CN118629880A - A method for manufacturing a power chip sintering module, a power chip sintering module, and a carrier jig - Google Patents

Abstract

The present application relates to the technical field of power chips, and discloses a method for manufacturing a power chip sintering module, a power chip sintering module, and a carrier jig. The method includes lifting the limit line on the carrier jig, inserting the heat dissipation copper base block into the installation groove and loosening the limit line; performing OSP treatment on the heat dissipation copper base block; lifting the limit line and removing the heat dissipation copper base block from the installation groove; printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block; baking to form a first silver paste layer; mounting the power chip on the surface of the first silver paste layer; bonding the power chip to the first silver paste layer; printing a second silver paste on the gate and source of the power chip respectively; baking to form a second silver paste layer; mounting a covering copper sheet on each second silver paste layer; bonding the copper sheet to the second silver paste layer. The present application has the effect of reducing the difficulty of surface pretreatment of the heat dissipation copper base block and improving the reliability of the power chip sintering module.

Description

A method for manufacturing a power chip sintering module, a power chip sintering module, and a carrier plate Judge

Technical Field

The present application relates to the technical field of power chips, and in particular to a method for manufacturing a power chip sintering module, a power chip sintering module, and a carrier jig.

Background Art

At present, the main drive inverter substrate (also known as power chip) used in new energy vehicles adopts the sintering method of embedding the power chip into the groove on the top surface of the heat dissipation copper base inside the substrate. The power chip is first welded to the bottom of the groove of the heat dissipation copper base through the silver sintering process to make a power chip sintering module, and then the power chip sintering module is encapsulated inside the substrate as a whole. Among them, the sintered silver layer realizes the electrical connection between the drain of the power chip and the heat dissipation copper base, ensuring that the power chip can work normally. The heat dissipation copper base has good thermal conductivity of metal copper. When the power chip is working, it can accelerate the heat transfer and play a role in rapid heat dissipation, so as to prevent the heat accumulation of the power chip inside the package, and the junction temperature of the power chip sintering module is too high, which affects the reliability of the power chip sintering module and even the overall substrate. However, bare copper is very easy to oxidize in the air, resulting in a sharp decrease in the solderability of the heat dissipation copper base surface, which in turn leads to extremely poor bonding between the nano silver paste and the copper oxide surface during the sintering process. At high temperatures, the bonding interface is prone to cracking, causing the substrate to fail.

In the prior art, the industry generally uses low-cost horizontal production line surface treatment equipment. If a single heat dissipation copper base passes through the horizontal line for surface treatment, it will fall into the medicine tank during the process, making it difficult to perform surface pretreatment of the heat dissipation copper base before silver sintering.

With respect to the above-mentioned related technologies, the inventors have found that the existing power chip sintering modules have a problem of poor reliability due to the difficulty in pre-treating the surface of the heat dissipation copper base.

Summary of the invention

In order to improve the reliability of a power chip sintering module, the present application provides a method for manufacturing a power chip sintering module, a power chip sintering module, and a carrier jig.

In a first aspect, the present application provides a method for manufacturing a power chip sintering module.

This application is achieved through the following technical solutions:

A method for manufacturing a power chip sintering module comprises the following steps:

Before sintering, lift the ductile limit line on the mounting groove of the carrier jig, insert the heat dissipation copper base block into the mounting groove and loosen the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limit area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip;

Performing OSP treatment on the top surface of the heat dissipation copper base block on the carrier jig until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method;

Lift the limit line to move the heat dissipation copper base block out of the installation groove;

Printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

baking the first silver paste to form a first silver paste layer;

Mounting a power chip on the surface of the first silver paste layer;

High-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175° C.-350° C.;

Printing a second silver paste on the gate and source of the power chip respectively;

baking the second silver paste to form a second silver paste layer;

Mounting a copper sheet on each of the second silver paste layers, wherein the copper sheet covers the surface of the second silver paste layer;

High-temperature sintering is performed until the copper sheet is bonded to the second silver paste layer and the solvent in the second silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175° C.-350° C.

In a preferred example, the present application can be further configured as follows: when printing the second silver paste, the following steps are adopted:

Perform 1 pass of 3D steel screen printing at a pressure of 10 N and a speed of 20 mm/s.

In a preferred example, the present application can be further configured as follows: when baking the second silver paste, the following steps are adopted:

In a pure nitrogen environment, bake at 140°C for 20 minutes.

In a preferred example, the present application can be further configured as follows: after the copper sheet covers the surface of the second silver paste layer, during high-temperature sintering, the following steps are adopted:

The alloy was sintered at 250°C and 16 MPa for 300 seconds using a sintering machine.

In a second aspect, the present application provides a method for manufacturing a power chip sintering module.

This application is achieved through the following technical solutions:

A method for manufacturing a power chip sintering module comprises the following steps:

Before sintering, lift the ductile limit line on the mounting groove of the carrier jig, insert the heat dissipation copper base block into the mounting groove and loosen the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limit area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip;

Performing OSP treatment on the top surface of the heat dissipation copper base block on the carrier jig until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method;

Lift the limit line to move the heat dissipation copper base block out of the installation groove;

Printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

baking the first silver paste to form a first silver paste layer;

Mounting a power chip on the surface of the first silver paste layer;

High-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175° C.-350° C.;

Mounting silver films on the gate and source of the power chip respectively;

Mounting a copper sheet on each of the silver films, wherein the copper sheet covers the surface of the silver film;

High-temperature sintering is performed until the copper sheet is bonded to the silver film and the solvent in the silver film is completely volatilized, wherein the copper sheet covers the surface of the silver film, and the temperature range of high-temperature sintering is 175° C.-350° C.

In a preferred example, the present application can be further configured as follows: when mounting the silver film, the following steps are adopted:

Set the die bonding machine's die bonding temperature to 130°C-180°C, die bonding pressure to 20N, and die bonding speed to 20mm/s.

In a preferred example, the present application can be further configured as follows: after the copper sheet is covered on the surface of the silver film, during high temperature sintering, the following steps are adopted:

The alloy was sintered at 250°C and 16 MPa for 300 seconds using a sintering machine.

In a preferred example, the present application can be further configured as follows: when mounting the copper sheet, the following steps are adopted:

Set the chip temperature to 120℃, the chip pressure to 50N, and use the die bonding machine to mount for 1200ms.

In a third aspect, the present application provides a carrier jig.

