CN118007090B

CN118007090B - Semiconductor process chamber

Info

Publication number: CN118007090B
Application number: CN202410160235.0A
Authority: CN
Inventors: 刘建军; 纪安宽; 邓斌; 张钦彤
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2024-02-04
Filing date: 2024-02-04
Publication date: 2025-06-24
Anticipated expiration: 2044-02-04
Also published as: CN118007090A

Abstract

The application discloses a semiconductor process chamber, and relates to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body and a base component, wherein a deposition disc can be placed in an accommodating space of the chamber body and can be switched between a first position and a second position, the deposition disc is positioned above the base component under the condition that the deposition disc is positioned at the first position, the base component can support the deposition disc to carry out a deposition process, plasmas capable of bombarding the deposition disc are generated in the accommodating space to form a protective layer on the inner surface of the chamber body and the surface of the base component, and the deposition disc is staggered with the base component under the condition that the deposition disc is positioned at the second position, and the base component can support a wafer to carry out a wafer processing process. The scheme can solve the problems that the actual service time of the process chamber and the maintenance cost of the process chamber are high due to the fact that pollution particles are out of standard easily in the process chamber and the pollution risk of wafers is high in the pre-reduction process, and the open cavity maintenance is affected.

Description

Semiconductor process chamber

Technical Field

The application belongs to the technical field of semiconductors, and particularly relates to a semiconductor process chamber.

Background

In the process of processing a wafer, for example, before film deposition, a plasma of a gas such as argon, ammonia, hydrogen, etc. is generally used to pre-clean the wafer to remove impurities such as oxides on the surface of the wafer. Specifically, gases such as argon, helium or hydrogen introduced into a semiconductor process chamber are excited by radio frequency energy to form plasma, so that chemical reaction treatment and physical bombardment are carried out on the wafer, and impurities on the surface of the wafer are removed.

However, in practical application, after a long-time continuous pre-cleaning process is performed, the problem that the content of the semiconductor process chamber is easy to exceed the standard of pollution particles can be solved only by means of cavity opening, sleeve replacement and the like, so that the practical service time of the process chamber is influenced, the risk of polluting wafers is greatly improved, the periodic cavity opening maintenance period is short, and the maintenance cost of the process chamber is greatly increased.

Disclosure of Invention

The embodiment of the application aims to provide a semiconductor process chamber, which can solve the problems that the actual service time of the process chamber and the maintenance cost of the process chamber are high, which are caused by the fact that pollution particles are out of standard easily in the process chamber and pollution risks of wafers are high and cavity opening maintenance are influenced in the prior process of pre-cleaning.

In order to solve the technical problems, the application is realized as follows:

The embodiment of the application provides a semiconductor process chamber, which comprises a chamber body and a base component, wherein the base component is arranged in an accommodating space of the chamber body in a lifting manner, a deposition disc can be placed in the accommodating space, the deposition disc can be switched between a first position and a second position of the accommodating space,

When the deposition disc is positioned at the first position, the deposition disc is positioned above a base assembly, and the base assembly can support the deposition disc to perform a deposition process, so that plasmas capable of bombarding the deposition disc are generated in the accommodating space to form a protective layer on the inner surface of the chamber body and the surface of the base assembly;

With the deposition disc in the second position, the deposition disc is offset from the susceptor assembly, which may support a wafer for a wafer processing process.

In the embodiment of the application, a deposition disc is placed in an accommodating space of a chamber body, the deposition disc can be switched between a first position and a second position of the accommodating space, the deposition disc is positioned above a base component under the condition that the deposition disc is positioned at the first position, the base component can support the deposition disc to carry out a deposition process, plasma which can bombard the deposition disc is generated in the accommodating space so as to form a protective layer on the inner surface of the chamber body and the surface of the base component, and the deposition disc is staggered with the base component under the condition that the deposition disc is positioned at the second position, and the base component can support a wafer to carry out a wafer processing process. In the wafer processing process, the protective layer can effectively prevent the pollution particles on the inner surface of the chamber body and the surface of the base from falling off, so that the pollution particles in the accommodating space of the chamber body are reduced, the risk of polluting wafers is reduced, and the frequent cavity opening and sleeve replacement can be avoided, thereby prolonging the actual service cycle of the process chamber and reducing the maintenance cost of the process chamber.

