CN118280952A - Chip packaging structure and manufacturing method thereof - Google Patents
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
Description
技术领域Technical Field
本申请涉及半导体技术领域,具体而言,涉及一种芯片封装结构及其制作方法。The present application relates to the field of semiconductor technology, and in particular to a chip packaging structure and a manufacturing method thereof.
背景技术Background technique
引线框架是带有延长引线的合金框架,在芯片封装中具有以下功能:1)为芯片提供机械支撑,在塑封以及后续使用中都起到了支撑作用;2)提供电气连接,连通芯片和外部电路;3)提供散热通路,管脚相对塑封体有更低的热阻,是主要的散热渠道。在芯片封装时,比如方形扁平无引脚封装(Quad Flat No-leads Package,QFN),通过打线(wire bonding)的方式实现芯片与引线框架之间的电性连接。The lead frame is an alloy frame with extended leads. It has the following functions in chip packaging: 1) Provide mechanical support for the chip, which plays a supporting role in plastic packaging and subsequent use; 2) Provide electrical connection, connecting the chip and the external circuit; 3) Provide a heat dissipation path. The pins have lower thermal resistance than the plastic package and are the main heat dissipation channel. When packaging chips, such as the Quad Flat No-leads Package (QFN), the electrical connection between the chip and the lead frame is achieved by wire bonding.
但是,随着集成电路技术的发展,单颗芯片的功能日益增多,内部重新布线没有引脚或者互联的节点,此时传统的方式引线框架实现起来比较困难。传统具有引线框架的QFN封装虽有散热性好,机械强度高等优点,但所使用引线框架的引脚数有限且体积较大,难以实现较高的内部线路互联密度,难以满足更多、更复杂的功能需求。However, with the development of integrated circuit technology, the functions of a single chip are increasing day by day, and the internal rewiring has no pins or interconnected nodes, which makes it difficult to implement the traditional lead frame. Although the traditional QFN package with lead frame has the advantages of good heat dissipation and high mechanical strength, the lead frame used has a limited number of pins and a large volume, making it difficult to achieve a high internal line interconnection density and meet more and more complex functional requirements.
发明内容Summary of the invention
本申请的目的包括提供一种芯片封装结构及其制作方法,其能够兼顾较佳的散热性能、结构强度以及高密度线路互联。The purpose of the present application includes providing a chip packaging structure and a manufacturing method thereof, which can take into account better heat dissipation performance, structural strength and high-density circuit interconnection.
本申请的实施例可以这样实现:The embodiments of the present application can be implemented as follows:
第一方面,本申请提供一种芯片封装结构,包括:In a first aspect, the present application provides a chip packaging structure, including:
引线框架;Lead frame;
第一芯片,第一芯片贴装于引线框架并通过第一导线与引线框架电连接;A first chip, the first chip is mounted on a lead frame and is electrically connected to the lead frame through a first wire;
基板,基板具有避让腔,基板贴装于引线框架,且第一芯片容纳于避让腔内,基板上设置有线路,线路通过第二导线与引线框架电连接;A substrate, wherein the substrate has an avoidance cavity, the substrate is mounted on the lead frame, and the first chip is accommodated in the avoidance cavity, a circuit is arranged on the substrate, and the circuit is electrically connected to the lead frame through a second wire;
第二芯片,第二芯片贴装于基板背离引线框架的一侧,第二芯片与基板的线路电连接;A second chip, the second chip is mounted on a side of the substrate away from the lead frame, and the second chip is electrically connected to a circuit of the substrate;
塑封体,塑封体包裹基板和第二芯片。The plastic package wraps the substrate and the second chip.
在可选的实施方式中,引线框架包括位于中部的散热盘,第一芯片与散热盘之间通过导热胶连接。In an optional embodiment, the lead frame includes a heat sink located in the middle, and the first chip is connected to the heat sink by a thermally conductive adhesive.
在可选的实施方式中,基板与引线框架之间通过DAF膜粘接。In an optional embodiment, the substrate and the lead frame are bonded together by a DAF film.
在可选的实施方式中,第二芯片正装于基板,第二芯片通过第三导线与基板的线路电连接。In an optional embodiment, the second chip is mounted on the substrate, and the second chip is electrically connected to the circuit of the substrate through a third wire.
在可选的实施方式中,第二芯片与基板之间通过DAF膜粘接。In an optional embodiment, the second chip is bonded to the substrate via a DAF film.
