CN118445216B

CN118445216B - Data reading and writing method, electronic device, storage medium and chip

Info

Publication number: CN118445216B
Application number: CN202311607978.XA
Authority: CN
Inventors: 李东承; 安健; 解鑫; 张丹; 贾梦华
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2023-11-28
Filing date: 2023-11-28
Publication date: 2025-03-25
Anticipated expiration: 2043-11-28
Also published as: CN118445216A

Abstract

The application provides a data read-write method, electronic equipment, a storage medium and a chip, and relates to the technical field of memories, wherein the method is used for writing ultralow temperature (or ultrahigh temperature) into data in a physical page, reading out the data when the ambient temperature is recovered to the normal temperature, and writing the data into a new physical page again at the normal temperature; since the temperature difference between the ultra-low temperature (or ultra-high temperature) and the normal temperature is not too large and the VT shift is not serious, the reliability of reading the data written at the ultra-low temperature (or ultra-high temperature) at the normal temperature is high, and similarly, the reliability of the data rewritten at the normal temperature is relatively high when the data written at the ultra-low temperature, the normal temperature or the ultra-high temperature is read, no matter the temperature difference between the reading and the writing is not too large and the VT shift is not serious.

Description

Data reading and writing method, electronic equipment, storage medium and chip

Technical Field

The present application relates to the field of memory technologies, and in particular, to a data reading and writing method, an electronic device, a storage medium, and a chip.

Background

The Flash memory may store programs and data. The cell is a basic memory cell of the flash memory, and is a semiconductor memory cell composed of floating gate transistors. The data may be programmed into the cell or read from the cell.

As more bit data is stored in one cell, the reliability of the flash memory is worse, especially in the case of adopting a four-layer cell memory technology (QLC) or even more layers of memory technologies, the temperature-crossing reliability of the flash memory is worse.

Disclosure of Invention

The application provides a data read-write method, electronic equipment, a storage medium and a chip, which can improve the read-write reliability of a memory under cross temperature.

In order to achieve the above object, the first aspect of the present application adopts the following technical scheme:

The first aspect of the present application provides a data reading and writing method, including:

When first data is written in a first physical page, if the ambient temperature is smaller than or equal to a first value, a first mark is written in the first physical page;

And when the ambient temperature is greater than the first value and less than a second value, reading the first data from a first physical page of the first mark, and writing the first data on a second physical page.

As the bit data stored in the cell is more, the normal distribution of the turn-on voltages of different states of the cell is denser, the reliability of the cell is poorer, and particularly under the condition of larger temperature difference, the VT (turn-on voltage probability density) deviation seriously causes the deviation of the reference voltage, so that the reliability is poorer.

For example, when data written at a temperature (may be written as an ultra-low temperature) lower than or equal to a first value is read at a temperature (may be written as an ultra-high temperature) higher than or equal to a second value, the VT shift is serious, resulting in poor read reliability.

To solve this problem, data written at an ultra-low temperature is read out at a normal temperature (a temperature located in the middle of the ultra-low temperature and the ultra-high temperature), and is rewritten at other physical pages at the normal temperature.

The temperature difference between the ultralow temperature and the normal temperature is not too large, the VT shift is not serious, so that the reliability of reading the data written at the ultralow temperature at the normal temperature is higher, and the reliability of the data rewritten at the normal temperature is higher at the ultralow temperature, the ultrahigh temperature or the normal temperature, no matter the temperature difference between the temperature at the time of reading and the temperature at the time of writing is not too large, and the VT shift is not serious, so that the reliability of the data written at the normal temperature at the ultralow temperature, the normal temperature or the ultrahigh temperature at the time of reading.

As another implementation manner of the first aspect of the present application, after the writing of the first data by the second physical page, the method further includes:

Writing a second mark on the second physical page.

In the application, not only the temperature mark when writing data at ultralow temperature is required to be set, but also the temperature mark when writing data at normal temperature is required to be set, so that the data written at ultralow temperature and the data written at normal temperature are distinguished.

The first physical page is marked as a physical page to be erased.

In the application, after the ultralow-temperature written data is read from the first physical page and written into other physical pages, the data in the original physical page can be erased, so the first physical page is marked as the physical page to be erased, and the data can be stored continuously after the first physical page is erased.

As another implementation manner of the first aspect of the present application, the first data is in a main memory area of the first physical page, and the first flag is in a spare memory area of the first physical page.

In the present application, the primary storage area in the physical page is typically used to store data, and the spare storage area is safer than the primary storage area, so that the spare storage area can be used to store the temperature flag.

Upon receiving an instruction to read out first data, the first data is read out from the second physical page.

In the application, the temperature when the second physical page writes the first data is in the normal temperature area, so after receiving the instruction for reading the first data, the probability of correctly reading the first data is high no matter the current temperature is in the ultra-low temperature area, the normal temperature area or the ultra-high temperature area.

As another implementation manner of the first aspect of the present application, the method further includes:

writing a third mark on a third physical page if the ambient temperature is greater than or equal to the second value while writing second data on the third physical page;

and when the ambient temperature is greater than the first value and less than the second value, reading the second data from a third physical page of the third mark, and writing the second data on a fourth physical page.

In the present application, data written at an ultra-high temperature is read out at a normal temperature (a temperature located in the middle of an ultra-low temperature and an ultra-high temperature), and is rewritten at other physical pages at the normal temperature.

