CN118112398B - A contactless detection device and method for electromagnetic field driven wafer-level LED chips - Google Patents
A contactless detection device and method for electromagnetic field driven wafer-level LED chipsInfo
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- CN118112398B CN118112398B CN202410238843.9A CN202410238843A CN118112398B CN 118112398 B CN118112398 B CN 118112398B CN 202410238843 A CN202410238843 A CN 202410238843A CN 118112398 B CN118112398 B CN 118112398B
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Abstract
The invention discloses a non-contact detection device and a non-contact detection method for driving a wafer-level LED chip by an electromagnetic field, wherein the non-contact detection device comprises a detection substrate, a probe substrate is arranged above the detection substrate, a magnetic probe array is arranged on the probe substrate, the magnetic probe array comprises a plurality of magnetic probes, the magnetic probes are respectively and electrically connected with a row electrode and a column electrode, the row electrode is connected with a row signal controller, the column electrode is connected with a column signal controller, the row signal controller and the column signal controller are both connected to a power supply module, the magnetic probes are electrified to generate a high-frequency alternating magnetic field so that carriers in the wafer-level LED chip to be detected form directional transportation and radiation recombination to generate electroluminescence, and the non-contact detection device further comprises an optical signal detection module, wherein the optical signal detection module is used for detecting luminous information of the wafer-level LED chip to be detected. The invention improves the detection speed and the detection accuracy of the LED chip and avoids the detection damage of the LED chip.
Description
Technical Field
The invention relates to the field of LED chip detection, in particular to a non-contact detection device and method for driving a wafer-level LED chip by an electromagnetic field.
Background
With the increasing development of display technology, micro LEDs are one of the important branches of LED technology, and are generally an LED array with high density and micro size integrated on a chip, for example, each pixel of an LED display screen is addressable and is driven to light individually, which can be regarded as a miniature version of an outdoor LED display screen, and the distance between pixels is reduced from millimeter level to micrometer level and nanometer level. The number of LED chips on one display screen is increased by one order of magnitude, and the improvement increases great difficulty in the aspects of accuracy and speed of the micro LED chips in the transfer process, so that the requirements of manufacturers on the quality and efficiency of product detection in actual production are inevitably increased.
Traditional LED detection methods detect by contacting micro LED chips, which can cause damage to the micro LED chips to some extent. Meanwhile, the speed requirement of large-area micro LED chip detection cannot be met.
Disclosure of Invention
The research of the applicant shows that a probe array (i.e. a plurality of probes) can be adopted to detect a plurality of wafer-level LED chips to be detected at the same time, so that the detection efficiency is improved. However, if the distance between the wafer-level LED chips to be detected is too short, the wafer-level LED chips can emit light at the same time during detection, so that mutual interference is caused, and the accuracy of the light signal detection module for collecting the light-emitting information is affected.
In view of the above-mentioned drawbacks of the prior art, the present invention provides a device and a method for non-contact detection of an electromagnetic field driving wafer-level LED chip, which aims to detect the wafer-level LED chip without contact, avoid damage, and improve detection efficiency.
To achieve the above object, a first aspect of the present invention discloses a non-contact inspection device for driving wafer-level LED chips by an electromagnetic field, the non-contact inspection device comprising an inspection substrate for placing the wafer-level LED chips to be inspected; the non-contact detection device comprises a detection substrate, a non-contact detection device and an optical signal detection module, wherein a probe substrate is arranged above the detection substrate, a magnetic probe array is arranged on the probe substrate, the magnetic probe array comprises a plurality of magnetic probes, the magnetic probes are respectively and electrically connected with a row electrode and a column electrode, the row electrode is connected with a row signal controller, the column electrode is connected with a column signal controller, the row signal controller and the column signal controller are both connected to a power supply module, the row signal controller and the column signal controller are used for controlling the magnetic probes to be electrified to generate a high-frequency alternating magnetic field, the high-frequency alternating magnetic field is used for enabling carriers inside the wafer-level LED chip to be detected to form directional transportation and radiation recombination to generate electroluminescence, and the non-contact detection device further comprises the optical signal detection module is used for detecting luminous information of the wafer-level LED chip to be detected, and an included angle exists between PN junction orientation of the wafer-level LED chip to be detected and the magnetic field direction of the high-frequency alternating magnetic field;
The non-contact detection device is configured to respond to the fact that the adjacent magnetic probes start to detect the wafer-level LED chips to be detected respectively, and control the corresponding row signal controllers and the corresponding column signal controllers to be electrified to enable the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes to be staggered, so that the wafer-level LED chips to be detected corresponding to the adjacent magnetic probes emit light in different time periods.
