CN118335583B - Air inlet device and semiconductor processing equipment comprising same - Google Patents

Abstract

The embodiment of the application relates to the technical field of semiconductor processing, in particular to an air inlet device and semiconductor processing equipment comprising the same. The air inlet device comprises a first pipeline, a second pipeline and a circulation structure. The first pipeline is provided with a first channel for circulating first-class gas, the second pipeline enters the first channel along the axial direction of the first pipeline and extends coaxially in the first channel, the second pipeline is provided with a second channel for circulating second-class gas, the tail end of the second channel is arranged adjacent to the end part of the first channel, the circulating structure is arranged on the second pipeline and is positioned in the first channel, and the circulating structure is provided with a plurality of first gas channels which are uniformly arranged around the second pipeline in the axial direction and form a first preset angle with the second pipeline in the axial direction. The air inlet device and the semiconductor processing equipment comprising the same provided by the embodiment of the application can realize uniform air inlet of multiple paths of gases under the condition that multiple gases are not premixed.

Description

Air inlet device and semiconductor processing equipment comprising same

Technical Field

The embodiment of the application relates to the technical field of semiconductor processing, in particular to an air inlet device and semiconductor processing equipment comprising the same.

Background

In the processing of semiconductor processing equipment such as semiconductor film deposition, plasma etching, plasma photoresist removal and the like, various types of process gases are required to be adopted in order to adapt to the requirements of reaction processes. Different kinds of process gases enter the reaction cavity chamber together to participate in the reaction. The different types of process gases are usually premixed to form a mixed gas and then introduced into the chamber of the reaction chamber. That is, multiple types of process gases are typically premixed. However, some process gases are mixed together for a long time after premixing, so that reaction coagulation is easy to occur, particles are generated in a pipeline, and the processing technology is influenced.

However, different types of process gases are introduced into the reaction cavity chamber without premixing, and the problem of uneven air inlet is generated, so that the reaction efficiency, the product quality and the production efficiency are negatively affected. Therefore, how to achieve uniform intake of multiple gases without premixing the multiple gases remains an important issue.

Disclosure of Invention

The embodiment of the application aims to provide an air inlet device and semiconductor processing equipment comprising the same, which can realize uniform air inlet of multiple paths of gases under the condition that the multiple gases are not premixed.

In order to solve the technical problems, an embodiment of the application provides an air inlet device for introducing process gas into a reaction cavity, wherein the air inlet device comprises a first pipeline, a second pipeline and a circulation structure. The first pipeline is provided with a first channel for circulating a first type of gas, the second pipeline enters the first channel along the axial direction of the first pipeline and extends coaxially in the first channel, the second pipeline is provided with a second channel for circulating a second type of gas, the tail end of the second channel is adjacent to the end part of the first channel, the circulating structure is arranged on the second pipeline and is positioned in the first channel and is provided with a plurality of first gas channels uniformly arranged around the second pipeline in the axial direction of the second pipeline and oriented to form a first preset angle with the axial direction of the second pipeline, one end part of the first channel and one end part of the second channel are used for communicating with the gas inlet of the reaction cavity, the gas circulating in the other end part enters the one communicating with the gas inlet of the reaction cavity along the direction forming the first preset angle with the axial direction of the second pipeline through the circulating structure, so that the gas circulating in the second channel jointly enters the gas inlet of the reaction cavity, and the circulating structure is arranged adjacent to the gas inlet of the reaction cavity on the gas flowing path.

In some embodiments, the first conduit is provided with a first gas inlet at the end of the first channel remote from the flow-through structure, the first gas inlet being for connection to a first gas source supplying a first type of gas, and/or a second gas inlet at the end of the second channel remote from the gas inlet of the reaction chamber, the second gas inlet being for connection to a second gas source supplying a second type of gas.