在可选的实施方式中,第二芯片倒装于基板,第二芯片通过金属凸点与基板的线路电连接。In an optional embodiment, the second chip is flipped on the substrate, and the second chip is electrically connected to the circuit of the substrate through metal bumps.
在可选的实施方式中,避让腔沿基板的厚度方向贯穿基板,第二芯片覆盖避让腔远离引线框架一侧的开口。In an optional implementation, the avoidance cavity penetrates the substrate along the thickness direction of the substrate, and the second chip covers an opening of the avoidance cavity on a side away from the lead frame.
在可选的实施方式中,基板为树脂基板或者陶瓷基板。In an optional embodiment, the substrate is a resin substrate or a ceramic substrate.
在可选的实施方式中,第一芯片为逻辑芯片,第二芯片为存储芯片。In an optional implementation, the first chip is a logic chip, and the second chip is a memory chip.
第二方面,本申请提供一种芯片封装结构的制作方法,包括:In a second aspect, the present application provides a method for manufacturing a chip packaging structure, comprising:
获取引线框架,在引线框架上正装第一芯片,制作第一导线将第一芯片与引线框架电连接;Obtain a lead frame, mount a first chip on the lead frame, and make a first wire to electrically connect the first chip to the lead frame;
获取具有线路的基板,基板上开设有避让腔,将基板贴装于引线框架,并使第一芯片收容于避让腔内;Obtain a substrate with a circuit, a avoidance cavity is opened on the substrate, the substrate is mounted on a lead frame, and a first chip is accommodated in the avoidance cavity;
在基板上贴装第二芯片,并将第二芯片与基板电连接;Mounting a second chip on the substrate and electrically connecting the second chip to the substrate;
制作第二导线将基板的线路与引线框架电连接;Making a second wire to electrically connect the circuit of the substrate with the lead frame;
在引线框架上制作塑封体以包裹基板和第二芯片。A plastic package is manufactured on the lead frame to encapsulate the substrate and the second chip.
本申请实施例的有益效果包括,例如:The beneficial effects of the embodiments of the present application include, for example:
本申请提供的芯片封装结构包括引线框架、第一芯片、基板、第二芯片以及塑封体。第一芯片贴装于引线框架并通过第一导线与引线框架电连接。基板具有避让腔,基板贴装于引线框架,且第一芯片容纳于避让腔内,基板上设置有线路,线路通过第二导线与引线框架电连接。第二芯片贴装于基板背离引线框架的一侧,第二芯片与基板的线路电连接。塑封体包裹基板和第二芯片。本实施例中,由于使用了引线框架,因此具有较好的机械强度,且能够保证第一芯片具有较好的散热。同时,芯片封装结构中还设置了第二芯片,丰富了整个芯片封装结构的功能。通过设置具有避让腔的基板,使得第一芯片、基板以及第二芯片的结构能够堆叠地更为紧凑。基板的线路可以根据需要进行设置,比如设置多层或单层的布线层,从而满足信号传输的需要。因此,本申请实施例提供的芯片封装结构既具有引线框架散热效果好的特点,也通过基板实现了高走线密度,将第一芯片、第二芯片堆叠也节省了平面空间。本申请实施例提供的芯片封装结构的制作方法可用于制作上述的芯片封装结构,从而实现上述的有益效果。The chip packaging structure provided in the present application includes a lead frame, a first chip, a substrate, a second chip and a plastic package. The first chip is mounted on the lead frame and electrically connected to the lead frame through a first wire. The substrate has an avoidance cavity, the substrate is mounted on the lead frame, and the first chip is accommodated in the avoidance cavity. A circuit is arranged on the substrate, and the circuit is electrically connected to the lead frame through a second wire. The second chip is mounted on the side of the substrate away from the lead frame, and the second chip is electrically connected to the circuit of the substrate. The plastic package wraps the substrate and the second chip. In this embodiment, since a lead frame is used, it has good mechanical strength and can ensure that the first chip has good heat dissipation. At the same time, a second chip is also arranged in the chip packaging structure, enriching the function of the entire chip packaging structure. By arranging a substrate with an avoidance cavity, the structure of the first chip, the substrate and the second chip can be stacked more compactly. The circuit of the substrate can be arranged as needed, such as arranging a multi-layer or single-layer wiring layer, so as to meet the needs of signal transmission. Therefore, the chip packaging structure provided in the embodiment of the present application has the characteristics of good heat dissipation effect of the lead frame, and also realizes high wiring density through the substrate, and stacking the first chip and the second chip also saves plane space. The manufacturing method of the chip packaging structure provided in the embodiment of the present application can be used to manufacture the above-mentioned chip packaging structure, thereby achieving the above-mentioned beneficial effects.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
图1为本申请一种实施例中芯片封装结构的示意图;FIG1 is a schematic diagram of a chip packaging structure in an embodiment of the present application;
图2为本申请一种实施例中引线框架、基板以及第一芯片的设置示意图;FIG2 is a schematic diagram of the arrangement of a lead frame, a substrate and a first chip in one embodiment of the present application;
图3为本申请另一种实施例中芯片封装结构的示意图;FIG3 is a schematic diagram of a chip packaging structure in another embodiment of the present application;
图4为本申请一种实施例中芯片封装结构的制作方法的流程图;FIG4 is a flow chart of a method for manufacturing a chip packaging structure in one embodiment of the present application;
图5至图8为本申请一种实施例中芯片封装结构在制作过程中的不同状态示意图。5 to 8 are schematic diagrams of different states of a chip packaging structure during a manufacturing process in an embodiment of the present application.
