CN118137650B - Positive and negative symmetrical dual-power switch control circuit of amplifier - Google Patents
Positive and negative symmetrical dual-power switch control circuit of amplifier Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
- H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
- H02M1/009—Converters characterised by their input or output configuration having two or more independently controlled outputs
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Abstract
本申请属于放大器正负对称双电源开关控制设计技术领域，具体涉及一种放大器正负对称双电源开关控制电路，其设计采用MOS管作为核心控制元件，对N型MOS管、P型MOS管进行组合设计，以微控制器MCU的低电平、高电平为触发信号，控制放大器正负对称双电源的同时开关，响应速度快，具有纳秒级的快速开关切换能力，且MOS管具有软启动功能，没有机械磨损，有助于防止在启动时因瞬间大电流损坏器件，具有较高的可靠性及其较长的使用寿命，可降低维护成本，并具有较小的体积质量，易于进行微型化设计，此外，MOS管导通电阻低，对电路的功耗低，传输相同功率的情况下，能量损失少，可提高电路的整体能效。
The present application belongs to the technical field of amplifier positive and negative symmetrical dual power switch control design, and specifically relates to an amplifier positive and negative symmetrical dual power switch control circuit, which adopts MOS tube as the core control element, combines N-type MOS tube and P-type MOS tube for design, uses low level and high level of microcontroller MCU as trigger signals, controls the simultaneous switching of positive and negative symmetrical dual power supplies of the amplifier, has fast response speed, has nanosecond level fast switching capability, and the MOS tube has a soft start function, has no mechanical wear, helps to prevent damage to the device due to instantaneous large current at startup, has high reliability and long service life, can reduce maintenance cost, has small volume and mass, and is easy to miniaturize. In addition, the MOS tube has low on-resistance, low power consumption of the circuit, and less energy loss when transmitting the same power, which can improve the overall energy efficiency of the circuit.
Description
技术领域Technical Field
本申请属于放大器正负对称双电源开关控制设计技术领域，具体涉及一种放大器正负对称双电源开关控制电路。The present application belongs to the technical field of positive and negative symmetrical dual power switch control design for amplifiers, and in particular relates to a positive and negative symmetrical dual power switch control circuit for an amplifier.
背景技术Background technique
使用正负对称双电源对放大器进行供电，可在放大直流信号，输入的信号幅度较小时，确保放大器能够正常工作。Using a positive and negative symmetrical dual power supply to power the amplifier can ensure that the amplifier can work normally when amplifying DC signals and the input signal amplitude is small.
当前，对于放大器正负对称双电源的开关控制，多是采用机械继电器或固态继电器，响应速度慢，维护成本高，寿命有限，且质量体积较大，难以进行微型化设计。Currently, mechanical relays or solid-state relays are mostly used for switching control of the positive and negative symmetrical dual power supplies of amplifiers. They have slow response speeds, high maintenance costs, limited lifespans, and large mass and volume, making them difficult to miniaturize.
鉴于上述技术缺陷的存在提出本申请。This application is proposed in view of the above-mentioned technical defects.
发明内容Summary of the invention
本申请的目的是提供一种放大器正负对称双电源开关控制电路，以克服或减轻已知存在的至少一方面的技术缺陷。The purpose of the present application is to provide an amplifier positive and negative symmetrical dual power switch control circuit to overcome or alleviate at least one aspect of the known technical defects.