Optionally, the detection substrate is covered with a conductive layer, the conductive layer is grounded, and the conductive layer is used for placing the wafer-level LED chip to be detected.
Optionally, the vertical distance between the probe substrate and the wafer-level LED chip to be detected is in the range of 100nm to 1 cm.
Optionally, the non-contact detection device further comprises the electric signal detection module, wherein the electric signal detection module is used for acquiring electric signal information output by the power supply module, judging whether an electric signal actually output by the power supply module is matched with an electric signal required by the magnetic probe or not according to the electric signal information, if so, working normally, and if not, giving an alarm.
Optionally, the PN junction direction of the wafer-level LED chip to be detected is perpendicular to the magnetic field direction of the high-frequency alternating magnetic field.
Optionally, the high-frequency alternating magnetic field is a magnetic field with preset amplitude variation at preset frequency, and the magnetic field comprises a sine wave, a square wave, a sawtooth wave and a combined wave, wherein the combined wave at least comprises two of the sine wave, the square wave and the sawtooth wave.
Optionally, the optical signal detection module is disposed above the probe substrate and/or below the detection substrate.
Optionally, the magnetic probe covers at least one wafer-level LED chip to be detected, and detects the correspondingly covered wafer-level LED chip to be detected.
Optionally, the light transmittance of the probe substrate and the detection substrate in the light-emitting wavelength range of the wafer-level LED chip to be detected is greater than 30%.
The second aspect of the invention discloses a non-contact detection method of an electromagnetic field driving wafer-level LED chip, which is applicable to the non-contact detection device of the electromagnetic field driving wafer-level LED chip, and comprises the following steps:
step S101, placing a wafer-level LED chip to be detected on the detection substrate to obtain the position of the wafer-level LED chip to be detected;
step S102, according to the position of the wafer-level LED chip to be detected, obtaining the magnetic probe corresponding to the position;
Step S103, judging whether the corresponding magnetic probes are multiple and adjacent, if so, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to input electric signals so as to stagger the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes, and if not, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to normally input electric signals;
Step S104, controlling the optical signal detection module to collect the light-emitting information of the wafer-level LED chips to be detected, judging whether the light-emitting information meets the qualification standard of the wafer-level LED chips to be detected, if so, judging that the wafer-level LED chips to be detected are qualified, and if not, judging that the wafer-level LED chips to be detected are unqualified.
The invention has the beneficial effects that 1, a probe substrate is arranged above the detection substrate, a magnetic probe array is arranged on the probe substrate, the magnetic probe array comprises a plurality of magnetic probes, the magnetic probes are respectively and electrically connected with a row electrode and a column electrode, the row electrode is connected with a row signal controller, the column electrode is connected with a column signal controller, the row signal controller and the column signal controller are both connected to a power supply module, the row signal controller and the column signal controller are used for controlling the magnetic probes to be electrified to generate a high-frequency alternating magnetic field, and the high-frequency alternating magnetic field is used for leading carriers in the wafer-level LED chip to be detected to form directional transportation and radiation recombination to generate electroluminescence. According to the invention, the carrier in the wafer-level LED chip to be detected forms directional transportation and radiation recombination to generate electroluminescence through the high-frequency alternating magnetic field, so that the non-contact detection of the wafer-level LED chip to be detected can be realized, the physical damage caused by contact detection can be effectively avoided, and the quality of the wafer-level LED chip to be detected is improved. 2. The invention adopts the magnetic probe array, the magnetic probe array comprises a plurality of magnetic probes, and the magnetic probes can jointly detect. The invention can improve the detection efficiency without connecting the wafer-level LED chip to be detected into the detection circuit for detection. And at the moment, a plurality of probes are adopted to detect a plurality of wafer-level LED chips to be detected at the same time, so that the detection efficiency is further improved. 3. The non-contact detection device is configured to respond to the fact that the adjacent magnetic probes respectively start to detect the corresponding wafer-level LED chips to be detected, and control the corresponding row signal controllers and the corresponding column signal controllers to be electrified to enable the time of high-frequency alternating magnetic fields generated by the adjacent magnetic probes to be staggered, so that the wafer-level LED chips to be detected corresponding to the adjacent magnetic probes emit light in different time periods. According to the invention, through the control mode, the adjacent wafer-level LED chips to be detected emit light in different time periods, so that the problem of mutual interference caused by simultaneous light emission of the adjacent wafer-level LED chips to be detected is effectively avoided, the detection of the optical signal detection module is more accurate, and the detection accuracy of the wafer-level LED chips to be detected is effectively improved.