图标:010-芯片封装结构;100-引线框架;110-散热盘;200-第一芯片;210-第一导线;300-基板;301-避让腔;310-第二导线;400-第二芯片;410-第三导线;420-金属凸点;500-塑封体。Icon: 010 - chip packaging structure; 100 - lead frame; 110 - heat sink; 200 - first chip; 210 - first wire; 300 - substrate; 301 - avoidance cavity; 310 - second wire; 400 - second chip; 410 - third wire; 420 - metal bump; 500 - plastic package.
具体实施方式Detailed ways
为使本申请实施例的目的、技术方案和优点更加清楚,下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
因此,以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围,而是仅仅表示本申请的选定实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not require further definition and explanation in the subsequent drawings.
在本申请的描述中,需要说明的是,若出现术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,或者是该发明产品使用时惯常摆放的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。In the description of the present application, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, or is the orientation or position relationship in which the product of the invention is usually placed when used. It is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.
此外,若出现术语“第一”、“第二”等仅用于区分描述,而不能理解为指示或暗示相对重要性。In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.
需要说明的是,在不冲突的情况下,本申请的实施例中的特征可以相互结合。It should be noted that, in the absence of conflict, the features in the embodiments of the present application may be combined with each other.
现有技术中,传统具有引线框架的QFN封装虽有散热性好,机械强度高等优点,但所使用引线框架的引脚数有限且体积较大,因此难以实现较高的走线密度。随着集成电路技术的发展,单颗芯片的功能日益增多,传统使用引线框架的方式难以在较小体积下满足更多的功能需求。In the prior art, although the traditional QFN package with lead frame has advantages such as good heat dissipation and high mechanical strength, the lead frame used has a limited number of pins and a large volume, so it is difficult to achieve a high wiring density. With the development of integrated circuit technology, the functions of a single chip are increasing, and the traditional method of using lead frame is difficult to meet more functional requirements in a smaller volume.
为此,本申请实施例提供一种芯片封装结构,通过在贴装有第一芯片的引线框架上贴装具有线路的基板,并在基板上堆叠设置第二芯片,从而实现较好的散热、较高的走线密度,能够在小体积下满足更多的功能需求。To this end, an embodiment of the present application provides a chip packaging structure, which achieves better heat dissipation and higher wiring density by mounting a substrate with a circuit on a lead frame with a first chip mounted on it, and stacking a second chip on the substrate, thereby meeting more functional requirements in a small volume.
图1为本申请一种实施例中芯片封装结构010的示意图。如图1所示,本申请实施例提供的芯片封装结构010包括引线框架100、第一芯片200、基板300、第二芯片400以及塑封体500。第一芯片200贴装于引线框架100并通过第一导线210与引线框架100电连接。基板300具有避让腔301,基板300贴装于引线框架100,且第一芯片200容纳于避让腔301内,基板300上设置有线路,线路通过第二导线310与引线框架100电连接。第二芯片400贴装于基板300背离引线框架100的一侧,第二芯片400与基板300的线路电连接。塑封体500设置于引线框架100的一侧并包裹基板300和第二芯片400。FIG. 1 is a schematic diagram of a chip packaging structure 010 in an embodiment of the present application. As shown in FIG. 1 , the chip packaging structure 010 provided in the embodiment of the present application includes a lead frame 100, a first chip 200, a substrate 300, a second chip 400, and a plastic package 500. The first chip 200 is mounted on the lead frame 100 and is electrically connected to the lead frame 100 through a first wire 210. The substrate 300 has an avoidance cavity 301, the substrate 300 is mounted on the lead frame 100, and the first chip 200 is accommodated in the avoidance cavity 301. A circuit is provided on the substrate 300, and the circuit is electrically connected to the lead frame 100 through a second wire 310. The second chip 400 is mounted on a side of the substrate 300 away from the lead frame 100, and the second chip 400 is electrically connected to the circuit of the substrate 300. The plastic package 500 is arranged on one side of the lead frame 100 and wraps the substrate 300 and the second chip 400.
