[go: up one dir, main page]

CN118660466A - A flexible perovskite component and preparation method thereof - Google Patents

A flexible perovskite component and preparation method thereof Download PDF

Info

Publication number
CN118660466A
CN118660466A CN202410958863.3A CN202410958863A CN118660466A CN 118660466 A CN118660466 A CN 118660466A CN 202410958863 A CN202410958863 A CN 202410958863A CN 118660466 A CN118660466 A CN 118660466A
Authority
CN
China
Prior art keywords
layer
barrier layer
flexible
perovskite
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410958863.3A
Other languages
Chinese (zh)
Inventor
蔡子贺
赵政晶
赵志国
赵东明
秦校军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huaneng Clean Energy Research Institute
Original Assignee
Huaneng Clean Energy Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huaneng Clean Energy Research Institute filed Critical Huaneng Clean Energy Research Institute
Priority to CN202410958863.3A priority Critical patent/CN118660466A/en
Publication of CN118660466A publication Critical patent/CN118660466A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Embodiments of the present disclosure provide a flexible perovskite assembly and a method of making the same, the method of making comprising: after P1 scribing, depositing a nanoscale first barrier layer on the first surface of the flexible substrate to block water and oxygen; and preparing a top combined layer on the first barrier layer and the residual bottom conductive layer, carrying out P3 scribing on the top combined layer and the residual bottom conductive layer, and then depositing a nanoscale second barrier layer on the second surface of the flexible substrate to block water and oxygen. According to the preparation method of the flexible perovskite component, the first barrier layer and the second barrier layer are respectively deposited on the first surface and the second surface of the flexible substrate, so that water vapor can be reduced from entering the flexible perovskite component.

