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CN118591870A - Laminated film for forming a monolithic body, method for manufacturing the same, and method for manufacturing a semiconductor device - Google Patents

Laminated film for forming a monolithic body, method for manufacturing the same, and method for manufacturing a semiconductor device Download PDF

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Publication number
CN118591870A
CN118591870A CN202280088419.XA CN202280088419A CN118591870A CN 118591870 A CN118591870 A CN 118591870A CN 202280088419 A CN202280088419 A CN 202280088419A CN 118591870 A CN118591870 A CN 118591870A
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China
Prior art keywords
film
chip
pressure
sensitive adhesive
support
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Inventor
桥本裕贵
谷口纮平
黑田孝博
尾崎义信
大河原奎佑
中村奏美
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Resonac Corp
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Resonac Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Laminated Bodies (AREA)
  • Die Bonding (AREA)

Abstract

本发明公开一种单片体形成用层叠膜。该单片体形成用层叠膜依次具备：第1支撑膜；第1压敏胶黏剂层，其为非紫外线固化型压敏胶黏剂层；单片体形成用膜，通过切割而单片化成多个单片体；第2压敏胶黏剂层；及第2支撑膜。单片体形成用膜是具有热固性树脂层及刚性材料层的膜，所述刚性材料层具有高于热固性树脂层的刚性。单片体形成用膜中的刚性材料层层叠于第1压敏胶黏剂层上。

The present invention discloses a laminated film for forming a monolithic body. The laminated film for forming a monolithic body comprises, in order: a first support film; a first pressure-sensitive adhesive layer, which is a non-ultraviolet curing pressure-sensitive adhesive layer; a monolithic body forming film, which is singulated into a plurality of monolithic bodies by cutting; a second pressure-sensitive adhesive layer; and a second support film. The monolithic body forming film is a film having a thermosetting resin layer and a rigid material layer, wherein the rigid material layer has a higher rigidity than the thermosetting resin layer. The rigid material layer in the monolithic body forming film is laminated on the first pressure-sensitive adhesive layer.

Description

单片体形成用层叠膜及其制造方法、以及半导体装置的制造 方法Laminated film for forming a monolithic body, method for manufacturing the same, and method for manufacturing a semiconductor device

技术领域Technical Field

本发明有关一种单片体形成用层叠膜及其制造方法、以及半导体装置的制造方法，尤其有关一种具有支石墓结构的半导体装置，上述支石墓结构包括：基板；第1芯片，配置于基板上；多个支撑片，配置于基板上且第1芯片的周围；及第2芯片，通过多个支撑片支撑且以覆盖第1芯片的方式配置。The present invention relates to a laminated film for forming a monolithic body, a method for manufacturing the same, and a method for manufacturing a semiconductor device, and more particularly to a semiconductor device having a dolmen structure, the dolmen structure comprising: a substrate; a first chip arranged on the substrate; a plurality of supporting sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of supporting sheets and arranged so as to cover the first chip.

背景技术Background Art

近年来，在半导体装置区域中，要求高积体、小型化及高速化，作为半导体装置的一形态，在配置于基板上的控制器芯片上层叠半导体芯片的结构备受关注。例如，专利文献1公开了半导体晶粒组件，其包括：控制器晶粒；及记忆体晶粒，在控制器晶粒上通过支撑部件来支撑。专利文献1的图1A中图示的半导体组件100能够具有支石墓结构。半导体组件100具备：封装基板402；控制器晶粒103，配置于其表面上；记忆体晶粒106a、106b，配置于控制器晶粒103的上方；及支撑部件130a、130b，支撑记忆体晶粒106a。In recent years, in the semiconductor device area, high integration, miniaturization and high speed are required. As a form of semiconductor devices, a structure in which semiconductor chips are stacked on a controller chip arranged on a substrate has attracted much attention. For example, Patent Document 1 discloses a semiconductor chip component, which includes: a controller chip; and a memory chip supported by a supporting member on the controller chip. The semiconductor component 100 illustrated in FIG. 1A of Patent Document 1 can have a dolmen structure. The semiconductor component 100 includes: a package substrate 402; a controller chip 103 arranged on its surface; memory chips 106a, 106b arranged above the controller chip 103; and supporting members 130a, 130b supporting the memory chip 106a.

专利文献1公开有作为支撑部件(支撑片)能够使用硅等半导体材料，更具体而言，能够使用切割半导体晶圆而获得的半导体材料的碎片。Patent Document 1 discloses that a semiconductor material such as silicon can be used as a supporting member (supporting sheet), and more specifically, fragments of a semiconductor material obtained by dicing a semiconductor wafer can be used.

并且，专利文献2公开了作为支撑部件(支撑片)，代替硅等半导体材料，能够使用以树脂材料为主要成分的树脂膜。作为树脂膜，例如例示有依次具有2个热固性树脂层及刚性材料层的三层膜，该刚性材料层以夹着该热固性树脂层的方式配置，具有高于该热固性树脂层的刚性。Furthermore, Patent Document 2 discloses that a resin film having a resin material as a main component can be used as a supporting member (supporting sheet) instead of a semiconductor material such as silicon. As the resin film, for example, a three-layer film having two thermosetting resin layers and a rigid material layer in sequence is exemplified, and the rigid material layer is arranged in a manner of sandwiching the thermosetting resin layer and has a higher rigidity than the thermosetting resin layer.

以往技术文献Previous technical literature

专利文献Patent Literature

专利文献1：日本特表2017-515306号公报Patent Document 1: Japanese Patent Application No. 2017-515306

专利文献2：国际公开第2020/217404号Patent Document 2: International Publication No. 2020/217404

发明内容Summary of the invention

发明要解决的技术课题Technical issues to be solved by the invention

根据本发明人等的研究发现，切割作为公知的三层膜的树脂膜而单片化时，有时出现在最表面侧的热固性树脂层与刚性材料层之间发生剥离及在切割线的切断面(侧面)产生被称为毛边的切削屑等不良情况。According to the research conducted by the inventors, when a resin film known as a three-layer film is cut into individual pieces, peeling sometimes occurs between the thermosetting resin layer and the rigid material layer on the outermost side, and cutting chips called burrs are generated on the cut surface (side) of the cutting line.

因此，本发明的主要目的为提供一种单片体形成用层叠膜，在具备通过切割而单片化成多个单片体的单片体形成用膜的单片体形成用层叠膜中，能够充分抑制切割单片体形成用膜而单片化时的不良情况。Therefore, the main object of the present invention is to provide a laminated film for forming a single piece, in which the laminated film for forming a single piece is provided with a single piece which is singulated into a plurality of single pieces by dicing, and in which the defects when the single piece is diced and singulated can be sufficiently suppressed.

用于解决技术课题的手段Means for solving technical problems

本发明的一侧面有关一种单片体形成用层叠膜，其具备通过切割而单片化成多个单片体的单片体形成用膜。该单片体形成用层叠膜依次具备：第1支撑膜；第1压敏胶黏剂层，其为非紫外线固化型压敏胶黏剂层；单片体形成用膜；第2压敏胶黏剂层及第2支撑膜。单片体形成用膜是具有热固性树脂层及刚性材料层的膜，所述刚性材料层具有高于热固性树脂层的刚性。刚性材料层例如可以是具有高于热固性树脂层的刚性的树脂材料层或具有高于热固性树脂层的刚性的金属层。单片体形成用膜可以是双层膜。单片体形成用膜中的刚性材料层层叠于第1压敏胶黏剂层上。刚性材料层可以是具有高于热固性树脂层的刚性的树脂层，例如可以是聚酰亚胺层。One aspect of the present invention relates to a laminated film for forming a monolithic body, which comprises a monolithic body forming film that is monolithicized into a plurality of monolithic bodies by cutting. The monolithic body forming laminated film comprises, in order: a first support film; a first pressure-sensitive adhesive layer, which is a non-ultraviolet curing pressure-sensitive adhesive layer; a monolithic body forming film; a second pressure-sensitive adhesive layer and a second support film. The monolithic body forming film is a film having a thermosetting resin layer and a rigid material layer, wherein the rigid material layer has a higher rigidity than the thermosetting resin layer. The rigid material layer may be, for example, a resin material layer having a higher rigidity than the thermosetting resin layer or a metal layer having a higher rigidity than the thermosetting resin layer. The monolithic body forming film may be a double-layer film. The rigid material layer in the monolithic body forming film is laminated on the first pressure-sensitive adhesive layer. The rigid material layer may be a resin layer having a higher rigidity than the thermosetting resin layer, such as a polyimide layer.

在这种结构的单片体形成用层叠膜中，切割单片体形成用膜而单片化时，不存在最表面侧的热固性树脂层，因此在最表面侧的热固性树脂层与刚性材料层之间不发生剥离，切割线的切断面(侧面)产生的推测为源自热固性树脂层的毛边也减少。由此，能够充分抑制切割单片体形成用膜而单片化时出现的不良情况。In the laminated film for forming a monolithic body of such a structure, when the monolithic body forming film is cut and separated into pieces, there is no thermosetting resin layer on the outermost surface side, so that no peeling occurs between the thermosetting resin layer on the outermost surface side and the rigid material layer, and the burrs generated on the cut surface (side surface) of the cutting line, which are presumed to be derived from the thermosetting resin layer, are also reduced. Thus, it is possible to fully suppress the undesirable conditions that occur when the monolithic body forming film is cut and separated into pieces.

单片体形成用层叠膜可以在半导体装置的制造工艺中使用。由单片体形成用层叠膜形成的单片体例如在具有支石墓结构的半导体装置中能够用作支撑片，上述支石墓结构包括：基板；第1芯片，配置于基板上；多个支撑片，配置于基板上且第1芯片的周围；及第2芯片，通过多个支撑片支撑且以覆盖第1芯片的方式配置。即，单片体形成用层叠膜能够用作支撑片形成用层叠膜，单片体形成用膜能够用作支撑片形成用膜。并且，由单片体形成用层叠膜形成的单片体除了支撑片以外，例如通过贴附于半导体芯片等，也能够用作半导体芯片的补强片(补强材料)。The laminated film for forming a monolithic body can be used in the manufacturing process of a semiconductor device. The monolithic body formed by the laminated film for forming a monolithic body can be used as a support sheet in, for example, a semiconductor device having a dolmen structure, the dolmen structure comprising: a substrate; a first chip arranged on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and arranged to cover the first chip. That is, the laminated film for forming a monolithic body can be used as a laminated film for forming a support sheet, and the film for forming a monolithic body can be used as a film for forming a support sheet. Furthermore, the monolithic body formed by the laminated film for forming a monolithic body can be used as a reinforcing sheet (reinforcing material) of a semiconductor chip, for example, by being attached to a semiconductor chip, in addition to a support sheet.

第2压敏胶黏剂层可以是紫外线固化型压敏胶黏剂层，也可以是非紫外线固化型压敏胶黏剂层。即，第2压敏胶黏剂层可以是通过紫外线照射而固化者，也可以与上述不同，换言之，可以含有包括具有光反应性得碳-碳双键的树脂，也可以不含有。另外，非紫外线固化型压敏胶黏剂层可以含有包括具有光反应性的碳-碳双键的树脂。例如，压敏胶黏剂层可以通过对其规定区域照射紫外线而降低该区域的胶黏性，例如可以残留包括具有光反应性的碳-碳双键的树脂。The second pressure-sensitive adhesive layer may be a UV-curable pressure-sensitive adhesive layer or a non-UV-curable pressure-sensitive adhesive layer. That is, the second pressure-sensitive adhesive layer may be cured by UV irradiation or may be different from the above, in other words, it may contain a resin including a photoreactive carbon-carbon double bond or may not contain it. In addition, the non-UV-curable pressure-sensitive adhesive layer may contain a resin including a photoreactive carbon-carbon double bond. For example, the pressure-sensitive adhesive layer may reduce the adhesiveness of a specified area by irradiating the area with UV rays, for example, a resin including a photoreactive carbon-carbon double bond may remain.

本发明的另一方面是有关一种单片体形成用层叠膜的制造方法。该单片体形成用层叠膜的制造方法具备：准备依次具备第1支撑膜、第1压敏胶黏剂层及单片体形成用膜基材的第1层叠体的工序；对第1层叠体中的单片体形成用膜基材进行模切，而制作具备单片体形成用膜的第2层叠体的工序；及在第2层叠体的单片体形成用膜上依次层叠第2压敏胶黏剂层及第2支撑膜的工序。Another aspect of the present invention is a method for producing a laminated film for forming a monolithic body. The method for producing a laminated film for forming a monolithic body comprises: a step of preparing a first laminated body having a first support film, a first pressure-sensitive adhesive layer, and a monolithic body forming film substrate in sequence; a step of die-cutting the monolithic body forming film substrate in the first laminated body to produce a second laminated body having a monolithic body forming film; and a step of laminating a second pressure-sensitive adhesive layer and a second support film in sequence on the monolithic body forming film of the second laminated body.

本发明的另一侧面是有关一种半导体装置的制造方法。半导体装置具有支石墓结构，上述支石墓结构包括：基板；第1芯片，配置于基板上；多个支撑片，配置于基板上且第1芯片的周围；及第2芯片，通过多个支撑片支撑且以覆盖第1芯片的方式配置。该半导体装置具备设置于第2芯片的一个面上且通过第2芯片及多个支撑片夹着的黏合剂片。该情况下，上述第1芯片可以与黏合剂片分离，也可以与黏合剂片接触。Another aspect of the present invention is a method for manufacturing a semiconductor device. The semiconductor device has a dolmen structure, and the dolmen structure includes: a substrate; a first chip arranged on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and arranged to cover the first chip. The semiconductor device includes an adhesive sheet disposed on one surface of the second chip and sandwiched by the second chip and the plurality of support sheets. In this case, the first chip may be separated from the adhesive sheet or may be in contact with the adhesive sheet.

该半导体装置的制造方法具备以下工序。The method for manufacturing the semiconductor device includes the following steps.

