CN118431075B - Method for manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

The present application provides a method for preparing a semiconductor device and a semiconductor device. The method comprises: providing a semiconductor substrate structure and a metal film structure; heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature; bonding a portion of the surface of the semiconductor substrate structure to a portion of the surface of the metal film structure; fixing the bonding state of the semiconductor substrate structure and the metal film structure. The method is used to prepare a semiconductor device, which can reduce the difficulty of preparing a metal film in a semiconductor device, shorten the preparation time, improve the preparation efficiency, improve the uniformity and preparation purity of the metal film layer, and thus improve the yield rate of the semiconductor device.

Description

Semiconductor device manufacturing method and semiconductor device

Technical Field

The present application relates to the technical field of semiconductor devices, and in particular to a method for preparing a semiconductor device and a semiconductor device.

Background Art

With the development and progress of semiconductor device manufacturing technology, the requirements for semiconductor device capacity are gradually increasing. In practical applications, large-capacity semiconductor devices usually need to carry higher currents. In order to reduce resistance and current density, the electrode thickness of the semiconductor device is usually increased.

However, in the existing semiconductor device preparation methods, metal films are usually grown on the surface of semiconductor devices by evaporation, magnetron sputtering and electroplating. However, when growing thicker metal film layers, the existing preparation methods take a long time, the uniformity of the film is difficult to ensure, and the target material needs to be replaced during the preparation process, which affects the preparation efficiency of the device.

Summary of the invention

Based on this, the embodiments of the present application provide a method for preparing a semiconductor device and a semiconductor device, which can reduce the difficulty of preparing a metal film in a semiconductor device, shorten the preparation time, improve the preparation efficiency, improve the uniformity and preparation purity of the metal film layer, and thereby improve the yield rate of the semiconductor device.

According to a first aspect of an embodiment of the present application, a method for preparing a semiconductor device is provided, comprising:

Providing a semiconductor substrate structure and a metal film structure;

heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature;

Aligning a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure;

The bonding state between the semiconductor substrate structure and the metal film structure is fixed.

In one embodiment, heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature comprises:

The semiconductor substrate structure is heated to the bonding temperature so that the metal film structure reaches a ductile state at the bonding temperature.

In one embodiment, the bonding temperature is related to the melting point of the metal film structure and the softening temperature of the metal film structure.

In one embodiment, before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes:

The semiconductor substrate structure and the metal film structure are placed in a vacuum environment.

In one embodiment, providing a semiconductor substrate structure and a metal film structure includes:

Providing a semiconductor substrate and a metal film layer;

Etching the semiconductor substrate to obtain the semiconductor substrate structure;

forming alignment marks on the surfaces of the semiconductor substrate structure and the metal film layer;

Performing a patterning process on the metal film layer to obtain the metal film structure;

The step of laminating a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure comprises:

The semiconductor substrate structure and the metal film structure are aligned and arranged according to the alignment mark.

In one embodiment, the method for preparing the semiconductor device further includes:

Cleaning the surface of the metal film structure after bonding;

The cleaned metal film structure is patterned.

In one embodiment, before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes:

The semiconductor substrate structure and the metal film structure are surface cleaned.

In one embodiment, the method for preparing the semiconductor device further includes:

Cleaning the surface of the bonded semiconductor device;

The cleaned semiconductor device is annealed.

In one embodiment, fixing the bonding state between the semiconductor substrate structure and the metal film structure includes:

Cooling the bonded semiconductor substrate structure and the metal film structure; and/or,

Applying pressure to the bonded semiconductor substrate structure and the metal film structure.

According to a second aspect of an embodiment of the present application, a semiconductor device is provided, which is manufactured using the method for manufacturing a semiconductor device as described in any one of the first aspects above.

In one embodiment, the metal film structure of the semiconductor device includes a single metal film layer; or,

The metal film structure of the semiconductor device includes multiple metal film layers;

Wherein, the metal film layer includes a patterned metal structure.

