CN118588815B - Preparation method for improving TOPCon battery grid line hidden crack and battery - Google Patents
Preparation method for improving TOPCon battery grid line hidden crack and battery Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 230000002950 deficient Effects 0.000 claims abstract description 95
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- 238000005516 engineering process Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 14
- 238000013532 laser treatment Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 15
- 230000008439 repair process Effects 0.000 abstract description 10
- 238000013082 photovoltaic technology Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
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- 238000004519 manufacturing process Methods 0.000 description 8
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
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- 238000001953 recrystallisation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 2
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- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
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Abstract
本发明涉及光伏技术领域，公开了一种用于改善TOPCon电池栅线隐裂的制备方法及电池，包括如下步骤：（1）将栅线隐裂的不良品在380~420℃温度下进行高温处理；（2）高温处理完成后，将处理后栅线隐裂的不良品取出；（3）使用LECO技术对处理后栅线隐裂的不良品的正面金属浆料进行激光处理。本发明通过重新对栅线隐裂的不良品进行高温处理和LECO技术的结合处理，能够将已经产生的栅线隐裂缺陷进行修复，提高电池的良品率。
The present invention relates to the field of photovoltaic technology, and discloses a preparation method and a battery for improving grid line cracks of TOPCon batteries, comprising the following steps: (1) subjecting defective products with grid line cracks to high temperature treatment at a temperature of 380-420°C; (2) after the high temperature treatment, taking out the defective products with grid line cracks after the treatment; (3) using LECO technology to laser treat the front metal paste of the defective products with grid line cracks after the treatment. The present invention can repair the grid line crack defects that have already occurred by re-treating the defective products with grid line cracks with high temperature treatment and combining LECO technology, thereby improving the yield rate of the battery.
Description
技术领域Technical Field
本发明涉及光伏技术领域，具体而言，涉及一种用于改善TOPCon电池栅线隐裂的制备方法及电池。The present invention relates to the field of photovoltaic technology, and in particular to a preparation method and a battery for improving hidden cracks in grid lines of a TOPCon battery.
背景技术Background Art
随着光伏行业产业化、追求产能最大化，在供过于求的市场情况下，企业产品的良率成为企业能否在激烈的竞争环境中生存的基本条件，因此产品良率对于企业来说至关重要。With the industrialization of the photovoltaic industry and the pursuit of maximum production capacity, in the case of oversupply in the market, the yield rate of a company's products has become a basic condition for whether the company can survive in the fierce competition environment. Therefore, product yield is crucial for the company.
另外，电池片处于光伏储能行业的中游，太阳能电池片需要出售到下游组件端，而太阳能电池片作为太阳能光伏组件的核心部件之一，其质量直接影响到光伏组件的性能，因此电池片的效率和良率直接决定了光伏组件的效率和寿命。In addition, solar cells are in the midstream of the photovoltaic energy storage industry. Solar cells need to be sold to downstream components. As one of the core components of solar photovoltaic modules, the quality of solar cells directly affects the performance of photovoltaic modules. Therefore, the efficiency and yield of solar cells directly determine the efficiency and life of photovoltaic modules.
目前TOPCon电池在洁净度达千级的无尘车间中量产，并且制成管控极为严苛的条件下，仍然会产生较多EL类型为栅线隐裂的不良品，在电池整个良率评价体系中类型为栅线隐裂EL的不良率达到了3%，是光伏行业制作TOPCon电池一直以来在技术上难以攻克的技术壁垒。Currently, TOPCon batteries are mass-produced in dust-free workshops with a cleanliness level of 1,000 and are produced under extremely strict production and control conditions. However, a large number of defective products with EL type hidden cracks in the grid lines are still produced. In the entire battery yield evaluation system, the defective rate of EL type hidden cracks in the grid lines has reached 3%, which is a technical barrier that has been difficult to overcome in the photovoltaic industry in the production of TOPCon batteries.
