Disclosure of Invention
The invention aims to provide a cluster focusing ultrasonic composite polishing method, which is used for realizing effective control of polishing uniformity of a large-size workpiece by a method that a cluster focusing ultrasonic device focuses on a polishing area in a purposeful manner, improving the phenomenon of uneven processing of different areas in a chemical mechanical polishing process, improving polishing efficiency and obtaining a better workpiece surface.
The invention further aims to provide a cluster focusing ultrasonic composite polishing device which is used for realizing the polishing method, has high processing efficiency and low cost, and the workpiece obtained after polishing has no surface and subsurface damage and is suitable for high-efficiency and ultra-smooth uniform polishing processing of optoelectronic/microelectronic substrates and optical elements.
To achieve the purpose, the invention adopts the following technical scheme:
A cluster focused ultrasound compound polishing method using a cluster ultrasound transduction mechanism, the cluster ultrasound transduction mechanism comprising a plurality of ultrasound transducers, the cluster focused ultrasound compound polishing method comprising the steps of:
A. adjusting the setting position of the workpiece to enable the polishing area of the workpiece to be propped against the polishing pad;
B. respectively adjusting the focusing angles and the powers of a plurality of ultrasonic transducers, focusing ultrasonic vibration through the ultrasonic transducers, transmitting the ultrasonic vibration outwards in an ultrasonic mode, and forming a plurality of focusing ultrasonic units in a polishing area of a workpiece, wherein the focusing ultrasonic units form a focusing ultrasonic area;
C. continuously adding polishing liquid between the workpiece and the polishing pad, and enabling the polishing liquid to submerge a polishing area of the workpiece;
D. and rotating the workpiece around the axis until the material of the polishing area of the workpiece is removed, wherein the polishing area of the workpiece is positioned in a range where the workpiece and the polishing pad relatively move.
Preferably, in the step B, the power of the ultrasonic transducer is 300-1000 khz.
Preferably, in the step C, the addition rate of the polishing solution is as follows:
0~2min:50~70ml/min;
>2min:10~15ml/min。
Preferably, the step a specifically further includes:
A. Adjusting the setting position of the workpiece 2 to enable the polishing area of the workpiece to be propped against the polishing pad, and adjusting the polishing pressure of the polishing area of the workpiece through the setting position of the workpiece;
The step D specifically further comprises the following steps:
D. The workpiece is rotated around the axis of the workpiece, the polishing pad is rotated around the axis of the workpiece, the axis of the workpiece is parallel to the axis of the polishing pad, and the rotation direction of the workpiece is opposite to the rotation direction of the polishing pad until the material in the polishing area of the workpiece is removed.
Preferably, the cluster ultrasonic transduction mechanism comprises a plurality of adjusting seats, the number of the ultrasonic transducers corresponds to the number of the adjusting seats, and one ultrasonic transducer is arranged on one adjusting seat;
the adjusting seat comprises a clamping assembly and an angle adjusting assembly, wherein the angle adjusting assembly is arranged at the bottom of the clamping assembly and is used for accommodating the ultrasonic transducer, and the angle adjusting assembly is used for adjusting the focusing angle of the ultrasonic transducer through the clamping assembly;
The clamping assembly comprises a mounting base, a clamping arm and an elastic piece; the ultrasonic transducer comprises a mounting base, a clamping arm, an elastic piece, a clamping arm, a mounting table, a connecting piece and a connecting piece, wherein the inner bottom of the mounting base is provided with the mounting table in a protruding mode, the mounting table is used for mounting the ultrasonic transducer, the clamping arm is hinged to two sides of the top edge of the mounting base in a swinging mode, and a hinge point of the clamping arm is positioned in the middle of the clamping arm;
A first adjusting point and a second adjusting point are respectively arranged on two sides of the bottom of the mounting base;
The angle adjusting assembly comprises a connecting rod, a push rod and a linear driver, wherein one end of the connecting rod is hinged with the first adjusting point, the other end of the connecting rod is relatively static with the linear driver, the push rod is vertically arranged, one end of the push rod is hinged with the second adjusting point, the other end of the push rod is connected with the output end of the linear driver, the push rod vertically moves relative to the linear driver, and the linear driver is used for driving the push rod to vertically move.