The temperature difference between the ultra-high temperature and the normal temperature is not too large, and the VT shift is not serious, so that the reliability of reading ultra-high temperature written data at the normal temperature is higher, and the reliability of re-writing data at the normal temperature is higher at the ultra-low temperature, the ultra-high temperature or the ultra-high temperature, no matter the temperature difference between the temperature at the time of reading and the temperature at the time of writing is not too large, and the VT shift is not serious, so that the reliability of reading data written at the normal temperature at the ultra-low temperature, the normal temperature or the ultra-high temperature is higher.

As another implementation manner of the first aspect of the present application, after the writing of the second data on the fourth physical page, the method further includes:

Writing a third mark in a spare storage area of the fourth physical page;

marking the third physical page as a physical page to be erased;

upon receiving an instruction to read out second data, the second data is read out from the main memory area of the fourth physical page.

When third data is written in the main storage area of the fifth physical page, if the ambient temperature is larger than the first value and smaller than the second value, a second mark is written in the standby storage area of the fifth physical page;

Upon receiving an instruction to read out third data, the third data is read out from the main memory area of the fifth physical page.

In the present application, the data written in the normal temperature region can be read out without performing the process of repeating the writing, because the temperature difference between the normal temperature region and the ultra-low temperature region is not too large, and the temperature difference between the ultra-high temperature region is not too large, the VT curve shift is not obvious, and thus, the reliability of the data written in the normal temperature region at any temperature is high.

In a second aspect, there is provided an electronic device comprising a processor for invoking a computer program stored in a memory, implementing the method of any of the first aspects of the application.

In a third aspect, there is provided a chip comprising a processor coupled to a memory, the processor executing a computer program stored in the memory to implement the method of any of the first aspects of the application.

In a fourth aspect, there is provided a computer readable storage medium storing a computer program which, when run on an electronic device, causes the electronic device to carry out the method of any one of the first aspects of the application.

In a fifth aspect, embodiments of the present application provide a computer program product for, when run on a device, causing the device to perform the method of any one of the first aspects of the present application.

It will be appreciated that the advantages of the second to fifth aspects may be found in the relevant description of the first aspect, and are not described here again.

Drawings

Fig. 1 is a schematic diagram of a hardware structure of an electronic device in which a memory applied by a data read-write method according to an embodiment of the present application is located;

FIG. 2 is a graph showing the comparison of probability density curves of turn-on voltages for various memory technologies according to an embodiment of the present application;

FIG. 3 is a comparative schematic diagram of VT curves in an ultra-low temperature and ultra-high temperature environment of an SLC memory technology according to an embodiment of the present application;

FIG. 4 is a comparative schematic diagram of VT curves in an ultra-low temperature and ultra-high temperature environment of a QLC storage technology according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a temperature partition mode according to an embodiment of the present application;

FIG. 6 is a schematic diagram of another temperature partitioning method according to an embodiment of the present application;

FIG. 7 is a schematic diagram of a memory structure of a memory according to an embodiment of the present application;

FIG. 8 is a schematic diagram illustrating a cell change in a physical page during read/rewrite operations according to an embodiment of the present application;

FIG. 9 is a schematic diagram of a flow chart for writing data at ultra-low temperature or ultra-high temperature and rewriting read data in a normal temperature region according to an embodiment of the present application;

FIG. 10 is a schematic diagram of a flow chart for writing data at a normal temperature and reading data at a normal temperature according to an embodiment of the present application;

FIG. 11 is a schematic diagram showing a VT curve change at ultra-high Wen Douchu when writing at ultra-low temperature according to an embodiment of the present application;

FIG. 12 is a schematic diagram showing a VT curve change of writing at ultra-low temperature and reading and rewriting in a normal temperature region according to an embodiment of the present application;

fig. 13 is a schematic diagram showing VT curve change at the ultra-high Wen Douchu after writing in the normal temperature region according to an embodiment of the present application.

Detailed Description

In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details.

It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It should also be understood that in embodiments of the present application, "one or more" means one, two or more than two, "and/or" describes an association of associated objects, meaning that three relationships may exist, e.g., A and/or B may mean that A alone exists, while A and B together, B alone exists, wherein A, B may be singular or plural. The character "/" generally indicates that the context-dependent object is an "or" relationship.

Furthermore, in the description of the present specification and the appended claims, the terms "first," "second," "third," "fourth," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.

Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.

The method for reading and writing data provided by the embodiment of the application can be applied to a memory, and the memory can be applied to electronic equipment, wherein the electronic equipment can be electronic equipment such as a tablet personal computer, a mobile phone, a wearable device, a notebook computer, an ultra-mobile personal computer (UMPC), a netbook, a Personal Digital Assistant (PDA) and the like. The embodiment of the application does not limit the specific type of the electronic equipment.

Fig. 1 shows a schematic structural diagram of an electronic device. The electronic device 100 may include a processor 110, an external memory interface 120, an internal memory 121, a universal serial bus (universal serial bus, USB) interface 130, a charge management module 140, a power management module 141, a battery 142, an antenna 1, an antenna 2, a mobile communication module 150, a wireless communication module 160, an audio module 170, a speaker 170A, a receiver 170B, a microphone 170C, an earphone interface 170D, a sensor module 180, keys 190, a motor 191, an indicator 192, a camera 193, a display 194, and a subscriber identity module (subscriber identification module, SIM) card interface 195, etc. The sensor module 180 may include a pressure sensor 180A, a gyro sensor 180B, an air pressure sensor 180C, a magnetic sensor 180D, an acceleration sensor 180E, a distance sensor 180F, a proximity sensor 180G, a fingerprint sensor 180H, a temperature sensor 180J, a touch sensor 180K, an ambient light sensor 180L, a bone conduction sensor 180M, and the like.

