CN118163254B - Wafer dicing blade, dicing device and dicing method - Google Patents
Wafer dicing blade, dicing device and dicing method Download PDFInfo
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- CN118163254B CN118163254B CN202410594001.7A CN202410594001A CN118163254B CN 118163254 B CN118163254 B CN 118163254B CN 202410594001 A CN202410594001 A CN 202410594001A CN 118163254 B CN118163254 B CN 118163254B
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 127
- 238000003825 pressing Methods 0.000 claims abstract description 33
- 238000005056 compaction Methods 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 abstract description 9
- 239000002173 cutting fluid Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 165
- 238000004458 analytical method Methods 0.000 description 17
- 238000004088 simulation Methods 0.000 description 15
- 230000007423 decrease Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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Abstract
The invention provides a wafer dicing blade, a dicing device and a dicing method, comprising a tool rest and a blade; the knife rest is disc-shaped; the cutting edge is arranged around the circumferential edge of the tool rest and extends to the outside of the tool rest; the blade is circular and the outer diameter of the blade is 30mm-50mm. The outer diameter of the wafer dicing blade is smaller than 50mm, so that the pressing angle of the blade during cutting is increased. The compaction angle is increased, so that the cutting fluid can better enter the cutting grinding position, powder generated by grinding is convenient to clean, the cutting fluid takes away heat, heat dissipation is better, and edge breakage is reduced. In addition, the contact area of the blade cutting into the wafer and the film is reduced, and the resistance of the blade is reduced, so that the thinner blade can adapt to the cutting resistance, the blade is further thinned, the cutting groove is narrowed, and the yield of the crystal grains is improved.
Description
Technical Field
The invention relates to the technical field of dicing cutters, in particular to a wafer dicing blade dicing device and a dicing method.
Background
Semiconductor fabrication begins with the processing of silicon by first dicing silicon pillars of 99.9999% purity into wafers of different thickness, typically 4in wafer thickness 520um,6in wafer thickness 670um,8in wafer thickness 720 m,12in wafer thickness 775um. Individual circuit chips are etched in accordance with the windows on the wafer, and an array of small squares is presented in a uniform manner on the wafer, each small square representing a circuit chip capable of performing a particular function.
The development direction of semiconductor devices is that a single chip is smaller and smaller, and the number of transistors integrated in a single chip is larger and larger. The trend in silicon wafers is that the wafer size is larger and larger, and silicon columns can grow to 1in, 2in, 4in, 6in (about 150 mm) and 8in (about 200 mm) along with the progress of the process, and 12in and even larger specifications (14 in, 16in and even more than 20 in) are developed in recent years.
Several to hundreds of thousands of circuit chips are repeatedly etched on a wafer. On the wafer, the circuit chip units are isolated from each other by a certain area, and the area is called a chip grain isolation area and a scribing groove. The chip die needs to be singulated and individually removed by efficient means before it can be used. In this case, a dicing step is required to divide the wafer into individual die, and then the die is subjected to steps such as microscopic inspection, soldering, bonding, and capping, thereby packaging a finished integrated circuit which can realize various functions and is not easily damaged by the environment.
The wafer can be cut by physical cutting, and the wafer is divided into square chip grains through the transverse and longitudinal cutting motions of the dicing blade. Currently, a method for cutting a wafer by using a diamond grinding wheel dicing blade still takes the main stream. The mechanical dicing force directly acts on the wafer surface, so that stress damage is generated in the crystal, and chip edge breakage and wafer breakage are easily caused. Particularly, when dicing wafers with a thickness of 100um or less, wafer breakage is extremely likely to occur. The mechanical dicing speed is generally 1-100mm/s, the dicing speed is relatively slow, the dicing groove width is required to be larger than 30um, and the dicing groove width of the high-reliability circuit is required to be larger, even 50-100um, so that the integrity and the reliability of the chip after dicing are ensured.
The wafer dicing blade is used for cutting the wafer into a plurality of dies. It typically has a sharp blade that can easily scratch the sheet material without causing damage or cracking.
