CN118671819B - A self-calibration measurement method for the turn-on voltage of a PIN semiconductor detector - Google Patents
A self-calibration measurement method for the turn-on voltage of a PIN semiconductor detector Download PDFInfo
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- CN118671819B CN118671819B CN202411148581.3A CN202411148581A CN118671819B CN 118671819 B CN118671819 B CN 118671819B CN 202411148581 A CN202411148581 A CN 202411148581A CN 118671819 B CN118671819 B CN 118671819B
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- 238000000691 measurement method Methods 0.000 title claims abstract description 18
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- 238000009792 diffusion process Methods 0.000 claims description 18
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- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
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Abstract
本发明公开了一种PIN半导体探测器开启电压的自校准测量方法，属于半导体技术领域，包括以下步骤：对PIN半导体探测器进行变温开启电压实验，获取PIN半导体探测器的工作温度与正向开启电压的对应关系；实时获取PIN半导体探测器上施加的正向开启电压大小；根据PIN半导体探测器工作温度与正向开启电压的对应关系，确定当前PIN半导体探测器的工作温度，并计算确定当前PIN半导体探测器的反向暗电流大小；根据计算得到的反向暗电流大小对PIN半导体探测器的信号电流进行校准。本发明无需外加温度检测模块即可实现PIN半导体探测器的内部工作温度自检测，简化了探测系统，增加了系统可靠性。
The present invention discloses a self-calibration measurement method for the turn-on voltage of a PIN semiconductor detector, which belongs to the field of semiconductor technology and includes the following steps: performing a variable temperature turn-on voltage experiment on the PIN semiconductor detector to obtain the corresponding relationship between the operating temperature and the forward turn-on voltage of the PIN semiconductor detector; obtaining the magnitude of the forward turn-on voltage applied to the PIN semiconductor detector in real time; determining the current operating temperature of the PIN semiconductor detector according to the corresponding relationship between the operating temperature and the forward turn-on voltage of the PIN semiconductor detector, and calculating and determining the magnitude of the reverse dark current of the current PIN semiconductor detector; and calibrating the signal current of the PIN semiconductor detector according to the magnitude of the reverse dark current obtained by calculation. The present invention can realize the internal operating temperature self-detection of the PIN semiconductor detector without an external temperature detection module, simplifies the detection system, and increases the system reliability.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a self-calibration measurement method for the starting voltage of a PIN semiconductor detector.
Background
In the radiation detection field, the temperature change of the PIN semiconductor radiation detector can occur due to the reasons of external environment heat transfer, nuclear reaction of radiation sources and detector materials, application of an external power supply and the like in the working process, and when radiation detection is carried out in a low-temperature environment, the temperature change of the PIN semiconductor radiation detector has obvious influence on the accuracy of detector signal current, and particularly when the working temperature of the PIN semiconductor radiation detector is increased, the internal reverse dark current of the PIN semiconductor radiation detector is increased.
In performing radiation detection, the PIN semiconductor radiation detector needs to operate at a reverse operating voltage. The radiation particles cause an ionization reaction inside the PIN semiconductor radiation detector, creating electron-hole pairs that flow directionally under reverse operating voltages, thereby creating a signal current. However, when the PIN semiconductor detector is not irradiated, a reverse dark current is still generated due to the thermal excitation effect and the externally applied working voltage, and the reverse dark current is overlapped with the signal current to influence the signal accuracy of the PIN semiconductor radiation detector. The higher the working temperature of the PIN semiconductor radiation detector is, the larger the reverse dark current is, and the deeper the interference degree to signals is, therefore, the real-time temperature of the PIN semiconductor radiation detector during working is required to be detected, so that the real-time reverse dark current is calculated, and the calibration of the signal current is realized.