It should be understood that the illustrated structure of the embodiment of the present application does not constitute a specific limitation on the electronic device 100. In other embodiments of the application, electronic device 100 may include more or fewer components than shown, or certain components may be combined, or certain components may be split, or different arrangements of components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

The processor 110 may include one or more processing units, for example, the processor 110 may include an application processor (application processor, AP), a modem processor, a graphics processor (graphics processing unit, GPU), an image signal processor (IMAGE SIGNAL processor, ISP), a controller, a memory, a video codec, a digital signal processor (DIGITAL SIGNAL processor, DSP), a baseband processor, and/or a neural network processor (neural-network processing unit, NPU), etc. Wherein the different processing units may be separate devices or may be integrated in one or more processors. For example, the processor 110 is configured to perform a data read-write method in an embodiment of the present application.

A memory may also be provided in the processor 110 for storing instructions and data. In some embodiments, the memory in the processor 110 is a cache memory. The memory may hold instructions or data that the processor 110 has just used or recycled. If the processor 110 needs to reuse the instruction or data, it may be called directly from memory. Repeated accesses are avoided and the latency of the processor 110 is reduced, thereby improving the efficiency of the system.

The internal memory 121 may be used to store computer-executable program code that includes instructions. The processor 110 executes various functional applications of the electronic device 100 and data processing by executing instructions stored in the internal memory 121. The internal memory 121 may include a storage program area and a storage data area.

In addition, the internal memory 121 may include a high-speed random access memory, and may further include a nonvolatile memory such as at least one magnetic disk storage device, a flash memory device, a universal flash memory (universal flash storage, UFS), and the like. The data and the like in the embodiment of the application can be stored in the physical page of the internal memory.

The audio module 170 is used to convert digital audio signals to analog audio signal outputs and also to convert analog audio inputs to digital audio signals. The audio module 170 may also be used to encode and decode audio signals. In some embodiments, the audio module 170 may be disposed in the processor 110, or a portion of the functional modules of the audio module 170 may be disposed in the processor 110.

The speaker 170A, also referred to as a "horn," is used to convert audio electrical signals into sound signals. The electronic device 100 may listen to music, or to hands-free conversations, through the speaker 170A.

The touch sensor 180K, also referred to as a "touch panel". The touch sensor 180K may be disposed on the display screen 194, and the touch sensor 180K and the display screen 194 form a touch screen, which is also called a "touch screen". The touch sensor 180K is for detecting a touch operation acting thereon or thereabout. The touch sensor may communicate the detected touch operation to the application processor to determine the touch event type. Visual output related to touch operations may be provided through the display 194. In other embodiments, the touch sensor 180K may also be disposed on the surface of the electronic device 100 at a different location than the display 194.

The electronic device 100 implements display functions through a GPU, a display screen 194, an application processor, and the like. The GPU is a microprocessor for image processing, and is connected to the display 194 and the application processor. The GPU is used to perform mathematical and geometric calculations for graphics rendering. Processor 110 may include one or more GPUs that execute program instructions to generate or change display information.

The display screen 194 is used to display images, videos, and the like. The display 194 includes a display panel. The display panel may employ a Liquid Crystal Display (LCD) CRYSTAL DISPLAY, an organic light-emitting diode (OLED), an active-matrix organic LIGHT EMITTING diode (AMOLED), a flexible light-emitting diode (FLED), miniled, microLed, micro-oLed, a quantum dot LIGHT EMITTING diode (QLED), or the like. In some embodiments, the electronic device 100 may include 1 or N display screens 194, N being a positive integer greater than 1.

The camera 193 is used to capture still images or video. In some embodiments, electronic device 100 may include 1 or N cameras 193, N being a positive integer greater than 1.

Video codecs are used to compress or decompress digital video. The electronic device 100 may support one or more video codecs. In this way, the electronic device 100 may play or record video in a variety of encoding formats.

The NPU is a neural-network (NN) computing processor, and can rapidly process input information by referencing a biological neural network structure, for example, referencing a transmission mode between human brain neurons, and can also continuously perform self-learning. The NPU can implement applications such as intelligent cognition of the electronic device 100.

The embodiment of the present application is not particularly limited to a specific structure of an execution body of a data read-write method, as long as communication can be performed by running a code recorded with the data read-write method of the embodiment of the present application, with the data read-write method provided according to the embodiment of the present application. For example, the execution body of a data read-write method provided by the embodiment of the application may be a functional module in an electronic device capable of calling a program and executing the program, or a communication device, such as a chip, applied to the electronic device.

The Flash memory may store programs and data. Cell is a basic memory Cell of a flash memory, and is a semiconductor memory Cell composed of floating gate transistors. The data may be programmed into the cell or read from the cell.

The Cell can be regarded as a common Metal-Oxide-semiconductor field effect transistor (MOSFET) tube, which can be called as an MOS tube for short, and the MOS tube can be conducted only by applying a smaller voltage to the grid electrode. If a certain amount of electrons are injected into the floating gate of the MOS transistor, an electric field is formed between the substrate and the floating gate, and in order to turn on the MOS transistor, a larger voltage is required to be applied to the gate to overcome the electric field between the substrate and the floating gate.