The method for preparing a semiconductor device provided in an embodiment of the present application can improve the uniformity and preparation purity of the metal film structure by pre-forming a semiconductor substrate structure and a metal film structure, and can make the metal film structure reach a ductile state by heating the semiconductor substrate structure and the metal film structure, so that the metal film structure can be bonded to the semiconductor substrate structure, thereby forming a semiconductor device with a metal film layer by fixing the bonding state of the two. Therefore, the above method can reduce the difficulty of preparing the metal film in the semiconductor device, shorten the preparation time, improve the preparation efficiency, improve the uniformity and preparation purity of the metal film layer, thereby improving the resistive parasitic parameters of the semiconductor device, improving the reliability and stability of the semiconductor device, and further improving the yield rate of the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

FIG1 is a schematic flow chart of a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG2 is a schematic flow chart of the steps of providing a semiconductor substrate structure and a metal film structure in a method for preparing a semiconductor device provided in an embodiment of the present application;

3 is a schematic structural diagram of a semiconductor substrate structure having an alignment mark formed thereon obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG4 is a schematic structural diagram of a metal film layer formed with an alignment mark obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG5 is a schematic structural diagram of a metal film structure having an alignment mark formed thereon obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG6 is a schematic top view of a semiconductor device in a bonded state obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG7 is a schematic structural diagram of a semiconductor device obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

8 is a schematic structural diagram of a semiconductor substrate structure and a metal film structure provided by a method for preparing a semiconductor device provided in an embodiment of the present application;

9 is a schematic structural diagram of a semiconductor substrate structure and a metal film structure in a bonded state provided by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG10 is a schematic structural diagram of a structure obtained by disposing a photoresist on the surface of a metal film structure in a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG11 is a schematic structural diagram of a patterned metal film structure obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG12 is a schematic structural diagram of an alloy structure obtained by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG13 is a schematic structural diagram of a semiconductor substrate structure and a metal film layer provided by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG14 is a schematic structural diagram of a metal thin film structure obtained by patterning a metal film layer in a method for preparing a semiconductor device provided in an embodiment of the present application;

15 is a schematic structural diagram of a semiconductor substrate structure and a metal film structure in another bonding state provided by a method for preparing a semiconductor device provided in an embodiment of the present application;

FIG. 16 is a schematic structural diagram of a semiconductor device provided in an embodiment of the present application.

Description of reference numerals:

100 - semiconductor substrate structure, 101 - first alignment mark, 102 - second alignment mark, 110 - step structure, 200 - metal film structure, 201 - metal film layer, 202 - patterned metal film structure, 300 - alloy structure, 400 - photoresist.

DETAILED DESCRIPTION

In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and/or parts, these elements, components, regions, layers, doping types and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

When used herein, the singular forms "a", "an" and "/the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include/comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and/or" includes any and all combinations of the relevant listed items.

It should be noted that in the existing methods for preparing semiconductor devices, metal films are usually grown on the surface of semiconductor devices by methods such as evaporation, magnetron sputtering and electroplating. However, when growing thicker metal film layers, the existing preparation methods take a long time, the uniformity of the film is difficult to ensure, and the target material needs to be replaced during the preparation process, which affects the preparation efficiency of the device. In addition, the metal film is easily oxidized during the growth process, and the long growth process will further affect the film quality, and may even cause the semiconductor device to fail, affecting the yield rate of the semiconductor device.

FIG1 is a schematic flow chart of a method for preparing a semiconductor device provided in an embodiment of the present application. As shown in FIG1 , in a first aspect of an embodiment of the present application, a method for preparing a semiconductor device is provided, comprising:

Step S110, providing a semiconductor substrate structure and a metal film structure.

Exemplarily, the material of the semiconductor substrate structure may include silicon, silicon nitride, gallium compounds, etc. The size of the semiconductor substrate structure may be two inches, four inches, six inches, eight inches, etc. The material of the metal film structure may include a metal material with good electrical conductivity, such as gold, silver, copper, aluminum, etc. The thickness of the metal film structure may range from 0.5 μm to 50 μm, the percentage of thickness uniformity may range from 0 to 5%, and the metal purity may be greater than 99.99%.

For example, the semiconductor substrate structure and the metal film structure may be surface treated by wet etching, ultrasonic cleaning, decontamination, surface planarization, mechanical chemical grinding, polishing, and the like.

In step S120 , at least one of the semiconductor substrate structure and the metal film structure is heated to a bonding temperature.

Exemplarily, the semiconductor substrate structure and the metal film structure may be heated simultaneously to shorten the heating time and improve the manufacturing efficiency of the semiconductor device.