(A)准备支撑片形成用层叠膜的工序，该支撑片形成用层叠膜依次具备第1支撑膜、作为非紫外线固化型压敏胶黏剂层的第1压敏胶黏剂层、通过切割而单片化成多个支撑片的支撑片形成用膜、第2压敏胶黏剂层及第2支撑膜，支撑片形成用膜是具有热固性树脂层及刚性材料层的膜，上述刚性材料层具有高于热固性树脂层的刚性，支撑片形成用膜中的刚性材料层层叠于第1压敏胶黏剂层上(A) A step of preparing a laminated film for forming a support sheet, the laminated film for forming a support sheet comprising, in order, a first support film, a first pressure-sensitive adhesive layer as a non-ultraviolet curing type pressure-sensitive adhesive layer, a support sheet forming film which is singulated into a plurality of support sheets by cutting, a second pressure-sensitive adhesive layer, and a second support film, wherein the support sheet forming film is a film having a thermosetting resin layer and a rigid material layer, the rigid material layer having a higher rigidity than the thermosetting resin layer, and the rigid material layer in the support sheet forming film is laminated on the first pressure-sensitive adhesive layer.

(B)通过切割支撑片形成用膜，在第2压敏胶黏剂层的表面上形成多个支撑片的工序(B) Step of forming a plurality of support sheets on the surface of the second pressure-sensitive adhesive layer by cutting the support sheet forming film

(C)从第2压敏胶黏剂层拾取支撑片的工序(C) Step of picking up the support sheet from the second pressure-sensitive adhesive layer

(D)在基板上配置第1芯片的工序(D) Step of arranging the first chip on the substrate

(E)在基板上且在第1芯片的周围或应配置有第1芯片的区域的周围配置多个支撑片的工序(E) a step of arranging a plurality of supporting sheets on the substrate around the first chip or around the region where the first chip is to be arranged

(F)准备具备第2芯片及设置于第2芯片的一个面上的黏合剂片的附有黏合剂片的芯片的工序(F) Step of preparing a chip with an adhesive sheet including a second chip and an adhesive sheet provided on one surface of the second chip

(G)通过在多个支撑片的表面上配置附有黏合剂片的芯片来构建支石墓结构的工序(G) Step of constructing a dolmen structure by arranging chips with adhesive sheets on the surfaces of a plurality of support sheets

第2压敏胶黏剂层是紫外线固化型压敏胶黏剂层的情况下，在(B)工序与(C)工序之间，具备对第2压敏胶黏剂层照射紫外线的工序，由此能够降低第2压敏胶黏剂层的胶黏性。When the second pressure-sensitive adhesive layer is an ultraviolet curable pressure-sensitive adhesive layer, the adhesiveness of the second pressure-sensitive adhesive layer can be reduced by providing a step of irradiating the second pressure-sensitive adhesive layer with ultraviolet rays between the steps (B) and (C).

发明效果Effects of the Invention

依据本发明，提供一种单片体形成用层叠膜及其制造方法，在具备通过切割而单片化成多个单片体的单片体形成用膜的单片体形成用层叠膜中，能够充分抑制切割单片体形成用膜而单片化时的不良情况。并且，依据本发明，提供一种半导体装置的制造方法，其使用这种单片体形成用层叠膜(支撑片形成用层叠膜)。According to the present invention, there is provided a laminated film for forming a single piece and a method for manufacturing the same, wherein in a laminated film for forming a single piece that is singulated into a plurality of single pieces by cutting, it is possible to sufficiently suppress the undesirable situation when the laminated film for forming a single piece is cut into pieces. Furthermore, according to the present invention, there is provided a method for manufacturing a semiconductor device using such a laminated film for forming a single piece (laminated film for forming a supporting sheet).

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1中，图1(a)是示意地表示单片体形成用层叠膜的一实施方式的俯视图，图1(b)是图1(a)沿b-b线剖切的剖视图。In Fig. 1, Fig. 1(a) is a plan view schematically showing one embodiment of a laminated film for forming a monolithic body, and Fig. 1(b) is a cross-sectional view taken along line b-b of Fig. 1(a).

图2中，图2(a)、图2(b)及图2(c)是示意地表示单片体形成用层叠膜的制作过程的剖视图。In FIG. 2 , FIG. 2( a ), FIG. 2( b ), and FIG. 2( c ) are cross-sectional views schematically showing a process of manufacturing a laminated film for forming a single-piece body.

图3中，图3(a)及图3(b)是示意地表示单片体形成用层叠膜的制作过程的剖视图。In FIG. 3 , FIG. 3( a ) and FIG. 3( b ) are cross-sectional views schematically showing a process of manufacturing a laminated film for forming a single-piece body.

图4是示意地表示本发明的半导体装置的第1实施方式的剖视图。FIG. 4 is a cross-sectional view schematically showing a first embodiment of a semiconductor device according to the present invention.

图5中，图5(a)及图5(b)是示意地表示第1芯片与多个支撑片的位置关系的例子的俯视图。In FIG. 5 , FIG. 5( a ) and FIG. 5( b ) are plan views schematically showing an example of the positional relationship between the first chip and a plurality of supporting pieces.

图6是示意地表示支撑片形成用层叠膜的一实施方式的剖视图。FIG. 6 is a cross-sectional view schematically showing one embodiment of a laminated film for forming a supporting sheet.

图7中，图7(a)、图7(b)、图7(c)及图7(d)是示意地表示支撑片的制作过程的剖视图。In FIG. 7 , FIG. 7( a ), FIG. 7( b ), FIG. 7( c ) and FIG. 7( d ) are cross-sectional views schematically showing a process of manufacturing a support sheet.

图8是示意地表示配置于基板上且第1芯片周围的多个支撑片的状态的剖视图。FIG. 8 is a cross-sectional view schematically showing a state of a plurality of supporting pieces arranged on a substrate around a first chip.

图9是示意地表示附有黏合剂片的芯片的一例的剖视图。FIG. 9 is a cross-sectional view schematically showing an example of a chip with an adhesive sheet attached thereto.

图10是示意地表示形成于基板上的支石墓结构的剖视图。FIG. 10 is a cross-sectional view schematically showing a dolmen structure formed on a substrate.

图11是示意地表示本发明的半导体装置的第2实施方式的剖视图。FIG. 11 is a cross-sectional view schematically showing a second embodiment of a semiconductor device according to the present invention.

具体实施方式DETAILED DESCRIPTION

以下，适当参考附图并对本公开的实施方式进行说明。但是，本发明并不限定于以下实施方式。在以下实施方式中，除非另有指示，则其构成要件(也包括步骤等)不是必须的。各图中的构成要件的大小是概念性的，构成要件之间的大小的相对关系并不限定于各图所示的关系。Hereinafter, the embodiments of the present disclosure will be described with appropriate reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, unless otherwise indicated, the constituent elements (including steps, etc.) are not necessary. The sizes of the constituent elements in each figure are conceptual, and the relative relationship between the sizes of the constituent elements is not limited to the relationship shown in each figure.

关于本发明中的数值及其范围也相同，并不限制本发明。本说明书中，使用“～”表示的数值范围表示将记载于“～”的前后的数值分别作为最小值及最大值包括的范围。在本说明书中阶段性地记载的数值范围中，一个数值范围中所记载的上限值或下限值可以替换为其他阶段性记载的数值范围的上限值或下限值。并且，在本说明书中记载的数值范围内，该数值范围的上限值或下限值也可以替换成实施例中所示的值。The same is true for the numerical values and their ranges in the present invention, and the present invention is not limited thereto. In this specification, the numerical range represented by "～" represents the range in which the numerical values before and after "～" are respectively included as the minimum value and the maximum value. In the numerical ranges recorded in stages in this specification, the upper limit or lower limit recorded in one numerical range can be replaced by the upper limit or lower limit of the numerical range recorded in other stages. Moreover, in the numerical ranges recorded in this specification, the upper limit or lower limit of the numerical range can also be replaced by the value shown in the embodiment.

在本说明书中，“层”一词在以俯视图观察时，除了在整个面形成的形状的结构以外，还包括在一部分形成的形状的结构。并且，在本说明书中，“工序”这一术语，不仅包括独立的工序，在与其他工序无法明确区分的情况下，只要达成该工序所期望的作用，则也包括在本术语中。In this specification, the term "layer" includes not only a structure of a shape formed on the entire surface but also a structure of a shape formed on a part when viewed from a top view. Furthermore, in this specification, the term "process" includes not only an independent process but also a process that cannot be clearly distinguished from other processes as long as the desired effect of the process is achieved.

在本说明书中，(甲基)丙烯酸酯是指丙烯酸酯或与其对应的甲基丙烯酸酯。关于(甲基)丙烯酰基、(甲基)丙烯酸类共聚物等其他类似表述也相同。In the present specification, (meth)acrylate refers to acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl, (meth)acrylic copolymer, etc.

只要没有特别说明，本说明书中例示的各成分及材料可以单独使用一种，也可以并用两种以上而使用。Unless otherwise specified, each component and material exemplified in the present specification may be used alone or in combination of two or more.

[单片体形成用层叠膜][Laminated film for forming a monolithic body]

图1(a)是示意地表示单片体形成用层叠膜的一实施方式的俯视图，图1(b)是图1(a)沿b-b线剖切的剖视图。单片体形成用层叠膜10(以下，有时简称为“层叠膜10”。)依次具备：第1支撑膜1a；第1压敏胶黏剂层1b，其为非紫外线固化型压敏胶黏剂层；单片体形成用膜D(以下，有时简称为“膜D”。)，通过切割而单片化成多个单片体；第2压敏胶黏剂层2b；及第2支撑膜2a。Fig. 1(a) is a top view schematically showing an embodiment of a laminated film for forming a monolithic body, and Fig. 1(b) is a cross-sectional view of Fig. 1(a) cut along line b-b. The laminated film 10 for forming a monolithic body (hereinafter, sometimes referred to as "laminated film 10") sequentially comprises: a first support film 1a; a first pressure-sensitive adhesive layer 1b, which is a non-ultraviolet curing pressure-sensitive adhesive layer; a monolithic body forming film D (hereinafter, sometimes referred to as "film D"), which is monolithicized into a plurality of monolithic bodies by cutting; a second pressure-sensitive adhesive layer 2b; and a second support film 2a.

有时将具有第1支撑膜1a及设置于第1支撑膜1a上的第1压敏胶黏剂层1b的层叠膜称为“胶黏性膜1”。有时将具有第2支撑膜2a及设置于第2支撑膜2a上的第2压敏胶黏剂层2b的层叠膜称为“切割膜2”。在层叠膜10中，切割膜2的第2压敏胶黏剂层2b的一部分可以与胶黏性膜1的第1压敏胶黏剂层1b接触(参考图1(b))，也可以不接触。A laminated film having a first support film 1a and a first pressure-sensitive adhesive layer 1b disposed on the first support film 1a is sometimes referred to as an "adhesive film 1". A laminated film having a second support film 2a and a second pressure-sensitive adhesive layer 2b disposed on the second support film 2a is sometimes referred to as a "cutting film 2". In the laminated film 10, a portion of the second pressure-sensitive adhesive layer 2b of the cutting film 2 may or may not be in contact with the first pressure-sensitive adhesive layer 1b of the adhesive film 1 (see FIG. 1(b)).

作为第1支撑膜1a，例如可以举出聚酯(聚对苯二甲酸乙二酯(PET)、聚对苯二甲酸丁二酯、聚萘二甲酸乙二醇酯等)、聚烯烃(聚乙烯、聚丙烯等)、聚碳酸酯、聚酰胺、聚酰亚胺、聚酰胺酰亚胺、聚醚酰亚胺、聚醚硫化物、聚醚砜、聚醚酮、聚苯醚、聚苯硫醚等的膜。它们的膜可以是单层膜，也可以是由2种以上的膜构成的多层膜。第1支撑膜1a的厚度例如可以为1～200μm，10～100μm或20～50μm。Examples of the first support film 1a include films of polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamide-imide, polyetherimide, polyether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, etc. These films may be single-layer films or multilayer films composed of two or more films. The thickness of the first support film 1a may be, for example, 1 to 200 μm, 10 to 100 μm, or 20 to 50 μm.

第1压敏胶黏剂层1b是由非紫外线固化型压敏胶黏剂(pressure-sensitiveadhesive)形成的层(非紫外线固化型压敏胶黏剂层)。非紫外线固化型压敏胶黏剂是在短时间的加压示出一定的胶黏性的压敏胶黏剂，能够使用以往公知的压敏胶黏剂。作为非紫外线固化型压敏胶黏剂，例如可以举出天然橡胶系、合成橡胶系、丙烯酸树脂系、聚乙烯醚树脂系、聚胺酯树脂系、硅酮树脂系等压敏胶黏剂。第1压敏胶黏剂层1b的厚度例如可以为5～20μm。The first pressure-sensitive adhesive layer 1b is a layer (non-UV-curing pressure-sensitive adhesive layer) formed of a non-UV-curing pressure-sensitive adhesive. A non-UV-curing pressure-sensitive adhesive is a pressure-sensitive adhesive that shows a certain degree of adhesiveness when pressurized for a short period of time, and a conventionally known pressure-sensitive adhesive can be used. Examples of non-UV-curing pressure-sensitive adhesives include natural rubber-based, synthetic rubber-based, acrylic resin-based, polyvinyl ether resin-based, polyurethane resin-based, and silicone resin-based pressure-sensitive adhesives. The thickness of the first pressure-sensitive adhesive layer 1b can be, for example, 5 to 20 μm.

胶黏性膜1能够使用市售品。作为胶黏性膜的市售品，例如可以举出PET75-H2120(10)(商品名，NEION Film Coatings Corp制造)、Cosmotac系列(商品名，Cosmotec Co.,Ltd.制造)、HYDREX DT系列(商品名，Showa Denko Materials co.,Ltd.制造)等。Commercially available products can be used as the adhesive film 1. Examples of commercially available adhesive films include PET75-H2120 (10) (trade name, manufactured by NEION Film Coatings Corp.), Cosmotac series (trade name, manufactured by Cosmotec Co., Ltd.), and HYDREX DT series (trade name, manufactured by Showa Denko Materials Co., Ltd.).

胶黏性膜1的厚度例如可以为5～150μm，15～100μm或25～70μm。The thickness of the adhesive film 1 may be, for example, 5 to 150 μm, 15 to 100 μm, or 25 to 70 μm.

膜D是具有热固性树脂层D1及刚性材料层D2的膜，该刚性材料层D2具有高于热固性树脂层D1的刚性。膜D可以是双层膜。膜D中的刚性材料层D2层叠于第1压敏胶黏剂层1b上。The film D is a film having a thermosetting resin layer D1 and a rigid material layer D2, and the rigid material layer D2 has higher rigidity than the thermosetting resin layer D1. The film D may be a double-layer film. The rigid material layer D2 in the film D is laminated on the first pressure-sensitive adhesive layer 1b.

