devices 200 moves in the first axial direction along the axial direction of the exhaust pipe 102 and in the first radial direction along the radial direction of the exhaust pipe 102, another lifting and shaking device 200 moves in the second axial direction along the axial direction of the exhaust pipe 102 and in the second radial direction along the radial direction of the exhaust pipe 102. The first axial direction is either axially upward or axially downward, and the second axial direction is a direction opposite to the first axial direction; the first radial direction is either radially toward the central axis of the exhaust pipe 102 or radially away from the central axis of the exhaust pipe 102, and the second radial direction is a direction opposite to the first radial direction.

Referring to FIGS. 4, 5 and 6a-6b, taking the case where two lifting and shaking devices 200 are provided on the inner wall of the pipeline expansion section 1022 as an example, the step of making at least a portion of the support portion 203 extend into the reaction chamber 100 and move relative to the exhaust port 101 is specifically described. When the number of lifting and shaking devices 200 provided on the inner wall of the pipeline expansion section 1022 exceeds two, the operation can be performed with reference to this. The following six cleaning methods are referred to FIGS. 4, 5 and 6a-6b and combined with FIG. 7.

The first cleaning method: control one of the lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the lifting and shaking device 200 is located in the pipe body area 1022-1, and then control the lifting and shaking device 200 to move along the axial direction of the exhaust pipe 102 toward the exhaust port 101, so that the support part 203 at the top of the lifting and shaking device 200 contacts the flying pieces at the exhaust port 101 and extends into the reaction chamber 100, and pushes the flying pieces away from the exhaust port 101, and then control the lifting and shaking device 200 to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102 to shake the flying pieces off into the reaction chamber 100 away from the exhaust port 101.

The second cleaning method: control one of the lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the lifting and shaking device 200 is located in the pipe body area 1022-1, and then control the lifting and shaking device 200 to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support part 203 at the top of the lifting and shaking device 200 contacts the flying pieces at the exhaust port 101 and extends into the reaction chamber 100, and pushes the flying pieces away from the exhaust port 101, and then control the lifting and shaking device 200 to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102, and at the same time, control the lifting and shaking device 200 to perform repeated telescopic movements along the radial direction of the exhaust pipe 102, and shake the flying pieces off into the reaction chamber 100 away from the exhaust port 101.

The third cleaning method: control the two lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the two lifting and shaking devices 200 is located in the pipe body area 1022-1, and then control the two lifting and shaking devices 200 to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support part 203 at the top of the two lifting and shaking devices 200 contacts the flying pieces at the exhaust port 101 and extends into the reaction chamber 100, and pushes the flying pieces away from the exhaust port 101, and then control one of the lifting and shaking devices 200 to make repeated lifting and lowering movements along the axial direction of the exhaust pipe 102, and at the same time, control the two lifting and shaking devices 200 to make repeated telescopic movements in the same direction or staggered along the radial direction of the exhaust pipe 102, and shake off the flying pieces into the reaction chamber 100 away from the exhaust port 101.

The fourth cleaning method: control the two lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the two lifting and shaking devices 200 is located in the pipe body area 1022-1, and then control the two lifting and shaking devices 200 to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support parts 203 at the top of the two lifting and shaking devices 200 both contact the flying pieces at the exhaust port 101 and extend into the reaction chamber 100, and push the flying pieces away from the exhaust port 101, and then control the two lifting and shaking devices 200 to make repeated lifting and lowering movements in the same direction or staggered along the axial direction of the exhaust pipe 102, and shake the flying pieces into the reaction chamber 100 away from the exhaust port 101.

The fifth cleaning method: control the two lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the two lifting and shaking devices 200 is located in the pipe body area 1022-1, and then control the two lifting and shaking devices 200 to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support parts 203 at the top of the two lifting and shaking devices 200 both contact the flying pieces at the exhaust port 101 and extend into the reaction chamber 100, and push the flying pieces away from the exhaust port 101, and then control the two lifting and shaking devices 200 to make repeated lifting and lowering movements in the same direction or staggered along the axial direction of the exhaust pipe 102, and at the same time, control one of the lifting and shaking devices 200 to make repeated telescopic movements along the radial direction of the exhaust pipe 102, and shake off the flying pieces into the reaction chamber 100 away from the exhaust port 101.