Step S130 , bonding a portion of the surface of the semiconductor substrate structure to a portion of the surface of the metal film structure.

For example, the surface bonding between the semiconductor substrate structure and the metal film structure can be achieved by adsorption methods such as electrostatic adsorption and strong magnetic adsorption.

Step S140, fixing the bonding state between the semiconductor substrate structure and the metal film structure.

Exemplarily, after being fixed in the bonding state, the metal film structure can be patterned to form a metal electrode. The surface of the metal film structure away from the semiconductor substrate structure can be coated with photoresist, and then the photoresist is exposed and developed to achieve the patterning of the photoresist. The metal film structure can be patterned by electron beam exposure, etching, ion beam cutting, laser etching and other processes to form a pattern of the corresponding metal film structure according to the patterned photoresist. After the patterning of the metal film structure is completed, the semiconductor device can be cleaned to remove the excess products formed during the patterning process and remove the photoresist residue.

The method for preparing a semiconductor device provided in an embodiment of the present application can improve the uniformity and preparation purity of the metal film structure by pre-forming a semiconductor substrate structure and a metal film structure, and can make the metal film structure reach a ductile state by heating the semiconductor substrate structure and the metal film structure, so that the metal film structure can be bonded to the semiconductor substrate structure, thereby forming a semiconductor device with a metal film layer by fixing the bonding state of the two. Therefore, the above method can reduce the difficulty of preparing the metal film in the semiconductor device, shorten the preparation time, improve the preparation efficiency, improve the uniformity and preparation purity of the metal film layer, thereby improving the resistive parasitic parameters of the semiconductor device, improving the reliability and stability of the semiconductor device, and further improving the yield rate of the semiconductor device.

In some feasible embodiments, heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature includes: heating the semiconductor substrate structure to the bonding temperature so that the metal film structure reaches a ductile state at the bonding temperature.

It should be noted that the ductile state of the metal film structure refers to the state in which the metal film can be extended in a direction parallel to the extended surface of the metal film after the metal is heated. The metal film can be uniformly extended by applying a force perpendicular to the surface of the metal film, or the metal film can be thermally expanded by simply heating the metal film.

It should be noted that the heated metal film structure has a certain ductility. However, if the metal film structure is directly heated, the heated metal film structure is prone to wrinkles. At the same time, in the process of transferring the metal film structure, the heated metal film structure may further form wrinkles or partially adhere. In addition, in the stage of fixing the bonding state, cooling or pressurizing the metal film structure may cause further deformation of the metal film structure. For example, the metal film structure may expand and contract due to heat, or further extend after pressurization, which will cause the surface uniformity and preparation thickness of the metal film structure to deviate from the actual situation, affecting the yield rate of semiconductor devices.

It should be noted that the melting point of semiconductor materials is usually higher than that of metal materials. Therefore, when the semiconductor material is heated to the bonding temperature, the semiconductor material will not deform.

For example, when the metal film structure is an aluminum structure, the lamination temperature may range from 200° C. to 400° C., for example, 200° C., 300° C., and 400° C., etc.

Exemplarily, the metal film structure can be heated to a preset temperature, wherein the preset temperature is lower than the bonding temperature, and the metal film structure will not reach a ductile state under the preset structure. By preheating the metal film structure, wrinkles or adhesions of the metal film structure can be avoided before the bonding step when the metal film structure is not stretched, and the amount of heat absorbed by the metal film structure for bonding can be reduced, and the time required for the bonding step can be further shortened, thereby improving the manufacturing efficiency of the semiconductor device manufacturing method.

For example, when the metal film structure and the semiconductor substrate structure have poor bonding, such as wrinkles, adhesion, or bonding gaps, the bonding effect of the semiconductor device can be improved by applying pressure to one of the metal film structure and the semiconductor substrate structure, or the poor position can be removed after the bonding state is fixed.