本申请的技术方案是：The technical solution of this application is:
一种放大器正负对称双电源开关控制电路，包括：An amplifier positive and negative symmetrical dual power switch control circuit, comprising:
微控制器MCU；Microcontroller MCU;
N型开关控制MOS管Q1，栅极连接微控制器MCU，源极接地；The N-type switch controls the MOS tube Q1, the gate of which is connected to the microcontroller MCU and the source of which is grounded;
第一电阻R1，连接N型开关控制MOS管Q1漏极；A first resistor R1 is connected to the drain of the N-type switch control MOS tube Q1;
第二电阻R2，连接第一电阻R1，以及连接正电源；A second resistor R2 is connected to the first resistor R1 and to a positive power supply;
P型正电源控制MOS管Q2，栅极连接在第一电阻R1、第二电阻R2之间的电路上，源极连接正电源，漏极连接放大器；A P-type positive power supply control MOS tube Q2, the gate of which is connected to the circuit between the first resistor R1 and the second resistor R2, the source of which is connected to the positive power supply, and the drain of which is connected to the amplifier;
P型中间控制MOS管Q3，栅极连接在第一电阻R1、第二电阻R2之间的电路上，源极连接正电源；A P-type intermediate control MOS tube Q3, the gate of which is connected to the circuit between the first resistor R1 and the second resistor R2, and the source of which is connected to the positive power supply;
第三电阻R3，连接P型中间控制MOS管Q3漏极；The third resistor R3 is connected to the drain of the P-type intermediate control MOS tube Q3;
第四电阻R4，连接第三电阻R3；A fourth resistor R4 connected to the third resistor R3;
N型负电源控制MOS管Q4，栅极连接在第三电阻R3、第四电阻R4之间的电路上，源极连接负电源、第四电阻R4，漏极连接放大器。The N-type negative power control MOS tube Q4 has a gate connected to the circuit between the third resistor R3 and the fourth resistor R4, a source connected to the negative power supply and the fourth resistor R4, and a drain connected to the amplifier.
可选的，上述的放大器正负对称双电源开关控制电路中，还包括：Optionally, the above amplifier positive and negative symmetrical dual power switch control circuit further includes:
第五电阻R5，设置在微控制器MCU、N型开关控制MOS管Q1栅极之间的电路上。The fifth resistor R5 is arranged in a circuit between the microcontroller MCU and the gate of the N-type switch control MOS tube Q1.
可选的，上述的放大器正负对称双电源开关控制电路中，还包括：Optionally, the above amplifier positive and negative symmetrical dual power switch control circuit further includes:
第六电阻R6，连接在第五电阻R5、N型开关控制MOS管Q1栅极之间的电路上，接地。The sixth resistor R6 is connected to the circuit between the fifth resistor R5 and the gate of the N-type switch control MOS tube Q1 and is grounded.
可选的，上述的放大器正负对称双电源开关控制电路中，两个第一电容C1，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地；Optionally, in the above amplifier positive and negative symmetrical dual power switch control circuit, two first capacitors C1 are connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, and are grounded;
两个第二电容C2，连接在N型负电源控制MOS管Q4漏极、放大器之间的电路上，接地。The two second capacitors C2 are connected to the circuit between the drain of the N-type negative power control MOS tube Q4 and the amplifier, and are grounded.
可选的，上述的放大器正负对称双电源开关控制电路中，还包括：Optionally, the above amplifier positive and negative symmetrical dual power switch control circuit further includes:
第三电容C3，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地，相较于两个第一电容C1，靠近放大器；The third capacitor C3 is connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, is grounded, and is closer to the amplifier than the two first capacitors C1;
第四电容C4，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地，相较于两个第二电容C2，靠近放大器。The fourth capacitor C4 is connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, is grounded, and is closer to the amplifier than the two second capacitors C2.