Description

Flexible perovskite component and preparation method thereof
Technical Field
The embodiment of the disclosure belongs to the technical field of perovskite batteries, and particularly relates to a flexible perovskite component and a preparation method thereof.
Background
PEN or PET is generally adopted as a base material of the flexible perovskite component, and after P1 scribing and P3 scribing are carried out in the preparation process of the flexible component, ITO electric layers on the surface of the base material are removed, so that the water vapor blocking capacity of a light receiving surface of the component is reduced, and the service life of a formed battery is influenced.
Disclosure of Invention
Embodiments of the present disclosure aim to solve at least one of the technical problems existing in the prior art, providing a flexible perovskite assembly and a method of manufacturing the same.
In one aspect, embodiments of the present disclosure provide a method of preparing a flexible perovskite assembly, the method of preparing comprising:
Scribing the bottom conductive layer on the flexible substrate to obtain a plurality of P1 scribing lines which are spaced from each other, removing the bottom conductive layer at the position where the P1 scribing lines are located, and exposing the first surface of the flexible substrate below the bottom conductive layer;
Depositing a nanoscale first barrier layer on a first surface of the flexible substrate to block water and oxygen;
Preparing a top combined layer on the first barrier layer and the rest of the bottom conductive layer, wherein the top combined layer comprises a hole transport layer positioned on the first barrier layer and the rest of the bottom conductive layer, and a perovskite layer, an electron transport layer, a barrier layer and an electrode layer which are positioned on the hole transport layer and are sequentially stacked;
Scribing the top combined layer and the rest of the bottom conductive layer to obtain a plurality of P3 scribing lines which are spaced from each other, removing the top combined layer and the rest of the bottom conductive layer at the positions of the P3 scribing lines corresponding to each other, and exposing the second surface of the flexible substrate below the top combined layer and the rest of the bottom conductive layer;
and depositing a nanoscale second barrier layer on the second surface of the flexible substrate to block water and oxygen.
Optionally, the thickness of the first barrier layer and the second barrier layer is in a range of 4 nm-6 nm.
Optionally, the first barrier layer and the second barrier layer are both SnO2 layers.
Optionally, the first barrier layer and the second barrier layer are both deposited by atomic layer deposition.
Optionally, when the first barrier layer is deposited by the atomic layer deposition method, the deposition temperature of the atomic layer deposition method is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 10s, and the cycle number is 500.
Optionally, when the second barrier layer is deposited by the atomic layer deposition method, the deposition temperature of the atomic layer deposition method is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 250.
Optionally, the hole transport layer is a NiOx hole transport layer, the perovskite layer is a C 0.05FA0.95PbI3 perovskite layer, the electron transport layer is a C60 electron transport layer, the barrier layer is a SnO2 barrier layer, and the electrode layer is a gold electrode layer.
Optionally, the thickness of the hole transport layer ranges from 18nm to 22nm, the thickness of the perovskite layer ranges from 460nm to 540nm, the thickness of the electron transport layer ranges from 25nm to 35nm, the thickness of the blocking layer ranges from 4nm to 6nm, and the thickness of the electrode layer ranges from 750nm to 850nm.
In another aspect, embodiments of the present disclosure provide a flexible perovskite assembly, obtained using the preparation method as described above.
According to the flexible perovskite component and the preparation method thereof, the first blocking layer and the second blocking layer are respectively deposited on the first surface and the second surface of the flexible substrate, so that the water vapor blocking capacity of the light receiving surface of the flexible perovskite component can be improved, the water vapor entering the flexible perovskite component is reduced, and the service life of a battery formed by the flexible perovskite component is prolonged.
Drawings
FIG. 1 is a schematic block flow diagram of a method of making a flexible perovskite assembly according to one embodiment of the disclosure;
FIG. 2 is a schematic structural view of a flexible substrate and bottom conductive layer of a flexible perovskite assembly of another embodiment of the disclosure prior to P1 scribing;
