CN118835309A - Method for obtaining stacked superlattice based on transition metal element or chalcogen element doping and application - Google Patents

Abstract

The present invention discloses a method and application of obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements, which belongs to the technical field of functional devices. With transition metal dichalcogenides as the matrix, transition metal elements or chalcogen elements are doped, and the formation energy/thermal stability of 1T structure and 1H structure are balanced by adjusting the stoichiometric ratio of the doping elements, so as to realize the self-assembly synthesis of 1T and 1H stacked superlattices. The present invention constructs a set of control engineering in the application field of functional devices by changing the doping elements and the concentration of the doping elements, and realizes wide applications in the fields of adjustable superconducting dimensional devices, adjustable Ising superconducting devices, heavy fermion superconducting devices, etc. These applications demonstrate the potential of 1T and 1H stacked superlattices in realizing new quantum phenomena and functional devices, and provide a new direction for future scientific and technological development.

Description

Method and application of obtaining stacked superlattice based on doping of transition metal elements or chalcogen elements

Technical Field

The present invention relates to the technical field of functional devices, and in particular to a method and application of obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements.

Background Art

Vertical heterostructures and superlattices of transition metal dichalcogenides (TMDs) are constructed by stacking two-dimensional TMD layers arranged along the c-axis. The unique structural combination enables them to have the inherent electronic and optical physical characteristics of each component while also constructing new physical functions and properties. They play an important role in the future fields of nanotechnology and materials science.

In the field of functional devices, the application prospects of TMDs vertical heterostructures and superlattices are particularly broad. For example, they show unique advantages in field effect transistors, photodetectors, photovoltaic devices, and quantum computing components. At present, the construction method of this superlattice mainly adopts traditional preparation methods, such as epitaxial growth, chemical vapor deposition (CVD), and mechanical exfoliation deposition. However, these methods have some advantages and disadvantages. At present, the preparation technology of TMDs vertical heterostructures and superlattices has encountered many difficulties in achieving high quality, large size and multilayer structures; by improving and optimizing existing processes, and exploring more advanced and more controllable new preparation technologies and materials, the structure and performance of TMDs can be more accurately controlled. This is of immeasurable value for promoting the continuous progress of TMDs in the fields of nanotechnology and materials science, and realizing their potential in future high-tech applications.

In recent years, the emergence of a natural self-assembled alternating layer material has provided new possibilities for the possible replacement of traditional TMDs vertical heterostructures and superlattice structures in the future. This material can spontaneously organize into an ordered structure using its inherent tendency, thus circumventing the limitations of layer-by-layer construction in traditional methods. Early studies have proposed some preparation methods for this type of material, especially alternating layer superlattice materials of tantalum disulfide. However, these methods rely heavily on selenium powder, and the specific role of selenium powder in the growth process is still unclear, which greatly reduces the operability of successfully preparing 1T/1H superlattices and limits the doping control ability of the material. In addition, 1T and 1H stacking superlattices are difficult to prepare, have poor single crystal quality, and have uneven properties, and lack available functional devices.

Therefore, it is necessary to develop a new method to achieve precise control of material composition, structure and physical properties. The present invention proposes a method and application of obtaining stacked superlattices based on doping with transition metal elements or chalcogen elements to solve the above problems.

Summary of the invention

The purpose of the present invention is to provide a method and application of obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements. By changing the doping elements and the concentration of the doping elements, a set of regulatory engineering in the application field of functional devices is constructed, and wide applications in the fields of adjustable superconducting dimensional devices, adjustable Ising superconducting devices, heavy fermion superconducting devices, etc. are achieved. These applications demonstrate the potential of 1T and 1H stacked superlattices in realizing new quantum phenomena and functional devices, and provide a new direction for future scientific and technological development.

To achieve the above-mentioned purpose, the present invention provides a method for obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements, taking a transition metal dichalcogenide as a matrix, doping with transition metal elements or chalcogen elements, and adjusting the stoichiometric ratio of the doping elements to achieve a balance between the formation energy/thermal stability of the 1T structure and the 1H structure, thereby realizing the self-assembly synthesis of 1T and 1H stacked superlattices.

The transition metal element is one or more of vanadium, niobium, tantalum, titanium, molybdenum, and tungsten; the chalcogen element is one or more of sulfur, selenium, and tellurium.

The present invention proposes a 1T and 1H stacking superlattice, which is prepared by the above preparation method.