In conclusion, the invention avoids the problem of low efficiency in the traditional LED chip detection process, reduces the damage of the probe to the LED chip, and improves the detection speed and the detection accuracy of the LED chip.
Drawings
FIG. 1 is a schematic diagram of a non-contact detection device for driving a wafer level LED chip by an electromagnetic field according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing luminescence of a wafer level LED chip to be inspected when an adjacent magnetic probe is inspected according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a detection substrate of a non-contact detection device for driving wafer-level LED chips by electromagnetic field according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a probe substrate of a non-contact detection device for driving wafer-level LED chips by electromagnetic field according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a magnetic probe of a non-contact detection device for driving wafer-level LED chips by an electromagnetic field according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a non-contact detection device with a conductive layer on the lower surface of a detection substrate for driving a wafer level LED chip according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a non-contact detection device with a lower electromagnetic field driving wafer-level LED chip for an optical information number detection module according to an embodiment of the present invention;
Fig. 8 is a flow chart of a method for non-contact detection of electromagnetic field driven wafer level LED chips according to an embodiment of the present invention.
Detailed Description
The invention discloses a non-contact detection device and a non-contact detection method for an electromagnetic field driving wafer-level LED chip, and a person skilled in the art can refer to the content of the specification to properly improve the technical details. It is expressly noted that all such similar substitutions and modifications will be apparent to those skilled in the art, and are deemed to be included in the present invention. While the methods and applications of this invention have been described in terms of preferred embodiments, it will be apparent to those skilled in the relevant art that variations and modifications can be made in the methods and applications described herein, and in the practice and application of the techniques of this invention, without departing from the spirit or scope of the invention.
The research of the applicant shows that a probe array (i.e. a plurality of probes) can be adopted to detect a plurality of wafer-level LED chips to be detected at the same time, so that the detection efficiency is improved. However, if the distance between the wafer-level LED chips to be detected is too short, the wafer-level LED chips can emit light at the same time during detection, so that mutual interference is caused, and the accuracy of the light signal detection module for collecting the light-emitting information is affected.
The embodiment of the invention provides a non-contact detection device for driving wafer-level LED chips by an electromagnetic field, which comprises a detection substrate 1, a probe substrate 2, a magnetic probe 3 array, an optical signal detection module 6, a light signal detection module 6 and a power supply module 5, wherein the detection substrate 1 is used for placing the wafer-level LED chips 4 to be detected, the probe substrate 2 is arranged above the detection substrate 1, the probe substrate 2 is provided with the magnetic probe 3 array, the magnetic probe 3 array is respectively and electrically connected with a row electrode 9 and a column electrode 10, the row electrode 9 is connected with a row signal controller 11, the column electrode 10 is connected with a column signal controller 12, the row signal controller 11 and the column signal controller 12 are both connected with a power supply module 5, and the row signal controller 11 and the column signal controller 12 are used for controlling the magnetic probe 3 to be electrified to generate a high-frequency alternating magnetic field which is used for enabling carriers inside the wafer-level LED chips 4 to be detected to form directional transportation and radiation recombination to generate electroluminescence;
The non-contact detection device is configured to control the corresponding row signal controller 11 and the corresponding column signal controller 12 to be electrified to enable the time of the high-frequency alternating magnetic field generated by the adjacent magnetic probes 3 to be staggered in response to the fact that the adjacent magnetic probes 3 start to detect the corresponding wafer-level LED chips 4 to be detected respectively, and further enable the wafer-level LED chips 4 to be detected corresponding to the adjacent magnetic probes 3 to emit light in different time periods.