This application is achieved through the following technical solutions:

A substrate jig, applied to any one of the above-mentioned methods for manufacturing a power chip sintering module, comprising a dielectric layer, wherein the dielectric layer is formed by laminating a plurality of prepregs and then laminating them at high temperature, wherein the temperature range of the high temperature laminating is 175°C-350°C;

The carrier jig is processed with a plurality of mounting grooves, the size of which is in the mm level and is larger than the size of the heat dissipation copper base block;

A limiting area is recessed in the center of the inner bottom of the installation groove;

The carrier jig is provided with a plurality of first through holes and a plurality of second through holes at the outer position of the mounting groove, wherein the plurality of first through holes are located in the direction of the bisector of the opposite sides of the mounting groove, and the plurality of second through holes are located in the direction of the diagonal line of the mounting groove, and the distance value between the first through hole and the groove edge of the mounting groove is equal to the vertical distance value between the second through hole and the groove edge of the adjacent mounting groove, and the distance value and the vertical distance value are both greater than 0;

A ductile limiting line is passed through the second through hole, and the limiting line is in an X shape and crosses just above the mounting groove, and the head and tail of the limiting line are fixed in the second through hole.

In a preferred example, the present application can be further configured as follows: the number of the second through holes is 4 and they are evenly distributed along the diagonal direction of the mounting groove.

In a preferred example, the present application can be further configured as follows: the number of the first through holes is 4 and they are evenly distributed along the direction of the bisector of the opposite sides of the mounting groove.

In a preferred example, the present application can be further configured as follows: the limiting area is in a cross shape.

In a preferred example, the present application can be further configured as follows: the end and tail of the limit line are respectively located in two of the second through holes in the same diagonal direction of the carrier jig, and the second through holes are filled with solidified epoxy resin for fixing the end and tail of the limit line.

In a fourth aspect, the present application provides a power chip sintering module.

This application is achieved through the following technical solutions:

A power chip sintering module is made by the above-mentioned power chip sintering module manufacturing method, comprising a heat dissipation copper base block, the heat dissipation copper base block has a length of 10-12 mm, a width of 10-12 mm, a thickness of 1.1-1.3 mm, and a groove is provided on the top surface of the heat dissipation copper base block, the length of the groove is 8-9 mm, the width of the groove is 6-7 mm, and the depth of the groove is 0.2-0.3 mm;

A first silver paste layer and a power chip are sequentially arranged in the center of the groove from bottom to top, the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm;

A second silver paste layer is printed on the gate and source of the power chip respectively, the second silver paste layer completely covers the gate and the source, the length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two source electrodes, the length of the source electrode is 6.1-6.3 mm, the width of the source electrode is 2.1-2.3 mm, and the thickness of the second silver paste layer is 0.02-0.04 mm;

The second silver paste layer is covered with a copper sheet, and the thickness of the copper sheet is 0.02-0.04 mm.

In a fifth aspect, the present application provides a power chip sintering module.

This application is achieved through the following technical solutions:

A power chip sintering module, made by the above-mentioned power chip sintering module manufacturing method, comprises a heat dissipation copper base block, the heat dissipation copper base block has a length of 10-12 mm, a width of 10-12 mm, a thickness of 1.1-1.3 mm, a top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9 mm, the width of the groove is 6-7 mm, and the depth of the groove is 0.2-0.3 mm;

A first silver paste layer and a power chip are sequentially arranged in the center of the groove from bottom to top, the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm;

Silver film layers are sintered on the gate and source of the power chip respectively, and the silver film layers completely cover the gate and the source. The length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two source electrodes, the length of the source electrode is 6.1-6.3 mm, the width of the source electrode is 2.1-2.3 mm, and the thickness of the silver film layer is 0.01-0.03 mm;

The silver film layers are all covered with copper sheets, and the thickness of the copper sheets is 0.02-0.04 mm.

In summary, compared with the prior art, the technical solution provided by this application has at least the following beneficial effects:

Before silver sintering, the heat dissipation copper base block is restricted in the groove with the help of a carrier metallurgy so that the heat dissipation copper base block can be surface treated. Even if it is impacted by the spraying solution, the heat dissipation copper base block will not fall into the solution tank during the movement, which greatly reduces the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, enhances the solderability of the heat dissipation copper base surface, and reduces the failure of the substrate caused by poor bonding with the sintered silver paste due to oxidation of the heat dissipation copper base block before sintering, thereby improving the reliability of the power chip sintering module; at the same time, considering that after the existing silver immersion surface pretreatment process is adopted, metallic silver will remain on the surface of the heat dissipation copper base and is difficult to remove, the present application adopts the OSP process to perform surface pretreatment of the heat dissipation copper base, and a layer of dense organic coating can be attached to the surface of the heat dissipation copper base block by chemical methods, so as to prevent the heat dissipation copper base from oxidizing before silver sintering and ensure the solderability of the heat dissipation copper base surface, and in the subsequent sintering process, the OSP organic coating will be melted under high temperature environment. The copper and silver paste are re-precipitated to further form a strong copper-silver eutectic layer to increase the bonding force, and the problem that the metal silver will remain on the surface of the heat dissipation copper base and is difficult to remove is solved; and the main drive inverter substrate PCB with embedded power chip needs to use the laser drilling process to form a φ200um copper column on the gate and source of the top surface of the power chip to conduct the power chip and the PCB network. In this process, the back gold layer on the top surface of the power chip is easily penetrated by the laser, resulting in damage to the chip circuit under the back gold layer and damage to the substrate. Therefore, silver paste is printed on the gate and source of the power chip respectively, or silver film is mounted respectively, and then sintered copper sheets are mounted to process laser blind holes on the copper sheets on the gate and source of the sintered power chip to form copper columns and PCB networks to achieve point signal connection, so as to enhance the strength of the back gold layer on the top surface of the power chip, reduce the occurrence of laser breakdown of the back gold layer on the top surface of the power chip, and enhance the reliability of the power chip sintering module.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a surface pretreatment process of a heat dissipation copper base block in a method for manufacturing a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 2 is a top view schematically showing a mounting groove, a first through hole, and a second through hole of a carrier jig used in a method for manufacturing a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 3 is an overall top view schematic diagram of a carrier jig used in a method for manufacturing a power chip sintering module provided in an exemplary embodiment of the present application.

FIG. 4 is a partial physical schematic diagram of a carrier jig used in a method for manufacturing a power chip sintering module provided in an exemplary embodiment of the present application.

FIG. 5 is a schematic diagram of surface pretreatment of a heat dissipation copper base block in a method for manufacturing a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 6 is a schematic diagram of a sintering process of a method for manufacturing a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 7 is a schematic diagram of a process for enhancing the strength of a back gold layer in a method for manufacturing a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 8 is a schematic structural diagram of a power chip sintering module provided by an exemplary embodiment of the present application.