The sixth cleaning method: control the two lifting and shaking devices 200 to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the two lifting and shaking devices 200 is located in the pipe body area 1022-1, and then control the two lifting and shaking devices 200 to move toward the exhaust port 101 along the axial direction of the exhaust pipe 102, so that the support parts 203 at the top of the two lifting and shaking devices 200 both contact the flying pieces at the exhaust port 101 and extend into the reaction chamber 100, and push the flying pieces away from the exhaust port 101, and then control the two lifting and shaking devices 200 to make repeated lifting and lowering movements in the same direction or staggered along the axial direction of the exhaust pipe 102, and at the same time, control the two lifting and shaking devices 200 to make repeated telescopic movements in the same direction or staggered along the radial direction of the exhaust pipe 102, and shake the flying pieces off into the reaction chamber 100 away from the exhaust port 101. When the blockage is a reaction by-product, this step is similar to the step when the blockage is a flying flake. The lifting and shaking device 200 is controlled to move radially toward the center of the exhaust pipe 102, so that the support part 203 located at the top of the lifting and shaking device 200 is located in the pipe body area 1022-1, and then the lifting and shaking device 200 is controlled to move along the axial direction of the exhaust pipe 102 toward the exhaust port 101, at least partially extending into the reaction chamber, and then the lifting and shaking device 200 is used to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102, or the lifting and shaking device 200 is used to perform repeated lifting and lowering movements along the axial direction of the exhaust pipe 102 and repeated telescopic movements along the radial direction of the exhaust pipe 102, to shake the reaction by-products to loosen and break them, and then they fall along the exhaust pipe 102 and are sucked away by the vacuum pump at the end of the exhaust pipe 102, or are captured by the filtering device 400 installed on the exhaust pipe 102. The specific process will not be repeated.

S4: until it is determined that the exhaust port is not blocked, the control device controls the lifting and shaking device to reset so that the supporting part is located at the initial position again.

Referring to FIG. 7 or 8, after the flying pieces or blockages of the exhaust port 101 are cleared, referring to step S2, a sensor connected to the control device 300, such as a pressure sensor or a temperature sensor, is set to determine whether the blockage of the exhaust port 101 has been cleared according to whether the pressure fluctuation value or the temperature fluctuation value in the reaction chamber 100 and the pressure difference fluctuation value upstream and downstream of the exhaust port 101 are within a preset range. When it is determined that the exhaust port 101 is not blocked, the corresponding lifting and shaking device 200 is controlled by the control device 300 to move in a direction away from the reaction chamber 100, and the lifting and shaking device 200 is completely retracted to the initial position in the exhaust pipeline 102, that is, it is relocated in the pipeline expansion section 1022, and the lifting and shaking device 200 and the support part 203 are covered by the shoulder to reserve sufficient exhaust channels for the normal operation of the semiconductor deposition equipment. At this point, the blockage cleaning process of the exhaust port 101 is completed.

The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.

Claims (21)