The cluster focusing ultrasonic composite polishing device is used for realizing the cluster focusing ultrasonic composite polishing method and comprises a cluster ultrasonic transduction mechanism and a first polishing mechanism;
the first polishing mechanism comprises a first working platform, a first polishing component, a supporting component and a first feeding component, wherein the first polishing component is rotatably installed on the top of the first working platform, the supporting component and the first feeding component are installed on the top of the first working platform, the supporting component is used for installing a workpiece, and the first feeding component is used for adding polishing liquid to the first polishing component;
The first polishing assembly comprises a first polishing base and a first polishing disk, wherein the first polishing disk is arranged at the top of the first polishing base in an erected mode, a mounting cavity is formed in the top of the first polishing base and is used for mounting the clustered ultrasonic transduction mechanism, a containing cavity is formed in the top of the first polishing disk and is used for containing a polishing pad and containing polishing liquid, and the first polishing assembly and the polishing pad are relatively static;
The support assembly comprises a support frame and a first workpiece disc, the support frame is mounted on the top of the first working platform, the first workpiece disc is mounted on the bottom of the support frame in a vertically movable mode, the first workpiece disc is located above the cluster ultrasonic transduction mechanism, the first workpiece disc can rotate around an axis of the first workpiece disc, and a workpiece is mounted on the bottom of the first workpiece disc.
Preferably, the rotation speed of the first polishing component is 10-50 rmp, and the rotation speed of the first workpiece disc is 50-150 rmp.
The cluster focusing ultrasonic composite polishing device is used for realizing the cluster focusing ultrasonic composite polishing method and comprises a cluster ultrasonic transduction mechanism and a second polishing mechanism;
The second polishing mechanism comprises a second working platform, a second polishing component and a second feeding component, wherein the second polishing component and the second feeding component are both arranged on the top of the second working platform, and the second feeding component is used for adding polishing liquid to the second polishing component;
The second polishing assembly comprises a rotary main shaft, a second polishing base, a second polishing disk, a sliding mounting rack and a second workpiece disk; the second polishing disc and the second polishing base are sleeved on the rotary main shaft in sequence from top to bottom, the second polishing disc and the second polishing base are relatively static, the rotary main shaft rotates relative to the second polishing disc and the second polishing base, the second polishing disc is used for containing a polishing pad and containing polishing liquid, and the second polishing disc and the polishing pad are relatively static;
the second workpiece disc is horizontally movably arranged at the top of the second polishing disc, moves up and down relative to the second polishing disc, and is arranged at the bottom of the second workpiece disc, the sliding mounting frame is meshed between the second polishing base and the rotating main shaft, the second workpiece disc is meshed between the second polishing disc and the rotating main shaft, the rotation of the rotating main shaft is used for simultaneously driving the sliding mounting frame and the second workpiece disc to coil the rotating main shaft to perform planetary wheel movement, the second workpiece disc is positioned above the sliding mounting frame, and the sliding mounting frame and the second workpiece disc are relatively static;
one the sliding mounting frame and one the second workpiece disc are one polishing unit, and the polishing units are provided with a plurality of polishing units.
Preferably, the rotation speed of the rotating main shaft is 10-100 rmp.
Preferably, the gear ratio of the rotary spindle to the second workpiece disc is 1:1.
The technical scheme provided by the invention can comprise the following beneficial effects:
1. On the basis of applying the focused ultrasonic technology to medical research, a cluster focused ultrasonic composite polishing method applied to polishing is provided, and the method adopts a non-invasive ultrasonic processing principle to focus ultrasonic waves on a polishing area of a workpiece, so that the processing process of the surface of the workpiece in the polishing process can be effectively promoted, and the polishing performance of polishing liquid on the workpiece is promoted. Meanwhile, in combination with the problem of uneven polishing of a large-size workpiece in the polishing process, the scheme provides a series of focusing areas formed by focusing ultrasonic clusters, and ultrasonic focusing with corresponding power is carried out on different focusing areas, so that the material removal rate of different areas of the workpiece is effectively controlled, and finally, the high-uniformity polishing surface without a damaged layer is obtained.
2. The cluster ultrasonic transduction mechanism focuses the workpiece in a partitioned mode, so that auxiliary effects obtained in different areas can be compensated from inside to outside along with the radial direction of the workpiece, and the phenomenon of uneven polishing effect caused by uneven linear speed can be overcome, and the defects in the prior art are overcome.