FIG. 9 is a schematic diagram of a process for enhancing the strength of a back gold layer in a method for manufacturing a power chip sintering module provided by another exemplary embodiment of the present application.

FIG. 10 is a schematic structural diagram of a power chip sintering module provided by yet another exemplary embodiment of the present application.

DETAILED DESCRIPTION

This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make modifications to the present embodiment without any creative contribution as needed. However, as long as it is within the scope of the claims of the present application, it shall be protected by the patent law.

In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

In addition, the term "and/or" in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and/or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character "/" in this article, unless otherwise specified, generally means that the associated objects before and after are in an "or" relationship.

Research has found that existing surface treatment equipment, such as silver immersion lines and OSP processing lines, are all low-cost horizontal production lines. A single heat dissipation copper base block cannot be directly passed through the horizontal line for surface treatment. This is because the length and width dimensions of the heat dissipation copper base block are at the level of 11mm×11mm×1.2mm, and the horizontal line's row reel spacing and groove spacing are generally greater than 10mm. Therefore, if the heat dissipation copper base block directly passes through the horizontal line, it will fall into the medicine tank during the process.

The embodiments of the present application are further described in detail below in conjunction with the drawings in the specification.

1 , an embodiment of the present application provides a method for manufacturing a power chip sintering module, and the main steps of the method are described as follows.

S1: before sintering, lift the ductile limit line on the mounting groove of the carrier jig, insert the heat dissipation copper base block into the mounting groove and loosen the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limit area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip;

S2: performing OSP treatment on the top surface of the heat dissipation copper base block on the carrier jig until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method;

S3: lifting the limit line to move the heat dissipation copper base block out of the installation groove;

Specifically, the clean bare copper surface can be sintered with the nano silver paste to form a strong copper-silver eutectic layer. However, because bare copper is very easy to oxidize in the air, the solderability of the heat dissipation copper base surface drops sharply, which further leads to the extremely poor bonding between the sintered silver paste and the copper oxide surface after sintering, and it is easy to delaminate. Therefore, this solution performs surface pretreatment on the heat dissipation copper base block before silver sintering to prevent the heat dissipation copper base from oxidizing before sintering, resulting in poor bonding with the sintered silver paste.

Furthermore, because the industry generally adopts low-cost horizontal production line surface treatment equipment, if a single heat dissipation copper base passes through the horizontal line for surface treatment, it will fall into the medicine tank during the process, resulting in difficulty in surface pretreatment of the heat dissipation copper base before silver sintering. Therefore, in order to achieve surface pretreatment of the heat dissipation copper base block, the present application provides a carrier jig, including a dielectric layer, wherein the dielectric layer is formed by stacking a number of semi-cured sheets and then high-temperature pressing, and the temperature range during high-temperature pressing is 175°C-350°C.

Before forming, the raw material of the substrate jig is a double-sided copper-clad laminate, in which the thickness of the upper copper foil/lower copper foil is 12um, the dielectric layer is located between the upper copper foil layer and the lower copper foil layer, and the thickness of the dielectric layer is 2.0mm.

In this embodiment, the dielectric layer can be formed by stacking 11 EM-37B series prepregs and pressing them at a high temperature of 250° C. The glass fiber cloth model of the prepreg is 7628, and the weight percentage of the epoxy resin in the prepreg is 42±2%.

After the raw material is cut into small pieces, the surface copper is etched away through an acid etching line. Both the upper and lower copper foil layers are etched away, and only the middle dielectric layer is left in the formed carrier fixture. The length of the small motherboard material formed is 250mm, the width is 250mm, and the thickness is 2.0mm, which is the final length, width and total thickness of the carrier fixture.

Referring to Figure 2, the carrier jig is processed with a plurality of mounting grooves, the size of which is in mm level and is larger than the size of the heat dissipation copper base block. In this embodiment, 100 mounting grooves with 10 rows and 10 columns are arranged on the carrier jig. The mounting grooves are formed by deep processing of a CNC milling machine.

The length and width of the mounting groove are both greater than the length and width of the heat dissipation copper base block. For example, the length and width of the heat dissipation copper base block in this embodiment are 11 mm×11 mm, and the length and width of the mounting groove can be designed to be 13 mm×13 mm.

A limiting area is recessed at the center of the inner bottom of each installation groove.

In one embodiment, the limiting area is in a cross shape. The limiting area is a cross area with a width of 3.0 mm in the middle. The limiting area can be deep-milled to a residual thickness of 0.5 mm using a CNC milling machine. At this time, the effective depth of the mounting groove can be designed to be 1.5 mm. The thickness of the heat dissipation copper base block in this embodiment can be 1.2 mm, and the effective depth of the mounting groove is 0.3 mm more than the thickness of the heat dissipation copper base block.

A plurality of first through holes and a plurality of second through holes are drilled on the carrier jig at the outer position of the mounting groove, wherein the plurality of first through holes are located in the direction of the bisector of the opposite sides of the mounting groove, and the plurality of second through holes are located in the direction of the diagonal of the mounting groove, and the distance value between the first through hole and the groove edge of the mounting groove is equal to the vertical distance value between the second through hole and the groove edge of the adjacent mounting groove, and both the distance value and the vertical distance value are greater than 0.

In one embodiment, the number of the second through holes is 4 and they are evenly distributed along the diagonal direction of the mounting slot.

In one embodiment, the number of the first through holes is 4 and they are evenly distributed along the bisector direction of the opposite sides of the mounting groove.

In this embodiment, 8 through holes with a diameter of 2.0 mm can be drilled on the periphery of each mounting groove. The through holes include first through holes and second through holes. Among them, 4 first through holes are located on the bisectors of the opposite sides of the mounting groove, and the minimum distance between the hole edge and the groove edge can be 2.0 mm. The other 4 second through holes are located on the diagonal lines of the mounting groove, and the vertical distance from the hole edge to the two adjacent groove edges is also designed to be 2.0 mm.

3 , a ductile limiting line is provided in the second through hole, the limiting line is in an X shape and crosses just above the mounting groove, and the end and the end of the limiting line are fixed in the second through hole.

In this embodiment, the limit line is a polytetrafluoroethylene wire with a diameter of 0.18 mm, which passes through all the second through holes with a diameter of 2.0 mm located on the diagonal lines of each installation slot. The polytetrafluoroethylene wire crosses in an X shape and covers the position just above the installation slot.

In one embodiment, the end and tail of the limiting line are respectively located in two of the second through holes in the same diagonal direction of the carrier jig, and the second through holes are filled with cured epoxy resin for fixing the end and tail of the limiting line.