In some embodiments, a nozzle is disposed at an end of one of the first channel and the second channel, which is in communication with the gas inlet of the reaction chamber, the nozzle having a plurality of second gas channels disposed axially around the first channel and oriented to form a second predetermined angle with the first channel, and the gas flowing in the first channel and the second channel jointly enters the reaction chamber through the second gas channels along a direction forming the second predetermined angle with the first channel.

In some embodiments, the showerhead is hollow, frustoconical, the showerhead is coaxial with the first conduit, the smaller cross-section end of the showerhead faces the interior of the reaction chamber, and the second gas passage is disposed on a side of the showerhead.

In some embodiments, the end face of the smaller cross section of the spray head is also uniformly provided with a plurality of third gas channels facing the gas spray head.

In some embodiments, the first gas channel is offset from the second gas channel in a direction axially forming a second predetermined angle with the second conduit.

In some embodiments, the first preset angle is different in angle magnitude from the second preset angle.

In some embodiments, the plurality of first gas passages are distributed on a plurality of planes perpendicular to the axis of the first conduit, the first gas passages located on adjacent two planes being disposed equidistant in the direction of the axis of the first conduit, and/or the plurality of second gas passages are distributed on a plurality of planes perpendicular to the axis of the first conduit, the second gas passages located on adjacent two planes being disposed equidistant in the direction of the axis of the first conduit.

In some embodiments, the first channel is provided in a straight shape, or the first channel is provided in a bent shape.

In some embodiments, the first channel is disposed in a straight configuration, the end of the second channel is positioned within the first channel, and the flow-through structure is disposed at the end of the second channel.

In some embodiments, the first channel is arranged in a straight shape, the end of the second channel is positioned outside the first channel, and the flow structure is arranged at a position of the second channel away from the gas inlet of the reaction chamber.

In some embodiments, a plate-like structure surrounding the second duct and located on the intake path of the first duct is provided in the first duct, the plate-like structure extending from the outside of the wall of the second duct toward the inside of the wall of the first duct with a space therebetween.

The embodiment of the application also provides semiconductor processing equipment, which comprises a reaction cavity with an air inlet, and further comprises the air inlet device, wherein the end part of one of the first channel and the second channel of the air inlet device is communicated with the air inlet of the reaction cavity.

According to the air inlet device provided by the embodiment of the application, the nested design of the central tube and the outer tube is adopted to realize the air inlet of two paths of air, and the two pipelines are coaxially arranged. The first type of gas flows in a first channel outside the central tube and the second type of gas flows in a channel between the intermediate tube and the outer tube. The circulation structure is arranged on the central tube, and two types of gases enter the reaction cavity air inlet jointly in the central tube or the outer tube after passing through the circulation structure adjacent to the reaction cavity air inlet. Specifically, one end of one pipeline in the central pipe or the outer pipe is connected with the gas inlet of the reaction cavity, and the gas in the other pipeline flows into the pipeline connected with the gas inlet of the reaction cavity through the circulation structure, so that the two types of gases are mixed and enter the gas inlet of the reaction cavity. The device is used for carrying out non-premixed air inlet on two types of gases so as to avoid generating particulate matters. The two paths of gas enter the reaction cavity from the same air inlet of the reaction cavity, so that central symmetry air intake is realized, and the distribution quantity of the two paths of gas entering the reaction cavity is uniform. Therefore, even air intake of multiple paths of gases can be realized under the condition that multiple gases are not premixed.

According to the semiconductor processing equipment provided by the embodiment of the application, the air inlet device with the nested pipeline design is adopted, so that multi-channel gas can enter the reaction cavity in a centrosymmetric mode, the gas distribution uniformity in the semiconductor processing process is improved, and the quality of a final product is improved.

Drawings

One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.

