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CN118655948A - Fast dynamic bias circuit based on capacitive coupling - Google Patents

Fast dynamic bias circuit based on capacitive coupling Download PDF

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Publication number
CN118655948A
CN118655948A CN202411142033.XA CN202411142033A CN118655948A CN 118655948 A CN118655948 A CN 118655948A CN 202411142033 A CN202411142033 A CN 202411142033A CN 118655948 A CN118655948 A CN 118655948A
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mos tube
tube
mos
electrode
bias
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CN118655948B (en
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王艺谋
袁胜丽
李福乐
池保勇
张跃
周科吉
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Chengdu Jiujin Technology Co ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/561Voltage to current converters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)

Abstract

The invention relates to the field of bias circuits, in particular to a fast dynamic bias circuit based on capacitive coupling. The scheme comprises a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube and a coupling capacitor, wherein the drain electrode of the first MOS tube is connected with a grid electrode, externally applied bias current is loaded on the drain electrode of the first MOS tube, the source electrode of the first MOS tube is grounded, the grid electrode of the first MOS tube is connected with the source electrode of the fifth MOS tube, the grid electrode of the first MOS tube is grounded through the decoupling capacitor, the grid electrode of the fifth MOS tube is connected with the grid electrode of the second MOS tube through the coupling capacitor, the drain electrode of the fifth MOS tube is connected with the grid electrode of the second MOS tube, an external clock is loaded on the grid electrode of the fifth MOS tube and the coupling capacitor controls the switch of the fifth MOS tube, the source electrode of the second MOS tube is grounded, and the drain electrode of the second MOS tube is connected with an amplifier differential input pair tube formed by the third MOS tube and the fourth MOS tube.

Description

基于电容耦合的快速动态偏置电路Fast dynamic bias circuit based on capacitive coupling

技术领域Technical Field

本发明涉及偏置电路领域,具体涉及一种基于电容耦合的快速动态偏置电路。The invention relates to the field of bias circuits, and in particular to a fast dynamic bias circuit based on capacitive coupling.

背景技术Background Art

在一些由两相时钟控制的电路中,如开关电容电路,电路通常在其中一个时钟相位内保持,另一个时钟相位内工作。典型的开关电容电路包括流水线模数转换器中的级电路。模数转换器中的级电路包括比较器,放大器等模块,其中比较器和放大器都是周期工作的,其中一个相位为保持相位,另一个相位对信号进行处理,即放大相位。在保持相位,电路不工作,为了实现低功耗,可以考虑使用动态偏置的技术将电路周期性的开启和关闭,在工作的时候开启,在保持相位的时候关闭以节省功耗。动态偏置技术通常需要考虑电路从关闭到开启的恢复速度以及对电路进行动态偏置本身需要付出的代价。In some circuits controlled by two-phase clocks, such as switched capacitor circuits, the circuit is usually held in one of the clock phases and works in the other clock phase. Typical switched capacitor circuits include stage circuits in pipeline analog-to-digital converters. The stage circuits in the analog-to-digital converter include modules such as comparators and amplifiers, where both the comparator and the amplifier work periodically, one of the phases is the holding phase, and the other phase processes the signal, i.e., the amplification phase. In the holding phase, the circuit does not work. In order to achieve low power consumption, it is possible to consider using dynamic biasing technology to periodically turn the circuit on and off, turning it on when working and turning it off when holding the phase to save power consumption. Dynamic biasing technology usually needs to consider the recovery speed of the circuit from off to on and the cost of dynamically biasing the circuit itself.

现有动态偏置电路,如CN106249794A公开的一种动态偏置LDO电路,采用电容耦合采样输出电压瞬态变化,通过与固定偏置电压进行比较,产生两个动态偏置信号,动态偏置信号根据输出电压的变化情况来打开或关闭对功率管栅端寄生电容的充放电环路,进而调节功率管栅端电压,稳定输出电压。Existing dynamic bias circuits, such as a dynamic bias LDO circuit disclosed in CN106249794A, use capacitor coupling to sample the transient change of the output voltage, and generate two dynamic bias signals by comparing with the fixed bias voltage. The dynamic bias signal opens or closes the charging and discharging loop of the parasitic capacitance at the gate end of the power tube according to the change of the output voltage, thereby adjusting the gate end voltage of the power tube and stabilizing the output voltage.