Specifically, the ends and tails of the polytetrafluoroethylene wire are located in the 2.0 mm second through holes at the upper left and lower right corners of the substrate fixture in the figure, respectively. The through holes are filled with plugging resin (epoxy resin), and then baked at 190°C to solidify the resin, completely fixing the ends and tails of the wire in the through holes. As shown in Figure 3, the second through holes filled with epoxy resin are represented by dark gray.

4 , a partial physical diagram of the carrier fixture is shown in the figure.

Through the cooperation of the above-mentioned carrier jig, the surface pretreatment of the heat dissipation copper base block through the horizontal line can be achieved. Also, considering that the metal silver will remain on the surface of the heat dissipation copper base after silver deposition and is difficult to remove, the epoxy resin used to encapsulate the power chip sintering module in the product has poor bonding with the metal silver layer, which will affect the overall reliability of the product. Therefore, this solution does not use the process of silver deposition on the surface of the heat dissipation copper base, but uses the OSP process. The OSP film is not resistant to acid, alkali and high temperature, and has the advantage of being easy to remove, and the heat dissipation copper base is subjected to OSP surface pretreatment through the horizontal production line.

Referring to FIG5 , before silver paste printing, the ductile limit line on the mounting groove of the carrier jig is lifted, the heat dissipation copper base block is inserted into the mounting groove and the limit line is released. The top surface of the heat dissipation copper base block on the carrier jig is treated with OSP until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method, so as to achieve OSP surface pretreatment of the heat dissipation copper base block across the horizontal line, and attach a dense organic coating to the surface of the heat dissipation copper base block.

Specifically, the X-shaped polytetrafluoroethylene wire on the mounting groove is gently lifted, and the heat dissipation copper base block is inserted into the mounting groove from one side;

The carrier jig carries the heat dissipation copper base block across the OSP horizontal line, and the OSP solution is sprayed onto the heat dissipation copper base block from the upper and lower directions of the carrier jig. Due to the restrictions of the cross-shaped limiting area at the bottom of the installation groove and the X-shaped cross-distributed limiting lines directly above the installation groove, the heat dissipation copper base block is subject to the impact force of the spraying solution, but the heat dissipation copper base block will not run out of the installation groove, nor will it fall into the solution tank during the movement, preventing the heat dissipation copper base block from falling out of the installation groove.

Finally, gently lift up the X-shaped polytetrafluoroethylene wire on the mounting groove and move the heat dissipation copper base block out from one side of the mounting groove to complete the surface pretreatment of the heat dissipation copper base block.

In this embodiment, the organic material of the organic coating is an imidazole organic crystalline base (Imidazoles), so that a dense layer of OSP film is attached to the surface of the heat dissipation copper base block. The OSP film is attached to the surface of the bare copper by a chemical method to prevent the heat dissipation copper base block from being oxidized before silver sintering, thereby ensuring the solderability of the surface of the heat dissipation copper base block. At the same time, the use of the carrier metallurgy of the present application to carry the heat dissipation copper base block for surface pretreatment not only reduces the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, enhances the solderability of the heat dissipation copper base surface, but also realizes the OSP treatment of the heat dissipation copper base block with a length and width size of 11mm, while the existing OSP treatment process can only realize the surface treatment of board-level products with a length and width of at least 100mm, and the treatment accuracy is greatly improved.

The heat dissipation copper base block can be treated with OSP through a horizontal production line. In the subsequent sintering process, the OSP organic coating will be melted, decomposed and volatilized in a high temperature environment, and the copper element will be re-precipitated to form a solid copper-silver eutectic layer with the silver paste. It has a strong bonding force and is also easy to remove.

6, S4: printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

S5: baking the first silver paste to form a first silver paste layer;

S6: mounting the power chip onto the surface of the first silver paste layer;

S7: high-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175° C.-350° C.

Specifically, the first silver paste is printed and processed to the bottom of the groove of the heat dissipation copper base block. The processing parameters can be set as: 3D steel screen printing, printing 1 time, pressure 10N, speed 20mm/s.

The first printed silver paste is pre-baked, and nitrogen is used to remove most of the solvent in the silver paste. The baking parameters can be set to a pure nitrogen environment, 140° C.×20 min.

Next, the power chip is transferred and mounted on the first silver paste by a die bonding machine. The temperature of the chip can be set to 120°C, the pressure of the chip can be set to 50N, and the die bonding machine is used for 1200ms. In this embodiment, the power chip can be a MOSFET chip.

Finally, high-temperature sintering is performed. After high-temperature sintering by a sintering machine, the power chip is completely bonded to the first silver paste, and the solvent in the first silver paste is completely evaporated. In this embodiment, the sintering is performed at a temperature of 250° C. and a pressure of 16 MPa for 300 seconds by a sintering machine.

The conventional back-gold layer on the top surface of the power chip in the industry is nickel/palladium/gold, and the back-gold layer is very thin (such as: 3.0um/0.2um/0.03um), and the main drive inverter PCB with embedded power chips needs to form φ200um copper pillars on the gate and source of the top surface of the chip to conduct the chip and PCB network, which is generally achieved by laser drilling. In this process, the back-gold layer on the top surface of the power chip is easily penetrated by the laser, which in turn damages the chip circuit under the back-gold layer, causing chip damage; at the same time, the nickel/palladium/gold surface has a very poor bonding strength with the epoxy resin on the existing power chip sintering module, and the bonding interface is prone to cracking at high temperatures, causing the substrate to fail.

In order to solve the problem that the nickel/palladium/gold back-gold layer on the top surface of the chip is easily broken down and damaged during the laser drilling process, thereby affecting the reliability, the embodiments of the present application also provide two new methods for manufacturing power chip sintering modules.

7, S811: printing a second silver paste on the gate and source of the power chip respectively;

S812: baking the second silver paste to form a second silver paste layer;

S813: mounting a copper sheet on each of the second silver paste layers, wherein the copper sheet covers the surface of the second silver paste layer;

S814: high-temperature sintering until the copper sheet is bonded to the second silver paste layer and the solvent in the second silver paste layer is completely evaporated, wherein the temperature range of the high-temperature sintering is 175°C-350°C.

In one embodiment, when printing the second silver paste, the following steps are adopted:

Perform 1 pass of 3D steel screen printing at a pressure of 10 N and a speed of 20 mm/s.

In one embodiment, when baking the second silver paste, the following steps are adopted:

In a pure nitrogen environment, bake at 140°C for 20 minutes.

In one embodiment, after the copper sheet is covered on the surface of the second silver paste layer, during high temperature sintering, the following steps are adopted:

The alloy was sintered at 250°C and 16 MPa for 300 seconds using a sintering machine.