3. In step C of the scheme, the polishing solution is added continuously, mainly for forming the circulating flow effect of the polishing solution between the workpiece and the polishing pad in the polishing process, because a lot of particulate matters in the polishing solution can be deposited on the polishing pad along with the gravity effect, if the required amount of polishing solution is directly added before the polishing starts, the particle agglomeration deposition in the polishing solution can cause a lot of irregular scratches and subsurface damages on the surface of the workpiece after polishing in the polishing process. The scheme adopts a continuous adding mode, so that the polishing solution added in the polishing process can be ensured to be in a state of uniform distribution and no aggregation, and the polishing solution flowing between the polishing pad and the workpiece can be updated in real time, so that a higher material removing effect is achieved.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments.
A cluster focused ultrasound compound polishing method using a cluster ultrasound transduction mechanism 1, and the cluster ultrasound transduction mechanism 1 includes a plurality of ultrasound transducers 11, the cluster focused ultrasound compound polishing method comprising the steps of:
A. Adjusting the setting position of the workpiece 2 to enable the polishing area of the workpiece 2 to be propped against the polishing pad 3;
B. Respectively adjusting the focusing angles and the powers of a plurality of ultrasonic transducers 11, focusing ultrasonic vibration through the ultrasonic transducers 11, then transmitting the ultrasonic vibration outwards in an ultrasonic mode, and forming a plurality of focusing ultrasonic units 101 in a polishing area of a workpiece 2, wherein the plurality of focusing ultrasonic units 101 form a focusing ultrasonic area;
C. continuously adding polishing liquid between the workpiece 2 and the polishing pad 3, and immersing the polishing area of the workpiece 2 by the polishing liquid;
D. the workpiece 2 is rotated about its own axis until material is removed from the polishing area of the workpiece 2, wherein the polishing area of the workpiece 2 is located within the range in which the workpiece 2 and the polishing pad 3 are relatively moved.
In 1942 Lynn, the concept of ultrasonic surgery is proposed, in 1956 Burov proposes that high-intensity focused ultrasound has better effect than low-intensity focused ultrasound when treating tumor for the first time, high-intensity focused ultrasound has been one of the important means for tumor treatment in the early 80 s of the last century, and several companies have successfully developed high-intensity focused ultrasound tumor treatment devices in the last 90 s of the last century. By focusing the ultrasonic transducer, ultrasonic vibration is focused and transmitted out in an ultrasonic form, high heat is generated in an ultrasonic focusing region, and tissues in the focusing region are necrotized due to the high heat, so that the aim of suppressing tumors at fixed points is fulfilled. The application of ultrasound in biomedicine discloses a non-contact method for transmitting high-energy ultrasound energy, and opens up a new direction for the application of ultrasound.
Therefore, on the basis of the research, the invention provides a cluster focusing ultrasonic composite polishing method, which adopts a non-contact ultrasonic principle to focus ultrasonic at the interface of a workpiece 2 and polishing liquid, and can effectively transfer the energy generated by ultrasonic into the polishing liquid and use the ultrasonic energy for polishing.
Specifically, the technical scheme provides a cluster focusing ultrasonic compound polishing method, which comprises the steps of firstly adjusting the setting position of a workpiece 2, enabling a polishing area of the workpiece 2 to be propped against a polishing pad 3 (a certain pressure exists between the workpiece 2 and the polishing pad 3 at the moment), then respectively adjusting the focusing angles and powers of a plurality of ultrasonic transducers 11, focusing ultrasonic vibration through the ultrasonic transducers 11, then transmitting the ultrasonic vibration outwards in an ultrasonic mode, forming a focusing ultrasonic area consisting of a plurality of focusing ultrasonic units 101 in the polishing area of the workpiece 2, adjusting ultrasonic energy of each focusing ultrasonic unit 101 through adjusting ultrasonic frequencies of the corresponding ultrasonic transducers 11, then continuously adding polishing liquid between the workpiece 2 and the polishing pad 3, enabling the polishing liquid to submerge the polishing area of the workpiece 2, and finally enabling the workpiece 2 to rotate around an axis of the workpiece until materials in the polishing area of the workpiece 2 are removed, and polishing is completed.
The invention provides a cluster focusing ultrasonic composite polishing method applied to polishing on the basis of the research of applying a focusing ultrasonic technology to medical treatment, which adopts a non-invasive ultrasonic processing principle to focus ultrasonic waves on a polishing area of a workpiece 2, can effectively promote the processing process of the surface of the workpiece 2 in the polishing process, and promotes the polishing performance of polishing liquid on the workpiece 2. Meanwhile, in combination with the problem of uneven polishing of a large-size workpiece in the polishing process, the scheme provides a series of focusing areas formed by focusing ultrasonic clusters, and ultrasonic focusing with corresponding power is carried out on different focusing areas, so that the material removal rate of different areas of the workpiece 2 is effectively controlled, and finally, the high-uniformity polishing surface without a damaged layer is obtained.
