CN118685759A - Apparatus for depositing layers on multiple substrates simultaneously - Google Patents

Abstract

The invention relates to a method for simultaneously depositing layers on a plurality of substrates (1), wherein a first gas flow (Q1) provided by a gas inlet (3) is mixed into a supplementary gas flow (QE) in a treatment chamber (2) of a CVD reaction chamber, and the supplementary gas flow (QE) flows from a gas outlet opening (6) into the treatment chamber (2). The supplementary gas flow (QE) consists of a second gas flow (Q2) and a third gas flow (Q3) in the feed volume (14), which third gas flow is fed into the volume (14) via the inflow opening (16) spatially adjacent to the gas outflow opening (6). A gas outlet opening (6) is spatially assigned to each of the plurality of support locations (4), through which an individually adjustable supplementary gas flow (QE) can flow through the substrate (1).

Description

Apparatus for depositing layers on multiple substrates simultaneously

Technical Field

The present invention relates to a method for depositing layers on multiple substrates simultaneously, wherein a first gas flow is fed into the process chamber by a gas inlet mechanism arranged in the process chamber of a CVD reactor, wherein one or more support positions for carrying the substrate are arranged downstream of the gas inlet mechanism, and the first gas flow flows through the support positions along a first flow direction, wherein an inlet portion with a gas outflow opening is correspondingly provided for each support position, and the gas outflow opening is arranged between the gas inlet mechanism and the support position in a specified position relative to the support position, wherein a supplementary gas flow that affects layer composition, layer growth or dopant incorporation is fed into the process chamber through a gas outflow channel, the gas outflow channel flows into the process chamber through the gas outflow opening, the supplementary gas flow flows through at least a selected area corresponding to the support position assigned to the supplementary gas flow, and the composition of the supplementary gas flow is individually adjusted for each support position by means of a mass flow controller.

The present invention also relates to a device for depositing layers on multiple substrates simultaneously, the device having an inlet mechanism arranged in a processing chamber of a CVD reactor, the inlet mechanism being used to allow a first gas flow to flow out into the processing chamber, the device also having multiple supporting positions for respectively accommodating at least one substrate, the supporting positions being respectively arranged downstream of the inlet mechanism along a first flow direction of the first gas flow, wherein each supporting position is correspondingly provided with a gas outflow channel, the gas outflow channel leading into the processing chamber through a gas outflow opening, the gas outflow opening being arranged between the inlet mechanism and the supporting position at a prescribed position relative to the supporting position, wherein a supplementary gas flow that affects layer composition, layer growth or dopant doping amount is fed into the processing chamber through an inlet portion of the gas outflow opening, and the composition of the supplementary gas flow can be adjusted individually for each supporting position by means of a mass flow controller.

Background Art

DE 10 2018 124 957 A1 describes such a device. In addition to a gas inlet mechanism for feeding a first gas flow, the device also has a further gas outflow opening, which is arranged in the base between the gas inlet mechanism and the support position. A second gas flow that can be adjusted independently of the first gas flow is fed into the process chamber through the gas outflow opening. The second gas flow contains a purge gas and is mainly used to dilute the first gas flow. Gas outflow channels lead to each gas outflow opening respectively, wherein a separate supply line is guided through the base to each gas outflow opening.

Since the second gas stream is fed in through the gas outflow openings formed by the susceptor, this results in an uncontrolled diffusion of the second gas stream below the cover element. In order to change the position of the gas outflow openings relative to the support point, it is necessary to replace the entire susceptor. Furthermore, since the separate gas feed lines lead into the respective gas outflow openings, it is difficult to feed the second gas stream uniformly into the reaction chamber.

DE 10 2021 103 245 A1 discloses an annular body arranged around an air inlet element, which is located on a support between the air inlet element and a support point carrying a substrate and prevents the formation of parasitic deposits in the region between the air inlet element and the substrate.

Summary of the invention

The object of the present invention is to improve one of the above-mentioned devices of the type described in the invention in an advantageous manner with regard to use and to expand its field of application, in particular for the targeted local influencing of the layer composition and dopant concentration of a layer deposited on a substrate.

This object is achieved by a method for simultaneously depositing a layer on a plurality of substrates and a device for simultaneously depositing a layer on a plurality of substrates, wherein the dependent claims also represent independent solutions to this object.

According to the present invention, a second gas flow is fed into the chamber. The chamber has a plurality of gas outflow openings that lead into the process chamber. The second gas flow fed into the chamber should be distributed to each gas outflow opening. At least one gas outflow opening can be individually and locally assigned to each support position. The gas outflow opening can be located between the gas outflow surface of the gas inlet mechanism and the support position, and the support position can support one or more substrates. The second gas flow can contain a carrier gas. However, the second gas flow preferably contains a reactive gas that affects the layer composition, layer growth or dopant incorporation amount. When depositing a III-V semiconductor layer on a substrate, such as a III-V semiconductor substrate, the reactive gas can be a hydride of a V main group element, and another reactive gas can be an organic metal compound of a III main group element. When depositing a IV-IV semiconductor layer, the reactive gas can be silane, disilane, methane or ethane. It is also feasible to use a germanium compound as a reactive gas. II-VI compounds can also be deposited. Another reactive gas may have a dopant, through which the semiconductor layer, in particular the epitaxially deposited semiconductor layer, is doped. The second gas flow can be evenly distributed to a plurality of gas outflow openings. In addition, it can be provided that an input pipeline leads to a common cavity, through which a third gas flow is fed into the common cavity. The second gas flow is evenly distributed, and the inlet opening for feeding the third gas flow corresponds to the gas outflow opening in space. In particular, it is provided that an inlet opening is spatially arranged adjacent to each gas outflow opening that is functionally and/or spatially corresponding to a supporting position, and through which the third gas flow that can be individually adjusted is fed into the second gas flow after distribution, so that the second gas flow after distribution is mixed with the third gas flow into a supplementary gas flow that can be individually adjusted, and the supplementary gas flow flows into the processing chamber through the gas outflow opening. This arrangement makes it possible to mix a supplementary gas flow into the first gas flow, which supplementary gas flow can be adjusted individually for each support position, so that the growth and/or dopant incorporation can be corrected individually for each support position, preferably individually, so that deviations between the support positions of the layer thickness or doping concentration of layers deposited on different substrates at different support positions can be compensated. For example, it is possible to measure layer properties, such as the current layer thickness or dopant incorporation, by sensors when depositing layers on substrates located at different support positions. If the test device of the control device determines that there are deviations in the layer thickness or dopant incorporation of layers deposited on substrates located at different support positions, the third gas flow can be changed by individually changing the composition or amount of the third gas flow and thus the deposition process can be correctively intervened in order to change the growth rate or the dopant incorporation.