FIG. 3 is a schematic illustration of the structure of the flexible substrate and bottom conductive layer of the flexible perovskite assembly of FIG. 2 after P1 scribing;
FIG. 4 is a schematic structural view of a flexible perovskite assembly of another embodiment of the disclosure with a flexible substrate, bottom conductive layer and top combination layer prior to P3 scribing;
Fig. 5 is a schematic structural view of the flexible perovskite assembly of fig. 4 after P3 scribing of the flexible substrate, bottom conductive layer and top combination layer.
Detailed Description
In order that those skilled in the art will better understand the technical solutions of the present disclosure, the present disclosure will be described in further detail with reference to the accompanying drawings and detailed description.
As shown in fig. 1, a method 100 for manufacturing a flexible perovskite assembly, the method 100 includes S110, scribing a bottom conductive layer on a flexible substrate to obtain a plurality of P1 scribe lines spaced from each other, and removing the bottom conductive layer at positions where the P1 scribe lines are located, so as to expose a first surface of the flexible substrate below the bottom conductive layer.
Specifically, referring to fig. 2 and 3 together, in this step, the bottom conductive layer 220 on the flexible substrate 210 is subjected to the P1 scribe line 300, and then the bottom conductive layer 220 at the position of each P1 scribe line groove is removed, so as to expose the first surface 211 of the flexible substrate 210 at the position corresponding to each P1 scribe line groove. A plurality of P1 scribe lines 300 divide the bottom conductive layer 220 into a plurality of side-by-side sub-regions.
And S120, depositing a nanoscale first barrier layer on the first surface of the flexible substrate to block water and oxygen.
Specifically, referring to fig. 3 and 4 together, a nanoscale first barrier layer 212 is deposited on the first surface 211 of the flexible substrate 210 to block moisture.
Illustratively, the thickness of the first barrier layer 212 ranges from 4nm to 6nm, such as 4.5nm, 5nm. The first barrier layer 212 may be a SnO2 layer to better block water vapor. In addition, the first barrier layer may be an aluminum oxide layer or a silicon oxide layer.
When the first barrier layer 212 is a SnO2 layer and is deposited by atomic layer deposition, specifically, a deposition temperature of 100 ℃, a tin source temperature of 70 ℃, a tin source pulse time of 0.05s, a cleaning time of 6s, a water pulse time of 0.02s, a cleaning time of 10s, and a number of cycles of 500 may be set. The specific deposition process is as follows:
First, the temperature within the reaction chamber is set to 100 ℃ in order to ensure that the precursor can be efficiently adsorbed and reacted at the first surface 211 of the flexible substrate 210 while avoiding damage to the flexible substrate 210. The tin source is maintained at 70 c which aids in the vaporization and efficient delivery of the precursor into the reaction chamber. Then, a precursor vapor of a tin source (e.g., dimethyltin DMSn or tetrabutyltin TBT) is pulsed into the reaction chamber for a duration of 0.05 seconds. During this brief period, the precursor molecules will rapidly adsorb to the first surface 211 of the flexible substrate 210, forming a monolayer.
Next, the reaction chamber is purged with an inert gas (e.g., argon or nitrogen) for 6 seconds to remove unreacted tin source precursor and possible byproducts. Subsequently, water vapor was pulsed into the reaction chamber as the oxidant for 0.02 seconds. The water molecules react with the previously adsorbed tin precursor to form a layer of SnO 2. The inert gas is again purged for 10 seconds to remove the remaining water vapor and any reaction byproducts.
The deposition process is a complete cycle, repeated 500 times. The thickness of the SnO2 layer increased every time a cycle is made very thin. After 500 cycles, a layer of SnO2 of the desired thickness was obtained.
It should be noted that the short pulse time ensures self-limiting adsorption, and that only a monolayer is formed per pulse, which is critical for achieving atomic level control. The long-time cleaning is helpful for reducing cross contamination among different cycles and ensuring the purity and uniformity of the film. The number of cycles can determine the thickness of the final barrier layer and by precisely controlling the number of cycles a predetermined nanoscale thickness can be achieved. Through the precisely controlled process, the SnO2 barrier layer with high quality, uniformity and precisely controllable thickness can be obtained, which is beneficial to improving the performance of electronic devices and protecting the flexible substrate from environmental influences.