1. A semiconductor deposition device, comprising: a reaction chamber; an exhaust port, located at the bottom of the reaction chamber; an exhaust pipeline, connected to the exhaust port, the exhaust pipeline comprising a pipeline body and a pipeline expansion section, the pipeline expansion section comprising a pipeline body area and a shoulder, the diameter of the pipeline body area is the same as the inner diameter of the pipeline body, and the shoulder expands around the pipeline body area along the radial direction of the exhaust pipeline; A lifting and shaking device is arranged on the inner wall of the pipeline expansion section, and the lifting and shaking device is covered by the shoulder and extends from the inner wall of the pipeline expansion section along the axial direction of the exhaust pipeline toward the exhaust port, and the lifting and shaking device includes a transverse telescopic component and a longitudinal lifting component; one end of the transverse telescopic component is connected to the inner wall of the pipeline expansion section, and the other end includes a telescopic portion extending along the radial direction of the exhaust pipeline; one end of the longitudinal lifting component is connected to the telescopic portion so that the longitudinal lifting component moves along the radial direction of the exhaust pipeline under the drive of the telescopic portion, and the other end includes a lifting portion extending along the axial direction of the exhaust pipeline toward the exhaust port; A support portion, fixedly connected to the extended end of the lifting portion and covered by the shoulder portion; A control device is arranged outside the exhaust pipeline, and is sealed through the exhaust pipeline and connected to the transverse telescopic assembly and the longitudinal lifting assembly respectively, so as to control the movement of the lifting and shaking device, thereby driving at least a part of the support portion to extend into the reaction chamber and move relative to the exhaust port; The control device controls the transverse telescopic assembly to move the lifting and shaking device toward the center of the exhaust duct, so that the support portion located at the top of the lifting and shaking device is located in the duct body area and is no longer covered by the shoulder portion, and then controls the longitudinal lifting assembly to move the lifting and shaking device along the axial direction of the exhaust duct toward the exhaust port, so that the support portion contacts the blockage of the exhaust port and extends into the reaction chamber. The control device controls the longitudinal lifting assembly to make the support portion perform repeated lifting and lowering movements along the axial direction of the exhaust duct, or, at the same time, controls the transverse telescopic assembly to make the support portion perform repeated telescopic movements along the radial direction of the exhaust duct. 2. The semiconductor deposition equipment according to claim 1 is characterized in that the inner diameter of the pipeline expansion section does not exceed 3 times the inner diameter of the pipeline body. 3 . The semiconductor deposition equipment according to claim 1 , wherein the contour of the support portion is an arc or ring that matches the contour of the pipeline body. 4. The semiconductor deposition equipment according to claim 3 is characterized in that a plurality of the lifting and shaking devices are circumferentially distributed in the exhaust duct, a plurality of the control devices are arranged outside the exhaust duct, the plurality of the control devices correspond one-to-one to the plurality of the lifting and shaking devices, and the plurality of the supporting parts are arranged one-to-one at the extension end of the lifting part. 5. The semiconductor deposition equipment according to claim 4 is characterized in that, when the plurality of support portions are simultaneously located in the pipeline body or in the pipeline body area, the plurality of support portions are arranged along the circumferential direction of the surface where the inner contour of the pipeline body is located. 6 . The semiconductor deposition equipment according to claim 5 , wherein a gap is provided between adjacent support portions, and the gap allows each support portion to move along a radial direction of the pipeline body or the pipeline body area. 7. The semiconductor deposition equipment according to claim 1 is characterized in that a first pressure sensor is arranged upstream of the exhaust port, and the first pressure sensor is connected to the control device to feed back the detection value of the first pressure sensor to the control device. 8. The semiconductor deposition equipment according to claim 7 is characterized in that a second pressure sensor is arranged downstream of the lifting and shaking device in the exhaust pipeline, and the second pressure sensor is connected to the control device to feed back the detection values of the first pressure sensor and the second pressure sensor to the control device. 9 . The semiconductor deposition equipment according to claim 1 , wherein a temperature sensor is provided near the exhaust port, and the temperature sensor is connected to the control device to feed back the detection value of the temperature sensor to the control device. 10 . The semiconductor deposition device according to claim 7 , wherein the reaction chamber comprises a plurality of exhaust ports, and the plurality of exhaust ports are evenly distributed at the bottom of the reaction chamber. 11. The semiconductor deposition equipment according to claim 1 is characterized in that the lateral telescopic assembly includes an electric push rod, and the longitudinal lifting assembly also includes an electric push rod. 12. A method for cleaning a semiconductor deposition device, the semiconductor deposition device comprising a reaction chamber, an exhaust port located at the bottom of the reaction chamber, and an exhaust pipeline connected to the exhaust port, characterized in that it comprises: S0: installing the exhaust pipe including a pipe body and a pipe expansion section to the exhaust port, wherein the pipe expansion section includes a pipe body area and a shoulder, the diameter of the pipe body area is the same as the inner diameter of the pipe body, and the shoulder expands around the pipe body area along the radial direction of the exhaust pipe; S1: A lifting and shaking device is arranged on the inner wall of the pipeline expansion section, the lifting and shaking device comprises a transverse telescopic component and a longitudinal lifting component, one end of the transverse telescopic component is connected to the inner wall of the pipeline expansion section, and the other end comprises a telescopic portion extending in the radial direction of the exhaust pipeline, one end of the longitudinal lifting component is connected to the telescopic portion, and the other end comprises a lifting portion extending in the axial direction of the exhaust pipeline toward the exhaust port, a control device is arranged outside the exhaust pipeline, so that the control device passes through the exhaust pipeline in a sealed manner and is respectively connected to the transverse