CN118563289B - Chemical vapor deposition method and apparatus capable of improving film formation uniformity - Google Patents
Chemical vapor deposition method and apparatus capable of improving film formation uniformity Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 235
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 101
- 230000015572 biosynthetic process Effects 0.000 title claims description 14
- 230000008569 process Effects 0.000 claims abstract description 185
- 238000005070 sampling Methods 0.000 claims abstract description 127
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000005234 chemical deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 79
- 235000012431 wafers Nutrition 0.000 description 36
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
本发明提供一种可改善成膜均匀性的化学气相沉积方法及设备，方法包括如下步骤：在化学气相沉积工艺第一阶段中，对射频信号的反射功率进行信号采样；在化学气相沉积工艺第二阶段中，根据反射功率的采样信号对射频信号的时间或功率进行补偿；对所述射频信号的时间补偿满足如下条件：；对所述射频信号的功率补偿满足如下条件：。本发明通过在化学气相沉积对反射功率进行采样，并对射频信号的时间或功率进行补偿，从而使化学气相沉积成膜厚度的片间均匀性得到显著改善，有助于提高生产良率。
The present invention provides a chemical vapor deposition method and device capable of improving film uniformity. The method comprises the following steps: in the first stage of the chemical vapor deposition process, sampling the reflected power of the radio frequency signal; in the second stage of the chemical vapor deposition process, compensating the time or power of the radio frequency signal according to the sampled signal of the reflected power; the time compensation of the radio frequency signal satisfies the following conditions: ; The power compensation of the radio frequency signal satisfies the following conditions: The present invention samples the reflected power during chemical vapor deposition and compensates the time or power of the radio frequency signal, thereby significantly improving the inter-sheet uniformity of the chemical vapor deposition film thickness, which helps to improve the production yield.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit fabrication, and more particularly, to a chemical vapor deposition method and apparatus for improving film formation uniformity.
Background
In the fabrication of semiconductor wafers, chemical vapor deposition is one of the main processes for forming thin film structures. Wherein, the uniformity of the film is an important index for representing the film forming quality and stability of the chemical vapor deposition process. As feature sizes of semiconductor processes continue to decrease, the requirements of semiconductor process processes for film uniformity are increasing.
At present, plasma Enhanced Chemical Vapor Deposition (PECVD) is widely applied to film forming processes for wafer manufacturing, has the advantages of low deposition temperature, high deposition rate, good film forming compactness and the like, and can be used for preparing various dielectric layers or conductive layer films. PECVD processes typically employ an RF power source to generate a plasma, which ionizes by exciting a process gas within a reaction chamber, creating a chemical deposition reaction, and ultimately producing a deposited film on the wafer.
However, the inventors have found through extensive studies that during ignition in the reaction chamber of an RF power supply, a relatively large and unstable reflected power tends to occur due to variations in chamber pressure, type of noble gas, or the like. The reflected power can cause radio frequency energy loss, so that the actual power applied to the reaction process is reduced, the film forming rate in the reaction cavity is further changed, and finally the fluctuation of the film forming thickness is caused, so that the uniformity of the film thickness among wafers is influenced. The uniformity fluctuation among wafers can influence the process stability, so that the product yield rate can be fluctuated. Therefore, how to reduce the influence of the reflected power on the uniformity between film thickness sheets in the PECVD process is an important issue for improving the stability of the PECVD process and the yield of the product.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present invention and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the invention section.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a chemical vapor deposition method and apparatus capable of improving uniformity of a film, which are used for solving the problems of the prior art that the reflected power affects uniformity among film thickness sheets in a PECVD process.