构成热固性树脂层D1的热固性树脂组成物可以经过半固化(B阶段)状态，其后通过加热处理能够成为固化物(C阶段)状态。热固性树脂组成物更容易获得所期望的效果，可以含有环氧树脂、固化剂及弹性体，根据需要，也可以进一步含有无机填料、固化促进剂等。热固性树脂层D1可以是至少一部分固化的半固化(B阶段)状态，也可以是其后通过加热处理能够成为固化物(C阶段)状态。The thermosetting resin composition constituting the thermosetting resin layer D1 may be in a semi-cured (B stage) state, and then can be cured (C stage) by heat treatment. The thermosetting resin composition is more likely to obtain the desired effect, and may contain an epoxy resin, a curing agent and an elastomer, and may further contain an inorganic filler, a curing accelerator, etc. as required. The thermosetting resin layer D1 may be in a semi-cured (B stage) state that is at least partially cured, or may be in a cured (C stage) state that is then cured by heat treatment.

(环氧树脂)(Epoxy resin)

环氧树脂只要是固化而具有接着作用，并无特别限定。作为环氧树脂，例如可以举出双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂等二官能环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂等酚醛清漆型环氧树脂等。并且，作为环氧树脂，例如也可以举出多官能环氧树脂、环氧丙基胺型环氧树脂、含杂环环氧树脂、脂环式环氧树脂等。The epoxy resin is not particularly limited as long as it is cured and has an adhesive effect. As the epoxy resin, for example, bifunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin and other novolac type epoxy resins can be cited. In addition, as the epoxy resin, for example, multifunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic epoxy resins, alicyclic epoxy resins and the like can also be cited.

(固化剂)(Curing agent)

作为固化剂，例如可以举出酚醛树脂、酯化合物、芳香族胺、脂肪族胺、酸酐等。其中，从达成高剪切强度(晶粒剪切强度)的观点考虑，固化剂可以是酚醛树脂。作为酚醛树脂的市售品，例如可以举出DIC Corporation制造的LF-4871(商品名，BPA酚醛清漆型酚醛树脂)、AIR WATER INC.制造的HE-100C-30(商品名，苯基二十烷醇型酚醛树脂)、DICCorporation制造的PHENOLITE KA及TD系列、Mitsui Chemicals,Inc.制造的Milex XLC系列及XL系列(例如，Milex XLC-LL)、AIR WATER INC.制造的HE系列(例如，HE100C-30)、Meiwa Plastic Industries,Ltd.制造的MEHC-7800系列(例如，MEHC-7800-4S)、JEFChemical Corporation制造的JDPP系列、Gun Ei Chemical Industry Co.,Ltd.制造的PSM系列(例如，PSM-4326)等。Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines, acid anhydrides, etc. Among them, the curing agent may be a phenolic resin from the viewpoint of achieving high shear strength (grain shear strength). Commercially available products of phenolic resins include, for example, LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenyleicosanol type phenolic resin) manufactured by AIR WATER INC., PHENOLITE KA and TD series manufactured by DIC Corporation, Milex XLC series and XL series (e.g., Milex XLC-LL) manufactured by Mitsui Chemicals, Inc., HE series (e.g., HE100C-30) manufactured by AIR WATER INC., MEHC-7800 series (e.g., MEHC-7800-4S) manufactured by Meiwa Plastic Industries, Ltd., JDPP series manufactured by JEF Chemical Corporation, and PSM series (e.g., PSM-4326) manufactured by Gun Ei Chemical Industry Co., Ltd.

从达成高剪切强度(晶粒剪切强度)的观点考虑，环氧树脂及酚醛树脂的调配量分别以环氧当量和羟基当量的当量比计，可以为0.6～1.5，0.7～1.4或0.8～1.3。当配比在这种范围内时，存在容易使固化性及流动性双方实现充分高水平的倾向。From the viewpoint of achieving high shear strength (grain shear strength), the amount of epoxy resin and phenolic resin blended can be 0.6 to 1.5, 0.7 to 1.4 or 0.8 to 1.3 in terms of the equivalent ratio of epoxy equivalent to hydroxyl equivalent. When the blending ratio is within this range, there is a tendency to easily achieve sufficiently high levels of both curability and fluidity.

(弹性体)(Elastomer)

作为弹性体，例如可以举出丙烯酸树脂、聚酯树脂、聚酰胺树脂、聚酰亚胺树脂、硅树脂、聚丁二烯、丙烯腈、环氧改性聚丁二烯、马来酸酐改性聚丁二烯、酚改性聚丁二烯、羧基改性丙烯腈等。Examples of the elastomer include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxyl-modified acrylonitrile.

从达成高剪切强度(晶粒剪切强度)的观点考虑，弹性体可以是丙烯酸树脂。丙烯酸树脂可以是将作为交联性官能基具有丙烯酸环氧丙酯或甲基丙烯酸环氧丙酯等环氧基或环氧丙基的官能性单体聚合而获得的含环氧基(甲基)丙烯酸类共聚物等丙烯酸树脂。其中，丙烯酸树脂可以是含环氧基(甲基)丙烯酸酯共聚物及含环氧基丙烯酸酯橡胶，优选含环氧基丙烯酸酯橡胶。含有环氧基的丙烯酸酯橡胶是以丙烯酸酯为主要成分，主要由丙烯酸丁酯与丙烯腈等的共聚物、丙烯酸乙酯、丙烯腈等的共聚物等的、具有环氧基的橡胶。另外，丙烯酸树脂不仅具有环氧基，还可以具有醇性或酚性羟基、羧基等交联性官能基。From the viewpoint of achieving high shear strength (grain shear strength), the elastomer can be an acrylic resin. The acrylic resin can be an acrylic resin such as epoxy (meth) acrylic copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group such as glycidyl acrylate or glycidyl methacrylate as a crosslinking functional group. Among them, the acrylic resin can be an epoxy (meth) acrylic ester copolymer and an epoxy acrylate rubber, preferably an epoxy acrylate rubber. The epoxy acrylate rubber containing epoxy groups is a rubber with an epoxy group, which is mainly composed of a copolymer of butyl acrylate and acrylonitrile, a copolymer of ethyl acrylate, acrylonitrile, etc., with acrylate as the main component. In addition, the acrylic resin not only has an epoxy group, but can also have crosslinking functional groups such as alcoholic or phenolic hydroxyl groups and carboxyl groups.

作为丙烯酸树脂的市售品，例如可以举出Nagase Chemtex Corporation制造的SG-70L、SG-708-6、WS-023EK30、SG-280EK23、SG-P3溶剂变更品(商品名，丙烯酸酯橡胶，重均分子量：80万，Tg：12℃，溶剂为环己酮)等。Commercially available products of acrylic resins include, for example, SG-70L, SG-708-6, WS-023EK30, SG-280EK23, and SG-P3 solvent-modified products (trade names, acrylic rubber, weight average molecular weight: 800,000, Tg: 12° C., solvent: cyclohexanone) manufactured by Nagase Chemtex Corporation.

从达成高剪切强度(晶粒剪切强度)的观点考虑，丙烯酸树脂的玻璃化转变温度(Tg)优选为-50～50℃，更优选为-30～30℃。从达成高剪切强度(晶粒剪切强度)的观点考虑，丙烯酸树脂的重均分子量(Mw)优选为10万～300万，更优选为50万～200万。在此，Mw是指利用凝胶渗透色谱法(GPC)进行测定，使用基于标准聚苯乙烯的校准曲线换算的值。另外，通过使用分子量分布窄的丙烯酸树脂，具有能够形成高弹性的单片体的倾向。From the viewpoint of achieving high shear strength (grain shear strength), the glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50°C, more preferably -30 to 30°C. From the viewpoint of achieving high shear strength (grain shear strength), the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000. Here, Mw refers to a value measured by gel permeation chromatography (GPC) and converted using a calibration curve based on standard polystyrene. In addition, by using an acrylic resin with a narrow molecular weight distribution, there is a tendency to form a highly elastic monolithic body.

从达成高剪切强度(晶粒剪切强度)的观点考虑，相对于环氧树脂及固化剂的合计100质量份，弹性体的含量可以为10～200质量份或20～100质量份。From the viewpoint of achieving high shear strength (grain shear strength), the content of the elastomer may be 10 to 200 parts by mass or 20 to 100 parts by mass based on 100 parts by mass of the total of the epoxy resin and the curing agent.

(无机填料)(Inorganic filler)

作为无机填料，例如可以举出氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶性二氧化硅等。Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica.

从达成高剪切强度(晶粒剪切强度)的观点考虑，无机填料的平均粒径可以为0.005μm～1.0μm或0.05～0.5μm。从达成高剪切强度(晶粒剪切强度)的观点考虑，无机填料的表面可以进行化学修饰。作为将表面化学修饰的材料，例如可以举出硅烷偶联剂等。作为硅烷偶联剂的官能团的种类，例如可以举出乙烯基、丙烯酰基、环氧基、巯基、胺基、二胺基、烷氧基、乙氧基等。From the viewpoint of achieving high shear strength (grain shear strength), the average particle size of the inorganic filler can be 0.005 μm to 1.0 μm or 0.05 to 0.5 μm. From the viewpoint of achieving high shear strength (grain shear strength), the surface of the inorganic filler can be chemically modified. As a material for chemically modifying the surface, for example, a silane coupling agent can be cited. As the type of functional group of the silane coupling agent, for example, a vinyl group, an acryl group, an epoxy group, a mercapto group, an amine group, a diamine group, an alkoxy group, an ethoxy group, etc. can be cited.

从达成高剪切强度(晶粒剪切强度)的观点考虑，相对于热固性树脂组成物的树脂成分(环氧树脂、固化剂及弹性体)100质量份，无机填料的含量可以为20～200质量份或30～100质量份。From the viewpoint of achieving high shear strength (grain shear strength), the content of the inorganic filler may be 20 to 200 parts by mass or 30 to 100 parts by mass relative to 100 parts by mass of the resin components (epoxy resin, curing agent and elastomer) of the thermosetting resin composition.

(固化促进剂)(Curing accelerator)

作为固化促进剂，例如可以举出咪唑类及其衍生物、有机磷系化合物、仲胺类、叔胺类、季铵盐等。从达成高剪切强度(晶粒剪切强度)的观点考虑，固化促进剂可以是咪唑类。作为咪唑类，例如可以举出2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-甲基咪唑等。As the curing accelerator, for example, imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. can be cited. From the viewpoint of achieving high shear strength (grain shear strength), the curing accelerator can be imidazoles. As imidazoles, for example, 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. can be cited.

从达成高剪切强度(晶粒剪切强度)的观点考虑，相对于环氧树脂及固化剂的合计100质量份，固化促进剂的含量可以为0.04～3质量份或0.04～0.2质量份。From the viewpoint of achieving high shear strength (grain shear strength), the content of the curing accelerator may be 0.04 to 3 parts by mass or 0.04 to 0.2 parts by mass based on 100 parts by mass of the total of the epoxy resin and the curing agent.

刚性材料层D2例如可以是具有高于热固性树脂层D1的刚性的树脂材料层或具有高于热固性树脂层D1的刚性的金属层。该树脂层由与热固性树脂层D1不同的材质形成的树脂层，例如可以是聚酰亚胺层。刚性材料层D2为该树脂层时，通过切割而单片化之后，即使不实施热固性树脂层D1的热固化处理，具有拾取性优异的倾向。该金属层例如可以是铜层或铝层。刚性材料层D2为该金属层时，除了优异的拾取性，通过树脂材料与金属材料的光学性反差，在拾取工序中具有良好的可视性的倾向。The rigid material layer D2 may be, for example, a resin material layer having higher rigidity than the thermosetting resin layer D1 or a metal layer having higher rigidity than the thermosetting resin layer D1. The resin layer is a resin layer formed of a material different from that of the thermosetting resin layer D1, and may be, for example, a polyimide layer. When the rigid material layer D2 is the resin layer, after being singulated by cutting, it tends to have excellent picking properties even without subjecting the thermosetting resin layer D1 to a heat curing treatment. The metal layer may be, for example, a copper layer or an aluminum layer. When the rigid material layer D2 is the metal layer, in addition to excellent picking properties, it tends to have good visibility during the picking process due to the optical contrast between the resin material and the metal material.

热固性树脂层D1相对于膜D的厚度的厚度比率(热固性树脂层D1的厚度/膜D的厚度)可以为0.1～0.8，0.2～0.7或0.2～0.6。该比率为0.1以上时，则具有例如在配置单片体之后的位置偏移抑制方面优异的倾向。该比率为0.8以下时，具有拾取性优异的倾向。热固性树脂层D1的厚度例如可以为5～120μm或10～60μm。刚性材料层D2的厚度例如可以为20～80μm或20～60μm。The thickness ratio of the thermosetting resin layer D1 to the thickness of the film D (thickness of the thermosetting resin layer D1/thickness of the film D) can be 0.1 to 0.8, 0.2 to 0.7 or 0.2 to 0.6. When the ratio is greater than 0.1, there is a tendency to be excellent in suppressing positional deviation after configuring the single-piece body. When the ratio is less than 0.8, there is a tendency to be excellent in pickup properties. The thickness of the thermosetting resin layer D1 can be, for example, 5 to 120 μm or 10 to 60 μm. The thickness of the rigid material layer D2 can be, for example, 20 to 80 μm or 20 to 60 μm.

膜D例如可以通过冲孔刀等将单片体形成用膜基材模切(例如，也可以改称为“(预)切”、“切断”。)为所期望的形状。膜D在俯视下的形状例如可以是图1(a)所示的圆形，也可以是矩形(正方形或长方形)。膜D在俯视下的形状是圆形的情况下，膜D的直径例如可以是290～340mm或310～335mm。The film D can be formed into a desired shape by die-cutting (for example, also referred to as "(pre)cutting" or "cutting") the film substrate for forming the monolithic body by a punching knife or the like. The shape of the film D when viewed from above can be, for example, a circle as shown in FIG. 1(a) or a rectangle (square or rectangular). When the shape of the film D when viewed from above is a circle, the diameter of the film D can be, for example, 290 to 340 mm or 310 to 335 mm.