The method for preparing a semiconductor device provided in an embodiment of the present application, by heating the semiconductor substrate structure, can transfer heat to the metal film structure through the semiconductor substrate structure while the semiconductor substrate structure is in contact with the metal film structure while maintaining the surface morphology of the semiconductor substrate structure, so that the surface of the metal film structure close to the semiconductor substrate structure reaches a ductile state, and then the metal film structure can be directly bonded to the semiconductor substrate structure according to the positional relationship between the metal film structure and the semiconductor substrate structure, so as to facilitate the positioning and alignment of the metal film structure and the semiconductor substrate structure, and improve the stability and bonding accuracy during the bonding process, and avoid large-scale grinding of the semiconductor device after the fixing is completed, so as to reduce the loss during the preparation process. In addition, wrinkles or adhesion of the metal film structure after heating can be avoided, gaps between the semiconductor substrate structure and the metal film structure can be avoided during the bonding process, and further deformation of the metal film structure can be avoided during the fixing process, so the reliability and stability of the semiconductor device can be improved, the surface morphology of the semiconductor device can be improved, and the yield rate of the semiconductor device can be improved.

In some feasible implementations, the bonding temperature is related to the melting point of the metal film structure and the softening temperature of the metal film structure.

Exemplarily, the bonding temperature is also related to the material of the semiconductor substrate structure, the material of the metal film structure, the bonding strength required for bonding the semiconductor substrate structure and the metal film structure, and the preparation requirements of the semiconductor device.

Exemplarily, the bonding temperature may be between the melting point and the softening temperature of the metal film structure.

The semiconductor device preparation method provided in the embodiment of the present application determines the bonding temperature by using the melting point and softening temperature of the metal film structure, so that the metal film structure can reach a ductile state, and at the same time, it can avoid the melting of the metal film structure and the re-cooling of the film, which leads to too low surface morphology quality. Therefore, the surface morphology of the semiconductor device can be improved, the bonding quality between the metal film structure and the semiconductor substrate structure can be improved, the time required for the heating stage and the fixing stage can be shortened, and the preparation efficiency and yield rate of the semiconductor device can be improved.

In some feasible implementations, before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes: placing the semiconductor substrate structure and the metal film structure in a vacuum environment.

For example, the desired semiconductor substrate structure may be placed on a vacuum adsorption platform, and the environment may be evacuated to a vacuum state by a vacuum pump, wherein the air pressure in the vacuum environment is lower than 10 ^-5 Pa.

The method for preparing a semiconductor device provided in the embodiment of the present application can improve the adsorption force between the semiconductor substrate structure and the metal film structure by completing the preparation process of heating, bonding and fixing in a vacuum environment, thereby utilizing the environmental pressure of the vacuum environment to improve the stability of the semiconductor substrate structure and the metal film structure during the bonding process, and avoid relative displacement between the two during the bonding process, which affects the bonding effect. At the same time, the vacuum environment can further prevent other gases or external water vapor from reacting with the semiconductor substrate structure and the metal film structure under high temperature conditions, thereby improving the purity of the semiconductor substrate structure and the metal film structure, and improving the preparation quality and yield rate of semiconductor devices.

FIG2 is a schematic flow chart of the steps of providing a semiconductor substrate structure and a metal film structure in a method for preparing a semiconductor device provided in an embodiment of the present application. As shown in FIG2, in some feasible implementations, providing a semiconductor substrate structure and a metal film structure includes:

Step S210, providing a semiconductor substrate and a metal film layer.

For example, for a semiconductor substrate structure with a certain special structure or non-planar structure formed on the surface, it is usually necessary to etch a semiconductor substrate with a certain thickness to obtain it. In order to improve the bonding effect between the semiconductor substrate structure and the metal film structure, and to meet the preparation requirements, the surface morphology of the bonding surface of the metal film structure is usually formed according to the surface morphology of the bonding surface of the semiconductor substrate structure, so the metal film layer can be etched to obtain the metal film structure. The thickness of the semiconductor substrate is usually greater than or equal to the maximum thickness of the semiconductor substrate structure, and the thickness of the metal film layer is usually greater than or equal to the maximum thickness of the metal film structure.

Step S220: etching the semiconductor substrate to obtain a semiconductor substrate structure.

As shown in FIG. 3 , the semiconductor substrate structure 100 has a stepped structure 110 .

For example, the semiconductor substrate may be etched by dry etching, wet etching or other etching processes to form a semiconductor substrate structure that meets the size requirements of the semiconductor device.

In step S230 , alignment marks are formed on the surfaces of the semiconductor substrate structure and the metal film layer.