有鉴于此，特提出本申请。In view of this, this application is hereby filed.
发明内容Summary of the invention
现有技术存在的问题为TOPCon电池在量产过程中会产生较多不良率达到3%的EL类型为栅线隐裂的不良品，本发明为了解决上述问题，提供一种用于改善TOPCon电池栅线隐裂的制备方法及电池，通过重新对栅线隐裂的不良品进行高温处理和LECO技术的结合处理，能够将已经产生的栅线隐裂缺陷进行修复，提高电池的良品率。The problem with the prior art is that TOPCon batteries will produce a large number of defective products with EL type grid line cracks with a defective rate of up to 3% during the mass production process. In order to solve the above problem, the present invention provides a preparation method and a battery for improving the grid line cracks of TOPCon batteries. By re-treating the defective products with grid line cracks with high temperature and combining them with LECO technology, the grid line crack defects that have already occurred can be repaired, thereby improving the yield rate of the battery.
本发明通过下述技术方案实现：The present invention is achieved through the following technical solutions:
第一方面，本发明提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：In a first aspect, the present invention provides a preparation method for improving hidden cracks in a TOPCon battery grid line, comprising the following steps:
（1）将栅线隐裂的不良品在380~420℃温度下进行高温处理；(1) The defective products with hidden cracks in the gate lines are subjected to high temperature treatment at a temperature of 380~420℃;
（2）高温处理完成后，将处理后栅线隐裂的不良品取出；(2) After the high temperature treatment is completed, the defective products with hidden cracks in the gate lines after treatment are removed;
（3）使用LECO技术对处理后栅线隐裂的不良品的正面金属浆料进行激光处理。(3) Use LECO technology to laser process the front metal paste of defective products with hidden cracks in the rear gate line.
本发明通过重新对栅线隐裂的不良品进行高温处理和LECO技术的结合处理，能够将已经产生的栅线隐裂缺陷进行修复，提高电池的良品率。The present invention can repair the grid line hidden crack defects that have already occurred and improve the yield rate of the battery by re-processing the defective products with grid line hidden cracks with high temperature and LECO technology.
本发明将栅线隐裂的不良品在马弗炉进行高温处理，再次进行LECO技术处理，经过加载反向电压并经激光扫描，激光诱导产生的非平衡载流子持续轰击银颗粒与硅半导体界面形成良好的接触，同时激光的光斑宽度为120~130um，栅线宽度为20±2um，那意味着在进行激光扫描时是全覆盖式的再结晶，因此对栅线区域的栅线隐裂产生了修复作用。The present invention subjects defective products with hidden cracks in the gate lines to high-temperature treatment in a muffle furnace, and then performs LECO technology treatment again. After loading a reverse voltage and laser scanning, the non-equilibrium carriers induced by the laser continuously bombard the silver particles and form a good contact with the silicon semiconductor interface. At the same time, the laser spot width is 120~130um, and the gate line width is 20±2um, which means that full coverage recrystallization occurs during laser scanning, thereby repairing the hidden cracks in the gate line area.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（1）中，所述高温处理时间为11~13min。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines, wherein in step (1), the high temperature treatment time is 11 to 13 minutes.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（1）中，所述高温处理的升温速率为19~21℃/min。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines, wherein in step (1), the heating rate of the high temperature treatment is 19-21° C./min.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（2）中，温度降至95~105℃时，将处理后栅线隐裂的不良品取出。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of TOPCon batteries. In step (2), when the temperature drops to 95-105° C., defective products with hidden cracks in the grid lines are removed.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的反向电压参数设置为12~18V。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery. In step (3), the reverse voltage parameter of the laser treatment is set to 12-18V.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的功率参数设置为16~19%。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the power parameter of the laser treatment is set to 16-19%.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的反向电压参数设置为14V。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery. In step (3), the reverse voltage parameter of the laser treatment is set to 14V.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的功率参数设置为17%。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the power parameter of the laser processing is set to 17%.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理采用激光辅助烧结设备。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the laser treatment uses laser-assisted sintering equipment.