Drawings

Fig. 1 to 3 are schematic structural views of a semiconductor process chamber according to an embodiment of the present application in different states;

FIG. 4 is a schematic view of a cover ring according to an embodiment of the present application;

FIG. 5 is a schematic view of a cover ring and an ion filter according to an embodiment of the present application;

fig. 6 to 7 are schematic structural views of a target material according to an embodiment of the present application at different viewing angles;

fig. 8 to 9 are schematic structural views of an ion filter according to an embodiment of the present application at different viewing angles.

Reference numerals illustrate:

100-chamber body, 110-main portion, 120-bulge, 121-support, 121 a-first support, 121 b-second support, 130-dome;

200-base components, 210-bases, 211-bearing surfaces, 220-cover rings, 221-matching surfaces, 221 a-top surfaces, 221 b-peripheral surfaces, 222-positioning grooves, 222 a-first supporting surfaces, 223-mounting grooves, 223 a-second supporting surfaces and 223a 1-limit grooves;

300-deposition plate, 310-inclined surface;

400-radio frequency assembly, 410-radio frequency coil, 420-first radio frequency source, 430-second radio frequency source;

500-ion filter, 510-limit bump, 520-through hole;

600-rotating member, 610-rotating shaft, 620-supporting arm;

700-shield, 710-upper shield, 720-lower shield;

800-wafer;

910-first adapter, 920-second adapter.

Detailed Description

The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that some, but not all embodiments of the application are described. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged, as appropriate, such that embodiments of the present application may be implemented in sequences other than those illustrated or described herein, and that the objects identified by "first," "second," etc. are generally of a type, and are not limited to the number of objects, such as the first object may be one or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.

The semiconductor process chamber provided by the embodiment of the application is described in detail below by means of specific embodiments and application scenarios thereof with reference to the accompanying drawings.

As shown in fig. 1 to 9, the embodiment of the application discloses a semiconductor process chamber, which comprises a chamber body 100 and a base assembly 200, wherein the base assembly 200 is arranged in an accommodating space of the chamber body 100 in a liftable manner, namely, the base assembly 200 can be lifted relative to the inner wall of the chamber body 100, a deposition disc 300 can be placed in the accommodating space of the chamber body 100, the deposition disc 300 can be switched between a first position and a second position of the accommodating space, the deposition disc 300 is positioned above the base assembly 200 under the condition that the deposition disc 300 is positioned at the first position, the base assembly 200 can support the deposition disc 300 to perform a deposition process, plasma capable of bombarding the deposition disc 300 is generated in the accommodating space so as to form a protective layer on the inner surface of the chamber body 100 and the surface of the base assembly 200, and the base assembly 200 is staggered with the deposition disc 300 positioned at the second position, and the base assembly 200 can support a wafer 800 to perform the wafer processing process.

It should be noted that, when the deposition process is performed, the susceptor assembly 200 further includes a thimble assembly (not shown), and when the deposition process is performed, the deposition plate 300 is switched from the second position to the first position, the thimble assembly receives the deposition plate 300, and the susceptor assembly 200 will lift up to carry the deposition plate 300 to the process position for performing the process, and when the wafer processing process is required to be performed, the susceptor assembly 200 is lowered, and the deposition plate 300 is received by the thimble assembly, so that the deposition plate 300 is switched in the horizontal plane.

In the embodiment of the application, the protective layer can effectively prevent the pollution particles on the inner surface of the chamber body 100 and the surface of the base assembly 200 from falling off during the wafer processing process, so as to reduce the pollution particles in the accommodating space of the chamber body 100, thereby reducing the risk of polluting the wafer 800, and can avoid frequent cavity opening and sleeve replacement, thereby prolonging the actual service cycle of the process chamber and further reducing the maintenance cost of the process chamber. Therefore, the embodiment of the application can solve the problems that the pollution particles easily exceed the standard in the process chamber and the maintenance cost of the process chamber is high in the pre-reduction process at present.

It should be noted that, when the plasma bombards the deposition plate 300, atoms sputtered from the surface of the deposition plate 300 are deposited on the inner surface of the chamber body 100 and the surface of the susceptor assembly 200 to form a protective layer, and the material of the protective layer is the same as that of the deposition plate 300.

Optionally, when performing the wafer processing process, the process gases such as Ar, N ₂ may be introduced into the accommodating space of the chamber body 100, and of course, other process gases having reducibility (e.g., reducing gases containing hydrogen) may also be introduced.

Alternatively, the substrate of the deposition plate 300 may be made of metal such as stainless steel, aluminum alloy, or a non-metal material such as ceramic, quartz, semiconductor, etc., and the source material of the surface of the deposition plate 300 may be Ni, Y ₂O₃、Al、SiO₂, etc. other source materials that may be firmly attached to the inner surface of the chamber body 100 and the surface of the susceptor assembly 200, which is not particularly limited in the embodiment of the present application.