该方案产生固定偏置电压Vb1和Vb2的电路包括参考电压Vref,放大器OP1,晶体管M1~M4,电阻Rs,动态偏置电路包括:电阻R1、R2,电容C1、C2,放大器OP2、OP3,用于产生动态偏置和固定偏置的叠加信号Vb3和Vb4;Vb3控制晶体管M6、M7的栅压,Vb4控制晶体管M5和M8的栅压。但其结构复杂,动态偏置调整时,分别需要控制晶体管M6、M7的导电能力或控制晶体管M5和M8的导电能力。晶体管导通时会有导通电压,会占用一定的电压裕度,降低放大器的整体动态范围。The circuit for generating fixed bias voltages Vb1 and Vb2 in this scheme includes a reference voltage Vref, an amplifier OP1, transistors M1 to M4, and a resistor Rs. The dynamic bias circuit includes resistors R1 and R2, capacitors C1 and C2, and amplifiers OP2 and OP3, which are used to generate superimposed signals Vb3 and Vb4 of dynamic bias and fixed bias; Vb3 controls the gate voltage of transistors M6 and M7, and Vb4 controls the gate voltage of transistors M5 and M8. However, its structure is complex. When the dynamic bias is adjusted, it is necessary to control the conductivity of transistors M6 and M7 or the conductivity of transistors M5 and M8 respectively. When the transistor is turned on, there will be a turn-on voltage, which will occupy a certain voltage margin and reduce the overall dynamic range of the amplifier.

发明内容Summary of the invention

本发明的目的在于克服现有技术的缺点,提供一种基于电容耦合的快速动态偏置电路,本发明结构简单,无需在偏置管下方串联开关MOS管,消除了开关管导通所带来的电压损失,扩大了运放的动态范围。The purpose of the present invention is to overcome the shortcomings of the prior art and provide a fast dynamic bias circuit based on capacitor coupling. The present invention has a simple structure and does not require a switch MOS tube to be connected in series under the bias tube, thereby eliminating the voltage loss caused by the conduction of the switch tube and expanding the dynamic range of the operational amplifier.

本发明采取如下技术方案实现上述目的,本发明提供一种基于电容耦合的快速动态偏置电路,包括第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4、第五MOS管Msw、解耦电容Cd以及耦合电容Cc,第一MOS管M1的漏极与栅极连接,外加偏置电流IB加载到第一MOS管M1的漏极上,第一MOS管M1的源极接地VSS,第一MOS管M1的栅极与第五MOS管Msw的源极连接,第一MOS管M1的栅极还通过解耦电容Cd接地VSS,第五MOS管Msw的栅极通过耦合电容Cc与第二MOS管M2的栅极连接,第五MOS管Msw的漏极与第二MOS管M2的栅极连接,外部时钟ck加载到第五MOS管Msw的栅极以及耦合电容Cc,控制第五MOS管Msw的开关,第二MOS管M2的源极接地VSS,第二MOS管M2的漏极与第三MOS管M3及第四MOS管M4构成的放大器的差分输入对管连接;解耦电容Cd抑制偏置电压的抖动。The present invention adopts the following technical scheme to achieve the above-mentioned purpose. The present invention provides a fast dynamic bias circuit based on capacitor coupling, including a first MOS tube M1, a second MOS tube M2, a third MOS tube M3, a fourth MOS tube M4, a fifth MOS tube Msw, a decoupling capacitor Cd and a coupling capacitor Cc. The drain of the first MOS tube M1 is connected to the gate, an external bias current IB is loaded on the drain of the first MOS tube M1, the source of the first MOS tube M1 is grounded to VSS, the gate of the first MOS tube M1 is connected to the source of the fifth MOS tube Msw, and the gate of the first MOS tube M1 is connected to the gate of the fifth MOS tube Msw. The decoupling capacitor Cd is also connected to the ground VSS, the gate of the fifth MOS tube Msw is connected to the gate of the second MOS tube M2 through the coupling capacitor Cc, the drain of the fifth MOS tube Msw is connected to the gate of the second MOS tube M2, the external clock ck is loaded to the gate of the fifth MOS tube Msw and the coupling capacitor Cc to control the switch of the fifth MOS tube Msw, the source of the second MOS tube M2 is connected to the ground VSS, the drain of the second MOS tube M2 is connected to the differential input pair of the amplifier composed of the third MOS tube M3 and the fourth MOS tube M4; the decoupling capacitor Cd suppresses the jitter of the bias voltage.