Preferably, the 1T and 1H stacking superlattice include 1T/1H stacking superlattice (including 4H _b and 6R stacking superlattice), 1T/1T/1H stacking superlattice and 1T/1H/1H stacking superlattice, etc.

Preferably, the specific preparation steps of the 1T and 1H stacking superlattice are:

S1. Weigh a doping element raw material and a transition metal dichalcogenide compound matrix raw material, wherein the doping element is a transition metal element or a chalcogen element, and the total stoichiometric ratio of the transition metal element to the chalcogen element is 1:2;

S2, mixing and grinding the raw materials weighed in S1, and then placing them in a muffle furnace at a temperature of 700-900° C. for 3-6 days to obtain a uniformly mixed polycrystalline powder;

S3, placing the obtained polycrystalline powder in a dual-temperature zone tube furnace and growing it for 7 to 10 days using a chemical vapor transport method;

S4. Quench in an ice-water mixture to obtain 1T and 1H stacking superlattices.

Preferably, the joint characterization method of the 1T and 1H stacking superlattice is: joint characterization of scanning transmission electron microscopy, energy dispersive X-ray spectrometer, Raman spectrometer, scanning tunneling microscope, angle-resolved photoelectron spectrometer and dilution refrigerator, specifically:

1) Use scanning transmission electron microscopy, energy dispersive X-ray spectrometer, and scanning tunneling microscope for joint characterization to determine the basic physical properties of the material, including elemental composition, stoichiometric ratio, crystal structure, and surface electronic structure;

2) Joint characterization is performed using a Raman spectrometer, an angle-resolved photoelectron spectrometer, and a dilution refrigerator: the strength of the interlayer coupling of 1T and 1H stacking superlattices is reflected by the frequency shift of the phonon vibration mode; the electronic dimension of the material is reflected by the kz dispersion relation of the band structure; the superconducting dimension and the strength of Ising are reflected by the in-plane and out-of-plane superconducting properties.

The above-mentioned 1T and 1H stacked superlattices are applied to functional devices, and different functional applications are achieved by regulating the doping elements and the concentration of the doping elements. The functional devices include adjustable superconducting dimensional devices, adjustable Ising superconducting devices and heavy fermion superconducting devices.

Preferably, the adjustable superconducting dimension device realizes the regulation of the superconducting dimension of the superlattice device by changing the doping elements and the concentration of the doping elements and adjusting the interlayer coupling strength; specifically, using niobium diselenide as the matrix and doping with titanium at a concentration of 0.3% to 3%, the two-dimensional transformation of the superconducting dimension of the 1T/1H superlattice device can be realized, or the tellurium at a doping concentration of 17% to 30% can realize the three-dimensional transformation of the superconducting dimension of the 1T/1H superlattice device.

Preferably, the adjustable Ising superconducting device achieves regulation of Ising superconductivity by changing the doping elements and the concentration of the doping elements, adjusting the interlayer coupling strength and the insulation of the 1T layer; specifically, using niobium diselenide as the matrix and doping vanadium at a concentration of 0.3% to 5%, an Ising superconducting device with a ratio of the horizontal critical field to the Pauli paramagnetic limit of 1-20 can be achieved.

Preferably, the heavy fermion superconducting device is an artificial heavy fermion device in a 1T/1H superlattice obtained by changing the doping elements and the concentration of the doping elements to construct a 1T layer superlattice containing localized magnetic moments and a 1H layer superlattice of itinerant electrons; specifically, taking niobium diselenide as the matrix and doping vanadium with a concentration of 0.3% to 7%, a heavy fermion superconducting device can be realized.

Therefore, the method and application of the present invention for obtaining stacked superlattice based on doping with transition metal elements or chalcogen elements have the following beneficial effects:

(1) In the preparation method of the present invention, the stoichiometric ratio of each transition metal element and chalcogen element is precisely controlled, and the polycrystalline powder is sintered at a high temperature to make the raw materials uniformly mixed; then, 1T and 1H stacking superlattices are grown at a specific temperature by chemical vapor transport, and their structure and properties are stabilized by ice water quenching process, which greatly simplifies the preparation process of 1T and 1H stacking superlattices and significantly improves the preparation efficiency and yield. Compared with the traditional multi-step epitaxial growth or mechanical stacking method, the method of the present invention provides a new possibility for the large-scale preparation of high-quality superlattices, and is expected to accelerate research and application in related fields.