本申请至少存在以下有益技术效果：This application has at least the following beneficial technical effects:
提供一种放大器正负对称双电源开关控制电路，领域内技术人员可以理解的是，其设计采用MOS管作为核心控制元件，对N型MOS管、P型MOS管进行组合设计，以微控制器MCU的低电平、高电平为触发信号，控制放大器正负对称双电源的同时开关，响应速度快，具有纳秒级的快速开关切换能力，且MOS管具有软启动功能，没有机械磨损，有助于防止在启动时因瞬间大电流损坏器件，具有较高的可靠性及其较长的使用寿命，可降低维护成本，并具有较小的体积质量，易于进行微型化设计，此外，MOS管导通电阻低，对电路的功耗低，传输相同功率的情况下，能量损失少，可提高电路的整体能效。Provided is an amplifier positive and negative symmetrical dual power switch control circuit. It can be understood by technicians in the field that the design adopts MOS tubes as core control elements, combines N-type MOS tubes and P-type MOS tubes, uses low level and high level of a microcontroller MCU as trigger signals, controls the simultaneous switching of the amplifier's positive and negative symmetrical dual power supplies, has fast response speed, has nanosecond-level fast switching capability, and the MOS tube has a soft start function without mechanical wear, which helps prevent damage to the device due to instantaneous large current at startup, has high reliability and long service life, can reduce maintenance costs, has a small volume and mass, and is easy to design for miniaturization. In addition, the MOS tube has low on-resistance, low power consumption for the circuit, and less energy loss when transmitting the same power, which can improve the overall energy efficiency of the circuit.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是本申请实施例提供的放大器正负对称双电源开关控制电路的示意图；FIG1 is a schematic diagram of an amplifier positive and negative symmetrical dual power switch control circuit provided in an embodiment of the present application;
其中，G表示MOS管的栅极，S表示MOS管的源极，D表示MOS管的漏极。Among them, G represents the gate of the MOS tube, S represents the source of the MOS tube, and D represents the drain of the MOS tube.
为了更好说明本实施例，附图某些部件会有省略、放大或缩小，并不代表实际产品的尺寸，此外，附图仅用于示例性说明，不能理解为对本申请的限制。In order to better illustrate the present embodiment, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product. In addition, the drawings are only used for illustrative purposes and should not be construed as limitations on the present application.
具体实施方式Detailed ways
为使本申请的技术方案及其优点更加清楚，下面将结合附图对本申请的技术方案作进一步清楚、完整的详细描述，可以理解的是，此处所描述的具体实施例仅是本申请的部分实施例，其仅用于解释本申请，而非对本申请的限定。需要说明的是，为了便于描述，附图中仅示出了与本申请相关的部分，其他相关部分可参考通常设计。In order to make the technical solution and advantages of the present application clearer, the technical solution of the present application will be described in further detail in detail with reference to the accompanying drawings. It can be understood that the specific embodiments described here are only partial embodiments of the present application, which are only used to explain the present application, not to limit the present application. It should be noted that, for the convenience of description, only the parts related to the present application are shown in the accompanying drawings, and other related parts can refer to the general design.
此外，除非另有定义，本申请描述中所使用的技术术语或者科学术语应当为本申请所属领域内一般技术人员所理解的通常含义。本申请描述中所使用的表示方位的词语，仅用以表示相对的方向或者位置关系，当被描述对象的绝对位置发生改变后，其相对位置关系也可能发生相应的改变。本申请描述中所使用的“包括”指出现在该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。In addition, unless otherwise defined, the technical terms or scientific terms used in the description of this application shall have the usual meanings understood by those of ordinary skill in the art to which this application belongs. The words used in the description of this application to indicate orientation are only used to indicate relative directions or positional relationships. When the absolute position of the described object changes, its relative positional relationship may also change accordingly. The word "include" used in the description of this application indicates that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, but does not exclude other elements or objects.
此外，还需要说明的是，除非另有明确的规定和限定，在本申请的描述中使用的“安装”、“连接”等类似词语应做广义理解，例如，连接可以是固定连接，也可以是可拆卸连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，领域内技术人员可根据具体情况理解其在本申请中的具体含义。In addition, it should be noted that, unless otherwise clearly specified and limited, the words "installation", "connection" and similar terms used in the description of this application should be understood in a broad sense. For example, the connection can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. Technical personnel in the field can understand its specific meaning in this application according to the specific circumstances.