In one embodiment, when mounting the copper sheet, the following steps are adopted:

Set the chip temperature to 120℃, the chip pressure to 50N, and use the die bonding machine to mount for 1200ms.

Specifically, print the silver paste for the second time and process the second silver paste onto the gate and source of the power chip. The parameters can be set to 3D steel screen printing, printing once, pressure 10N, speed 20mm/s.

Pre-bake the second silver paste, and use nitrogen pre-bake to remove most of the solvent in the second silver paste. The baking parameters can be set to a pure nitrogen environment, 140° C.×20 min.

The copper sheet is transferred and mounted on the second silver paste through a die bonding machine. The mounting temperature can be 120°C, the mounting pressure can be 50N, and the mounting time is 1200ms.

Finally, after high-temperature sintering in a sintering machine, the copper sheet and the second silver paste are completely bonded together, and the solvent in the second silver paste is completely evaporated. The environmental parameters can be set to 250°C temperature and 16Mpa pressure, high-temperature sintering for 300s, thereby completing the production process of the power chip sintering module sintered with double-layer silver paste. This can improve the problem that the back gold layer on the top surface of the power chip is easily penetrated by the laser and then damages the chip circuit under the back gold layer, causing chip damage; at the same time, the nickel/palladium/gold surface has a strong bonding strength with the epoxy resin on the power chip sintering module, and the overall reliability is better.

The embodiment of the present application also provides a power chip sintering module, which is made by any one of the power chip sintering module manufacturing methods in the above embodiments, and the power chip sintering module includes a heat dissipation copper base block, the heat dissipation copper base block has a length of 10-12 mm, a width of 10-12 mm, a thickness of 1.1-1.3 mm, and a groove is provided on the top surface of the heat dissipation copper base block, the length of the groove is 8-9 mm, the width of the groove is 6-7 mm, and the depth of the groove is 0.2-0.3 mm;

A first silver paste layer and a power chip are sequentially arranged in the center of the groove from bottom to top, the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm;

A second silver paste layer is printed on the gate and source of the power chip respectively, the second silver paste layer completely covers the gate and the source, the length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two source electrodes, the length of the source electrode is 6.1-6.3 mm, the width of the source electrode is 2.1-2.3 mm, and the thickness of the second silver paste layer is 0.02-0.04 mm;

The second silver paste layer is covered with a copper sheet, and the thickness of the copper sheet is 0.02-0.04 mm.

8 , specifically, the heat dissipation copper base block has a length × width of 11 × 11 mm and a thickness of 1.2 mm, and a rectangular groove with a length × width of 8.44 × 6.24 mm and a depth of 0.21 mm is designed on the top surface of the copper sheet.

Inside the groove from bottom to top are the first silver paste, MOSFET chip, second silver paste, and copper sheet.

The thickness of the first silver paste layer is 30 μm, and the silver paste screen printing area is 7.3×5.0 mm.

The length × width of the MOSFET chip is 6.94 × 4.74 mm, and the thickness is 0.1 mm. The gate, source, and drain are designed as 1 gate (Gate) size = 519x701µm, located on the top surface, and the back gold material is nickel/palladium/gold (3.0µm/0.2µm/0.03µm); 2 sources (Source) size = 6227x2226µm, located on the top surface, and the back gold material is nickel/palladium/gold (3.0µm/0.2µm/0.03µm); 1 drain (Drain) size = 5100x5100µm, located on the bottom surface, and the back gold material is titanium/nickel/silver (0.1µm/0.3µm/1µm).

The second silver paste layer is 30μm thick, with a total of 3 layers. One of the second silver paste layers is located on the gate of the power chip, with a length and width of 519x701µm, that is, the size is the same as the gate; the other two second silver paste layers are located on the two source electrodes of the power chip, with a length and width of 6227x2226µm, that is, the size is the same as the source electrode.

The copper sheet is 30μm thick and there are 3 sheets in total. One of the copper sheets is located on the gate of the power chip, with a length and width of 499x681µm, which is 10μm smaller than the single side of the gate. The other two copper sheets are located on the two source electrodes of the power chip, with a length and width of 6207x2206µm, which is 10μm smaller than the single side of the source electrode.

The above-mentioned power chip sintering module can realize processing of laser blind holes on the copper sheets on the sintered chip gate and source, and then form copper pillars to realize point signal connection with the PCB network.

The embodiment of the present application also provides a method for manufacturing a power chip sintering module, and the main steps of the method are described as follows.

Before sintering, lift the ductile limit line on the mounting groove of the carrier jig, insert the heat dissipation copper base block into the mounting groove and loosen the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, the inner bottom of the mounting groove is provided with a limit area for limiting the heat dissipation copper base block, and the top surface of the heat dissipation copper base block is provided with a groove for accommodating a power chip;

Performing OSP treatment on the top surface of the heat dissipation copper base block on the carrier jig until a layer of organic coating is attached to the top surface of the heat dissipation copper base block by a chemical method;

Lift the limit line to move the heat dissipation copper base block out of the installation groove;

Printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

baking the first silver paste to form a first silver paste layer;

Mounting a power chip on the surface of the first silver paste layer;

High-temperature sintering until the power chip is bonded to the first silver paste layer and the solvent in the first silver paste layer is completely volatilized, wherein the temperature range of the high-temperature sintering is 175° C.-350° C.;

9, S821: mounting silver films on the gate and source of the power chip respectively;

S822: mounting a copper sheet on each of the silver films, wherein the copper sheet covers the surface of the silver film;

S823: high-temperature sintering until the copper sheet is bonded to the silver film and the solvent in the silver film is completely evaporated, wherein the copper sheet covers the surface of the silver film, and the temperature range of high-temperature sintering is 175°C-350°C.

In one embodiment, when mounting the silver film, the following steps are adopted:

Set the die bonding machine's die bonding temperature to 130°C-180°C, die bonding pressure to 20N, and die bonding speed to 20mm/s.

In one embodiment, after the copper sheet is covered on the surface of the silver film, the following steps are adopted during high temperature sintering:

The alloy was sintered at 250°C and 16 MPa for 300 seconds using a sintering machine.

In one embodiment, when mounting the copper sheet, the following steps are adopted:

Set the chip temperature to 120℃, the chip pressure to 50N, and use the die bonding machine to mount for 1200ms.