The dicing mark generated after dicing by the dicing blade in the prior art is wider, so that the chip design has to reserve a wider dicing channel, and the number of grains which can be produced by the wafer is reduced. Meanwhile, when the tool mark is wider, the generated edge breakage is more obvious. The edge chipping is a phenomenon that mechanical stress is generated on the Front and Back surfaces of the wafer by mechanical dicing due to brittleness of the wafer material, and as a result, a Front chipping (FSC-Front SIDE CHIPPING) and a Back chipping (BSC-Back SIDE CHIPPING) are generated at the edges of the chip.
Disclosure of Invention
The invention aims to provide a wafer dicing blade, a dicing device and a dicing method, which can increase the yield of crystal grains, reduce edge breakage and improve the processing efficiency.
The embodiment of the invention is realized by the following technical scheme:
A wafer dicing blade comprises a blade carrier and a blade; the tool rest is disc-shaped; the blade is arranged around the circumferential edge of the tool holder and extends towards the outside of the tool holder; the cutting edge is annular, and the outer diameter of the cutting edge is 30-50 mm.
Further, the outer diameter of the blade is 30mm-45mm.
Further, the outer diameter of the blade is 30mm-40mm.
Further, the outer diameter of the blade is 38mm.
Further, the outer diameter of the blade is 36mm.
Further, the outer diameter of the blade is 30mm.
A wafer dicing device comprises the wafer dicing blade.
A wafer dicing method adopts the wafer dicing device to conduct dicing.
Further, the outer diameter of the blade is 38mm; setting the thickness of the blade as w; the area of the cutting edge cutting into the wafer and the film is 0.1687-0.8757 square millimeters; the contact area between the edge of the cutting edge and the wafer is 0.7140w-2.2232w square millimeter; the compaction angle is 5.09-8.83 degrees.
Further, the outer diameter of the blade is 36mm; setting the thickness of the blade as w; the area of the cutting edge cutting into the wafer and the film is 0.1642-0.8522 square millimeters; the contact area between the edge of the cutting edge and the wafer is 0.6949w-2.0934w square millimeter; the pressing angle is 5.23-9.03 degrees.
The technical scheme of the embodiment of the invention has at least the following advantages and beneficial effects:
the outer diameter of the wafer dicing blade is smaller than 50mm, so that the pressing angle of the blade during cutting is increased. The compaction angle is increased, so that the cutting fluid can better enter the cutting grinding position, powder generated by grinding is convenient to clean, the cutting fluid takes away heat, heat dissipation is better, and edge breakage is reduced. In addition, the area of the blade cutting into the wafer and the film is reduced, and the resistance of the blade is reduced, so that the thinner blade can adapt to the cutting resistance, the blade is further thinned, the cutting groove is narrowed, and the yield of the crystal grains is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of the dicing blade of the present invention;
FIG. 2 is a top view of the dicing blade of the invention;
FIG. 3 is a schematic view of a larger size dicing blade cutting a wafer;
FIG. 4 is a schematic view of a smaller size dicing blade cutting a wafer;
FIG. 5 is an enlarged view of FIG. 3 at a;
FIG. 6 is an enlarged view at b in FIG. 4;
FIG. 7 is a schematic view of the blade shaking when cutting a wafer;
FIG. 8 is an interface diagram of a DWP calculator calculating die yield for an 8 inch wafer with 50 micron kerfs;
FIG. 9 is an interface diagram of a DWP calculator calculating die yield for an 8-inch wafer with 20-micron kerfs;
FIG. 10 is a schematic diagram of a simulated portion of a tool holder end face;
FIG. 11 is a schematic diagram of a simulated portion of the outer edge of the dicing blade;
FIG. 12 is a graph of simulated results of phi 55.9 saw blade deformation;
FIG. 13 is a graph of simulated results of a phi 50 dicing blade deformation;
FIG. 14 is a graph of simulated results of a phi 45 dicing blade deformation;
FIG. 15 is a graph of simulated results of phi 40 saw blade deformation;
FIG. 16 is a graph of simulated results of a phi 38 dicing blade deformation;
FIG. 17 is a graph of simulated results of phi 36 saw blade deformation;
FIG. 18 is a graph showing the results of a phi 30 saw blade deformation simulation;
Fig. 19 is a schematic diagram showing the connection of the dicing blade to the main shaft.