当外部时钟ck为高电平,第五MOS管Msw导通,第二MOS管M2的栅极电压Vg等于偏置电压VB,则第二MOS管M2产生偏置电流,给放大器的差分输入对管提供工作所需偏置;When the external clock ck is at a high level, the fifth MOS tube Msw is turned on, and the gate voltage Vg of the second MOS tube M2 is equal to the bias voltage VB, then the second MOS tube M2 generates a bias current to provide the differential input pair of the amplifier with the required bias for operation;

当外部时钟ck从高电平变为低电平时,第五MOS管Msw关断,第二MOS管M2的栅极电压Vg与偏置电压VB断开连接,外部时钟ck通过耦合电容Cc将第二MOS管M2的栅极电压Vg拉低,拉低的幅度取决于耦合电容Cc和第二MOS管M2栅极电容的比例,则第二MOS管M2的偏置电流关断。When the external clock ck changes from a high level to a low level, the fifth MOS transistor Msw is turned off, the gate voltage Vg of the second MOS transistor M2 is disconnected from the bias voltage VB, and the external clock ck pulls down the gate voltage Vg of the second MOS transistor M2 through the coupling capacitor Cc. The magnitude of the pull-down depends on the ratio of the coupling capacitor Cc to the gate capacitance of the second MOS transistor M2, and the bias current of the second MOS transistor M2 is turned off.

本发明的有益效果为:The beneficial effects of the present invention are:

本发明无需在偏置管M2下面串联开关MOS管,因此也消除了开关管导通电压所带来的电压损失,扩大了运放的动态范围。同时,本发明第五MOS管Msw可以设计得非常小,降低了ck的负载,降低了开关打开和关断所带来的冲击。The present invention does not need to connect a switch MOS tube in series under the bias tube M2, thereby eliminating the voltage loss caused by the switch tube conduction voltage and expanding the dynamic range of the operational amplifier. At the same time, the fifth MOS tube Msw of the present invention can be designed to be very small, reducing the load of ck and reducing the impact caused by the switch opening and closing.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1是本发明实施例提供的一种基于电容耦合的快速动态偏置电路结构图。FIG1 is a structural diagram of a fast dynamic bias circuit based on capacitive coupling provided by an embodiment of the present invention.

具体实施方式DETAILED DESCRIPTION

为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。To make the purpose, technical solution and advantages of the embodiments of the present invention more clear, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention.

本发明提供一种基于电容耦合的快速动态偏置电路,该电路仅利用一组电容和MOS开关,在时钟的控制下即可实现电路动态偏置的切换。The invention provides a fast dynamic bias circuit based on capacitor coupling. The circuit only uses a group of capacitors and MOS switches and can realize the switching of the circuit dynamic bias under the control of a clock.

具体的,如图1所示,包括第一MOS管M1、第二MOS管M2、第三MOS管M3、第四MOS管M4、第五MOS管Msw、解耦电容Cd以及耦合电容Cc,第一MOS管M1的漏极与栅极连接,外加偏置电流IB加载到第一MOS管M1的漏极上,第一MOS管M1的源极接地VSS,第一MOS管M1的栅极与第五MOS管Msw的源极连接,第一MOS管M1的栅极还通过解耦电容Cd接地VSS,第五MOS管Msw的栅极通过耦合电容Cc与第二MOS管M2的栅极连接,第五MOS管Msw的漏极与第二MOS管M2的栅极连接,外部时钟ck加载到第五MOS管Msw的栅极以及耦合电容Cc,控制第五MOS管Msw的开关,第二MOS管M2的源极接地VSS,第二MOS管M2的漏极与第三MOS管M3及第四MOS管M4构成的放大器的差分输入对管连接,IP为差分输入对管的正输入端,IN为差分输入对管的负输入端。Specifically, as shown in FIG. 1 , a first MOS tube M1, a second MOS tube M2, a third MOS tube M3, a fourth MOS tube M4, a fifth MOS tube Msw, a decoupling capacitor Cd and a coupling capacitor Cc are included. The drain of the first MOS tube M1 is connected to the gate, and an external bias current IB is loaded on the drain of the first MOS tube M1. The source of the first MOS tube M1 is grounded to VSS, and the gate of the first MOS tube M1 is connected to the source of the fifth MOS tube Msw. The gate of the first MOS tube M1 is also grounded to VSS through the decoupling capacitor Cd. The fifth MOS tube M The gate of the fifth MOS tube Msw is connected to the gate of the second MOS tube M2 through the coupling capacitor Cc, the drain of the fifth MOS tube Msw is connected to the gate of the second MOS tube M2, the external clock ck is loaded to the gate of the fifth MOS tube Msw and the coupling capacitor Cc to control the switch of the fifth MOS tube Msw, the source of the second MOS tube M2 is grounded to VSS, the drain of the second MOS tube M2 is connected to the differential input pair of the amplifier composed of the third MOS tube M3 and the fourth MOS tube M4, IP is the positive input terminal of the differential input pair, and IN is the negative input terminal of the differential input pair.