作为第2支撑膜2a，能够例示出与由第1支撑膜1a例示的膜相同的膜。第2支撑膜2a的厚度例如可以为1～200μm，50～170μm或70～130μm。Examples of the second support film 2a include the same films as those exemplified by the first support film 1a. The thickness of the second support film 2a may be, for example, 1 to 200 μm, 50 to 170 μm, or 70 to 130 μm.

第2压敏胶黏剂层2b是由压敏胶黏剂形成的层(压敏胶黏剂层)。压敏胶黏剂能够使用在该区域中通常使用的压敏胶黏剂，可以是紫外线固化型压敏胶黏剂或非紫外线固化型压敏胶黏剂中的任一个。即，第2压敏胶黏剂层2b可以是紫外线固化型压敏胶黏剂层或非紫外线固化型压敏胶黏剂层中的任一个。非紫外线固化型压敏胶黏剂能够例示出与在第1压敏胶黏剂层1b例示的非紫外线固化型压敏胶黏剂相同的压敏胶黏剂。紫外线固化型压敏胶黏剂是具有通过紫外线的照射降低胶黏性的性质的压敏胶黏剂，能够使用以往公知的压敏胶黏剂。作为紫外线固化型压敏胶黏剂，例如可以举出包括具有光反应性的碳-碳双键的树脂等。更具体而言，例如可以举出丙烯酸树脂系等压敏胶黏剂。第2压敏胶黏剂层2b的厚度例如可以为1～100μm。The second pressure-sensitive adhesive layer 2b is a layer (pressure-sensitive adhesive layer) formed by a pressure-sensitive adhesive. The pressure-sensitive adhesive can use a pressure-sensitive adhesive commonly used in this area, and can be any one of an ultraviolet curing pressure-sensitive adhesive or a non-ultraviolet curing pressure-sensitive adhesive. That is, the second pressure-sensitive adhesive layer 2b can be any one of an ultraviolet curing pressure-sensitive adhesive layer or a non-ultraviolet curing pressure-sensitive adhesive layer. The non-ultraviolet curing pressure-sensitive adhesive can exemplify the same pressure-sensitive adhesive as the non-ultraviolet curing pressure-sensitive adhesive exemplified in the first pressure-sensitive adhesive layer 1b. The ultraviolet curing pressure-sensitive adhesive is a pressure-sensitive adhesive having the property of reducing adhesiveness by irradiation with ultraviolet rays, and a conventionally known pressure-sensitive adhesive can be used. As the ultraviolet curing pressure-sensitive adhesive, for example, a resin including a carbon-carbon double bond having photoreactivity can be cited. More specifically, for example, pressure-sensitive adhesives such as acrylic resins can be cited. The thickness of the second pressure-sensitive adhesive layer 2 b may be, for example, 1 to 100 μm.

切割膜2在俯视下的形状能够根据膜D的形状适当调整。切割膜2例如可以是通过冲孔刀等将切割膜基材模切((预)切、切断)为所期望的形状者。切割膜2在俯视下的形状例如可以是图1(a)所示的圆形，也可以是矩形(正方形或长方形)。切割膜2在俯视下的形状为圆形的情况下，切割膜2的直径例如可以为290～500mm或310～400mm。The shape of the cutting film 2 when viewed from above can be appropriately adjusted according to the shape of the film D. The cutting film 2 can be, for example, a cutting film substrate that is die-cut ((pre)cut, cut) into a desired shape by a punching knife or the like. The shape of the cutting film 2 when viewed from above can be, for example, a circle as shown in FIG. 1(a), or a rectangle (square or rectangle). When the shape of the cutting film 2 when viewed from above is a circle, the diameter of the cutting film 2 can be, for example, 290 to 500 mm or 310 to 400 mm.

切割膜2的厚度例如可以为5～200μm，15～170μm或30～140μm。The thickness of the dicing film 2 may be, for example, 5 to 200 μm, 15 to 170 μm, or 30 to 140 μm.

在层叠膜10中，优选为胶黏性膜1(第1压敏胶黏剂层1b)相对于膜D(刚性材料层D2)的30°剥离强度(第1剥离强度)低于切割膜2(第2压敏胶黏剂层2b)相对于膜D(热固性树脂层D1)的30°剥离强度(第2剥离强度)。剥离强度处于这种关系，由此在层叠膜10中，相比切割膜2先剥离胶黏性膜1变得更容易。In the laminated film 10, it is preferred that the 30° peel strength (first peel strength) of the adhesive film 1 (first pressure-sensitive adhesive layer 1b) relative to the film D (rigid material layer D2) is lower than the 30° peel strength (second peel strength) of the dicing film 2 (second pressure-sensitive adhesive layer 2b) relative to the film D (thermosetting resin layer D1). The peel strengths are in such a relationship, so that in the laminated film 10, it becomes easier to peel the adhesive film 1 before the dicing film 2.

第1剥离强度例如可以为0.5N/25mm以下，也可以为0.4N/25mm以下或0.3N/25mm以下。第1剥离强度的下限例如可以为0.1N/25mm以上。第1剥离强度能够通过以下方法来测定。首先，准备层叠膜10，并将其以宽度25mm×长度100mm切出，由此制作测定试样。接着，从测定试样剥离切割膜2，并在金属制支撑板上固定测定试样的膜D侧。在固定测定试样的状态下，能够通过在测定温度25℃、剥离角度30°及剥离速度60mm/分钟的条件下剥下胶黏性膜1来测定第1剥离强度。The first peel strength may be, for example, less than 0.5 N/25 mm, or less than 0.4 N/25 mm or less than 0.3 N/25 mm. The lower limit of the first peel strength may be, for example, more than 0.1 N/25 mm. The first peel strength can be measured by the following method. First, prepare a laminated film 10 and cut it out with a width of 25 mm × a length of 100 mm to prepare a measurement sample. Next, peel off the cut film 2 from the measurement sample, and fix the film D side of the measurement sample on a metal support plate. While the measurement sample is fixed, the first peel strength can be measured by peeling off the adhesive film 1 under the conditions of a measurement temperature of 25 ° C, a peeling angle of 30 °, and a peeling speed of 60 mm/min.

第2剥离强度可以超过0.5N/25mm，也可以为1.0N/25mm以上或2.0N/25mm以上。第2剥离强度的上限例如可以为5.0N/25mm以下。第2剥离强度能够通过以下方法来测定。首先，准备层叠膜10，并将其以宽度25mm×长度100mm切出，由此制作测定试样。接着，从测定试样剥离胶黏性膜1，并在金属制支撑板上固定测定试样的膜D侧。在固定测定试样的状态下，能够通过在测定温度25℃、剥离角度30°及剥离速度60mm/分钟的条件下剥下切割膜2来测定第2剥离强度。The second peel strength may exceed 0.5N/25mm, or may be greater than 1.0N/25mm or greater than 2.0N/25mm. The upper limit of the second peel strength may be, for example, less than 5.0N/25mm. The second peel strength can be measured by the following method. First, prepare a laminated film 10 and cut it out with a width of 25mm×a length of 100mm to prepare a measurement sample. Next, peel off the adhesive film 1 from the measurement sample, and fix the film D side of the measurement sample on a metal support plate. While the measurement sample is fixed, the second peel strength can be measured by peeling off the dicing film 2 under the conditions of a measurement temperature of 25°C, a peeling angle of 30°, and a peeling speed of 60mm/min.

在切割膜2(第2压敏胶黏剂层2b)的一部分与胶黏性膜1(第1压敏胶黏剂层1b)接触的情况下，胶黏性膜1(第1压敏胶黏剂层1b)相对于切割膜2(第2压敏胶黏剂层2b)的90°剥离强度(第3剥离强度)例如可以为0.2N/25mm以下，也可以为0.1N/25mm以下或0.05N/25mm以下。第3剥离强度的下限例如可以为0.01N/25mm以上。第3剥离强度能够通过以下方法来测定。首先，准备层叠膜10，并将其以宽度25mm×长度200mm切出，由此制作测定试样。接着，在金属制的支撑板上固定测定试样的切割膜2侧。在固定测定试样的状态下，能够通过在测定温度25℃、剥离角度90°及剥离速度50mm/分钟的条件下剥下胶黏性膜1来测定第3剥离强度。通过第3剥离强度在上述范围内，能够容易从层叠膜10剥离胶黏性膜1。When a portion of the cutting film 2 (the second pressure-sensitive adhesive layer 2b) is in contact with the adhesive film 1 (the first pressure-sensitive adhesive layer 1b), the 90° peel strength (the third peel strength) of the adhesive film 1 (the first pressure-sensitive adhesive layer 1b) relative to the cutting film 2 (the second pressure-sensitive adhesive layer 2b) may be, for example, less than 0.2N/25mm, or less than 0.1N/25mm or less than 0.05N/25mm. The lower limit of the third peel strength may be, for example, greater than 0.01N/25mm. The third peel strength can be measured by the following method. First, prepare a laminated film 10 and cut it out with a width of 25mm×a length of 200mm to prepare a measurement sample. Next, fix the cutting film 2 side of the measurement sample on a metal support plate. While the measurement sample is fixed, the third peel strength can be measured by peeling off the adhesive film 1 under the conditions of a measurement temperature of 25°C, a peeling angle of 90°, and a peeling speed of 50mm/min. When the third peel strength is within the above range, the adhesive film 1 can be easily peeled from the laminated film 10 .

层叠膜10可以在半导体装置的制造工艺中使用。由层叠膜10形成的单片体例如在具有支石墓结构的半导体装置中能够用作支撑片，上述支石墓结构包括：基板；第1芯片，配置于基板上；多个支撑片，配置于基板上且第1芯片的周围；及第2芯片，通过多个支撑片支撑且以覆盖第1芯片的方式配置。The laminated film 10 can be used in a manufacturing process of a semiconductor device. A single sheet formed by the laminated film 10 can be used as a supporting sheet in a semiconductor device having a dolmen structure, for example, the dolmen structure including: a substrate; a first chip arranged on the substrate; a plurality of supporting sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of supporting sheets and arranged to cover the first chip.

并且，由层叠膜10形成的单片体例如通过贴附于半导体芯片等，也能够用作半导体芯片的补强材料。由层叠膜10形成的单片体能够通过包括后述的半导体装置的制造方法中的(A)～(C)的工序的方法来制造。Furthermore, the single piece formed of the laminated film 10 can be used as a reinforcing material for a semiconductor chip by, for example, attaching it to a semiconductor chip, etc. The single piece formed of the laminated film 10 can be manufactured by a method including steps (A) to (C) in the semiconductor device manufacturing method described later.

[单片体形成用层叠膜的制造方法][Method for producing a laminated film for forming a monolithic body]

图2(a)、图2(b)及图2(c)、以及图3(a)、图3(b)及图3(c)是示意地表示单片体形成用层叠膜的制作过程的剖视图。层叠膜10的制造方法包括：准备依次具备第1支撑膜1a、第1压敏胶黏剂层1b及单片体形成用膜基材DA(以下，有时简称为“膜基材DA”。)的第1层叠体20的工序(第1工序)；对第1层叠体20中的膜基材DA进行模切，而制作具备膜D的第2层叠体30的工序(第2工序)；在第2层叠体30的膜D上依次层叠第2压敏胶黏剂层2b及第2支撑膜2a的工序(第3工序)。另外，膜基材DA可以是膜D的原膜。Figures 2(a), 2(b) and 2(c), and Figures 3(a), 3(b) and 3(c) are cross-sectional views schematically showing the manufacturing process of a laminated film for forming a monolithic body. The manufacturing method of the laminated film 10 includes: a process (first process) of preparing a first laminated body 20 having a first support film 1a, a first pressure-sensitive adhesive layer 1b and a film substrate DA for forming a monolithic body (hereinafter, sometimes referred to as "film substrate DA"); a process (second process) of die-cutting the film substrate DA in the first laminated body 20 to produce a second laminated body 30 having a film D; a process (third process) of sequentially laminating a second pressure-sensitive adhesive layer 2b and a second support film 2a on the film D of the second laminated body 30. In addition, the film substrate DA can be the original film of the film D.

(第1工序)(1st step)

本工序是准备第1层叠体20的工序。第1层叠体20只要是获得该结构的层叠体，则制作方法并无特别限制，但是能够通过在具有第1支撑膜1a及设置于第1支撑膜1a上的第1压敏胶黏剂层1b的胶黏性膜1的第1压敏胶黏剂层1b上，配置具有热固性树脂层D1及刚性材料层D2的膜基材DA的刚性材料层D2侧，并贴合胶黏性膜1与膜基材DA来获得(参考图2(a))。This step is a step of preparing the first laminate 20. The first laminate 20 is not particularly limited in its production method as long as it is a laminate having such a structure, but can be obtained by disposing the rigid material layer D2 side of a film substrate DA having a thermosetting resin layer D1 and a rigid material layer D2 on the first pressure-sensitive adhesive layer 1b of an adhesive film 1 having a first support film 1a and a first pressure-sensitive adhesive layer 1b provided on the first support film 1a, and bonding the adhesive film 1 and the film substrate DA (see FIG. 2(a)).

热固性树脂层D1例如能够通过将热固性树脂组成物涂布于支撑膜上的方法来形成。在热固性树脂层D1的形成中，可以使用热固性树脂组成物的清漆(热固性树脂清漆)。使用热固性树脂清漆的情况下，能够将上述成分在溶剂中混合或混炼来制作热固性树脂清漆，将所获得的热固性树脂清漆涂布于支撑膜上，并加热干燥溶剂来进行去除，从而获得热固性树脂层D1。The thermosetting resin layer D1 can be formed, for example, by applying a thermosetting resin composition on a support film. In the formation of the thermosetting resin layer D1, a varnish of a thermosetting resin composition (thermosetting resin varnish) can be used. When using a thermosetting resin varnish, the above components can be mixed or kneaded in a solvent to prepare a thermosetting resin varnish, the obtained thermosetting resin varnish is applied to a support film, and the solvent is removed by heating and drying, thereby obtaining the thermosetting resin layer D1.