Further alternatively, the source material on the surface of the deposition plate 300 may be a material with better particle performance, such as Ni, Y ₂O₃, etc., which does not generate electromagnetic shielding to affect the rf feed-in material, which is advantageous for the purpose of improving the cleanliness within the chamber body 100.

In an alternative embodiment, the semiconductor process chamber further includes an ion filter 500, where the ion filter 500 is provided with a plurality of through holes 520, and hydrogen radicals can reach the surface of the wafer 800 through the through holes 520 and undergo a reduction reaction with oxides on the wafer 800, thereby achieving the purpose of pre-reducing the surface of the wafer 800. Alternatively, the ion filter 500 may be made of a metal material, and the neutralization after the ion contact is achieved through the potential ground, so as to filter out the ions, and enable the hydrogen radicals to pass through the through holes 520 to reach the surface of the wafer 800, thereby reducing the damage to the wafer 800. Alternatively, the chamber body 100 may be grounded, and the ion filter 500 may be electrically grounded through the chamber body 100.

Alternatively, the ion filter 500 may be switched between a first position and a second position of the receiving space of the chamber body 100, and the susceptor assembly 200 may support the ion filter 500 to perform the first pre-cleaning process when the deposition plate 300 is in the second position and the ion filter 500 is in the first position, i.e., the deposition plate 300 is staggered with respect to the susceptor assembly 200, and the susceptor assembly 200 may support the wafer 800 to perform the second pre-cleaning process when the ion filter 500 is above the susceptor assembly 200 and the deposition plate 300 is in the second position and the ion filter 500 is in the second position, i.e., both the deposition plate 300 and the ion filter 500 are staggered with respect to the susceptor assembly 200. In this scheme, the deposition process and the first pre-cleaning process may be alternatively performed, or the deposition process and the second pre-cleaning process may be alternatively performed, where a protective layer is deposited on the inner surface of the chamber body 100 and the surface of the susceptor assembly 200 by sputtering, then the deposition tray 300 is removed from the susceptor assembly 200, and the wafer 800 is directly pre-cleaned, or the ion filter 500 is supported on the susceptor assembly 200, and ions emitted to the wafer 800 are filtered by the ion filter 500, so that hydrogen radicals are emitted to the wafer 800, thereby pre-cleaning the wafer.

Of course, when the deposition process is performed, the ion filter 500 and the deposition plate 300 may be supported on the base assembly 200, and the deposition plate 300 may be located above the ion filter 500, and the ion filter 500 may be always supported on the base assembly 200 when the semiconductor process chamber is switched between the deposition process and the first pre-cleaning process, thereby reducing the operation steps, and the ion filter 500 is removed from the base assembly 200 only when the second pre-cleaning process is performed.

It should be noted that the wafer processing process described above includes the first pre-cleaning process and the second pre-cleaning process in the above embodiments.

Alternatively, the deposition plate 300 and the ion filter 500 may each be located in the same receiving chamber as the susceptor assembly 200, or in other embodiments, the receiving space includes a first receiving chamber and a second receiving chamber which are in communication, the chamber body 100 includes a main body 110 and a protrusion 120 connected to each other, the protrusion 120 is connected to a sidewall of the main body 110, the main body 110 has a first receiving chamber, the protrusion 120 has a second receiving chamber, the susceptor assembly 200 is liftably disposed in the first receiving chamber, i.e., a first position is located in the first receiving chamber, and at least one of the deposition plate 300 and the ion filter 500 is located in the second receiving chamber, i.e., a second position is located in the second receiving chamber. Specifically, when the deposition process is performed, the deposition plate 300 is supported on the base assembly 200, the ion filter 500 may be located in the second accommodating chamber, and at this time, atoms sputtered on the surface of the deposition plate 300 may be prevented from depositing on the surface of the ion filter 500, thereby reducing the aperture of the through hole 520 of the ion filter 500, which is beneficial to ensuring that the ion filter 500 has a better filtering efficiency, when the first pre-cleaning process is performed, the ion filter 500 is supported on the base assembly 200, the deposition plate 300 may be located in the second accommodating chamber, so as to prevent the plasma in the first accommodating chamber from bombarding the deposition plate 300, thereby preventing the plasma in the first accommodating chamber from depositing on the surface of the ion filter 500, when the second pre-cleaning process is performed.