Specifically, after the top surface OSP treatment of the heat dissipation copper base block is completed, the processing flow of the power chip sintering module of the silver paste sintered chip + silver film sintered copper sheet is as follows:

1. Print the first silver paste and process the first silver paste to the bottom of the groove of the heat dissipation copper base block. Processing parameters (3D steel screen printing, 1 printing, pressure 10N, speed 20mm/s);

2. Pre-bake the first silver paste, and pre-bake with nitrogen to remove most of the solvent in the silver paste (pure nitrogen environment, 140℃×20min);

3. Transfer the chip, and mount the chip on the first silver paste through a die bonding machine (chip temperature 120°C, chip pressure 50N, 1200ms);

4. High temperature sintering: After high temperature sintering by the sintering machine, the chip and the first silver paste are completely bonded together, and the solvent in the first silver paste is completely evaporated (250℃×16Mpa×300s);

5. Transfer the silver film, use a die bonding machine to absorb the silver film and then transfer it to the gate and source of the chip (130°C, pressure 20N, speed 20mm/s);

6. Transfer the copper sheet, and mount it on the silver film through a die bonding machine (chip temperature 120℃, chip pressure 50N, 1200ms);

8. High temperature sintering: After high temperature sintering in a sintering machine, the copper sheet and the silver film are completely bonded together, and the solvent in the silver film is completely evaporated (250℃×16Mpa×300s).

It should be understood that the size of the serial numbers of the steps in the above embodiments does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

The embodiment of the present application also provides a power chip sintering module, which is made by any one of the power chip sintering module manufacturing methods in the above embodiments, including a heat dissipation copper base block, the heat dissipation copper base block has a length of 10-12mm, the heat dissipation copper base block has a width of 10-12mm, the heat dissipation copper base block has a thickness of 1.1-1.3mm, and the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm;

A first silver paste layer and a power chip are sequentially arranged in the center of the groove from bottom to top, the length of the first silver paste layer is 7.0-7.5 mm, the width of the first silver paste layer is 5.0-5.5 mm, the thickness of the first silver paste layer is 0.02-0.04 mm, the length of the power chip is 6.90-6.95 mm, the width of the power chip is 4.70-4.75 mm, and the thickness of the power chip is 0.1-0.2 mm;

Silver film layers are sintered on the gate and source of the power chip respectively, and the silver film layers completely cover the gate and the source. The length of the gate is 0.5-0.6 mm, the width of the gate is 0.7-0.8 mm, there are two source electrodes, the length of the source electrode is 6.1-6.3 mm, the width of the source electrode is 2.1-2.3 mm, and the thickness of the silver film layer is 0.01-0.03 mm;

The silver film layers are all covered with copper sheets, and the thickness of the copper sheets is 0.02-0.04 mm.

10 , specifically, the heat dissipation copper base block has a length × width of 11 × 11 mm and a thickness of 1.2 mm, and a rectangular groove with a length × width of 8.44 × 6.24 mm and a depth of 0.2 mm is designed on the top surface of the heat dissipation copper base block.

Inside the groove from bottom to top are the first silver paste, MOSFET chip, silver film and copper sheet.

The thickness of the first silver paste layer is 30 μm, and the silver paste screen printing area is 7.3×5.0 mm.

The length × width of the MOSFET chip is 6.94 × 4.74 mm, and the thickness is 0.1 mm. The gate, source, and drain are designed as follows: Gate size = 519x701µm, 1 piece, located on the top surface, and the back gold material is nickel/palladium/gold (3.0µm/0.2µm/0.03µm); Source size = 6227x2226µm, 2 pieces, located on the top surface, and the back gold material is nickel/palladium/gold (3.0µm/0.2µm/0.03µm); Drain size = 5100x5100µm, 1 piece, located on the bottom surface, and the back gold material is titanium/nickel/silver (0.1µm/0.3µm/1µm).

The thickness of the silver film layer before sintering is 65um; the thickness after sintering is 20μm, with a total of 3 silver film layers, one of which is located on the gate of the chip, with a length × width of 519x701µm, that is, the size is the same as the gate; the other two silver film layers are located on the two source electrodes, with a length × width of 6227x2226µm, that is, the size is the same as the source electrode. The sintering silver film method has a better coverage density for the gate and source of the power chip, and the thickness of the silver film layer is smaller than that of the first silver paste layer, which is more conducive to the integrated design of the chip.

The thickness of the copper sheet is 30μm, and there are 3 pieces in total. One copper sheet is located on the gate of the chip, with a length and width of 499x681µm, which is 10μm smaller than the single side of the gate; the other two copper sheets are located on the two source electrodes, with a length and width of 6207x2206µm, which is 10μm smaller than the single side of the source electrode.

The above-mentioned power chip sintering module can realize processing of laser blind holes on the copper sheets on the sintered chip gate and source, and then form copper pillars to realize point signal connection with the PCB network.

Furthermore, the new power chip sintering module in the present application is embedded in the substrate, and the power chip sintering module is encapsulated as a whole in the substrate.

The power chip is located in the groove on the top surface of the heat dissipation copper base block. The gate and source on the top surface of the power chip are interconnected with the PCB network through the L2 layer of the PCB - the φ200um copper pillar on the power chip. The drain on the bottom surface of the power chip is welded to the copper base through the sintered silver layer, and then the electrical signal and heat conduction between the chip drain and the PCB is realized through the L5 layer of the PCB - the φ200um copper pillar on the back of the heat dissipation copper base; the copper base, as a good conductor of heat, plays a role in accelerating heat dissipation, and the sintered silver layer realizes the electrical performance connection and rapid heat conduction between the chip drain and the heat dissipation copper base, and then through the path of "power chip → sintered silver layer → heat dissipation copper base → L4/5 layer dense blind holes → L5 layer copper → L5/6 layer dense blind holes → L6 layer copper", the heat is accelerated to the water-cooled radiator on the L6 layer copper, so as to achieve the purpose of improving the large accumulation of heat in the power chip inside the package, the excessively high junction temperature of the product, and the impact on the overall reliability of the product.

The embodiment of the present application also provides a new surface treatment solution for the power chip sintering module before packaging, that is, the sintered power chip sintering module is manually placed in the cavity of the OSP carrier jig, and passes through the horizontal browning line. The X-shaped polytetrafluoroethylene line on the cavity prevents the power chip sintering module from falling out of the cavity due to the impact of the potion when passing through the horizontal browning line; because the OSP film on the surface of the heat dissipation copper base block itself is not resistant to acid and alkali, when passing through the browning line, multiple potion cylinders in the browning line contain sulfuric acid components, and sulfuric acid can directly wash off the OSP film. While washing off the OSP film on the surface of the heat dissipation copper base block, a layer of polar metal copper organic complex is formed on the surface of the heat dissipation copper base block and the copper sheet. The metal copper organic complex is produced by a chemical reaction between the browning potion and the bare copper surface. The thickness is at the molecular level and can be almost ignored. The coverage area is 100% of the coverage area of the heat dissipation copper base and the bare copper surface on the chip, which solves the problem of poor bonding between the OSP film and the epoxy resin, thereby reducing the overall reliability of the substrate product, and greatly improves the surface roughness of the copper sheet.