Based on the above principle, as an example of programming and writing data in a cell, a programming voltage (for example, 10V) is applied to a floating gate of the cell, which corresponds to injecting a certain amount of electrons into the floating gate of the cell, and the data "0" is written in the cell. Accordingly, if no programming voltage is applied to the floating gate of the cell (e.g., 1V is maintained), it is equivalent to that electrons are not injected into the floating gate of the cell, and the data in the cell is "1".

Based on the above principle, as an example of reading data from the cell, a cell which is not programmed is turned on by applying a voltage of 5V to the gate, and a current passes, and a cell which is programmed is still in an off state, and no current passes. Therefore, whether data in a cell is "1" or "0" can be determined by whether or not a current flows. Of course, the data in the cell can also be determined by the threshold voltage when the cell is turned on, since a certain amount of electrons are injected into the floating gate of the cell by applying the program voltage, the reference voltage is determined to be 8V according to the program voltage. When the data stored in the cell is read, if the threshold voltage of the turned-on cell is 10.5V and is greater than the reference voltage of 8V, the data in the cell is determined to be 0. Therefore, it is possible to determine whether the data in the cell is "1" or "0" by conducting the comparison of the threshold voltage of the cell and the reference voltage.

In this way, 1bit of data can be written in one cell, which is called a single-layer cell memory technology (SINGLE LEVEL CELL, SLC).

In order to store more bits of data in 1 cell, a multi-layer cell storage technology (multi LEVEL CELL, MLC) has emerged, i.e. each cell can store 2 bits of data, and has evolved to the end of three-layer cell storage (TRIPLE LEVEL CELL, TLC), i.e. each cell can store 3 bits of data, and has evolved to a four-layer cell storage technology (QLC), i.e. each cell can store 4 bits of data, and even to a five-layer cell storage technology (PENTA LEVEL CELL, PLC), i.e. each cell can store 5 bits of data.

In the case where more bit data needs to be stored in the cell, more states than just two states "1" and "0" may be included in the cell, for example, "11", "01", "00" and "10", and of course, more states may occur depending on how much bit data is stored.

In order to distinguish different states of the cell, different programming voltages are applied to the floating gate of the cell, which is equivalent to injecting different numbers of electrons into the floating gate of the cell, and the different programming voltages correspond to different states. For example, 3V corresponds to one state "11",6V corresponds to one state "01",9V corresponds to one state "00", and 12V corresponds to one state "10". The reference voltages for distinguishing between the different states may be set to 4.5V, 7.5V, and 10.5V in order according to the states.

If the threshold voltage of the cell is 2.9V, the read data can be determined to be 11 if the threshold voltage of the cell is less than 4.5V, and similarly, if the threshold voltage of the cell is 6.2V, the read data can be determined to be 01 if the threshold voltage of the cell is between 4.5V and 7.5V, and similarly, if the threshold voltage of the cell is 8.9V, the threshold voltage of the cell is between 7.5V and 10.5V, the read data can be determined to be 00 if the threshold voltage of the cell is 8.9V, the read data can be determined to be 10 if the threshold voltage of the cell is 12.3V, and the read data can be determined to be 10 if the threshold voltage of the cell is 12.3V.

In practical applications, for multiple cells in the same state, the threshold voltages for turning on the cells are normally distributed, i.e. the threshold voltages are most concentrated at the center of the normal distribution, e.g. 3V, 6V, 9V and 12V in the above examples.

If the reference voltage is set to be the voltage corresponding to the center position of the normal distribution, the data of the cells with the threshold voltages at the left side of the center position of the normal distribution are read normally, the data of the cells with the threshold voltages at the right side of the center position of the normal distribution are possibly read wrongly, so the reference voltage can be set to be a value larger than the threshold voltages of most of the cells, and the data of most of the cells can be read normally.

For a more clear understanding of the above description, reference may be made to the threshold voltage probability density curve schematic shown in fig. 2.

Referring to fig. 2, a threshold voltage probability density (VT) curve versus schematic diagram of a plurality of memory technologies is provided according to an embodiment of the present application.

In the single-layer cell storage technology, one cell stores 1bit of data, the cell comprises two states, the threshold voltage distribution interval between the states is wider, and the more the bit of data stored in the cell is, the more the cell comprises the states, the narrower the threshold voltage distribution interval between the states is.

In order to enable the reference voltage to cover the threshold voltages of most cells in this state, the reference voltage is typically set to a voltage corresponding to the trough position in the middle of the normal distribution of the current state and the normal distribution of the next state.

It can be understood that the fewer bit data stored in a cell, the wider the threshold voltage distribution between different states, the farther the distance between adjacent states, the less prone to error when the data is read out by the read-out voltage, and similarly, the more the bit data stored in a cell, the narrower the threshold voltage distribution between different states, the closer the distance between adjacent states, and even the crossing, the more prone to error when the data is read out by the reference voltage, which results in lower reliability as the number of bits stored in each cell increases.

In addition, at low temperature, electron energy is low, quantum tunneling probability is low, so electrons captured in the floating gate are less, an electric field from the substrate to the floating gate is small, when data needs to be read, a forward threshold voltage to be applied to the gate is small, and when the data is low, a VT curve moves leftwards.