Fig. 1 is a schematic structural view of an air intake device according to some embodiments of the present application;

FIG. 2 is a schematic view of another air intake device according to some embodiments of the present application;

Fig. 3 is a schematic structural view of still another air intake device according to some embodiments of the present application;

fig. 4 is a schematic structural view of a semiconductor processing apparatus according to some embodiments of the present application.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. However, those of ordinary skill in the art will understand that in various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. The claimed application may be practiced without these specific details and with various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present application, and the embodiments can be mutually combined and referred to without contradiction.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs, the terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting of the application, and the terms "comprising" and "having" and any variations thereof in the description of the application and the claims and the above description of the drawings are intended to cover non-exclusive inclusions.

In the description of embodiments of the present application, the technical terms "first," "second," and the like are used merely to distinguish between different objects and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated, a particular order or a primary or secondary relationship. In the description of the embodiments of the present application, the meaning of "plurality" is two or more unless explicitly defined otherwise.

In the description of the embodiment of the present application, the term "and/or" is merely an association relationship describing the association object, and indicates that three relationships may exist, for example, a and/or B, and may indicate that a exists alone, while a and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.

During semiconductor device processing, it is often desirable to uniformly introduce gases into a reaction chamber for chemical reactions. However, multiple inlets without premixing often result in different channels of gases entering from different locations in the reaction chamber, and multiple channels of gases cannot enter from the inlet at the center of the top of the reaction chamber at the same time. The air inlet uniformity of the multipath gases when entering the reaction cavity cannot be ensured, so that local deviation is generated in the reaction process, the performance of partial products is unstable or does not meet the specification requirements, and the uniformity and consistency of the products are affected.

In existing semiconductor processing equipment, a plurality of different process gases are typically premixed and introduced into the reaction chamber through an inlet port in the center of the top of the reaction chamber. This process employs a gas mixing device to ensure uniform premixing of the various gases. The premixed gas flows into the reaction cavity through an air inlet channel positioned in the center of the top of the reaction cavity, and then reaches the region of the substrate of the objective table to participate in the reaction. The final reaction product is pumped out of the reaction chamber. In the gas inlet mode, even gas inlet can be realized from the center of the top of the reaction cavity, but some process gases are mixed together for a long time during premixing to generate reaction condensation, so that particles are generated in a pipeline, and the processing technology is influenced.

To this end, some embodiments of the present application provide a semiconductor processing apparatus, in which an air intake device is designed at an air intake end, and the air intake device adopts a nested design of a central tube and an outer tube. One path of gas enters from the central pipe, the other path of gas enters from the central pipe and the outer pipe, a circulating structure adjacent to the air inlet of the reaction cavity is arranged on the central pipe, the two paths of gas are ensured to jointly enter the air inlet of the reaction cavity through the circulating structure, and central symmetry air inlet is realized, so that the distribution quantity of the two paths of gas entering the reaction cavity is uniform. Therefore, even air intake of multiple paths of gases can be realized under the condition that multiple gases are not premixed.

The following describes the structure of an air inlet device in a semiconductor processing apparatus according to some embodiments of the present application with reference to fig. 1 to 3, where the air inlet device is used to introduce a process gas into a reaction chamber.

As shown in fig. 1 to 3, an air intake apparatus according to some embodiments of the present application includes a first duct 10, a second duct 20, and a flow structure 30. The first duct 10 has a first passage through which a first kind of gas flows, the second duct 20 which is introduced into the first passage in an axial direction of the first duct 10 and extends coaxially within the first passage, the second duct 20 has a second passage through which a second kind of gas flows, an end of which is disposed adjacent to an end of the first passage, a flow structure 30 which is disposed on the second duct 20 and is located within the first passage, the flow structure 30 having a plurality of first gas passages 31 which are uniformly disposed around the second duct 20 in an axial direction and are oriented to form a first predetermined angle with the axial direction of the second duct 20, an end of one of the first passage and the second passage being for communication with an inlet port of the reaction chamber 40 (shown in fig. 4), and a gas flowing in the other one of the first passage and the second passage being introduced into one of the inlet ports of the reaction chamber 40 in a direction forming the first predetermined angle with the axial direction of the second duct 20 via the flow structure 30, the gas flowing in both of the flow structure 30 being jointly introduced into the inlet port of the reaction chamber 40, the flow structure 30 being disposed adjacent to the inlet port of the reaction chamber 40 in a flow path of the gas.