The PN junction is a core part of an LED, and is a space charge region formed by a P-type semiconductor and an N-type semiconductor on one semiconductor by diffusion. There is a transition layer between the P-type semiconductor and the N-type semiconductor, called a PN junction. In PN junctions of some semiconductor materials, injected minority carriers combine with majority carriers to release excess energy in the form of light, thereby converting electrical energy directly into optical energy. When a reverse voltage is applied to the PN junction, minority carriers are difficult to inject, and therefore do not emit light. Such diodes fabricated using the injection electroluminescent principle are known as LEDs. The luminous principle of the LED is that when forward current is introduced to two ends of the LED, electrons flow from an N region to a P region, and light energy is emitted after the electrons are combined with holes. When a reverse voltage is applied across the LED, minority carriers are difficult to inject and therefore do not emit light. The light emission information includes brightness, luminous flux, and the like.
It should be noted that, in the embodiment of the invention, the magnetic probe 3 generates a high-frequency alternating magnetic field, and carriers in the wafer-level LED chip 4 to be detected form directional transportation and radiation recombination to generate electroluminescence through the high-frequency alternating magnetic field, so that non-contact detection is realized, and physical damage possibly caused by contact detection is avoided. Meanwhile, the detection wafer-level LED chip is not required to be connected into the detection circuit, so that the detection efficiency is improved. Finally, when the adjacent magnetic probes 3 detect simultaneously, the contactless detection device is configured to stagger the time periods of the high-frequency alternating magnetic field generated by the adjacent magnetic probes 3 by the input electric signals, so that the corresponding wafer-level LED chips 4 to be detected emit light in different time periods, and the problem that the detection result is inaccurate due to the fact that the adjacent wafer-level LED chips 4 to be detected emit light at the same time and interfere with each other can be effectively avoided.
It should be noted that the high-frequency alternating magnetic field can generate eddy current effect, and electron holes at two ends of the PN junction can move symmetrically, and only current movement with the same polarity as the PN junction can make hole electrons recombine and light the LED.
When one magnetic probe 3 corresponds to one wafer level LED chip 4 to be detected in the embodiment of the present invention, the light-emitting schematic diagram of each wafer level LED chip 4 to be detected is shown in fig. 2, wherein black is non-light-emitting, white is light-emitting, and adjacent wafer level LED chips 4 to be detected do not emit light at the same time. Fig. 2 is a schematic diagram of detecting corresponding luminescence by the wafer-level LED chip 4 to be detected at a certain moment, and when the magnetic probe 3 corresponding to the wafer-level LED chip 4 to be detected which emits light at the moment is powered on by an electric signal to generate a high-frequency alternating magnetic field, the magnetic probe 3 corresponding to the wafer-level LED chip 4 to be detected which does not emit light is not powered on by the electric signal to not generate the high-frequency alternating magnetic field.
In a specific embodiment, as shown in fig. 1, the detection substrate 1 is covered with a conductive layer 7, where the conductive layer 7 is grounded, and the conductive layer 7 is used for placing the wafer level LED chip 4 to be detected.
In another embodiment, as shown in fig. 6, the detection substrate 1 is covered with a conductive layer 7, and the conductive layer 7 is grounded.
In a specific embodiment, as shown in fig. 1, the contactless detection device further includes an electrical signal detection module 8, where the electrical signal detection module 8 is configured to obtain electrical signal information output by the power supply module 5, determine, according to the electrical signal information, whether an electrical signal actually output by the power supply module 5 matches an electrical signal required by the magnetic probe 3, if yes, normal operation is performed, and if not, an alarm is sent.
When the power supply module 5 fails, the actual output voltage and the required voltage are not matched, and an error may occur in the detection. Therefore, the embodiment of the invention can timely find the fault of the power supply module 5 by adopting the electric signal detection module 8.