Alternatively, the deposition plate 300 and the ion filter 500 may be placed side by side on the bottom wall of the second accommodating chamber, where the second accommodating chamber needs to be provided larger, and based on this, in another alternative embodiment, the side wall of the second accommodating chamber is provided with at least one supporting portion 121, where the supporting portion 121 is spaced from the bottom wall of the second accommodating chamber, and the supporting portion 121 is used to support the deposition plate 300 or the ion filter 500. The deposition tray 300 and the ion filter 500 may be supported on different support parts 121 when the second pre-cleaning process is performed, or one of the deposition tray 300 and the ion filter 500 may be supported on the support parts 121 and the other may be placed on the bottom wall of the second receiving chamber to sufficiently utilize the space of the second receiving chamber in the height direction to place the deposition tray 300 and the ion filter 500, thereby greatly reducing the size of the second receiving chamber and thus reducing the occupied space of the entire chamber body 100, the ion filter 500 may be supported on the support parts 121 or placed on the bottom wall of the second receiving chamber when the deposition process is performed, and the deposition tray 300 may be supported on the support parts 121 or placed on the bottom wall of the second receiving chamber when the first pre-cleaning process is performed. It can be seen that the support 121 can support at least one of the deposition disc 300 and the ion filter 500 such that there is a space between the supported deposition disc 300 and/or ion filter 500 and the bottom wall of the second receiving chamber that facilitates the taking and placing of the deposition disc 300 and ion filter 500.

Alternatively, the support 121 may have a semi-annular structure, so that the edge of the deposition disc 300 or the ion filter 500 is supported on the support 121, so that an adapter such as a robot can take the deposition disc 300 or the ion filter 500.

In an alternative embodiment, the number of the supporting parts 121 is at least two, and the at least two supporting parts 121 include a first supporting part 121a and a second supporting part 121b, one of the first supporting part 121a and the second supporting part 121b is used for supporting the deposition disc 300, the other is used for supporting the ion filter 500, the first supporting part 121a and the second supporting part 121b are located in the same second accommodating cavity, the first supporting part 121a and the second supporting part 121b are arranged at intervals along the height direction of the second accommodating cavity, that is, the first supporting part 121a and the second supporting part 121b are in a suspended state, so that the transfer member such as a manipulator extends below the first supporting part 121a or below the second supporting part 121b to support the deposition disc 300 or the ion filter 500 and transfer the transfer member into the first accommodating cavity.

Or in other embodiments, the number of the supporting parts 121 is at least two, the at least two supporting parts 121 include a first supporting part 121a and a second supporting part 121b, one of the first supporting part 121a and the second supporting part 121b is used for supporting the deposition disc 300, the other is used for supporting the ion filter 500, the number of the protruding parts 120 is at least two, and the at least two protruding parts include a first protruding part and a second protruding part, optionally, the first protruding part and the second protruding part are arranged at intervals along the circumferential direction of the main body part 110 to form two separate second accommodating cavities, the first supporting part 121a is arranged in the second accommodating cavity of the first protruding part, and the second supporting part 121b is arranged in the second accommodating cavity of the second protruding part, so that the deposition disc 300 and the ion filter 500 are separately placed and prevented from interfering with each other, so that the first accommodating cavity and the second accommodating cavity can move between the first accommodating cavity and the second accommodating cavity.

In another alternative embodiment, the semiconductor process chamber further includes a rotating member 600, at least a portion of the rotating member 600 is rotatably disposed in the chamber body 100, the rotating member 600 is capable of being lifted with respect to the first accommodating chamber, the deposition disc 300 or the ion filter 500 is supported on the rotating member 600, one end of the rotating member 600 is capable of extending below the supporting portion 121 to convey the deposition disc 300 or the ion filter 500 to the first position, alternatively, the rotating member 600 is capable of conveying the deposition disc 300 or the ion filter 500 to the thimble assembly of the base assembly 200 to support the deposition disc 300 or the ion filter 500 on the thimble assembly, then the end of the rotating member 600 for supporting the deposition disc 300 or the ion filter 500 is staggered from the base assembly 200, and then the base 210 of the base assembly 200 is lifted to support the deposition disc 300 or the ion filter 500 on the base 210. In this case, when the rotating member 600 conveys the deposition plate 300 or the ion filter 500, the rotating member 600 contacts the bottom surface of the deposition plate 300 or the ion filter 500, so that it is possible to prevent it from being scratched, which is advantageous for protecting the deposition plate 300 or the ion filter 500. Of course, the rotating member 600 may also convey the deposition plate 300 and the ion filter 500 by gripping, adsorbing, or the like.