本实施例中,引线框架100为合金材质,具有较佳的强度、较好的导热性以及电信号传输功能。引线框架100为第一芯片200、基板300以及塑封体500提供支撑,保证了整个芯片封装结构010具有较佳的机械强度。第一芯片200贴装于引线框架100,因此第一芯片200发出的热量可以通过引线框架100高效地传输到芯片封装结构010的表面(图1中的下表面),从而实现对第一芯片200较好地散热。并且,引线框架100还能够实现第一芯片200与第二芯片400之间,芯片封装结构010与外部器件(比如电路板)之间的电连接。In this embodiment, the lead frame 100 is made of alloy material, which has good strength, good thermal conductivity and electrical signal transmission function. The lead frame 100 provides support for the first chip 200, the substrate 300 and the plastic package 500, ensuring that the entire chip packaging structure 010 has good mechanical strength. The first chip 200 is mounted on the lead frame 100, so the heat emitted by the first chip 200 can be efficiently transmitted to the surface of the chip packaging structure 010 (the lower surface in Figure 1) through the lead frame 100, thereby achieving better heat dissipation for the first chip 200. In addition, the lead frame 100 can also realize electrical connection between the first chip 200 and the second chip 400, and between the chip packaging structure 010 and external devices (such as circuit boards).
本申请实施例中,引线框架100的外轮廓为矩形,其中部设置有散热盘110,第一芯片200贴装于散热盘110上。In the embodiment of the present application, the outer contour of the lead frame 100 is a rectangle, a heat sink 110 is disposed in the middle thereof, and the first chip 200 is mounted on the heat sink 110 .
进一步的,第一芯片200是正装于引线框架100,即第一芯片200的管脚位于背离引线框架100的一侧。第一导线210的一端连接第一芯片200的管脚,另一端与引线框架100连接,从而实现第一芯片200与引线框架100的电性互连。第一导线210可以通过引线键合工艺(即打线,wire bonding)形成。第一芯片200与引线框架100(本实施例中具体为散热盘110)之间通过导热胶连接。导热胶既能够保证较佳的连接强度,同时也具有较高的导热系数。导热胶能够消除第一芯片200与散热盘110之间的气隙,能够更好地将第一芯片200发出的热量传导至散热盘110,从而降低第一芯片200过热的风险,保证其运行时性能的稳定。Furthermore, the first chip 200 is mounted on the lead frame 100, that is, the pin of the first chip 200 is located on the side away from the lead frame 100. One end of the first wire 210 is connected to the pin of the first chip 200, and the other end is connected to the lead frame 100, so as to realize the electrical interconnection between the first chip 200 and the lead frame 100. The first wire 210 can be formed by a wire bonding process (i.e., wire bonding). The first chip 200 and the lead frame 100 (specifically the heat sink 110 in this embodiment) are connected by thermal conductive adhesive. The thermal conductive adhesive can ensure better connection strength and also has a higher thermal conductivity. The thermal conductive adhesive can eliminate the air gap between the first chip 200 and the heat sink 110, and can better conduct the heat emitted by the first chip 200 to the heat sink 110, thereby reducing the risk of overheating of the first chip 200 and ensuring the stability of its performance during operation.
在本申请实施例中,基板300上设置有用于信号传输的线路。基板300可根据需要设置一层或者多层包含有线路的布线层,布线层可位于基板300内部。在本实施例中,基板300的表面具有焊盘,焊盘与基板300上的线路以及基板300外部的导线连接。In the embodiment of the present application, a circuit for signal transmission is provided on the substrate 300. The substrate 300 may be provided with one or more wiring layers including the circuit as required, and the wiring layer may be located inside the substrate 300. In the present embodiment, the surface of the substrate 300 has a pad, and the pad is connected to the circuit on the substrate 300 and the wire outside the substrate 300.