当控制时钟ck为高电平,第五MOS管Msw接通,第二MOS管M2的栅极电压Vg等于偏置电压VB,第二MOS管M2管产生偏置电流,给第三MOS管M3及第四MOS管M4构成的放大器的差分输入对管提供工作所需偏置,此时运放处于打开状态;When the control clock ck is at a high level, the fifth MOS transistor Msw is turned on, the gate voltage Vg of the second MOS transistor M2 is equal to the bias voltage VB, and the second MOS transistor M2 generates a bias current to provide the differential input pair of the amplifier composed of the third MOS transistor M3 and the fourth MOS transistor M4 with the required bias for operation. At this time, the operational amplifier is in an on state;

当ck从高电平变低电平时,第五MOS管Msw关断,第二MOS管M2的栅极电压Vg和偏置电压VB断开连接,此时第二MOS管M2的栅极电压Vg节点为高阻节点,根据电荷守恒原理,ck通过耦合电容Cc将第二MOS管M2的栅极电压Vg拉低,拉低的幅度取决于耦合电容Cc和第二MOS管M2栅极电容的比例,但只要拉低的幅度超过第二MOS管M2正常工作的过驱动电压(通常在200mV左右),第二MOS管M2的偏置电流就可以完全关断,这就意味着仅需要较小的耦合电容Cc电容即可实现第二MOS管M2的栅极电压Vg节点的电平移位,减轻了时钟ck的负载,此时运放进入关闭状态;When ck changes from a high level to a low level, the fifth MOS transistor Msw is turned off, and the gate voltage Vg of the second MOS transistor M2 is disconnected from the bias voltage VB. At this time, the gate voltage Vg node of the second MOS transistor M2 is a high-resistance node. According to the charge conservation principle, ck pulls down the gate voltage Vg of the second MOS transistor M2 through the coupling capacitor Cc. The magnitude of the pull-down depends on the ratio of the coupling capacitor Cc to the gate capacitance of the second MOS transistor M2. However, as long as the magnitude of the pull-down exceeds the overdrive voltage (usually about 200mV) of the normal operation of the second MOS transistor M2, the bias current of the second MOS transistor M2 can be completely turned off. This means that only a smaller coupling capacitor Cc is needed to realize the level shift of the gate voltage Vg node of the second MOS transistor M2, thereby reducing the load of the clock ck. At this time, the operational amplifier enters the off state;

当ck重新由低电平变高电平时,根据电荷守恒原理,第二MOS管M2的栅极电压Vg会快速自动回到偏置电压VB的电压位置,实现第二MOS管M2偏置电流的快速切换,运放重新进入打开状态。根据上述过程,偏置管即第二MOS管M2的开关主要由控制时钟ck进行驱动,每当第二MOS管M2的栅极电压Vg要接入偏置电压VB时,第二MOS管M2的栅极电压Vg已自主回到偏置电压VB的位置,因此,无需偏置电压VB去驱动第二MOS管M2开启,偏置电压VB几乎没有收到冲击。而且,第五MOS管Msw仅用于补充第二MOS管M2的栅极电压Vg节点的漏电流,所以第五MOS管Msw可以设计得非常小,这也降低了ck的负载,降低了开关打开和关断所带来的冲击。最后,与传统动态偏置技术相比,本发明所提出的电路,无需在偏置管M2下面串联开关MOS管,因此也消除了开关管导通电压所带来的电压损失,扩大了运放的动态范围。When ck changes from a low level to a high level again, according to the charge conservation principle, the gate voltage Vg of the second MOS tube M2 will quickly and automatically return to the voltage position of the bias voltage VB, realizing the rapid switching of the bias current of the second MOS tube M2, and the operational amplifier re-enters the open state. According to the above process, the bias tube, i.e., the switch of the second MOS tube M2, is mainly driven by the control clock ck. Whenever the gate voltage Vg of the second MOS tube M2 is to be connected to the bias voltage VB, the gate voltage Vg of the second MOS tube M2 has autonomously returned to the position of the bias voltage VB. Therefore, there is no need for the bias voltage VB to drive the second MOS tube M2 to turn on, and the bias voltage VB is almost not impacted. Moreover, the fifth MOS tube Msw is only used to supplement the leakage current of the gate voltage Vg node of the second MOS tube M2, so the fifth MOS tube Msw can be designed to be very small, which also reduces the load of ck and reduces the impact caused by the opening and closing of the switch. Finally, compared with the traditional dynamic bias technology, the circuit proposed by the present invention does not need to connect the switch MOS tube in series under the bias tube M2, so it also eliminates the voltage loss caused by the turn-on voltage of the switch tube, and expands the dynamic range of the operational amplifier.