In the method according to the present invention, a base that can be driven to rotate around an axis of rotation is preferably used. The base is supported by a rotating shaft body, which has an input pipeline for inputting a second gas flow and a plurality of third gas flows. A gas mixing system is provided, which has a gas source and a mass flow regulator for adjusting a first gas flow, and the first gas flow is fed into the processing chamber in the form of a uniform gas flow from the gas outflow surface of the gas inlet mechanism. The first gas flow preferably contains a reactive gas for the deposition of a production layer, especially a silicon carbide layer. The first gas flow may also contain a dopant, such as a nitrogen compound. The second gas flow may contain one or more of these reactive gases. However, if, for example, GaInAsP or a similar substance is to be deposited, the second gas flow may also contain only dopants or other reactive gases that are not present in the first gas flow, such as other elements arranged in the layer. However, it is also feasible that the second gas flow contains only a carrier gas.

The third gas flow with a unique composition for each support position can be only a diluent gas, by which the second gas flow containing at least one reactive gas can be locally diluted. However, the third gas flow can also contain reactive gases, by which the layer growth or the dopant incorporation is locally influenced. Each of the input lines for the third gas flow, in particular corresponding to the number of support positions, can have a mass flow controller that can be controlled individually by the control device. The mass flow controller can, for example, be part of a closed-loop control circuit, the actual value of which can be measured by the above-mentioned sensor. Alternatively, the second gas flow can also be a diluent gas or contain a diluent gas, and the third gas flow can contain a reactive gas.

In particular, it is provided that the base has an opening at its center. The opening may have a wall extending around the center on an arc line. The wall may define a common cavity. The common cavity may be defined upward by a gas outflow element, which is a plate located on the base, in particular a plate located on an edge region of the wall surrounding the opening of the base. The common cavity may be defined downward by a rotating shaft body or other plates. The plate, the rotating shaft body or the flange of the rotating shaft body may have an access portion for feeding an inflow opening of a third gas stream. The feed opening for feeding the second gas stream is preferably located in the middle (or center) of the lower plate or the middle of the rotating shaft body, or at least spatially adjacent to the middle.

The invention further proposes that the position of the gas outflow opening can be adjusted relative to the support position. For this purpose, a gas outflow element is provided, which forms a gas outflow opening, through which the second gas flow or the supplementary gas flow is fed into the process chamber and can reach different positions relative to the support position.

In one embodiment, a plurality of supporting positions formed by a susceptor can be provided, as described in DE 10 2018124 957A1, which are arranged around the center of the susceptor at a fixed spacing angle, and the gas inlet mechanism is located in the center. A uniform laminar first gas flow can flow out from the gas inlet mechanism, and the first gas flow may contain a dopant or may not contain a dopant. The first gas flow flows through the processing chamber in this way, so that a layer, such as a silicon carbide layer, can be deposited on the substrate. In a first embodiment, the device according to the present invention is provided with a body, such as a ring or a disk, which can rotate around the center rotationally symmetrically. The body has a gas outflow opening, which is arranged relative to each other at the same spacing angle as the supporting position. One or more gas outflow openings can be respectively provided at the supporting position. The change in the rotational position of the gas outflow element relative to the susceptor leads to different values of the offset angle between the center line passing through the center of the supporting position and extending through the center in the flow direction and the flow line passing through the gas outflow opening and extending through the center. The angle can be selected here so that the second gas flow flows through a local surface of the substrate. However, the second gas flow can also flow past the substrate. If, for example, the gas outflow opening is arranged on the center line, the gas flow flows through the center of the substrate. The second gas flow can contain an inert gas, but it can also contain a gas that has an influence on the layer composition or doping concentration of the layer deposited on the substrate. Thus, a gas flow is formed along a flow line passing through the gas outflow opening and the center of the substrate, in which, for example, the concentration of the dopant is different from the adjacent first gas flow fed through the gas inlet mechanism. If the gas outflow element is in the following rotational position, in which the gas outflow opening is arranged offset relative to the center line, the dopant incorporation amount in the region of the layer spaced apart from the center of the substrate changes. In this way, the composition in the layer, in particular the doping amount of the dopant, can be locally influenced.

The diameters of the gas outflow openings can be of the same or different sizes. The smaller the diameter of the gas outflow openings, the more precisely the composition of the layer can be controlled. Combinations of gas outflow openings with the same or different diameters can also be used as a means for influencing the mass flow of the second gas flow or the supplementary gas flow. The combination of gas outflow openings defines the shape and size of the area of the substrate that is influenced by the second gas flow.

The gas outflow element can be fixed in a specified rotational position of the base by means of an index element. The gas outflow element can be fixed on the base, but can also be fixed on other components in the process chamber, such as the gas inlet head. The gas outflow element can be fixedly located in a recess on the upper side of the base.