具体的,在本实施例中,基板300的表面设置有第一焊盘和第二焊盘(图中未示出),第一焊盘通过第二导线310与引线框架100电连接,第二焊盘通过第三导线410与第二芯片400电连接。通过这种连接方式,也实现了第二芯片400与引线框架100间接地相连。第二导线310可以通过引线键合工艺制作。Specifically, in this embodiment, a first pad and a second pad (not shown) are provided on the surface of the substrate 300, the first pad is electrically connected to the lead frame 100 via a second wire 310, and the second pad is electrically connected to the second chip 400 via a third wire 410. In this connection mode, the second chip 400 is indirectly connected to the lead frame 100. The second wire 310 can be manufactured by a wire bonding process.
进一步的,基板300与引线框架100之间通过DAF膜粘接。DAF膜(Die Attach Film)是一种特殊的晶片黏结薄膜,可选地,DAF膜的结构包括第一胶面、第二胶面和中间层。第一胶面可用于与基板300粘接,第二胶面可用于与引线框架100粘接,中间层位于第一胶面和第二胶面之间,为高导热树脂层,其具有支撑、填充、导热的作用。DAF膜相较于胶水而言,不会在贴装时溢出,并且更加平整,厚度可选。当然,在其他可选的实施例中,基板300与引线框架100之间也可以通过胶水来粘接。Furthermore, the substrate 300 and the lead frame 100 are bonded together by a DAF film. DAF film (Die Attach Film) is a special wafer bonding film. Optionally, the structure of the DAF film includes a first adhesive surface, a second adhesive surface, and an intermediate layer. The first adhesive surface can be used to bond with the substrate 300, and the second adhesive surface can be used to bond with the lead frame 100. The intermediate layer is located between the first adhesive surface and the second adhesive surface, and is a high thermal conductivity resin layer, which has the functions of supporting, filling, and conducting heat. Compared with glue, DAF film will not overflow during mounting, is smoother, and has an optional thickness. Of course, in other optional embodiments, the substrate 300 and the lead frame 100 can also be bonded together by glue.
图2为本申请一种实施例中引线框架100、基板300以及第一芯片200的设置示意图。如图1和图2所示,在本实施例中,基板300的形状为矩形,其外轮廓尺寸小于引线框架100,并且其四个边分别与引线框架100的四个边平行。基板300上的避让腔301用于避让和容纳第一芯片200以及第一导线210,避免基板300贴装于引线框架100后与第一芯片200和第一导线210产生干涉。通过将第一芯片200收容于基板300的避让腔301内,能够使封装结构更加紧凑,避免横向并排设置或者纵向堆叠导致尺寸增加。本实施例中,避让腔301的形状也是矩形,其四个边分别与基板300外轮廓的四个边平行。FIG. 2 is a schematic diagram of the arrangement of the lead frame 100, the substrate 300 and the first chip 200 in one embodiment of the present application. As shown in FIG. 1 and FIG. 2, in the present embodiment, the substrate 300 is in the shape of a rectangle, and its outer contour is smaller than that of the lead frame 100, and its four sides are parallel to the four sides of the lead frame 100. The avoidance cavity 301 on the substrate 300 is used to avoid and accommodate the first chip 200 and the first wire 210, so as to avoid interference with the first chip 200 and the first wire 210 after the substrate 300 is mounted on the lead frame 100. By accommodating the first chip 200 in the avoidance cavity 301 of the substrate 300, the packaging structure can be made more compact, and the increase in size caused by the horizontal side-by-side arrangement or the vertical stacking can be avoided. In the present embodiment, the shape of the avoidance cavity 301 is also a rectangle, and its four sides are parallel to the four sides of the outer contour of the substrate 300.
在本实施例中,避让腔301沿基板300的厚度方向贯穿基板300,第二芯片400覆盖避让腔301远离引线框架100一侧的开口,使得第二芯片400与第一芯片200在基板300的厚度方向上间隔相对。在可选的其他实施例中,避让腔301可以是开口朝向引线框架100的槽体,即避让腔301不贯穿基板300,仅具有朝向引线框架100的一个开口。In this embodiment, the avoidance cavity 301 penetrates the substrate 300 along the thickness direction of the substrate 300, and the second chip 400 covers the opening of the avoidance cavity 301 on the side away from the lead frame 100, so that the second chip 400 and the first chip 200 are spaced and opposite to each other in the thickness direction of the substrate 300. In other optional embodiments, the avoidance cavity 301 can be a groove body with an opening toward the lead frame 100, that is, the avoidance cavity 301 does not penetrate the substrate 300, and has only one opening toward the lead frame 100.