支撑膜只要抗上述加热干燥，则并无特别限定，例如可以是聚酯膜、聚丙烯膜、聚对苯二甲酸乙二酯(PET)膜、聚酰亚胺膜、聚醚酰亚胺膜、聚萘二甲酸乙二醇酯膜、聚甲基戊烯膜等。支撑膜可以是组合2种以上而成的多层膜，也可以是表面由硅酮系、二氧化硅系等离型剂等处理的膜。支撑膜的厚度例如可以为10～200μm或20～170μm。The support film is not particularly limited as long as it is resistant to the above-mentioned heating and drying, and may be, for example, a polyester film, a polypropylene film, a polyethylene terephthalate (PET) film, a polyimide film, a polyetherimide film, a polyethylene naphthalate film, a polymethylpentene film, etc. The support film may be a multilayer film composed of two or more kinds of films, or a film whose surface is treated with a release agent such as a silicone-based or silica-based film. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

混合或混炼使用一般的搅拌机、擂溃机、三辊轧机、球磨机等分散机，并能够适当组合它们来进行。The mixing or kneading can be carried out by using a general disperser such as a stirrer, a pestle, a three-roll mill, or a ball mill, or by combining them as appropriate.

用于制备热固性树脂清漆的溶剂只要是能够将各成分均匀地溶解、混炼或分散者，则并无限制，能够使用以往公知者。作为这种溶剂，例如可以举出丙酮、甲基乙基酮、甲基异丁基酮、环己酮等酮系溶媒、二甲基甲酰胺、二甲基乙酰胺、N甲基吡咯烷酮、甲苯、二甲苯等。The solvent used to prepare the thermosetting resin varnish is not limited as long as it can evenly dissolve, mix or disperse the components, and any conventionally known solvent can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene.

作为将热固性树脂清漆涂布于支撑膜的方法，能够使用公知的方法，例如能够使用刮刀涂布法、辊涂法、喷涂法、凹版涂布法、棒涂法及帘式涂布法等。加热干燥只要是所使用的溶剂充分挥发的条件，则并无特别限制，但是能够在50～150℃的范围内且在1～30分钟的范围内进行。加热干燥能够在不同的加热温度下且以不同的加热时间阶段性地进行。As a method for applying the thermosetting resin varnish to the support film, a known method can be used, for example, a knife coating method, a roller coating method, a spray coating method, a gravure coating method, a rod coating method, and a curtain coating method can be used. The heating and drying is not particularly limited as long as the conditions for the used solvent to fully volatilize, but can be carried out within the range of 50 to 150° C. and within the range of 1 to 30 minutes. The heating and drying can be carried out in stages at different heating temperatures and with different heating times.

膜基材DA能够通过利用加热橡胶辊贴合热固性树脂层D1与刚性材料层D2来获得。The film base material DA can be obtained by bonding the thermosetting resin layer D1 and the rigid material layer D2 together using a heated rubber roller.

第1层叠体20也能够通过在胶黏性膜1的第1压敏胶黏剂层1b上依次层叠刚性材料层D2及热固性树脂层D1来制作膜基材DA而获得。该情况下，通过贴合胶黏性膜1的第1压敏胶黏剂层1b与刚性材料层D2之后，并将热固性树脂清漆涂布于刚性材料层D2来设置热固性树脂层D1。The first laminate 20 can also be obtained by sequentially laminating a rigid material layer D2 and a thermosetting resin layer D1 on the first pressure-sensitive adhesive layer 1b of the adhesive film 1 to prepare a film substrate DA. In this case, the thermosetting resin layer D1 is provided by laminating the first pressure-sensitive adhesive layer 1b of the adhesive film 1 and the rigid material layer D2 and then applying a thermosetting resin varnish on the rigid material layer D2.

(第2工序)(Second step)

本工序是制作第2层叠体30的工序。在此，能够以所制作的第1层叠体20的膜基材DA成为所期望的形状(例如圆形)的方式，通过冲孔刀等，在位置L1上从膜基材DA的上表面沿方向X形成切口并进行模切((预)切、切断)，由此制作具备膜D的第2层叠体30(参考图2(b)、(c)，第1预切加工)。对膜基材DA进行模切时切口可以到达至胶黏性膜1的一部分。This step is a step of manufacturing the second laminate 30. Here, a cut is formed along the direction X from the upper surface of the film substrate DA at position L1 by a punching knife or the like so that the film substrate DA of the manufactured first laminate 20 becomes a desired shape (e.g., circular), and die-cutting ((pre)cutting, cutting) is performed, thereby manufacturing the second laminate 30 having the film D (refer to FIG. 2 (b), (c), the first pre-cutting process). When die-cutting the film substrate DA, the cut can reach a part of the adhesive film 1.

另外，根据本发明人等的研究发现，胶黏性膜1具有第1压敏胶黏剂层1b，由此抑制第1支撑膜1a与刚性材料层D2的剥离。并且，根据本发明人等的研究发现，胶黏性膜1具有第1压敏胶黏剂层1b，由此能够有效去除在制造工序中附着于膜基材DA或膜D的异物(例如树脂的残渣等)。因此，胶黏性膜1具有第1压敏胶黏剂层1b，由此次能够改善膜基材DA的模切中的成品率。异物例如在使用层叠膜10或膜D时，能够在剥离胶黏性膜1时去除。剥离后的胶黏性膜1通常被废弃，因此异物附着于第1压敏胶黏剂层1b，由此从膜基材DA或膜D去除，直接与胶黏性膜1一起被废弃。并且，通过设置有胶黏性膜1，作为能够通过膜基材DA的模切而露出的第2压敏胶黏剂层2b的保护层发挥作用，例如能够防止异物附着于搬运或出货工序中的第2压敏胶黏剂层2b。In addition, according to the research of the present inventors, it is found that the adhesive film 1 has a first pressure-sensitive adhesive layer 1b, thereby inhibiting the peeling of the first support film 1a and the rigid material layer D2. And, according to the research of the present inventors, it is found that the adhesive film 1 has a first pressure-sensitive adhesive layer 1b, thereby effectively removing foreign matter (such as resin residue, etc.) attached to the film substrate DA or the film D during the manufacturing process. Therefore, the adhesive film 1 has a first pressure-sensitive adhesive layer 1b, thereby improving the yield rate in the die-cutting of the film substrate DA. Foreign matter can be removed when the adhesive film 1 is peeled off, for example, when using the laminated film 10 or the film D. The peeled adhesive film 1 is usually discarded, so the foreign matter is attached to the first pressure-sensitive adhesive layer 1b, thereby removed from the film substrate DA or the film D, and directly discarded together with the adhesive film 1. Furthermore, the adhesive film 1 functions as a protective layer for the second pressure-sensitive adhesive layer 2b exposed by die-cutting the film substrate DA, and can prevent foreign matter from adhering to the second pressure-sensitive adhesive layer 2b during the conveyance or shipping process, for example.

将膜基材DA模切为所期望的形状(例如圆形)时，可以沿着模切的所期望的形状的外缘，而在胶黏性膜1的表面形成第1切口部。第1切口部的切口深度例如小于胶黏性膜1的厚度，且可以为25μm以下。When the film substrate DA is die-cut into a desired shape (e.g., a circle), a first cut portion can be formed along the outer edge of the die-cut desired shape on the surface of the adhesive film 1. The cut depth of the first cut portion is, for example, less than the thickness of the adhesive film 1 and can be 25 μm or less.

(第3工序)(Step 3)

本工序是在膜D的热固性树脂层D1上依次层叠第2压敏胶黏剂层2b及第2支撑膜2a的工序(参考图3(a)、图3(b))。作为依次层叠第2压敏胶黏剂层2b及第2支撑膜2a的方法，例如可以举出以在膜D的热固性树脂层D1的整个表面覆盖具有第2支撑膜2a及设置于第2支撑膜2a上的第2压敏胶黏剂层2b的切割膜基材2A的方式配置，以所配置的切割膜基材2A成为所期望的形状(例如圆形)的方式，通过冲孔刀等在位置L2上从切割膜基材2A的上表面沿方向Y进行切口并模切((预)切、切断)的方法(参考图3(b)，第2预切加工)等。将切割膜基材2A层叠于膜D的热固性树脂层D1的表面的情况下，切割膜基材2A的第2压敏胶黏剂层2b的一部分可以与胶黏性膜1的第1压敏胶黏剂层1b接触(参考图3(b))，也可以不接触。并且，切割膜基材2A(切割膜2)可以与膜D的侧面接触。对切割膜基材2A进行模切时的切口可以到达至胶黏性膜1的一部分。This process is a process of sequentially stacking the second pressure-sensitive adhesive layer 2b and the second support film 2a on the thermosetting resin layer D1 of the film D (refer to Figure 3 (a), Figure 3 (b)). As a method for sequentially stacking the second pressure-sensitive adhesive layer 2b and the second support film 2a, for example, a method can be cited in which a cutting film substrate 2A having a second support film 2a and a second pressure-sensitive adhesive layer 2b disposed on the second support film 2a is arranged so as to cover the entire surface of the thermosetting resin layer D1 of the film D, and a method in which the arranged cutting film substrate 2A is cut and die-cut ((pre)cut, cut) is performed from the upper surface of the cutting film substrate 2A in a direction Y at a position L2 by a punching knife or the like so as to be in a desired shape (for example, a circle) (refer to Figure 3 (b), the second pre-cutting process), etc. When the dicing film substrate 2A is laminated on the surface of the thermosetting resin layer D1 of the film D, a portion of the second pressure-sensitive adhesive layer 2b of the dicing film substrate 2A may or may not be in contact with the first pressure-sensitive adhesive layer 1b of the adhesive film 1 (see FIG. 3( b)). Furthermore, the dicing film substrate 2A (dicing film 2) may be in contact with the side surface of the film D. The cut when the dicing film substrate 2A is die-cut may reach a portion of the adhesive film 1.

切割膜基材2A可以是割膜2的原膜。切割膜基材2A能够使用市售品。并且，切割膜基材2A例如能够制备构成第2压敏胶黏剂层2b的压敏胶黏剂(紫外线固化型压敏胶黏剂或非紫外线固化型压敏胶黏剂)的清漆(压敏胶黏剂清漆)，并将压敏胶黏剂清漆涂布于第2支撑膜2a上，然后加热干燥溶剂来进行去除而获得。将压敏胶黏剂清漆涂布于第2支撑膜2a上时使用的溶剂、压敏胶黏剂清漆的涂布方法、溶剂的去除方法等例如可以与将上述热固性树脂清漆涂布于支撑膜上时使用的溶剂、压敏胶黏剂清漆的涂布方法、溶剂的去除方法等相同。The cutting film substrate 2A can be the original film of the cutting film 2. The cutting film substrate 2A can use a commercial product. In addition, the cutting film substrate 2A can, for example, prepare a varnish (pressure-sensitive adhesive varnish) of a pressure-sensitive adhesive (UV-curable pressure-sensitive adhesive or non-UV-curable pressure-sensitive adhesive) constituting the second pressure-sensitive adhesive layer 2b, and apply the pressure-sensitive adhesive varnish on the second support film 2a, and then heat and dry the solvent to remove it. The solvent used when applying the pressure-sensitive adhesive varnish on the second support film 2a, the coating method of the pressure-sensitive adhesive varnish, the method of removing the solvent, etc. can be the same as the solvent used when applying the above-mentioned thermosetting resin varnish on the support film, the coating method of the pressure-sensitive adhesive varnish, the method of removing the solvent, etc.

将切割膜基材2A模切为所期望的形状(例如圆形)时，可以沿着模切的所期望的形状的外缘，而在胶黏性膜1的表面形成第2切口部。第2切口部的切口深度例如小于胶黏性膜1的厚度，且可以为25μm以下。When the dicing film substrate 2A is die-cut into a desired shape (e.g., a circle), a second cut portion can be formed along the outer edge of the die-cut desired shape on the surface of the adhesive film 1. The cut depth of the second cut portion is, for example, less than the thickness of the adhesive film 1 and can be 25 μm or less.

[半导体装置及其制造方法][Semiconductor device and method for manufacturing the same]

＜第1实施方式＞<First embodiment>

图4是示意地表示本发明的半导体装置的第1实施方式的剖视图。图4所示的半导体装置100具备：基板40；芯片T1(第1芯片)，配置于基板40的表面上；多个支撑片DXc，配置于基板40的表面上且芯片T1的周围；芯片T2(第2芯片)，配置于芯片T1的上方；黏合剂片Tc，通过芯片T2与多个支撑片DXc夹着；芯片T3、T4，层叠于芯片T2上；多个导线(wire)w，分别电连接基板40的表面上的电极(未图示)与芯片T1～T4；及密封件50，填充于芯片T1与芯片T2的间隙等。支撑片DXc可以是将膜D单片化的单片体的固化物。FIG4 is a cross-sectional view schematically showing a first embodiment of a semiconductor device of the present invention. The semiconductor device 100 shown in FIG4 comprises: a substrate 40; a chip T1 (first chip) disposed on the surface of the substrate 40; a plurality of support sheets DXc disposed on the surface of the substrate 40 and around the chip T1; a chip T2 (second chip) disposed above the chip T1; an adhesive sheet Tc sandwiched between the chip T2 and the plurality of support sheets DXc; chips T3 and T4 stacked on the chip T2; a plurality of wires w electrically connecting electrodes (not shown) on the surface of the substrate 40 and the chips T1 to T4, respectively; and a sealing member 50 filled in the gap between the chip T1 and the chip T2. The support sheet DXc may be a solidified product of a single-piece body obtained by singulating the film D.

在本实施方式中，通过多个支撑片DXc、芯片T2及位于支撑片DXc与芯片T2之间的黏合剂片Tc在基板40上构成支石墓结构。芯片T1与黏合剂片Tc分离。通过适当设定支撑片DXc的厚度，能够确保用于连接芯片T1的上表面与基板40的导线w的空间。芯片T1与黏合剂片Tc分离，由此能够防止由于与芯片T1连接的导线w的上部与芯片T2接触而导致的导线的w的短路。并且，由于不需要在与芯片T2接触的黏合剂片Tc嵌入导线，因此具有使黏合剂片Tc变薄的优点。In the present embodiment, a dolmen structure is formed on the substrate 40 by a plurality of support sheets DXc, a chip T2, and an adhesive sheet Tc located between the support sheet DXc and the chip T2. The chip T1 is separated from the adhesive sheet Tc. By appropriately setting the thickness of the support sheet DXc, it is possible to ensure space for the wire w for connecting the upper surface of the chip T1 with the substrate 40. The chip T1 is separated from the adhesive sheet Tc, thereby preventing a short circuit of the wire w caused by the upper part of the wire w connected to the chip T1 contacting the chip T2. In addition, since it is not necessary to embed the wire in the adhesive sheet Tc in contact with the chip T2, there is an advantage in making the adhesive sheet Tc thinner.