It can be stipulated/set that the indicating element is formed by the edge of the gas outflow element extending on the arc line. The indicating elements are spaced apart from each other at a fixed indicating angle along the circumference. The angle is generated by the sum or difference of a single or multiple times of the spacing angle and the adjustment angle, for example, the spacing angle is 40° and the adjustment angle is 1°. As a result, different azimuths or offset angles of the gas outflow opening relative to the corresponding supporting positions are generated for each rotational position. The indicating element can be one or more recesses, which are engaged with one or more protrusions formed by the system. However, the indicating element can also be one or more protrusions, which are engaged in one or more recesses formed by the base. As described in DE 10 2021 103 245A1, in a fixed position, the gas outflow element forming the gas outflow opening can rotate with the base around the inlet mechanism arranged at the center of the base. The base can be supported by a rotating shaft body driven by rotation. The gas outflow element can form a tension disk (Zugteller) arranged rotationally symmetrically around the center of the base. The cover plate and the gas outflow element can be connected to each other in a rotationally fixed manner. The cover plate can be designed to be adapted to the shape of the gas outflow element and can also have gas outflow openings, the number and diameter of which are consistent with the number and diameter of the gas outflow openings of the gas outflow element and arranged at the same spacing angle. In the inserted state, the gas outflow opening of the cover plate is precisely located above the gas outflow opening of the gas outflow element. As described in DE 102021 103 245 A1, the gas outflow element is connected to a tie rod centrally arranged in the rotating shaft body in a rotationally fixed manner. In order to change the rotational position of the gas outflow element, the tie rod must be loosened.

The gas outflow element can have a central depression into which the gas inlet member can protrude. The inner diameter of the gas outflow element is larger than the outer diameter of the gas outlet member.

As already disclosed in DE 10 2018 124 957 A1 and DE 10 2021 103 245 A1, the support location can be formed by a substrate holder which is driven in rotation by a purge gas, in particular an inert gas. The support location can be surrounded by a covering element as described in DE 10 2021 103 245 A1, which covers one surface of the susceptor. A one-piece or multi-piece covering element can surround the gas outflow element. The inner diameter of these covering elements is greater than the outer diameter of the gas outflow element.

The gas outflow channel can be respectively connected to the gas outflow opening. The gas outflow channel can be a hole, such as a circular hole, in the gas outflow element and has a specified outflow angle. The outflow angle measured along the flow direction affects the action position of the second gas flow. The outlet angle can have a component transverse to the flow direction, but can also have a component along the flow direction. The outflow angle between the outflow axis of the gas outflow channel and the plane in which the first gas flow flows can be less than 90°, in particular between 80° and 20°. The outflow angles of all outflow channels can be the same or different. The outflow angle can be between 30° and 50°, and can be 40°.

The invention further relates to a gas distribution chamber, in particular arranged in the region of a base, which is connected to a plurality of gas outflow openings. The gas outflow openings open into the process chamber and are in particular arranged in the above-described manner. The common gas distribution chamber is supplied by at least one common gas input device. The individual gas outflow openings can be spaced identically from the center of the gas distribution chamber. A common input section can be provided in the center of the gas distribution chamber, through which a second gas flow is fed into the gas distribution chamber, thereby forming a flow with rotational symmetry in the gas distribution chamber, so that the gas flows flowing through each gas outflow opening are substantially identical.

The gas outflow channel can thus be connected to the common gas distribution chamber flow to ensure uniform gas feeding in all channels. The chamber can be formed by a rotating shaft body and supplied by at least one common gas input device. The common input part preferably extends in the center of the rotating shaft body or passes into the center of the gas distribution chamber. However, gases from different sources can also be fed in through separate input pipelines. The input of gas can be achieved by the rotating shaft body. According to the present invention, it can be provided that other gas inflow openings are correspondingly assigned to some gas outflow openings or all gas inflow openings. These other gas inflow openings can be located in the flow path from the common input part to the gas outflow opening. If, for example, there is a radial distance between the gas outflow opening and the center, the other gas inflow openings can be located on the radial line between the center and the gas outflow opening. Therefore, it is preferred to provide other gas inflow openings, which are arranged around the center of the gas distribution chamber with uniform angle distribution and are especially arranged around the common input part of the center. It is preferably provided that reactive gases, such as dopants, are fed in through these gas inflow openings, and these gases are mixed with the second gas flow. The second gas flow can be composed of a diluent gas, such as an inert gas. However, it is also provided that these gas inflow openings form a dilution gas inflow opening so as to dilute the gas flow of the second gas separately in all gas inflow channels. The gas inflow opening leading into the gas distribution chamber is arranged between the gas outflow opening and the input portion of the second gas flow along the flow direction. The gas distribution chamber can be defined by a wall extending along the inner surface of a hollow cylinder. The gas outflow opening can be arranged in a covering wall extending transversely to the wall. The covering wall is preferably formed by a plate, and the plate closes the opening of the base. The plate can be a tension plate, through which the base can be loaded with an axial tension to limit the base to the rotating shaft body. The boundary surface opposite to the covering surface can be formed by the upper end face of the rotating shaft body. The flow velocity of the third gas flow can be adjusted so that the gas directly flows into the gas outflow channel corresponding to each other after being fed into the chamber. The gas is diluted by a part of the second gas flow here, and this part of the second gas flow can be formed by the dilution gas. The gas outflow opening leading into the processing chamber can be flush with the inflow opening for feeding the third gas flow. In this arrangement, it can be provided that the inlet of the gas inflow opening is located in the top region of the protrusion, which can have a conical, truncated cone or pyramidal shape. However, the protrusion can also be another protrusion, for example, a protrusion in the shape of an elongated strip along the circumference of the center of the air inlet mechanism. In addition, it can be provided that the protrusion protrudes into the recessed portion of the gas outflow element. The recessed portion can be funnel-shaped. The gas outflow channel leading into the gas outflow opening can originate at the lowest point of the recessed portion. The opening can also be elongated along the circumference, which realizes the relative rotation of the gas outflow element. However, in another design, only one recessed portion can be arranged in the upwardly directed surface of the support flange or in another surface of the cavity. However, the recessed portion can also be arranged on the bottom side of the gas outflow element. The inlet opening for feeding the third gas flow can lead into the bottom of the recess, or the gas outflow channel can originate from the bottom of the recess, and the gas outflow channel leads into the process chamber when the gas outflow opening is formed. These recesses can be longer in the circumferential direction than in the radial direction, and the circumferential and radial directions are the circumferential and radial directions relative to the rotating axis of the gas outflow element. There are valves and mass flow regulators in the input pipeline, through which the gas flow can be adjusted by the control device. The control device can have a programmable control computer for this purpose, which can process the scheme stored in the control device, and the scheme contains the values of the gas flow and other process parameters.