在本实施例中,第二芯片400正装于基板300,即第二芯片400的管脚位于其背离基板300的一侧。第二芯片400的管脚通过第三导线410与基板300上的第二焊盘连接。第三导线410可以通过引线键合工艺制作。进一步的,第二芯片400与基板300之间通过DAF膜粘接。In this embodiment, the second chip 400 is mounted on the substrate 300, that is, the pins of the second chip 400 are located on the side away from the substrate 300. The pins of the second chip 400 are connected to the second pads on the substrate 300 through the third wires 410. The third wires 410 can be made by wire bonding process. Further, the second chip 400 and the substrate 300 are bonded by DAF film.
在本实施例中,第一导线210、第二导线310以及第三导线410的材质可以是金、银、铜等具有较佳导电性的金属材质。In this embodiment, the materials of the first conductive wire 210 , the second conductive wire 310 , and the third conductive wire 410 may be metal materials with good conductivity, such as gold, silver, and copper.
可选地,基板300为树脂基板,树脂基板便于设计且成本低廉,内部可以形成若干布线层,当需要交叉布线时,可将导线交叉部署至另一个金属层,实现高的内部线路互联密度。在其他实施例中,基板300还可以是陶瓷基板,陶瓷基板具有导热率高、耐高压、耐高温、防腐蚀、介质损耗低等特点。Optionally, the substrate 300 is a resin substrate, which is easy to design and low in cost, and can form several wiring layers inside. When cross wiring is required, the wires can be cross-deployed to another metal layer to achieve high internal line interconnection density. In other embodiments, the substrate 300 can also be a ceramic substrate, which has the characteristics of high thermal conductivity, high voltage resistance, high temperature resistance, corrosion resistance, and low dielectric loss.
第一芯片200与第二芯片400可以是具有不同功能的芯片,由于第一芯片200贴装于引线框架100,因此第一芯片200相较于第二芯片400而言,具有较好的散热环境。因此可选地,第一芯片200的发热量高于第二芯片400,比如,第一芯片200为逻辑芯片,第二芯片400为存储芯片。存储芯片相对于逻辑芯片而言,运算量和发热量都相对较小。第二芯片400具体可以是具有高引线密度的存储芯片。The first chip 200 and the second chip 400 may be chips with different functions. Since the first chip 200 is mounted on the lead frame 100, the first chip 200 has a better heat dissipation environment than the second chip 400. Therefore, optionally, the heat generation of the first chip 200 is higher than that of the second chip 400. For example, the first chip 200 is a logic chip and the second chip 400 is a memory chip. Compared with the logic chip, the memory chip has a relatively small amount of computation and heat generation. The second chip 400 may specifically be a memory chip with a high lead density.
应理解,在可选的其他实施例中,第一芯片200和第二芯片400也可以采用其他类型的芯片,或者采用相同类型的芯片。It should be understood that in other optional embodiments, the first chip 200 and the second chip 400 may also be chips of other types, or chips of the same type.
图3为本申请另一种实施例中芯片封装结构010的示意图。如图3所示,在可选的实施例,第二芯片400倒装于基板300,第二芯片400通过金属凸点420与基板300的线路(具体是基板300上的焊盘)电连接。这种设置方式相较于图1实施例而言省略了第三导线410,在厚度方向上能够节省一定的空间。FIG3 is a schematic diagram of a chip packaging structure 010 in another embodiment of the present application. As shown in FIG3, in an optional embodiment, the second chip 400 is flipped on the substrate 300, and the second chip 400 is electrically connected to the circuit of the substrate 300 (specifically, the pad on the substrate 300) through the metal bump 420. Compared with the embodiment of FIG1, this arrangement omits the third wire 410, which can save a certain amount of space in the thickness direction.
图4为本申请一种实施例中芯片封装结构的制作方法的流程图;图5至图8为本申请一种实施例中芯片封装结构010在制作过程中的不同状态示意图。如图4至图8所示,本申请实施例提供的芯片封装结构的制作方法可以用于制作上述实施例提供的芯片封装结构010,其具体包括以下步骤:FIG4 is a flow chart of a method for manufacturing a chip packaging structure in an embodiment of the present application; FIG5 to FIG8 are schematic diagrams of different states of a chip packaging structure 010 in an embodiment of the present application during the manufacturing process. As shown in FIG4 to FIG8, the method for manufacturing a chip packaging structure provided in an embodiment of the present application can be used to manufacture the chip packaging structure 010 provided in the above embodiment, and specifically includes the following steps:
步骤S100,获取引线框架100,在引线框架100上正装第一芯片200,制作第一导线210将第一芯片200与引线框架100电连接。Step S100 , obtaining a lead frame 100 , mounting a first chip 200 on the lead frame 100 , and making a first wire 210 to electrically connect the first chip 200 to the lead frame 100 .