The first pipe 10 and the second pipe 20 supply different gases when the gases are introduced into the reaction chamber 40, and the flow structure 30 can communicate the first passage of the first pipe 10 with the second passage of the second pipe 20, so that the gases flowing in the two pipes can be introduced into the reaction chamber 40 from one place. That is, when the second passage communicates with the gas inlet of the reaction chamber 40, the first type gas in the first passage may enter the second passage through the plurality of first gas passages 31, and thus jointly enter the reaction chamber 40. Or when the first channel is communicated with the gas inlet of the reaction cavity 40, the second type gas in the second channel can enter the first channel through the plurality of first gas channels 31 and then jointly enter the reaction cavity 40. The first gas passages 31 are uniformly distributed, and when the gas flows through the plurality of first gas passages 31, the gas can uniformly enter another passage in a plurality of gas flows. When the multiple streams enter another channel in a direction forming a first predetermined angle with the axial direction of the first pipe 10, the multiple streams collide and mix with another type of gas.

By arranging the flow-through structure 30 adjacent to the gas inlet of the reaction chamber on the gas flow path, the time and distance for multiple paths of gases to enter the gas inlet of the reaction chamber together is shortened, and the gases of the first type and the gases of the second type are mixed and enter the reaction chamber 40 from the gas inlet of the reaction chamber 40 together uniformly.

The two gases flow in the respective duct passages after entering the first duct 10 and the second duct 20, respectively. As shown in fig. 1, the gas flowing in the first passage of the first duct 10 flows in the direction indicated by the broken-line arrow in fig. 1. The gas flowing in the second channel of the second duct 20 flows in the direction indicated by the solid arrows in fig. 1, and finally enters the first channel of the first duct 10 through the flow structure 30, and is mixed with the first type gas in the first duct 10 at the gas inlet end. And jointly enter from the air inlet of the reaction chamber 40 to reach the region where the substrate 42 of the bearing structure 41 is located, and participate in the reaction process.

Or as shown in fig. 2, the gas flowing in the first passage of the first duct 10 flows in the direction indicated by the broken-line arrow in fig. 2. The gas flowing in the second passage of the second duct 20 flows in the direction indicated by the solid arrow in fig. 2. Finally, the gas flowing in the first channel of the first pipeline 10 enters the second channel of the second pipeline 20 through the flowing structure 30, and is mixed with the second type of gas in the second pipeline 20. And jointly enter from the air inlet of the reaction chamber 40 to reach the region where the substrate 42 of the bearing structure 41 is located, and participate in the reaction process. Unlike fig. 1, the air mixing area in the air inlet of fig. 2 is larger, the air mixing path is longer, and the air mixing path can be selected according to practical situations.

According to the air inlet device provided by some embodiments of the application, the nested design of the first pipeline 10 and the second pipeline 20 is adopted to realize the air inlet of two paths of gases, and the two pipelines are coaxially arranged. The first type of gas flows in the first channel outside the second duct 20 and the second type of gas flows in the channel between the second duct 20 and the first duct 10. The flow structure 30 is disposed on the second conduit 20, and two types of gases pass through the flow structure 30 and then enter the gas inlet of the reaction chamber 40 in the second conduit 20 or the first conduit 10. Specifically, one end of one of the second conduit 20 or the first conduit 10 is connected to the gas inlet of the reaction chamber 40, and the gas in the other conduit flows into the conduit connected to the gas inlet of the reaction chamber 40 through the flow structure 30 adjacent to the gas inlet of the reaction chamber 40, and both types of gas enter the gas inlet of the reaction chamber 40 together. The device is used for carrying out non-premixed air inlet on two types of gases so as to avoid generating particulate matters. The two paths of gas enter the reaction cavity from the same air inlet of the reaction cavity, so that central symmetry air intake is realized, and the distribution quantity of the two paths of gas entering the reaction cavity is uniform. Therefore, even air intake of multiple paths of gases can be realized under the condition that multiple gases are not premixed.