如图4所示，芯片T1与芯片T2之间的黏合剂片Tc覆盖芯片T2中的与芯片T1相对的区域R，并且从区域R连续延伸至芯片T2的边缘侧。即，1个黏合剂片Tc覆盖芯片T2的区域R，并且介于芯片T2与多个支撑片之间将它们黏合。另外，图4示出了黏合剂片Tc设置成覆盖芯片T2的整个一个面(下表面)的方式。然而，由于黏合剂片Tc在半导体装置100的制造过程中可能收缩，因此只要实质上覆盖芯片T2的整个一个面(下表面)即可，例如在芯片T2的边缘的一部分可以存在未被黏合剂片Tc覆盖的部位。图4中的芯片T2的下表面相当于芯片的背面。近年来，芯片的背面经常形成凹凸。通过芯片T2的背面的实质整体被黏合剂片Tc覆盖，能够抑制在芯片T2中产生裂痕或龟裂。As shown in FIG4 , the adhesive sheet Tc between the chip T1 and the chip T2 covers the region R of the chip T2 that is opposite to the chip T1, and extends continuously from the region R to the edge side of the chip T2. That is, one adhesive sheet Tc covers the region R of the chip T2, and is interposed between the chip T2 and a plurality of support sheets to bond them together. In addition, FIG4 shows a method in which the adhesive sheet Tc is arranged to cover the entire one surface (lower surface) of the chip T2. However, since the adhesive sheet Tc may shrink during the manufacturing process of the semiconductor device 100, it is sufficient to substantially cover the entire one surface (lower surface) of the chip T2. For example, a portion of the edge of the chip T2 may be not covered by the adhesive sheet Tc. The lower surface of the chip T2 in FIG4 is equivalent to the back side of the chip. In recent years, bumps and depressions are often formed on the back side of the chip. By substantially covering the entire back side of the chip T2 with the adhesive sheet Tc, cracks or fissures in the chip T2 can be suppressed.

基板40可以为有机基板，也可以为引线框架等金属基板。关于基板40，从抑制半导体装置100的翘曲的观点考虑，基板40的厚度例如为90～300μm，也可以为90～210μm。The substrate 40 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100 , the thickness of the substrate 40 is, for example, 90 to 300 μm, or 90 to 210 μm.

芯片T1例如是控制器芯片，通过黏合剂片T1c黏合于基板40且通过导线w与基板40电连接。俯视下的芯片T1的形状例如为矩形(正方形或长方形)。芯片T1的一边的长度例如为5mm以下，也可以为2～5mm或1～5mm。芯片T1的厚度例如为10～150μm，也可以为20～100μm。The chip T1 is, for example, a controller chip, which is bonded to the substrate 40 by an adhesive sheet T1c and electrically connected to the substrate 40 by a wire w. The shape of the chip T1 in a plan view is, for example, a rectangle (square or rectangular). The length of one side of the chip T1 is, for example, less than 5 mm, or may be 2 to 5 mm or 1 to 5 mm. The thickness of the chip T1 is, for example, 10 to 150 μm, or may be 20 to 100 μm.

芯片T2例如是记忆体芯片，经由黏合剂片Tc黏合于支撑片DXc上。在俯视下，芯片T2具有大于芯片T1的尺寸。在俯视观察时的芯片T2的形状例如为矩形(正方形或长方形)。芯片T2的一边的长度例如为20mm以下，也可以为4～20mm或4～12mm。芯片T2的厚度例如为10～170μm，也可以为20～120μm。另外，芯片T3、T4例如为记忆体芯片，经由黏合剂片Tc黏合于芯片T2上。芯片T3、T4的一边的长度与芯片T2相同即可，芯片T3、T4的厚度也与芯片T2相同即可。Chip T2 is, for example, a memory chip, and is bonded to support sheet DXc via adhesive sheet Tc. When viewed from above, chip T2 has a size larger than chip T1. The shape of chip T2 when viewed from above is, for example, rectangular (square or oblong). The length of one side of chip T2 is, for example, less than 20 mm, and may also be 4 to 20 mm or 4 to 12 mm. The thickness of chip T2 is, for example, 10 to 170 μm, and may also be 20 to 120 μm. In addition, chips T3 and T4 are, for example, memory chips, and are bonded to chip T2 via adhesive sheet Tc. The length of one side of chips T3 and T4 may be the same as that of chip T2, and the thickness of chips T3 and T4 may also be the same as that of chip T2.

支撑片DXc发挥在芯片T1的周围形成空间之间隔物(spacer)的作用。支撑片DXc从基板40依次具备由热固性树脂组成物的固化物形成的层(固化热固性树脂层的层)及刚性材料层。另外，如图5(a)所示，可以在芯片T1的两侧的分开的位置配置2个支撑片DXc(形状：长方形)，如图5(b)所示，可以在芯片T1的与角对应的位置分别配置1个支撑片DXc(形状：正方形、计4个)。在俯视下的支撑片DXc的一边的长度例如为20mm以下，可以为1～20mm或1～12mm。支撑片DXc的厚度(高度)例如为10～180μm，可以为20～120μm。The support sheet DXc plays the role of a spacer that forms a space around the chip T1. The support sheet DXc has a layer formed of a cured product of a thermosetting resin composition (a layer of a cured thermosetting resin layer) and a rigid material layer in sequence from the substrate 40. In addition, as shown in FIG. 5(a), two support sheets DXc (shape: rectangular) can be arranged at separate positions on both sides of the chip T1, and as shown in FIG. 5(b), one support sheet DXc (shape: square, 4 in total) can be arranged at each position corresponding to the corner of the chip T1. The length of one side of the support sheet DXc in a top view is, for example, less than 20 mm, and can be 1 to 20 mm or 1 to 12 mm. The thickness (height) of the support sheet DXc is, for example, 10 to 180 μm, and can be 20 to 120 μm.

接着，对半导体装置100的制造方法进行说明。本实施方式的制造方法具备以下(A)～(G)工序。本实施方式的制造方法可以进一步包括以下(H)工序。Next, a method for manufacturing the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps (A) to (G). The manufacturing method of this embodiment may further include the following step (H).

(A)准备支撑片形成用层叠膜10X(以下，有时简称为“层叠膜10X”。)的工序，该支撑片形成用层叠膜10X依次具备第1支撑膜1a、作为非紫外线固化型压敏胶黏剂层的第1压敏胶黏剂层1b、通过切割而单片化成多个支撑片的支撑片形成用膜DX(以下，有时简称为“膜DX”。)、第2压敏胶黏剂层2b及第2支撑膜2a，膜DX是具有热固性树脂层D1及刚性材料层D2的膜，刚性材料层D2具有高于热固性树脂层D1的刚性，膜DX中的刚性材料层D2层叠于第1压敏胶黏剂层上(参考图6)(A) A step of preparing a laminated film 10X for forming a support sheet (hereinafter, sometimes referred to as “laminated film 10X”), wherein the laminated film 10X for forming a support sheet comprises, in order, a first support film 1a, a first pressure-sensitive adhesive layer 1b as a non-ultraviolet curing pressure-sensitive adhesive layer, a support sheet forming film DX (hereinafter, sometimes referred to as “film DX”) which is singulated into a plurality of support sheets by cutting, a second pressure-sensitive adhesive layer 2b, and a second support film 2a, wherein the film DX is a film having a thermosetting resin layer D1 and a rigid material layer D2, wherein the rigid material layer D2 has a higher rigidity than the thermosetting resin layer D1, and the rigid material layer D2 in the film DX is laminated on the first pressure-sensitive adhesive layer (see FIG. 6 ).

(B)通过切割膜DX，在第2压敏胶黏剂层2b的表面上形成多个支撑片DXa的工序(参考图7(b))(B) Step of forming a plurality of support sheets DXa on the surface of the second pressure-sensitive adhesive layer 2b by cutting the film DX (see FIG. 7(b))

(C)从第2压敏胶黏剂层2b拾取支撑片DXa的工序(参考图7(d))(C) Step of Picking Up the Support Sheet DXa from the Second Pressure-Sensitive Adhesive Layer 2b (See FIG. 7(d))

(D)在基板40上配置芯片T1的工序(D) Step of arranging the chip T1 on the substrate 40

(E)在基板40上且在芯片T1的周围或应配置有芯片T1的区域的周围配置多个支撑片DXa的工序(参考图8)(E) A step of arranging a plurality of supporting sheets DXa on the substrate 40 around the chip T1 or around the area where the chip T1 is to be arranged (see FIG. 8 )

(F)准备具备芯片T2及设置于芯片T2的一个面上的黏合剂片Ta的附有黏合剂片的芯片T2a的工序(参考图9)(F) Step of Preparing a Chip T2a with an Adhesive Sheet Which Has a Chip T2 and an Adhesive Sheet Ta Provided on One Surface of the Chip T2 (See FIG. 9)

(G)通过在多个支撑片DXc的表面上配置附有黏合剂片的芯片T2a来构建支石墓结构的工序(参考图10)(G) Step of constructing a dolmen structure by arranging chips T2a with adhesive sheets on the surfaces of a plurality of support sheets DXc (see FIG. 10 )

(H)用密封件50密封芯片T1与芯片T2的间隙等的工序(参考图4)(H) Step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see FIG. 4 )

(A)工序(A) Process

(A)工序是准备层叠膜10X的工序。层叠膜10X能够使用上述层叠膜10。此时，膜D成为膜DX。使用层叠膜10X时，胶黏性膜1在适当的时机剥离。剥离胶黏性膜1的时机例如可以在(A)工序与(B)工序之间。The step (A) is a step of preparing the laminated film 10X. The laminated film 10X can use the laminated film 10 described above. At this time, the film D becomes the film DX. When the laminated film 10X is used, the adhesive film 1 is peeled off at an appropriate time. The timing of peeling the adhesive film 1 can be, for example, between the steps (A) and (B).

(B)工序及(C)工序(B) process and (C) process

(B)工序是通过切割膜DX，在第2压敏胶黏剂层2b的表面上形成多个支撑片DXa的工序，(C)工序是从第2压敏胶黏剂层2b拾取支撑片DXa的工序。如图7(a)所示，在从层叠膜10X剥离胶黏性膜1的层叠体贴附切割环DR。即，设为在层叠膜10X的第2压敏胶黏剂层2b贴附切割环DR，且在切割环DR的内侧配置有膜DX的状态。在该状态下，通过切割膜DX而单片化(参考图7(b))。由此，能够从膜DX获得多个支撑片DXa。其后、第2压敏胶黏剂层2b为紫外线固化型压敏胶黏剂层的情况下，对第2压敏胶黏剂层2b照射紫外线，由此降低第2压敏胶黏剂层2b与支撑片DXa之间的黏合力(adhesive force)。如图7(c)所示，通过扩展第2支撑膜2a，使支撑片DXa相互分离。如图7(d)所示，通过利用上推夹具42将支撑片DXa上推，使支撑片DXa从第2压敏胶黏剂层2b剥离，并且利用吸附夹头44吸附来拾取支撑片DXa。另外，通过加热切割前的膜DX或拾取前的支撑片DXa，可以进行热固性树脂层D1的固化反应。通过拾取时适当地固化支撑片DXa，趋于拾取性优异。用于单片化的切口优选为形成至膜DX的外缘。The (B) process is a process of forming a plurality of support sheets DXa on the surface of the second pressure-sensitive adhesive layer 2b by cutting the film DX, and the (C) process is a process of picking up the support sheet DXa from the second pressure-sensitive adhesive layer 2b. As shown in FIG7(a), a cutting ring DR is attached to the laminated body of the adhesive film 1 peeled off from the laminated film 10X. That is, a state is set in which a cutting ring DR is attached to the second pressure-sensitive adhesive layer 2b of the laminated film 10X, and a film DX is arranged on the inner side of the cutting ring DR. In this state, the film DX is cut into pieces (refer to FIG7(b)). Thus, a plurality of support sheets DXa can be obtained from the film DX. Thereafter, when the second pressure-sensitive adhesive layer 2b is a UV-curable pressure-sensitive adhesive layer, the second pressure-sensitive adhesive layer 2b is irradiated with ultraviolet rays, thereby reducing the adhesive force (adhesive force) between the second pressure-sensitive adhesive layer 2b and the support sheet DXa. As shown in FIG. 7( c ), the second support film 2a is expanded to separate the support sheets DXa from each other. As shown in FIG. 7( d ), the support sheet DXa is pushed up by the push-up fixture 42 to peel the support sheet DXa from the second pressure-sensitive adhesive layer 2b, and the support sheet DXa is picked up by adsorption by the adsorption chuck 44. In addition, by heating the film DX before cutting or the support sheet DXa before picking up, a curing reaction of the thermosetting resin layer D1 can be performed. By properly curing the support sheet DXa when picking up, the pick-up property tends to be excellent. The cut for singulation is preferably formed to the outer edge of the film DX.

(D)工序(D) Process

(D)工序是在基板40上配置芯片T1的工序。例如，首先，在基板40上的规定位置经由黏合剂片T1c配置芯片T1。其后、芯片T1通过导线w与基板40电连接。(D)工序可以是在(E)工序之前进行的工序，也可以在(A)工序之前、(A)工序与(B)工序之间、(B)工序与(C)工序之间或(C)工序与(E)工序之间。The (D) step is a step of placing the chip T1 on the substrate 40. For example, first, the chip T1 is placed at a predetermined position on the substrate 40 via the adhesive sheet T1c. Thereafter, the chip T1 is electrically connected to the substrate 40 via the wire w. The (D) step may be a step performed before the (E) step, or may be performed before the (A) step, between the (A) step and the (B) step, between the (B) step and the (C) step, or between the (C) step and the (E) step.