And S130, preparing a top combined layer on the first barrier layer and the rest of the bottom conductive layer, wherein the top combined layer comprises a hole transport layer on the first barrier layer and the rest of the bottom conductive layer, and a perovskite layer, an electron transport layer, a barrier layer and an electrode layer which are positioned on the hole transport layer and are stacked in sequence.
Specifically, referring also to fig. 4, a top combined layer 230 is prepared on the first barrier layer 212 and the bottom conductive layer 220 of the remaining plurality of sub-regions. The top combination layer 230 includes a hole transport layer 231, a perovskite layer 232, an electron transport layer 233, a barrier layer 234, and an electrode layer 235. A hole transport layer 231 is prepared on the first barrier layer 212 and the bottom conductive layer 220 of the remaining plurality of sub-regions, a perovskite layer 232 is prepared on the hole transport layer 231, an electron transport layer 233 is prepared on the perovskite layer 232, a barrier layer 234 is prepared on the electron transport layer 233, and an electrode layer 235 is prepared on the barrier layer 234.
Illustratively, the hole transport layer 231 is provided as a NiOx hole transport layer, the perovskite layer 232 is provided as a C 0.05FA0.95PbI3 perovskite layer, the electron transport layer 233 is provided as a C60 electron transport layer, the barrier layer 234 is provided as a SnO2 barrier layer, and the electrode layer 235 is provided as a gold electrode layer. The SnO2 barrier layer can prevent I ions in the perovskite layer from migrating and corroding the electrode layer.
Further, the hole transport layer 231 may be provided in a thickness range of 18nm to 22nm, such as 19nm, 20nm, or the like. The thickness of the perovskite layer 232 is set to be 460nm to 540nm, such as 480nm, 500nm, 520nm, etc. The electron transport layer 233 is provided in a thickness range of 25nm to 35nm, such as 28nm, 30nm, and the like. The thickness of the barrier layer 234 is set in the range of 4nm to 6nm, such as 5nm, 5.5nm, etc. The thickness of the electrode layer 235 is set in the range of 750nm to 850nm, such as 780nm, 800nm, 830nm, and the like.
And S140, scribing the top combined layer and the rest of the bottom conductive layer to obtain a plurality of P3 scribing lines which are spaced from each other, removing the top combined layer and the rest of the bottom conductive layer at the positions where the P3 scribing lines are located, and exposing the second surface of the flexible substrate below the top combined layer and the rest of the bottom conductive layer.
Specifically, referring to fig. 5 together, in this step, the top combined layer 230 and the remaining bottom conductive layer 220 are subjected to P3 scribing 400, and then the top combined layer 230 and the remaining bottom conductive layer 220 at the positions where the respective P3 scribing grooves are located are removed, so that the second surface 213 of the flexible substrate 210 under the positions corresponding to the respective P3 scribing grooves is exposed.
And S150, depositing a nanoscale second barrier layer on the second surface of the flexible substrate to block water and oxygen.
Specifically, referring to fig. 5, a nanoscale second barrier layer (not labeled) is deposited on the second surface 213 of the flexible substrate 210 to block water vapor.
Illustratively, the thickness of the second barrier layer ranges from 4nm to 6nm, such as 4.5nm, 5nm. The second barrier layer may be a SnO2 layer to better block water vapor. In addition, the second barrier layer may be an aluminum oxide layer or a silicon oxide layer.
When the second barrier layer is a SnO2 layer and is deposited by atomic layer deposition, specifically, a deposition temperature of 100 ℃, a tin source temperature of 70 ℃, a tin source pulse time of 0.05s, a cleaning time of 6s, a water pulse time of 0.02s, a cleaning time of 6s, and a number of cycles of 250 may be set. The specific deposition process is as follows:
First, the temperature in the reaction chamber is set to 100 ℃ in order to ensure that the precursor can be efficiently adsorbed and reacted on the second surface 213 of the flexible substrate 210 while avoiding damage to the flexible substrate 210. The tin source is maintained at 70 c which aids in the vaporization and efficient delivery of the precursor into the reaction chamber. Then, a precursor vapor of a tin source (e.g., dimethyltin DMSn or tetrabutyltin TBT) is pulsed into the reaction chamber for a duration of 0.05 seconds. During this brief period, the precursor molecules will rapidly adsorb to the second surface 213 of the flexible substrate 210, forming a monolayer.