The current temperature detection method for the PIN semiconductor radiation detector is usually infrared temperature detection or thermocouple, wherein the detected temperature is the surface temperature of the detector for an infrared temperature detection system, and the detected temperature is related to the current of a circuit in which the detector is positioned for a thermocouple system. Both temperature detection modes have the problem that the detection of the internal working temperature of the detector cannot be directly realized, and the reliability of the system is reduced due to the fact that an additional large module is added in the detection system. In an extreme low-temperature working environment, the requirements on the accuracy of detection of the working temperature of the PIN semiconductor radiation detector and the reliability of a detection system are further improved, so that the self-detection of the working temperature of the PIN semiconductor radiation detector and the self-calibration of the signal current of the PIN semiconductor radiation detector are necessary to be realized by utilizing the existing electrical parameters of the detection system.
Disclosure of Invention
In order to solve the technical problems, the invention provides a self-calibration measurement method of the PIN semiconductor detector starting voltage, which is simple in algorithm and high in measurement accuracy.
The invention solves the technical problems by adopting the technical scheme that the self-calibration measurement method of the starting voltage of the PIN semiconductor detector comprises the following steps:
S1, carrying out a temperature-changing starting voltage experiment on a PIN semiconductor detector to obtain a corresponding relation between the working temperature of the PIN semiconductor detector and forward starting voltage;
s2, acquiring the forward starting voltage applied to the PIN semiconductor detector in real time;
S3, determining the working temperature of the current PIN semiconductor detector according to the corresponding relation between the working temperature of the PIN semiconductor detector and the forward starting voltage, and calculating and determining the magnitude of the reverse dark current of the current PIN semiconductor detector;
And S4, calibrating the signal current of the PIN semiconductor detector according to the calculated reverse dark current.
The self-calibration measurement method of the PIN semiconductor detector starting voltage is realized based on a measurement system, and the measurement system comprises:
The PIN semiconductor detector is of a P-I-N junction diode structure, and a signal PIN of the PIN semiconductor detector is communicated with the driving system;
the driving system provides forward and reverse working voltages of the PIN semiconductor detector and detects the working voltage and the uncalibrated signal current of the PIN semiconductor detector;
and the processor is used for calculating the working temperature and the working reverse dark current of the PIN semiconductor detector in real time, calibrating and outputting the signal current of the PIN semiconductor detector according to the working reverse dark current.
In the step S1, in the temperature-changing starting voltage experiment, the PIN semiconductor detector to be detected needs to be placed on a solid heating table and is connected to a current test circuit, a voltage source in the circuit is gradually lifted in a single test, when the PIN semiconductor detector is started, the signal current of the PIN semiconductor detector is rapidly increased, the starting phenomenon is ensured to be observed in the single test, and the forward current density of the PIN semiconductor detector after the PIN semiconductor detector is started is recordedChanging the temperature of the solid heating tableAnd repeatedly recording the forward current density of the PIN semiconductor detector at different temperaturesWith voltage sourceThe situation is changed.
In the above self-calibration measurement method of the turn-on voltage of the PIN semiconductor detector, in the step S1, the experiment is performed multiple times to obtain at least five signals including the turn-on phenomenon of the PIN semiconductor detector-A change curve.
In the self-calibration measurement method of the turn-on voltage of the PIN semiconductor detector, in the step S1, a manual provided by a manufacturer is queried to obtain material information of the PIN semiconductor detector, and intrinsic carrier concentration of the PIN semiconductor detector to be measured is obtainedHalf width of drift regionBipolar diffusion coefficientThe PIN semiconductor detector is calculated at different working temperatures byLower turn-on voltage:
Wherein: Is the basic charge quantity; is the boltzmann coefficient; voltage drop for drift region of PIN semiconductor detector; is bipolar diffusion length; the service life of the PIN semiconductor detector is prolonged; For intermediate quantities, tanh is a hyperbolic tangent function;
calculating to obtain the starting voltage of the PIN semiconductor detector to be tested Linear fitting is carried out with the working temperature T data to obtainAnd (T) a function, and recording the function into a processor of the measurement system.
In the self-calibration measurement method of the turn-on voltage of the PIN semiconductor detector, in the step S3, during the operation of the PIN semiconductor radiation detector, a dark current is reversedThe relation to the real-time operating temperature is calculated by:
Wherein: for the n-region diffusion coefficient of the PIN semiconductor detector, The p-region diffusion coefficient of the PIN semiconductor detector; for the n-region diffusion length of the PIN semiconductor detector, The p-region diffusion length of the PIN semiconductor detector; Acceptor doping concentrations for the PIN semiconductor detector, Donor doping concentration for PIN semiconductor detector.