Under the action of the cluster focused ultrasound, thermal effects, cavitation effects and mechanical effects can be generated on the surface of the workpiece 2. Wherein, the heat effect mainly causes more heat to be generated between the polishing pad 3 and the polished workpiece 2 in the polishing process, so as to promote the thermal motion of the polishing liquid in the polishing process and enhance the chemical corrosion action of the polishing liquid on the surface of the workpiece 2, namely promote the oxidation reaction process of the surface material of the workpiece 2 and the polishing liquid, thereby improving the corrosion rate in the polishing process and enabling the material of the workpiece 2 to be removed more easily. The cavitation effect is mainly to enable cavitation bubbles to be generated on the surface of the polished workpiece 2, and the cavitation bubbles are accumulated to grow up and collapse to generate a micro-jet effect, so that micro-jet can promote micro-abrasive particles embedded in a polishing pad to loosen in the polishing process, reduce hardening phenomenon of the polishing pad 3 caused by particle blocking, and promote the flow speed of polishing liquid on the surface of the workpiece 2 at the same time, so that the polishing speed is improved, in addition, the micro-jet effect of the cavitation effect can also generate an impact cutting effect on structures such as micro-convex peaks on the surface of the polished workpiece 2, and further improve the polishing quality of the surface of the workpiece 2. The mechanical effect is mainly generated by the vibration effect transmitted by ultrasonic waves, and the collision frequency of the abrasive particle pairs on the surface of the workpiece 2 and the workpiece 2 can be promoted by focusing the ultrasonic waves on the surface of the workpiece 2 to generate the mechanical effect, so that the mechanical effect of the abrasive particle on the material removal of the workpiece 2 can be increased, and the polishing efficiency is promoted.
Further, as the cluster ultrasonic transduction mechanism 1 performs zone focusing on the workpiece 2, the auxiliary effect obtained by different zones can be compensated from inside to outside along with the radial direction of the workpiece 2, so that the phenomenon of uneven polishing effect caused by uneven linear speed can be avoided, and the defects in the prior art can be overcome.
Furthermore, in step C of the present embodiment, the polishing solution is added continuously, mainly to form a circulating flow between the workpiece 2 and the polishing pad 3 during polishing, because many particulate matters in the polishing solution will deposit on the polishing pad 3 under the action of gravity, if the required amount of polishing solution is directly added before polishing starts, many irregular scratches and subsurface damages will be generated on the surface of the workpiece 2 after polishing due to the agglomeration and deposition of the particulates in the polishing solution during polishing. The scheme adopts a continuous adding mode, so that the polishing solution added in the polishing process can be ensured to be in a state of uniform distribution and no aggregation, and the polishing solution flowing between the polishing pad 3 and the workpiece 2 can be updated in real time, so that a higher material removing effect is achieved.
It should be noted that, the ultrasonic transducer 11 in this embodiment is a conventional ultrasonic transducer element in the field of ultrasonic technology, and a main portion thereof is composed of piezoelectric ceramics and an acoustic lens for focusing ultrasonic waves generated by the piezoelectric ceramics, and the specific structure of the ultrasonic transducer 11 is not described herein.
Further, in the step B, the power of the ultrasonic transducer 11 is 300 to 1000khz.
In order to ensure that focused ultrasonic energy meets polishing requirements, the power of the ultrasonic transducer 11 is preferably 300-1000 KHz.
Further, in the step C, the addition rate of the polishing solution is as follows:
0~2min:50~70ml/min;
>2min:10~15ml/min。
In a preferred embodiment of the present disclosure, the addition rate of the polishing solution is further limited, that is, in the first 2 minutes in the polishing process, since the polishing solution between the polishing pad 3 and the workpiece 2 is less in the initial stage of polishing, the polishing pad 3 is not completely wetted by the polishing solution, in order to make the workpiece 2 contact with the wetted polishing pad 3, the addition rate of the polishing solution is preferably 50-70 ml/min, and after 2 minutes from the beginning of the polishing process, the polishing solution is gradually thrown away from the polishing center along with the centrifugal action, so as to ensure the polishing uniformity of the workpiece 2, in this embodiment, the polishing solution is continuously added to the polishing region of the workpiece 2, so as to ensure the uniform distribution of the polishing solution and increase the fluidity of the polishing solution to prevent agglomeration of the polishing solution, so that the addition rate of the polishing solution is preferably 10-15 ml/min.