第二方面，本发明还提供一种良品率高的TOPCon电池，采用所述用于改善TOPCon电池栅线隐裂的制备方法制得。In a second aspect, the present invention further provides a TOPCon battery with a high yield rate, which is prepared by using the preparation method for improving hidden cracks in the grid lines of a TOPCon battery.
本发明与现有技术相比，具有如下的优点和有益效果：Compared with the prior art, the present invention has the following advantages and beneficial effects:
1、本发明实施例提供的一种用于改善TOPCon电池栅线隐裂的制备方法及电池，通过重新对栅线隐裂的不良品进行高温处理和LECO技术的结合处理，能够将已经产生的栅线隐裂缺陷进行修复，提高电池的良品率；1. A preparation method and a battery for improving grid line cracking of a TOPCon battery provided in an embodiment of the present invention can repair the grid line cracking defects that have occurred by re-treating defective products with grid line cracking with high temperature and combining LECO technology, thereby improving the yield rate of the battery;
2、本发明实施例提供的一种用于改善TOPCon电池栅线隐裂的制备方法及电池，将栅线隐裂的不良品在马弗炉进行高温处理，再次进行LECO技术处理，经过加载反向电压并经激光扫描，激光诱导产生的非平衡载流子持续轰击银颗粒与硅半导体界面形成良好的接触，同时激光的光斑宽度为120~130um，栅线宽度为20±2um，那意味着在进行激光扫描时是全覆盖式的再结晶，因此对栅线区域的栅线隐裂产生了修复作用；2. A preparation method and a battery for improving the hidden cracks in the grid lines of a TOPCon battery provided in an embodiment of the present invention, wherein defective products with hidden cracks in the grid lines are subjected to high temperature treatment in a muffle furnace, and then subjected to LECO technology treatment again. After reverse voltage is applied and laser scanning is performed, the non-equilibrium carriers induced by the laser continuously bombard the silver particles and form a good contact with the silicon semiconductor interface. At the same time, the spot width of the laser is 120-130um, and the grid line width is 20±2um, which means that full coverage recrystallization occurs during laser scanning, thereby repairing the hidden cracks in the grid line area;
3、本发明实施例提供的一种用于改善TOPCon电池栅线隐裂的制备方法及电池，可以使得不良品栅线隐裂降低至0.1%以下，保证企业EL类型为栅线隐裂的不良品率实现非常有效的控制，进而降低产线的不良品率，提高良率和生产效率，节约人力工时以及耗材成本。3. The preparation method and battery for improving the hidden cracks in the grid lines of TOPCon batteries provided in the embodiments of the present invention can reduce the hidden cracks in the grid lines of defective products to below 0.1%, ensuring that the defective rate of the company's EL type with hidden cracks in the grid lines is very effectively controlled, thereby reducing the defective rate of the production line, improving the yield and production efficiency, and saving manpower hours and consumables costs.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明示例性实施方式的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
图1为本发明实施例1提供的EL测试图像；FIG1 is an EL test image provided by Example 1 of the present invention;
图2为本发明实施例2提供的EL测试图像；FIG2 is an EL test image provided by Example 2 of the present invention;
图3为本发明实施例3提供的EL测试图像；FIG3 is an EL test image provided by Example 3 of the present invention;
图4为本发明对比例1提供的EL测试图像；FIG4 is an EL test image provided by Comparative Example 1 of the present invention;
图5为本发明对比例2提供的EL测试图像；FIG5 is an EL test image provided by Comparative Example 2 of the present invention;
图6为本发明对比例3提供的EL测试图像；FIG6 is an EL test image provided by Comparative Example 3 of the present invention;
图7为本发明对比例4提供的EL测试图像。FIG. 7 is an EL test image provided by Comparative Example 4 of the present invention.