The gas outflow element can be made of ceramic, graphite or quartz.

BRIEF DESCRIPTION OF THE DRAWINGS

Several embodiments of the present invention are shown in the drawings and are explained in detail below. In the drawings:

FIG1 schematically shows a cross section of a CVD reactor;

FIG2 shows a partial area marked with II in FIG1 of the first embodiment;

FIG3 shows a top view of the base 5 of the first embodiment along the sectional plane III-III;

FIG4 shows a partial area marked with IV in FIG3 of the first embodiment;

5 shows a view according to FIG. 4 , in which the gas outflow opening 6 is in azimuthal positions corresponding to different rotational positions of the gas outflow element relative to the correspondingly assigned bearing position 4 ;

FIG. 6 shows a view according to FIG. 5 of a second exemplary embodiment, in which two gas outflow openings 6 , 6 ′ having different diameters d, d′ are assigned to the bearing position 4 ;

FIG7 schematically shows a cross section through a CVD reactor according to FIG1 of a third embodiment, wherein a gas outflow element 7 is connected to a tie rod;

FIG8 shows a diagram corresponding to FIG2 of a third embodiment;

FIG9 shows a cross-sectional view taken along line IX-IX in FIG8 ;

FIG10 shows an enlarged partial area of FIG9 ;

FIG. 11 shows a diagram corresponding to FIG. 10 of another embodiment;

FIG. 12 shows an enlarged view of a local area XII in FIG. 11 ;

FIG13 shows a cross-sectional view taken along the cutting line XIII-XIII in FIG12;

FIG. 14 shows a view according to FIG. 13 of another embodiment in a first position of the gas outflow element 7 relative to the support flange 32;

FIG. 15 shows the view according to FIG. 14 , but with the gas outflow element 7 rotated relative to the supporting flange 32 ;

FIG. 16 shows a view according to FIG. 13 of another embodiment in a first position of the gas outflow element 7 relative to the support flange 32;

FIG. 17 shows the view according to FIG. 16 , but with the gas outflow element 7 translated relative to the support flange 32 ; and

FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 17 .

DETAILED DESCRIPTION

FIG. 1 shows a CVD reactor having a housing 23 , which is part of a coating device having a control device and a gas supply system (not shown).

The CVD reactor shown in FIG. 1 comprises a susceptor 5 which extends rotationally symmetrically in a horizontal plane around a gas inlet device 3 which protrudes through a process chamber ceiling 19. The susceptor 5 can be heated to a process temperature of more than 1500° C. by means of a heating device 26 arranged below the susceptor 5. It is provided that reactive gases and inert gases, for example gases containing carbon, silicon and nitrogen and hydrogen, can be fed into the process chamber 2 by means of the gas inlet device 3. Supply lines 27, 28 of these gases connected to the corresponding sources 15″, 29 lead into the gas inlet device 3. The gas outflow surface of the exhaust device 3′ is porous or has a plurality of uniformly distributed and, in particular, equal-sized openings, through which a gas mixture of specified gases is fed into the process chamber 2. The embodiment shown in FIG. 1 has a single gas inflow region, through which a uniform mixture of gases flows into the process chamber 2 in a laminar manner. However, a plurality of gas inflow regions can also be arranged vertically one above the other, through which the gas mixture flows into the process chamber 2 while forming a uniform laminar flow.

Arranged opposite the gas inlet device 3 is a gas outlet device 18, through which the process gas or decomposition products of the process gas fed into the process chamber 2 via the gas inlet device 3 can be conveyed out of the process chamber 2. This is achieved by means of a pump (not shown) which can generate a negative pressure in the process chamber 2.

1 , the first gas flow Q1 fed in through the gas inlet device 3 flows radially outward along the flow direction S1 from the center C located inside the gas inlet device 3 through the support position 4 configured downstream of the susceptor 5, which supports the substrate 1. The gas outflow surface 3 'corresponds to a cylindrical surface that extends from the bottom of the process chamber 2 formed by the susceptor 5 to the process chamber ceiling 19.

The first gas flow Q1 is provided by gas sources 15 ″, 29 and fed into the gas inlet element 3 via supply lines 27 , 28 . A mass flow controller 20 ″ is located in the supply lines 27 , 28 .

The gas outflow element 7 is arranged in a region extending downstream of the gas inlet device 3 and upstream of the support position 4 or the substrate 1. In the embodiment shown in the figure, the gas outflow element 7 is a body, such as a ring or a disk, which can be arranged rotationally symmetrically around the center C. The gas outflow element 7 forms gas outflow openings 6, 6' respectively assigned to the support position 4, through which the second gas flow can be fed into the process chamber 2 along the flow direction S2.