Similarly, at high temperature, the electron energy is higher, the probability of quantum tunneling is higher, more electrons are captured in the floating gate, the electric field from the substrate to the floating gate is stronger, and when data needs to be read out, the forward threshold voltage to be applied to the gate is larger, and the VT curve moves rightwards when the gate is at high temperature.

Referring to fig. 3 and fig. 4, VT curves of the ultra-low temperature environment and the ultra-high temperature environment according to the embodiment of the present application are compared.

Referring to fig. 3, in order to show a VT curve when writing data at an ultra-low temperature and a VT curve when writing data at an ultra-high temperature in the SLC memory technology, it can be understood that the memory enters the ultra-high temperature environment from the ultra-low temperature environment, the VT curve shifts to the right, and the normal distribution distances of threshold voltages in different states are far due to the SLC technology, so that even if the VT curve shifts, the data can still be correctly read out through the reference voltage.

Referring to fig. 4, a VT curve of the QLC memory technology when writing data at an ultra-low temperature and a VT curve of the QLC memory technology when writing data at a high temperature are shown, it can be understood that the memory enters the ultra-high temperature environment from the ultra-low temperature environment, the VT curve shifts to the right, and after the VT curve shifts, some cells may read errors when determining the read data by using a reference voltage due to the fact that the normal distribution distances of threshold voltages of different states are relatively close.

Experiments have found that the temperature crossing capability of QLC differs by about 40 ℃ compared to TLC. The quality of the cross-temperature capability directly affects the data security, for example, writing a data into a cell at a low temperature, but reading at a higher temperature, because the reference voltage is shifted, may cause errors in the read data of some cells, or even permanent loss of the data.

To solve this problem, referring to FIG. 5, the temperature can be divided into three zones, an ultra low temperature zone (+.about.20℃), a normal temperature zone (+.about.20℃and <50 ℃), an ultra high temperature zone (. Gtoreq.50 ℃). The normal temperature region is characterized in that the temperature difference between the normal temperature region and the ultra-low temperature region is not too large, the VT curve deviation is not too serious, the reliability is still higher when the data are written in and read out from each other, meanwhile, the temperature difference between the normal temperature region and the ultra-high temperature region is not too large, the VT curve deviation is not serious, and the reliability is still higher when the data are read out from each other and written in.

Based on the principle, the normal temperature zone can be determined according to the working environment of the memory, wherein the temperature zone lower than the normal temperature zone is an ultra-low temperature zone, and the temperature zone higher than the normal temperature zone is an ultra-high temperature zone. Therefore, -20 ℃ and 50 ℃ in the above examples are only examples, and in practical applications, the three zones may also be divided by other values.

Currently, a temperature sensor is built in many flash memories, and the temperature sensor can monitor the ambient temperature around the memories according to a certain sampling frequency.

The embodiment of the application can read the data written in the cell in the ultra-low temperature area (or ultra-high temperature area) by the reference voltage in the normal temperature area, and can correctly read the data by the reference voltage because the temperature span between the ultra-low temperature area and the normal temperature area (or the temperature span between the ultra-high temperature area and the normal temperature area) is not particularly large, and the VT curve deviation is not particularly large.

Of course, the data is rewritten in the current normal temperature zone immediately after the data is correctly read out in the normal temperature zone. This corresponds to writing the data in the normal temperature region.

Since the temperature span between the normal temperature region and the ultra-high temperature region is not particularly large, and the VT curve shift is not particularly large, the data rewritten in the normal temperature region can be correctly read in the ultra-high temperature region, but the data written in the ultra-low temperature region may be read abnormally by reading in the ultra-high temperature region.

Similarly, since the temperature span between the normal temperature region and the ultra-low temperature region is not particularly large, and the VT curve shift is not particularly large, the data rewritten in the normal temperature region can be correctly read in the ultra-low temperature region.

Naturally, the data rewritten in the normal temperature region can be correctly read also in the normal temperature region.

Of course, in the above example, "correct readout" does not indicate a certain correct readout but indicates a high probability of correctly reading out data, and "readout abnormality" does not indicate a certain readout abnormality but indicates a high probability of readout abnormality. The expression is also continued later.

In practice, if the VT curve shift between the high temperature range (e.g., 45 ℃) and the ultra-low temperature range (e.g., -40 ℃) in the normal temperature is also relatively large, the VT curve shift between the low temperature range (e.g., -15 ℃) and the ultra-high temperature range (e.g., 70 ℃) in the normal temperature is also relatively large, the temperature can be divided into four regions, namely, the ultra-low temperature region (+-20 ℃), the low temperature region (> -20 ℃) and <15 ℃), the high temperature region (+.15 ℃) and the ultra-high temperature region (+.50 ℃). The VT curve between each temperature zone and the left and right adjacent temperature zones is not greatly deviated, and the reliability is still higher when writing data and reading data between the current temperature zone and the adjacent temperature zones.

Referring to fig. 6, another temperature partitioning method is provided in an embodiment of the present application. Also, -20 degrees celsius, 15 degrees celsius, 50 degrees celsius, among others, are just one example.

The data a written in the cell at the ultra-low temperature region can be read out by a read-out voltage at the low temperature region, and rewritten at the current low temperature region. The data A can be correctly read out in the ultra-low temperature area, the low temperature area and the high temperature area. When the ambient temperature enters the high temperature region from the low temperature region, the data B written in the low temperature region and the data a rewritten in the low temperature region can also be read out, and the data a and the data B are rewritten in the high temperature region. The data A and the data B can be correctly read out in a low temperature area, a high temperature area and an ultra-high temperature area. Of course, when the ambient temperature enters the ultra-high temperature region from the high temperature region, the above steps do not need to be repeatedly performed.