具体实施方式DETAILED DESCRIPTION
为使本发明的目的、技术方案和优点更加清楚明白，下面结合实施例和附图，对本发明作进一步的详细说明，本发明的示意性实施方式及其说明仅用于解释本发明，并不作为对本发明的限定。In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary implementation modes of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.
在以下描述中，为了提供对本发明的透彻理解阐述了大量特定细节。然而，对于本领域普通技术人员显而易见的是：不必采用这些特定细节来实行本发明。在其他实施例中，为了避免混淆本发明，未具体描述公知材料或方法。In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present invention. However, it is apparent to one of ordinary skill in the art that these specific details need not be employed to practice the present invention. In other embodiments, in order to avoid obscuring the present invention, well-known materials or methods are not specifically described.
在整个说明书中，对“一个实施例”、“实施例”、“一个示例”或“示例”的提及意味着：结合该实施例或示例描述的特定特征、结构或特性被包含在本本发明至少一个实施例中。因此，在整个说明书的各个地方出现的短语“一个实施例”、“实施例”、“一个示例”或“示例”不一定都指同一实施例或示例。此外，可以以任何适当的组合和、或子组合将特定的特征、结构或特性组合在一个或多个实施例或示例中。这里使用的术语“和/或”包括一个或多个相关列出的项目的任何和所有组合。Throughout the specification, references to "one embodiment," "an embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment of the present invention. Therefore, the phrases "one embodiment," "an embodiment," "an example," or "an example" appearing in various places throughout the specification do not necessarily all refer to the same embodiment or example. In addition, particular features, structures, or characteristics may be combined in one or more embodiments or examples in any suitable combination and/or subcombination. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
本申请所公开的“范围”以下限和上限的形式来限定，给定范围是通过选定一个下限和一个上限进行限定的，选定的下限和上限限定了特别范围的边界。这种方式进行限定的范围可以是包括端值或不包括端值的，并且可以进行任意地组合，即任何下限可以与任何上限组合形成一个范围。在本申请中，除非有其他说明，数值范围“a～b”表示a到b之间的任意实数组合的缩略表示，其中a和b都是实数。The "range" disclosed in this application is defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of the particular range. The range defined in this way can be inclusive or exclusive of the end values, and can be combined arbitrarily, that is, any lower limit can be combined with any upper limit to form a range. In this application, unless otherwise specified, the numerical range "a to b" represents an abbreviation of any real number combination between a and b, where a and b are both real numbers.
目前TOPCon电池在洁净度达千级的无尘车间中量产，并且制成管控极为严苛的条件下，仍然会产生较多EL类型为栅线隐裂的不良品，在电池整个良率评价体系中类型为栅线隐裂EL的不良率达到了3%，是光伏行业制作TOPCon电池一直以来在技术上难以攻克的技术壁垒。Currently, TOPCon batteries are mass-produced in dust-free workshops with a cleanliness level of 1,000 and are produced under extremely strict production and control conditions. However, a large number of defective products with EL type hidden cracks in the grid lines are still produced. In the entire battery yield evaluation system, the defective rate of EL type hidden cracks in the grid lines has reached 3%, which is a technical barrier that has been difficult to overcome in the photovoltaic industry in the production of TOPCon batteries.
为了解决上述问题，本发明提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：In order to solve the above problems, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines, comprising the following steps:
（1）将栅线隐裂的不良品在380~420℃温度下进行高温处理；(1) The defective products with hidden cracks in the gate lines are subjected to high temperature treatment at a temperature of 380~420℃;
（2）高温处理完成后，将处理后栅线隐裂的不良品取出；(2) After the high temperature treatment is completed, the defective products with hidden cracks in the gate lines after treatment are removed;
（3）使用LECO技术对处理后栅线隐裂的不良品的正面金属浆料进行激光处理。(3) Use LECO technology to laser process the front metal paste of defective products with hidden cracks in the rear gate line.