In a specific embodiment, the PN junction direction of the wafer-level LED chip 4 to be tested and the magnetic field direction of the high-frequency alternating magnetic field are perpendicular to each other.
It should be noted that, when the direction of the PN junction of the wafer-level LED chip 4 to be detected and the magnetic field direction of the high-frequency alternating magnetic field are perpendicular to each other, the carrier transporting direction in the wafer-level LED chip 4 to be detected can just be directed forward along the PN junction.
In a specific embodiment, the high-frequency alternating magnetic field is a magnetic field with preset amplitude variation at a preset frequency, and the magnetic field comprises a sine wave, a square wave, a sawtooth wave and a combined wave, wherein the combined wave at least comprises two of the sine wave, the square wave and the sawtooth wave.
Further, the frequency range of the high-frequency alternating magnetic field is 10Hz-50MHz, and the magnetic field strength range is not more than +/-5T.
In a specific embodiment, the optical signal detection module 6 is disposed above the probe substrate 2 and/or below the detection substrate 1.
As shown in fig. 1 and 6, the optical signal detection module 6 is disposed above the probe substrate 2.
As shown in fig. 7, the optical signal detection module 6 is disposed below the detection substrate 1.
In a specific embodiment, the magnetic probe 3 covers at least one wafer-level LED chip 4 to be inspected, and inspects the corresponding covered wafer-level LED chip 4 to be inspected.
In a specific embodiment, the transmittance of light of the probe substrate 2 and the detection substrate 1 in the light emitting wavelength range of the wafer level LED chip 4 to be detected is greater than 30%.
When the conductive layer 7 is present, the transmittance of the conductive layer 7 in the light emitting wavelength range of the wafer level LED chip 4 to be tested is also greater than 30%. Generally, the optical signal detection module 6 is positioned on the side, so that the requirement on the component light transmittance of the side is met, and the situation that the acquisition of signals by the optical signal detection module 6 is failed due to excessive shielding can be reduced.
In a specific embodiment, the vertical distance between the probe substrate 2 and the wafer level LED chip 4 to be inspected is in the range of 100nm to 1 cm.
In a specific embodiment, the light transmittance of the contactless detection device in the light-emitting wavelength range of the wafer-level LED chip 4 to be detected is 80%.
In a specific embodiment, the vertical distance between the magnetic probe 3 and the wafer level LED chip 4 to be tested is 1.2 μm.
In one embodiment, the magnetic probe 3 may be individually corresponding to one point of the wafer-level LED chip, or may be in one-to-one correspondence with the entire wafer-level LED chip,
In a specific embodiment, the electrical signal detection module 8 may include, but is not limited to, a signal amplifier, a current analyzer, and a voltage analyzer, and the electrical signal analysis may assist in determining the performance of the wafer-level LED chip 4 to be detected.
In a specific embodiment, the optical signal detection module 6 may include, but is not limited to, a brightness detector, a spectrum analyzer, and an optical lens group.
The upper part of the detection substrate 1 of the embodiment of the invention is provided with a probe substrate 2, the probe substrate 2 is provided with a magnetic probe 3 array, the magnetic probe 3 array comprises a plurality of magnetic probes 3, the magnetic probes 3 are respectively and electrically connected with a row electrode 9 and a column electrode 10, the row electrode 9 is connected with a row signal controller 11, the column electrode 10 is connected with a column signal controller 12, the row signal controller 11 and the column signal controller 12 are both connected to a power supply module 5, the row signal controller 11 and the column signal controller 12 are used for controlling the magnetic probes 3 to be electrified to generate a high-frequency alternating magnetic field, and the high-frequency alternating magnetic field is used for leading carriers in the wafer-level LED chip 4 to be detected to form directional transportation and radiation recombination to generate electroluminescence. According to the embodiment of the invention, the carrier in the wafer-level LED chip 4 to be detected forms directional transportation and radiation recombination to generate electroluminescence through the high-frequency alternating magnetic field, so that the non-contact detection of the wafer-level LED chip 4 to be detected can be realized, the physical damage caused by contact detection can be effectively avoided, and the quality of the wafer-level LED chip 4 to be detected is improved.