To achieve the above and other objects, the present invention provides a chemical vapor deposition method for improving uniformity of a film, comprising the steps of:
in the first stage of the chemical vapor deposition process, sampling the reflected power of the radio frequency signal;
In the second stage of the chemical vapor deposition process, compensating the time or power of the radio frequency signal according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
in the above formula, T is the total process time, T 1 is the first stage process time, T P is the sampling time, In order to compensate the process time, a is sampling interval time, pt is reflected power during sampling, P is radio frequency signal power, and C T is a time compensation coefficient;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, To compensate the rf signal power, T 1 is the first stage process time, T P is the sampling time, a is the sampling interval time, pt is the reflected power at the time of sampling, and C P is the power compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate for process time, T R is the reflected power duration and C T is the time compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate for process time, T R is reflected power duration, a is sampling interval time, pt is reflected power at the time of sampling, P is radio frequency signal power, and C T is a time compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate the process time, a is the sampling interval time, pt is the reflected power during sampling, P is the rf signal power, and C T is the time compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, T N is the sampling time of N seconds before the end of the first stage process, To compensate the process time, a is the sampling interval time, pt is the reflected power during sampling, P is the rf signal power, and C T is the time compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
in the above formula, T is the total process time, T 1 is the first stage process time, T M is the sampling time of M seconds after the first stage process starts, T N is the sampling time of N seconds before the first stage process ends, For the first time of the compensation process,For the second compensation process time, a is the sampling interval time, pt is the reflected power when sampling, P 0 is the ignition power, P is the radio frequency signal power, C Ta is the first time compensation coefficient, and C Tb is the second time compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, compensating the power of the radio frequency signal according to the sampling signal of the reflected power;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, For the first compensation of the radio frequency signal power,For the second compensated rf signal power, T M is the sampling time M seconds after the first stage process starts, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power at the time of sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
In an alternative, in the second stage of the chemical vapor deposition process, compensating the power of the radio frequency signal according to the sampling signal of the reflected power;
The power compensation of the radio frequency signal satisfies the following conditions:
in the above formula, P 1 is the rf signal power of the first stage, P 2 is the rf signal power of the second stage, T M is the sampling time of M seconds after the start of the first stage process, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power during sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
In an alternative, the time compensation coefficient and the power compensation coefficient range from 0.1 to 10.
The invention also provides a chemical vapor deposition device capable of improving film formation uniformity, comprising:
a process chamber for loading a wafer and performing a chemical vapor deposition process on the wafer;
The radio frequency signal source is used for exciting the process gas in the process cavity to ionize and generate plasma through generating radio frequency signals, and performing chemical deposition reaction on the surface of the wafer;
and the reflected power compensation unit is connected with the radio frequency signal source and is used for compensating the time or the power of the radio frequency signal according to the chemical vapor deposition method in any scheme in the chemical vapor deposition process.
As described above, the chemical vapor deposition method and the device provided by the invention have the advantages that the reflected power is sampled in the chemical vapor deposition process, and the time or the power of the radio frequency signal is compensated, so that the uniformity of the thickness of the film formed by the chemical vapor deposition is obviously improved, and the production yield is improved.
Drawings
Fig. 1 is a flow chart of a chemical vapor deposition method according to a first embodiment of the invention.
Fig. 2 is a graph showing the reflected power versus time provided in the first embodiment of the present invention.
Fig. 3 is a graph showing wafer-to-wafer film thickness variation of the chemical vapor deposition method without compensation according to the first embodiment of the present invention.
Fig. 4 is a graph showing a wafer-to-wafer film thickness variation of the chemical vapor deposition method according to the third embodiment of the present invention.
Fig. 5 is a graph showing wafer-to-wafer film thickness variation in the chemical vapor deposition method according to the fifth embodiment of the present invention.
Fig. 6 is a graph showing wafer-to-wafer film thickness variation in the chemical vapor deposition method according to the sixth embodiment of the present invention.
Fig. 7 is a graph showing a wafer-to-wafer film thickness variation of the chemical vapor deposition method according to the seventh embodiment of the present invention.
Fig. 8 is a schematic view of a chemical vapor deposition apparatus according to a first embodiment of the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of the present invention, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
Please refer to fig. 1 to 8. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
Referring to fig. 1 to 3 and 8, the present embodiment provides a chemical vapor deposition method capable of improving film uniformity, comprising the following steps:
1) In the first stage of the chemical vapor deposition process, sampling the reflected power of the radio frequency signal;
2) In the second stage of the chemical vapor deposition process, compensating the time or power of the radio frequency signal according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
in the above formula, T is the total process time, T 1 is the first stage process time, T P is the sampling time, In order to compensate the process time, a is sampling interval time, pt is reflected power during sampling, P is radio frequency signal power, and C T is a time compensation coefficient;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, To compensate the rf signal power, T 1 is the first stage process time, T P is the sampling time, a is the sampling interval time, pt is the reflected power at the time of sampling, and C P is the power compensation coefficient.