It will be appreciated that only two gas charges are shown schematically in figures 1 and 2. When more than two paths of gas are supplied, more pipelines can be nested in the pipelines, so that more different gases can be uniformly supplied.

In some embodiments, the first conduit 10 may be provided with a first Gas inlet at the end of the first channel remote from the flow structure 30 for connection to a first Gas source Gas 1 for supplying a first type of Gas, and/or the second conduit 20 may be provided with a second Gas inlet at the end of the second channel remote from the Gas inlet of the reaction chamber 40 for connection to a second Gas source Gas 2 for supplying a second type of Gas.

The first Gas inlet may be provided at an end of the first channel remote from the flow structure 30 for connection to a first Gas source Gas 1 for supplying a first type of Gas. The first gas inlet may also be provided in the pipe wall at the end of the first channel remote from the flow structure 30, so that the first type of gas flows along the start of the first channel towards the end of the first channel. In the case shown in fig. 1, the first air inlet may also be provided close to the flow-through structure 30, which may reduce the flow path length.

A second Gas inlet may be provided at the end of the second channel remote from the Gas inlet of the reaction chamber 40 for connection to a second Gas source Gas 2 for supplying a second type of Gas. The second inlet may also be provided in the wall of the tube at the end of the inlet adjacent the second channel remote from the reaction chamber 40 so that the second type of gas flows along the beginning of the second channel towards the end of the second channel.

In some embodiments, one end of the first channel and the second channel, which is in communication with the gas inlet of the reaction chamber 40, may be provided with a showerhead 50, and the showerhead 50 has a plurality of second gas channels 51 axially disposed around the first pipe 10 and oriented at a second predetermined angle with respect to the first pipe 10, and the gases flowing in the first channel and the second channel enter the reaction chamber 40 together via the second gas channels 51 in a direction at the second predetermined angle with respect to the first pipe 10.

Specifically, one of the first and second passages, which communicates with the gas inlet of the reaction chamber 40, may be provided with a gas at its end through the showerhead 50 into the reaction chamber 40. The showerhead 50 has a plurality of second gas passages 51 disposed around the axial direction of the first pipe 10 with the opening of each passage facing in a direction forming a second predetermined angle with the axial direction of the first pipe 10.

The gas in the first and second channels passes through the second gas channel 51 when the gas enters the gas inlet of the reaction chamber 40 together. Because the direction of the channels and the axial direction of the first pipeline 10 have a second preset angle, two paths of gases can enter the reaction cavity 40 along the specific angle, which is beneficial to realizing more uniform gas distribution in the reaction cavity and improving the reaction efficiency. Finally, the two paths of gases are uniformly sprayed to the area of the substrate 42 through the gas spray head 43, so as to complete the required reaction process.

In practical situations, the showerhead 50 may be in a hollow truncated cone shape, the showerhead 50 is coaxial with the first conduit 10, the smaller cross-section end of the showerhead 50 faces the inside of the reaction chamber 40, and the second gas passages 51 are provided on the side of the showerhead 50.

Showerhead 50 may be positioned at a top center of reaction chamber 40. The end of the showerhead 50 having a larger cross section may be connected to the end of the first pipe 10 or the second pipe 20, that is, the showerhead 50 may introduce gas from the first pipe 10 or the second pipe 20 and supply the gas to the reaction chamber 40 through its hollow structure. The gas distribution and concentration during the reaction is controlled by the showerhead 50 to meet specific process requirements.

Alternatively, spray head 50 may be configured in a cylindrical, prismatic, or other shape.