本发明通过重新对栅线隐裂的不良品进行高温处理和LECO技术的结合处理，能够将已经产生的栅线隐裂缺陷进行修复，提高电池的良品率。The present invention can repair the grid line hidden crack defects that have already occurred and improve the yield rate of the battery by re-processing the defective products with grid line hidden cracks with high temperature and LECO technology.
本发明将栅线隐裂的不良品在马弗炉进行高温处理，再次进行LECO技术处理，经过加载反向电压并经激光扫描，激光诱导产生的非平衡载流子持续轰击银颗粒与硅半导体界面形成良好的接触，同时激光的光斑宽度为120~130um，栅线宽度为20±2um，那意味着在进行激光扫描时是全覆盖式的再结晶，因此对栅线区域的栅线隐裂产生了修复作用。The present invention subjects defective products with hidden cracks in the gate lines to high-temperature treatment in a muffle furnace, and then performs LECO technology treatment again. After loading a reverse voltage and laser scanning, the non-equilibrium carriers induced by the laser continuously bombard the silver particles and form a good contact with the silicon semiconductor interface. At the same time, the laser spot width is 120~130um, and the gate line width is 20±2um, which means that full coverage recrystallization occurs during laser scanning, thereby repairing the hidden cracks in the gate line area.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（1）中，所述高温处理时间为11~13min。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines, wherein in step (1), the high temperature treatment time is 11 to 13 minutes.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（1）中，所述高温处理的升温速率为19~21℃/min。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines, wherein in step (1), the heating rate of the high temperature treatment is 19-21° C./min.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（2）中，温度降至95~105℃时，将处理后栅线隐裂的不良品取出。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of TOPCon batteries. In step (2), when the temperature drops to 95-105° C., defective products with hidden cracks in the grid lines are removed.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的反向电压参数设置为12~18V。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery. In step (3), the reverse voltage parameter of the laser treatment is set to 12-18V.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的功率参数设置为16~19%。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the power parameter of the laser treatment is set to 16-19%.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的反向电压参数设置为14V。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery. In step (3), the reverse voltage parameter of the laser treatment is set to 14V.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理的功率参数设置为17%。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the power parameter of the laser processing is set to 17%.
在某一具体实施方式中，本发明一种用于改善TOPCon电池栅线隐裂的制备方法，步骤（3）中，所述激光处理采用激光辅助烧结设备。In a specific embodiment, the present invention provides a preparation method for improving hidden cracks in TOPCon battery grid lines. In step (3), the laser treatment uses laser-assisted sintering equipment.
第二方面，本发明还提供一种良品率高的TOPCon电池，采用所述用于改善TOPCon电池栅线隐裂的制备方法制得。In a second aspect, the present invention further provides a TOPCon battery with a high yield rate, which is prepared by using the preparation method for improving hidden cracks in the grid lines of a TOPCon battery.
实施例1Example 1
本发明实施例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：The embodiment of the present invention provides a preparation method for improving hidden cracks in grid lines of TOPCon batteries, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在400℃，恒温12min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 400℃, keep the temperature constant for 12 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为14V，功率设置为17%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 14V and the power to 17% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图1所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图1中可以看出，本实施例的栅线隐裂不良品经过高温+LECO处理后，栅线隐裂的不良品的缺陷得到修复，隐裂完全消失，因此产品的良率得到了提升。As shown in Figure 1, from left to right are the EL test graphs of defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test graphs of defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 1 that after the defective products with hidden cracks in the gate line of this embodiment are treated with high temperature + LECO, the defects of the defective products with hidden cracks in the gate line are repaired, and the hidden cracks completely disappear, so the yield of the product is improved.