In the first embodiment, as shown in FIG3 , a plurality of support positions 4 formed by the base 5 are arranged annularly around the center C at a fixed spacing angle α relative to each other. The gas outflow openings 6 and 6' are arranged on the gas outflow element 7 at the same spacing angle α relative to each other. As shown in FIG2 , the gas outflow channel 11 formed by the gas outflow element 7 respectively leads to the gas outflow openings 6 and 6'. The gas outflow channel 11 has a specified outflow angle δ. The outflow angle is defined as the angle between the outflow axis A and the plane parallel to the flow direction S1 of the first gas flow Q1. In the first embodiment, the outlet angle δ is 90°. The input of the second gas flow Q2 provided by the source 30 is realized by the rotating shaft body 13. The second gas flow Q2 is fed into the volume 14 formed by the rotating shaft body 13 through the gas inflow opening 21. Additional gas is uniformly fed into the gas outflow channel 11 from here. In addition, the gas outflow openings 6 and 6' can be respectively provided with an inflow opening 16 upstream.

An input line 20 extending through the rotating shaft body 13 leads to each inflow opening 16, and a second gas flow Q2 of a gas from a source 15 is fed into the chamber 14 through the input line 20. The feeding of the gas is achieved as follows, so that the gas first flows from the inflow opening 16 into the chamber 14, and then flows into the gas outflow channel 11 corresponding to each inflow opening 16.

In the supply lines 12 , 22 , 27 , 28 of the gas supply system there are mass flow controllers 20 , 20 ′ and valves (not shown), by means of which the gas flow can be regulated.

The gas outflow element 7 can be fixed on the base 5 in different rotational positions. In the embodiment shown in FIG. 3 , the gas outflow element 7 has indicator elements 8, 8', 8", 8'" for this purpose, which are spaced apart from each other by an indicator angle γ in the circumferential direction. One of the indicator elements 8, 8', 8", 8'" configured as recesses engages with a projection 24 formed by the base 5, thereby fixing the gas outflow element 7 to the base 5 in a rotationally fixed manner. When the spacing angle α is, for example, 40°, the indicator angle can be 41° or 39°.

In the embodiment of FIG. 3 , which is shown enlarged in FIG. 4 , the individual gas outlet openings 6 ′ are arranged offset by an offset angle β between a center line 10 extending through the midpoint M of the support position 4 and through the center C and flow lines 9, 9 ′, 9 ″, 9 ″′ extending through the gas outlet openings 6 , 6 ′ and the center C. The second gas flow flowing out of the gas outlet opening 6 flows along the flow lines 9, 9 ′, 9 ″, 9 ″′ along the flow direction S2. The offset angle β can have different values depending on the rotational position of the gas outflow element 7, whereby the offset flow lines 9, 9 ′, 9 ″, 9 ″′ relative to the center line 10 change position as shown in FIG. 5 , and thereby the radial position of the second gas flow relative to the center point M of the substrate 1 changes. The offset angle β can, for example, be changed in steps of 1°.

6 , two gas outflow openings 6, 6' with different diameters d, d' are assigned to each support point 4. The gas outflow openings 6, 6' are offset at an angle β, β' relative to the center line 10, so that the flow lines 9, 9', 9", 9'" extend past the substrate 1. The second gas flow is directed past the substrate in a targeted manner, so that the gas contained in the second gas flow, for example a gas containing a dopant, acts only in the edge region of the substrate 1.

The angle β may be the same as the angle β'. However, β' may also be different from β.

7 , the tie rod 25 connected to the gas outflow element 7 is centrally guided through the rotating shaft body 13. A tensile force is applied to the gas outflow element 7 by the tie rod 25 so as to load the radially inner step of the base 5 onto the radially protruding flange of the rotating shaft body 13.

In the above-mentioned embodiment, in particular in the embodiment shown in FIG. 7 , different gas mixtures are fed into the chamber 14 through a plurality of gas inlet openings 16. Different gases, i.e. gases of different compounds, can be fed into the chamber 14 through the input line 22, but the gases flowing through different input lines 22 can also be different from each other in terms of their mass flow. Therefore, the gas source 15 'can be a different gas source. It is also possible to adjust the mass flow regulator 20 'to form a unique mass flow. This has the advantage that each supporting position of the substrate obtains a unique gas mixture. The gas fed through the input line 22 is especially a dopant. For example, if silicon carbide is deposited on the substrate, the doping gas can be nitrogen or a nitrogen compound. The dopant is guided through the input line 22 together with a carrier gas, preferably hydrogen.

However, in other applications, the gas entering the volume chamber 14 through the supply line 22 may also be a metal organic compound or a hydride, such as TMInTMGa, TMAl or AsH ₃ or PH ₃ or NH ₃ .

In an embodiment not shown, the chamber 14 can also be divided. The chamber can be divided into a plurality of chambers arranged adjacent to each other along the circumference, for example. Each chamber can have an independent gas inlet opening 21, which is also connected to the input portion 12. The inlet of the gas inlet opening 21 can also be located at the center of the chamber 14.

The embodiments shown in FIGS. 8 to 10 correspond substantially to the embodiment shown in FIG. 3 . The rotating shaft body 13 can be rotationally driven by a rotation drive device (not shown), and the rotating shaft body has a cylindrical lower section, in the wall of which the input pipeline 22 for the third gas flow is located. The area of the cavity 14 is located in the cavity of the rotating shaft body 13. The rotating shaft body 13 has a support flange 32 protruding radially outward, and the area of the base 5 surrounding the circular opening 35 is placed on the radially outer edge of the support flange 32. The inner wall 36 of the edge of the opening 35 of the base 5 defines the cavity 14 in the radially outward direction.

The sections of the feed lines 33 formed by radial holes extend in the horizontal direction in the support flange 32. Gas inlet openings 16 originate from these feed lines 33 respectively, through which the individually adjustable third gas flow Q3 is fed into the chamber 14. Each gas inlet opening 16 has the same radial distance from the center C of the base 5, which is smaller than the radial distance of the edge 36 of the opening 35.