Icon: 1-knife rest, 2-knife edge, 3-nozzle, 4-wafer, 5-film, 6-hold-down angle, 7-cut-in area, 8-spindle.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Fig. 1 and 2 are schematic structural views of a dicing blade, which includes a blade holder 1 and a blade 2. The blade holder 1 is used for supporting the blade 2 and for connecting a drive device such as a motor. The cutting edge 2 is arranged in a ring shape around the edge of the circular holder 1 and extends outside the holder 1.
In dicing the wafer 4, dicing quality and die yield are two very important indicators. For cut quality, a common quality problem is edge chipping. Through analysis of the edge breakage reasons, the following edge breakage reasons are summarized: one is because the force applied to the wafer 4 by the dicing blade during dicing is excessive; secondly, powder is generated in cutting and enters between the blade 2 and the wafer 4 so as to be in friction collision with the wafer 4; thirdly, the shaking amplitude of the dicing blade in cutting is larger.
Under the same external conditions such as wafer size, the reason for low die yield is that the dicing streets are too wide, which depends on the thicker blade thickness and the larger wobble amplitude of the blade 2. There is no reasonable solution to these technical problems in the prior art. Therefore, there is an urgent need to propose an effective solution to solve the problem of edge chipping and the problem of low die yield.
The wafer 4 is then coated with a film 5 prior to dicing. At the same time, the cutting fluid is sprayed to the cutting position through the nozzle 3 during cutting. The cutting fluid can timely wash away the powder generated by cutting, so that the contact opportunity of the powder and the wafer 4 is reduced, the abrasion of the powder to the wafer 4 is reduced, and the edge breakage amount during cutting of the wafer 4 is also reduced. Meanwhile, the cutting fluid can also play a role in cooling, so that the cutting quality is better guaranteed.
As shown in fig. 3, when the blade 2 cuts the wafer 4, the blade cuts to a depth greater than the thickness of the wafer 4, so that the blade 2 cuts through the wafer 4 and also cuts into the interior of the film 5. Since the film 5 is not completely cut, the separated grains remain stuck to the film 5, facilitating the removal of all grains through the film 5 at one time. When the wafer 4 is cut, an included angle between a tangent line of a point where the blade 2 contacts the surface of the wafer 4 and the surface of the wafer 4 is set as a pressing angle 6.
For the same wafer 4, the depth of penetration of the blade 2 needs to be fixed. As shown in fig. 4, if the outer diameter of the blade 2 is reduced, the hold-down angle 6 of the blade 2 with the wafer 4 increases. Therefore, the cutting fluid can better enter between the cutting edge 2 and the wafer 4, and further, powder generated by cutting can be better discharged, and edge breakage is reduced. In addition, when the diameter of the blade 2 is reduced, the arc line where the edge of the blade 2 contacts the wafer 4 becomes shorter. That is, the distance between the blade 2 and the wafer 4 where the powder stays therebetween becomes shorter, and is discharged more quickly. This is also more advantageous in reducing edge chipping.
The blade comprises two side surfaces at two sides and a blade surface where the blade is positioned. The comparison of fig. 3 and 4 also yields: when the depth of penetration of the blade 2 is constant, the area of penetration of the blade 2 into the wafer 4 and the film 5 (the area of penetration of the blade side into the wafer and the film) decreases, that is, the penetration area 7 decreases, after the diameter of the blade 2 decreases. At the same time, the shorter arc of the edge of the blade 2 contacting the wafer 4 also makes the contact area of the blade edge of the blade 2 with the wafer 4 (the contact area of the blade edge surface with the wafer) smaller. These result in a reduced resistance to rotation of the dicing blade, which in turn enables the thinner blade 2 to also withstand the resistance to cutting, enabling the blade 2 to be lighter and thinner. The thinner blade 2 can make the width of the cutting groove of the blade 2 on the wafer 4 narrower, thereby improving the number of grains produced by the wafer 4 and improving the yield of the grains.