(E)工序(E) Process

(E)工序是在基板40上且在芯片T1的周围或应配置有芯片T1的区域的周围配置多个支撑片DXa的工序。经过(E)工序，制作图6所示的结构体60。结构体60具备基板40、配置于其表面上的芯片T1及多个支撑片DXa。支撑片DXa的配置能够通过压接处理来进行。压接处理例如能够在80～180℃、0.01～0.50MPa的条件下经0.5～3.0秒来实施。另外，支撑片DXa可以在(E)工序时刻完全固化而成为支撑片DXc，也可以在该时刻未完全固化。支撑片DXa优选为在开始(G)工序前的时刻完全固化而成为支撑片DXc。The (E) step is a step of configuring a plurality of support sheets DXa on the substrate 40 and around the chip T1 or around the area where the chip T1 should be configured. After the (E) step, the structure 60 shown in Figure 6 is produced. The structure 60 includes a substrate 40, a chip T1 configured on its surface, and a plurality of support sheets DXa. The configuration of the support sheet DXa can be performed by a crimping process. The crimping process can be performed, for example, under the conditions of 80 to 180°C and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. In addition, the support sheet DXa may be completely cured at the time of the (E) step to become the support sheet DXc, or it may not be completely cured at this time. The support sheet DXa is preferably completely cured to become the support sheet DXc before starting the (G) step.

(F)工序(F) Process

(F)工序准备具备芯片T2及设置于芯片T2的一个面上的黏合剂片Ta的附有黏合剂片的芯片T2a的工序。附有黏合剂片的芯片T2a具备芯片T2及设置于其一个表面的黏合剂片Ta。附有黏合剂片的芯片T2a例如能够使用半导体晶圆及切割晶粒接合(dicing/die-bonding)一体型膜，并经过切割工序及拾取工序而获得。(F) Step A step of preparing a chip T2a with an adhesive sheet, which includes a chip T2 and an adhesive sheet Ta provided on one surface of the chip T2. The chip T2a with an adhesive sheet includes a chip T2 and an adhesive sheet Ta provided on one surface thereof. The chip T2a with an adhesive sheet can be obtained by, for example, using a semiconductor wafer and a dicing/die-bonding integrated film, and undergoing a dicing step and a pick-up step.

(G)工序(G) Process

(G)工序是以黏合剂片Ta与多个支撑片DXc的上表面接触的方式，在芯片T1的上方配置附有黏合剂片的芯片T2a的工序。具体而言，在支撑片DXc的上表面经由黏合剂片Ta压接芯片T2。压接处理例如能够在80～180℃、0.01～0.50MPa的条件下经0.5～3.0秒来实施。接着，通过加热使黏合剂片Ta固化。固化处理例如能够在60～175℃，0.01～1.0MPa的条件下经5分钟以上来实施。由此，黏合剂片Ta固化而成为黏合剂片Tc。经过该工序，在基板40上构建支石墓结构(参考图10)。芯片T1与附有黏合剂片的芯片T2a分离，由此能够防止由于导线w的上部与芯片T2接触而导致的导线的w的短路。并且，由于不需要在与芯片T2接触的黏合剂片Ta嵌入导线，因此具有减薄黏合剂片Ta的优点。The (G) step is a step of arranging a chip T2a with an adhesive sheet above the chip T1 in such a manner that the adhesive sheet Ta contacts the upper surfaces of a plurality of support sheets DXc. Specifically, the chip T2 is crimped to the upper surface of the support sheet DXc via the adhesive sheet Ta. The crimping process can be performed, for example, at 80 to 180° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. Next, the adhesive sheet Ta is cured by heating. The curing process can be performed, for example, at 60 to 175° C. and 0.01 to 1.0 MPa for more than 5 minutes. Thus, the adhesive sheet Ta is cured to become the adhesive sheet Tc. Through this step, a dolmen structure is constructed on the substrate 40 (see FIG10 ). The chip T1 is separated from the chip T2a with the adhesive sheet, thereby preventing a short circuit of the wire w caused by the upper part of the wire w contacting the chip T2. Furthermore, since there is no need to embed a wire in the adhesive sheet Ta in contact with the chip T2, there is an advantage in that the adhesive sheet Ta can be made thinner.

在(G)工序后且(H)工序前，在芯片T2上经由黏合剂片配置芯片T3，进而在芯片T3上经由黏合剂片配置芯片T4。黏合剂片只要是与上述黏合剂片Ta相同的热固性树脂组成物即可，通过加热固化成为黏合剂片Tc(参考图4)。另一方面，利用导线w分别电连接芯片T2、T3、T4与基板40。另外，层叠于芯片T1的上方的芯片的个数并不限定于本实施方式的3个，能够适当设定。After step (G) and before step (H), chip T3 is arranged on chip T2 via an adhesive sheet, and chip T4 is arranged on chip T3 via an adhesive sheet. The adhesive sheet can be made of the same thermosetting resin composition as the adhesive sheet Ta, and is cured by heating to become adhesive sheet Tc (see FIG. 4 ). On the other hand, the chips T2, T3, and T4 are electrically connected to the substrate 40 by wires w. In addition, the number of chips stacked on top of chip T1 is not limited to 3 in the present embodiment, and can be set appropriately.

(H)工序(H) Process

(H)工序是用密封件50密封芯片T1与芯片T2的间隙等的工序。经过(H)工序，能够获得图4所示的半导体装置100。The step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. Through the step (H), the semiconductor device 100 shown in FIG. 4 can be obtained.

＜第2实施方式＞<Second embodiment>

图11是示意地表示本发明的半导体装置的第2实施方式的剖视图。第1实施方式的半导体装置100是芯片T1与黏合剂片Tc分离的形态，与此相对，本实施方式的半导体装置200是芯片T1与黏合剂片Tc接触的形态。即，黏合剂片Tc与芯片T1的上表面及支撑片DXc的上表面接触。例如，通过适当设定膜DX的厚度，能够使芯片T1的上表面的位置与支撑片DXc的上表面的位置一致。FIG. 11 is a cross-sectional view schematically showing a second embodiment of a semiconductor device of the present invention. The semiconductor device 100 of the first embodiment is a form in which the chip T1 and the adhesive sheet Tc are separated. In contrast, the semiconductor device 200 of the present embodiment is a form in which the chip T1 and the adhesive sheet Tc are in contact. That is, the adhesive sheet Tc is in contact with the upper surface of the chip T1 and the upper surface of the support sheet DXc. For example, by appropriately setting the thickness of the film DX, the position of the upper surface of the chip T1 can be made consistent with the position of the upper surface of the support sheet DXc.

在半导体装置200中，芯片T1与基板40进行倒装芯片连接，而不进行导线接合。另外，通过设为如导线w嵌入黏合剂片Ta的构成，能够设为在基板40上导线接合芯片T1的形态，从而能够设为芯片T1与黏合剂片Tc接触的形态。黏合剂片Ta与芯片T2一起构成附有黏合剂片的芯片T2a(参考图9)。In the semiconductor device 200, the chip T1 is connected to the substrate 40 by flip chip connection without wire bonding. In addition, by setting a configuration such as embedding the wire w in the adhesive sheet Ta, the chip T1 can be wire-bonded on the substrate 40, and the chip T1 can be in contact with the adhesive sheet Tc. The adhesive sheet Ta and the chip T2 together constitute a chip T2a with an adhesive sheet (see FIG. 9 ).

如图11所示，芯片T1与芯片T2之间的黏合剂片Tc覆盖芯片T2中的与芯片T1相对的区域R，并且从区域R连续延伸至芯片T2的边缘侧。这种1个黏合剂片Tc覆盖芯片T2的区域R，并且介于芯片T2与多个支撑片之间并接着它们。图11中的芯片T2的下表面相当于背面。如上述，近年来芯片的背面经常形成凹凸。芯片T2的背面的实质性整体被黏合剂片Tc覆盖，由此即使芯片T1的上表面与黏合剂片Tc接触，也能够抑制在芯片T2上产生裂纹或龟裂。As shown in FIG11 , the adhesive sheet Tc between the chip T1 and the chip T2 covers the region R of the chip T2 that is opposite to the chip T1, and extends continuously from the region R to the edge side of the chip T2. This adhesive sheet Tc covers the region R of the chip T2, and is interposed between the chip T2 and a plurality of support sheets and connects them. The lower surface of the chip T2 in FIG11 corresponds to the back surface. As mentioned above, in recent years, the back surface of the chip has often formed bumps and depressions. The substantially entire back surface of the chip T2 is covered by the adhesive sheet Tc, so that even if the upper surface of the chip T1 contacts the adhesive sheet Tc, cracks or fissures on the chip T2 can be suppressed.

以上，对本发明的实施方式进行了详细说明，但本发明并不限定于上述实施方式。例如，在上述实施方式中，例示出第2压敏胶黏剂层2b为紫外线固化型压敏胶黏剂层的情况，但是第2压敏胶黏剂层2b可以是非紫外线固化型压敏胶黏剂层。The embodiments of the present invention are described in detail above, but the present invention is not limited to the above embodiments. For example, in the above embodiments, the second pressure-sensitive adhesive layer 2b is an ultraviolet curing pressure-sensitive adhesive layer, but the second pressure-sensitive adhesive layer 2b may be a non-ultraviolet curing pressure-sensitive adhesive layer.

实施例Example

以下，利用实施例说明本发明，但本发明并不限定于它们的实施例。Hereinafter, the present invention will be described using examples, but the present invention is not limited to these examples.

(实施例1)(Example 1)

[单片体形成用层叠膜的制作][Preparation of laminated film for forming a monolithic body]

＜热固性树脂清漆的制备＞＜Preparation of thermosetting resin varnish＞

首先，对作为环氧树脂的N-500P-10(商品名，DIC Corporation制造，邻甲酚酚醛清漆型环氧树脂，环氧当量：204g/eq，软化点：75～85℃)10质量份及作为固化促进剂的Curesol 2PZ-CN(商品名，SHIKOKU CHEMICALS CORPORATION制造、1-氰乙基-2-苯基咪唑)0.02质量份的混合物，以清漆总量为基准加入环己酮，以使成为固体成分浓度16质量％。接着，在混合物中加入作为偶联剂的A-189(商品名，Nippon Unicar Company Limited制造，γ-环氧丙氧基丙基三甲氧基硅烷)0.4质量份及A-1160(商品名，Nippon Unicar CompanyLimited制造，γ-脲基丙基三乙氧基硅烷)1.3质量份，进一步加入作为无机填料的R972(商品名，NIPPON AEROSIL CO.,LTD.制造，二氧化硅料)8.3质量份、作为弹性体的SG-P3(商品名，Nagase ChemteX Corporation制造，含环氧基丙烯酸树脂)69质量份及作为固化剂的MEH-7800M(商品名，Meiwa Chemical Industry Co.,Ltd制造，苯基芳烷型酚醛树脂，羟基当量：174g/eq，软化点：80℃)11质量份并搅拌混合而获得了热固性树脂清漆。First, to a mixture of 10 parts by mass of N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolac type epoxy resin, epoxy equivalent: 204 g/eq, softening point: 75-85° C.) as an epoxy resin and 0.02 parts by mass of Curesol 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole) as a curing accelerator, cyclohexanone was added so as to have a solid content concentration of 16% by mass based on the total amount of the varnish. Next, 0.4 parts by mass of A-189 (trade name, manufactured by Nippon Unicar Company Limited, γ-glycidoxypropyltrimethoxysilane) and 1.3 parts by mass of A-1160 (trade name, manufactured by Nippon Unicar Company Limited, γ-ureidopropyltriethoxysilane) as coupling agents were added to the mixture, and 8.3 parts by mass of R972 (trade name, manufactured by NIPPON AEROSIL CO., LTD., silica material) as an inorganic filler, 69 parts by mass of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, epoxy-containing acrylic resin) as an elastomer, and 11 parts by mass of MEH-7800M (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., phenylarane type phenolic resin, hydroxyl equivalent: 174 g/eq, softening point: 80° C.) as a curing agent were added and stirred to obtain a thermosetting resin varnish.

＜单片体形成用膜基材的制作＞<Preparation of film substrate for monolithic body formation>

将所获得的接着层形成用清漆涂布于厚度25μm的聚酰亚胺膜(UBE Corporation制造，UPIREX 25SGA)的一个面上，并以140℃的条件加热干燥5分钟，由此形成厚度20μm的B阶段状态下的热固性树脂层，从而获得了聚酰亚胺膜及热固性树脂层的二层单片体形成用膜基材。The obtained varnish for forming the bonding layer is applied to one surface of a polyimide film (manufactured by UBE Corporation, UPIREX 25SGA) with a thickness of 25 μm, and heated and dried at 140°C for 5 minutes to form a thermosetting resin layer in the B stage state with a thickness of 20 μm, thereby obtaining a film substrate for forming a two-layer monolithic body of a polyimide film and a thermosetting resin layer.

＜第1层叠体及第2层叠体的制作＞<Production of the first laminate and the second laminate>

在所获得的单片体形成用膜基材的未形成有热固性树脂层的聚酰亚胺膜面上配置具有压敏型压敏胶黏剂层的胶黏性膜(商品名：Cosmotac系列，Cosmotec Co.,Ltd.制造，第1支撑膜的厚度：50μm，第1压敏胶黏剂层的厚度：7μm，整个胶黏性膜的厚度：57μm)的压敏型压敏胶黏剂层侧，并贴合单片体形成用膜基材与胶黏性膜，由此获得了第1层叠体。在所获得的第1层叠体中，胶黏性膜的切口深度(第1切口部的切口深度)调整为10μm以下，并对单片体形成用膜基材进行了φ335mm的圆形模切加工(第1预切加工)。之后，通过去除单片体形成用膜基材的不需要部分，而制作了具备单片体形成用膜的第2层叠体。On the polyimide film surface of the obtained monolithic body forming film substrate on which the thermosetting resin layer is not formed, an adhesive film (trade name: Cosmotac series, manufactured by Cosmotec Co., Ltd., thickness of the first support film: 50 μm, thickness of the first pressure-sensitive adhesive layer: 7 μm, thickness of the entire adhesive film: 57 μm) having a pressure-sensitive pressure-sensitive adhesive layer is arranged, and the monolithic body forming film substrate and the adhesive film are bonded together to obtain the first laminate. In the obtained first laminate, the cut depth of the adhesive film (cut depth of the first cut portion) is adjusted to less than 10 μm, and the monolithic body forming film substrate is subjected to a circular die cutting process (first pre-cutting process) of φ335 mm. Thereafter, the second laminate having a monolithic body forming film is produced by removing the unnecessary portion of the monolithic body forming film substrate.