In step 1), referring to step S1 of fig. 1 and fig. 2, in a first stage of a chemical vapor deposition process, reflected power of a Radio Frequency (RF) signal is sampled. In a plasma enhanced chemical vapor deposition process, the RF power supply may generate a large and unstable reflected power during ignition within the process chamber due to variations in chamber pressure and process gases employed. This reflected power can cause loss of rf energy, which in turn can lead to a decrease in the actual power of the process, affecting the film deposition rate.
As shown in fig. 2, is a graph of reflected power versus time. As can be seen from fig. 2, the reflected power increases sharply at the beginning of the ignition phase of the chemical vapor deposition process and gradually decreases to 0 after, for example, 1.5s as the process stabilizes. The reflected power fluctuates when different wafers are operated, irregular changes occur during each process, and differences occur in actual process power and film deposition rate of different wafers in each process. This results in a large variation in thickness uniformity from wafer to wafer for different wafers. The uniformity fluctuation among wafers can influence the process stability, so that the product yield rate can be fluctuated.
As shown in fig. 3, the relationship between the wafer-to-wafer film thickness of the chemical vapor deposition method is shown in the case of not using the rf signal time or power compensation method provided by the present invention (except that the conditions are the same). FIG. 3 is a graph showing the results of a conventional chemical vapor deposition method for growing thin films having a thickness in the range of about 200A to 800A. As can be seen from fig. 3, the film thickness variation from wafer to wafer is approximately ±4.16a, and this large variation affects the subsequent process quality and reduces the final chip yield, which is an unacceptable bias for most chip manufacturers.
In order to reduce wafer-to-wafer film thickness variation, the present invention proposes to compensate for the film thickness reduction caused by reflected power before the RF end of chemical vapor deposition. In this embodiment, by sampling the reflected power of the RF signal, the change of the reflected power with time in the ignition process of the RF power supply can be grasped in real time, so that the energy loss caused by the reflected power is compensated for pertinently in the subsequent process.
In step 2), referring to step S2 of fig. 1, in the second stage of the chemical vapor deposition process, the time or power of the rf signal is compensated according to the sampling signal of the reflected power.
In particular, the compensation of the power loss caused by the reflected power is classified into the time of the radio frequency signal or the power of the radio frequency signal. Wherein the time compensation for the radio frequency signal satisfies the following condition:
in the above formula, T is the total process time, T 1 is the first stage process time, T P is the sampling time, In order to compensate the process time, a is sampling interval time, pt is reflected power during sampling, P is radio frequency signal power, and C T is a time compensation coefficient;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, To compensate the rf signal power, T 1 is the first stage process time, T P is the sampling time, a is the sampling interval time, pt is the reflected power at the time of sampling, and C P is the power compensation coefficient.
As an example, the present embodiment compensates the time of the radio frequency signal according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
T=T1+CT*△T=T1+CT*TR
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate for process time, T R is the reflected power duration and C T is the time compensation coefficient.
As can be seen from the above equation, the compensation method of the present embodiment directly increases the time of the second stage process time to the total process time by collecting the duration of the reflected power, that is, the time from the start of the occurrence of the reflected power to the approach of 0 in fig. 2, and introducing the time compensation coefficient C T, so that the film thickness lost due to the reflected power is compensated. In another embodiment of the invention, the duration of the reflected power towards 0 can also be calculated directly and compensated directly as the second stage process time. However, in consideration of the nonlinear relationship between the deposition rate of the thin film and the RF power, the present embodiment introduces a time compensation coefficient C T to more precisely perform film thickness compensation.
The time compensation coefficient may be determined in a range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. In a preferred example, the time compensation factor ranges from 0.1 to 10, for example 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
As shown in fig. 8, the present embodiment further provides a chemical vapor deposition apparatus capable of improving film formation uniformity, comprising:
A process chamber 101 for loading a wafer 200 and performing a chemical vapor deposition process on the wafer 200;
A rf signal source 104 for generating rf signals to excite the process gases in the process chamber 101 to ionize and generate plasma, and performing chemical deposition reaction on the surface of the wafer 200;
the reflected power compensation unit 105 is connected to the rf signal source 104, and compensates the time or power of the rf signal during the chemical vapor deposition process according to the chemical vapor deposition method of the present embodiment.