In the self-calibration measurement method of the PIN semiconductor detector starting voltage, in the step S1, the temperature-changing starting voltage experiment is carried out under the conditions of light shielding, constant temperature and room pressure.
The invention has the beneficial effects that:
1. According to the invention, the linear corresponding relation between the working temperature of the PIN semiconductor radiation detector and the forward starting voltage is obtained, the corresponding relation is related to the performance of the material of the PIN semiconductor radiation detector, the working temperature of the PIN semiconductor radiation detector can be directly obtained according to the relation through temperature-changing starting voltage experimental test. The invention can realize the self-detection of the internal working temperature of the PIN semiconductor detector without an external temperature detection module, simplifies the detection system and increases the reliability of the system.
2. The invention improves the measurement accuracy of the PIN semiconductor radiation detector, reduces the measurement error of the working temperature of the PIN semiconductor detector, and reduces the reverse dark current error of the PIN semiconductor detector calculated by the working temperature, thereby reducing the measurement system error after calibration.
Drawings
FIG. 1 is a flow chart of the present invention.
FIG. 2 is a schematic circuit diagram of a measurement system used in the present invention.
In the figure, 1 is a PIN semiconductor detector, 2 is a processor, 3 is a first power supply, 4 is a second power supply, 5 is a current measuring device, and 6 is a voltage measuring device.
Detailed Description
The invention is further described below with reference to the drawings and examples.
As shown in fig. 1, a self-calibration measurement method of the turn-on voltage of a PIN semiconductor detector includes the following steps:
S1, carrying out a temperature-changing starting voltage experiment on the PIN semiconductor detector to obtain a corresponding relation between the working temperature of the PIN semiconductor detector and the forward starting voltage.
The signal current of the PIN semiconductor radiation detector is interfered by the reverse dark current, and the magnitude of the reverse dark current is related to the working temperature of the PIN semiconductor radiation detector, so that the relation between the working temperature and the starting voltage of the PIN semiconductor radiation detector can be represented through a temperature-changing starting voltage experiment, and the real-time working temperature and the reverse dark current can be judged through the starting voltage of the PIN semiconductor radiation detector during working.
In order to avoid the interference of the surrounding environment, the temperature-changing starting voltage experiment is carried out under the conditions of light shielding, constant temperature and room pressure. In the temperature-changing starting voltage experiment, a PIN semiconductor detector to be tested is required to be placed on a solid heating table and connected to a current test circuit, a voltage source in the circuit is gradually increased in a single test, after the PIN semiconductor detector is started, signal current of the PIN semiconductor detector is rapidly increased, the starting phenomenon is ensured to be observed in the single test, and the forward current density of the PIN semiconductor detector after the PIN semiconductor detector is started is recordedChanging the temperature of the solid heating tableAnd repeatedly recording the forward current density of the PIN semiconductor detector at different temperaturesWith voltage sourceThe situation is changed. The experiment is carried out for a plurality of times to obtain at least five semiconductor detectors containing PIN-A change curve.
Inquiring a manual provided by a manufacturer to obtain material information of the PIN semiconductor detector, and obtaining the intrinsic carrier concentration of the PIN semiconductor detector to be detectedHalf width of drift regionBipolar diffusion coefficientThe PIN semiconductor detector is calculated at different working temperatures byLower turn-on voltage:
Wherein: Is the basic charge quantity; is the boltzmann coefficient; voltage drop for drift region of PIN semiconductor detector; is bipolar diffusion length; the service life of the PIN semiconductor detector is prolonged; For intermediate quantities, tanh is a hyperbolic tangent function;
calculating to obtain the starting voltage of the PIN semiconductor detector to be tested Linear fitting is carried out with the working temperature T data to obtainAnd (T) a function, and recording the function into a processor of the measurement system.