实施例2Example 2
本发明实施例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：The embodiment of the present invention provides a preparation method for improving hidden cracks in grid lines of TOPCon batteries, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在380℃，恒温12min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 380℃, keep the temperature constant for 12 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为12V，功率设置为16%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 12V, and the power to 16% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图2所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图2中可以看出，本实施例的栅线隐裂不良品经过高温+LECO处理后，栅线隐裂的不良品的缺陷得到修复，隐裂基本消失，因此产品的良率得到了提升。As shown in Figure 2, from left to right are the EL test graphs of defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test graphs of defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 2 that after the defective products with hidden cracks in the gate line of this embodiment are treated with high temperature + LECO, the defects of the defective products with hidden cracks in the gate line are repaired, and the hidden cracks basically disappear, so the yield of the product is improved.
实施例3Example 3
本发明实施例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：The embodiment of the present invention provides a preparation method for improving hidden cracks in grid lines of TOPCon batteries, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在420℃，恒温12min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 420℃, keep the temperature constant for 12 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为18V，功率设置为19%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 18V and the power to 19% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图3所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图3中可以看出，本实施例的栅线隐裂不良品经过高温+LECO处理后，栅线隐裂的不良品的缺陷得到修复，隐裂完全消失，因此产品的良率得到了提升。As shown in Figure 3, from left to right are the EL test graphs of defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test graphs of defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 3 that after the defective products with hidden cracks in the gate line of this embodiment are treated with high temperature + LECO, the defects of the defective products with hidden cracks in the gate line are repaired, and the hidden cracks completely disappear, so the yield of the product is improved.
对比例1Comparative Example 1
本对比例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：This comparative example provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在430℃，恒温12min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 430℃, keep the temperature constant for 12 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为14V，功率设置为17%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 14V and the power to 17% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图4所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图4中可以看出，本对比例的栅线隐裂不良品经过430℃高温+LECO处理后，栅线隐裂不良品的缺陷修复并不明显，隐裂仍然存在，产品的良率并未得到提升，这说明过高的温度处理反而无法对栅线隐裂缺陷起到修复作用。As shown in Figure 4, from left to right are the EL test graphs of the defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of the defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test graphs of the defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 4 that after the defective products with hidden cracks in the gate line of this comparative example were treated with 430℃ high temperature + LECO, the defect repair of the defective products with hidden cracks in the gate line was not obvious, the hidden cracks still existed, and the yield of the product was not improved, which shows that the treatment at too high a temperature cannot repair the defects of the hidden cracks in the gate line.
对比例2Comparative Example 2
本对比例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：This comparative example provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在370℃，恒温12min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 370℃, keep the temperature constant for 12 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为14V，功率设置为17%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 14V and the power to 17% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图5所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图5中可以看出，本对比例的栅线隐裂不良品经过370℃高温+LECO处理后，栅线隐裂不良品的缺陷未得到任何修复，隐裂仍然存在，产品的良率并未得到提升，这说明过低的温度处理也无法对栅线隐裂缺陷起到修复作用。As shown in Figure 5, from left to right are the EL test images of the defective products with hidden cracks in the original process after being treated with LECO technology, the EL test images of the defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test images of the defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 5 that after the defective products with hidden cracks in the gate line of this comparative example were treated with 370℃ high temperature + LECO, the defects of the defective products with hidden cracks in the gate line were not repaired at all, the hidden cracks still existed, and the yield of the product was not improved, which shows that too low temperature treatment cannot repair the defects of hidden cracks in the gate line.