The cavity 14 is closed upwardly by a plate 7, which can also be a tension plate. The plate 7 can have the same characteristics as described in connection with the other embodiments above. The plate 7 abuts against a cover plate 31 in a radially outward direction, which is placed on the upper side of the base 5 pointing upwards.

The plate 7 has a gas outflow opening 6 at a radial distance from the center C. The radial distance may be the same radial distance as the radial distance of the gas inflow opening 16 to the center C. It may be provided that each gas outflow opening 6 is arranged immediately above the inflow opening 16 correspondingly assigned thereto, so that the third gas flow Q3 flowing out of the inflow opening 16 enters the gas outflow channel 11 via the shortest path, and the gas outflow channel leads into the process chamber 2 when the gas outflow opening 6 is formed.

However, each third gas flow Q3 can also be divided into a plurality of partial flows, wherein the partial flows, as shown in FIG. 6 for example, pass into the process chamber 2 through mutually different gas outflow openings 6 , 6 ′ which are each assigned only to one support point 4 .

The supply line 12 is supplied by a gas source 30 schematically shown in Figures 1 and 7. The second gas flow Q2 flowing out of the gas inlet opening 21 is regulated by means of a mass flow controller 20'.

A sensor 34, in particular an optical sensor 34, is provided, which can measure the current layer thickness of the layer deposited on the substrate 1 or its dopant concentration or layer composition. The sensor 34 cooperates with the control device 37, and the sensor controls the mass flow controllers 20", 20' and 20. The mass flow controller 20 can provide a dilution gas or a reactive gas, and the growth, layer composition or dopant addition amount of the layer deposited on the substrate arranged at different supporting positions 4 can be individually changed by the dilution gas or the reactive gas. The control device 37 has a closed-loop controller, by which the gas composition of the third gas flow individually corresponding to the different supporting positions 4 can be changed, so that the deviation between the layer thickness, layer composition or dopant addition amount in the layer is minimized.

The embodiment shown in FIGS. 11 to 13 corresponds essentially to the embodiment shown in FIG. 10 . The projection 42 originates from the upwardly directed face of the support flange 32 of the rotation axis body 13 . The projection 42 is conical here. A gas channel extends through the projection 42 , which ends in the form of an inflow opening 16 through which the third gas flow Q3 can flow. The third gas flow contains a reactive gas which influences the layer composition or the doping amount in the layer.

The protrusion 42 extends into a recess 41 which is arranged in the bottom side of the gas outflow element 7. In the embodiment described, the recess 41 is funnel-shaped so that a gap 40 is formed between the wall of the recess and the outer wall of the protrusion, through which the second gas flow Q2 can flow. A gap 43 extends between the bottom side of the gas outflow element 7 and the upper side of the support flange 32, through which the second gas flow Q2 can flow. In the embodiment described and in all other embodiments, the second gas flow Q2 can be a diluent gas, for example an inert gas. A gas outflow channel 11 originates at the top of the recess 41, which gas outflow channel opens into the process chamber 2 as a gas outflow opening 6.

The gas outflow element 7, together with the base 5 and the cover plate 31 placed on the base, forms a joint 44, through which a part of the gas flow Q2 can flow into the process chamber 2, because the joint 44 cannot be 100% tight technically. The second gas flow Q2, as an inert gas flow, forms a sealing gas flow to a certain extent, which prevents a large amount of reactive gas fed through the gas inlet opening 16 from flowing into the process chamber 2 in an uncontrolled manner.

In an embodiment not shown, the underside of the gas outflow element 7 has a projection shown in FIG. 13 , which then projects into a depression formed by the upper side of the support flange 32 .

The embodiment shown in FIGS. 14 and 15 differs from the embodiment shown in FIGS. 11 to 13 primarily in that no protrusion 42 projects into the recess 41 or (in an embodiment not shown) only a protrusion of smaller height and width projects into the recess. This enables the gas outflow element 7 to be moved in the circumferential direction relative to the support flange 32 or the base 5 or the cover plate 31, so that the azimuthal position of the gas outflow opening 6 relative to the substrate 1 or the support location 4 can be adjusted thereby. With reference to the center of the gas outflow element 7, the recess 41 can extend in the azimuthal direction longer than in the radial direction.

Another embodiment shown in Figures 16 to 18 differs from the embodiment shown in Figures 14 and 15 mainly in that the recessed portion 41 is not arranged on the bottom side of the gas outflow element 7, but is arranged on the upper side of the support flange 32. The channel through which the third gas flow Q3 flows forms an inflow opening 16, which opens into the bottom of the recessed portion 41. The inflow portion can be arranged in the middle of the bottom.

FIG. 18 shows that, with reference to the center C, the depression 41 has a greater extent in the azimuthal direction than in the radial direction.

With reference to the center of the gas outflow element 7 , the recess 41 shown in FIGS. 14 and 15 may also have a greater extension length in the azimuthal direction than in the radial direction.

The above embodiments are used to illustrate the invention generally included in the present application, which expands the prior art at least by the following feature combinations, respectively and independently, wherein two, more or all of these feature combinations can also be combined, namely:

A method, characterized in that gas outflow openings 6, 6' originate from a common cavity 14, a second gas flow Q2 is fed into the cavity through an input pipe 21, the second gas flow is distributed to a plurality of gas outflow channels 11, and a third gas flow Q3 that can be individually adjusted is fed into the cavity through a gas inflow opening 16 spatially adjacent to each gas outflow channel 11, wherein the third gas flow Q3 that can be adjusted by a regulator 20 is mixed with one of the distributed second gas flows Q2 to form a supplementary gas flow QE respectively.