The reduced area of the blade 2 cutting into the wafer 4 and the film 5 also allows more of the blade 2 to contact the outside and thus better dissipate heat. The resistance of the blade 2 is reduced, so that the load of a motor for driving the dicing blade to rotate is reduced, the rotating speed of the motor can be further increased to 60000-80000 revolutions per minute, and edge breakage can be reduced better.
Meanwhile, as shown in fig. 5 and 6, the blade 2 applies a force F to the wafer 4. The force F is decomposed into a force F1 in the horizontal direction and a force F2 in the vertical direction. As can be seen from a comparison of fig. 5 and 6, the smaller the diameter of the blade 2, the smaller the F2. That is, the lower the pressing force of the blade 2 against the wafer 4. This also results in a smaller force on the wafer 4 from the blade 2, which is beneficial for edge chipping relief.
The dicing blade will always have a slight wobble during rotation due to the nature of the machine itself. As shown in fig. 7, the solid line portion is a schematic view of cutting the wafer 4 when the blade 2 is completely free of wobble; the broken line portion is a schematic diagram of cutting the wafer 4 when the blade 2 is oscillated. The width of the cutting groove on the wafer 4 is greater than the thickness of the blade 2 due to the wobbling of the blade 2. From the principle of physics analysis it is possible to: when the dicing blade rotates, the further from the rotation center, the more remarkable the shake is. Reducing the diameter of the blade 2 reduces the wobble amplitude of the edge of the blade 2, which in turn results in a narrower width of the cutting slot. With the development of technology, the width of the grains is gradually reduced, so that the width of the grains is reduced to micron level. Thus, a slight widening of the dicing groove width may significantly decrease the die yield of the entire wafer 4. It can be seen that reducing the wobble of the blade 2 has an important effect on the die yield of the wafer 4.
The thickness of the blade 2 is designed to meet the rigidity requirement, so that the cutting can be effectively performed. The thinner the blade 2, the narrower the cutting slot, and the greater the die yield, while meeting the rigidity requirement. However, the dicing blade of the prior art has a large load during cutting due to its structure, the blade 2 is stressed greatly, and the strength requirement on the blade 2 is high. The thickness of the blade 2 is generally 10-15 μm. It has been found that the overall strength and toughness of the blade 2 are improved by reducing the diameter of the blade 2, and reference is made to the maximum deformation of the blade 2 at various outer diameters in table 1. This allows the smaller the diameter of the blade 2, the thinner the thickness of the blade 2 can be made at equal strength. The thinner the blade 2, the narrower the cutting slot, and the greater the number of dies that can be produced by a single wafer 4. The number of dies that can be produced for a single wafer 4 can be calculated using a DWP calculator. The DWP calculator is a calculation program for the number of dies that can be produced by the wafer 4 developed by the company beginner, beijing. The number of the grains which can be produced by the wafer 4 can be calculated according to the parameters of the grain size, the horizontal scribing channel width, the vertical scribing channel width, the diameter of the wafer 4, the edge removing width, the defect density and the like. Meanwhile, the above parameters may be inputted according to the actual practice. Taking an 8 inch wafer 4 as an example, the area of the wafer 4 with 5mm outermost width is generally of poor quality and does not account for the area of the die produced. The grain length and width were set to 0.6mm, and the defect density was set to 0.1#/sq.cm.
The prior art blade 2 has a thickness of 15 microns and the blade 2 leaves a cut groove of about 50 microns in the wafer 4. The interface and results of the calculation by the DWP calculator are shown in fig. 8, and the number of grains that can be produced is 66564 grains.
From the data in table 7, it can be seen that the deflection of the blade decreases under equal force after the outer diameter of the blade decreases. That is, after the outer diameter of the blade is reduced, the proper reduction of the thickness of the blade can ensure that the deformation of the blade meets the requirement under the condition of meeting the requirement of the cutting force of the wafer. Simultaneously, because the load of the blade 2 is reduced, the stress is smaller, the heat dissipation is good, and the thickness of the blade 2 can be promoted to be thinner. The cutting edge 2 has a thickness of 10 μm as an example, and the width of the cutting groove is about 20 μm by experiment. The interface and results of the calculation by the DWP calculator are shown in fig. 9, and the number of grains that can be produced is calculated to be 73173 grains. Therefore, when the blade 2 is reduced to 10 μm, the yield of crystal grains can be improved by about 9%.