As shown in FIG. 3 and FIG. 4 , a first alignment mark 101 is formed on the surface of the semiconductor substrate structure 100 , and a second alignment mark 102 is formed on the surface of the metal film layer 201 . The first alignment mark 101 corresponds to the second alignment mark 102 one by one.

For example, alignment marks may be formed on the bonding surfaces of the semiconductor substrate structure and the metal film structure respectively by laser marking, ion beam etching or other processes.

Step S240, performing patterning on the metal film layer to obtain a metal thin film structure.

As shown in FIG. 5 , the metal film layer 201 is patterned to form a metal film structure 200 corresponding to the step structure 110 .

For example, the metal film layer can be patterned by laser cutting, dry etching, wet etching and other processes, and the edge of the patterned metal film structure can be polished and cleaned to avoid introducing new impurities during the heating and bonding stages.

As shown in FIG. 6 , the partial surface of the semiconductor substrate structure is bonded to the partial surface of the metal film structure, including: aligning the semiconductor substrate structure and the metal film structure according to the alignment mark.

Exemplarily, the position and direction of the semiconductor substrate structure and the metal film structure can be adjusted according to the correspondence between the alignment marks located on different surfaces until the alignment marks completely correspond to each other, and then the metal film structure is disposed on the surface of the semiconductor substrate structure.

For example, when one of the semiconductor substrate structure and the metal film structure has a patterning requirement, an alignment mark can be set first, and then the patterning process is performed according to the alignment mark. When neither the semiconductor substrate structure nor the metal film structure has a patterning requirement, an alignment mark can be set first, and the positional relationship between the two can be set according to the alignment mark to maximize the bonding area, improve the bonding accuracy, reduce the polishing requirement of the finished product, and reduce the production loss.

Fig. 7 is a schematic structural diagram of a semiconductor device obtained by a method for preparing a semiconductor device provided in an embodiment of the present application. As shown in Fig. 7 , the semiconductor device includes a semiconductor substrate structure 100 and a metal film structure 200 .

The method for preparing a semiconductor device provided in an embodiment of the present application, when the preparation requirements of the semiconductor device have requirements on the shape and setting position of the semiconductor substrate structure 100 and the metal film structure 200, can reduce the difficulty of bonding and improve the accuracy of the bonding position by first setting an alignment mark and then aligning the semiconductor substrate structure 100 and the metal film structure 200 after patterning, thereby improving the preparation quality of the semiconductor device.

In some feasible implementations, the method for preparing a semiconductor device further includes: performing surface cleaning on the bonded metal film structure; and performing patterning on the cleaned metal film structure.

For example, the cleaned metal film structure may be punched to obtain metal through-holes for realizing metal interconnection of semiconductor devices.

The method for preparing a semiconductor device provided in the embodiment of the present application can increase the application scenarios of the semiconductor device by performing surface cleaning and patterning on the bonded metal film structure, thereby improving the practicality of the semiconductor device.

In some feasible implementations, before the step of heating at least one of the semiconductor substrate structure and the metal film structure to the bonding temperature, the method further includes: cleaning the surface of the semiconductor substrate structure and the metal film structure.

For example, the semiconductor substrate structure 100 and the metal film structure 200 may be surface treated by wet etching, ultrasonic cleaning, decontamination, chemical mechanical polishing, or the like.

The method for preparing a semiconductor device provided in the embodiment of the present application can remove oxides on the surface of the semiconductor substrate structure and the metal film structure, as well as residues of other materials in the previous preparation process, such as photoresist, by cleaning the surface of the semiconductor substrate structure and the metal film structure before the heating process. The purity of the bonding surface can be improved, the adhesion ability of the bonding surface can be improved, the bonding effect between the semiconductor substrate structure and the metal film structure can be enhanced, cracking can be avoided, and the reliability of the semiconductor device can be improved. The contact quality between the semiconductor substrate structure and the metal film structure can also be enhanced, the parasitic resistance of the bonding surface can be reduced, the electrical performance of the semiconductor device can be improved, and the yield rate of the semiconductor device can be improved.

In some feasible implementations, the method for preparing a semiconductor device further includes: performing surface cleaning on the bonded semiconductor device; and performing annealing on the cleaned semiconductor device.