对比例3Comparative Example 3
本对比例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：This comparative example provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在400℃，恒温20min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature to 400℃, keep the temperature constant for 20 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为14V，功率设置为17%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 14V and the power to 17% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图6所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图6中可以看出，本对比例的栅线隐裂不良品经过高温20min+LECO处理后，栅线隐裂不良品的缺陷修复不明显，隐裂仍然存在，产品的良率并未得到提升，这说明高温处理时间过长也无法对栅线隐裂缺陷起到修复作用。As shown in Figure 6, from left to right are the EL test graphs of the defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of the defective products with hidden cracks in the gate line after being taken out after re-high temperature treatment, and the EL test graphs of the defective products with hidden cracks in the gate line after being treated with LECO technology again after high temperature treatment. It can be seen from Figure 6 that after the defective products with hidden cracks in the gate line of this comparative example were treated with high temperature for 20 minutes + LECO, the defect repair of the defective products with hidden cracks in the gate line was not obvious, the hidden cracks still existed, and the yield of the product was not improved, which shows that the high temperature treatment time is too long and cannot repair the hidden cracks in the gate line.
对比例4Comparative Example 4
本对比例提供一种用于改善TOPCon电池栅线隐裂的制备方法，包括如下步骤：This comparative example provides a preparation method for improving hidden cracks in the grid lines of a TOPCon battery, comprising the following steps:
（1）将IV测试机分选出来的EL类型为栅线隐裂的不良品在常温下放入马弗炉内，关闭炉门，将目标温度设置在400℃，恒温5min，升温速率为20℃/min，进行高温处理；(1) Put the defective products with EL type grid line cracks sorted by the IV tester into a muffle furnace at room temperature, close the furnace door, set the target temperature at 400℃, keep the temperature constant for 5 minutes, and increase the temperature at a rate of 20℃/min for high temperature treatment;
（2）高温处理完成后，当温度降至100℃后将栅线隐裂的不良品取出；(2) After the high-temperature treatment is completed, when the temperature drops to 100°C, the defective products with hidden cracks in the gate lines are removed;
（3）使用LECO技术打激光，（海目星）激光辅助烧结（LAS）设备，参数设置反向电压为14V，功率设置为17%对栅线隐裂的不良品的正面金属浆料进行激光扫描，使硅片正面的浆料和硅片形成较好的欧姆接触，同时利用荷电效应来优化栅线电极、改善接触电阻并实现高效率太阳能光伏电池的输出；(3) Use LECO technology to laser, (Haimuxing) laser assisted sintering (LAS) equipment, set the reverse voltage to 14V and the power to 17% to perform laser scanning on the front metal paste of defective products with hidden cracks in the gate line, so that the paste on the front of the silicon wafer forms a good ohmic contact with the silicon wafer, and use the charging effect to optimize the gate electrode, improve the contact resistance and achieve high-efficiency solar photovoltaic cell output;
（4）将经过LECO技术处理的栅线隐裂的不良品，再进行EL测试。(4) Defective products with hidden cracks in the grid lines that have been processed by LECO technology will be subjected to EL testing again.
如图7所示，从左至右依次为原工艺经LECO技术处理后栅线隐裂不良品的EL测试图、栅线隐裂不良品重新高温处理取出后的EL测试图、栅线隐裂不良品高温处理后再次LECO技术处理后的EL测试图。从图7中可以看出，本对比例的栅线隐裂不良品经过高温5min+LECO处理后，栅线隐裂不良品的缺陷完全未得到修复，隐裂仍然存在，产品的良率并未得到提升，这说明高温处理时间过短也无法对栅线隐裂缺陷起到修复作用。As shown in Figure 7, from left to right are the EL test graphs of defective products with hidden cracks in the original process after being treated with LECO technology, the EL test graphs of defective products with hidden cracks in the gate line after being taken out after high-temperature treatment, and the EL test graphs of defective products with hidden cracks in the gate line after being treated with LECO technology again after high-temperature treatment. It can be seen from Figure 7 that after the defective products with hidden cracks in the gate line of this comparative example were treated with high temperature for 5 minutes + LECO, the defects of the defective products with hidden cracks in the gate line were not completely repaired, the hidden cracks still existed, and the yield of the product was not improved, which shows that the high-temperature treatment time is too short to repair the defects of the hidden cracks in the gate line.
以上所述的具体实施方式，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施方式而已，并不用于限定本发明的保护范围，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
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