(2) The present invention realizes the self-assembly synthesis of 1T and 1H stacking superlattices by adjusting the stoichiometric ratio of doping elements (transition metal elements or chalcogen elements), and the preparation process requires sintering of polycrystalline powder to make the raw materials evenly mixed, and ice water quenching to stabilize the superlattice structure and properties. Therefore, when the growth parameters and environmental variables are kept consistent, the prepared superlattice will show uniform physical properties and excellent crystal quality, which is crucial for the accurate analysis of samples under various characterization instruments. In addition, the high-crystal quality superlattice reduces crystal defects such as dislocations and impurities in traditional preparation methods, and the uniform physical properties ensure that the performance of the superlattice remains consistent between different regions and different production batches, which is extremely important for scientific research and industrial applications.

(3) The 1T and 1H stacked superlattices prepared by the method of the present invention show great application potential in the field of functional devices, especially in cutting-edge scientific and technological fields such as quantum computing, spin electronics and optoelectronics. These high-quality superlattices provide an ideal material platform for realizing new quantum phenomena and developing high-performance devices. For example, in quantum computing, superlattices can be used to construct controllable multi-qubit systems to provide support for fast and scalable quantum computing. Specifically, this can be achieved by constructing adjustable superconducting dimensional devices, adjustable Ising superconducting devices and heavy fermion superconducting devices. These applications demonstrate the potential of 1T and 1H stacked superlattices in realizing new quantum phenomena and functional devices, and provide a new direction for future scientific and technological development.

The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a flow chart of the preparation of 1T and 1H stacking superlattices in TMDs of the present invention;

FIG2 is an EDS spectrum diagram of the Nb _0.9 V _0.1 Se ₂ superlattice of Example 1 of the present invention, wherein (a) and (b) represent EDS spectrum diagrams of different regions, respectively;

FIG3 is a morphology image spanning 1T layer and 1H layer in Nb _0.9 V _0.1 Se ₂ superlattice obtained by STM in Example 1 of the present invention;

FIG4 is a Raman spectrum of the Nb _0.9 V _0.1 Se ₂ superlattice of Example 1 of the present invention;

FIG5 is an ARPES band diagram of the Nb _0.9 V _0.1 Se ₂ superlattice of Example 1 of the present invention along the Γ-M high symmetry direction at different photon energies, wherein (a) is hν=30 eV; (b) is hν=35 eV; (c) is hν=40 eV; (d) is hν=45 eV;

FIG6 is a Z-contrast atomic image along the [110] direction obtained by HAADF-STEM in Examples 1-3 of the present invention, wherein (a) is Nb _0.9 V _0.1 Se ₂ , (b) is Nb _0.95 Ti _0.05 Se ₂ , and (c) is NbSe _1.11 Te _0.89 ;

FIG7 is a measurement of superconductivity of the Nb _0.95 Ti _0.05 Se ₂ superlattice device of Example 2 of the present invention, wherein (a) is the relationship between the resistance and the temperature; (b) is the relationship between the resistance and the horizontal magnetic field;

8 shows the relationship between the ratio of the horizontal critical field to the Pauli paramagnetic limit (H _c2 /H _P ) of the Nb _0.95 Ti _0.05 Se ₂ and NbSe _1.11 Te _0.89 superlattice devices of Examples 2 and 3 of the present invention and the variation with the doping concentration.

DETAILED DESCRIPTION

The technical solution of the present invention is further described below through the accompanying drawings and embodiments.

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

The present invention provides a method for obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements, as shown in FIG1 , and a 1T/1H superlattice device with different functional applications can be realized through doping regulation.

Example 1

Preparation of 1T/1H Nb _0.9 V _0.1 Se ₂ superlattice: Niobium diselenide (NbSe ₂ ) is used as a matrix and vanadium (V) element is doped with a concentration of 3.33%.

1) According to the stoichiometric ratio of Nb:V:Se=0.9:0.1:2, 0.51 g of niobium (Nb) powder, 0.31 g of vanadium (V) powder and 0.96 g of selenium (Se) powder were mixed;

2) placing the mixed raw materials in a muffle furnace and maintaining it at 850° C. for 4 days to form a uniformly mixed polycrystalline powder;

3) transferring the polycrystalline powder to a dual-temperature zone tubular furnace, using iodine (I ₂ ) as a transport agent, setting the reaction zone temperature to 900° C., the growth zone temperature to 800° C., and the growth cycle to 10 days;

4) The grown sample is quickly placed in a pre-prepared ice-water mixture for quenching treatment to stabilize the superlattice structure and improve its crystal quality, thereby obtaining a 1T/1H Nb _0.9 V _0.1 Se ₂ superlattice material.