After encapsulation, the polar brown copper surface is combined with the polar resin, which significantly improves the interface bonding strength and ensures product reliability.

In summary, a method for manufacturing a power chip sintering module is to restrict the heat dissipation copper base block in a groove by means of a carrier jig before silver sintering, so as to perform surface treatment on the heat dissipation copper base block. Even if the heat dissipation copper base block is impacted by the spraying solution, it will not fall into the solution tank during the movement, which greatly reduces the difficulty of surface pretreatment of the heat dissipation copper base block before silver sintering, enhances the solderability of the heat dissipation copper base surface, and reduces the failure of the substrate caused by poor bonding with the sintering silver paste due to oxidation of the heat dissipation copper base block before sintering, thereby improving the reliability of the power chip sintering module; at the same time, considering that after the existing silver immersion surface pretreatment process is adopted, metallic silver will remain on the surface of the heat dissipation copper base and is difficult to remove, the present application adopts the OSP process to perform surface pretreatment of the heat dissipation copper base, and a layer of dense organic coating can be attached to the surface of the heat dissipation copper base block by a chemical method, so as to prevent the heat dissipation copper base from oxidizing before silver sintering and ensure the solderability of the heat dissipation copper base surface, and in the subsequent sintering process, the OSP organic coating The layer will be melted, decomposed and volatilized in a high temperature environment, and copper and silver paste will be re-precipitated to further form a strong copper-silver eutectic layer to increase the bonding force, and also solve the problem that the metal silver will remain on the surface of the heat dissipation copper base and is difficult to remove; and the main drive inverter substrate PCB with embedded power chips needs to use the laser drilling process to form a φ200um copper column on the gate and source of the top surface of the power chip to conduct the power chip and the PCB network. In this process, the back gold layer on the top surface of the power chip is easily penetrated by the laser, resulting in damage to the chip circuit under the back gold layer and damage to the substrate. Therefore, silver paste is printed on the gate and source of the power chip respectively, or silver film is mounted respectively, and then sintered copper sheets are mounted to process laser blind holes on the copper sheets on the gate and source of the sintered power chip to form copper columns and PCB networks to achieve point signal connection, so as to enhance the strength of the back gold layer on the top surface of the power chip, reduce the occurrence of laser breakdown of the back gold layer on the top surface of the power chip, and enhance the reliability of the power chip sintering module.

A method for manufacturing a power chip sintering module includes performing an OSP treatment process before sintering the heat dissipating copper-based silver, forming a dense organic coating on the surface of the copper-based surface to prevent the copper-based surface from being oxidized before the silver-based sintering, and ensuring the solderability of the copper-based surface.

The design of the carrier fixture limits the movement range of each heat dissipation copper base block within the installation groove, which can effectively prevent the copper base from escaping into the medicine tank due to the impact of the spraying solution, and realize the operability of OSP treatment of the heat dissipation copper base with a length × width size of millimeters across the horizontal line.

The mainboard of the carrier fixture is made of glass fiber cloth, epoxy resin and polytetrafluoroethylene wire, all of which are materials resistant to strong acids and alkalis. They can pass the OSP level line an unlimited number of times without being corroded. Therefore, they can be recycled an unlimited number of times, which is energy-saving and environmentally friendly and reduces production costs.

The substrate for embedding the new power sintered module has a φ200μm blind hole punched on a 30μm thick copper sheet instead of the nickel/palladium/gold (3.0µm/0.2µm/0.03µm) back gold layer of the traditional power chip. This can effectively prevent the chip circuit under the back gold layer from being broken down and damaged, and also avoid the direct contact between the nickel/palladium/gold (3.0µm/0.2µm/0.03µm) back gold layer on the top surface of the power chip and the epoxy resin of the substrate, resulting in poor bonding, thereby improving product reliability.

The power chip sintering module uses an OSP fixture to pass through a horizontal browning line to remove the OSP film on the copper-based surface, brown the module surface, and improve the reliability of the substrate.

Those skilled in the art will clearly understand that for the sake of convenience and brevity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In actual applications, the above-mentioned functions can be distributed and completed by different functional units and modules as needed, that is, the internal structure of the system can be divided into different functional units or modules to complete all or part of the functions described above.

Claims (15)

1. A method for manufacturing a power chip sintering module is characterized by comprising the following steps,

Before sintering, picking up a ductile limit line on a mounting groove of a carrier plate jig, inserting a heat dissipation copper base block into the mounting groove and loosening the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, a limit area for limiting the heat dissipation copper base block is arranged at the inner bottom of the mounting groove, and a groove for accommodating a power chip is formed in the top surface of the heat dissipation copper base block;

OSP treatment is carried out on the top surface of the heat dissipation copper base block on the carrier plate jig until the top surface of the heat dissipation copper base block is attached with an organic coating through a chemical method;

Picking up the limit line and moving the radiating copper base block out of the mounting groove;

printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

baking the first silver paste to form a first silver paste layer;

attaching a power chip to the surface of the first silver paste layer;

Sintering at a high temperature until the power chip is adhered to the first silver paste layer, and the solvent in the first silver paste layer is thoroughly volatilized, wherein the temperature range during high-temperature sintering is 175-350 ℃;

printing second silver paste on the grid electrode and the source electrode of the power chip respectively;

baking the second silver paste to form a second silver paste layer;

attaching copper sheets to each second silver paste layer, wherein the copper sheets cover the surfaces of the second silver paste layers;

and sintering at high temperature until the copper sheet is adhered to the second silver paste layer, and thoroughly volatilizing the solvent in the second silver paste layer, wherein the temperature range during high-temperature sintering is 175-350 ℃.

2. The method of manufacturing a power chip sintering module according to claim 1, wherein the second silver paste is printed by using the following steps,

1 Time 3D steel screen printing was performed at a pressure of 10N and a speed of 20 mm/s.

3. The method of manufacturing a power chip sintering module according to claim 1, wherein the second silver paste is baked by the following steps,

Baking at 140 deg.C for 20min under pure nitrogen.

4. The method for manufacturing a power chip sintering module according to claim 1, wherein after the copper sheet is covered on the surface of the second silver paste layer, the following steps are adopted during high-temperature sintering,

Sintering at 250 deg.c and 16MPa for 300s.