以上所述仅是本发明的优选实施方式,应当理解本发明并非局限于本文所披露的形式,不应看作是对其他实施例的排除,而可用于各种其他组合、修改和环境,并能够在本文所述构想范围内,通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围,则都应在本发明所附权利要求的保护范围内。The above is only a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the form disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be modified within the scope of the concept described herein through the above teachings or the technology or knowledge of the relevant field. The changes and modifications made by those skilled in the art shall not deviate from the spirit and scope of the present invention, and shall be within the scope of protection of the claims attached to the present invention.

Claims (2)

1. The fast dynamic bias circuit based on capacitive coupling is characterized by comprising a first MOS tube, a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube and a coupling capacitor, wherein the drain electrode of the first MOS tube is connected with a grid electrode, externally applied bias current is loaded on the drain electrode of the first MOS tube, the source electrode of the first MOS tube is grounded, the grid electrode of the first MOS tube is connected with the source electrode of the fifth MOS tube, the grid electrode of the fifth MOS tube is connected with the grid electrode of the second MOS tube through the coupling capacitor, the drain electrode of the fifth MOS tube is connected with the grid electrode of the second MOS tube, an external clock is loaded on the grid electrode of the fifth MOS tube and the coupling capacitor, the switch of the fifth MOS tube is controlled, the source electrode of the second MOS tube is grounded, and the drain electrode of the second MOS tube is connected with a differential input pair tube of an amplifier formed by the third MOS tube and the fourth MOS tube;
When the external clock is at a high level, the fifth MOS tube is conducted, the grid voltage of the second MOS tube is equal to the bias voltage, the second MOS tube generates bias current, and bias needed by work is provided for the differential input pair tube of the amplifier;
When the external clock is changed from high level to low level, the fifth MOS tube is turned off, the grid voltage of the second MOS tube is disconnected with the bias voltage, the external clock pulls down the grid voltage of the second MOS tube through the coupling capacitor, the pulling-down amplitude depends on the ratio of the coupling capacitor to the grid capacitor of the second MOS tube, and then the bias current of the second MOS tube is turned off.
2. The capacitive coupling based fast dynamic bias circuit according to claim 1, further comprising a decoupling capacitor, wherein the gate of the first MOS transistor is further coupled to ground through the decoupling capacitor.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030197549A1 (en) * 2002-04-23 2003-10-23 Carsten Rasmussen Current mirror circuit
CN1555517A (en) * 2001-01-31 2004-12-15 �����ɷ� Bias circuit for maintaining a constant value of transconductance divided by load capacitance
US7218170B1 (en) * 2003-05-23 2007-05-15 Broadcom Corporation Multi-pole current mirror filter
US20080157875A1 (en) * 2006-12-29 2008-07-03 Arya Behzad Method and System for Precise Current Matching in Deep Sub-Micron Technology
US20090085654A1 (en) * 2007-09-29 2009-04-02 Yung-Cheng Lin Biasing Circuit with Fast Response
US20130187629A1 (en) * 2012-01-24 2013-07-25 Synopsys, Inc. Dynamic Biasing of an Amplifier Using Capacitive Driving of Internal Bias Voltages
CN112886957A (en) * 2021-01-08 2021-06-01 中国科学院微电子研究所 High-voltage amplifier and high-voltage generating circuit thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1555517A (en) * 2001-01-31 2004-12-15 �����ɷ� Bias circuit for maintaining a constant value of transconductance divided by load capacitance
US20030197549A1 (en) * 2002-04-23 2003-10-23 Carsten Rasmussen Current mirror circuit
US7218170B1 (en) * 2003-05-23 2007-05-15 Broadcom Corporation Multi-pole current mirror filter
US20080157875A1 (en) * 2006-12-29 2008-07-03 Arya Behzad Method and System for Precise Current Matching in Deep Sub-Micron Technology
US20090085654A1 (en) * 2007-09-29 2009-04-02 Yung-Cheng Lin Biasing Circuit with Fast Response
US20130187629A1 (en) * 2012-01-24 2013-07-25 Synopsys, Inc. Dynamic Biasing of an Amplifier Using Capacitive Driving of Internal Bias Voltages
CN112886957A (en) * 2021-01-08 2021-06-01 中国科学院微电子研究所 High-voltage amplifier and high-voltage generating circuit thereof

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