The 1T/1H Nb _0.9 V _0.1 Se ₂ superlattice material obtained in Example 1 was jointly tested and characterized:

① Energy dispersive X-ray spectroscopy (EDS) was used to analyze the elemental composition and stoichiometric ratio of the material obtained in Example 1, as shown in Figure 2. In order to ensure the uniformity of the distribution of the doping elements in the obtained material and the accuracy of the stoichiometric ratio, EDS spectra of 10 different regions were collected for comparison, and it was confirmed that the stoichiometric ratio of the obtained material was Nb:V:Se=0.9:0.1:2.

Analysis of the energy dispersive X-ray spectrum can determine the doping elements and concentrations of the doping elements in the 1T/1H superlattice material, which will affect the electronic or superconducting dimensions and can be used for performance regulation of future tunable superconducting dimension devices and tunable Ising superconducting devices.

② Using a low-temperature scanning tunneling microscope (STM) at liquid nitrogen temperature to observe the surface charge density wave of the material obtained in Example 1, as shown in Figure 3, the 1T layer exhibits a periodic charge density wave - the Star of David pattern. The Star of David cluster is composed of 13 Nb atoms, and the 12 Nb4d orbitals on the periphery form 6 full bands. The central Nb 4d orbital can provide a local magnetic moment in the system. There is no obvious charge density wave in the 1H layer.

Scanning tunneling microscopy can be used to characterize the performance of future heavy-fermion superconducting devices. The satellite of David pattern observed in the 1T layer indicates the presence of localized magnetic moments in the material. Scanning tunneling spectroscopy (STS) can be used to characterize the metallicity and superconducting properties of the 1H layer, which can prove the presence of itinerant electrons in the material. In theory, coupling the 1T layer containing localized magnetic moments with the 1H layer of itinerant electrons will hopefully construct a heavy-fermion superconducting device, whose performance is mainly reflected in the strength of the Kondo interaction, and the Kondo resonance peak can be detected using STS technology.

③ The phonon vibration modes of the material obtained in Example 1 were analyzed by Raman spectrometer. As shown in FIG4 , the laser wavelength was 532 nm. The material had phonon vibration modes E _2g and A _1g in the wave number range of 100 to 400 cm ^-1 , wherein the E _2g mode was related to the vibration of the in-plane phonons, and the A _1g mode was related to the vibration of the out-of-plane phonons. Compared with the undoped NbSe ₂ matrix, the V-doped superlattice showed obvious changes in the phonon vibration modes, mainly the blue shift of the E _2g mode and the red shift of the A _1g mode. This frequency shift reflects that the 1T/1H superlattice Nb _0.9 V _0.1 Se ₂ prepared based on V doping has a certain degree of interlayer decoupling, indicating that the electronic dimension of the material is reduced.

The analysis of phonon vibration modes in Raman spectroscopy can be used to reflect the strength of interlayer coupling in 1T and 1H stacking superlattices, and thus reflect the changing trend of the electronic dimension of the material. It can be used as a characterization method for the electronic dimension of future adjustable superconducting dimensional devices and adjustable Ising superconducting devices.

④ The electronic structure of the material obtained in Example 1 was characterized by angle-resolved photoelectron spectroscopy (ARPES), and Figure 5 is an energy band diagram along the Γ-M high symmetry direction at different photon energies, and the test temperature is 8 K. As shown in Figure 5, the energy band structure is basically the same at different photon energies, indicating that the obtained material has quasi-two-dimensional properties.

Angular-resolved photoelectron spectroscopy can be used to characterize the electronic dimensionality of future tunable superconducting dimensionality devices and tunable Ising superconducting devices.

Example 2

Preparation of 1T/1H Nb _0.95 Ti _0.05 Se ₂ superlattice: Niobium diselenide (NbSe ₂ ) is used as a matrix and titanium (Ti) element is doped with a concentration of 1.67%.

1) 0.53 g of niobium (Nb) powder, 0.014 g of titanium (Ti) powder and 0.95 g of selenium (Se) powder were mixed according to the stoichiometric ratio of Nb:Ti:Se=0.95:0.05:2;

2) placing the mixed raw materials in a muffle furnace and maintaining it at 850° C. for 4 days to form a uniformly mixed polycrystalline powder;

3) transferring the polycrystalline powder to a dual-temperature zone tubular furnace, using iodine (I ₂ ) as a transport agent, setting the reaction zone temperature to 900° C., the growth zone temperature to 800° C., and the growth cycle to 10 days;

4) The grown sample is quickly placed in a pre-prepared ice-water mixture for quenching treatment to stabilize the superlattice structure and improve its crystal quality, thereby obtaining a 1T/1H Nb _0.95 Ti _0.05 Se ₂ superlattice material.