N型MOS管当栅极电压大于源极电压时导通，栅极电压小于或近似等于源极电压时关闭，而P型MOS管当栅极电压小于源极电压时导通，栅极电压大于或近似等于源极电压时关闭，基于此，本申请实施例提供一种放大器正负对称双电源开关控制电路，如图1所示，包括：The N-type MOS tube is turned on when the gate voltage is greater than the source voltage, and is turned off when the gate voltage is less than or approximately equal to the source voltage, while the P-type MOS tube is turned on when the gate voltage is less than the source voltage, and is turned off when the gate voltage is greater than or approximately equal to the source voltage. Based on this, an embodiment of the present application provides an amplifier positive and negative symmetrical dual power switch control circuit, as shown in FIG1, including:
微控制器MCU；Microcontroller MCU;
N型开关控制MOS管Q1，栅极连接微控制器MCU，源极接地；The N-type switch controls the MOS tube Q1, the gate of which is connected to the microcontroller MCU and the source of which is grounded;
第一电阻R1，连接N型开关控制MOS管Q1漏极；A first resistor R1 is connected to the drain of the N-type switch control MOS tube Q1;
第二电阻R2，连接第一电阻R1，以及连接正电源；A second resistor R2 is connected to the first resistor R1 and to a positive power supply;
P型正电源控制MOS管Q2，栅极连接在第一电阻R1、第二电阻R2之间的电路上，源极连接正电源，漏极连接放大器；A P-type positive power supply control MOS tube Q2, the gate of which is connected to the circuit between the first resistor R1 and the second resistor R2, the source of which is connected to the positive power supply, and the drain of which is connected to the amplifier;
P型中间控制MOS管Q3，栅极连接在第一电阻R1、第二电阻R2之间的电路上，源极连接正电源；A P-type intermediate control MOS tube Q3, the gate of which is connected to the circuit between the first resistor R1 and the second resistor R2, and the source of which is connected to the positive power supply;
第三电阻R3，连接P型中间控制MOS管Q3漏极；The third resistor R3 is connected to the drain of the P-type intermediate control MOS tube Q3;
第四电阻R4，连接第三电阻R3；A fourth resistor R4 connected to the third resistor R3;
N型负电源控制MOS管Q4，栅极连接在第三电阻R3、第四电阻R4之间的电路上，源极连接负电源、第四电阻R4，漏极连接放大器。The N-type negative power control MOS tube Q4 has a gate connected to the circuit between the third resistor R3 and the fourth resistor R4, a source connected to the negative power supply and the fourth resistor R4, and a drain connected to the amplifier.
上述实施例公开的放大器正负对称双电源开关控制电路，在微控制器MCU输出低电平时，N型开关控制MOS管Q1的栅极电压近似等于源极电压，N型开关控制MOS管Q1关闭，第一电阻R1、第二电阻R2上的电压不能被N型开关控制MOS管Q1拉低，P型正电源控制MOS管Q2、P型中间控制MOS管Q3的栅极电压近似等于源极电压，P型正电源控制MOS管Q2、P型中间控制MOS管Q3关闭，正电源输出关闭，不输出电压给放大器，同时，第三电阻R3、第四电阻R4上没有电流流过，不产生压降，N型负电源控制MOS管Q4的栅极电压近似等于源极电压，N型负电源控制MOS管Q4关闭，负电源输出关闭，不输出电压给放大器。In the amplifier positive and negative symmetrical dual power switch control circuit disclosed in the above embodiment, when the microcontroller MCU outputs a low level, the gate voltage of the N-type switch control MOS tube Q1 is approximately equal to the source voltage, the N-type switch control MOS tube Q1 is turned off, the voltage on the first resistor R1 and the second resistor R2 cannot be pulled down by the N-type switch control MOS tube Q1, the gate voltage of the P-type positive power control MOS tube Q2 and the P-type intermediate control MOS tube Q3 is approximately equal to the source voltage, the P-type positive power control MOS tube Q2 and the P-type intermediate control MOS tube Q3 are turned off, the positive power output is turned off, and no voltage is output to the amplifier. At the same time, no current flows through the third resistor R3 and the fourth resistor R4, and no voltage drop is generated. The gate voltage of the N-type negative power control MOS tube Q4 is approximately equal to the source voltage, the N-type negative power control MOS tube Q4 is turned off, the negative power output is turned off, and no voltage is output to the amplifier.