5. A method for manufacturing a power chip sintering module is characterized by comprising the following steps,

Before sintering, picking up a ductile limit line on a mounting groove of a carrier plate jig, inserting a heat dissipation copper base block into the mounting groove and loosening the limit line, wherein the limit line is arranged along the diagonal direction of the top surface of the heat dissipation copper base block, a limit area for limiting the heat dissipation copper base block is arranged at the inner bottom of the mounting groove, and a groove for accommodating a power chip is formed in the top surface of the heat dissipation copper base block;

OSP treatment is carried out on the top surface of the heat dissipation copper base block on the carrier plate jig until the top surface of the heat dissipation copper base block is attached with an organic coating through a chemical method;

Picking up the limit line and moving the radiating copper base block out of the mounting groove;

printing a first silver paste at the bottom of the groove on the top surface of the heat dissipation copper base block;

baking the first silver paste to form a first silver paste layer;

attaching a power chip to the surface of the first silver paste layer;

Sintering at a high temperature until the power chip is adhered to the first silver paste layer, and the solvent in the first silver paste layer is thoroughly volatilized, wherein the temperature range during high-temperature sintering is 175-350 ℃;

silver films are respectively attached to the grid electrode and the source electrode of the power chip;

attaching copper sheets to each silver film, wherein the copper sheets cover the surfaces of the silver films;

and sintering at a high temperature until the copper sheet is adhered to the silver film, and the solvent in the silver film is thoroughly volatilized, wherein the copper sheet covers the surface of the silver film, and the temperature range during sintering at the high temperature is 175-350 ℃.

6. The method for manufacturing a power chip sintering module according to claim 5, wherein the silver film is attached by the following steps,

The chip bonding temperature of the die bonder is set to be 130-180 ℃, the chip bonding pressure is 20N, and the chip bonding speed is 20mm/s.

7. The method of manufacturing a power chip sintering module according to claim 5, wherein after the copper sheet is covered on the surface of the silver film, the following steps are adopted during high-temperature sintering,

Sintering at 250 deg.c and 16MPa for 300s.

8. The method for manufacturing a power chip sintering module according to claim 1 or 5, wherein the copper sheet is attached by the following steps,

Setting the temperature of the patch at 120 ℃ and the pressure of the patch at 50N, and mounting for 1200ms through a die bonder.

9. The carrier plate fixture is characterized by comprising a medium layer, wherein the medium layer is formed by laminating a plurality of prepregs and then high-temperature lamination, and the temperature range during the high-temperature lamination is 175-350 ℃;

a plurality of mounting grooves are formed in the carrier plate jig, and the size of each mounting groove is in the mm level and is larger than that of the heat dissipation copper base block;

a limiting area is concavely arranged in the middle position of the inner bottom of the mounting groove;

A plurality of first through holes and a plurality of second through holes are drilled in the peripheral position of the mounting groove on the carrier plate jig, the first through holes are positioned in the opposite side bisector direction of the mounting groove, the second through holes are positioned in the diagonal direction of the mounting groove, the distance value between the first through holes and the groove edge of the mounting groove is equal to the vertical distance value between the second through holes and the groove edge of the adjacent mounting groove, and the distance value and the vertical distance value are both larger than 0;

And a limiting wire with ductility is arranged in the second through hole in a penetrating way, the limiting wire is crossed in an X shape and is right above the mounting groove, and the wire head and the wire tail of the limiting wire are fixed in the second through hole.

10. The carrier fixture of claim 9, wherein the number of second through holes is 4 and is uniformly distributed along a diagonal direction of the mounting groove.

11. The carrier fixture of claim 9, wherein the number of first through holes is 4 and is uniformly distributed along the opposite side bisector direction of the mounting groove.

12. The carrier tool of claim 9, wherein the limit area is cross-shaped.

13. The carrier tool of claim 9, wherein the wire ends and wire tails of the limit wire are respectively located in two second through holes in the same diagonal direction of the carrier tool, and the second through holes are filled with cured epoxy resin for fixing the wire ends and wire tails of the limit wire.

14. The power chip sintering module is characterized by being manufactured by adopting the manufacturing method of the power chip sintering module in claim 1, and comprising a heat dissipation copper base block, wherein the length of the heat dissipation copper base block is 10-12mm, the width of the heat dissipation copper base block is 10-12mm, the thickness of the heat dissipation copper base block is 1.1-1.3mm, the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm;

The middle position in the groove is sequentially provided with a first silver paste layer and a power chip from bottom to top, the length of the first silver paste layer is 7.0-7.5mm, the width of the first silver paste layer is 5.0-5.5mm, the thickness of the first silver paste layer is 0.02-0.04mm, the length of the power chip is 6.90-6.95mm, the width of the power chip is 4.70-4.75mm, and the thickness of the power chip is 0.1-0.2mm;

The grid electrode and the source electrode of the power chip are respectively printed with a second silver paste layer, the second silver paste layer completely covers the electrode and the source electrode, the length of the grid electrode is 0.5-0.6mm, the width of the grid electrode is 0.7-0.8mm, the number of the source electrodes is two, the length of the source electrode is 6.1-6.3mm, the width of the source electrode is 2.1-2.3mm, and the thickness of the second silver paste layer is 0.02-0.04mm;

The second silver paste layers are covered with copper sheets, and the thickness of each copper sheet is 0.02-0.04mm.

15. The power chip sintering module is characterized by being manufactured by adopting the manufacturing method of the power chip sintering module according to claim 5, and comprising a heat dissipation copper base block, wherein the length of the heat dissipation copper base block is 10-12mm, the width of the heat dissipation copper base block is 10-12mm, the thickness of the heat dissipation copper base block is 1.1-1.3mm, the top surface of the heat dissipation copper base block is provided with a groove, the length of the groove is 8-9mm, the width of the groove is 6-7mm, and the depth of the groove is 0.2-0.3mm;

The middle position in the groove is sequentially provided with a first silver paste layer and a power chip from bottom to top, the length of the first silver paste layer is 7.0-7.5mm, the width of the first silver paste layer is 5.0-5.5mm, the thickness of the first silver paste layer is 0.02-0.04mm, the length of the power chip is 6.90-6.95mm, the width of the power chip is 4.70-4.75mm, and the thickness of the power chip is 0.1-0.2mm;

The grid electrode and the source electrode of the power chip are respectively sintered with a silver film layer, the silver film layer completely covers the electrode and the source electrode, the length of the grid electrode is 0.5-0.6mm, the width of the grid electrode is 0.7-0.8mm, the number of the source electrodes is two, the length of the source electrode is 6.1-6.3mm, the width of the source electrode is 2.1-2.3mm, and the thickness of the silver film layer is 0.01-0.03mm;

copper sheets are covered on the silver film layers, and the thickness of each copper sheet is 0.02-0.04mm.