In some embodiments, the smaller cross-section end surface of the showerhead 50 may also be uniformly provided with a plurality of third gas passages toward the gas showerhead 43.

In the case where the area of the bottom of the showerhead 50 is large, gas passages may be provided at the same time at the bottom for gas flow. I.e. the end face of the smaller cross section of the showerhead 50 may also be uniformly provided with a plurality of third gas passages toward the support structure 41 within the reaction chamber 40.

That is, a gas partially reaching the end of the first channel or the second channel may enter the reaction chamber 40 in a preset direction through the third gas channel 33.

The preset direction may be a direction forming more than 0 ° and less than 180 ° with the axis of the first pipe 10, for example, may be an axial direction of the first pipe 10, which is not particularly limited by the present disclosure.

In some embodiments, the first gas channel 31 may be offset from the second gas channel 51 in a direction axially forming a second predetermined angle with the second conduit 20.

The offset arrangement may provide a staggered arrangement of the first gas passages 31 and the second gas passages 51 in space such that the axes of the first gas passages 31 and the second gas passages 51 are offset from each other in some areas, rather than in a straight line. The staggered arrangement can optimize the mixing function of multiple types of gases in the air inlet device.

In some embodiments, the first preset angle and the second preset angle may be different in angle magnitude.

Different orifice angles can affect the spray range, velocity, and distribution of the gas. That is, the angle of the first gas channel 31 in the flow structure 30 is different from the angle of the second gas channel 51 in the showerhead 50, so that the mixing effect of the gases can be adjusted and optimized, the gas intake in the reaction chamber 40 is ensured to be uniform and the desired reaction conditions are achieved.

In some embodiments, the plurality of first gas passages 31 are distributed on a plurality of planes perpendicular to the axis of the first duct 10, the first gas passages 31 located on adjacent two planes being disposed equidistantly in the axial direction of the first duct 10, and/or the plurality of second gas passages 51 are distributed on a plurality of planes perpendicular to the axis of the first duct 10, the second gas passages 51 located on adjacent two planes being disposed equidistantly in the axial direction of the first duct 10.

The first gas channels 31 are uniformly distributed in the axial direction of the second pipeline 20 at equal intervals, so that one type of gas in the first channel or the second channel can be equally divided into a plurality of gas flows, and the gas flows uniformly enter the other channel and are mixed with the other type of gas, thereby improving the efficiency and the controllability of the reaction.

The second gas channels 51 are equally arranged in the axial direction of the second pipe 20, so that two kinds of gases can enter the reaction cavity 40 in a wider gas inlet range, and simultaneously enter the reaction cavity 40 in a central symmetry mode for reaction.

It should be noted that the number of distribution layers of the gas channel in the axial direction of the pipe may be designed according to the desired gas inlet range.

Meanwhile, the channel orientations of the second gas channels 51 located on different planes may be designed to be different or identical. As shown in fig. 1, the second gas passage 51 may have three layers in the axial direction of the second duct 20, i.e., be distributed in three different planes. The gas flowing out of the second gas passage 51 located on a different plane may enter the gas shower head 43 in a direction forming a different angle with the axial direction of the second duct 20. At the same time, gas also flows out toward the gas shower head 43 from the bottom of the shower head 50. By increasing or decreasing the number of distribution layers of the gas channels, the distribution and flow of the gas can be optimized, thereby improving the uniformity and efficiency of the intake of multiple types of gases.

In some embodiments, the first channel may be configured to be straight or may be configured to be curved.

As shown in fig. 1 and 2, the first channel may be designed to extend straight. The gas may flow in a straight path in the conduit and eventually enter the reaction chamber 40 chamber in a parallel direction with the top gas inlet of the reaction chamber 40 facing. Providing a straight extending channel may be suitable for introducing gas at the proximal end of reaction chamber 40, which may facilitate reducing the flow path of gas into reaction chamber 40.