Through the technical analysis, the problem of edge breakage of the wafer 4 and the problem of low grain yield in the prior art can be solved by reducing the diameter of the cutting edge 2. The setting of the diameter of the blade 2 and its effect are described with particular reference to the following examples.
Example 1:
in this embodiment, the blade 2 has a diameter of 55.9mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1.
Table 1:
the simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 12, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 8.153e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.2162-1.1001 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.886w-2.4497w square millimeters; the pressing angle 6 is 4.08-7.03 degrees. That is, when the blade 2 having an outer diameter of 55.9mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.2162 square millimeters, the contact area between the blade and the wafer 4 is 0.886w square millimeters, and the pressing angle 6 is 4.08 degrees. When the blade 2 with the outer diameter of 55.9mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 1.1001 square millimeters, the contact area of the blade and the wafer 4 is 2.4497w square millimeters, and the pressing angle 6 is 7.03 degrees.
Example 2:
In this embodiment, the blade 2 has a diameter of 50mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 13, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 7.721e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1936-1.0049 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.8188w-2.2385w square millimeters; the pressing angle 6 is 4.44-7.69 degrees. That is, when the blade 2 having an outer diameter of 50mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1936 square millimeters, the contact area of the blade and the wafer 4 is 0.8188w square millimeters, and the pressing angle 6 is 4.44 degrees. When the blade 2 with the outer diameter of 50mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 1.0049 square millimeters, the contact area of the blade and the wafer 4 is 2.2385w square millimeters, and the pressing angle 6 is 7.69 degrees.
Example 3:
In this embodiment, the blade 2 has a diameter of 45mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 14, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 7.708e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1836-0.9532 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.7769w-2.1239w square millimeters; the pressing angle 6 is 4.68-8.11 degrees. That is, when the blade 2 having an outer diameter of 45mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1836 square mm, the contact area between the blade and the wafer 4 is 0.7769w square mm, and the pressing angle 6 is 4.68 degrees. When the blade 2 with the outer diameter of 45mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.9532 square millimeters, the contact area of the blade and the wafer 4 is 2.1239w square millimeters, and the pressing angle 6 is 8.11 degrees.
Example 4:
In this embodiment, the blade 2 has a diameter of 40mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 15, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 7.352e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1731-0.8985 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.7441w-2.0027w square millimeters; the pressing angle 6 is 4.96-8.60 degrees. That is, when the blade 2 having an outer diameter of 40mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1731 square millimeters, the contact area of the blade and the wafer 4 is 0.7441w square millimeters, and the pressing angle 6 is 4.96 degrees. When the blade 2 with the outer diameter of 40mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.8985 square millimeters, the contact area of the blade and the wafer 4 is 2.0027w square millimeters, and the pressing angle 6 is 8.60 degrees.
Example 5:
In this embodiment, the blade 2 has a diameter of 38mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 16, the maximum deformation position of the dicing blade was located at the portion of the blade 2, and the maximum deformation amount of the portion of the blade 2 was 7.721e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1687-0.8757 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.7140w-1.9521w square millimeters; the pressing angle 6 is 5.09-8.83 degrees. That is, when the blade 2 having an outer diameter of 38mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1687 square millimeters, the contact area of the blade and the wafer 4 is 0.7140w square millimeters, and the pressing angle 6 is 5.09 degrees. When the blade 2 with the outer diameter of 38mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.8757 square millimeters, the contact area of the blade and the wafer 4 is 1.9521w square millimeters, and the pressing angle 6 is 8.83 degrees.