以制作图1实施例的芯片封装结构010为例,将第一芯片200通过导热胶贴装于引线框架100的散热盘110,并通过引线键合工艺制作第一导线210将第一芯片200与引线框架100电连接,如图5所示。导热胶具有较高的导热系数,能够满足发热量较高的第一芯片200的散热需求。在可选的其他实施例中,第一芯片200也可以通过其他方式贴装,比如通过DAF膜贴装。Taking the chip packaging structure 010 of the embodiment of FIG. 1 as an example, the first chip 200 is mounted on the heat sink 110 of the lead frame 100 through a thermally conductive adhesive, and the first wire 210 is made through a wire bonding process to electrically connect the first chip 200 to the lead frame 100, as shown in FIG. 5. The thermally conductive adhesive has a high thermal conductivity and can meet the heat dissipation requirements of the first chip 200 with a high heat generation. In other optional embodiments, the first chip 200 can also be mounted in other ways, such as by a DAF film.
步骤S200,获取具有线路的基板300,基板300上开设有避让腔301,将基板300贴装于引线框架100,并使第一芯片200收容于避让腔301内。Step S200 , obtaining a substrate 300 with circuits, the substrate 300 is provided with an escape cavity 301 , mounting the substrate 300 on the lead frame 100 , and accommodating the first chip 200 in the escape cavity 301 .
以制作图1实施例的芯片封装结构010为例,可利用DAF膜将基板300贴装于引线框架100,并使第一芯片200和第一导线210处于避让腔301中,第一导线210和第一芯片200的高度不大于基板300的厚度,如图6所示。Taking the chip packaging structure 010 of the embodiment of Figure 1 as an example, the substrate 300 can be mounted on the lead frame 100 using a DAF film, and the first chip 200 and the first wire 210 are placed in the avoidance cavity 301. The height of the first wire 210 and the first chip 200 is not greater than the thickness of the substrate 300, as shown in Figure 6.
步骤S300,在基板300上贴装第二芯片400,并将第二芯片400与基板300电连接。Step S300 , mounting the second chip 400 on the substrate 300 , and electrically connecting the second chip 400 to the substrate 300 .
以制作图1实施例的芯片封装结构010为例,第二芯片400的发热量相对较小,因此可以采用DAF膜来将其贴装于基板300,可避免使用胶水所可能导致的溢胶问题。第二芯片400覆盖避让腔301远离引线框架100一侧的开口。Taking the chip packaging structure 010 of the embodiment of FIG. 1 as an example, the second chip 400 generates relatively little heat, so it can be mounted on the substrate 300 using a DAF film, thereby avoiding the problem of glue overflow that may be caused by using glue. The second chip 400 covers the opening of the avoidance cavity 301 away from the lead frame 100.
进一步的,第二芯片400正装于基板300,并通过引线键合工艺形成第三导线410,第三导线410将第二芯片400的管脚和基板300上的第二焊盘连接,如图7所示。Furthermore, the second chip 400 is mounted on the substrate 300 , and a third wire 410 is formed by a wire bonding process. The third wire 410 connects the pin of the second chip 400 and the second pad on the substrate 300 , as shown in FIG. 7 .
若是制作图3实施例的芯片封装结构010,则可以不制作第三导线410,而是制作金属凸点420,并将第二芯片400倒装于基板300,使金属凸点420与基板300上的第二焊盘连接。If the chip package structure 010 of the embodiment of FIG. 3 is manufactured, the third wire 410 may not be manufactured, but the metal bump 420 may be manufactured, and the second chip 400 is flipped onto the substrate 300 to connect the metal bump 420 to the second pad on the substrate 300 .
步骤S400,制作第二导线310将基板300的线路与引线框架100电连接。Step S400 , manufacturing a second wire 310 to electrically connect the circuit of the substrate 300 with the lead frame 100 .