Further, the step a specifically further includes:
A. adjusting the setting position of the workpiece 2, enabling the polishing area of the workpiece 2 to prop against the polishing pad 3, and adjusting the polishing pressure of the polishing area of the workpiece 2 through the setting position of the workpiece 2;
The step D specifically further comprises the following steps:
D. The workpiece 2 is rotated around its own axis while the polishing pad 3 is rotated around its own axis, and the axis of the workpiece 2 and the axis of the polishing pad 3 are parallel to each other, and the rotation direction of the workpiece 2 is opposite to the rotation direction of the polishing pad 3 until the material of the polishing area of the workpiece 2 is removed.
In another preferred embodiment of the present disclosure, the setting position of the workpiece 2 is adjusted in step a to achieve the adjustment of the polishing pressure of the polishing area of the workpiece 2, which is more beneficial to ensure the polishing effect of the workpiece 2.
In addition, in step D, the polishing pad 3 is simultaneously rotated around its own axis in a direction opposite to the rotation direction of the workpiece 2, which is more advantageous in that the polishing area of the workpiece 2 obtains a certain linear velocity. It should be noted that, in this solution, the rotation direction of the polishing pad 3 is preferably opposite to the rotation direction of the workpiece 2, that is, when the polishing pad 3 rotates clockwise, the workpiece 2 rotates counterclockwise, so that the polishing area of the workpiece 2 has a larger linear velocity, thereby improving the polishing rate of the polishing device.
To further illustrate, the clustered ultrasonic transducer 1 includes a plurality of adjustment seats, and the number of the ultrasonic transducers 11 corresponds to the number of the adjustment seats, and one ultrasonic transducer 11 is mounted on one adjustment seat;
The adjusting seat comprises a clamping assembly 121 and an angle adjusting assembly 122, wherein the angle adjusting assembly 122 is arranged at the bottom of the clamping assembly 121, the clamping assembly 121 is used for accommodating the ultrasonic transducer 11, and the angle adjusting assembly 122 is used for adjusting the focusing angle of the ultrasonic transducer 11 through the clamping assembly 121;
The clamping assembly 121 comprises a mounting base 1211, a clamping arm 1212 and an elastic piece 1213, wherein a mounting table is arranged at the inner bottom of the mounting base 1211 in a protruding manner and is used for mounting the ultrasonic transducer 11, the clamping arm 1212 is hinged to two sides of the top edge of the mounting base 1211 in a swinging manner, the hinge point of the clamping arm 1212 is positioned in the middle of the clamping arm 1212, the elastic piece 1213 is propped against the tail end of the clamping arm 1212 and the side wall of the mounting table, and the clamping arm 1212 swings relative to the mounting base 1211 through the elastic piece 1213, so that stable clamping of the ultrasonic transducer 11 is realized;
a first adjusting point and a second adjusting point are respectively arranged on two sides of the bottom of the installation base 1211;
The angle adjusting assembly 122 comprises a connecting rod 1221, a push rod 1222 and a linear driver 1223, wherein one end of the connecting rod 1221 is hinged with the first adjusting point, the other end of the connecting rod 1221 is relatively static with the linear driver 1223, the push rod 1222 is vertically arranged, one end of the push rod 1222 is hinged with the second adjusting point, the other end of the push rod 1222 is connected with the output end of the linear driver 1223, the push rod 1222 vertically moves relative to the linear driver 1223, and the linear driver 1223 is used for driving the vertical movement of the push rod 1222.
Further, the present solution also optimizes the structure of the adjusting seat in the clustered ultrasonic transducer mechanism 1 for adjusting the focusing angle of the ultrasonic transducer 11, as shown in fig. 1, so as to adjust the focusing position of the focused ultrasonic unit 101, and has a simple structure and reliable performance.