Example 6:
In this embodiment, the blade 2 has a diameter of 36mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 17, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 6.659e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1642-0.8522 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.6949w-1.9002w square millimeters; the pressing angle 6 is 5.23-9.07 degrees. That is, when the blade 2 having an outer diameter of 36mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1642 square millimeters, the contact area of the blade and the wafer 4 is 0.6949w square millimeters, and the pressing angle 6 is 5.23 degrees. When the blade 2 with the outer diameter of 36mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.8522 square millimeters, the contact area of the blade and the wafer 4 is 1.9002w square millimeters, and the pressing angle 6 is 9.07 degrees.
Example 7:
In this embodiment, the blade 2 has a diameter of 30mm. First, the stress simulation analysis is carried out. The properties of the materials used for the dicing blade in the analysis are shown in table 1. The simulated portion of the dicing blade is shown in fig. 10 and 11, and the simulated portion includes an inner hole of the fixing surface and a region with a 2mm annular width of both end surfaces, and a circular ring portion with an inner 3.95mm outer edge of the dicing blade, and these regions exert a force of 10 newtons. As a result of the simulation, as shown in FIG. 18, the maximum deformation position of the dicing blade was located at the blade 2 portion, and the maximum deformation amount of the blade 2 portion was 5.782e-05mm.
The thickness of the wafer 4 is usually 50 to 200 μm, and the depth of the blade 2 cutting into the film 5 during dicing is 25 μm. Let the thickness of the blade 2 be w. The area of the cutting edge 2 cutting into the wafer 4 and the film 5 is 0.1499-0.7777 square millimeters, and the contact area of the cutting edge and the wafer 4 is 0.6345w-1.7352w square millimeters; the pressing angle 6 is 5.73-9.94 degrees. That is, when the blade 2 having an outer diameter of 30mm cuts a wafer 4 having a thickness of 50 μm, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1499 square millimeters, the contact area of the blade and the wafer 4 is 0.6345w square millimeters, and the pressing angle 6 is 5.73 degrees. When the blade 2 with the outer diameter of 30mm cuts the wafer 4 with the thickness of 200 micrometers, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.7777 square millimeters, the contact area of the blade and the wafer 4 is 1.7352w square millimeters, and the pressing angle 6 is 9.94 degrees.
The data for 7 examples are now summarized in Table 2.
TABLE 2
As can be seen from table 2, as the outer diameter of the blade 2 decreases, the maximum deformation of the blade 2 decreases, the cutting area 7 of the blade decreases, and the pressing angle 6 increases. The stress of the blade 2 is smaller, the blade can be thinner, the cutting groove of the blade 2 on the surface of the wafer 4 is narrower, and the yield of grains is improved. These effects also can be better dispel the heat to the cutting place, reduce the effort of wafer 4 and cutting edge 2 interactions, better washing cutting produces powder, and then alleviate wafer 4 and collapse limit for cutting quality is better.
The invention also provides a wafer dicing device, and the dicing blade is adopted by the dicing blade, so that the dicing quality is better, and the yield of the crystal grains is higher. As shown in fig. 19, the tool rest 1 is mounted on a spindle 8 of a driving mechanism, and since the dicing apparatus is of the prior art, the structure and principle thereof will not be described in detail in this specification.
The invention also provides a wafer dicing method, which adopts the dicing device to conduct dicing.
The thickness of the blade 2 is set to be w when the outer diameter of the blade 2 is 38 mm; the thickness w may be 10 microns. The dicing blade of this embodiment is used to cut a wafer 4 of 50-200 microns thickness by controlling the thickness of the wafer 4, and the thickness of the blade 2 cut into the film 5 is controlled to 25 microns. At this time, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1687-0.8757 square millimeters; the contact area between the edge of the blade 2 and the wafer 4 is 0.7140w-2.2232w square millimeter; the pressing angle 6 is 5.09-8.83 degrees.
When the outer diameter of the blade 2 is 36mm, the thickness of the blade 2 is set to be w; the thickness w may be 10 microns. The dicing blade of this embodiment is used to cut a wafer 4 of 50-200 microns thickness by controlling the thickness of the wafer 4, and the thickness of the blade 2 cut into the film 5 is controlled to 25 microns. At this time, the area of the blade 2 cut into the wafer 4 and the film 5 is 0.1642-0.8522 square millimeters; the contact area between the edge of the blade 2 and the wafer 4 is 0.6949w-2.0934w square millimeter; the pressing angle 6 is 5.23-9.03 degrees.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 38mm;
setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1687-0.8757 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.7140w-1.9521w square millimeter; the compaction angle (6) is 5.09-8.83 degrees.
2. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 36mm;
Setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1642-0.8522 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.6949w-1.9002w square millimeter; the compaction angle (6) is 5.23-9.07 degrees.
3. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 30mm;
Setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1499-0.7777 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.6345w-1.7352w square millimeter; the compaction angle (6) is 5.73-9.94 degrees.
4. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 40mm;
Setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1731-0.8985 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.7441w-2.0027w square millimeter; the pressing angle (6) is 4.96-8.60 degrees.
5. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 45mm;
Setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1836-0.9532 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.7769w-2.1239w square millimeter; the pressing angle (6) is 4.68-8.11 degrees.
6. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 50mm;
setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.1936-1.0049 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.8188w-2.2385w square millimeters; the pressing angle (6) is 4.44-7.69 degrees.
7. The wafer dicing method is characterized in that: scribing with a scribing cutter; the dicing blade comprises a blade rest (1) and a blade (2); the tool rest (1) is disc-shaped; the cutting edge (2) is arranged around the circumferential edge of the tool holder (1) and extends towards the outside of the tool holder (1); the cutting edge (2) is in a circular ring shape, and the outer diameter of the cutting edge (2) is 55.9mm;
setting the thickness of the blade (2) as w; the area of the cutting edge (2) cutting into the wafer (4) and the film (5) is 0.2162-1.1001 square millimeters; the contact area between the edge of the cutting edge (2) and the wafer (4) is 0.886w-2.4497w square millimeter; the pressing angle (6) is 4.08-7.03 degrees.
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| JPH08107089A (en) * | 1994-10-05 | 1996-04-23 | Showa Denko Kk | Dicing alignment method |
| TWM293527U (en) * | 2004-06-28 | 2006-07-01 | Applied Materials Inc | Substrate processing chamber component having surface which adheres process residues |
| JP2006133084A (en) * | 2004-11-05 | 2006-05-25 | Jsr Corp | Probe card and wafer inspection device |
| EP1863090A1 (en) * | 2006-06-01 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP5118424B2 (en) * | 2007-09-05 | 2013-01-16 | 株式会社ディスコ | Auxiliary member for dicing |
| CN207267260U (en) * | 2017-08-08 | 2018-04-24 | 李承国 | A kind of cutter holder assembly of inner circle cutting machine |
| CN207403009U (en) * | 2017-11-14 | 2018-05-25 | 万安县泰鑫电子有限责任公司 | A kind of quartz crystal frequency chip raw material cutter device |
| JP7033003B2 (en) * | 2018-05-23 | 2022-03-09 | 日東電工株式会社 | Dicing die bond film |
| WO2021193935A1 (en) * | 2020-03-27 | 2021-09-30 | リンテック株式会社 | Sheet for production of semiconductor device and method for producing semiconductor chip with film-form adhesive |
| CN111633479A (en) * | 2020-06-15 | 2020-09-08 | 郑州磨料磨具磨削研究所有限公司 | Method for repairing scribing cutter for gallium arsenide wafer |
| JP7536398B2 (en) * | 2020-08-07 | 2024-08-20 | 株式会社ディスコ | Cutting Equipment |
| KR102412353B1 (en) * | 2022-02-21 | 2022-06-23 | (주)네온테크 | Dicing device for correcting cutting depth by using vision and correction method for cutting depth by using vision |
| CN117415964A (en) * | 2023-12-13 | 2024-01-19 | 南通伟腾半导体科技有限公司 | Anti-cracking method for cutting chip by wafer cutting blade |
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| CN104062855A (en) * | 2013-03-19 | 2014-09-24 | 富士电机株式会社 | Method For Manufacturing Semiconductor Device And Exposure Mask Used In The Same Method |
| CN116001115A (en) * | 2023-03-10 | 2023-04-25 | 豪威半导体（上海）有限责任公司 | Sharpening method of cutting machine and wafer cutting method |
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