Similarly, the data C written in the cell in the ultra-high temperature area can be read out by the read-out voltage in the high temperature area, and the data C can be rewritten in the current high temperature area. The data C can be correctly read out in the ultra-high temperature region, the high temperature region and the low temperature region later. When the ambient temperature enters the low temperature region from the high temperature region, the data D written in the high temperature region and the data C rewritten in the low temperature region can also be read out, and the data C and the data D rewritten in the low temperature region. The data C and the data D can be correctly read out in the high-temperature area, the low-temperature area and the ultra-low-temperature area. Of course, when the ambient temperature enters the ultra-low temperature zone from the low temperature zone, the above steps do not need to be repeatedly performed.

In this way, the process of reading and rewriting can be continuously performed with the change of the ambient temperature after all the data are written in the low temperature area and the high temperature area, and of course, in practical application, the main temperature area where the memory works can be determined according to the ambient temperature monitored by the temperature sensor, so that the data can be rewritten in the middle range of the main temperature area in a read and rewriting mode. For example, the main temperature region is concentrated at the ultra-low temperature, low temperature and high temperature regions, and data can be rewritten in the low temperature region by one or more read-and-write methods. The main temperature region is concentrated in the ultra-high temperature, high temperature and low temperature regions, so that data can be rewritten in the high temperature region by one or more read-out and rewrite modes.

Of course, in practical application, more temperature areas can be set according to practical situations, and the embodiment of the application does not need to exemplify a manner of reading and rewriting more temperature areas.

A specific implementation procedure of the data read-write method will be described below taking the division of temperature into three areas as an example.

Referring to fig. 7, when writing data in a flash memory, a plurality of cells are included in one physical page, not in a single cell unit, but in a physical page unit. Each physical page includes a primary storage area and a spare storage area.

The embodiment of the application can write data in the main storage area of each physical page, and take out 2 bit data in the standby storage area to record the temperature mark when the physical page writes data. As an example, ultra-low temperature may be recorded with 00, normal temperature with 01, and ultra-high temperature with 11. Of course, the above-described temperature marks are merely examples, and in practical applications, the recording may be performed using different temperature marks from those described above, as the case may be.

Referring to fig. 8, when the normal temperature is entered from the ultra low temperature region (or ultra high temperature region), data in a physical page whose temperature flag of the spare memory area is "00" (or "11") is read out, rewritten into a new physical page in the new block, and the spare memory area of the new physical page is written into a temperature flag "01" of the normal temperature. The old physical page from which data has been read is marked as the physical page from which data needs to be erased, awaiting subsequent erasure.

Referring to fig. 9, a schematic diagram of a flow chart of writing data in an ultra-low temperature region (or ultra-high temperature region) and reading and rewriting data in a normal temperature region according to an embodiment of the present application is shown.

S101, monitoring the ambient temperature of the flash memory through a temperature sensor in a preset time period (or sampling rate).

In the embodiment of the application, the ambient temperature is not the ambient temperature of the electronic equipment where the memory is located, and the temperature of the memory is possibly increased when the memory is subjected to frequent read-write operation, so that the temperature of the memory is higher than the temperature of the environment where the electronic equipment where the memory is located. In the embodiment of the application, the temperature shift of the VT curve is related to the temperature of the memory itself, so the temperature sensor should theoretically monitor the temperature of the memory itself, but due to technical limitations, the temperature sensor actually monitors the ambient temperature around the memory. Of course, the ambient temperature around the memory is closer to the temperature of the memory itself than the ambient temperature around the electronic device. As technology advances, the temperature sensor may be a sensor disposed on the memory itself, and may be capable of actually measuring the temperature of the memory itself. Similar modifications can be made in the principles of the application, which are within the scope of the application.

S102, writing first data in a main storage area of a first physical page of the flash memory.

S103, after the first data are written, judging whether the environmental temperature monitored by the temperature sensor in real time is in an ultra-low temperature area or an ultra-high temperature area.

S1041, if the ambient temperature monitored by the temperature sensor is in the ultralow temperature region, writing a first mark in a standby storage region of the first physical page.

The first mark is used for marking ultra-low temperature zone writing. For example, "00". Wherein the spare memory area and the main memory area adopt the same memory technology, for example, both are MLC memory technology or both are TLC memory technology.

S1051, after the first mark is written, judging whether the temperature monitored by the temperature sensor enters a normal temperature zone from an ultralow temperature zone.

If the ambient temperature monitored by the temperature sensor does not enter the normal temperature zone from the ultralow temperature zone, the ambient temperature monitored by the temperature sensor is continuously acquired, and whether the temperature monitored by the temperature sensor enters the normal temperature zone from the ultralow temperature zone is continuously judged.

S1061, if the ambient temperature monitored by the temperature sensor enters a normal range from an ultralow temperature range, reading out the first data in the first physical page with the first mark, writing the first data in the main storage area of the second physical page, writing the second mark in the standby storage area of the second physical page, and marking the first physical page as a physical page of the data to be erased.

In the embodiment of the present application, other data may be written in other physical pages in the ultra-low temperature area, and this step is to read and rewrite data in all physical pages with the first mark.