As an example, as shown in fig. 8, a rf signal source 104 is provided in the present invention and is connected to the showerhead 102 and the wafer pedestal 103, respectively, to apply rf signals and generate plasma. The reflected power compensation unit 105 is connected to the rf signal source 104, collects the reflected power fed back by the rf signal source 104 in the process, and feeds back to the rf signal source 104 after calculating the compensation time or the compensation power according to the foregoing scheme, so that the rf signal source 104 compensates the time or the power of the rf signal in the subsequent process.
According to the chemical vapor deposition method and the chemical vapor deposition equipment, reflected power is sampled in the chemical vapor deposition process, and time or power of a radio frequency signal is creatively compensated, so that uniformity of film thickness of chemical vapor deposition between wafers is remarkably improved, for example, variation of film thickness between wafers can be controlled to be +/-1A, and production yield is improved.
Example two
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate for process time, T R is reflected power duration, a is sampling interval time, pt is reflected power at the time of sampling, P is radio frequency signal power, and C T is a time compensation coefficient.
As an example, in the present invention, the area of the reflected power versus time is calculated using integration, and the loss of the energy of the rf signal during the process is calculated, so as to compensate the application time of the rf signal or the magnitude of the rf power. Referring to fig. 2, the reflected power is not constant in its duration, but has a large fluctuation range, and this embodiment can obtain more accurate time compensation than the first embodiment which uses the reflected power duration only roughly as the compensation time.
The time compensation coefficient may be determined in a range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. In a preferred example, the time compensation factor ranges from 0.1 to 10, for example 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
Example III
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, To compensate the process time, a is the sampling interval time, pt is the reflected power during sampling, P is the rf signal power, and C T is the time compensation coefficient.
As an example, in the present invention, the area of the reflected power versus time is calculated using integration, and the loss of the energy of the rf signal during the process is calculated, so as to compensate the application time of the rf signal or the magnitude of the rf power. The difference between the present embodiment and the second embodiment is that the present embodiment compensates the reflected power generated by the RF signal within the time T 1, compensates the RF reflected power within the time 0 to T1 seconds, and compensates the RF start-up stage.
The time compensation coefficient may be determined in a range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. In a preferred example, the time compensation factor ranges from 0.1 to 10, for example 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
As shown in fig. 4, which is a graph of wafer-to-wafer film thickness variation using the chemical vapor deposition method according to the present embodiment, it is apparent from the graph that the wafer-to-wafer film thickness variation is greatly reduced from ±4.16a in fig. 3 without compensation to within ±2a.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
Example IV
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, T N is the sampling time of N seconds before the end of the first stage process, To compensate the process time, a is the sampling interval time, pt is the reflected power during sampling, P is the rf signal power, and C T is the time compensation coefficient.
As an example, in the present invention, the area of the reflected power versus time is calculated using integration, and the loss of the energy of the rf signal during the process is calculated, so as to compensate the application time of the rf signal or the magnitude of the rf power. The difference between the present embodiment and the second embodiment is that the present embodiment compensates the reflected power within the time T N before the end of the generation of the RF signal, compensates the RF reflected power within 0~T 1-TN seconds, and compensates the RF after the start and stabilization.
The time compensation coefficient may be determined in a range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. In a preferred example, the time compensation factor ranges from 0.1 to 10, for example 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
Example five
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the time compensation of the radio frequency signal satisfies the following conditions:
in the above formula, T is the total process time, T 1 is the first stage process time, T M is the sampling time of M seconds after the first stage process starts, T N is the sampling time of N seconds before the first stage process ends, For the first time of the compensation process,For the second compensation process time, a is the sampling interval time, pt is the reflected power when sampling, P 0 is the ignition power, P is the radio frequency signal power, C Ta is the first time compensation coefficient, and C Tb is the second time compensation coefficient.
As an example, in the present invention, the area of the reflected power versus time is calculated using integration, and the loss of the energy of the rf signal during the process is calculated, so as to compensate the application time of the rf signal or the magnitude of the rf power. In this embodiment, the compensation time of the RF signal RF is divided into two sections for compensation, the first section is C Ta*△Ta, which is the compensation from the start of the RF signal to T M, and the second section is C Tb*△Tb, which is the compensation of T N after the start of the RF signal and before the end of the first stage process, and the compensation time is used as the second stage process time for compensation.