Referring to FIG. 7 , the cleaned metal film structure may be annealed to obtain an alloy structure 300 .

The method for preparing a semiconductor device provided in an embodiment of the present application can eliminate the pressure generated during the bonding process by annealing the bonded semiconductor device, and form an alloy on the bonding surface at the annealing location to achieve ohmic contact, reduce the parasitic resistance of the bonding surface, improve the electrical performance of the semiconductor device, and increase the yield rate of the semiconductor device.

In some feasible implementations, fixing the bonding state of the semiconductor substrate structure and the metal film structure includes: cooling the bonded semiconductor substrate structure and the metal film structure.

For example, the cooling of the bonding can be achieved by natural cooling or lowering the ambient temperature. When lowering the ambient temperature, it is necessary to consider the effect of temperature on the brittleness of the semiconductor substrate structure 100 and the metal film structure 200 to avoid disconnection of the semiconductor substrate structure 100 and the metal film structure 200 during the cooling process, which affects the yield rate of the semiconductor device. It is also necessary to consider the thermal expansion and contraction characteristics of the metal film structure 200 to avoid deformation of the metal film structure 200 again due to excessively low temperature, which affects the yield rate of the semiconductor device.

The method for preparing a semiconductor device provided in an embodiment of the present application fixes the bonding state by cooling, which can reduce the risk of relative displacement between the semiconductor substrate structure 100 and the metal film structure 200 during the fixing process, and will not affect the surface morphology of the semiconductor substrate structure 100 and the metal film structure 200. It can increase the bonding area and increase the preparation efficiency. At the same time, it can save fixing costs, shorten fixing time, reduce fixing difficulty, and improve the yield and good rate of semiconductor devices.

In some feasible implementations, fixing the bonding state of the semiconductor substrate structure and the metal film structure includes: applying pressure to the bonded semiconductor substrate structure and the metal film structure.

Exemplarily, the fitting fixation can be achieved by changing the environmental pressure in the fixing chamber, or by using a pressing machine or the like.

The method for preparing a semiconductor device provided in an embodiment of the present application can fix the bonding state by applying pressure, thereby further expelling bubbles between the bonding surfaces of the semiconductor substrate structure 100 and the metal film structure 200, improving the bonding quality, and improving the surface flatness of the semiconductor device, thereby improving the yield rate of the semiconductor device.

Exemplarily, a semiconductor substrate structure 100 and a metal film structure 200 as shown in FIG8 are provided, and the semiconductor substrate structure 100 and the metal film structure 200 can be subjected to surface cleaning treatment to improve the surface bonding ability of the semiconductor substrate structure 100 and the metal film structure 200. The metal film structure 200 can be heated to a higher bonding temperature to bond the semiconductor substrate structure 100 and the metal film structure 200 to each other. The bonding state of the semiconductor substrate structure 100 and the metal film structure 200 can be fixed by natural cooling or applying external pressure to obtain a structure as shown in FIG9. The metal film structure 200 can be patterned by forming a photoresist 400 on the side of the metal film structure 200 away from the semiconductor substrate structure 100 to obtain a structure as shown in FIG10, so as to obtain a patterned metal film structure 202 as shown in FIG11. The patterned semiconductor device can be annealed to form an alloy structure 300 as shown in FIG12 at the bonding position.

Exemplarily, a semiconductor substrate structure 100 and a metal film layer 201 with a step structure 110 as shown in FIG13 are provided. According to the step structure 110, the metal film layer 201 is patterned to obtain a metal film structure 200 as shown in FIG14. The semiconductor substrate structure 100 and the metal film structure 200 are surface cleaned to improve the surface bonding ability of the semiconductor substrate structure 100 and the metal film structure 200. The metal film structure 200 can be heated to a higher bonding temperature to bond the semiconductor substrate structure 100 and the metal film structure 200 to part of the surface. The bonding state of the semiconductor substrate structure 100 and the metal film structure 200 can be fixed by natural cooling or applying external pressure to obtain a structure in a bonded state as shown in FIG15. The semiconductor device can be annealed to form an alloy structure 300 as shown in FIG7 at the bonding position.

Fig. 16 is a schematic structural diagram of a semiconductor device provided in an embodiment of the present application. In a second aspect of an embodiment of the present application, a semiconductor device is provided, which is prepared by any method for preparing a semiconductor device in the first aspect.