Example 3

Preparation of 1T/1H NbSe _1.11 Te _0.89 superlattice: Niobium diselenide (NbSe ₂ ) is used as a matrix and doped with tellurium (Te) element with a concentration of 29.67%.

1) 0.47 g of niobium (Nb) powder, 0.45 g of selenium (Se) powder and 0.58 g of tellurium (Te) powder were mixed according to the stoichiometric ratio of Nb:Se:Te=1:1.11:0.89;

2) placing the mixed raw materials in a muffle furnace and maintaining it at 750° C. for 4 days to form a uniformly mixed polycrystalline powder;

3) transferring the polycrystalline powder to a dual-temperature zone tubular furnace, using iodine (I ₂ ) as a transport agent, setting the reaction zone temperature to 850° C., the growth zone temperature to 800° C., and the growth cycle to 7 days;

4) The grown sample is quickly placed in a pre-prepared ice-water mixture for quenching treatment to stabilize the superlattice structure and improve its crystal quality, thereby obtaining a 1T/1H NbSe _1.11 Te _0.89 superlattice material.

The lattice structure of the materials obtained in the above-mentioned Examples 1-3 was characterized by high-angle annular dark field scanning transmission (HAADF-STEM) atomic imaging technology. As shown in FIG6 , the three materials obtained are all structures of alternating stacking of 1T layers and 1H layers, which are 1T/1H stacking superlattices, 1T layers are octahedral coordination structures, and 1H layers are triangular prism coordination structures. Among them, the adjacent 1T layers (or 1H layers) in the Nb _0.9 V _0.1 Se ₂ superlattice and the Nb _0.95 Ti _0.05 Se ₂ superlattice are obtained by C2 rotational symmetry operation, stacked in the ABAB sequence, and conform to the 4H _b superlattice model in the 1T/1H stacking superlattice. The adjacent 1T layers (or 1H layers) in the NbSe _1.11 Te _0.89 superlattice are obtained by slip operation, stacked in the ABCABC sequence, and conform to the 6R superlattice model in the 1T/1H stacking superlattice.

The structural characterization of the obtained 1T/1H superlattice material using HAADF-STEM can be used for the construction and performance interpretation of future adjustable superconducting dimensional devices, adjustable Ising superconducting devices and heavy fermion superconducting devices. The 1T layer in the 1T/1H superlattice can be used as a Mott insulating shielding layer. The strength of the insulation affects the degree of decoupling between superlattice layers, and then affects the electronic or superconducting dimensions. It can be used to prepare adjustable superconducting dimensional devices and adjustable Ising superconducting devices. In some cases, the 1T layer in the 1T/1H superlattice can provide local magnetic moments, and the 1H layer provides itinerant electrons. The coupling of local magnetic moments and itinerant electrons will hopefully construct heavy fermion superconducting devices. This will be discussed below in conjunction with specific embodiments.

Device Example 1

The 1T/1H stacked superlattice Nb _0.95 Ti _0.05 Se ₂ obtained in Example 2 was prepared into a superconducting device, and its low-temperature physical properties were measured using the Triton dilution refrigerator of Oxford Instruments. The system can provide a maximum magnetic field of 14T, and the minimum temperature of the sample can reach 30mK. As shown in Figure 7(a), the prepared superconducting device enters the superconducting transition range at 3.3K, and the resistance drops to zero at 2.9K, where the superconducting transition temperature is 3.09K (the temperature corresponding to half the normal resistance value). As shown in Figure 7(b), the stable temperature is 0.2K, and the horizontal critical magnetic field of the prepared superconducting device is 6.71T (the magnetic field corresponding to half the normal resistance value).

Device Example 2

The 1T/1H stacked superlattice Nb _0.95 Ti _0.05 Se ₂ and NbSe _1.11 Te _0.89 obtained in Example 2 and Example 3 were prepared into superconducting devices, as shown in Figure 8. The superconducting dimension of the superlattice device can be regulated by changing the doping element and the concentration of the doping element. The superconducting dimension is described by the ratio of the horizontal critical field to the Pauli paramagnetic limit (H _c2 /H _P ): H _c2 /H _P >> 1, indicating two-dimensional superconductivity, H _c2 /H _P <1, indicating three-dimensional superconductivity. When the doping element is Ti, H _c2 /H _P ≈1.2, a two-dimensional superconducting device is obtained; when the doping element is changed to Te, H _c2 /H _P <1, a three-dimensional superconducting device is obtained. When the doping element is fixed to Te, the doping concentration is changed to 29.67% and 21.33% respectively, and there is a significant difference in the H _c2 /H _P value, indicating that the dimension of the superconducting device is regulated.