Next, the reaction chamber is purged with an inert gas (e.g., argon or nitrogen) for 6 seconds to remove unreacted tin source precursor and possible byproducts. Subsequently, water vapor was pulsed into the reaction chamber as the oxidant for 0.02 seconds. The water molecules react with the previously adsorbed tin precursor to form a layer of SnO 2. The inert gas is again purged for 6 seconds to remove the remaining water vapor and any reaction byproducts.
The deposition process was a complete cycle, repeated 250 times. The thickness of the SnO2 layer increased every time a cycle is made very thin. After 250 cycles, a layer of SnO2 of the desired thickness was obtained.
The following detailed description is made by way of some specific examples:
Example 1: depositing a first barrier layer: after P1 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (first barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 250.
Preparing a top combined layer: hole transport layers (NiOx, 20 nm), perovskite layers (C 0.05FA0.95PbI3, 500 nm), electron transport layers (C60, 30 nm), barrier layers (SnO 2,5 nm), electrode layers (gold, 800 nm) were prepared by stacking in this order, respectively.
Depositing a second barrier layer: after P3 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (second barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 250.
Example 2: depositing a first barrier layer: after P1 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (first barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 500.
Preparing a top combined layer: hole transport layers (NiOx, 20 nm), perovskite layers (C 0.05FA0.95PbI3, 500 nm), electron transport layers (C60, 30 nm), barrier layers (SnO 2,5 nm), electrode layers (gold, 800 nm) were prepared by stacking in this order, respectively.
Depositing a second barrier layer: after P3 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (second barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 250.
Example 3: depositing a first barrier layer: after P1 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (first barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 10s, and the cycle number is 500.
Preparing a top combined layer: hole transport layers (NiOx, 20 nm), perovskite layers (C 0.05FA0.95PbI3, 500 nm), electron transport layers (C60, 30 nm), barrier layers (SnO 2,5 nm), electrode layers (gold, 800 nm) were prepared by stacking in this order, respectively.
Depositing a second barrier layer: after P3 scribing, an atomic layer deposition method is adopted to deposit a SnO2 barrier layer (second barrier layer) with the thickness of 5nm on the PEN/ITO flexible substrate, wherein the deposition temperature is 100 ℃, the tin source temperature is 70 ℃, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the cycle number is 250.
Example 4: no barrier layer deposition was performed after both P1 and P3 scribe lines.
The effects of the four embodiments described above are shown in the following table:
Initial efficiency (%) Humid heat aging life (T90 (hours) at 85 ℃ C., 85% RH)
Example 1 15.6 235
Example 2 16.2 365
Example 3 16.5 580
Example 4 15.8 123
According to the preparation method of the flexible perovskite component, the first blocking layer and the second blocking layer are respectively deposited on the first surface and the second surface of the flexible substrate, so that the water vapor blocking capacity of the light receiving surface of the flexible perovskite component can be improved, water vapor entering the flexible perovskite component is reduced, and the service life of a battery formed by the flexible perovskite component is prolonged.
On the other hand, the embodiment of the present disclosure provides a flexible perovskite component, which is obtained by adopting the preparation method described in the foregoing, and specific steps of the preparation method may be referred to in the foregoing related description, and will not be repeated herein. The flexible perovskite component can be further processed into a perovskite battery, and the first blocking layer and the second blocking layer are respectively deposited on the first surface and the second surface of the flexible substrate, so that the water vapor blocking capability of the light receiving surface of the flexible perovskite component can be improved, the water vapor entering the flexible perovskite component is reduced, and the service life of the perovskite battery formed by the flexible perovskite component is prolonged.
It is to be understood that the above embodiments are merely exemplary embodiments employed to illustrate the principles of the present disclosure, however, the present disclosure is not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the disclosure, and are also considered to be within the scope of the disclosure.