As shown in FIG. 16 , the semiconductor device includes a semiconductor substrate structure 100 , a metal film structure 200 , and an alloy structure 300 .

The semiconductor device provided in the embodiment of the present application can improve the uniformity and preparation purity of the metal film structure 200 by pre-forming the semiconductor substrate structure 100 and the metal film structure 200, and can make the metal film structure 200 reach a ductile state by heating the semiconductor substrate structure 100 and the metal film structure 200, so that the metal film structure 200 can be attached to the semiconductor substrate structure 100, thereby forming a semiconductor device with a metal film layer by fixing the attached state of the two. Therefore, the semiconductor device has a uniform and prepared metal film structure 200, which can reduce the resistive parasitic parameters of the semiconductor device, improve the reliability and stability of the semiconductor device, and further improve the yield rate of the semiconductor device.

In some feasible implementations, the metal film structure 200 of the semiconductor device includes a single metal film layer; or, the metal film structure 200 of the semiconductor device includes multiple metal film layers; wherein the metal film layer includes a patterned metal structure.

For example, when the metal film structure 200 includes multiple metal film layers, the multiple metal film layers may be formed by different metal materials, or may be formed by stacking film layers formed by the same material but with different graphical patterns.

The semiconductor device provided in the embodiment of the present application can be used to form metal electrodes of the semiconductor device, and can also be used to interconnect metal leads between different film layers in the semiconductor device, thereby realizing lateral and vertical metal interconnection, improving the practicality and convenience of the semiconductor device, thereby improving the electrical performance of the semiconductor device, and improving the stability and reliability of the semiconductor device.

In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims (10)

1. A method for preparing a semiconductor device, comprising: Providing a semiconductor substrate structure and a metal film structure; heating at least one of the semiconductor substrate structure and the metal thin film structure to a bonding temperature; Aligning a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure; Fixing the bonding state between the semiconductor substrate structure and the metal film structure; Wherein, providing a semiconductor substrate structure and a metal film structure comprises: Providing a semiconductor substrate and a metal film layer; Etching the semiconductor substrate to obtain the semiconductor substrate structure; forming alignment marks on the surfaces of the semiconductor substrate structure and the metal film layer; Performing a patterning process on the metal film layer to obtain the metal film structure; Wherein, the step of laminating a portion of the surface of the semiconductor substrate structure with a portion of the surface of the metal film structure comprises: The semiconductor substrate structure and the metal film structure are aligned and arranged according to the alignment mark. 2. The method for preparing a semiconductor device according to claim 1, wherein heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature comprises: The semiconductor substrate structure is heated to the bonding temperature so that the metal film structure reaches a ductile state at the bonding temperature. 3. The method for preparing a semiconductor device according to claim 1, characterized in that: The bonding temperature is related to the melting point of the metal film structure and the softening temperature of the metal film structure. 4. The method for preparing a semiconductor device according to claim 1, characterized in that before the step of heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature, it further comprises: The semiconductor substrate structure and the metal film structure are placed in a vacuum environment. 5. The method for preparing a semiconductor device according to claim 1, further comprising: Cleaning the surface of the metal film structure after bonding; The cleaned metal film structure is patterned. 6. The method for preparing a semiconductor device according to claim 1, characterized in that before the step of heating at least one of the semiconductor substrate structure and the metal film structure to a bonding temperature, it further comprises: The semiconductor substrate structure and the metal film structure are surface cleaned. 7. The method for preparing a semiconductor device according to claim 1, further comprising: Cleaning the surface of the semiconductor device after bonding; The cleaned semiconductor device is annealed. 8. The method for preparing a semiconductor device according to claim 1, wherein fixing the bonding state between the semiconductor substrate structure and the metal film structure comprises: Cooling the bonded semiconductor substrate structure and the metal film structure; and/or, Applying pressure to the bonded semiconductor substrate structure and the metal film structure. 9. A semiconductor device, characterized in that it is prepared by the method for preparing a semiconductor device according to any one of claims 1 to 8. 10. The semiconductor device according to claim 9, characterized in that The metal film structure includes a single metal film layer; or, The metal film structure includes multiple metal film layers; Wherein, the metal film layer includes a patterned metal structure.