The second mark indicates normal temperature zone writing, for example, "01".

After S1061, the first data is read from the second physical page regardless of whether the ambient temperature of the memory is maintained in the normal temperature region or returned to the ultra-low temperature region or into the ultra-high temperature region, and the second physical page is written in the normal temperature region when the first data is written in the first physical page, so that the probability of correctly reading the data is high regardless of whether the ambient temperature of the memory is read in the normal temperature region (the read temperature and the write temperature span are small) or returned to the ultra-low temperature region (the read temperature and the write temperature span are not large) or into the ultra-high temperature region (the read temperature and the write temperature span are not large).

As an example of reading out the first data in the second physical page at any temperature.

S1071, upon receiving a read instruction of the first data, reads the data from the second physical page.

S1081, if the data read out of the second physical page is abnormal, performing error correction processing on the data read out of the abnormal data to obtain the first data.

In a specific implementation, the method of performing error correction processing on the data read out abnormally may be any error correction method such as ECC error correction.

S1091, if the data read out from the second physical page is normal, the read first data is returned to the sender of the read instruction.

Of course, after S103, another case may exist:

s1042, if the ambient temperature monitored by the temperature sensor is in the ultra-high temperature region, writing a third mark in the spare storage area of the first physical page.

The third mark is used for marking the ultra-high temperature zone writing. For example, "11".

S1052, after writing the third mark, it is determined whether the temperature monitored by the temperature sensor enters the normal temperature zone from the ultra-high temperature zone.

If the ambient temperature monitored by the temperature sensor does not enter the normal temperature zone from the ultra-high temperature zone, the ambient temperature monitored by the temperature sensor is continuously acquired, and whether the temperature monitored by the temperature sensor enters the normal temperature zone from the ultra-high temperature zone is continuously judged.

S1062, if the ambient temperature monitored by the temperature sensor enters a normal range from the ultra-high temperature range, reading the first data in the first physical page with the third mark, writing the first data in the main storage area of the fourth physical page, writing the second mark in the standby storage area of the fourth physical page, and marking the first physical page as the physical page of the data to be erased.

In the embodiment of the present application, other data may be written in other physical pages in the ultra-high temperature area, and this step is to read and rewrite data in all physical pages with the third mark.

After S1062, the first data is read from the fourth physical page regardless of whether the ambient temperature of the memory is maintained in the normal temperature region, returned to the ultra-high temperature region, or entered into the ultra-low temperature region, and since the first data is written in the normal temperature region when the fourth physical page is written in the first data, the probability of correctly reading the data is high regardless of whether the ambient temperature of the memory is read in the normal temperature region (the read temperature and the write temperature span are small), returned to the ultra-high temperature region (the read temperature and the write temperature span are not large), or entered into the ultra-low temperature region (the read temperature and the write temperature span are not large).

As an example of reading out the first data in the fourth physical page at any temperature.

S1072, upon receiving a read instruction of the first data, reads out the data from the fourth physical page.

S1082, if the data read out in the fourth physical page is abnormal, performing error correction processing on the data read out abnormally to obtain the first data.

S1092, if the data read out in the fourth physical page is normal, the read-out first data is returned to the sender of the read-out instruction.

Of course, in practical applications, it is also possible to write data in the normal temperature range, and in this case, the operations of reading and repeating writing are not required, and the details are shown in fig. 10. After S103, further including:

S1043, if the ambient temperature monitored by the temperature sensor is in the normal temperature zone, writing a second mark in the standby storage area of the first physical page.

After S1043, the first data is read from the first physical page regardless of whether the ambient temperature of the memory is maintained in the normal temperature region, enters the ultra-high temperature region, or enters the ultra-low temperature region, and the first data is read out from the first physical page, and because the first data is written in the normal temperature region when the first physical page is written in the first data, the probability of correctly reading the data is high regardless of whether the ambient temperature of the memory is maintained in the normal temperature region, whether the ambient temperature of the memory is read out into the ultra-high temperature region (the read-out temperature and the write-in temperature span is small), or whether the ambient temperature of the memory is read out into the ultra-high temperature region (the read-out temperature and the write-in temperature span is not large).

As an example of reading out the first data in the first physical page at any temperature.

S1053, upon receiving the read instruction of the first data, reads out the data from the first physical page.

S1063, if the data in the first physical page is read abnormally, performing error correction processing on the read abnormally data to obtain the first data.

S1073, if the data read out in the first physical page is normal, the read-out first data is returned to the sender of the read-out instruction.

The above embodiment describes the flow of writing, reading, and rewriting using only one first data as an example. In practical applications, there may be second data, third data, fourth data, etc., where the writing, reading, and re-writing of these data are similar. The embodiment of the present application is not limited to the embodiments based on the core application. Of course, the first physical page, the second physical page, and the fourth physical page in the above examples are also examples, and in practical applications, there may be a third physical page, a fifth physical page, and the like that participate in the writing, reading, and rewriting processes.

Referring to fig. 11, a VT curve change of writing data at an ultra-low temperature and reading data at an ultra-high temperature is schematically shown. It can be understood that, since the VT curve when the data is read out at the ultra-high temperature is greatly shifted from the VT curve when the data is written in at the ultra-low temperature, the reference voltage when the data is read out at the ultra-high temperature is also greatly shifted from the reference voltage when the data is written in at the ultra-low temperature. Then the threshold voltage read during the ultra-high temperature data reading is compared with the reference voltage, so that the abnormality is easy to read during the cell state judgment.