telescopic component and the longitudinal lifting component, a support portion is arranged at the top end of the lifting and shaking device, so that the support portion is located at an initial position so that the lifting and shaking device and the support portion are both covered by the shoulder; S2: Determine whether the exhaust port is blocked; S3: when it is determined that the exhaust port is blocked: controlling the transverse telescopic assembly through the control device to move the lifting and shaking device toward the center of the exhaust pipe, so that the support portion located at the top of the lifting and shaking device is located in the pipe body area and is no longer covered by the shoulder; Then, the control device controls the longitudinal lifting assembly to move the lifting and shaking device along the axial direction of the exhaust pipe toward the exhaust port, so that the support part contacts the obstruction of the exhaust port and extends into the reaction chamber; Then, the control device controls the longitudinal lifting assembly to make the support part repeatedly lift and lower along the axial direction of the exhaust pipe, or simultaneously controls the transverse telescopic assembly to make the support part repeatedly telescopic along the radial direction of the exhaust pipe; S4: until it is determined that the exhaust port is not blocked, the control device controls the lifting and shaking device to reset so that the supporting part is located at the initial position again. 13. The cleaning method of semiconductor deposition equipment according to claim 12, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: A first pressure sensor is arranged upstream of the exhaust port to obtain a detection value of the first pressure sensor. 14. The cleaning method of semiconductor deposition equipment according to claim 13, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: A second pressure sensor is arranged downstream of the lifting and shaking device in the exhaust pipeline to obtain a detection value of the second pressure sensor. 15. The cleaning method of semiconductor deposition equipment according to claim 13, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: Setting a first preset pressure, and determining whether a pressure detection value of the first pressure sensor exceeds the first preset pressure; When the pressure detection value of the first pressure sensor exceeds the first preset pressure, it is determined that the exhaust port is blocked; When the pressure detection value of the first pressure sensor is not greater than the first preset pressure, it is determined that the exhaust port is not blocked. 16. The cleaning method of semiconductor deposition equipment according to claim 14, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: Setting a second preset pressure, and determining whether a difference between the pressure detection values of the first pressure sensor and the second pressure sensor exceeds the second preset pressure; When the difference between the pressure detection values exceeds the second preset pressure, it is determined that the exhaust port is blocked; When the difference between the pressure detection values is not greater than the second preset pressure, it is determined that the exhaust port is not blocked. 17. The cleaning method of semiconductor deposition equipment according to claim 13, characterized in that when a plurality of exhaust ports are evenly arranged at the bottom of the reaction chamber, and a plurality of exhaust pipes correspond to a plurality of exhaust ports one by one, the step of determining whether the exhaust ports are blocked in step S2 comprises: obtaining a detection value of the first pressure sensor corresponding to each of the exhaust ports and an average pressure value of the detection values of each of the first pressure sensors; Setting a third preset pressure, and determining whether the difference between the detection value of each of the first pressure sensors and the average pressure value exceeds the third preset pressure; When the difference between the detection value of any one of the first pressure sensors and the average pressure value exceeds the third preset pressure, it is determined that the corresponding exhaust port is blocked; When the difference between the detection value of any one of the first pressure sensors and the average pressure value is not greater than the third preset pressure, it is determined that the corresponding exhaust port is not blocked. 18. The cleaning method of semiconductor deposition equipment according to claim 12, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: A temperature sensor is arranged near the exhaust port to obtain a temperature detection value of the temperature sensor. 19. The cleaning method of semiconductor deposition equipment according to claim 18, characterized in that the step of determining whether the exhaust port is blocked in step S2 comprises: Setting a first preset temperature, and determining whether the temperature detection value of the temperature sensor exceeds the first preset temperature; When the temperature detection value exceeds the first preset temperature, determining that the exhaust port is blocked; When the temperature detection value is not greater than the first preset temperature, it is determined that the exhaust port is not blocked. 20. The cleaning method of semiconductor deposition equipment according to claim 18, characterized in that when a plurality of exhaust ports are evenly arranged at the bottom of the reaction chamber, and a plurality of exhaust pipes correspond to the plurality of exhaust ports one by one, the step of determining whether the exhaust ports are blocked in step S2 comprises: obtaining detection values of the temperature sensors corresponding to the exhaust ports and an average temperature value of the detection values of the temperature sensors; Setting a second preset temperature, and determining whether the difference between the detection value of each temperature sensor and the average temperature value exceeds the average temperature value; When the difference between the detection value of any temperature sensor and the average temperature value exceeds the second preset temperature, it is determined that the corresponding exhaust port is blocked; When the difference between the detection value of any temperature sensor and the average temperature value is not greater than the second preset temperature, it is determined that the corresponding exhaust port is not blocked. 21. The cleaning method of the semiconductor deposition equipment according to claim 12 is characterized in that a plurality of the lifting and shaking devices are arranged on the inner wall of the pipeline expansion section, and a plurality of the control devices are connected to the plurality of the lifting and shaking devices in a one-to-one correspondence to control the plurality of lifting and shaking devices to perform repeated lifting and lowering movements along the axial direction of the exhaust pipeline in a staggered manner, or, at the same time, control the plurality of lifting and shaking devices to perform repeated telescopic movements along the radial direction of the exhaust pipeline in a staggered manner.