The technical scheme also provides a cluster focusing ultrasonic composite polishing device which is used for realizing the cluster focusing ultrasonic composite polishing method and comprises the cluster ultrasonic transduction mechanism 1 and a first polishing mechanism;
The first polishing mechanism comprises a first working platform 41, a first polishing component 42, a supporting component 43 and a first feeding component 44, wherein the first polishing component 42 is rotatably installed on the top of the first working platform 41, the supporting component 43 and the first feeding component 44 are installed on the top of the first working platform 41, the supporting component 43 is used for installing a workpiece 2, and the first feeding component 44 is used for adding polishing liquid to the first polishing component 42;
The first polishing assembly 42 comprises a first polishing base 421 and a first polishing disk 422, wherein the first polishing disk 422 is arranged on the top of the first polishing base 421, the top of the first polishing base 421 is provided with a mounting cavity for mounting the cluster ultrasonic transduction mechanism 1, the top of the first polishing disk 422 is provided with a containing cavity for containing a polishing pad 3 and a polishing liquid, and the first polishing assembly 42 and the polishing pad 3 are relatively static;
The support assembly 43 comprises a support frame 431 and a first workpiece disc 432, the support frame 431 is mounted on the top of the first working platform 41, the first workpiece disc 432 is mounted on the bottom of the support frame 431 in a vertically movable manner, the first workpiece disc 432 is located above the cluster ultrasonic transduction mechanism 1, the first workpiece disc 432 can rotate around an axis of the first workpiece disc 432, and the workpiece 2 is mounted on the bottom of the first workpiece disc 432.
As shown in fig. 2-3, the cluster focused ultrasound composite polishing device in one embodiment of the present disclosure includes a cluster ultrasonic transduction mechanism 1 and a first polishing mechanism, so that a required focused ultrasound region is formed at an ideal position of a polishing region.
Since the first workpiece tray 432 in the above embodiment is mounted on the bottom of the supporting frame 431 to be movable up and down, the polishing pressure of the workpiece 2 can be adjusted by adjusting the installation position of the first workpiece tray 432 relative to the polishing pad 3.
Further, the rotational speed of the first polishing member 42 is 10 to 50rmp, and the rotational speed of the first workpiece disk 432 is 50 to 150rmp.
As a preference to the above-described embodiment, the present solution also prefers the rotational speed of the first polishing assembly 42 and the rotational speed of the first workpiece disk 432. Wherein, compared with the rotation speed of the first workpiece disk 432, the rotation speed of the first polishing component 42 is lower, so that the polishing liquid can be prevented from splashing out due to the overlarge centrifugal force, and the overlarge centrifugal force can cause free abrasive to be distributed at the edge of the first polishing disk 422, so that the abrasive concentration of a polishing area is reduced, and the polishing efficiency and polishing quality are reduced.
Example 1
The cluster focused ultrasonic composite polishing device in the embodiment is used for polishing monocrystalline silicon with the diameter of 150mm, and comprises the following steps:
A. Adjusting the setting position of the monocrystalline silicon to enable the polishing area of the monocrystalline silicon to be propped against the polishing pad 3, and enabling the polishing pressure of the monocrystalline silicon to be 20-60kPa;
B. Respectively adjusting the focusing angles and powers of a plurality of ultrasonic transducers 11, focusing ultrasonic vibration through the ultrasonic transducers 11, then transmitting the ultrasonic vibration outwards in an ultrasonic mode, and forming 37 focusing ultrasonic units 101 shown in figure 7 in a polishing area of monocrystalline silicon, wherein the 37 focusing ultrasonic units 101 are all round and have the diameter of 20mm, in addition, the 37 focusing ultrasonic units 101 form a focusing ultrasonic area with four circular subareas, and respectively carrying out gradient adjustment on the powers of the ultrasonic transducers 11 corresponding to the four circular subareas according to the required polishing effect, so that the power of the focusing ultrasonic area is continuously reduced along the radial direction from the center of the monocrystalline silicon, specifically, the power of the serial number 1 is 900-1000kHz, the power of the serial number 2-7 is 700-800kHz, the serial number 8-19 is 400-600kHz, and the serial number 20-37 is 100-300kHz;
C. Continuously adding a polishing solution between the monocrystalline silicon and the polishing pad 3, and immersing a polishing area of the monocrystalline silicon by the polishing solution;
D. The monocrystalline silicon rotates around the axis (the rotation speed is 60-100 rpm), the polishing pad 3 rotates around the axis (the rotation speed is 20 rpm) at the same time, the axis of the monocrystalline silicon is parallel to the axis of the polishing pad 3, the rotation direction of the monocrystalline silicon is opposite to the rotation direction of the polishing pad 3, after the monocrystalline silicon is processed for 60min, the polishing of the monocrystalline silicon surface material is completed, the surface flatness TTV of the monocrystalline silicon after polishing is less than or equal to 10 microns, the surface roughness Ra is less than or equal to 0.2nm, and the polishing process is efficient and the polishing surface is smooth.