以制作图1实施例的芯片封装结构010为例,可通过引线键合工艺形成第二导线310,第二导线310将基板300上的第一焊盘与引线框架100连接,如图8所示。应理解,步骤S400与步骤S300的先后顺序可以对调。Taking the chip package structure 010 of the embodiment of FIG1 as an example, the second wire 310 can be formed by a wire bonding process, and the second wire 310 connects the first pad on the substrate 300 to the lead frame 100, as shown in FIG8. It should be understood that the order of step S400 and step S300 can be reversed.
步骤S500,在引线框架100上制作塑封体500以包裹基板300和第二芯片400。Step S500 , manufacturing a plastic package 500 on the lead frame 100 to encapsulate the substrate 300 and the second chip 400 .
以制作图1实施例的芯片封装结构010为例,在引线框架100设置有基板300的一侧制作塑封体500,使得塑封体500以包裹基板300和第二芯片400,从而对基板300、第二芯片400进行保护。最终得到如图1所示的芯片封装结构010。Taking the chip packaging structure 010 of the embodiment of FIG. 1 as an example, a plastic package 500 is manufactured on the side of the lead frame 100 where the substrate 300 is provided, so that the plastic package 500 wraps the substrate 300 and the second chip 400, thereby protecting the substrate 300 and the second chip 400. Finally, the chip packaging structure 010 shown in FIG. 1 is obtained.
综上所述,本申请实施例提供了一种芯片封装结构010及其制作方法。本申请提供的芯片封装结构010包括引线框架100、第一芯片200、基板300、第二芯片400以及塑封体500。第一芯片200贴装于引线框架100并通过第一导线210与引线框架100电连接。基板300具有避让腔301,基板300贴装于引线框架100,且第一芯片200容纳于避让腔301内,基板300上设置有线路,线路通过第二导线310与引线框架100电连接。第二芯片400贴装于基板300背离引线框架100的一侧,第二芯片400与基板300的线路电连接。塑封体500包裹基板300和第二芯片400。本实施例中,由于使用了引线框架100,因此具有较好的机械强度,且能够保证第一芯片200具有较好的散热。同时,芯片封装结构010中还设置了第二芯片400,丰富了整个芯片封装结构010的功能。通过设置具有避让腔301的基板300,使得第一芯片200、基板300以及第二芯片400的结构能够堆叠的更为紧凑。基板300的线路可以根据需要进行设置,比如设置多层或单层的布线层,从而满足信号传输的需要。因此,本申请实施例提供的芯片封装结构010既具有引线框架100散热效果好的特点,也通过基板300实现了高走线密度,将第一芯片200、第二芯片400堆叠也节省了平面空间。本申请实施例提供的芯片封装结构的制作方法可用于制作上述的芯片封装结构010,从而实现上述的有益效果。In summary, the embodiment of the present application provides a chip packaging structure 010 and a manufacturing method thereof. The chip packaging structure 010 provided in the present application includes a lead frame 100, a first chip 200, a substrate 300, a second chip 400 and a plastic package 500. The first chip 200 is mounted on the lead frame 100 and is electrically connected to the lead frame 100 through a first wire 210. The substrate 300 has an avoidance cavity 301, the substrate 300 is mounted on the lead frame 100, and the first chip 200 is accommodated in the avoidance cavity 301. A circuit is provided on the substrate 300, and the circuit is electrically connected to the lead frame 100 through a second wire 310. The second chip 400 is mounted on the side of the substrate 300 away from the lead frame 100, and the second chip 400 is electrically connected to the circuit of the substrate 300. The plastic package 500 wraps the substrate 300 and the second chip 400. In this embodiment, due to the use of the lead frame 100, it has good mechanical strength and can ensure that the first chip 200 has good heat dissipation. At the same time, the second chip 400 is also provided in the chip packaging structure 010, enriching the function of the entire chip packaging structure 010. By providing a substrate 300 with an avoidance cavity 301, the structure of the first chip 200, the substrate 300 and the second chip 400 can be stacked more compactly. The circuit of the substrate 300 can be set as needed, such as setting a multi-layer or single-layer wiring layer, so as to meet the needs of signal transmission. Therefore, the chip packaging structure 010 provided in the embodiment of the present application not only has the characteristics of good heat dissipation effect of the lead frame 100, but also realizes high wiring density through the substrate 300, and stacking the first chip 200 and the second chip 400 also saves plane space. The manufacturing method of the chip packaging structure provided in the embodiment of the present application can be used to manufacture the above-mentioned chip packaging structure 010, so as to achieve the above-mentioned beneficial effects.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到的变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以权利要求的保护范围为准。The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.
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Application publication date: 20240702 |