Fig. 1 shows one embodiment in which the first channel is arranged flat and the end of the second channel is located in the first channel, and the flow-through structure 30 is arranged at the end of the second channel. In this case, the first type gas enters the first passage from the wall of the first pipe 10, and flows in the direction of the dotted arrow in fig. 1. The second type of gas enters the second channel from the end of the second conduit 20 remote from the inlet of the reaction chamber 40, flows in the direction of the solid arrow in fig. 1, and then enters the first channel through the flow-through structure 30 and enters the showerhead 50 together with the first type of gas.

In one embodiment, as shown in FIG. 2, the first channel is arranged in a straight shape, and the end of the second channel is located outside the first channel, and the flow-through structure 30 is arranged at a position of the second channel away from the gas inlet of the reaction chamber 40. At this time, the second type gas enters the second passage from the end of the second pipe 20 remote from the gas inlet of the reaction chamber 40, and flows in the direction of the solid arrow in fig. 2. The first type of gas enters the first channel from the wall of the first conduit 10 and flows in the direction of the dashed arrow in fig. 2. The first type of gas enters the second channel through the flow-through structure 30 and then enters the showerhead 50 along the solid arrow with the second type of gas.

In practice, the first channel may also be provided in a bent shape. Fig. 3 shows the structure of the air inlet device when the first passage is bent, and the first type of gas flows through the first, second and third sections of the first duct 10 in sequence. The second duct 20 is also bent, and the second type gas is merged with the first type gas after flowing in the second duct 20 in a bent path. By making the first conduit 10 appear as two bends, the gas inlet means can be made compact and gas can be introduced at the distal end of the reaction chamber 40. The layout of the pipeline system can be simplified, the occupied area of the air inlet device is reduced, and air source connection is convenient for operators, so that the actual process requirements are better met.

In some embodiments, a plate-like structure 11 surrounding the second duct 20 and located on the intake path of the first duct is provided in the first duct, the plate-like structure 11 extending from the outer side of the wall of the second duct 20 to the inner side of the wall of the first duct 10, with a space between the plate-like structure 11 and the inner side of the wall of the first duct 10.

As shown in fig. 1 and 2, the plate-like structure 11 may allow the first type of gas to diffuse at the end of the first channel adjacent the first gas inlet. Specifically, the first type gas may continue to enter the first channel through the space between the plate-like structure 11 and the inner cavity wall of the first duct 10 after diffusing at the end portion of the first channel adjacent to the first gas inlet, so that the uniformity of the first type gas flowing in the first channel may be improved.

In addition, in fig. 2, when the first air inlet is provided at a position close to the flow-through structure 30, the use of the plate-like structure may be abandoned.

In the case of the first channel being bent as shown in fig. 3, the case that the gas is not uniformly diffused and directly enters the chamber of the reaction chamber 40 after the multi-path gas is introduced is not easy to occur due to the longer length of the pipeline. Therefore, whether the baffle is arranged or not and how to design the shape and the layout of the first channel can be flexibly selected according to actual conditions and process requirements.

Some embodiments of the present application also provide a semiconductor processing apparatus including a reaction chamber 40 having an air inlet and the air inlet device described above, an end of one of the first channel and the second channel of the air inlet device being in communication with the air inlet of the reaction chamber 40.

The reaction chamber 40 is provided with a carrying structure 41 and a lifting structure 44, and the substrate 42 is placed on the carrying structure 41 and is height-adjusted by the lifting structure 44. When different gases enter the gas inlet of the reaction chamber 40 through the gas inlet device, the gases can reach the reaction chamber 40 in a central symmetry mode, finally reach the region of the substrate 42 and participate in the reaction. Fig. 4 is a schematic view showing a structure of a semiconductor processing apparatus using the air inlet device shown in fig. 3.

The air inlet device can be applied to semiconductor processing equipment for carrying out processes such as plasma film deposition, plasma etching, plasma photoresist removal and the like.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application.