Optionally, the rotating member 600 includes a rotating shaft 610 and a supporting arm 620, one end of the rotating shaft 610 is rotatably connected to the bottom wall of the chamber body 100, the other end of the rotating shaft 610 is connected to the supporting arm 620, the supporting arm 620 is bent with respect to the rotating shaft 610, the supporting arm 620 is used for supporting the deposition disc 300 or the ion filter 500, one end of the supporting arm 620 may extend below the supporting portion 121, and the rotating shaft 610 may rotate the supporting arm 620 to move the deposition disc 300 or the ion filter 500 between the second accommodating chamber and the first accommodating chamber.

Alternatively, the protruding portion 120 and the main body 110 may be in a split structure, so that the difficulty in sealing the assembly gap therebetween is relatively high, and in other embodiments, the protruding portion 120 and the main body 110 are in an integrated structure, so that the sealing performance of the accommodating space of the whole chamber body 100 is relatively high, which is beneficial to reducing the risk of leakage of the process gas, and the assembly is relatively simple.

In yet another alternative embodiment, the semiconductor process chamber further includes a rf assembly 400, the rf assembly 400 includes an rf coil 410, the rf coil 410 is embedded in the chamber body 100, hydrogen (possibly doped with He) is introduced into the accommodating space and rf energy is loaded into the accommodating space when the semiconductor process chamber performs the first pre-cleaning process, and process gases such as argon are introduced into the accommodating space when the semiconductor process chamber performs the second pre-cleaning process, and rf energy is loaded into the accommodating space by both the rf coil 410 and the base assembly 200 to generate more plasmas, so that the plasmas are pulled to bombard the surface of the wafer 800, thereby improving the process efficiency of the second pre-cleaning process. Therefore, the application can control the working states of the radio frequency coil 410 and the base assembly 200 according to different process requirements, thereby improving the process efficiency, and meanwhile, the semiconductor process chamber disclosed by the embodiment of the application can integrate various wafer processing processes, so that a plurality of semiconductor process chambers are not required to be arranged to execute different processing processes, which is beneficial to reducing the cost of the semiconductor process chambers.

Optionally, the rf assembly 400 further includes a first rf source 420 and a second rf source 430, where the first rf source 420 and the second rf source 430 are disposed outside the chamber body 100, the first rf source 420 is electrically connected to the rf coil 410 to ionize the process gas in the chamber body 100 and generate plasma, and the second rf source 430 is electrically connected to the susceptor assembly 200 to form rf energy on the carrying surface 211 of the susceptor assembly 200 for carrying the wafer 800, and the rf energy can provide a downward force to direct the plasma in the receiving space to the wafer 800.

In an alternative embodiment, the base assembly 200 includes a base 210 and a cover ring 220, the base 210 has a carrying surface 211 for carrying the wafer 800, and the cover ring 220 is disposed on an edge of the carrying surface 211, optionally, when the wafer 800 is placed on the carrying surface 211, the wafer 800 is located in the receiving space of the cover ring 220. Alternatively, the deposition plate 300 may be directly supported on a surface of the cover ring 220 facing away from the bearing surface 211, or a surface of the cover ring 220 facing away from the bearing surface 211 is provided with a positioning groove 222, a bottom surface of the positioning groove 222 is a first supporting surface 222a, and at least a portion of the deposition plate 300 may be located in the positioning groove 222, so that the deposition plate 300 is supported on the first supporting surface 222a. The positioning groove 222 can position the deposition disc 300 to avoid the deviation of the deposition disc 300 relative to the cover ring 220 during the process of the plasma bombarding the deposition disc 300 during the deposition process, thereby improving the stability of the deposition disc 300, and in addition, when at least part of the deposition disc 300 is positioned in the positioning groove 222, the deposition disc 300 is closer to the base 210, the radio frequency energy is stronger, thereby being beneficial to improving the bombardment efficiency of the plasma.

Optionally, the semiconductor process chamber further includes an ion filter 500, where the ion filter 500 is switchable between a first position and a second position, and when the ion filter 500 is located in the first position, the ion filter 500 may be directly supported on the first supporting surface 222a, where the ion filter 500 is closer to the wafer 800 when the first pre-cleaning process is performed, or in other embodiments, a surface of the cover ring 220 facing away from the supporting surface 211 is further provided with a mounting groove 223, where a bottom surface of the mounting groove 223 is a second supporting surface 223a, and the second supporting surface 223a is higher than the first supporting surface 222a, that is, a distance between the second supporting surface 223a and the supporting surface 211 is greater than a distance between the first supporting surface 222a and the supporting surface 211, and at least a portion of the ion filter 500 may be located in the mounting groove 223, so that the ion filter 500 is supported on the second supporting surface 223a. During the first pre-cleaning process, the distance between the ion filter 500 and the wafer 800 is long, and the ion filter 500 can collimate the hydrogen radicals passing through the through holes 520 thereof, thereby improving the pre-cleaning efficiency.