上述实施例公开的放大器正负对称双电源开关控制电路，在微控制器MCU输出高电平时，N型开关控制MOS管Q1的栅极电压大于源极电压，N型开关控制MOS管Q1导通，第一电阻R1、第二电阻R2上的电压被N型开关控制MOS管Q1拉低，P型正电源控制MOS管Q2、P型中间控制MOS管Q3的栅极电压小于源极电压，P型正电源控制MOS管Q2、P型中间控制MOS管Q3导通，正电源输出打开，输出电压给放大器，同时，第三电阻R3、第四电阻R4上有电流流过，产生压降，N型负电源控制MOS管Q4的栅极电压大于源极电压，N型负电源控制MOS管Q4打开，负电源输出打开，输出电压给放大器。In the amplifier positive and negative symmetrical dual power switch control circuit disclosed in the above embodiment, when the microcontroller MCU outputs a high level, the gate voltage of the N-type switch control MOS tube Q1 is greater than the source voltage, the N-type switch control MOS tube Q1 is turned on, the voltages on the first resistor R1 and the second resistor R2 are pulled down by the N-type switch control MOS tube Q1, the gate voltages of the P-type positive power control MOS tube Q2 and the P-type intermediate control MOS tube Q3 are less than the source voltage, the P-type positive power control MOS tube Q2 and the P-type intermediate control MOS tube Q3 are turned on, the positive power output is turned on, and the output voltage is given to the amplifier. At the same time, current flows through the third resistor R3 and the fourth resistor R4, generating a voltage drop, the gate voltage of the N-type negative power control MOS tube Q4 is greater than the source voltage, the N-type negative power control MOS tube Q4 is turned on, the negative power output is turned on, and the output voltage is given to the amplifier.
对于上述实施例公开的放大器正负对称双电源开关控制电路，领域内技术人员可以理解的是，其设计采用MOS管作为核心控制元件，对N型MOS管、P型MOS管进行组合设计，以微控制器MCU的低电平、高电平为触发信号，控制放大器正负对称双电源的同时开关，响应速度快，具有纳秒级的快速开关切换能力，且MOS管具有软启动功能，没有机械磨损，有助于防止在启动时因瞬间大电流损坏器件，具有较高的可靠性及其较长的使用寿命，可降低维护成本，并具有较小的体积质量，易于进行微型化设计，此外，MOS管导通电阻低，对电路的功耗低，传输相同功率的情况下，能量损失少，可提高电路的整体能效。As for the amplifier positive and negative symmetrical dual power switch control circuit disclosed in the above embodiment, it can be understood by technicians in the field that its design adopts MOS tube as the core control element, combines N-type MOS tube and P-type MOS tube for design, and uses the low level and high level of the microcontroller MCU as trigger signals to control the simultaneous switching of the positive and negative symmetrical dual power supplies of the amplifier, with fast response speed and nanosecond fast switching capability. The MOS tube has a soft start function and has no mechanical wear, which helps to prevent damage to the device due to instantaneous large current at startup. It has high reliability and a long service life, which can reduce maintenance costs, and has a small volume and mass, which is easy to miniaturize. In addition, the MOS tube has a low on-resistance and low power consumption for the circuit. When the same power is transmitted, there is less energy loss, which can improve the overall energy efficiency of the circuit.
在一些可选的实施例中，上述的放大器正负对称双电源开关控制电路中，还包括：In some optional embodiments, the above amplifier positive and negative symmetrical dual power switch control circuit further includes:
第五电阻R5，设置在微控制器MCU、N型开关控制MOS管Q1栅极之间的电路上。The fifth resistor R5 is arranged in a circuit between the microcontroller MCU and the gate of the N-type switch control MOS tube Q1.
在一些可选的实施例中，上述的放大器正负对称双电源开关控制电路中，还包括：In some optional embodiments, the above amplifier positive and negative symmetrical dual power switch control circuit further includes:
第六电阻R6，连接在第五电阻R5、N型开关控制MOS管Q1栅极之间的电路上，接地，以能够在N型开关控制MOS管Q1栅极提供一个恒定的低电平，当输入信号未提供任何有效电平时，会将N型开关控制MOS管Q1栅极引导到地，这可以确保N型开关控制MOS管Q1栅极处于关闭状态，并防止输入信号漂移导致不可预料的结果，此外，第六电阻R6还可用于防止N型开关控制MOS管Q1栅极输入的干扰或噪声，提供低阻抗路径，吸收来自外部干扰的电流，保持N型开关控制MOS管Q1栅极输入信号的稳定性。The sixth resistor R6 is connected to the circuit between the fifth resistor R5 and the gate of the N-type switch-controlled MOS tube Q1, and is grounded so as to provide a constant low level at the gate of the N-type switch-controlled MOS tube Q1. When the input signal does not provide any valid level, the gate of the N-type switch-controlled MOS tube Q1 is guided to the ground, which can ensure that the gate of the N-type switch-controlled MOS tube Q1 is in a closed state and prevent the input signal from drifting and causing unpredictable results. In addition, the sixth resistor R6 can also be used to prevent interference or noise at the gate input of the N-type switch-controlled MOS tube Q1, provide a low-impedance path, absorb current from external interference, and maintain the stability of the gate input signal of the N-type switch-controlled MOS tube Q1.
在一些可选的实施例中，上述的放大器正负对称双电源开关控制电路中，两个第一电容C1，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地；In some optional embodiments, in the above amplifier positive and negative symmetrical dual power switch control circuit, two first capacitors C1 are connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, and are grounded;
两个第二电容C2，连接在N型负电源控制MOS管Q4漏极、放大器之间的电路上，接地；Two second capacitors C2 are connected to the circuit between the drain of the N-type negative power supply control MOS tube Q4 and the amplifier, and are grounded;
第三电容C3，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地，相较于两个第一电容C1，靠近放大器；The third capacitor C3 is connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, is grounded, and is closer to the amplifier than the two first capacitors C1;
第四电容C4，连接在P型正电源控制MOS管Q2漏极、放大器之间的电路上，接地，相较于两个第二电容C2，靠近放大器。The fourth capacitor C4 is connected to the circuit between the drain of the P-type positive power control MOS tube Q2 and the amplifier, is grounded, and is closer to the amplifier than the two second capacitors C2.
上述实施例公开的放大器正负对称双电源开关控制电路，电容的设计，可保证正负对称双电源对放大器输入电压的稳定性。The amplifier positive and negative symmetrical dual power switch control circuit disclosed in the above embodiment and the capacitor design can ensure the stability of the positive and negative symmetrical dual power supply to the amplifier input voltage.
说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可，在不冲突的情况下，本申请中的实施例及实施例中的技术特征可以相互组合得到新的实施例。The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other. In the absence of conflict, the embodiments in this application and the technical features in the embodiments can be combined with each other to obtain new embodiments.
至此，已经结合附图所示的优选实施方式描述了本申请的技术方案，领域内技术人员应该理解的是，本申请的保护范围显然不局限于这些具体实施方式，在不偏离本申请的原理的前提下，本领域技术人员可以对相关技术特征作出等同的更改或替换，这些更改或替换之后的技术方案都将落入本申请的保护范围之内。So far, the technical solution of the present application has been described in conjunction with the preferred embodiments shown in the accompanying drawings. Those skilled in the art should understand that the scope of protection of the present application is obviously not limited to these specific embodiments. Without departing from the principles of the present application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the scope of protection of the present application.
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