A method is characterized in that the base 5 with the bearing point is driven in rotation about an axis of rotation located in its center C.

A method characterized in that the second gas flow Q2 is fed into the cavity 4 at or near the center C, and the gas outflow openings 6, 6' and the inlet openings 16 are arranged radially outside the center C in a regular circumferential distribution around the center C.

A method, characterized in that at least one of the second gas flow Q2 and the third gas flow Q3 contains a reactive gas that affects the layer composition, layer growth or dopant incorporation, and/or the second gas flow Q2 contains a reactive gas that affects the layer composition, layer growth or dopant incorporation and the third gas flow Q3 is a diluent gas, or the third gas flow (Q3) contains a reactive gas that affects the layer composition, layer growth or dopant incorporation and the second gas flow (Q2) is a diluent gas.

A method is characterized in that the third gas flow Q3 is provided by a mass flow controller 20 which is functionally assigned to each bearing point 4 and the second gas flow Q2 is provided by a further mass flow controller 20 ′.

A device, characterized in that gas outlet openings 6, 6' originate from a common cavity 14, a second gas flow Q2 can be fed into the cavity through an inlet portion of an input pipe 21, and the second gas flow is distributed to multiple gas outlet openings 6, 6', wherein an inlet opening 16 that is used to feed a third gas flow Q3 into the cavity 14 is spatially arranged adjacent to each gas outlet opening 6, 6' corresponding to a supporting position 4, so that the third gas flow Q3 fed through the inlet opening 16 is mixed with the distributed second gas flow Q2 to form a supplementary gas flow QE.

A device is characterized in that a bearing point 4 is arranged on a base 5 which is rotatably driven about a rotation axis arranged in the center C of the base 5 , wherein the air inlet element 3 is surrounded by the bearing point 4 .

An arrangement is characterized in that the gas outflow opening 6 is formed by a gas outflow element 7 which can be brought into different positions relative to the bearing point 4 .

A device, characterized in that a gas outflow opening 6 is correspondingly assigned to a gas outflow element 7 which is rotatably arranged around a center C of a base 5, wherein a plurality of support positions 4 are arranged around an inlet member 3 at a fixed spacing angle α relative to each other and the gas outflow openings 6 are arranged at the same spacing angle α.

A device is characterized in that each bearing point 4 is functionally and/or spatially assigned an inlet opening 16 to which a supply line 22 is assigned, into which a third gas flow Q3 can be fed by means of a mass flow controller 20 .

A device, characterized in that an input pipeline 21 is arranged in the middle of a rotationally symmetrical cavity 14, and the entry portion of a gas inlet opening 16 is arranged around the middle portion in a regular circumferential distribution, wherein the gas inlet opening 16 is arranged between the inlet opening of a gas outflow channel 11 and the entry portion of the input pipeline 21 relative to the flow direction of a second gas flow Q2 in the cavity 14.

All disclosed technical features (either by themselves or in combination in different ways) are important to the present invention. Therefore, the disclosure of the present application also includes all the contents disclosed in the relevant/attached priority document (copy of the prior application), and for this reason, the features of the priority document are also incorporated into the claims of the present application. Dependent claims can characterize unique and creative improvements to the prior art with their features even if they do not have the technical features of the cited claims, and are particularly useful for filing divisional applications based on the technical features. The invention given in each claim may additionally have one or more features that are particularly provided with figure numerals in the preceding description and/or given in the list of figure numerals. The present invention also relates to a variety of design methods, in which certain features mentioned in the above description are not implemented, especially when they are considered to be insignificant for the corresponding purpose of use or can be replaced by other means with the same technical effect.

Reference numerals list

1. Substrate

2 Processing room

3 Intake mechanism

3' Gas outflow surface

4 Support position

5. Base

6 Gas outflow opening

6' Gas Outlet Opening

7 Gas outflow element

8 Indicator elements

8' Indicator element

8" indicator element

8'" indicator element

9 Flow lines of the second gas flow

9' Flow line of the second gas stream

9" Flow line for the second gas stream

9'" Flow lines of the second gas stream

10 Centerline

11 Gas outflow channel

12. Input section for second gas flow

13 Rotating axis

14. Chamber

15 Gas Source

15' Gas Source

15" Gas Source

16 Enter the opening

17 Hoop

18 Exhaust mechanism

19 Processing chamber top

20 Mass flow controller

20' Mass Flow Controller

20" Mass Flow Regulator

21 Gas inflow opening for the second gas flow

22 Dilution gas input pipeline

23 Shell

24 Raised part

25 Tie rod

26 Heating device

27 Input pipeline

28 Input pipeline

29 Gas Source

30 Gas Source

31 Covering plate

32 Support flange

33 Input pipeline

34 Sensors

35 Opening

36 Inner wall

37 Control Device

40 Gap

41 Depression

42 raised part

43 Gap

44 Seams

a Distance

d Diameter of the gas outlet opening

d' Diameter of the gas outlet opening

A Outflow axis

C Center of base

M Center point of the bearing position

Q1 First gas flow

Q2 Second gas flow

Q3 Third gas flow

QE Make-up Gas Flow

S1 Flow direction of the first gas flow

S2 Flow direction of the second gas flow

α Pitch angle

β Deviation Angle

γ Indicator Angle

δ Outflow angle

Claims (16)