The second supporting surface 223a may be a plane, or one of the second supporting surface 223a and the ion filter 500 is provided with a limiting groove 223a1, and the other is provided with a limiting protrusion 510, and the limiting protrusion 510 is in limiting fit with the limiting groove 223a1, so as to limit the ion filter 500, prevent the ion filter 500 from being deviated during the first pre-cleaning process, and thus improve the stability of the ion filter 500. Optionally, the limiting protrusion 510 and the limiting groove 223a1 are both in an annular structure, so as to increase the contact area between the two, thereby improving the limiting stability. In addition, the cross-sectional shape of the limit projection 510 and the cross-sectional shape of the limit groove 223a1 may be arc-shaped, rectangular, V-shaped, or the like.

Alternatively, the second supporting surface 223a may be provided with a limiting groove 223a1, and the bottom surface of the ion filter 500 is provided with a limiting protrusion 510, which may facilitate the opening of the through hole 520 of the ion filter 500. Of course, the size of the ion filter 500 may be increased appropriately to open the limit groove 223a1 at the edge of the ion filter 500.

In an alternative embodiment, the semiconductor process chamber further includes a shielding member 700, the shielding member 700 is disposed in the accommodating space of the chamber body 100, the susceptor assembly 200 includes a susceptor 210 and a cover ring 220, the susceptor 210 has a carrying surface 211 for carrying the wafer 800, the cover ring 220 is disposed at an edge of the carrying surface 211, the cover ring 220 has a mating surface 221, when the semiconductor process chamber performs a deposition process or a wafer processing process, the mating surface 221 is in clearance fit with the shielding member 700, at this time, the dome 130 of the accommodating space of the chamber body 100, the shielding member 700, the cover ring 220 and the deposition disk 300 or the ion filter 500 enclose a process space, a process gas can be introduced into the process space through a gap between the mating surface 221 and the shielding member 700, and a plasma is formed in the process space, so as to prevent the plasma from leaking out from a side gap of the cover ring 220, and to enable the atoms sputtered on the surface of the deposition disk 300 to be deposited on an upper portion of an inner wall of the chamber body 100 when the deposition process is performed, and to deposit a protective layer only on an upper portion of the inner wall of the chamber body 100, so that the atoms sputtered on the surface of the deposition disk 300 are prevented from being deposited on a lower portion of the accommodating space, and the wafer can be easily polluted, and wafer cleaning process particles can be greatly shortened when the wafer cleaning process efficiency is not generated in the process space, and the wafer cleaning process space can be greatly shortened.

Alternatively, the dome 130 of the accommodating space of the chamber body 100 may be a plane or an arc surface, and when the dome 130 of the accommodating space is an arc surface, the curvature change thereof is small, which is advantageous for deposition of the protective layer, and has a focusing effect on plasma, thereby improving the process efficiency.

Optionally, the shielding member 700 includes an upper shielding member 710 and a lower shielding member 720, the upper shielding member 710 is disposed on an inner wall of the chamber body 100, the lower shielding member 720 is disposed on the base assembly 200, and the base assembly 200 may drive the lower shielding member 720 to lift so as to be engaged with the upper shielding member 710.

Optionally, the semiconductor process chamber further includes first and second adapters 910 and 920, the chamber body 100 includes upper and lower parts, the first and second adapters 910 and 920 are for connecting the upper and lower parts of the chamber body 100, and one end of the second adapter 920 may extend toward a central region of the receiving space of the chamber body 100 to support the upper shield 710.

Optionally, the mating surface 221 includes a top surface 221a and a peripheral surface 221b that are connected, where the contact area between the shielding member 700 and the cover ring 220 is larger, and the mating stability therebetween is better. When the cover ring 220 is provided with the mounting groove 223 as described above, the top surface 221a may be higher than the second support surface 223a of the mounting groove 223.

In an alternative embodiment, the inclined surface 310 is provided at the edge of the deposition plate 300, and the inclined surface 310 is inclined downward from the top surface of the deposition plate 300, where the top surface of the deposition plate 300 refers to the surface of the deposition plate 300 facing away from the bearing surface 211, in particular, in the case that the deposition plate 300 is supported on the base assembly 200. In this scheme, when the plasma bombards the deposition disc 300, atoms sputtered on the surface of the deposition disc 300 may scatter around, and the inclined surface 310 may expand the angle of diffuse scattering of atoms, so that the deposition range of the protective layer is wider.