Example 2
The cluster focused ultrasonic composite polishing device in the embodiment is used for polishing monocrystalline silicon carbide with the diameter of 100mm and the lower surface of which is an arc surface, and comprises the following steps:
A. adjusting the setting position of the monocrystalline silicon carbide to enable the polishing area of the monocrystalline silicon to be propped against the polishing pad 3, and enabling the polishing pressure of the monocrystalline silicon carbide to be 30-80kPa;
B. Respectively adjusting the focusing angles and powers of a plurality of ultrasonic transducers 11, focusing ultrasonic vibration through the ultrasonic transducers 11, then transmitting the ultrasonic vibration outwards in an ultrasonic mode, and forming 19 focusing ultrasonic units 101 shown in figure 8 in a polishing area of monocrystalline silicon carbide, wherein the 19 focusing ultrasonic units 101 are all round in shape and 30mm in diameter, in addition, the 19 focusing ultrasonic units 101 form a focusing ultrasonic area with three circular subareas, and respectively carrying out gradient adjustment on the powers of the ultrasonic transducers 11 corresponding to the three circular subareas according to the required polishing effect, so that the power of the focusing ultrasonic area is continuously reduced along the radial direction from the center of the monocrystalline silicon carbide, specifically, the power of the sequence number 1 is 800-1000kHz, the power of the sequence number 2-7 is 400-700kHz, and the power of the sequence number 8-19 is 100-300kHz;
C. continuously adding a polishing liquid between the monocrystalline silicon carbide and the polishing pad 3, and immersing a polishing area of the monocrystalline silicon carbide by the polishing liquid;
D. The monocrystalline silicon carbide rotates around the axis (the rotation speed is 60-100 rpm), the polishing pad 3 rotates around the axis (the rotation speed is 20 rpm) at the same time, the axis of the monocrystalline silicon carbide is parallel to the axis of the polishing pad 3, the rotation direction of the monocrystalline silicon carbide is opposite to the rotation direction of the polishing pad 3, after the monocrystalline silicon carbide is processed for 100min, the polishing of the monocrystalline silicon carbide surface material is completed, the surface flatness TTV of the monocrystalline silicon carbide after polishing is less than or equal to 15 microns, the surface roughness Ra is less than or equal to 0.3nm, and the polishing process is efficient and the polishing surface is smooth. In addition, optical microscopy detection is carried out on the surface of the polished monocrystalline silicon carbide, and the monocrystalline silicon carbide has no subsurface damage.
The technical scheme also provides another cluster focusing ultrasonic composite polishing device which is used for realizing the cluster focusing ultrasonic composite polishing method and comprises the cluster ultrasonic transduction mechanism 1 and a second polishing mechanism;
The second polishing mechanism comprises a second working platform 51, a second polishing component 52 and a second feeding component 53, wherein the second polishing component 52 and the second feeding component 53 are both arranged on the top of the second working platform 51, and the second feeding component 53 is used for adding polishing liquid to the second polishing component 52;
The second polishing assembly 52 comprises a rotating main shaft 521, a second polishing base 522, a second polishing disc 523, a sliding mounting rack 524 and a second workpiece disc 525, wherein the rotating main shaft 521 is rotatably mounted on the top of the second working platform 51, the second polishing disc 523 and the second polishing base 522 are sequentially sleeved on the rotating main shaft 521 from top to bottom, the second polishing disc 523 and the second polishing base 522 are relatively static, the rotating main shaft 521 rotates relative to the second polishing disc 523 and the second polishing base 522, the second polishing disc 523 is used for accommodating a polishing pad 3 and accommodating polishing liquid, and the second polishing disc 523 and the polishing pad 3 are relatively static;
The second workpiece disc 525 is horizontally movably arranged on the top of the second polishing base 522, the second workpiece disc 525 is vertically movably arranged on the top of the second polishing disc 523, the workpiece 2 is arranged on the bottom of the second workpiece disc 525 relative to the second polishing disc 523, the sliding mounting frame 524 is engaged between the second polishing base 522 and the rotating main shaft 521, the second workpiece disc 525 is engaged between the second polishing disc 523 and the rotating main shaft 521, and the rotation of the rotating main shaft 521 is used for simultaneously driving the sliding mounting frame 524 and the second workpiece disc 525 to make planetary wheel movement around the rotating main shaft 521, the second workpiece disc 525 is positioned above the sliding mounting frame 524, and the sliding mounting frame 524 and the second workpiece disc 525 are relatively static;
one of the slide mount 524 and one of the second workpiece disks 525 is one polishing unit provided with a plurality of polishing units.