As shown in fig. 5, which is a graph of wafer-to-wafer film thickness variation using the chemical vapor deposition method according to the present embodiment, it is apparent from the graph that the wafer-to-wafer film thickness variation is greatly reduced from ±4.16a in fig. 3 without compensation to within ±1a.
The respective time compensation coefficients may be determined in a range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. In a preferred example, the first time compensation coefficient C Ta and the second time compensation coefficient C Tb range from 0.1 to 10, such as 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
Example six
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the power of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, For the first compensation of the radio frequency signal power,For the second compensated rf signal power, T M is the sampling time M seconds after the first stage process starts, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power at the time of sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
As an example, in the present invention, the area of the reflected power versus time is calculated using integration, and the loss of the energy of the rf signal during the process is calculated, so as to compensate the application time of the rf signal or the magnitude of the rf power. In this embodiment, the compensation power of the RF signal RF is divided into two parts for compensation, the first compensation is C Pa*△Pa, which is the compensation from the start of the RF signal to T M, and the second compensation is C Pb*△Pb, which is the compensation of T N after the start of the RF signal and before the end of the first stage process, and the compensation power is added to the RF signal power for compensation within the second stage process time T N.
As shown in fig. 6, which is a graph of wafer-to-wafer film thickness variation using the chemical vapor deposition method according to the present embodiment, it is apparent from the graph that the wafer-to-wafer film thickness variation is greatly reduced from ±4.16a in fig. 3 without compensation to within ±1a.
The respective compensation factors may be determined in the range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. As an example, the first and second power compensation coefficients C Pa and C Pb range from 0.1 to 10, for example, 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
Example seven
The present embodiment provides another chemical vapor deposition method that can improve film formation uniformity, which can also be performed using the chemical vapor deposition apparatus shown in fig. 8. The difference between the first embodiment and the second embodiment is that in the second stage of the chemical vapor deposition process, the power of the radio frequency signal is compensated according to the sampling signal of the reflected power, and the power compensation of the radio frequency signal satisfies the following conditions:
in the above formula, P 1 is the rf signal power of the first stage, P 2 is the rf signal power of the second stage, T M is the sampling time of M seconds after the start of the first stage process, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power during sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
As an example, in the present embodiment, the radio frequency power is compensated by calculating the total energy loss due to the reflected power. The energy loss caused by the reflected power is divided into two parts, the first part isThe second part is . The total energy loss is divided by the second stage process time T N to obtain the second stage process with the need to compensate for the increased rf power.
As shown in fig. 7, which is a graph of wafer-to-wafer film thickness variation using the chemical vapor deposition method according to the present embodiment, it is apparent from the graph that the wafer-to-wafer film thickness variation is greatly reduced from ±4.16a in fig. 3 without compensation to within ±1a.
The respective compensation factors may be determined in the range from 0.1 to 100 according to the actual situation, for example, according to the film thickness and/or the film type to be deposited. As an example, the first and second power compensation coefficients C Pa and C Pb range from 0.1 to 10, for example, 0.3-1. The determination of the compensation coefficient can be adjusted by changing the film thickness on a plurality of wafers, so that the film thickness on each wafer is more consistent.
As an example, the sampling interval time a may be 4ms, or other sampling intervals may be selected according to practical situations.
Other implementation steps of the chemical vapor deposition method of the present embodiment are the same as those of the first embodiment, and please refer to the description of the first embodiment, so that a detailed description is omitted for brevity.