1. A method for depositing layers on a plurality of substrates (1) simultaneously, wherein a first gas flow (Q1) is fed into the process chamber (2) of a CVD reactor via a gas inlet device (3) arranged in the process chamber (2), wherein one or more support positions (4) for carrying the substrates are arranged downstream of the gas inlet device (3), the first gas flow (Q1) flows through the support positions along a first flow direction (S1), wherein a supplementary gas flow (QE) influencing the layer composition, layer growth or dopant incorporation amount is fed into the process chamber (2) via a gas outflow channel (11), the gas outflow channel leading into the process chamber (2) via a gas outflow opening (6, 6'), the supplementary gas flow flows through at least a selected area of the support position (4) assigned to the supplementary gas flow, and the composition of the supplementary gas flow is adjusted individually for each support position (4) by means of a mass flow controller (20), It is characterized in that the gas outflow openings (6, 6') originate from a common cavity (14), a second gas flow (Q2) is fed into the cavity through an input pipeline (21), the second gas flow is distributed to a plurality of gas outflow channels (11), and a third gas flow (Q3) that can be individually adjusted is fed into the cavity through a gas inflow opening (16) spatially adjacent to each gas outflow channel (11), wherein the third gas flow (Q3) that can be adjusted by a regulator (20) is mixed with one of the distributed second gas flows (Q2) to form a supplementary gas flow (QE) respectively. 2. The method according to claim 1, characterized in that a base (5) having a bearing point (4) is driven in rotation about an axis of rotation located in the center (C) of the base. 3. The method according to claim 2 is characterized in that the second gas flow (Q2) is fed into the cavity (4) at the center (C) or adjacent to the center (C), and the gas outlet opening (6, 6') and the inlet portion of the inlet opening (16) are arranged radially outside the center (C) in a regular circumferential distribution around the center (C). 4. The method according to claim 1, characterized in that at least one of the second gas flow (Q2) and the third gas flow (Q3) contains a reactive gas which influences the layer composition, the layer growth or the dopant incorporation. 5. The method according to claim 1, characterized in that the second gas flow (Q2) contains a reactive gas which influences the layer composition, layer growth or dopant incorporation and the third gas flow (Q3) is a diluent gas. 6. The method according to claim 1, characterized in that the third gas flow (Q3) contains a reactive gas which influences the layer composition, layer growth or dopant incorporation and the second gas flow (Q2) is a diluent gas. 7. The method according to claim 1, characterized in that the third gas flow (Q3) is provided by a mass flow controller (20) functionally assigned to each support point (4), and the second gas flow (Q2) is provided by another mass flow controller (20'). 8. A device for depositing layers on a plurality of substrates (1) simultaneously, the device comprising: A gas inlet mechanism (3) arranged in a process chamber (2) of a CVD reactor, the gas inlet mechanism being used to allow a first gas flow (Q1) to flow into the process chamber (2), a plurality of supporting positions for respectively accommodating at least one substrate (1), wherein the supporting positions are respectively arranged downstream of the gas inlet mechanism (3) along a first flow direction (S1) of the first gas flow (Q1), Each support position (4) is provided with a corresponding gas outflow channel (11), the gas outflow channel leads into the processing chamber (2) through a gas outflow opening (6, 6'), and the gas outflow opening is arranged between the gas inlet mechanism (3) and the support position (4) at a predetermined position relative to the support position (4). wherein a supplementary gas flow (QE) which influences the layer composition, layer growth or dopant incorporation is fed into the process chamber (1) via an inlet of a gas outflow opening (6, 6'), The composition of the supplementary gas flow can be adjusted individually for each support point (4) by means of a mass flow controller (20). Characterized in that the gas outflow openings (6, 6') originate from a common cavity (14), A second gas flow (Q2) can be fed into the chamber through an inlet of an inlet pipe (21), and the second gas flow is distributed to a plurality of gas outflow openings (6, 6'). An inlet opening (16) leading into the cavity (14) for feeding a third gas flow (Q3) into the cavity (14) is spatially arranged adjacent to each gas outlet opening (6, 6') correspondingly assigned to the support position (4), so that the third gas flow (Q3) fed through the inlet opening (16) is mixed with the distributed second gas flow (Q2) to form a supplementary gas flow (QE). 9. The device according to claim 8 is characterized in that the supporting position (4) is arranged on a base (5), and the base can be driven to rotate around a rotation axis arranged at the center (C) of the base (5), wherein the air intake mechanism (3) is surrounded by the supporting position (4). 10 . The device according to claim 8 , characterized in that the gas outflow opening ( 6 ) is formed by a gas outflow element ( 7 ) which can be brought into different positions relative to the bearing point ( 4 ). 11. The device according to claim 9 is characterized in that the gas outflow opening (6) is correspondingly assigned to a gas outflow element (7) which is rotatably arranged around the center (C) of the base (5), wherein a plurality of support positions (4) are arranged around the air inlet mechanism (3) at a fixed spacing angle (α) relative to each other and the gas outflow openings (6) are arranged at the same spacing angle (α). 12. The device according to claim 8 is characterized in that each supporting position (4) is functionally and/or spatially equipped with an inlet opening (16), and the inlet opening is equipped with an input pipeline (22) corresponding to the inlet opening, and the third gas flow (Q3) can be fed into the input pipeline by means of a mass flow controller (20). 13. The device according to claim 8 is characterized in that the input pipeline (21) is arranged in the middle of the rotationally symmetrical cavity (14), and the inlet portion of the inlet opening (16) is arranged around the middle portion in a regular circumferential distribution, wherein the inlet opening (16) is arranged between the inlet opening of the gas outflow channel (11) and the inlet portion of the input pipeline (21) relative to the flow direction of the second gas flow (Q2) in the cavity (14). 14. The device according to claim 8, characterized in that the opening of the inlet opening (16) is formed by a projection (42) or the gas outflow channel (11) originates from a projection. 15. The device according to claim 9, characterized in that the opening of the inflow opening (16) is located in the raised part (41), or the gas outflow channel (11) originates from the recessed part (41). 16 . The device according to claim 9 , characterized in that in the region of the gas outflow channel ( 11 ) and the gas inflow opening ( 16 ), a projection ( 42 ) engages in a depression ( 41 ).