As shown in fig. 4 to 6, the cluster focused ultrasound composite polishing device in another embodiment of the present solution includes the cluster ultrasonic transduction mechanism 1 and the second polishing mechanism, which not only facilitates the formation of a required focused ultrasound region at an ideal position of a polishing region, but also can simultaneously implement the polishing process of a plurality of polishing units, thereby greatly improving the polishing efficiency of the polishing device.
It should be noted that, in this embodiment, the rotation of the rotating main shaft 521 is used to drive the sliding mounting frame 524 and the second workpiece disc 525 to make a planetary motion around the rotating main shaft 521, which means that a second workpiece disc 525 corresponds to a sliding mounting frame 524 (which is provided with the clustered ultrasonic transducer 1), the second workpiece disc 525 and the corresponding sliding mounting frame 524 are always coaxial in the process of revolving around the rotating main shaft 521, and the rotation directions of the second workpiece disc 525 and the corresponding sliding mounting frame 524 are the same.
In the polishing apparatus according to the present embodiment, since the second work disk 525 moves up and down with respect to the second polishing disk 523, a substance having a weight such as a weight may be added to the top of the second work disk 525 to adjust the polishing pressure of the work 2.
Further, the rotation speed of the rotation main shaft 521 is 10 to 100rmp.
Further illustratively, the gear ratio of the rotating spindle 521 and the second workpiece disk 525 is 1:1.
When the rotation speed of the rotation main shaft 521 is 10-100 rmp, according to the gear ratio of the rotation main shaft 521 to the second workpiece disk 525 being 1:1, it can be obtained that the rotation speed of the second workpiece disk 525 around the self axis is 10-100 rmp, the rotation speed around the rotation main shaft 521 is 2.5-25 rmp, the second polishing disk 523 and the second polishing base 522 do not rotate along with the rotation main shaft 521, so that the polishing liquid can be prevented from splashing due to overlarge centrifugal force, and meanwhile, the overlarge centrifugal force can also cause free abrasive to be distributed at the edge of the second polishing disk 523, thereby reducing the abrasive concentration of a polishing area and reducing the polishing efficiency and polishing quality.
Example 3
The cluster focused ultrasound composite polishing device in the embodiment is used for polishing single crystal gallium nitride with the diameter of 100mm, and comprises the following steps:
A. a weight is added above the second workpiece disk 525 to make the polishing area of the monocrystalline silicon prop against the polishing pad 3, and the polishing pressure of the monocrystalline gallium nitride silicon is 50-90kPa;
B. Respectively adjusting the focusing angles and powers of a plurality of ultrasonic transducers 11, focusing ultrasonic vibration through the ultrasonic transducers 11, then transmitting the ultrasonic vibration outwards in an ultrasonic mode, and forming 19 focusing ultrasonic units 101 in a polishing area of single crystal gallium nitride, wherein the 19 focusing ultrasonic units 101 are all round and have the diameter of 30mm, in addition, the 19 focusing ultrasonic units 101 form a focusing ultrasonic area with three circular subareas, and according to the required polishing effect, the powers of the ultrasonic transducers 11 corresponding to the three circular subareas are respectively subjected to gradient adjustment, so that the power of the focusing ultrasonic area is continuously reduced along the radial direction from the center of the single crystal gallium nitride, specifically, the power of the serial number 1 is 800-1000kHz, the serial number 2-7 is 400-700kHz, and the serial number 8-19 is 100-300kHz;
C. continuously adding a polishing solution between the monocrystalline gallium nitride and the polishing pad 3, and immersing a polishing area of the monocrystalline gallium nitride by the polishing solution;
D. The monocrystalline gallium nitride is enabled to rotate around the axis (the rotation speed is 20-40 rpm), the surface material of the monocrystalline gallium nitride is polished after 60min, the surface flatness TTV of the polished monocrystalline gallium nitride is less than or equal to 15 microns, the surface roughness Ra is less than or equal to 0.3nm, and the polishing process is efficient and the polished surface is smooth. In addition, the polished surface of the monocrystalline gallium nitride is subjected to optical microscope detection, and the monocrystalline gallium nitride has no subsurface damage.
The technical principle of the present invention is described above in connection with the specific embodiments. The description is made for the purpose of illustrating the general principles of the invention and should not be taken in any way as limiting the scope of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of this specification without undue burden.