In summary, the invention provides a chemical vapor deposition method and a device capable of improving film formation uniformity, wherein the chemical vapor deposition method comprises the following steps of sampling reflected power of a radio frequency signal in a first stage of a chemical vapor deposition process, compensating time or power of the radio frequency signal according to a sampling signal of the reflected power in a second stage of the chemical vapor deposition process, and compensating time of the radio frequency signal under the following conditions: In the above formula, T is the total process time, T 1 is the first stage process time, T P is the sampling time, In order to compensate the process time, a is sampling interval time, pt is reflected power during sampling, P is radio frequency signal power, C T is time compensation coefficient, and the power compensation of the radio frequency signal meets the following conditions: In the above formula, P 1 is the RF signal power of the first stage, P 2 is the RF signal power of the second stage, To compensate the rf signal power, T 1 is the first stage process time, T P is the sampling time, a is the sampling interval time, pt is the reflected power at the time of sampling, and C P is the power compensation coefficient. The invention samples the reflected power in the chemical vapor deposition and creatively compensates the time or the power of the radio frequency signal, thereby remarkably improving the uniformity of the thickness of the chemical vapor deposition film and being beneficial to improving the production yield.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. A chemical vapor deposition method capable of improving film formation uniformity, comprising the steps of:
in the first stage of the chemical vapor deposition process, sampling the reflected power of the radio frequency signal;
In the second stage of the chemical vapor deposition process, the time or the power of the radio frequency signal is compensated according to the sampling signal of the reflected power, wherein the first stage is a period from the beginning of the reflected power to the trend of 0, and the second stage is a period from the end of the first stage to the end of the radio frequency signal;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is total process time, T 1 is first stage process time, T P is sampling time, deltaT is compensation process time, a is sampling interval time, pt is reflected power during sampling, P is radio frequency signal power, and C T is time compensation coefficient;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the rf signal power of the first stage, P 2 is the rf signal power of the second stage, Δp is the compensating rf signal power, T 1 is the first stage process time, T P is the sampling time, a is the sampling interval time, pt is the reflected power during sampling, and C P is the power compensation coefficient.
2. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
T=T1+CT*ΔT＝T1+CT*TR
In the above formula, T is the total process time, T 1 is the first stage process time, Δt is the compensation process time, T R is the reflected power duration, and C T is the time compensation coefficient.
3. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, Δt is the compensation process time, T R is the reflected power duration, a is the sampling interval time, pt is the reflected power at the time of sampling, P is the radio frequency signal power, and C T is the time compensation coefficient.
4. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, Δt is the compensation process time, a is the sampling interval time, pt is the reflected power during sampling, P is the radio frequency signal power, and C T is the time compensation coefficient.
5. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, T N is the sampling time N seconds before the end of the first stage process, Δt is the compensation process time, a is the sampling interval time, pt is the reflected power during sampling, P is the radio frequency signal power, and C T is the time compensation coefficient.
6. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the time of the radio frequency signal is compensated according to the sampling signal of the reflected power;
the time compensation of the radio frequency signal satisfies the following conditions:
In the above formula, T is the total process time, T 1 is the first stage process time, T M is the sampling time of M seconds after the first stage process starts, T N is the sampling time of N seconds before the first stage process ends, Δt a is the first compensation process time, Δt b is the second compensation process time, a is the sampling interval time, pt is the reflected power when sampling, P 0 is the ignition power, P is the radio frequency signal power, C Ta is the first time compensation coefficient, and C Tb is the second time compensation coefficient.
7. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the power of the radio frequency signal is compensated according to the sampling signal of the reflected power;
The power compensation of the radio frequency signal satisfies the following conditions:
In the above formula, P 1 is the rf signal power of the first stage, P 2 is the rf signal power of the second stage, Δp a is the first compensating rf signal power, Δp b is the second compensating rf signal power, T M is the sampling time M seconds after the start of the first stage process, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power during sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
8. The method according to claim 1, wherein in the second stage of the chemical vapor deposition process, the power of the radio frequency signal is compensated according to the sampling signal of the reflected power;
The power compensation of the radio frequency signal satisfies the following conditions:
in the above formula, P 1 is the rf signal power of the first stage, P 2 is the rf signal power of the second stage, T M is the sampling time of M seconds after the start of the first stage process, T N is the second stage process time, T is the total process time, a is the sampling interval time, pt is the reflected power during sampling, C Pa is the first power compensation coefficient, and C Pb is the second power compensation coefficient.
9. The chemical vapor deposition method of claim 1, wherein the time compensation coefficient and the power compensation coefficient range from 0.1 to 10.
10. A chemical vapor deposition apparatus for improving film formation uniformity, comprising:
a process chamber for loading a wafer and performing a chemical vapor deposition process on the wafer;
The radio frequency signal source is used for exciting the process gas in the process cavity to ionize and generate plasma through generating radio frequency signals, and performing chemical deposition reaction on the surface of the wafer;
A reflected power compensation unit connected to the rf signal source, for compensating the time or power of the rf signal in the chemical vapor deposition process according to the chemical vapor deposition method of any one of claims 1 to 9.
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