Claims (12)

1. An air inlet device for introducing a process gas into a reaction chamber, comprising:

a first pipe having a first passage through which a first type of gas flows;

A second pipe which enters the first passage along the axial direction of the first pipe and extends coaxially in the first passage, wherein the second pipe is provided with a second passage for the second type of gas to circulate, and the tail end of the second passage is arranged adjacent to the end part of the first passage;

The circulating structure is arranged on the second pipeline and positioned in the first channel, the circulating structure is provided with a plurality of first gas channels which are uniformly arranged around the second pipeline in the axial direction and face to form a first preset angle with the second pipeline in the axial direction, the end part of one of the first channels and the second channels is used for communicating with the gas inlet of the reaction cavity, the gas circulating in the other one enters one communicating with the gas inlet of the reaction cavity along the direction forming the first preset angle with the second pipeline through the circulating structure, so that the gas circulating in the two gas channels jointly enter the gas inlet of the reaction cavity, and the circulating structure is arranged adjacent to the gas inlet of the reaction cavity on the gas flowing path;

The end of one of the first channel and the second channel, which is communicated with the air inlet of the reaction cavity, is provided with a spray head, the spray head is provided with a plurality of second gas channels which are axially arranged around the first pipeline and face to form a second preset angle with the first pipeline, and the gas flowing in the first channel and the second channel jointly enters the reaction cavity along the direction forming the second preset angle with the first pipeline through the second gas channels.

2. An air inlet arrangement according to claim 1, characterized in that the first conduit is provided with a first air inlet at the end of the first channel remote from the flow-through structure for connection to a first air source supplying a first kind of gas, and/or

The second pipeline is provided with a second air inlet which is positioned at the end part of the second channel away from the air inlet of the reaction cavity, and the second air inlet is used for being connected with a second air source for supplying second-class gases.

3. An air inlet device according to claim 1, wherein the nozzle is in the shape of a hollow truncated cone, the nozzle is coaxial with the first pipe, the smaller end of the nozzle is toward the inside of the reaction chamber, and the second gas passage is arranged on the side surface of the nozzle.

4. A gas inlet device according to claim 3, wherein the end face of the smaller end of the nozzle is also uniformly provided with a plurality of third gas passages facing the gas shower head.

5. A gas inlet device according to claim 3, wherein the first gas passage is offset from the second gas passage in a direction axially forming the second predetermined angle with the second conduit.

6. An air inlet device according to claim 3, wherein the first predetermined angle is different from the second predetermined angle in angle.

7. An air inlet device according to claim 3, wherein a plurality of the first air passages are distributed on a plurality of planes perpendicular to the axis of the first duct, the first air passages located on adjacent two planes are equidistantly arranged in the axial direction of the first duct, and/or

The second gas channels are distributed on a plurality of planes perpendicular to the axis of the first pipeline, and the second gas channels on two adjacent planes are equidistantly arranged in the axis direction of the first pipeline.

8. An air intake device according to claim 1, wherein the first passage is provided in a straight shape or in a bent shape.

9. An air inlet device according to claim 8, wherein the first channel is arranged in a straight shape, the end of the second channel is located in the first channel, and the flow-through structure is arranged at the end of the second channel.

10. An air inlet device according to claim 8, wherein the first channel is arranged in a straight shape, the end of the second channel is located outside the first channel, and the flow structure is arranged at a position of the second channel away from the air inlet of the reaction chamber.

11. An air inlet device according to claim 1, characterized in that a plate-like structure surrounding the second duct and located in the air inlet path of the first duct is provided in the first duct, which plate-like structure extends from the outer side of the wall of the second duct to the inner side of the wall of the first duct, which plate-like structure is spaced from the inner side of the wall of the first duct.

12. A semiconductor processing apparatus comprising a reaction chamber having an air inlet, further comprising the air inlet device of any one of claims 1 to 11, an end of one of the first channel and the second channel of the air inlet device being in communication with the air inlet of the reaction chamber.