＜单片体形成用层叠膜的制作＞＜Production of laminated film for forming a monolithic body＞

准备具有压敏型压敏胶黏剂层的切割膜基材(第2支撑膜的厚度：100μm，第2压敏胶黏剂层的厚度：10μm，整个切割膜基材的厚度：110μm)，在上述获得的第2层叠体中的单片体形成用膜的热固性树脂层上配置切割膜基材的压敏型压敏胶黏剂层侧，并以25℃、线压1kg/cm、速度0.5m/分钟的条件贴附。接着，胶黏性膜的切口深度(第2切口部的切口深度)调整为10μm以下，对切割膜基材以与单片体形成用膜同心圆状进行φ370mm的圆形模切加工(第2预切加工)，而制作了实施例1的单片体形成用层叠膜。A dicing film substrate having a pressure-sensitive adhesive layer was prepared (the thickness of the second support film: 100 μm, the thickness of the second pressure-sensitive adhesive layer: 10 μm, and the thickness of the entire dicing film substrate: 110 μm), and the pressure-sensitive adhesive layer side of the dicing film substrate was arranged on the thermosetting resin layer of the monolithic body forming film in the second laminate obtained above, and attached at 25°C, a linear pressure of 1 kg/cm, and a speed of 0.5 m/min. Next, the cut depth of the adhesive film (the cut depth of the second cut portion) was adjusted to less than 10 μm, and the dicing film substrate was subjected to a circular die cutting process of φ370 mm in a concentric circle with the monolithic body forming film (second pre-cutting process), thereby producing the monolithic body forming laminated film of Example 1.

(比较例1)(Comparative Example 1)

在单片体形成用膜基材的制作中，在聚酰亚胺膜的两面形成厚度20μm的B阶段状态下的热固性树脂层，而获得了具有2个热固性树脂层及配置成夹在该热固性树脂层的聚酰亚胺膜的3层单片体形成用膜基材。除了将2层单片体形成用膜基材变更为3层单片体形成用膜基材，且将具有压敏型压敏胶黏剂层的胶黏性膜并更为3层单片体形成用膜基材的热固性树脂层具有胶黏性，而不具有压敏型压敏胶黏剂层的第1支撑膜(聚对苯二甲酸乙二酯(PET)膜)以外，以与实施例1相同的方式，制作了比较例1的单片体形成用层叠膜。In the preparation of the film substrate for forming a monolithic body, a thermosetting resin layer in a B-stage state with a thickness of 20 μm was formed on both sides of the polyimide film, and a three-layer monolithic body forming film substrate having two thermosetting resin layers and a polyimide film arranged to sandwich the thermosetting resin layer was obtained. The monolithic body forming laminated film of Comparative Example 1 was prepared in the same manner as in Example 1, except that the two-layer monolithic body forming film substrate was changed to a three-layer monolithic body forming film substrate, and the adhesive film having a pressure-sensitive pressure-sensitive adhesive layer was changed to a first supporting film (polyethylene terephthalate (PET) film) having no pressure-sensitive pressure-sensitive adhesive layer and the thermosetting resin layer of the three-layer monolithic body forming film substrate had adhesiveness.

[单片体形成用层叠膜的评价][Evaluation of laminated film for forming a monolithic body]

(剥离强度的测定)(Determination of peel strength)

·第1剥离强度(胶黏性膜相对于单片体形成用膜的30°剥离强度)的测定· Measurement of the first peel strength (30° peel strength of the adhesive film with respect to the film for forming a single-piece body)

使用实施例1的单片体形成用层叠膜，测定了第1剥离强度。第1剥离强度通过以下方法来测定。首先，通过将单片体形成用层叠膜以宽度25mm×长度100mm切出来制作了测定试样。接着，从测定试样剥离切割膜，并在金属制支撑板上固定了测定试样的单片体形成用膜侧。在固定测定试样的状态下，能够通过在测定温度25℃、剥离角度30°及剥离速度60mm/分钟的条件下剥下胶黏性膜来测定了第1剥离强度。第1剥离强度为0.15N/25mm。The first peel strength was measured using the laminated film for forming a monolithic body of Example 1. The first peel strength was measured by the following method. First, a measurement sample was prepared by cutting the laminated film for forming a monolithic body with a width of 25 mm and a length of 100 mm. Next, the cut film was peeled off from the measurement sample, and the monolithic body forming film side of the measurement sample was fixed on a metal support plate. With the measurement sample fixed, the first peel strength was measured by peeling off the adhesive film under the conditions of a measurement temperature of 25°C, a peeling angle of 30°, and a peeling speed of 60 mm/min. The first peel strength was 0.15N/25mm.

·第2剥离强度(切割膜相对于单片体形成用膜的30°剥离强度)的测定·Measurement of the second peel strength (30° peel strength of the dicing film with respect to the film for forming a single piece)

使用实施例1的单片体形成用层叠膜，测定了第2剥离强度。第2剥离强度通过以下方法来测定。首先，通过将单片体形成用层叠膜以宽度25mm×长度100mm切出来制作了测定试样。接着，从测定试样剥离胶黏性膜，并在金属制支撑板上固定了测定试样的单片体形成用膜侧。在固定测定试样的状态下，能够通过在测定温度25℃、剥离角度30°及剥离速度60mm/分钟的条件下剥下切割膜来测定了第2剥离强度。第2剥离强度为3.6N/25mm。The second peel strength was measured using the laminated film for forming a single piece of Example 1. The second peel strength was measured by the following method. First, a measurement sample was prepared by cutting the laminated film for forming a single piece of body into a width of 25 mm × a length of 100 mm. Next, the adhesive film was peeled off from the measurement sample, and the single piece forming film side of the measurement sample was fixed on a metal support plate. While the measurement sample was fixed, the second peel strength was measured by peeling off the diced film under the conditions of a measurement temperature of 25°C, a peeling angle of 30°, and a peeling speed of 60 mm/min. The second peel strength was 3.6N/25mm.

(单片体的制作)(Manufacturing of a single piece)

分别使用实施例1及比较例1的单片体形成用层叠膜，并以以下工序制作了单片体。从单片体形成用层叠膜剥离胶黏性膜，并在其上以25℃的条件贴附了切割环。接着，使用用于进行叶片切割的装置的切割机(Full Auto Dicer DF6361，DISCO CORPORATION制造)，将单片体形成用层叠膜利用叶片(ZH05-SD4800-N1-50 DD，DISCO CORPORATION制造)在高度90μm、叶片转速3万圈/分钟、叶片进行速度30mm/秒的单切条件下单片化而获得实施例1及比较例1的单片体。The laminated films for forming a monolithic body of Example 1 and Comparative Example 1 were used respectively, and a monolithic body was produced by the following process. The adhesive film was peeled off from the laminated film for forming a monolithic body, and a dicing ring was attached thereto at 25°C. Next, using a dicing machine (Full Auto Dicer DF6361, manufactured by DISCO CORPORATION) for blade dicing, the laminated film for forming a monolithic body was singulated using a blade (ZH05-SD4800-N1-50 DD, manufactured by DISCO CORPORATION) under the conditions of a height of 90 μm, a blade rotation speed of 30,000 revolutions/minute, and a blade speed of 30 mm/second to obtain the monolithic bodies of Example 1 and Comparative Example 1.

(单片体的热固性树脂层的剥离评价)(Evaluation of peeling of thermosetting resin layer of single sheet)

对所获得的单片体的表面(实施例1的个片化体：聚酰亚胺膜侧的表面、比较例1的单片体：热固性树脂层侧的表面)利用光学显微镜的同轴落射观察法对热固性树脂层的剥离距离进行了观察。在此，剥离距离是指从单片体的端部至剥离了热固性树脂层的部分的距离成为最大的距离的N＝10的平均值。在实施例1的单片体中，不存在热固性树脂层，所以未观察到热固性树脂层的剥离。另一方面，在比较例1的单片体中，剥离距离为31μm。The peeling distance of the thermosetting resin layer was observed by coaxial incident observation using an optical microscope on the surface of the obtained monolithic body (the monolithic body of Example 1: the surface on the polyimide film side, the monolithic body of Comparative Example 1: the surface on the thermosetting resin layer side). Here, the peeling distance refers to the average value of N=10 where the distance from the end of the monolithic body to the part where the thermosetting resin layer is peeled off is the maximum distance. In the monolithic body of Example 1, there is no thermosetting resin layer, so the peeling of the thermosetting resin layer is not observed. On the other hand, in the monolithic body of Comparative Example 1, the peeling distance is 31μm.

(单片体的切断面观察)(Observation of the cross section of a single piece)

利用光学显微镜观察所获得的单片体的切断面(侧面)，并测定了切屑(毛边)的最大高度N＝5的平均值。在实施例1的单片化体中，切屑(毛边)的最大高度的平均值为6.0μm，与此相对，在比较例1的单片化体中，切屑(毛边)的最大高度的平均值为37.8μm。The cut surface (side surface) of the obtained monolithic body was observed by an optical microscope, and the average value of the maximum height of the chips (burrs) was measured for N = 5. In the monolithic body of Example 1, the average value of the maximum height of the chips (burrs) was 6.0 μm, while in the monolithic body of Comparative Example 1, the average value of the maximum height of the chips (burrs) was 37.8 μm.

依据以上，确认到具备通过切割而单片化成多个单片体的单片体形成用膜的单片体形成用层叠膜即本发明的单片体形成用层叠膜能够充分抑制切割单片体形成用膜而单片化时的不良情况。From the above, it was confirmed that the laminated film for forming a single piece including a single piece forming film which is separated into a plurality of single pieces by dicing, that is, the laminated film for forming a single piece of the present invention can sufficiently suppress the malfunction when the single piece forming film is cut into pieces.

符号说明Explanation of symbols

1-胶黏性膜，1a-第1支撑膜，1b-第1压敏胶黏剂层，2-切割膜，2A-切割膜基材，2a-第2支撑膜，2b-第2压敏胶黏剂层，10-单片体形成用层叠膜，10X-支撑片形成用层叠膜，20-第1层叠体，30-第2层叠体，40-基板，50-密封件，60-结构体，100,200-半导体装置，D-单片体形成用膜，DA-单片体形成用膜基材，DX-支撑片形成用膜，D1-热固性树脂层，D2-刚性材料层，DXa-支撑片，DXc-支撑片(固化物)，R-区域，T1、T2、T3、T4-芯片，T2a-附有黏合剂片的芯片，Ta-黏合剂片，Tc-黏合剂片(固化物)。1-adhesive film, 1a-first supporting film, 1b-first pressure-sensitive adhesive layer, 2-dicing film, 2A-dicing film substrate, 2a-second supporting film, 2b-second pressure-sensitive adhesive layer, 10-laminated film for forming a monolithic body, 10X-laminated film for forming a supporting sheet, 20-first laminate, 30-second laminate, 40-substrate, 50-sealant, 60-structure, 100, 200-semiconductor device, D-film for forming a monolithic body, DA-film substrate for forming a monolithic body, DX-film for forming a supporting sheet, D1-thermosetting resin layer, D2-rigid material layer, DXa-supporting sheet, DXc-supporting sheet (cured product), R-region, T1, T2, T3, T4-chip, T2a-chip with adhesive sheet, Ta-adhesive sheet, Tc-adhesive sheet (cured product).

Claims (4)

1. A laminated film for monolithic formation, which comprises, in order:
1 st support film;
a 1 st pressure-sensitive adhesive layer which is a non-ultraviolet curable pressure-sensitive adhesive layer;
a film for forming a sheet body, which is cut into a plurality of sheet bodies;
A2 nd pressure-sensitive adhesive layer; and
A2 nd support film, which is arranged on the bottom surface of the first support film,
The film for monolithic formation is a film having a thermosetting resin layer and a rigid material layer having higher rigidity than the thermosetting resin layer,
The rigid material layer in the film for monolithic formation is laminated on the 1 st pressure-sensitive adhesive layer.
2. The laminated film for forming a sheet according to claim 1, wherein,
The rigid material layer is a polyimide layer.
3. A method for producing the laminated film for monolithic formation according to claim 1 or 2, comprising:
a step of preparing a1 st laminate including the 1 st support film, the 1 st pressure-sensitive adhesive layer, and a film substrate for monolithic formation in this order;
A step of die-cutting the film base material for single sheet formation in the 1 st laminate to produce a 2 nd laminate having the film for single sheet formation; and
And a step of sequentially laminating the 2 nd pressure-sensitive adhesive layer and the 2 nd support film on the single-sheet forming film of the 2 nd laminate.
4. A method of manufacturing a semiconductor device having a stone tomb structure, the stone tomb structure comprising: a substrate; a1 st chip disposed on the substrate; a plurality of support pieces arranged on the substrate and around the 1 st chip; and a2 nd chip supported by the plurality of support pieces and arranged so as to cover the 1 st chip, the method of manufacturing the semiconductor device including:
(A) A step of preparing a support sheet-forming laminated film comprising, in order, a1 st support film, a1 st pressure-sensitive adhesive layer as a non-ultraviolet-curable pressure-sensitive adhesive layer, a support sheet-forming film that is singulated by dicing into a plurality of support sheets, a 2 nd pressure-sensitive adhesive layer, and a 2 nd support film, wherein the support sheet-forming film is a film having a thermosetting resin layer and a rigid material layer, the rigid material layer having a higher rigidity than the thermosetting resin layer, and the rigid material layer in the support sheet-forming film is laminated on the 1 st pressure-sensitive adhesive layer;
(B) A step of forming a plurality of support sheets on the surface of the 2 nd pressure-sensitive adhesive layer by cutting the support sheet-forming film;
(C) A step of picking up the support sheet from the 2 nd pressure-sensitive adhesive layer;
(D) A step of disposing a1 st chip on a substrate;
(E) A step of disposing a plurality of support pieces on the substrate around the 1 st chip or around a region where the 1 st chip is to be disposed;
(F) A step of preparing a chip with an adhesive sheet, the chip having a 2 nd chip and the adhesive sheet provided on one surface of the 2 nd chip; and
(G) And a step of constructing a stone tomb structure by disposing the adhesive-sheet-attached chips on the surfaces of the plurality of support sheets.
CN202280088419.XA 2022-01-12 2022-12-20 Laminated film for forming a monolithic body, method for manufacturing the same, and method for manufacturing a semiconductor device Pending CN118591870A (en)

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JP2022-003133 2022-01-12
PCT/JP2022/046955 WO2023136059A1 (en) 2022-01-12 2022-12-20 Multilayer film for individualized piece formation, method for producing same, and method for producing semiconductor device

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