Therefore, the present invention provides a method and application of obtaining stacked superlattices based on doping with transition metal elements or chalcogen elements, grows 1T and 1H stacked superlattices, and constructs a set of regulatory engineering in the application field of functional devices by changing the doping elements and the concentration of the doping elements, thereby achieving wide applications in the fields of adjustable superconducting dimensional devices, adjustable Ising superconducting devices, heavy fermion superconducting devices, etc. These applications demonstrate the potential of 1T and 1H stacked superlattices in realizing new quantum phenomena and functional devices, and provide a new direction for future scientific and technological development.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solution of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solution to deviate from the spirit and scope of the technical solution of the present invention.

Claims (10)

1. A method for obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements, characterized in that: Using transition metal dichalcogenides as the matrix, doping with transition metal elements or chalcogen elements, and adjusting the stoichiometric ratio of the doping elements, the formation energy or thermal stability of the 1T structure and the 1H structure is balanced, thereby achieving the self-assembly synthesis of 1T and 1H stacking superlattices. 2. A method for obtaining a stacked superlattice based on doping with transition metal elements or chalcogen elements according to claim 1, characterized in that: the transition metal element is one or more of vanadium, niobium, tantalum, titanium, molybdenum, and tungsten; the chalcogen element is one or more of sulfur, selenium, and tellurium. 3. A 1T and 1H stacking superlattice, characterized in that the 1T and 1H stacking superlattice is prepared by the preparation method described in any one of claims 1-2 above. 4. A 1T and 1H stacked superlattice according to claim 3, characterized in that the 1T and 1H stacked superlattice comprises a 1T/1H stacked superlattice, a 1T/1T/1H stacked superlattice and a 1T/1H/1H stacked superlattice. 5. A 1T and 1H stacking superlattice according to claim 4, characterized in that the specific preparation steps of the 1T and 1H stacking superlattice are: S1. Weigh a doping element raw material and a transition metal dichalcogenide compound matrix raw material, wherein the doping element is a transition metal element or a chalcogen element, and the total stoichiometric ratio of the transition metal element to the chalcogen element is 1:2; S2, mixing and grinding the raw materials weighed in S1, and then placing them in a muffle furnace at a temperature of 700 to 900° C. for 3 to 6 days to obtain a uniformly mixed polycrystalline powder; S3, placing the obtained polycrystalline powder in a dual-temperature zone tube furnace and growing it for 7 to 10 days using a chemical vapor transport method; S4. Quench in an ice-water mixture to obtain 1T and 1H stacking superlattices. 6. A 1T and 1H stacked superlattice according to claim 5, characterized in that the joint characterization method of the 1T and 1H stacked superlattice is: joint characterization of scanning transmission electron microscopy, energy dispersive X-ray spectrometer, Raman spectrometer, scanning tunneling microscope, angle-resolved photoelectron spectrometer and dilution refrigerator. 7. A 1T and 1H stacked superlattice according to claim 5, characterized in that: the 1T and 1H stacked superlattice described in any one of claims 3 to 5 is applied to functional devices, and different functions are achieved by regulating the doping elements and the concentration of the doping elements, and the functional devices include adjustable superconducting dimensional devices, adjustable Ising superconducting devices and heavy fermion superconducting devices. 8. The application of a 1T and 1H stacked superlattice according to claim 7 is characterized in that: the adjustable superconducting dimension device is achieved by adjusting the interlayer coupling strength by changing the doping elements and the concentration of the doping elements to control the superconducting dimension of the superlattice device. 9. The application of a 1T and 1H stacked superlattice according to claim 7 is characterized in that: the adjustable Ising superconducting device achieves regulation of Ising superconductivity by changing the doping elements and the concentration of the doping elements to adjust the interlayer coupling strength and the insulation of the 1T layer. 10. The use of a 1T and 1H stacked superlattice according to claim 7, characterized in that: the heavy fermion superconducting device is an artificial heavy fermion device in a 1T/1H superlattice obtained by changing the doping elements and the concentration of the doping elements to construct a 1T layer containing localized magnetic moments and a 1H layer of itinerant electrons.