The data read-write method provided by the embodiment of the application is described below through fig. 12 and 13, and the reason why the data is read out in the normal temperature region and written again after the data is written at the ultra-low temperature is described, and the abnormality is not easy to read out when the data is read at the ultra-high temperature.

Referring to fig. 12, a VT curve change chart of writing data at an ultra-low temperature, reading data in a normal temperature range, and rewriting data is shown. It can be understood that since the shift between the VT curve when the normal temperature region reads out data is small relative to the VT curve when the data is written at the ultra-low temperature, the shift between the reference voltage when the normal temperature reads out data is small relative to the reference voltage when the data is written at the ultra-low temperature. Then the comparison between the threshold voltage read at the time of reading out the data at the normal temperature and the reference voltage is performed so that the abnormality is less likely to be read out when judging the state of the cell.

Referring to fig. 13, a VT curve change of data read at an ultra-high temperature after rewriting data in a normal temperature range is shown. It can be understood that since the shift between the VT curve when the data is read out in the ultra-high temperature region is small with respect to the VT curve when the data is written in the normal temperature region, the shift between the reference voltage when the data is read out in the ultra-high temperature region with respect to the reference voltage when the data is written in the normal temperature region is also small. Then the threshold voltage read during the ultra-high temperature data reading is compared with the reference voltage, so that the abnormality is not easy to read during the cell state judgment.

As can be understood from a comparison between fig. 11 and fig. 13, by writing the ultra-low temperature written data again after reading at the normal temperature, the VT curve of the read data entering the ultra-high temperature area again changes less, and the probability of abnormal reading is greatly reduced.

It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present application.

The embodiment of the application also provides a computer readable storage medium, and the computer readable storage medium stores a computer program, and the computer program can realize the steps in the method embodiments when running on electronic equipment.

Embodiments of the present application also provide a computer program product enabling an electronic device to carry out the steps of the method embodiments described above when the computer program product is run on the electronic device or a wireless router.

The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the present application may implement all or part of the flow of the method of the above-described embodiments, and may be implemented by a computer program to instruct related hardware, and the computer program may be stored in a computer readable storage medium, where the computer program, when executed by a processor, may implement the steps of each of the method embodiments described above. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, executable files or in some intermediate form, etc. The computer readable medium can include at least any entity or means capable of carrying computer program code to a first device, a recording medium, computer Memory, read-Only Memory (ROM), random access Memory (RAM, random Access Memory), electrical carrier signals, telecommunications signals, and software distribution media. Such as a U-disk, removable hard disk, magnetic or optical disk, etc. In some jurisdictions, computer readable media may not be electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.

The embodiment of the application also provides a chip, which comprises a processor, wherein the processor is coupled with the memory, and the processor calls a computer program stored in the memory to realize the steps of any method embodiment of the application. The chip may be a single chip or a chip module composed of a plurality of chips.

In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.

Those of ordinary skill in the art will appreciate that the elements and method steps of the examples described in connection with the embodiments disclosed herein can be implemented as electronic hardware, or as a combination of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

The foregoing embodiments are merely for illustrating the technical solution of the present application, but not for limiting the same, and although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solution described in the foregoing embodiments may be modified or substituted for some of the technical features thereof, and that these modifications or substitutions should not depart from the spirit and scope of the technical solution of the embodiments of the present application and should be included in the protection scope of the present application.

Claims

1.A data reading and writing method, characterized by comprising:

reading the first data from a first physical page of the first mark and writing the first data and a second mark on a second physical page when the ambient temperature changes to be greater than the first value and less than a second value;

Reading the first data from a second physical page of the second mark and writing the first data and a third mark on a third physical page when the ambient temperature changes to greater than or equal to the second value and less than a third value;

when the ambient temperature changes to be greater than or equal to a third value, no read-re-write operation of the first data is performed;

Writing a fourth mark on a fourth physical page if the ambient temperature is greater than or equal to a third value when writing second data on the fourth physical page;

reading the second data from a fourth physical page of the fourth mark and writing the second data and a third mark on a fifth physical page when the ambient temperature changes to be greater than or equal to the second value and less than a third value;

Reading the second data from a fifth physical page of the third mark, writing the second data and the second mark on a sixth physical page, reading the first data from the third physical page of the third mark, and writing the first data and the second mark on a seventh physical page when the ambient temperature changes to be greater than the first value and less than the second value;

And when the ambient temperature changes to be less than or equal to the first value, the read and repeat write operations of the first data and the second data are not performed.

2. The method of claim 1, wherein after writing the first data to a second physical page, the method further comprises:

marking the first physical page as a physical page to be erased;

After the third physical page is written to the first data, the method further comprises:

the second physical page is marked as a physical page to be erased.

3. The method of claim 1 or 2, wherein the first data is in a primary storage area of the first physical page and the first tag is in a spare storage area of the first physical page.

4. The method of claim 2, wherein after a second physical page writes the first data, the method further comprises, prior to erasing the first data written by the second physical page:

5. An electronic device comprising a processor for invoking a computer program in memory to perform the method of any of claims 1-4.

6. A computer readable storage medium storing computer instructions which, when run on an electronic device, cause the electronic device to perform the method of any one of claims 1-4.

7. A chip comprising a processor for invoking a computer program in memory to perform the method of any of claims 1-4.