Claims (9)

1.一种柔性钙钛矿组件的制备方法，其特征在于，所述制备方法包括：1. A method for preparing a flexible perovskite component, characterized in that the preparation method comprises: 对柔性基底上的底部导电层进行划线加工，得到多条相互间隔的P1划线，去除两两对应的所述P1划线所在位置处的所述底部导电层，露出其下的所述柔性基底的第一表面；Performing a scribing process on the bottom conductive layer on the flexible substrate to obtain a plurality of mutually spaced P1 scribing lines, and removing the bottom conductive layer at positions where the two corresponding P1 scribing lines are located to expose the first surface of the flexible substrate thereunder; 在所述柔性基底的第一表面沉积纳米级第一阻隔层，用以阻隔水氧；Depositing a nanoscale first barrier layer on the first surface of the flexible substrate to block water and oxygen; 在所述第一阻隔层和剩余所述底部导电层上制备顶部组合层，所述顶部组合层包括位于所述第一阻隔层和剩余所述底部导电层上的空穴传输层，以及位于所述空穴传输层上且依次堆叠的钙钛矿层、电子传输层、阻挡层和电极层；Preparing a top composite layer on the first barrier layer and the remaining bottom conductive layer, the top composite layer comprising a hole transport layer located on the first barrier layer and the remaining bottom conductive layer, and a perovskite layer, an electron transport layer, a blocking layer and an electrode layer located on the hole transport layer and stacked in sequence; 对所述顶部组合层和剩余所述底部导电层进行划线加工，得到多条相互间隔的P3划线，去除两两对应的所述P3划线所在位置处的所述顶部组合层和剩余所述底部导电层，露出其下的所述柔性基底的第二表面；Performing a scribing process on the top composite layer and the remaining bottom conductive layer to obtain a plurality of P3 scribing lines spaced apart from each other, and removing the top composite layer and the remaining bottom conductive layer at positions where the two corresponding P3 scribing lines are located to expose the second surface of the flexible substrate thereunder; 在所述柔性基底的第二表面沉积纳米级第二阻隔层，用以阻隔水氧。A nanometer-scale second barrier layer is deposited on the second surface of the flexible substrate to block water and oxygen. 2.根据权利要求1所述的柔性钙钛矿组件的制备方法，其特征在于，所述第一阻隔层和所述第二阻隔层的厚度范围均处于4nm～6nm。2. The method for preparing a flexible perovskite component according to claim 1, wherein the thickness of the first barrier layer and the second barrier layer are both in the range of 4 nm to 6 nm. 3.根据权利要求1所述的柔性钙钛矿组件的制备方法，其特征在于，所述第一阻隔层和所述第二阻隔层均为SnO2层。3. The method for preparing a flexible perovskite component according to claim 1, wherein the first barrier layer and the second barrier layer are both SnO2 layers. 4.根据权利要求1所述的柔性钙钛矿组件的制备方法，其特征在于，所述第一阻隔层和所述第二阻隔层均采用原子层沉积法沉积得到。4. The method for preparing a flexible perovskite component according to claim 1, wherein the first barrier layer and the second barrier layer are both deposited by atomic layer deposition. 5.根据权利要求4所述的柔性钙钛矿组件的制备方法，其特征在于，当所述第一阻隔层采用所述原子层沉积法沉积时，所述原子层沉积法的沉积温度为100℃、锡源温度为70℃、锡源脉冲时间为0.05s、清洗时间为6s、水脉冲时间为0.02s、清洗时间为10s、循环次数为500次。5. The method for preparing a flexible perovskite component according to claim 4 is characterized in that when the first barrier layer is deposited by the atomic layer deposition method, the deposition temperature of the atomic layer deposition method is 100°C, the tin source temperature is 70°C, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 10s, and the number of cycles is 500 times. 6.根据权利要求4所述的柔性钙钛矿组件的制备方法，其特征在于，当所述第二阻隔层采用所述原子层沉积法沉积时，所述原子层沉积法的沉积温度为100℃、锡源温度为70℃、锡源脉冲时间为0.05s、清洗时间为6s、水脉冲时间为0.02s、清洗时间为6s、循环次数为250次。6. The method for preparing a flexible perovskite component according to claim 4 is characterized in that when the second barrier layer is deposited by the atomic layer deposition method, the deposition temperature of the atomic layer deposition method is 100°C, the tin source temperature is 70°C, the tin source pulse time is 0.05s, the cleaning time is 6s, the water pulse time is 0.02s, the cleaning time is 6s, and the number of cycles is 250 times. 7.根据权利要求1至6任一项所述的柔性钙钛矿组件的制备方法，其特征在于，所述空穴传输层为NiOx空穴传输层，所述钙钛矿层为C0.05FA0.95PbI3钙钛矿层，所述电子传输层为C60电子传输层，所述阻挡层为SnO2阻挡层，所述电极层为金电极层。7. The method for preparing a flexible perovskite component according to any one of claims 1 to 6, characterized in that the hole transport layer is a NiOx hole transport layer, the perovskite layer is a C 0.05 FA 0.95 PbI 3 perovskite layer, the electron transport layer is a C60 electron transport layer, the blocking layer is a SnO2 blocking layer, and the electrode layer is a gold electrode layer. 8.根据权利要求7所述的柔性钙钛矿组件的制备方法，其特征在于，所述空穴传输层的厚度范围为18nm～22nm，所述钙钛矿层的厚度范围为460nm～540nm，所述电子传输层的厚度范围为25nm～35nm，所述阻挡层的厚度范围为4nm～6nm，所述电极层的厚度范围为750nm～850nm。8. The method for preparing a flexible perovskite component according to claim 7 is characterized in that the thickness range of the hole transport layer is 18nm to 22nm, the thickness range of the perovskite layer is 460nm to 540nm, the thickness range of the electron transport layer is 25nm to 35nm, the thickness range of the barrier layer is 4nm to 6nm, and the thickness range of the electrode layer is 750nm to 850nm. 9.一种柔性钙钛矿组件，其特征在于，采用权利要求1至8任一项所述的制备方法得到。9. A flexible perovskite component, characterized in that it is obtained by the preparation method described in any one of claims 1 to 8.
CN202410958863.3A 2024-07-17 2024-07-17 A flexible perovskite component and preparation method thereof Pending CN118660466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410958863.3A CN118660466A (en) 2024-07-17 2024-07-17 A flexible perovskite component and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410958863.3A CN118660466A (en) 2024-07-17 2024-07-17 A flexible perovskite component and preparation method thereof