Alternatively, the width of the inclined surface 310 may be 5-10 mm, which may be flexibly selected according to actual needs, which is not particularly limited in the embodiment of the present application. The inclined surface 310 may be provided at a partial region in the circumferential direction of the deposition plate, or may be an annular surface surrounding the axis of the deposition plate 300, thereby improving the diffusion effect of atoms.

Alternatively, the maximum height of the inclined surface 310 in the extending direction of the central axis of the cover ring 220 may be 3mm, which may be flexibly selected according to actual needs, and the embodiment of the present application is not limited thereto.

Optionally, in accordance with the semiconductor process chamber disclosed in the present application, when a deposition process is required to form a protective layer, the deposition plate 300 is supported on the susceptor assembly 200, the susceptor assembly 200 is raised to a process position to form a process space, and then Ar gas or N ₂ or other process gases are introduced into the process space, while the susceptor 210 and the rf coil 410 simultaneously load rf energy into the process space, so that the process gases are ionized and continuously bombard the deposition plate 300 under the effect of the rf of the susceptor 210, and source materials thereon are sputtered onto the dome 130 of the receiving space of the chamber body 100, the upper shield 710, the top surface 221a of the cover ring 220, and the inner wall of the mounting groove 223 to form a protective layer, which can cover possible sources of contaminant particles in the receiving space to reduce the generation of contaminant particles.

Optionally, in the semiconductor process chamber disclosed in the present application, when the first pre-cleaning process is performed, the ion filter 500 is placed on the cover ring 220, the susceptor 210 is lifted to a process position to form a process space, and then a process gas such as hydrogen (possibly He doped) is introduced into the process space, so that only the rf coil 410 can be loaded with rf energy, or the rf coil 410 and the susceptor 210 can simultaneously load rf energy into the process space, so that the hydrogen is ionized, and hydrogen ions and free radicals are generated, and these ions move downwards, wherein the hydrogen ions are electrically neutralized due to contacting the ion filter 500, stay on the ion filter 500, and the hydrogen radicals and a small amount of hydrogen ions (or only hydrogen free radicals) pass through the through holes 520 of the ion filter 500 to reach the surface of the wafer 800 and react with an oxide layer thereon, thereby playing a reducing effect to clean the surface of the wafer 800.

The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.

Claims

1. A semiconductor process chamber, characterized in that it comprises a chamber body (100), an ion filter (500) and a base assembly (200), wherein the base assembly (200) is arranged in a accommodating space of the chamber body (100) in a liftable manner, a deposition plate (300) and the ion filter (500) can be placed in the accommodating space, and the deposition plate (300) and the ion filter (500) can both be switched between a first position and a second position in the accommodating space,

When the deposition tray (300) is located at the first position, the deposition tray (300) is located above the base assembly (200), and the base assembly (200) can support the deposition tray (300) to perform a deposition process, so that plasma that can bombard the deposition tray (300) is generated in the accommodation space, so as to form a protective layer on the inner surface of the chamber body (100) and the surface of the base assembly (200);

When the deposition tray (300) is located at the second position, the deposition tray (300) is staggered with the base assembly (200), and the base assembly (200) can support a wafer (800) to perform a wafer processing process, wherein the wafer processing process includes a first pre-cleaning process and a second pre-cleaning process;

When the deposition plate (300) is located at the second position and the ion filter (500) is located at the first position, the base assembly (200) can support the ion filter (500) to perform the first pre-cleaning process on the wafer (800);

When the deposition plate (300) is located at the second position and the ion filter (500) is located at the second position, the base assembly (200) can support the wafer (800) to perform the second pre-cleaning process.

2. The semiconductor process chamber according to claim 1 is characterized in that the accommodating space includes a first accommodating cavity and a second accommodating cavity that are connected to each other, the chamber body (100) includes a main body (110) and a protruding portion (120) that are connected to each other, the protruding portion (120) is connected to the side wall of the main body (110), the main body (110) has the first accommodating cavity, the protruding portion (120) has the second accommodating cavity, the base assembly (200) can be raised and lowered in the first accommodating cavity, and at least one of the deposition plate (300) and the ion filter (500) can be located in the second accommodating cavity.