S2, acquiring the forward opening voltage applied to the PIN semiconductor detector in real time.
And S3, determining the working temperature of the current PIN semiconductor detector according to the corresponding relation between the working temperature of the PIN semiconductor detector and the forward starting voltage, and calculating and determining the magnitude of the reverse dark current of the current PIN semiconductor detector.
Reverse dark current during operation of PIN semiconductor radiation detectorThe relation to the real-time operating temperature is calculated by:
Wherein: for the n-region diffusion coefficient of the PIN semiconductor detector, The p-region diffusion coefficient of the PIN semiconductor detector; for the n-region diffusion length of the PIN semiconductor detector, The p-region diffusion length of the PIN semiconductor detector; Acceptor doping concentrations for the PIN semiconductor detector, Donor doping concentration for PIN semiconductor detector.
And S4, calibrating the signal current of the PIN semiconductor detector according to the calculated reverse dark current.
The self-calibration measurement method of the PIN semiconductor detector starting voltage is realized based on a measurement system, as shown in FIG. 2, and the measurement system comprises:
The PIN semiconductor detector 1 is of a P-I-N junction diode structure, and a signal PIN of the PIN semiconductor detector 1 is communicated with a driving system;
the driving system provides forward and reverse working voltages of the PIN semiconductor detector and detects the working voltage and the uncalibrated signal current of the PIN semiconductor detector;
The processor 2 is used for calculating the working temperature and the working reverse dark current of the PIN semiconductor detector 1 in real time, calibrating and outputting the signal current of the PIN semiconductor detector 1 according to the working reverse dark current in real time;
a first power supply 3 and a second power supply 4 with opposite directions for supplying power, a current measuring device 5 for measuring current, and a voltage measuring device 6 for measuring voltage.
Claims (5)
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| SU1603314A1 (en) * | 1988-05-24 | 1990-10-30 | Специальное конструкторско-технологическое бюро с экспериментальным производством Института ядерных исследований АН УССР | Dosimeter of ionizing radiation |
| CN114877816A (en) * | 2022-05-10 | 2022-08-09 | 湘潭大学 | Method for measuring thickness and uniformity of scintillator film applied to IPEM system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0540064A (en) * | 1991-08-06 | 1993-02-19 | Mitsuteru Kimura | Schottky junction temperature sensor |
| JP4539011B2 (en) * | 2002-02-20 | 2010-09-08 | 富士電機システムズ株式会社 | Semiconductor device |
| US8198595B2 (en) * | 2010-04-22 | 2012-06-12 | Fr. Oleg Uryupin | Personal dosimeter on the base of radiation integrated circuit |
| CN104620391B (en) * | 2012-10-23 | 2017-09-19 | 富士电机株式会社 | Semiconductor device and manufacturing method thereof |
| WO2016059503A1 (en) * | 2014-10-17 | 2016-04-21 | Landauer, Inc. | Mos capacitor-based, accumulating, radiation-sensitive detector for occupational, environmental and medical dosimetry |
| EP3764637B1 (en) * | 2019-07-11 | 2023-08-02 | Teledyne Dalsa B.V. | Image sensor and imaging system comprising the same |
| CN115276658B (en) * | 2022-07-07 | 2025-06-27 | 兰州科近泰基新技术有限责任公司 | Charge frequency conversion circuit, conversion method and particle therapy dose monitoring device |
| CN115563847A (en) * | 2022-11-11 | 2023-01-03 | 哈尔滨工业大学 | Simulation method for determining single event effect |
| CN117892672A (en) * | 2024-01-29 | 2024-04-16 | 中国科学技术大学 | Modeling method and device for gallium oxide Schottky diode and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| SU1603314A1 (en) * | 1988-05-24 | 1990-10-30 | Специальное конструкторско-технологическое бюро с экспериментальным производством Института ядерных исследований АН УССР | Dosimeter of ionizing radiation |
| CN114877816A (en) * | 2022-05-10 | 2022-08-09 | 湘潭大学 | Method for measuring thickness and uniformity of scintillator film applied to IPEM system |
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