The embodiment of the invention adopts the magnetic probe 3 array, the magnetic probe 3 array comprises a plurality of magnetic probes 3, and the magnetic probes 3 can jointly detect. The embodiment of the invention can improve the detection efficiency without connecting the wafer-level LED chip 4 to be detected into a detection circuit for detection. And at the moment, a plurality of probes are adopted to detect a plurality of wafer-level LED chips 4 to be detected at the same time, so that the detection efficiency is further improved.
The non-contact detection device is configured to respond to the fact that the adjacent magnetic probes 3 start to detect the corresponding wafer-level LED chips 4 to be detected respectively, control the corresponding row signal controllers 11 and the corresponding column signal controllers 12 to be electrified to enable the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes 3 to be staggered, and further enable the wafer-level LED chips 4 to be detected corresponding to the adjacent magnetic probes 3 to emit light in different time periods. According to the embodiment of the invention, through the control mode, the adjacent wafer-level LED chips 4 to be detected emit light in different time periods, so that the problem of mutual interference caused by simultaneous light emission of the adjacent wafer-level LED chips 4 to be detected is effectively avoided, the detection of the optical signal detection module 6 is more accurate, and the detection accuracy of the wafer-level LED chips 4 to be detected is effectively improved.
In summary, the embodiment of the invention avoids the problem of low efficiency in the traditional LED chip detection process, reduces the damage of the probe to the LED chip, and improves the detection speed and the detection accuracy of the LED chip.
Based on the above provided non-contact detection device for driving the wafer-level LED chip by the electromagnetic field, the embodiment of the present invention further provides a non-contact detection method for driving the wafer-level LED chip by the electromagnetic field, which is applicable to the device of the above embodiment, as shown in fig. 8, and the method includes:
step S101, placing a wafer-level LED chip to be detected on a detection substrate to obtain the position of the wafer-level LED chip to be detected;
step S102, according to the position of the wafer-level LED chip to be detected, obtaining a magnetic probe corresponding to the position;
step S103, judging whether the corresponding magnetic probes are multiple and adjacent, if so, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to input electric signals so as to stagger the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes, otherwise, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to normally input the electric signals;
And step S104, controlling the optical signal detection module to acquire the light-emitting information of the wafer-level LED chips to be detected, judging whether the light-emitting information meets the qualification standard of the wafer-level LED chips to be detected, if so, judging that the wafer-level LED chips to be detected are qualified, and if not, judging that the wafer-level LED chips to be detected are unqualified.
In one embodiment, the row electrodes of the probe substrate are disposed on the upper surface of the magnetic probe and the column electrodes are disposed on the lower surface of the magnetic probe, with the row electrodes and the column electrodes not contacting.
In a specific embodiment, when a certain point is detected, the signal controller finds the row and column electrodes of the magnetic probe corresponding to the point, signals are applied to the row electrodes connected with the magnetic probe, signals are not applied to the other row electrodes, no signals are generated to the column electrodes connected with the magnetic probe, and the other column electrodes in the same row absorb the signals through the signal controller and are grounded. The signal controller includes a row signal controller and a column signal controller.
The embodiment of the invention avoids the problem of low efficiency in the traditional LED chip detection process, reduces the damage of the probe to the LED chip, and improves the detection speed and the detection accuracy of the LED chip.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
In this specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for system embodiments, since they are substantially similar to method embodiments, the description is relatively simple, as relevant to see a section of the description of method embodiments.
The foregoing is merely illustrative of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (10)
1. The non-contact detection device for driving the wafer-level LED chips by the electromagnetic field is characterized by comprising a detection substrate for placing the wafer-level LED chips to be detected; the non-contact detection device comprises a detection substrate, a non-contact detection device and an optical signal detection module, wherein a probe substrate is arranged above the detection substrate, a magnetic probe array is arranged on the probe substrate, the magnetic probe array comprises a plurality of magnetic probes, the magnetic probes are respectively and electrically connected with a row electrode and a column electrode, the row electrode is connected with a row signal controller, the column electrode is connected with a column signal controller, the row signal controller and the column signal controller are both connected to a power supply module, the row signal controller and the column signal controller are used for controlling the magnetic probes to be electrified to generate a high-frequency alternating magnetic field, the high-frequency alternating magnetic field is used for enabling carriers inside the wafer-level LED chip to be detected to form directional transportation and radiation recombination to generate electroluminescence, and the non-contact detection device further comprises the optical signal detection module is used for detecting luminous information of the wafer-level LED chip to be detected, and an included angle exists between PN junction orientation of the wafer-level LED chip to be detected and the magnetic field direction of the high-frequency alternating magnetic field;
The non-contact detection device is configured to respond to the fact that the adjacent magnetic probes start to detect the wafer-level LED chips to be detected respectively, and control the corresponding row signal controllers and the corresponding column signal controllers to be electrified to enable the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes to be staggered, so that the wafer-level LED chips to be detected corresponding to the adjacent magnetic probes emit light in different time periods.
2. The electromagnetic field driven wafer level LED chip noncontact inspection device of claim 1 wherein the inspection substrate is covered with a conductive layer, the conductive layer being grounded, the conductive layer being for placement of the wafer level LED chip to be inspected.
3. The electromagnetic field driven wafer level LED chip noncontact inspection device of claim 1 wherein the vertical distance between the probe substrate and the wafer level LED chip to be inspected is in the range of 100nm to 1 cm.
4. The device for detecting the non-contact of the electromagnetic field driven wafer-level LED chip according to claim 1 is characterized by further comprising an electric signal detection module, wherein the electric signal detection module is used for acquiring electric signal information output by the power supply module and judging whether an electric signal actually output by the power supply module is matched with an electric signal required by the magnetic probe or not according to the electric signal information, if so, the device works normally, and if not, an alarm is given.
5. The electromagnetic field driven wafer level LED chip noncontact detection device according to claim 1, wherein the PN junction of the wafer level LED chip to be detected is directed perpendicular to the magnetic field direction of the high frequency alternating magnetic field.
6. The device for non-contact detection of an electromagnetic field driven wafer level LED chip of claim 1, wherein said high frequency alternating magnetic field is a magnetic field varying in preset amplitude at a preset frequency, comprising a sine wave, a square wave, a sawtooth wave, and a combination wave, wherein said combination wave comprises at least two of a sine wave, a square wave, a sawtooth wave.
7. The electromagnetic field driven wafer level LED chip noncontact detection device of claim 1, wherein the optical signal detection module is disposed above the probe substrate and/or below the detection substrate.
8. The electromagnetic field driven wafer level LED chip noncontact inspection device of claim 1 wherein the magnetic probe covers at least one of the wafer level LED chips to be inspected and inspects the corresponding covered wafer level LED chip to be inspected.
9. The electromagnetic field driven wafer level LED chip noncontact inspection device of claim 1 wherein the probe substrate and inspection substrate have a light transmittance of greater than 30% over the wavelength range of light emitted by the wafer level LED chip to be inspected.
10. A method of non-contact inspection of electromagnetic field driven wafer level LED chips, characterized by being applied to the non-contact inspection apparatus of electromagnetic field driven wafer level LED chips of claims 1 to 9, the method comprising:
step S101, placing a wafer-level LED chip to be detected on the detection substrate to obtain the position of the wafer-level LED chip to be detected;
step S102, according to the position of the wafer-level LED chip to be detected, obtaining the magnetic probe corresponding to the position;
Step S103, judging whether the corresponding magnetic probes are multiple and adjacent, if so, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to input electric signals so as to stagger the time of the high-frequency alternating magnetic fields generated by the adjacent magnetic probes, and if not, controlling the row signal controllers and the column signal controllers corresponding to the magnetic probes to normally input electric signals;
Step S104, controlling the optical signal detection module to collect the light-emitting information of the wafer-level LED chips to be detected, judging whether the light-emitting information meets the qualification standard of the wafer-level LED chips to be detected, if so, judging that the wafer-level LED chips to be detected are qualified, and if not, judging that the wafer-level LED chips to be detected are unqualified.
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| CN112858864A (en) * | 2021-01-18 | 2021-05-28 | 厦门大学 | Device and method for carrying out non-contact photoelectric detection on LED chip |
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