3. The semiconductor process chamber according to claim 2 is characterized in that the side wall of the second accommodating cavity is provided with at least one supporting portion (121), the supporting portion (121) is spaced apart from the bottom wall of the second accommodating cavity, and the supporting portion (121) is used to support the deposition plate (300) or the ion filter (500).

4. The semiconductor process chamber according to claim 3 is characterized in that the number of the support parts (121) is at least two, and the at least two support parts (121) include a first support part (121a) and a second support part (121b), one of the first support part (121a) and the second support part (121b) is used to support the deposition plate (300), and the other is used to support the ion filter (500), and the first support part (121a) and the second support part (121b) are located in the same second accommodating cavity, and the first support part (121a) and the second support part (121b) are arranged at intervals along the height direction of the second accommodating cavity.

5. The semiconductor process chamber according to claim 3 is characterized in that the number of the support parts (121) is at least two, and the at least two support parts (121) include a first support part (121a) and a second support part (121b), one of the first support part (121a) and the second support part (121b) is used to support the deposition plate (300), and the other is used to support the ion filter (500), and the number of the protrusions (120) is at least two, including a first protrusion and a second protrusion, the first support part (121a) is arranged in the second accommodating cavity of the first protrusion, and the second support part (121b) is arranged in the second accommodating cavity of the second protrusion.

6. The semiconductor process chamber according to claim 3 is characterized in that the semiconductor process chamber also includes a rotating member (600), at least a portion of the rotating member (600) is rotatably disposed in the chamber body (100), and the rotating member (600) can be raised and lowered relative to the first accommodating cavity, the deposition plate (300) or the ion filter (500) can be supported on the rotating member (600), and one end of the rotating member (600) can extend to the bottom of the support portion (121) to transport the deposition plate (300) or the ion filter (500) to the base assembly (200).

7. The semiconductor process chamber according to claim 2, characterized in that the protruding portion (120) and the main body (110) are an integrated structure.

8. The semiconductor process chamber according to claim 1, characterized in that the semiconductor process chamber further comprises a radio frequency component (400), the radio frequency component (400) comprises a radio frequency coil (410), and the radio frequency coil (410) is embedded in the chamber body (100),

When the semiconductor process chamber performs the first pre-cleaning process, the radio frequency coil (410) loads radio frequency energy into the accommodation space; when the semiconductor process chamber performs the second pre-cleaning process, the radio frequency coil (410) and the base assembly (200) both load radio frequency energy into the accommodation space.

9. The semiconductor process chamber according to claim 1 is characterized in that the base assembly (200) includes a base (210) and a cover ring (220), the base (210) has a carrying surface (211) for carrying the wafer (800), the cover ring (220) is arranged at the edge of the carrying surface (211), and a positioning groove (222) is provided on a side of the cover ring (220) facing away from the carrying surface (211), the bottom surface of the positioning groove (222) is a first supporting surface (222a), and at least a portion of the deposition plate (300) can be located in the positioning groove (222) so that the deposition plate (300) is supported on the first supporting surface (222a).

10. The semiconductor process chamber according to claim 9 is characterized in that the semiconductor process chamber further comprises an ion filter (500), the ion filter (500) can be switched between the first position and the second position, the cover ring (220) is further provided with a mounting groove (223) on a side facing away from the bearing surface (211), the bottom surface of the mounting groove (223) is a second supporting surface (223a), the second supporting surface (223a) is higher than the first supporting surface (222a), and at least a part of the ion filter (500) can be located in the mounting groove (223) so that the ion filter (500) is supported on the second supporting surface (223a).

11. The semiconductor process chamber according to claim 10, characterized in that one of the second supporting surface (223a) and the ion filter (500) is provided with a limiting groove (223a1), and the other is provided with a limiting protrusion (510), and the limiting protrusion (510) is limitedly matched with the limiting groove (223a1).

12. The semiconductor process chamber according to claim 1, characterized in that the semiconductor process chamber further comprises a shielding member (700), wherein the shielding member (700) is disposed in the accommodating space, the base assembly (200) comprises a base (210) and a cover ring (220), the base (210) having a bearing surface (211) for bearing the wafer (800), the cover ring (220) being disposed at an edge of the bearing surface (211), and the cover ring (220) having a mating surface (221),

When the deposition process or the wafer processing process is performed in the semiconductor process chamber, the matching surface (221) and the shielding component (700) are clearance matched.

13. The semiconductor process chamber according to claim 1, characterized in that an inclined surface (310) is provided at the edge of the deposition plate (300), and the inclined surface (310) is inclined downward from the top surface of the deposition plate (300).