Publications (1)

Publication Number Publication Date
CN118660466A true CN118660466A (en) 2024-09-17

Family

ID=92702023

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410958863.3A Pending CN118660466A (en) 2024-07-17 2024-07-17 A flexible perovskite component and preparation method thereof

Country Status (1)

Country Link
CN (1) CN118660466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119789673A (en) * 2025-03-11 2025-04-08 北京大学长三角光电科学研究院 An ultra-flexible packaging structure of a perovskite optoelectronic component and its packaging method and application

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119789673A (en) * 2025-03-11 2025-04-08 北京大学长三角光电科学研究院 An ultra-flexible packaging structure of a perovskite optoelectronic component and its packaging method and application

Similar Documents

Publication Publication Date Title
CN102576898B (en) Thin-film battery methods for complexity reduction
KR20140003776A (en) Preparation of a high resistivity zno thin film
JP2012523018A5 (en) Electrochromic window
US12112897B2 (en) Methods for perovskite device processing by vapor transport deposition
CN118660466A (en) A flexible perovskite component and preparation method thereof
KR20130092352A (en) Doping method of atomic layer deposition
CN109309162A (en) A kind of perovskite-based thin film solar cell and preparation method thereof
US20180057939A1 (en) Manufacturing method of transparent electrode
JP2023148126A (en) Method for manufacturing perovskite thin film-based solar cell, and perovskite thin film-based solar cell
CN114242897A (en) A kind of encapsulation method of perovskite optoelectronic device
US10395845B2 (en) Flexible Ti—In—Zn—O transparent electrode for dye-sensitized solar cell, and metal-inserted three-layer transparent electrode with high conductivity using same and manufacturing method therefor
CN110120434B (en) Battery sheet and preparation method thereof
JP7745003B2 (en) Solar cell and manufacturing method thereof
TWI867102B (en) Method of forming electrode
CN115548215A (en) A kind of preparation method of stacked perovskite solar cell
CN115207158A (en) Preparation method of solar cell, solar cell coating substrate and application thereof
KR102700415B1 (en) Method for manufacturing Perovskite Photodiode Using Thermal Deposition Process
CN119710547A (en) Preparation method of nickel oxide film and preparation method of perovskite solar cell
JP6994867B2 (en) Manufacturing method of photoelectric conversion element
JP6994866B2 (en) Manufacturing method of photoelectric conversion element
EP4456156A1 (en) Tandem solar cell and method of manufacturing the same
KR20110100721A (en) Solar cell, manufacturing method and etching equipment for manufacturing solar cell
CN119730672A (en) Perovskite battery and preparation method thereof
JP6899731B2 (en) Manufacturing method of photoelectric conversion element
KR100272249B1 (en) Modifying method for double layer type gate pole

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination